JP2019506536A - 材料を収容・加熱する坩堝及び坩堝と加熱器セットを含むシステム - Google Patents
材料を収容・加熱する坩堝及び坩堝と加熱器セットを含むシステム Download PDFInfo
- Publication number
- JP2019506536A JP2019506536A JP2018553289A JP2018553289A JP2019506536A JP 2019506536 A JP2019506536 A JP 2019506536A JP 2018553289 A JP2018553289 A JP 2018553289A JP 2018553289 A JP2018553289 A JP 2018553289A JP 2019506536 A JP2019506536 A JP 2019506536A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- heater
- recess
- recesses
- sublimated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 95
- 238000010438 heat treatment Methods 0.000 title abstract description 8
- 238000009413 insulation Methods 0.000 claims description 12
- 230000007613 environmental effect Effects 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 239000011364 vaporized material Substances 0.000 claims description 3
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 230000008020 evaporation Effects 0.000 description 8
- 230000008022 sublimation Effects 0.000 description 6
- 238000000859 sublimation Methods 0.000 description 6
- 230000003628 erosive effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
110 第一表面
120 第二表面
131〜134 側表面
141〜144 側壁
141a、141b、143a、143b 側壁中の材料棒
11 凹穴型凹み部
12 底部凹み部
13a〜13d 側面凹み部
14a、14c 断熱凹み部
20 加熱器セット
21a、21b 底部加熱器
2211a、2212a 角部加熱器
2221a、2222a 中間加熱器
223 側面加熱器
200 チャンバ
210 蒸発又は昇華に用いられるシステム
220 取付板
230 チャンバ壁
241a、241b 底部加熱器用のエネルギー供給連接
242a、242c 側面加熱器用のエネルギー供給連接
250 基板
260 伝送ローラ
Claims (10)
- 蒸発又は昇華される材料を加熱するために用いられる坩堝であって、
前記蒸発又は昇華される材料を受入するために用いられるのに適し、前記坩堝の第一表面中に形成される少なくとも1つの凹穴型凹み部、及び
前記第一表面に対向する前記坩堝の第二表面中に形成される底部凹み部、及び/又は、前記第一表面から前記第二表面まで延伸する前記坩堝の側壁中に形成され、前記坩堝の前記第二表面に近接して開口を有する側面凹み部とを含む、
蒸発又は昇華される材料を加熱するために用いられる坩堝。 - 前記坩堝が複数の側面凹み部を含み、前記坩堝のすべての側壁のそれぞれの中において、前記側面凹み部に含まれた異なる側面凹み部を1つ形成する請求項1に記載の坩堝。
- 前記坩堝が、前記側面凹み部を含み、且つ、さらに断熱凹み部を含み、前記断熱凹み部が、前記側面凹み部の前記坩堝の前記凹穴型凹み部に近接しない側で、前記側面凹み部に近接して前記坩堝の同一側壁内に形成され、前記側面凹み部及び前記断熱凹み部が前記坩堝の材料によって互いに隔てられる請求項1又は請求項2に記載の坩堝。
- 前記坩堝は、高熱伝導率を有し、且つ、前記蒸発又は昇華される材料あるいは環境雰囲気の成分に対して不活性で且つ拡散しない材料によって作られることを特徴とする請求項1乃至請求項3のいずれか1項に記載の坩堝。
- 前記坩堝の材料が、グラファイト、シリコンカーバイド及びオキサイドセラミックス材料を含む材料グループから選択される請求項4に記載の坩堝。
- 材料を蒸発又は昇華させるために用いられるシステムであって、
請求項1乃至請求項5のいずれか1項に記載の坩堝と、
前記坩堝の前記底部凹み部又は前記側面凹み部の中に配置される少なくとも1つの加熱器を含み、前記坩堝を加熱するために用いられる加熱器セットとを含む、
材料を蒸発又は昇華させるために用いられるシステム。 - 前記坩堝が複数の側面凹み部を含み、且つ、前記加熱器セットが複数の加熱器を含み、前記側面凹み部のそれぞれの中に、前記加熱器のうちの1つの特定の加熱器を配置する請求項6に記載のシステム。
- 前記少なくとも1つの加熱器は、前記蒸発される材料又は環境雰囲気の成分に対して不活性でない材料によって作られる請求項6又は請求項7に記載のシステム。
- 前記少なくとも1つの加熱器には、高熱伝導率を有し、且つ、蒸発又は昇華される材料あるいは環境雰囲気の成分に対して不活性で且つ拡散しない材料が、塗布される請求項8に記載のシステム。
- 前記システムが、環境雰囲気の影響を避けるために前記坩堝の前記底部凹み部又は前記側面凹み部のうちの少なくとも1つを密封する少なくとも1つのカバーをさらに含む請求項6乃至請求項9のいずれか1項に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201511026677.3A CN106929805B (zh) | 2015-12-31 | 2015-12-31 | 容纳并加热材料的坩埚以及包括坩埚和加热器布置的系统 |
CN201511026677.3 | 2015-12-31 | ||
PCT/CN2016/112150 WO2017114364A1 (zh) | 2015-12-31 | 2016-12-26 | 容纳并加热材料的坩埚以及包括坩埚和加热器布置的系统 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019506536A true JP2019506536A (ja) | 2019-03-07 |
JP6681125B2 JP6681125B2 (ja) | 2020-04-15 |
Family
ID=59225890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018553289A Active JP6681125B2 (ja) | 2015-12-31 | 2016-12-26 | 材料を収容・加熱する坩堝及び坩堝と加熱器セットを含むシステム |
Country Status (6)
Country | Link |
---|---|
US (1) | US20190119807A1 (ja) |
EP (1) | EP3399069B1 (ja) |
JP (1) | JP6681125B2 (ja) |
KR (1) | KR102138990B1 (ja) |
CN (1) | CN106929805B (ja) |
WO (1) | WO2017114364A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107805782B (zh) * | 2017-11-27 | 2019-09-20 | 深圳市华星光电半导体显示技术有限公司 | 一种蒸镀装置 |
JP7018816B2 (ja) * | 2018-04-26 | 2022-02-14 | 昭和電工株式会社 | 坩堝及びSiC単結晶成長装置 |
KR102198114B1 (ko) * | 2020-09-16 | 2021-01-04 | 조슬기 | 수경재배용 이산화탄소 공급장치를 구비하는 다년생 수삼 수경재배장치 |
US20220228250A1 (en) * | 2021-01-15 | 2022-07-21 | Phoenix Silicon International Corp. | Crucible and vapor deposition apparatus |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3636305A (en) * | 1971-03-10 | 1972-01-18 | Gte Sylvania Inc | Apparatus for metal vaporization comprising a heater and a refractory vessel |
JPH0610118A (ja) * | 1992-06-29 | 1994-01-18 | Nec Kansai Ltd | 蒸着方法及び蒸発装置 |
JP2003166049A (ja) * | 2001-11-28 | 2003-06-13 | Murata Mfg Co Ltd | 蒸着用ルツボ |
JP2007270261A (ja) * | 2006-03-31 | 2007-10-18 | Kyocera Corp | 蒸着装置、蒸着方法、有機el装置の製造方法、及び蒸着用セル |
CN101550532A (zh) * | 2009-05-14 | 2009-10-07 | 苏州大学 | 用于真空镀膜设备的加热装置 |
WO2013001827A1 (ja) * | 2011-06-29 | 2013-01-03 | パナソニック株式会社 | 加熱装置、真空加熱方法及び薄膜製造方法 |
CN203639543U (zh) * | 2013-12-16 | 2014-06-11 | 中国电子科技集团公司第十八研究所 | 一种硒源蒸发装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008016247A1 (en) * | 2006-08-04 | 2008-02-07 | Soonchunhyang University Industry Academy Cooperation Foundation | Linear deposition sources for deposition processes |
KR101106289B1 (ko) * | 2006-08-04 | 2012-01-18 | 순천향대학교 산학협력단 | 증착 공정을 위한 선형 증착 소스 |
CN102245813B (zh) * | 2008-12-08 | 2014-08-06 | Ii-Vi有限公司 | 改进的轴向梯度传输(agt)生长工艺和利用电阻加热的装置 |
KR101456831B1 (ko) * | 2012-06-20 | 2014-11-03 | 엘지디스플레이 주식회사 | 디스플레이장치 제조용 가열장치 |
KR20150072828A (ko) * | 2013-12-20 | 2015-06-30 | 엘지디스플레이 주식회사 | 유기발광표시장치 제조용 증착 소스 유닛 |
KR102218677B1 (ko) * | 2014-01-03 | 2021-02-23 | 삼성디스플레이 주식회사 | 증착원 |
JP6358446B2 (ja) * | 2014-03-11 | 2018-07-18 | 株式会社Joled | 蒸着装置及びその制御方法、蒸着装置を用いた蒸着方法、及びデバイスの製造方法 |
DE102014007521A1 (de) * | 2014-05-23 | 2015-11-26 | Manz Ag | Verdampferquelle für die Oberflächenbehandlung von Substraten |
CN104357797B (zh) * | 2014-11-14 | 2017-01-18 | 京东方科技集团股份有限公司 | 一种坩埚用加热装置、坩埚和蒸发源 |
-
2015
- 2015-12-31 CN CN201511026677.3A patent/CN106929805B/zh active Active
-
2016
- 2016-12-26 KR KR1020187022190A patent/KR102138990B1/ko active Active
- 2016-12-26 US US16/064,423 patent/US20190119807A1/en not_active Abandoned
- 2016-12-26 JP JP2018553289A patent/JP6681125B2/ja active Active
- 2016-12-26 EP EP16881153.7A patent/EP3399069B1/en active Active
- 2016-12-26 WO PCT/CN2016/112150 patent/WO2017114364A1/zh active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3636305A (en) * | 1971-03-10 | 1972-01-18 | Gte Sylvania Inc | Apparatus for metal vaporization comprising a heater and a refractory vessel |
JPH0610118A (ja) * | 1992-06-29 | 1994-01-18 | Nec Kansai Ltd | 蒸着方法及び蒸発装置 |
JP2003166049A (ja) * | 2001-11-28 | 2003-06-13 | Murata Mfg Co Ltd | 蒸着用ルツボ |
JP2007270261A (ja) * | 2006-03-31 | 2007-10-18 | Kyocera Corp | 蒸着装置、蒸着方法、有機el装置の製造方法、及び蒸着用セル |
CN101550532A (zh) * | 2009-05-14 | 2009-10-07 | 苏州大学 | 用于真空镀膜设备的加热装置 |
WO2013001827A1 (ja) * | 2011-06-29 | 2013-01-03 | パナソニック株式会社 | 加熱装置、真空加熱方法及び薄膜製造方法 |
CN203639543U (zh) * | 2013-12-16 | 2014-06-11 | 中国电子科技集团公司第十八研究所 | 一种硒源蒸发装置 |
Also Published As
Publication number | Publication date |
---|---|
EP3399069A1 (en) | 2018-11-07 |
KR102138990B1 (ko) | 2020-07-29 |
JP6681125B2 (ja) | 2020-04-15 |
KR20180098668A (ko) | 2018-09-04 |
CN106929805B (zh) | 2022-02-25 |
US20190119807A1 (en) | 2019-04-25 |
CN106929805A (zh) | 2017-07-07 |
EP3399069B1 (en) | 2021-12-08 |
WO2017114364A1 (zh) | 2017-07-06 |
EP3399069A4 (en) | 2019-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2019506536A (ja) | 材料を収容・加熱する坩堝及び坩堝と加熱器セットを含むシステム | |
US10689749B2 (en) | Linear evaporation source and vacuum deposition apparatus including the same | |
KR101671489B1 (ko) | 유기물 증발원 및 그를 포함하는 증착 장치 | |
TWI420721B (zh) | 氣相沈積源及方法 | |
US10870913B2 (en) | Processing device, sputtering device, and collimator | |
KR100645689B1 (ko) | 선형 증착원 | |
JP6526880B1 (ja) | 蒸発源及び蒸着装置 | |
JP6586535B2 (ja) | 蒸発源及び成膜装置 | |
CN107686967A (zh) | 线性蒸发源及包括线性蒸发源的沉积装置 | |
US20050211172A1 (en) | Elongated thermal physical vapor deposition source with plural apertures | |
KR20140079294A (ko) | 박막증착장치 | |
JP2015067850A (ja) | 真空蒸着装置 | |
US20110275196A1 (en) | Thermal Evaporation Sources with Separate Crucible for Holding the Evaporant Material | |
US4217856A (en) | Vacuum evaporation apparatus | |
JP4759572B2 (ja) | Rf−加熱されるプロセス室を備えたcvd反応装置 | |
KR20210151151A (ko) | 소스 배열, 증착 장치 및 소스 재료를 증착하기 위한 방법 | |
KR20130073407A (ko) | 외부 가열용기를 포함하는 고온 증발원 | |
KR20170047493A (ko) | 선형 증발 증착 장치 | |
KR101749570B1 (ko) | 유도 가열 선형 증발 증착 장치 | |
CN104711520A (zh) | 蒸发设备 | |
JP7373608B1 (ja) | 対流抑制炉 | |
JP6573814B2 (ja) | 成膜装置 | |
JP4820897B2 (ja) | ネジ | |
JPH10214772A (ja) | 基板熱処理装置 | |
KR102134866B1 (ko) | 리니어소스 및 그를 가지는 기판처리장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180629 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190628 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190724 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20191023 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191203 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200311 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200320 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6681125 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |