JP2017537435A - Corrosion resistance reduction system - Google Patents

Abstract

Embodiments disclosed herein include a plasma source and a mitigation system for mitigating compounds produced in a semiconductor process. In one embodiment, a plasma source is disclosed. The plasma source includes a body having an inlet and an outlet, the inlet and outlet being fluidly coupled within the body. The body further includes an inner surface that is coated with yttrium oxide or diamond-like carbon. The plasma source operates to form a plasma within the body between the shunt device disposed in the body at a position where two flow paths are formed between the inlet and the outlet, and between the shunt device and the inner surface of the body It further includes a plasma generator arranged at a possible position.

Description

  Embodiments of the present disclosure generally relate to semiconductor processing equipment. More particularly, embodiments of the present disclosure relate to a plasma source and a mitigation system for mitigating compounds generated in a semiconductor process.

The process gases used by semiconductor processing facilities contain many compounds that must be reduced or processed prior to disposal due to regulatory requirements and environmental and safety concerns. Typically, a mitigation system may be coupled to the processing chamber to mitigate compounds exiting the processing chamber. The mitigation system typically includes at least a plasma source. Halogen-containing plasmas and gases are frequently used in etching or cleaning processes, and process chamber and mitigation system components are susceptible to corrosion by halogen-containing plasmas and gases. Corrosion shortens the service life of the processing chamber components and mitigation systems, and also introduces undesirable defects and contamination into the processing environment.
Accordingly, what is needed in the art is an improved plasma source and mitigation system for mitigating compounds produced in semiconductor processes.

Embodiments disclosed herein include a plasma source and a mitigation system for mitigating compounds produced in a semiconductor process. In one embodiment, a plasma source is disclosed. The plasma source includes a body having an inlet and an outlet, the inlet and outlet being fluidly coupled within the body. The body further includes an inner surface that is coated with yttrium oxide or diamond-like carbon. The plasma source operates to form a plasma within the body between the shunt device disposed in the body at a position where two flow paths are formed between the inlet and the outlet, and between the shunt device and the inner surface of the body It further includes a plasma generator arranged at a possible position.
In another embodiment, the mitigation system includes a foreline, and the inner surface of the foreline is coated with yttrium oxide or diamond-like carbon. The mitigation system further includes a plasma source coupled to the foreline, the plasma source including a body having an inlet fluidly coupled to the outlet. The body further includes an inner surface that is coated with yttrium oxide or diamond-like carbon. The plasma source further includes a flow dividing device disposed in the main body at a position where two flow paths are formed between the inlet and the outlet.
In another embodiment, a plasma source includes a body having an inlet and an outlet, an RF coil surrounding the body, and a channel formed in the body that fluidly couples the inlet and outlet. The inner surface of the channel is coated with yttrium oxide, diamond-like carbon, or aluminum oxide silicon magnesium yttrium.
In order that the above features of the present disclosure may be understood in detail, a more specific description of the present disclosure, summarized above, may be had by reference to embodiments that are partially illustrated in the accompanying drawings. . The accompanying drawings, however, illustrate only typical embodiments of the present disclosure and therefore should not be considered as limiting its scope, for the reason that the present disclosure accepts other equally effective embodiments Because it can.

1 is a schematic side view of a vacuum processing system having a plasma source. It is sectional drawing of the plasma source of FIG. It is a cross-sectional perspective view of a plasma source. It is the schematic of a plasma source. It is the schematic of a plasma source. It is the schematic of a plasma source. It is the schematic of a plasma source.

For ease of understanding, identical reference numerals have been used where possible to designate identical elements that are common to each figure. It is contemplated that the elements and features of one embodiment may be beneficially incorporated in other embodiments without further elaboration.
Embodiments disclosed herein include a plasma source and a mitigation system for mitigating compounds generated in a semiconductor process. Compounds produced in semiconductor processes are corrosive and can damage components of the mitigation system such as the plasma source. To extend the life of the mitigation system, the inner surface of the mitigation system components, such as the inner surface of the plasma source, may be coated with a corrosion-resistant yttrium oxide or diamond-like carbon. The plasma source may have a spherical body to improve the efficiency and diffusion of the coating process.

FIG. 1 is a schematic side view of a vacuum processing system 100 having a plasma source 102 utilized in a mitigation system 104. The mitigation system 104 includes at least a plasma source 102. The vacuum processing system 100 is generally configured to perform at least one integrated circuit manufacturing process, eg, a deposition process, an etching process, a plasma processing process, a preclean process, an ion implantation process, or other integrated circuit manufacturing process. A vacuum processing chamber 106. The process performed in the vacuum processing chamber 106 may be plasma assisted. For example, the process performed in the vacuum processing chamber 106 may be a plasma etching process.
The vacuum processing chamber 106 has a chamber exhaust 108 that is coupled to the plasma source 102 of the mitigation system 104 via a foreline 110. The exhaust portion of the plasma source 102 is coupled by an exhaust conduit 112 to a pump and facility exhaust portion, schematically illustrated by a single reference number 114 in FIG. The pump is typically utilized to evacuate the vacuum processing chamber 106, while the facility exhaust generally includes a scrubber or other exhaust scrubber to prepare the vacuum processing chamber 106 wastewater to enter the atmosphere.

The plasma source 102 is utilized to perform a mitigation process on gases and / or other materials exiting the vacuum processing chamber 106, thereby removing such gases and / or other materials into the environment and / or process equipment. It can be converted into a gentle composition. The plasma source 102 can generate capacitively or inductively coupled plasma that is utilized in the mitigation process. Details of the plasma source 102 are further described below.
In some embodiments, the inlet 116 is formed in the foreline 110 and / or the plasma source 102. The inlet 116 is configured to connect to a reduced reagent source (not shown) for supplying reduced reagent to the plasma source 102, which energizes the plasma source 102 and reacts with material exiting the vacuum processing chamber 106. Or otherwise assist in converting such materials to a more environmental and / or process facility friendly composition.

FIG. 2 is a cross-sectional view of the plasma source 102. The plasma generated by the plasma source 102 energizes and / or partially dissociates the compounds inside the wastewater exiting the vacuum processing chamber 106, making the compounds in the wastewater more harmful to the environment. To a form that does not give In one embodiment, the plasma source 102 may serve as a remote plasma source disposed upstream of the vacuum processing chamber 106 to deliver plasma products, such as molecules or nuclides, into the vacuum processing chamber 106.
The plasma source 102 can include a body 202 having a first end 204 and a second end 206. The inlet 210 may be formed at the first end 204 and the inlet 210 may be configured to be coupled to the foreline 110. An outlet 212 may be formed at the second end 206, and the outlet 212 may be configured to be coupled to the exhaust conduit 112. Inlet 210 and outlet 212 may be fluidly coupled within body 202 and may be aligned on axis 208. The body 202 may be spherical (or may have a spherical inner surface) to improve the efficiency of the coated inner surface 214 of the spherical body 202 of the plasma source 102. However, the hollow body 202 may have a shape other than a spherical shape. The body 202 may be made of quartz or aluminum oxide that is susceptible to corrosion by materials such as atomic or molecular halogen compounds, and these materials may exit the vacuum processing chamber 106 and enter the plasma source 102. In order to protect the body 202 of the plasma source 102 from corrosive materials and increase the useful life of the plasma source 102, the inner surface 214 of the body 202 may be coated with a coating material that is resistant to corrosive materials. . The coating material may be yttrium oxide, diamond-like carbon, or other suitable material. Other materials suitable for use as the coating material include materials that are resistant to corrosion when exposed to halogen. Diamond-like carbon is a class of amorphous carbon material that exhibits some of the typical properties of diamond. Diamond-like carbon contains a significant amount of SP ³ hybrid carbon atoms. The coating material may be coated on the inner surfaces 214 and 216 by any suitable method, such as chemical vapor deposition (CVD) or arc spraying. In embodiments where the body 202 of the plasma source 102 is spherical, the efficiency and diffusion of a coating process such as a CVD process is improved. To protect the foreline 110 from corrosive materials exiting the vacuum processing chamber 106, the inner surface of the foreline 110 may also be coated with a coating material such as yttrium oxide and diamond-like carbon.

  The opening 218 may be formed through the body 202. The opening 218 may be cylindrical and may have a longitudinal axis 220. The longitudinal axis 220 may be substantially perpendicular to the axis 208. The diverter 290 may be disposed through the opening 218 and extend into the internal volume of the body 202. Alternatively, the diversion device 290 may be disposed in the internal volume of the main body 202 without the opening 218 being interposed. In examples where the corrosive material in the waste water exiting the vacuum processing chamber 106 or where the plasma source 102 is a remote plasma source, a mixed gas such as a precursor and / or carrier gas for generating a remote plasma may be the first May enter the plasma source 102 through the inlet 210 at the end 204 of the plasma. The surface 216 of the diverter 290 that is exposed to the gas mixture facing the inner surface 214 of the body 202 may be coated the same as the inner surface 214 of the body 202. The mixed gas can be dissociated by the plasma formed in the plasma region 222 and treated with the mitigating reagent and exit through the outlet 212 of the second end 206 as a less dangerous material. The mixed gas is separated into two flow paths within the body 202 by a flow diverter 290 that extends through the opening 218 and then exits the body 202 through the outlet 212 as a single stream. Become. If the gas mixture is a corrosive material in the wastewater exiting the vacuum processing chamber 106, one or more mitigation reagents may be introduced into the plasma source 102 from the inlet 116 shown in FIG. Corrosive materials in wastewater may include halogen containing materials, such as fluorine or chlorine containing materials.

  FIG. 3 is a cross-sectional perspective view of the plasma source 102. As shown in FIG. 3, the body 202 may be spherical and may include an opening 218. The diversion device 290 may be disposed in the opening 218. The diverter 290 can extend partially or fully across the body 202. The flow diverter 290 may have a cylindrical shape or another geometric shape. In one embodiment, the shunt device 290 includes a plasma generator 302. In the embodiment of FIG. 3, the plasma generator 302 is an electrode. This electrode may be a hollow cylindrical electrode that can be coupled to an RF source (not shown) to energize the plasma generator 302. While RF power is applied to the plasma generator 302, the body 202 may be grounded. The plasma generator 302 is operable to form a plasma from a process gas disposed in the body 202 to form a plasma within the body 202 between the flow diverter 290 and the inner surface 214 of the body 202. Thus, the plasma source 102 is used as a capacitively coupled plasma source. Alternatively, one or more plasma generators (shown as coils 402 in FIGS. 4A-4D) can surround the body 202, so that RF power is transmitted from one or more plasma generators to the plasma. To form a plasma source 102 as an inductively coupled plasma source.

  A cooling jacket 304 may be coupled to the plasma generator 302 to keep the plasma generator 302 cool during operation. The plasma generator 302 may have an outer surface 306 opposite the inner surface 216. The cooling jacket 304 may be coupled to the outer surface 306. The cooling jacket 304 can have a cooling channel 308 formed therein, and the cooling channel 308 allows a coolant, such as water, to flow into the cooling jacket 304 and out of the cooling jacket 304. Coupled to inlet 310 and refrigerant outlet 312.

  4A-4D schematically illustrate various examples of the plasma source 102. FIG. 4A shows a side view of the plasma source 102 according to an example. The plasma source 102 includes a body 403 having an inlet 405 and an outlet 407. The body 403 may be spherical, may have another geometric shape, and may be made from the same material as the body 202 shown in FIG. The plasma source 102 can have one or more plasma generators 302 disposed outside the body 403 in a position operable to form plasma within the body 403. In one embodiment, the one or more plasma generators 302 are in the form of an RF coil 402 that surrounds the body 403 of the plasma source 102. The RF coil 402 is supplied with energy so as to inductively couple power to the gas flow inside the main body 403, and the plasma source 102 shown in FIGS. 4A to 4D may be used as the inductively coupled plasma source. The plasma source 102 shown in FIGS. 4A to 4D does not include the opening 218 shown in FIG. 2 because the plasma generator 302 is disposed outside the main body 403. In one embodiment, corrosive material exiting the vacuum processing chamber 106 flows into the body 403 via the inlet 405 and exits the body 403 via the outlet 407. The corrosive material can corrode the body 403. In order to protect the body 403 of the plasma source 102 from corrosive materials and increase the useful life of the plasma source 102, the inner surface of the body 403 may be coated with a coating material that is resistant to corrosive materials. The coating material may be yttrium oxide, diamond-like carbon, or other suitable material. The coating material may be coated on the inner surface of the body 403 by any suitable method, such as chemical vapor deposition (CVD) or arc spraying.

  Alternatively, the corrosive material exiting the vacuum processing chamber 106 flows into the channel formed inside the body 403 via the inlet 405, and the inner surface of the channel is coated with a coating material resistant to the corrosive material. Also good. The coating material on the inner surface of the channel is yttrium oxide, diamond-like carbon, AsMY (aluminum oxide silicon magnesium yttrium), anodized material, ceramic liner, quartz tube, parylene, or other suitable material Also good. In some embodiments, the body 403 is a unitary material and a channel defined between the inlet 405 and the outlet 407 is formed in the unitary body 403. In other embodiments, the body 403 is hollow and the hollow interior of the body 403 forms a channel defined between the inlet 405 and the outlet 407. One or more cooling channels may be formed in the space between the channel and the wall of the hollow body 403. 4B-4D show various examples of channels inside the body 403 of the plasma source 102. FIG.

  FIG. 4B is a cross-sectional view of the plasma source 102. The plasma source 102 includes a plasma generator 302 in the form of an RF coil 402, a body 403, and a channel 410 formed inside the body 403. The body 403 may be hollow as shown in FIG. 4B or may be a unitary material as shown in FIGS. 4C and 4D. The channel 410 can extend from the inlet 405 to the outlet 407, as shown in FIG. 4B, and may have a refracted portion 411 between the inlet 405 and the outlet 407. The refracted portion 411 can include a longitudinal portion 420 and a bent portion 422. The longitudinal portion 420 may be substantially perpendicular to a central axis 450 that extends through the inlet 405 and outlet 407. The inner surface of the channel 410 may be coated with a coating material that is resistant to corrosive materials. The coating material on the inner surface of the channel may be yttrium oxide, diamond-like carbon, AsMY, anodized material, ceramic liner, quartz tube, parylene, or other suitable material.

  FIG. 4C is a cross-sectional view of the plasma source 102. The plasma source 102 includes a plasma generator 302 in the form of an RF coil 402, a body 403, and a channel 412 formed inside the body 403. Channel 412 extends from inlet 405 to outlet 407. In one embodiment, channel 412 includes a plurality of parallel passages 414 and at least two secondary channels 416 connecting adjacent passages 414. The passage 414 may be angled with respect to the RF coil 402, and the angle may be between 0 and 180 degrees, for example about 90 degrees. The passage 414 may be substantially parallel or substantially perpendicular to the central axis 450 as shown in FIG. 4C. The inner surface of channel 412 may be coated with a coating material that is resistant to corrosive materials. The coating material on the inner surface of the channel may be yttrium oxide, diamond-like carbon, AsMY, anodized material, ceramic liner, quartz tube, parylene, or other suitable material.

  FIG. 4D is a cross-sectional view of the plasma source 102. The plasma source 102 includes a plasma generator 302 in the form of an RF coil 402, a body 403, and a channel 418 formed inside the body 403. The channel 418 can extend from the inlet 405 to the outlet 407, as shown in FIG. 4D, and can have a refracted portion 419 between the inlet 405 and the outlet 407. The refracted portion 419 can include a longitudinal portion 424 and a bent portion 426. The longitudinal portion 424 may be substantially parallel to the central axis 450. The inner surface of channel 418 may be coated with a coating material that is resistant to corrosive materials. The coating material on the inner surface of the channel may be yttrium oxide, diamond-like carbon, AsMY, anodized material, ceramic liner, quartz tube, parylene, or other suitable material.

  The mitigation system may include a foreline and a plasma source, where the inner surface of the foreline and the plasma source protect the foreline and plasma source from corrosive materials that may enter the foreline and plasma source. It may be coated with a coating material such as yttrium oxide or diamond-like carbon. Alternatively, the channel may be formed of a plasma source having a spherical, hollow or integral body, and the inner surface of the channel may be coated with a coating material that is resistant to corrosive materials. The coating material on the inner surface of the channel may be yttrium oxide, diamond-like carbon, AsMY, anodized material, ceramic liner, quartz tube, parylene, or other suitable material. Covering the inner surface increases the useful life of the mitigation system.

  While the foregoing is directed to embodiments of the present disclosure, other and further embodiments may be devised without departing from the basic scope of the present disclosure, the scope of which is disclosed in the following patents: Determined by the claims.

Claims (15)

A body including an inlet and an outlet, wherein the inlet and the outlet are fluidly coupled within the body, further including an inner surface, wherein the inner surface is coated with yttrium oxide or diamond-like carbon;
A flow dividing device disposed in the main body at a position where two flow paths are formed between the inlet and the outlet;
A plasma generator disposed in a position operable to form a plasma within the body between the flow diverter and an inner surface of the body;
A plasma source.   The plasma source of claim 1, wherein the body is spherical and made of quartz or aluminum oxide.   The plasma source of claim 1, wherein the plasma generator further comprises a cooling jacket. A foreline whose inner surface is coated with yttrium oxide or diamond-like carbon;
A plasma source coupled to the foreline,
The plasma source is
A body including an inlet fluidly coupled to the outlet, further including an inner surface, wherein the inner surface is coated with yttrium oxide or diamond-like carbon, and two between the inlet and the outlet A mitigation system comprising a flow dividing device arranged in the main body at a position where a flow path is formed.   The mitigation system of claim 4, wherein the body of the plasma source is made from quartz or aluminum oxide. A plasma generator disposed in a position operable to form a plasma within the body;
A cooling jacket configured to regulate the temperature of the plasma generator;
The mitigation system of claim 4 further comprising:   The mitigation system of claim 4, further comprising an inlet formed in the foreline.   The mitigation system of claim 4, wherein the foreline is attached to a vacuum processing chamber.   The mitigation system of claim 4, wherein the body includes a substantially spherical inner surface. A body including an inlet and an outlet;
An RF coil surrounding the body;
A channel formed within the body for fluidly coupling the inlet and the outlet, the inner surface of the channel being coated with yttrium oxide, diamond-like carbon, or aluminum oxide silicon magnesium yttrium When,
A plasma source.   The plasma source of claim 10, wherein the body is spherical and made of quartz or aluminum oxide.   The plasma source of claim 10, wherein the body is hollow.   The plasma source of claim 10, wherein the body is a unitary material.   The plasma source of claim 10, wherein the channel comprises a refracted portion.   The plasma source of claim 10, wherein the channel comprises at least two secondary channels connecting a plurality of parallel passages and adjacent passages.

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