JP2020047948A5 - - Google Patents

Claims (7)

A crystalline oxide semiconductor film containing an oxide semiconductor containing at least aluminum and gallium as a main component, wherein the concentration of aluminum in the metal element in the film is 62.8 atomic% or more and 80 atomic% or less , and the film thickness is crystalline oxide semiconductor film, wherein the but is 5 nm or more. The crystalline oxide semiconductor film according to claim 1, wherein the aluminum concentration in the metal element in the film is 77 atomic% or less. The crystalline oxide semiconductor film according to claim 1 or 2, wherein the oxide semiconductor has a corundum structure. The crystalline oxide semiconductor film according to any one of claims 1 to 3, wherein the film thickness is 1 μm or more. Oxide semiconductors are α- (Al _x Ga _1-x ) ₂ O ₃ (where 1>X> 0) or α- (Al _Z1 Ga _Z2 In _Z3 ) ₂ O ₃ (where 1> Z1, Z2). The crystalline oxide semiconductor film according to any one of claims 1 to 4 in which Z3> 0 and Z1 + Z2 + Z3 = 1). A semiconductor device including the crystalline semiconductor film according to any one of claims 1 to 5 . The semiconductor device according to claim 6, which is a semiconductor laser, a diode, or a transistor.