JP2017011126A - Substrate processing apparatus, substrate processing method, and storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To detect abnormality in a state of a substrate on a mounting part in a substrate processing apparatus with high accuracy.SOLUTION: The substrate processing apparatus comprising a substrate conveyance mechanism for conveying a substrate includes: a mounting part in which the substrate is mounted; a plurality of ultrasonic sensors which are provided in the mounting part for irradiating mutually different locations on the substrate with ultrasonic waves and acquiring transition data of a separation distance from the relevant location; and a discrimination part for discriminating whether the state of the substrate on the mounting part is normal based on the transition data of the separation distance. Thus, a position of the substrate moving on the mounting part can be accurately monitored, thereby detecting the abnormality in the state of the substrate on the mounting part with high accuracy.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a substrate processing apparatus, a substrate processing method, and a storage medium provided with a substrate placement unit and a substrate transport mechanism.

  In a semiconductor device manufacturing process, a semiconductor wafer (hereinafter referred to as a wafer), which is a substrate, is transferred between a plurality of modules provided in the substrate processing apparatus by a substrate transport mechanism. Get processed. Each of the modules includes a placement unit for placing the wafer in order to perform processing on the wafer. If the wafer is not normally delivered to the mounting portion, there may be a problem in processing the wafer. Specifically, for example, when the mounting portion is a hot plate that heats the wafer, the temperature variation in the wafer surface becomes large.

  In view of this, it has been studied to configure the substrate processing apparatus so as to detect the wafer mounting state in the mounting section and to increase the product yield. For example, Patent Document 1 shows a heating module in which an electrostatic sensor is provided on the mounting portion, and Patent Document 2 shows an exposure apparatus in which a photoelectric sensor is provided on the mounting portion. In these heating modules and exposure apparatuses, it is assumed that whether or not the wafer is misaligned with respect to the respective placement units is detected by electrostatic sensors and photoelectric sensors.

JP 2006-351751 A JP 2006-332519 A

  By the way, when performing detection by an electrostatic sensor as in Patent Document 1, there is a possibility that the distance cannot be measured accurately if the wafer is charged. Therefore, it may be required to detect the mounting state of the wafer mounting portion without using the electrostatic sensor. Further, as described in the item of the embodiment of the present invention, even if the wafer is not displaced with respect to the placement unit, the wafer may not be normally placed on the placement unit due to tilting or warping. When the wafer is tilted in such a manner, the light irradiated to the wafer from the photoelectric sensor of Patent Document 2 is reflected in a direction different from the originally reflected direction, and the detection accuracy of the wafer position is sufficiently increased. There is a risk that it will not be possible.

  Further, for example, when the mounting unit is a hot plate as described above, the wafer is quickly processed when it is mounted on the mounting unit. Therefore, in addition to detecting the state of the wafer placed on the placement unit, the state of the wafer located in the upper region of the placement unit before being placed on the placement unit is detected, and the abnormal state of the wafer is detected. It is also required to prevent placement.

  Further, the substrate transport mechanism includes a holding body that holds the placed wafer. If the wafer is not normally placed on the holder, which is the placement unit, the wafer may not be normally placed on the module placement unit, or the wafer may fall from the holder onto the floor. Therefore, it is required to accurately detect the wafer mounting state on the holding body as well as the wafer mounting state on the module mounting portion.

  The present invention has been made in such circumstances, and an object of the present invention is to provide a technique capable of accurately detecting an abnormality in the state of the substrate on the mounting portion in the substrate processing apparatus.

In the substrate processing apparatus provided with the substrate transport mechanism for transporting the substrate of the present invention,
A placement section on which the substrate is placed;
A plurality of ultrasonic sensors for obtaining the transition data of the separation distance from each of the substrates by irradiating ultrasonic waves to different portions of the substrate, respectively,
A determination unit that determines whether or not the state of the substrate on the placement unit is normal based on the transition data of the separation distance;
It is characterized by providing.

The substrate processing method of the present invention is a substrate processing apparatus provided with a substrate transfer mechanism for transferring a substrate.
Placing the substrate on a placement portion of the substrate;
A step of continuously irradiating ultrasonic waves to different locations of the substrate by a plurality of ultrasonic sensors provided in the mounting portion, and obtaining transition data of a separation distance from the locations,
A step of determining whether or not the state of the substrate on the placement unit is normal based on the transition data of the separation distance;
It is characterized by providing.
The storage medium of the present invention is a storage medium storing a computer program used in a substrate processing apparatus provided with a substrate transfer mechanism for transferring a substrate,
The program includes steps for executing the substrate processing method of the present invention.

  According to the present invention, there are provided a plurality of ultrasonic sensors for acquiring transition data of the separation distance from the substrate, and based on the transition data, whether or not the state of the substrate in the substrate mounting portion is normal. Is determined. Since each ultrasonic sensor can monitor the position of the substrate moving on the placement unit with high accuracy, an abnormality in the state of the substrate on the placement unit can be detected with high accuracy.

It is a vertical side view of the heating module provided in the coating and developing apparatus according to the substrate processing apparatus of the present invention. It is a cross-sectional top view of the said heating module. It is a side view which shows the state of the wafer mounted in the said heating module. It is a side view which shows the state of the wafer mounted in the said heating module. It is a side view which shows the state of the wafer mounted in the said heating module. It is a timing chart of the separation distance of the wafer and the sensor acquired by the ultrasonic sensor of the heating module. It is a side view which shows the state of the wafer mounted in the said heating module. It is a side view which shows the state of the wafer mounted in the said heating module. It is a top view which shows the state of the wafer mounted in the said heating module. It is a timing chart of the said separation distance. It is a side view which shows the state of the wafer mounted in the said heating module. It is a side view which shows the state of the wafer mounted in the said heating module. It is a top view which shows the state of the wafer mounted in the said heating module. It is a timing chart of the said separation distance. It is a top view which shows the state of the wafer mounted in the said heating module. It is a timing chart of the said separation distance. It is explanatory drawing which shows a mode that the position of a wafer is correct | amended by the holding body. It is a top view which shows the state of the wafer mounted in the said heating module. It is a side view which shows the state of the wafer mounted in the said heating module. It is a timing chart of the said separation distance. It is a flowchart of the delivery with respect to the said heating module by the said holding body. It is a flowchart which shows the coping operation | movement in the said delivery flow. It is a side view which shows the other structure of the said ultrasonic sensor. It is a top view which shows the other structure of the hot platen of the said heating module. It is a side view which shows the state of the wafer mounted in the said heating module. It is a timing chart of the said separation distance. It is a side view which shows the state of the wafer mounted in the said heating module. It is a timing chart of the said separation distance. It is a vertical side view of the heating module of another structure. It is a cross-sectional top view of the said heating module. It is a flowchart of the delivery with respect to the said heating module by the said holding body. It is a flowchart of the delivery with respect to the said heating module by the said holding body. It is a side view which shows the cooling plate provided in the said heating module. It is a side view which shows the cooling plate provided in the said heating module. It is a side view which shows the cooling plate provided in the said heating module. It is a top view which shows the other structural example of the said holding body. It is a vertical side view of the said holding body. It is a top view which shows the other structural example of the said holding body. It is a vertical side view of the said holding body. It is a timing chart of the separation distance of the wafer and the sensor acquired by the ultrasonic sensor of the holder. It is a cross-sectional top view of the said coating and developing apparatus. It is a perspective view of the coating and developing apparatus. It is a schematic longitudinal side view of the coating and developing apparatus.

(First embodiment)
A coating and developing apparatus as an embodiment of the substrate processing apparatus of the present invention will be described. The coating and developing apparatus includes a heating module 1 that heats a wafer W that is a circular substrate, and a substrate transport mechanism that transports the wafer W to the heating module 1. The substrate transport mechanism includes a holding body 21 that holds the peripheral edge of the back surface of the wafer W. For example, the wafer W is transported to the heating module 1 by the holding body 21 in a state where a resist film is formed on the surface thereof, and is heated by the heating module 1, whereby the solvent remaining in the resist film is removed.

  FIG. 1 shows a longitudinal side surface of the heating module 1, and FIG. 2 shows a transverse plane of the heating module 1 and a plane of the holding body 21. The holding body 21 is formed in a horizontal plate shape that is generally C-shaped in plan view, and is configured to be movable forward and backward, left and right with respect to the heating module 1 and rotatable about a vertical axis. The heating module 1 includes a horizontal circular hot plate 12 that forms a mounting portion for the wafer W. In FIG. 1, reference numeral 13 denotes a heater for heating the hot platen 12. A plurality of support pins 14 are provided in a distributed manner on the surface of the hot plate 12. When the wafer W is normally delivered to the hot plate 12, the wafer W is supported horizontally on these support pins 14. Then, it is heated while slightly floating from the hot plate 12. The height of the support pin 14 is, for example, 0.1 mm.

  A plurality of position restricting pins 15 are provided on the surface of the hot plate 12 at intervals along the peripheral edge of the hot plate 12, and an area surrounded by the position restricting pins 15 is a place where the wafer W is placed. It is configured as a region R1. The position regulating pins 15 regulate the position of the wafer W so that the wafer W is placed on the placement region R1 when the wafer W is placed on the placement region R1. Further, the heat plate 12 is provided with a through hole in the thickness direction, and three elevating pins 16 (only two are shown in FIG. 1) are moved up and down in the through hole and protruded and submerged on the heat plate 12. ) Is provided. Reference numeral 17 in FIG. 1 denotes a pin lifting mechanism that lifts the lifting pins 16.

  The hot plate 12 is provided with four holes at intervals along the peripheral edge of the mounting area, and the ultrasonic sensors 2A to 2D are embedded in the holes, respectively. The ultrasonic sensor 2 (2A to 2D) is a reflection type sensor, and irradiates ultrasonic waves vertically upward. When the wafer 21 is positioned above the ultrasonic sensors 2 </ b> A to 2 </ b> D by the holding body 21, the ultrasonic wave applied to the wafer W is reflected, and the ultrasonic sensors 2 </ b> A to 2 </ b> D receive this reflected wave. . And each ultrasonic sensor 2A-2D transmits the detection signal based on this reflected wave to the control part 3 which makes the below-mentioned determination part via the amplifier 22 provided for every ultrasonic sensor 2A-2D.

  The detection signal transmitted to the control unit 3 includes information about the distance between each ultrasonic sensor 2 and the wafer W above it, and the control unit 3 detects each ultrasonic sensor based on the detection signal. The distance between 2A to 2D and the wafer W is detected. With such a configuration, for example, the wafer W at a position 0 mm to 30 mm away from the ultrasonic sensors 2A to 2D can be detected.

  Since the ultrasonic sensors 2A to 2D are arranged as described above, when the wafer W is positioned at or above the placement region R1, the ultrasonic sensors 2A to 2D and the ultrasonic sensors 2A to 2D are arranged. The separation distance from the wafer W on 2D is detected. For example, while the heating module 1 is in operation, ultrasonic waves are always output from the ultrasonic sensors 2A to 2D, and the separation distance between the sensors 2A to 2B and the wafer W is monitored. The monitoring of the separation distance here includes monitoring of the presence or absence of the wafer W on the ultrasonic sensors 2A to 2D.

2, the center of the hot plate 12, that is, the center point of the mounting region R1 of the wafer W is indicated by P. When the wafer W is normally placed on the hot plate 12, the center point P and the wafer The center of W coincides. In the following description, as shown in FIG. 2, when viewed from the holding body 21 toward the heat plate 12, the front and rear are defined as + X direction and −X direction, respectively, the left and right directions are + Y direction and −Y, respectively. Sometimes described as a direction. In addition, a direction inclined 45 ° with respect to the + X direction and the + Y direction is described as a + J direction, a direction inclined 45 ° with respect to the + X direction and the −Y direction is described as a + K direction, and is opposite to the + J direction and the + K direction, respectively. The direction may be described as -J direction and -K direction. The ultrasonic sensors 2A to 2D are arranged in a matrix, and 2A, 2B, 2C, and 2D are located at positions away from the center point P in the -K, + J, -J, and + K directions, respectively. Is provided.
ing.

  In FIG. 1, reference numeral 23 denotes a shutter that can be moved up and down, and is configured in an upright cylindrical shape surrounding the heat plate 12. In the figure, reference numeral 24 denotes a circular top plate, which is provided above the hot platen 12. An exhaust port 25 is opened at the center of the lower surface of the top plate 24. When the wafer W is placed on the hot plate 12 and subjected to heat treatment, a slight gap is formed between the upper end of the shutter 23 and the peripheral edge of the top plate 24 as shown in FIG. The exhaust port 25 exhausts air. As a result, the wafer W flows from the outside of the hot plate 12 onto the hot plate 12 and is exposed to an air current exhausted by the exhaust port 25 to heat the wafer W. In FIG. 1, this air flow is indicated by an arrow. When the holding body 21 delivers the wafer W to the hot platen 12, the shutter 23 is lowered from the position shown in FIG. 1 so as not to prevent the movement of the holding body 21.

  Next, the control unit 3 will be described. The control unit 3 is composed of a computer, for example, and has a program storage unit (not shown). In the program storage unit, control of operations of each unit of the heating module 1, control of movement of the holding body 21 for delivering the wafer W, and ultrasonic sensors 2A to 2D based on detection signals from the ultrasonic sensors 2A to 2D. Commands (step group) so that various operations described later can be performed, such as detection of the separation distance between 2D and wafer W, creation of data of change over time of separation distance described later, and various determinations based on the data of change over time. Stores a program in which Then, according to the program, control signals are output from the control unit 3 to each part of the coating and developing apparatus including the transport mechanism and the heating module 1, whereby each operation described later is performed. This program is stored in the program storage unit while being stored in a storage medium such as a hard disk, a compact disk, a magnetic optical disk, or a memory card.

In addition, the control unit 3 includes a memory. When processing is performed on the wafer W according to a flow to be described later, the ID of the wafer W and information about whether or not the wafer W has been normally heat-processed are associated with each other and stored in this memory. When an abnormal process is performed, information on whether the process is abnormal due to the presence of foreign matter on the hot plate 21 or the process abnormal due to riding on the position regulation pin 15 is also stored as will be described later.
Further, when it is determined in the flow described later that there is an abnormality in each of the sensor 2, the lifting pins 16, and the heating module 1, that fact is also stored. Further, the control unit 3 includes an alarm generator. This alarm generator is, for example, a monitor or a speaker, and when it is determined that an abnormal process has been performed on the wafer W, or when it is determined that there is an abnormality with respect to the sensor 2, the lift pins 16, and the heating module 1, respectively. A predetermined screen display and sound output are performed to notify the user of the occurrence of an abnormality.

  Next, the state of the wafer W when it is normally transferred onto the hot platen 12 will be described with reference to FIGS. Further, at this time, based on the detection signals from the ultrasonic sensors 2A to 2D, the temporal change data of the separation distance between the ultrasonic sensors 2A to 2D and the wafer W acquired by the control unit 3 is shown in FIG. It is shown as a timing chart, and changes on this chart will also be described. The timing chart will be supplementarily described. In the chart, for each of the sensors 2A to 2D, depending on the size of the interval between the horizontal axis of the dotted line and the solid chart line (denoted as LA to LD), The separation distance between the wafer W and the sensor 2 is shown.

  More specifically, the chart line fluctuates up and down in accordance with the detection signal from the sensor 2, and as the distance between the horizontal axis and the chart line increases, the position of the wafer W irradiated with the ultrasonic wave and the ultrasonic wave are changed. This indicates that the distance from the irradiated sensor 2 is large. Further, in this chart, when the wafer W is not on the sensor 2 and the sensor 2 cannot detect the wafer W, LA to LD are larger than when the sensor 2 detects the wafer W. . When the wafer W is on the sensor 2 as described above, the LA to LD in the chart correspond to the separation distance between the wafer W and the sensor 2, so that the LA to LD are the separation distance. May explain.

  First, the holding body 21 holding the wafer W moves forward (+ X direction) from the outside of the hot plate 12 (FIG. 3), and the wafer W is positioned on the sensors 2A to 2D. Times t <b> 1 and t <b> 2 in the chart indicate times when the wafer W changes from a state in which the wafer W cannot be detected to a state in which it can be detected due to the advancement of the holding body 21. Thereafter, the elevating pins 16 are raised (time t3), and the wafer W is supported horizontally by the elevating pins 16 and floats up from the holding body 21, and then the holding body 21 moves rearward (−X direction), and the hot plate 12 Evacuate from above. During the retraction, the wafer W is stationary at a certain height from the hot plate 12, and the separation distances LA to LD are constant. At this stationary time, the wafer W overlaps the placement region R1. Thereafter, the wafer W is lowered together with the raising / lowering pins 16 in a horizontal state (time t11 in the chart, FIG. 4), and the constant separation distances LA to LD start to decrease. When the wafer W is horizontally supported on the support pins 14 and is placed so as to overlap the placement region R1, the decrease in the separation distances LA to LD stops and the LA to LD become constant (time t12). The wafer W is heated by the heat of the hot plate 12 (FIG. 5).

  Thereafter, the raising / lowering pins 16 rise and the wafer W floats up from the support pins 14 in a horizontal state, and the separation distances LA to LD that have been in a constant state start to rise (time t21). Thereafter, the raising and lowering of the lifting pins 16 is stopped, and the raising of the separation distances LA to LD is stopped (time t22). Thereafter, the holding body 21 is moved downward by the advancement of the holding body 21, the wafer W is transferred to the holding body 21 by the lowering of the elevating pins 16, and the wafer W is moved backward on the hot plate 12. Evacuation from is performed in order.

  When the transfer of the wafer W to the hot plate 12 is normally performed as described above, the ultrasonic waves are generated from the sensors 2A to 2D and the sensors 2A to 2D in the sensors 2A to 2D by keeping the wafer W horizontal during the transfer. The distance from the position where the light is irradiated similarly changes. Accordingly, regarding the sensors 2A to 2D, if the time from the decrease start time t11 to the decrease stop time t12 of the separation distances LA to LD is the distance decrease times T1A to T1D, T1A = T1B = T1C = T1D. Further, regarding the sensors 2A to 2D, if the time from the rising start time t21 to the rising stop time t22 of the separation distances LA to LD is the distance rising times T2A to T2D, T2A = T2B = T2C = T2D. The separation distances LA to LD at times t12 to t21 are LA = LB = LC = LD.

  Subsequently, with respect to an example when the wafer W is abnormally placed on the hot plate 12, with reference to FIGS. Explained. FIG. 10 shows a transition of the separation distance L acquired when the wafer W is abnormally placed as described above as a timing chart similarly to FIG. 6, and FIG. 10 is also referred to as appropriate. . FIG. 10 shows the transition of L after time t3 in FIG. 6, that is, after the elevating pins 16 are lifted to support the wafer W.

  For example, when the holding body 21 is displaced on the hot plate 12 in the + Y direction with respect to the normal position and the lift pins 16 are raised, the wafer W is positioned on the lift pins 16 at the normal position (mounting region R1). Is supported by shifting in the + Y direction. However, it is assumed that the wafer W is positioned on each sensor 2. The raising / lowering pins 16 supporting the wafer W are lowered, and the separation distances LA to LD start to decrease (time t11, FIG. 7). Then, one end side (+ Y direction side) of the wafer W rides on the position regulating pin 15 while the elevating pins 16 are lowered, and the lowering is stopped, and the decrease in LA and LB is stopped. Then, when the lift pins 16 continue to descend and the other end side (−Y direction side) of the wafer W further descends and supported by the support pins 14, the decrease in LC and LD stops (FIG. 8). , FIG. 9). Accordingly, the decrease stop time t12 of the separation distance L (LA to LD) is different from each other, and the distance decrease time T1 (T1A to T1D) is T1A≈T1B <T1C≈T1D. Then, the wafer W is inclined with respect to the hot plate 21 and is shifted in the + Y direction with respect to the mounting region R1. Further, the separation distances LA to LD after the decrease stop time t12 are LA≈LB> LC≈LD.

  After the wafer W is placed in this manner, the lift pins 16 are raised, and the other end of the wafer W is first lifted by contacting the lift pins 16, and the LC and LD start to rise. One end side of the slidable plate abuts on the lifting pins 16 and rises, and LA and LB start to rise. That is, the rising start times t21 of the separation distances LA to LD are different from each other. Thereafter, the wafer W is transferred from the lift pins 16 to the holding body 21 in the same manner as when the transfer is normally performed, and the rising stop times t22 of the separation distances LA to LD coincide with each other. Therefore, the distance increase time T2 (T2A to T2D) is T2A≈T2B <T2C≈T2D. When the wafer W rides on the position restriction pin 15 as described above, there is a magnitude relationship between the distance decrease time T1, the distance increase time T2, and the separation distance L from time t12 to time t21.

  By the way, in the above example, the wafer W is shifted in the + Y direction from the center point P of the placement region R1 and rides on the position regulating pin 15, so that the distance decrease time T1, the distance increase time T2, and the time t12 to time t21 are separated. The magnitude relationship for each of the distances L is as described above, but this magnitude relationship depends on the direction of displacement of the wafer W. For example, when the wafer W is shifted in the + J direction (see FIG. 9), the end in the + J direction stops descending before the end in the other direction, and the wafer W rises from the hot plate 12. In order to stop rising later than the other end portions, T1B <T1A≈T1D <T1C, T2B <T2A≈T2D <T2C, and from time t12 to t21, LB> LA≈LD> LC.

  Although illustration of the magnitude of L in T1, T2, and t12 to t21 when the wafer W is displaced in the other direction is omitted, the magnitude relationship between T1, T2, and L between the sensors 2 regardless of which direction is shifted. That is, when the variation occurs, the control unit 3 can determine whether or not the position restriction pin 15 has been climbed. This determination may be performed using any one of T1, T2, and L. By the way, acquiring the magnitude relationship in this way for L detects whether the wafer W is inclined so that one of the ± X, ± Y, ± J, and ± K directions becomes higher. Is equal. Therefore, hereinafter, there may be a case where the acquisition of the magnitude relationship for L = the detection of the inclination of the wafer W.

  Subsequently, for another example in which the delivery of the wafer W to the hot plate 12 becomes abnormal, FIGS. 11 to 13 showing the state of the wafer W and the temporal change of the separation distance L acquired by the control unit 3 as a timing chart. This will be described with reference to FIG. FIG. 14 also shows the transition of the separation distance L after time t3, as in the chart of FIG. In this example, the foreign matter H is attached on the hot plate 12 at a position shifted in the + J direction from the center point P of the placement region, and the upper end of the foreign matter H is higher than the upper end of the support pin 14. First, as in the case of normal delivery, the wafer W is delivered to the lift pins 16 raised from the holding body 21, the lift pins 16 are lowered, and the separation distances LA to LD start to decrease (FIG. 11, FIG. 11). Time t11)

  While the elevating pins 16 are descending, the back surface of the wafer W comes into contact with the foreign matter H, and one end side (+ J direction side) of the wafer W is directed upward with the foreign matter H as a fulcrum, and the other end side (−J direction side) of the wafer W. ), The wafer W tilts downward, and after the decrease in LA stops, the lowering of LB and LC stops. Thereafter, the other end portion of the wafer W is supported by the support pins 14, so that the lowering of the LD is stopped, and the wafer W is placed inclined with respect to the hot plate 12 (FIGS. 12 and 13). Thus, since the decrease stop time t12 of LA to LD is different between the sensors 2, the distance decrease time T1 becomes T1A <T1B≈T1C <T1D, and the separation distance L after the decrease stop time t12 is LA> LB. ≒ LC> LD.

  Thereafter, the raising / lowering pins 16 are raised, and the other end side (−J direction side) of the wafer W is first brought into contact with the raising / lowering pins 16 and lifted, the LD starts to rise, and thereafter, LB and LC start to rise. Thereafter, one end side (+ J direction side) of the wafer W is also brought into contact with the lifting pins 16 and lifted, and LA starts to rise. That is, the rising start times t21 of LA to LD are different from each other. Thereafter, the wafer W is transferred from the lift pins 16 to the holding body 21 in the same manner as when the transfer is normally performed. Therefore, since the rise stop times t22 of LA to LD coincide with each other, the distance rise time T2 satisfies T2A <T2B≈T2C <T2D. As described above, when the foreign matter H having the above size exists on the hot plate 21 and the wafer W is tilted on the hot plate 12, the distance decrease time T1, the distance rise time T2, and the time L from time t12 to time t21 are large. Since a relationship arises, the control part 3 can determine the presence or absence of the foreign material H by this magnitude relationship.

  The magnitude relationship between T1, the magnitude relationship between T2, and the magnitude relationship between L from time t12 to time t21 are determined depending on in which direction the foreign object H is displaced from the center point P. As an example of the case where the foreign matter H exists at another position, if the foreign matter H exists at a position shifted in the + Y direction from the center point P, the end portion of the wafer W on the + Y direction side is heated by the wafer W. When descending with respect to the plate 12, it comes into contact with the foreign matter H and stops descending before the end in the other direction. Then, when the wafer W rises from the hot plate 12, it stops rising later than the other end portions. Therefore, T1A≈T1B <T1C≈T1D, T2A≈T2B <T2C≈T2D, and from t12 to t21, LA≈LB> LC≈LD.

  Although illustration of T1, T2, and L when there is a foreign object H at another position is omitted, no matter which direction the foreign object H is located in any direction, a magnitude relationship occurs with respect to T1, T2, and L, respectively. The control unit 3 can determine the presence of the foreign matter H. This determination may be performed using any one of T1, T2, and L. Further, in which direction the foreign matter H is present with respect to the center point P may be detected by T1, T2 or L.

  By the way, for example, when the wafer W is placed on the hot plate 21 a predetermined number of times, when the magnitude relationship of L from time t12 to time t21 is the same, that is, when the wafer W is tilted in the same way, the foreign matter H becomes hot plate 21. An alarm for prompting cleaning of the hot plate 21 may be output as being fixed to the top. Since the foreign matter may adhere to the wafer W and be removed from the hot plate 21 along with the transfer of the wafer W, the predetermined number of times for placing the wafer W to make this determination may be one time. It is preferable that the number of times.

  Further, since the height of the position restricting pin 15 is a predetermined height, when the wafer W rides on the position restricting pin 15 as described above, the wafer W may be at a predetermined angle with respect to the horizontal plane. high. Therefore, the separation distance L between the times t12 and t21 varies as described above, and it is highly possible that the separation distance L falls within a predetermined range. Therefore, if each of the separation distances LA to LD falls within a predetermined range as described above, it is considered that LA to LD has ridden on the position restricting pin 15, and otherwise it has ridden on the foreign object H. May be considered. In the flow to be described later, each determination is made by regarding it as such.

  Subsequently, the state of the wafer W transferred from the holder 21 to the support pins 14 with a relatively large deviation from the normal position, and the change over time in the separation distance L acquired when the transfer is performed in this way. Will be described with reference to FIGS. For example, the holding body 21 that holds the wafer W is positioned at a position greatly deviated in the + Y direction from the example described in FIGS. 4 to 6 (time t1, t2), and the lift pins 16 are raised (time t3). The wafer W is supported by the elevating pins 16 and the holding body 21 is retracted from the hot plate 12. FIG. 15 shows the wafer W and the hot plate 12 at this time. The detection by the sensors 2C and 2D is not performed because the supported wafer W deviates from a normal position where it overlaps the placement region R1. When the wafer W supported as described with reference to FIG. 6 is positioned so as to overlap the placement region R1, the wafer W is detected by all the sensors 2. Accordingly, the control unit 3 determines whether or not the sensor 2 that cannot detect the wafer W is present when the wafer W is supported on the lift pins 16 as described above, thereby shifting the wafer W from the normal position. The presence or absence of can be detected.

  Among the sensors 2, the sensor that cannot detect the wafer W corresponds to the direction in which the wafer W is displaced from the normal position. An example in which the wafer W is displaced in the direction other than the + Y direction from this normal position indicates that the sensors 2A and 2C cannot be detected when the position is shifted in the + X direction, and the sensor 2D cannot be detected when the position is shifted in the −K direction. . Accordingly, it is possible to detect in which direction the wafer W is displaced and supported by the lift pins 16 from a sensor that cannot detect the wafer W.

  When the direction of wafer W displacement on the lift pins 16 is detected in this way, the lift pins 16 are lowered after the holding body 21 has advanced, and the wafer W is transferred to the holding body 21 again. The holding body 21 moves by a predetermined amount in the direction in which the positional deviation of the wafer W detected when it is supported by the elevating pins 16 is eliminated, that is, in the direction opposite to the direction in which the deviation is detected. For example, when it is detected that the wafer W is displaced in the + Y direction as shown in FIG. 15, the holding body 21 that has received the wafer W is -Y opposite to the + Y direction as shown in FIG. Move a predetermined amount in the direction. Note that the holding body 21 moves in the −X direction when a shift in the + X direction is detected as described above, and a predetermined amount in the + K direction when a shift in the −K direction is detected. After the holding body 21 moves by a predetermined amount, the elevating pins 16 are raised again, and the wafer W is supported by the elevating pins 16. The case where the wafer W is transferred from the holding body 21 to the lifting pins 16 has been described. Similarly, the case where the wafer W is transferred from the lifting pin 16 to the holding body 21 is detected in the same manner as described above. And position correction can be performed.

Subsequently, as described above, when the wafer W is transferred from the holding body 21 to the lift pins 16, the tip of one of the lift pins 16 is broken as shown in FIGS. 18 and 19. The temporal change of the separation distance L acquired in this case will be described with reference to the timing chart of FIG. In the example shown in FIGS. 18 and 19, the lifting pin 16 on the −Y direction side from the center point P of the placement region R <b> 1 is bent.
After the holding body 21 is positioned on the hot plate 12, the elevating pins 16 are raised (time t3). Since the lifting pins 16 are bent, the wafer W is tilted and supported by the lifting pins 16, and as shown in FIG. 19, the end on the -Y direction side is lower than the original height, and the + Y direction side is higher than the original height. Become.

  Thereafter, even after the holding body 21 is retracted and retracted from the hot plate 21, the wafer W remains tilted as such. Accordingly, as shown in the timing chart of FIG. 20, after time t3, the wafer W can be detected by each sensor 2, but the separation distance L varies. Therefore, the control unit 3 can detect the presence or absence of breakage of the elevating pins 16 based on the presence or absence of variations in the separation distance L. The detection of the breakage of the lift pins 16 is not limited to the time when the wafer W is transferred from the holding body 21 to the lift pins 16, and the lift pins 16 support the wafer W in order to transfer the wafer W to the holding body 21. The same can be done when rising.

  Next, the transfer of the wafer W between the holder 21 and the heating module 1 and each determination performed by the control unit 3 during the transfer will be described in order with reference to the flow of FIG. First, the holding body 21 holding the wafer W moves forward from the outside of the hot plate 12 onto the hot plate 12 (step D1), the raising and lowering pins 16 are raised (step D2), and the raising and lowering pins 16 cause the wafer W to move. After being pushed up from the holding body 21 and supported, the holding body 21 moves backward (step D3). After the holding body 21 moves backward, it is determined whether or not the separation distances LA to LD detected by the sensor 2 are all appropriate values (step D4). When there is a value that is not an appropriate value among the separation distances LA to LD, a coping operation is performed (step D5).

  FIG. 22 is a flowchart showing the handling operation of step D5. In this step D5, it is first determined whether or not the wafer W is displaced with respect to the mounting region R1 of the hot plate 21 on the lift pins 16. Specifically, it is determined whether there are one or two sensors 2 that cannot detect the wafer W as illustrated in FIGS. 15 and 16 (step E1). If it is determined in step E1 that all of the sensors 2 have detected the wafer W or three or more sensors cannot detect the wafer W, it is determined whether or not there is an abnormality in the lift pins 16. Specifically, as illustrated in FIG. 18 to FIG. 20, all the sensors 2 detect the wafer W and vary between the separation distances L, that is, whether or not the wafer W on the lift pins 16 is inclined. Is determined (step E2).

  If it is determined in step E2 that there is no abnormality in the lift pins 16, that is, there is no variation between the separation distances L, it is determined that there is an abnormality in the sensor 2 (step E3). Thereafter, the operation of each part of the heating module 1 stops (step E4). The wafer W left in the heating module 1 is unloaded by, for example, a user of the apparatus.

  When it is determined in step E1 that the wafer W is displaced, the sensor 2 that has not detected the wafer W detects the displacement direction of the wafer W relative to the mounting region R1, and the holding body 21 moves forward and backward. After the transfer of the wafer W to the holding body 21 by the lowering of the pins 16, the holding body 21 moves by a predetermined amount in the direction in which the detected positional deviation is eliminated as illustrated in FIG. , The support of the wafer W on the lift pins 16 again, and the retraction of the holding body 21 are sequentially performed (step E5). When step E5 is performed, the coping operation D5 is finished and the above step D4 is executed again. Therefore, when the predetermined amount of movement of the holding body 21 in step E5 is insufficient to eliminate the positional deviation of the wafer W, the process proceeds to step D5 again, and the position correction by the holding body 21 in step E5 is performed. Will be performed again. Thereby, the positional deviation of the wafer W is eliminated.

  When it is determined in step E2 that the raising / lowering pin 16 has an abnormality, it is determined that the heating module 1 is an abnormal module (step E6). Thereafter, it is determined whether or not the processing can be continued by such a lift pin 16. Specifically, for example, the standard deviation of LA to LD is calculated, and it is determined whether or not this standard deviation is larger than a reference value (step E7). When the process cannot be continued, that is, when it is determined that the standard deviation is larger than the reference value, step E4 described above is performed. When it is determined that the process can be continued, that is, the standard deviation is equal to or less than the reference value, the coping operation D5 is finished, and then step D4 is performed again. However, when step D4 is performed again, if it is determined in step E7 that the module is abnormal, it does not proceed to step D5 even if it is determined that the separation distances LA to LD are not appropriate values. Then, the process proceeds to Step D6 described later.

  When it is determined in step D4 that the separation distances LA to LD are all appropriate values, the elevating pin 16 is lowered (step D6), and the separation distance L is decreased as described in FIG. 6, FIG. 10, FIG. To start. Then, the wafer W is placed on the hot plate 12, and the value of the separation distance L is constant. That is, for each of the sensors 2A to 2D, a decrease start time t11 and a decrease stop time t12 of the separation distances LA to LD are detected, and thereby distance decrease times T1A to T1D from time t11 to time t12 are acquired. Furthermore, LA to LD that have become constant after time t12 are acquired. Then, it is determined whether or not these acquired values are normal, that is, whether T1A = T1B = T1C = T1D and LA = LB = LC = LD after time t12 (step D7).

  When it is determined that T1 and L acquired in step D7 are not normal, the wafer W is displaced while the elevating pins 16 are lowered, and the position regulating pins 15 of the wafer W as illustrated in FIGS. It is determined whether or not the boarding has occurred. More specifically, it is determined whether T1A to T1D have a magnitude relationship, LA to LD after time t12 have a magnitude relationship, and whether or not the separation distances LA to LD have predetermined values (step). D8).

  If it is determined in step D8 that the position restriction pin 15 has not been ridden, it is determined whether or not the foreign matter H of the wafer W illustrated in FIGS. More specifically, it is determined whether or not the distance reduction times T1A to T1D have a magnitude relationship, and the separation distances LA to LD after time t12 are in a magnitude relationship (step D9). If it is determined in step D9 that the foreign matter H does not exist, it is determined that the sensor 2 has an abnormality (step D10), and the wafer W placed on the hot plate 12 is subjected to an abnormal heat treatment. (Step D11). The above-described step D11 is also performed when it is determined in step D8 that riding on the position regulating pin 15 has occurred and when it is determined in step D9 that the foreign matter H exists. After step D11 is performed, step D13 described later is performed.

  If it is determined in step D7 that the acquired T1 and L are normal, the wafer W placed on the hot plate 12 is determined to have been subjected to normal heat treatment (step D12). Thereafter, the lift pins 16 are raised (step D13), the wafer W is supported on the lift pins 16, and the separation distance L starts to rise. Thereafter, the raising and lowering of the elevating pins 16 is stopped, and the raising of the separation distance L is stopped. Then, the rising stop time t22 of the separation distance L described in FIG. 6, FIG. 10, FIG. 14, etc. is detected.

  Thereafter, after the raising and lowering of the lifting pins 16 is stopped, for example, it is determined whether or not the separation distances LA to LD are all appropriate values after time t22 (step D14). When it is determined that there is a separation distance LA to LD that is not an appropriate value, the coping operation described with reference to FIG. 22 is performed in the same manner as in step D5 (step D15). However, in the coping operation of step D15, if step E5 ends or if it is determined in step E7 that the process can be continued, the process proceeds to step D14 instead of step D4. When the countermeasure operation of step D15 proceeds to step D14 via steps E6 and E7, the separation distance LA to LD is an appropriate value in step D14 even if the separation distance LA to LD is not an appropriate value. Is determined, and the process proceeds to the subsequent step D16. By the way, Step E5 during the coping operation of Step D15 is a step for receiving the wafer W at the normal position of the holding body 21 in Step D16 in the subsequent stage. That is, in step E of step D15, for example, the wafer W is held at a position shifted from the normal holding position, and the positional deviation of the wafer W is corrected.

  When it is determined in step D14 that the separation distances LA to LD are all appropriate values, the holding body 21 moves forward on the hot plate 21, and the wafer W is transferred to the holding body 21 by the lowering of the lifting pins 16 in order. The wafer W is unloaded from the heating module 1 by the holding body 21 (step D16).

  According to the coating and developing apparatus including the heating module 1 and the holding body 21 described above, the sensors 2A to 2D that irradiate ultrasonic waves are provided at different positions on the peripheral edge of the wafer W, The separation distances LA to LD with the sensors 2A to 2D are acquired. Based on the data of the time-dependent transition of the separation distances LA to LD, it is detected whether or not the mounting region R1 of the hot plate 12 and the state of the wafer W above the mounting region R1 are normal. Therefore, it is possible to accurately detect whether or not these states are normal.

  Since the wafer W in which the mounting state in the mounting region R1 is abnormal is identified as an abnormally heat-treated wafer W, throughput can be reduced by eliminating the trouble of inspecting whether there is an abnormality after the heat processing. Can be improved. Further, even when such an abnormal wafer W is not abnormal, the lifting pins 16 are transferred to the holding body 21 and carried out of the heating module 1. Therefore, it is possible to save the user from entering the apparatus and collecting the abnormal wafer W. Further, since the state of the wafer W above the hot plate 21 can be monitored without using a relatively expensive device such as a camera, there is an advantage that the manufacturing cost of the apparatus can be suppressed.

  In the heating module 1, whether or not the position of the wafer W is normal in a state where the wafer W before being placed on the hot plate 12 is supported by the lift pins 16 is based on the separation distances LA to LD. Detected. And when it determines with it not being normal, position correction | amendment by the holding body 21 is performed. Therefore, it is possible to suppress an abnormal process from being performed on the wafer W and to suppress a decrease in yield. Furthermore, when the wafer W after the heat treatment is supported by the lift pins 16, whether the position of the wafer W is normal is detected based on the separation distances LA to LD, and when it is determined that the wafer W is not normal. The position is corrected by the holding body 21, and as a result, the wafer W is delivered to the normal position of the holding body 21. Therefore, it is possible to prevent the wafer W from being dropped and damaged from the holder 21 that has received the wafer W.

  By making it possible to correct the position of the wafer W on the upper and lower pins 16 as described above, even if an abnormality is detected in the position of the wafer W, it is not necessary to stop the operation of the apparatus due to this abnormality. Therefore, since the frequency at which the operation of the heating module 1 stops can be suppressed, a reduction in the throughput of the apparatus can be prevented.

  Further, whether or not the lifting pins 16 are damaged is determined based on the separation distances LA to LD, and if the degree of inclination of the wafer W to be supported is relatively small even when it is determined that the pins 16 are damaged, the heating module is used. Processing at 1 continues. Therefore, it is possible to prevent the operation of the apparatus from being stopped unnecessarily, and it is possible to prevent a decrease in the throughput of the apparatus from this point of view.

  The sensors 2 </ b> A to 2 </ b> D are not limited to be provided so as to be embedded in the hot plate 21, but may be provided on the surface of the hot plate 21. In that case, if the height of the sensor 2 is relatively large, a temperature distribution is likely to be formed above and below the sensor 2, so that a temperature difference is formed between the sensor 2 and its surroundings when viewed from the wafer W. There is a possibility that the in-plane temperature of the wafer W varies during the heating. Therefore, as shown in FIG. 23, it is preferable that the sensors 2A to 2D (only 2A and 2B are displayed in the drawing) are formed in a thin film shape. The height H of the sensors 2A to 2D configured in this thin film shape is, for example, 0.05 mm or less.

  Further, the separation distance L is not limited to being obtained based on a signal acquired from one sensor 2. For example, one sensor 2 and another sensor 2 are arranged close to each other. That is, the one sensor 2 and the other sensor 2 irradiate ultrasonic waves to positions adjacent to each other on the wafer W. When wafers W having the same height are measured, the output signal voltage of one sensor 2 and the output signal voltage of another sensor 2 are set to be different from each other. Then, the difference value between the output signal voltage of one sensor and the output signal voltage of another sensor is monitored as the separation distance L. By doing in this way, the temperature drift of the sensor 2 is canceled and the detection accuracy of the separation distance L can be improved.

  Further, the position and number of sensors are not limited to the above example. FIG. 24 shows an example in which a sensor 2E configured in the same manner as the sensors 2A to 2D is provided at the center of the hot plate 12 in addition to the sensors 2A to 2D. Hereinafter, the distance between the sensor 2E acquired by the sensor 2E and the wafer W is referred to as LE. By providing the sensors 2A to 2E as described above, when the wafer W heated by the hot plate 12 is warped, the direction of warpage and the degree of warpage can be detected. The detection of the direction of warping is to detect whether the peripheral portion of the wafer W is warped higher than the central portion or whether the central portion of the wafer W is warped higher than the peripheral portion. The detection of the degree of warping is to detect the difference in height between the center portion and the peripheral portion of the wafer W.

  FIG. 25 is a side view of the wafer W that has warped, and FIG. 26 is a timing chart of LA to LE acquired when the wafer W is warped. FIG. 27 is a side view of the wafer W that has been warped downward, and FIG. 28 is a timing chart of LA to LE acquired by the wafer W being warped as described above. Thus, the detection of warpage may be performed on the wafer W to be a semiconductor product, or may be performed on a test wafer W that does not become a semiconductor product to be heat-treated in order to set various processing conditions in the module. Also good.

(Second Embodiment)
Next, the heating module 4 according to the second embodiment will be described focusing on the differences from the heating module 1. 29 and 30 are a longitudinal side view and a plan view of the heating module 4, respectively. The heating module 4 includes a horizontal cooling plate 41 on which the wafer W is placed. In the figure, R2 is a mounting area of the wafer W on the cooling plate 41. The cooling plate 41 includes a refrigerant flow path (not shown), and the wafer W placed on the cooling plate 41 is adjusted to a predetermined temperature. When the wafer W heated by the hot plate 21 is placed on the cooling plate 41, the wafer W is cooled. With the shutter 23 opened, the driving mechanism 42 causes the cooling plate 41 to move between the above-described ± X between the hot plate 21 and the standby position outside the hot plate 21 (the positions shown in FIGS. 29 and 30). Move in the direction.

  In the figure, reference numeral 43 denotes an elevating pin, which is provided outside the hot plate 21 and is moved up and down by the elevating mechanism 40. Between the cooling plate 41 and the holding body 21 at the standby position, the wafer W is delivered by the lift pins 43. The wafer W is transferred between the cooling plate 41 moved on the hot plate 21 and the hot plate 21 by the lift pins 16. In the figure, 44 is a support pin provided on the surface of the cooling plate 41 and is configured in the same manner as the support pin 14 on the hot plate 21, and the wafer W placed on the cooling plate 41 is placed on the support pin 44. Supported by

  In addition, ultrasonic sensors 5 </ b> A to 5 </ b> D having the same configuration as the ultrasonic sensors 2 </ b> A to 2 </ b> D are embedded in the cooling plate 41, and are connected to the control unit 3 via the amplifier 22. For example, the sensor 5 (5A to 5D) also continues to irradiate ultrasonic waves upward while the module 4 is operating, like the sensor 2, and the controller 3 separates the separation distance (RA) between the ultrasonic sensors 5A to 5D and the wafer W. To RD). Similar to the detection of the positional deviation direction of the wafer W relative to the mounting region R1 based on the separation distances LA to LD described in the first embodiment, the correction of the positional deviation, and the detection of the foreign matter H on the hot plate 21, 3 can detect the direction of the positional deviation of the wafer W relative to the mounting region R2, correct the positional deviation, and detect the foreign matter H on the cooling plate 41 based on the acquired separation distances RA to RD. . Further, since the resist film formed on the wafer W does not change before being placed on the hot plate 21, when the positional deviation is detected for the wafer W placed on the cooling plate 41, the cooling plate is moved by the elevating pins 43. The wafer W can be lifted from 41 and the position of the wafer W can be corrected by the holder 21.

  The operation of the heating module 4 will be described focusing on the differences from the operation of the heating module 1. The holding body 21 holding the wafer W moves forward and is positioned on the cooling plate 41 positioned at the standby position. Thereafter, the same steps as steps D2 to D6 in FIG. 21 are performed. However, the operation of the raising / lowering pins 16 is assumed to be the operation of the raising / lowering pins 43, and the object on which the wafer W is placed is read as being the cooling plate 41 instead of the hot plate 21. Therefore, for example, when the wafer W is displaced with respect to the mounting region R2 of the cooling plate 41 on the lifting pins 43, the position correction by the holding body 21 is performed so that this displacement is eliminated. FIG. 31 shows a flow after the elevating pins 43 in step D6 are lowered and the wafer W is placed on the cooling plate 41. Hereinafter, description will be given with reference to FIG.

  Separation distances RA to RD are acquired during execution of step D6, and distance reduction times T1A to T1D are calculated based on the separation distances RA to RD, similarly to the separation distances LA to LD of the first embodiment. Further, the separation distances RA to RD after time t12 are acquired. It is determined whether or not each of these acquired values is normal, specifically, for example, T1A = T1B = T1C = T1D and whether LA = LB = LC = LD after time t12 (step F1). ). When it is determined that it is not normal, it is determined whether or not the foreign matter H exists on the cooling plate 41. Specifically, it is determined whether there is a magnitude relationship between T1A to T1D and whether there is a magnitude relationship between RA to RD after time t12 (step F2). When it is determined that there is no foreign matter H, it is determined whether or not the wafer W is displaced with respect to the transfer region R2 while the elevating pins 43 are being lowered. Specifically, for example, it is determined whether one or two of the sensors 5 are in a state where the wafer W is not detected (step F3). If it is determined that the position is not displaced, it is determined that the sensor 5 is abnormal (step F4), and the operation of the heating module 4 is stopped (step F5).

  When it is determined that each value acquired in step F1 is normal, it is determined that normal cooling processing has been performed on the wafer W placed on the cooling plate 41 (step F6). Advance to the hot platen 21 (step F7). If it is determined in step F2 that the foreign matter H is present, it is determined that an abnormal cooling process has been performed on the wafer W placed on the cooling plate 41 (step F8). Step F7 is performed. If it is determined in step F3 that the wafer W has been displaced, the lift pins 43 are raised to push the wafer W (step F9), and a handling operation is performed (step F10).

  The handling operation in step F10 is the same as the handling operation D5 including the group of steps E described in FIGS. 21 and 22. However, the operation of the lift pins 16 is the operation of the lift pins 43, and the wafer W is placed. The subject to be read is replaced with the cooling plate 41 instead of the hot plate 21. If the position correction of the wafer W in step E5 is performed in the handling operation in step F10, or if it is determined in step E7 that the processing can be continued, the lifting pins 43 are lowered and the wafer W is again on the cooling plate 41. (Step F11). Thereafter, the operation of step F7 is performed, and the cooling plate 41 on which the wafer W is placed advances.

  When step F7 is performed and the cooling plate 41 on which the wafer W is placed moves onto the hot plate 21, the elevating pins 16 rise to support the wafer W (step F12), and the cooling plate 41 moves back to the standby position. (Step F13). Thereafter, similarly to Step D4 of the first embodiment, it is determined whether or not the separation distances LA to LD detected by the sensor 2 are appropriate values (Step F14), and are determined to be appropriate values. In this case, the lift pins 16 are lowered, and the wafer W is placed on the hot plate 21 (step F15). Thereafter, the operations of Steps D7 to D12 described in the first embodiment are performed, and it is determined whether or not the wafer W is normally placed and the heat treatment is performed.

  When it is stabilized that the value is not an appropriate value in step F14, a coping operation is performed (step F16). The coping operation in step F16 is performed in substantially the same manner as the coping operation consisting of the group of steps E in FIG. 22. However, when it is determined that there is a positional deviation in step E1 as a difference, the cooling plate 41 is moved to the hot plate 21. After moving up and the lifting pins 16 are lowered, the cooling plate 41 returns to the standby position. Then, each step after the above-mentioned step F9 is performed.

  Next, an operation when the wafer W is transferred from the hot plate 21 to the holding body 21 via the cooling plate 41 will be described with reference to the flow of FIG. First, the lift pins 16 are raised to push up the wafer W (step G1), and it is determined whether or not the acquired separation distances LA to LD are appropriate values, as in step D14 of the first embodiment ( Step G2). When it is determined that the value is not an appropriate value, a coping operation is performed (step G3). The coping operation in step G3 is different from the coping operation in step D5 described with reference to FIG. 22, and step E1 is not performed, and is started from the determination of the abnormality of the lift pins 16 in step E2. Except for these differences, the handling operation in step G3 is configured by the same step E group as the handling operation in step D5. If it is determined in step E7 that the processing can be continued, the processing proceeds to step G4 described later. .

  When it is determined in Step G2 that the separation distances LA to LD are appropriate values, the cooling plate 41 moves onto the hot plate 21 (Step G4), the elevating pins 16 are lowered and the wafer W is received by the cooling plate 41. (Step G5). Then, the cooling plate 41 moves backward to the standby position (step G6), the raising / lowering pins 43 rise to push up the wafer W, and the separation distances RA to RD rise (step G7). Thereafter, the raising and lowering of the elevating pins 43 stops, and the separation distances RA to RD are constant.

  Then, similarly to step D14 of the first embodiment, it is determined whether or not the separation distances RA to RD are appropriate values (step G8). If it is determined that it is not appropriate, a coping operation is performed (step G9). The coping operation at step G9 is the same as the coping operation consisting of the group of steps E in FIG. If the wafer W position correction in step E5 is performed in the handling operation in step G9 or it is determined in step E7 that processing can be continued, step G10 described later is performed. When it is determined in step G8 that each value is appropriate, the holding body 21 is moved forward to the lower side of the wafer W, the wafer W is transferred to the holding body 21 by the lowering of the lifting pins 16, and the heating module 4 by the holding body 21. The wafer W is unloaded from (step G10).

  Also in the second embodiment, the same effect as in the first embodiment can be obtained. In the second embodiment, the heat plate 21 is provided at a position relatively far away from the moving path of the holder 21 (the transfer area of the wafer W). Therefore, even if a camera or the like is provided on the moving path, it is difficult to observe the surface state of the hot plate 21, so that it is particularly effective to detect the state of the wafer W with the ultrasonic sensor 2 as described above. .

  By the way, as shown in FIGS. 33 and 34, when the elevating pins 43 are lowered and the wafer W is being lowered toward the placement region R2 of the cooling plate 41, the position of the wafer W on the elevating pins 43 is shifted in the -X direction. Thus, it is assumed that the sensors 5B and 5D cannot detect the wafer W. When the 5B and 5D wafers W cannot be detected as described above, it is determined that the wafer W has been displaced in the −X direction, and for example, in parallel with the lowering of the lifting pins 43, The cooling plate 41 is moved in the −X direction. Then, the cooling plate 41 may be stopped at a position where the wafer W can be detected by all the sensors 5A to 5D, and the wafer W may be placed on the placement region R2 as shown in FIG. When the wafers W cannot be detected by the sensors 5B and 5D instead of the sensors 5B and 5D, it is determined that the positional deviation in the + X direction has occurred instead of the positional deviation in the −X direction, and the cooling plate 41 is in the + X direction. Move to. Further, in performing the correction of the position of the cooling plate 41 in this way, the movement of the cooling plate 41 is not limited to being performed in parallel with the lowering of the elevating pin 43, and if it is determined that a position shift has occurred, the elevating pin 43 is lowered. The position of the cooling plate 41 may be corrected during the stop.

(Third embodiment)
In 3rd Embodiment, as shown to FIG. 36, FIG. 37, the ultrasonic sensor 6 (6A-6D) comprised similarly to the ultrasonic sensors 2 and 5 in the holding body 21 is provided. The sensors 6 </ b> A to 6 </ b> D are arranged on the inner peripheral side surface of the holding body 21 in a matrix like the sensors 2 and 5 described above, and irradiate ultrasonic waves upward. An operation when the holding body 21 receives the wafer W supported by the lift pins 16 of the heated heating module 1 will be described. First, the holding body 21 advances from the outside of the hot plate 21 onto the hot plate 21 and is positioned below the wafer W. At this time, when there is a sensor that cannot detect the wafer W among the sensors 6 </ b> A to 6 </ b> D, the holding body 21 is moved by a predetermined amount in a direction corresponding to the sensor that cannot be detected, and the position of the holding body 21 with respect to the wafer W is corrected. . If there is a sensor that still cannot detect the wafer W after the predetermined amount of movement, the holding body 21 is further moved by a predetermined amount in the direction corresponding to the sensor.

  36 and 37 show a state in which the wafer W cannot be detected by the sensors 6A and 6B. In FIGS. 38 and 39, the holding body 21 is moved in the + X direction from the states of FIGS. The example which corrected | amended is shown. The timing chart of FIG. 40 shows the change over time of the separation distance (MA to MD) between the wafer W and the sensors 6A to 6D acquired when such correction is performed. Time t31 in the chart shows a state in which the holding body 21 is at the position of FIGS. 36 and 37, and time t32 shows a state in which the holding body 21 has moved to the positions of FIGS.

  When the wafer W can be detected by all the sensors 6, the holding body 21 moves up (time t33), and the separation distances MA to MD decrease. When the wafer W is held by the holding body 21, the separation distances MA to MD are constant (time t34). Thereafter, the holding body 21 moves to a module subsequent to the heating module 1. For example, the held wafer W is pushed up from the holding body 21 by the lift pins of the module, and the separation distances MA to MD rise (time t35). ) When the elevating pins are fully raised, the increase of the separation distances MA to MD is stopped (time t36). Thereafter, the holding body 21 is retracted and retracted from the subsequent module, and each sensor 6 cannot detect the wafer W.

  According to the third embodiment, since the holding body 21 can be prevented from receiving the wafer W at an abnormal position, the wafer W is dropped from the holding body 21 during the transfer of the wafer W by the holding body 21. Can be prevented. Accordingly, it is possible to prevent the wafer W from being damaged due to the drop and the situation where the apparatus is stopped in order to collect the dropped wafer W.

  An example of a coating and developing apparatus to which the heating module 4 is applied will be illustrated with reference to FIGS. However, the heating module 1 may be applied instead of the heating module 4. 41, 42, and 43 are a plan view, a perspective view, and a schematic longitudinal side view of the coating and developing apparatus 7, respectively. The coating / developing device 7 is configured by connecting a carrier block K1, a processing block K2, and an interface block K3 in a straight line. The exposure apparatus K4 is connected to the interface block K3. In the following description, the arrangement direction of the blocks K1 to K3 is the front-rear direction. The carrier block K <b> 1 applies the carrier C, carries it in and out of the developing device 1, and transfers the wafer W from the carrier C via the mounting table 71, the opening / closing part 72, and the opening / closing part 72 of the carrier C. And a mounting mechanism 73.

  The processing block K2 is configured by stacking first to sixth unit blocks L1 to E6 for performing liquid processing on the wafer W in order from the bottom. For convenience of explanation, “BCT” is a process for forming a lower antireflection film on the wafer W, “COT” is a process for forming a resist film on the wafer W, and a process for forming a resist pattern on the exposed wafer W is performed. Sometimes expressed as “DEV”. In this example, as shown in FIG. 42, two BCT layers, COT layers, and DEV layers are stacked from the bottom. The wafer W is transferred and processed in parallel in the same unit block.

  Here, as a representative of the unit blocks, the COT layer L3 will be described with reference to FIG. A plurality of shelf units U are arranged in the front-rear direction on the left and right sides of the conveyance region 74 from the carrier block K1 to the interface block K3, and a resist coating module 81 and a protective film forming module 82 which are liquid processing modules are arranged on the other side. They are arranged side by side in the front-rear direction. The resist coating module 81 supplies a resist to the surface of the wafer W to form a resist film. The protective film forming module 82 supplies a predetermined processing liquid onto the resist film, and forms a protective film that protects the resist film. The shelf unit U includes the heating module 4 described above. In the transfer region 74, a transfer mechanism M3 for the wafer W is provided, and the transfer mechanism M3 includes the holding body 21 described above.

  The COT layer L4 is configured in the same manner as the COT layer L3, and 2B is provided as a resist coating module instead of 2A. The other unit blocks L1, L2, L5 and L6 are configured in the same manner as the unit blocks L3 and L4 except that the chemicals supplied to the wafer W are different. The unit blocks L1 and L2 include an antireflection film forming module instead of the resist coating modules 81 and 82, and the unit blocks L5 and L6 include a developing module. In FIG. 43, the transport mechanisms of the unit blocks L1 to L6 are shown as M1 to M6.

  On the carrier block K1 side in the processing block K2, a tower T1 that extends vertically across the unit blocks L1 to E6 and a transfer arm 75 that is a transfer mechanism that can be moved up and down to transfer the wafer W to the tower T1. And are provided. The tower T1 is configured by a plurality of modules stacked on each other. The modules provided at the respective heights of the unit blocks L1 to L6 are connected to the wafers W between the transfer mechanisms M1 to M6 of the unit blocks L1 to L6. Can be handed over. As these modules, a delivery module TRS provided at the height position of each unit block, a temperature control module CPL for adjusting the temperature of the wafer W, a buffer module for temporarily storing a plurality of wafers W, and a wafer W A hydrophobizing module for hydrophobizing the surface of the surface is included. In order to simplify the description, the hydrophobic treatment module, the temperature control module, and the buffer module are not shown.

  The interface block K3 includes towers T2, T3, and T4 extending up and down across the unit blocks L1 to L6, and is a transfer mechanism that can be moved up and down to transfer the wafer W to and from the tower T2 and the tower T3. An interface arm 76, an interface arm 77 that is a transfer mechanism that can be moved up and down to transfer the wafer W to the tower T2 and the tower T4, and a wafer W between the tower T2 and the exposure apparatus K4. An interface arm 78 is provided.

  The tower T2 includes a delivery module TRS, a buffer module for storing and retaining a plurality of wafers W before exposure processing, a buffer module for storing a plurality of wafers W after exposure processing, and a temperature for adjusting the temperature of the wafers W. Although the adjustment module and the like are stacked on each other, illustration of the buffer module and the temperature adjustment module is omitted here. In the coating and developing apparatus 1, a place where the wafer W is placed is described as a module. The towers T3 and T4 are also provided with modules, but the description thereof is omitted here.

  The conveyance path of the wafer W composed of the coating / developing device 7 and the exposure device K4 will be described. The wafer W is transferred from the carrier C to the transfer module TRS0 of the tower T1 in the processing block K2 by the transfer mechanism 73. The wafer W is transferred from the delivery module TRS0 to the unit blocks L1 and L2. For example, when transferring the wafer W to the unit block L1, among the transfer modules TRS of the tower T1, the transfer module TRS1 corresponding to the unit block L1 (the transfer module capable of transferring the wafer W by the transfer arm F1). The wafer W is transferred from the TRS0. When the wafer W is transferred to the unit block L2, the wafer W is transferred from the TRS0 to the transfer module TRS2 corresponding to the unit block L2 among the transfer modules TRS of the tower T1. Delivery of these wafers W is performed by the delivery arm 75.

  The wafer W thus distributed is transported in the order of TRS1 (TRS2) → antireflection film forming module → heating module 4 → TRS1 (TRS2), and then transferred to the transfer module TRS3 corresponding to the unit block L3 by the transfer arm 75. Are distributed to the delivery module TRS4 corresponding to the unit block L4.

  The wafers W thus distributed to TRS3 and TRS4 are transported in the order of TRS3 (TRS4) → resist coating module 81 → heating module 4 → protective film forming module 82 → heating module 4 → tower T2 delivery module TRS. . Thereafter, the wafer W is loaded into the exposure apparatus K4 through the tower T3 by the interface arms 76 and 78. The exposed wafer W is transferred between the towers T2 and T4 by the interface arm 77 and transferred to the transfer modules TRS5 and TRS6 of the tower T2 corresponding to the unit blocks L5 and L6, respectively. Then, after being transported to the heating module 4 → developing module → heating module 4 → delivery module TRS, it is returned to the carrier C via the transfer mechanism 73.

The examples shown in the above-described embodiments can be combined with each other. Moreover, although the example which provided an ultrasonic sensor in a heating module and a holding body and monitored the position of the wafer W was demonstrated, the location to provide is not restricted to them. For example, the position of the wafer W may be monitored by providing an ultrasonic sensor in the resist coating module 81 or the protective film forming module 82 for performing various liquid treatments on the wafer W. Further, in order to deliver the wafer W between the modules, an ultrasonic sensor may be provided in the delivery module TRS on which the wafer W is temporarily placed to monitor the position of the wafer W. The present invention is not limited to being applied to the coating and developing apparatus described above, and includes a wafer W transport mechanism, and a liquid processing module that supplies a chemical solution for forming an insulating film, a cleaning solution, and the like to the wafer W. The present invention may be applied to a substrate processing apparatus, or may be applied to a substrate processing apparatus including a wafer W transfer mechanism and a module that performs dry etching on the wafer W, or a wafer W transfer mechanism and an ALD (Atomic Layer). You may apply to the substrate processing apparatus provided with the film-forming module which performs Deposition) and CVD (Chemical Vapor deposition).
Further, when placing the wafer W supported by the lift pins on the hot plate 13, the hot pins 12 are lifted by the lift mechanism without raising and lowering the lift pins, and the wafer W is placed on the hot plate 12 at this time. An abnormality in the mounting state of the wafer W may be determined based on the separation distance L.

W Wafers LA to LD Separation distance R1 Placement area 1 Heating module 12 Heat plate 14 Support pin 15 Position restriction pin 16 Lifting pins 2A to 2D Ultrasonic sensor 21 Holder 3 Control unit

Claims (17)

In a substrate processing apparatus having a substrate transfer mechanism for transferring a substrate,
A placement section on which the substrate is placed;
A plurality of ultrasonic sensors for obtaining the transition data of the separation distance from each of the substrates by irradiating ultrasonic waves to different portions of the substrate, respectively,
A determination unit that determines whether or not the state of the substrate on the placement unit is normal based on the transition data of the separation distance;
A substrate processing apparatus comprising:   The substrate processing apparatus according to claim 1, wherein the state of the substrate includes a tilt and a position of the substrate.   The substrate processing apparatus according to claim 1, wherein the placement unit is configured by a substrate holder constituting the substrate transport mechanism or a module in which the substrate is transported by the substrate transport mechanism. The above-mentioned mounting part is composed of modules,
The module includes a lifting member that supports the substrate and moves up and down to deliver the substrate to the substrate transport mechanism.
The substrate processing apparatus according to claim 3, wherein the state of the substrate determined by the determination unit is a state of the substrate supported by the elevating member.   5. A control unit is provided that outputs a control signal so that the position of the substrate on the lift member is corrected by the substrate transport mechanism based on the transition data of the separation distance. Substrate processing equipment.   The determination unit determines whether or not an abnormality has occurred in the elevating member based on transition data of the separation distance acquired from the substrate supported by the elevating member. Item 6. The substrate processing apparatus according to any one of Items 3 to 5.   The determination unit determines whether or not the state of the substrate placed on the placement unit is normal based on the separation distance data acquired when the substrate moves up and down relative to the placement unit. The substrate processing apparatus according to claim 1, wherein: The mounting portion is configured by a module including the hot plate that heats the mounted substrate.
The plurality of ultrasonic sensors are provided so as to irradiate ultrasonic waves to a central portion and a peripheral portion of the substrate, respectively, in order to detect warpage of the heated substrate as the state of the substrate. The substrate processing apparatus according to claim 1. In a substrate processing apparatus having a substrate transfer mechanism for transferring a substrate,
Placing the substrate on a placement portion of the substrate;
A step of continuously irradiating ultrasonic waves to different locations of the substrate by a plurality of ultrasonic sensors provided in the mounting portion, and obtaining transition data of a separation distance from the locations,
A step of determining whether or not the state of the substrate on the placement unit is normal based on the transition data of the separation distance;
A substrate processing method comprising:   The substrate processing method according to claim 9, wherein the state of the substrate includes a tilt and a position of the substrate. The placement unit is configured by a module that transports a substrate by the substrate transport mechanism.
A step of supporting the substrate by an elevating member provided in the module and elevating and lowering to deliver the substrate to the substrate transport mechanism;
The step of determining whether or not the state of the substrate is normal includes the step of determining whether or not the state of the substrate supported by the elevating member is normal. 10. The substrate processing method according to 10.   12. The substrate processing method according to claim 11, further comprising a step of correcting the position of the substrate on the lifting member by the substrate transport mechanism based on the transition data of the separation distance.   10. The method of determining whether an abnormality has occurred in the elevating member based on transition data of the separation distance acquired from the substrate supported by the elevating member. The substrate processing method as described in any one of thru | or 12. The step of determining whether or not the state of the substrate is normal,
A step of determining whether or not the state of the substrate placed on the placement unit is normal based on the data of the separation distance acquired when the substrate moves up and down relative to the placement unit. The substrate processing method according to claim 9, further comprising: The mounting portion is configured by a module including the hot plate that heats the mounted substrate.
In order to detect the warp of the heated substrate as the state of the substrate by the plurality of ultrasonic sensors, the method includes a step of irradiating a central portion and a peripheral portion of the substrate with ultrasonic waves, respectively. The substrate processing method according to claim 9.   Whether or not the state of the substrate placed on the placement unit is normal based on the transition data of the separation distance continuously acquired when the substrate moves up and down relative to the placement unit. 16. The substrate processing method according to claim 9, further comprising a step of determining whether or not. A storage medium storing a computer program used in a substrate processing apparatus having a substrate transfer mechanism for transferring a substrate,
A storage medium characterized in that the program has steps for executing the substrate processing method according to any one of claims 9 to 16.

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