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JP2017500743A - 低雑音の量子的検出素子およびそのような光子検出素子の製造方法 - Google Patents

低雑音の量子的検出素子およびそのような光子検出素子の製造方法 Download PDF

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Publication number
JP2017500743A
JP2017500743A JP2016541002A JP2016541002A JP2017500743A JP 2017500743 A JP2017500743 A JP 2017500743A JP 2016541002 A JP2016541002 A JP 2016541002A JP 2016541002 A JP2016541002 A JP 2016541002A JP 2017500743 A JP2017500743 A JP 2017500743A
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Prior art keywords
detection element
layer
wavelength
photon detection
semiconductor
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JP2016541002A
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English (en)
Japanese (ja)
Inventor
ポーティエール、ベンジャミン
ヴェルドゥン、ミカエル
ハイダル、リアド
ペロード、ジーン−リュック
パルド、ファブリセ
Original Assignee
セントレ ナショナル デ ラ ルシェルシェ サイエンティフィック−シーエヌアールエス
セントレ ナショナル デ ラ ルシェルシェ サイエンティフィック−シーエヌアールエス
オフィス ナショナル デチュード エ ド ルシェルシュ アエロスパティアル−オーエヌイーアールエー
オフィス ナショナル デチュード エ ド ルシェルシュ アエロスパティアル−オーエヌイーアールエー
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Application filed by セントレ ナショナル デ ラ ルシェルシェ サイエンティフィック−シーエヌアールエス, セントレ ナショナル デ ラ ルシェルシェ サイエンティフィック−シーエヌアールエス, オフィス ナショナル デチュード エ ド ルシェルシュ アエロスパティアル−オーエヌイーアールエー, オフィス ナショナル デチュード エ ド ルシェルシュ アエロスパティアル−オーエヌイーアールエー filed Critical セントレ ナショナル デ ラ ルシェルシェ サイエンティフィック−シーエヌアールエス
Publication of JP2017500743A publication Critical patent/JP2017500743A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2016541002A 2013-12-17 2014-12-17 低雑音の量子的検出素子およびそのような光子検出素子の製造方法 Pending JP2017500743A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1362842A FR3015113B1 (fr) 2013-12-17 2013-12-17 Element de detection quantique a faible bruit et procede de fabrication d'un tel element de photodetection
FR1362842 2013-12-17
PCT/EP2014/078329 WO2015091709A1 (fr) 2013-12-17 2014-12-17 Elément de détection quantique à faible bruit et procédé de fabrication d'un tel élément de photodétection

Publications (1)

Publication Number Publication Date
JP2017500743A true JP2017500743A (ja) 2017-01-05

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JP2016541002A Pending JP2017500743A (ja) 2013-12-17 2014-12-17 低雑音の量子的検出素子およびそのような光子検出素子の製造方法

Country Status (6)

Country Link
US (1) US9755090B2 (fr)
EP (1) EP3084843B1 (fr)
JP (1) JP2017500743A (fr)
CN (1) CN105981179B (fr)
FR (1) FR3015113B1 (fr)
WO (1) WO2015091709A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019125699A (ja) * 2018-01-16 2019-07-25 日本電気株式会社 赤外線検出素子、赤外線検出器及び赤外線検出素子の製造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3015113B1 (fr) * 2013-12-17 2018-06-01 Centre National De La Recherche Scientifique- Cnrs Element de detection quantique a faible bruit et procede de fabrication d'un tel element de photodetection
EP3261130B1 (fr) * 2016-06-20 2020-11-18 ams AG Dispositif photodétecteur à polariseur de grille à fort contraste intégré
FR3069956B1 (fr) * 2017-08-03 2019-09-06 Thales Detecteur infrarouge ameliore
FI3769343T3 (fi) * 2018-03-22 2023-09-01 Iee Sa Valoilmaisin
FR3083645B1 (fr) 2018-07-05 2020-07-31 Thales Sa Detecteur bi-spectral ameliore
CN109411500B (zh) 2018-10-31 2021-01-22 京东方科技集团股份有限公司 探测面板及其制作方法
TWI835924B (zh) * 2019-11-18 2024-03-21 晶元光電股份有限公司 光偵測元件
TWI872948B (zh) * 2019-11-18 2025-02-11 晶元光電股份有限公司 光偵測元件
FR3118288B1 (fr) * 2020-12-23 2022-12-30 Thales Sa Integration d'un circuit de detection a base de resonateurs optiques interconnectes sur un circuit de lecteure d'un imageur
FR3141283A1 (fr) * 2022-10-20 2024-04-26 Thales Procédé de fabrication de photodiodes à hétérojonctions durcies aux irradiations
FR3155601A1 (fr) * 2023-11-22 2025-05-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optique

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1054758A (ja) * 1996-05-13 1998-02-24 Commiss Energ Atom 回折格子を有した共振光学構造光電検出器
JP2002506567A (ja) * 1997-06-11 2002-02-26 ハネウエル・インコーポレーテッド 光電子デバイスの性能を改善し、可用性を高めた共振反射器
US6423980B1 (en) * 1999-06-25 2002-07-23 California Institute Of Technology Multi-directional radiation coupling in quantum-well infrared photodetectors
JP2008288293A (ja) * 2007-05-16 2008-11-27 Nippon Telegr & Teleph Corp <Ntt> 半導体受光素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455421A (en) * 1985-08-13 1995-10-03 Massachusetts Institute Of Technology Infrared detector using a resonant optical cavity for enhanced absorption
FR2741483B1 (fr) * 1995-11-21 1998-01-02 Thomson Csf Dispositif optoelectronique a puits quantiques
FR2970599B1 (fr) 2011-01-17 2012-12-28 Commissariat Energie Atomique Photodetecteur optimise par une texturation metallique agencee en face arriere
US8941203B2 (en) 2012-03-01 2015-01-27 Raytheon Company Photodetector with surface plasmon resonance
FR3015113B1 (fr) * 2013-12-17 2018-06-01 Centre National De La Recherche Scientifique- Cnrs Element de detection quantique a faible bruit et procede de fabrication d'un tel element de photodetection

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1054758A (ja) * 1996-05-13 1998-02-24 Commiss Energ Atom 回折格子を有した共振光学構造光電検出器
JP2002506567A (ja) * 1997-06-11 2002-02-26 ハネウエル・インコーポレーテッド 光電子デバイスの性能を改善し、可用性を高めた共振反射器
US6423980B1 (en) * 1999-06-25 2002-07-23 California Institute Of Technology Multi-directional radiation coupling in quantum-well infrared photodetectors
JP2008288293A (ja) * 2007-05-16 2008-11-27 Nippon Telegr & Teleph Corp <Ntt> 半導体受光素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ZOHAR，M. ET AL.: "Resonance Cavity Enhanced Midinfrared Photodetectors Employing Subwavelength Grating", IEEE NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, JPN6018042067, 2011, pages 25 - 26, XP032056451, DOI: doi:10.1109/NUSOD.2011.6041118 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019125699A (ja) * 2018-01-16 2019-07-25 日本電気株式会社 赤外線検出素子、赤外線検出器及び赤外線検出素子の製造方法
JP7052362B2 (ja) 2018-01-16 2022-04-12 日本電気株式会社 赤外線検出素子、赤外線検出器及び赤外線検出素子の製造方法

Also Published As

Publication number Publication date
WO2015091709A1 (fr) 2015-06-25
EP3084843B1 (fr) 2021-01-27
CN105981179A (zh) 2016-09-28
EP3084843A1 (fr) 2016-10-26
FR3015113B1 (fr) 2018-06-01
CN105981179B (zh) 2017-11-24
FR3015113A1 (fr) 2015-06-19
US9755090B2 (en) 2017-09-05
US20160322516A1 (en) 2016-11-03

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