JP2018107417A - Light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device capable of suppressing color shift depending on a viewing angle. A light emitting device 100 is provided on a light emitting element 20 that emits first light and a light emitting surface of the light emitting element 20, and is excited by the first light to have a second wavelength longer than that of the first light. On a phosphor layer 30 containing a phosphor that emits the light of the above, a reflective film 40 that is provided on the phosphor layer 30 and reflects the first light and transmits the second light, and a reflective film 40. The translucent member 50 is provided with a first surface facing the light emitting surface of the light emitting element 20, and a second surface curved toward the light emitting element 20 and connected to the first surface. To be equipped with. [Selection diagram] Fig. 1

Description

  The present invention relates to a light emitting device.

Light emitting devices using light emitting diodes (LEDs) are widely used as displays, warning lights, indicator lights, and illumination lights.
For example, illumination that forms a tail lamp and a brake lamp of an automobile that emits red light by a blue light emitting diode that emits blue light and a phosphor that converts light from the blue light emitting diode into red is known (for example, patents). References 1 and 2).

JP-A-2015-88220 Japanese Patent Laying-Open No. 2015-88483

  However, the light emitting devices disclosed in Patent Documents 1 and 2 may cause a color shift of red light depending on the angle at which the light emitting device is viewed.

  Therefore, the light emitting device according to the present embodiment aims to provide a light emitting device that can suppress a color shift due to a viewing angle.

  The light emitting device according to the present embodiment includes a light emitting element that emits first light and a light emitting surface of the light emitting element, and is excited by the first light and has a wavelength longer than that of the first light. A phosphor layer containing a phosphor that emits light of 2; a reflective film that is provided on the phosphor layer, reflects the first light, and transmits the second light; and on the reflective film A translucent member provided on the light-emitting element, the translucent member facing the light-emitting surface of the light-emitting element, and a second surface curved to the light-emitting element side and connected to the first surface .

  In another aspect, the light-emitting device according to this embodiment includes a light-emitting element that emits first light and a light-emitting surface of the light-emitting element, and is excited by the first light to emit the first light. A phosphor layer containing a phosphor that emits second light having a longer wavelength than light; a translucent member provided on the phosphor layer; provided on the translucent member; A reflective film that reflects light and transmits the second light, wherein the translucent member is curved toward the light emitting element side, the first surface facing the light emitting surface of the light emitting element, and the first light emitting element. A second surface connected to the first surface.

  A method for manufacturing a light emitting device according to the present embodiment, comprising: preparing a cup-shaped translucent member having a first surface and a second surface that is curved and connected to the first surface; Forming a reflective layer which is a dielectric multilayer film alternately including dielectric layers having different refractive indexes on the cup-shaped inner surface of the optical member; and forming a phosphor layer on the reflective layer And a step of disposing the phosphor layer on the light emitting element such that a light emitting surface of the light emitting element faces a first surface that is the cup-shaped inner surface of the light transmissive member.

  It is a manufacturing method of the light-emitting device concerning this embodiment in another viewpoint, Comprising: The process of preparing the cup-shaped translucent member which equips an inner surface with the 1st surface and the 2nd surface which curves and connects with the 1st surface. And forming a reflective layer which is a dielectric multilayer film alternately including dielectric layers having different refractive indexes on the outer surface of the cup shape of the translucent member, and the cup shape of the translucent member Forming the phosphor layer on the inner surface of the light-transmitting member, and emitting the light-transmitting member so that the light-emitting surface of the light-emitting element faces the first surface that is the cup-shaped inner surface of the light-transmitting member. Placing on the device.

  Accordingly, it is possible to provide a light emitting device that can suppress color misregistration due to a viewing angle.

1 is a schematic cross-sectional view illustrating an example of a light emitting device according to Embodiment 1. FIG. 3 is a chromaticity diagram illustrating chromaticity coordinates (CIE1931) of light emitted from the light emitting device according to Embodiment 1. FIG. FIG. 4 is a diagram showing a reflectance with respect to a wavelength of a reflective film when light is vertically incident (incidence angle 0 °) in the light emitting device according to the first embodiment. It is a figure which shows the reflectance in the incident angle of the 1st light which the light emitting element emits with respect to a reflecting film. It is a figure which shows the reflectance in the incident angle of the 1st light which the light emitting element emits with respect to a reflecting film. 6 is a schematic cross-sectional view showing an example of a light emitting device according to Embodiment 2. FIG. 6 is a schematic cross-sectional view illustrating an example of a light emitting device according to Embodiment 3. FIG. (Sr, Ca) AlSiN _3: Eu as the phosphor, CaAlSiN _3: is a spectrum diagram showing the powder reflectance of Eu phosphor.

Hereinafter, the light emitting device according to the embodiment will be described. However, the present invention is not limited to this embodiment. The embodiment described below exemplifies a light emitting device for embodying the technical idea of the present invention, and the present invention is not limited to the following light emitting device.
The relationship between the color name and chromaticity coordinates, the relationship between the wavelength range of light and the color name of monochromatic light, and the like comply with JIS Z8110. Specifically, 380 nm to 410 nm is purple, 410 nm to 455 nm is blue purple, 455 nm to 485 nm is blue, 485 nm to 495 nm is blue green, 495 nm to 548 nm is green, 548 nm to 573 nm is yellow green, 573 nm to 584 nm is yellow, 584 nm to 610 nm is yellowish red, and 610 nm to 780 nm is red.

Further, in the light emitting device and the manufacturing method thereof according to Embodiment 1, “upper”, “lower”, “left”, “right”, and the like are interchanged depending on the situation. In the present specification, “upper”, “lower” and the like indicate relative positions between components in the drawings referred to for explanation, and indicate absolute positions unless otherwise specified. Not intended.
In the present specification, the “upper” in the light emitting element “upper”, the phosphor layer “upper”, the reflective film “upper”, etc. is not limited to the contacted form, and other members are arranged in between without contacting. It may be a form. For example, when “arranged on the A member” such as “arranged on the light emitting surface of the light emitting element 20”, the case where it is provided in contact with the A member and another layer on the A member via And the case where it is provided.
In the present specification, a numerical range indicated using “to” indicates a range including the numerical values described before and after “to” as the minimum value and the maximum value, respectively. Further, the content of each component in the composition means the total amount of the plurality of substances present in the composition unless there is a specific notice when there are a plurality of substances corresponding to each component in the composition.

<Embodiment 1>
Hereinafter, the light-emitting device according to the present embodiment will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional view illustrating an example of a light emitting device according to the first embodiment. FIG. 2 is a chromaticity diagram showing chromaticity coordinates (CIE1931) of light emitted from the light emitting device according to the first embodiment. The incident angle A of the first light with respect to the reflective film indicates the incident angle A shown in FIG. Unless otherwise specified, the center of the active layer is used as a reference in the plan view of the light emitting element. Assuming that the first light is emitted from the center of the active layer, the incident angle A is defined.

  The light emitting device 100 includes a base 10, a light emitting element 20 disposed on the base 10, a phosphor layer 30 disposed on the light emitting element 20, a reflective film 40 provided on the phosphor layer 30, and a reflection A translucent member 50 provided on the film 40 is provided. The base 10 is provided on the first lead 11, the second lead 12, the fixing portion 13 disposed between the first lead 11 and the second lead 12, and the first lead 11 and the second lead 12. It has a side wall 14. The base 10 is formed with a recess 15, the first lead 11, the second lead 12, and the fixing portion 13 are disposed on the inner bottom surface 16 of the recess 15, and the side wall 14 is disposed on the inner surface 17 of the recess 15. . The light emitting element 20 is disposed on the inner bottom surface 16 of the recess 15 of the base 10, and the resin 70 is disposed in the recess 15 of the base 10 so as to be in contact with the translucent member 50. The resin 70 contains a reflecting member. The light emitting element 20 may be disposed on the inner bottom surface 16 of the recess 15 using a die bond material such as a metal such as gold or solder, or a resin such as an epoxy resin or a silicone resin. The uppermost surface of the recess 15 of the base 10 is preferably located at a position higher than the surface of the translucent member 50 with reference to the inner bottom surface 16 of the recess 15 of the base 10. Accordingly, it is possible to prevent the translucent member 50 from dropping off due to the hooking of other members. The light emitting element 20 includes a light emitting surface 23 on the upper surface side. The translucent member 50 includes a first surface facing the light emitting surface 23 of the light emitting element 20 and a second surface curved toward the light emitting element 20 and connected to the first surface. It is preferable that the phosphor layer 30 and the reflective film 40 have portions parallel to the first surface and the second surface of the translucent member 50. Moreover, it is preferable that the fluorescent substance layer 30, the translucent member 50, and the reflective film 40 are similar shapes. Here, the similar shape means that it has a flat surface and a curved surface, and is different from a strict similar shape such as the same ratio and scale.

The reflective film 40 corresponding to the first surface of the translucent member 50 preferably covers the entire light emitting surface 23 of the light emitting element 20. This is because most of the light from the light emitting element 20 can be reflected by the reflective film 40. Here, the reflective film 40 corresponding to the first surface of the translucent member 50 means the reflective film 40 disposed on the first surface of the translucent member 50. Further, the fact that the reflective film 40 corresponding to the first surface covers the entire light emitting surface 23 of the light emitting element 20 means that the phosphor layer 30 is covered.
The translucent member 50 preferably has a cup shape with a flat first surface. However, it may be a tunnel shape in which one pair of surfaces is curved and the other pair of surfaces are not curved.

The light emitting element 20 emits first light having an emission peak wavelength in the range of 355 nm to 485 nm. Depending on the characteristics of the reflective film 40, the light emitting element 20 emits first light having an emission peak wavelength of 355 nm to less than 455 nm, and emits first light having an emission peak wavelength of 455 nm to 485 nm. Things can be used. Even if the light-emitting element 20 that emits the first light having the emission peak wavelength of 355 nm to 485 nm is used by forming the translucent member 50 and the reflective film 40 in a predetermined shape, the light from the light-emitting element 20 Most of the light can be reflected by the reflective film 40, and the light emission efficiency of the light emitting device 100 can be increased.
The light emitting element 20 includes a semiconductor stacked body 21 and a substrate 22. The semiconductor stacked body 21 is stacked in the order of the first semiconductor layer 21a, the active layer 21b, and the second semiconductor layer 21c. The light emitting element 20 has a light emitting surface on either the substrate 22 side or the semiconductor laminate 21 side. Since the face-down mounting is performed here, the substrate 22 side is the light emitting surface.

The phosphor layer 30 contains a phosphor that is excited by the first light and emits second light having a longer wavelength than the first light. The phosphor layer 30 may be formed of only a phosphor, and the phosphor may be solidified with an organic substance such as a resin or an inorganic substance such as a ceramic. The phosphor layer 30 is excellent in heat resistance when the phosphor particles are baked and hardened. When the phosphor particles are dispersed in an epoxy resin or a silicone resin, the phosphor layer 30 can be easily formed. A product obtained by baking and solidifying phosphor particles and ceramic particles is also excellent in heat resistance. These are appropriately selected according to the purpose and application.
The phosphor contained in the phosphor layer 30 preferably has an emission peak wavelength in the range of 550 nm to 780 nm, and more preferably has an emission peak wavelength in the range of 584 nm to 680 nm. This is because the emission luminance can be increased by having the emission peak wavelength in this range. Moreover, it is because red light emission is easy to visually recognize.

The reflective film 40 is preferably provided directly or indirectly on the translucent member 50. The reflective film 40 is preferably formed depending on the shape of the translucent member 50. That is, when the translucent member 50 has a cup shape, the reflective film 40 is preferably provided directly on the inner surface of the cup.
The reflective film 40 has a property of reflecting the first light and transmitting the second light. In the reflection spectrum of the reflection film 40, in the planar state, the reflection film 40 has a reflectivity of 95% or more from the 0 ° to the first angle of the incident angle A of the first light with respect to the reflection film 40. What has a reflectance from 20% to 70% from the first angle to the second angle can be used. Further, in the planar state, the reflective film 40 may further include a portion where the reflectance from the second angle to the third angle is 20% or less. When the reflection film in a planar state is used, when the incident angle is equal to or greater than a predetermined angle, the reflectance is greatly reduced, and the amount of light transmitted through the reflection film is increased. When the amount of light that passes through the reflective film increases, the amount of return light that returns to the phosphor layer 30 decreases, and as a result, the amount of second light emitted from the light emitting device 100 decreases. On the other hand, the translucent member 50 and the reflective film 40 are made to have a cup shape or the like so that the incident angle with respect to the light emitting element 20 is in a range from 0 ° to the first angle, thereby transmitting the reflective film 40. The light is greatly reduced and the return light returning to the phosphor layer 30 is increased. As a result, the amount of the second light emitted from the light emitting device 100 is increased.

The light emitting surface 23 of the light emitting element 20 and the reflective film 40 corresponding to the first surface are preferably parallel. This is because the incident angle A is set to 0 ° to the first angle, and the reflection efficiency of the first light can be increased.
As a result, the translucent member 50 and the reflective film 40 are formed so that the incident angle A between the first light and the reflective film 40 is in the range from 0 ° to the first angle, thereby transmitting the reflective film 40. It is possible to provide the light emitting device 100 that can suppress the transmission of the first light and suppress the color shift due to the viewing angle.

  The translucent member 50 mainly transmits the second light. The translucent member 50 can be made of an inorganic material such as ceramics or glass, or an organic material such as a resin. The translucent member 50 includes a first surface facing the light emitting surface 23 of the light emitting element 20, and a second surface curved to the light emitting element side and connected to the first surface. The translucent member 50 preferably has a cup shape having a flat first surface. The second surface is preferably parallel to the side surface of the light emitting element 20. Alternatively, one opposing surface may be curved and the other opposing surface may be not curved. For example, it can be formed by using a light-transmitting member 50 having a flat plate shape, and after being provided with the reflective film 40 and the phosphor layer 30, a part thereof is curved.

The phosphor layer 30 disposed on the light emitting element 20 may be disposed via the adhesive layer 60. The adhesive layer 60 is preferably translucent. By using the adhesive layer 60, the phosphor layer 30 can be easily disposed on the light emitting element 20. Further, the phosphor layer 30 disposed on the light emitting element 20 may be directly joined without using an adhesive. By directly joining the light emitting element 20 and the phosphor layer 30, heat generated in the phosphor layer 30 can be radiated through the light emitting element 20. Furthermore, you may arrange | position the fluorescent substance layer 30 arrange | positioned on the light emitting element 20 apart not through an adhesive agent. Since heat from the light emitting element 20 is not directly transmitted to the phosphor layer 30, partial deterioration of the phosphor layer 30 can be suppressed. The adhesive layer 60 may contain a light diffusing material or the like. By including the light diffusing material, heat from the light emitting element can be efficiently radiated through the translucent member together with the light diffusion.
Although the reflective film 40 can be used alone, it is preferable to form the reflective film 40 on the translucent member 50 by printing or coating. The reflective film 40 can be easily provided by using a member having high strength as the translucent member 50. The reflective film 40 can also be formed on the phosphor layer 30 by printing or coating.

The resin 70 disposed on the inner bottom surface 16 of the recess 15 may be disposed on the side surface of the translucent member 50 except for the upper surface of the translucent member 50. Here, the upper surface of the translucent member 50 is a portion corresponding to the first surface in plan view. Further, the side surface of the translucent member 50 is an outer surface of a portion other than the first surface in plan view, for example, a portion corresponding to the second surface.
The resin 70 preferably contains at least one light diffusing material selected from the group consisting of zirconium oxide, yttrium oxide, aluminum oxide, aluminum hydroxide, barium carbonate, barium sulfate, magnesium oxide and magnesium carbonate. Thereby, the first light from the light emitting element 20 can be irradiated to the resin 70 containing the light diffusing material and returned to the phosphor layer 30 side, and the light emission efficiency of the second light from the phosphor layer 30 can be improved. Can be increased. Further, the resin 70 may contain titanium oxide. Titanium oxide is absorbed without reflecting light on the shorter wavelength side than 420 nm, but light on the longer wavelength side than 420 nm is efficiently reflected, so the light emitting element 20 having an emission peak wavelength between 420 nm and 430 nm is used. In that case, the resin 70 may contain titanium oxide.
Thereby, the light emitted from the light emitting device 100 is emitted having an emission spectrum substantially equal to the emission spectrum of the second light emitted from the phosphor layer 30.

  The light emitting element 20 has a pair of positive and negative electrodes on the same surface side, is mounted face down, and the light emitting element 20 and the first lead 11 and the second lead 12 are electrically connected by a conductive bonding member. . Instead of face-down mounting, face-up mounting can be performed. In the case of face-up mounting, instead of the conductive bonding member, the first lead 11 and the second lead 12 may be connected using wires.

  The reflection film 40 is provided on the phosphor layer 30, reflects the first light emitted from the light emitting element 20, and transmits the second light emitted from the phosphor layer 30. The reflective film 40 can be constituted by, for example, a dielectric multilayer film in which first dielectric layers 41 and second dielectric layers 42 having different refractive indexes are alternately stacked. The dielectric multilayer film is a film of the first dielectric layer 41 and a film of the second dielectric layer 42 based on the first refractive index of the first dielectric layer 41 and the second refractive index of the second dielectric layer 42. By setting the thickness, the first light emitted from the light emitting element 20 can be reflected, and the second light emitted from the phosphor layer 30 can be transmitted.

  Moreover, since the light-emitting device 100 has the side surface of the translucent member 50 covered with the resin 70, the second light can be emitted upward. Further, the first light transmitted through the reflective film 40 on the side surface of the translucent member 50 can be reflected by the resin 70. The second light emitted from the phosphor layer 30 is emitted through the reflective film 40, but the first light emitted from the light emitting element 20 is reflected by the reflective film 40 and returns to the phosphor layer 30 side. As a result, the phosphor can be excited and the luminous efficiency can be increased. Thereby, the emission of the first light emitted from the light emitting device 100 to the outside is suppressed, and the light emitted from the light emitting device 100 to the outside is substantially only the second light of the phosphor layer 30. It is possible to prevent color misregistration in the vertical direction or the oblique direction with respect to the semiconductor stacked body 21.

  In the light emitting device 100, when a dielectric multilayer film is used as the reflective film 40, almost all the light incident perpendicularly (0 °) to the flat dielectric multilayer film is reflected, but the light that is not perpendicularly incident is reflected. Some are transparent. In order to reduce the emission of the light that is not perpendicularly incident to the outside, a part of the translucent member 50 and the reflective film 40 is curved, and an incident angle in which most of the first light from the light emitting element 20 is nearly perpendicular. By doing so, the first light transmitted through the reflective film 40 can be reduced.

  The light emitting device 100 has (x = 0.645, y = 0.335), (x = 0.665, y = 0.335), (x = 0.0.3) in the xy chromaticity coordinate system of the CIE1931 chromaticity diagram. 735, y = 0.265), (x = 0.721, y = 0.259), and emits light within a range surrounded by a rectangle formed by connecting the four points. With such a configuration, it is possible to provide a light emitting device that emits light in a predetermined red color and suppresses a color shift due to an angle.

The phosphor contained in the phosphor layer 30 may be at least one selected from (Sr, Ca) AlSiN ₃ : Eu phosphor, CaAlSiN ₃ : Eu phosphor, and K ₂ SiF ₆ : Mn phosphor. preferable. Moreover, it is good also as the combination. Accordingly, it is possible to provide a light emitting device that emits light in a predetermined red color and suppresses a color shift due to an angle.

As long as the light emitting device 100 is covered with the resin 70 except for the uppermost surface of the translucent member 50, for example, a bullet type, a surface mount type, a chip type, or the like may be used. In general, the bullet shape refers to a shape in which the shape of the resin constituting the outer surface is formed into a bullet shape. For example, it includes a lead frame having a cup on one side, a light emitting element disposed in the cup, and a sealing resin that covers a part of the light emitting element and the lead frame. In addition, the surface mount type refers to the one formed by placing a light emitting element in a concave storage portion and filling the light emitting element with resin. Examples of the material of the housing part include those made of thermoplastic resin, thermosetting resin, ceramics, metal, and the like. Further, the chip type does not have a concave accommodating portion unlike the surface mount type, and a phosphor is directly formed on the light emitting element, and the side surface of the light emitting element is fixed with a resin. In the chip type, the layer containing the phosphor may be a flat plate shape or a lens shape.
In the emission spectrum of the light emitting device 100, the emission peak intensity of the first light is preferably 1/10 or less of the emission peak intensity of the second light. In the emission spectrum of the light emitting device 100, the emission peak intensity of the first light is preferably 1/30 or more of the emission peak intensity of the second light. Thereby, most of the light emitted from the light emitting device 100 is the second light, and can be, for example, red light.
Here, the details will be described taking the surface mount type as an example.

[Base]
For the fixing portion 13 and the side wall 14 of the base 10, a resin such as a thermoplastic resin or a thermosetting resin, an inorganic material such as ceramics or glass, a metal subjected to an insulation process, or the like can be used. The fixing portion 13 and the side wall 14 of the base 10 may be separate members, but are preferably molded integrally.
It is preferable that the surface mount type base 10 has an insulating property and does not easily transmit light. Examples of the material of the base 10 include ceramics such as alumina and aluminum nitride, resins such as phenol resin, epoxy resin, polyimide resin, BT resin, and polyphthalamide. In addition, when using resin, you may mix inorganic fillers, such as glass fiber, a silicon oxide, a titanium oxide, an alumina, with a resin as needed. Among these, ceramics is more preferable because of its high heat dissipation effect.
The base 10 includes a first lead 11, a second lead 12, and a fixing portion 13. The base 10 is mainly a top view type that emits light in a direction substantially perpendicular to the mounting surface, and a side view type that emits light in a direction substantially parallel to the mounting surface. be able to. The first lead 11 and the second lead 12 are formed of a plate-like metal. Here, the first lead 11 and the second lead 12 do not protrude outward from the fixed portion 13 when viewed from the opening direction of the recess 15, but a configuration protruding outward from the fixed portion 13 can be employed.

  The material constituting the first lead 11 and the second lead 12 is, for example, a metal having a thermal conductivity of about 200 W / (m · K) or more, a material having a relatively large mechanical strength, Alternatively, a material that can be easily punched or etched is preferable. Specific examples include metals such as copper, aluminum, gold, silver, tungsten, iron and nickel, and alloys such as iron-nickel alloys and phosphor bronze. Further, the surface of the base material of the first lead 11 and the second lead 12 may be coated with silver, aluminum, gold or the like having a higher light reflectance than the base material.

  As the light emitting element 20, for example, a light emitting diode (LED) chip or a laser diode (LD) chip can be used, and among these, an LED chip is preferably used. By using the light emitting element 20 as the light emitting diode chip, the light from the light emitting element 20 can easily spread, so that the phosphor can be excited efficiently. As the light emitting element 20, for example, a near ultraviolet to blue light emitting diode chip including a nitride semiconductor is used. Here, the near-ultraviolet to blue light emitting diode chip refers to a chip having an emission peak wavelength in a range of 355 nm to 485 nm. In particular, a light emitting diode chip emitting near ultraviolet to blue light can be used having a light emission peak wavelength of 355 nm to less than 455 nm and a light emission peak wavelength of 455 nm to 485 nm. The light emitting element 20 includes a semiconductor stacked body 21 and a substrate 22. The semiconductor laminate 21 may be laminated on a substrate, or may be a laminate of the semiconductor laminate 21 on a substrate different from the growth substrate. Since near-ultraviolet light having a wavelength shorter than 400 nm is difficult to visually recognize, even if light leaks from the light emitting device, the color tone is hardly affected. However, it is preferable to suppress the transmission of the first light from the reflective film 40 in order to increase the amount of the second light.

Nitride semiconductor as referred to herein, the general _{formula: In X Al Y Ga 1-} X-Y N (0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is a semiconductor represented by the composition and its mixed semiconductor layer Various emission wavelengths can be selected depending on crystallinity. The light emitting element 20 using a nitride semiconductor includes, for example, a substrate 22 on which a nitride semiconductor such as sapphire can be grown, and a semiconductor stacked body 21 provided on the substrate 22.

  In the light emitting element 20, the semiconductor stacked body 21 is provided with a first semiconductor layer 21a, an active layer 21b, and a second semiconductor layer 21c. The first semiconductor layer 21a and the second semiconductor layer 21c have different polarities. For example, a p-type semiconductor layer is used for the first semiconductor layer 21a, an n-type semiconductor layer is used for the second semiconductor layer 21c, a p-electrode is connected to the p-type semiconductor layer, and an n-electrode is connected to the n-type semiconductor layer. Has been. The p electrode and the n electrode are formed on the same surface of the light emitting element 20, and are preferably flip-chip mounted on the first lead 11 and the second lead 12. Thereby, the upper surface of the light emitting element 20 becomes a flat surface, and the phosphor layer 30 can be disposed close to the upper side of the light emitting element 20. Although the light emitting element 20 includes the substrate 22, the substrate 22 may be removed during or after mounting, and the phosphor layer 30 may be bonded directly or via the adhesive layer 60 on the semiconductor stacked body 21.

[Phosphor layer]
The phosphor layer 30 absorbs the first light from the light emitting element 20 and generates light of different wavelengths. The phosphor layer 30 is formed, for example, by printing a translucent resin paste containing phosphor particles on the surface of the translucent member via the reflective film 40. The phosphor layer 30 may be composed of one or more layers. The phosphor layer 30 may contain a diffusing agent as necessary.

  Here, at least one type of phosphor that absorbs light from the light emitting element 20 having an emission peak wavelength of 355 nm to 485 nm and has an emission peak wavelength of 550 nm to 780 nm or a combination thereof is used. Here, red is mainly emitted as the emission color of the phosphor. The phosphor has only an emission peak wavelength at 550 nm to 780 nm and is not limited to one having an emission spectrum at 550 nm to 780 nm. In particular, those having an emission peak wavelength in the range from 610 nm to 680 nm are preferred, and those having an emission peak wavelength in the range from 610 nm to 650 nm are more preferred. Since the visibility decreases as it reaches a wavelength longer than 555 nm with a peak at about 555 nm, it is necessary to use a phosphor having an emission peak wavelength at 610 nm to 650 nm, which has a relatively high visibility in the red region. It is because it is preferable for improvement.

The average particle diameter of the phosphor is not particularly limited and can be appropriately selected depending on the purpose and the like. The average particle diameter of the phosphor is preferably 1 μm or more and 20 μm or less, and more preferably 5 μm or more and 15 μm or less from the viewpoint of light emission efficiency.
When the volume of the entire phosphor particles contained in the resin is the same, the particle surface area increases as the particle size decreases, and the light emitted from the phosphor particles is easily scattered by other phosphor particles, resulting in light extraction efficiency. Decreases. On the other hand, as the particle size increases, scattering is reduced and light extraction efficiency is increased, but the particle surface area is reduced, the amount of light emitted from the phosphor is reduced, and the amount of light that is not wavelength-converted is increased. Since the light reaching the phosphor layer 30 without wavelength conversion is returned again to the phosphor layer 30 side by the reflective film 40, the scattering of the particle surface is suppressed by increasing the particle size of the phosphor particles. Wavelength conversion of the first light from the light emitting element 20 can be performed efficiently. Therefore, in the light emitting device 100, the wavelength of the first light of the light emitting element 20 can be efficiently converted and the light extraction efficiency can be improved by increasing the particle diameter of the phosphor particles.

  In addition, the average particle diameter of the phosphor particles in the present specification refers to the average particle diameter of secondary particles formed by agglomerating primary particles. The average particle diameter (median diameter) of the secondary particles can be measured by, for example, a laser diffraction particle size distribution measuring device (product name: MASTER SIZER 3000, manufactured by MALVERN).

  The thickness of the phosphor layer 30 is preferably 30 μm to 150 μm, and more preferably 50 μm to 120 μm. Thereby, the amount of the second light lost due to the scattering in the phosphor layer 30 can be reduced, and the amount of the second light emitted from the phosphor layer 30 can be increased.

As the phosphor, a nitride phosphor, an oxide phosphor, a fluoride phosphor, a sulfide phosphor, or the like can be used.
The nitride-based phosphor is activated by at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and Lu. At least one selected from the group consisting of C, Si, Ge, Sn, Ti, Zr, and Hf, and at least one group II element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn. A phosphor containing the above Group IV element and N. O may be contained in the composition of the nitride phosphor.

Specific examples of the nitride-based phosphor include a general formula L _X M _Y N _{((2/3) X + (4/3) Y)} : R or L _X M _Y O _Z N _{((2/3) X + (4/3) Y- (2/3) Z)} : R (L is at least one Group II element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn. M. Is at least one group IV element selected from the group consisting of C, Si, Ge, Sn, Ti, Zr, and Hf, and R is Y, La, Ce, Pr, Nd, Sm, Eu, And at least one rare earth element selected from the group consisting of Gd, Tb, Dy, Ho, Er, and Lu. X, Y, and Z are 0.5 ≦ X ≦ 3, 1.5 ≦ Y ≦ 8, 0 <Z ≦ 3)).

More specific examples of nitride-based phosphors include SCASN-based phosphors represented by (Sr, Ca) AlSiN ₃ : Eu and CASN-based phosphors represented by CaAlSiN ₃ : Eu. it can.
In addition to nitride phosphors, KSF phosphors represented by K ₂ SiF ₆ : Mn, sulfide phosphors, and the like can be used.

  The example in which the phosphor layer 30 is formed by printing the translucent resin paste containing the phosphor particles has been described above. However, the phosphor layer 30 may be formed by depositing a translucent material such as glass or inorganic so as to include the phosphor. Further, although the phosphor layer 30 is shown in direct contact with the surface of the reflective film 40, the phosphor layer 30 is not necessarily in direct contact with the surface of the reflective film 40, and other adhesives and the like are used. It may be joined via a member. For example, a plate-like phosphor plate may be formed by pressure bonding, fusing, sintering, adhesion with an organic adhesive, or adhesion with an inorganic adhesive such as low-melting glass.

[Reflective film]
As the reflective film 40, it is preferable to use a dielectric multilayer film having high selectivity. Here, high selectivity means that the reflectance in the reflection wavelength band is high, the transmittance in the transmission wavelength band is high, and the change in reflectance or transmittance is steep between the reflection wavelength band and the transmission wavelength band. Say.

  The dielectric multilayer film is a reflective film in which two first dielectric layers 41 and second dielectric layers 42 having different refractive indexes are alternately and periodically formed with a thickness of λ / 4. Here, λ is a peak wavelength in a wavelength region to be reflected, and is an in-medium wavelength in each dielectric material. Theoretically, this dielectric multilayer film has a higher reflectivity as the refractive index difference between the two first dielectric layers 41 and the second dielectric layer 42 is larger, and as the number of cycles formed alternately is larger. It is known to be obtained. However, if the difference in refractive index between the two first dielectric layers 41 and the second dielectric layer 42 is too large or the number of periods is too large, the reflectivity rapidly decreases on both sides of the reflection peak wavelength λ (wavelength The wavelength dependence of the reflectance increases, and it becomes difficult to stably obtain the desired reflectance in the desired wavelength range. Therefore, in the dielectric multilayer film, each refractive index and refractive index difference between the first dielectric layer 41 made of a dielectric material having a high refractive index and the second dielectric layer 42 made of a dielectric material having a low refractive index are alternately arranged. The number of periods to be formed is appropriately set so that a desired reflectance is stably obtained in a desired wavelength range.

Specifically, the first refractive index of the first dielectric layer 41 having a high refractive index is set, for example, in the range of 1.5 to 3.0, and preferably in the range of 2.0 to 2.6. Is set. The second refractive index of the second dielectric layer 42 having a low refractive index is set, for example, in the range of 1.0 to 1.8, and preferably in the range of 1.2 to 1.6. . Further, the number of periods in which the first dielectric layer 41 and the second dielectric layer 42 are alternately formed is set in a range of 1 to 20, for example, and preferably in a range of 1 to 5. The difference between the first refractive index and the second refractive index is preferably 0.3 or more, more preferably 0.5 or more, and even more preferably 0.7 or more.
The dielectric material constituting the first dielectric layer 41 can be selected from, for example, TiO ₂ , Nb ₂ O ₅ , Ta ₂ O ₅ and Zr ₂ O ₅ . The dielectric material composing the second dielectric layer 42 can be made of, for example, a material selected from SiO ₂ , Al ₂ O ₃ and SiON.

[Translucent member]
The translucent member 50 is provided with the reflective film 40 and the phosphor layer 30 on one surface, and supports the reflective film 40 and the phosphor layer 30. As the translucent member 50, a plate-like body made of a translucent material such as glass or resin can be used. As the glass, for example, borosilicate glass or quartz glass can be selected. Moreover, as resin, it can select from a silicone resin and an epoxy resin, for example. The thickness of the translucent member 50 should just be the thickness which can provide sufficient mechanical strength to the fluorescent substance layer 30, without the mechanical strength in a manufacturing process falling. Further, the light transmissive member 50 may contain a diffusing agent. As the diffusing agent, titanium oxide, barium titanate, aluminum oxide, silicon oxide, or the like can be used. Further, the upper surface of the translucent member 50 serving as the light emitting surface, that is, the surface opposite to the surface on which the reflective film 40 and the phosphor layer 30 are provided is not limited to a flat surface and has fine irregularities. May be. When the light emitting surface has irregularities, the emitted light from the light emitting surface is scattered, and it is possible to suppress uneven brightness and uneven color.

[Adhesive layer]
The adhesive layer 60 bonds the light emitting element 20 and the phosphor layer 30 together. The adhesive layer 60 is preferably made of a material that can guide the emitted light from the light emitting element 20 to the phosphor layer 30 without being attenuated as much as possible. Specific examples include organic resins such as epoxy resins, silicone resins, phenol resins, and polyimide resins, with silicone resins being preferred. The thinner the adhesive layer 60 is, the better. This is because when the adhesive layer is thin, loss of light transmitted through the adhesive layer can be reduced, heat dissipation can be improved, and the intensity of light emitted from the light emitting device can be increased.

  The adhesive layer 60 may exist not only between the light emitting element 20 and the phosphor layer 30 but also on the side surface of the light emitting element 20. Further, when a silicone resin is used for the binder of the phosphor layer 30, it is preferable to use a silicone resin for the adhesive of the adhesive layer 60. Since the refractive index difference between the phosphor layer 30 and the adhesive layer 60 can be reduced, incident light from the adhesive layer 60 to the phosphor layer 30 can be increased.

[resin]
As a material of the resin 70, an insulating material is preferably used. In order to ensure a certain level of strength, for example, a thermosetting resin, a thermoplastic resin, or the like can be used. More specifically, a phenol resin, an epoxy resin, a BT resin, PPA, a silicone resin, etc. are mentioned. In addition, a reflective member that hardly absorbs light from the light-emitting element 20 and has a large refractive index difference with respect to the base resin can be used as the base resin. Specifically, by dispersing at least one light diffusing material selected from the group consisting of zirconium oxide, yttrium oxide, aluminum oxide, aluminum hydroxide, barium carbonate, barium sulfate, magnesium oxide and magnesium carbonate, it is efficient. It can reflect light.

[Reflectance]
FIG. 3 is a diagram illustrating the reflectance with respect to the wavelength of the reflective film when light is vertically incident (incident angle is 0 °) in the light emitting device according to the first embodiment. FIG. 3 is a simulation. 4 and 5 are diagrams showing the reflectance at the incident angle of the first light emitted from the light emitting element with respect to the reflective film. FIG. 4 is a partial extract of FIG.
The reflection film 40 has a different reflectance depending on each wavelength. For example, with respect to light having a wavelength of 360 nm, the incident angle A has a low reflectance at 0 ° to 20 °, the reflectance is nearly 100% at an incident angle A of 20 ° to 50 °, and the incident angle A Is 50% to 80 °, the reflectance decreases to nearly 50%.
Further, for light having a wavelength of 400 nm, the reflectivity is close to 100% at an incident angle A of 0 ° to 50 °, and the reflectivity is reduced to close to 50% at an incident angle A of 50 ° to 80 °.
For light having a wavelength of 420 nm, the reflectivity is close to 100% at an incident angle A of 0 ° to 40 °, and the reflectivity is reduced to close to 50% at an incident angle A of 40 ° to 80 °.
Furthermore, with respect to light having a wavelength of 450 nm, the reflectance is nearly 100% at an incident angle A of 0 ° to 40 °, and the reflectance is reduced to nearly 50% at an incident angle A of 40 ° to 70 °. When the incident angle A is 70 ° to 85 °, the reflectance decreases to nearly 10%.

Therefore, by selecting the emission peak wavelength of the light emitting element 20 to be used, the first surface of the translucent member 50 provided with the reflective film 40 can be widened, and the light emitting element 20 having a large shape in plan view can be obtained. Can be used. That is, when the light emitting element 20 having an emission peak wavelength of 460 nm is used, the first surface of the translucent member 50 needs to be contained within an incident angle of 40 °, but the emission peak wavelength is 400 nm. When the element 20 is used, the first surface of the translucent member 50 can be expanded to a range where the incident angle is 50 °.
From the above, the phosphor layer 30 can be efficiently irradiated with the first light from the light emitting element 20 by appropriately changing the materials and the like of the light emitting element 20 and the reflective film 40 to be used.

[Production method]
A method for manufacturing the light-emitting device of Embodiment 1 will be described.
A cup-shaped translucent member 50 having a first surface and a second surface curved and connected to the first surface is prepared. The translucent member 50 may be singulated, but may be continuous through a connecting member or the like.
On the cup-shaped inner surface of the translucent member 50, the reflective layer 40, which is a dielectric multilayer film alternately including dielectric layers having different refractive indexes, is formed. As the dielectric layer, for example, a plurality of niobium oxide and silicon oxide are alternately stacked. The reflectance can be changed according to the number of stacked layers.

The phosphor layer 30 is formed on the reflective layer 40. The phosphor layer 30 can be formed by means such as potting, spraying or printing. The phosphor layer 30 can be provided not only as a single layer but also as a plurality of layers of two or more layers. In addition, the phosphor layer 30 can use not only one kind of phosphor but also two or more kinds of phosphors. Although the film thickness of a fluorescent substance layer is not specifically limited, 30 micrometers-150 micrometers are preferable, and 50 micrometers-120 micrometers are especially preferable.
The phosphor layer 30 is disposed on the light emitting element 20 so that the light emitting surface of the light emitting element 20 faces the first surface which is the cup-shaped inner surface of the translucent member 50. For example, the opening direction of the cup-shaped translucent member 50 is directed to the upper surface, the adhesive layer 60 is filled in the cup, and the light emitting element 20 disposed on the base 10 is immersed. Accordingly, the adhesive layer 60 can be provided on the upper surface and the side surface of the light emitting element 20. However, the light emitting element 20 is not disposed on the base 10 in advance, but only the light emitting element 20 is disposed in the cup shape, the adhesive layer 60 is cured, and then the light emitting element 20 covered with the translucent member 50 is used as the base. It can also be joined on the table 10. On the other hand, it is also possible to apply a liquid adhesive layer 60 on the light emitting element 20 and join the light emitting element 20 so as to cover the light emitting element 20 with a light transmissive member 50. The finished adhesive layer 60 flows out to the side surface of the light emitting element 20 and can cover the side surface of the light emitting element 20. In addition, it is preferable to use the light emitting element 20 previously arrange | positioned at the base 10 with electrically conductive members, such as gold | metal | money and copper.
A resin 70 containing a reflective member is dropped into the recess 15 of the base 10, and the resin 70 is disposed on the outer surface corresponding to the second surface of the translucent member 50. Thereby, the light emission area can be reduced and the luminance can be increased.
As described above, the light emitting device 100 of Embodiment 1 can be manufactured.

<Embodiment 2>
A light-emitting device according to Embodiment 2 will be described with reference to the drawings. FIG. 6 is a schematic cross-sectional view illustrating an example of a light emitting device according to the second embodiment. The second embodiment is substantially the same except that the order of arrangement of the phosphor layer, the reflective film, and the translucent member, the form of the base, and the form of the adhesive layer are different from those of the first embodiment. A description of the same parts as those in the first embodiment may be omitted.

  The light emitting device 200 includes a base 110, a light emitting element 120 disposed on the base 110, a phosphor layer 130 disposed on the light emitting element 120, and a translucent member 150 provided on the phosphor layer 130. And a reflective film 140 provided on the translucent member 150. The base 110 has a first lead 111, a second lead 112, and a fixing portion 113 disposed between the first lead 111 and the second lead 112. The base 110 has a flat plate shape. In the light emitting element 120, a semiconductor stacked body 121 is provided with a first semiconductor layer 121 a, an active layer 121 b, and a second semiconductor layer 121 c on a substrate 122. The translucent member 150 includes a first surface facing the light emitting surface of the light emitting element 120, and a second surface curved to the light emitting element side and connected to the first surface. The first surface of the translucent member 150 is flat and has a cup shape. A phosphor layer 130 is provided on the cup-shaped inner surface of the translucent member 150, and a reflective film 140 is provided on the cup-shaped outer surface of the translucent member 150. The phosphor layer 130 and the reflective film 140 have portions parallel to the first surface and the second surface of the translucent member 150. The phosphor layer 130, the translucent member 150, and the reflective film 140 are preferably similar. By providing the phosphor layer 130 on one surface of the translucent member 150 and providing the reflective film 140 on the other surface, the adhesion between the translucent member 150 and the phosphor layer 130, and the translucent member 150 and the reflection layer are reflected. Adhesiveness with the film 140 can be increased, or manufacturing can be facilitated.

The light-emitting device 200 prepares a cup-shaped translucent member 150 having a first surface and a second surface that is curved and connected to the first surface on the inner surface.
A reflective layer 140 that is a dielectric multilayer film alternately including dielectric layers having different refractive indexes is formed on the cup-shaped outer surface of the translucent member 150. Further, the phosphor layer 130 is formed on the cup-shaped inner surface of the translucent member 150. The step of forming the reflective film 140 and the step of forming the phosphor layer 130 may be performed in the reverse order or at the same time.

The translucent member 150 is disposed on the light emitting element 120 so that the light emitting surface of the light emitting element 120 faces the first surface which is the cup-shaped inner surface of the translucent member 150. The light emitting element 120 is previously arranged on the flat base 110. The adhesive layer 160 is applied to the upper surface of the light emitting element 120 and covered with a cup-shaped translucent member 150. The light transmitting surface of the light emitting element 120 and the first surface of the light transmitting member 150 can be formed in parallel by the weight of the light transmitting member 150 itself.
As described above, the light emitting device 200 can be easily manufactured.
<Embodiment 3>

A light-emitting device according to Embodiment 3 will be described with reference to the drawings. FIG. 7 is a schematic cross-sectional view illustrating an example of a light emitting device according to the third embodiment. FIG. 8 is a spectrum diagram showing the powder reflectance of the (Sr, Ca) AlSiN ₃ : Eu phosphor and the CaAlSiN ₃ : Eu phosphor. The third embodiment is almost the same except that the phosphor layer is different from the second embodiment. A description of the same parts as those in the second embodiment may be omitted.

The light emitting device 300 includes a base 110, a light emitting element 120 disposed on the base 110, a phosphor layer 230 disposed on the light emitting element 120, and a translucent member 150 provided on the phosphor layer 230. And a reflective film 140 provided on the translucent member 150. In the phosphor layer 230, a CaAlSiN ₃ : Eu phosphor layer 231 is disposed on the side closer to the light emitting element 120, and a (Sr, Ca) AlSiN ₃ : Eu phosphor layer 232 is disposed on the far side. By arranging in this order, the luminous efficiency can be increased and a bright light emitting device can be provided as compared with the case where CaAlSiN ₃ : Eu phosphor and (Sr, Ca) AlSiN ₃ : Eu phosphor are dispersed. This is because, for example, the CaAlSiN ₃ : Eu phosphor has a higher reflectance than the (Sr, Ca) AlSiN ₃ : Eu phosphor in the vicinity of the emission wavelength of the light emitting device 120 of 440 nm to 480 nm, so the CaAlSiN ₃ : Eu phosphor. The blue light from the light emitting element 120 reflected at the interface between the layer 231 and the (Sr, Ca) AlSiN ₃ : Eu phosphor layer 232 can be returned to the CaAlSiN ₃ : Eu phosphor layer 231 again, and CaAlSiN ₃ : Eu. This is probably because the light emission of the phosphor is amplified. A (Sr, Ca) AlSiN ₃ : Eu phosphor having a lower reflectance and higher light absorption than the CaAlSiN ₃ : Eu phosphor in the vicinity of the emission wavelength of the light emitting element 120 is disposed in the upper layer (Sr, Ca) AlSiN ₃ : Blue light that passes through the Eu phosphor layer can be reduced.

The light emitting device 300 prepares a cup-shaped translucent member 150 having a first surface and a second surface that is curved and connected to the first surface on the inner surface.
A reflective layer 140 that is a dielectric multilayer film alternately including dielectric layers having different refractive indexes is formed on the cup-shaped outer surface of the translucent member 150. In addition, the phosphor layer 230 is formed on the cup-shaped inner surface of the translucent member 150 in the order of (Sr, Ca) AlSiN ₃ : Eu phosphor layer 232 and CaAlSiN ₃ : Eu phosphor layer 231. The step of forming the reflective film 140 and the step of forming the phosphor layer 230 may be in the reverse order or at the same time. The film thickness of the CaAlSiN ₃ : Eu phosphor layer 231 and the (Sr, Ca) AlSiN ₃ : Eu phosphor layer 232 is about 100 μm.

The translucent member 150 is disposed on the light emitting element 120 so that the light emitting surface of the light emitting element 120 faces the first surface which is the cup-shaped inner surface of the translucent member 150. The light emitting element 120 is previously arranged on the flat base 110. The adhesive layer 160 is applied to the upper surface of the light emitting element 120 and covered with a cup-shaped translucent member 150. The light transmitting surface of the light emitting element 120 and the first surface of the light transmitting member 150 can be formed in parallel by the weight of the light transmitting member 150 itself.
As described above, the light emitting device 300 can be easily manufactured.

  The light emitting device of the present embodiment can be used in a wide range of fields such as general lighting, in-vehicle lighting, ornamental lighting, warning lamps, and indicator lamps. For example, when a light emitting device used for a rear lamp, a brake lamp, or the like of a car is combined with a light emitting diode that emits near ultraviolet to blue light, for example, a nitride-based phosphor can be used.

DESCRIPTION OF SYMBOLS 10 Base 11 1st lead 12 2nd lead 13 Fixing part 14 Side wall 15 Recess 16 Inner bottom face 17 Inner side face 20 Light emitting element 21 Semiconductor laminated body 21a 1st semiconductor layer 21b Active layer 21c 2nd semiconductor layer 22 Substrate 23 Light emitting surface 30 Phosphor layer 40 Reflective film 41 First dielectric layer 42 Second dielectric layer 50 Translucent member 60 Adhesive layer 70 Resin 100 Light emitting device A Incident angle

Claims (18)

A light emitting element that emits first light;
A phosphor layer that is provided on a light emitting surface of the light emitting element and contains a phosphor that is excited by the first light and emits second light having a longer wavelength than the first light;
A reflective film that is provided on the phosphor layer and reflects the first light and transmits the second light;
A translucent member provided on the reflective film,
The translucent member includes a first surface facing a light emitting surface of the light emitting element, and a second surface curved toward the light emitting element and connected to the first surface. A light emitting element that emits first light;
A phosphor layer that is provided on a light emitting surface of the light emitting element and contains a phosphor that is excited by the first light and emits second light having a longer wavelength than the first light;
A translucent member provided on the phosphor layer;
A reflective film that is provided on the translucent member and reflects the first light and transmits the second light;
The translucent member includes a first surface facing a light emitting surface of the light emitting element, and a second surface curved toward the light emitting element and connected to the first surface.   The light-emitting device according to claim 1, wherein the phosphor layer and the reflective film have portions parallel to the first surface and the second surface of the translucent member. In the planar state, the reflective film has a reflectance of 95% or more from an incident angle of 0 ° to the first angle,
The light emitting device according to any one of claims 1 to 3, wherein the reflectance from the first angle to the second angle is 20% or more and 70% or less.   5. The light emitting device according to claim 1, wherein, in the planar state, the reflective film further includes a portion having an incident angle of a reflectance of 20% or less from the second angle to the third angle. The light emitting device is laminated in the order of a first semiconductor layer, an active layer, and a second semiconductor layer,
2. The incident angle between the light emitting element and the second surface of the reflective film in a sectional view is within a range from 0 ° to the first angle with respect to the center of the active layer in a plan view of the light emitting element. The light-emitting device according to any one of Items 5 to 5.   The light emitting device according to claim 1, wherein the light emitting surface of the light emitting element and the reflective film corresponding to the first surface are parallel to each other.   The light-emitting device according to claim 1, wherein the light-emitting element has an emission peak wavelength at 355 nm or more and less than 455 nm.   The light emitting device according to any one of claims 1 to 7, wherein the light emitting element has a light emission peak wavelength in a range of 455 nm to 485 nm.   The light emitting device according to claim 1, wherein the reflective film corresponding to the first surface covers the entire light emitting surface of the light emitting element.   The light-emitting device according to claim 1, wherein the translucent member has a cup shape in which the first surface is flat.   12. The light emitting device according to claim 1, wherein in the emission spectrum of the light emitting device, an emission peak intensity of the first light is 1/10 or less of an emission peak intensity of the second light.   13. The light emitting device according to claim 1, wherein an emission peak intensity of the first light is 1/30 or more of an emission peak intensity of the second light in an emission spectrum of the light emitting device.   The light emitting device according to claim 1, wherein a side surface of the translucent member is covered with a resin.   The light-emitting device according to claim 1, wherein the reflective film is a dielectric multilayer film. A plurality of the phosphor layers are laminated, and a CaAlSiN ₃ : Eu phosphor layer is disposed on a side closer to the light emitting element, and a (Sr, Ca) AlSiN ₃ : Eu phosphor layer is disposed on a far side. 15. The light emitting device according to any one of 15. A method of manufacturing a light emitting device,
Preparing a cup-shaped translucent member having an inner surface with a first surface and a second surface curved and connected to the first surface;
Forming a reflective layer which is a dielectric multilayer film alternately including dielectric layers having different refractive indexes on the cup-shaped inner surface of the translucent member;
Forming a phosphor layer on the reflective layer;
Disposing the phosphor layer on the light emitting element such that a light emitting surface of the light emitting element faces a first surface which is the cup-shaped inner surface of the translucent member;
A method for manufacturing a light-emitting device including: A method of manufacturing a light emitting device,
Preparing a cup-shaped translucent member having an inner surface with a first surface and a second surface curved and connected to the first surface;
Forming a reflective layer that is a dielectric multilayer film alternately including dielectric layers having different refractive indexes on the cup-shaped outer surface of the translucent member;
Forming a phosphor layer on the cup-shaped inner surface of the translucent member;
Disposing the translucent member on the light emitting element such that a light emitting surface of the light emitting element faces a first surface which is the cup-shaped inner surface of the translucent member;
A method for manufacturing a light-emitting device including:

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