JP2016139804A - Semiconductor device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which can be manufactured without undergoing a special process such as a plasma treatment, and which includes an insulation layer 3 excellent in adhesion between dissimilar materials, especially between an under fill 6 and an encapsulation material 7; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device of the present disclosure comprises a substrate 20 and an insulation layer 3 provided on the substrate 20, in which a recess 3a having a maximum depth of equal to or larger than 0.1 μm is formed on at least part of a surface of the insulation layer 3 on the side opposite to the substrate 20 side and a ratio of an area occupied by the recess 3a to a region of the surface in an area of 0.16 mwhich includes at least one recess 3a is equal to or higher than 5%.SELECTED DRAWING: Figure 1

Description

  The present disclosure relates to a semiconductor device and a manufacturing method thereof.

  Printed wiring boards and semiconductor devices are becoming thinner, more functional, and more reliable year by year. In addition, an insulating layer typified by a solder resist or a build-up material used in a printed wiring board or a semiconductor device is required to have excellent adhesion with different materials (underfill material, sealing material, etc.). . As a means for improving the adhesion, it is generally known to increase the surface roughness of the insulating layer. For example, when sealing is performed using an underfill or a sealing material in a semiconductor device, a technique for improving the adhesion by performing a plasma treatment on a solder resist on a printed wiring board has been studied (for example, Patent Document 1). reference).

JP 2014-074924 A

  According to the method described in Patent Document 1, it is necessary to perform plasma treatment in order to improve the adhesion between the solder resist and the different material. However, in order to perform the plasma processing, it is necessary to introduce a plasma processing apparatus, and an extra process for manufacturing a semiconductor device is increased, so that productivity is deteriorated and the cost of the semiconductor device is increased. Furthermore, since the surface of the surface other than the region where the adhesion needs to be improved is roughened by the plasma treatment, moisture, flux, etc. are easily absorbed, and the reliability (insulation reliability) of the semiconductor device may be adversely affected. There is.

  The present disclosure has been made in view of the above problems, and can be manufactured without passing through a special process such as plasma processing, and a semiconductor device including an insulating layer having excellent adhesion to different materials and a manufacturing method thereof The purpose is to provide.

  As a result of intensive studies, the present inventors have found that the above-mentioned problems can be solved by forming a specific recess in an arbitrary portion of the insulating layer without using a special device, and the present embodiment has been completed. It was.

That is, the present disclosure includes a substrate and an insulating layer provided on the substrate, and a recess having a maximum depth of 0.1 μm or more is formed on at least a part of the surface of the insulating layer opposite to the substrate side. Provided is a semiconductor device in which the ratio of the area occupied by the recess is 5% or more in a region having an area of 0.16 mm ² that is formed and includes at least one recess on the surface.

  The semiconductor device according to the present embodiment can be manufactured without going through a special process such as plasma treatment, and has excellent adhesion between the insulating layer and the different material. In addition, the original smooth surface of the insulating layer is maintained in a place where adhesion is not required, and absorption of excess moisture, flux, and the like is suppressed, so that the reliability of the semiconductor device is excellent.

In the present embodiment, it is preferable that a plurality of recesses are formed discontinuously in the region, and at least one area of the plurality of recesses is 0.000015 to 0.0025 mm ² . In this case, the adhesion between the insulating layer and the dissimilar material tends to be further improved.

  In the said embodiment, it is preferable that the insulating layer is formed using the photosensitive resin composition.

  The photosensitive resin composition preferably contains a photoreactive compound having a (meth) acryloyl group, and more preferably contains an acylphosphine compound.

  The insulating layer is preferably a solder resist.

  In addition, the present disclosure provides a method for manufacturing a semiconductor device, which includes the step of forming an insulating layer on a substrate. According to this manufacturing method, it is not necessary to perform plasma processing and it is not necessary to introduce a plasma processing apparatus, so that the manufacturing cost of the semiconductor device can be suppressed. In addition, since the original smooth surface of the insulating layer can be maintained in a location that does not require adhesion with different materials, the insulating layer can be prevented from absorbing excess moisture, flux, etc. Reliability can be improved.

The present disclosure is also a method for manufacturing a semiconductor device as described above, wherein a step of forming a photosensitive resin composition layer containing a photosensitive resin composition on a substrate and a predetermined portion of the photosensitive resin composition layer are provided. The step of irradiating actinic rays to form a photocured part and removing the region other than the photocured part, the at least part of the surface opposite to the substrate side of the photosensitive resin composition layer has a maximum depth. Forming a recess having a thickness of 0.1 μm or more so that the ratio of the area occupied by the recess in the region having an area of 0.16 mm ² including at least one recess on the surface is 5% or more. A manufacturing method is provided. According to this manufacturing method, not only the above-described effects can be obtained, but also, at the same time as the conventional manufacturing method of the insulating layer using the photosensitive resin composition, a predetermined recess is formed at an arbitrary portion of the insulating layer. Therefore, the semiconductor device manufacturing process can be shortened and productivity can be improved.

  According to the present disclosure, a semiconductor device including an insulating layer that can be manufactured without passing through a special process such as plasma processing and has excellent adhesion to dissimilar materials, particularly an underfill and a sealing material, and the semiconductor device Can be provided.

  In addition, according to the manufacturing method of the present disclosure, it is possible to reduce manufacturing time and manufacturing cost and improve reliability.

It is an end view which shows typically a semiconductor device provided with the insulating layer which formed the recessed part in the whole surface. It is an end view which shows typically a semiconductor device provided with the insulating layer which formed the recessed part in the specific location. It is an end view which shows the shape of a recessed part typically. It is a top view which shows the shape of a recessed part typically. It is an end view which shows typically a semiconductor device provided with the insulating layer after a plasma process. It is an end view which shows typically one Embodiment of the manufacturing method of a semiconductor device. It is a figure which shows typically the mask pattern used by this embodiment.

  Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the positional relationship such as up, down, left and right is based on the positional relationship shown in the drawings unless otherwise specified. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.

(Semiconductor device)
FIG. 1 is an end view schematically showing a semiconductor device including an insulating layer having recesses formed on the entire surface. FIG. 2 is an end view schematically showing a semiconductor device including an insulating layer in which a recess is formed at a specific location.

One mode of the semiconductor device according to this embodiment is described with reference to FIG. The semiconductor device according to the present embodiment includes, for example, a semiconductor element mounting substrate 50 and a semiconductor element 5 mounted on the semiconductor element mounting substrate 50. An underfill 6 is filled between the semiconductor element mounting substrate 50 and the semiconductor element 5, and the semiconductor element 5 is sealed with a sealing material 7. The semiconductor element mounting substrate 50 includes a substrate 20 and an insulating layer 3 formed on the substrate 20. The substrate 20 includes a base material 1 and a conductor layer 2 having a circuit pattern formed on the base material 1. On the surface of the insulating layer 3 opposite to the substrate 20 side (hereinafter, also simply referred to as “the surface of the insulating layer 3”), a recess 3 a is formed at a location in contact with the underfill 6 and the sealing material 7. Further, a connection bump 9 is formed in the opening 3b formed on the surface of the insulating layer 3 so that the conductor layer 2 is exposed. The semiconductor element 5 and the conductor layer 2 are connected to the connection bump 9. Is electrically connected. In the semiconductor device shown in FIG. 1, a plurality of recesses 3 a having a maximum depth of 0.1 μm or more are formed on the entire surface of the insulating layer 3, and at least one recess 3 a on the surface of the insulating layer 3 is formed. In a region having an area of 0.16 mm ² (hereinafter also referred to as “region A”), the ratio of the area occupied by the recesses 3 a is 5% or more. In the semiconductor device shown in FIG. 1, the ratio of the area occupied by the recesses 3a over the entire surface of the insulating layer 3 is also 5% or more.

The semiconductor device shown in FIG. 2 is different from the semiconductor device shown in FIG. 1 in that the recess 3 a is not formed on the surface of the insulating layer 3 and only the portion where the underfill 6 is in contact is formed. . In the semiconductor device shown in FIG. 2, a plurality of recesses 3a having a maximum depth of 0.1 μm or more are formed in at least a part of the surface of the insulating layer 3 (at least a part of the part in contact with the underfill 6). The ratio of the area occupied by the recess 3a in the area (area A) having an area of 0.16 mm ² including at least one recess 3a is 5% or more. In the semiconductor device shown in FIG. 2, the ratio of the area occupied by the recess 3a in at least a part of the surface of the insulating layer 3 where the underfill 6 is in contact is also 5% or more. In the semiconductor device manufactured by the conventional method for performing plasma treatment (see FIG. 5), the entire surface of the insulating layer 3 is roughened. However, the semiconductor device shown in FIG. Since the original smooth surface of the insulating layer is maintained at a place where the insulating layer 3 is not, the absorption of excess moisture, flux, etc. in the insulating layer 3 is suppressed as compared with a semiconductor device manufactured by a conventional method in which plasma treatment is performed. Therefore, the reliability as a semiconductor device is excellent. Note that the semiconductor device according to the present embodiment may be subjected to a special process such as a plasma process as long as the effects of the present embodiment are obtained.

  As shown in FIGS. 1 and 2, the recess 3 a may be formed on at least a part of the surface of the insulating layer 3, and may be formed on the entire surface of the insulating layer 3. The insulating layer 3 may include a plurality of the regions A. The semiconductor device according to the present embodiment may be other than the above.

  The ratio R of the area occupied by the recesses 3a in the region A (hereinafter also simply referred to as “ratio R”) is 5% or more. When the ratio R is less than 5%, the amount of the different material entering the recess 3a is reduced as a whole, so that it is difficult to obtain the effect of improving the adhesion with the different material. From the viewpoint of further improving the adhesion, the ratio R is preferably 10% or more, and more preferably 15% or more. The ratio R can be 90% or less, for example. Here, the area of the recess 3a represents a projected area when a portion of the recess 3a having a depth of 0.1 μm or more is observed from directly above.

  The number of the recesses 3a included in the region A (the recesses 3a formed in the region A) is preferably plural, but may be one. The number of the recesses 3a included in the region A may be one or more, for example, or ten or more. The number of the recesses 3a included in the region A may be, for example, 20000 or less, 2000 or less, or 200 or less.

  FIG. 3 is an end view schematically showing the shape of the recess. FIG. 4 is a top view schematically showing the shape of the recess. As shown in FIGS. 3 and 4, the shape of the recess 3a is not particularly limited, and may be, for example, a dot pattern. The dot pattern may be round, polygonal, indefinite, or the like. The recessed part 3a may be a recessed part connected continuously, for example. The ratio R may be set to 5% or more by forming long concave portions that are continuously connected (that is, forming concave portions 3a that are continuously long connected). In addition, when there are a plurality of recesses 3a formed in the region A, the plurality of recesses 3a may consist of only one type of recess having a specific shape, and may be a combination of a plurality of types of recesses having different shapes. May be. The plurality of recesses 3a are preferably formed discontinuously. The plurality of recesses 3a may be formed regularly or irregularly.

  The maximum depth (H) of the recess 3a is 0.1 μm or more. Here, “maximum depth (H)” means the depth from the surface of the insulating layer 3 to the bottom of the recess 3a (H in FIG. 3). When the maximum depth (H) is less than 0.1 μm, the effect of improving the adhesion with different materials is small. The maximum depth (H) is preferably 0.1 to 10 μm. When the maximum depth (H) is 10 μm or less, in the step of forming a different material (for example, underfill 6, sealing material 7, etc.) on the insulating layer 3, the semiconductor device is unlikely to be insufficiently filled with the different material. Tend to be more reliable. Even if the maximum depth (H) of the recess 3a is in the range of 0.1 to 10 μm, it is necessary to set the depth so that the surface of the substrate 20 is not exposed.

The area of the recess 3a is preferably 0.000015 mm ² or more. When there are a plurality of recesses 3a formed in the region A, it is preferable that at least one area of the plurality of recesses 3a is 0.000015 to 0.0025 mm ² . If the area of the recessed part 3a is the said range, there exists a tendency for the adhesiveness of an insulating layer and a dissimilar material to improve further. In the region A, two or more kinds of recesses 3a having an area of 0.000015 to 0.0025 mm ² may be mixed. In the region A, the area and the one or more recesses 3a in the range of 0.000015～0.0025Mm ^2, area one or more recesses 3a is outside the scope of 0.000015～0.0025Mm ² May be mixed. Area of the recess 3a may be a 0.008 mm ² or more, may also be 0.016 mm ² or more, may be 0.024 mm ² or more. The area of the recess 3a may be 0.144 mm ² or less. Further, the area of the recess 3a may be 0.16 mm ² or more. In this case, the ratio R is 100%.

In the present embodiment, the maximum depth (H) and area of the recess 3a can be measured using an optical interference type non-contact surface shape measuring apparatus. The measuring apparatus is not limited to this, and a laser microscope or the like that measures the surface shape may be used. The maximum depth (H) and area of the recess 3a are measured, for example, in the range of 0.16 mm ² (measurement range 8) using the measuring device, and the maximum depth of each recess 3a present in the measured region ( H) and a method of measuring the area. In addition, the area ratio R occupied by the recesses 3a in the region A can be obtained by the following method, for example. First, 10 regions having an area of 0.16 mm ² including at least one recess 3a are selected from the region where the recess 3a is formed on the surface of the insulating layer 3, and the area of the recess 3a is measured at the selected 10 locations. To do. Next, a value obtained by averaging the total area of the recesses 3a at each measurement location (sum of the total area of the recesses 3a at each measurement location ÷ 10) and the area of the measurement range (0.16 mm ² ). The ratio R is obtained from the relationship. In addition, the shape of the measurement range 8 includes, for example, a square, a circle, and the like. For convenience of measurement, the shape is preferably set to a square, and more preferably set to a square. Further, the area having an area of 0.16 mm ² is selected from the area where the recess 3 a is formed on the surface of the insulating layer 3, and as shown in FIG. 4, the area within the area where the recess 3 a is formed. When the plurality of recesses 3a are formed discontinuously at a narrow interval, the plurality of recesses 3a are selected as much as possible.

  The substrate 20 included in the semiconductor device according to the present embodiment is not particularly limited, but may be a substrate including a base material and a metal foil (for example, copper foil) formed on the base material, More specifically, it may be a substrate including a glass cloth-containing base material in which a glass cloth is impregnated with a resin and a conductor layer (for example, a copper layer) formed on the base material. In addition to the above, a build-up material, a silicon wafer, glass, a SUS plate, or the like can be used.

  The insulating layer 3 included in the semiconductor device according to this embodiment may be formed using any of a thermosetting resin composition, a thermoplastic resin composition, and a photosensitive resin composition. The resin composition used for forming the insulating layer 3 can be selected according to the site where the insulating layer 3 is formed. For example, when the insulating layer 3 is a build-up layer in a wiring board, a thermosetting resin composition is generally suitable, and a resin composition that easily contributes to shortening the process may be selected. Moreover, when the insulating layer 3 is the outermost layer of a wiring board as shown in FIGS. 1 and 2, it is preferable to select a photosensitive resin composition because it is easy to contribute to shortening the process. When using the photosensitive resin composition, the photocuring part of the photosensitive resin composition layer obtained by the exposure process mentioned later can be used as the insulating layer 3.

  As the photosensitive resin composition, photo radical polymerization, photo cationic polymerization, and other types of photosensitive resin compositions in general can be used. Among them, a photocationic polymerization resin composition with little oxygen inhibition can be used particularly preferably. Examples of such a resin composition include compounds containing a cationic photopolymerization initiator, an epoxy resin, or an oxetane resin. A resin composition containing an epoxy resin is effective in that it can further improve the adhesion between the insulating layer 3 and a different material and can improve the heat resistance of the insulating layer 3, and improve various reliability of the semiconductor device. Can do.

  In addition, a photo-radical polymerization resin composition is also effective. Examples of such a resin composition include (a) a photosensitive prepolymer having at least one ethylenically unsaturated group and a carboxyl group in the molecule, (b) a photopolymerization initiator, and (c) photoreactivity. Examples of the resin composition include a compound, (d) a polyfunctional epoxy resin, and (e) an inorganic filler.

  Among them, as the photopolymerization initiator (b), for example, benzophenone, N, N′-tetraalkyl-4,4′-diaminobenzophenone, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -Butanone-1,2-methyl-1- [4- (methylthio) phenyl] -2-morpholino-propanone-1,4,4'-bis (dimethylamino) benzophenone (Michler's ketone), 4,4'-bis ( Aromatic ketones such as diethylamino) benzophenone and 4-methoxy-4'-dimethylaminobenzophenone, quinones such as alkylanthraquinone and phenanthrenequinone, benzoin compounds such as benzoin and alkylbenzoin, benzoin such as benzoin alkyl ether and benzoin phenyl ether Ether compounds, benzy Benzyl derivatives such as dimethyl ketal, 2- (o-chlorophenyl) -4,5-diphenylimidazole dimer, 2- (o-chlorophenyl) -4,5-di (m-methoxyphenyl) imidazole dimer, 2 -(O-fluorophenyl) -4,5-diphenylimidazole dimer, 2- (o-methoxyphenyl) -4,5-diphenylimidazole dimer, 2,4-di (p-methoxyphenyl) -5 -2,4,5-triarylimidazole dimer such as phenylimidazole dimer, 2- (2,4-dimethoxyphenyl) -4,5-diphenylimidazole dimer, N-phenylglycine, N-phenyl Glycine derivatives, acridine derivatives such as 9-phenylacridine, 1,2-octanedione, 1- [4- (phenylthio) phenyl-, Oxime esters such as-(O-benzoyloxime)], coumarin compounds such as 7-diethylamino-4-methylcoumarin, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2, Thioxanthone compounds such as 4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide, bis (2,4,6-trimethylbenzoyl)- Acylphosphine compounds such as phenylphosphine oxide, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethyl-pentylphosphine oxide, 9-phenylacridine, 9-aminoacridine, 9- Pentylaminoacridine, 1,2-bis (9-acridinyl) ethane, 1,3-bis (9-acridinyl) propane, 1,4-bis (9-acridinyl) butane, 1,5-bis (9-acridinyl) Pentane, 1,6-bis (9-acridinyl) hexane, 1,7-bis (9-acridinyl) heptane, 1,8-bis (9-acridinyl) octane, 1,9-bis (9-acridinyl) nonane, Bis (9-acridinyl) alkanes such as 1,10-bis (9-acridinyl) decane, 1,11-bis (9-acridinyl) undecane, 1,12-bis (9-acridinyl) dodecane, 9-phenylacridine, 9-pyridylacridine, 9-pyrazinylacridine, 9-monopentylaminoacridine, 1,3-bis (9-acridinyl)- Compounds having an acridine ring such as -oxapropane, 1,3-bis (9-acridinyl) -2-thiapropane, 1,5-bis (9-acridinyl) -3-thiapentane, (2- (acetyloxyiminomethyl) Thioxanthen-9-one), (1,2-octanedione, 1- [4- (phenylthio) phenyl-, 2- (O-benzoyloxime)], ethanone, 1- [9-ethyl-6- (2 And compounds having an oxime ester such as -methylbenzoyl) -9H-carbazol-3-yl]-, 1- (O-acetyloxime)). These can also be used in combination. Among these, it is preferable to use an acylphosphine compound. Acylphosphine compounds are excellent in bottom curability and have a feature that they are less susceptible to oxygen inhibition. For this reason, the manufacturing method of a semiconductor device provided with the process of peeling a support film after the process of forming the photosensitive resin composition layer mentioned below and before the process of forming a photocuring part, ie, the influence by oxygen The present invention can be suitably applied to a method of manufacturing a semiconductor device that is relatively easy to receive. In addition, since it has excellent bottom curability, it is also effective when using photosensitive resin compositions colored with pigments, etc., and is also suitable for solder resists used for the outermost layer of semiconductor package substrates Can be applied.

  Further, (c) the photoreactive compound contains a photopolymerizable monomer having two or more ethylenically unsaturated groups (preferably a (meth) acryloyl group) in the molecule. This is preferable. The photopolymerizable monomer is used singly or in combination of two or more, and it is desirable to contain at least one polyfunctional photopolymerizable monomer having three or more ethylenically unsaturated groups in one molecule. . Among them, a polyfunctional photopolymerizable monomer having 6 or more ethylenically unsaturated groups in one molecule is effective for improving crack resistance during reflow mounting.

  It is also preferable to apply the following compounds. A bisphenol A-based (meth) acrylate compound, a compound obtained by reacting a polyhydric alcohol with an α, β-unsaturated carboxylic acid, a compound obtained by reacting a glycidyl group-containing compound with an α, β-unsaturated carboxylic acid, Examples thereof include urethane monomers such as (meth) acrylate compounds having a urethane bond in the molecule, and urethane oligomers. Besides these, nonylphenoxy polyoxyethylene acrylate, γ-chloro-β-hydroxypropyl-β ′-(meth) acryloyloxyethyl-o-phthalate, β-hydroxyalkyl-β ′-(meth) acryloyloxy Examples thereof include phthalic acid compounds such as alkyl-o-phthalate, (meth) acrylic acid alkyl esters, and EO-modified nonylphenyl (meth) acrylate.

  In the semiconductor device according to the present embodiment, the insulating layer 3 is preferably a solder resist that also serves as a protective film for the wiring after the substrate 20 is soldered and has various characteristics of a solder resist. For example, the solder resist is used as a plating resist or an etching resist when plating or etching is performed on the substrate 20, and is also left on the substrate 20 as it is to protect a wiring or the like (permanent mask). Resist).

  In the semiconductor device according to the present embodiment, other members (for example, the underfill 6, the sealing material 7, and the like) are formed on the insulating layer 3 described above. When the insulating layer 3 formed using the photosensitive resin composition is a solder resist, the semiconductor element 5 is flip-chip connected to the semiconductor element mounting substrate 50, and then the underfill 6 or the sealing is formed on the insulating layer 3. Although the stop material 7 is formed, both are excellent in adhesiveness with the insulating layer 3 by the effect of this embodiment.

  The semiconductor device according to the present embodiment is used by being mounted on an electronic device such as a personal computer, for example.

(Method for manufacturing semiconductor device)
One aspect of the method for manufacturing a semiconductor device according to this embodiment includes a step of forming the above-described insulating layer 3 on the substrate 20. Hereinafter, the case where the insulating layer 3 which has the recessed part 3a is formed using the photosensitive resin composition is demonstrated in detail using FIG.

As shown in FIG. 6, one aspect of the method for manufacturing a semiconductor device according to this embodiment includes a step of forming a photosensitive resin composition layer 10 containing a photosensitive resin composition on a substrate 20, and a photosensitive resin. The step of irradiating a predetermined portion of the composition layer 10 with actinic rays to form a photocured portion, and removing the region other than the photocured portion, the side opposite to the substrate 20 side of the photosensitive resin composition layer 10 A recess 3a having a maximum depth (H) of 0.1 μm or more is formed on at least a part of the surface of the substrate, and a recess 3a is formed in a region (region A) having an area of 0.16 mm ² including at least one recess 3a on the surface. And a step of forming so that the ratio R of the occupied area is 5% or more.

  In one aspect of the method for manufacturing a semiconductor device according to this embodiment, first, a photosensitive resin composition layer 10 containing a photosensitive resin composition is formed on a substrate 20 (FIG. 6A).

  The photosensitive resin composition may be in a liquid form or a film form. The film-like photosensitive resin composition is prepared, for example, by dissolving the photosensitive resin composition in a solvent to obtain a solution (coating liquid) having a solid content of about 30 to 70% by mass, and then applying the solution (coating liquid) on the support film. It can form by apply | coating to and drying.

  When forming the photosensitive resin composition layer 10 using a film-like photosensitive resin composition, for example, a photosensitive resin composition layer including a support film and a film-like photosensitive resin composition formed on the support film. 10 is used. The photosensitive element may have a protective film on the surface of the photosensitive resin composition layer 10 opposite to the support film. Specifically, the protective film is peeled from the photosensitive resin composition layer 10, and the exposed surface is adhered to the substrate 20 so as to cover the conductor layer 2 having the circuit pattern formed on the base material 1 by laminating or the like. By doing so, the photosensitive resin composition layer 10 can be formed on the substrate 20. From the viewpoint of improving the adhesion to the substrate 20 and improving the followability, a method of laminating under reduced pressure is also preferable.

  When the liquid photosensitive resin composition is used, the photosensitive resin composition is applied on the substrate 20 by a known method such as a screen printing method or a roll coater. Layer 10 can be formed.

  Next, if necessary, a removal step of removing the support film on the photosensitive resin composition layer 10 is performed, and a predetermined portion of the photosensitive resin composition layer 10 is irradiated with actinic rays, and the photosensitive resin composition of the irradiated portion is irradiated. An exposure process for photocuring the layer 10 is performed (FIG. 6B). As a method of irradiating actinic rays, a conventionally known method can be applied, but a method using mask data such as a direct drawing method or a projection exposure method, a negative mask so as not to directly contact the photosensitive resin composition layer. A method using the exposure mask 4 such as an exposure method to be arranged or a contact exposure method in which a negative mask is directly arranged can be suitably applied. As the exposure mask 4, a mask having a predetermined pattern may be used according to the shape, area, depth, etc. of the intended recess 3a. For example, a mask having a mask pattern in which dots having a predetermined diameter (X μm in the drawing) shown in FIG. 7 are arranged at a predetermined pitch (Y μm in the drawing) can be used.

  By adjusting the exposure amount, the opening 3b can be formed simultaneously with the formation of the recess 3a. Thereby, the process of conductor apparatus manufacture can be shortened and productivity can be improved. Moreover, in order to form the recessed part 3a and the opening part 3b, two-step exposure may be performed and exposure may be repeatedly performed in multiple times. Further, from the viewpoint of improving the throughput, exposure may be performed by changing the exposure amount for each area to be exposed, and exposure may be performed by changing the density of the exposure mask (via a gray mask), and has patterns of different diameters. You may expose through a mask.

The exposure step is preferably performed so that the area of the recess 3a obtained after the development step described later is 0.000015 to 0.0025 mm ² . By performing exposure so that the area of the recess 3a is 0.0025 mm ² or less, the surface of the substrate 20 (for example, the conductor layer 2 and the base material 1) is hardly exposed, and the formation of the recess 3a is facilitated. Further, by performing the exposure step so that the area of the concave portion 3a becomes 0.000015 mm ² or more, it becomes easy to obtain the concave portion 3a having a sufficient depth in the developing step.

  Next, when a support film is present on the photosensitive resin composition layer 10 after the exposure, the support is removed, and then the portion that has not been photocured by wet development or dry development (unexposed portion) By removing and developing, the recessed part 3a can be formed in the surface of the photosensitive resin composition layer 10 after exposure, and the insulating layer 3 which has the recessed part 3a can be obtained.

  In the case of the above-described wet development, as the developer, an alkaline aqueous solution, an organic solvent developer or the like that is safe and stable and has good operability is used according to the type of the photosensitive resin composition.

  Examples of the base of the alkaline aqueous solution include alkali metals such as lithium hydroxide, sodium hydroxide and potassium hydroxide which are hydroxides of lithium, sodium and potassium, carbonates or bicarbonates such as alkali metals and ammonium. Alkaline carbonate or bicarbonate, alkali metal phosphates such as sodium phosphate and potassium phosphate, alkali metal pyrophosphates such as sodium pyrophosphate and potassium pyrophosphate, borax, sodium metasilicate, water Tetramethylammonium oxide, ethanolamine, ethylenediamine, diethylenetriamine, 2-amino-2-hydroxymethyl-1,3-propanediol, 1,3-diaminopropanol-2, morpholine, etc. are safe and stable and have good operability Is used.

  Examples of the alkaline aqueous solution include a dilute solution of 0.1 to 5% by mass of sodium carbonate, a dilute solution of 0.1 to 5% by mass of potassium carbonate, and a dilute solution of 0.1 to 5% by mass of sodium hydroxide. A solution and a dilute solution of 0.1 to 5% by mass sodium tetraborate are preferred, and the pH is preferably in the range of 9 to 11. Moreover, the temperature of such alkaline aqueous solution is adjusted according to the developability of the photosensitive resin composition layer 10, and it is preferable to set it as 20-50 degreeC. Furthermore, a small amount of an organic solvent such as a surfactant or an antifoaming agent may be mixed in the alkaline aqueous solution in order to promote development.

  Examples of the organic solvent used in the organic solvent developer include acetone, ethyl acetate, alkoxyethanol having an alkoxy group having 1 to 4 carbon atoms, ethyl alcohol, isopropyl alcohol, butyl alcohol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether. And diethylene glycol monobutyl ether. The concentration of such an organic solvent is usually preferably 2 to 90% by mass. Moreover, the temperature of such an organic solvent can be adjusted according to developability. Such organic solvents can be used alone or in combination of two or more. Examples of the organic solvent developer used alone include 1,1,1-trichloroethane, N-methylpyrrolidone, N, N-dimethylformamide, cyclohexanone, methyl isobutyl ketone and γ-butyrolactone.

  As a developing method, known methods such as a dipping method, a paddle method, a spray method, a high-pressure spray method, rocking immersion, brushing, and slapping are appropriately employed. Among them, the high pressure spray method is most suitable for improving the resolution. In forming the concave portion 3a of the present embodiment, two or more kinds of development methods described above may be used in combination as necessary.

After completion of the development step, it is preferable to perform ultraviolet irradiation or heating with a high-pressure mercury lamp. Thereby, solder heat resistance, chemical resistance, etc. can be improved. Moreover, when the photosensitive resin composition contains an epoxy resin, the epoxy resin is cured by further providing a heating step after the step of removing the region other than the photocured portion, and the reliability as a semiconductor device Can be improved. When irradiating with ultraviolet rays, the irradiation amount can be adjusted as necessary. For example, irradiation can be performed at an irradiation amount of about 0.05 to 10 J / cm ² . Moreover, when heating the insulating layer 3 which has the recessed part 3a, it is preferable to carry out for about 15 to 90 minutes in the range of about 130-200 degreeC.

  Both ultraviolet irradiation and heating may be performed. In this case, both may be performed at the same time, and after either one is performed, the other may be performed. When performing ultraviolet irradiation and heating simultaneously, it is preferable to heat at 60-150 degreeC from a viewpoint of providing solder heat resistance and chemical resistance more favorably.

  The above is a detailed description regarding the formation of the insulating layer 3 using the photosensitive resin composition. As described above, depending on the application site of the present embodiment, a resin composition other than the photosensitive resin composition (for example, thermosetting). The insulating layer 3 may be formed using a functional resin composition and a thermoplastic resin composition. For example, when the insulating layer 3 is a build-up layer in a wiring board, a thermosetting resin composition is generally suitable, and a laser drill at the time of via formation may be applied to form a recess.

  As shown in FIGS. 2 and 5, when it is necessary to improve the adhesion only at a specific portion such as a peripheral portion of the semiconductor element, the entire surface of the insulating layer 3 is roughened by the conventional plasma processing method. Therefore, it is difficult to selectively perform the treatment, but according to the manufacturing method according to the present embodiment, the recess 3a can be formed at any position on the surface of the insulating layer 3 as necessary. It is possible to selectively process only the portions that require close adhesion. For this reason, the original smooth surface of the insulating layer can be maintained in places where adhesion is not required. Thereby, as compared with the case where a semiconductor device is manufactured by a conventional method using plasma treatment, absorption of extra moisture, flux and the like in the insulating layer 3 is suppressed, and a semiconductor device having excellent reliability can be manufactured. Further, according to the manufacturing method according to the present embodiment, as shown in FIG. 1, in the case of a semiconductor device using both the underfill 6 and the sealing material 7, the recess 3 a is formed on the entire surface of the insulating layer 3. Thus, the adhesion between the insulating layer 3 and the underfill 6 and the sealing material 7 can be improved.

  The semiconductor device and the method for manufacturing the semiconductor device according to the present embodiment have been described above. However, the present disclosure is not necessarily limited to the above-described embodiment, and may be changed as appropriate without departing from the scope of the present disclosure. May be performed.

  Hereinafter, the objects and advantages of the present disclosure will be described in more detail by way of examples, but the present disclosure is not limited to these examples. That is, the specific materials listed in these examples, their amounts, and other conditions and details should not be construed to unduly limit this disclosure.

Example 1
<Preparation of photosensitive resin composition solution>
First, the photosensitive resin composition solution was obtained by mixing the following components with the following compounding amounts (parts by mass).

  As a photosensitive prepolymer having at least one ethylenically unsaturated group and a carboxyl group in the molecule, 85 parts by mass of acid-modified cresol novolac-type epoxy acrylate “EXP-2810” (trade name, manufactured by DIC Corporation) was used. The weight average molecular weight was 10,000 and the acid value was 70 mgKOH / g.

  As a photoreactive compound, 15 parts by mass of dipentaerythritol pentaacrylate and dipentaerythritol hexaacrylate mixture “KAYARAD DPHA” (trade name, manufactured by Nippon Kayaku Co., Ltd.) was used.

  As a photopolymerization initiator, 3,4 parts of 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide “DAROCURE-TPO” (trade name, manufactured by BASF), 2,4-diethylthioxanthone “Kayacure DETX-S” (Nippon Kayaku Co., Ltd., trade name) 0.3 parts by mass was used.

  As an epoxy resin, NC-3000H (trade name, manufactured by Nippon Kayaku Co., Ltd.) which is a biphenyl aralkyl type epoxy resin, and YSLV-80 (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) which is a bisphenol F type epoxy resin 20 parts by mass was used.

  As the inorganic filler, 30 parts by mass of B30 (trade name, manufactured by Sakai Chemical Industry Co., Ltd.), which is barium sulfate, and 50 parts by mass of MEK slurry (1), which is silica (sample name), are used. The average particle size and the maximum particle size of the inorganic filler dispersed in the photosensitive resin composition were measured using a laser diffraction scattering type microtrack particle size distribution meter “MT-3100” (manufactured by Nikkiso Co., Ltd.). The average particle size of B30 was 0.3 μm, and the average particle size of MEK slurry (1) was 0.5 μm. The maximum particle size of the inorganic filler containing B30 and MEK slurry was 3 μm or less. The particle size of the inorganic filler after film formation was confirmed by observing the cross section with an electron microscope (SEM) after curing the film. It was confirmed that the maximum particle size of the inorganic filler dispersed in the film was 5 μm or less.

  The following were used as other components. 3 parts by mass of epoxide PB3600 (trade name, manufactured by Daicel Chemical Industries, Ltd.), which is a butadiene elastomer, 0.5 part by mass of Antage 500 (trade name, manufactured by Kawaguchi Chemical Industries, Ltd.) as a polymerization inhibitor, and a curing accelerator and adhesion As a property improver, 2 parts by mass of melamine and 1 part by mass of dicyandiamide and 1.2 parts by mass of phthalocyanine blue as a pigment were used. As the solvent, methyl ethyl ketone and propylene glycol monomethyl ether acetate were used.

<Production of film-like photosensitive resin composition>
The above photosensitive resin composition solution is uniformly coated on a polyethylene terephthalate film, which is a support film, to form a photosensitive resin composition layer, which is about 10 at 100 ° C. using a hot air convection dryer. Dried for minutes. The film thickness after drying of the photosensitive resin composition layer was 15 μm. Subsequently, a biaxially stretched polypropylene film (MA-411, manufactured by Oji Specialty Paper Co., Ltd., trade name) is applied as a protective film on the surface of the photosensitive resin composition layer opposite to the side in contact with the support film. In addition, a photosensitive element provided with the film-like photosensitive resin composition was obtained.

<Preparation of substrate>
A double-sided copper-clad laminate (MCL-E-679, manufactured by Hitachi Chemical Co., Ltd., trade name) having copper foil on both sides of the core base material was prepared as a substrate. At this time, a core substrate having a thickness of 1.0 mm was used. The copper foil having a thickness of 18 μm on both sides was used. The size of the substrate was 1 cm × 1 cm.

<Formation of photosensitive resin composition layer>
The photosensitive resin composition layer was formed on the board | substrate using the obtained film-form photosensitive resin composition. Specifically, first, only the protective film of the photosensitive element is peeled off, and the film-like photosensitive resin composition is applied to one surface of the substrate using a press-type vacuum laminator (MVLP-500, product name, manufactured by Meiki Seisakusho). Lamination was performed to form a photosensitive resin composition layer on the substrate. The press conditions were as follows: hot plate temperature of 80 ° C., evacuation time of 20 seconds, laminating press time of 30 seconds, atmospheric pressure of 4 kPa or less, and pressing pressure of 0.4 MPa.

<Formation of insulating layer>
The photosensitive resin composition layer thus obtained was exposed with an energy amount of 200 mJ / cm ² using an EXM-1201 type exposure machine manufactured by Oak Manufacturing Co., Ltd. For the exposure, an exposure mask having a mask pattern in which dots having a predetermined diameter (X μm in the drawing) shown in FIG. 7 are arranged at a predetermined pitch (Y μm in the drawing) was used. More specifically, an exposure mask having a mask pattern in which dots having a diameter of 40 μm are arranged at a pitch of 80 μm in a range of 5 mm × 5 mm was used.

  Subsequently, after leaving still at room temperature for 1 hour, the polyethylene terephthalate film (support film) on the photosensitive resin composition layer after exposure was peeled. Next, the exposed photosensitive resin composition layer is spray-developed with a 1% by mass aqueous sodium carbonate solution at 30 ° C. for 90 seconds, and a plurality of recesses are formed on the surface of the exposed photosensitive resin composition layer opposite to the substrate side. Formed. Subsequently, UV irradiation is performed with a predetermined energy amount using an ultraviolet irradiation device manufactured by Oak Manufacturing Co., Ltd., and heat curing is performed in a clean oven at a predetermined temperature and for a predetermined time, thereby forming a plurality of recesses on the surface opposite to the substrate side. The laminated body provided with the insulating layer used is obtained.

(Example 2)
Except that an exposure mask having a mask pattern in which dots having a diameter of 50 μm are arranged at a pitch of 100 μm in a range of 5 mm × 5 mm was used in the exposure in the insulating layer forming step, the same as in Example 1. A laminate having an insulating layer having a plurality of recesses formed on the surface opposite to the substrate side was obtained.

[Evaluation of concave shape]
About Example 1 and 2, the recessed part shape was evaluated. Specifically, using an optical interference type non-contact surface shape measuring device Vertscan 2.0 (manufactured by Ryoka Systems Co., Ltd.), any 10 locations in the region where the recesses are formed on the surface of the insulating layer, Measurement was performed within a range of 400 μm × 400 μm (area 0.16 mm ² ) including at least one recess, and the maximum depth (H) and area of the recess were measured. Here, the number of recesses included in the range of 400 μm × 400 μm was 9 to 16. Further, from the relationship between the area of the measurement range and the total value of the areas of the recesses formed in the measurement range, the ratio r of the area occupied by the recesses in the measurement range is calculated, and the average value of the ratios r at each measurement location (each measurement The sum of the ratios r at the locations divided by 10) was calculated as the ratio R of the area occupied by the recesses in the area A (area having an area of 0.16 mm ² including at least one recess). The results are shown in Table 1. As a result of the measurement, the area of the recesses is in the range of 0.000015～0.0025Mm ² was confirmed. In addition, the area of the recessed part was made into the area of the range whose maximum depth (H) is 0.1 micrometer-10 micrometers. Moreover, the maximum depth (H) of the concave portion was an average value of the measured values at any 10 measured locations.

(Comparative Example 1)
In the exposure in the step of forming the insulating layer, a laminate including an insulating layer on a substrate is obtained in the same manner as in Example 1 except that the entire surface of the photosensitive resin composition layer is exposed without using an exposure mask. It was.

(Reference Example 1)
Using the barrel type plasma apparatus (PB-1000S, manufactured by Mori Engineering Co., Ltd.), surface treatment is performed on the insulating layer of the laminate obtained in Comparative Example 1 under conditions of 300 W for 3 minutes, and plasma treatment is performed on the substrate. The laminated body provided with the insulating layer made was obtained. In the surface treatment, oxygen was used as a gas. In addition, similarly to Example 1 and 2, the recessed part shape of the obtained laminated body was evaluated, and the ratio R of the area occupied by the recessed part having the maximum depth (H) of 0.1 μm or more in the region A was 5 % Was confirmed.

[Evaluation of adhesion to sealing material]
The adhesion in the insulating layers of Examples 1 and 2, Comparative Example 1 and Reference Example 1 was evaluated by the following method.

  A laminated body is placed on a hot plate heated to 180 ° C., and a silicon rubber (thickness 1 mm, size 7 mm × 7 mm) having a hole with a diameter of 3 mm is formed on the laminated body. It was placed and brought into close contact with the center of the formed area. Next, an appropriate amount of a sealing material CEL-C-9700 series (trade name, manufactured by Hitachi Chemical Co., Ltd.) was put into the hole of the silicon rubber, and when it became liquid, it was stirred and heated and cured for 15 minutes. Thereafter, the silicon rubber was removed, and a test sample for evaluating sealing material adhesion in which the sealing material was formed in a cylindrical pillar shape having a diameter of 3 mm and a height of 1 mm was obtained.

  Using a bond tester (Dage 4000, manufactured by Dage), the cylindrical pillar of the above test sample was measured for breaking strength when it was shear broken at a measurement height of 50 μm, a measurement speed of 50 μm / second, and room temperature. The adhesion strength per unit area was calculated from the obtained fracture strength. The evaluation results are shown in Table 1.

  As shown in Table 1, in Examples 1 and 2, a recess having a maximum depth (H) of 2 to 5 μm could be formed by setting the pattern diameter to 40 to 50 μm. In the adhesion evaluation, the insulating layers of Examples 1 and 2 showed higher adhesion compared to Comparative Example 1 in which no recess was formed, and the insulating layer was formed by the manufacturing method of Examples 1 and 2. By forming, it was confirmed that the adhesion was improved to the same extent as in Reference Example 1 where the plasma treatment was performed.

DESCRIPTION OF SYMBOLS 1 ... Base material, 2 ... Conductor layer, 3 ... Insulating layer, 3a ... Recessed part, 3b ... Opening part, 4 ... Exposure mask, 5 ... Semiconductor element, 6 ... Underfill, 7 ... Sealing material, 8 ... Measurement range DESCRIPTION OF SYMBOLS, 9 ... Connection bump, 10 ... Photosensitive resin composition layer, 20 ... Board | substrate, 50 ... Semiconductor device mounting substrate, H ... Depth of a recessed part.

Claims (8)

A substrate and an insulating layer provided on the substrate;
A recess having a maximum depth of 0.1 μm or more is formed on at least a part of the surface of the insulating layer opposite to the substrate side,
A semiconductor device in which, in a region having an area of 0.16 mm ² including at least one of the concave portions on the surface, the proportion of the area occupied by the concave portions is 5% or more. In the region, the plurality of recesses are formed discontinuously with each other,
The semiconductor device according to claim 1, wherein an area of at least one of the plurality of recesses is 0.000015 to 0.0025 mm ² .   The semiconductor device according to claim 1, wherein the insulating layer is formed using a photosensitive resin composition.   The semiconductor device according to claim 3, wherein the photosensitive resin composition contains a photoreactive compound having a (meth) acryloyl group.   The semiconductor device according to claim 3 or 4, wherein the photosensitive resin composition contains an acylphosphine compound.   The semiconductor device according to claim 1, wherein the insulating layer is a solder resist. It is a manufacturing method of the semiconductor device according to any one of claims 1 to 6,
A method of manufacturing a semiconductor device comprising a step of forming the insulating layer on the substrate. It is a manufacturing method of the semiconductor device according to any one of claims 1 to 6,
Forming a photosensitive resin composition layer containing a photosensitive resin composition on the substrate;
Irradiating a predetermined portion of the photosensitive resin composition layer with actinic rays to form a photocured portion; and
By removing a region other than the photocured portion, a recess having a maximum depth of 0.1 μm or more is formed on at least a part of the surface of the photosensitive resin composition layer opposite to the substrate side. Forming a ratio of the area occupied by the recesses to be 5% or more in a region having an area of 0.16 mm ² including at least one recess on the surface.

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