JP2017078648A - Radiation detector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a radiation detector that is highly reliable in terms of resolution characteristics.SOLUTION: An embodiment of a radiation detector comprises; an array substrate comprising a substrate and a plurality of photoelectric conversion elements provided on one surface of the substrate; a scintillator layer provided on top of the plurality of photoelectric conversion elements and configured to convert radiation into fluorescence; a base containing a metallic material and comprising a surface portion facing an upper surface of the scintillator layer, a peripheral surface portion provided along a peripheral edge of the surface portion to face a side surface of the scintillator layer, and an annular flange portion provided along an edge of the peripheral surface portion on a side opposite the surface portion side to face the array substrate; and an inner layer containing an inorganic material and covering a surface of the surface portion facing the scintillator layer, a surface of the peripheral surface portion facing the scintillator layer, and a surface of the flange portion facing the array substrate.SELECTED DRAWING: Figure 2

Description

  Embodiments described herein relate generally to a radiation detector.

An example of the radiation detector is an X-ray detector. In an X-ray detector, X-rays are converted into fluorescence, that is, visible light by a scintillator layer, and this fluorescence is signaled using a photoelectric conversion element such as an amorphous silicon (a-Si) photodiode or a CCD (Charge Coupled Device). An X-ray image is acquired by converting the charge.
In some cases, a reflective layer is further provided on the scintillator layer in order to improve the use efficiency of fluorescence and improve sensitivity characteristics.

Here, the scintillator layer and the reflective layer need to be isolated from the external atmosphere in order to suppress degradation of resolution characteristics due to moisture or the like. In particular, when the scintillator layer is made of CsI (cesium iodide): Tl (thallium), CsI: Na (sodium), or the like, there is a possibility that degradation of resolution characteristics due to moisture or the like may increase.
Therefore, as a structure capable of obtaining high moisture-proof performance, a technique for covering the scintillator layer and the reflective layer with a hat-shaped moisture-proof body made of aluminum has been proposed.

However, CsI is highly hygroscopic. For this reason, moisture may be adsorbed to the scintillator layer during the manufacturing process of the X-ray detector. Moreover, the ionization tendency of Cs contained in CsI is higher than the ionization tendency of aluminum. Therefore, corrosion of aluminum and decomposition of CsI may occur through moisture adsorbed on the scintillator layer.
When corrosion of aluminum progresses, pinholes are generated in the moisture-proof body, and the moisture-proof performance may be reduced. When the moisture-proof performance of the moisture-proof body is reduced, the scintillator layer made of CsI: Tl or the like that is highly deteriorated against moisture may be damaged, and the resolution characteristics of the X-ray detector may be significantly reduced.
Further, when the decomposition of CsI proceeds, the scintillator layer may be damaged, and the resolution characteristics of the X-ray detector may be greatly deteriorated.
Therefore, development of a radiation detector having high reliability with respect to resolution characteristics has been desired.

JP 2010-101640 A

  The problem to be solved by the present invention is to provide a radiation detector with high reliability for resolution characteristics.

  A radiation detector according to an embodiment is provided on an array substrate having a substrate and a plurality of photoelectric conversion elements provided on one surface side of the substrate, and provided on the plurality of photoelectric conversion elements. A scintillator layer that converts to fluorescence, a surface portion that faces the top surface of the scintillator layer, a peripheral surface portion that is provided at the periphery of the surface portion and that faces a side surface of the scintillator layer, and the surface portion side of the peripheral surface portion An annular collar portion provided at an opposite end portion and facing the array substrate; a base portion containing a metal material; a surface facing the scintillator layer of the surface portion; and the scintillator layer of the peripheral surface portion And an inner layer including an inorganic material provided on a surface of the collar portion facing the array substrate.

1 is a schematic perspective view for illustrating an X-ray detector 1 according to the present embodiment. 1 is a schematic cross-sectional view of an X-ray detector 1. FIG. (A) is a schematic front view of the base 7a, (b) is a schematic side view of the base 7a.

Hereinafter, embodiments will be illustrated with reference to the drawings. In addition, in each drawing, the same code | symbol is attached | subjected to the same component and detailed description is abbreviate | omitted suitably.
Moreover, the radiation detector according to the embodiment of the present invention can be applied to various types of radiation such as γ rays in addition to X-rays. Here, as an example, a case of X-rays as a representative example of radiation will be described as an example. Therefore, by replacing “X-ray” in the following embodiments with “other radiation”, the present invention can be applied to other radiation.

FIG. 1 is a schematic perspective view for illustrating an X-ray detector 1 according to the present embodiment.
In order to avoid complication, in FIG. 1, the protective layer 2f, the reflective layer 6, the moisture-proof body 7, the bonding layer 8 and the like are omitted.
FIG. 2 is a schematic cross-sectional view of the X-ray detector 1.
In order to avoid complication, the signal processing unit 3 and the image transmission unit 4 are not illustrated in FIG.
The X-ray detector 1 that is a radiation detector is an X-ray flat sensor that detects an X-ray image that is a radiation image. The X-ray detector 1 can be used for general medical purposes, for example. However, the use of the X-ray detector 1 is not limited to general medical use.

As shown in FIGS. 1 and 2, the X-ray detector 1 includes an array substrate 2, a signal processing unit 3, an image transmission unit 4, a scintillator layer 5, a reflective layer 6, a moisture barrier 7, a bonding layer 8, and a support. A plate 9 is provided.
The array substrate 2 includes a substrate 2a, a photoelectric conversion unit 2b, a control line (or gate line) 2c1, a data line (or signal line) 2c2, a wiring pad 2d1, a wiring pad 2d2, and a protective layer 2f.

The substrate 2a has a plate shape and is made of a translucent material such as non-alkali glass.
A plurality of photoelectric conversion units 2b are provided on one surface of the substrate 2a.
The photoelectric conversion unit 2b has a rectangular shape and is provided in a region defined by the control line 2c1 and the data line 2c2. The plurality of photoelectric conversion units 2b are arranged in a matrix.
One photoelectric conversion unit 2b corresponds to one pixel.

The photoelectric conversion unit 2b is provided with a photoelectric conversion element 2b1 and a thin film transistor (TFT) 2b2 which is a switching element.
The photoelectric conversion unit 2b can be provided with a storage capacitor (not shown) that stores the signal charge converted in the photoelectric conversion element 2b1. The storage capacitor (not shown) has, for example, a rectangular flat plate shape and can be provided under the thin film transistor 2b2. However, depending on the capacitance of the photoelectric conversion element 2b1, the photoelectric conversion element 2b1 can also serve as a storage capacitor (not shown).

The photoelectric conversion element 2b1 can be, for example, a photodiode.
The thin film transistor 2b2 performs switching between accumulation and emission of electric charges generated when fluorescence enters the photoelectric conversion element 2b1. The thin film transistor 2b2 can include a semiconductor material such as amorphous silicon (a-Si) or polysilicon (P-Si). The thin film transistor 2b2 includes a gate electrode 2b2a, a source electrode 2b2b, and a drain electrode 2b2c. Gate electrode 2b2a of thin film transistor 2b2 is electrically connected to corresponding control line 2c1. The source electrode 2b2b of the thin film transistor 2b2 is electrically connected to the corresponding data line 2c2. The drain electrode 2b2c of the thin film transistor 2b2 is electrically connected to the corresponding photoelectric conversion element 2b1 and a storage capacitor (not shown).

A plurality of control lines 2c1 are provided in parallel with each other at a predetermined interval. For example, the control line 2c1 extends in the row direction.
One control line 2c1 is electrically connected to one of a plurality of wiring pads 2d1 provided near the periphery of the substrate 2a. One wiring pad 2d1 is electrically connected to one of a plurality of wirings provided on the flexible printed board 2e1. The other ends of the plurality of wirings provided on the flexible printed circuit board 2e1 are electrically connected to a control circuit (not shown) provided on the signal processing unit 3, respectively.

A plurality of data lines 2c2 are provided in parallel with each other at a predetermined interval. The data line 2c2 extends, for example, in the column direction orthogonal to the row direction.
One data line 2c2 is electrically connected to one of a plurality of wiring pads 2d2 provided near the periphery of the substrate 2a. One wiring pad 2d2 is electrically connected to one of a plurality of wirings provided on the flexible printed board 2e2. The other ends of the plurality of wirings provided on the flexible printed board 2e2 are electrically connected to an amplification / conversion circuit (not shown) provided on the signal processing unit 3, respectively.

The protective layer 2f has a first layer 2f1 and a second layer 2f2. The first layer 2f1 is provided so as to cover the photoelectric conversion unit 2b, the control line 2c1, and the data line 2c2. The second layer 2f2 is provided on the first layer 2f1.
The first layer 2f1 and the second layer 2f2 can be formed of an insulating material.
The first layer 2f1 and the second layer 2f2 can be formed of an inorganic material such as silicon nitride (SiN), for example.
The first layer 2f1 and the second layer 2f2 can also be formed of an organic material such as acrylic resin, polyethylene, polypropylene, butyral, for example.

Note that the first layer 2f1 and the second layer 2f2 can be formed of the same material, or can be formed of different materials. For example, the first layer 2f1 can be formed from an inorganic material, and the second layer 2f2 can be formed from an organic material. The first layer 2f1 can be formed from an organic material, and the second layer 2f2 can be formed from an inorganic material. In this case, if the second layer 2f2 is formed of an organic material, the bonding force between the second layer 2f2 and the scintillator layer 5 can be improved. If the second layer 2f2 is formed of an inorganic material, the bonding force between the second layer 2f2 and the bonding layer 8 can be improved.
Alternatively, the region where the scintillator layer 5 of the second layer 2f2 is provided may be formed from an organic material, and the region outside the region where the scintillator layer 5 of the second layer 2f2 is provided may be formed from an inorganic material. In this way, the bonding force between the second layer 2f2 and the scintillator layer 5 and the bonding force between the second layer 2f2 and the bonding layer 8 can be improved.

The signal processing unit 3 is provided to face the array substrate 2 with the support plate 9 interposed therebetween.
The signal processing unit 3 is provided with a control circuit (not shown) and an amplification / conversion circuit (not shown).
A control circuit (not shown) controls the operation of each thin film transistor 2b2, that is, the on state and the off state. For example, a control circuit (not shown) sequentially applies the control signal S1 to each control line 2c1 via the flexible printed board 2e1, the wiring pad 2d1, and the control line 2c1. The thin film transistor 2b2 is turned on by the control signal S1 applied to the control line 2c1, and the image data signal S2 from the photoelectric conversion unit 2b can be received.

An amplification / conversion circuit (not shown) includes, for example, a plurality of charge amplifiers, a parallel / serial converter, and an analog / digital converter.
The plurality of charge amplifiers are electrically connected to each data line 2c2.
The plurality of parallel / serial converters are electrically connected to the plurality of charge amplifiers, respectively.
The plurality of analog / digital converters are electrically connected to the plurality of parallel / serial converters, respectively.

A plurality of charge amplifiers (not shown) sequentially receive the image data signal S2 from each photoelectric conversion unit 2b via the data line 2c2, the wiring pad 2d2, and the flexible printed board 2e2.
A plurality of charge amplifiers (not shown) sequentially amplify the received image data signal S2.

A plurality of parallel / serial converters (not shown) sequentially convert the amplified image data signal S2 into a serial signal.
A plurality of analog / digital converters (not shown) sequentially convert the image data signal S2 converted into a serial signal into a digital signal.

  The image transmission unit 4 is electrically connected to an amplification / conversion circuit (not shown) of the signal processing unit 3 via a wiring 4a. The image transmission unit 4 may be integrated with the signal processing unit 3.

  The image transmission unit 4 configures an X-ray image based on the image data signal S2 converted into a digital signal by a plurality of analog / digital converters (not shown). The configured X-ray image data is output from the image transmission unit 4 to an external device.

The scintillator layer 5 is provided on the plurality of photoelectric conversion elements 2b1, and converts incident X-rays into fluorescence, that is, visible light.
The scintillator layer 5 is provided so as to cover an area (effective pixel area) where the plurality of photoelectric conversion elements 2b1 are provided.

  The scintillator layer 5 includes, for example, thallium activated cesium iodide (cesium iodide (CsI): thallium (Tl)), thallium activated sodium iodide (sodium iodide (NaI): thallium (Tl)), europium activated cesium bromide (Cesium bromide (CsBr): Europium (Eu)) or the like can be used.

The scintillator layer 5 is an aggregate of columnar crystals.
The scintillator layer 5 made of an aggregate of columnar crystals can be formed using, for example, a vacuum deposition method.
The thickness dimension of the scintillator layer 5 can be about 600 μm, for example. The thickness dimension of the pillars (pillars) of the columnar crystals can be, for example, about 8 μm to 12 μm on the outermost surface.

The scintillator layer 5 can also be formed using, for example, terbium activated gadolinium sulfate (Gd ₂ O ₂ S / Tb, or GOS). In this case, for example, the scintillator layer 5 can be formed as follows. First, particles made of terbium-activated gadolinium sulfate are mixed with a binder material. Next, a mixed material is applied so as to cover the effective pixel area. Next, the applied material is baked. Next, a groove is formed in the fired material using a blade dicing method or the like. At this time, a matrix-like groove portion can be formed so that the quadrangular columnar scintillator layer 5 is provided for each of the plurality of photoelectric conversion portions 2b.

  Further, the groove between the columnar crystals or between the square columnar scintillator layers 5 can be filled with air (air) or an inert gas such as nitrogen gas for preventing oxidation. Moreover, you may make it the groove part between columnar crystals and between the square columnar scintillator layers 5 be in a vacuum state.

  The reflective layer 6 is provided in order to improve the use efficiency of fluorescence and improve sensitivity characteristics. In other words, the reflection layer 6 reflects the light emitted from the scintillator layer 5 toward the side opposite to the side where the photoelectric conversion unit 2b is provided, and is directed toward the photoelectric conversion unit 2b.

The reflective layer 6 covers the X-ray incident side of the scintillator layer 5.
The reflective layer 6 can be provided on at least the upper surface 5 a of the scintillator layer 5. The reflective layer 6 can also be provided on the side surface 5 b of the scintillator layer 5.
The reflective layer 6 can be formed, for example, by applying light scattering particles made of titanium oxide (TiO ₂ ) or the like, a material in which a resin and a solvent are mixed onto the scintillator layer 5 and drying the material. .
The reflective layer 6 can also be formed by depositing a layer made of a metal having a high light reflectance such as a silver alloy or aluminum on the scintillator layer 5.
Moreover, the reflective layer 6 can also be formed using the board which the surface consists of a metal with high light reflectivity, such as a silver alloy and aluminum, for example.

The reflective layer 6 illustrated in FIG. 2 is formed by applying a material prepared by mixing a submicron powder made of titanium oxide, a binder resin, and a solvent to the X-ray incident side of the scintillator layer 5. Is formed by drying.
In this case, the thickness dimension of the reflective layer 6 can be about 100 μm.
The reflective layer 6 is not necessarily required, and may be provided according to characteristics such as resolution and luminance required for the X-ray detector 1.

Further, a fluorescent absorption layer can be provided in place of the reflective layer 6.
That is, the reflective layer 6 or the fluorescence absorption layer can be provided at least between the surface portion 7a1 and the scintillator layer 5. Note that the reflective layer 6 or the fluorescent absorption layer can also be provided between the peripheral surface portion 7 a 2 and the scintillator layer 5.
The fluorescence absorption layer absorbs the light emitted from the scintillator layer 5 toward the side opposite to the side where the photoelectric conversion unit 2b is provided, and does not go to the photoelectric conversion unit 2b.
If a fluorescent absorption layer is provided, the luminance is lowered, but the resolution can be improved.
The fluorescent absorption layer can be formed, for example, by forming a layer made of Fe ₃ O ₄ , CuO, AlTiN or the like on the X-ray incident side of the scintillator layer 5.
The fluorescent absorption layer can also be formed using a black resin sheet or the like.
In the following, a case where the reflective layer 6 is provided will be exemplified.

The moisture-proof body 7 is provided to suppress deterioration of the characteristics of the reflective layer 6 and the scintillator layer 5 due to moisture contained in the air.
The moisture-proof body 7 covers the scintillator layer 5 and the periphery of the area on the array substrate 2 where the scintillator layer 5 is provided.
For example, when the reflective layer 6 is provided, the moisture-proof body 7 includes the reflective layer 6, the side surface 5 b of the scintillator layer 5 exposed from the reflective layer 6, and the region on the array substrate 2 where the scintillator layer 5 is provided. Covers the surroundings.
For example, when the reflective layer 6 is not provided, the moisture-proof body 7 surrounds the upper surface 5a of the scintillator layer 5, the side surface 5b of the scintillator layer 5, and the periphery of the region on the array substrate 2 where the scintillator layer 5 is provided. Covering.

There may be a gap between the moisture-proof body 7 and the reflective layer 6 or the like, or the moisture-proof body 7 and the reflective layer 6 may be in contact with each other.
For example, if the hat-shaped moistureproof body 7 is bonded to the array substrate 2 in an environment where the pressure is lower than the atmospheric pressure, the moistureproof body 7 and the reflective layer 6 can be brought into contact with each other.

The moisture-proof body 7 has a base portion 7a and an inner layer 7b.
FIG. 3A is a schematic front view of the base portion 7a.
FIG. 3B is a schematic side view of the base portion 7a.
As shown in FIGS. 3A and 3B, the base portion 7a has a hat shape, and has a surface portion 7a1, a peripheral surface portion 7a2, and a collar portion 7a3.
The base portion 7a can be formed by integrally molding the surface portion 7a1, the peripheral surface portion 7a2, and the collar portion 7a3.

The surface portion 7 a 1 is opposed to the upper surface 5 a of the scintillator layer 5.
The peripheral surface portion 7a2 is provided so as to surround the periphery of the surface portion 7a1. The peripheral surface portion 7a2 extends from the periphery of the surface portion 7a1 toward the array substrate 2 side. The peripheral surface portion 7 a 2 is provided on the periphery of the surface portion 7 a 1 and faces the side surface 5 b of the scintillator layer 5.

The flange portion 7a3 is provided so as to surround the end portion of the peripheral surface portion 7a2 on the side opposite to the surface portion 7a1 side. The collar portion 7a3 extends outward from the end portion of the peripheral surface portion 7a2. The collar portion 7a3 has an annular shape. The collar portion 7a3 is provided at the end of the peripheral surface portion 7a2 opposite to the surface portion 7a1 side, and faces the array substrate 2.
The flange portion 7a3 is bonded to the upper surface of the array substrate 2 via the inner layer 7b and the bonding layer 8.

If the hat-shaped base 7a is used, the rigidity can be increased.
Further, when the moisture-proof body 7 is bonded to the array substrate 2, positioning can be performed using a three-dimensional shape including the surface portion 7a1 and the peripheral surface portion 7a2.
Therefore, workability and bonding accuracy when bonding the moistureproof body 7 to the upper surface of the array substrate 2 can be improved.

The base 7a can be formed from a material having a small moisture permeability coefficient.
The base 7a can include, for example, a metal material.
The base part 7a can be formed from metal materials, such as a metal containing copper, a metal containing aluminum, stainless steel, a Kovar material, for example. The base 7a can also be formed from, for example, a laminated film in which a resin film and a metal film are laminated. In this case, the resin film may be formed of, for example, polyimide resin, epoxy resin, polyethylene terephthalate resin, Teflon (registered trademark), low density polyethylene, high density polyethylene, elastic rubber, or the like. The metal film may be formed of a metal material such as a metal containing copper, a metal containing aluminum, stainless steel, or Kovar material, for example.
In this case, if the base portion 7a is formed using a metal material having an effective moisture permeability coefficient of almost zero, water that permeates the base portion 7a can be almost completely eliminated.

The thickness dimension of the base portion 7a can be determined in consideration of X-ray absorption, rigidity, and the like. In this case, if the thickness of the base portion 7a is too thick, X-ray absorption becomes too large. If the thickness of the base portion 7a is too thin, the rigidity is reduced and the base portion 7a is easily damaged.
The base 7a can be formed using, for example, an aluminum foil having a thickness dimension of 0.1 mm.

The inner layer 7b is provided on the surface of the base 7a on the scintillator layer 5 side. The inner layer 7b is provided on the surface of the surface portion 7a1 facing the scintillator layer 5, the surface of the peripheral surface portion 7a2 facing the scintillator layer 5, and the surface of the collar portion 7a3 facing the array substrate 2.
Here, CsI contained in the scintillator layer 5 is highly hygroscopic. Therefore, there is a possibility that moisture is adsorbed on the scintillator layer 5 during the manufacturing process of the X-ray detector 1. Moreover, the ionization tendency of Cs contained in CsI is higher than the ionization tendency of aluminum or the like. Therefore, if the base portion 7a containing the metal material and the scintillator layer 5 are directly opposed to each other, the base portion 7a may be corroded or the scintillator layer 5 may be decomposed due to moisture adsorbed on the scintillator layer 5. There is.

Therefore, by providing the inner layer 7b made of an insulating material, corrosion of the base portion 7a and decomposition of the scintillator layer 5 are suppressed.
The inner layer 7b can be formed from an inorganic material, for example. The inner layer 7b can be formed of, for example, a ceramic material such as SiO ₂ , SiON, Al ₂ O ₃ , ZrO ₂ , water glass, quartz glass, liquid crystal glass, or the like.
The inner layer 7b can be formed using, for example, a vapor phase growth method.

If the inner layer 7b is too thin, pinholes are likely to be formed. If pinholes are formed in the inner layer 7b, corrosion of the base portion 7a or decomposition of the scintillator layer 5 may occur through moisture adsorbed on the scintillator layer 5. When the corrosion of the base portion 7a proceeds, a pinhole is generated in the base portion 7a, and the moisture-proof performance of the moisture-proof body 7 may be lowered. When the moisture-proof performance of the moisture-proof body 7 is lowered, the scintillator layer 5 made of CsI: Tl or the like, which is greatly deteriorated with respect to humidity, may be damaged, and the resolution characteristics of the X-ray detector 1 may be significantly lowered.
Therefore, the thickness dimension of the inner layer 7b is preferably 10 μm or more.

Here, generally, organic materials such as resins also have insulating properties. Therefore, the inner layer 7b formed from an organic material can be considered. However, if the inner layer 7b is made of an organic material, the inner layer 7b is thicker. Further, the inner layer 7b provided in the collar portion 7a3 and the bonding layer 8 are formed from an organic material. Therefore, a layer made of a thick organic material is formed between the collar portion 7a3 and the array substrate 2. An organic material has a high moisture permeability coefficient compared to an inorganic material, so that it easily allows moisture to permeate. Further, when the thickness of the layer made of an organic material is increased, moisture is further easily transmitted.
Therefore, if the inner layer 7b is formed from an organic material, moisture may easily enter the moisture-proof body 7.

  On the other hand, when the inner layer 7b is made of an inorganic material, the bonding layer 8 is the only layer made of an organic material formed between the collar portion 7a3 and the array substrate 2. Therefore, it is possible to prevent moisture from entering the moistureproof body 7.

Moreover, there exists a possibility that the joining strength between the base part 7a (collar part 7a3) formed from the metal material and the joining layer 8 formed from the adhesive agent may become low. If the bonding strength between the base portion 7a (the brim portion 7a3) and the bonding layer 8 is lowered, peeling or a gap may occur, and moisture may easily enter the moisture-proof body 7.
On the other hand, when the inner layer 7b made of an inorganic material is provided in the collar portion 7a3, the bonding strength between the collar portion 7a3 (inner layer 7b) and the bonding layer 8 can be improved. Therefore, it is possible to prevent moisture from entering the moistureproof body 7.

  The X-ray detector 1 according to the present embodiment is provided with the moisture-proof body 7 having the base portion 7a containing the metal material and the inner layer 7b containing the inorganic material, so that the reliability with respect to the resolution characteristics can be improved. it can. In addition, the moisture-proof performance can be improved.

As shown in FIG. 2, the bonding layer 8 is provided between the array substrate 2 and the inner layer 7 b provided on the surface of the collar portion 7 a 3 facing the array substrate 2.
The bonding layer 8 bonds the moistureproof body 7 and the array substrate 2 together.
The bonding layer 8 includes, for example, a delayed curable adhesive (a UV curable adhesive in which a curing reaction becomes apparent after a certain time after ultraviolet irradiation), a natural (room temperature) curable adhesive, and a heat curable adhesive. Any of the above may be formed by curing.

The support plate 9 is provided between the array substrate 2 and the signal processing unit 3.
The array substrate 2 is provided on one surface of the support plate 9, and the signal processing unit 3 is provided on the other surface.
The support plate 9 is made of a material that absorbs X-rays such as a lead plate.
The signal processing unit 3 is provided with a control circuit and an amplification / conversion circuit that have low resistance to X-rays. Therefore, by providing a support plate 9 that absorbs X-rays, the control circuit and the amplification / conversion circuit are protected.
The support plate 9 is held inside a housing (not shown) that houses the X-ray detector 1.

  As mentioned above, although several embodiment of this invention was illustrated, these embodiment is shown as an example and is not intending limiting the range of invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, changes, and the like can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and equivalents thereof. Further, the above-described embodiments can be implemented in combination with each other.

  1 X-ray detector, 2 array substrate, 2a substrate, 2b photoelectric conversion unit, 2b1 photoelectric conversion element, 3 signal processing unit, 4 image transmission unit, 5 scintillator layer, 5a upper surface, 5b side surface, 6 reflection layer, 7 moisture barrier 7a base, 7a1 surface, 7a2 peripheral surface, 7a3 collar, 7b inner layer, 8 bonding layer

Claims (4)

An array substrate having a substrate and a plurality of photoelectric conversion elements provided on one surface side of the substrate;
A scintillator layer that is provided on the plurality of photoelectric conversion elements and converts radiation into fluorescence;
A surface portion facing the top surface of the scintillator layer, a peripheral surface portion provided at a peripheral edge of the surface portion and facing a side surface of the scintillator layer, and provided at an end of the peripheral surface portion opposite to the surface portion side. An annular collar facing the array substrate, and a base including a metal material;
An inner layer containing an inorganic material provided on a surface of the surface portion facing the scintillator layer, a surface of the peripheral surface portion facing the scintillator layer, and a surface of the collar portion facing the array substrate;
Radiation detector equipped with. The base is formed of a metal material or a laminated film in which a resin film and a metal film are laminated,
The radiation detector according to claim 1, wherein the inner layer is formed of at least one of a ceramic material, water glass, quartz glass, and liquid crystal glass.   The radiation detector according to claim 1, further comprising a reflection layer or a fluorescence absorption layer provided at least between the surface portion and the scintillator layer.   The radiation according to any one of claims 1 to 3, further comprising a bonding layer provided between the inner layer provided on a surface of the collar portion facing the array substrate and the array substrate. Detector.

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