JP2018205236A - Magnetic sensor - Google Patents

Abstract

To provide a magnetic sensor having a configuration with which it is possible to suppress a fluctuation of sensor output due to stresses occurring to a substrate.SOLUTION: A third magnetoresistive element 269 outputs a third magnetic signal that includes a third stress to cancel out a first stress occurring due to an arranged position on a semiconductor substrate 242 and included in a first magnetic signal. A fourth magnetoresistive element 270 outputs a fourth magnetic signal that includes a fourth stress to cancel out a second stress occurring due to an arranged position on the semiconductor substrate 242 and included in a second magnetic signal. Thus, it is possible to completely cancel out the first stress and second stress from the first magnetic signal and second magnetic signal. Therefore, it is possible to completely suppress a fluctuation of sensor output due to stresses occurring to the semiconductor substrate 242.SELECTED DRAWING: Figure 5

Description

  The present invention relates to a magnetic sensor.

  Conventionally, a magnetic signal is output from the middle point of a pair of magnetoresistive elements based on a change in the resistance value of the pair of magnetoresistive elements when the pair of magnetoresistive elements is affected by a magnetic field. A magnetic sensor is proposed in Patent Document 1, for example.

  In this magnetic sensor, one magnetoresistive element of the pair of magnetoresistive elements is configured by connecting a plurality of first resistor portions in series, and the other magnetoresistive element is configured by connecting a plurality of second resistor portions in series. It is configured. In addition, a first layout unit in which a part of each first resistor unit and a part of each second resistor unit are laid out in a predetermined arrangement, and each of the first resistor unit and each second resistor unit The other resistance portion is divided into a second layout portion laid out in the same arrangement as the first layout portion.

  The first layout portion is disposed at a corner portion on one surface of the substrate, while the second layout portion is disposed at a position farther from the corner portion than the first layout portion on one surface of the substrate. Thereby, since the stress which the 1st layout part receives in the corner of one side of a substrate is distributed to the 2nd layout part away from the corner, the change of the sensor output by stress is controlled.

Japanese Patent Laying-Open No. 2015-7551

  However, in the above conventional technique, although the stress applied to each resistance portion is dispersed by defining the arrangement of each layout portion, the stress itself is applied to each resistance portion. Has not been removed. For this reason, for example, the sensor output may fluctuate due to the influence of the stress generated on the substrate, such as when the substrate is affected by heat and thermal stress is generated on the substrate.

  An object of the present invention is to provide a magnetic sensor having a configuration capable of suppressing fluctuations in sensor output due to stress generated on a substrate.

  In order to achieve the above object, according to the first aspect of the present invention, the magnetic sensor has one surface (240) corresponding to the XY plane and a side surface (241) corresponding to the Z plane perpendicular to the one surface. A substrate (242) is provided.

  The magnetic sensor is disposed on one surface and includes a first magnetic component including a first stress component generated due to a position disposed on the one surface based on a change in resistance value when affected by a magnetic field from the outside. A first magnetoresistive element (261) for outputting a signal is provided.

  In addition, the magnetic sensor is disposed on one surface and includes a second stress component generated due to a position disposed on the one surface based on a change in resistance value when affected by a magnetic field from the outside. A second magnetoresistive element (262) that outputs two magnetic signals is provided.

  Further, the magnetic sensor is arranged on one side or the side surface, and is generated due to a position arranged on the one side or the side surface based on a change in resistance value when affected by a magnetic field from the outside, and the first stress and A canceling magnetoresistive element (269, 270) that outputs a canceling magnetic signal including a canceling stress component that cancels the second stress is provided.

  According to this, since the canceling magnetic signal output from the canceling magnetoresistive element includes a canceling stress component that cancels the first stress and the second stress, the first stress and the second magnetic signal are used to cancel the first stress and the second magnetic signal. Two stress components can be completely cancelled. Therefore, fluctuations in sensor output due to stress generated on the substrate can be completely suppressed.

  In addition, the code | symbol in the bracket | parenthesis of each means described in this column and the claim shows the correspondence with the specific means as described in embodiment mentioned later.

It is the figure which showed the arrangement | positioning relationship between the magnetic sensor which concerns on 1st Embodiment of this invention, and a signal rotor. It is sectional drawing of a sensor chip. It is sectional drawing of sensor IC. It is the figure which showed the circuit structure of the magnetic sensor. It is the figure which showed each magnetoresistive element arrange | positioned on one surface of a semiconductor substrate. It is the figure which showed the relationship between the electric current direction in a XY plane, and a magnetic field direction. It is the figure which showed the change of the resistivity based on the crossing angle of each direction shown by FIG. In 2nd Embodiment, it is the figure which showed the relationship between the magnetic field direction when a 3rd magnetoresistive element and a 4th magnetoresistive element are arrange | positioned at the YZ plane of a semiconductor substrate, and an electric current direction. It is the figure which showed the change of the resistivity based on the crossing angle of each direction shown by FIG. In 3rd Embodiment, it is the figure which showed the relationship between the magnetic field direction when a 3rd magnetoresistive element and a 4th magnetoresistive element are arrange | positioned at the ZX plane of a semiconductor substrate, and an electric current direction. It is the figure which showed the change of the resistivity based on the crossing angle of each direction shown by FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same or equivalent parts are denoted by the same reference numerals in the drawings.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. The magnetic sensor according to the present embodiment is used, for example, for detecting the crank angle of an internal combustion engine. As shown in FIG. 1, a magnetic sensor 200 is disposed so as to face an outer peripheral portion 110 of a disk-like rotor 100 fixed to a crankshaft of an engine that is an internal combustion engine. A plurality of protrusions 120 are provided at equal intervals on the outer peripheral portion 110 of the rotor 100. The rotor 100 is a so-called gear. In FIG. 1, a part of the rotor 100 is shown.

  The magnetic sensor 200 includes a bias magnet 210, a sensor unit 220 disposed at a predetermined position with respect to the bias magnet 210, and a resin case 230 that houses the bias magnet 210 and the sensor unit 220. Has been. The bias magnet 210 serves to increase the magnetic field detection sensitivity of the magnetic sensor 200 by a certain amount. The sensor unit 220 is configured to output a pulse-like output signal corresponding to the position of the outer peripheral portion 110, that is, the crank angle as the rotor 100 rotates.

  As shown in FIG. 2, the sensor unit 220 includes a terminal lead 221, an IC chip 222, a mold resin unit 223, and a connector lead 224. Among these, the terminal lead 221 is a terminal component for electrically connecting the IC chip 222 and the outside.

  The IC chip 222 is a semiconductor component that is fixed to the terminal lead 221 via the adhesive 225 and has a sensing unit that detects a change in magnetic field as the rotor 100 rotates. The IC chip 222 is electrically connected to the terminal lead 221 through the wire 226.

  The mold resin portion 223 is a sealing component that seals the terminal lead 221, the IC chip 222, and the wire 226 so that one end portion of the terminal lead 221 is exposed. The connector lead 224 is a connector part that is connected to the tip of the terminal lead 221 exposed from the mold resin portion 223 and is connected to an external connector (not shown).

  As shown in FIG. 3, the IC chip 222 has a plate-like semiconductor substrate 242 having one surface 240 and side surfaces 241. One surface 240 of the semiconductor substrate 242 has a quadrangular planar shape.

  Further, the IC chip 222 has an insulating film 243 formed on one surface 240 of the semiconductor substrate 242 and a magnetoresistive element film 244 formed on the insulating film 243. The magnetoresistive element film 244 is a film constituting a magnetoresistive element to be described later, and is a film configured such that the resistance value changes when affected by a magnetic field. Further, the IC chip 222 has an electrode 245 formed on the magnetoresistive element film 244 and a protective film 246 that covers the magnetoresistive element film 244 and the electrode 245 so that a part of the electrode 245 is exposed. ing.

  As shown in FIG. 4, a circuit for detecting the rotation angle of the rotor 100 is formed on the insulating film 243 of the IC chip 222 and on the semiconductor substrate 242. Specifically, a sensing unit 260 that detects a change in an external magnetic field is connected between a power supply terminal 250 to which a power supply (VCC) is applied and a ground 251 connected to a ground potential (GND).

  The sensing unit 260 includes a first half bridge circuit configured by the first magnetoresistive element 261 and a second half bridge circuit configured by the second magnetoresistive element 262.

  In the first magnetoresistive element 261, a first resistor 263 and a second resistor 264 are connected in series. In the second magnetoresistive element 262, a third resistor 265 and a fourth resistor 266 are connected in series. A full bridge circuit is constituted by the first and second half bridge circuits. The voltage (V1) at the first midpoint 267 of the first half-bridge circuit is output to the arithmetic unit 252 as the first magnetic signal, and the voltage (V2) at the second midpoint 268 of the second half-bridge circuit is the second magnetic signal. Is output to the calculation unit 252. The first magnetoresistive element 261 and the second magnetoresistive element 262 are elements for detecting the position of the protrusion 120 of the rotor 100.

  In addition, the sensing unit 260 includes a third half bridge circuit configured by the third magnetoresistive element 269 and a fourth half bridge circuit configured by the fourth magnetoresistive element 270. In the third magnetoresistive element 269, a fifth resistor 271 and a sixth resistor 272 are connected in series. In the fourth magnetoresistive element 270, a seventh resistor 273 and an eighth resistor 274 are connected in series. A full bridge circuit is configured by the third and fourth half bridge circuits.

  The voltage (V3) at the third midpoint 275 of the third half-bridge circuit is output to the arithmetic unit 252 as the third magnetic signal, and the voltage (V4) at the fourth midpoint 276 of the fourth half-bridge circuit is the fourth magnetic signal. Is output to the calculation unit 252. The third magnetoresistive element 269 and the fourth magnetoresistive element 270 are elements that output a magnetic signal for canceling the stress component received by the first magnetoresistive element 261 and the second magnetoresistive element 262.

  In addition, each resistance part 263-266, 271-274 is comprised by the serial connection of two resistances, respectively. Of course, each of the resistance units 263 to 266 and 271 to 274 may be constituted by one resistor, or may be constituted by a series connection of three or more resistors.

  The arithmetic unit 252 is an arithmetic circuit unit that performs signal processing on each magnetic signal input from each of the midpoints 267, 268, 275, and 276. The reference potential of the calculation unit 252 is adjusted by the resistance values of the first resistor 253a and the second resistor 253b connected in series between the power supply terminal 250 and the ground 251.

  The output terminal of the calculation unit 252 is connected to the comparator 254. The comparator 254 is a comparison circuit unit that generates an angle signal corresponding to the movement of the rotor 100 by comparing the amplitude of the magnetic signal subjected to signal processing by the arithmetic unit 252 with a threshold value. The threshold value is for determining the presence or absence of the protrusion 120 of the rotor 100, and is set by the resistance values of the third resistor 255a and the fourth resistor 255b connected between the power supply terminal 250 and the ground 251. .

  The output terminal of the comparator 254 is connected to the base of the transistor 256. The collector of the transistor 256 is connected to the output terminal 258 via the fifth resistor 257. The emitter of the transistor 256 is connected to the ground 251.

  Next, a specific arrangement of the magnetoresistive elements 261, 262, 269, and 270 of the sensing unit 260 will be described. First, as shown in FIG. 5, the semiconductor substrate 242 has one surface 240 corresponding to the XY plane and a side surface 241 corresponding to the Z plane perpendicular to the one surface 240. In the present embodiment, all the magnetoresistive elements 261, 262, 269, and 270 are disposed on the one surface 240 of the semiconductor substrate 242.

  Here, the case where the semiconductor substrate 242 is disposed on the one surface 240 includes the case where the semiconductor substrate 242 is disposed directly on the one surface 240 and the case where the semiconductor substrate 242 is disposed on another thin film or layer such as the insulating film 243 formed on the one surface 240. Including both cases. Actually, each of the magnetoresistive elements 261, 262, 269, and 270 is formed on the insulating film 243, but is simply disposed on the one surface 240 of the semiconductor substrate 242 in the sense that it is disposed on the XY plane. It expresses that it is. The same applies when the magnetoresistive elements 261, 262, 269, and 270 are arranged on the side surface 241.

  The first half bridge circuit constituting the first magnetoresistive element 261 is disposed at the first corner 240 a of the one surface 240 of the semiconductor substrate 242. The second half bridge circuit that constitutes the second magnetoresistive element 262 is disposed at the second corner 240 b of the one surface 240 of the semiconductor substrate 242. The first corner portion 240a and the second corner portion 240b are two corners of a portion of the semiconductor substrate 242 that faces the rotor 100 when the magnetic sensor 200 is disposed opposite to the rotor 100 as shown in FIG. Part.

  On the other hand, as shown in FIG. 5, the third half bridge circuit constituting the third magnetoresistive element 269 is disposed at the third corner 240 c of the one surface 240 of the semiconductor substrate 242. Further, the fourth half bridge circuit constituting the fourth magnetoresistive element 270 is disposed at the fourth corner 240 d of the one surface 240 of the semiconductor substrate 242. The third corner portion 240c and the fourth corner portion 240d are two corner portions that are further away from the rotor 100 than the first corner portion 240a and the second corner portion 240b.

  The resistance portions 263 to 266 and 271 to 274 of the magnetoresistive elements 261, 262, 269, and 270 are laid out linearly along one direction in the surface direction of the one surface 240 of the semiconductor substrate 242. Here, linear refers to the form of the main wiring portion of each of the resistance portions 263 to 266 and 271 to 274, and a plurality of linear portions along one direction are connected in a wave shape as shown in FIG. As a result, one resistance portion is configured. The easy axis of each of the magnetoresistive elements 261, 262, 269, and 270 is the extending direction of the linear portion of the wiring, that is, the direction in which the current flows.

  In the present embodiment, the magnetic field is applied in parallel to one surface 240 (XY plane) of the semiconductor substrate 242. Therefore, the direction of the magnetic field applied to the sensing unit 260 changes in the XY plane as the rotor 100 rotates. The main straight line portions of the wiring constituting the resistance portions 263 and 264 of the first magnetoresistive element 261 and the resistance portions 265 and 266 of the second magnetoresistive element 262 are 45 degrees or 135 degrees with respect to the Y direction. It is tilted and arranged.

  On the other hand, the main straight line portions of the wirings constituting the resistance portions 271 and 272 of the third magnetoresistive element 269 and the resistance portions 273 and 274 of the fourth magnetoresistive element 270 are portions orthogonal to the portions parallel to the Y direction. It is laid out in a line including both directions. That is, the straight line portion is arranged to be inclined at 0 degree, 90 degrees, or 180 degrees with respect to the Y direction.

  The straight line portion may not be a layout in which both a portion parallel to the Y direction and a portion parallel to the X direction are mixed, but may be a layout of only a portion parallel to the Y direction, or a layout of only a portion orthogonal to the Y direction. But it ’s okay.

  As shown in FIG. 6, in the one surface 240 of the semiconductor substrate 242, that is, the XY plane, when the direction of the current flowing through each of the magnetoresistive elements 261, 262, 269, and 270 intersects the direction of the magnetic field, FIG. As shown, the resistivity of each magnetoresistive element 261, 262, 269, 270 varies depending on the crossing angle.

  When the current direction is tilted at 45 degrees or 135 degrees with respect to the magnetic field direction as in the first magnetoresistive element 261 and the second magnetoresistive element 262, the change in resistivity is large before and after these angles. Therefore, the first magnetoresistive element 261 and the second magnetoresistive element 262 can easily detect a change in the magnetic field.

  On the other hand, the current direction of the third magnetoresistive element 269 and the fourth magnetoresistive element 270 is tilted at 0 degrees, 90 degrees, or 180 degrees with respect to the magnetic field direction. In the case of this angle, the change in resistivity can be reduced as shown by the broken line in FIG. The third magnetoresistive element 269 and the fourth magnetoresistive element 270 are elements that output a signal for canceling the stress received by the first magnetoresistive element 261 and the second magnetoresistive element 262, and reduce the change in resistivity. Thus, it is possible to make it difficult to affect the resistivity change component included in the first magnetic signal and the second magnetic signal.

  With the above arrangement, each of the magnetoresistive elements 261, 262, 269, and 270 includes a stress component generated due to the arrangement position based on a change in resistance value when affected by a magnetic field from the outside. Outputs a magnetic signal. Specifically, the first magnetoresistive element 261 outputs a first magnetic signal including a first stress component generated due to the position of the first corner 240a. The second magnetoresistive element 262 outputs a second magnetic signal including a second stress component generated due to the second corner portion 240b.

  On the other hand, the third magnetoresistive element 269 outputs a third magnetic signal that is generated due to the position of the third corner portion 240c and includes a third stress component that cancels the first stress. The fourth magnetoresistive element 270 outputs a fourth magnetic signal that is generated due to the position of the fourth corner 240d and includes a fourth stress component that cancels the second stress. That is, the third corner 240c generates a stress that cancels the stress generated in the first corner 240a, and the fourth corner 240d generates a stress that cancels the stress generated in the second corner 240b.

  The stress relationship between the first corner portion 240a and the third corner portion 240c and the stress relationship between the second corner portion 240b and the fourth corner portion 240d are examples. For example, the first stress generated in the first corner 240a and the fourth stress generated in the fourth corner 240d may be canceled out. Therefore, each magnetoresistive element 261,262,269,270 should just be arrange | positioned so that stress may be canceled according to the distribution of the stress which generate | occur | produces in the board | substrate with which each magnetoresistive element 261,262,269,270 is arrange | positioned. . The stress includes not only residual stress but also other stress such as thermal stress generated in the semiconductor substrate 242. The above is the configuration of the magnetic sensor 200 according to the present embodiment.

  Next, the magnetic detection operation of the magnetic sensor 200 will be described. First, when the rotor 100 rotates, the magnetoresistive elements 261, 262, 269 and 270 are affected by the magnetic field generated by the protrusions 120. In addition, each of the magnetoresistive elements 261, 262, 269, and 270 is affected by the stress caused by the position where it is disposed on the semiconductor substrate 242. For this reason, based on the change of the resistance value of each magnetoresistive element 261,262,269,270, voltage V1-V4 of each middle point 267,268,275,276 of the sensing part 260 changes.

  Specifically, the first magnetoresistive element 261 outputs a first magnetic signal (V1) including a magnetoresistive change (MRE1) and a first stress (C1) component. The second magnetoresistive element 262 outputs a second magnetic signal (V2) including components of change in magnetic resistance (MRE2) and second stress (C2).

  The third magnetoresistive element 269 outputs a third magnetic signal (V3) that includes components of a change in magnetic resistance (MRE3) and a third stress (C1). The fourth magnetoresistive element 270 outputs a fourth magnetic signal (V4) including components of a change in magnetic resistance (MRE4) and a fourth stress (C2).

  Subsequently, the calculation unit 252 performs signal processing on each magnetic signal input from the sensing unit 260. That is, the calculation unit 252 cancels the stress included in the first magnetic signal and the second magnetic signal while calculating the differential amplification between the first magnetic signal and the second magnetic signal.

  Specifically, the differential amplification between the first magnetic signal and the second magnetic signal is MRE1-MRE2 + (C1 + C2). Note that the amplification component is omitted. The calculation of the third magnetic signal (V3) and the fourth magnetic signal (V4) is MRE3 + MRE4 + (C1 + C2). Therefore, MRE1-MRE2 + (C1 + C2)-{MRE3 + MRE4 + (C1 + C2)} = MRE1-MRE2- {MRE3 + MRE4}, and the first stress (C1) and the second stress (C2) included in the first magnetic signal and the second magnetic signal. Is completely canceled, and a magnetic signal including only the resistance change component is obtained.

  As described above, since the third magnetoresistive element 269 and the fourth magnetoresistive element 270 are arranged so that the change in resistivity is small, the component (MRE3 + MRE4) can be reduced. For this reason, the main (MRE1-MRE2) components can be obtained to the maximum.

  The cancellation of stress can be simply explained as follows. That is, the signal from the first magnetoresistive element 261 and the second magnetoresistive element 262 is (MRE1-MRE2 + stress fluctuation). Further, the signal from the third magnetoresistive element 269 and the fourth magnetoresistive element 270 is (MRE3-MRE4 + stress fluctuation). Therefore, the stress fluctuation can be canceled by taking the differential of each signal. That is, (MRE1-MRE2) + (MRE3-MRE4).

  After performing the above calculation, the calculation unit 252 outputs a magnetic signal with the stress canceled to the comparator 254. The comparator 254 compares the amplitude of the magnetic signal with a threshold value, and outputs a Hi / Lo angle signal to the transistor 256. Accordingly, the transistor 256 is turned ON / OFF according to the Hi / Lo of the angle signal input from the comparator 254, thereby outputting a Hi / Lo output signal from the output terminal 258.

  As described above, in the present embodiment, the third magnetoresistive element 269 and the fourth magnetoresistive element 270 for canceling the components of the first stress and the second stress included in the first magnetic signal and the second magnetic signal. Is provided in the sensing unit 260. Thereby, the components of the first stress and the second stress can be completely canceled from the first magnetic signal and the second magnetic signal. Therefore, variations in sensor output due to stress generated in the semiconductor substrate 242 can be completely suppressed.

  In this embodiment, by allowing internal stress to the IC chip 222 provided with the magnetoresistive elements 261, 262, 269, and 270, and changing the arrangement of the magnetoresistive elements 261, 262, 269, and 270, The feature is that offset fluctuation due to stress can be completely canceled. Thus, if the influence of stress can be completely removed, characteristic variation due to thermal stress at high temperature can be ignored, and the magnetic sensor 200 that operates regardless of temperature can be provided. If the stress component can be canceled, the size of the IC chip 222 can be increased without reducing the size, and workability can be improved.

  Moreover, since fluctuations in the sensor output are completely suppressed, the magnetic signal is not offset with respect to the threshold value. For this reason, the timing at which the magnetic signal exceeds the threshold value does not shift to the advance side or the retard side. That is, there is no drop in the valley margin of the magnetic signal. Therefore, there is no reduction in reliability such as missing pulses.

  The correspondence between the description of the present embodiment and the description of the claims is that the semiconductor substrate 242 corresponds to the “substrate” in the claims, and the third magnetoresistive element 269 and the fourth magnetoresistive element 270. Corresponds to the “cancellation magnetoresistive element” in the claims. Further, the third magnetic signal and the fourth magnetic signal correspond to the “cancellation magnetic signal” in the claims, and the third stress and the fourth stress correspond to the “cancellation stress” in the claims.

(Second Embodiment)
In the present embodiment, parts different from the first embodiment will be described. In the present embodiment, the third magnetoresistive element 269 and the fourth magnetoresistive element 270 are arranged on the surface constituting the YZ plane of the side surface 241 of the semiconductor substrate 242. Note that the first magnetoresistive element 261 and the second magnetoresistive element 262 are disposed on one surface 240 (XY plane) of the semiconductor substrate 242. The magnetic field is applied in parallel to the XY plane.

  In such an arrangement, as shown in FIG. 8, the magnetic field direction and the current direction are orthogonal to each other. Further, as shown in FIG. 9, the resistivity changes when the magnetic field direction and the current direction are around 90 degrees. Therefore, in the third magnetoresistive element 269 and the fourth magnetoresistive element 270, the main straight line portion constituting the wiring is inclined at any angle of 0 degree to 45 degrees and 135 degrees to 180 degrees with respect to the Y direction. Are arranged.

  By arranging the wiring with the angle range defined in this way, the resistivity of the third magnetoresistive element 269 and the fourth magnetoresistive element 270 is hardly changed as shown by the broken line portion in FIG. be able to. Therefore, the third magnetoresistive element 269 and the fourth magnetoresistive element 270 can detect only the output fluctuation due to the stress, and can obtain a sensor output having a larger amplitude. Further, the degree of freedom of layout of the IC chip 222 can be increased.

(Third embodiment)
In the present embodiment, parts different from the first and second embodiments will be described. In the present embodiment, the third magnetoresistive element 269 and the fourth magnetoresistive element 270 are arranged on the surface constituting the ZX plane of the side surface 241 of the semiconductor substrate 242.

  In such an arrangement, as shown in FIG. 10, the magnetic field direction changes with respect to the current direction. Further, as shown in FIG. 11, the resistivity changes when the magnetic field direction and the current direction are around 90 degrees. As the rotor 100 rotates, the magnetic field direction and the current direction may intersect at 90 degrees. However, as shown by the broken line portion in FIG. 11, the change in resistivity around 90 degrees is small. The influence of the change in resistivity included in the third magnetic signal and the fourth magnetic signal is small.

(Other embodiments)
The configuration of the magnetic sensor 200 shown in each of the above embodiments is an example, and the configuration is not limited to the configuration shown above, and other configurations that can realize the present invention can be used. For example, the base material on which the magnetoresistive elements 261, 262, 269, and 270 are arranged is not limited to the semiconductor substrate 242. Of course, the one surface 240 of the semiconductor substrate 242 is not limited to a quadrangle, and can correspond to various shapes such as a circle, an ellipse, and a polygon.

  Further, the number of additional magnetoresistive elements for canceling the first stress and the second stress included in the third magnetic signal and the fourth magnetic signal is not two, but may be one or three or more. That is, the canceling magnetoresistive element may be disposed at a position where a canceling stress that cancels the first stress and the second stress is generated on one surface 240 or the side surface 241 of the semiconductor substrate 242. For example, based on the material and shape of the base material, what kind of stress is generated at which position of the base material can be grasped in advance by simulation etc. Therefore, the number and arrangement of elements for canceling stress according to the simulation result Should be considered.

240 One surface 241 Side 242 Semiconductor substrate 261, 262, 269, 270 Magnetoresistive element

Claims (5)

A substrate (242) having one surface (240) corresponding to the XY plane and a side surface (241) corresponding to the Z plane perpendicular to the one surface;
A first magnetic signal including a first stress component generated due to a position arranged on the one surface and based on a change in a resistance value when affected by a magnetic field from the outside is generated. A first magnetoresistive element (261) for outputting;
A second magnetic signal including a second stress component generated due to a position arranged on the one surface and based on a change in resistance value when affected by a magnetic field from the outside. A second magnetoresistive element (262) for outputting;
Based on a change in resistance value when placed on the one surface or the side surface and affected by a magnetic field from the outside, the first stress and the first stress are generated due to a position disposed on the one surface or the side surface. A canceling magnetoresistive element (269, 270) that outputs a canceling magnetic signal including a canceling stress component that cancels the second stress;
Magnetic sensor equipped with. The magnetic field is applied in parallel to the XY plane of one surface of the substrate,
The canceling magnetoresistive element is disposed on the XY plane of the one surface of the substrate, and main linear portions constituting the wiring are parallel to the Y direction, orthogonal to the Y direction, or in the Y direction. The magnetic sensor according to claim 1, wherein the magnetic sensor is disposed along both parallel and orthogonal directions. The magnetic field is applied in parallel to the XY plane of one surface of the substrate,
The canceling magnetoresistive element is arranged on the surface constituting the YZ plane of the side surface, and the main straight line portion constituting the wiring is 0 to 45 degrees, 135 degrees to the Y direction. The magnetic sensor according to claim 1, wherein the magnetic sensor is disposed to be inclined at any angle of 180 degrees. The magnetic field is applied in parallel to the XY plane of one surface of the substrate,
The magnetic sensor according to claim 1, wherein the canceling magnetoresistive element is arranged on a surface constituting a ZX plane among the side surfaces. The canceling magnetoresistive element is
A third magnetoresistive element (269) that outputs a third magnetic signal that is generated due to a position disposed on the one surface or the side surface and that includes a third stress component that cancels the first stress;
A fourth magnetoresistive element (270) that outputs a fourth magnetic signal that is generated due to a position disposed on the one surface or the side surface and includes a fourth stress component that cancels the second stress;
The magnetic sensor according to claim 1, comprising:

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