JP2019220516A5 - Transistors and semiconductor devices - Google Patents
Transistors and semiconductor devices Download PDFInfo
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- JP2019220516A5 JP2019220516A5 JP2018114837A JP2018114837A JP2019220516A5 JP 2019220516 A5 JP2019220516 A5 JP 2019220516A5 JP 2018114837 A JP2018114837 A JP 2018114837A JP 2018114837 A JP2018114837 A JP 2018114837A JP 2019220516 A5 JP2019220516 A5 JP 2019220516A5
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- Prior art keywords
- insulator
- transistor
- semiconductor device
- gate
- layer containing
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Claims (7)
前記トランジスタは、ゲート、ソース、及びドレインを有し、
前記酸化物半導体の下方には、第１の絶縁体が形成され、
前記ゲートと、前記酸化物半導体との間には、第２の絶縁体が形成され、
前記第１の絶縁体、及び前記第２の絶縁体のいずれか一方または双方は、
シリコンを含む層と、ガリウムを含む層と、を有する、
トランジスタ。 A transistor having an oxide semiconductor in the channel formation region.
The transistor has a gate, a source, and a drain.
A first insulator is formed below the oxide semiconductor.
A second insulator is formed between the gate and the oxide semiconductor.
One or both of the first insulator and the second insulator may be used.
It has a layer containing silicon and a layer containing gallium.
Transistor.
前記トランジスタは、第１のゲート、第２のゲート、ソース、及びドレインを有し、
前記第２のゲートと、前記酸化物半導体との間には、第１の絶縁体が形成され、
前記第１のゲートと、前記酸化物半導体との間には、第２の絶縁体が形成され、
前記第１の絶縁体、及び前記第２の絶縁体のいずれか一方または双方は、
シリコンを含む層と、ガリウムを含む層と、を有する、
トランジスタ。 A transistor having an oxide semiconductor in the channel formation region.
The transistor has a first gate, a second gate, a source, and a drain.
A first insulator is formed between the second gate and the oxide semiconductor.
A second insulator is formed between the first gate and the oxide semiconductor.
One or both of the first insulator and the second insulator may be used.
It has a layer containing silicon and a layer containing gallium.
Transistor.
容量素子と、を有する半導体装置であって、
前記容量素子は、
前記トランジスタに含まれる前記シリコンを含む層と、前記ガリウムを含む層と、を有する、半導体装置。 The transistor according to claim 1 or 2.
A semiconductor device having a capacitive element,
The capacitive element is
A semiconductor device having a layer containing the silicon contained in the transistor and a layer containing the gallium.
前記容量素子は、前記トランジスタの上方に形成される、
半導体装置。 In claim 3 ,
The capacitive element is formed above the transistor.
Semiconductor device.
前記容量素子は、前記トランジスタの下方に形成される、
半導体装置。 In claim 3 ,
The capacitive element is formed below the transistor.
Semiconductor device.
第３の絶縁体と、第４の絶縁体と、を有する半導体装置であって、
前記第３の絶縁体は、アルミニウムと、酸素と、を有し、
前記第４の絶縁体は、シリコンと、窒素と、を有し、
前記トランジスタの上面、下面、及び側面のいずれか一または複数は、
前記第３の絶縁体、及び前記第４の絶縁体によって覆われている、
半導体装置。 In any one of claims 3 to 5,
A semiconductor device having a third insulator and a fourth insulator.
The third insulator has aluminum and oxygen, and has
The fourth insulator has silicon and nitrogen, and has
One or more of the upper surface, the lower surface, and the side surface of the transistor may be
Covered by the third insulator and the fourth insulator,
Semiconductor device.
前記第３の絶縁体は、前記第４の絶縁体よりも内側に位置する、
半導体装置。
In claim 6 ,
The third insulator is located inside the fourth insulator.
Semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018114837A JP7204353B2 (en) | 2018-06-15 | 2018-06-15 | Transistors and semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018114837A JP7204353B2 (en) | 2018-06-15 | 2018-06-15 | Transistors and semiconductor devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019220516A JP2019220516A (en) | 2019-12-26 |
| JP2019220516A5 true JP2019220516A5 (en) | 2021-07-26 |
| JP7204353B2 JP7204353B2 (en) | 2023-01-16 |
Family
ID=69096976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018114837A Active JP7204353B2 (en) | 2018-06-15 | 2018-06-15 | Transistors and semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7204353B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230047805A1 (en) * | 2020-01-16 | 2023-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Method For Manufacturing Semiconductor Device |
| US12363954B2 (en) | 2020-03-20 | 2025-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| KR20250003781A (en) * | 2022-04-14 | 2025-01-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor devices and methods for manufacturing semiconductor devices |
| KR20250003634A (en) * | 2022-04-19 | 2025-01-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor devices and methods for manufacturing semiconductor devices |
| WO2024013602A1 (en) * | 2022-07-13 | 2024-01-18 | 株式会社半導体エネルギー研究所 | Transistor and transistor fabrication method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102196949B1 (en) | 2013-03-29 | 2020-12-30 | 엘지디스플레이 주식회사 | Thin film transistor, method for manufacturing the same and display device comprising the same |
| JP6717815B2 (en) | 2015-05-28 | 2020-07-08 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| US10181531B2 (en) | 2015-07-08 | 2019-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor having low parasitic capacitance |
| US9773919B2 (en) | 2015-08-26 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR20180055701A (en) | 2016-11-17 | 2018-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method of manufacturing the same |
| JP6871722B2 (en) | 2016-11-17 | 2021-05-12 | 株式会社半導体エネルギー研究所 | Semiconductor device |
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2018
- 2018-06-15 JP JP2018114837A patent/JP7204353B2/en active Active
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