JP2016089002A - Monomer and polymer having benzofuranothiophene skeleton, and organic thin-film solar cell material using the polymer - Google Patents
Monomer and polymer having benzofuranothiophene skeleton, and organic thin-film solar cell material using the polymer Download PDFInfo
- Publication number
- JP2016089002A JP2016089002A JP2014223712A JP2014223712A JP2016089002A JP 2016089002 A JP2016089002 A JP 2016089002A JP 2014223712 A JP2014223712 A JP 2014223712A JP 2014223712 A JP2014223712 A JP 2014223712A JP 2016089002 A JP2016089002 A JP 2016089002A
- Authority
- JP
- Japan
- Prior art keywords
- group
- carbon atoms
- independently
- substituted
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 71
- 239000000463 material Substances 0.000 title claims abstract description 51
- 239000010409 thin film Substances 0.000 title claims abstract description 48
- 239000000178 monomer Substances 0.000 title claims description 51
- ZXVFTTRBWPOSLL-UHFFFAOYSA-N thieno[3,2-b][1]benzofuran Chemical group O1C2=CC=CC=C2C2=C1C=CS2 ZXVFTTRBWPOSLL-UHFFFAOYSA-N 0.000 title description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 153
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 69
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 23
- 125000001072 heteroaryl group Chemical group 0.000 claims description 31
- 125000003342 alkenyl group Chemical group 0.000 claims description 27
- 125000000304 alkynyl group Chemical group 0.000 claims description 26
- 125000003545 alkoxy group Chemical group 0.000 claims description 23
- 125000004434 sulfur atom Chemical group 0.000 claims description 23
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 20
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 19
- 125000003118 aryl group Chemical group 0.000 claims description 18
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 15
- 229910052711 selenium Inorganic materials 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 125000006413 ring segment Chemical group 0.000 claims description 13
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 125000001153 fluoro group Chemical group F* 0.000 claims description 9
- 125000004429 atom Chemical group 0.000 claims description 7
- 125000005309 thioalkoxy group Chemical group 0.000 claims description 7
- 125000004001 thioalkyl group Chemical group 0.000 claims description 7
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052794 bromium Inorganic materials 0.000 claims description 5
- 125000004122 cyclic group Chemical group 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 229910052740 iodine Inorganic materials 0.000 claims description 4
- 125000001544 thienyl group Chemical group 0.000 claims description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 39
- 125000000923 (C1-C30) alkyl group Chemical group 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 81
- 239000010410 layer Substances 0.000 description 66
- 150000001875 compounds Chemical class 0.000 description 54
- 239000000243 solution Substances 0.000 description 41
- -1 polycrystal Si Inorganic materials 0.000 description 40
- 230000015572 biosynthetic process Effects 0.000 description 38
- 238000003786 synthesis reaction Methods 0.000 description 33
- 238000005160 1H NMR spectroscopy Methods 0.000 description 32
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 28
- 239000010408 film Substances 0.000 description 27
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 24
- 239000000872 buffer Substances 0.000 description 21
- 239000002904 solvent Substances 0.000 description 20
- 238000005259 measurement Methods 0.000 description 18
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical group C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000012044 organic layer Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 239000002184 metal Chemical class 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 239000003921 oil Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 8
- 150000004945 aromatic hydrocarbons Chemical group 0.000 description 8
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000010992 reflux Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- MZRVEZGGRBJDDB-UHFFFAOYSA-N n-Butyllithium Substances [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 5
- 238000010898 silica gel chromatography Methods 0.000 description 5
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical class O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 239000011135 tin Substances 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- PCLIMKBDDGJMGD-UHFFFAOYSA-N N-bromosuccinimide Chemical compound BrN1C(=O)CCC1=O PCLIMKBDDGJMGD-UHFFFAOYSA-N 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000004440 column chromatography Methods 0.000 description 4
- 229910003472 fullerene Inorganic materials 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 4
- 235000019341 magnesium sulphate Nutrition 0.000 description 4
- KELHQGOVULCJSG-UHFFFAOYSA-N n,n-dimethyl-1-(5-methylfuran-2-yl)ethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=C(C)O1 KELHQGOVULCJSG-UHFFFAOYSA-N 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 4
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 0 CCCC(C(C(C(*1)=CC(*)C1C(C)(C)*)C1=N*[C@](C)[C@@]11)F)=C1C(*1)=CC(*2)C1C(CC1=*(C3OC(C(C)(*)*)=CC33)C4=CC=C(*)CC4)*2C1=C3C1=CCC(O)S1 Chemical compound CCCC(C(C(C(*1)=CC(*)C1C(C)(C)*)C1=N*[C@](C)[C@@]11)F)=C1C(*1)=CC(*2)C1C(CC1=*(C3OC(C(C)(*)*)=CC33)C4=CC=C(*)CC4)*2C1=C3C1=CCC(O)S1 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229920000144 PEDOT:PSS Polymers 0.000 description 3
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- TXCDCPKCNAJMEE-UHFFFAOYSA-N dibenzofuran Chemical group C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 description 3
- 235000011152 sodium sulphate Nutrition 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 125000003960 triphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12)* 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- CYPYTURSJDMMMP-WVCUSYJESA-N (1e,4e)-1,5-diphenylpenta-1,4-dien-3-one;palladium Chemical compound [Pd].[Pd].C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1 CYPYTURSJDMMMP-WVCUSYJESA-N 0.000 description 2
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- RELMFMZEBKVZJC-UHFFFAOYSA-N 1,2,3-trichlorobenzene Chemical compound ClC1=CC=CC(Cl)=C1Cl RELMFMZEBKVZJC-UHFFFAOYSA-N 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 2
- LVEYOSJUKRVCCF-UHFFFAOYSA-N 1,3-bis(diphenylphosphino)propane Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)CCCP(C=1C=CC=CC=1)C1=CC=CC=C1 LVEYOSJUKRVCCF-UHFFFAOYSA-N 0.000 description 2
- XMVBHZBLHNOQON-UHFFFAOYSA-N 2-butyl-1-octanol Chemical compound CCCCCCC(CO)CCCC XMVBHZBLHNOQON-UHFFFAOYSA-N 0.000 description 2
- IHCCAYCGZOLTEU-UHFFFAOYSA-N 3-furoic acid Chemical compound OC(=O)C=1C=COC=1 IHCCAYCGZOLTEU-UHFFFAOYSA-N 0.000 description 2
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 2
- 125000004448 alkyl carbonyl group Chemical group 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- 125000000732 arylene group Chemical group 0.000 description 2
- 125000006267 biphenyl group Chemical group 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- IYYZUPMFVPLQIF-ALWQSETLSA-N dibenzothiophene Chemical group C1=CC=CC=2[34S]C3=C(C=21)C=CC=C3 IYYZUPMFVPLQIF-ALWQSETLSA-N 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 150000002148 esters Chemical group 0.000 description 2
- 239000004210 ether based solvent Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 125000003914 fluoranthenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC=C4C1=C23)* 0.000 description 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000005549 heteroarylene group Chemical group 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 2
- 125000005561 phenanthryl group Chemical group 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 125000000168 pyrrolyl group Chemical group 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- CRUIOQJBPNKOJG-UHFFFAOYSA-N thieno[3,2-e][1]benzothiole Chemical group C1=C2SC=CC2=C2C=CSC2=C1 CRUIOQJBPNKOJG-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 2
- 229910052722 tritium Inorganic materials 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 125000006732 (C1-C15) alkyl group Chemical group 0.000 description 1
- 239000001211 (E)-4-phenylbut-3-en-2-one Substances 0.000 description 1
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- CKJCTZAIDVFHCX-UHFFFAOYSA-N 1,10-diiododecane Chemical compound ICCCCCCCCCCI CKJCTZAIDVFHCX-UHFFFAOYSA-N 0.000 description 1
- UGUHFDPGDQDVGX-UHFFFAOYSA-N 1,2,3-thiadiazole Chemical group C1=CSN=N1 UGUHFDPGDQDVGX-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- 125000000355 1,3-benzoxazolyl group Chemical group O1C(=NC2=C1C=CC=C2)* 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- ROUYUBHVBIKMQO-UHFFFAOYSA-N 1,4-diiodobutane Chemical compound ICCCCI ROUYUBHVBIKMQO-UHFFFAOYSA-N 0.000 description 1
- QLIMAARBRDAYGQ-UHFFFAOYSA-N 1,6-diiodohexane Chemical compound ICCCCCCI QLIMAARBRDAYGQ-UHFFFAOYSA-N 0.000 description 1
- PGTWZHXOSWQKCY-UHFFFAOYSA-N 1,8-Octanedithiol Chemical compound SCCCCCCCCS PGTWZHXOSWQKCY-UHFFFAOYSA-N 0.000 description 1
- KZDTZHQLABJVLE-UHFFFAOYSA-N 1,8-diiodooctane Chemical compound ICCCCCCCCI KZDTZHQLABJVLE-UHFFFAOYSA-N 0.000 description 1
- IANQTJSKSUMEQM-UHFFFAOYSA-N 1-benzofuran Chemical group C1=CC=C2OC=CC2=C1 IANQTJSKSUMEQM-UHFFFAOYSA-N 0.000 description 1
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical group C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 1
- 125000004973 1-butenyl group Chemical group C(=CCC)* 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- JTPNRXUCIXHOKM-UHFFFAOYSA-N 1-chloronaphthalene Chemical compound C1=CC=C2C(Cl)=CC=CC2=C1 JTPNRXUCIXHOKM-UHFFFAOYSA-N 0.000 description 1
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 1
- AELZBFQHFNMGJS-UHFFFAOYSA-N 1h-1-benzosilole Chemical group C1=CC=C2[SiH2]C=CC2=C1 AELZBFQHFNMGJS-UHFFFAOYSA-N 0.000 description 1
- VFBJMPNFKOMEEW-UHFFFAOYSA-N 2,3-diphenylbut-2-enedinitrile Chemical group C=1C=CC=CC=1C(C#N)=C(C#N)C1=CC=CC=C1 VFBJMPNFKOMEEW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- UXGVMFHEKMGWMA-UHFFFAOYSA-N 2-benzofuran Chemical group C1=CC=CC2=COC=C21 UXGVMFHEKMGWMA-UHFFFAOYSA-N 0.000 description 1
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000001494 2-propynyl group Chemical group [H]C#CC([H])([H])* 0.000 description 1
- NZWIYPLSXWYKLH-UHFFFAOYSA-N 3-(bromomethyl)heptane Chemical compound CCCCC(CC)CBr NZWIYPLSXWYKLH-UHFFFAOYSA-N 0.000 description 1
- XCMISAPCWHTVNG-UHFFFAOYSA-N 3-bromothiophene Chemical compound BrC=1C=CSC=1 XCMISAPCWHTVNG-UHFFFAOYSA-N 0.000 description 1
- 125000004975 3-butenyl group Chemical group C(CC=C)* 0.000 description 1
- RBIGKSZIQCTIJF-UHFFFAOYSA-N 3-formylthiophene Chemical compound O=CC=1C=CSC=1 RBIGKSZIQCTIJF-UHFFFAOYSA-N 0.000 description 1
- MRWWWZLJWNIEEJ-UHFFFAOYSA-N 4,4,5,5-tetramethyl-2-propan-2-yloxy-1,3,2-dioxaborolane Chemical compound CC(C)OB1OC(C)(C)C(C)(C)O1 MRWWWZLJWNIEEJ-UHFFFAOYSA-N 0.000 description 1
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- DDTHMESPCBONDT-UHFFFAOYSA-N 4-(4-oxocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-one Chemical class C1=CC(=O)C=CC1=C1C=CC(=O)C=C1 DDTHMESPCBONDT-UHFFFAOYSA-N 0.000 description 1
- WLNFHSOQOLOFQO-UHFFFAOYSA-N 5,6-difluoro-4,7-diiodo-2,1,3-benzothiadiazole Chemical compound IC1=C(F)C(F)=C(I)C2=NSN=C21 WLNFHSOQOLOFQO-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229920000219 Ethylene vinyl alcohol Polymers 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000007818 Grignard reagent Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- UUIQMZJEGPQKFD-UHFFFAOYSA-N Methyl butyrate Chemical compound CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical group C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 229920000292 Polyquinoline Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 241000720974 Protium Species 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical group C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GCTFWCDSFPMHHS-UHFFFAOYSA-M Tributyltin chloride Chemical compound CCCC[Sn](Cl)(CCCC)CCCC GCTFWCDSFPMHHS-UHFFFAOYSA-M 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical group C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- ULGYAEQHFNJYML-UHFFFAOYSA-N [AlH3].[Ca] Chemical compound [AlH3].[Ca] ULGYAEQHFNJYML-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000000641 acridinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229940072049 amyl acetate Drugs 0.000 description 1
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical group C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 1
- KCXMKQUNVWSEMD-UHFFFAOYSA-N benzyl chloride Chemical compound ClCC1=CC=CC=C1 KCXMKQUNVWSEMD-UHFFFAOYSA-N 0.000 description 1
- 229930008407 benzylideneacetone Natural products 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 125000002676 chrysenyl group Chemical group C1(=CC=CC=2C3=CC=C4C=CC=CC4=C3C=CC12)* 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- ZBQUMMFUJLOTQC-UHFFFAOYSA-L dichloronickel;3-diphenylphosphanylpropyl(diphenyl)phosphane Chemical compound Cl[Ni]Cl.C=1C=CC=CC=1P(C=1C=CC=CC=1)CCCP(C=1C=CC=CC=1)C1=CC=CC=C1 ZBQUMMFUJLOTQC-UHFFFAOYSA-L 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000000532 dioxanyl group Chemical group 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 229910052949 galena Inorganic materials 0.000 description 1
- 150000004795 grignard reagents Chemical class 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- LHJOPRPDWDXEIY-UHFFFAOYSA-N indium lithium Chemical compound [Li].[In] LHJOPRPDWDXEIY-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 125000001041 indolyl group Chemical group 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000000904 isoindolyl group Chemical group C=1(NC=C2C=CC=CC12)* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- GCICAPWZNUIIDV-UHFFFAOYSA-N lithium magnesium Chemical compound [Li].[Mg] GCICAPWZNUIIDV-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000005394 methallyl group Chemical group 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical group C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- RDOWQLZANAYVLL-UHFFFAOYSA-N phenanthridine Chemical group C1=CC=C2C3=CC=CC=C3C=NC2=C1 RDOWQLZANAYVLL-UHFFFAOYSA-N 0.000 description 1
- 125000001484 phenothiazinyl group Chemical group C1(=CC=CC=2SC3=CC=CC=C3NC12)* 0.000 description 1
- GJSGGHOYGKMUPT-UHFFFAOYSA-N phenoxathiine Chemical group C1=CC=C2OC3=CC=CC=C3SC2=C1 GJSGGHOYGKMUPT-UHFFFAOYSA-N 0.000 description 1
- 125000001644 phenoxazinyl group Chemical group C1(=CC=CC=2OC3=CC=CC=C3NC12)* 0.000 description 1
- 125000004193 piperazinyl group Chemical group 0.000 description 1
- 125000003386 piperidinyl group Chemical group 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 125000004309 pyranyl group Chemical group O1C(C=CC=C1)* 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical group S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- ZWWLLYJRPKYTDF-UHFFFAOYSA-N thiophene-3,4-dicarboxylic acid Chemical compound OC(=O)C1=CSC=C1C(O)=O ZWWLLYJRPKYTDF-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- GZNAASVAJNXPPW-UHFFFAOYSA-M tin(4+) chloride dihydrate Chemical compound O.O.[Cl-].[Sn+4] GZNAASVAJNXPPW-UHFFFAOYSA-M 0.000 description 1
- FWPIDFUJEMBDLS-UHFFFAOYSA-L tin(II) chloride dihydrate Substances O.O.Cl[Sn]Cl FWPIDFUJEMBDLS-UHFFFAOYSA-L 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- BWHOZHOGCMHOBV-BQYQJAHWSA-N trans-benzylideneacetone Chemical compound CC(=O)\C=C\C1=CC=CC=C1 BWHOZHOGCMHOBV-BQYQJAHWSA-N 0.000 description 1
- 150000003852 triazoles Chemical group 0.000 description 1
- COHOGNZHAUOXPA-UHFFFAOYSA-N trimethyl(phenyl)stannane Chemical compound C[Sn](C)(C)C1=CC=CC=C1 COHOGNZHAUOXPA-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Abstract
【課題】光電変換効率に優れた塗布型の有機薄膜太陽電池材料の提供。
【解決手段】式(1)等で表される繰り返し単位を含むポリマー。
(R1〜R5は各々独立にH、C1〜30のアルキル基、分岐した炭素数1〜30のアルキル基等;X1〜X3は各々独立に、O、S又はSe、N−R5;nは繰り返し数)
【選択図】なしDisclosed is a coating-type organic thin-film solar cell material excellent in photoelectric conversion efficiency.
A polymer containing a repeating unit represented by formula (1) or the like.
(R 1 to R 5 are each independently H, C1-30 alkyl group, branched alkyl group having 1 to 30 carbon atoms, etc .; X 1 to X 3 are each independently O, S or Se, N—R; 5 ; n is the number of repetitions)
[Selection figure] None
Description
本発明は、ベンゾフラノチオフェン骨格を有するモノマー及びポリマー、そのポリマーを含む有機薄膜太陽電池材料、及びその材料を用いた有機薄膜太陽電池及び装置に関する。 The present invention relates to a monomer and polymer having a benzofuranothiophene skeleton, an organic thin film solar cell material containing the polymer, and an organic thin film solar cell and apparatus using the material.
有機薄膜太陽電池は、光信号を電気信号に変換するフォトダイオードや撮像素子、光エネルギーを電気エネルギーに変換する太陽電池に代表されるように、光入力に対して電気出力を示す装置である。中でも太陽電池は、化石燃料の枯渇問題や地球温暖化問題を背景に、クリーンエネルギー源として近年大変注目されてきており、研究開発が盛んに行なわれるようになってきた。従来、実用化されてきたのは、単結晶Si、多結晶Si、アモルファスSi等に代表されるシリコン系太陽電池であるが、高価であることや原料Siの不足問題等が表面化するにつれて、次世代太陽電池への要求が高まりつつある。 Organic thin-film solar cells are devices that exhibit an electrical output with respect to light input, as represented by photodiodes and imaging devices that convert optical signals into electrical signals, and solar cells that convert optical energy into electrical energy. In particular, solar cells have attracted a great deal of attention as a clean energy source in recent years against the background of fossil fuel depletion and global warming, and research and development have been actively conducted. Conventionally, silicon solar cells represented by single crystal Si, polycrystal Si, amorphous Si, etc. have been put into practical use. However, as the cost and raw material Si shortage problems surface, The demand for next generation solar cells is increasing.
また、結晶シリコンは原料が高価であるばかりでなく、スパッタリング法によって成膜を行わなければならない。太陽電池の活性層を塗布法、さらには印刷法という高速プロセスで成膜することができれば、従来に比べて圧倒的に低コストで有機薄膜太陽電池を生産することが可能である。
上記のような観点から有機太陽電池材料が開発されているが(特許文献1及び非特許文献1)、さらに性能の優れた材料が求められていた。
Crystal silicon is not only expensive, but must be deposited by sputtering. If the active layer of the solar cell can be formed by a high-speed process such as a coating method or a printing method, it is possible to produce an organic thin film solar cell at an overwhelmingly low cost compared to the conventional method.
From the above viewpoint, organic solar cell materials have been developed (Patent Document 1 and Non-Patent Document 1), but materials having further excellent performance have been demanded.
有機薄膜太陽電池は、その性能を示す3つのパラメータが重要である。即ち、短絡電流密度(Jsc)(mA/cm2)、開放端電圧(Voc)(V)、曲線因子(FF)であり、これらの積が変換効率(%)である。
例えば、非特許文献2のベンゾジチオフェン骨格を用いたp型高分子材料は、Jscが9.79(mA/cm2)、Vocが1.00(V)、FFが0.63、変換効率が6.17%であった。これらの性能は必ずしも十分ではないため、変換効率の向上が求められている。また、有機薄膜太陽電池を用いたデバイス(モジュール等)では、VocやFFが高いほどモジュール設計に有利に働くため、VocとFFが特に重要なパラメータである。
Three parameters indicating the performance of an organic thin film solar cell are important. That is, they are the short circuit current density (Jsc) (mA / cm 2 ), the open circuit voltage (Voc) (V), and the fill factor (FF), and the product of these is the conversion efficiency (%).
For example, the p-type polymer material using the benzodithiophene skeleton of Non-Patent Document 2 has a Jsc of 9.79 (mA / cm 2 ), Voc of 1.00 (V), FF of 0.63, conversion efficiency Was 6.17%. Since these performances are not always sufficient, improvement in conversion efficiency is required. In addition, in a device (module or the like) using an organic thin film solar cell, Voc and FF are particularly important parameters because the higher Voc and FF, the more advantageous the module design.
特許文献1や非特許文献3に記載のポリマーは、Jscが13.51(mA/cm2)、Vocが0.78(V)、FFが0.61、変換効率が6.42%である。また、最も検討されているPTB7(非特許文献4)においても、Jscが14.5(mA/cm2)、Vocが0.74(V)、FFが0.69、変換効率が7.40%である。
これらの材料もVoc及び変換効率が必ずしも十分ではないため、さらなる性能の向上が求められている。
The polymers described in Patent Literature 1 and Non-Patent Literature 3 have Jsc of 13.51 (mA / cm 2 ), Voc of 0.78 (V), FF of 0.61, and conversion efficiency of 6.42%. . In addition, even in the most studied PTB7 (Non-Patent Document 4), Jsc is 14.5 (mA / cm 2 ), Voc is 0.74 (V), FF is 0.69, and conversion efficiency is 7.40. %.
Since these materials do not necessarily have sufficient Voc and conversion efficiency, further improvement in performance is required.
本発明の目的は、光電変換効率に優れた有機薄膜太陽電池を製造することができる塗布型の有機薄膜太陽電池材料を提供することである。 The objective of this invention is providing the coating type organic thin film solar cell material which can manufacture the organic thin film solar cell excellent in the photoelectric conversion efficiency.
上記課題を達成するため、本発明者らは鋭意研究を行い、ベンゾジチオフェン骨格の硫黄原子を酸素原子に置換したベンゾフラノチオフェン骨格を用いると、4,8位に置換したアリール基又はヘテロアリール基の平面性が向上することにより優れた性能を示すことを見出した。さらに、ベンゾフラノチオフェン骨格と特定の電子吸引性骨格を用いることにより、変換効率を向上することができることを見出し、本発明を完成させた。
本発明によれば以下のポリマー等が提供される。
1.下記式(1)〜(5)のいずれかで表される繰り返し単位を含むポリマー。
R3、R4は、それぞれ独立に、分岐した炭素数1〜30のアルキル基、分岐した炭素数2〜30のアルケニル基、又は分岐した炭素数2〜30のアルキニル基である。
X1、X2、X4及びX7は、それぞれ独立に、酸素原子、硫黄原子又はセレン原子である。
X3は、それぞれ独立に、酸素原子、硫黄原子、セレン原子又はN−R5である。
X5及びX6は、それぞれ独立に、酸素原子又は硫黄原子である。
R5及びR6、R7は、水素原子、炭素数1〜30のアルキル基、置換若しくは無置換の炭素数1〜30のアルコキシ基、置換若しくは無置換の環形成炭素数6〜20のアリール基、又は置換若しくは無置換の環形成原子数5〜20のヘテロアリール基である。
nは繰り返し数を表す。)
2.前記式(1)又は(2)で表される繰り返し単位を含む1に記載のポリマー。
3.前記式(3)又は(4)で表される繰り返し単位を含む1に記載のポリマー。
4.下記式(10)で表される繰り返し単位を含むポリマー。
x及びyは、それぞれ独立に、0以上の整数である。
nは繰り返し数を表す。
Ar1及びAr2は、それぞれ独立に、下記式のいずれかで表される基である。
R10は、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、炭素数2〜50のアルキニル基、炭素数1〜50のアルコキシ基、炭素数1〜50のチオアルキル基又は炭素数1〜50のチオアルコキシ基である。
R11は、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、炭素数2〜50のアルキニル基、又は炭素数1〜50のアルコキシ基である。
p1は0〜3の整数である。
p2は0〜5の整数である。
p3は0〜7の整数である。))
5.Ar3が下記式のいずれかで表される4に記載のポリマー。
6.Ar3が下記式のいずれかで表される4に記載のポリマー。
7.Ar3が下記式のいずれかで表される4に記載のポリマー。
8.x及びyが0である4〜7のいずれかに記載のポリマー。
9.x及びyが、それぞれ独立に、1以上の整数である4〜7のいずれかに記載のポリマー。
10.x及びyが1であり、L1及びL2が下記式で表される4〜7のいずれかに記載のポリマー。
R20及びR21は、それぞれ独立に、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、又は炭素数2〜50のアルキニル基である。)
11.下記式(20)で表されるモノマー。
Ra及びRbは、それぞれ独立に、Cl、Br、I、−Sn(Rc)3、又は−B(OR’)(OR'')であり、Rcは、それぞれ独立に、炭素数4〜12のアルキル基であり、R’及びR''は、それぞれ独立に、水素原子又は炭素数1〜12のアルキル基であるか、又は、OR’及びOR''は、ホウ素原子と共に炭素数2〜24の環状基を形成する。)
12.Ar1及びAr2が、置換若しくは無置換の炭素数1〜30のアルキル基が置換したチオフェニル基ではない12に記載のモノマー。
13.Ar1及びAr2が、それぞれ独立に、下記式のいずれかで表される基である11又は12に記載のモノマー。
R10は、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、炭素数2〜50のアルキニル基、炭素数1〜50のアルコキシ基、炭素数1〜50のチオアルキル基又は炭素数1〜50のチオアルコキシ基である。
R11は、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、又は炭素数2〜50のアルキニル基である。
p1は0〜3の整数である。
p2は0〜5の整数である。
p3は0〜7の整数である。))
14.Ra及びRbが、それぞれ独立に、−Sn(Rc)3であり、Rcがノルマルブチル基である11〜13のいずれかに記載のモノマー。
15.1〜10のいずれかに記載のポリマーを含む有機薄膜太陽電池材料。
16.15に記載の有機薄膜太陽電池材料を含む活性層を有する有機薄膜太陽電池。
17.16に記載の有機薄膜太陽電池を具備する装置。
In order to achieve the above-mentioned problems, the present inventors have conducted intensive research. When a benzofuranothiophene skeleton in which the sulfur atom of the benzodithiophene skeleton is substituted with an oxygen atom is used, an aryl group or heteroaryl substituted at the 4,8-position It has been found that excellent performance is obtained by improving the planarity of the group. Furthermore, the present inventors have found that the conversion efficiency can be improved by using a benzofuranothiophene skeleton and a specific electron-withdrawing skeleton, and completed the present invention.
According to the present invention, the following polymers and the like are provided.
1. The polymer containing the repeating unit represented by either of following formula (1)-(5).
X 1 , X 2 , X 4 and X 7 are each independently an oxygen atom, a sulfur atom or a selenium atom.
X 3 is each independently an oxygen atom, a sulfur atom, a selenium atom, or N—R 5 .
X 5 and X 6 are each independently an oxygen atom or a sulfur atom.
R 5, R 6 and R 7 are each a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 ring carbon atoms. Or a substituted or unsubstituted heteroaryl group having 5 to 20 ring atoms.
n represents the number of repetitions. )
2. 2. The polymer according to 1, comprising a repeating unit represented by the formula (1) or (2).
3. 2. The polymer according to 1, comprising a repeating unit represented by the formula (3) or (4).
4). The polymer containing the repeating unit represented by following formula (10).
x and y are each independently an integer of 0 or more.
n represents the number of repetitions.
Ar 1 and Ar 2 are each independently a group represented by any of the following formulae.
R 10 is an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, an alkynyl group having 2 to 50 carbon atoms, an alkoxy group having 1 to 50 carbon atoms, a thioalkyl group having 1 to 50 carbon atoms, or carbon. A thioalkoxy group having a number of 1 to 50.
R 11 is an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, an alkynyl group having 2 to 50 carbon atoms, or an alkoxy group having 1 to 50 carbon atoms.
p1 is an integer of 0-3.
p2 is an integer of 0-5.
p3 is an integer of 0-7. ))
5. 5. The polymer according to 4, wherein Ar 3 is represented by any of the following formulae.
6). 5. The polymer according to 4, wherein Ar 3 is represented by any of the following formulae.
7). 5. The polymer according to 4, wherein Ar 3 is represented by any of the following formulae.
8). The polymer according to any one of 4 to 7, wherein x and y are 0.
9. The polymer according to any one of 4 to 7, wherein x and y are each independently an integer of 1 or more.
10. The polymer according to any one of 4 to 7, wherein x and y are 1, and L 1 and L 2 are represented by the following formula.
R 20 and R 21 are each independently an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, or an alkynyl group having 2 to 50 carbon atoms. )
11 A monomer represented by the following formula (20).
R a and R b are each independently Cl, Br, I, —Sn (R c ) 3 , or —B (OR ′) (OR ″), and each R c is independently a carbon number 4 to 12 alkyl groups, and R ′ and R ″ are each independently a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, or OR ′ and OR ″ are carbon atoms together with a boron atom. A cyclic group of 2 to 24 is formed. )
12 13. The monomer according to 12, wherein Ar 1 and Ar 2 are not a thiophenyl group substituted by a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms.
13. The monomer according to 11 or 12, wherein Ar 1 and Ar 2 are each independently a group represented by any of the following formulae.
R 10 is an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, an alkynyl group having 2 to 50 carbon atoms, an alkoxy group having 1 to 50 carbon atoms, a thioalkyl group having 1 to 50 carbon atoms, or carbon. A thioalkoxy group having a number of 1 to 50.
R 11 is an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, or an alkynyl group having 2 to 50 carbon atoms.
p1 is an integer of 0-3.
p2 is an integer of 0-5.
p3 is an integer of 0-7. ))
14 The monomer according to any one of 11 to 13, wherein R a and R b are each independently -Sn (R c ) 3 and R c is a normal butyl group.
15. Organic thin-film solar cell material containing the polymer in any one of 1-10.
16. An organic thin film solar cell having an active layer containing the organic thin film solar cell material according to 16.15.
A device comprising the organic thin-film solar cell according to 17.16.
本発明によれば、光電変換効率に優れた有機薄膜太陽電池を製造することができる塗布型の有機薄膜太陽電池材料が提供できる。 ADVANTAGE OF THE INVENTION According to this invention, the coating type organic thin film solar cell material which can manufacture the organic thin film solar cell excellent in the photoelectric conversion efficiency can be provided.
[ポリマー]
本発明の第1ポリマーは、下記式(1)〜(5)のいずれかで表される繰り返し単位を含む。
R3、R4は、それぞれ独立に、分岐した炭素数1〜30のアルキル基、分岐した炭素数2〜30のアルケニル基、又は分岐した炭素数2〜30のアルキニル基である。
X1、X2、X4及びX7は、それぞれ独立に、酸素原子、硫黄原子又はセレン原子である。
X3は、それぞれ独立に、酸素原子、硫黄原子、セレン原子又はN−R5である。
X5及びX6は、それぞれ独立に、酸素原子又は硫黄原子である。
R5及びR6、R7は、水素原子、炭素数1〜30のアルキル基、置換若しくは無置換の炭素数1〜30のアルコキシ基、置換若しくは無置換の環形成炭素数6〜20のアリール基、又は置換若しくは無置換の環形成原子数5〜20のヘテロアリール基である。
nは繰り返し数を表す。
[polymer]
The 1st polymer of this invention contains the repeating unit represented by either of following formula (1)-(5).
R 3 and R 4 each independently represent a branched alkyl group having 1 to 30 carbon atoms, a branched alkenyl group having 2 to 30 carbon atoms, or a branched alkynyl group having 2 to 30 carbon atoms.
X 1 , X 2 , X 4 and X 7 are each independently an oxygen atom, a sulfur atom or a selenium atom.
X 3 is each independently an oxygen atom, a sulfur atom, a selenium atom, or N—R 5 .
X 5 and X 6 are each independently an oxygen atom or a sulfur atom.
R 5, R 6 and R 7 are each a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 ring carbon atoms. Or a substituted or unsubstituted heteroaryl group having 5 to 20 ring atoms.
n represents the number of repetitions.
本発明の第1のポリマーは、ベンゾフラノチオフェン骨格に、特定の電子吸引性骨格を組み合わせることによって、有機薄膜太陽電池に用いたときに高い変換効率を得ることができる。
ここで、アゾール化合物は溶解性が低く塗布性が悪いため、R3、R4は分岐したアルキル基、分岐したアルケニル基又は分岐したアルキニル基とすることにより、高い変換効率を有しつつ、良好な塗布性を備えた有機薄膜太陽電池材料とした。
The first polymer of the present invention can obtain high conversion efficiency when used in an organic thin film solar cell by combining a specific electron-withdrawing skeleton with a benzofuranothiophene skeleton.
Here, since the azole compound has low solubility and poor applicability, R 3 and R 4 have a high conversion efficiency and are good by using a branched alkyl group, a branched alkenyl group or a branched alkynyl group. An organic thin film solar cell material having excellent coating properties was obtained.
式(1)〜(5)で表される繰り返し単位はいずれでもよいが、式(1)又は(2)で表される繰り返し単位が好ましく、また、式(3)又は(4)で表される繰り返し単位も好ましい。 Although the repeating unit represented by Formula (1)-(5) may be any, the repeating unit represented by Formula (1) or (2) is preferable, and also represented by Formula (3) or (4). The repeating unit is also preferred.
R1、R2は、好ましくは、それぞれ独立に、分岐した炭素数1〜30のアルキル基である。
R3、R4は、好ましくは、それぞれ独立に、分岐した炭素数1〜30のアルキル基である。
X1〜X4は、好ましくは硫黄原子である。
X5及びX6は、好ましくは、それぞれ独立に、酸素原子である。
R5及びR6は、好ましくは、炭素数1〜30のアルキル基である。
R 1 and R 2 are preferably each independently a branched alkyl group having 1 to 30 carbon atoms.
R 3 and R 4 are preferably each independently a branched alkyl group having 1 to 30 carbon atoms.
X 1 to X 4 are preferably sulfur atoms.
X 5 and X 6 are preferably each independently an oxygen atom.
R 5 and R 6 are preferably an alkyl group having 1 to 30 carbon atoms.
また、本発明の第2のポリマーは下記式(10)で表される繰り返し単位を含む。
x及びyは、それぞれ独立に、0以上の整数である。
nは繰り返し数を表す。
Ar1及びAr2は、それぞれ独立に、下記式のいずれかで表される基である。
R10は、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、炭素数2〜50のアルキニル基、炭素数1〜50のアルコキシ基、炭素数1〜50のチオアルキル基又は炭素数1〜50のチオアルコキシ基である。
R11は、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、炭素数2〜50のアルキニル基、又は炭素数1〜50のアルコキシ基である。
p1は0〜3の整数である。
p2は0〜5の整数である。
p3は0〜7の整数である。
Moreover, the 2nd polymer of this invention contains the repeating unit represented by following formula (10).
x and y are each independently an integer of 0 or more.
n represents the number of repetitions.
Ar 1 and Ar 2 are each independently a group represented by any of the following formulae.
R 10 is an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, an alkynyl group having 2 to 50 carbon atoms, an alkoxy group having 1 to 50 carbon atoms, a thioalkyl group having 1 to 50 carbon atoms, or carbon. A thioalkoxy group having a number of 1 to 50.
R 11 is an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, an alkynyl group having 2 to 50 carbon atoms, or an alkoxy group having 1 to 50 carbon atoms.
p1 is an integer of 0-3.
p2 is an integer of 0-5.
p3 is an integer of 0-7.
本発明の第2のポリマーは、Ar1,Ar2に所定の置換基を有することで優れた溶解性と塗布性を有し、また、吸収波長、エネルギー準位をより適したものとすることができるため、変換効率に優れる。 The second polymer of the present invention has excellent solubility and coating properties by having predetermined substituents in Ar 1 and Ar 2 , and more suitable absorption wavelength and energy level. Therefore, the conversion efficiency is excellent.
Ar1及びAr2は、好ましくは、それぞれ独立に下記式のいずれかで表される。
X及びYは、好ましくは、それぞれ独立に硫黄原子である。
R10は、好ましくは、炭素数8〜24のアルキル基又は炭素数8〜24のアルコキシ基である。
R11は、好ましくは、8〜24のアルキル基である。
p1及びp2は、好ましくは0又は1である。
X and Y are preferably each independently a sulfur atom.
R 10 is preferably an alkyl group having 8 to 24 carbon atoms or an alkoxy group having 8 to 24 carbon atoms.
R 11 is preferably an 8-24 alkyl group.
p1 and p2 are preferably 0 or 1.
Ar3は、好ましくは下記式のいずれかで表される。
Ar3は、下記式(i)〜(iv)のいずれかで表されるとより好ましい。このうち、式(i)又は(ii)であってもよく、式(iii)又は(iv)であってもよい。
式(10)において、x及びyが0であってもよく、又はそれぞれ1以上の整数、例えば1であってもよい。即ち、本発明の第2のポリマーは、好ましくは、下記式(11)又は(12)で表される。
式(11)において、Ar3は好ましくは上記式(iii)又は(iv)で表される。
式(iii)、(iv)において、Rは好ましくは水素原子、フッ素原子、置換若しくは無置換の炭素数1〜30のアルキル基、置換若しくは無置換の炭素数1〜30のアルコキシ基、又は置換若しくは無置換の環形成原子数5〜20のヘテロアリール基である。
In the formula (11), Ar 3 is preferably represented by the above formula (iii) or (iv).
In formulas (iii) and (iv), R is preferably a hydrogen atom, a fluorine atom, a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, or a substituted group. Alternatively, it is an unsubstituted heteroaryl group having 5 to 20 ring atoms.
式(12)において、Ar3は好ましくは上記式(i)又は(ii)で表される。 In the formula (12), Ar 3 is preferably represented by the above formula (i) or (ii).
また、式(12)において、L1及びL2が下記式で表されると好ましい。
R20及びR21は、それぞれ独立に、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、又は炭素数2〜50のアルキニル基であり、好ましくは、それぞれ独立に、炭素数1〜30のアルキル基であり、より好ましくは直鎖又は分岐を有する炭素数1〜15のアルキル基である。 R 20 and R 21 are each independently an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, or an alkynyl group having 2 to 50 carbon atoms, preferably each independently having a carbon number It is a 1-30 alkyl group, More preferably, it is a C1-C15 alkyl group which has a linear or branched.
−(L1)x−Ar3−(L2)y−は、上記のAr3、L1及びL2の例を組み合わせてなる基であることが好ましく、その中でも下記式のいずれかで表される基であることが好ましい。
本発明の第1及び第2のポリマー(以下、これらを「本発明のポリマー」と言うことがある)の重量平均分子量は、20,000〜500,000の範囲であることが好ましく、20,000〜200,000の範囲であることがより好ましい。また、数平均分子量は10,000〜300,000の範囲であることが好ましく、10,000〜200,000の範囲であることがより好ましい。 The weight average molecular weight of the first and second polymers of the present invention (hereinafter sometimes referred to as “the polymer of the present invention”) is preferably in the range of 20,000 to 500,000, More preferably, it is in the range of 000 to 200,000. The number average molecular weight is preferably in the range of 10,000 to 300,000, and more preferably in the range of 10,000 to 200,000.
本発明の第1のポリマーは、式(1)〜(5)のいずれかで表される構造を有していればよく、それ以外の構造を有していてもよい。本発明の第2のポリマーは、式(10)で表される構造を有していればよく、それ以外の構造を有していてもよい。
本発明のポリマーは、後記する実施例に記載の方法、又はこれに準ずる方法で製造することができる。
The 1st polymer of this invention should just have the structure represented by either of Formula (1)-(5), and may have a structure other than that. The 2nd polymer of this invention should just have a structure represented by Formula (10), and may have another structure.
The polymer of this invention can be manufactured by the method as described in the Example mentioned later, or the method according to this.
[モノマー]
本発明のモノマーは下記式(20)で表される。
Ra及びRbは、それぞれ独立に、Cl、Br、I、−Sn(Rc)3、又は−B(OR’)(OR'')であり、Rcは、それぞれ独立に、炭素数4〜12のアルキル基であり、R’及びR''は、それぞれ独立に、水素原子又は炭素数1〜12のアルキル基であるか、又は、OR’及びOR''は、ホウ素原子と共に炭素数2〜24の環状基を形成する。
尚、「ホウ素原子と共に環状基を形成する」とは、BとOR’とOR''とが連なって1つの環を形成することを言う。
[monomer]
The monomer of the present invention is represented by the following formula (20).
R a and R b are each independently Cl, Br, I, —Sn (R c ) 3 , or —B (OR ′) (OR ″), and each R c is independently a carbon number 4 to 12 alkyl groups, and R ′ and R ″ are each independently a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, or OR ′ and OR ″ are carbon atoms together with a boron atom. A cyclic group of 2 to 24 is formed.
“Forming a cyclic group together with a boron atom” means that B, OR ′, and OR ″ are linked to form one ring.
本発明のモノマーを重合に用いることにより、本発明のポリマーを製造することができる。 The polymer of the present invention can be produced by using the monomer of the present invention for polymerization.
Ar1及びAr2は、上記の基のうち、炭素数1〜30のアルキル基が置換したチオフェニル基以外の基としてもよい。
Ar1及びAr2は、好ましくは、それぞれ独立に、下記式のいずれかで表される基である。
R10は、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、炭素数2〜50のアルキニル基、炭素数1〜50のアルコキシ基、炭素数1〜50のチオアルキル基又は炭素数1〜50のチオアルコキシ基である。
R11は、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、又は炭素数2〜50のアルキニル基である。
p1は0〜3の整数である。
p2は0〜5の整数である。
p3は0〜7の整数である。
Ar 1 and Ar 2 may be groups other than the thiophenyl group substituted with an alkyl group having 1 to 30 carbon atoms among the above groups.
Ar 1 and Ar 2 are preferably each independently a group represented by any one of the following formulae.
R 10 is an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, an alkynyl group having 2 to 50 carbon atoms, an alkoxy group having 1 to 50 carbon atoms, a thioalkyl group having 1 to 50 carbon atoms, or carbon. A thioalkoxy group having a number of 1 to 50.
R 11 is an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, or an alkynyl group having 2 to 50 carbon atoms.
p1 is an integer of 0-3.
p2 is an integer of 0-5.
p3 is an integer of 0-7.
Ar1及びAr2は、好ましくは、それぞれ独立に下記式のいずれかで表される。
X及びYは、好ましくは、それぞれ独立に硫黄原子である。
R10は、好ましくは、炭素数8〜24のアルキル基又は炭素数8〜24のアルコキシ基である。
R11は、好ましくは、8〜24のアルキル基である。
p1及びp2は、好ましくは0又は1である。
X and Y are preferably each independently a sulfur atom.
R 10 is preferably an alkyl group having 8 to 24 carbon atoms or an alkoxy group having 8 to 24 carbon atoms.
R 11 is preferably an 8-24 alkyl group.
p1 and p2 are preferably 0 or 1.
Ra及びRbは、好ましくは、それぞれ独立に、−Sn(Rc)3であり、Rcがノルマルブチル基であると好ましい。
ポリマーを重合する際にモノマーの純度は非常に重要である。Ra及びRbがメチル基である場合は弱酸、弱塩基でただちに脱離してしまうため、高い純度が得られない。そこでRa及びRbは、−SnBu3とすることで比較的安定に取り扱え、高い純度が得られるため重合度が高い良質なポリマーが得られる。
R a and R b are preferably each independently —Sn (R c ) 3 , and R c is preferably a normal butyl group.
The monomer purity is very important when polymerizing the polymer. When R a and R b are methyl groups, they are eliminated immediately with a weak acid or a weak base, so that high purity cannot be obtained. Therefore R a and R b are handled relatively stable by the -SnBu 3, the degree of polymerization for high purity can be obtained a high quality polymer is obtained.
本発明のモノマーは、後述する実施例に記載の方法で製造することができる。 The monomer of this invention can be manufactured by the method as described in the Example mentioned later.
以下、上記式における各基について説明する。
本明細書において、芳香族炭化水素環は、単環の芳香族炭化水素環、複数の炭化水素環が縮合した縮合芳香族炭化水素環を含む。アリール基(1価の芳香族炭化水素環基)及びアリーレン基(2価の芳香族炭化水素環基)も同様である。
複素芳香族環は、単環の複素芳香族環、複数の複素芳香族環が縮合した縮合複素芳香族環、及び芳香族炭化水素環と複素芳香族環とが縮合した縮合複素芳香族環を含む。ヘテロアリール基(1価の複素芳香族環基)及びヘテロアリーレン基(2価の複素芳香族環基)も同様である。
Hereinafter, each group in the above formula will be described.
In this specification, the aromatic hydrocarbon ring includes a monocyclic aromatic hydrocarbon ring and a condensed aromatic hydrocarbon ring in which a plurality of hydrocarbon rings are condensed. The same applies to an aryl group (monovalent aromatic hydrocarbon ring group) and an arylene group (divalent aromatic hydrocarbon ring group).
The heteroaromatic ring includes a monocyclic heteroaromatic ring, a condensed heteroaromatic ring in which a plurality of heteroaromatic rings are condensed, and a condensed heteroaromatic ring in which an aromatic hydrocarbon ring and a heteroaromatic ring are condensed. Including. The same applies to a heteroaryl group (a monovalent heteroaromatic ring group) and a heteroarylene group (a divalent heteroaromatic ring group).
本発明において、水素とは、中性子数が異なる同位体、即ち、軽水素(protium)、重水素(deuterium)、及び三重水素(tritium)を包含する。 In the present invention, hydrogen includes isotopes having different numbers of neutrons, that is, light hydrogen (protium), deuterium (deuterium), and tritium (tritium).
アルキル基は、直鎖状または分岐状のものを含み、このようなアルキル基としては、炭素数1〜30(好ましくは炭素数6〜25、より好ましくは炭素数8〜15)のものが挙げられ、例えば、メチル基、エチル基、プロピル基、イソプロピル基、n−ブチル基、s−ブチル基、イソブチル基、t−ブチル基、n−ペンチル基、n−ヘキシル基、n−ヘプチル基、n−オクチル基、2−エチルヘキシル基、2−ブチルオクチル基、2−ヘキシルデシル基、2−オクチルドデシル、2−デシルテトラデシル基、3−ブチルノニル基等が挙げられる。
中でもn−ヘキシル基、n−オクチル基、2−エチルヘキシル基、2−ブチルオクチル基、2−ヘキシルデシル基、2−デシルテトラデシル基、3−ブチルノニル基が好ましい。
分岐したアルキル基としては、上記のうち分岐したものが挙げられる。
Alkyl groups include linear or branched ones, and examples of such alkyl groups include those having 1 to 30 carbon atoms (preferably 6 to 25 carbon atoms, more preferably 8 to 15 carbon atoms). For example, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, s-butyl group, isobutyl group, t-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, n Examples include -octyl group, 2-ethylhexyl group, 2-butyloctyl group, 2-hexyldecyl group, 2-octyldodecyl, 2-decyltetradecyl group, 3-butylnonyl group and the like.
Of these, n-hexyl group, n-octyl group, 2-ethylhexyl group, 2-butyloctyl group, 2-hexyldecyl group, 2-decyltetradecyl group and 3-butylnonyl group are preferable.
Examples of the branched alkyl group include those branched above.
アルケニル基としては、炭素数2〜20(好ましくは炭素数2〜10)のものが挙げられ、ビニル基、アリル基、1−ブテニル基、2−ブテニル基、3−ブテニル基、1,3−ブタンジエニル基、1−メチルビニル基、1−メチルアリル基、1,1−ジメチルアリル基、2−メチルアリル基、1,2−ジメチルアリル基等が挙げられる。
分岐したアルケニル基としては、上記のうち分岐したものが挙げられる。
Examples of the alkenyl group include those having 2 to 20 carbon atoms (preferably 2 to 10 carbon atoms), such as vinyl group, allyl group, 1-butenyl group, 2-butenyl group, 3-butenyl group, 1,3- Examples include butanedienyl group, 1-methylvinyl group, 1-methylallyl group, 1,1-dimethylallyl group, 2-methylallyl group, 1,2-dimethylallyl group and the like.
Examples of branched alkenyl groups include those branched above.
アルキニル基としては、炭素数2〜20(好ましくは炭素数2〜10)のものが挙げられ、プロパルギル基、3−ペンチニル基等が挙げられる。 Examples of the alkynyl group include those having 2 to 20 carbon atoms (preferably 2 to 10 carbon atoms), such as propargyl group and 3-pentynyl group.
アルコキシ基は、RO−と表され、Rとして上記のアルキル基が挙げられる。
チオアルキル基は、RS−と表され、Rとして上記のアルキル基が挙げられる。
チオアルコキシ基は、ROS−と表され、Rとして上記のアルキル基が挙げられる。
The alkoxy group is represented as RO-, and examples of R include the above alkyl groups.
A thioalkyl group is represented as RS-, and examples of R include the alkyl groups described above.
The thioalkoxy group is represented as ROS-, and examples of R include the above alkyl groups.
アリール基としては、環形成炭素数6〜30(好ましくは6〜18)のものが挙げられ、具体的に、フェニル基、ナフチル基、アントラセニル基、フェナントリル基、ピレニル基、クリセニル基、ビフェニル基、ターフェニル基、クォーターフェニル基、フルオランテニル基、トリフェニレニル基、フルオレニル基、スピロフルオレニル基、9,9−ジフェニルフルオレニル基、9,9’−スピロビ[9H−フルオレン]−2−イル基(スピロビフルオレニル基)、9,9−ジメチルフルオレニル基、ベンゾ[c]フェナントレニル基、ベンゾ[a]トリフェニレニル基、ナフト[1,2−c]フェナントレニル基、ナフト[1,2−a]トリフェニレニル基、ジベンゾ[a,c]トリフェニレニル基、ベンゾ[b]フルオランテニル基等が挙げられ、フェニル基、ナフチル基、フェナントリル基、ビフェニル基、ターフェニル基、フルオランテニル基、トリフェニレニル基、フルオレニル基、スピロビフルオレニル基が好ましい。
アリーレン基及び芳香族炭化水素環としては、上記に対応するものが挙げられる。
Examples of the aryl group include those having 6 to 30 (preferably 6 to 18) ring-forming carbon atoms. Specifically, a phenyl group, a naphthyl group, an anthracenyl group, a phenanthryl group, a pyrenyl group, a chrysenyl group, a biphenyl group, Terphenyl group, quarterphenyl group, fluoranthenyl group, triphenylenyl group, fluorenyl group, spirofluorenyl group, 9,9-diphenylfluorenyl group, 9,9'-spirobi [9H-fluoren] -2-yl Group (spirobifluorenyl group), 9,9-dimethylfluorenyl group, benzo [c] phenanthrenyl group, benzo [a] triphenylenyl group, naphtho [1,2-c] phenanthrenyl group, naphtho [1,2 -A] triphenylenyl group, dibenzo [a, c] triphenylenyl group, benzo [b] fluoranthenyl group, etc. A phenyl group, a naphthyl group, a phenanthryl group, a biphenyl group, a terphenyl group, a fluoranthenyl group, a triphenylenyl group, a fluorenyl group, and a spirobifluorenyl group are preferable.
Examples of the arylene group and the aromatic hydrocarbon ring include those corresponding to the above.
ヘテロアリール基(複素芳香族環基)としては、環形成原子数5〜30(好ましくは5〜18)のものが挙げられ、具体的に、チオフェン環、チエノチオフェン環、フラン環、ピロール環、イソインドール環、ベンゾフラン環、イソベンゾフラン環、ベンゾチオフェン環、ジベンゾチオフェン環、ベンゾシロール環、ジベンゾシロール環、イソキノリン環、キノキサリン環、フェナントリジン環、フェナントロリン環、フェノキサジン環、フェノチアジン環、フェノキサチイン環、ピリジン環、ピラジン環、ピリミジン環、ピリダジン環、トリアジン環、インドール環、キノリン環、アクリジン環、ピロリジン環、ジオキサン環、ピペリジン環、モルフォリン環、ピペラジン環、フラン環、チオフェン環、キナゾリン環、カルバゾール環、オキサゾール環、オキサジアゾール環、ベンゾオキサゾール環、チアゾール環、チアジアゾール環、ベンゾチアゾール環、トリアゾール環、イミダゾール環、ベンゾイミダゾール環、ピラン環、ジベンゾフラン環、ベンゾ[c]ジベンゾフラン環及びこれらの誘導体から形成される基等が挙げられ、チオフェン環、フラン環、ピロール環、ジベンゾフラン環、ジベンゾチオフェン環及びこれらの誘導体から形成される基が好ましい。
ヘテロアリーレン基及び複素芳香族環としては、上記に対応するものが挙げられる。
Examples of the heteroaryl group (heteroaromatic ring group) include those having 5 to 30 ring atoms (preferably 5 to 18), and specifically include a thiophene ring, a thienothiophene ring, a furan ring, a pyrrole ring, Isoindole ring, benzofuran ring, isobenzofuran ring, benzothiophene ring, dibenzothiophene ring, benzosilol ring, dibenzosilol ring, isoquinoline ring, quinoxaline ring, phenanthridine ring, phenanthroline ring, phenoxazine ring, phenothiazine ring, phenoxathiin Ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, triazine ring, indole ring, quinoline ring, acridine ring, pyrrolidine ring, dioxane ring, piperidine ring, morpholine ring, piperazine ring, furan ring, thiophene ring, quinazoline ring , Carbazole ring, o Formed from sazole ring, oxadiazole ring, benzoxazole ring, thiazole ring, thiadiazole ring, benzothiazole ring, triazole ring, imidazole ring, benzimidazole ring, pyran ring, dibenzofuran ring, benzo [c] dibenzofuran ring and their derivatives Groups formed from thiophene ring, furan ring, pyrrole ring, dibenzofuran ring, dibenzothiophene ring and derivatives thereof are preferable.
Examples of the heteroarylene group and the heteroaromatic ring include those corresponding to the above.
「置換若しくは無置換の」の置換基としては、上記各基の他、ハロゲン原子、直鎖又は分岐を有する炭素数1〜30のアルキルカルボニル基、直鎖又は分岐を有する炭素数1〜30のアルコキシカルボニル基、アミノ基、置換若しくは無置換のシリル基、シアノ基、ニトロ基等が挙げられる。これらの置換基はさらに置換されていてもよい。 As the substituent of “substituted or unsubstituted”, in addition to each of the above groups, a halogen atom, a linear or branched alkylcarbonyl group having 1 to 30 carbon atoms, a linear or branched carbon number having 1 to 30 carbon atoms. Examples include an alkoxycarbonyl group, an amino group, a substituted or unsubstituted silyl group, a cyano group, and a nitro group. These substituents may be further substituted.
ハロゲン原子としては、フッ素、塩素、臭素、ヨウ素等が挙げられる。
アルキルカルボニル基はRCO−と表され、Rとして上記のアルキル基が挙げられる。
アルコキシカルボニル基はROCO−と表され、Rとして上記のアルキル基が挙げられる。
アミノ基はR2N−と表され、Rとして上記のアルキル基が挙げられる。
置換シリル基はR3Si−と表され、Rとして上記のアルキル基が挙げられる。
Examples of the halogen atom include fluorine, chlorine, bromine and iodine.
The alkylcarbonyl group is represented as RCO-, and examples of R include the above alkyl groups.
The alkoxycarbonyl group is represented as ROCO-, and examples of R include the above alkyl groups.
The amino group is represented as R 2 N—, and examples of R include the above alkyl groups.
The substituted silyl group is represented as R 3 Si—, and examples of R include the above alkyl groups.
本発明のポリマーは、具体的には以下の例示化合物1−1〜12−7で表される。本発明のポリマーはこれらに限定されるものではない。
下記の例示化合物において、R',R'',R’’’はそれぞれ水素原子又は炭素数1〜30のアルキル基を示す。R’’’’は水素原子又はフッ素原子を示す。
The polymer of the present invention is specifically represented by the following exemplary compounds 1-1 to 12-7. The polymer of the present invention is not limited to these.
In the following exemplary compounds, R ′, R ″, and R ′ ″ each represent a hydrogen atom or an alkyl group having 1 to 30 carbon atoms. R ″ ″ represents a hydrogen atom or a fluorine atom.
また、これらポリマーの繰り返し単位において、アクセプター(式(10)におけるL1、Ar3及びL2の部位)ユニットが左右非対称である場合、ベンゾフラノチオフェン骨格からなるユニットとの結合は、アクセプターユニットを左右反転した場合を含む2つの態様が挙げられる。以下の例示ではこれらのうち1つの態様のみを示しているが、この構造に限定されることなく他方の態様、即ちアクセプターユニットを左右反転した態様も例示化合物として含む。 Further, in the repeating units of these polymers, when the acceptor (L 1 , Ar 3 and L 2 sites in formula (10)) unit is asymmetrical, the bond with the unit consisting of the benzofuranothiophene skeleton is the acceptor unit. There are two modes including the case where the left and right are reversed. In the following exemplification, only one of these embodiments is shown. However, the present invention is not limited to this structure, and the other embodiment, that is, an embodiment in which the acceptor unit is horizontally reversed is also included as an exemplary compound.
[有機薄膜太陽電池材料]
本発明のポリマーは、有機薄膜太陽電池材料に用いることができる。
本発明の有機薄膜太陽電池材料は、本発明のポリマーのみを含んでいてもよいし、本発明のポリマーに加えて他の有機太陽電池材料や他の成分を含んでいてもよい。また、本発明のポリマーのうち1種を含んでもよいし、2種以上を含んでもよい。
本発明の有機薄膜太陽電池材料は、後述する湿式成膜法等の塗布法によって有機太陽電池の層を形成することができる。
[Organic thin film solar cell materials]
The polymer of the present invention can be used for an organic thin film solar cell material.
The organic thin-film solar cell material of the present invention may contain only the polymer of the present invention, or may contain other organic solar cell materials and other components in addition to the polymer of the present invention. Moreover, 1 type may be included among the polymers of this invention, and 2 or more types may be included.
The organic thin film solar cell material of the present invention can form a layer of an organic solar cell by a coating method such as a wet film forming method described later.
上記の有機薄膜太陽電池材料は、電子受容体としての機能を有する化合物(電子受容性化合物)を含むと好ましい。
電子受容性化合物としては、例えば、オキサジアゾール誘導体、アントラキノジメタン及びその誘導体、ベンゾキノン及びその誘導体、ナフトキノン及びその誘導体、アントラキノン及びその誘導体、テトラシアノアントラキノジメタン及びその誘導体、フルオレノン誘導体、ジフェニルジシアノエチレン及びその誘導体、ジフェノキノン誘導体、8−ヒドロキシキノリン及びその誘導体の金属錯体、ポリキノリン及びその誘導体、ポリキノキサリン及びその誘導体、ポリフルオレン及びその誘導体、ペリレン及びその誘導体、フラーレン及びその誘導体、カーボンナノチューブ、2,9−ジメチル−4,7−ジフェニル−1,10−フェナントロリン等のフェナントロリン誘導体が挙げられ、とりわけフラーレン及びその誘導体が好ましい。
電子の移動度が高い材料が好ましく、さらに、電子親和力が小さい材料が好ましい。このように電子親和力の小さい材料を組み合わせることで、充分な開放端電圧(Joc)を実現することができる。
The organic thin-film solar cell material preferably contains a compound having a function as an electron acceptor (electron-accepting compound).
Examples of the electron-accepting compound include oxadiazole derivatives, anthraquinodimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives, tetracyanoanthraquinodimethane and its derivatives, fluorenone derivatives, Diphenyldicyanoethylene and derivatives thereof, diphenoquinone derivatives, metal complexes of 8-hydroxyquinoline and derivatives thereof, polyquinoline and derivatives thereof, polyquinoxaline and derivatives thereof, polyfluorene and derivatives thereof, perylene and derivatives thereof, fullerene and derivatives thereof, carbon nanotubes Phenanthroline derivatives such as 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, and fullerene and its derivatives are particularly preferable.
A material having a high electron mobility is preferable, and a material having a low electron affinity is preferable. A sufficient open-circuit voltage (Joc) can be realized by combining materials having a low electron affinity.
フラーレン及びその誘導体としては、C60、C70、C84及びその誘導体が挙げられる。フラーレン誘導体とは、フラーレンの少なくとも一部が修飾された化合物を表す。
フラーレン誘導体としては、例えば、下記式(I)〜(IV)で表される化合物が挙げられる。
Examples of fullerene derivatives include compounds represented by the following formulas (I) to (IV).
エステル構造を有する基としては、例えば、下記式(V)で表される基が挙げられる。
アルキル基、アリール基、ヘテロアリール基は上記で説明したものと同様である。
Examples of the group having an ester structure include a group represented by the following formula (V).
The alkyl group, aryl group, and heteroaryl group are the same as those described above.
C60の誘導体の具体例としては、以下のものが挙げられる。
C70の誘導体の具体例としては、以下のものが挙げられる。
電子受容体としての機能を有する無機化合物としては、n型特性の無機半導体化合物を挙げることができ、具体的には、n−Si、GaAs、CdS、PbS、CdSe、InP、Nb2O5、WO3、Fe2O3等のドーピング半導体及び化合物半導体、また、二酸化チタン(TiO2)、一酸化チタン(TiO)、三酸化二チタン(Ti2O3)等の酸化チタン、酸化亜鉛(ZnO)、酸化スズ(SnO2)、酸化モリブデン(MoO3)等の導電性酸化物が挙げられ、これらのうちの1種又は2種以上を組み合わせて用いてもよい。 As an inorganic compound having a function as an electron acceptor, an inorganic semiconductor compound having an n-type characteristic can be given. Specifically, n-Si, GaAs, CdS, PbS, CdSe, InP, Nb 2 O 5 , Doping semiconductors and compound semiconductors such as WO 3 and Fe 2 O 3 , titanium oxides such as titanium dioxide (TiO 2 ), titanium monoxide (TiO), and dititanium trioxide (Ti 2 O 3 ), zinc oxide (ZnO) ), Tin oxide (SnO 2 ), molybdenum oxide (MoO 3 ) and the like, and one or more of these may be used in combination.
[有機薄膜太陽電池]
本発明の有機薄膜太陽電池は、上記の有機薄膜太陽電池材料を活性層に用いる。本発明の有機薄膜太陽電池のセル構造は、一対の電極の間に上記活性層を含有する構造であれば特に限定されるものでない。
また、本発明の有機薄膜太陽電池は下記のいずれかの構成としてもよい。
「p層」、「p材料」とは、本発明のポリマーを含む層又は材料であり、「n層」、「n材料」とは、上記の電子受容性化合物を含む層又は材料である。
(1)下部電極/p層/n層/上部電極
(2)下部電極/p層/p材料とn材料の混合層/n層/上部電極
(3)下部電極/p材料とn材料の混合層/上部電極
上記(1)、(2)の各構成において、p層とn層を置換してもよい。
また、上記(1)、(2)、(3)の各構成において、必要に応じて電極と有機層の間にバッファー層を設けてもよい。例えば具体例として、上記構成(1)にバッファー層を設けた場合、下記構成を有する構造が挙げられる。
(4)下部電極/バッファー層/p層/n層/上部電極
(5)下部電極/p層/n層/バッファー層/上部電極
(6)下部電極/バッファー層/p層/n層/バッファー層/上部電極
[Organic thin film solar cells]
The organic thin film solar cell of this invention uses said organic thin film solar cell material for an active layer. The cell structure of the organic thin-film solar battery of the present invention is not particularly limited as long as it has a structure containing the active layer between a pair of electrodes.
Moreover, the organic thin film solar cell of this invention is good also as one of the following structures.
The “p layer” and “p material” are layers or materials containing the polymer of the present invention, and the “n layer” and “n material” are layers or materials containing the above-described electron accepting compounds.
(1) Lower electrode / p layer / n layer / upper electrode (2) Lower electrode / p layer / mixed layer of p material and n material / n layer / upper electrode (3) Lower electrode / mixture of p material and n material Layer / Upper Electrode In the above configurations (1) and (2), the p layer and the n layer may be replaced.
Moreover, in each structure of said (1), (2), (3), you may provide a buffer layer between an electrode and an organic layer as needed. For example, as a specific example, when a buffer layer is provided in the configuration (1), a structure having the following configuration can be given.
(4) Lower electrode / buffer layer / p layer / n layer / upper electrode (5) Lower electrode / p layer / n layer / buffer layer / upper electrode (6) Lower electrode / buffer layer / p layer / n layer / buffer Layer / Top electrode
また、上記構成(3)にバッファー層を設けた場合では、
(7)下部電極/バッファー層/p材料とn材料の混合層/上部電極
(8)下部電極/p材料とn材料の混合層/バッファー層/上部電極
(9)下部電極/バッファー層/p材料とn材料の混合層/バッファー層/上部電極
とする構成が挙げられる。
以下、各構成部材について簡単に説明する。
In the case where the buffer layer is provided in the configuration (3),
(7) Lower electrode / buffer layer / mixed layer of p material and n material / upper electrode (8) Lower electrode / mixed layer of p material and n material / buffer layer / upper electrode (9) Lower electrode / buffer layer / p A configuration in which a mixed layer of material and n material / buffer layer / upper electrode is used.
Hereinafter, each component will be briefly described.
[活性層]
本発明の有機薄膜太陽電池は、上記本発明の有機薄膜太陽電池材料を活性層に含むことが好ましい。
活性層の膜厚は、通常1nm〜100μmであり、好ましくは2nm〜1000nmであり、より好ましくは5nm〜500nmであり、さらに好ましくは20nm〜200nmである。
[Active layer]
The organic thin film solar cell of the present invention preferably includes the organic thin film solar cell material of the present invention in the active layer.
The thickness of the active layer is usually 1 nm to 100 μm, preferably 2 nm to 1000 nm, more preferably 5 nm to 500 nm, and further preferably 20 nm to 200 nm.
活性層には、本発明のポリマー及び上記電子受容性化合物以外に、任意の添加物を含んでいてもよい。添加物の例としては、1,8−ジオードオクタン(DIO)、1−クロロナフタレン、1,10−ジヨードデカン、1,4−ジヨードブタン、1,6−ジヨードヘキサン、1,8−オクタンジチオール等のハロゲン含有脂肪族炭化水素、ハロゲン含有芳香族炭化水素が挙げられる。
添加剤の配合量は、活性層形成用溶液中、0〜20重量%であることが好ましく、0〜10重量%であることがより好ましい。
The active layer may contain any additive other than the polymer of the present invention and the electron accepting compound. Examples of additives include 1,8-diode octane (DIO), 1-chloronaphthalene, 1,10-diiododecane, 1,4-diiodobutane, 1,6-diiodohexane, 1,8-octanedithiol, etc. Examples include halogen-containing aliphatic hydrocarbons and halogen-containing aromatic hydrocarbons.
The compounding amount of the additive is preferably 0 to 20% by weight, more preferably 0 to 10% by weight in the active layer forming solution.
活性層の形成は、スピンコーティング、ディップコート、キャスティング、ロールコート、フローコーティング、インクジェット等の湿式成膜法を適用することができる。この際、後述する任意の溶媒を使用することができる。 For the formation of the active layer, wet film forming methods such as spin coating, dip coating, casting, roll coating, flow coating, and ink jet can be applied. At this time, any solvent described later can be used.
[基板]
本発明の有機薄膜太陽電池は、通常、基板上に形成される。該基板は、機械的、熱的強度を有し、透明性を有するものが好ましい。例えば、ガラス基板及び透明性樹脂フィルムがある。透明性樹脂フィルムとしては、ポリエチレン、エチレン−酢酸ビニル共重合体、エチレン−ビニルアルコール共重合体、ポリプロピレン、ポリスチレン、ポリメチルメタアクリレート、ポリ塩化ビニル、ポリビニルアルコール、ポリビニルブチラール、ナイロン、ポリエーテルエーテルケトン、ポリサルホン、ポリエーテルサルフォン、テトラフルオロエチレン−パーフルオロアルキルビニルエーテル共重合体、ポリビニルフルオライド、テトラフルオロエチレン−エチレン共重合体、テトラフルオロエチレン−ヘキサフルオロプロピレン共重合体、ポリクロロトリフルオロエチレン、ポリビニリデンフルオライド、ポリエステル、ポリカーボネート、ポリウレタン、ポリイミド、ポリエーテルイミド、ポリイミド、ポリプロピレン等が挙げられる。
不透明な基板の場合には、反対の電極(即ち、基板から遠い方の電極)が透明電極又は半透明電極であることが好ましい。
[substrate]
The organic thin film solar cell of the present invention is usually formed on a substrate. The substrate is preferably one having mechanical and thermal strength and transparency. For example, there are a glass substrate and a transparent resin film. Transparent resin films include polyethylene, ethylene-vinyl acetate copolymer, ethylene-vinyl alcohol copolymer, polypropylene, polystyrene, polymethyl methacrylate, polyvinyl chloride, polyvinyl alcohol, polyvinyl butyral, nylon, polyether ether ketone. , Polysulfone, polyethersulfone, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, polyvinyl fluoride, tetrafluoroethylene-ethylene copolymer, tetrafluoroethylene-hexafluoropropylene copolymer, polychlorotrifluoroethylene, Polyvinylidene fluoride, polyester, polycarbonate, polyurethane, polyimide, polyetherimide, polyimide, polypropylene, etc. It is.
In the case of an opaque substrate, the opposite electrode (that is, the electrode far from the substrate) is preferably a transparent electrode or a translucent electrode.
[下部電極及び上部電極]
下部電極、上部電極の材料は特に制限はなく、金属、導電性高分子等を用いることができる。一対の電極のうち一方の電極の材料は仕事関数の小さい材料が好ましい。例えば、リチウム、ナトリウム、カリウム、ルビジウム、セシウム、マグネシウム、カルシウム、ストロンチウム、バリウム、アルミニウム、スカンジウム、バナジウム、亜鉛、イットリウム、インジウム、セリウム、サマリウム、ユーロピウム、テルビウム、イッテルビウム等の金属、及びそれらの金属のうちの2つ以上の金属の合金、又はそれらの金属のうちの1つ以上の金属と、金、銀、白金、銅、マンガン、チタン、コバルト、ニッケル、タングステン、錫のうちの1つ以上の金属との合金、グラファイト、グラファイト層間化合物等が用いられる。合金の例としては、マグネシウム−銀合金、マグネシウム−インジウム合金、マグネシウム−アルミニウム合金、インジウム−銀合金、リチウム−アルミニウム合金、リチウム−マグネシウム合金、リチウム−インジウム合金、カルシウム−アルミニウム合金が挙げられる。
[Lower and upper electrodes]
The material for the lower electrode and the upper electrode is not particularly limited, and metals, conductive polymers, and the like can be used. The material of one of the pair of electrodes is preferably a material having a low work function. For example, metals such as lithium, sodium, potassium, rubidium, cesium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, ytterbium, and those metals An alloy of two or more of these metals, or one or more of those metals and one or more of gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten, tin An alloy with metal, graphite, a graphite intercalation compound, or the like is used. Examples of the alloy include magnesium-silver alloy, magnesium-indium alloy, magnesium-aluminum alloy, indium-silver alloy, lithium-aluminum alloy, lithium-magnesium alloy, lithium-indium alloy, and calcium-aluminum alloy.
上記の透明電極又は半透明電極の材料としては、導電性の金属酸化物膜、半透明の金属薄膜等が挙げられる。具体的には、酸化インジウム、酸化亜鉛、酸化スズ、及びそれらの複合体であるインジウム・スズ・オキサイド(ITO)、インジウム・亜鉛・オキサイド等からなる導電性材料を用いて作製された膜、NESA(酸化錫)、金、白金、銀、銅が用いられ、ITO、インジウム・亜鉛・オキサイド、酸化スズが好ましい。電極の作製方法としては、真空蒸着法、スパッタリング法、イオンプレーティング法、メッキ法等が挙げられる。また、電極材料として、ポリアニリン及びその誘導体、ポリチオフェン及びその誘導体等の有機の透明導電膜を用いてもよい。 Examples of the material for the transparent electrode or the semitransparent electrode include a conductive metal oxide film and a semitransparent metal thin film. Specifically, a film formed using a conductive material made of indium oxide, zinc oxide, tin oxide, and indium tin oxide (ITO), indium zinc oxide, etc., which is a composite thereof, NESA (Tin oxide), gold, platinum, silver, and copper are used, and ITO, indium / zinc / oxide, and tin oxide are preferable. Examples of the method for producing the electrode include a vacuum deposition method, a sputtering method, an ion plating method, a plating method, and the like. Moreover, you may use organic transparent conductive films, such as polyaniline and its derivative (s), polythiophene, and its derivative (s) as an electrode material.
[バッファー層]
一般に、有機薄膜太陽電池は総膜厚が薄いことが多く、そのため上部電極と下部電極が短絡し易く、セル作製の歩留まりが低下することが多い。このような場合には、バッファー層を積層することによってこれを防止することが好ましい。
バッファー層に好ましい化合物としては、膜厚を厚くしても短絡電流が低下しないようにキャリア移動度が充分に高い化合物が好ましい。例えば、低分子化合物であれば下記に示すNTCDAに代表される芳香族環状酸無水物等が挙げられ、高分子化合物であればポリ(3,4−エチレンジオキシ)チオフェン:ポリスチレンスルホネート(PEDOT:PSS)、ポリアニリン:カンファースルホン酸(PANI:CSA)等に代表される公知の導電性高分子等が挙げられる。
In general, organic thin film solar cells often have a thin total film thickness, and therefore, the upper electrode and the lower electrode are likely to be short-circuited, and the yield of cell fabrication often decreases. In such a case, it is preferable to prevent this by laminating a buffer layer.
As a preferable compound for the buffer layer, a compound having sufficiently high carrier mobility is preferable so that the short-circuit current does not decrease even when the film thickness is increased. For example, if it is a low molecular compound, the aromatic cyclic acid anhydride represented by NTCDA shown below etc. will be mentioned, and if it is a high molecular compound, poly (3,4-ethylenedioxy) thiophene: polystyrene sulfonate (PEDOT: PSS), polyaniline: camphorsulfonic acid (PANI: CSA), and other known conductive polymers.
バッファー層には、励起子が電極まで拡散して失活してしまうのを防止する役割を持たせることも可能である。このように励起子阻止層としてバッファー層を挿入することは、高効率化のために有効である。励起子阻止層は陽極側、陰極側のいずれにも挿入することができ、両方同時に挿入することも可能である。この場合、励起子阻止層として好ましい材料としては、例えば有機エレクトロルミネッセンス素子(有機EL素子)用途で公知な正孔障壁層用材料又は電子障壁層用材料等が挙げられる。
正孔障壁層として好ましい材料は、イオン化ポテンシャルが充分に大きい化合物であり、電子障壁層として好ましい材料は、電子親和力が充分に小さい化合物である。具体的には有機EL素子用途で公知な材料であるバソクプロイン(BCP)、バソフェナントロリン(BPhen)等が陰極側の正孔障壁層材料として挙げられる。
A preferable material for the hole blocking layer is a compound having a sufficiently large ionization potential, and a preferable material for the electron blocking layer is a compound having a sufficiently small electron affinity. Specifically, bathocuproin (BCP), bathophenanthroline (BPhen), and the like, which are well-known materials for organic EL device applications, can be used as the cathode-side hole barrier layer material.
バッファー層には無機半導体化合物を用いてもよく、p−Si、n−Si、GaAs、CdS、PbS、CdTe、SiC、CdSe、InP、Nb2O5、WO3、Fe2O3等のドーピング半導体及び化合物半導体、また、二酸化チタン(TiO2)、一酸化チタン(TiO)、三酸化二チタン(Ti2O3)等の酸化チタン、酸化亜鉛(ZnO)、酸化スズ(SnO2)、酸化モリブデン(MoO3)等の導電性酸化物が挙げられる。 An inorganic semiconductor compound may be used for the buffer layer, and doping of p-Si, n-Si, GaAs, CdS, PbS, CdTe, SiC, CdSe, InP, Nb 2 O 5 , WO 3 , Fe 2 O 3, etc. Semiconductors and compound semiconductors, and titanium oxides such as titanium dioxide (TiO 2 ), titanium monoxide (TiO), dititanium trioxide (Ti 2 O 3 ), zinc oxide (ZnO), tin oxide (SnO 2 ), oxidation Examples thereof include conductive oxides such as molybdenum (MoO 3 ).
[有機薄膜太陽電池の製造方法]
本発明の有機薄膜太陽電池の各層の形成は、真空蒸着、スパッタリング、プラズマ、イオンプレーティング等の乾式成膜法やスピンコーティング、ディップコート、キャスティング、ロールコート、フローコーティング、インクジェット等の湿式成膜法を適用することができる。
[Method of manufacturing organic thin film solar cell]
The formation of each layer of the organic thin film solar cell of the present invention is performed by a dry film formation method such as vacuum deposition, sputtering, plasma, ion plating, or wet film formation such as spin coating, dip coating, casting, roll coating, flow coating, and ink jet. The law can be applied.
各層の膜厚は特に限定されないが、適切な膜厚に設定する。一般に有機薄膜の励起子拡散長は短いことが知られているため、膜厚が厚すぎると励起子がヘテロ界面に到達する前に失活してしまうため光電変換効率が低くなる。膜厚が薄すぎるとピンホール等が発生してしまうため、充分なダイオード特性が得られないため、変換効率が低下する。通常の膜厚は1nmから10μmの範囲が適しているが、5nmから0.2μmの範囲がさらに好ましい。 The thickness of each layer is not particularly limited, but is set to an appropriate thickness. Since it is generally known that the exciton diffusion length of an organic thin film is short, if the film thickness is too thick, the exciton is deactivated before reaching the heterointerface, resulting in low photoelectric conversion efficiency. If the film thickness is too thin, pinholes and the like are generated, so that sufficient diode characteristics cannot be obtained, resulting in a decrease in conversion efficiency. The normal film thickness is suitably in the range of 1 nm to 10 μm, but more preferably in the range of 5 nm to 0.2 μm.
乾式成膜法の場合、公知の抵抗加熱法が好ましく、混合層の形成には、例えば、複数の蒸発源からの同時蒸着による成膜方法が好ましい。さらに好ましくは、成膜時に基板温度を制御する。 In the case of the dry film forming method, a known resistance heating method is preferable, and for forming the mixed layer, for example, a film forming method by simultaneous vapor deposition from a plurality of evaporation sources is preferable. More preferably, the substrate temperature is controlled during film formation.
湿式成膜法の場合、各層を形成する材料を、適切な溶媒に溶解又は分散させて発光性有機溶液を調製し、薄膜を形成するが、任意の溶媒を使用できる。例えば、ジクロロメタン、ジクロロエタン、クロロホルム、四塩化炭素、テトラクロロエタン、トリクロロエタン、クロロベンゼン、ジクロロベンゼン、クロロトルエン等のハロゲン系炭化水素系溶媒や、ジブチルエーテル、テトラヒドロフラン、ジオキサン、アニソール等のエーテル系溶媒、メタノールやエタノール、プロパノール、ブタノール、ペンタノール、ヘキサノール、シクロヘキサノール、メチルセロソルブ、エチルセロソルブ、エチレングリコール等のアルコール系溶媒、ベンゼン、トルエン、キシレン、エチルベンゼン、ヘキサン、オクタン、デカン、テトラリン等の炭化水素系溶媒、酢酸エチル、酢酸ブチル、酢酸アミル等のエステル系溶媒等が挙げられる。なかでも、炭化水素系溶媒又はエーテル系溶媒が好ましい。また、これらの溶媒は単独で使用しても複数混合して用いてもよい。尚、使用可能な溶媒は、これらに限定されるものではない。 In the case of a wet film forming method, a material for forming each layer is dissolved or dispersed in an appropriate solvent to prepare a light-emitting organic solution to form a thin film, and any solvent can be used. For example, halogenated hydrocarbon solvents such as dichloromethane, dichloroethane, chloroform, carbon tetrachloride, tetrachloroethane, trichloroethane, chlorobenzene, dichlorobenzene, chlorotoluene, ether solvents such as dibutyl ether, tetrahydrofuran, dioxane, anisole, methanol, Alcohol solvents such as ethanol, propanol, butanol, pentanol, hexanol, cyclohexanol, methyl cellosolve, ethyl cellosolve, ethylene glycol, hydrocarbon solvents such as benzene, toluene, xylene, ethylbenzene, hexane, octane, decane, tetralin, Examples include ester solvents such as ethyl acetate, butyl acetate, and amyl acetate. Of these, hydrocarbon solvents or ether solvents are preferable. These solvents may be used alone or in combination. In addition, the solvent which can be used is not limited to these.
有機薄膜太陽電池のいずれの有機化合物層においても、成膜性向上、膜のピンホール防止等のため適切な樹脂や添加剤を使用してもよい。
使用の可能な樹脂としては、ポリスチレン、ポリカーボネート、ポリアリレート、ポリエステル、ポリアミド、ポリウレタン、ポリスルフォン、ポリメチルメタクリレート、ポリメチルアクリレート、セルロース等の絶縁性樹脂及びそれらの共重合体、ポリ−N−ビニルカルバゾール、ポリシラン等の光導電性樹脂、ポリチオフェン、ポリピロール等の導電性樹脂を挙げられる。
また、添加剤としては、酸化防止剤、紫外線吸収剤、可塑剤等が挙げられる。
In any organic compound layer of the organic thin film solar cell, an appropriate resin or additive may be used for improving the film formability and preventing pinholes in the film.
Usable resins include polystyrene, polycarbonate, polyarylate, polyester, polyamide, polyurethane, polysulfone, polymethyl methacrylate, polymethyl acrylate, cellulose and other insulating resins and copolymers thereof, poly-N-vinyl. Examples thereof include photoconductive resins such as carbazole and polysilane, and conductive resins such as polythiophene and polypyrrole.
Examples of the additive include an antioxidant, an ultraviolet absorber, and a plasticizer.
[装置等]
本発明の有機薄膜太陽電池は、時計、携帯電話及びモバイルパソコン等の各種装置、電化製品等の電源又は補助電源として使用できる。充電機能のある二次電池と組み合わせ、暗所においても使用可能とし、適用範囲を拡げることも可能である。
[Equipment etc.]
The organic thin film solar cell of the present invention can be used as a power source or an auxiliary power source for various devices such as watches, mobile phones, and mobile personal computers, and electrical appliances. Combined with a secondary battery with a charging function, it can be used in the dark, and the application range can be expanded.
以下、本発明を実施例を用いて説明するが、本発明は下記実施例に限定されない。 EXAMPLES Hereinafter, although this invention is demonstrated using an Example, this invention is not limited to the following Example.
[モノマーの合成]
実施例1(モノマーA−4−1の合成)
モノマーA−4−1を下記合成スキームに従って製造した。
Example 1 (Synthesis of Monomer A-4-1)
Monomer A-4-1 was prepared according to the following synthesis scheme.
(1)化合物A−1の合成
500mLフラスコに滴下ロートを装着し、3−フランカルボン酸(670mmol、75g)及びジクロロメタン300mLを入れ室温で撹拌し、塩化チオニル(737mmol、88g、1.1eq)を滴下した。12時間反応後、反応溶液をアイスバスにて5℃に冷却し、ジエチルアミン(1.0mol、73g、1.5eq)を滴下した。1時間後、反応溶液をろ過し、エバポレーターを用いてろ液から溶媒を除去した。得られた茶色の溶液を減圧蒸留にて精製し黄色オイルA−1(94g、収率84%)を得た。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ7.71(1H、d)、7.42(1H、d)、6.59(1H、s)、3.48(4H、q)、1.22(6H、t)
(1) Synthesis of Compound A-1 A 500 mL flask was equipped with a dropping funnel, 3-furancarboxylic acid (670 mmol, 75 g) and 300 mL of dichloromethane were added and stirred at room temperature, and thionyl chloride (737 mmol, 88 g, 1.1 eq) was added. It was dripped. After the reaction for 12 hours, the reaction solution was cooled to 5 ° C. with an ice bath, and diethylamine (1.0 mol, 73 g, 1.5 eq) was added dropwise. After 1 hour, the reaction solution was filtered, and the solvent was removed from the filtrate using an evaporator. The resulting brown solution was purified by distillation under reduced pressure to obtain yellow oil A-1 (94 g, yield 84%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 7.71 (1H, d), 7.42 (1H, d), 6.59 (1H, s), 3.48 (4H, q), 1. 22 (6H, t)
(2)化合物A−2の合成
500mLフラスコに化合物A−1(119mmol、20g)を入れて、真空ポンプで系内を減圧にして、窒素置換を行なった。THF150mLを入れて撹拌して、−68℃下で1.6Mのn−BuLiヘキサン溶液(119mmol、74mL、1.0eq)を滴下した。滴下15分後に−68℃下で3−チオフェンアルデヒド(119mmol、13.3g、1.0eq)を滴下し−68℃で2時間撹拌した。さらに−68℃下で1.6Mのn−BuLiヘキサン溶液(119mmol、72mL、1.0eq)を滴下し、ゆっくりと室温に戻し2時間撹拌した。次に反応溶液に酢酸50ml、エタノール20mlを加え10分撹拌した。この溶液を濃縮し、析出した固体をろ過し黄色固体A−2(6.3g、収率26%)を得た。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ7.71(1H、d)、7.67(1H、d)、7.62(1H、d)、6.95(1H、d)
(2) Synthesis of Compound A-2 Compound A-1 (119 mmol, 20 g) was placed in a 500 mL flask, and the inside of the system was depressurized with a vacuum pump to perform nitrogen substitution. 150 mL of THF was added and stirred, and 1.6M n-BuLi hexane solution (119 mmol, 74 mL, 1.0 eq) was added dropwise at −68 ° C. 15 minutes after dropping, 3-thiophenaldehyde (119 mmol, 13.3 g, 1.0 eq) was added dropwise at −68 ° C., and the mixture was stirred at −68 ° C. for 2 hours. Further, 1.6M n-BuLi hexane solution (119 mmol, 72 mL, 1.0 eq) was added dropwise at −68 ° C., and the mixture was slowly returned to room temperature and stirred for 2 hours. Next, 50 ml of acetic acid and 20 ml of ethanol were added to the reaction solution and stirred for 10 minutes. The solution was concentrated, and the precipitated solid was filtered to obtain a yellow solid A-2 (6.3 g, yield 26%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 7.71 (1H, d), 7.67 (1H, d), 7.62 (1H, d), 6.95 (1H, d)
(3)化合物A−0−1の合成
500mLフラスコにチオフェン(119mmol、10g)を入れて、減圧にして窒素置換を行った後、テトラヒドロフラン(THF)240mLを入れて室温で撹拌した。−78℃に冷却して、1.6Mのn−ブチル(n−Bu)Liヘキサン溶液(119mmol、74mL)を20分で滴下し、−78℃で2時間反応させた。次いで、−78℃で2−エチルヘキシルブロマイド(119mmol、23g)のTHF20mL溶液を滴下した。滴下後、室温に戻しながら4時間、還流下で7時間反応させた。
得られた反応溶液からエバポレーターを用いて溶媒を除去後、シリカカラムクロマトグラフィ(ヘキサンのみ)にて精製し、更に減圧蒸留にて化合物A−0−1の無色透明オイルを得た(9.6g、収率41%)。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、テトラメチルシラン(TMS))δ7.10(1H、dd)、6.90(1H、t)、6.75(1H、dd)、2.80(2H、d)、1.60−1.62(1H、m)、1.20−1.40(8H、m)、0.84−0.91(6H、m)
(3) Synthesis of Compound A-0-1 Thiophene (119 mmol, 10 g) was placed in a 500 mL flask, and the atmosphere was replaced with nitrogen under reduced pressure. Then, 240 mL of tetrahydrofuran (THF) was added and stirred at room temperature. After cooling to −78 ° C., 1.6 M n-butyl (n-Bu) Li hexane solution (119 mmol, 74 mL) was added dropwise over 20 minutes, and the mixture was reacted at −78 ° C. for 2 hours. Then, a 20 mL THF solution of 2-ethylhexyl bromide (119 mmol, 23 g) was added dropwise at −78 ° C. After dropping, the mixture was reacted for 4 hours while returning to room temperature and for 7 hours under reflux.
After removing the solvent from the obtained reaction solution using an evaporator, the residue was purified by silica column chromatography (hexane only), and further a colorless transparent oil of compound A-0-1 was obtained by distillation under reduced pressure (9.6 g, Yield 41%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , tetramethylsilane (TMS)) δ 7.10 (1H, dd), 6.90 (1H, t), 6.75 (1H, dd), 2.80 (2H, d), 1.60-1.62 (1H, m), 1.20-1.40 (8H, m), 0.84-0.91 (6H, m)
(4)化合物A−3−1の合成
500mLフラスコに化合物A−0−1(51.0mmol、10g)を入れて、真空ポンプで系内を減圧にして、窒素置換を行なった。THF100mLを入れて撹拌して、0℃下で1.6Mのn−BuLiヘキサン溶液(51.0mmol、32mL)を滴下した。滴下後、60℃で2時間加熱した。一旦、反応溶液を放冷し、A−2(18.9mmol、3.9g)を入れ、還流下で4時間反応させた。次いで、室温下で塩化スズ(II)二水和物(147mmol、34g)の10%塩酸70mL溶液を添加して、2時間反応させた。
(4) Synthesis of Compound A-3-1 Compound A-0-1 (51.0 mmol, 10 g) was placed in a 500 mL flask, and the inside of the system was decompressed with a vacuum pump to perform nitrogen substitution. THF (100 mL) was added and stirred, and 1.6 M n-BuLi hexane solution (51.0 mmol, 32 mL) was added dropwise at 0 ° C. After dripping, it heated at 60 degreeC for 2 hours. Once the reaction solution was allowed to cool, A-2 (18.9 mmol, 3.9 g) was added and reacted under reflux for 4 hours. Then, a solution of tin (II) chloride dihydrate (147 mmol, 34 g) in 10% hydrochloric acid at 70 mL was added at room temperature and reacted for 2 hours.
得られた反応溶液にイオン交換水100mLで2回洗浄した。有機層の溶媒を除去し、得られた濃褐色オイルをシリカゲルカラムクロマトグラフィ(ヘキサン)に通し、精製した。黄色オイルとして化合物A−3−1を得た(8.4g、収率79%)。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ7.88(1H、d)、7.74(1H、d)、7.48(1H、d)、7.44(1H、d)、7.42(1H、d)、7.18(1H、d)、6.89(1H、t)、2.85(4H、d)、1.68(2H、m)、1.34−1.45(16H、m)、0.89−0.96(12H、m)
The resulting reaction solution was washed twice with 100 mL of ion exchange water. The solvent of the organic layer was removed, and the resulting dark brown oil was purified by passing through silica gel column chromatography (hexane). Compound A-3-1 was obtained as a yellow oil (8.4 g, yield 79%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 7.88 (1H, d), 7.74 (1H, d), 7.48 (1H, d), 7.44 (1H, d), 7. 42 (1H, d), 7.18 (1H, d), 6.89 (1H, t), 2.85 (4H, d), 1.68 (2H, m), 1.34-1.45 (16H, m), 0.89-0.96 (12H, m)
(5)モノマーA−4−1の合成
100mLフラスコに化合物A−3−1(7.10mmol、4.0g)を入れて、減圧にして窒素置換を行った後、THF70mlを入れた。−68℃下で1.6Mのn−BuLiヘキサン溶液(14.9mmol、9.3mL)を滴下し、−68℃から室温までゆっくりと昇温させた。次に−68℃下でトリブチルスズクロリド(14.9mmol、4.8g)を入れ室温までゆっくりと昇温させた。反応溶液に飽和塩化アンモニウム水溶液50mLを加え撹拌後、ヘキサン50mLで抽出を行い、さらに飽和食塩水50mLで2回有機層を洗浄した。有機層を硫酸マグネシウムで乾燥し、溶媒除去後得られた残渣をシリカゲルカラムクロマトグラフィ(ヘキサンのみ)で精製してモノマーA−4−1の黄色オイルを得た(7.9g、収率98%)。尚、カラムに用いたシリカゲルは、ヘキサン:トリエチルアミン=8:2の混合溶液に20分浸漬し、ヘキサンで十分洗浄したものを用いた。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ8.00(1H、d)、7.51(1H、d)、7.47(1H、d)、7.28(1H、s)、6.89(2H、t)、2.86(4H、d)、1.55−1.75(14H、m)、1.25−1.50(40H、m)、1.12−1.20(12H、m)、0.82−0.98(36H、m)
(5) Synthesis of Monomer A-4-1 Compound A-3-1 (7.10 mmol, 4.0 g) was placed in a 100 mL flask and the atmosphere was replaced with nitrogen under reduced pressure, and then 70 ml of THF was added. A 1.6M n-BuLi hexane solution (14.9 mmol, 9.3 mL) was added dropwise at −68 ° C., and the temperature was slowly raised from −68 ° C. to room temperature. Next, tributyltin chloride (14.9 mmol, 4.8 g) was added at −68 ° C., and the temperature was slowly raised to room temperature. 50 mL of saturated aqueous ammonium chloride solution was added to the reaction solution and stirred, followed by extraction with 50 mL of hexane, and the organic layer was washed twice with 50 mL of saturated brine. The organic layer was dried over magnesium sulfate, and the residue obtained after removing the solvent was purified by silica gel column chromatography (hexane only) to obtain a yellow oil of monomer A-4-1 (7.9 g, yield 98%). . The silica gel used for the column was immersed in a mixed solution of hexane: triethylamine = 8: 2 for 20 minutes and sufficiently washed with hexane.
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 8.00 (1H, d), 7.51 (1H, d), 7.47 (1H, d), 7.28 (1H, s), 6. 89 (2H, t), 2.86 (4H, d), 1.55-1.75 (14H, m), 1.25-1.50 (40H, m), 1.12-1.20 ( 12H, m), 0.82-0.98 (36H, m)
上記の(3)〜(5)の工程において、以下に示すようにAr−Rとして種々のものを用いることにより、異なるArのモノマーが得られる。具体的には、実施例2、3で示す通りである。
実施例2(モノマーA−4−2の合成)
モノマーA−4−2を下記合成スキームに従って製造した。
Example 2 (Synthesis of Monomer A-4-2)
Monomer A-4-2 was prepared according to the following synthesis scheme.
実施例1の(4)において、A−0−1の代わりにA−0−2(23.5mmol、5.9g)を用い、(5)においてA−3−1の代わりにA−3−2(6.07mmol、4.1g)を用いた他は実施例1と同様にしてモノマーA−4−2を合成した(7.45g、収率98%)。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ7.98(1H、s)、7.65(2H、d)、7.28(1H、s)、7.02(1H、s)、6.98(1H、s)、2.86(4H、d)、1.55−1.70(14H、m)、1.25−1.50(40H、m)、1.12−1.20(12H、m)、0.85−0.98(36H、m)
In Example 1 (4), A-0-2 (23.5 mmol, 5.9 g) was used instead of A-0-1, and in (5), A-3-1 was used instead of A-3-1. Monomer A-4-2 was synthesized in the same manner as in Example 1 except that 2 (6.07 mmol, 4.1 g) was used (7.45 g, yield 98%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 7.98 (1H, s), 7.65 (2H, d), 7.28 (1H, s), 7.02 (1H, s), 6. 98 (1H, s), 2.86 (4H, d), 1.55-1.70 (14H, m), 1.25-1.50 (40H, m), 1.12-1.20 ( 12H, m), 0.85-0.98 (36H, m)
実施例3(モノマーA−4−3の合成)
モノマーA−4−3を下記合成スキームに従って製造した。
Monomer A-4-3 was prepared according to the following synthesis scheme.
実施例1の(4)において、A−0−1の代わりにA−0−3(41.1mmol、7.4g)を用い、(5)においてA−3−1の代わりにA−3−3(5.65mmol、3.0g)を用いた他は実施例1と同様にしてモノマーA−4−3を合成した(5.95g、収率95%)。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ8.41(1H、s)、7.53(1H、s)、7.28(1H、d)、7.06(1H、d)、6.26(1H、d)、2.75(4H、d)、1.55−1.90(14H、m)、1.30−1.50(40H、m)、1.20−1.30(12H、m)、0.85−1.00(36H、m)
In (4) of Example 1, A-0-3 (41.1 mmol, 7.4 g) was used in place of A-0-1, and A-3- in place of A-3-1 in (5). Monomer A-4-3 was synthesized in the same manner as in Example 1 except that 3 (5.65 mmol, 3.0 g) was used (5.95 g, yield 95%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 8.41 (1H, s), 7.53 (1H, s), 7.28 (1H, d), 7.06 (1H, d), 6. 26 (1H, d), 2.75 (4H, d), 1.55-1.90 (14H, m), 1.30-1.50 (40H, m), 1.20-1.30 ( 12H, m), 0.85-1.00 (36H, m)
製造例1(モノマーBの合成)
モノマーBを下記合成スキームに従って製造した。
Monomer B was prepared according to the following synthesis scheme.
(1)化合物B−1の合成
500mLフラスコに3,4−チオフェンジカルボン酸(291mmol、50g)及び無水酢酸200mLを入れて還流下加熱反応させた。4時間反応後、反応溶液を減圧下で濃縮し、放冷後、ヘキサン200mLを加えた。析出してきた薄茶色結晶をろ別し、さらにヘキサンで洗浄し、減圧乾燥することにより、化合物B−1(43g、収率96%)を得た。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ8.08(2H、s)
(1) Synthesis of Compound B-1 3,4-thiophenedicarboxylic acid (291 mmol, 50 g) and 200 mL of acetic anhydride were placed in a 500 mL flask and reacted with heating under reflux. After reacting for 4 hours, the reaction solution was concentrated under reduced pressure, allowed to cool, and then 200 mL of hexane was added. The precipitated light brown crystals were separated by filtration, further washed with hexane, and dried under reduced pressure to obtain Compound B-1 (43 g, yield 96%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 8.08 (2H, s)
(2)化合物B−2の合成
500mLフラスコに化合物B−1(77.0mmol、11.9g)を入れて、減圧にして窒素置換した。ジメチルホルムアミド(DMF)120mLを入れて、n−オクチルアミン(83.9mmol、10.9g)を滴下し、さらに還流下で3時間反応させた。
得られた反応溶液に水360mLを加えて、沈殿してきた薄茶色の結晶をろ別した。ヘキサンで洗浄して乾燥させ、化合物B−2(15.8g、収率72%)を得た。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ8.44(1H、d)、7.92(1H、d)、7.01(1H、br)、3.44−3.49(2H、m)、1.63−1.67(3H、m)、1.27−1.30(10H、m)、0.86−0.89(3H、m)
(2) Synthesis of Compound B-2 Compound B-1 (77.0 mmol, 11.9 g) was placed in a 500-mL flask and purged with nitrogen under reduced pressure. 120 mL of dimethylformamide (DMF) was added, n-octylamine (83.9 mmol, 10.9 g) was added dropwise, and the mixture was further reacted for 3 hours under reflux.
To the obtained reaction solution, 360 mL of water was added, and the precipitated light brown crystals were separated by filtration. This was washed with hexane and dried to obtain Compound B-2 (15.8 g, yield 72%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 8.44 (1H, d), 7.92 (1H, d), 7.01 (1H, br), 3.44 to 3.49 (2H, m ), 1.63-1.67 (3H, m), 1.27-1.30 (10H, m), 0.86-0.89 (3H, m)
(3)化合物B−3の合成
300mLフラスコに化合物B−2(55.7mmol、15.8g)及び塩化チオニル70mL入れ、還流下で3時間反応させた。
氷を入れた1N水酸化ナトリウム水溶液500mL中に反応溶液を少しずつ投入すると、茶色の結晶が析出してきた。得られた結晶を塩化メチレン450mLに溶解させ、飽和食塩水200mLで洗浄後、有機層を硫酸マグネシウムで乾燥した。硫酸マグネシウムをろ別後、溶媒を除去し、化合物B−3(14.4g、収率97%)を得た。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ7.80(2H、s)、3.58−3.62(2H、m)、1.60−1.65(2H、m)、1.26−1.32(10H、m)、0.85−0.89(3H、m)
(3) Synthesis of Compound B-3 Compound B-2 (55.7 mmol, 15.8 g) and 70 mL of thionyl chloride were placed in a 300 mL flask and reacted under reflux for 3 hours.
When the reaction solution was poured little by little into 500 mL of 1N aqueous sodium hydroxide containing ice, brown crystals were precipitated. The obtained crystals were dissolved in 450 mL of methylene chloride, washed with 200 mL of saturated brine, and the organic layer was dried over magnesium sulfate. After magnesium sulfate was filtered off, the solvent was removed to obtain Compound B-3 (14.4 g, yield 97%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 7.80 (2H, s), 3.58-3.62 (2H, m), 1.60-1.65 (2H, m), 1.26 -1.32 (10H, m), 0.85-0.89 (3H, m)
(4)モノマーBの合成
500mLフラスコに化合物B−3(54.1mmol、14.4g)、硫酸83mL及びトリフルオロ酢酸270mLを入れて撹拌した。室温にてN−ブロモスクシンイミド(162.3mmol、28.9g)を少しずつ添加した。すべて添加終了後、遮光下、室温にて6.5時間反応させた。
氷でフラスコを冷却しながら、得られた反応溶液に水200mLを少しずつ加えて撹拌した。塩化メチレン400mLにて抽出し、有機層を飽和食塩水250mL、1N水酸化ナトリウム水溶液100mL、次いで水200mLで洗浄を行い、硫酸マグネシウムで乾燥した。得られた有機層をシリカカラムクロマトグラフィ(ヘキサン:塩化メチレン=7:3)で精製し、モノマーBの白色結晶を得た(15.2g、収率66%)。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ3.57−3.61(2H、m)、1.57−1.64(2H、m)、1.26−1.30(10H、m)、0.86−0.89(3H、m)
(4) Synthesis of Monomer B Compound B-3 (54.1 mmol, 14.4 g), 83 mL of sulfuric acid and 270 mL of trifluoroacetic acid were placed in a 500 mL flask and stirred. N-bromosuccinimide (162.3 mmol, 28.9 g) was added in portions at room temperature. After completion of the addition, the reaction was allowed to proceed at room temperature for 6.5 hours under light shielding.
While cooling the flask with ice, 200 mL of water was added little by little to the resulting reaction solution and stirred. Extraction was performed with 400 mL of methylene chloride, and the organic layer was washed with 250 mL of saturated brine, 100 mL of 1N aqueous sodium hydroxide solution and then with 200 mL of water, and dried over magnesium sulfate. The obtained organic layer was purified by silica column chromatography (hexane: methylene chloride = 7: 3) to obtain white crystals of monomer B (15.2 g, yield 66%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 3.57-3.61 (2H, m), 1.57-1.64 (2H, m), 1.26-1.30 (10H, m) , 0.86-0.89 (3H, m)
製造例2(モノマーC合成)
モノマーCを下記合成スキームに従って製造した。
Monomer C was prepared according to the following synthesis scheme.
(1)化合物C−1の合成
1000mLフラスコにトリフェニルホスフィン(268.3mmol、70.3g)、塩化メチレン400mLを入れ、室温で撹拌しながら、臭素(268.3mmol、13.8mL)を少しずつ添加した。次いで滴下ロートから2−ブチル−1−オクタノール(268.3mmol)を室温下、40分かけて滴下した。得られた赤褐色均一溶液をさらに室温で10時間反応させた。
反応溶液から溶媒を除去し、ヘキサン400mLを加えて、不溶物の結晶をろ別し、さらにヘキサン100mLで不溶物を洗浄した。ヘキサンを除去後、得られた黄色オイルをシリカゲルカラムクロマトグラフィ(ヘキサンのみ)で精製して無色透明オイルを得た(63.8g、収率95%)。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ3.45(2H、d)、1.58−1.60(1H、m)、1.20−1.40(16H、m)、0.87−0.92(6H、m)
(1) Synthesis of Compound C-1 Into a 1000 mL flask was added triphenylphosphine (268.3 mmol, 70.3 g) and 400 mL of methylene chloride, and bromine (268.3 mmol, 13.8 mL) was added little by little while stirring at room temperature. Added. Next, 2-butyl-1-octanol (268.3 mmol) was added dropwise from the dropping funnel over 40 minutes at room temperature. The obtained reddish brown uniform solution was further reacted at room temperature for 10 hours.
The solvent was removed from the reaction solution, 400 mL of hexane was added, insoluble crystals were filtered off, and the insoluble material was washed with 100 mL of hexane. After removing hexane, the obtained yellow oil was purified by silica gel column chromatography (hexane only) to obtain a colorless transparent oil (63.8 g, yield 95%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 3.45 (2H, d), 1.58-1.60 (1H, m), 1.20-1.40 (16H, m), 0.87 -0.92 (6H, m)
(2)化合物C−2の合成
300mLフラスコに削り状Mg(131.5mmol、3.2g)を入れて、反応系内を減圧にして窒素置換した。THF10mLを添加し、滴下ロートから室温にてC−1(l20mmol、29.8g)のTHF60mL溶液を1時間かけて滴下した。続いて1時間、還流下で反応させた。
一方、別の200mLフラスコにNiCl2(DPPP)([1,3−ビス(ジフェニルホスフィノ)プロパン]ニッケル(II)ジクロリド)(0.92mmol、0.49g)を入れて、窒素置換した後、THF40mL、3−ブロモチオフェン(92mmol、15g)入れて室温にて撹拌した。この溶液にA1−1から調製したGrignard試薬のTHF溶液を窒素下で入れて、6時間還流下で反応させた。
(2) Synthesis of Compound C-2 Shaved Mg (131.5 mmol, 3.2 g) was placed in a 300 mL flask, and the reaction system was depressurized and purged with nitrogen. THF (10 mL) was added, and a THF (60 mL) solution of C-1 (120 mmol, 29.8 g) was added dropwise from the dropping funnel at room temperature over 1 hour. Subsequently, the reaction was carried out under reflux for 1 hour.
On the other hand, after putting NiCl 2 (DPPP) ([1,3-bis (diphenylphosphino) propane] nickel (II) dichloride) (0.92 mmol, 0.49 g) into another 200 mL flask, 40 mL of THF and 3-bromothiophene (92 mmol, 15 g) were added and stirred at room temperature. To this solution, a THF solution of Grignard reagent prepared from A1-1 was placed under nitrogen and reacted under reflux for 6 hours.
得られた反応溶液の不溶物をろ別し、溶媒をエバポレーターを用いて除去後、ヘキサン200mL、水100mLで抽出して、有機層を硫酸ナトリウムで乾燥した。溶媒除去後得られた残渣をシリカゲルカラムクロマトグラフィ(ヘキサンのみ)で精製して化合物C−2の淡黄色オイルを得た(19.7g、収率85%)。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ7.22(1H、m)、6.88(2H、m)、2.56(2H、m)、1.61(1H、m)、1.18−1.35(16H、m)、0.83−0.91(6H、m)
Insoluble matter of the obtained reaction solution was filtered off, and the solvent was removed using an evaporator, followed by extraction with 200 mL of hexane and 100 mL of water, and the organic layer was dried over sodium sulfate. The residue obtained after removal of the solvent was purified by silica gel column chromatography (hexane only) to obtain a pale yellow oil of compound C-2 (19.7 g, yield 85%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 7.22 (1H, m), 6.88 (2H, m), 2.56 (2H, m), 1.61 (1H, m), 1. 18-1.35 (16H, m), 0.83-0.91 (6H, m)
(3)化合物C−3の合成
滴下ロートを装着した500mLフラスコ内を減圧にして窒素置換を行った。窒素下でTHF200mL、化合物C−2(59.2mmol、14.9g)を入れて、−78℃冷却下で1.6Mのn−BuLiヘキサン溶液(62.2mmol、38.9mL)を滴下した。−78℃で1時間反応させ、2−イソプロポキシ−4,4,5,5−テトラメチル−1,3,2−ジオキサボロラン(177.6mmol、36.2mL)を滴下した。滴下後、室温に戻しながら、5時間撹拌した。
反応溶液に飽和塩化アンモニウム水溶液50mLを加え撹拌後、酢酸エチル100mLで抽出を行い、さらに飽和食塩水100mLで有機層を洗浄した。有機層を硫酸ナトリウムで乾燥し、溶媒除去後得られた残渣をシリカゲルカラムクロマトグラフィ(ヘキサン:塩化メチレン=1:1)で精製して化合物C−3の無色半透明オイルを得た(17.9g、収率80%)。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ7.42(1H、s)、7.17(1H、s)、2.52−2.56(2H、m)、1.59−1.61(1H、m)、1.21−1.34(28H、m)、0.79−0.89(6H、m)
(3) Synthesis of Compound C-3 The inside of a 500 mL flask equipped with a dropping funnel was decompressed and replaced with nitrogen. Under nitrogen, 200 mL of THF and compound C-2 (59.2 mmol, 14.9 g) were added, and 1.6M n-BuLi hexane solution (62.2 mmol, 38.9 mL) was added dropwise under cooling at −78 ° C. The mixture was reacted at −78 ° C. for 1 hour, and 2-isopropoxy-4,4,5,5-tetramethyl-1,3,2-dioxaborolane (177.6 mmol, 36.2 mL) was added dropwise. After dropping, the mixture was stirred for 5 hours while returning to room temperature.
50 mL of saturated aqueous ammonium chloride solution was added to the reaction solution and stirred, followed by extraction with 100 mL of ethyl acetate, and the organic layer was washed with 100 mL of saturated brine. The organic layer was dried over sodium sulfate and the residue obtained after removing the solvent was purified by silica gel column chromatography (hexane: methylene chloride = 1: 1) to obtain a colorless translucent oil of compound C-3 (17.9 g). 80% yield).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 7.42 (1H, s), 7.17 (1H, s), 2.52-2.56 (2H, m), 1.59-1.61 (1H, m), 1.21-1.34 (28H, m), 0.79-0.89 (6H, m)
(4)化合物C−4の合成
500mLフラスコに4,7−ジヨード−5,6−ジフルオロ−2,1,3−ベンゾチアジアゾール(12.8mmol、5.5g)、Pd2dba3(トリス(ジベンジリデンアセトン)ジパラジウム(0))(0.404mmol、0.37g)、トリt−ブチルホスフィンテトラフルオロボレート(2.0mmol、0.58g)、リン酸カリウム(81mmol、17.2g)を入れて、系内を減圧にして窒素置換を行った。THF200mL、化合物C−3(27.0mmol、10.3g)及び水1.3mLを加えて還流下で7時間反応させた。
得られた反応溶液からエバポレーターを用いて溶媒を除去後、塩化メチレン400mL、飽和食塩水200mLで抽出し、有機層を硫酸ナトリウムで乾燥した。シリカカラムクロマトグラフィ(ヘキサンのみ)にて精製し、化合物C−4のオレンジ色結晶を得た(7.8g、収率90.1%)。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ8.10(2H、s)、7.19(2H、s)、2.62(4H、d)、1.69(2H、br)、1.27−1.31(32H)、0.86−0.91(12H、m)
(4) Synthesis of Compound C-4 In a 500 mL flask, 4,7-diiodo-5,6-difluoro-2,1,3-benzothiadiazole (12.8 mmol, 5.5 g), Pd 2 dba 3 (Tris (di Benzylideneacetone) dipalladium (0)) (0.404 mmol, 0.37 g), tri-t-butylphosphine tetrafluoroborate (2.0 mmol, 0.58 g), potassium phosphate (81 mmol, 17.2 g) The inside of the system was depressurized and replaced with nitrogen. 200 mL of THF, compound C-3 (27.0 mmol, 10.3 g) and 1.3 mL of water were added and reacted under reflux for 7 hours.
After removing the solvent from the obtained reaction solution using an evaporator, extraction was performed with 400 mL of methylene chloride and 200 mL of saturated brine, and the organic layer was dried over sodium sulfate. Purification by silica column chromatography (hexane only) gave orange crystals of compound C-4 (7.8 g, yield 90.1%).
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 8.10 (2H, s), 7.19 (2H, s), 2.62 (4H, d), 1.69 (2H, br), 1. 27-1.31 (32H), 0.86-0.91 (12H, m)
(5)モノマーCの合成
300mLフラスコに入れた化合物C−4(11.5mmol、7.8g)のTHF120mL溶液にN−ブロモスクシンイミド(25.5mmol、4.5g)を室温にて少しずつ添加した。すべて添加終了後、室温にて9時間反応させた。
得られた反応溶液からエバポレーターを用いて溶媒を除去後、シリカカラムクロマトグラフィ(ヘキサンのみ)にて2回精製し、モノマーCのオレンジ色結晶を得た(9.4g、収率97.7%)。
1H−NMRの測定結果を以下に示す。
1H−NMR(400MHz、CDCl3、TMS)δ7.94(2H、s)、2.60(4H、d)、1.76(2H、s)、1.27−1.31(32H、m)、0.85−0.91(12H、m)
(5) Synthesis of Monomer C N-bromosuccinimide (25.5 mmol, 4.5 g) was added little by little at room temperature to a 120 mL THF solution of compound C-4 (11.5 mmol, 7.8 g) placed in a 300 mL flask. . After completion of the addition, the reaction was allowed to proceed for 9 hours at room temperature.
The solvent was removed from the obtained reaction solution using an evaporator, and then purified twice by silica column chromatography (hexane only) to obtain orange crystals of monomer C (9.4 g, yield 97.7%). .
The measurement result of 1 H-NMR is shown below.
1 H-NMR (400 MHz, CDCl 3 , TMS) δ 7.94 (2H, s), 2.60 (4H, d), 1.76 (2H, s), 1.27-1.31 (32H, m ), 0.85-0.91 (12H, m)
[ポリマーの合成]
実施例4(ポリマー1の合成)
ポリマー1を下記合成スキームに従って製造した。
Example 4 (Synthesis of Polymer 1)
Polymer 1 was prepared according to the following synthesis scheme.
窒素雰囲気下、実施例1で得たモノマーA−4−1 2.07g(1.81mmol,1.0eq.)、製造例1で得たモノマーB 0.766g(1.81mmol,1.0eq.)、トリス(ジベンジリデンアセトン)ジパラジウム(0) 16mg(1.8×10−2mmol,Pd2%)、及びトリ(o−トリル)ホスフィン 55mg(1.8×10−1mmol,0.1eq.)を無水トルエン120mLに溶かし、140℃で24時間撹拌した。反応混合物にトリメチルフェニルスズ0.1mL(0.55mmol)を加えて、4時間還流し、続いてブロモベンゼン0.1mL(0.94mmol)を加えて4時間還流した。反応混合物をメタノール200mLに投入して生じた沈殿をろ別して濃紫色固体を得た。この固体をメタノール150mLで4時間、ヘキサン150mLで4時間、トルエン150mLで3時間、クロロベンゼン150mLで3時間、ソックスレー抽出した。クロロベンゼン抽出物を濃縮し、0.47gの高分子化合物1(濃紫色固体、31%)を得た。 Under a nitrogen atmosphere, 2.07 g (1.81 mmol, 1.0 eq.) Of the monomer A-4-1 obtained in Example 1, and 0.766 g (1.81 mmol, 1.0 eq.) Of the monomer B obtained in Production Example 1. ), Tris (dibenzylideneacetone) dipalladium (0) 16 mg (1.8 × 10 −2 mmol, Pd 2%), and tri (o-tolyl) phosphine 55 mg (1.8 × 10 −1 mmol, 0.1 eq) .) Was dissolved in 120 mL of anhydrous toluene and stirred at 140 ° C. for 24 hours. To the reaction mixture, 0.1 mL (0.55 mmol) of trimethylphenyltin was added and refluxed for 4 hours, and then 0.1 mL (0.94 mmol) of bromobenzene was added and refluxed for 4 hours. The reaction mixture was poured into 200 mL of methanol and the resulting precipitate was filtered off to obtain a dark purple solid. This solid was Soxhlet extracted with 150 mL of methanol for 4 hours, 150 mL of hexane for 4 hours, 150 mL of toluene for 3 hours, and 150 mL of chlorobenzene for 3 hours. The chlorobenzene extract was concentrated to obtain 0.47 g of polymer compound 1 (dark purple solid, 31%).
ポリマー1の高温GPCによる分子量測定を以下の条件で行ったところ、MW(重量平均分子量)が168,800、Mn(数平均分子量)が44,250、PDI(分散度)が3.82であった。
・カラム:TOSOH GMHHR−H(S)HT
・カラム温度:145℃
・溶離液:TCB(トリクロロベンゼン),1.0mL/min
・サンプル濃度:0.15重量/体積%
・打込量:160μL
When the molecular weight measurement by high temperature GPC of the polymer 1 was performed under the following conditions, the MW (weight average molecular weight) was 168,800, the Mn (number average molecular weight) was 44,250, and the PDI (dispersion degree) was 3.82. It was.
Column: TOSOH GMHHR-H (S) HT
Column temperature: 145 ° C
Eluent: TCB (trichlorobenzene), 1.0 mL / min
Sample concentration: 0.15 weight / volume%
・ Punching amount: 160μL
実施例5(ポリマー2の合成)
実施例4において、モノマーB(0.911mmol、1.04g)の代わりにモノマーC(0.911mmol、0.654g)を用いた他は実施例4と同様にしてポリマー2を合成した(0.73g、収率64%、MW:105,600、Mn:53,900、PDI:1.95)。
Example 5 (Synthesis of Polymer 2)
Polymer 2 was synthesized in the same manner as in Example 4 except that monomer C (0.911 mmol, 0.654 g) was used instead of monomer B (0.911 mmol, 1.04 g). 73 g, yield 64%, MW: 105,600, Mn: 53,900, PDI: 1.95).
実施例6(ポリマー3の合成)
実施例4において、モノマーA−4−1の代わりにモノマーA−4−2(0.866mmol、1.085g)を用いた他は実施例4と同様にしてポリマー3を合成した(0.75g、収率92%、MW(重量平均分子量):99,200、Mn(数平均分子量):26,500、PDI:3.74)。
Example 6 (Synthesis of Polymer 3)
A polymer 3 was synthesized in the same manner as in Example 4 except that the monomer A-4-2 (0.866 mmol, 1.085 g) was used instead of the monomer A-4-1 in Example 4 (0.75 g). Yield 92%, MW (weight average molecular weight): 99,200, Mn (number average molecular weight): 26,500, PDI: 3.74).
実施例7(ポリマー4の合成)
実施例4において、モノマーA−4−1の代わりにモノマーA−4−2(0.855mmol、1.07g)を用い、モノマーBの代わりにモノマーC(0.855mmol、0.831g)を用いた他は実施例4と同様にしてポリマー4を合成した(1.0g、収率87%、MW:97,900、Mn:55,800、PDI:1.75)。
Example 7 (Synthesis of Polymer 4)
In Example 4, monomer A-4-2 (0.855 mmol, 1.07 g) was used instead of monomer A-4-1 and monomer C (0.855 mmol, 0.831 g) was used instead of monomer B. The polymer 4 was synthesized in the same manner as in Example 4 (1.0 g, yield 87%, MW: 97,900, Mn: 55,800, PDI: 1.75).
実施例8(ポリマー5の合成)
実施例4において、モノマーA−4−1の代わりにモノマーA−4−3(1.22mmol、1.35g)を用いた他は実施例4と同様にしてポリマー5を合成した(0.85g、収率88%、MW:77,700、Mn:45,200、PDI:1.72)。
Example 8 (Synthesis of Polymer 5)
In Example 4, Polymer 5 was synthesized in the same manner as Example 4 except that Monomer A-4-3 (1.22 mmol, 1.35 g) was used instead of Monomer A-4-1 (0.85 g). 88%, MW: 77,700, Mn: 45,200, PDI: 1.72).
実施例9(ポリマー6の合成)
実施例4において、モノマーA−4−1の代わりにモノマーA−4−3(0.746mmol0.827g)を用い、モノマーBの代わりにモノマーC(0.746mmol、0.619g)を用いた他は実施例4と同様にしてポリマー6を合成した(0.88g、収率99%、MW:95,600、Mn:33,500、PDI:2.85)。
Example 9 (Synthesis of Polymer 6)
In Example 4, the monomer A-4-3 (0.746 mmol 0.827 g) was used instead of the monomer A-4-1 and the monomer C (0.746 mmol, 0.619 g) was used instead of the monomer B. Was synthesized in the same manner as in Example 4 (0.88 g, yield 99%, MW: 95,600, Mn: 33,500, PDI: 2.85).
[有機太陽電池の作成・評価]
実施例10〜15
実施例10〜15で用いた化合物を以下に示す。
Examples 10-15
The compounds used in Examples 10 to 15 are shown below.
(インクの作製)
p型半導体化合物としてポリマー1〜6、及びn型半導体化合物としてPC71BM(フェニルC71酪酸メチルエステル,アメリカンダイソース(ADS)社製,ADS71BFA)を、重量比が1:1となるように混合し、混合物が2.0重量%の濃度となるように窒素雰囲気中でクロロベンゼン溶媒に溶解させた。また、この溶液に1,8−ジヨードオクタン(5wt%)を添加した。
この溶液をホットスターラー上で80℃の温度にて1時間撹拌混合した。撹拌混合後の溶液を0.45μmのポリテトラフルオロエチレン(PTFE)フィルターで濾過することにより、インクを得た。
(Preparation of ink)
Polymers 1 to 6 as a p-type semiconductor compound, and PC71BM (phenyl C71 butyric acid methyl ester, manufactured by American Dice Source (ADS), ADS71BFA) as an n-type semiconductor compound are mixed so that the weight ratio is 1: 1. The mixture was dissolved in a chlorobenzene solvent in a nitrogen atmosphere so as to have a concentration of 2.0% by weight. In addition, 1,8-diiodooctane (5 wt%) was added to this solution.
This solution was stirred and mixed on a hot stirrer at a temperature of 80 ° C. for 1 hour. The solution after stirring and mixing was filtered through a 0.45 μm polytetrafluoroethylene (PTFE) filter to obtain an ink.
(有機太陽電池の作製:順構成の場合)
25mm×25mm×0.7mm厚のITO透明電極付きガラス基板をイソプロピルアルコール中で超音波洗浄を5分間行なった後、UVオゾン洗浄を30分間実施した。次に、PEDOT:PSS溶液(ヘレウス社製CleviosP VP AI4083)をスピンコートによりITO膜上に塗布し、大気中100℃で10分間加熱することにより、膜厚40nmのバッファー層を作成した。次に、上記のインクを窒素雰囲気中でスピンコートによりバッファー層上に塗布し、有機薄膜太陽電池の機能層を得た。機能層の膜厚は100nmであった。その後、真空蒸着機によりフッ化リチウム(LiF)を膜厚1nmで蒸着し、次いで、アルミニウム(Al)を膜厚100nmで蒸着することにより、有機薄膜太陽電池を作製した。面積は0.25cm2であった。
(Production of organic solar cells: in the case of forward configuration)
A glass substrate with an ITO transparent electrode having a thickness of 25 mm × 25 mm × 0.7 mm was subjected to ultrasonic cleaning in isopropyl alcohol for 5 minutes, and then UV ozone cleaning was performed for 30 minutes. Next, a PEDOT: PSS solution (CleviosP VP AI4083 manufactured by Heraeus Co., Ltd.) was applied onto the ITO film by spin coating, and heated at 100 ° C. for 10 minutes in the atmosphere to form a buffer layer having a thickness of 40 nm. Next, the above ink was applied on the buffer layer by spin coating in a nitrogen atmosphere to obtain a functional layer of an organic thin film solar cell. The film thickness of the functional layer was 100 nm. Thereafter, lithium fluoride (LiF) was vapor-deposited with a film thickness of 1 nm by a vacuum vapor deposition machine, and then aluminum (Al) was vapor-deposited with a film thickness of 100 nm to produce an organic thin film solar cell. The area was 0.25 cm 2 .
(有機太陽電池の作製:逆構成の場合)
25mm×25mm×0.7mm厚のITO透明電極付きガラス基板をイソプロピルアルコール中で超音波洗浄を5分間行なった後、UVオゾン洗浄を30分間実施した。次に、酸化亜鉛/イソプロピルアルコール溶液をスピンコートによりITO膜上に塗布し、大気中200℃で10分間加熱することにより、バッファー層を作成した。次に、上記のインクを窒素雰囲気中でスピンコートによりバッファー層上に塗布し、有機薄膜太陽電池の機能層を得た。機能層の膜厚は100nmであった。その後、真空蒸着機により酸化モリブデンを蒸着し、次いで、アルミニウム(Al)を膜厚100nmで蒸着することにより、有機薄膜太陽電池を作製した。面積は0.25cm2であった。
(Production of organic solar cells: reverse configuration)
A glass substrate with an ITO transparent electrode having a thickness of 25 mm × 25 mm × 0.7 mm was subjected to ultrasonic cleaning in isopropyl alcohol for 5 minutes, and then UV ozone cleaning was performed for 30 minutes. Next, a zinc oxide / isopropyl alcohol solution was applied onto the ITO film by spin coating, and heated at 200 ° C. in the atmosphere for 10 minutes to form a buffer layer. Next, the above ink was applied on the buffer layer by spin coating in a nitrogen atmosphere to obtain a functional layer of an organic thin film solar cell. The film thickness of the functional layer was 100 nm. Thereafter, molybdenum oxide was vapor-deposited with a vacuum vapor deposition machine, and then aluminum (Al) was vapor-deposited with a film thickness of 100 nm to produce an organic thin film solar cell. The area was 0.25 cm 2 .
(有機太陽電池の評価方法)
有機太陽電池に2mm角のメタルマスクを付け、照射光源としてエアマス(AM)1.5G、放射照度100mW/cm2のソーラシミュレータを用い、ソースメーター(ケイスレー社製,2400型)により、ITO電極とアルミニウム電極との間における電流−電圧特性を測定した。この測定結果から、開放電圧Voc(V)、短絡電流密度Jsc(mA/cm2)、形状因子FF、及び光電変換効率PCE(%)を算出した。結果を表1に示す。
ここで、開放電圧Vocとは電流値=0(mA/cm2)の際の電圧値であり、短絡電流密度Jscとは電圧値=0(V)の際の電流密度である。形状因子FFとは内部抵抗を表すファクターであり、最大出力をPmaxとすると次式で表される。
FF=Pmax/(Voc×Jsc)
また、光電変換効率PCEは、入射エネルギーをPinとすると次式で与えられる。
PCE=(Pmax/Pin)×100
=(Voc×Jsc×FF/Pin)×100
(Method for evaluating organic solar cells)
A 2 mm square metal mask is attached to the organic solar cell, a solar simulator with an air mass (AM) of 1.5 G and an irradiance of 100 mW / cm 2 is used as an irradiation light source, and an ITO electrode is connected with a source meter (Keisley, Model 2400). The current-voltage characteristic between the aluminum electrode was measured. From this measurement result, open circuit voltage Voc (V), short circuit current density Jsc (mA / cm 2 ), form factor FF, and photoelectric conversion efficiency PCE (%) were calculated. The results are shown in Table 1.
Here, the open circuit voltage Voc is a voltage value when the current value = 0 (mA / cm 2 ), and the short circuit current density Jsc is a current density when the voltage value = 0 (V). The form factor FF is a factor representing the internal resistance, and is represented by the following expression when the maximum output is Pmax.
FF = Pmax / (Voc × Jsc)
Further, the photoelectric conversion efficiency PCE is given by the following equation when the incident energy is Pin.
PCE = (Pmax / Pin) × 100
= (Voc × Jsc × FF / Pin) × 100
比較例1
p型半導体化合物として、非特許文献2に記載の下記のポリマー7を合成し用いた以外は実施例1と同様に有機太陽電池を作製し、評価した。結果を表1に示す。このポリマーの重量平均分子量は130,400、数平均分子量は325,00であった。
As a p-type semiconductor compound, an organic solar cell was prepared and evaluated in the same manner as in Example 1 except that the following polymer 7 described in Non-Patent Document 2 was synthesized and used. The results are shown in Table 1. This polymer had a weight average molecular weight of 130,400 and a number average molecular weight of 325,00.
比較例2,3
下記化合物の性能を特許文献1から引用する。素子の作製方法は本実施例と類似しており、ITO基板上にPEDOT/PSSを塗布し、その上にポリマーとPC71BMの混合液を塗布し、真空蒸着法によりAlを蒸着している。
性能等を表1に示す。
The performance of the following compounds is cited from Patent Document 1. The device fabrication method is similar to that of the present example. PEDOT / PSS is applied on an ITO substrate, a mixed solution of polymer and PC71BM is applied thereon, and Al is deposited by vacuum deposition.
Table 1 shows the performance and the like.
表1より、本発明のポリマーが変換効率に優れていることが分かる。 Table 1 shows that the polymer of this invention is excellent in conversion efficiency.
本発明の有機薄膜太陽電池は、時計、携帯電話及びモバイルパソコン等の各種装置、電化製品等の電源又は補助電源として使用できる。充電機能のある二次電池と組み合わせ、暗所においても使用可能とし、適用範囲を拡げることも可能である。 The organic thin film solar cell of the present invention can be used as a power source or an auxiliary power source for various devices such as watches, mobile phones, and mobile personal computers, and electrical appliances. Combined with a secondary battery with a charging function, it can be used in the dark, and the application range can be expanded.
Claims (17)
R3、R4は、それぞれ独立に、分岐した炭素数1〜30のアルキル基、分岐した炭素数2〜30のアルケニル基、又は分岐した炭素数2〜30のアルキニル基である。
X1、X2、X4及びX7は、それぞれ独立に、酸素原子、硫黄原子又はセレン原子である。
X3は、それぞれ独立に、酸素原子、硫黄原子、セレン原子又はN−R5である。
X5及びX6は、それぞれ独立に、酸素原子又は硫黄原子である。
R5及びR6、R7は、水素原子、炭素数1〜30のアルキル基、置換若しくは無置換の炭素数1〜30のアルコキシ基、置換若しくは無置換の環形成炭素数6〜20のアリール基、又は置換若しくは無置換の環形成原子数5〜20のヘテロアリール基である。
nは繰り返し数を表す。) The polymer containing the repeating unit represented by either of following formula (1)-(5).
X 1 , X 2 , X 4 and X 7 are each independently an oxygen atom, a sulfur atom or a selenium atom.
X 3 is each independently an oxygen atom, a sulfur atom, a selenium atom, or N—R 5 .
X 5 and X 6 are each independently an oxygen atom or a sulfur atom.
R 5, R 6 and R 7 are each a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 30 carbon atoms, a substituted or unsubstituted aryl group having 6 to 20 ring carbon atoms. Or a substituted or unsubstituted heteroaryl group having 5 to 20 ring atoms.
n represents the number of repetitions. )
x及びyは、それぞれ独立に、0以上の整数である。
nは繰り返し数を表す。
Ar1及びAr2は、それぞれ独立に、下記式のいずれかで表される基である。
R10は、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、炭素数2〜50のアルキニル基、炭素数1〜50のアルコキシ基、炭素数1〜50のチオアルキル基又は炭素数1〜50のチオアルコキシ基である。
R11は、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、炭素数2〜50のアルキニル基、又は炭素数1〜50のアルコキシ基である。
p1は0〜3の整数である。
p2は0〜5の整数である。
p3は0〜7の整数である。)) The polymer containing the repeating unit represented by following formula (10).
x and y are each independently an integer of 0 or more.
n represents the number of repetitions.
Ar 1 and Ar 2 are each independently a group represented by any of the following formulae.
R 10 is an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, an alkynyl group having 2 to 50 carbon atoms, an alkoxy group having 1 to 50 carbon atoms, a thioalkyl group having 1 to 50 carbon atoms, or carbon. A thioalkoxy group having a number of 1 to 50.
R 11 is an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, an alkynyl group having 2 to 50 carbon atoms, or an alkoxy group having 1 to 50 carbon atoms.
p1 is an integer of 0-3.
p2 is an integer of 0-5.
p3 is an integer of 0-7. ))
R20及びR21は、それぞれ独立に、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、又は炭素数2〜50のアルキニル基である。) x and y is 1, the polymer according to any one of claims 4-7 which L 1 and L 2 is represented by the following formula.
R 20 and R 21 are each independently an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, or an alkynyl group having 2 to 50 carbon atoms. )
Ra及びRbは、それぞれ独立に、Cl、Br、I、−Sn(Rc)3、又は−B(OR’)(OR'')であり、Rcは、それぞれ独立に、炭素数4〜12のアルキル基であり、R’及びR''は、それぞれ独立に、水素原子又は炭素数1〜12のアルキル基であるか、又は、OR’及びOR''は、ホウ素原子と共に炭素数2〜24の環状基を形成する。) A monomer represented by the following formula (20).
R a and R b are each independently Cl, Br, I, —Sn (R c ) 3 , or —B (OR ′) (OR ″), and each R c is independently a carbon number 4 to 12 alkyl groups, and R ′ and R ″ are each independently a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, or OR ′ and OR ″ are carbon atoms together with a boron atom. A cyclic group of 2 to 24 is formed. )
R10は、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、炭素数2〜50のアルキニル基、炭素数1〜50のアルコキシ基、炭素数1〜50のチオアルキル基又は炭素数1〜50のチオアルコキシ基である。
R11は、炭素数1〜50のアルキル基、炭素数2〜50のアルケニル基、又は炭素数2〜50のアルキニル基である。
p1は0〜3の整数である。
p2は0〜5の整数である。
p3は0〜7の整数である。)) The monomer according to claim 11 or 12, wherein Ar 1 and Ar 2 are each independently a group represented by any of the following formulae.
R 10 is an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, an alkynyl group having 2 to 50 carbon atoms, an alkoxy group having 1 to 50 carbon atoms, a thioalkyl group having 1 to 50 carbon atoms, or carbon. A thioalkoxy group having a number of 1 to 50.
R 11 is an alkyl group having 1 to 50 carbon atoms, an alkenyl group having 2 to 50 carbon atoms, or an alkynyl group having 2 to 50 carbon atoms.
p1 is an integer of 0-3.
p2 is an integer of 0-5.
p3 is an integer of 0-7. ))
The apparatus which comprises the organic thin-film solar cell of Claim 16.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014223712A JP2016089002A (en) | 2014-10-31 | 2014-10-31 | Monomer and polymer having benzofuranothiophene skeleton, and organic thin-film solar cell material using the polymer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014223712A JP2016089002A (en) | 2014-10-31 | 2014-10-31 | Monomer and polymer having benzofuranothiophene skeleton, and organic thin-film solar cell material using the polymer |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2016089002A true JP2016089002A (en) | 2016-05-23 |
Family
ID=56017814
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014223712A Pending JP2016089002A (en) | 2014-10-31 | 2014-10-31 | Monomer and polymer having benzofuranothiophene skeleton, and organic thin-film solar cell material using the polymer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2016089002A (en) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012142407A (en) * | 2010-12-28 | 2012-07-26 | Mitsubishi Chemicals Corp | Photoelectric conversion element and manufacturing method therefor, and ink |
JP2013199541A (en) * | 2012-03-23 | 2013-10-03 | Osaka Prefecture Univ | Squarylium compound, thin film including the same, and organic thin-film solar cell |
WO2014042091A1 (en) * | 2012-09-14 | 2014-03-20 | 東レ株式会社 | Conjugated polymer, and electron-donating organic material, photovoltaic element material and photovoltaic element comprising same |
WO2014051918A1 (en) * | 2012-09-25 | 2014-04-03 | 3M Innovative Properties Company | Rigid and contorted divinyl crosslinkers |
CN103936760A (en) * | 2014-04-25 | 2014-07-23 | 中南大学 | Thieno (2, 3-f) benzofuran compound, polymers thereof and application of polymers |
JP2014167027A (en) * | 2006-12-21 | 2014-09-11 | Paratek Pharmaceuticals Inc | Tetracycline derivative for treatment of bacteria infection, virus infection and parasite infection |
WO2014151945A1 (en) * | 2013-03-14 | 2014-09-25 | Quanticel Pharmaceuticals, Inc. | Histone demethylase inhibitors |
JP2015183127A (en) * | 2014-03-25 | 2015-10-22 | 出光興産株式会社 | Polymer having benzodithiophene skeleton and organic thin-film solar cell material using the same |
JP2016020423A (en) * | 2014-07-14 | 2016-02-04 | 出光興産株式会社 | Polymer compound and organic thin-film solar cell material using the same |
-
2014
- 2014-10-31 JP JP2014223712A patent/JP2016089002A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014167027A (en) * | 2006-12-21 | 2014-09-11 | Paratek Pharmaceuticals Inc | Tetracycline derivative for treatment of bacteria infection, virus infection and parasite infection |
JP2012142407A (en) * | 2010-12-28 | 2012-07-26 | Mitsubishi Chemicals Corp | Photoelectric conversion element and manufacturing method therefor, and ink |
JP2013199541A (en) * | 2012-03-23 | 2013-10-03 | Osaka Prefecture Univ | Squarylium compound, thin film including the same, and organic thin-film solar cell |
WO2014042091A1 (en) * | 2012-09-14 | 2014-03-20 | 東レ株式会社 | Conjugated polymer, and electron-donating organic material, photovoltaic element material and photovoltaic element comprising same |
WO2014051918A1 (en) * | 2012-09-25 | 2014-04-03 | 3M Innovative Properties Company | Rigid and contorted divinyl crosslinkers |
WO2014151945A1 (en) * | 2013-03-14 | 2014-09-25 | Quanticel Pharmaceuticals, Inc. | Histone demethylase inhibitors |
JP2015183127A (en) * | 2014-03-25 | 2015-10-22 | 出光興産株式会社 | Polymer having benzodithiophene skeleton and organic thin-film solar cell material using the same |
CN103936760A (en) * | 2014-04-25 | 2014-07-23 | 中南大学 | Thieno (2, 3-f) benzofuran compound, polymers thereof and application of polymers |
JP2016020423A (en) * | 2014-07-14 | 2016-02-04 | 出光興産株式会社 | Polymer compound and organic thin-film solar cell material using the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Yu et al. | Wide bandgap copolymers based on quinoxalino [6, 5‐f]. quinoxaline for highly efficient nonfullerene polymer solar cells | |
US8501901B2 (en) | Material for photovoltaic device, and photovoltaic device | |
JP5034818B2 (en) | Organic photoelectric conversion element | |
JP2011246687A (en) | Polymeric compound | |
JP5299023B2 (en) | Material for photovoltaic element and photovoltaic element | |
Lee et al. | Development of DA-type polymers with phthalimide derivatives as electron withdrawing units and a promising strategy for the enhancement of photovoltaic properties | |
JP2010111649A (en) | Quinoxaline compound, electron-donating organic material produced by using the same, material for photovoltaic element and photovoltaic element | |
CN103403907B (en) | The manufacture method of organic photoelectric converter | |
KR20110025854A (en) | Organic photoelectric conversion element | |
WO2012043401A1 (en) | Alternating copolymerization polymer and organic photoelectric conversion element | |
JP5691628B2 (en) | Material for photovoltaic element and photovoltaic element | |
JP2014177409A (en) | Anthradithiophene compound, organic thin film solar cell material including the anthradithiophene compound, and organic thin film solar cell using the organic thin film solar cell material | |
JP2013237828A (en) | Method for producing nitrogen-containing compound | |
JP2012186462A (en) | Manufacturing method of organic photoelectric conversion element | |
JP2016020423A (en) | Polymer compound and organic thin-film solar cell material using the same | |
KR101495152B1 (en) | organic semiconductor compound, manufacturing method thereof, and organic electronic device that contains it | |
JP2015183032A (en) | Polymer having fused-ring type cyclopentadithiophene skeleton and organic thin-film solar cell material using the same | |
JP5740823B2 (en) | Compound and device using the same | |
JP2015183127A (en) | Polymer having benzodithiophene skeleton and organic thin-film solar cell material using the same | |
JP2013095813A (en) | Polymer compound and photoelectric conversion element using the same | |
JP5927965B2 (en) | Manufacturing method of organic photoelectric conversion element | |
JP5884423B2 (en) | Polymer compound and organic photoelectric conversion device using the same | |
JP2013084919A (en) | Photoelectric conversion device | |
JP2016089002A (en) | Monomer and polymer having benzofuranothiophene skeleton, and organic thin-film solar cell material using the polymer | |
JP2011060881A (en) | Material for photovoltaic element and photovoltaic element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170607 |
|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20170607 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180126 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180206 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180406 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20181120 |