JP2018182059A - Method of manufacturing parts for semiconductor manufacturing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress a long manufacturing time of a component for a semiconductor manufacturing apparatus. SOLUTION: This is a method for manufacturing a component for a semiconductor manufacturing apparatus, which comprises a ceramic member having a substantially flat ceramic surface, a groove formed on the surface, and an electrode arranged on the bottom surface of the groove. A first preparation step of preparing a first ceramic molded body 130 in which an electrode is arranged on a first surface 132, and a second ceramic molded body 140 in which a recess 146 is formed in a second surface 144 are prepared. The second preparation step and the electrode 44P on the first surface are aligned with the positions corresponding to the recesses formed on the second surface, and the first surface and the second surface are crimped to each other. The crimping step of forming the bonded body 150 of the first ceramic molded body and the second ceramic molded body, and the third of the bonded bodies on the side opposite to the second surface in the portion of the second ceramic molded body. Includes a processing step of processing the surface 142 side of the surface to form a ceramic surface on which the groove 112 is formed. [Selection diagram] FIG. 6

Description

  The technology disclosed in the present specification relates to a method for manufacturing a component for a semiconductor manufacturing apparatus, which includes a ceramic surface and a ceramic member having an electrode disposed on the bottom of a groove formed in the ceramic surface.

  BACKGROUND ART A gas distributor that constitutes a shower head is known as a component for a semiconductor manufacturing apparatus including a ceramic member having a ceramic surface and having an electrode disposed on the bottom of a groove formed in the ceramic surface. The showerhead is disposed, for example, in a plasma CVD apparatus, above a holding device for holding a wafer. The gas distributor includes a ceramic member formed of a ceramic. A plurality of gas injection holes are formed on the lower surface of the ceramic member, and a flow passage communicating with the gas injection holes is formed inside the ceramic member. A thin film is formed on the surface of the wafer by supplying a process gas (for example, a reaction gas for film formation) into the flow path of the ceramic member and ejecting it from the gas injection holes.

  The following manufacturing method is known as a manufacturing method of the ceramic member by which an electrode is arrange | positioned to the groove part formed in such a ceramic surface (for example, refer patent document 1). First, a plurality of green sheets and a sheet on which the internal electrodes are printed are laminated, and a pressure press is performed to form a laminate having internal electrodes inside. Next, the laminate is processed into a desired shape by machining and fired. Next, a recess is formed on the surface of the laminate so as to expose the internal electrode, and an electrode paste is applied to the recess and fired.

JP, 2016-122724, A

  In the conventional manufacturing method described above, the laminate having the internal electrode inside is fired, a recess is formed on the fired laminate, an electrode paste is applied, and the laminate after application of the electrode paste is fired again . That is, in the conventional manufacturing method, since firing of the laminate twice is essential, there is a problem that it is difficult to shorten the manufacturing time of the ceramic member.

  In addition, such a subject is a subject common to manufacture of holding | maintenance apparatuses, such as not only the gas distribution body which comprises a shower head but an electrostatic chuck etc., for example. Moreover, such a subject is not a holding | maintenance apparatus but a subject common to manufacture of the components for semiconductor manufacturing apparatuses provided with the ceramic member by which the electrode was arrange | positioned to the groove part formed in the ceramic surface.

  The present specification discloses a technology that can solve the above-described problems.

  The technology disclosed in the present specification can be realized, for example, as the following form.

(1) A method of manufacturing a component for a semiconductor manufacturing device disclosed in the present specification is a ceramic member including a substantially planar ceramic surface, a groove formed on the ceramic surface, and an electrode disposed on the bottom of the groove. A first preparing step of preparing a first ceramic formed body having a first surface and the electrode disposed on the first surface, and A second preparing step of preparing a second ceramic molded body having the surface of the second surface and the recess formed in the second surface, and forming the electrode on the first surface on the second surface The bonded body of the first ceramic compact and the second ceramic compact is formed by press-fitting the first surface and the second surface according to the position corresponding to the recessed portion. Crimper And processing the third surface side opposite to the second surface in the portion of the second ceramic molded body in the joined body to form the ceramic surface in which the groove portion is formed. And a processing step. According to the method of manufacturing a component for a semiconductor manufacturing apparatus, the first ceramic molded body having the first surface on which the electrode is formed in advance, and the second ceramic molding having the second surface on which the recess is formed in advance Prepare with the body. Then, the first ceramic molded body and the first ceramic molded body are formed by pressing the first surface and the second surface while the electrode on the first surface is accommodated in the recess formed in the second surface. A bonded body with the ceramic molded body of 2 is formed. Then, of the joined body, the third surface side opposite to the second surface in the portion of the second ceramic molded body is processed to form the ceramic surface in which the groove is formed. Thereby, the ceramic member in which the electrode is disposed on the bottom surface of the groove portion formed on the substantially planar ceramic surface can be manufactured. Thereby, unlike the conventional manufacturing method, since application and baking of the electrode paste after baking of a joined_body | zygote are unnecessary, it can suppress prolongation of manufacturing time.

(2) In the method of manufacturing a component for a semiconductor manufacturing apparatus, a through hole penetrating from the bottom of the recess to the third surface is formed in the second ceramic molded body, and in the pressure bonding step, The bonded body may be formed by vacuum pressure bonding. According to the method of manufacturing a part for a semiconductor manufacturing apparatus, since the through hole penetrating from the bottom of the recess to the third surface is formed in the second ceramic molded body, the joined body is exposed to the air after vacuum pressure bonding. When it arrange | positions, deformation | transformation of the shape of the recessed part by the pressure difference between the inside and the outside of a recessed part can be suppressed.

(3) In the method for manufacturing a component for a semiconductor manufacturing apparatus, in the pressure bonding step, the electrode on the first surface of the first ceramic molded body and the bottom surface of the concave portion of the second ceramic molded body And the spacer may be disposed between them. According to the method of manufacturing a part for a semiconductor manufacturing apparatus, a spacer is interposed between the electrode on the first surface of the first ceramic compact and the bottom surface of the recess of the second ceramic compact. Thus, it is possible to suppress direct contact and bonding between the electrode and the bottom surface of the recess of the second ceramic molded body.

(4) In the method of manufacturing a component for a semiconductor manufacturing apparatus, the shape of the groove, the shape of the electrode, and the shape of the recess formed in the second ceramic molded body are all annular. It is good also as composition characterized by that. Even when the shape of the groove portion formed on the ceramic surface and the shape of the electrode are annular, according to the method of manufacturing a component for a semiconductor manufacturing device, like the conventional manufacturing method described above. Since firing twice is not essential, it is possible to suppress an increase in the manufacturing time of parts for semiconductor manufacturing devices.

  The technology disclosed in the present specification can be realized in various forms, for example, a gas distribution body for a shower head, a holding device such as an electrostatic chuck and a vacuum chuck, a heating device such as a susceptor It is possible to realize in the form of components for semiconductor manufacturing devices such as devices and a method of manufacturing the same.

It is a perspective view showing roughly the appearance composition of shower head 10 in this embodiment. It is an explanatory view showing roughly the XZ section composition of shower head 10 in this embodiment. FIG. 6 is an explanatory view showing an upper XY plane configuration of a gas distribution body 100. It is explanatory drawing which expands and shows the XZ cross-section structure of A part in FIG. 5 is a flowchart showing a method of manufacturing the gas distributor 100. FIG. 7 is an explanatory view schematically showing a manufacturing process of the gas distributor 100.

A. Embodiment:
A-1. Configuration of shower head 10:
FIG. 1 is a perspective view schematically showing an appearance configuration of the shower head 10 in the present embodiment, and FIG. 2 is an explanatory view schematically showing an XZ cross-sectional configuration of the shower head 10 in the present embodiment. 3 is an explanatory view showing an XY plane configuration on the upper side of the gas distribution body 100 provided in the shower head 10, and FIG. 4 is an explanatory view showing an XZ cross-sectional configuration of a portion A in FIG. In each figure, mutually orthogonal XYZ axes for specifying the direction are shown. The same applies to FIG.

  The shower head 10 is disposed above a holding device (for example, an electrostatic chuck) for holding an object (for example, wafer W), and a process gas PG (for example, a reaction gas for film formation) is directed to the wafer W. For example, it is provided in a thin film forming apparatus (for example, a CVD apparatus) or an etching apparatus (for example, a plasma etching apparatus) used in a manufacturing process of a semiconductor device.

  As shown to FIG. 1 and FIG. 2, the shower head 10 is equipped with the gas distribution body 100 and the gas supply body 200 which were arrange | positioned side by side in the up-down direction (Z-axis direction). The gas distribution body 100 and the gas supply body 200 include an upper surface of the gas distribution body 100 (hereinafter, referred to as “distribution-side facing surface S2”) and a lower surface of the gas supply body 200 (hereinafter, referred to as “supply-side facing surface S3”). Are arranged to face each other in the vertical direction. The gas distributor 100 is detachably attached to the gas supplier 200 by an attachment mechanism (not shown). The gas distributor 100 corresponds to a component for a semiconductor manufacturing apparatus or a ceramic member in the claims.

(Gas distribution body 100)
The gas distributor 100 is, for example, a circular flat plate member and is made of ceramic. The diameter of the gas distribution body 100 is, for example, about 200 mm to 500 mm, and the thickness (the dimension in the vertical direction) of the gas distribution body 100 is, for example, about 5 mm to 20 mm.

  As shown in FIGS. 2 to 4, a groove 112 is formed in the distribution side facing surface S2 of the gas distribution body 100. The groove portion 112 is substantially annular when viewed in the vertical direction. The surface electrode 44 is disposed on the bottom surface 112A of the groove 112. The surface electrode 44 has a substantially annular shape extending along the groove 112 as viewed in the vertical direction, and is formed of a conductive material (for example, tungsten, molybdenum or the like). The thickness D1 (the dimension in the vertical direction) of the surface electrode 44 is smaller than the depth D2 (the dimension in the vertical direction) of the groove 112 (see FIG. 4). For this reason, the upper surface 44A of the surface electrode 44 and the supply-side facing surface S3 of the gas supply body 200 are separated in the vertical direction. Further, the width D3 of the surface electrode 44 (the dimension in the radial direction of the gas distributor 100) is narrower than the width D4 of the groove 112 (the dimension in the radial direction of the gas distributor 100). In the radial direction, a gap is formed between the inner circumferential surface of the surface electrode 44 and the inner circumferential wall of the groove 112, and a gap is formed between the outer circumferential surface of the surface electrode 44 and the outer circumferential wall of the groove 112. It is done. The gas ejection surface S1 corresponds to the ceramic surface in the claims, and the surface electrode 44 corresponds to the electrode in the claims.

  Further, as shown in FIG. 1 and FIG. 2, a plurality of gas injection holes 101 are formed on the lower surface of the gas distribution body 100 (hereinafter, referred to as “gas injection surface S1”). Note that, in order to eject the process gas PG uniformly to the entire wafer W, the plurality of gas injection holes 101 are circumferentially centered on the central axis of the gas distribution body 100 and on a plurality of concentric circles different in diameter from one another. It is arranged at equal intervals in the direction. However, the arrangement pattern of the plurality of gas injection holes 101 is not limited to this, and may be an arrangement pattern other than concentric circles. Further, in the gas distributor 100, a plurality of communication paths 104 which penetrate the gas distributor 100 in the vertical direction and communicate with the respective gas injection holes 101 are formed.

  Inside the gas distributor 100, an internal electrode 40 and a pair of via conductors 42 are provided. The internal electrode 40 has a substantially disc shape and is formed of a conductive material (for example, tungsten, molybdenum or the like). In the internal electrode 40, a plurality of through holes constituting the plurality of communication paths 104 are formed. In addition, each via conductor 42 is a conductor (a linear conductor simplified in FIG. 2) in which a plurality of vias and a plurality of pads are alternately arranged in the vertical direction, and the upper end of each via conductor 42 is Is connected to each surface electrode 44, and the lower end is connected to the internal electrode 40. Thereby, the internal electrode 40 and the surface electrode 44 are electrically connected.

(Gas supply 200)
As shown to FIG. 1 and FIG. 2, the gas supply body 200 is provided with the flat part 210 and the cylinder part 220. As shown in FIG. The flat plate portion 210 is, for example, a plate member having a circular flat surface, and is formed of a ceramic. The diameter of the flat plate portion 210 is substantially the same as the diameter of the gas distributor 100. In the vicinity of the central portion of the upper surface S4 of the flat plate portion 210, the cylindrical portion 220 is bonded via the bonding layer 300. The cylindrical portion 220 has, for example, a cylindrical shape extending in the vertical direction, and a gas introduction hole 202 penetrating in the vertical direction from the upper end to the lower end of the cylindrical portion 220 is formed. The cylindrical portion 220 is formed of a ceramic. The outer diameter of the cylindrical portion 220 is, for example, about 30 mm to 90 mm, the inner diameter is, for example, about 10 mm to 60 mm, and the length in the vertical direction is, for example, about 50 mm to 200 mm.

  Inside the flat plate portion 210, a gas flow passage 230 communicating with the gas introduction hole 202 of the cylindrical portion 220 and the plurality of communication passages 104 of the gas distribution body 100 is formed. The gas flow passage 230 includes a vertical flow passage 230A and a horizontal flow passage 230B. The vertical flow passage 230A vertically penetrates the vicinity of the central portion of the flat plate portion 210 and communicates with the gas introduction hole 202 of the cylindrical portion 220. The lateral flow passage 230B is a flow passage which is formed on the supply side opposing surface S3 of the flat plate portion 210 and extends in a direction parallel to the supply side opposing surface S3. More specifically, the lateral flow passage 230 B radially extends from the central axis of the gas supply body 200, and the plurality of circular grooves formed along the plurality of concentric circles in which the plurality of gas ejection holes 101 described above are arranged. And a plurality of radial grooves connecting the plurality of circular grooves. With such a configuration, the gas introduction hole 202 of the cylindrical portion 220 communicates with each of the plurality of gas injection holes 101 via the gas flow passage 230 and the communication passage 104.

  Further, a contact ring 240 is disposed on the supply-side facing surface S3 of the flat plate portion 210. The contact ring 240 has a substantially annular shape surrounding the periphery of the lateral flow passage 230B, and is formed of a conductive material (for example, tungsten, molybdenum or the like). The contact ring 240 is disposed in a region facing the above-described groove 112 formed in the distribution-side facing surface S2 of the gas distribution body 100. In addition, as shown in FIG. 4, the contact ring 240 is arrange | positioned so that it may protrude below (gas distribution body 100 side) from supply side opposing surface S3. The lower surface 240A of the contact ring 240 and the upper surface 44A of the surface electrode 44 are in contact over the entire circumference. Thereby, the internal electrode 40 and the contact ring 240 are electrically connected. In the present embodiment, the internal electrode 40 is an anode electrode and is grounded via the contact ring 240.

  With the above configuration, when the upper end of the cylindrical portion 220 of the gas supply body 200 is connected to a gas supply source (not shown), the process gas PG supplied from the gas supply source is flat via the cylindrical portion 220. It is led to the vertical flow passage 230A in the portion 210. The process gas PG led into the vertical flow passage 230A is led to the horizontal flow passage 230B. The process gas PG led to the lateral flow passage 230B is ejected radially from the gas ejection holes 101 through the gas ejection holes 101 of the gas distribution body 100 while being radially introduced by the lateral flow passage 230B. Also, for example, when a high frequency voltage for plasma generation is applied by a high frequency power source (not shown) to a chuck electrode (not shown) provided on an electrostatic chuck disposed below the shower head 10, A plasma is generated between the shower head 10 and the electrostatic chuck, and the plasma activates a process gas jetted from the shower head 10 to etch the wafer W held by the electrostatic chuck. Ru.

A-2. Method of Manufacturing Gas Distribution Body 100:
Next, a method of manufacturing the gas distributor 100 in the present embodiment will be described. FIG. 5 is a flowchart showing a method of manufacturing the gas distribution body 100, and FIG. 6 is an explanatory view schematically showing a manufacturing process of the gas distribution body 100. As shown in FIG.

A-2-1. Preparation process of the first ceramic molded body 130:
An unsintered first ceramic compact 130 is prepared (S110 in FIGS. 5 and 6). The first ceramic formed body 130 is, for example, a plate having a circular flat surface, and on the substantially planar upper surface 132 of the first ceramic formed body 130, an unsintered conductor (hereinafter referred to as the surface electrode 44). , “Unsintered surface electrode 44P” is disposed. Inside the first ceramic molded body 130, an unsintered conductor (hereinafter referred to as "unsintered internal electrode 40P") to be the internal electrode 40 later and an unsintered conductor (hereinafter referred to as the via conductor 42) And “a non-sintered via conductor 42P” is provided. In the first ceramic molded body 130, no through hole serving as the communication passage 104 is formed.

In the present embodiment, the first ceramic molded body 130 is prepared by using a sheet lamination method. First, an organic solvent is added to a mixture of aluminum nitride powder, yttrium oxide (Y ₂ O ₃ ) powder, an acrylic binder, and an appropriate amount of dispersant and plasticizer, and mixed in a ball mill to obtain a green sheet. Make a slurry for the The green sheet slurry is formed into a sheet by a casting apparatus and then dried to prepare a plurality of green sheets.

  In addition, a metallized paste is produced by adding a conductive powder such as tungsten or molybdenum to a mixture of an aluminum nitride powder, an acrylic binder, and an organic solvent and kneading. The non-sintered internal electrode 40P is formed on a specific green sheet by printing the metallized paste, for example, using a screen printing apparatus. Further, the green via conductor 42P is formed by printing the metallizing paste in a state where the via holes are provided in advance in the green sheet.

  Next, a plurality of these green sheets are thermocompression-bonded, and if necessary, the outer periphery is cut to prepare a green sheet laminate. The green sheet laminate is cut by machining to produce a disc-shaped compact. A substantially annular non-sintered surface electrode 44P is formed on the upper surface 132 by printing a metallizing paste on the upper surface 132 of the molded body using, for example, a screen printing apparatus. Thereby, the first ceramic molded body 130 can be manufactured. The upper surface 132 corresponds to the first surface in the claims.

A-2-2. Preparation process of the second ceramic molded body 140:
An unsintered second ceramic green body 140 is prepared (S110 in FIGS. 5 and 6). The second ceramic formed body 140 is, for example, a plate having a circular flat surface, and a concave portion 146 is formed on the substantially planar lower surface 144 of the second ceramic formed body 140. The recessed portion 146 has a substantially annular shape as viewed in the vertical direction, and has substantially the same diameter as the unsintered surface electrode 44P formed on the upper surface 132 of the first ceramic molded body 130. The width D5 of the recess 146 (the dimension in the radial direction of the second ceramic molded body 140) is the same as that of the gas distributor 100 in consideration of the fact that the second ceramic molded body 140 can shrink in the later-described firing step. The width is preferably slightly larger than the width D4 of the groove 112. Further, in consideration of the fact that the upper end side of the recess 146 can be processed in a processing step described later, the depth D6 (dimension in the vertical direction) of the recess 146 is preferably slightly deeper than the depth D2 of the groove 112. Further, in the second ceramic molded body 140, one or a plurality of through holes 148 penetrating from the bottom surface 146A of the recess 146 to the upper surface 142 are formed. In the second ceramic molded body 140, the communication passage 104 is not formed.

  In the present embodiment, the second ceramic molded body 140 is prepared by using a sheet lamination method. First, a plurality of green sheets are produced in the same manner as in the first method for producing a ceramic molded body 130, a plurality of these green sheets are thermocompression-bonded, the outer periphery is cut as necessary, and the green sheet laminate is produced. Make The green sheet laminate is cut by machining to produce a disc-shaped compact. Further, the above-described concave portion 146 is formed by machining on the lower surface 144 of the molded body, and a through hole 148 is further formed. Thereby, the second ceramic molded body 140 can be manufactured. The step of S110 corresponds to the first preparation step and the second preparation step in the claims, the lower surface 144 corresponds to the second surface in the claims, and the upper surface 142 , Corresponds to the third surface in the claims. Also, the spacer 400 is prepared. The spacer 400 is substantially annular in a vertical direction, and has substantially the same diameter as the recess 146 of the second ceramic molded body 140. The spacer 400 is formed of, for example, Teflon (registered trademark).

A-2-3. Crimping process:
Next, by pressing the upper surface 132 of the first ceramic compact 130 and the lower surface 144 of the second ceramic compact 140, the first ceramic compact 130 and the second ceramic compact 140 are produced. To form a joined body 150 with each other (S 120 in FIG. 5 and FIG. 6). Specifically, the upper surface 132 of the first ceramic compact 130 and the lower surface 144 of the second ceramic compact 140 are superimposed. At this time, the unsintered surface electrode 44P formed on the first ceramic compact 130 is aligned with the position corresponding to the recess 146 formed on the second ceramic compact 140 via the spacer 400. In other words, the upper surface 132 of the first ceramic formed body 130 and the lower side of the second ceramic formed body 140 such that the non-sintered surface electrode 44P faces the recess 146 via the spacer 400. Overlay with surface 144. As a result, unsintered surface electrode 44P is accommodated in recess 146, and spacer 400 is disposed between the upper surface of unsintered surface electrode 44P and the bottom of recess 146. At this time, it is preferable that the spacer 400 be in contact with both the upper surface of the green surface electrode 44P and the bottom surface of the recess 146. Then, in a state in which the upper surface 132 and the lower surface 144 are superimposed, the first ceramic compact 130 and the second ceramic compact 140 are joined by vacuum pressure bonding. Specifically, the first ceramic compact 130 and the second ceramic compact 140 are placed in a vacuum pack (not shown), and the inside of the vacuum pack is brought into a vacuum state to cause pressure bonding. Thereby, the joined body 150 can be formed.

A-2-4. Processing process:
Next, the upper surface side (the upper surface 142 side of the second ceramic molded body 140) of the joined body 150 is removed by grinding by machining (S130 in FIG. 5 and FIG. 6). This grinding process is performed until the upper end side of the recess 146 opens in the upper surface 142. Thereafter, the spacer 400 is removed from the recess 146. Thus, it is possible to form a grooved bonded body 160 having the distribution side facing surface S2 in which the above-described groove portion 112 is formed. Further, the grooved bonded body 160 is subjected to hole processing to form the plurality of communication paths 104 described above, and the dimension of the grooved bonded body 160 is adjusted by machining.

A-2-5. Firing process:
Next, the grooved bonded body 160 is degreased, and the degreased body is fired to prepare a sintered body (S140). The surface of this sintered body is polished. The gas distributor 100 is manufactured by the above steps.

A-3. Effects of the present embodiment:
According to the manufacturing method of the present embodiment, the first ceramic molded body 130 having the upper surface 132 on which the surface electrode 44 is formed in advance, and the second ceramic molding having the lower surface 144 on which the concave portion 146 is formed in advance. Prepare the body 140 (S110). Then, the bonded body 150 is formed by pressure bonding the upper surface 132 and the lower surface 144 while aligning the surface electrode 44 on the upper surface 132 with the position corresponding to the recess 146 formed in the lower surface 144. (S120). Then, the upper surface 142 side of the joined body 150 is processed to form the distribution side facing surface S2 in which the groove portion 112 is formed (S130). Thereby, the gas distribution body 100 in which the surface electrode 44 is disposed on the bottom surface 112A of the groove portion 112 formed in the substantially planar distribution-side facing surface S2 can be manufactured. Thereby, unlike the above-mentioned conventional manufacturing method, since application of electrode paste after calcination of joined object 150, degreasing, and calcination are unnecessary, extension of manufacturing time of gas distributor 100 can be controlled.

  Here, if the through holes 148 are not formed in the second ceramic molded body 140 in the pressure bonding step (S120), the groove 112 may be deformed as follows. After the bonded body 150 is formed by vacuum pressure bonding, the internal space of the concave portion 146 of the second ceramic molded body 140 is sealed by the first ceramic molded body 130 and is in a sealed state. When the bonded body 150 is taken out of the vacuum pack, the internal space of the recess 146 is maintained in a vacuum state, while the outside of the bonded body 150 is exposed to the air. That is, the bottom surface 146A of the recess 146 faces the vacuum space, while the upper surface 142 opposite to the bottom surface 146A faces the atmospheric space. Then, due to the pressure difference between the vacuum space and the atmosphere space, the portion of the bonded body 150 between the bottom surface 146A and the upper surface 142 may be crushed downward, and the groove 112 may be deformed accordingly. Thus, when the groove 112 is deformed, for example, when attaching the gas distributor 100 to the gas supply 200, the contact ring 240 of the gas supply 200 interferes with the periphery of the groove 112 and is not accommodated in the groove 112. There is a risk of problems. On the other hand, according to the manufacturing method of the present embodiment, the through holes 148 are formed in the second ceramic molded body 140. Therefore, when the joined body 150 is disposed in the atmosphere after vacuum pressure bonding, it is possible to suppress the deformation of the shape of the recessed portion 146 (groove portion 112) due to the pressure difference between the inside of the recessed portion 146 and the outside of the joined body 150.

  Further, according to the manufacturing method of the present embodiment, between the unsintered surface electrode 44P on the upper surface 132 of the first ceramic compact 130 and the bottom surface 146A of the recess 146 of the second ceramic compact 140. By interposing the spacer 400, it is possible to suppress direct contact and bonding between the green surface electrode 44P and the bottom surface 146A of the recess 146.

  Also, as described above, according to the manufacturing method of the present embodiment, even when the shape of the groove 112 formed in the distribution side facing surface S2 and the shape of the surface electrode 44 are annular, according to the manufacturing method of this embodiment, Since two times of firing as in the method is not essential, it is possible to suppress an increase in the manufacturing time of the gas distributor 100. Also, temporarily, after forming an annular pre-sintered electrode on the green sheet laminate before sintering, another green sheet before sintering is laminated so that the pre-sintered electrode is exposed, and an annular recess is formed. Manufacturing methods are conceivable. However, in this manufacturing method, as another green sheet before sintering, two sheets of an annular green sheet before sintering and a green sheet before sintering of a circular shape are sintered into a green sheet laminate before sintering. It laminates so that a pre-closing electrode may be exposed. It is difficult to laminate the ring-shaped green sheet before sintering and the green sheet before circular-shaped sintering precisely on the green sheet laminate before sintering. On the other hand, according to the manufacturing method of the present embodiment, after the annular recess is formed in the second ceramic molded body 140, the second ceramic molded body 140 is laminated on the first ceramic molded body 130. Since the second ceramic molded body 140 is not separated into two at the time of lamination, it is possible to suppress the deterioration of the quality of the gas distribution body 100.

B. Modification:
The technology disclosed in the present specification is not limited to the above-described embodiment, and can be modified into various forms without departing from the scope of the present invention. For example, the following modifications are also possible.

  In the above embodiment, the gas distribution body 100 having only the configuration corresponding to the ceramic member in the claims is exemplified as the component for the semiconductor manufacturing device, but the component for the semiconductor manufacturing device is not limited to this, and the ceramic member A configuration corresponding to something other than the above may also be provided. For example, the component for a semiconductor manufacturing apparatus may be, for example, a shower head 10 including the gas distributor 100 and the gas supplier 200.

  Further, in the gas distributor 100 of the above embodiment, the upper surface 44A of the surface electrode 44 is located at a position lower than the distribution side facing surface S2 in the vertical direction, but the invention is not limited thereto. 44A may be substantially at the same position as the distribution side facing surface S2 in the vertical direction. In this case, the lower surface of the contact ring 240 disposed on the supply-side facing surface S3 of the gas supply body 200 is also in substantially the same position as the distribution-side facing surface S2 in the vertical direction.

  In the above embodiment, the surface electrode 44 having a substantially annular shape in the vertical direction is illustrated as the electrode, but the present invention is not limited thereto, and an annular shape other than the annular shape in the vertical direction may be used. For example, a plurality of divided electrodes may be used. The same applies to the groove 112 and the spacer 400, and it may be an annular shape other than the annular shape, or may be a shape other than the annular shape. Further, the width D3 of the surface electrode 44 may be wider than the width D4 of the groove 112. For example, at least one end of the surface electrode 44 in the width direction (radial direction of the gas distribution body 100) may be covered with a ceramic. In short, the electrodes may be disposed in the groove and at least partially exposed to the outside.

  Moreover, the manufacturing method of the shower head 10 in the said embodiment is an example to the last, and can be variously deformed. For example, in S110, the ceramic molded bodies 130 and 140 may be prepared by using a press molding method. Further, in the preparation step (S110) of the second ceramic molded body 140, the through holes 148 may not be formed in the second ceramic molded body 140. In the pressure bonding step (S120), the spacer 400 may not be disposed between the upper surface 44A of the non-sintered surface electrode 44P and the bottom surface of the recess 146. Further, in the pressure bonding step, the first ceramic formed body 130 and the second ceramic formed body 140 may be joined by a method (for example, thermocompression bonding) other than vacuum pressure bonding. The processing (S130) may be performed after the firing step (S140). In this case, in the processing, the sintered body 150 is removed by cutting the upper surface side (the upper surface 142 side of the second ceramic molded body 140) by machining.

  The present invention is applicable not only to the gas distribution body 100 of the shower head 10 but also to the production of parts for semiconductor manufacturing devices such as holding devices such as electrostatic chucks and vacuum chucks, and heating devices such as polyimide heaters and susceptors. is there.

10: shower head 40: internal electrode 40P: unsintered internal electrode 42: via conductor 42P: unsintered via conductor 44: surface electrode 44A: upper surface 44P: unsintered surface electrode 100: gas distributor 101: gas injection hole 104: Communication passage 112: Groove portion 112A: Bottom surface 130: First ceramic molded body 132: Upper surface 140: Second ceramic molded body 142: Upper surface 144: Lower surface 146: Recess 146A: Bottom surface 148: Through hole 150 A joint 160: a grooved joint 200: a gas supply body 202: a gas introduction hole 210: a flat portion 220: a cylindrical portion 230: a gas flow path 230A: a longitudinal flow path 230B: a lateral flow path 240: a contact ring 240A: a lower surface 300: Bonding layer 400: Spacer PG: Process gas S1: Gas ejection surface S2: Distribution Facing surface S3: supply-side facing surface S4: top W: wafer

Claims (4)

A method of manufacturing a component for a semiconductor manufacturing apparatus, comprising a ceramic member having a substantially planar ceramic surface, a groove formed on the ceramic surface, and an electrode disposed on the bottom of the groove.
A first preparing step of preparing a first ceramic formed body having a first surface and the electrode disposed on the first surface;
A second preparing step of preparing a second ceramic formed body having a second surface and having a recess formed on the second surface;
The first electrode is placed on the first surface at a position corresponding to the recess formed in the second surface, and the first surface and the second surface are pressed together to form the first electrode. A pressure bonding step of forming a joined body of the second ceramic green body and the ceramic green body of
A processing step of processing the third surface side opposite to the second surface in the portion of the second ceramic molded body in the joined body to form the ceramic surface in which the groove portion is formed And a method of manufacturing a component for a semiconductor manufacturing apparatus. In the method of manufacturing a part for a semiconductor manufacturing apparatus according to claim 1,
The second ceramic molded body is formed with a through hole penetrating from the bottom surface of the recess to the third surface,
The method for manufacturing a component for a semiconductor manufacturing apparatus, wherein the bonded body is formed by vacuum pressure bonding in the pressure bonding step. In the method of manufacturing a part for a semiconductor manufacturing apparatus according to claim 1 or 2,
In the pressure bonding step, a spacer is disposed between the electrode on the first surface of the first ceramic compact and the bottom of the recess of the second ceramic compact. , And method of manufacturing parts for semiconductor manufacturing equipment. In the method of manufacturing a part for a semiconductor manufacturing apparatus according to any one of claims 1 to 3.
A method of manufacturing a component for a semiconductor manufacturing apparatus, wherein the shape of the groove, the shape of the electrode, and the shape of the recess formed in the second ceramic molded body are all annular. .

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