[go: up one dir, main page]

JP2017059918A - Crystal resonator and manufacturing method therefor - Google Patents

Crystal resonator and manufacturing method therefor Download PDF

Info

Publication number
JP2017059918A
JP2017059918A JP2015181380A JP2015181380A JP2017059918A JP 2017059918 A JP2017059918 A JP 2017059918A JP 2015181380 A JP2015181380 A JP 2015181380A JP 2015181380 A JP2015181380 A JP 2015181380A JP 2017059918 A JP2017059918 A JP 2017059918A
Authority
JP
Japan
Prior art keywords
pair
sealing
collective
support frame
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2015181380A
Other languages
Japanese (ja)
Other versions
JP6744078B2 (en
Inventor
英紀 芦沢
Hidenori Ashizawa
英紀 芦沢
水本 勝也
Katsuya Mizumoto
勝也 水本
義則 木下
Yoshinori Kinoshita
義則 木下
佑亮 山形
Yusuke Yamagata
佑亮 山形
大健 今
Daiken Kon
大健 今
雅樹 宮川
Masaki Miyagawa
雅樹 宮川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
River Eletec Corp
Original Assignee
River Eletec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by River Eletec Corp filed Critical River Eletec Corp
Priority to JP2015181380A priority Critical patent/JP6744078B2/en
Publication of JP2017059918A publication Critical patent/JP2017059918A/en
Application granted granted Critical
Publication of JP6744078B2 publication Critical patent/JP6744078B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a crystal resonator in which a vibration part, having a crystal vibration piece consisting of various vibration modes, can be hermetically sealed easily and reliably by a pair of sealing bodies, and electrical connection of the crystal vibration piece and the outside can be enhanced.SOLUTION: A crystal resonator 11 includes a vibrator 12 having a crystal vibration piece, and a pair of sealing bodies 13, 14 for sealing this vibrator 12. The sealing bodies 13, 14 are bonded via conductive layers 30 formed on the upper and lower surfaces of the vibrator 12, and external electrodes 25a, 25b are formed and coat so as to cover side faces of the conductive layers 30 exposed on the side faces of the bonded vibrator 12 and sealing bodies 13, 14. The sealing bodies 13, 14 are bonded so that the upper and lower surfaces of the conductive layers 30 are exposed partially, and the external electrodes 25a, 25b are formed to cover a part of the upper and lower surfaces from the side face of the exposed conductive layers 30.SELECTED DRAWING: Figure 3

Description

本発明は、各種の振動モードからなる水晶振動片を有する振動体と、この振動体を封止する一対の封止体とからなる水晶振動子及びその製造方法に関するものである。   The present invention relates to a quartz crystal resonator including a vibrating body having a crystal vibrating piece having various vibration modes and a pair of sealing bodies that seal the vibrating body, and a method for manufacturing the same.

従来の一般的な水晶振動子は、所定の振動モード及び形状からなる水晶振動片と、この水晶振動片を収容するセラミック製のケース及び前記水晶振動片を封止する金属製の蓋体とによって形成されている。前記水晶振動片は、振動腕部を保持する基端部が前記ケース内に設けられている電極部に導電性の接合剤を介して電気的に接続される。   A conventional general crystal resonator includes a crystal resonator element having a predetermined vibration mode and shape, a ceramic case that accommodates the crystal resonator element, and a metal lid that seals the crystal resonator element. Is formed. In the quartz crystal resonator element, a base end portion that holds a vibrating arm portion is electrically connected to an electrode portion provided in the case via a conductive bonding agent.

一方、前記水晶振動片を水晶ウェハからエッチング等によって形成された振動体と、この振動体を挟持することによって前記水晶振動片を封入する一対のウェハ状の封止体とを一体的に形成するウェハレベルパッケージによって製造された水晶振動子が知られている。   On the other hand, a vibrating body formed by etching or the like from the quartz crystal wafer and a pair of wafer-like sealing bodies that enclose the quartz vibrating piece are formed integrally by sandwiching the vibrating body. A crystal resonator manufactured by a wafer level package is known.

特許文献1,2には上記ウェハレベルパッケージによって形成された水晶振動子が開示されている。このウェハレベルパッケージによる水晶振動子は、各種振動モードの水晶振動片及びこの水晶振動片を囲うようにして一端が支持される支持枠とからなる振動体と、前記水晶振動片を封入する一対の封止体とを水晶ウェハからエッチング等によって打ち抜き形成し、前記振動体を一対の封止体で挟み込んで積層することによって形成されている。   Patent Documents 1 and 2 disclose a crystal resonator formed by the wafer level package. The crystal unit using the wafer level package includes a vibrating body composed of a crystal vibrating piece of various vibration modes and a support frame supported at one end so as to surround the crystal vibrating piece, and a pair of enclosing the crystal vibrating piece. The sealing body is formed by punching from a quartz wafer by etching or the like, and the vibrating body is sandwiched and stacked between a pair of sealing bodies.

特開2004−328442号公報JP 2004-328442 A 特許第4707021号公報Japanese Patent No. 4770721

上記ウェハレベルパッケージによって形成される水晶振動子は、一枚の水晶ウェハから一括して大量の水晶振動子を製造できるので、製造工数及び製造コストの低廉化や水晶振動子自体の小型化及び薄型化が図られるといった利点を有したものとなっている。   Since the crystal resonator formed by the wafer level package can manufacture a large amount of crystal resonators from a single crystal wafer, the number of manufacturing steps and the manufacturing cost can be reduced, and the crystal resonator itself can be made smaller and thinner. It has the advantage of being realized.

このようなウェハレベルパッケージにあっては、振動体の支持枠に水晶振動片との電気的接続を図る内部電極が形成されるが、前記振動体を一対の封止体で挟み込んで形成されるため、前記内部電極の厚み分しか外部に露出しないこととなる。このため、外部に設けられる外部電極を介して前記内部電極との電気的接続を図る場合、従来の水晶振動子の構造では振動体の内部電極とスパッタリング等で形成された外部電極との接触部分が前記内部電極の厚みと略同じ1000Å〜2000Åほどしかないため、導通不良が発生したり、接続部分の電気抵抗値が高くなったりするなどの電気的特性に問題が生じる場合があった。   In such a wafer level package, an internal electrode for electrical connection with a crystal vibrating piece is formed on the support frame of the vibrating body, and is formed by sandwiching the vibrating body between a pair of sealing bodies. Therefore, only the thickness of the internal electrode is exposed to the outside. For this reason, when an electrical connection with the internal electrode is made via an external electrode provided outside, the contact portion between the internal electrode of the vibrator and the external electrode formed by sputtering or the like in the structure of the conventional crystal unit However, since the thickness is only about 1000 to 2000 mm which is substantially the same as the thickness of the internal electrode, there may be a problem in electrical characteristics such as poor conduction or an increase in the electrical resistance value of the connection portion.

前記内部電極の引き回しに関しては、従来であれば、基板にスルーホール配線を形成し、励振電極から延びた引出電極と外部端子を接続する方法がとられる。しかしながら、パッケージサイズが小さくなるにしたがって、スルーホールの形成が困難となる。このように、スルーホール形成の工程に時間とコストがかかると共に強度面において問題があった。   With respect to the routing of the internal electrode, conventionally, a method of forming a through-hole wiring on a substrate and connecting an extraction electrode extending from the excitation electrode and an external terminal is used. However, as the package size decreases, it becomes difficult to form a through hole. As described above, the process of forming a through hole takes time and cost, and there is a problem in strength.

振動体の封止に関しては、水晶振動片を真空に近い状態にする必要がある。このため、上記特許文献1では、封止体の一部に通気孔を予め設けておき、減圧環境下で振動体を一対の封止体で接合した後に、前記通気孔を外側から閉塞することで前記水晶振動片を気密封止している。一方、上記特許文献2では、振動体や封止体の一部に通気孔を設け、前記封止体で振動体を接合した後に、前記通気孔を半田やスズ等で閉塞している。しかしながら、ウェハ状の振動体や封止体に対して直接通気孔を開設しようとすると、変形やクラック等が生じるといった問題があった。また、前記通気孔を後から閉塞させるための部材が必要となるなど、別途材料費や工数がかかるといった問題があった。   Regarding sealing of the vibrating body, it is necessary to make the crystal vibrating piece close to a vacuum. For this reason, in Patent Document 1, a vent is provided in advance in a part of the sealing body, and after the vibrating body is joined with a pair of sealing bodies in a reduced pressure environment, the vent is closed from the outside. The quartz crystal resonator element is hermetically sealed. On the other hand, in Patent Document 2, a ventilation hole is provided in a part of a vibrating body or a sealing body, and after the vibration body is joined with the sealing body, the ventilation hole is closed with solder, tin, or the like. However, there is a problem that deformation, cracks, and the like occur when opening a vent hole directly on a wafer-like vibrating body or sealing body. In addition, there is a problem that additional material costs and man-hours are required, for example, a member for closing the vent hole later is required.

また、従来のウェハレベルパッケージの製造工程にあっては、振動体及び一対の封止体をダイシングで小片に分割した後に端子形成を行い、外部電極によって振動体と封止体との導通を確保する際、ダイシングによるクラックや汚れあるいはダイシングカスによって、真空引き用の通気路や振動体と外部端子との導通部分が目詰まりするなど端子形成の際の真空度の確保が難しく、導通不良が起こりやすいといった問題がある。また、パッケージが小片に分割されてしまうため、後工程(スパッタリング、周波数調整)を小片で行う必要があり、製造工数が増加するといった問題もあった。   In addition, in the conventional wafer level package manufacturing process, the vibrating body and the pair of sealing bodies are divided into small pieces by dicing, and terminals are formed, and conduction between the vibrating body and the sealing body is ensured by external electrodes. When forming the terminal, it is difficult to secure the degree of vacuum when forming the terminal, such as clogging of the air passage for vacuuming or the conductive part between the vibrating body and the external terminal due to cracks, dirt or dicing residue due to dicing. There is a problem that it is easy. Further, since the package is divided into small pieces, it is necessary to perform the post-process (sputtering, frequency adjustment) with the small pieces, which increases the number of manufacturing steps.

そこで、本発明の目的は、各種の振動モードからなる水晶振動片を有する振動部を一対の封止体によって容易且つ確実に気密封止することができると共に、前記水晶振動片と外部との電気的接続の向上化を図ることのできる水晶振動子及びその製造方法を提供することにある。   Accordingly, an object of the present invention is to easily and reliably hermetically seal a vibrating portion having a quartz crystal vibrating piece having various vibration modes with a pair of sealing bodies, and to electrically connect the quartz vibrating piece and the outside. It is an object of the present invention to provide a crystal resonator and a method of manufacturing the same that can improve the general connection.

上記課題を解決するために、本発明の水晶振動子は、水晶振動片とこの水晶振動片の少なくとも一端を支持する支持枠とからなる振動体と、前記支持枠の上下面にそれぞれ接合される当接面及び内側に凹部を有する一対の封止体とを有し、前記支持枠の上下面にそれぞれに形成される導電層を介して前記一対の封止体の当接面が接合され、接合された前記振動体及び一対の封止体の側面に露出する前記導電層の側面を覆うようにして外部電極が被覆形成される水晶振動子であって、前記導電層の側面から上面及び下面の一端を露出するようにして前記一対の封止体の当接面を接合し、この導電層の側面から上面及び下面の一端を被覆するようにして前記外部電極が形成されることを特徴とする。   In order to solve the above-described problems, a crystal resonator according to the present invention is bonded to a vibrating body including a crystal vibrating piece and a support frame that supports at least one end of the crystal vibrating piece, and an upper surface and a lower surface of the support frame. A pair of sealing bodies having a contact surface and a concave portion on the inside, and the contact surfaces of the pair of sealing bodies are bonded to the upper and lower surfaces of the support frame via conductive layers formed respectively. A quartz resonator in which an external electrode is formed so as to cover the side surfaces of the conductive layer exposed on the side surfaces of the bonded vibrating body and the pair of sealing bodies, and includes an upper surface and a lower surface from the side surfaces of the conductive layer. The contact surfaces of the pair of sealing bodies are bonded so as to expose one end of the conductive layer, and the external electrode is formed so as to cover one end of the upper surface and the lower surface from the side surface of the conductive layer. To do.

本発明の水晶振動子の製造方法は、水晶振動片及びこの水晶振動片の少なくとも一端を支持する支持枠からなる振動体を集合振動基板に複数形成する工程と、前記支持枠の上下面にそれぞれ接合される当接面と内側に凹部とを有する封止体を一対の集合封止基板に複数形成する工程と、前記集合振動基板に形成された各振動体の対向する一対の側面及び前記一対の集合封止基板に形成された各封止体の対向する一対の側面に沿ってそれぞれ貫通孔を設ける工程と、前記集合振動基板の上下面に前記一対の集合封止基板を位置合わせし、前記集合振動基板に形成された各振動体の支持枠と前記一対の集合封止基板に形成された各封止体の当接面とを導電層を介して接合する工程と、前記貫通孔の内壁面に沿って、前記集合振動基板に形成された各振動体の対向する一対の側面及び前記一対の集合封止基板に形成された各封止体の対向する一対の側面に外部電極を形成する工程と、前記接合された集合振動基板及び集合封止基板を所定方向にダイシングして個々の水晶振動子に分割する工程とを備えることを特徴とする。   The method for manufacturing a crystal resonator according to the present invention includes a step of forming a plurality of vibrators on a collective vibration substrate including a crystal vibrating piece and a support frame that supports at least one end of the crystal vibrating piece, respectively on the upper and lower surfaces of the support frame. A step of forming a plurality of sealing bodies having a contact surface to be joined and a concave portion on the inside thereof on a pair of collective sealing substrates, a pair of opposing side surfaces of each vibrating body formed on the collective vibration substrate, and the pair A step of providing through holes along a pair of opposing side surfaces of each sealing body formed on the assembly sealing substrate, and positioning the pair of assembly sealing substrates on the upper and lower surfaces of the assembly vibration substrate, Bonding a support frame of each vibrating body formed on the collective vibration substrate and a contact surface of each sealing body formed on the pair of collective sealing substrates via a conductive layer; and Along the inner wall surface, formed on the collective vibration substrate Forming an external electrode on a pair of opposing side surfaces of the vibrating body and a pair of opposing side surfaces of each sealing body formed on the pair of collective sealing substrates; and the joined collective vibration substrate and collective sealing And a step of dicing the substrate in a predetermined direction to divide the substrate into individual crystal resonators.

本発明の水晶振動子によれば、振動体と一対の封止体とを導電層を介して接合させる際、前記導電層の側面及び上下面の一端が露出することで、この露出した部分を外部電極の電気的な接続面とすることができる。これによって、小型化及び薄型化が進む水晶振動子の外部電極形成が容易になると共に、前記振動体に対して良好な導電性を得ることができる。   According to the crystal resonator of the present invention, when the vibrating body and the pair of sealing bodies are bonded via the conductive layer, the side surface of the conductive layer and one end of the upper and lower surfaces are exposed, so that the exposed portion is It can be an electrical connection surface of the external electrode. This facilitates the formation of external electrodes for crystal resonators that are becoming smaller and thinner, and provides good conductivity for the vibrator.

また、前記振動体と一対の封止体とを接合する導電層に通気路を設けた場合にあっては、振動体や一対の封止体に孔部を設けるような加工を要することなく、一対の封止体によって接合された凹部内の空気を外部に抜くことができる。また、前記振動体及び封止体の一側面において前記通気路の一端部を閉塞することで、前記振動体や封止体に変形やクラック等を生じさせることなく、容易且つ確実に振動体を気密封止することができる。   In addition, in the case where a ventilation path is provided in the conductive layer that joins the vibrating body and the pair of sealing bodies, without requiring processing such as providing holes in the vibrating body or the pair of sealing bodies, The air in the recessed part joined by a pair of sealing bodies can be extracted outside. Further, by closing one end portion of the air passage on one side surface of the vibrating body and the sealing body, the vibrating body can be easily and reliably formed without causing deformation or cracking in the vibrating body or the sealing body. It can be hermetically sealed.

本発明の水晶振動子の製造方法によれば、複数の振動体が形成される集合振動基板と、複数の封止体が形成される集合封止基板とによって、複数の水晶振動子を一括して形成することができる。また、前記集合振動基板に形成された各振動体の対向する一対の側面及び前記一対の集合封止基板に形成された各封止体の対向する一対の側面に沿ってそれぞれ貫通孔を設け、この貫通孔の内壁面に沿ってスパッタリングを施すことで、外部電極を一括して形成することができる。   According to the method for manufacturing a crystal resonator of the present invention, a plurality of crystal resonators are collectively formed by a collective vibration substrate on which a plurality of vibration bodies are formed and a collective sealing substrate on which a plurality of sealing bodies are formed. Can be formed. In addition, through holes are provided along a pair of opposing side surfaces of each vibrating body formed on the collective vibration substrate and a pair of opposing side surfaces of each sealing body formed on the pair of collective sealing substrates, By performing sputtering along the inner wall surface of the through hole, the external electrodes can be collectively formed.

また、前記集合振動基板と一対の集合封止基板とを接合させるための導電層の一部に通気路を設けておくことで、減圧環境下での気密封止作業を確実且つ容易にすることができる。   In addition, by providing an air passage in a part of the conductive layer for joining the collective vibration substrate and the pair of collective sealing substrates, the hermetic sealing operation in a reduced pressure environment is surely and easily performed. Can do.

本発明の第1実施形態の水晶振動子の分解斜視図である。1 is an exploded perspective view of a crystal resonator according to a first embodiment of the present invention. 上記水晶振動子を構成する振動体及び一対の封止体の積層構造を示す断面図である。It is sectional drawing which shows the laminated structure of the vibrating body which comprises the said crystal oscillator, and a pair of sealing body. 外部電極を設けた水晶振動子の斜視図である。It is a perspective view of the crystal oscillator which provided the external electrode. 外部電極を設けた水晶振動子の断面図である。It is sectional drawing of the crystal oscillator which provided the external electrode. 振動体及び一対の封止体に形成される内部(接続)電極の形成例を示す平面図である。It is a top view which shows the example of formation of the internal (connection) electrode formed in a vibrating body and a pair of sealing body. 上記内部電極及び外部電極が形成された水晶振動子の断面図である。It is sectional drawing of the crystal oscillator in which the said internal electrode and the external electrode were formed. 段差を有して接合される振動体及び一対の封止体の断面図である。It is sectional drawing of the vibrating body and a pair of sealing body which are joined with a level | step difference. 集合振動基板及び一対の集合封止基板の形成工程を示す平面図である。It is a top view which shows the formation process of a collective vibration board | substrate and a pair of collective sealing board | substrate. 集合振動基板及び一対の集合封止基板の積層工程及び外部電極形成工程を示す斜視図である。It is a perspective view which shows the lamination | stacking process and external electrode formation process of a collective vibration board | substrate and a pair of collective sealing board | substrate. 本発明の第2実施形態の水晶振動子の分解斜視図である。It is a disassembled perspective view of the crystal oscillator of 2nd Embodiment of this invention. 上記水晶振動子を構成する振動体及び一対の封止体の積層構造を示す断面図である。It is sectional drawing which shows the laminated structure of the vibrating body which comprises the said crystal oscillator, and a pair of sealing body. 外部電極を設けた水晶振動子の斜視図である。It is a perspective view of the crystal oscillator which provided the external electrode. 外部電極を設けた水晶振動子の断面図である。It is sectional drawing of the crystal oscillator which provided the external electrode. 振動体及び一対の封止体に形成される内部(接続)電極の形成例を示す平面図である。It is a top view which shows the example of formation of the internal (connection) electrode formed in a vibrating body and a pair of sealing body. 上記外部電極とは別の封止部材によって通気路を閉塞した水晶振動子の斜視図である。It is a perspective view of the crystal oscillator which closed the air passage with the sealing member different from the above-mentioned external electrode. 振動体の他の実施形態の平面図である。It is a top view of other embodiments of a vibrating body.

以下、本発明の水晶振動子の実施形態を添付図面に基づいて詳細に説明する。図1乃至図6は、第1実施形態の水晶振動子11を示したものである。この水晶振動子11は、ウェハ状の振動体12と、この振動体12を表裏両面から挟み込んで封止する一対のウェハ状の封止体13,14との三層構造によって構成されている。この水晶振動子11は、後述するように所定のカット角で形成された水晶ウェハをエッチング及びダイシングすることによって、前記振動体12及び一対の封止体13,14を形成し、減圧環境下においてそれぞれが所定厚みの導電性の金属膜からなる導電層30を介して溶接接合されている。   Hereinafter, embodiments of the crystal resonator of the present invention will be described in detail with reference to the accompanying drawings. 1 to 6 show the crystal resonator 11 of the first embodiment. The crystal unit 11 has a three-layer structure including a wafer-like vibrating body 12 and a pair of wafer-like sealing bodies 13 and 14 that sandwich and seal the vibrating body 12 from both front and back surfaces. As will be described later, the crystal unit 11 forms the vibrating body 12 and the pair of sealing bodies 13 and 14 by etching and dicing a crystal wafer formed at a predetermined cut angle, and in a reduced pressure environment. Each is weld-joined through a conductive layer 30 made of a conductive metal film having a predetermined thickness.

前記水晶ウェハは、電気軸をX軸、機械軸をY軸、光軸をZ軸とした水晶原石の直交座標系において、Z軸平面から約1°X軸回転させたカット角で板状に薄くスライスすることによって形成される。そして、この水晶ウェハに対してフォトリソ工程によってマスクパターンを形成し、水晶エッチングを施すことによって、基部18と、この基部18から平行に延びる一対の振動腕部19とからなる音叉型の水晶振動片15と、この水晶振動片15の外周を取り囲む四角形状の支持枠16と、この支持枠16の一端と前記基部18の一端とを連結する連結部17とからなる振動体12が形成される。前記振動腕部19は、厚みが50〜200μmで、振動周波数に応じて長さ及び幅が設定される。また、一対の封止体13,14も同様に、エッチングによって、四角形状の当接面21と、前記水晶振動片15を収容するための凹部23が形成される。なお、前記振動体12及び一対の封止体13,14の形状は、微細加工に適したレーザやパウダービームを用いた切断や打ち抜きによって形成することもできる。   The quartz wafer is shaped like a plate with a cut angle obtained by rotating the X axis about 1 ° from the Z axis plane in an orthogonal coordinate system of the rough crystal with the X axis as the electrical axis, the Y axis as the mechanical axis, and the Z axis as the optical axis. It is formed by thinly slicing. Then, a mask pattern is formed on the crystal wafer by a photolithography process, and crystal etching is performed, so that a tuning-fork type crystal vibrating piece including a base 18 and a pair of vibrating arms 19 extending in parallel from the base 18 is obtained. 15 and a rectangular support frame 16 that surrounds the outer periphery of the crystal vibrating piece 15 and a connecting body 17 that connects one end of the support frame 16 and one end of the base 18 are formed. The vibrating arm portion 19 has a thickness of 50 to 200 μm, and the length and width are set according to the vibration frequency. Similarly, the pair of sealing bodies 13 and 14 are also formed by etching with a rectangular contact surface 21 and a recess 23 for accommodating the crystal vibrating piece 15. The shapes of the vibrating body 12 and the pair of sealing bodies 13 and 14 can also be formed by cutting or punching using a laser or powder beam suitable for fine processing.

前記振動体12及び一対の封止体13,14の接合は、支持枠16の両面及び一対の当接面21の各全周面に形成された導電層30同士を当接した後、溶着することによって行われる。   The vibrating body 12 and the pair of sealing bodies 13 and 14 are welded after contacting the conductive layers 30 formed on both circumferential surfaces of the support frame 16 and the pair of contact surfaces 21. Is done by.

本実施形態では、図1乃至図6に示したように、前記一対の封止体13,14の少なくとも一の側面13a,14aを振動体12に向かうように内側に向けて傾斜させた。これによって、前記側面13a,14a以外の他の側面を前記振動体12の支持枠16の側面に合わせて接合した際、前記封止体13の側面13a側には、導電層30の側面30aと、上面30bの一端を露出させることができる。また、前記封止体14の側面14a側には、導電層30の側面30aと、下面30cの一端を露出させることができる。その結果、図3及び図4に示したように、水晶振動子11の外周面に沿って一対の外部電極25a,25bをスパッタリング等によって形成する際、前記導電層30の側面30aから上面30b又は下面30cの一端に沿って被覆させることができる。   In the present embodiment, as shown in FIGS. 1 to 6, at least one side surface 13 a, 14 a of the pair of sealing bodies 13, 14 is inclined inward toward the vibrating body 12. Thus, when the other side surfaces other than the side surfaces 13a and 14a are joined to the side surface of the support frame 16 of the vibrating body 12, the side surface 13a of the conductive layer 30 and the side surface 13a side of the sealing body 13 are connected. One end of the upper surface 30b can be exposed. Further, the side surface 30 a of the conductive layer 30 and one end of the lower surface 30 c can be exposed on the side surface 14 a side of the sealing body 14. As a result, as shown in FIGS. 3 and 4, when the pair of external electrodes 25a and 25b are formed by sputtering or the like along the outer peripheral surface of the quartz crystal resonator 11, the side surface 30a to the upper surface 30b of the conductive layer 30 or It can be coated along one end of the lower surface 30c.

前記導電層30の側面30aは、導電層30を形成する金属材料の厚みに依存するため、この厚み分だけでは外部電極25a,25bとの電気的接続が十分ではないが、前記封止体13,14の一部の側面13a,14aを傾斜させることによって、導電層30の上面30b及び下面30cの一端についても電気的接続面とすることが可能となった。これによって、外部電極25a,25bと導電層30との接触面積が増し、電気的な接触不良を防止することができると共に、この導電層30と電気的に接続される水晶振動片15に安定した電力を供給することができる。また、前記外部電極25a,25bと電気的な接合部分が導電層30の側面30aから上面30b及び下面30cの一端に広がるので、接合部分の電気抵抗が低減し、水晶振動片15における等価直列抵抗の低減効果も得られる。   Since the side surface 30a of the conductive layer 30 depends on the thickness of the metal material forming the conductive layer 30, the electrical connection with the external electrodes 25a and 25b is not sufficient only by this thickness, but the sealing body 13 , 14 can be made to be electrically connected to one end of the upper surface 30b and the lower surface 30c of the conductive layer 30 by inclining some of the side surfaces 13a, 14a. As a result, the contact area between the external electrodes 25a and 25b and the conductive layer 30 can be increased to prevent electrical contact failure, and the crystal vibrating piece 15 electrically connected to the conductive layer 30 can be stabilized. Electric power can be supplied. In addition, since the electrical junction with the external electrodes 25a and 25b extends from the side surface 30a of the conductive layer 30 to one end of the upper surface 30b and the lower surface 30c, the electrical resistance of the junction is reduced, and the equivalent series resistance in the crystal vibrating piece 15 is reduced. Can also be obtained.

前記一対の封止体13,14は、図8に示すように、一対の集合封止基板43,44からウェットエッチングによって抜き加工をする際に、エッチング速度の異方性を利用することができる。このエッチング速度の異方性によって、エッチングの深さ方向に対して傾斜した側面13a,14aを形成することができる。このウェットエッチングは、前記封止体13,14の傾斜したい側面に対して行えばよく、他の側面については、ダイシングによって切断することができる。   As shown in FIG. 8, the pair of sealing bodies 13 and 14 can utilize anisotropy in etching rate when the pair of sealing bodies 13 and 14 are removed from the pair of collective sealing substrates 43 and 44 by wet etching. . Due to the anisotropy of the etching rate, the side surfaces 13a and 14a inclined with respect to the etching depth direction can be formed. This wet etching may be performed on the side surfaces of the sealing bodies 13 and 14 which are desired to be inclined, and the other side surfaces can be cut by dicing.

前記ウェットエッチングによって傾斜加工した側面13a,14aに沿うようにスパッタリング、メッキあるいはハンダ等を施すことによって外部電極25a,25bを形成することができる。   The external electrodes 25a and 25b can be formed by performing sputtering, plating, or soldering along the side surfaces 13a and 14a inclined by the wet etching.

前記導電層30は、一対の外部電極25a,25bと振動体12内の水晶振動片15に形成される一対の励振電極との電気的接続を図るための内部電極として形成されている。図5は前記内部電極の構成例を示したものであり、図6は前記内部電極の断面構成を示したものである。ここで、図5(a)は振動体12の支持枠16の上面と、この上面に対向する封止体13の当接面21とを見開きで示したものであり、図5(b)は振動体12の支持枠16の下面と、この下面に対向する封止体14の当接面21とを見開きで示したものである。前記振動体12における水晶振動片15の表面には、基部18から一対の振動腕部19にかけて一対の励振電極31a,31bがパターン形成されている。なお、この実施形態では支持枠16の上下面及びこの上下面に接合される一対の封止体13,14の各当接面21の両方に、それぞれ導電層30を設けているが、一対の封止体13,14のそれぞれの当接面21に形成される導電層30は支持枠16及び外部電極25a,25bとの接合に寄与するものであるので、前記導電層30は少なくとも支持枠16の上下面に形成されていればよい。   The conductive layer 30 is formed as an internal electrode for electrical connection between the pair of external electrodes 25 a and 25 b and the pair of excitation electrodes formed on the crystal vibrating piece 15 in the vibrating body 12. FIG. 5 shows a configuration example of the internal electrode, and FIG. 6 shows a cross-sectional configuration of the internal electrode. Here, FIG. 5A shows the upper surface of the support frame 16 of the vibrating body 12 and the contact surface 21 of the sealing body 13 opposed to the upper surface, and FIG. The lower surface of the support frame 16 of the vibrating body 12 and the contact surface 21 of the sealing body 14 facing the lower surface are shown in a double spread. A pair of excitation electrodes 31 a and 31 b are formed in a pattern from the base 18 to the pair of vibrating arms 19 on the surface of the crystal vibrating piece 15 in the vibrating body 12. In this embodiment, the conductive layer 30 is provided on both the upper and lower surfaces of the support frame 16 and the contact surfaces 21 of the pair of sealing bodies 13 and 14 joined to the upper and lower surfaces. Since the conductive layer 30 formed on each contact surface 21 of the sealing bodies 13 and 14 contributes to the bonding between the support frame 16 and the external electrodes 25a and 25b, the conductive layer 30 is at least the support frame 16. What is necessary is just to be formed in the upper and lower surfaces.

前記水晶振動片15を囲う支持枠16の上面には、前記それぞれの励振電極31a,31bと対応する第1の内部電極32a,第2の内部電極32bが支持枠16の一対の対向する側面に沿って設けられる絶縁部34を隔てて形成されている(図5(a))。なお、前記第2の内部電極32bは、支持枠16の一方の側面16bに露出させるためだけに設けられる。   A first internal electrode 32 a and a second internal electrode 32 b corresponding to the respective excitation electrodes 31 a and 31 b are formed on a pair of opposing side surfaces of the support frame 16 on the upper surface of the support frame 16 that surrounds the crystal vibrating piece 15. It is formed with an insulating portion 34 provided along the gap (FIG. 5A). The second internal electrode 32b is provided only to be exposed on one side surface 16b of the support frame 16.

一方、前記支持枠16の裏面には、前記励振電極31a,31bと対応する第1の内部電極32a,第2の内部電極32bが支持枠16の一対の対向する側面に沿って設けられる絶縁部34を隔てて形成されている(図5(b))。なお、前記第1の内部電極32aは、支持枠16の他方の側面16aに露出させるためだけに設けられる。   On the other hand, on the back surface of the support frame 16, the first internal electrode 32 a and the second internal electrode 32 b corresponding to the excitation electrodes 31 a and 31 b are provided along a pair of opposing side surfaces of the support frame 16. 34 (FIG. 5B). The first internal electrode 32a is provided only to expose the other side surface 16a of the support frame 16.

図5(a)に示したように、前記支持枠16の表面に対応する封止体13の当接面21には、この支持枠16の表面に形成されている第1の内部電極32a,第2の内部電極32bと面対称となるような第1の内部電極33a,第2の内部電極33bがパターン形成される。また、図5(b)に示したように、前記支持枠16の裏面に対応する封止体14の当接面21には、支持枠16の裏面に形成されている第1の内部電極32a,第2の内部電極32bと面対称となるような第1の内部電極33a,第2の内部電極33bがパターン形成される。   As shown in FIG. 5A, the first inner electrode 32a formed on the surface of the support frame 16 is formed on the contact surface 21 of the sealing body 13 corresponding to the surface of the support frame 16. The first internal electrode 33a and the second internal electrode 33b are formed in a pattern so as to be plane-symmetric with the second internal electrode 32b. Further, as shown in FIG. 5B, the first internal electrode 32 a formed on the back surface of the support frame 16 is formed on the contact surface 21 of the sealing body 14 corresponding to the back surface of the support frame 16. The first internal electrode 33a and the second internal electrode 33b are formed in a pattern so as to be symmetrical with the second internal electrode 32b.

図7は、上記封止体13,14の他の実施形態を示したものである。この実施形態の水晶振動子は、封止体13,14の外形サイズを支持枠16よりも小さく形成することによって、側面13a,14a側に段差を有した状態で積層したものである。このような段差を設けたことで、前記導電層30の側面30aから上面30b及び下面30cの一端に接するようにして一対の外部電極25a,25bを被覆形成することができる。   FIG. 7 shows another embodiment of the sealing bodies 13 and 14. In the crystal resonator of this embodiment, the sealing bodies 13 and 14 are formed to have an outer size smaller than that of the support frame 16, and are stacked with a step on the side surfaces 13 a and 14 a side. By providing such a step, the pair of external electrodes 25a and 25b can be formed so as to be in contact with one end of the upper surface 30b and the lower surface 30c from the side surface 30a of the conductive layer 30.

振動体12と一対の封止体13,14との積層構造において、外周面に露出する導電層30の側面30aだけで外部電極25a,25bとの電気的接続を図ろうとすると、十分な導電性が得られないが、上記図1乃至図7に示したような構成にすることによって、外部電極25a,25bから導電層30を経て水晶振動片15の励振電極に至る間の導電性を向上させることが可能となる。また、前記一対の外部電極25a,25bと導電層30との機械的な接合強度が高まるので、外部からの衝撃や外部環境等による導電不良や導通不良なども起こり難くなる。   In the laminated structure of the vibrating body 12 and the pair of sealing bodies 13 and 14, sufficient electrical conductivity can be obtained if an electrical connection with the external electrodes 25 a and 25 b is attempted only by the side surface 30 a of the conductive layer 30 exposed on the outer peripheral surface. 1 to 7, the conductivity between the external electrodes 25 a and 25 b through the conductive layer 30 and the excitation electrode of the quartz crystal resonator element 15 is improved. It becomes possible. In addition, since the mechanical bonding strength between the pair of external electrodes 25a and 25b and the conductive layer 30 is increased, it is difficult to cause poor conduction or poor conduction due to an external impact or the external environment.

図8及び図9は、上記実施形態の水晶振動子11の製造方法を示したものである。この水晶振動子11は、複数の振動体12が形成される集合振動基板42と、複数の封止体13,14が形成される一対の集合封止基板43,44とによって形成される。   8 and 9 show a method for manufacturing the crystal unit 11 of the above embodiment. The crystal unit 11 is formed by a collective vibration substrate 42 on which a plurality of vibrators 12 are formed, and a pair of collective sealing substrates 43 and 44 on which a plurality of sealing bodies 13 and 14 are formed.

前記集合振動基板42には、四角形状の支持枠16と、この支持枠16の内側に連結部17を介して延びる音叉型の水晶振動片15とからなる振動体12が複数配列される。前記それぞれの振動体形成領域は、フォトリソ工程によって形成されたマスクパターンを介して水晶エッチングを施すことによって打ち抜き形成されると共に、前記水晶振動片15の表面に一対の励振電極が形成され、前記支持枠16の表裏面には前記一対の励振電極と電気的に接続される内部電極がパターン形成される。   On the collective vibration substrate 42, a plurality of vibrating bodies 12 including a square-shaped support frame 16 and a tuning-fork type crystal vibrating piece 15 extending inside the support frame 16 via a connecting portion 17 are arranged. Each of the vibrating body forming regions is punched and formed by performing quartz etching through a mask pattern formed by a photolithography process, and a pair of excitation electrodes are formed on the surface of the quartz vibrating piece 15, Internal electrodes that are electrically connected to the pair of excitation electrodes are patterned on the front and back surfaces of the frame 16.

一方、一対の集合封止基板43,44には、前記支持枠16に対応する当接面21と、この当接面21の内部を所定の深さにエッチングして形成した凹部23とからなる封止体13,14が複数配列される。前記それぞれの封止体形成領域は、フォトリソ工程によって形成されたマスクパターンを介して水晶エッチングを施すことによって打ち抜き形成されている。   On the other hand, the pair of collective sealing substrates 43 and 44 includes a contact surface 21 corresponding to the support frame 16 and a recess 23 formed by etching the inside of the contact surface 21 to a predetermined depth. A plurality of the sealing bodies 13 and 14 are arranged. Each of the sealing body forming regions is punched and formed by performing crystal etching through a mask pattern formed by a photolithography process.

また、前記集合振動基板42に形成される各支持枠16及び一対の集合封止基板43,44に形成される各当接面21の対向する辺の外側に沿って所定幅の貫通孔45がそれぞれ形成される。この貫通孔45は、積層された振動体12及び一対の封止体13,14の外周面に沿って外部電極25a,25bを形成するために設けられるものである。前記外部電極25a,25bは、スパッタリングによって形成される。   Further, through holes 45 having a predetermined width are formed along the outer sides of the opposite sides of the contact surfaces 21 formed on the support frames 16 and the pair of collective sealing substrates 43 and 44 formed on the collective vibration substrate 42. Each is formed. The through hole 45 is provided to form the external electrodes 25 a and 25 b along the outer peripheral surfaces of the laminated vibrator 12 and the pair of sealing bodies 13 and 14. The external electrodes 25a and 25b are formed by sputtering.

図9は、真空度が1.0×10Pa以下の減圧環境下での製造工程を示したものである。このような減圧環境の下で図9(a)に示すように、前記支持枠16の両面と一対の当接面21とが重なるように位置合わせし、集合振動基板42を一対の集合封止基板43,44で挟み込むようにして積層し、導電層30を介して溶接接合する。なお、前記導電層30は、図5及び図6に示したように、一対の内部電極によってパターン形成されるが、ここではそれぞれの内部電極の形状を省略して示す。   FIG. 9 shows a manufacturing process in a reduced pressure environment with a degree of vacuum of 1.0 × 10 Pa or less. Under such a reduced pressure environment, as shown in FIG. 9 (a), both the support frame 16 and the pair of contact surfaces 21 are aligned so that the collective vibration substrate 42 is paired with the collective sealing. The substrates 43 and 44 are stacked so as to be sandwiched between the substrates 43 and 44, and are joined by welding through the conductive layer 30. As shown in FIGS. 5 and 6, the conductive layer 30 is patterned by a pair of internal electrodes, but the shape of each internal electrode is omitted here.

次に、図9(b)に示すように、前記積層された前記集合振動基板42及び一対の集合封止基板43,44の共通する貫通孔45に対してスパッタリングを施すことによって、支持枠16及び当接面21に沿って形成されている導電層30の側面及び上面あるいは下面の一端と電気的に接続される一対の外部電極25a,25bを形成する。この外部電極25a,25bを形成することによって、水晶振動片15を気密状態で封止することができる。   Next, as shown in FIG. 9B, the support frame 16 is sputtered on the common through hole 45 of the stacked collective vibration substrate 42 and the pair of collective sealing substrates 43 and 44. Then, a pair of external electrodes 25a and 25b that are electrically connected to one end of the side surface and upper or lower surface of the conductive layer 30 formed along the contact surface 21 are formed. By forming the external electrodes 25a and 25b, the crystal vibrating piece 15 can be sealed in an airtight state.

最後に、前記集合振動基板42及び一対の集合封止基板43,44の積層体をダイシングライン46に沿ってダイシングすることで、図3に示した三層構造の水晶振動子11を一括して複数製造することができる。   Finally, by dicing the laminated body of the collective vibration substrate 42 and the pair of collective sealing substrates 43 and 44 along the dicing line 46, the crystal resonators 11 having the three-layer structure shown in FIG. Multiple manufacturing is possible.

次に、第2実施形態の水晶振動子51の実施形態を図10乃至図14に基づいて説明する。この実施形態は、振動体12に形成されている導電層30の少なくとも一箇所に、水晶振動片15が収容される凹部23を開放するスリット状の通気路22を形成したものである。図12及び図13に示したように、前記通気路22は、前記振動体12及び一対の封止体13,14の一対の対向する側面に設けられる外部電極25a,25bのうち一方の外部電極25aによって閉塞される。   Next, an embodiment of the crystal unit 51 of the second embodiment will be described with reference to FIGS. In this embodiment, a slit-like air passage 22 that opens the recess 23 in which the crystal vibrating piece 15 is accommodated is formed in at least one portion of the conductive layer 30 formed in the vibrating body 12. As shown in FIGS. 12 and 13, the air passage 22 is one of the external electrodes 25 a and 25 b provided on the pair of opposing side surfaces of the vibrating body 12 and the pair of sealing bodies 13 and 14. It is blocked by 25a.

次に、前記水晶振動子51における導電層30の構成例を図14に示す。この実施形態では、振動体12の表面側の支持枠16に形成される第1の内部電極32aの一部を貫くようにスリット状の通気路22が設けられる。この通気路22は、支持枠16の水晶面の一部に筋状パターンが形成されたマスクを施して第1の内部電極32aをスパッタリングすることによって形成することができる。また、前記支持枠16の表面に第1の内部電極32aを形成するための薄膜状の金属材料を一様に形成しておいて、後からその金属材料の一部をスリット状に除去することによって形成することもできる。なお、前記通気路22は、前記振動体12を一対の封止体13,14によって封止した際にその一部が解放可能な位置であれば、前記支持枠16に形成される第1の内部電極32a,第2の内部電極32bあるいは当接面21に形成される内部電極33a,33bのどの位置に設けてもよく、また、複数設けてもよい。   Next, a configuration example of the conductive layer 30 in the crystal resonator 51 is shown in FIG. In this embodiment, a slit-like air passage 22 is provided so as to penetrate a part of the first internal electrode 32 a formed on the support frame 16 on the surface side of the vibrating body 12. The ventilation path 22 can be formed by applying a mask having a streak pattern formed on a part of the crystal surface of the support frame 16 and sputtering the first internal electrode 32a. Further, a thin-film metal material for forming the first internal electrode 32a is uniformly formed on the surface of the support frame 16, and a part of the metal material is later removed in a slit shape. Can also be formed. The air passage 22 is a first frame formed in the support frame 16 as long as a part of the air passage 22 is releasable when the vibrating body 12 is sealed by a pair of sealing bodies 13 and 14. You may provide in any position of the internal electrode 32a, the 2nd internal electrode 32b, or the internal electrodes 33a and 33b formed in the contact surface 21, and you may provide more than one.

前記通気路22を設けることで、振動体12と一対の封止体13,14とを接合した際に、水晶振動片15が封止されている凹部23から外部に通じる空気の通り道を確保することができ、これによって、前記凹部23内を減圧させることができる。この減圧の下、図12に示したように、前記通気路22を外側から塞ぐようにして、一対の外部電極25a,25bを形成することで、前記水晶振動片15を高減圧環境の下で封止することが可能となる。   By providing the air passage 22, when the vibrating body 12 and the pair of sealing bodies 13 and 14 are joined, an air passage leading to the outside from the concave portion 23 where the crystal vibrating piece 15 is sealed is secured. Thus, the inside of the recess 23 can be depressurized. Under this reduced pressure, as shown in FIG. 12, the pair of external electrodes 25a and 25b are formed so as to block the air passage 22 from the outside, so that the quartz crystal vibrating piece 15 can be placed under a highly reduced pressure environment. It becomes possible to seal.

前記通気路22を塞ぐ外部電極25a,25bは、前述したようにスパッタリングによって形成されるため、その金属成分の一部が通気路22内に入り込んで電気的及び機械的な接合をより一層高めることができる。   Since the external electrodes 25a and 25b that block the air passage 22 are formed by sputtering as described above, a part of the metal components enter the air passage 22 to further enhance electrical and mechanical joining. Can do.

本実施形態では、前記通気路22を支持枠16の表面及び裏面のいずれか一方に設けたが、両方に対向させるなどして複数形成することができる。また、図15に示すように、前記通気路22を外部電極25a,25bが形成されていない長辺側の接合面に設けてもよい。この場合は、減圧を行う際に、別の金属膜や樹脂膜等の封止体材26によって、通気路22を塞ぐようにする必要がある。   In this embodiment, although the said ventilation path 22 was provided in either one of the surface of the support frame 16, and the back surface, it can form in multiple numbers, such as making it oppose both. Further, as shown in FIG. 15, the air passage 22 may be provided on the long side joining surface where the external electrodes 25a and 25b are not formed. In this case, when the pressure is reduced, it is necessary to block the air passage 22 with a sealing material 26 such as another metal film or a resin film.

この第2実施形態の水晶振動子51によれば、通気路22を振動体12と一対の封止体13,14との電気的接続を図る導電層30に形成するため、外部電極25a,25bの形成工程と同時に前記通気路22を封止することができる。これによって、気密封止をより確実に行うことができると共に、水晶振動片15に形成されている一対の励振電極との電気的特性を良好に維持することができる。   According to the crystal resonator 51 of the second embodiment, since the air passage 22 is formed in the conductive layer 30 for electrical connection between the vibrating body 12 and the pair of sealing bodies 13 and 14, the external electrodes 25a and 25b The ventilation path 22 can be sealed simultaneously with the forming step. As a result, hermetic sealing can be performed more reliably, and electrical characteristics with the pair of excitation electrodes formed on the crystal vibrating piece 15 can be maintained well.

また、前記導電層30の一部に通気路22を設けたことで、前記振動体12及び一対の封止体13,14に孔開け等の加工を加えることなく、減圧環境の下で容易且つ確実に気密封止を行うことができる。これによって、水晶振動片15を気密封止する際に、前記振動体12及び一対の封止体13,14に亀裂やクラック等が生じることがないので、所定の振動特性を備えた薄型の水晶振動子を安定的に量産することができる。   Further, by providing the air passage 22 in a part of the conductive layer 30, the vibrator 12 and the pair of sealing bodies 13 and 14 can be easily and under a reduced pressure environment without adding processing such as drilling. Airtight sealing can be performed reliably. Thus, when the crystal vibrating piece 15 is hermetically sealed, no cracks or cracks are generated in the vibrating body 12 and the pair of sealing bodies 13 and 14, so that a thin crystal having predetermined vibration characteristics is provided. The vibrator can be mass-produced stably.

図16は様々な形状の支持枠62,72を有する振動体61,71の形成例を示したものである。この振動体61,71は、支持枠62,72がそれぞれ四角形状の外周部63,73と、水晶振動片15を囲う内周部64,74とを有し、前記内周部64,74を曲面形成することによって、前記水晶振動片15を封入するスペース65,75を規制するものである。図16(a)は水晶振動片15の上端側及び下端側のスペースに余裕を持たせる一方、水晶振動片15の中央側のスペース65をすぼめたひょうたん形に形成したものであり、図16(b)は水晶振動片15の中央部との間隔に余裕を持たせ、水晶振動片15の上端側及び下端側に向けて間隔を狭くした卵形に形成したものである。なお、前記振動体61,71を挟持する一対の封止体の封止枠に対しても、同様な対応する曲面形状に形成される。   FIG. 16 shows examples of forming the vibrating bodies 61 and 71 having the support frames 62 and 72 having various shapes. The vibrating bodies 61, 71 have outer peripheral parts 63, 73 whose support frames 62, 72 are rectangular, and inner peripheral parts 64, 74 surrounding the crystal vibrating piece 15, respectively. By forming a curved surface, the spaces 65 and 75 that enclose the quartz crystal vibrating piece 15 are regulated. FIG. 16A is a gourd shape in which the space on the upper end side and the lower end side of the crystal vibrating piece 15 is provided with a margin, while the space 65 on the center side of the crystal vibrating piece 15 is reduced. b) is formed in an oval shape having a sufficient space with respect to the center portion of the quartz crystal vibrating piece 15 and narrowing the gap toward the upper end side and the lower end side of the quartz crystal vibrating piece 15. A similar corresponding curved surface shape is also formed on the sealing frame of the pair of sealing bodies that sandwich the vibrating bodies 61 and 71.

上記図16(a),(b)に示した実施形態では、いずれも支持枠62,72の内周部64,74によって、水晶振動片15を囲うスペース65,75を図1乃至図15に示した振動体12に比べて狭くすることができる。これによって、特に、支持枠62,72の四隅の面積が広く確保することができるので、水晶振動子が受ける外部からの衝撃に対する変形や破壊を有効に防止することができ、安定した振動モードを維持することができる。また、前記支持枠と重なる一対の封止枠との密接面が広がることで、接合強度が増し、気密封止をより確実に行うことができる。   In the embodiment shown in FIGS. 16A and 16B, the spaces 65 and 75 surrounding the crystal vibrating piece 15 by the inner peripheral portions 64 and 74 of the support frames 62 and 72 are shown in FIGS. It can be made narrower than the vibrating body 12 shown. In particular, since the areas of the four corners of the support frames 62 and 72 can be secured widely, it is possible to effectively prevent deformation and destruction due to external impact received by the crystal resonator, and a stable vibration mode can be obtained. Can be maintained. Further, since the contact surface between the pair of sealing frames that overlap with the support frame is widened, the bonding strength is increased and the hermetic sealing can be more reliably performed.

11 水晶振動子
12 振動体
13,14 封止体
13a,14a 側面
15 水晶振動片
16 支持枠
16a,16b 側面
17 連結部
18 基部
19 振動腕部
21 当接面
22 通気路
23 凹部
25a,25b 外部電極
26 封止部材
30 導電層
30a 側面
30b 上面
30c 下面
31a,31b 励振電極
32a,33a 第1の内部電極
32b,33b 第2の内部電極
34 絶縁部
42 集合振動基板
43,44 集合封止基板
45 貫通孔
46 ダイシングライン
51 水晶振動子
61,71 振動体
62,72 支持枠
63,73 外周部
64,74 内周部
65,75 スペース
DESCRIPTION OF SYMBOLS 11 Crystal oscillator 12 Vibrating body 13,14 Sealing body 13a, 14a Side surface 15 Crystal vibrating piece 16 Support frame 16a, 16b Side surface 17 Connection part 18 Base part 19 Vibrating arm part 21 Contact surface 22 Ventilation path 23 Recessed part 25a, 25b External Electrode 26 Sealing member 30 Conductive layer 30a Side surface 30b Upper surface 30c Lower surface 31a, 31b Excitation electrode 32a, 33a First internal electrode 32b, 33b Second internal electrode 34 Insulating part 42 Collective vibration substrate 43, 44 Collective sealing substrate 45 Through hole 46 Dicing line 51 Quartz crystal oscillator 61, 71 Vibrating body 62, 72 Support frame 63, 73 Outer peripheral part 64, 74 Inner peripheral part 65, 75 Space

Claims (9)

水晶振動片とこの水晶振動片の少なくとも一端を支持する支持枠とからなる振動体と、
前記支持枠の上下面にそれぞれ接合される当接面及び内側に凹部を有する一対の封止体とを有し、前記支持枠の上下面にそれぞれに形成される導電層を介して前記一対の封止体の当接面が接合され、接合された前記振動体及び一対の封止体の側面に露出する前記導電層の側面を覆うようにして外部電極が被覆形成される水晶振動子であって、
前記導電層の側面から上面及び下面の一端を露出するようにして前記一対の封止体の当接面を接合し、この導電層の側面から上面及び下面の一端を被覆するようにして前記外部電極が形成されることを特徴とする水晶振動子。
A vibrating body comprising a quartz crystal vibrating piece and a support frame that supports at least one end of the quartz crystal vibrating piece;
A pair of sealing bodies each having a contact surface joined to the upper and lower surfaces of the support frame and a concave portion on the inner side, and the pair of sealing members formed on the upper and lower surfaces of the support frame via conductive layers formed respectively. A crystal resonator in which an abutting surface of a sealing body is bonded and an external electrode is formed so as to cover a side surface of the conductive layer exposed to the side surfaces of the bonded vibrating body and a pair of sealing bodies. And
The contact surfaces of the pair of sealing bodies are joined so that one end of the upper surface and the lower surface is exposed from the side surface of the conductive layer, and the one end of the upper surface and the lower surface is covered from the side surface of the conductive layer. A crystal resonator in which an electrode is formed.
前記一対の封止体の当接面が前記支持枠の上下面に形成される導電層より内側に当接して接合される請求項1に記載の水晶振動子。   2. The crystal resonator according to claim 1, wherein the contact surfaces of the pair of sealing bodies are bonded in contact with the inner side of the conductive layer formed on the upper and lower surfaces of the support frame. 前記導電層は、前記水晶振動片に設けられる一対の励振電極と、この一対の励振電極に対応する前記一対の外部電極とをそれぞれ電気的に接続する一対の内部電極によって形成され、この一対の内部電極が、振動体の支持枠の上下面と、この上下面と対向する一対の封止体の当接面とに絶縁部を介して形成されている請求項1に記載の水晶振動子。   The conductive layer is formed by a pair of excitation electrodes provided on the quartz crystal vibrating piece and a pair of internal electrodes that electrically connect the pair of external electrodes corresponding to the pair of excitation electrodes, respectively. 2. The crystal resonator according to claim 1, wherein the internal electrode is formed on an upper surface and a lower surface of the support frame of the vibrating body and a contact surface of the pair of sealing bodies facing the upper and lower surfaces via an insulating portion. 前記支持枠の上下面と、この上下面と対向する一対の封止体の当接面との形成される前記一対の内部電極は、いずれか一方が前記水晶振動片の対応する励振電極に電気的に接続される請求項3に記載の水晶振動子。   One of the pair of internal electrodes formed by the upper and lower surfaces of the support frame and the contact surfaces of the pair of sealing bodies facing the upper and lower surfaces is electrically connected to the excitation electrode corresponding to the quartz crystal vibrating piece. 4. The crystal resonator according to claim 3, wherein the crystal resonator is connected to each other. 前記導電層には前記封止体の凹部と外部とを連通する通気路が少なくとも一箇所に設けられると共に、前記振動体及び封止体の一側面において前記通気路の一端部が前記外部電極によって閉塞される請求項1に記載の水晶振動子。   The conductive layer is provided with at least one air passage that communicates the concave portion of the sealing body with the outside, and one end portion of the air passage on one side surface of the vibrating body and the sealing body is formed by the external electrode. The crystal resonator according to claim 1, which is closed. 前記導電層は、前記支持枠の全周面及びこの支持枠の両面にそれぞれ接合される前記一対の封止体の当接面の少なくとも一方の全周面に設けられ、前記導電層に設けられた通気路が導電層に形成されるスリットからなる請求項5に記載の水晶振動子。   The conductive layer is provided on the entire circumferential surface of the support frame and on the entire circumferential surface of at least one of the contact surfaces of the pair of sealing bodies respectively bonded to both surfaces of the support frame. The crystal unit according to claim 5, wherein the air passage is formed by a slit formed in the conductive layer. 水晶振動片及びこの水晶振動片の少なくとも一端を支持する支持枠からなる振動体を集合振動基板に複数形成する工程と、
前記支持枠の上下面にそれぞれ接合される当接面と内側に凹部とを有する封止体を一対の集合封止基板に複数形成する工程と、
前記集合振動基板に形成された各振動体の対向する一対の側面及び前記一対の集合封止基板に形成された各封止体の対向する一対の側面に沿ってそれぞれ貫通孔を設ける工程と、
前記集合振動基板の上下面に前記一対の集合封止基板を位置合わせし、前記集合振動基板に形成された各振動体の支持枠と前記一対の集合封止基板に形成された各封止体の当接面とを導電層を介して接合する工程と、
前記貫通孔の内壁面に沿って、前記集合振動基板に形成された各振動体の対向する一対の側面及び前記一対の集合封止基板に形成された各封止体の対向する一対の側面に外部電極を形成する工程と、
前記接合された集合振動基板及び集合封止基板を所定方向にダイシングして個々の水晶振動子に分割する工程と、
を備えることを特徴とする水晶振動子の製造方法。
Forming a plurality of vibrators comprising a quartz crystal vibrating piece and a support frame supporting at least one end of the quartz crystal vibrating piece on the collective vibrating substrate;
Forming a plurality of sealing bodies each having a contact surface to be bonded to the upper and lower surfaces of the support frame and a concave portion on the inside thereof on a pair of collective sealing substrates;
Providing a through hole along a pair of opposing side surfaces of each vibrating body formed on the collective vibration substrate and a pair of opposing side surfaces of each sealing body formed on the pair of collective sealing substrates;
The pair of collective sealing substrates are aligned with the upper and lower surfaces of the collective vibration substrate, and a support frame of each vibrator formed on the collective vibration substrate and each sealing body formed on the pair of collective sealing substrates A step of joining the contact surface of the two through a conductive layer;
Along the inner wall surface of the through hole, a pair of opposing side surfaces of each vibrating body formed on the collective vibration substrate and a pair of opposing side surfaces of each sealing body formed on the pair of collective sealing substrates Forming an external electrode;
Dicing the joined collective vibration substrate and collective sealing substrate in a predetermined direction and dividing them into individual crystal resonators;
A method for manufacturing a crystal resonator, comprising:
前記集合振動基板に形成された各振動体の支持枠と前記一対の集合封止基板に形成された各封止体の当接面とが、前記導電層の上面及び下面の一端を露出するようにして接合される請求項7に記載の水晶振動子の製造方法。   A support frame of each vibrating body formed on the collective vibration substrate and a contact surface of each sealing body formed on the pair of collective sealing substrates so that one end of the upper surface and the lower surface of the conductive layer is exposed. The method for manufacturing a crystal resonator according to claim 7, wherein the crystal resonator is bonded as described above. 前記集合振動基板に形成された各振動体の支持枠と前記一対の集合封止基板に形成された各封止体の当接面とを少なくとも一箇所に通気路を有する導電層によって接合する工程と、
前記貫通孔の内壁面に沿って、前記集合振動基板に形成された各振動体の対向する一対の側面及び前記一対の集合封止基板に形成された各封止体の対向する一対の側面に外部電極を形成し、該一対の外部電極の少なくとも一方の外部電極によって前記導電層に設けられた通気路の一端部を閉塞する工程とを備える請求項7に記載の水晶振動子の製造方法。
The step of joining the support frame of each vibrating body formed on the collective vibration substrate and the contact surface of each sealing body formed on the pair of collective sealing substrates with a conductive layer having an air passage in at least one place When,
Along the inner wall surface of the through hole, a pair of opposing side surfaces of each vibrating body formed on the collective vibration substrate and a pair of opposing side surfaces of each sealing body formed on the pair of collective sealing substrates The method for manufacturing a crystal resonator according to claim 7, further comprising: forming an external electrode, and closing one end portion of the air passage provided in the conductive layer with at least one external electrode of the pair of external electrodes.
JP2015181380A 2015-09-15 2015-09-15 Crystal oscillator Active JP6744078B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015181380A JP6744078B2 (en) 2015-09-15 2015-09-15 Crystal oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015181380A JP6744078B2 (en) 2015-09-15 2015-09-15 Crystal oscillator

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2019151012A Division JP6762049B2 (en) 2019-08-21 2019-08-21 Crystal oscillator
JP2019151016A Division JP6762050B2 (en) 2019-08-21 2019-08-21 Manufacturing method of crystal unit

Publications (2)

Publication Number Publication Date
JP2017059918A true JP2017059918A (en) 2017-03-23
JP6744078B2 JP6744078B2 (en) 2020-08-19

Family

ID=58390496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015181380A Active JP6744078B2 (en) 2015-09-15 2015-09-15 Crystal oscillator

Country Status (1)

Country Link
JP (1) JP6744078B2 (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5484991A (en) * 1977-11-21 1979-07-06 Seiko Epson Corp Crystal vibrator
JPS58172008A (en) * 1982-04-02 1983-10-08 Toyo Commun Equip Co Ltd Structure and manufacture of piezoelectric oscillator
JPS60129717U (en) * 1984-02-08 1985-08-30 日本電波工業株式会社 piezoelectric vibrator
JP2000223997A (en) * 1999-01-29 2000-08-11 Seiko Instruments Inc Electrode structure for piezoelectric vibrator
JP2001060843A (en) * 1999-08-23 2001-03-06 Murata Mfg Co Ltd Chip type piezoelectric part
JP2011146514A (en) * 2010-01-14 2011-07-28 Renesas Electronics Corp Metal seal material, semiconductor device, and manufacturing method thereof
JP2012142875A (en) * 2011-01-06 2012-07-26 Nippon Dempa Kogyo Co Ltd Piezoelectric device and method of manufacturing the same
JP2013172244A (en) * 2012-02-20 2013-09-02 Nippon Dempa Kogyo Co Ltd Method of manufacturing piezoelectric device and piezoelectric device
JP2013236175A (en) * 2012-05-07 2013-11-21 Daishinku Corp Piezoelectric vibration device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5484991A (en) * 1977-11-21 1979-07-06 Seiko Epson Corp Crystal vibrator
JPS58172008A (en) * 1982-04-02 1983-10-08 Toyo Commun Equip Co Ltd Structure and manufacture of piezoelectric oscillator
JPS60129717U (en) * 1984-02-08 1985-08-30 日本電波工業株式会社 piezoelectric vibrator
JP2000223997A (en) * 1999-01-29 2000-08-11 Seiko Instruments Inc Electrode structure for piezoelectric vibrator
JP2001060843A (en) * 1999-08-23 2001-03-06 Murata Mfg Co Ltd Chip type piezoelectric part
JP2011146514A (en) * 2010-01-14 2011-07-28 Renesas Electronics Corp Metal seal material, semiconductor device, and manufacturing method thereof
JP2012142875A (en) * 2011-01-06 2012-07-26 Nippon Dempa Kogyo Co Ltd Piezoelectric device and method of manufacturing the same
JP2013172244A (en) * 2012-02-20 2013-09-02 Nippon Dempa Kogyo Co Ltd Method of manufacturing piezoelectric device and piezoelectric device
JP2013236175A (en) * 2012-05-07 2013-11-21 Daishinku Corp Piezoelectric vibration device

Also Published As

Publication number Publication date
JP6744078B2 (en) 2020-08-19

Similar Documents

Publication Publication Date Title
TWI649963B (en) Crystal vibration element
JP6017189B2 (en) Piezoelectric vibrating piece and piezoelectric device
JP6885338B2 (en) Piezoelectric vibration device
JPWO2016194562A1 (en) Piezoelectric vibrator and manufacturing method thereof
TW201308891A (en) Piezoelectric device and method for manufacturing the same
US11824512B2 (en) Piezoelectric resonator device
JP2017153033A (en) Crystal diaphragm, and crystal vibration device
WO2021059731A1 (en) Piezoelectric vibration plate, piezoelectric vibration device, and method for manufacturing piezoelectric vibration device
TW201904193A (en) Tuning fork type piezoelectric vibrating piece and tuning fork type piezoelectric vibrator using the tuning fork type piezoelectric vibrating piece
TW201345008A (en) Piezoelectric device and method for fabricating the same
JP6762050B2 (en) Manufacturing method of crystal unit
JP6762049B2 (en) Crystal oscillator
JP4555068B2 (en) Method for manufacturing crystal resonator package
JP6744078B2 (en) Crystal oscillator
CN107615652B (en) Substrate for mounting piezoelectric vibration element, piezoelectric vibrator, and method for manufacturing piezoelectric vibrator
JP7196726B2 (en) crystal wafer
JP2019068304A (en) Piezoelectric vibration device
JP5188948B2 (en) Crystal oscillator
JP5369889B2 (en) Vibration device
JP5188836B2 (en) Manufacturing method of crystal unit
TWI817286B (en) Piezoelectric vibration device
JP2015139012A (en) Quartz crystal resonator and manufacturing method thereof
CN109842392B (en) Piezoelectric vibration device and manufacturing method of piezoelectric vibration device
CN109845103B (en) Piezoelectric vibrator
JP4833716B2 (en) Piezoelectric oscillator

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180902

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190423

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190417

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190612

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190821

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200114

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200221

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200714

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200730

R150 Certificate of patent or registration of utility model

Ref document number: 6744078

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250