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JP2016100484A - Semiconductor element container for storing semiconductor element - Google Patents

Semiconductor element container for storing semiconductor element Download PDF

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Publication number
JP2016100484A
JP2016100484A JP2014237033A JP2014237033A JP2016100484A JP 2016100484 A JP2016100484 A JP 2016100484A JP 2014237033 A JP2014237033 A JP 2014237033A JP 2014237033 A JP2014237033 A JP 2014237033A JP 2016100484 A JP2016100484 A JP 2016100484A
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container
semiconductor element
lid
side wall
ceramic
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剛 後島
Takeshi Goshima
剛 後島
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GOTO SEIKO KK
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GOTO SEIKO KK
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Abstract

PURPOSE: To provide a micro semiconductor element container suitable for storing a micro semiconductor element; further provide a semiconductor element container which prevents a joining material from protruding when a lid body is joined to a container body by using the joining material even in the case where a side wall of the container body of the semiconductor element container is extremely thin.SOLUTION: A semiconductor element container of one embodiment comprises: a container body 1 which is a metal container body 1 formed in a trough shape with a square opening in plan view and has a flange part projecting toward an outer periphery side in a horizontal direction from a top part of a side wall 1c of the container body, and in which a groove 1e which circles around along a top face of the flange part and along a top face of the side wall is formed; and a lid body 2 which has a semiconductor 3 attached to a rear face of the lid body and which is formed by a material consisting primarily of a ceramic material or ceramic.SELECTED DRAWING: Figure 1

Description

本発明は、半導体素子を収容するための容器に関し、詳しくは、極小の半導体素子を収容するための半導体素子用容器に関する。   The present invention relates to a container for housing a semiconductor element, and more particularly to a container for a semiconductor element for housing a very small semiconductor element.

従来、極小の半導体素子を収容する半導体素子用容器は、半導体素子が取り付けられた容体と、この容体を封止するように形成された蓋である蓋体と、から構成されており、容体の底に半導体素子が取り付けられた後、ろう付け等により蓋体が接合されていた。   2. Description of the Related Art Conventionally, a container for a semiconductor element that accommodates an extremely small semiconductor element is composed of a container to which the semiconductor element is attached and a lid that is a lid formed so as to seal the container. After the semiconductor element was attached to the bottom, the lid was joined by brazing or the like.

つまり、従来品の半導体素子用容器は、槽状のセラミック製の容体に半導体素子を納め、これに金属等から形成された蓋をすることにより形成されていた。   That is, the conventional semiconductor element container is formed by placing a semiconductor element in a tank-shaped ceramic container and covering it with a lid made of metal or the like.

ところで近年、半導体素子はサブミリサイズ或いはサブミクロンサイズまで小型化されており、そのような極小の半導体素子を収容するのに適切な極小の半導体素子用容器があることが望ましい。しかし、従来品のように半導体素子用容器の容体がセラミック製であると、これを極小の寸法に成形することが難しく、特には、セラミック製の容体の側壁を薄くつくることが難しいために、極小の半導体に見合った極小の半導体素子用容器を提供できなかった。   By the way, in recent years, semiconductor elements have been miniaturized to sub-millimeter size or sub-micron size, and it is desirable to have a very small semiconductor element container suitable for accommodating such a small semiconductor element. However, if the container of the semiconductor element container is made of ceramic as in the conventional product, it is difficult to mold it to a minimum size, especially because it is difficult to make the side wall of the ceramic container thin, It has not been possible to provide a container for a semiconductor device that is suitable for a semiconductor of a minimum size.

また、極小の半導体素子用容器をつくれたとしても、その極小の半導体素子用容器の容体と蓋体とを接合剤を使って接合する際に、容体の薄い側壁の天部に塗布された接合剤がはみ出てしまうと(ダレの発生)、その半導体素子用容器が実装された電子基板が故障する原因となる恐れがあった。   In addition, even if an extremely small semiconductor element container can be made, when the container of the extremely small semiconductor element container and the lid are bonded using a bonding agent, the bonding applied to the top of the thin side wall of the container If the agent protrudes (sagging), the electronic substrate on which the semiconductor element container is mounted may be damaged.

特開平06−151628号公報Japanese Patent Laid-Open No. 06-151628

本発明は、極小の半導体素子を収容するのに適した極小の半導体素子用容器を提供することを目的とする。さらには、極小の寸法の半導体素子用容器の容体の側壁が極めて薄い場合にも、接合剤を使って容体に蓋体を接合する際に、側壁の天部に塗布された接合剤がはみ出ることがない半導体素子用容器を提供することを目的とする。   An object of the present invention is to provide a container for a minimal semiconductor element suitable for accommodating a minimal semiconductor element. Furthermore, even when the side wall of the container of the semiconductor device container of extremely small dimensions is extremely thin, the bonding agent applied to the top of the side wall protrudes when the lid is bonded to the container using the bonding agent. An object of the present invention is to provide a container for a semiconductor device that does not have any.

従来の半導体素子用容器は一般に、半導体素子が納められたセラミック製の容体と、金属製の蓋体とから構成されていた。これに対して、本発明の半導体素子用容器は、比較的成形し易い金属製の容体と、セラミック材料もしくはセラミックを主成分とする材料から形成された蓋体と、からなる点で、従来品とは基本的な構成が異なる。   Conventional semiconductor element containers are generally composed of a ceramic container in which a semiconductor element is accommodated and a metal lid. On the other hand, the container for a semiconductor device of the present invention is a conventional product in that it comprises a metal container that is relatively easy to mold and a lid formed from a ceramic material or a material mainly composed of ceramic. The basic configuration is different.

一態様においては、本発明の半導体素子用容器は、平面視で四角形の開口を有する槽状の形状に形成された金属(例えば鉄)製の容体であって、該容体の側壁の上面に沿って周回する溝が形成された容体と、蓋体であって、該蓋体の裏面に半導体素子が取り付けられていて、セラミック材料もしくはセラミックを主成分とする材料から形成された蓋体と、からなる。   In one aspect, the container for a semiconductor device of the present invention is a container made of metal (for example, iron) formed in a tank shape having a square opening in plan view, and is along the upper surface of the side wall of the container. And a lid formed of a ceramic material or a ceramic-based material with a semiconductor element attached to the back surface of the lid. Become.

他の態様においては、本発明の半導体素子用容器は、平面視で四角形の開口を有する槽状の形状に形成された金属製の容体であって、該容体の側壁の天部から水平方向外周側へ突出した鍔部を有し、この鍔部の上面ないし側壁の上面に沿って周回する溝が形成された容体と、容体の開口を閉塞するための蓋体であって、該蓋体の裏面に半導体素子が取り付けられていて、セラミック材料もしくはセラミックを主成分とする材料から形成された蓋体と、からなる。なお、本明細書中における「鍔部の上面ないし側壁の上面に沿って周回する溝」とは、側壁の天部から水平方向外周側へ突出した鍔部の上面または側壁の上面に沿って周回する溝だけでなく、鍔部の上面と側壁の上面との境界線上に形成された溝を含むものとする。また、本明細書中における「主成分」とは、材料の成分として50%以上含有していることを意味する。   In another aspect, the container for a semiconductor device of the present invention is a metal container formed in a tank shape having a square opening in a plan view, and the outer periphery in the horizontal direction from the top of the side wall of the container A container having a flange projecting to the side, and having a groove formed around the upper surface of the flange or the upper surface of the side wall, and a lid for closing the opening of the container, A semiconductor element is attached to the back surface, and the lid is formed of a ceramic material or a material mainly composed of ceramic. In this specification, the “groove that circulates along the upper surface of the flange or the upper surface of the sidewall” refers to the upper surface of the flange or the upper surface of the sidewall that protrudes from the top of the sidewall toward the outer periphery in the horizontal direction. In addition to a groove to be formed, a groove formed on a boundary line between the upper surface of the flange portion and the upper surface of the side wall is included. Further, the “main component” in the present specification means containing 50% or more as a component of the material.

さらに他の態様においては、本発明の半導体素子用容器は、平面視で四角形の開口を有する槽状の形状に形成された金属製の容体であって、該容体の側壁の天部よりも低い位置から水平方向外周側へ突出した鍔部を有する容体と、蓋体であって、該蓋体の裏面に半導体素子が取り付けられていて、セラミック材料もしくはセラミックを主成分とする材料から形成された蓋体と、からなる。   In still another aspect, the container for a semiconductor element of the present invention is a metal container formed in a tank shape having a square opening in plan view, and is lower than the top of the side wall of the container A container having a flange projecting from the position to the outer peripheral side in the horizontal direction, and a lid, the semiconductor element being attached to the back surface of the lid, formed from a ceramic material or a material mainly composed of ceramic And a lid.

本発明においては、セラミック材料もしくはセラミックを主成分とする材料から形成された蓋体の裏面に半導体素子が取り付けられる。また、従来はセラミック製であった容体を金属製とすることで、容体の側壁を薄く形成することが可能となるので、極小の半導体素子を収容するのに相応しい極小の半導体素子用容器を提供することができる。一例においては、本発明の半導体素子用容器における容体は、平面視で開口が1mm×1.5mmの縦横の寸法を有する。他の例においては、本発明の半導体素子用容器における容体は、平面視で開口が1mm×1.5mmよりも若干大きい縦横の寸法(例えば、2mm×2mm)或いは若干小さい縦横の寸法(例えば、1mm×1.2mm)を有する。さらには、当技術分野において半導体素子の小型化が進められていることに伴い、サブミリサイズの縦横の寸法にまで小型化(ダウンサイジング)される可能性もある。   In the present invention, a semiconductor element is attached to the back surface of a lid formed of a ceramic material or a material containing ceramic as a main component. In addition, since the container made of ceramic in the past can be made of metal, the side wall of the container can be made thin, so that there is provided a container for a semiconductor element that is suitable for accommodating a semiconductor element. can do. In one example, the container in the container for a semiconductor element of the present invention has vertical and horizontal dimensions with an opening of 1 mm × 1.5 mm in plan view. In another example, the container in the container for a semiconductor device of the present invention has a vertical and horizontal dimension slightly larger than 1 mm × 1.5 mm (for example, 2 mm × 2 mm) or a slightly smaller vertical and horizontal dimension (for example, 1 mm × 1.2 mm). Furthermore, as semiconductor devices are being miniaturized in this technical field, there is a possibility that the size will be reduced (downsized) to the vertical and horizontal dimensions of a submillimeter size.

本発明の半導体素子用容器の一例を示す斜視図。The perspective view which shows an example of the container for semiconductor elements of this invention. 図1に示される半導体素子用容器の断面図。Sectional drawing of the container for semiconductor elements shown by FIG. 本発明の半導体素子用容器の他の実施例を示す断面図。Sectional drawing which shows the other Example of the container for semiconductor elements of this invention. 容体と蓋体とが接合された状態を示す断面図。Sectional drawing which shows the state with which the container and the cover body were joined. 容体と、半導体素子が取り付けられた蓋体とを示す断面図。Sectional drawing which shows a container and the cover body to which the semiconductor element was attached. 容体と蓋体とが接合された状態を示す断面図。Sectional drawing which shows the state with which the container and the cover body were joined. 本発明の半導体素子用容器のさらに他の実施例を示す断面図。Sectional drawing which shows the further another Example of the container for semiconductor elements of this invention.

本発明の半導体素子用容器について、添付の図面を参照しながら以下に詳細に説明する。   The container for a semiconductor device of the present invention will be described in detail below with reference to the accompanying drawings.

図1は、半導体素子用容器の一実施例を示す。本発明の半導体用素子用容器は、金属材料から形成された容体1と、セラミック材料もしくはセラミックを主成分とする材料から形成された蓋体2と、からなる。   FIG. 1 shows one embodiment of a container for a semiconductor element. The container for a semiconductor element of the present invention comprises a container 1 formed from a metal material and a lid 2 formed from a ceramic material or a material containing ceramic as a main component.

金属製の容体1は、平面視で四角形の開口1bを有する槽状の形状に形成されていて、内底1aと側壁1cを有する。一実施例においては、図3に示されるように、容体1の側壁の上面に沿って周回する溝1eが周知の種々の技術(レーザ加工技術を含むこともある)によって形成され得る。他の実施例においては、容体1の側壁1cの天部から水平方向外周側へ突出した鍔部1dが形成されていて、この鍔部1dの上面ないし側壁1cの上面に沿って周回するように溝1eが形成されている。   The metal container 1 is formed in a tank shape having a square opening 1b in a plan view, and has an inner bottom 1a and a side wall 1c. In one embodiment, as shown in FIG. 3, the groove 1 e that circulates along the upper surface of the side wall of the container 1 can be formed by various known techniques (which may include laser processing techniques). In another embodiment, a flange 1d that protrudes from the top of the side wall 1c of the container 1 to the outer peripheral side in the horizontal direction is formed, and circulates along the upper surface of the flange 1d or the upper surface of the sidewall 1c. A groove 1e is formed.

蓋体2は、容体1の溝1e全体を覆うように容体1に被せられて容体1と接合される。容器の容体と蓋体との接合について説明すると、容体の側壁の上面に沿って周回するように形成された溝に、金−錫合金ペースト(接合剤)が塗布され、該容体に蓋体が接合される。容体の側壁の上面に形成された溝に塗布された金−錫合金ペーストを使って接合されるので、容体と蓋体とが接合される際に接合剤がはみ出てしまうことがなく、振動や衝撃に対して耐性の高い強固な接合を実現することができる。   The lid 2 is put on the container 1 so as to cover the entire groove 1e of the container 1, and is joined to the container 1. The bonding between the container body and the lid will be described. A gold-tin alloy paste (bonding agent) is applied to a groove formed so as to circulate along the upper surface of the side wall of the container, and the lid is attached to the container. Be joined. Since bonding is performed using a gold-tin alloy paste applied to a groove formed on the upper surface of the side wall of the container, the bonding agent does not protrude when the container and the lid are bonded. It is possible to realize a strong joint that is highly resistant to impact.

図2は、図1に示した半導体素子用容器の断面図である。この実施例においては、容体1の鍔部1dの上面ないし側壁1cの上面に沿って溝1eが形成されている。なお、図2においては、半円形(U字形)の断面形状を有する溝1eが示されているが、楔形(V字形)の断面形状などの他の断面形状を有する溝が採用される場合もある。   2 is a cross-sectional view of the semiconductor element container shown in FIG. In this embodiment, a groove 1e is formed along the upper surface of the flange 1d of the container 1 or the upper surface of the side wall 1c. In FIG. 2, the groove 1e having a semicircular (U-shaped) cross-sectional shape is shown, but a groove having another cross-sectional shape such as a wedge-shaped (V-shaped) cross-sectional shape may be employed. is there.

図3は、他の実施例の半導体素子用容器における容体1と蓋体2の断面図である。容体1の側壁1cの上面に沿って、周回する溝1eが形成されている。   FIG. 3 is a cross-sectional view of the container 1 and the lid 2 in the semiconductor element container of another embodiment. A circulating groove 1e is formed along the upper surface of the side wall 1c of the container 1.

図4に示されるように、半導体素子用容器の容体1の溝1eに塗布された接合剤4を使って該容体1に蓋体2が接合されることで、該半導体素子用容器内が密封される。   As shown in FIG. 4, the lid 2 is bonded to the container 1 using the bonding agent 4 applied to the groove 1e of the container 1 of the semiconductor element container, so that the inside of the semiconductor element container is sealed. Is done.

図5は、図1および図2に示した実施例の半導体素子用容器における容体1と、半導体素子3が取り付けられた蓋体2と、を示す断面図である。半導体素子3は、当技術分野で周知の接着技術を用いて蓋体2の裏面2aに取り付けられている。   FIG. 5 is a cross-sectional view showing the container 1 in the semiconductor element container of the embodiment shown in FIGS. 1 and 2 and the lid 2 to which the semiconductor element 3 is attached. The semiconductor element 3 is attached to the back surface 2a of the lid 2 using an adhesion technique well known in the art.

図6に示されるように、半導体素子3が取り付けられた蓋体2は、容体1の溝1eに塗布された接合剤4を使って容体2に接合される。溝1eに接合剤4が塗布された後、真空雰囲気において半導体素子用容器の容体1と蓋体2とが接合されると、該半導体素子用容器内が密封される。接合剤4としては、金−錫合金ペーストが使用されることが望ましいが、銀ペースト(銀ろう)、低融点ガラスまたは半田等の他の適切な接合剤が使用される場合もある。   As shown in FIG. 6, the lid 2 to which the semiconductor element 3 is attached is bonded to the container 2 using a bonding agent 4 applied to the groove 1 e of the container 1. After the bonding agent 4 is applied to the groove 1e, when the container 1 and the lid 2 of the semiconductor element container are bonded in a vacuum atmosphere, the inside of the semiconductor element container is sealed. As the bonding agent 4, a gold-tin alloy paste is preferably used, but other appropriate bonding agents such as silver paste (silver brazing), low-melting glass, or solder may be used.

図7(a)および図7(b)は、本発明のさらに他の実施例の半導体素子用容器における容体1と蓋体2の断面図である。この実施例においては、半導体素子用容器の容体1の側壁1cの天部の高さから水平方向外周側へ鍔部が突出しているのではなく、容体1の側壁1cの天部よりも低い位置から水平方向外周側へ鍔部1dが突出していて、この鍔部1dの上面に接合剤4が塗布される。図示されているように、接合剤4が塗布されるべき面と蓋体2との間に隙間が存在するので、容体1と蓋体2とを接合する際に、接合剤4を塗り過ぎないようにすれば、接合剤4が外周側へはみ出てしまうことがない。   FIGS. 7A and 7B are cross-sectional views of the container 1 and the lid 2 in the container for a semiconductor element of still another embodiment of the present invention. In this embodiment, the flange is not projected from the height of the top of the side wall 1c of the container 1 of the container for semiconductor elements to the outer peripheral side in the horizontal direction, but is lower than the top of the side wall 1c of the container 1. 1d protrudes from the horizontal direction to the outer peripheral side in the horizontal direction, and the bonding agent 4 is applied to the upper surface of the flange 1d. As shown in the drawing, since there is a gap between the surface to which the bonding agent 4 is to be applied and the lid body 2, when bonding the container 1 and the lid body 2, the bonding agent 4 is not applied too much. By doing so, the bonding agent 4 does not protrude to the outer peripheral side.

1…容体
1a…内底
1b…開口
1c…側壁
1d…鍔部
1e…溝
2…蓋体
2a…裏面
3…半導体素子
4…接合剤
DESCRIPTION OF SYMBOLS 1 ... Container 1a ... Inner bottom 1b ... Opening 1c ... Side wall 1d ... Gutter 1e ... Groove 2 ... Lid 2a ... Back surface 3 ... Semiconductor element 4 ... Bonding agent

Claims (4)

平面視で四角形の開口を有する槽状の形状に形成された金属製の容体であって、該容体の側壁の上面に沿って周回する溝が形成された容体と、
蓋体であって、該蓋体の裏面に半導体素子が取り付けられていて、セラミック材料もしくはセラミックを主成分とする材料から形成された蓋体と、
からなる、半導体素子を収容するための半導体素子用容器。
A metal container formed in a tank-like shape having a square opening in plan view, and a container formed with a groove that circulates along the upper surface of the side wall of the container;
A lid having a semiconductor element attached to the back surface of the lid and formed from a ceramic material or a material mainly composed of ceramic; and
A container for a semiconductor element for containing a semiconductor element.
平面視で四角形の開口を有する槽状の形状に形成された金属製の容体であって、該容体の側壁の天部から水平方向外周側へ突出した鍔部を有し、この鍔部の上面ないし上記側壁の上面に沿って周回する溝が形成された容体と、
蓋体であって、該蓋体の裏面に半導体素子が取り付けられていて、セラミック材料もしくはセラミックを主成分とする材料から形成された蓋体と、
からなる、半導体素子を収容するための半導体素子用容器。
A metal container formed in a tank shape having a quadrangular opening in plan view, and having a flange protruding from the top of the side wall of the container toward the outer peripheral side in the horizontal direction, and an upper surface of the flange Or a container having a groove formed around the upper surface of the side wall;
A lid having a semiconductor element attached to the back surface of the lid and formed from a ceramic material or a material mainly composed of ceramic; and
A container for a semiconductor element for containing a semiconductor element.
上記溝に塗布された接合剤を使って上記容体に上記蓋体が接合されていることを特徴とする請求項1または請求項2に記載の半導体素子を収容するための半導体素子用容器。   The container for a semiconductor element for housing a semiconductor element according to claim 1 or 2, wherein the lid is bonded to the container using a bonding agent applied to the groove. 平面視で四角形の開口を有する槽状の形状に形成された金属製の容体であって、該容体の側壁の天部よりも低い位置から水平方向外周側へ突出した鍔部を有する容体と、
蓋体であって、該蓋体の裏面に半導体素子が取り付けられていて、セラミック材料もしくはセラミックを主成分とする材料から形成された蓋体と、
からなる、半導体素子を収容するための半導体素子用容器。
A metal container formed in a tank shape having a square opening in plan view, the container having a flange projecting from the position lower than the top of the side wall of the container to the outer peripheral side in the horizontal direction;
A lid having a semiconductor element attached to the back surface of the lid and formed from a ceramic material or a material mainly composed of ceramic; and
A container for a semiconductor element for containing a semiconductor element.
JP2014237033A 2014-11-21 2014-11-21 Semiconductor element container for storing semiconductor element Pending JP2016100484A (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237949A (en) * 1985-08-12 1987-02-18 Matsushita Electronics Corp Electronic-part mounting package
JPS63151053A (en) * 1986-12-16 1988-06-23 Mitsubishi Electric Corp Semiconductor device
JPH08227946A (en) * 1995-02-21 1996-09-03 Nec Yamagata Ltd Hermetic sealing method for package
JP2004064013A (en) * 2002-07-31 2004-02-26 Kinseki Ltd Cap sealing method for package for electronic parts
JP2013515247A (en) * 2009-12-21 2013-05-02 マイクロ−エプシロン・メステヒニク・ゲーエムベーハー・ウント・コンパニー・カー・ゲー Sensor
JP2014072346A (en) * 2012-09-28 2014-04-21 Nec Corp Hollow sealing structure and manufacturing method of the same
JP2014165305A (en) * 2013-02-25 2014-09-08 Kyocera Crystal Device Corp Electronic device, glass sealing method of the same, and lid member for the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237949A (en) * 1985-08-12 1987-02-18 Matsushita Electronics Corp Electronic-part mounting package
JPS63151053A (en) * 1986-12-16 1988-06-23 Mitsubishi Electric Corp Semiconductor device
JPH08227946A (en) * 1995-02-21 1996-09-03 Nec Yamagata Ltd Hermetic sealing method for package
JP2004064013A (en) * 2002-07-31 2004-02-26 Kinseki Ltd Cap sealing method for package for electronic parts
JP2013515247A (en) * 2009-12-21 2013-05-02 マイクロ−エプシロン・メステヒニク・ゲーエムベーハー・ウント・コンパニー・カー・ゲー Sensor
JP2014072346A (en) * 2012-09-28 2014-04-21 Nec Corp Hollow sealing structure and manufacturing method of the same
JP2014165305A (en) * 2013-02-25 2014-09-08 Kyocera Crystal Device Corp Electronic device, glass sealing method of the same, and lid member for the same

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