JP2017107993A - Flattening processing device of hard-brittle substrate, and method for polishing hard-brittle substrate using the same - Google Patents
Flattening processing device of hard-brittle substrate, and method for polishing hard-brittle substrate using the same Download PDFInfo
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- JP2017107993A JP2017107993A JP2015240761A JP2015240761A JP2017107993A JP 2017107993 A JP2017107993 A JP 2017107993A JP 2015240761 A JP2015240761 A JP 2015240761A JP 2015240761 A JP2015240761 A JP 2015240761A JP 2017107993 A JP2017107993 A JP 2017107993A
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- 238000005498 polishing Methods 0.000 title claims abstract description 88
- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000010432 diamond Substances 0.000 claims abstract description 37
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 37
- 239000002002 slurry Substances 0.000 claims abstract description 25
- 239000000853 adhesive Substances 0.000 claims abstract description 10
- 230000001070 adhesive effect Effects 0.000 claims abstract description 10
- 238000007517 polishing process Methods 0.000 claims description 4
- 239000006061 abrasive grain Substances 0.000 abstract description 23
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 239000000835 fiber Substances 0.000 description 5
- 229920000058 polyacrylate Polymers 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000002759 woven fabric Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229920000305 Nylon 6,10 Polymers 0.000 description 1
- 229920002302 Nylon 6,6 Polymers 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- -1 polybutylene phthalate Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本発明は、サファイア基板、窒化ガリウム（ＧａＮ）基板、ＳｉＣ基板、窒化珪素（Ｓｉ3Ｎ4）基板等の硬脆性基板の表面を磁気ダイアモンド砥粒含有研磨剤スラリー溶液により平坦化研磨加工する方法およびそれに用いるＣＭＰ研磨装置に関わる。本発明の磁力フィールドアシストＣＭＰ研磨加工方法によれば、高価なダイアモンド砥粒含有研磨剤スラリー溶液の消費量が少なく、かつ、高能率にラッピング加工できる利点がある。
The present invention is a method for planarizing and polishing a surface of a hard and brittle substrate such as a sapphire substrate, a gallium nitride (GaN) substrate, a SiC substrate, or a silicon nitride (Si 3 N 4 ) substrate with a slurry slurry containing magnetic diamond abrasive grains. And a CMP polishing apparatus used therefor. According to the magnetic field assisted CMP polishing method of the present invention, there is an advantage that the consumption of expensive diamond abrasive-containing abrasive slurry solution is small and lapping can be performed with high efficiency.
結晶配向を有する硬脆性基板（サファイア基板、ＧａＮ基板、ＳｉＣ基板など）は、ＬＥＤ、パワー半導体装置、抵抗器センサー等の基板として利用されている。この硬脆性基板は、オリフラが研削加工されたインゴットブロックを切断加工して得られた円盤状基板の反りが６インチ径基板でウェーハ反り高さ５〜６ｍｍと大きいので、この硬脆性基板の表裏両面を研削加工して平坦化加工基板とする沢山の加工方法、例えば、基板両面を同時に研磨加工する両面同時研磨方法、または、基板の表面を研削加工した後、基板裏面を研削加工する単葉研削加工方法が提案されている。
A hard and brittle substrate (sapphire substrate, GaN substrate, SiC substrate, etc.) having a crystal orientation is used as a substrate for LEDs, power semiconductor devices, resistor sensors, and the like. In this hard and brittle substrate, the warpage of the disk-shaped substrate obtained by cutting the ingot block in which the orientation flat has been ground is 6 inches and the wafer warp height is as large as 5 to 6 mm. There are many processing methods to grind both sides to make a flattened substrate, for example, double-sided simultaneous polishing method that simultaneously polishes both sides of the substrate, or single-wafer grinding that grinds the back surface of the substrate after grinding the surface of the substrate Processing methods have been proposed.
また、特表２００４−５３０３０６号公報（特許文献１）は、ＡｌｘＧａｙＩｎｚＮウェーハ（式中、０＜ｙ≦１およびｘ＋ｙ＋ｚ＝１）をそのＧａ側にて化学的機械研磨（ＣＭＰ）する方法であって、２００ｎｍ未満の粒子寸法を有する研磨コロイダルアルミナ粒子と、少なくとも１種の酸と、場合により、少なくとも１種の酸化剤とを含むｐＨ値は約３〜約５の範囲のＣＭＰスラリーを用いるＣＭＰ研磨加工方法を提案する。
JP-T-2004-530306 (Patent Document 1) discloses that an Al x Ga y In z N wafer (where 0 <y ≦ 1 and x + y + z = 1) is subjected to chemical mechanical polishing (CMP) on its Ga side. The pH value comprising abrasive colloidal alumina particles having a particle size of less than 200 nm, at least one acid, and optionally at least one oxidizing agent, in the range of about 3 to about 5. A CMP polishing method using a CMP slurry is proposed.
また、本願発明者らによる特開２０１３−１９７４２５号公報（特許文献２）は、 無機材料（石英ガラス板、無機アルカリガラス板、および、合成サファイア板）製基板支持プレートの表面に軟化温度が２８０℃以上の溶剤型ポリイミド樹脂接着剤を用いてＳｉＣ基板を貼付した積層体を形成し、この積層体を基板用チャック上にＳｉＣ基板面を上方に向けて載置し、 ついで、回転しているカップホイール型ダイアモンド砥石を前記積層体のＳｉＣ基板面に当接、摺擦させてＳｉＣ基板面を研削加工することを特徴とする、炭化珪素基板の平坦化研削加工方法を提案する。
Japanese Patent Application Laid-Open No. 2013-197425 (Patent Document 2) by the inventors of the present application discloses that the softening temperature is 280 on the surface of a substrate support plate made of an inorganic material (quartz glass plate, inorganic alkali glass plate, and synthetic sapphire plate). A layered product with a SiC substrate attached is formed using a solvent-type polyimide resin adhesive at a temperature of ℃ or higher, and this layered product is placed on the substrate chuck with the SiC substrate surface facing upward, and then rotating. A flattening grinding method for a silicon carbide substrate is proposed, characterized in that a SiC wheel surface is ground by abutting and rubbing a cup wheel type diamond grindstone against the SiC substrate surface of the laminate.
前記特許文献１のコロイダルアルミナ粒子含有研磨剤スラリー溶液を用いるＣＭＰ研磨加工方法では、特許文献２記載のダイアモンド固定砥粒を用いるＣＭＰ研磨加工方法と比較して研磨速度が低く、生産性が低い。
The CMP polishing method using the colloidal alumina particle-containing abrasive slurry solution of Patent Document 1 has a lower polishing speed and lower productivity than the CMP polishing method using diamond fixed abrasive particles described in Patent Document 2.
前記特許文献２のダイアモンド固定砥粒を用いる硬脆性基板の研削加工方法は、ダイアモンド砥粒がカップホイール型研削砥石に固定されているので、平坦化加工中の研削砥石の刃先が硬脆性基板と接する領域面積が狭く、ダイアモンド砥粒の切削機能が最大限利用されていないこととなる。
In the grinding method of a hard and brittle substrate using diamond fixed abrasive grains in Patent Document 2, since the diamond abrasive grains are fixed to a cup wheel type grinding wheel, the cutting edge of the grinding wheel during flattening processing is the same as the hard brittle substrate. The area of the contact area is narrow, and the cutting function of the diamond abrasive grains is not utilized to the maximum extent.
本願発明者らは、磁気ダイアモンド砥粒を遊離砥粒として磁化研磨定盤（磁性シートを用いる場合も含む）と共に用いれば、研磨定盤上に効率的に広く分散そして見かけ上磁気ダイアモンド砥粒が半固定化されることでラッピング加工時のダイアモンド砥粒機能が有する切刃の切削機能が最大限利用されると着想し、磁気ダイアモンド砥粒含有研磨剤スラリー溶液を利用するに適したＣＭＰ研磨加工装置を開発し、本願発明に到った。
When the present inventors use magnetic diamond abrasive grains as free abrasive grains together with a magnetic polishing surface plate (including a case where a magnetic sheet is used), the magnetic diamond abrasive particles are efficiently dispersed widely on the polishing surface plate and apparently It is thought that the cutting function of the cutting edge of the diamond abrasive function at the time of lapping will be maximized by being semi-fixed, and CMP polishing process suitable for using abrasive slurry solution containing magnetic diamond abrasive grains An apparatus was developed and the present invention was reached.
請求項１の発明は、剛性固定定盤（２ｄ）上に磁性シートまたは磁化チャック（２ｂ）を接着剤（２ｃ）で接着し、更にこの磁性シートまたは磁化チャック（２ｂ）上に研磨パッド（２ａ）を接着剤（２ｅ）で接着した構造の研磨定盤（２）、前記研磨定盤（２）上方に設けた基板ホルダー（３）、および、磁気ダイアモンド砥粒含有研磨剤スラリー溶液供給ノズル（４）を設けた研磨装置（１）を提供するものである。
According to the first aspect of the present invention, a magnetic sheet or a magnetic chuck (2b) is bonded to the rigid fixed surface plate (2d) with an adhesive (2c), and a polishing pad (2a) is further mounted on the magnetic sheet or the magnetic chuck (2b). ) With an adhesive (2e), a substrate holder (3) provided above the polishing platen (2), and a magnetic diamond abrasive-containing abrasive slurry solution supply nozzle ( A polishing apparatus (1) provided with 4) is provided.
請求項２の発明は、上記研磨装置（１）を用い、下面に硬脆性基板（５）を保持する基板ホルダー（３）を回転加工させつつ、下方に移動させて回転している研磨定盤（２）の研磨パッド（２ａ）上面に硬脆性基板（５）を接触させて研磨パッド（２ａ）面と硬脆性基板（５）面との摺擦により研磨加工を開始するとともに、この研磨加工中に前記ダイアモンド砥粒含有研磨剤スラリー溶液供給ノズル（４）より磁気ダイアモンド砥粒含有研磨剤スラリー溶液（４ａ）を前記研磨パッド（２ａ）上に供給することにより前記研磨パッド（２ａ）面と硬脆性基板（５）面間に前記磁気ダイアモンド砥粒含有研磨剤スラリー溶液を流布させることを特徴とする、硬脆性基板の研磨加工方法を提供するものである。
The invention of claim 2 is a polishing platen using the polishing apparatus (1) and rotating the substrate holder (3) holding the hard and brittle substrate (5) on the lower surface while rotating the substrate holder (3). The top surface of the polishing pad (2a) in (2) is brought into contact with the hard and brittle substrate (5), and the polishing process is started by sliding between the surface of the polishing pad (2a) and the surface of the hard and brittle substrate (5). By supplying magnetic diamond abrasive-containing abrasive slurry solution (4a) onto the polishing pad (2a) from the diamond abrasive-containing abrasive slurry solution supply nozzle (4), the polishing pad (2a) surface and The present invention provides a method for polishing a hard and brittle substrate, characterized in that the magnetic diamond abrasive-containing abrasive slurry solution is distributed between the hard and brittle substrates (5).
磁性シートまたは磁化チャック（２ｂ）の磁力が遊離磁気ダイアモンド砥粒に作用し、遊離磁気ダイアモンド砥粒を磁化させるので、磁化された遊離ダイアモンド砥粒は研磨パッド（２ａ）上に均一に分散固定される。この状態はあたかも遊離砥粒でありながら磁化研磨定盤上に磁化固定されることであたかも半固定研磨砥粒の状態を形成するものである。よって、ＣＭＰ研磨加工中、磁気遊離ダイアモンド砥粒が基板と接する際に基板の回転運動に連れ回されずに半固定化したダイアモンド砥粒によって引っ掻きによる切削力が高くなるので、結果的に基板へ作用するダイアモンド砥粒の切削作用の頻度と量が大きくなり、従来の遊離砥粒研磨加工方法と比較して基板の研磨速度を向上させることができる。
The magnetic force of the magnetic sheet or the magnetic chuck (2b) acts on the free magnetic diamond abrasive grains to magnetize the free magnetic diamond abrasive grains, so that the magnetized free diamond abrasive grains are uniformly dispersed and fixed on the polishing pad (2a). The This state forms a state of semi-fixed abrasive grains as if they were free abrasive grains and fixed on the magnetized polishing surface plate. Therefore, during the CMP polishing process, when the magnetic free diamond abrasive grains come into contact with the substrate, the cutting force due to scratching is increased by the diamond abrasive grains semi-fixed without being accompanied by the rotational movement of the substrate. The frequency and amount of the cutting action of the acting diamond abrasive grains are increased, and the polishing rate of the substrate can be improved as compared with the conventional free abrasive polishing method.
図１に示す本発明の研削装置（１）は、剛性固定定盤（２ｄ）上に磁性シートまたは磁化チャック（２ｂ）を接着剤（２ｃ）で接着し、更にこの磁性シートまたは磁化チャック（２ｂ）上に研磨パッド（２ａ）を接着剤（２ｅ）で接着した構造の研磨定盤（２）、この研磨定盤（２）、前記研磨定盤（２）上方に設けた基板ホルダー（３）、および、磁気ダイアモンド砥粒含有研磨剤スラリー溶液供給ノズル（４）を設けた研磨装置（１）である。
In the grinding apparatus (1) of the present invention shown in FIG. 1, a magnetic sheet or a magnetic chuck (2b) is adhered to a rigid fixed surface plate (2d) with an adhesive (2c), and this magnetic sheet or magnetic chuck (2b) is further bonded. ) A polishing surface plate (2) having a structure in which a polishing pad (2a) is bonded with an adhesive (2e), a polishing platen (2), and a substrate holder (3) provided above the polishing surface plate (2) And a polishing apparatus (1) provided with a magnetic diamond abrasive-containing abrasive slurry solution supply nozzle (4).
図１において、研磨定盤の回転軸（２ｆ）は、サーボモーター(図示されていない)により５０〜２００ｒｐｍの回転速度で回転される。同様に、基板ホルダー（３）の回転軸（３ｃ）もサーボモーター(図示されていない)により８０〜２００ｒｐｍの回転速度で回転される。
In FIG. 1, the rotating shaft (2f) of the polishing surface plate is rotated at a rotation speed of 50 to 200 rpm by a servo motor (not shown). Similarly, the rotation shaft (3c) of the substrate holder (3) is also rotated at a rotation speed of 80 to 200 rpm by a servo motor (not shown).
剛性固定定盤（２ｄ）素材としては、真鍮板、アルミニウム板、強化ガラス板、ＰＥＥＫ、ポリアセタール、ナイロン６，６、ナイロン６，１０、ポリブチレンフタレート、ポリアラミド、ポリイミド等のエンジニアリングプラスチック製板を用いることができる。
As the rigid fixed surface plate (2d) material, engineering plastic plates such as brass plate, aluminum plate, tempered glass plate, PEEK, polyacetal, nylon 6,6, nylon 6,10, polybutylene phthalate, polyaramid, polyimide, etc. are used. be able to.
磁性シートまたは磁化チャック（２ｂ）としては、丸石産業株式会社製ネオジウム磁石シート“ディラッパー２”（商品名）を用いた。また、研磨パッド（２ａ）として、丸石産業株式会社製アラミド繊維製織布パッド“Ｄ−Ｌａｐｐｅｒ”（商品名）、特許第５２９１６４７号明細書に記載される丸石産業株式会社製“Ｑチャック”(商品名)を用いることができる。前者の方が後者に比較して研磨速度１０倍である。接着剤（２ｃ,2e）として丸石産業株式会社製両面型固定粘着フィルム“Ｑチャック”(商品名)を用いた。
As the magnetic sheet or the magnetic chuck (2b), a neodymium magnet sheet “Dlapper 2” (trade name) manufactured by Maruishi Sangyo Co., Ltd. was used. Further, as a polishing pad (2a), an aramid fiber woven pad “D-Lapper” (trade name) manufactured by Cobblestone Sangyo Co., Ltd., “Q chuck” manufactured by Cobblestone Sangyo Co., Ltd. described in Japanese Patent No. 5291647 ( Product name) can be used. The former is 10 times faster than the latter. As the adhesive (2c, 2e), a double-sided fixed adhesive film “Q chuck” (trade name) manufactured by Maruishi Sangyo Co., Ltd. was used.
ダイアモンド砥粒含有研磨剤スラリー溶液研磨砥粒としては、粒径が２０〜３０μｍのダイアモンド砥粒を１０〜３０重量％含有する東京ダイヤモンド工具製作所製スラリー溶液“j-Diamond Slurry”（商品名）“を用いた。
As the abrasive slurry containing diamond abrasive grains, the slurry solution “j-Diamond Slurry” (trade name) “manufactured by Tokyo Diamond Tool Co., Ltd. containing 10 to 30% by weight of diamond abrasive grains having a particle size of 20 to 30 μm. Was used.
実施例１
図１に示す高強力ポリアクリレート系繊維製織布パッド“Ｄ−Ｌａｐｐｅｒ”（２ａ）を備える研磨装置（１）、粒径が２０〜３０μｍの磁気ダイアモンド砥粒を１０〜３０重量％含有する研磨スラリー溶液（４ａ）を用い、基板ホルダー（３）の回転数４８ｍｉｎ−１、研磨定盤の回転数５０ｍｉｎ−１、基板への圧力１，２５０ｇ／ｃｍ２でＣＭＰ研磨加工を行い、基板の厚み０．９２μｍを削減させた。得た加工基板の表面粗さは１１．２ｎｍであった。研磨中の研磨パッド磁気力は、１００〜５，０００ｇ／ｃｍ２と変化した。研磨速度は、３７．３μｍ／１０分であった。
Example 1
Polishing apparatus (1) provided with high-strength polyacrylate fiber woven fabric pad “D-Lapper” (2a) shown in FIG. 1, polishing containing 10 to 30% by weight of magnetic diamond abrasive grains having a particle diameter of 20 to 30 μm using a slurry solution (4a), it performs a CMP polishing at the substrate holder (3) rotation speed 48 min-1, the rotation speed 50 min-1 of the polishing platen, pressure 1,250 g / cm 2 to the substrate, the substrate The thickness of 0.92 μm was reduced. The surface roughness of the processed substrate obtained was 11.2 nm. The polishing pad magnetic force during polishing varied from 100 to 5,000 g / cm 2 . The polishing rate was 37.3 μm / 10 minutes.
比較例１
岡本工作機械製作所製サファイア研磨装置“ＳＧＬ６”（商品名）の研磨パッドを実施例１で用いた高強力ポリアクリレート系繊維製織布パッド“Ｄ−Ｌａｐｐｅｒ”に変えた研磨装置（１）を用いる外は、実施例１と同様にしてサファイア基板のＣＭＰ研磨加工を行い、２．４８ｎｍの加工基板を得た。研磨速度は、２３．７μｍ／１０分であった。
Comparative Example 1
A polishing apparatus (1) in which the polishing pad of the sapphire polishing apparatus “SGL6” (trade name) manufactured by Okamoto Machine Tool Co., Ltd. is replaced with the high-strength polyacrylate fiber woven fabric pad “D-Lapper” used in Example 1 is used. Outside, CMP polishing of the sapphire substrate was performed in the same manner as in Example 1 to obtain a processed substrate of 2.48 nm. The polishing rate was 23.7 μm / 10 minutes.
実施例２
図１に示す高強力ポリアクリレート系繊維製織布パッド“Ｄ−Ｌａｐｐｅｒ”を備える研磨装置（１）、平均粒径が１４０μｍの磁気ダイアモンド砥粒を１０〜３０重量％含有する研磨スラリー溶液を用い、基板ホルダー（３）の回転数４８ｍｉｎ−１、研磨定盤の回転数５０ｍｉｎ−１、基板への圧力１，２５０ｇ／ｃｍ２でＣＭＰ研磨加工を行い、基板の厚み１．８３μｍを削減させた。得た加工基板の表面粗さは２０２ｎｍであった。
Example 2
A polishing apparatus (1) provided with a high-strength polyacrylate fiber woven fabric pad “D-Lapper” shown in FIG. 1 and a polishing slurry solution containing 10 to 30% by weight of magnetic diamond abrasive grains having an average particle diameter of 140 μm are used. , CMP polishing is performed at a substrate holder (3) rotation speed of 48 min-1 , a polishing plate rotation speed of 50 min-1 , and a substrate pressure of 1,250 g / cm 2 to reduce the substrate thickness of 1.83 μm. I let you. The surface roughness of the processed substrate obtained was 202 nm.
実施例３
図１に示す高強力ポリアクリレート系繊維製織布パッド“Ｄ−Ｌａｐｐｅｒ”を備える研磨装置（１）、粒径が２０〜３０μｍのダイアモンド砥粒を１０〜３０重量％含有する研磨スラリー溶液を用い、基板ホルダー（３）の回転数１２０ｍｉｎ−１、研磨定盤の回転数8０ｍｉｎ−１、基板への圧力１，２５０ｇ／ｃｍ２でＣＭＰ研磨加工を行い、基板の厚み０．４８μｍを削減させた。得た加工基板の表面粗さは１８．２ｎｍであった。研磨中の研磨パッド磁気力は、１００〜５，０００ｇ／ｃｍ２と変化した。
Example 3
A polishing apparatus (1) having a high-strength polyacrylate fiber woven fabric pad “D-Lapper” shown in FIG. 1 and a polishing slurry solution containing 10 to 30% by weight of diamond abrasive grains having a particle diameter of 20 to 30 μm are used. , CMP polishing is performed at a substrate holder (3) rotation speed of 120 min-1 , a polishing plate rotation speed of 80 min-1 , and a substrate pressure of 1,250 g / cm 2 to reduce the substrate thickness of 0.48 μm. I let you. The surface roughness of the processed substrate obtained was 18.2 nm. The polishing pad magnetic force during polishing varied from 100 to 5,000 g / cm 2 .
実施例４
図１に示す高強力ポリアクリレート系繊維製織布パッド“Ｄ−Ｌａｐｐｅｒ”を備える研磨装置（１）、粒径が２０〜３０μｍの磁気ダイアモンド砥粒を１０〜３０重量％含有する研磨スラリー溶液（４ａ）を用い、基板ホルダー（３）の回転数４８ｍｉｎ−１、研磨定盤の回転数５０ｍｉｎ−１、基板への圧力３７５ｇ／ｃｍ２でＣＭＰ研磨加工を行い、基板の厚み１．１０μｍを削減させた。得た加工基板の表面粗さは１３．４ｎｍであった。研磨中の研磨パッド磁気力は、１００〜５，０００ｇ／ｃｍ２と変化した。
Example 4
Polishing apparatus (1) provided with a high-strength polyacrylate fiber woven fabric pad “D-Lapper” shown in FIG. 1, a polishing slurry solution containing 10 to 30% by weight of magnetic diamond abrasive grains having a particle diameter of 20 to 30 μm ( 4a), CMP polishing is performed at a rotation speed of the substrate holder (3) of 48 min−1 , a rotation speed of the polishing platen of 50 min−1 , and a pressure on the substrate of 375 g / cm 2 to obtain a substrate thickness of 1.10 μm. Reduced. The surface roughness of the processed substrate obtained was 13.4 nm. The polishing pad magnetic force during polishing varied from 100 to 5,000 g / cm 2 .
本発明の磁気ダイアモンド遊離砥粒を用いるＣＭＰ研磨加工方法は、従来技術（磁力を用いない）ＣＭＰ研磨加工方法と比較して約１０倍の高速度で基板を研磨加工可能である。
The CMP polishing method using magnetic diamond free abrasive grains according to the present invention can polish a substrate at a speed about 10 times higher than that of a conventional CMP polishing method that does not use magnetic force.
１ ＣＭＰ研磨装置
２ 研磨定盤
２ａ 研磨パッド
２ｂ 磁化チャック
３ 基板ホルダー
４ 研磨剤スラリー溶液供給ノズル
４ａ 磁気ダイアモンドスラリー溶液
５ 硬脆性基板
1 CMP polishing equipment
2 Polishing surface plate
2a Polishing pad
2b Magnetized chuck
3 Substrate holder
4 Abrasive slurry solution supply nozzle
4a Magnetic diamond slurry solution
5 Hard brittle substrate
Claims (2)
剛性固定定盤（２ｄ）上に磁性シートまたは磁化チャック（２ｂ）を接着剤（２ｃ）で接着し、更にこの磁性シートまたは磁化チャック（２ｂ）上に研磨パッド（２ａ）を接着剤（２ｅ）で接着した構造の研磨定盤（２）、前記研磨定盤（２）上方に設けた基板ホルダー（３）、および、磁気ダイアモンド砥粒含有研磨剤スラリー溶液供給ノズル（４）を設けたことを特徴とする研磨装置（１）。
A magnetic sheet or a magnetic chuck (2b) is bonded to the rigid fixed surface plate (2d) with an adhesive (2c), and a polishing pad (2a) is further bonded to the magnetic sheet or the magnetic chuck (2b) with an adhesive (2e). A polishing platen (2) having a structure bonded to the substrate, a substrate holder (3) provided above the polishing platen (2), and a magnetic diamond abrasive-containing abrasive slurry solution supply nozzle (4). A characteristic polishing apparatus (1).
上記請求項１記載の研磨装置（１）を用い、下面に硬脆性基板（５）を保持する基板ホルダー（３）を回転加工させつつ、下方に移動させて回転している研磨定盤（２）の研磨パッド（２ａ）上面に硬脆性基板（５）を接触させて研磨パッド（２ａ）面と硬脆性基板（５）面との摺擦により研磨加工を開始するとともに、この研磨加工中に前記ダイアモンド砥粒含有研磨剤スラリー溶液供給ノズル（４）より磁気ダイアモンド砥粒含有研磨剤スラリー溶液（４ａ）を前記研磨パッド（２ａ）上に供給することにより前記研磨パッド（２ａ）面と硬脆性基板（５）面間に前記ダイアモンド砥粒含有研磨剤スラリー溶液を流布させることを特徴とする、硬脆性基板の研磨加工方法。
Using the polishing apparatus (1) according to claim 1, the polishing platen (2) rotating and rotating downward while rotating the substrate holder (3) holding the hard and brittle substrate (5) on the lower surface. ) Is brought into contact with the upper surface of the polishing pad (2a), and the polishing process is started by rubbing the polishing pad (2a) surface with the hard brittle substrate (5) surface. By supplying magnetic diamond abrasive-containing abrasive slurry solution (4a) from the diamond abrasive-containing abrasive slurry solution nozzle (4) onto the polishing pad (2a), the surface of the polishing pad (2a) is hard and brittle. A polishing method for a hard and brittle substrate, characterized in that the diamond abrasive-containing abrasive slurry solution is distributed between the surfaces of the substrate (5).
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