JP2020074272A - Plasma processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an advantageous technique for stabilizing a plasma potential in long-term use.
A plasma processing apparatus includes a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal and a second balanced terminal, a grounded vacuum container, and an electrically connected first balanced terminal. Affects the relationship between the first electrode connected, the second electrode electrically connected to the second balanced terminal, and the first voltage applied to the first electrode and the second voltage applied to the second electrode. Adjusting reactance for giving a high frequency, a high frequency power source for generating a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal, a substrate holding unit for holding the substrate, and a drive mechanism for rotating the substrate holding unit. , And the high frequency power supply can change the frequency of the high frequency, and the relationship is adjusted by changing the frequency.
[Selection diagram] Fig. 17

Description

  The present invention relates to a plasma processing device.

  There is a plasma processing apparatus that generates a plasma by applying a high frequency between two electrodes and processes a substrate with the plasma. Such a plasma processing apparatus may operate as a sputtering apparatus or an etching apparatus depending on the area ratio of two electrodes and / or the bias. A plasma processing apparatus configured as a sputtering apparatus has a first electrode that holds a target and a second electrode that holds a substrate, and a high frequency is applied between the first electrode and the second electrode. Plasma is generated between the electrode and the second electrode (between the target and the substrate). The plasma generation creates a self-bias voltage on the surface of the target, which causes the ions to strike the target and eject the particles of the material that make it up.

  Patent Document 1 describes a sputtering apparatus having a grounded chamber, a target electrode connected to an RF generation source via an impedance matching network, and a substrate holding electrode grounded via a substrate electrode tuning circuit. Has been done.

  In the sputtering apparatus described in Patent Document 1, the chamber may function as an anode in addition to the substrate holding electrode. The self-bias voltage may depend on the state of the part that can function as the cathode and the state of the part that can function as the anode. Therefore, when the chamber functions as the anode in addition to the substrate holding electrode, the cell bias voltage may change depending on the state of the portion of the chamber functioning as the anode. Changes in the self-bias voltage cause changes in the plasma potential, and changes in the plasma potential can affect the characteristics of the film formed.

  When the film is formed on the substrate by the sputtering apparatus, the film may be formed on the inner surface of the chamber. This can change the state of the portion of the chamber that can function as the anode. Therefore, if the sputtering apparatus is continuously used, the self-bias voltage may change due to the film formed on the inner surface of the chamber, and the plasma potential may also change. Therefore, conventionally, it has been difficult to maintain constant characteristics of the film formed on the substrate when the sputtering apparatus is used for a long period of time.

  Similarly, even when the etching apparatus is used for a long period of time, the self-bias voltage may be changed by the film formed on the inner surface of the chamber, which may change the plasma potential, so that the etching characteristics of the substrate may be kept constant. It was difficult.

Japanese Patent Publication No. 55-35465

The present invention has been made based on the above recognition of the problem, and provides an advantageous technique for stabilizing the plasma potential in long-term use.
A first aspect of the present invention relates to a plasma processing apparatus, which is grounded to a balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal and a second balanced terminal. A vacuum container, a first electrode electrically connected to the first balanced terminal, a second electrode electrically connected to the second balanced terminal, and a first voltage applied to the first electrode. A regulated reactance that influences a relationship with a second voltage applied to the second electrode, and a high frequency power supply that generates a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal, The high frequency power supply is capable of changing the frequency of the high frequency, and the relationship is adjusted by changing the frequency.

  A second aspect of the present invention relates to a plasma processing method, which includes a balun having one unbalanced terminal, a second unbalanced terminal, a first balanced terminal, and a second balanced terminal, and a grounded vacuum. A container; a first electrode electrically connected to the first balanced terminal; a second electrode electrically connected to the second balanced terminal; a first voltage applied to the first electrode; A regulated reactance that affects the relationship with the second voltage applied to the second electrode, a high frequency power supply that generates a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal, and a substrate A plasma processing method for processing a substrate in a plasma processing apparatus comprising: a substrate holding unit for holding a substrate; and a drive mechanism for rotating the substrate holding unit, wherein the high-frequency power supply is generated so that the relationship is adjusted. Frequency adjustment If, after the step, and a step of processing while rotating the substrate by the drive mechanism.

The figure which shows typically the structure of the plasma processing apparatus 1 of 1st Embodiment of this invention. The figure which shows the structural example of a balun. The figure which shows the other structural example of a balun. The figure explaining the function of the balun 103. The figure which illustrates the relationship of electric current I1 (= I2), I2 ', I3, ISO, and (= X / Rp). The figure which shows the result of having simulated the plasma potential and cathode potential in the case of satisfy | filling 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma potential and cathode potential in the case of satisfy | filling 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma potential and cathode potential in the case of satisfy | filling 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma potential and cathode potential in the case of satisfy | filling 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma electric potential and the cathode electric potential when not satisfy | filling 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma electric potential and the cathode electric potential when not satisfy | filling 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma electric potential and the cathode electric potential when not satisfy | filling 1.5 <= X / Rp <5000. The figure which shows the result of having simulated the plasma electric potential and the cathode electric potential when not satisfy | filling 1.5 <= X / Rp <5000. The figure which illustrates the confirmation method of Rp-jXp. The figure which shows typically the structure of the plasma processing apparatus 1 of 2nd Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 3rd Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 4th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 5th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 6th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 7th Embodiment of this invention. The figure explaining the function of the balun of 7th Embodiment of this invention. The figure which shows the result of simulating the plasma potential and two cathode potentials in the case of satisfy | filling 1.5 <= X / Rp <5000. The figure which shows the result of simulating the plasma potential and two cathode potentials in the case of satisfy | filling 1.5 <= X / Rp <5000. The figure which shows the result of simulating the plasma potential and two cathode potentials in the case of satisfy | filling 1.5 <= X / Rp <5000. The figure which shows the result of simulating the plasma potential and two cathode potentials in the case of satisfy | filling 1.5 <= X / Rp <5000. The figure which shows the result of simulating the plasma potential and two cathode potentials in the case where 1.5 ≦ X / Rp ≦ 5000 is not satisfied. The figure which shows the result of simulating the plasma potential and two cathode potentials in the case where 1.5 ≦ X / Rp ≦ 5000 is not satisfied. The figure which shows the result of simulating the plasma potential and two cathode potentials in the case where 1.5 ≦ X / Rp ≦ 5000 is not satisfied. The figure which shows the result of simulating the plasma potential and two cathode potentials in the case where 1.5 ≦ X / Rp ≦ 5000 is not satisfied. The figure which shows typically the structure of the plasma processing apparatus 1 of 8th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 10th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 11th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 12th Embodiment of this invention. The figure which shows the normalized thickness distribution of the film | membrane formed in the board | substrate in the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which illustrates the change of the voltage (1st voltage) of a 1st electrode, and the voltage (2nd voltage) of a 2nd electrode when changing the frequency of a high frequency in the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 13th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 14th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 15th Embodiment of this invention. The figure which shows typically the structure of the plasma processing apparatus 1 of 16th Embodiment of this invention. The figure which illustrates the thickness distribution of the film formed in the board | substrate when TS distance is 120 mm in the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which illustrates the thickness distribution of the film formed in the board | substrate when TS distance is 105 mm in the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which illustrates the thickness distribution of the film | membrane formed in the board | substrate when TS distance is 100 mm in the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which illustrates the thickness distribution of the film | membrane formed in the board | substrate when the frequency of a high frequency is set to 12.56 MHz in the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which illustrates the thickness distribution of the film | membrane formed in the board | substrate when the frequency of a high frequency is set to 13.06 MHz in the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which illustrates the thickness distribution of the film | membrane formed in the board | substrate when the frequency of a high frequency is set to 13.56 MHz in the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which illustrates the thickness distribution of the film | membrane formed in the board | substrate when the frequency of a high frequency is set to 14.06 MHz in the plasma processing apparatus 1 of 9th Embodiment of this invention. The figure which illustrates the thickness distribution of the film | membrane formed in the board | substrate when the frequency of a high frequency is set to 14.56 MHz in the plasma processing apparatus 1 of 9th Embodiment of this invention.

  Hereinafter, the present invention will be described through exemplary embodiments thereof with reference to the accompanying drawings.

  FIG. 1 schematically shows the configuration of a plasma processing apparatus 1 according to the first embodiment of the present invention. The plasma processing apparatus of the first embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. The plasma processing apparatus 1 includes a balun (balance / unbalance conversion circuit) 103, a vacuum container 110, a first electrode 106, and a second electrode 111. Alternatively, the plasma processing apparatus 1 may be understood to include the balun 103 and the main body 10, and the main body 10 includes the vacuum container 110, the first electrode 106, and the second electrode 111. The main body 10 has a first terminal 251 and a second terminal 252. The first electrode 106 may be arranged so as to cooperate with the vacuum container 110 to separate the vacuum space and the external space (that is, to form a part of the vacuum partition wall), or the first electrode 106 of the vacuum container 110. It may be placed inside. The second electrode 111 may be arranged so as to cooperate with the vacuum container 110 to separate the vacuum space and the external space (that is, to form a part of the vacuum partition wall), or the second electrode 111 of the vacuum container 110. It may be placed inside.

  The balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211, and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103, and a balanced circuit is connected to the first balanced terminal 211 and the second balanced terminal 212 of the balun 103. Connected. The vacuum container 110 is made of a conductor and is grounded.

  In the first embodiment, the first electrode 106 is a cathode and holds the target 109. The target 109 can be, for example, an insulator material or a conductor material. In addition, in the first embodiment, the second electrode 111 is an anode and holds the substrate 112. The plasma processing apparatus 1 of the first embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering the target 109. The first electrode 106 is electrically connected to the first balanced terminal 211, and the second electrode 111 is electrically connected to the second balanced terminal 212. The fact that the first electrode 106 and the first balanced terminal 211 are electrically connected means that the first electrode 106 and the first balanced terminal 211 are connected so that a current flows between the first electrode 106 and the first balanced terminal 211. This means that a current path is formed between the current path and the point 211. Similarly, in this specification, “a and b are electrically connected” means that a current path is formed between a and b so that a current flows between a and b. means.

  In the above structure, the first electrode 106 is electrically connected to the first terminal 251, the second electrode 111 is electrically connected to the second terminal 252, and the first terminal 251 is electrically connected to the first balanced terminal 211. And the second terminal 252 is electrically connected to the second balanced terminal 212.

  In the first embodiment, the first electrode 106 and the first balanced terminal 211 (first terminal 251) are electrically connected via the blocking capacitor 104. The blocking capacitor 104 blocks a direct current between the first balanced terminal 211 and the first electrode 106 (or between the first balanced terminal 211 and the second balanced terminal 212). Instead of providing the blocking capacitor 104, an impedance matching circuit 102, which will be described later, may be configured to block a direct current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202. The first electrode 106 may be supported by the vacuum container 110 via the insulator 107. The second electrode 111 may be supported by the vacuum container 110 via the insulator 108. Alternatively, the insulator 108 may be disposed between the second electrode 111 and the vacuum container 110.

  The plasma processing apparatus 1 may further include a high frequency power supply 101, and an impedance matching circuit 102 arranged between the high frequency power supply 101 and the balun 103. The high frequency power supply 101 supplies a high frequency (high frequency current, high frequency voltage, high frequency power) between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the balun 103 via the impedance matching circuit 102. In other words, the high frequency power supply 101 supplies a high frequency (high frequency current, high frequency voltage, high frequency power) between the first electrode 106 and the second electrode 111 via the impedance matching circuit 102, the balun 103 and the blocking capacitor 104. .. Alternatively, the high frequency power supply 101 can also be understood as a high frequency power supply between the first terminal 251 and the second terminal 252 of the main body 10 via the impedance matching circuit 102 and the balun 103.

  Gas (for example, Ar, Kr, or Xe gas) is supplied to the internal space of the vacuum container 110 through a gas supply unit (not shown) provided in the vacuum container 110. Further, a high frequency is supplied between the first electrode 106 and the second electrode 111 by the high frequency power supply 101 via the impedance matching circuit 102, the balun 103 and the blocking capacitor 104. As a result, plasma is generated between the first electrode 106 and the second electrode 111, a self-bias voltage is generated on the surface of the target 109, ions in the plasma collide with the surface of the target 109, and the ions from the target 109 are deviated. Particles of the material making up are released. Then, the particles form a film on the substrate 112.

  FIG. 2A shows a configuration example of the balun 103. The balun 103 shown in FIG. 2A includes a first coil 221 that connects the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 221 that connects the second unbalanced terminal 202 and the second balanced terminal 212. And a coil 222. The first coil 221 and the second coil 222 are coils having the same number of turns and share the iron core.

  FIG. 2B shows another configuration example of the balun 103. The balun 103 shown in FIG. 2B includes a first coil 221 connecting the first unbalanced terminal 201 and the first balanced terminal 211, and a second coil 221 connecting the second unbalanced terminal 202 and the second balanced terminal 212. And a coil 222. The first coil 221 and the second coil 222 are coils having the same number of turns and share the iron core. Further, the balun 103 shown in FIG. 2B further includes a third coil 223 and a fourth coil 224 connected between the first balanced terminal 211 and the second balanced terminal 212, and the third coil 223 and the fourth coil 223 are connected to each other. The 4-coil 224 is configured so that the voltage of the connection node 213 between the third coil 223 and the fourth coil 224 is set to the midpoint between the voltage of the first balanced terminal 211 and the voltage of the second balanced terminal 212. The third coil 223 and the fourth coil 224 are coils having the same number of turns and share the iron core. The connection node 213 may be grounded, may be connected to the vacuum container 110, or may be floating.

  The function of the balun 103 will be described with reference to FIG. It is assumed that the current flowing through the first unbalanced terminal 201 is I1, the current flowing through the first balanced terminal 211 is I2, the current flowing through the second unbalanced terminal 202 is I2 ', and the current flowing out of the current I2 to ground is I3. When I3 = 0, that is, when no current flows to the ground on the side of the balance circuit, the isolation performance of the balance circuit with respect to the ground is the best. When I3 = I2, that is, when all of the current I2 flowing through the first balanced terminal 211 flows with respect to the ground, the isolation performance of the balanced circuit with respect to the ground is the worst. The index ISO indicating the degree of such isolation performance can be given by the following formula. Under this definition, the larger the absolute value of ISO, the better the isolation performance.

ISO [dB] = 20 log (I3 / I2 ')
In FIG. 3, Rp-jXp is the side of the first electrode 106 and the second electrode 111 (from the side of the first balanced terminal 211 and the second balanced terminal 212 in the state where plasma is generated in the internal space of the vacuum container 110). The impedance (including the reactance of the blocking capacitor 104) when looking at the main body 10 side is shown. Rp represents a resistance component and -Xp represents a reactance component. Further, in FIG. 3, X indicates the reactance component (inductance component) of the impedance of the first coil 221 of the balun 103. ISO has a correlation to X / Rp.

  FIG. 4 illustrates the relationship among the currents I1 (= I2), I2 ', I3, ISO, and α (= X / Rp). The present inventor has a configuration in which a high frequency is supplied from the high frequency power supply 101 to the first electrode 106 and the second electrode 111 via the balun 103, and particularly, in the configuration, 1.5 ≦ X / Rp ≦ 5000 is satisfied. However, in order to make the electric potential of the plasma (plasma electric potential) formed in the internal space of the vacuum container 110 (the space between the first electrode 106 and the second electrode 111) insensitive to the state of the inner surface of the vacuum container 110. It has been found to be advantageous to. Here, the fact that the plasma potential is insensitive to the state of the inner surface of the vacuum container 110 means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5 ≦ X / Rp ≦ 5000 corresponds to −10.0 dB ≧ ISO ≧ −80 dB.

  5A to 5D show the results of simulating the plasma potential and the potential (cathode potential) of the first electrode 106 when 1.5 ≦ X / Rp ≦ 5000 is satisfied. FIG. 5A shows the plasma potential and the cathode potential in the state where the film is not formed on the inner surface of the vacuum container 110. FIG. 5B shows the plasma potential and the cathode potential in the state where the resistive film (1000Ω) is formed on the inner surface of the vacuum container 110. FIG. 5C shows the plasma potential and the cathode potential in the state where the inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. FIG. 5D shows the plasma potential and the cathode potential when the capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. From FIGS. 5A to 5D, it is understood that satisfying 1.5 ≦ X / Rp ≦ 5000 is advantageous for stabilizing the plasma potential of the inner surface of the vacuum container 110 in various states.

  FIG. 6A to FIG. 6D show the results of simulating the plasma potential and the potential (cathode potential) of the first electrode 106 when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. .. FIG. 6A shows the plasma potential and the cathode potential in the state where the film is not formed on the inner surface of the vacuum container 110. FIG. 6B shows the plasma potential and the cathode potential when the resistive film (1000Ω) is formed on the inner surface of the vacuum container 110. FIG. 6C shows the plasma potential and the cathode potential when the inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. FIG. 6D shows the plasma potential and the cathode potential in the state where the capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. From FIGS. 6A to 6D, it is understood that the plasma potential may change depending on the state of the inner surface of the vacuum container 110 when 1.5 ≦ X / Rp ≦ 5000 is not satisfied. ..

  Here, X / Rp> 5000 (for example, X / Rp = ∞) and X / Rp <1.5 (for example, X / Rp = 1.0, X / Rp = 0.5) In both cases, the plasma potential is likely to change depending on the state of the inner surface of the vacuum container 110. When X / Rp> 5000, electric discharge occurs only between the first electrode 106 and the second electrode 111 in the state where the film is not formed on the inner surface of the vacuum container 110. However, in the case of X / Rp> 5000, when a film starts to be formed on the inner surface of the vacuum container 110, the plasma potential reacts sensitively thereto, which is illustrated in FIGS. 6A to 6D. The result is as follows. On the other hand, in the case of X / Rp <1.5, the current flowing into the ground through the vacuum container 110 is large, so that the influence of the state of the inner surface of the vacuum container 110 (electrical characteristics of the film formed on the inner surface) is affected. Becomes remarkable, and the plasma potential changes depending on the film formation. Therefore, as described above, it is advantageous to configure the plasma processing apparatus 1 so as to satisfy 1.5 ≦ X / Rp ≦ 5000.

  An example of a method of determining Rp-jXp (only Rp is the one that one actually wants to know) will be described with reference to FIG. 7. First, the balun 103 is removed from the plasma processing apparatus 1, and the output terminal 230 of the impedance matching circuit 102 is connected to the first terminal 251 (blocking capacitor 104) of the main body 10. In addition, the second terminal 252 (second electrode 111) of the main body 10 is grounded. In this state, high frequency power is supplied from the high frequency power supply 101 to the first terminal 251 of the main body 10 through the impedance matching circuit 102. In the example shown in FIG. 7, the impedance matching circuit 102 is equivalently composed of coils L1 and L2 and variable capacitors VC1 and VC2. Plasma can be generated by adjusting the capacitance values of the variable capacitors VC1 and VC2. When the plasma is stable, the impedance of the impedance matching circuit 102 matches the impedance Rp-jXp of the body 10 side (the first electrode 106 and the second electrode 111 side) when the plasma is generated. .. The impedance of the impedance matching circuit 102 at this time is Rp + jXp.

  Therefore, based on the impedance Rp + jXp of the impedance matching circuit 102 when the impedances match, Rp−jXp (only Rp is the one that one actually wants to know) can be obtained. Besides, Rp-jXp can be obtained by simulation based on design data, for example.

  X / Rp can be specified based on the Rp thus obtained. For example, the reactance component (inductance component) X of the impedance of the first coil 221 of the balun 103 can be determined based on Rp so as to satisfy 1.5 ≦ X / Rp ≦ 5000.

  FIG. 8 schematically shows the configuration of the plasma processing apparatus 1 according to the second embodiment of the present invention. The plasma processing apparatus 1 of the second embodiment can operate as an etching apparatus that etches the substrate 112. In the second embodiment, the first electrode 106 is a cathode and holds the substrate 112. In addition, in the second embodiment, the second electrode 111 is an anode. In the plasma processing apparatus 1 of the second embodiment, the first electrode 106 and the first balanced terminal 211 are electrically connected via the blocking capacitor 104. In other words, in the plasma processing apparatus 1 of the second embodiment, the blocking capacitor 104 is arranged in the electrical connection path between the first electrode 106 and the first balanced terminal 211.

  FIG. 9 schematically shows the configuration of the plasma processing apparatus 1 according to the third embodiment of the present invention. The plasma processing apparatus 1 of the third embodiment is a modification of the plasma processing apparatus 1 of the first embodiment, and further includes at least one of a mechanism for moving the second electrode 111 up and down and a mechanism for rotating the second electrode 111. In the example shown in FIG. 9, the plasma processing apparatus 1 includes a drive mechanism 114 including both a mechanism for moving the second electrode 111 up and down and a mechanism for rotating the second electrode 111. A bellows 113 forming a vacuum partition may be provided between the vacuum container 110 and the driving mechanism 114.

  Similarly, the plasma processing apparatus 1 of the second embodiment may further include at least one of a mechanism for moving the first electrode 106 up and down and a mechanism for rotating the second electrode 106.

  FIG. 10 schematically shows the configuration of the plasma processing apparatus 1 according to the fourth embodiment of the present invention. The plasma processing apparatus of the fourth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. Matters not mentioned as the plasma processing apparatus 1 of the fourth embodiment can be according to the first to third embodiments. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum container 110, a first electrode 106 and a second electrode 135 forming a first set, and a first electrode 141 forming a second set. And a second electrode 145. Alternatively, the plasma processing apparatus 1 includes a first balun 103, a second balun 303, and a main body 10, and the main body 10 includes a vacuum container 110 and a first electrode 106 and a second electrode 135 that form a first set. And a first electrode 141 and a second electrode 145 forming a second set. The main body 10 has a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

  The first balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211 and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 side of the first balun 103, and the first balanced terminal 211 and the second balanced terminal 212 side of the first balun 103 are connected to each other. , A balanced circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 has a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411 and a second balanced terminal 412. An unbalanced circuit is connected to the sides of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and a side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 is connected. , A balanced circuit is connected. The vacuum container 110 is grounded.

  The first electrode 106 of the first set holds the target 109. The target 109 can be, for example, an insulator material or a conductor material. The first set of second electrodes 135 is arranged around the first electrode 106. The first electrode 106 of the first set is electrically connected to the first balanced terminal 211 of the first balun 103, and the second electrode 135 of the first set is electrically connected to the second balanced terminal 212 of the first balun 103. It is connected to the. The first electrode 141 of the second set holds the substrate 112. The second set of second electrodes 145 is arranged around the first electrode 141. The first electrode 141 of the second set is electrically connected to the first balanced terminal 411 of the second balun 303, and the second electrode 145 of the second set is electrically connected to the second balanced terminal 412 of the second balun 303. It is connected to the.

  In the above configuration, the first electrode 106 of the first set is electrically connected to the first terminal 251, the second electrode 135 of the first set is electrically connected to the second terminal 252, and the first terminal 251 is It can be understood as a configuration in which the first balanced terminal 211 of the first balun 103 is electrically connected and the second terminal 252 is electrically connected to the second balanced terminal 212 of the first balun 103. In addition, in the above configuration, the first electrode 141 of the second set is electrically connected to the third terminal 451, the second electrode 145 of the second set is electrically connected to the fourth terminal 452, and the third terminal It can be understood that 451 is electrically connected to the first balanced terminal 411 of the second balun 303, and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

  The first electrode 106 of the first set and the first balanced terminal 211 (first terminal 251) of the first balun 103 may be electrically connected via the blocking capacitor 104. The blocking capacitor 104 is provided between the first balanced terminal 211 of the first balun 103 and the first electrode 106 of the first set (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). Cut off the DC current. Instead of providing the blocking capacitor 104, the first impedance matching circuit 102 may be configured to cut off the direct current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103. Good. The first electrode 106 and the second electrode 135 of the first set may be supported by the vacuum container 110 via the insulator 132.

  The first electrode 141 of the second set and the first balanced terminal 411 (third terminal 451) of the second balun 303 may be electrically connected via the blocking capacitor 304. The blocking capacitor 304 is provided between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second set (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off the DC current. Instead of providing the blocking capacitor 304, the second impedance matching circuit 302 may be configured to cut off a direct current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. Good. The first electrode 141 and the second electrode 145 of the second set may be supported by the vacuum container 110 via the insulator 142.

  The plasma processing apparatus 1 may include a first high frequency power supply 101 and a first impedance matching circuit 102 arranged between the first high frequency power supply 101 and the first balun 103. The first high frequency power supply 101 supplies a high frequency between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the first balun 103 via the first impedance matching circuit 102. In other words, the first high frequency power supply 101 supplies a high frequency between the first electrode 106 and the second electrode 135 via the first impedance matching circuit 102, the first balun 103 and the blocking capacitor 104. Alternatively, the first high frequency power supply 101 supplies a high frequency between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first set of the first electrode 106 and the second electrode 135 form a first high frequency supply unit that supplies a high frequency to the internal space of the vacuum container 110.

  The plasma processing apparatus 1 may include a second high frequency power supply 301 and a second impedance matching circuit 302 arranged between the second high frequency power supply 301 and the second balun 303. The second high frequency power supply 301 supplies a high frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. In other words, the second high frequency power supply 301 supplies a high frequency between the first electrode 141 and the second electrode 145 of the second set via the second impedance matching circuit 302, the second balun 303 and the blocking capacitor 304. .. Alternatively, the second high frequency power supply 301 supplies a high frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the second set of the first electrode 141 and the second electrode 145 form a second high frequency supply unit that supplies a high frequency to the internal space of the vacuum container 110.

  In the state where plasma is generated in the internal space of the vacuum container 110 by the supply of the high frequency from the first high frequency power supply 101, the first set of the first balance terminal 211 and the second balance terminal 212 of the first balun 103 are connected to the first set of the first set. The impedance when looking at the side of the 1st electrode 106 and the 2nd electrode 135 (the side of the main body 10) is set to Rp1-jXp1. Further, the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is X1. In this definition, satisfying 1.5 ≦ X1 / Rp1 ≦ 5000 is advantageous for stabilizing the potential of plasma formed in the internal space of the vacuum container 110.

  Further, in the state where plasma is generated in the internal space of the vacuum container 110 by the supply of the high frequency from the second high frequency power supply 301, the second set from the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303. The impedance when the side of the first electrode 141 and the side of the second electrode 145 (the side of the main body 10) is viewed as Rp2-jXp2. Further, the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is X2. In this definition, satisfying 1.5 ≦ X2 / Rp2 ≦ 5000 is advantageous for stabilizing the potential of plasma formed in the internal space of the vacuum container 110.

  FIG. 11 schematically shows the configuration of the plasma processing apparatus 1 according to the fifth embodiment of the present invention. The apparatus 1 of the fifth embodiment has a configuration in which drive mechanisms 114 and 314 are added to the plasma processing apparatus 1 of the fourth embodiment. The drive mechanism 114 can include at least one of a mechanism for moving the first electrode 141 up and down and a mechanism for rotating the first electrode 141. The driving mechanism 314 may include a mechanism for moving the second electrode 145 up and down.

  FIG. 12 schematically shows the configuration of the plasma processing apparatus 1 according to the sixth embodiment of the present invention. The plasma processing apparatus of the sixth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. Matters not mentioned as the sixth embodiment can comply with the first to fifth embodiments. The plasma processing apparatus 1 of the sixth embodiment includes a plurality of first high frequency supply units and at least one second high frequency supply unit. One of the plurality of first high frequency power supply units may include the first electrode 106a, the second electrode 135a, and the first balun 103a. The other one of the plurality of first high frequency supply units may include the first electrode 106b, the second electrode 135b, and the first balun 103b. Here, an example will be described in which the plurality of first high-frequency supply units are composed of two high-frequency supply units. Further, the two high-frequency supply units and the components related thereto are distinguished from each other by subscripts a and b. Similarly, the two targets are also distinguished from each other by the subscripts a and b.

  In another aspect, the plasma processing apparatus 1 includes a plurality of first baluns 103a and 103b, a second balun 303, a vacuum container 110, a first electrode 106a and a second electrode 135a, a first electrode 106b and a second electrode 106b. The electrode 135b and the 1st electrode 141 and the 2nd electrode 145 are provided. Alternatively, the plasma processing apparatus 1 includes a plurality of first baluns 103a and 103b, a second balun 303, and a main body 10, and the main body 10 includes the vacuum container 110, the first electrode 106a, and the second electrode 135a. It may be understood as including the first electrode 106b and the second electrode 135b, and the first electrode 141 and the second electrode 145. The main body 10 has first terminals 251a and 251b, second terminals 252a and 252b, a third terminal 451, and a fourth terminal 452.

  The first balun 103a has a first unbalanced terminal 201a, a second unbalanced terminal 202a, a first balanced terminal 211a, and a second balanced terminal 212a. An unbalanced circuit is connected to the first unbalanced terminal 201a and the second unbalanced terminal 202a of the first balun 103a, and the first balanced terminal 211a and the second balanced terminal 212a of the first balun 103a are connected to each other. , A balanced circuit is connected. The first balun 103b has a first unbalanced terminal 201b, a second unbalanced terminal 202b, a first balanced terminal 211b, and a second balanced terminal 212b. The unbalanced circuit is connected to the first unbalanced terminal 201b and the second unbalanced terminal 202b of the first balun 103b, and the first balanced terminal 211b and the second balanced terminal 212b of the first balun 103b are connected to each other. , A balanced circuit is connected.

  The second balun 303 may have the same configuration as the first balun 103a and 103b. The second balun 303 has a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411 and a second balanced terminal 412. An unbalanced circuit is connected to the sides of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and a side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 is connected. , A balanced circuit is connected. The vacuum container 110 is grounded.

  The first electrodes 106a and 106b hold targets 109a and 109b, respectively. The targets 109a and 109b can be, for example, an insulator material or a conductor material. The second electrodes 135a and 135b are arranged around the first electrodes 106a and 106b, respectively. The first electrodes 106a and 106b are electrically connected to the first balanced terminals 211a and 211b of the first baluns 103a and 103b, respectively, and the second electrodes 135a and 135b are the second balanced terminals of the first baluns 103a and 103b, respectively. It is electrically connected to 212a and 212b.

  The first electrode 141 holds the substrate 112. The second electrode 145 is arranged around the first electrode 141. The first electrode 141 is electrically connected to the first balanced terminal 411 of the second balun 303, and the second electrode 145 is electrically connected to the second balanced terminal 412 of the second balun 303.

  In the above configuration, the first electrodes 106a and 106b are electrically connected to the first terminals 251a and 251b, respectively, and the second electrodes 135a and 135b are electrically connected to the second terminals 252a and 252b, respectively. 251a and 251b are electrically connected to the first balanced terminals 211a and 111b of the first baluns 103a and 103b, respectively, and the second terminals 252a and 252b are electrically connected to the second balanced terminals 212a and 212b of the first baluns 103a and 103b, respectively. Can be understood as an electrically connected configuration. In addition, in the above configuration, the first electrode 141 is electrically connected to the third terminal 451, the second electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is the first terminal of the second balun 303. It can be understood as being electrically connected to the first balanced terminal 411 and the fourth terminal 452 is electrically connected to the second balanced terminal 412 of the second balun 303.

  The first electrodes 106a and 106b and the first balanced terminals 211a and 211b (first terminals 251a and 251b) of the first baluns 103a and 103b may be electrically connected via blocking capacitors 104a and 104b, respectively. The blocking capacitors 104a and 104b are disposed between the first balanced terminals 211a and 211b of the first baluns 103a and 103b and the first electrodes 106a and 106b (or the first balanced terminals 211a and 211b of the first baluns 103a and 103b and the first balanced terminals 211a and 211b and DC current is cut off between the two balanced terminals 212a and 212b). Instead of providing the blocking capacitors 104a and 104b, the first impedance matching circuits 102a and 102b cause direct current to flow between the first unbalanced terminals 201a and 201b and the second unbalanced terminals 202a and 202b of the first baluns 103a and 103b. It may be configured to interrupt the current. Alternatively, the blocking capacitors 104a and 104b may be arranged between the second electrodes 135a and 135b and the second balanced terminals 212a and 212b (second terminals 252a and 252b) of the first baluns 103a and 103b. The first electrode 106a, 106b and the second electrode 135a, 135b may be supported by the vacuum container 110 via insulators 132a, 132b, respectively.

  The first electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 may be electrically connected via the blocking capacitor 304. The blocking capacitor 304 generates a direct current between the first balanced terminal 411 of the second balun 303 and the first electrode 141 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off. Instead of providing the blocking capacitor 304, the second impedance matching circuit 302 may be configured to cut off a direct current flowing between the first unbalanced terminal 201 and the second unbalanced terminal 202 of the second balun 303. Good. Alternatively, the blocking capacitor 304 may be arranged between the second electrode 145 and the second balanced terminal 412 (fourth terminal 452) of the second balun 303. The first electrode 141 and the second electrode 145 may be supported by the vacuum container 110 via the insulator 142.

  The plasma processing apparatus 1 includes a plurality of first high frequency power supplies 101a and 101b, a first impedance matching circuit 102a arranged between the plurality of first high frequency power supplies 101a and 101b and a plurality of first baluns 103a and 103b, respectively. 102b. The first high-frequency power sources 101a and 101b generate high-frequency waves between the first unbalanced terminals 201a and 201b and the second unbalanced terminals 202a and 202b of the first baluns 103a and 103b via the first impedance matching circuits 102a and 102b, respectively. To supply. In other words, the first high-frequency power supplies 101a and 101b have the first impedance matching circuits 102a and 102b, the first baluns 103a and 103b, and the blocking capacitors 104a and 104b, respectively, and the first electrodes 106a and 106b and the second electrode 135a. A high frequency wave is supplied to 135b. Alternatively, the first high frequency power supplies 101a and 101b are connected between the first terminals 251a and 251b and the second terminals 252a and 252b of the main body 10 via the first impedance matching circuits 102a and 102b and the first baluns 103a and 103b. Supply high frequency.

  The plasma processing apparatus 1 may include a second high frequency power supply 301 and a second impedance matching circuit 302 arranged between the second high frequency power supply 301 and the second balun 303. The second high frequency power supply 301 supplies a high frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. In other words, the second high frequency power supply 301 supplies a high frequency between the first electrode 141 and the second electrode 145 via the second impedance matching circuit 302, the second balun 303 and the blocking capacitor 304. Alternatively, the second high frequency power supply 301 supplies a high frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303.

  FIG. 13 schematically shows the configuration of the plasma processing apparatus 1 according to the seventh embodiment of the present invention. The plasma processing apparatus of the seventh embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. Matters not mentioned as the plasma processing apparatus 1 of the seventh embodiment can be according to the first to sixth embodiments. The plasma processing apparatus 1 includes a first balun 103, a second balun 303, a vacuum container 110, a first electrode 105a and a second electrode 105b that form a first set, and a first electrode 141 that forms a second set. And a second electrode 145. Alternatively, the plasma processing apparatus 1 includes a first balun 103, a second balun 303, and a main body 10, and the main body 10 includes a vacuum container 110 and a first electrode 105a and a second electrode 105b that form a first set. And a first electrode 141 and a second electrode 145 forming a second set. The main body 10 has a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

  The first balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211 and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 side of the first balun 103, and the first balanced terminal 211 and the second balanced terminal 212 side of the first balun 103 are connected to each other. , A balanced circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 has a first unbalanced terminal 401, a second unbalanced terminal 402, a first balanced terminal 411 and a second balanced terminal 412. An unbalanced circuit is connected to the sides of the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303, and a side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303 is connected. , A balanced circuit is connected. The vacuum container 110 is grounded.

  The first electrode 105a of the first set holds the first target 109a and faces the space on the substrate 112 side through the first target 109a. The second electrode 105b of the first set is arranged next to the first electrode 105a, holds the second target 109b, and faces the space on the substrate 112 side through the second target 109b. The targets 109a and 109b can be, for example, an insulator material or a conductor material. The first electrode 105a of the first set is electrically connected to the first balanced terminal 211 of the first balun 103, and the second electrode 105b of the first set is electrically connected to the second balanced terminal 212 of the first balun 103. It is connected to the.

  The first electrode 141 of the second set holds the substrate 112. The second set of second electrodes 145 is arranged around the first electrode 141. The first electrode 141 of the second set is electrically connected to the first balanced terminal 411 of the second balun 303, and the second electrode 145 of the second set is electrically connected to the second balanced terminal 412 of the second balun 303. It is connected to the.

  In the above structure, the first electrode 105a of the first set is electrically connected to the first terminal 251, the second electrode 105b of the first set is electrically connected to the second terminal 252, and the first terminal 251 is It can be understood as a configuration in which the first balanced terminal 211 of the first balun 103 is electrically connected and the second terminal 252 is connected to the second balanced terminal 212 of the first balun 103. In addition, in the above configuration, the first electrode 141 of the second set is electrically connected to the third terminal 451, the second electrode 145 of the second set is electrically connected to the fourth terminal 452, and the third terminal It can be understood that 451 is electrically connected to the first balanced terminal 411 of the second balun 303 and the fourth terminal 452 is connected to the second balanced terminal 412 of the second balun 303.

  The first electrode 105a of the first set and the first balanced terminal 211 (first terminal 251) of the first balun 103 may be electrically connected via the blocking capacitor 104a. The blocking capacitor 104a is between the first balanced terminal 211 of the first balun 103 and the first electrode 105a of the first set (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). Cut off the DC current. The second electrode 105b of the first set and the second balanced terminal 212 (second terminal 252) of the first balun 103 may be electrically connected via the blocking capacitor 104b. The blocking capacitor 104b is provided between the second balanced terminal 212 of the first balun 103 and the second electrode 105b of the first set (or between the first balanced terminal 211 and the second balanced terminal 212 of the first balun 103). Cut off the DC current. The first electrode 105a and the second electrode 105b of the first set can be supported by the vacuum container 110 via insulators 132a and 132b, respectively.

  The first electrode 141 of the second set and the first balanced terminal 411 (third terminal 451) of the second balun 303 may be electrically connected via the blocking capacitor 304. The blocking capacitor 304 is provided between the first balanced terminal 411 of the second balun 303 and the first electrode 141 of the second set (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off the DC current. Instead of providing the blocking capacitor 304, the second impedance matching circuit 302 may be configured to cut off a direct current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. Good. The first electrode 141 and the second electrode 145 of the second set may be supported by the vacuum container 110 via insulators 142 and 146, respectively.

  The plasma processing apparatus 1 may include a first high frequency power supply 101 and a first impedance matching circuit 102 arranged between the first high frequency power supply 101 and the first balun 103. The first high frequency power supply 101 supplies a high frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103, and the blocking capacitors 104a and 104b. Alternatively, the first high frequency power supply 101 supplies a high frequency between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first set of the first electrode 105a and the second electrode 105b form a first high frequency supply unit that supplies a high frequency to the internal space of the vacuum container 110.

  The plasma processing apparatus 1 may include a second high frequency power supply 301 and a second impedance matching circuit 302 arranged between the second high frequency power supply 301 and the second balun 303. The second high frequency power supply 301 supplies a high frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. The second high frequency power supply 301 supplies a high frequency between the first electrode 141 and the second electrode 145 of the second set via the second impedance matching circuit 302, the second balun 303 and the blocking capacitor 304. Alternatively, the second high frequency power supply 301 supplies a high frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303 and the second set of the first electrode 141 and the second electrode 145 form a second high frequency supply unit that supplies a high frequency to the internal space of the vacuum container 110.

  In the state where plasma is generated in the internal space of the vacuum container 110 by the supply of the high frequency from the first high frequency power supply 101, the first set of the first balance terminal 211 and the second balance terminal 212 of the first balun 103 are connected to the first set of the first set. The impedance when the side of the 1st electrode 105a and the 2nd electrode 105b (the side of the main body 10) is seen is set to Rp1-jXp1. Further, the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is X1. In this definition, satisfying 1.5 ≦ X1 / Rp1 ≦ 5000 is advantageous for stabilizing the potential of plasma formed in the internal space of the vacuum container 110.

  Further, in the state where plasma is generated in the internal space of the vacuum container 110 by the supply of the high frequency from the second high frequency power supply 301, the second set from the side of the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303. The impedance when the side of the first electrode 127 and the second electrode 130 (the side of the main body 10) is viewed as Rp2-jXp2. Further, the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is X2. In this definition, satisfying 1.5 ≦ X2 / Rp2 ≦ 5000 is advantageous for stabilizing the potential of plasma formed in the internal space of the vacuum container 110.

  The plasma processing apparatus 1 of the seventh embodiment may further include at least one of a mechanism for moving up and down the first electrode 141 forming the second set and a mechanism for rotating the first electrode 141 forming the second set. In the example shown in FIG. 13, the plasma processing apparatus 1 includes a drive mechanism 114 including both a mechanism for moving the first electrode 141 up and down and a mechanism for rotating the first electrode 141. Further, in the example shown in FIG. 13, the plasma processing apparatus 1 includes a mechanism 314 that moves up and down the second electrodes 145 that form the second set. A bellows forming a vacuum partition may be provided between the vacuum container 110 and the driving mechanisms 114 and 314.

  The function of the first balun 103 in the plasma processing apparatus 1 of the seventh embodiment shown in FIG. 13 will be described with reference to FIG. It is assumed that the current flowing through the first unbalanced terminal 201 is I1, the current flowing through the first balanced terminal 211 is I2, the current flowing through the second unbalanced terminal 202 is I2 ', and the current flowing out of the current I2 to ground is I3. When I3 = 0, that is, when no current flows to the ground on the side of the balance circuit, the isolation performance of the balance circuit with respect to the ground is the best. When I3 = I2, that is, when all of the current I2 flowing through the first balanced terminal 211 flows with respect to the ground, the isolation performance of the balanced circuit with respect to the ground is the worst. The index ISO indicating the degree of isolation performance can be given by the following equation, as in the first to fifth embodiments. Under this definition, the larger the absolute value of ISO, the better the isolation performance.

ISO [dB] = 20 log (I3 / I2 ')
In FIG. 14, Rp-jXp (= Rp / 2-jXp / 2 + Rp / 2-jXp / 2) is the first balanced terminal 211 and the second balanced terminal in the state where plasma is generated in the internal space of the vacuum container 110. The impedance (including the reactances of the blocking capacitors 104a and 104b) when the first electrode 105a and the second electrode 105b (the body 10 side) are viewed from the 212 side is shown. Rp represents a resistance component and -Xp represents a reactance component. Further, in FIG. 14, X indicates the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103. ISO has a correlation to X / Rp.

  FIG. 4 referred to in the description of the first embodiment illustrates the relationship among the currents I1 (= I2), I2 ', I3, ISO, and α (= X / Rp). The relationship of FIG. 4 holds in the seventh embodiment as well. Also in the seventh embodiment, the present inventor forms in the internal space of the vacuum container 110 (the space between the first electrode 105a and the second electrode 105b) that 1.5 ≦ X / Rp ≦ 5000 is satisfied. It has been found that it is advantageous for making the potential of the generated plasma (plasma potential) insensitive to the state of the inner surface of the vacuum container 110. Here, the fact that the plasma potential is insensitive to the state of the inner surface of the vacuum container 110 means that the plasma potential can be stabilized even when the plasma processing apparatus 1 is used for a long period of time. 1.5 ≦ X / Rp ≦ 5000 corresponds to −10.0 dB ≧ ISO ≧ −80 dB.

  15A to 15D show the results of simulating the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) when 1.5 ≦ X / Rp ≦ 5000 is satisfied. It is shown. FIG. 15A shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2 potential) when a resistive film (1 mΩ) is formed on the inner surface of the vacuum container 110. Is shown. FIG. 15B shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) when the resistive film (1000Ω) is formed on the inner surface of the vacuum container 110. Is shown. FIG. 15C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2) when an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. Potential). FIG. 15D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2) when the capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. Potential). From FIGS. 15A to 15D, it is understood that satisfying 1.5 ≦ X / Rp ≦ 5000 is advantageous for stabilizing the plasma potential in various states of the inner surface of the vacuum container 110.

  16A to 16D, the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in the case where 1.5 ≦ X / Rp ≦ 5000 are not satisfied are simulated. Results are shown. FIG. 16A shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential) and the potential of the second electrode 105b (cathode 2 potential) in the state where the resistive film (1 mΩ) is formed on the inner surface of the vacuum container 110. Is shown. FIG. 16B shows a plasma potential, a potential of the first electrode 105a (cathode 1 potential) and a potential of the second electrode 105b (cathode 2 potential) in a state where a resistive film (1000Ω) is formed on the inner surface of the vacuum container 110. Is shown. FIG. 16C shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2) when an inductive film (0.6 μH) is formed on the inner surface of the vacuum container 110. Potential). FIG. 16D shows the plasma potential, the potential of the first electrode 105a (cathode 1 potential), and the potential of the second electrode 105b (cathode 2) when the capacitive film (0.1 nF) is formed on the inner surface of the vacuum container 110. Potential). From FIGS. 16A to 16D, it is understood that when 1.5 ≦ X / Rp ≦ 5000 is not satisfied, the plasma potential changes depending on the state of the inner surface of the vacuum container 110.

  Here, X / Rp> 5000 (for example, X / Rp = ∞) and X / Rp <1.5 (for example, X / Rp = 1.16, X / Rp = 0.87). In both cases, the plasma potential is likely to change depending on the state of the inner surface of the vacuum container 110. When X / Rp> 5000, discharge is generated only between the first electrode 105a and the second electrode 105b in a state where no film is formed on the inner surface of the vacuum container 110. However, in the case of X / Rp> 5000, when a film starts to be formed on the inner surface of the vacuum container 110, the plasma potential reacts sensitively thereto, resulting in the results illustrated in FIGS. On the other hand, in the case of X / Rp <1.5, the current flowing into the ground through the vacuum container 110 is large, so that the influence of the state of the inner surface of the vacuum container 110 (electrical characteristics of the film formed on the inner surface) is affected. Becomes remarkable, and the plasma potential changes depending on the film formation. Therefore, as described above, it is advantageous to configure the plasma processing apparatus 1 so as to satisfy 1.5 ≦ X / Rp ≦ 5000.

  FIG. 17 schematically shows the configuration of the plasma processing apparatus 1 according to the eighth embodiment of the present invention. The plasma processing apparatus of the eighth embodiment can operate as a sputtering apparatus that forms a film on the substrate 112 by sputtering. Matters not mentioned as the plasma processing apparatus 1 of the eighth embodiment can be according to the first to seventh embodiments. The plasma processing apparatus 1 of the eighth embodiment includes a balun (first balun) 103, a vacuum container 110, a first electrode 105a, and a second electrode 105b. Alternatively, the plasma processing apparatus 1 may be understood to include the balun 103 and the main body 10, and the main body 10 includes the vacuum container 110, the first electrode 105a, and the second electrode 105b. The main body 10 has a first terminal 251 and a second terminal 252.

  The first electrode 105a has a first holding surface HS1 that holds a first target 109a as a first member, and the second electrode 105b has a second holding surface HS2 that holds a second target 109b as a second member. Can have. The first holding surface HS1 and the second holding surface HS2 can belong to one plane PL.

  The plasma processing apparatus 1 of the eighth embodiment may further include the second balun 303, the third electrode 141, and the fourth electrode 145. In other words, the plasma processing apparatus 1 includes the first balun 103, the second balun 303, the vacuum container 110, the first electrode 105a, the second electrode 105b, the third electrode 141, and the fourth electrode 145. Can be prepared. Alternatively, the plasma processing apparatus 1 includes a first balun 103, a second balun 303, and a main body 10, and the main body 10 includes a vacuum container 110, a first electrode 105a, a second electrode 105b, and a third electrode. It may be understood as including 141 and the fourth electrode 145. The main body 10 has a first terminal 251, a second terminal 252, a third terminal 451, and a fourth terminal 452.

  The first balun 103 has a first unbalanced terminal 201, a second unbalanced terminal 202, a first balanced terminal 211 and a second balanced terminal 212. An unbalanced circuit is connected to the first unbalanced terminal 201 and the second unbalanced terminal 202 side of the first balun 103, and the first balanced terminal 211 and the second balanced terminal 212 side of the first balun 103 are connected to each other. , A balanced circuit is connected. The second balun 303 may have the same configuration as the first balun 103. The second balun 303 has a third unbalanced terminal 401, a fourth unbalanced terminal 402, a third balanced terminal 411, and a fourth balanced terminal 412. An unbalanced circuit is connected to the third unbalanced terminal 401 and the fourth unbalanced terminal 402 side of the second balun 303, and a third balanced terminal 411 and a fourth balanced terminal 412 side of the second balun 303 are connected. , A balanced circuit is connected. The vacuum container 110 is grounded. The baluns 103 and 303 may have the configuration described in FIGS. 2A and 2B (FIG. 14), for example.

  The first electrode 105a holds the first target 109a and faces the space on the substrate 112 side to be processed with the first target 109a interposed therebetween. The second electrode 105b is arranged next to the first electrode 105a, holds the second target 109b, and faces the space on the side of the substrate 112 to be processed via the second target 109b. The targets 109a and 109b can be, for example, an insulator material or a conductor material. The first electrode 105 a is electrically connected to the first balanced terminal 211 of the first balun 103, and the second electrode 105 b is electrically connected to the second balanced terminal 212 of the first balun 103.

  The third electrode 141 holds the substrate 112. The fourth electrode 145 may be arranged around the first electrode 141. The third electrode 141 is electrically connected to the first balanced terminal 411 of the second balun 303, and the fourth electrode 145 is electrically connected to the second balanced terminal 412 of the second balun 303.

  In the above configuration, the first electrode 105a is electrically connected to the first terminal 251, the second electrode 105b is electrically connected to the second terminal 252, and the first terminal 251 is the first balance of the first balun 103. It can be understood as a configuration in which the second terminal 252 is electrically connected to the terminal 211 and the second terminal 252 is connected to the second balanced terminal 212 of the first balun 103. In addition, in the above configuration, the third electrode 141 is electrically connected to the third terminal 451, the fourth electrode 145 is electrically connected to the fourth terminal 452, and the third terminal 451 is the first terminal of the second balun 303. It can be understood as being electrically connected to the first balanced terminal 411 and the fourth terminal 452 is connected to the second balanced terminal 412 of the second balun 303.

  The first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 may be electrically connected by the first path PTH1. The reactance 511a may be arranged on the first path PTH1. In other words, the first electrode 105a and the first balanced terminal 211 (first terminal 251) of the first balun 103 can be electrically connected via the reactance 511a. The reactance 511a may include a capacitor, and the capacitor may be provided between the first balanced terminal 211 of the first balun 103 and the first electrode 105a (or the second balanced terminal 211 of the first balun 103 and the second balanced terminal 211). It can function as a blocking capacitor that blocks a DC current (between the terminal 212). The second electrode 105b and the second balanced terminal 212 (second terminal 252) of the first balun 103 may be electrically connected by the second path PTH2. The reactance 511b may be arranged on the second path PTH2. In other words, the second electrode 105b and the second balanced terminal 212 (third terminal 252) of the first balun 103 can be electrically connected via the reactance 511b. The reactance 511b may include a capacitor, and the capacitor may be disposed between the second balanced terminal 212 of the first balun 103 and the second electrode 105b (or the first balanced terminal 211 of the first balun 103 and the second balanced terminal 211). It can function as a blocking capacitor that blocks a DC current (between the terminal 212). The first electrode 105a and the second electrode 105b can be supported by the vacuum container 110 via insulators 132a and 132b, respectively.

  The plasma processing apparatus 1 may include a reactance 521a arranged between the first electrode 105a and the ground. The plasma processing apparatus 1 may include a reactance 521b arranged between the second electrode 105b and the ground. The plasma processing apparatus 1 may include a reactance 530 that connects the first path PTH1 and the second path PTH2.

  In one configuration example, the plasma processing apparatus 1 uses (a) the first as the adjusting reactance that influences the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b. 1 reactance 511a arranged in the first path PTH1 connecting the first balanced terminal 211 and the first electrode 105a, (b) reactance 521a arranged between the first electrode 105a and the ground, (c) second balanced terminal And the reactance 511b arranged on the second path PTH2 connecting the second electrode 105b and the second electrode 105b, (d) the reactance 521b arranged between the second electrode 105b and the ground, and (e) the first path PTH1. At least one of the reactance 530 connecting to the second path PTH2 is included.

  The third electrode 141 and the first balanced terminal 411 (third terminal 451) of the second balun 303 may be electrically connected via the blocking capacitor 304. The blocking capacitor 304 generates a direct current between the first balanced terminal 411 of the second balun 303 and the third electrode 141 (or between the first balanced terminal 411 and the second balanced terminal 412 of the second balun 303). Cut off. Instead of providing the blocking capacitor 304, the second impedance matching circuit 302 may be configured to cut off a direct current flowing between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303. Good. The third electrode 141 and the fourth electrode 145 may be supported by the vacuum container 110 via insulators 142 and 146, respectively.

  The plasma processing apparatus 1 may include a first high frequency power supply 101 that generates a high frequency supplied between the first unbalanced terminal 201 and the second unbalanced terminal 202. The high frequency power supply 101 can change the frequency of the high frequency supplied between the first unbalanced terminal 201 and the second unbalanced terminal 202. By changing the frequency, the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted. Alternatively, the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b can be adjusted by changing the frequency.

  Therefore, by adjusting the frequency, the relationship between the amount by which the first target 109a is sputtered and the amount by which the second target 109b is sputtered can be adjusted. Alternatively, by adjusting the frequency, the balance between the amount by which the first target 109a is sputtered and the amount by which the second target 109b is sputtered can be adjusted. Thereby, the relationship between the consumption amount of the first target 109a and the consumption amount of the second target 109b can be adjusted. Alternatively, the balance between the consumption amount of the first target 109a and the consumption amount of the second target 109b can be adjusted. Such a configuration is advantageous, for example, in that the replacement timing of the first target 109a and the replacement timing of the second target 109b are the same, and downtime of the plasma processing apparatus 1 is reduced. Further, by adjusting the frequency, it is possible to adjust the thickness distribution of the film formed on the substrate 112.

  The plasma processing apparatus 1 may further include a first impedance matching circuit 102 arranged between the first high frequency power supply 101 and the first balun 103. The first high frequency power supply 101 supplies a high frequency between the first electrode 105a and the second electrode 105b via the first impedance matching circuit 102, the first balun 103 and the first path PTH1. Alternatively, the first high frequency power supply 101 supplies a high frequency between the first terminal 251 and the second terminal 252 of the main body 10 via the first impedance matching circuit 102 and the first balun 103. The first balun 103 and the first electrode 105a and the second electrode 105b form a first high frequency supply unit that supplies a high frequency to the internal space of the vacuum container 110.

  The plasma processing apparatus 1 may include a second high frequency power supply 301 and a second impedance matching circuit 302 arranged between the second high frequency power supply 301 and the second balun 303. The second high frequency power supply 301 supplies a high frequency between the first unbalanced terminal 401 and the second unbalanced terminal 402 of the second balun 303 via the second impedance matching circuit 302. The second high frequency power supply 301 supplies a high frequency between the third electrode 141 and the fourth electrode 145 via the second impedance matching circuit 302, the second balun 303 and the blocking capacitor 304. Alternatively, the second high frequency power supply 301 supplies a high frequency between the third terminal 451 and the fourth terminal 452 of the main body 10 via the second impedance matching circuit 302 and the second balun 303. The second balun 303, the third electrode 141, and the fourth electrode 145 form a second high frequency supply unit that supplies a high frequency to the internal space of the vacuum container 110.

  The plasma processing apparatus 1 may include a drive mechanism 114 that rotates the substrate 112 by rotating the third electrode 141 that functions as a substrate holder. The drive mechanism 114 may include an elevating mechanism that elevates and lowers the substrate 112 by elevating and lowering the third electrode 141 that functions as a substrate holding unit. A bellows 113 forming a vacuum partition may be provided between the vacuum container 110 and the driving mechanism 114.

  In the state where plasma is generated in the internal space of the vacuum container 110 by the supply of the high frequency from the first high frequency power supply 101, the first electrode 105a and the first balanced terminal 211 of the first balun 103 are connected to the first balanced terminal 211 and the second balanced terminal 212. The impedance when the side of the second electrode 105b (the side of the main body 10) is viewed is Rp1-jXp1. Further, the reactance component (inductance component) of the impedance of the first coil 221 of the first balun 103 is X1. In this definition, satisfying 1.5 ≦ X1 / Rp1 ≦ 5000 is particularly advantageous for stabilizing the potential of plasma formed in the internal space of the vacuum container 110. However, it should be noted that satisfying the condition of 1.5 ≦ X / Rp1 ≦ 5000 is not essential in the eighth embodiment but is an advantageous condition. In the eighth embodiment, by providing the balun 103, the plasma potential can be stabilized more than in the case where the balun 103 is not provided. Further, by providing the high frequency power supply 101 capable of changing the frequency of the generated high frequency, the relationship between the amount of the first target 109a sputtered and the amount of the second target 109b sputtered can be adjusted. Further, by forming the film on the substrate 112 while rotating the substrate 112 by the driving mechanism 114, it is possible to reduce variation in the thickness of the film in the plane of the substrate 112.

  Further, in the state where plasma is generated in the internal space of the vacuum container 110 by the supply of the high frequency from the second high frequency power source 301, the third balun 303 is connected from the first balanced terminal 411 and the second balanced terminal 412 side to the third electrode. The impedance when looking at the side of 141 and the 4th electrode 145 (the side of the main body 10) is Rp2-jXp2. Further, the reactance component (inductance component) of the impedance of the first coil 221 of the second balun 303 is X2. In this definition, satisfying 1.5 ≦ X2 / Rp2 ≦ 5000 is particularly advantageous for stabilizing the potential of plasma formed in the internal space of the vacuum container 110. However, it should be noted that satisfying the condition of 1.5 ≦ X / Rp2 ≦ 5000 is not essential in the eighth embodiment and is an advantageous condition.

  Hereinafter, ninth to twelfth embodiments in which the plasma processing apparatus 1 of the eighth embodiment is embodied will be described with reference to FIGS. 18 to 23, FIGS. 28A to 28C, and FIGS. 29A to 29E. FIG. 18 schematically shows the configuration of the plasma processing apparatus 1 according to the ninth embodiment of the present invention. Matters not mentioned as the ninth embodiment can comply with the eighth embodiment. The plasma processing apparatus 1 of the ninth embodiment includes at least one of the reactance 511a arranged on the first path PTH1 and the reactance 511b arranged on the second path PTH2. Here, the plasma processing apparatus 1 preferably includes both the reactance 511a arranged on the first path PTH1 and the reactance 511b arranged on the second path PTH2.

  The first reactance 511a may include an inductor 601a and a capacitor 602a. The inductor 601a may be arranged between the first balanced terminal 211 (first terminal 251) and the capacitor 602a, or may be arranged between the capacitor 602a and the first electrode 105a. The second reactance 511b may include an inductor 601b and a capacitor 602b. The inductor 601b may be arranged between the second balanced terminal 212 (second terminal 252) and the capacitor 602b, or may be arranged between the capacitor 602b and the second electrode 105b.

  The plasma processing apparatus 1 may include a drive mechanism 114 that rotates the substrate 112 by rotating the third electrode 141 that functions as a substrate holder. The drive mechanism 114 may include an elevating mechanism that elevates and lowers the substrate 112 by elevating and lowering the third electrode 141 that functions as a substrate holding unit. A bellows 113 forming a vacuum partition may be provided between the vacuum container 110 and the driving mechanism 114.

  FIG. 22 shows the normalized thickness distribution of the film formed on the substrate 112 when the frequency of the high frequency generated by the high frequency power supply 101 is set to 12.56 MHz in the plasma processing apparatus 1 of the ninth embodiment. It is shown. Further, in FIG. 22, in the plasma processing apparatus 1 according to the ninth embodiment, the normalized thickness of the film formed on the substrate 112 when the frequency of the high frequency generated by the high frequency power supply 101 is set to 13.56 MHz. The distribution is shown. The horizontal axis is the position in the horizontal direction (direction parallel to the surface of the substrate 112) in FIG. 18, and indicates the distance from the center of the substrate 112. When the frequency of the high frequency generated by the high frequency power supply 101 is 12.56 MHz, the thickness distribution of the film is greatly different between the left side and the right side of the center of the substrate 112. On the other hand, when the frequency of the high frequency generated by the high frequency power supply 101 is 13.56 MHz, the film thickness distribution is highly symmetrical between the left side and the right side of the center of the substrate 112. When the frequency of the high frequency generated by the high frequency power supply 101 is 13.56 MHz, the first voltage applied to the first electrode 105a is higher than that when the frequency of the high frequency generated by the high frequency power supply 101 is 12.56 MHz. Good balance with the second voltage applied to the second electrode 105b.

  In the plasma processing apparatus 1 of the ninth embodiment, FIG. 23 shows the voltage (first voltage) of the first electrode 105a and the voltage (second voltage) of the second electrode 105b when the frequency of the high frequency generated by the high frequency power supply 101 is changed. The second voltage) is illustrated. The voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) can be adjusted by changing the frequency of the high frequency generated by the high-frequency power supply 101. Alternatively, the relationship between the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) can be adjusted by changing the frequency of the high frequency generated by the high frequency power supply 101. For example, the frequency of the high frequency generated by the high frequency power supply 101 can be adjusted so that the voltage of the first electrode 105a (first voltage) and the voltage of the second electrode 105b (second voltage) become equal. This makes it possible to make the amount of the first target 109a sputtered equal to the amount of the second target 109b sputtered. This is advantageous, for example, to make the replacement timing of the first target 109a and the replacement timing of the second target 109b the same, and to reduce the downtime of the plasma processing apparatus 1.

  28A to 28C, in the plasma processing apparatus 1 of the ninth embodiment, when the TS distance, which is the distance (vertical distance) between the substrate 112 and the targets 109a and 10b, is 120 mm, 105 mm, and 100 mm, the substrate 112 is shown. The thickness distribution of the film formed in FIG. Here, FIG. 28A is a film thickness distribution formed on the substrate 112 when the TS distance is 120 mm, and FIG. 28B is a film thickness distribution formed on the substrate 112 when the TS distance is 105 mm. 28C shows the thickness distribution of the film formed on the substrate 112 when the TS distance is 100 mm. The film formation on the substrate 112 was performed while the substrate 112 was rotated by the driving mechanism 114.

  29A to 29E, in the plasma processing apparatus 1 of the ninth embodiment, the frequency of the high frequency generated by the high frequency power supply 101 is 12.56 MHz, 13.06 MHz, 13.56 MHz, 14.06 MHz, 14.56 MHz. Sometimes the thickness distribution of the film formed on the substrate 112 is illustrated. Here, FIG. 29A is a film thickness distribution of the film formed on the substrate 112 when the high frequency frequency is 12.56 MHz, and FIG. 29B is formed on the substrate 112 when the high frequency frequency is 13.06 MHz. FIG. 29C shows the thickness distribution of the film formed on the substrate 112 when the high frequency is 13.56 MHz. FIG. 29D shows the thickness distribution of the film formed on the substrate 112 when the high frequency is set to 14.06 MHz, and FIG. 29E shows the film thickness formed on the substrate 112 when the high frequency is set to 14.56 MHz. The thickness distribution is shown.

  29A to 29E, when the frequency of the high frequency generated by the high frequency power supply 101 is 14.06 MHz, the thickness variation of the film formed on the substrate 112 is the smallest. From the results shown in FIG. 23, the voltage applied to the first electrode 105a and the voltage applied to the second electrode 105b are substantially equal when the frequency of the high frequency generated by the high frequency power supply 101 is around 13.4 MHz. I understand. On the other hand, according to the results shown in FIGS. 29A to 29E, when the frequency of the high frequency generated by the high frequency power supply 101 is 14.06 MHz, the variation in the thickness of the film formed on the substrate 112 is the smallest. From this, when the substrate 112 is rotated, when the voltage applied to the first electrode 105a is substantially equal to the voltage applied to the second electrode 105b, the thickness variation of the film formed on the substrate 112 is minimized. It is understood that is not always the case. Therefore, when the film is formed while rotating the substrate 112, the frequency of the high frequency generated by the high frequency power supply 101 should be determined so that the thickness variation of the film formed on the substrate 112 is minimized. The frequency of the high frequency generated by the high frequency power supply 101 can be determined through an experiment or a simulation.

  FIG. 19 schematically shows the configuration of the plasma processing apparatus 1 according to the tenth embodiment of the present invention. Matters not mentioned in the tenth embodiment can comply with the eighth embodiment. The plasma processing apparatus 1 of the tenth embodiment includes at least one of a reactance 521a arranged between the first electrode 105a and the ground and a reactance 521b arranged between the second electrode 105b and the ground. ing. The reactance 521a can include, for example, an inductor 607a and a capacitor 606a. The reactance 521b can include, for example, an inductor 607b and a capacitor 606b.

  The plasma processing apparatus 1 further includes a reactance 511a (in this example, the inductor 603a and the capacitor 602a) arranged on the first path PTH1 and a reactance 511b (in this example, the inductor 603b and the capacitor 602a) arranged on the second path PTH2. 602b).

  FIG. 20 schematically shows the configuration of the plasma processing apparatus 1 according to the eleventh embodiment of the present invention. Matters not mentioned in the eleventh embodiment can comply with the eighth embodiment. The plasma processing apparatus 1 of the eleventh embodiment includes an inductor 608 as a reactance 530 that connects the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 further includes a reactance 511a (in this example, the inductor 603a and the capacitor 602a) arranged on the first path PTH1 and a reactance 511b (in this example, the inductor 603b and the capacitor 602a) arranged on the second path PTH2. 602b).

  FIG. 21 schematically shows the configuration of the plasma processing apparatus 1 according to the twelfth embodiment of the present invention. Matters not mentioned in the twelfth embodiment can comply with the eighth embodiment. The plasma processing apparatus 1 of the twelfth embodiment includes a capacitor 609 as a variable reactance 530 that connects the first path PTH1 and the second path PTH2. The plasma processing apparatus 1 further includes a reactance 511a (in this example, the inductor 603a and the capacitor 602a) arranged on the first path PTH1 and a reactance 511b (in this example, the inductor 603b and the capacitor 602a) arranged on the second path PTH2. 602b).

  Hereinafter, an operation of adjusting the frequency of the high frequency generated by the high frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b will be described with reference to FIGS. To do. FIG. 24 schematically shows the configuration of the plasma processing apparatus 1 according to the thirteenth embodiment of the present invention. The plasma processing apparatus 1 of the thirteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the ninth embodiment shown in FIG. The control unit 700 adjusts the frequency of the high frequency generated by the high frequency power supply 101 so that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b have respective target values. For example, the control unit 700 adjusts the frequency of the high frequency generated by the high frequency power supply 101 so that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b become the target values V1T and V2T, respectively. A command value CNT is generated. The target values V1T and V2T can be determined in advance so that the thickness of the film formed on the substrate 112 falls within the target variation.

  FIG. 25 schematically shows the configuration of the plasma processing apparatus 1 of the fourteenth embodiment of the present invention. The plasma processing apparatus 1 of the fourteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the tenth embodiment shown in FIG. The controller 700 adjusts the frequency of the high frequency generated by the high frequency power supply 101 so that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b become the target values V1T and V2T, respectively. For example, the control unit 700 adjusts the frequency of the high frequency generated by the high frequency power supply 101 so that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b become the target values V1T and V2T, respectively. A command value CNT is generated. The target values V1T and V2T can be determined in advance so that the thickness of the film formed on the substrate 112 falls within the target variation.

  FIG. 26 schematically shows the configuration of the plasma processing apparatus 1 according to the fifteenth embodiment of the present invention. The plasma processing apparatus 1 of the fifteenth embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the eleventh embodiment shown in FIG. The control unit 700 adjusts the frequency of the high frequency generated by the high frequency power supply 101 so that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b have respective target values. For example, the control unit 700 adjusts the frequency of the high frequency generated by the high frequency power supply 101 so that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b become the target values V1T and V2T, respectively. A command value CNT is generated. The target values V1T and V2T can be determined in advance so that the thickness of the film formed on the substrate 112 falls within the target variation.

  FIG. 27 schematically shows the configuration of the plasma processing apparatus 1 according to the 16th embodiment of the present invention. The plasma processing apparatus 1 of the 16th embodiment has a configuration in which a control unit 700 is added to the plasma processing apparatus 1 of the 12th embodiment shown in FIG. The control unit 700 controls the high frequency power supply 101 so that, for example, the first voltage V1 and the second voltage V2 are equal based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Adjust the frequency of the generated high frequency. For example, the control unit 700 adjusts the frequency of the high frequency generated by the high frequency power supply 101 so that the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b become the target values V1T and V2T, respectively. A command value CNT is generated. The target values V1T and V2T can be determined in advance so that the thickness of the film formed on the substrate 112 falls within the target variation.

  In the thirteenth to sixteenth embodiments described with reference to FIGS. 24 to 27, the control unit 700 controls the high frequency power supply 101 based on the first voltage V1 of the first electrode 105a and the second voltage V2 of the second electrode 105b. Adjust the frequency of the high frequency generated. Instead of such a configuration, the control unit 700 adjusts the frequency of the high frequency generated by the high frequency power supply 101 based on the plasma intensity near the first electrode 105a and the plasma intensity near the second electrode 105b. It may be configured. The plasma intensity in the vicinity of the first electrode 105a can be detected by, for example, a photoelectric conversion device. Similarly, the plasma intensity in the vicinity of the second electrode 105b can be detected by, for example, a photoelectric conversion device. The control unit 700 uses, for example, the plasma intensity in the vicinity of the first electrode 105a and the plasma intensity in the vicinity of the second electrode 105b based on the plasma intensity in the vicinity of the first electrode 105a and the plasma intensity in the vicinity of the second electrode 105b. The frequency of the high frequency generated by the high frequency power supply 101 can be adjusted so that and become equal to each other.

  Next, a plasma processing method as a seventeenth embodiment of the present invention will be described. In the plasma processing method according to the seventeenth embodiment, the substrate 112 is processed in the plasma processing apparatus 1 according to any one of the eighth to sixteenth embodiments. In the plasma processing method, the frequency of the high frequency generated by the high frequency power supply 101 is adjusted so that the relationship between the first voltage applied to the first electrode 105a and the second voltage applied to the second electrode 105b is adjusted. The method may include a step and a step of processing the substrate 112 while rotating the substrate 112 by the driving mechanism 114 after the step. The treatment may include forming a film on the substrate 112 by sputtering, or etching the substrate 112.

  The present invention is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit and scope of the present invention. Therefore, in order to make the scope of the present invention public, the following claims are attached.

1: Plasma processing apparatus, 10: Main body, 101: High frequency power supply, 102: Impedance matching circuit, 103: Balun, 104: Blocking capacitor, 106: First electrode, 107, 108: Insulator, 109: Target, 110: Vacuum Container, 111: second electrode, 112: substrate, 201: first unbalanced terminal, 202: second unbalanced terminal, 211: first balanced terminal, 212: second balanced terminal, 251: first terminal, 252: 2nd terminal, 221: 1st coil, 222: 2nd coil, 223: 3rd coil, 224: 4th coil, 511a, 511b, 521a, 521b, 530: reactance, 700: control part

Claims (20)

A balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal and a second balanced terminal;
A grounded vacuum container,
A first electrode electrically connected to the first balanced terminal;
A second electrode electrically connected to the second balanced terminal;
An adjusted reactance that affects the relationship between a first voltage applied to the first electrode and a second voltage applied to the second electrode;
A high frequency power supply for generating a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal;
A substrate holding unit that holds the substrate;
A drive mechanism for rotating the substrate holder,
The high frequency power source is capable of changing the frequency of the high frequency, and the relationship is adjusted by changing the frequency.
A plasma processing apparatus characterized by the above. The first electrode has a first holding surface that holds a first member, the second electrode has a second holding surface that holds a second member, and the first holding surface and the second holding surface. Faces belong to one plane,
The plasma processing apparatus according to claim 1, wherein: The first electrode holds a first target, the second electrode holds a second target, the first electrode faces a space on the side of the substrate through the first target, and The two electrodes face the space through the second target,
The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus. The adjusted reactance is (a) a reactance arranged in a first path connecting the first balanced terminal and the first electrode, (b) a reactance arranged between the first electrode and ground, ( c) a reactance arranged on a second path connecting the second balanced terminal and the second electrode, (d) a reactance arranged between the second electrode and ground, and (e) the first reactance. At least one of reactance connecting one path and the second path,
The plasma processing apparatus according to claim 3, wherein the plasma processing apparatus is a plasma processing apparatus. The adjusted reactance is applied to a first reactance arranged in a first path connecting the first balanced terminal and the first electrode, and to a second path connecting the second balanced terminal and the second electrode. A second reactance arranged in at least one of,
The plasma processing apparatus according to claim 3, wherein the plasma processing apparatus is a plasma processing apparatus. The first reactance includes an inductor,
The second reactance includes an inductor,
The plasma processing apparatus according to claim 5, wherein the plasma processing apparatus is a plasma processing apparatus. The first reactance includes a capacitor,
The second reactance includes a capacitor,
The plasma processing apparatus according to claim 5, wherein the plasma processing apparatus is a plasma processing apparatus. The adjusted reactance includes a third reactance arranged on a third path connecting the first electrode and the ground, and a fourth reactance arranged on a fourth path connecting the second electrode and the ground. Including at least one,
The plasma processing apparatus according to claim 3, wherein the plasma processing apparatus is a plasma processing apparatus. The third reactance includes a capacitor,
The fourth reactance includes a capacitor,
The plasma processing apparatus according to claim 8, wherein the plasma processing apparatus is a plasma processing apparatus. The third reactance includes an inductor,
The fourth reactance includes an inductor,
The plasma processing apparatus according to claim 8 or 9, characterized in that. The adjusted reactance includes a reactance that connects a first path that connects the first balanced terminal and the first electrode, and a second path that connects the second balanced terminal and the second electrode,
The plasma processing apparatus according to claim 3, wherein the plasma processing apparatus is a plasma processing apparatus. The reactance includes an inductor,
The plasma processing apparatus according to claim 11, wherein the plasma processing apparatus is a plasma processing apparatus. The reactance includes a capacitor,
The plasma processing apparatus according to claim 11, wherein the plasma processing apparatus is a plasma processing apparatus. A control unit that controls the frequency of the high frequency generated by the high frequency power source based on the voltage of the first electrode and the voltage of the second electrode;
14. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus. A control unit that controls the frequency of the high frequency generated by the high frequency power source based on the plasma intensity in the vicinity of the first electrode and the plasma intensity in the vicinity of the second electrode;
14. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus. Rp is a resistance component between the first balanced terminal and the second balanced terminal when the first electrode and the second electrode are viewed from the first balanced terminal and the second balanced terminal. , 1.5 ≦ X / Rp ≦ 5000, where X is the inductance between the first unbalanced terminal and the first balanced terminal,
16. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus. The balun has a first coil that connects the first unbalanced terminal and the first balanced terminal, and a second coil that connects the second unbalanced terminal and the second balanced terminal.
17. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is a plasma processing apparatus. The balun further has a third coil and a fourth coil connected between the first balanced terminal and the second balanced terminal, and the third coil and the fourth coil are connected to the third coil. The voltage at the connection node with the fourth coil is set to the midpoint between the voltage at the first balanced terminal and the voltage at the second balanced terminal,
The plasma processing apparatus of claim 17, wherein the plasma processing apparatus is a plasma processing apparatus. An impedance matching circuit arranged between the high frequency power supply and the balun,
The plasma processing apparatus according to claim 1, further comprising: A balun having a first unbalanced terminal, a second unbalanced terminal, a first balanced terminal and a second balanced terminal, a vacuum container grounded, and a first electrode electrically connected to the first balanced terminal, A second electrode electrically connected to the second balanced terminal, and a regulating reactance that affects the relationship between the first voltage applied to the first electrode and the second voltage applied to the second electrode. A high frequency power source for generating a high frequency supplied between the first unbalanced terminal and the second unbalanced terminal, a substrate holding unit for holding a substrate, and a drive mechanism for rotating the substrate holding unit. A plasma processing method for processing a substrate in a plasma processing apparatus comprising:
Adjusting the frequency of the high frequency generated by the high frequency power supply so that the relationship is adjusted;
After the step, processing the substrate while rotating the substrate by the drive mechanism;
A plasma processing method comprising: