JP2018509778A5 - - Google Patents

Claims (20)

An annealing system for annealing a target substrate,
A uniform microwave field generator configured to generate a uniform microwave field;
Two plates disposed inside the uniform microwave field generator spaced apart and arranged in a direction to form a capacitive effect between themselves inside the uniform microwave field;
Rotating the two plates and the target substrate within the uniform microwave field thereby creating a periodic change in the polarity of the microwave applied from the uniform microwave field to the target substrate. An annealing system comprising: a turntable device configured as described above. The two plates are annealed system according to claim 1 which is doped so as to respond to the uniform microwave field generated by the uniform microwave field generator. Further comprising a support element comprising an insulator material, the support element, with said turntable device to the two plates, according to claim 1 or 2 for holding the two plates parallel to each other Annealing system. 4. An annealing system according to claim 3, wherein at least one of the support elements is configured to fix the target substrate between the two plates in parallel to the two plates. 5. An annealing system according to claim 3 or 4 , wherein the support element is selectively adjustable so that the distance between the two plates is adjustable. The annealing system according to any one of claims 1 to 5, wherein the two plates are arranged with an interval of 0.5 mm to 10 mm. Eddy currents in said uniform microwave field, the response to the periodic change in the polarity by flowing at right angles to the two plates, according to claim 1-6 result in uniform heating of the target substrate An annealing system according to any one of the above. Said two plates, one of claims 1 to 7 having heat resistance high enough conductivity to form an electric field in said uniform microwave field, and from Celsius 4 00 degrees to 800 degrees The annealing system according to item 1 . The homogeneous microwave field generator according to claim 1-8 is a wave guide port, which is configured to form the chamber of the single-mode or multi-mode, or the uniform microwave field around the two plates An annealing system according to any one of the above. The annealing system according to any one of claims 1 to 9, wherein the uniform microwave field generator generates a frequency in a range from 900 MHz to 26 GHz. The two plates, respectively, and a semiconductor layer and a susceptor layer, the two plates are any one of claims 1 to 10, wherein the susceptor layer is located toward the direction that face each other Annealing system according to item . The annealing system according to any one of claims 1 to 11, wherein each of the two plates includes a semiconductor material or a conductor material configured so that conductivity increases with an increase in temperature. A method for annealing a semiconductor material comprising:
A target substrate containing the semiconductor material is placed between two plates inside a uniform microwave field,
Creating a periodic change in the polarity of the microwave applied to the target substrate from the uniform microwave field;
The periodic change results in a flow of eddy currents perpendicular to the target substrate and the two plates.   The step of creating the periodic change comprises rotating the two plates and the target substrate within the uniform microwave field, and as a result, a period of polarity of the microwave applied to the target substrate. The method of claim 13, comprising generating a change in state. Furthermore, doping the two plates before placing the target substrate between the two plates, the doping being sufficient to react the two plates to the uniform microwave field. The method according to claim 13 or 14 . The target substrate A method according to any one of claims 13 to 15 comprising the semiconductor material doped with impurities. 17. The method according to claim 13, further comprising adjusting a distance between the two plates based on at least one of the two plates and a shape and material used for the target substrate . 2. The method according to item 1 . 18. A method according to any one of claims 13 to 17, wherein the uniform microwave field comprises a frequency in the range from 900 MHz to 26 GHz. A method for annealing a semiconductor material comprising:
Doping a parallel plate, the doping being sufficient to react the parallel plate to a uniform microwave field;
Placing a target substrate between the parallel plates inside the uniform microwave field;
Rotating the parallel plate and the target substrate within the uniform microwave field, thereby creating a periodic change in the polarity of the microwave applied from the uniform microwave field to the target substrate. Including
The target substrate includes the semiconductor material doped with impurities;
The uniform microwave field includes frequencies in the range of 900 MHz to 26 GHz;
The parallel plates are spaced sufficiently close to each other to form a capacitive effect between the parallel plates inside the uniform microwave field;
The periodic change results in eddy current flow perpendicular to the target substrate and the parallel plates, resulting in uniform heating of the target substrate, and selectively heating defects in the target substrate.   20. The method of claim 19, wherein the rotation is performed at a speed in a range from 1 revolution per minute to 10 revolutions per minute.