JP2019140911A - Electric power conversion system - Google Patents

Abstract

An object of the present invention is to provide a power converter capable of improving vibration resistance and cooling performance. A power conversion device (1) has a semiconductor module (2) containing a semiconductor element, a cooler (4) for cooling the semiconductor module (2), and a capacitor (3) forming a power conversion circuit. It has a resin member 11 having thermal conductivity and electrical insulation, which is in close contact with the semiconductor module 2 , the capacitor 3 , and the cooler 4 . The semiconductor module 2 , the capacitor 3 , and the cooler 4 are laminated to form a laminated structure 10 . The semiconductor module 2 , the capacitor 3 , and the cooler 4 forming the laminated structure 10 are fixed to each other by a resin member 11 . The entire bus bar 5 connecting the semiconductor module 2 and the capacitor 3 is embedded in the resin member 11 . [Selection drawing] Fig. 4

Description

  The present invention relates to a power conversion device including a semiconductor module and a capacitor.

  For example, an electric vehicle, a hybrid vehicle, and the like are equipped with a power conversion device such as an inverter. As such a power conversion device, Patent Document 1 discloses a device including a semiconductor module and a capacitor electrically connected to the semiconductor module.

JP2013-233042A

  However, in the power conversion device described in Patent Document 1, a capacitor and a semiconductor module are connected at a terminal drawn from the capacitor. Therefore, when vibration is applied to the power conversion device, if the capacitor and the semiconductor module are individually vibrated and relatively displaced, a load is easily applied directly to the connection portion between the capacitor and the semiconductor module, and there is a problem of vibration resistance.

  Further, in the power conversion device described in Patent Document 1, it is conceivable that the capacitor is cooled by air cooling, but there is room for improvement from the viewpoint of improving the cooling performance of the capacitor.

  The present invention has been made in view of such a background, and an object of the present invention is to provide a power converter capable of improving vibration resistance and cooling performance.

One embodiment of the present invention is a semiconductor module including a semiconductor element;
A cooler for cooling the semiconductor module;
Electronic components other than the above-mentioned semiconductor module constituting the power conversion circuit;
A resin member having thermal conductivity and electrical insulation, in close contact with the semiconductor module, the electronic component, and the cooler;
The semiconductor module, the electronic component, and the cooler are stacked to form a stacked structure,
The semiconductor module, the electronic component, and the cooler constituting the laminated structure are fixed to each other by the resin member,
The electronic component includes a capacitor connected to the semiconductor module,
The entire bus bar connecting the semiconductor module and the capacitor is in the power conversion device embedded in the resin member.

  The power converter includes a potting material formed in close contact with a semiconductor module, a capacitor, and a cooler. Further, the semiconductor module, the capacitor, and the cooler are fixed to each other by a potting material. Therefore, it is possible to suppress the semiconductor module and the capacitor from vibrating individually. As a result, it is possible to suppress a load from being directly applied to the connection portion between the semiconductor module and the capacitor.

  Furthermore, the heat of the semiconductor module and the capacitor can be radiated to the cooler via the potting material, and the cooling performance of the semiconductor module and the capacitor can be improved.

  As described above, according to the present invention, it is possible to provide a power conversion device capable of improving vibration resistance and cooling performance.

The top view of the power converter device in the reference example 1. FIG. The II-II sectional view taken on the line of FIG. The top view of the power converter device in Example 1. FIG. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3. The top view of the power converter device in the reference example 2. FIG. The VI-VI arrow directional cross-sectional view of FIG. The top view of the power converter device in Example 2. FIG. The VIII-VIII arrow directional cross-sectional view of FIG. The top view of the power converter device in Example 3. FIG. FIG. 10 is a cross-sectional view taken along line AA in FIG. 9.

The power conversion device is, for example, an inverter device that converts DC power into AC power, and is mounted on a vehicle such as an electric vehicle or a hybrid vehicle, and converts power supply power to drive power necessary for driving a drive motor. Can be used.
The capacitor may be a smoothing capacitor or the like that is used in the power conversion device and smoothes the input voltage of the power conversion circuit.

(Reference Example 1)
A reference example of the power conversion device will be described with reference to FIGS.
As shown in FIGS. 1 and 2, the power conversion device 1 includes a semiconductor module 2 containing a semiconductor element, a capacitor 3 connected to the semiconductor module 2, and a cooler 4 for cooling the semiconductor module 2 and the capacitor 3. And a potting material 11. The potting material 11 is integrally formed in close contact with the semiconductor module 2, the capacitor 3, and the cooler 4. The semiconductor module 2, the capacitor 3, and the cooler 4 are fixed to each other by a potting material 11.

  The semiconductor module 2 is formed by resin molding a switching element such as an IGBT or a semiconductor element such as a diode such as an FWD. As shown in FIG. 2, the semiconductor module 2 is arranged with the main surface in contact with the cooler 4. The capacitor 3 can be a film capacitor formed by winding a metallized film, for example.

  As shown in FIGS. 1 and 2, the semiconductor module 2, the capacitor 3, and the cooler 4 are all embedded in the potting material 11. Thereby, the semiconductor module 2, the capacitor | condenser 3, and the cooler 4 are closely_contact | adhered to the potting material 11 formed integrally in the whole of each exposed surface, and are mutually fixed by the potting material 11. FIG. In the present specification, the exposed surface means an exposed surface in a state where the potting material 11 is not disposed. For example, the contact surfaces of the semiconductor module 2 and the cooler 4 are not exposed surfaces. The potting material 11 is made of, for example, a resin having thermal conductivity and electrical insulation such as epoxy.

  The cooler 4 has a refrigerant flow path for flowing the refrigerant therein. In the cooler 4, a refrigerant introduction portion (not shown) for introducing the refrigerant into the refrigerant flow path in the cooler 4 and the refrigerant is discharged from the refrigerant flow path in the cooler 4 to the outside of the cooler 4. A refrigerant discharge part (not shown) is provided. A pipe is connected to the refrigerant introduction part and the refrigerant discharge part so as to protrude outside the potting material 11. Thereby, the refrigerant can be introduced into the cooler 4 from the outside of the potting material 11 through the pipe, and the refrigerant can be discharged from the cooler 4 to the outside of the potting material 11.

  In addition, the power conversion device 1 includes a bus bar 5 that connects the semiconductor module 2 and the capacitor 3, and the entire bus bar 5 is embedded in the potting material 11. That is, the potting material 11 embeds the entire semiconductor module 2, capacitor 3, cooler 4, and bus bar 5.

  As shown in FIG. 2, the bus bar 5 includes a pair of power terminals 51 protruding from the semiconductor module 2 and a pair of capacitor terminals 52 in surface contact with both end faces of the capacitor 3. The power terminal 51 and the capacitor terminal 52 are connected to each other on the principal surfaces by welding or the like. The power terminal 51 and the capacitor terminal 52 are in close contact with the potting material 11 on the entire exposed surfaces.

Next, the function and effect of this example will be described.
The power conversion device 1 includes a potting material 11 formed in close contact with the semiconductor module 2, the capacitor 3, and the cooler 4. Further, the semiconductor module 2, the capacitor 3, and the cooler 4 are fixed to each other by a potting material 11. Therefore, it is possible to suppress the semiconductor module 2 and the capacitor 3 from vibrating individually. As a result, it is possible to suppress a direct load from being applied to the connection portion between the semiconductor module 2 and the capacitor 3.

  Furthermore, the heat of the semiconductor module 2 and the capacitor 3 can be dissipated to the cooler 4 via the potting material 11, and the cooling performance of the semiconductor module 2 and the capacitor 3 can be improved.

The entire bus bar 5 is embedded in the potting material 11. Therefore, the vibration resistance of the bus bar 5 can be improved. Thereby, it can suppress that a big load is applied to the junction part of the power terminal 51 and the capacitor | condenser terminal 52, for example.
Moreover, the insulation distance between the bus bar 5 and a portion (for example, the cooler 4) to be electrically insulated from the bus bar 5 can be shortened. As a result, the bus bar 5 can be shortened, and the power converter 1 can be downsized.
Moreover, since the heat of the bus bar 5 can be radiated to the cooler 4 through the potting material 11, the heat dissipation of the bus bar 5 can be improved.

  Further, the entire capacitor 3 is embedded in the potting material 11. Therefore, the moisture resistance of the capacitor 3 can be ensured. Further, since the heat of the capacitor 3 can be radiated from the entire surface to the cooler 4 via the potting material 11, the heat dissipation of the capacitor 3 can be improved.

  Further, the semiconductor module 2, the capacitor 3, and the cooler 4 are all embedded in the potting material 11. Therefore, the semiconductor module 2 and the capacitor 3 are firmly held by the potting material 11, and it is possible to further suppress the two from vibrating individually. Further, since the heat of the capacitor 3 can be radiated from the entire surface to the cooler 4 via the potting material 11, the heat dissipation of the capacitor 3 can be improved.

  As described above, according to this example, it is possible to provide a power conversion device that can improve vibration resistance and cooling performance.

Example 1
In this example, as shown in FIG. 3 and FIG. 4, the cooler 4 includes a plurality of cooling pipes 41, and the plurality of cooling pipes 41 are stacked together with electronic components constituting a power conversion circuit. This is an example of configuration. In this example, an example of a power conversion device 1 having a semiconductor module 2 and a capacitor 3 as electronic components constituting the laminated structure 10 is shown. Further, in this example, the entire laminated structure 10 is embedded in the potting material 11. In the following, the stacking direction in the stacked structure 10 is simply referred to as the stacking direction X. Further, the longitudinal direction of the cooling pipe 41 is referred to as the width direction Y as appropriate.

  The cooler 4 is formed by stacking a plurality of cooling pipes 41 and connected to each other by connecting pipes 42 in the vicinity of both ends in the longitudinal direction (width direction Y).

  The laminated structure 10 is formed by disposing the semiconductor module 2 and the capacitor 3 in a plurality of gaps provided between the plurality of cooling pipes 41 in the cooler 4. The plurality of semiconductor modules 2 are arranged between the cooling pipes 41 so that the normal direction of the main surface coincides with the stacking direction X. Further, the laminated structure 10 is configured by disposing the capacitor 3 in a gap at one end in the stacking direction X among the gaps between adjacent cooling pipes 41 in the cooler 4. The semiconductor module 2 and the capacitor 3 are sandwiched by cooling pipes 41 from both sides in the stacking direction X, respectively.

  The entire laminated structure 10 is embedded in the potting material 11. Thereby, the semiconductor module 2, the capacitor 3, and the cooler 4 are entirely embedded in the potting material 11.

  A cooling pipe 41 disposed at one end in the stacking direction X of the cooler 4 includes a refrigerant introduction part (not shown) for introducing the refrigerant into the cooler 4 and a refrigerant discharge part (not shown) for discharging the refrigerant from the cooler 4. ) And are provided. A pipe is connected to the refrigerant introduction part and the refrigerant discharge part so as to protrude outside the potting material 11. Thereby, the refrigerant can be introduced into the cooler 4 from the outside of the potting material 11 through the pipe, and the refrigerant can be discharged from the cooler 4 to the outside of the potting material 11.

  Similar to the reference example 1, the power conversion device 1 includes a bus bar 5 that connects the semiconductor module 2 and the capacitor 3, and the entire bus bar 5 is embedded in the potting material 11. That is, the potting material 11 embeds the entire semiconductor module 2, capacitor 3, cooler 4, and bus bar 5.

  As shown in FIG. 4, the bus bar 5 includes a power terminal 51, a capacitor terminal 52, and an intermediate bus bar 53. The intermediate bus bar 53 has a flat plate shape formed in the stacking direction X. The intermediate bus bar 53 is connected to the power terminal 51 on one side in the stacking direction X by welding or the like, and is connected to the capacitor terminal 52 on the other side by welding or the like. The intermediate bus bar 53 is connected to the power terminal 51 and the capacitor terminal 52 on the main surfaces of each other by welding or the like. The power terminal 51, the capacitor terminal 52, and the intermediate bus bar 53 are in close contact with the potting material 11 over the entire exposed surfaces.

  Others are the same as in Reference Example 1. Of the reference numerals used in this example or the drawings relating to this example, the same reference numerals as those used in Reference Example 1 represent the same components as in Reference Example 1 unless otherwise indicated.

In this example, since the entire laminated structure 10 is embedded in the potting material 11, vibration generated in the laminated structure 10 can be absorbed by the potting material 11, and the vibration resistance of the power conversion device 1 can be improved. Can be planned.
In addition, the same effects as those of Reference Example 1 are obtained.

(Example 3)
This example is a modification of the reference example 1 as shown in FIGS. That is, this example is an example in which the power conversion device 1 includes the control circuit board 6 that controls the switching operation of the semiconductor module 2. In this example, the entire control circuit board 6 is embedded in the potting material 11. That is, the potting material 11 embeds the entire semiconductor module 2, capacitor 3, cooler 4, bus bar 5, and control circuit board 6.

  As shown in FIG. 6, a plurality of control terminals 7 that connect the semiconductor module 2 to the control circuit board 6 protrude on the side opposite to the protruding side of the power terminal 51 in the semiconductor module 2. A plurality of control terminals 7 are inserted into a plurality of through holes 60 formed in the control circuit board 6 and connected by solder or the like.

  As shown in FIGS. 6 and 7, the control circuit board 6 is in close contact with the potting material 11 over the entire exposed surface. In this example, the entire control terminal 7 is also embedded in the potting material 11.

  Others are the same as in Reference Example 1. Of the reference numerals used in this example or the drawings relating to this example, the same reference numerals as those used in Reference Example 1 represent the same components as in Reference Example 1 unless otherwise indicated.

  In this example, it is possible to suppress the semiconductor module 2, the capacitor 3, and the control circuit board 6 from vibrating individually. As a result, it is possible to suppress a direct load from being applied to the connection portion between the semiconductor module 2 and the control circuit board 6. That is, it is possible to suppress the stress from acting on the joint portion (solder portion) between the control terminal 7 and the through hole 60 and the control terminal 7 itself. In addition, the vibration resistance of the electronic component placed on the control circuit board 6 can be improved.

  Further, since the insulation distance between circuit components placed on the control circuit board 6 can be shortened, the control circuit board 6 itself can be downsized. In addition, since the insulation distance between the control circuit board 6 and the portion that should be electrically insulated from the control circuit board 6 can be shortened, the degree of freedom in the location of the control circuit board 6 can be increased. As a result, the power converter 1 can be downsized.

Moreover, since the heat of the control circuit board 6 can be radiated to the cooler 4 through the potting material 11, the heat dissipation of the control circuit board 6 can be improved.
In addition, the same effects as those of Reference Example 1 are obtained.

(Example 2)
This example is a modification of the first embodiment as shown in FIGS. This example is also an example in which the power conversion device 1 includes the control circuit board 6 that controls the switching operation of the semiconductor module 2, as in the second reference example. Also in this example, the entire control circuit board 6 is embedded in the potting material 11. That is, the potting material 11 embeds the entire semiconductor module 2, capacitor 3, cooler 4, bus bar 5, and control circuit board 6. The control circuit board 6 is formed to extend in the stacking direction X and the width direction Y.

  As shown in FIG. 8, a plurality of control terminals 7 that connect the semiconductor module 2 to the control circuit board 6 protrude on the opposite side of the semiconductor module 2 from the protruding side of the power terminal 51. A plurality of control terminals 7 are connected to a plurality of through holes 60 formed in the control circuit board 6.

  As shown in FIGS. 7 and 8, the control circuit board 6 is in close contact with the potting material 11 over the entire exposed surface. In this example, the entire control terminal 7 is also embedded in the potting material 11.

Others are the same as in the first embodiment. Of the reference numerals used in this example or the drawings relating to this example, the same reference numerals as those used in the first embodiment denote the same components as in the first embodiment unless otherwise specified.
Also in this example, the same operational effects as those of Example 1 and Reference Example 2 can be achieved.

(Example 3)
This example is also a modification of the first embodiment as shown in FIGS. That is, this example is an example having a reactor 8 as an electronic component constituting the laminated structure 10 in addition to the semiconductor module 2 and the capacitor 3. Reactor 8 constitutes a booster circuit that boosts the power supply voltage.

  The laminated structure 10 is configured by disposing the semiconductor module 2, the capacitor 3, and the reactor 8 in a plurality of gaps provided between the plurality of cooling pipes 41 in the cooler 4. The laminated structure 10 has a capacitor 3 arranged in one gap in the lamination direction X among the gaps between the cooling pipes 41 in the cooler 4, and a reactor 8 arranged in the gap in the other end in the lamination direction X. It becomes. The semiconductor module 2, the capacitor 3, and the reactor 8 are sandwiched by cooling pipes 41 from both sides in the stacking direction X, respectively.

  The entire laminated structure 10 including the cooling pipe 41, the semiconductor module 2, the capacitor 3, and the reactor 8 is embedded in the potting material 11.

  Others are the same as in the first embodiment. Of the reference numerals used in this example or the drawings relating to this example, the same reference numerals as those used in the first embodiment denote the same components as in the first embodiment unless otherwise specified.

In this example, since the electronic component constituting the laminated structure 10 includes the semiconductor module 2, the capacitor 3, and the reactor 8, the size of the laminated structure 10 in the lamination direction X tends to be large, and vibration resistance is a problem. Tend to occur. Therefore, by embedding the entire laminated structure 10 with the potting material 11, the effect of improving the vibration resistance of the power converter 1 can be further obtained.
In addition, the same effects as those of the first embodiment are obtained.

  In addition, in the said Example 1, 2, 3, about the arrangement | positioning position of the electronic components (a semiconductor module, a capacitor | condenser, a reactor, etc.) which comprise the power converter circuit in a laminated structure, it is not restricted to the thing of the said Example, Various Can be changed.

DESCRIPTION OF SYMBOLS 1 Power converter 11 Potting material 2 Semiconductor module 3 Capacitor 4 Cooler

Claims (5)

A semiconductor module (2) incorporating a semiconductor element;
A cooler (4) for cooling the semiconductor module (2);
Electronic components (3, 8) other than the semiconductor module (2) constituting the power conversion circuit;
A resin member (11) having thermal conductivity and electrical insulation, in close contact with the semiconductor module (2), the electronic component (3, 8), and the cooler (4);
The semiconductor module (2), the electronic component (3, 8), and the cooler (4) are stacked to form a stacked structure (10).
The semiconductor module (2), the electronic components (3, 8) and the cooler (4) constituting the laminated structure (10) are fixed to each other by the resin member (11),
The electronic component (3, 8) includes a capacitor (3) connected to the semiconductor module (2),
The entire bus bar (5) connecting the semiconductor module (2) and the capacitor (3) is a power conversion device (1) embedded in the resin member (11).   The power converter (1) according to claim 1, wherein the entire laminated structure (10) is embedded in the resin member (11).   The power converter (1) has a control circuit board (6) for controlling the switching operation of the semiconductor module (2), and the entire control circuit board (6) is embedded in the resin member (11). The power converter device (1) according to claim 1 or 2.   The power converter device (1) according to any one of claims 1 to 3, wherein the entire capacitor (3) is embedded in the resin member (11).   The power conversion device (1) according to claim 4, wherein the semiconductor module (2), the capacitor (3), and the cooler (4) are entirely embedded in the resin member (11). .

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