JP2016162760A - Exposure apparatus, and method of manufacturing article - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an exposure apparatus in which the distribution characteristics of an effective light source are adjusted individually and conveniently for each image height.SOLUTION: An exposure apparatus 100 for exposing the pattern of an original plate R on a substrate W, includes: an illumination optical system 8 having multiple light source formation means 2 for forming a plurality of secondary light sources, respectively, by using a plurality of lenses, and illuminating the original plate R with light from the plurality of secondary light sources; a light source 1 for making the light impinge on a plurality of regions in each of the plurality of lenses; and a control section 10 for individually adjusting the amount of light impinging on each of the plurality of regions from the light source 1. The control section 10 individually adjusts the amount of light impinging on each of the plurality of regions, so that the effective power supply is different at at least two positions on the substrate W.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an exposure apparatus and a method for manufacturing an article.

  In a lithography process included in a process of manufacturing a semiconductor device or the like as an article, an exposure apparatus converts a pattern of an original (such as a reticle) into a photosensitive substrate (a wafer having a resist layer formed on the surface) via a projection optical system. Etc.). For example, exposure apparatuses used for manufacturing semiconductor devices are required to have higher resolution in accordance with recent high integration. As one of countermeasures, there is a technique (modified illumination technique) that forms an optimum effective light source according to the pattern of the original. Here, the effective light source refers to the angular distribution of the exposure light beam incident on the substrate surface, and can also be expressed as the light intensity distribution on the pupil plane of the projection optical system. This effective light source is formed in a desired shape by distributing the light intensity distribution on the pupil plane (for example, near the exit surface of the fly-eye lens) corresponding to the original Fourier transform plane in the illumination optical system that illuminates the original plate. It can be realized by adjusting to. Here, the fidelity of the distribution characteristics (such as symmetry) of the effective light source affects the image performance. For example, asymmetry factors of the effective light source may include uneven reflection of the mirror, eccentricity of the optical system, or a difference in effect due to a difference in incident angle to the antireflection film. Therefore, Patent Document 1 discloses an exposure apparatus that adjusts the eccentricity using an adjustment mechanism that can move in a plane substantially perpendicular to the optical axis while measuring an effective light source. Patent Document 2 discloses an illumination device that adjusts the distribution characteristics of an effective light source for each image height.

JP 2007-36016 A JP 2000-269114 A

  In response to the recent demand for high transfer accuracy, it is important to set the distribution characteristics of the effective light source more appropriately than ever. This is because if the angle of the exposure light is not appropriate, image misalignment occurs when the substrate is at the defocus position, and the line width of the left and right patterns at the defocus position when the symmetry of the effective light source is broken. This is because a difference may occur, resulting in an influence on the transfer accuracy. Therefore, in the conventional exposure apparatus, the position of each element of the illumination optical system is eccentrically adjusted so that exposure light having an optimal angular characteristic and symmetry can be irradiated in a certain standard illumination mode A. However, when it is necessary to switch to the modified illumination mode B different from the illumination mode A, it is not always appropriate to set each element to the same eccentricity adjustment position as the illumination mode A. This is because the optical path is different in each illumination mode, and the effect of the antireflection film formed on the optical element in the illumination optical system changes depending on the angle of the light beam.

  Here, in the technique disclosed in Patent Document 1, the distribution characteristics of the effective light source are adjusted in the same direction while maintaining the distribution itself over the entire exposure area on the substrate in accordance with the switching of the illumination mode. I can. However, it cannot be individually adjusted at each point (each image height) in the exposure area. On the other hand, in the technology disclosed in Patent Document 2, the effective light source is adjusted for each image height by fixing the adjustment target of each image height, and individually producing and using the effective light source adjusting means appropriately. . For this reason, if the object to be adjusted changes due to a change in illumination mode or a change in the transmittance distribution of the optical system in the illumination optical system over time, the adjustment means needs to be remanufactured.

  The present invention has been made in view of such a situation, and an object of the present invention is to provide an exposure apparatus that adjusts the distribution characteristics of effective light sources individually and simply for each image height.

  In order to solve the above-described problems, the present invention is an exposure apparatus that exposes a pattern of an original on a substrate, and includes a multi-light source forming unit that forms a plurality of secondary light sources using a plurality of lenses, An illumination optical system that illuminates the original with light from a plurality of secondary light sources, a light source that causes light to enter a plurality of regions in each lens of a plurality of lenses, and a light amount of light that enters each region of the plurality of regions individually from the light source And a controller that adjusts the amount of light incident on each of the plurality of regions individually so that effective light sources at at least two positions on the substrate are different. .

  According to the present invention, for example, it is possible to provide an exposure apparatus that adjusts the distribution characteristics of the effective light source individually and simply for each image height.

It is a figure which shows the structure of the exposure apparatus which concerns on 1st Embodiment of this invention. It is a figure which shows the relationship between a light source and a to-be-irradiated surface. It is a figure which shows the relationship between the micro lens of a multiple light source formation means, and an effective light source. It is a figure which shows the light quantity of the quadrupole illumination as an example of adjustment. It is a figure which shows the state of the entrance plane of the multiple light source formation means at the time of adjusting a symmetry. It is a figure which shows the structure of the exposure apparatus which concerns on 2nd Embodiment of this invention. It is a figure which shows the structure of the exposure apparatus which concerns on 3rd Embodiment of this invention.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

(First embodiment)
First, the configuration of the exposure apparatus according to the first embodiment of the present invention will be described. The exposure apparatus according to the present embodiment is used, for example, in a lithography process in a semiconductor device manufacturing process, and an image of a pattern formed on a reticle R that is an original plate on a wafer W that is a substrate by a scanning exposure method. A projection type exposure apparatus that exposes (transfers) onto (a substrate) is used.

  FIG. 1 is a schematic diagram showing a configuration of an exposure apparatus 100 according to the present embodiment. 1 and the following drawings, the Z axis is parallel to the optical axis of the projection optical system 9, and the scanning direction of the wafer W during exposure (or the reticle R and the wafer W in the same plane perpendicular to the Z axis). The relative movement direction is taken in the Y axis, and the X axis is taken in the non-scanning direction perpendicular to the Y axis. The exposure apparatus 100 includes a light source 1, an illumination optical system 8, a reticle stage 12, a projection optical system 9, a wafer stage 13, and a control unit 10.

  The light source 1 irradiates light to the illumination optical system 8 as a supply source of exposure light. In particular, the light source 1 in the present embodiment forms, for example, a two-dimensional light source shape by two-dimensionally arranging a plurality of LED (light emitting diode) elements as semiconductor light sources in the light irradiation direction. The type and number of LEDs are not particularly limited, and LED elements such as GaAs, GaAlAs, GaP / GaP, and GaAlAs / GaAs can be used. In addition, LED elements having various emission wavelengths such as InGaAlP, InGaAIP / GaP, InGaAIP / GaAs, InGaAIP / GaAs, AlInGaN, AlGaN, InGaN, GaN, AlN, ZnO, ZnSe, and diamond may be used. Further, it is more preferable to use an LED element such as AlInGaN, AlGaN, or InGaN, which has a light emission wavelength suitable for exposure of a resist (photosensitive agent) previously applied on the wafer W. The light source 1 may be an LD (semiconductor laser) element instead of the LED element.

  The illumination optical system 8 illuminates the reticle R by adjusting the light from the light source 1. The illumination optical system 8 includes a multi-light source forming unit 2, an irradiation lens 3, a field stop 4, a first imaging lens 5, a second imaging lens 6, and a deflection mirror 7. The multiple light source forming means 2 is, for example, a fly-eye lens, and is an optical element that forms a plurality of secondary light sources (multiple light sources) by two-dimensionally arranging a plurality of microlenses according to the incident direction of light. . The vicinity of the exit surface 2b of the multiple light source forming means 2 corresponds to the pupil plane of the illumination optical system 8 and forms an effective light source. The fly-eye lens includes a cylindrical lens array, a microlens array, and the like, but may be an optical rod or a diffractive optical element. The irradiation lens 3 superimposes an effective light source on the field stop 4. The field stop 4 includes a plurality of movable light shielding plates that form an arbitrary aperture shape, and limits the exposure range on the reticle surface (and also the wafer surface) that is the irradiated surface. The first and second imaging lenses 5 and 6 illuminate the reticle R with the aperture shape defined by the field stop 4.

  The reticle R is an original made of, for example, quartz glass on which a pattern (for example, a circuit pattern) to be transferred is formed on the wafer W. The reticle stage 12 holds the reticle R and is movable in the X and Y axis directions. The projection optical system 9 projects the light (circuit pattern image) that has passed through the reticle R onto the wafer W at a predetermined magnification β (for example, 1/4 times).

  The wafer W is a substrate (photosensitive substrate) made of, for example, single crystal silicon, on which a resist is applied on the surface. The wafer stage 13 holds the wafer W via a wafer chuck (not shown), and is movable in the respective axial directions of X, Y, and Z (may include ωx, ωy, and ωz that are the respective rotation directions). is there. In particular, during exposure, scanning (scan) exposure is performed while the reticle stage 12 and the wafer stage 13 are synchronized. The wafer stage 13 is provided with a detector (detector) 11 for detecting the amount of exposure light incident on the wafer surface on the surface thereof. The detector 11 is, for example, an illuminometer, and the light receiving surface is made to coincide with the wafer surface, and receives the illumination light in the irradiation area while moving along with the driving of the wafer stage 13. The detector 11 has a pinhole having a sufficiently small diameter with respect to the spread of the light beam at the upper part of the light receiving surface. The wafer stage 13 can also defocus the detector 11 in the optical axis direction (Z-axis direction) depending on the application. The detector 11 transmits the output signal to the light amount control unit 14 described later.

  The control unit 10 is configured by, for example, a computer and is connected to each component of the exposure apparatus 100 via a line, and can control operation and adjustment of each component according to a program or the like. In particular, in the present embodiment, the control unit 10 includes a light amount control unit 14 that is connected to the light source 1 and controls turning on / off (or light emission output) of a plurality of LED elements constituting the light source 1. In response to the designation of the illumination mode at the time of exposure, the light amount control unit 14 outputs a turn-on / off instruction to each LED element. Thereby, the light source 1 can form various modified illumination light sources such as annular illumination, quadrupole illumination, or dipole illumination. The light quantity control unit 14 further includes a pupil coordinate processing unit 15 and a coordinate relationship determination unit 16. The pupil coordinate processing unit 15 expresses the effective light source measured by the detector 11 with pupil coordinates for each image height. The coordinate relationship determination unit 16 determines the relationship between the pupil coordinates corresponding to each image height processed by the pupil coordinate processing unit 15 and the address of the LED element corresponding to this pupil coordinate.

  Next, adjustment of the effective light source in the exposure apparatus 100 will be described. First, the positional relationship between the light source 1 and the surface of the field stop 4 (field stop surface) as the irradiated surface that is in a conjugate relationship with the reticle surface and the wafer surface will be described. FIG. 2 is a schematic cross-sectional view showing the positional relationship between the light source 1 and the field stop surface. In FIG. 2, for the sake of simplification of explanation, it is assumed that the microlenses constituting the multi-light source forming means 2 are arranged in five rows (FE1 to FE5) in accordance with the light incident direction, but the present invention is not limited to this. . Accordingly, the LED elements constituting the light source 1 are arranged in 15 rows (LED1 to LED15) in the light irradiation direction, and three LED elements are individually provided for a plurality of regions in one minute lens. Although it corresponds, this invention is not restricted to this. Here, the irradiation surface of the light source 1 and the incident surface 2a of the multiple light source forming means 2 are in an optically conjugate relationship. In addition, the entrance surface of each microlens and the field stop surface are optically conjugate. With such a configuration, the light reaching the image height Fa on the field stop surface corresponds to the position of the LED 3 on the incident surface of the minute lens FE1, corresponds to the position of the LED 9 on the incident surface of the minute lens FE3, and is minute. This corresponds to the position of the LED 15 on the incident surface of the lens FE5. Therefore, if the light amount of the LED 3, LED 9 or LED 15 is adjusted appropriately, the light amount balance of the effective light source at the image height Fa can be adjusted without affecting the light amount balance at another image height, that is, without changing. It becomes. Here, the light quantity balance of the effective light source is, in other words, the symmetry of the effective light source. The symmetry of the effective light source is included in the distribution characteristics of the effective light source, and other distribution characteristics include the shape, size (σ value), or center-of-gravity position shift of the effective light source.

  FIG. 3 is a schematic cross-sectional view showing the relationship between three microlenses FE1 to FE3 and an effective light source on the wafer surface as an example. In FIG. 3, the deflection mirror 7 is not shown. Here, for simplification of explanation, if one-dimensional consideration is given and the image height of the entrance surface of each microlens is x and the image height of the wafer surface is X, the relationship X = βx is established. Here, β is a conversion magnification from the image height of the incident surface of each microlens to the image height of the wafer surface, and the irradiation lens 3, the first imaging lens 5, the second imaging lens 6, and the projection optical system 9. Determined by design.

Further, assuming that there are n rows of microlenses from FE1 to FEn, the light quantity distribution on the incident surface of each microlens is arbitrarily determined by the corresponding LED elements and can be expressed as fi (x) (where i = 1 to n). Therefore, the light amount Ei (X) from the microlens FEi to the image height X is expressed by Expression (1) from the relationship of X = βx.
Ei (X) = fi (x) (1)
As shown in FIG. 3, the light amount Ei (X) is a light amount for each incident angle on the wafer surface, and f1 (X) to fn (X) substantially represent the distribution of effective light sources. It will be. That is, when the image height X to be adjusted on the wafer surface is determined, the light quantity of the LED element corresponding to the position of the image height x (= X / β) on the incident surface of each microlens is controlled, so The effective light source can be adjusted without affecting it. Here, since three LED elements correspond to one minute lens, there are three image heights X on the wafer surface of the adjustable effective light source, but the image height to be adjusted is N points. If so, the configuration may be such that N LED elements correspond to one minute lens.

Next, a method for changing only the effective light source distribution without changing the illuminance distribution on the wafer surface will be described. Here, the illuminance distribution represents how much the illuminance is deviated from the center position (the optical axis of the entire illumination optical system 8). The illuminance distribution I (X) on the wafer surface is obtained by superimposing the light incident distributions f1 (x) to fn (x) of each microlens on the field stop surface, and the illuminance x = 0. As a reference, it is expressed by equation (2).
I (X) = Σfi (x) / Σfi (0) (2)

  Further, in accordance with the example shown in FIG. 3, three LED elements correspond to each of the three microlenses arranged in the X-axis direction, and the light amounts of the LED elements are respectively on the X minus side, on the axis, and on the X plus side. It corresponds to the image height of the wafer surface. Hereinafter, it is considered to adjust the light amount balance of the effective light source on the X minus side. In this case, the light amount control unit 14 first reduces only the light amount of the LED element corresponding to the X minus side of f1 (x) from 90 to the state where all the light amounts of the LED elements are 100. (Table 1) is a table showing the state of the light quantity at this time.

  However, in this state, only the illuminance on the X minus side is reduced to 290/300 = 0.967, and the illuminance on the axis and the X plus side remains 1 respectively, so that the illuminance distribution changes. Therefore, in order to prevent the illuminance distribution from changing (constant), the light amount control unit 14 also reduces the light amounts of the two LED elements corresponding to the on-axis and the X plus side by 10 to reduce the illuminance distribution on the X minus side. Make it equal to the illuminance. At this time, in order not to change the distribution of the effective light source on the axis and on the X plus side, the light amounts f1 (x), f2 (x), and f3 (x) on the axis and the X plus side are all the same. Must be a value. Therefore, the light quantity control unit 14 sets the light quantity per LED element as 100− (10 ÷ 3) = 96.667. (Table 2) is a table showing the state of the light quantity at this time.

  As a result, the illuminance remains the same for all image heights, that is, 290 ÷ 290 = 1. Therefore, the light quantity control unit 14 does not change the illuminance distribution before the adjustment of the effective light source, and the effective value on the X minus side. Only the light source can be adjusted. Here, the method of adjusting the effective light source by directly changing the light amount of the LED element is exemplified, but the effective light source may be adjusted by changing the light amount as a time average by blinking the LED element.

  Next, a method for individually adjusting the light amount balance of the effective light source for each image height will be described. Here, as an example, a case where the effective light source is quadrupole illumination will be described. FIG. 4 shows the upper, lower, left and right pole light amounts of the quadrupole illumination at three image heights (X minus side, axial, X plus side in order from the left in the figure) on the field stop plane conjugate with the wafer surface. FIG. For example, the left diagram regarding the X minus side shows the pole light amount when all of the LED elements corresponding to the X minus side are turned on. Table 3 is a table in which these values are entered. Note that “upper and lower left and right” here corresponds to the configuration shown in FIG. 1 and the coordinate axis representing it, and the upper and lower sides correspond to the Z plus side and the Z minus side, and the left and right correspond to the X plus side and the X minus side, respectively. 5 corresponds to the state shown in FIG. 4 and is a schematic plan view of the multiple light source forming means 2 when adjusting the symmetry of the effective light source as seen from the incident side. The aperture shape of each microlens is a rectangle that is substantially similar to the rectangular distribution of the illumination area and is long in the X-axis direction, and the vertical direction in the figure corresponds to the scanning direction at the time of exposure. In particular, in the present embodiment, the number of microlenses corresponding to each pole light emitting portion (hatched area in the figure) is about 50.

  Referring to FIG. 4, the position corresponding to the X minus side of the field stop surface is the right side of the microlens as viewed from the incident side. That is, if the right light amount on the entrance surface of the microlens is adjusted, it will act only on the X plus side of the field stop surface. First, consider each pole of the quadrupole illumination on the X minus side shown in the left diagram of FIG. In this case, the light quantity of the left pole among the four poles on the top, bottom, left and right is the lowest, 94. Therefore, the light quantity control unit 14 adjusts the light quantity of the remaining poles so as to match the light quantity of the left pole. Specifically, if the upper pole is dimmed by 6%, the lower pole is dimmed by 2%, and the right pole is dimmed by 4%, the pole balance is improved. In addition, since there are about 50 microlenses corresponding to each pole light emitting section, the amount of light per microlens corresponds to 2% of the total. Therefore, the light quantity control unit 14 selects three micro lenses (about 50) corresponding to the upper pole light emitting unit, similarly, one micro lens at the lower pole and two micro lenses at the right pole, and What is necessary is just to turn off the LED element corresponding to the right side (triangle mark in the figure) in the inside. Note that the minute lens to be turned off may be any of a plurality of lenses in the pole light emitting unit, and is not limited to the specific position of the minute lens shown in FIG.

  Similarly, for each pole of the quadrupole illumination on the axis shown in the middle diagram of FIG. 4, if the upper pole is dimmed by 4%, the left pole is dimmed by 2%, and the right pole is dimmed by 2%, Good pole balance. Therefore, the light quantity control unit 14 selects two micro lenses among the micro lenses corresponding to the upper pole light emitting unit, similarly, one micro lens with the left pole and one micro lens with the right pole, and the center portion thereof The LED element corresponding to (square mark in the figure) may be turned off. Furthermore, for each pole of the quadrupole illumination on the X plus side shown in the right diagram of FIG. 4, if the upper pole is dimmed by 6%, the left pole is dimmed by 2%, and the lower pole is dimmed by 2%, Good pole balance. Therefore, the light amount control unit 14 selects three micro lenses among the micro lenses corresponding to the upper pole light emitting unit, similarly, one micro lens on the left pole and one micro lens on the lower pole, and the right side (in the drawing) LED elements corresponding to circles) may be turned off.

  When the exposure apparatus is a so-called scanner that adopts a step-and-scan method, the illumination range is generally a slit shape, and is particularly narrow in the scanning direction (Y-axis direction). When the illumination range is narrow, the difference in image height of the distribution of effective light sources is small, and there is also an averaging effect by scanning. Therefore, when the present invention is applied to a scanner, the improvement effect is greater when the image height adjustment in the X-axis direction is performed than the image height adjustment in the scanning direction. Further, in order to perform adjustment with higher accuracy, the LED element may be two-dimensionally configured in the X-axis direction and the Y-axis direction with respect to one minute lens. This configuration is particularly effective when the exposure apparatus is a so-called stepper that employs a step-and-repeat method. As described above, the example in which the adjustment target is pole balance has been described. However, it is possible to similarly adjust the shape of the effective light source for each image height, the size for each image height, or the barycentric position of the light amount.

  Next, a method for measuring the illuminance distribution on the wafer surface will be described. The control unit 10 irradiates light to the light source 1 with the reticle R removed from the optical path, moves the wafer stage 13 as appropriate, and moves the detector 11 within the illumination area of the illumination optical system 8. The amount of light corresponding to the illuminance at each point on the wafer surface is projected onto the detector 11. Then, the control unit 10 can obtain the illuminance distribution on the wafer surface from the change in the sum of the outputs of the detector 11 according to the image height of the wafer W.

  Next, an effective light source measurement method will be described. First, the light amount control unit 14 irradiates light to the light source 1 with the reticle R removed from the optical path, and drives the field stop 4 to set a minute aperture corresponding to the position on the wafer surface to be measured. There is a method in which the detector 11 is defocused from the wafer surface in the optical axis direction. In this method, only the exposure light whose shape is limited by the field stop 4 once forms an image on the wafer surface and enters the detector 11 while reflecting the angle. Then, the light quantity control unit 14 moves the detector 11 having pinholes above the light receiving surface with respect to the wafer stage 13 horizontally within a range extending in, for example, a two-dimensional matrix, thereby causing the light receiving surface to move to the detector 11. The intensity of the light incident on is measured. Thereby, the light quantity control unit 14 can measure the angular distribution of the exposure light, that is, the effective light source. Similar measurement is possible by providing a minute aperture at a position conjugate with the field stop 4. For example, it is conceivable to arrange a reticle dedicated to effective light source measurement in which a minute aperture is formed by a Cr pattern or the like, or a dedicated plate configured in the apparatus with the field stop 4 opened. Alternatively, by using a two-dimensional CCD instead of the illuminometer as the detector 11, the effective light source may be collectively measured without the detector 11 moving horizontally.

  As described above, since the exposure apparatus 100 adjusts the distribution characteristics of the effective light source for each image height, the adjustment target can be adjusted by changing the illumination mode or changing the transmittance distribution of the optical system in the illumination optical system 8 over time. Even if it changes, it can be adjusted with high accuracy so as to obtain a desired effective light source. In addition, the exposure apparatus 100 does not need to separately prepare a plurality of adjustment means that match the case where the adjustment target changes in this way.

  As described above, according to the present embodiment, it is possible to provide an exposure apparatus that adjusts the distribution characteristics of the effective light source individually and simply for each image height.

(Second Embodiment)
Next, an exposure apparatus according to the second embodiment of the present invention will be described. The feature of the exposure apparatus according to the present embodiment is that an effective light source is adjusted using a laser light source instead of the light source 1 including a plurality of LED elements exemplified in the exposure apparatus 100 according to the first embodiment.

  FIG. 6 is a schematic view showing the arrangement of the exposure apparatus 200 according to this embodiment. Note that in the exposure apparatus 200, the same components as those in the exposure apparatus 100 according to the first embodiment are denoted by the same reference numerals, and description thereof is omitted. The exposure apparatus 200 includes a laser light source 21, a light distribution forming unit 19, a third imaging lens 17, a deflection mirror 20, and a fourth imaging lens 18 instead of the light source 1 in the first embodiment. .

  The laser light source 21 is, for example, a light source using an ArF excimer laser with a wavelength of about 193 nm, a KrF excimer laser with a wavelength of about 248 nm, an F2 excimer laser with a wavelength of about 157 nm, or a YAG laser, and the number thereof is not limited. . The light distribution forming means 19 is illuminated by using a shaping optical system that converts the aspect ratio of the cross-sectional shape of the parallel light from the laser light source 21 to a desired value and shapes the beam shape to a desired value. It is also possible to form a light beam having a size necessary for this. Further, an incoherent optical system that makes a coherent laser beam incoherent may be used.

  For example, the light distribution forming unit 19 is arranged at a position conjugate with the incident surface of the multi-light source forming unit 2, and a plurality of very small reflective driving elements are arranged two-dimensionally, and each element can be driven individually. It is Digital Micromirror Device (DMD). The driving element that is set to ON drives the reflecting surface so that the incident light is reflected in the direction in which the light is formed on the multi-light source forming unit 2. On the other hand, the driving element set to OFF drives the reflecting surface so that the incident light is reflected in a direction not reaching the multi-light source forming unit 2. Also in the present embodiment, for example, in order to individually adjust the three image heights in the X-axis direction as exemplified in the first embodiment, the light distribution forming unit 19 has three microlenses for one minute lens. The drive element is configured to correspond to the X-axis direction. And when changing the light quantity in a micro lens for every drive element, the light quantity control part 14 can set to arbitrary light intensity by switching ON / OFF of a drive element temporally.

  Such a configuration of the present embodiment also provides the same effects as those of the first embodiment.

(Third embodiment)
Next, an exposure apparatus according to a third embodiment of the present invention will be described. A feature of the exposure apparatus according to this embodiment is that the laser light source 21 is used in the same manner as the exposure apparatus 200 according to the second embodiment, but a transmissive liquid crystal device is used instead of DMD as the light distribution forming means. Is to adjust the effective light source.

  FIG. 7 is a schematic view showing the arrangement of the exposure apparatus 300 according to this embodiment. Note that in the exposure apparatus 300, the same components as those of the exposure apparatus 200 according to the second embodiment are denoted by the same reference numerals, and description thereof is omitted. The exposure apparatus 300 uses the second light instead of the light distribution forming unit 19 (first light distribution forming unit), the third imaging lens 17, the deflection mirror 20, and the fourth imaging lens 18 in the second embodiment. Distribution forming means 22 is provided. The second light distribution forming unit 22 is, for example, a liquid crystal device with variable transmittance disposed at a position conjugate with the incident surface of the multiple light source forming unit 2. The ultrafine element divided in the liquid crystal device is composed of a density filter whose transmittance is variable. Also according to the present embodiment, the same effects as those of the first embodiment can be obtained.

(Product manufacturing method)
The method for manufacturing an article according to an embodiment of the present invention is suitable, for example, for manufacturing an article such as a microdevice such as a semiconductor device or an element having a fine structure. In the method for manufacturing an article according to the present embodiment, a latent image pattern is formed on the photosensitive agent applied to the substrate using the above-described exposure apparatus (a step of exposing the substrate), and the latent image pattern is formed in this step. Developing the substrate. Further, the manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, and the like). The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

  As mentioned above, although preferable embodiment of this invention was described, this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

DESCRIPTION OF SYMBOLS 1 Light source 2 Multi-light source formation means 8 Illumination optical system 10 Control part 100 Exposure apparatus

Claims (7)

An exposure apparatus that exposes a pattern of an original on a substrate,
An illumination optical system that has multi-light source forming means for forming a plurality of secondary light sources using a plurality of lenses, and that illuminates the original with light from the plurality of secondary light sources;
A light source that causes the light to enter a plurality of regions in each lens of the plurality of lenses;
A controller that individually adjusts the amount of light incident on each of the plurality of regions from the light source,
The exposure apparatus, wherein the control unit individually adjusts the light amount of the light incident on each of the plurality of regions so that effective light sources at at least two positions on the substrate are different. The light source is a plurality of LEDs or LDs arranged in the irradiation direction of the light,
The light incident on the plurality of regions of the one lens is irradiated from the plurality of LEDs or the LD individually corresponding to the regions of the plurality of regions, respectively.
The exposure apparatus according to claim 1, wherein: A plurality of elements are arranged, and comprises a light distribution forming means that makes the light distribution variable by individually controlling the plurality of elements,
The light source is a laser light source;
The exposure apparatus according to claim 1, wherein: The light distribution forming means drives the elements individually,
The light incident on the plurality of regions of the one lens is respectively reflected by the plurality of elements individually corresponding to the regions of the plurality of regions.
The exposure apparatus according to claim 3, wherein: The light distribution forming means is a liquid crystal device having a density filter that individually varies the transmittance as the element,
The light incident on the plurality of regions of the one lens is transmitted through the plurality of density filters individually corresponding to the regions of the plurality of regions,
The exposure apparatus according to claim 3, wherein:   The light intensity of the light incident on each region of the plurality of regions so that the illuminance distribution on the substrate is constant based on the light amount at a position on the substrate that requires adjustment of the effective light source. The exposure apparatus according to claim 1, wherein the exposure apparatus is adjusted. A step of exposing the substrate using the exposure apparatus according to claim 1;
And developing the substrate exposed in the step.

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