JP2017220622A - Processing method of semiconductor wafer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a processing method of a semiconductor wafer for fixing the semiconductor wafer to a support material quickly and reliably so as not to be peeled off therefrom, and for peeling the semiconductor wafer from the support material quickly after processing, when performing backside polishing or cutting of the semiconductor wafer.SOLUTION: A processing method of a semiconductor wafer has an adhesion process for fixing the semiconductor wafer to a glass substrate, consisting of coating the glass substrate having surface roughness of Ra0.010-1.000 with an adhesive composition containing at least a siloxane compound having a photopolymerizable group, a photoinitiator and a blowing agent, adhering the semiconductor wafer to an adhesive surface thus formed, and then irradiating the adhesive composition with high energy light and hardening, a processing process for processing the semiconductor wafer thus fixed, and a peeling process for peeling the semiconductor wafer from the glass substrate by heating the hardened adhesive composition, and blowing the blowing agent in the adhesive composition.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a method for processing a semiconductor wafer. In particular, in the manufacture of electronic devices such as integrated circuits (Integrated Circuits, hereinafter referred to as IC) and micromachines (Micro Electro Mechanical Systems, hereinafter referred to as MEMS), a fine circuit pattern on a silicon substrate or the like. The present invention relates to a method for processing a semiconductor wafer that is useful when processing a semiconductor wafer on which is formed.

  In recent years, in the manufacture of electronic devices such as ICs or MEMS, in order to reduce the size and increase the integration of electronic devices, a semiconductor wafer having a fine circuit pattern formed on a silicon substrate or the like is manufactured in a subsequent process. Further processing such as backside polishing and cutting is often performed.

  For example, a back grind (back surface polishing) step of thinly polishing a semiconductor wafer in a subsequent step may be required. In the back grinding process, the semiconductor wafer is polished by polishing the back side that has not been subjected to circuit processing or the like while the circuit side (front side) side of the semiconductor wafer is fixed to the back grinding tape (hereinafter sometimes referred to as BG tape). Thin the wafer. At this time, adhesion and peeling of the BG tape to the semiconductor wafer are performed using a laminator and a remover which are dedicated devices. When a semiconductor wafer is peeled off from a state in which it is fixed to a BG tape, there are types of BG tape that irradiate ultraviolet rays at the time of peeling, and types that do not irradiate. An adhesive tape is disclosed.

  However, even if a semiconductor wafer processing adhesive tape is used, if the semiconductor wafer is polished in a state of being fixed to the BG tape and thinned to, for example, less than 100 μm, the semiconductor wafer is warped or contracted, and the yield of the back surface polishing process is increased. There are concerns about a decline.

  Further, in a dicing process in which a semiconductor wafer thinned by backside polishing is cut into chips, an operation of fixing the backside of the semiconductor wafer to a dicing tape (hereinafter sometimes referred to as DC tape) may be performed. For example, Patent Document 2 discloses a DC tape for semiconductor processing.

  However, when a DC tape for semiconductor processing is used, for example, there may be a difficulty in the operation itself of adhering and fixing a wafer thinned to less than 100 μm to the tape.

  In addition, electrode thinning may be performed by photolithography or etching while the thinned semiconductor wafer is adhered and fixed to a BG tape or DC tape. The base material of BG tape and DC tape is usually ethylene / vinyl acetate copolymer (EVA) or polyethylene terephthalate (PET), but these base materials are excellent in heat resistance, etching resistance and solvent resistance. There was a problem that the semiconductor wafer was peeled off from the tape.

  Patent Documents 3 to 5 include a silicon compound having a photopolymerizable group, a photopolymerization initiator, and a foaming agent, and the photopolymerizable group is an acryloyl group, a methacryloyl group, a vinyl group, an epoxy group, an oxetane group, and a vinyl ether. An adhesive composition which is a photopolymerizable group containing at least one group selected from the group consisting of groups is disclosed.

  Patent Documents 3 to 5 disclose a method in which an adhesive composition is sandwiched between a silicon substrate and a glass substrate, cured by light irradiation to adhere the silicon substrate and the glass substrate, and then peeled off. As a means for selectively peeling between the adhesive composition and the adhesive composition, it is disclosed that a hydrolysis condensate of an alkoxysilane having a photopolymerizable group is previously applied to an adhesive surface of a glass substrate and heated. .

Japanese Patent Laying-Open No. 2015-185692 JP 2013-98224 A JP 2014-40574 A JP 2014-40575 A Pamphlet of International Publication WO2014 / 017294

  According to the semiconductor wafer processing method of the present invention, when processing such as polishing and cutting is performed with the semiconductor wafer fixed to the support material, the semiconductor wafer is quickly and reliably applied to the support material so that the semiconductor wafer is not peeled off from the support material. It is an object of the present invention to provide a method for processing a semiconductor wafer, which can be fixed and quickly peeled off from a support material after processing.

  Furthermore, in the method for processing a semiconductor wafer according to the present invention, when the semiconductor wafer is peeled off from the support material after the semiconductor wafer and the support material are bonded via the adhesive composition, the residue of the adhesive composition on the semiconductor wafer. An object of the present invention is to provide a method for processing a semiconductor wafer that does not leave the mark.

  The present inventors have intensively studied to solve the above-mentioned problems, and “a siloxane compound having a photopolymerizable group on a glass substrate having a surface roughness of Ra 0.010 or more and 1.000 or less, a photopolymerization initiator, and foaming. An adhesive composition containing at least an agent is applied, the semiconductor wafer is adhered to the formed adhesive surface, and then the adhesive composition is irradiated with high energy light to be cured. The bonding step for fixing, the processing step for processing the fixed semiconductor wafer, and heating the cured adhesive composition to foam the foaming agent in the adhesive composition to peel the semiconductor wafer from the glass substrate A method of processing a semiconductor wafer having a peeling step.

  In the method for processing a semiconductor wafer of the present invention, by using “a glass substrate having a surface roughness Ra of 0.010 or more and 1.000 or less” as a support material, Strong adhesion between glass substrate and semiconductor wafer without pretreatment of glass substrate by sol-gel method including pre-application of hydrolysis condensate of alkoxysilane having polymerizable group to the adhesion surface of glass substrate Strength could be obtained. Thus, in the semiconductor wafer processing method of the present invention, after the semiconductor wafer is bonded and fixed to a glass substrate having a surface roughness of Ra 0.010 to 1.000, Perform cutting.

  Furthermore, it becomes possible to exfoliate the semiconductor wafer from the glass substrate quickly and without leaving a residue on the semiconductor wafer by foaming the foaming agent in the adhesive composition that has been heated and cured after these processes.

  The present invention includes the following inventions 1-4.

[Invention 1]
An adhesive surface formed by applying an adhesive composition containing at least a siloxane compound having a photopolymerizable group, a photopolymerization initiator, and a foaming agent to a glass substrate having a surface roughness of Ra 0.010 to 1.000. Bonding the semiconductor wafer to the glass substrate, and then curing the adhesive composition by irradiating the adhesive composition with high energy light, and fixing the semiconductor wafer to the glass substrate;
A processing step of processing the fixed semiconductor wafer;
Heating the cured adhesive composition, foaming the foaming agent in the adhesive composition, and having a peeling step of peeling the semiconductor wafer from the glass substrate,
Semiconductor wafer processing method.

[Invention 2]
The processing method of a semiconductor wafer according to invention 1, wherein the processing performed in the processing step is backside polishing or cutting of the semiconductor wafer.

[Invention 3]
Invention 1 or 2 wherein the photopolymerizable group of the siloxane compound is a photopolymerizable group containing at least one group selected from the group consisting of acryloyl group, methacryloyl group, vinyl group, epoxy group, oxetane group and vinyl ether group. Semiconductor wafer processing method.

[Invention 4] The semiconductor wafer processing method of Inventions 1 to 3, wherein the siloxane compound is a hydrolysis-condensation product of alkoxysilane.

  The method for processing a semiconductor wafer according to the present invention cures the adhesive composition by irradiating the adhesive composition between the glass substrate as the support material and the semiconductor wafer as the work material with high energy light, thereby quickly and reliably. The semiconductor wafer can be fixed to the glass substrate. Furthermore, the semiconductor wafer processing method of the present invention can reduce the residue of the adhesive composition remaining on the semiconductor wafer when the semiconductor wafer is peeled from the glass substrate.

It is explanatory drawing of adhesion | attachment and peeling operation | movement of a glass substrate and a semiconductor wafer, (A) is the schematic before bonding, (B) is the schematic after adhesion, (C) is the schematic after grinding | polishing. Yes, (D) is a schematic view after peeling.

1. Semiconductor wafer processing method The method of processing a semiconductor wafer according to the invention is as follows: a glass substrate having a surface roughness of Ra 0.010 or more and 1.000 or less, a siloxane compound having a photopolymerizable group, a photopolymerization initiator and a foaming agent. The semiconductor wafer is fixed to a glass substrate by applying an adhesive composition containing at least, adhering the semiconductor wafer to the formed adhesive surface, and then curing the adhesive composition by irradiating with high energy light. Bonding step, processing step for processing the fixed semiconductor wafer, and peeling the semiconductor wafer from the glass substrate by heating the cured adhesive composition and foaming the foaming agent in the adhesive composition A method of processing a semiconductor wafer having a process. "

  Hereinafter, the bonding step and the peeling step in the semiconductor wafer processing method of the present invention will be described with reference to FIG. 1, but the embodiment of the semiconductor wafer processing method of the present invention is not limited to FIG.

  FIG. 1 is an explanatory diagram of a bonding process and a peeling process of a glass substrate and a semiconductor wafer, (A) is a schematic diagram before bonding, (B) is a schematic diagram after bonding, and (C) is polished. It is a schematic diagram after, (D) is the schematic diagram after peeling.

  As shown in FIG. 1A, the adhesive composition 1 is disposed so as to be sandwiched between a glass substrate G as a support material and a semiconductor wafer W to be processed, and the laminated state shown in FIG. After that, the glass substrate G and the semiconductor wafer W are bonded to each other by irradiating the adhesive composition layer 1 with high energy light.

  Next, as shown in FIG. 1C, the back side 2 of the semiconductor wafer W is polished, the semiconductor wafer W is thinned, and after cutting (not shown) or the like, heating is performed. As shown, the adhesive composition layer 1 is heated to foam, the semiconductor wafer W is peeled off, and the processing of the semiconductor wafer W is completed.

1-1. Adhesion Step The adhesion step in the method for processing a semiconductor wafer of the present invention comprises a photopolymerizable group on a glass substrate G having a surface roughness Ra of 0.010 or more and 1.000 or less for supporting the semiconductor wafer W. The adhesive composition 1 containing at least a siloxane compound having a photopolymerization initiator and a foaming agent is applied, the semiconductor wafer W is adhered to the formed adhesive surface, and then the adhesive composition 1 is irradiated with high-energy light. In this process, the semiconductor wafer W is fixed to the glass substrate G.

  In the bonding process, the glass substrate G and the semiconductor wafer W can be bonded to each other with the adhesive composition 1 quickly by irradiation with high energy light. For example, after the adhesive composition 1 is disposed between the glass substrate G as the support material and the semiconductor wafer W as the processing material, the adhesive composition 1 is cured by irradiating the glass substrate G side with high energy light. By doing so, the glass substrate G and the semiconductor wafer W can be reliably bonded.

  In the bonding step in the semiconductor wafer processing method of the present invention, the coating method for applying the adhesive composition 1 to the bonding surface of the glass substrate G to form the adhesive composition layer 1 includes spin coating and roll coating. Method, slit coating method, bar coating method, screen printing method or ink jet method. Alternatively, the adhesive composition layer 1 may be formed by applying the adhesive composition 1 with a dispenser. In addition, if the pattern by the adhesive composition layer 1 is formed in the glass substrate G after application | coating by the screen-printing method using a bar-coat method or a squeegee, the metal mask which provided the location which apply | coats and the location which is not apply | coated is used. Thus, a pattern can also be formed.

  As shown in FIG. 1B, the adhesive composition layer 1 is disposed between the glass substrate G and the semiconductor wafer W, and the glass substrate G side opposite to the adhesive composition layer 1 is disposed. Adhesion is performed by irradiating with high energy light. When the adhesive composition layer 1 is irradiated with high energy light, the polymerization reaction proceeds by the action of the photopolymerization initiator included in the adhesive composition layer 1, and the adhesive composition layer 1 is cured. The glass substrate G and the semiconductor wafer W are bonded.

  When bonding, the wavelength and illuminance of the high-energy light may be selected in consideration of the absorption wavelength and sensitivity of the photopolymerization initiator, and are not particularly limited. In consideration of the above, it is easy to use ultraviolet to blue light having a wavelength of 200 nm or more and 470 nm or less. For example, when 2-hydroxy-2-methyl-1-phenylpropan-1-one (Ciba Specialty Chemicals Co., Ltd., trade name, Darocur 1173) is used as a photopolymerization initiator, UV light having a wavelength of 420 nm or less should be selected. That's fine. Preferably, ultraviolet light having a wavelength of 200 nm or more and 420 nm or less is easy to use, and high-pressure mercury lamps, ultra-high pressure mercury lamps, medium-pressure mercury lamps, low-pressure mercury lamps, metal halide lamps, xenon flash lamps, or ultraviolet light-emitting diodes (LED).

  When bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide (Ciba Specialty Chemicals Co., Ltd., trade name, Irgacure 819) is used as the photopolymerization initiator, the photopolymerization initiator is absorbed. Since it is also present on the long wavelength side, blue light such as a 470 nm blue LED can be used in addition to the above ultraviolet rays.

  In the bonding step, the adhesive composition 1 contains these photopolymerization initiators, and thus the adhesive composition layer 1 is irradiated with high energy light from the glass substrate G side. Therefore, the glass substrate G and the semiconductor wafer W can be quickly bonded at room temperature (about 20 ° C.).

1-2. Processing Step The processing step in the semiconductor wafer processing method of the present invention is a step of processing the semiconductor wafer W after the bonding step. For example, in the processing step in the semiconductor wafer processing method of the present invention, the back surface side of the semiconductor wafer W is subjected to processing such as polishing or cutting while the semiconductor wafer W is fixed to the glass substrate G in the bonding step. A process can be mentioned. Specifically, a back grinding (back surface polishing) step for thinly polishing the semiconductor wafer W for downsizing and high integration of an electronic device, or a dicing step for dividing the semiconductor wafer W thinned by the back surface polishing into chips is illustrated. be able to.

1-3. Peeling Step The peeling step in the semiconductor wafer processing method of the present invention is a step of peeling the semiconductor wafer W from the glass substrate G by foaming the foaming agent in the cured adhesive composition 1 after the processing step.

  The glass substrate G and the semiconductor wafer W bonded by the adhesive composition 1 in the bonding step are processed to foam the foaming agent in the adhesive composition 1 by heating in the peeling step after the semiconductor wafer W is processed in the processing step. Thus, the semiconductor wafer W and the adhesive composition layer 1 can be separated (peeled).

  In the semiconductor wafer processing method of the present invention, the surface roughness Ra of the adhesion surface of the glass substrate G is set to 0.010 or more and 1.000 or less, whereby the residue due to the adhesive composition 1 remaining on the semiconductor wafer W after peeling. Can be obtained.

  Since the semiconductor wafer W is securely bonded and fixed to the hard glass substrate G, it is possible to reduce the occurrence of cracks due to warping or shrinkage of the semiconductor wafer W during polishing or cutting of the semiconductor wafer W. Since the adhesive composition layer 1 is excellent in heat resistance, solvent resistance, and plasma resistance, processing such as photolithography is easy with the semiconductor wafer W fixed to the glass substrate G.

  As shown in (D) of FIG. 1, the adhesive composition layer 1 as an adhesion site is foamed by heating, and the semiconductor wafer W can be peeled from the glass plate G. This peeling is due to the action of the foaming agent contained in the adhesive composition layer 1. The adhesive composition layer 1 foams when the foaming agent in the adhesive composition layer 1 cured by light irradiation in the bonding step is heated and peels off between the semiconductor wafer W and the adhesive composition layer 1. Thus, the glass substrate G and the semiconductor wafer W are peeled off spontaneously. At that time, by setting the surface roughness Ra of the adhesion surface of the glass substrate G to 0.010 or more and 1.000 or less, the adhesive composition is formed on the semiconductor wafer W side so that the semiconductor wafer W does not need to be cleaned. It is expected that almost no residue of 1 remains. This means that the bonding between the glass substrate G and the adhesive composition layer 1 is achieved by selecting the glass substrate G having a surface roughness Ra of the adhesive surface of 0.010 or more and 1.000 or less. This is because it is much stronger than the combination of 1 and the semiconductor wafer W.

  In a state where the glass substrate G and the semiconductor wafer W are bonded, using a hot plate or an oven, the glass substrate G and the semiconductor are heated by heating to a temperature higher than the temperature at which the foaming agent starts to foam to foam the adhesive composition layer 1. Wafer W is peeled off. For example, when hydrazodicarbonamide (decomposition temperature: 245 ° C.) is used as the foaming agent, the peeling temperature is preferably near or above the foaming temperature, specifically 235 ° C. or higher and 260 ° C. or lower. . When azodicarbonamide (decomposition temperature: 200 ° C.) is used as the foaming agent, the peeling temperature is preferably 190 ° C. or higher and 220 ° C. or lower. When 4,4'-oxybis (benzenesulfonylhydrazide) (decomposition temperature 155 ° C to 165 ° C) is used as the blowing agent, the peeling temperature is preferably 145 ° C or higher and 180 ° C or lower. Furthermore, the decomposition temperature can be lowered by using a decomposition aid such as urea in an arbitrary ratio.

  By using these foaming agents and heating and foaming the adhesive composition layer 1, the glass substrate G and the semiconductor wafer W are spontaneously separated, and the surface roughness Ra of the adhesion surface is 0.010 or more and 1.000. When the following glass substrate G is selected, peeling occurs selectively between the adhesive composition layer 1 and the semiconductor wafer W, and the residue of the adhesive composition layer 1 does not remain on the semiconductor wafer W side, and almost all It adheres to the glass substrate G side, and the residue of the adhesive composition layer 1 does not adhere to the semiconductor wafer W side.

2. Adhesive Composition In the method for processing a semiconductor wafer of the present invention, the adhesive composition 1 has an adhesive strength that can withstand mechanical processing such as polishing and cutting the back surface of the semiconductor wafer W after being bonded to the glass substrate G in the processing step. After processing, the adhesive composition layer 1 needs to be easily peelable by foaming.

  The adhesive composition 1 used in the method for processing a semiconductor wafer of the present invention contains a siloxane compound having a photopolymerizable group. The photopolymerizable group of the siloxane compound is preferably a photopolymerizable group containing at least one group selected from the group consisting of acryloyl group, methacryloyl group, vinyl group, epoxy group, oxetane group and vinyl ether group. Moreover, the adhesive composition 1 used for the processing method of the semiconductor wafer of the present invention includes a photopolymerization initiator for initiating polymerization by light irradiation, and a foaming agent that generates gas by heating. In the adhesive composition 1 used in the method for processing a semiconductor wafer of the present invention, the siloxane compound is a compound having a skeleton of silicon and oxygen and has a siloxane bond (—Si—O—Si—). Also included are cyclic siloxane compounds.

  Hereinafter, each component of the adhesive composition 1 used in the method for processing a semiconductor wafer of the present invention will be described.

2-1. Siloxane compound having a photopolymerizable group As a siloxane compound having a photopolymerizable group, an alkoxysilane having a photopolymerizable group can be produced by a conventionally known sol-gel method and the raw material compound is easily available. The hydrolytic condensate 1 can be preferably used. The hydrolyzed condensate 1 of alkoxysilane having a photopolymerizable group is obtained by hydrolytic condensation using at least one or more types of alkoxysilanes represented by the following general formula (1) or general formula (2). The condensate obtained is preferable.

（式（１）中、Ｒ^１はそれぞれ独立にメチル基またはフェニル基であり、Ｒ^２はそれぞれ独立にメチル基またはエチル基であり、ｘは０〜３の整数である。）

(In Formula (1), R ¹ is each independently a methyl group or a phenyl group, R ² is each independently a methyl group or an ethyl group, and x is an integer of 0-3.)

（式（２）中、Ｒ^３は光重合性基であり、Ｒ^４はそれぞれ独立にメチル基またはエチル基であり、Ｒ^３はそれぞれ独立にアクリロイル基、メタクリロイル基、ビニル基、エポキシ基、オキセタン基およびビニルエーテル基からなる群から選ばれる少なくとも１種の基を含む光重合性基であり、ｘは１〜３の整数である。）
例えば、式（１）で表わされるアルコキシシランとしてのフェニルトリメトキシシラン（Ｒ^１＝フェニル基、Ｒ^２＝メチル基、ｘ＝１）またはジメチルジエトキシシラン（Ｒ^１＝メチル基、Ｒ^２＝エチル基、ｘ＝２）、および式（２）で表わされるアルコキシシランとしての３−（トリメトキシシリル）プロピルメタクリレート（Ｒ^３＝プロピルメタクリレート基、Ｒ^４＝メチル基、ｘ＝１）から得られる加水分解縮合物は、以下に示した部分構造を有しているものと考えられる。尚、図中の波線は、その先も結合が連続していることを意味する。

(In Formula (2), R ³ is a photopolymerizable group, R ⁴ is each independently a methyl group or an ethyl group, and R ³ is each independently an acryloyl group, a methacryloyl group, a vinyl group, an epoxy group, or an oxetane. A photopolymerizable group containing at least one group selected from the group consisting of a group and a vinyl ether group, and x is an integer of 1 to 3.)
For example, phenyltrimethoxysilane (R ¹ = phenyl group, R ² = methyl group, x = 1) or dimethyldiethoxysilane (R ¹ = methyl group, R ² = ethyl) as the alkoxysilane represented by the formula (1) Group, x = 2), and water obtained from 3- (trimethoxysilyl) propyl methacrylate (R ³ = propyl methacrylate group, R ⁴ = methyl group, x = 1) as an alkoxysilane represented by formula (2) The decomposition condensate is considered to have the partial structure shown below. In addition, the wavy line in a figure means that the coupling | bonding is continuing.

2-2. Photopolymerization initiator The photopolymerization initiator contained in the adhesive composition 1 used in the method for processing a semiconductor wafer of the present invention generates radicals or cations upon irradiation with visible light or ultraviolet light. With the generated radicals or cations as starting points, polymerization starts and the adhesive composition 1 is polymerized and cured, whereby a substrate or the like can be bonded.

  As the photopolymerization initiator, it is preferable to use a photoradical polymerization initiator or a photocationic polymerization initiator. The photopolymerizable initiator is selected depending on the type of photopolymerizable group contained in the siloxane compound. When the polymerizable group is an acryloyl group, a methacryloyl group and a vinyl group, it is preferable to use a photoradical polymerization initiator. When the polymerizable group is an epoxy group, an oxetane group and a vinyl ether group, a photocationic polymerization initiator is used. It is preferable to use it.

  In radical photopolymerization initiators, radicals are generated by combining an intramolecular cleavage type in which intramolecular bonds are cleaved by absorption of high-energy light to generate radicals, and hydrogen donors such as tertiary amines and ethers. There are hydrogen extraction molds that produce In the adhesive composition 1 of the present invention, the photoradical polymerization initiator only needs to generate radicals by absorbing light and polymerize the siloxane compound having the photopolymerizable group.

  For example, 2-hydroxy-2-methyl-1-phenylpropan-1-one (trade name Darocur 1173, manufactured by Ciba Specialty Chemicals Co., Ltd.), which is an intramolecular cleavage type, is irradiated with light (particularly, wavelengths of 200 nm or more and 420 nm). Radicals are generated by the cleavage of the carbon-carbon bond by the following ultraviolet light).

  As the hydrogen abstraction type, benzophenone, methyl orthobenzoin benzoate, 4-benzoyl-4'-methyldiphenyl sulfide, camphor-quinone, or the like generates a radical by a bimolecular reaction with a hydrogen donor.

  By the action of these radicals, the double bond of acryloyl group, methacryloyl group or vinyl group is cleaved and polymerized.

  In addition, a commercially available radical photopolymerization initiator can be used. For example, from photo radical polymerization initiator Darocur series manufactured by Ciba Specialty Chemicals Co., Ltd., 2-hydroxy-2-methyl-1-phenyl-propan-1-one (trade name, Darocur 1173), Darocur TPO or From Irgacure series, 2-hydroxy-1- {4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl} -2-methyl-propan-1-one (trade name Irgacure 127) 1-hydroxy-cyclohexyl-phenyl-ketone (trade name, Irgacure 184), 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1-propan-1-one (product Name, Irgacure 2959), 2-benzyl-2-dimethyl Amino-1- (4-morpholinophenyl) -butanone-1 (trade names, Irgacure 369, Irgacure 379), 2- (dimethylamino) -2-[(4-methylphenyl) methyl] -1- [4- (4-Morpholinyl) phenyl] -1-butanone (trade name, Irgacure 379EG), oxyphenylacetic acid and 2- [2-oxo-2-phenylacetoxyethoxy] ethyl ester, oxyphenylacetic acid and 2- (2-hydroxyethoxy) ) A mixture of ethyl esters (trade name, Irgacure 754), 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one (trade names, Irgacure 907, Irgacure 1700, Irgacure 1800, Irgacure 1850 , Irg cure 1870), bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide (trade name, Irgacure 819), bis (η5-2,4-cyclopentadien-1-yl) -bis (2,6- Difluoro-3- (1H-pyrrol-1-yl) -phenyl) titanium (trade names, Irgacure 784, Irgacure 4265) can be used.

  A cationic photopolymerization initiator is a compound that generates an acid catalyst that initiates cationic polymerization upon irradiation with high-energy light, and particularly those having a chemical structure of an onium salt are useful in terms of storage stability and heat resistance. .

  As a commercially available photocationic polymerization initiator, triphenylsulfonium hexafluoroantimonate (manufactured by Midori Chemical Co., Ltd., trade name TPS103) or bis (4-tert-butylphenyl) iodonium hexafluoroantimonate (manufactured by Midori Chemical Co., Ltd.) Trade name BBI-103).

  In the adhesive composition 1 used in the method for processing a semiconductor wafer of the present invention, a photosensitizer can be added for the purpose of improving the light absorption efficiency of the photopolymerization initiator. As a photosensitizer, for example, anthracene, 2-ethyl-9,10-dimethoxyanthracene or 2-isopropylthioxanthone can be used. Moreover, as a commercially available sensitizer, Nippon Kayaku Co., Ltd. make, a brand name, KAYACURE DETX-S can be mentioned.

2-3. Foaming agent As the foaming agent contained in the adhesive composition 1 used in the method for processing the semiconductor wafer W of the present invention, it is preferable to use a foaming agent that generates gas when heated. The foaming agent includes a compound that changes its chemical structure by heating and generates gas, a compound that generates gas by desorption of adsorbing components, or a gas that has a thermally unstable chemical bond and decomposes by heating. Examples include organic compounds that are generated. By selecting a foaming agent having a desired foaming temperature, the temperature at which the substrate is peeled can be adjusted to a desired temperature. In particular, the temperature at which the semiconductor wafer W is spontaneously peeled from the glass substrate G can be adjusted to a desired temperature.

  The foaming agent that changes its chemical structure by heating and foams is classified into an organic compound and an inorganic compound. Examples of organic compounds include hydrazodicarbonamide (trade name Cellmic 142, manufactured by Sankyo Kasei Co., Ltd.) that generates nitrogen and ammonia at about 245 ° C., and azodicarbon that generates nitrogen and carbon dioxide at about 200 ° C. Amide (manufactured by Sankyo Kasei Co., Ltd., trade name Celmice CE), N, N′-dinitrosopentamethylenetetramine (product name: Cellular D) produced by Eiwa Kasei Kogyo Co., Ltd., which generates nitrogen in the vicinity of 200 ° C., 160 ° C. Examples thereof include 4,4′-oxybis (benzenesulfonylhydrazide) (produced by Eiwa Kasei Kogyo Co., Ltd., trade name Neoselbon) that generates nitrogen and the like in the vicinity. Examples of the inorganic compound include sodium hydrogen carbonate that generates carbon dioxide at 140 ° C. or higher. Moreover, as a commercially available foaming agent, the product made by Eiwa Kasei Kogyo Co., Ltd. which generates nitrogen at around 325 ° C., trade name Cell Tetra BHT-2NH3, or the product made by Eiwa Kasei Kogyo Co., Ltd. which generates nitrogen at around 350 ° C. PIPE can be mentioned.

  Examples of the compound that desorbs adsorbed components by heating to generate gas include zinc borate (trade name FireBreak ZB, manufactured by Hayakawa Shoji Co., Ltd.) that separates adsorbed water and generates water vapor at about 300 ° C. It can be used as an agent.

2-4. Other Additives The adhesive composition 1 used in the semiconductor wafer processing method of the present invention has a polar group for the purpose of controlling the adhesive force such as improving the adhesive force between the semiconductor wafer W and the adhesive composition 1. A compound may be added. For example, methacrylic acid (2-hydroxyethyl), pentaerythritol triacrylate (manufactured by Osaka Organic Chemical Industry Co., Ltd., trade name biscoat # 300), epoxy acrylate (manufactured by Osaka Organic Chemical Industry Co., Ltd., trade name biscoat # 540), tri (2-acryloyloxyethyl) phosphate (Osaka Organic Chemical Co., Ltd., trade name biscoat 3PA), or bis (2-methacryloyloxyethyl) phosphate ester (Nippon Kayaku Co., Ltd., trade name KAYAMER PM-2) By adding a compound having a polar group such as the above, stronger adhesion becomes possible.

  The compound is preferably added in an amount of 1% by mass to 40% by mass with respect to the total mass of the adhesive composition 1. If it is less than 1% by mass, there is no effect of improving the adhesive force, it is not necessary to add more than 40% by mass, and the action of the siloxane compound having a photopolymerizable group, the photopolymerization initiator, and the foaming agent may be inhibited. .

  Further, for the purpose of adjusting the viscosity of the adhesive composition 1, silica that is inorganic fine particles may be added to the adhesive. For example, the Aerosil series manufactured by Nippon Aerosil Co., Ltd., the Leolo Seal series manufactured by Tokuyama Co., Ltd., etc. may be mentioned. The compound is preferably added in an amount of 0.01% by mass to 10% by mass with respect to the total mass of the adhesive composition 1.

2-5. Composition ratio of adhesive composition Adhesive composition 1 used in the method for processing semiconductor wafer W of the present invention contains a siloxane compound having a photopolymerizable group, a photopolymerization initiator, and a foaming agent. The hydrolysis condensate having a photopolymerizable group, the photopolymerization initiator, and the foaming agent are expressed in terms of mass%, and the hydrolysis condensate: photopolymerization initiator: foaming agent = 50% to 98%: 1% to It is preferably within the range of 10%: 1% to 49%. Outside this range, defects such as weak adhesive strength and excessive foaming tend to occur.

3. Glass substrate A glass substrate G having a surface roughness Ra of an adhesion surface of 0.010 or more and 1.000 or less is used as a support material for the semiconductor wafer W used in the method for processing a semiconductor wafer of the present invention.

  Examples of the material for the glass substrate G include soda lime silicate glass, non-alkali glass, and borosilicate glass, preferably soda lime silicate glass and non-alkali glass. Use of alkali-free glass is preferred because it does not contain an alkali component that may immerse the semiconductor wafer W and has a track record of use in semiconductor manufacturing. However, soda lime silicate glass may be used as long as it does not affect the semiconductor wafer W during processing. In the semiconductor wafer processing method of the present invention, in order to obtain strong adhesion between the glass plate G and the adhesive composition layer 1, the glass substrate G having a surface roughness Ra of 0.010 to 1.000. Is used as a support material. When a glass substrate G having a Ra of 0.010 or more and 1.000 or less is used, peeling is performed with the adhesive composition layer 1 by increasing the adhesive strength between the glass substrate G and the adhesive composition layer 1 during bonding. The adhesive composition layer 1 residue is selectively generated between the semiconductor wafers W, and the residue of the adhesive composition layer 1 does not remain on the semiconductor wafer W side, and almost all adheres to the glass substrate G side. There is an effect that it does not adhere to the wafer W side.

  When the surface roughness Ra of the glass substrate G is 0.010 or more and 1.000 or less, the bonding surface of the glass substrate G becomes a rough surface at the bonding interface between the glass substrate G and the adhesive composition layer 1. Thereby, with respect to the adhesive surface 2 of the adhesive composition layer 1, the cured product exhibits an anchor effect, and the mechanical adhesive strength of the adhesive composition layer 1 to the glass substrate G is improved. When Ra is less than 0.010, the effect of selectively adhering the residue of the adhesive composition layer 1 to the glass substrate G is not sufficiently obtained. When Ra exceeds 1.000, the glass substrate G The mechanical strength of the glass substrate G is reduced, and the glass substrate G is easily cracked.

  Adhesive composition layer 1 is mainly composed of a siloxane compound and contains siloxane bonds and SiOH, and the surface of glass substrate G also contains siloxane bonds and SiOH. Therefore, adhesion composition layer 1 and glass substrate G are bonded. At the interface, it can be expected to improve the adhesion force due to intermolecular force or OH group hydrogen bond. These effects are particularly effective when the surface roughness Ra of the glass substrate G is 0.010 or more and 1.000 or less due to the large adhesion area. In the peeling step, the adhesive composition is applied to the semiconductor wafer W. The effect of leaving no residue of 1 can be obtained.

  The surface roughness is a roughness curve obtained by extracting only the reference length from the roughness curve in the direction of the average line, taking the X axis in the direction of the average line of the extracted portion, and the Y axis in the direction of the vertical magnification. When y is expressed as y = f (x), the value obtained by the following formula is expressed in micrometers (μm). JIS B 0601: 2013 “Product Geometric Specification (GPS) —Surface Properties” : Contour curve method-terms, definitions and surface texture parameters ".

  The glass substrate G having a surface roughness Ra of 0.010 or more and 1.000 or less can be manufactured by a known method. Known methods include sand blasting, surface polishing, chemical etching, or sol-gel methods.

  The glass substrate G having a surface roughness Ra of 0.010 or more and 1.000 or less, which is used in the method for processing a semiconductor wafer of the present invention, can be easily manufactured by the sand blast method, and a glass substrate G manufactured by the sand blast method should be used. preferable. A commercially available glass substrate G whose surface roughness is adjusted by the sandblasting method can also be obtained. In order to prevent damage during processing of the semiconductor wafer W in the semiconductor wafer processing method of the present invention, the chemical etching method is further used in combination to reduce microcracks formed on the glass surface. It is preferable to improve the mechanical strength.

The sand blasting method is a method of processing a substrate surface by causing abrasive particles to collide with the substrate surface. Specifically, by releasing compressed air, hard fine particles such as aluminum oxide Al ₂ O ₃ are sprayed on the glass substrate G as a base material, and pressure is applied to the glass substrate G so as to collide with the glass substrate G surface. The method of forming unevenness | corrugation is mentioned, The surface roughness of the glass substrate G can be adjusted with the particle diameter and quantity of the particle to collide, a pressure, spraying time, etc.

  The surface polishing method is a method of processing the substrate surface by rubbing abrasive particles such as silicon carbide SiC particles on the substrate surface. Specifically, there is a method in which fine particles are rubbed against the glass substrate G with a rotating brush or a rotating sponge to form irregularities on the surface of the glass substrate G. The rotation speed of the brush or sponge, the pressure during rubbing, The surface roughness of the glass substrate G can be adjusted by changing the particle diameter.

  The chemical etching method is a method of changing the surface of a base material by utilizing the corrosive (etching) action of a chemical such as acid or alkali. Specifically, the glass substrate is a base material using hydrofluoric acid or hydrofluoric acid. In this method, the surface of the glass substrate G is etched by immersing G.

  The sol-gel method is a method in which a silica compound or metal alkoxide dispersion or solution is uniformly applied to a glass substrate G as a base material, and then dried and fired to obtain a sol-gel film on the surface of the glass substrate G. The surface roughness of the glass substrate G can be adjusted by changing the particle size or type of the compound, the type of the metal alkoxide, and the like.

4). Semiconductor wafer The semiconductor wafer W used in the method for processing a semiconductor wafer of the present invention may be any ordinary material used for semiconductor production. Specifically, a silicon substrate, a gallium nitride (GaN) substrate that is a compound semiconductor A silicon carbide (SiC) substrate or a sapphire substrate can be exemplified, and any substrate may be used.

  These adhesion surfaces of the semiconductor wafer W may be covered with a photoresist film or a coating film on the semiconductor surface, and metal wirings, electrodes, or the like may be formed thereon. In the present invention, the back surface means the surface of the unprocessed semiconductor substrate itself.

  The method for processing a semiconductor wafer of the present invention will be specifically described with reference to examples, but the present invention is not limited to these examples.

Example 1
<Preparation of hydrolysis-condensation product of alkoxysilane having photopolymerizable group>
In a 2 L flask equipped with a Dimroth and a stirring blade, 79.29 g of phenyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name KBM-103), dimethyldiethoxysilane (Shin-Etsu Chemical) at room temperature (about 20 ° C.) Kogyo Co., Ltd., trade name KBM-22) 48.08 g, 3- (trimethoxysilyl) propyl methacrylate (Tokyo Kasei Co., Ltd.) 49.67 g, isopropyl alcohol, 355.28 g, water, 39.10 g, acetic acid, 0.10 g was collected.

After the bottom of the flask is immersed in an oil bath, the temperature of the oil bath is raised while rotating the stirring blade at 200 rpm while stirring the contents, and the stirring is continued for 6 hours while maintaining the contents at 90 ° C. went. After 6 hours, the flask was removed from the oil bath and cooled to room temperature. The contents were transferred to a separatory funnel, 400 ml of isopropyl ether and 400 ml of water were added to separate the two layers, and the organic layer was separated. Magnesium sulfate was added to the organic layer for dehydration, and the organic layer was transferred to an eggplant flask and the organic solvent was distilled off with an evaporator to obtain 118.33 g of a colorless and transparent solid. In this way, an alkoxysilane hydrolyzed condensate having a photopolymerizable group was prepared.
<Preparation of adhesive composition>
To 10.00 g of the hydrolyzed condensate of alkoxysilane having a photopolymerizable group thus prepared, 1.40 g of azodicarbonamide as a foaming agent (trade name Celmic CE, manufactured by Sankyo Kasei Co., Ltd.), as a photo radical polymerization initiator 2-hydroxy-2-methyl-1-phenylpropan-1-one (Ciba Specialty Chemicals Co., Ltd., trade name, Darocur 1173), 0.32 g was added to prepare an adhesive composition 1, and 11.72 g Obtained.
<Adhesion and peeling of glass substrate G and silicon plate W>
A glass substrate G having a surface roughness Ra of 0.029 having a thickness of 1.1 mm and a size of 10 cm square, and a silicon disk having a thickness of 525 μm and a diameter of 100 mm as a semiconductor wafer W (hereinafter referred to as a silicon plate W). Prepared).

  As shown in FIG. 1A, 1.3 g of the adhesive composition 1 was applied to the silicon plate W with a spin coater to form the adhesive composition layer 1. Next, as shown in FIG. 1B, the glass substrate G and the silicon plate W stage were overlapped so that the adhesive composition 1 was sandwiched between the glass substrate G and the silicon plate W. The adhesive composition layer 1 was irradiated with ultraviolet rays from the glass substrate G side through the glass substrate G for 30 seconds using an ultraviolet irradiator (HOYA-SCHOTTT, model UV LIGHT SOURCE EX250). Then, the silicon plate W was bonded and fixed to the glass substrate G.

  Next, in a state where the silicon plate W is bonded and fixed to the glass substrate G, heating is performed using a hot plate and the temperature is raised from room temperature (about 20 ° C.) to 200 ° C. After reaching 200 ° C., the adhesive composition layer 1 The foaming agent azodicarbonamide therein decomposed and foamed, and the glass substrate G and the silicon plate W were peeled off after 30 seconds.

  When the peeled surface was visually observed, peeling of the adhesive composition layer 1 occurred between the silicon plate W and the adhesive composition layer 1, and the adhesive composition layer 1 was adhered to the glass substrate G, No residue due to the adhesive composition 1 remaining on the silicon plate W was observed.

Example 2
<Preparation of adhesive composition>
Using 10.00 g of the alkoxysilane hydrolysis condensate prepared by synthesizing the alkoxysilane hydrolysis condensate having the photopolymerizable group of Example 1, the foaming agent was converted from azodicarbonamide to 4,4′-oxybis (benzene). Adhesive composition 1 was prepared in the same procedure as in Example 1, except that the sulfonyl hydrazide was changed.

Specifically, 1.51 g of 4,4′-oxybis (benzenesulfonylhydrazide) (manufactured by Eiwa Kasei Kogyo Co., Ltd., trade name Neo Cerbon) as a foaming agent was added to 10.00 g of the hydrolyzed condensate in the previous period, photo radical polymerization. 10. Add 0.33 g of 2-hydroxy-2-methyl-1-phenylpropan-1-one (Ciba Specialty Chemicals, trade name, Darocur 1173) as an initiator to prepare an adhesive composition 1; 84 g was obtained.
<Adhesion and peeling of glass substrate G and silicon plate W>
Similarly to Example 1, a silicon substrate W having a thickness of 525 μm and a diameter of 100 mm was prepared with a glass substrate G having a thickness of 1.1 mm and a surface roughness Ra of 0.029 mm.

  As shown in FIG. 1A, 1.3 g of the adhesive composition 1 was applied to the silicon plate W with a spin coater to form the adhesive composition layer 1. Next, as shown in FIG. 1B, the adhesive composition 1 was sandwiched between the glass substrate G and the silicon plate W so as to be sandwiched between the glass substrate G and the silicon plate W. Using an ultraviolet irradiator (HOYA-SCHOTTT, model UV LIGHT SOURCE EX250), the adhesive composition layer 1 is irradiated from the glass substrate G side to the adhesive composition layer 1 through the glass substrate G for 30 seconds. After curing, the silicon plate W was bonded and fixed to the glass substrate G.

  Next, in a state where the silicon plate W is bonded and fixed to the glass substrate G, heating is performed using a hot plate to raise the temperature from room temperature (about 20 ° C.) to 160 ° C. After reaching 160 ° C., the adhesive composition layer 1 The foaming agent 4,4′-oxybis (benzenesulfonylhydrazide) contained therein decomposed and foamed, and the glass substrate G and the silicon plate W were separated after 30 seconds.

  When the peeled surface was visually observed, peeling of the adhesive composition layer 1 occurred between the silicon plate W and the adhesive composition layer 1, and the adhesive composition layer 1 was adhered to the glass substrate G, Residue due to the adhesive composition 1 remaining on the silicon plate W was not observed.

Example 3
Instead of the glass substrate G having a surface roughness Ra of 0.029 used in Example 1, a glass substrate G having a thickness of 1.1 mm and a surface roughness Ra of 0.468 having a size of 10 cm square was prepared.

Except that the glass substrate G has a surface roughness Ra of 0.029 to 0.468, a silicon plate W having a thickness of 525 μm and a diameter of 100 mm is used as the semiconductor wafer W in the same manner as in the first embodiment. The adhesive composition 1 containing azodicarbonamide (manufactured by Sankyo Kasei Co., Ltd., trade name Celmic CE) as a foaming agent is used in the same procedure as in Example 1 to form the glass substrate G and the silicon plate W. Adhesion and peeling were performed.
<Adhesion and peeling of glass substrate G and silicon plate W>
When the peeled surface was visually observed, peeling of the adhesive composition layer 1 occurred between the silicon plate W and the adhesive composition layer 1, and the adhesive composition layer 1 was adhered to the glass substrate G, Residue due to the adhesive composition 1 remaining on the silicon plate W was not observed.

Example 4
Unlike Example 2, instead of the glass substrate G having a surface roughness Ra of 0.029, a glass substrate G having a thickness of 1.1 mm and a 10 cm square surface roughness Ra of 0.468 was prepared. As in Example 1, a silicon plate W having a thickness of 525 μm and a diameter of 100 mm was prepared.

Except that the surface roughness Ra was changed from 0.029 to 0.468 to the glass substrate G, 4,4′-oxybis (benzenesulfonylhydrazide) (manufactured by Eiwa Kasei Kogyo Co., Ltd., trade name Neoselbon) was used as a foaming agent. The adhesive composition 1 having the same composition as in Example 2 was used, and the silicon plate W and the glass substrate G were bonded and peeled in the same procedure as in Example 2.
<Adhesion and peeling of glass substrate G and silicon plate W>
When the peeled surface was visually observed, peeling of the adhesive composition layer 1 occurred between the silicon plate W and the adhesive composition layer 1, and the adhesive composition layer 1 was adhered to the glass substrate G, Residue due to the adhesive composition 1 remaining on the silicon plate W was not observed.

Comparative Example 1
The glass substrate G and the silicon plate W were bonded and peeled in the same procedure as in Example 1 except that no foaming agent was added to the adhesive composition 1.

  Specifically, the same adhesive composition 1 was used as in Example 1 except that no foaming agent was added to the same glass substrate G, silicon plate W, and adhesive composition 1 as used in Example 1. In the same procedure as above, the adhesive surface of the silicon plate W is applied by a spin coater to provide the adhesive composition layer 1, and the glass substrate G and the silicon plate W are overlapped so as to sandwich the adhesive composition layer 1. It was.

  In the same procedure as in Example 1, ultraviolet rays were irradiated for 30 seconds to adhere the silicon plate W and the glass substrate G, and then the temperature was raised from room temperature to 200 ° C. with a hot plate. However, since the foaming agent was not added, the adhesive composition layer 1 did not foam and did not peel even at the silicon plate W and the glass substrate G200 ° C. When the temperature of the hot plate was further increased, it did not peel even at 250 ° C.

Comparative Example 2
Unlike Example 1, instead of the glass substrate G having a surface roughness Ra of 0.029, a glass substrate G having a surface roughness Ra of 0.007 having a thickness of 1.1 mm and a size of 10 cm square was used. Using the same silicon plate W and adhesive composition 1 as in Example 1, the adhesive surface of the silicon plate W was applied by a spin coater in the same procedure as in Example 1, and the adhesive composition layer 1 was provided. The glass substrate G and the silicon plate W were overlapped so as to sandwich the adhesive composition layer 1.

In the same procedure as in Example 1, ultraviolet rays were irradiated for 30 seconds to adhere the glass substrate G and the silicon plate W, and then the temperature was raised from room temperature to 200 ° C. using a hot plate. About 30 seconds after reaching 200 ° C., the silicon plate W and the glass substrate G were peeled off. The residue of the adhesive composition 1 adhered to both the silicon plate W and the glass substrate G.
[Evaluation results]
Table 1 shows the results of Examples 1 to 4.

表１に示すように、実施例１〜４においては、何れにおいても、発泡剤を含む接着性組成物１が所望の温度で発泡することでシリコン板Ｗは接着性組成物層１より剥離した。目視観察したところ、シリコン板Ｗに接着性組成物１の残渣（接着残渣）は認められず、良好な結果であった。このことは、表面粗さ０．０２９または０．４６８のガラス基板Ｇを用いたことで、ガラス基板Ｇと接着性組成物層１が強固に接着し、剥離は接着性組成物層１とシリコン板Ｗの間で選択的に生じたことによる。
表２に比較例１〜２の結果を示す。

As shown in Table 1, in each of Examples 1 to 4, the silicon plate W was peeled from the adhesive composition layer 1 because the adhesive composition 1 containing a foaming agent foamed at a desired temperature. . As a result of visual observation, no residue (adhesion residue) of the adhesive composition 1 was observed on the silicon plate W, which was a favorable result. This is because the glass substrate G having a surface roughness of 0.029 or 0.468 is used, whereby the glass substrate G and the adhesive composition layer 1 are firmly bonded, and peeling is performed with the adhesive composition layer 1 and silicon. This is because it occurs selectively between the plates W.
Table 2 shows the results of Comparative Examples 1 and 2.

表２の比較例１に示すように、接着性組成物１が発泡剤を含まない場合、シリコン板Ｗとガラス基板Ｇは加熱しても剥離しなかった。このことは、剥離の駆動力に発泡を用いることができないため、シリコン板Ｗとガラス基板Ｇを自発的に剥離させることはできなかったことによる。

As shown in Comparative Example 1 of Table 2, when the adhesive composition 1 did not contain a foaming agent, the silicon plate W and the glass substrate G were not peeled even when heated. This is because the silicon plate W and the glass substrate G could not be peeled spontaneously because foaming cannot be used as the driving force for peeling.

  As shown in Comparative Example 2, when a glass substrate G having an Ra of 0.007 was used for the glass substrate G, a residue (adhesive residue) of the adhesive composition layer 1 was observed on the silicon plate W. This is because the adhesive force between the glass substrate G and the adhesive composition layer 1 is low, and peeling did not occur selectively between the silicon plate W and the adhesive composition layer 1.

G Glass substrate W Semiconductor wafer, silicon substrate 1 Adhesive composition, Adhesive composition layer 2 Back side of semiconductor wafer

Claims (4)

An adhesive composition containing at least a siloxane compound having a photopolymerizable group, a photopolymerization initiator, and a foaming agent is applied to a glass substrate having a surface roughness of Ra 0.010 or more and 1.000 or less on the formed adhesive surface. Adhering the semiconductor wafer, and then curing the adhesive composition by irradiating the adhesive composition with high energy light, and fixing the semiconductor wafer to the glass substrate;
A processing step of processing the fixed semiconductor wafer;
Heating the cured adhesive composition, foaming the foaming agent in the adhesive composition, and having a peeling step of peeling the semiconductor wafer from the glass substrate,
Semiconductor wafer processing method. The semiconductor wafer processing method according to claim 1, wherein the processing performed in the processing step is backside polishing or cutting of the semiconductor wafer. The photopolymerizable group of the siloxane compound is a photopolymerizable group containing at least one group selected from the group consisting of acryloyl group, methacryloyl group, vinyl group, epoxy group, oxetane group and vinyl ether group. A method for processing a semiconductor wafer according to claim 2. The method for processing a semiconductor wafer according to any one of claims 1 to 3, wherein the siloxane compound is a hydrolysis-condensation product of alkoxysilane.

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