JP2016056050A - Inspection method of single crystal silicon ingot, production method of single crystal silicon material using the same, and manufacturing method of electronic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inspection method of a single crystal silicon ingot capable of obtaining easily information on a region of a crystal defect of the single crystal silicon ingot, and to provide a production method of a single crystal silicon material using the inspection method, and a manufacturing method of an electronic device.SOLUTION: An inspection method of a single crystal silicon ingot 2 includes a lifetime measuring step for measuring a lifetime on two or more points on an end face of the single crystal silicon ingot 2 without cutting an inspection sample from the single crystal silicon ingot 2 which is an inspection object, and a determination step for determining whether the single crystal silicon ingot exists in a usable region or not by obtained lifetime values on the two or more points.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a method for inspecting a single crystal silicon ingot, a method for manufacturing a single crystal silicon material using the same, and a method for manufacturing an application of the single crystal silicon material. The present invention relates to a solar cell that can be used for photovoltaic power generation and a method for manufacturing the solar cell.

  The use of natural energy is attracting attention as an alternative to oil, which is causing various problems in the global environment. Among them, the solar cell does not require a large facility and does not generate noise during operation, and thus has been particularly actively introduced in Japan and Europe.

  Solar cells using compound semiconductors such as cadmium tellurium have also been put into practical use, but solar cells using silicon wafers occupy the majority from the standpoints of the safety of the substance itself and the past achievements. Yes.

  There are two types of silicon wafers, a single crystal silicon wafer and a polycrystalline silicon wafer. In particular, recently, single crystal silicon wafers mainly by the Czochralski method (hereinafter referred to as CZ method) are increasingly used for applications that require high-efficiency solar cells such as residential use.

  In the CZ method, a silicon single crystal is immersed in a silicon melt, and the single crystal silicon ingot to be axially grown is grown by gradually pulling up the seed crystal under a desired condition. During the growth, for example, as described in Non-Patent Document 1, it is well known that several crystal defect regions appear in a single crystal silicon ingot. It is known that other single crystal silicon growth methods (for example, a floating zone method (FZ method) and the like) also cause several crystal defect regions depending on the growth conditions.

  For example, Non-Patent Document 1 includes interstitial silicon defect regions (Interstitial defects), H-bands, P-bands, L-bands, vacancy regions (Vacancies), and the like. These regions are characterized by the form of oxygen impurities present in the region, the type of point defects, the presence or absence of aggregation of point defects, and the like, but are different in the influence of heat treatment. For example, when steam oxidation is performed at around 1150 ° C., it is known that oxidation-induced stacking fault (OSF) appears in the P-band region. Further, depending on the heat treatment conditions, atomic vacancies that are not aggregated in the H-band and L-band may promote the movement of oxygen, and may promote fine oxide aggregation under an appropriate temperature condition.

  In a single crystal silicon solar cell using a single crystal silicon wafer, it is important how efficiently minority carriers excited by photons having a higher energy than the band gap can be taken out. Depending on the type of defects present in the single crystal silicon wafer after manufacturing the solar cell, there are those that become recombination centers of the minority carriers, and there are those that reduce the efficiency of taking out minority carriers to the outside. Defects such as the minute oxides and OSF become minority carrier recombination centers and cause the characteristics of the solar cell to be greatly degraded.

  Further, for example, electronic devices such as semiconductor memories and ICs are not only affected by OSF, but also have an effect of lowering the withstand voltage of an oxide film in a vacant region existing before being put into a device process. It is known that a defect region affects device characteristics and manufacturing yield.

  That is, when a device is manufactured using single crystal silicon, it is necessary to use a single crystal silicon wafer having a crystal defect region in which defects that lower the characteristics, manufacturing yield, etc. of the device are difficult to appear after the device is manufactured. is important. For that purpose, a method for inspecting a crystal defect region existing in a single crystal silicon wafer is particularly important.

  As an inspection method therefor, Patent Document 1 discloses a method for examining a crystal defect region in a single crystal silicon wafer or a thin piece of a single crystal silicon ingot using intentional metal contamination and heat treatment. Here, a method is adopted in which a single crystal silicon wafer or a single crystal silicon ingot slice to be investigated for a crystal defect region is prepared and the sample is intentionally subjected to metal contamination and heat treatment.

  Further, Patent Document 2 proposes a method in which two intentional metal contaminations or heat treatments are performed on two adjacent thin slice samples obtained by slicing a single crystal silicon ingot along a plane parallel to the growth direction and compared.

  Further, for example, Non-Patent Document 2 describes a method for evaluating the OSF region using selective etching with acid, a method for evaluating COP defects by SC1 cleaning, and the like.

“Journal of Crystal Growth”, 367, 2013, 68-72. Lukas Valek and Jan Sik, “Modern Aspects of Bulk Crystal and Thin Film Preparation”, 2012, 43-70.

US Pat. No. 7,901,132 US Pat. No. 7,074,271

  However, in the method described in Patent Document 1, it is necessary to cut a single crystal silicon wafer or a thin piece of single crystal silicon from a single crystal silicon ingot (hereinafter referred to as an inspection sample). It is necessary to perform metal contamination, heat treatment or etching. Therefore, it is difficult to use a wafer or a thin piece used for inspection for device manufacturing, which not only requires labor and cost for inspection, but also leads to a decrease in ingot yield and an increase in device cost.

  In addition, if it is found by the above inspection that a region of crystal defects that are undesirable for device manufacture is included in the inspection sample, the ingot of the portion that is expected to be the same region is excised, and further, the inspection sample is cut out. It becomes necessary to repeat the above, which further increases the cost of the device.

  In addition, the method described in Patent Document 2 includes a step of cutting two adjacent thin slice samples obtained by slicing a single crystal silicon ingot along a plane parallel to the growth direction, thereby reducing the yield and increasing the cost of the single crystal silicon ingot. There is a problem that leads to. Further, since the single crystal silicon wafer is generally sliced perpendicularly to the growth direction of the single crystal silicon ingot, there is a problem that the single crystal silicon wafer portion actually used in the device process cannot be directly evaluated by this method.

  Further, as in the case of the method described in Patent Document 1, when it is found by the above inspection that a region of crystal defects that is not desirable for device manufacture is included, the ingot of a portion that is expected to be a similar region is cut off, Furthermore, there arises a problem that it is necessary to repeatedly cut out the inspection sample.

  In the method described in Non-Patent Document 2, there is a description of the evaluation method of the OSF region using selective etching with acid, the evaluation method of COP defects by SC1 cleaning, and the like. In addition, it is necessary not only to cut out a sample for inspection, but also to perform an expensive processing process such as mirror polishing.

  For example, as a sample for inspection used in the methods described in Patent Document 1 and Non-Patent Document 2, a single crystal silicon ingot is appropriately selected from a plurality of single crystal silicon wafers sliced with a multi-wire saw before inspection. Is also possible. However, in that case, if the area of the crystal defect that is not desirable for device manufacture is confirmed as a result of the inspection, the sliced single crystal silicon wafer may be wasted, which may increase the cost of the device. is there.

  Therefore, in the present invention, a method for inspecting a single crystal silicon ingot that can easily obtain information on the crystal defect region of the single crystal silicon ingot without cutting out a test sample from the single crystal silicon ingot, and using the same It is an object of the present invention to provide a method for manufacturing a single crystal silicon material and a method for manufacturing an electronic device.

  As a result of intensive studies, the present inventors have succeeded in solving the above-mentioned problems by performing lifetime measurement on a single crystal silicon ingot and have reached the present invention.

  Thus, according to the present invention, the lifetime measurement is performed at two or more points on the end surface of the single crystal silicon ingot without cutting the inspection sample from the single crystal silicon ingot to be inspected, thereby the single crystal silicon ingot A method for inspecting a single crystal silicon ingot that can determine whether or not is a usable region is provided.

  In addition, according to the present invention, there is provided a method for inspecting a single crystal silicon ingot using an eddy current detection method in a lifetime measurement process.

  Further, according to the present invention, in the step of determining the usable area of the single crystal silicon ingot, it is calculated from the in-plane distribution shape of the obtained two or more lifetime values and the obtained two or more lifetime values. There is provided a method for inspecting a single crystal silicon ingot that is determined based on at least one of the following parameters (for example, a ratio between a minimum value and a maximum value).

  Further, according to the present invention, the lifetime is measured at two or more points on the end surface of the single crystal silicon ingot without cutting the inspection sample from the single crystal silicon ingot to be inspected, and thus it is determined as the usable region. A method for producing a single crystal silicon ingot is provided.

  Further, according to the present invention, when the single-crystal silicon ingot is determined to be an unusable area in the lifetime inspection, the unusable area is excised and inspected until it is determined to be an unusable area in the lifetime inspection. A method for producing a single crystal silicon ingot is provided.

  Further, according to the present invention, there is provided a method for producing a single crystal silicon material, wherein a single crystal silicon material is obtained by processing a non-defective single crystal silicon ingot produced using the above-described two kinds of methods for producing a single crystal silicon ingot. Provided.

  Moreover, according to this invention, the manufacturing method of an electronic device which manufactures electronic devices, such as a single crystal silicon solar cell, with the single crystal silicon material manufactured using the said silicon material manufacturing method is provided.

  According to the present invention, when a single crystal silicon ingot is inspected, the lifetime is measured at two or more points on the end surface of the single crystal silicon ingot without cutting the inspection sample from the single crystal silicon ingot to be inspected. In addition, it is possible to provide a method for inspecting a single crystal silicon ingot and a method for manufacturing a single crystal silicon ingot that can determine whether the single crystal silicon ingot can be used.

  In addition, it is possible to provide a method for producing a single crystal silicon material, in which a single crystal silicon material is obtained by processing a good single crystal silicon ingot obtained by the method for producing a single crystal silicon ingot. Here, the single crystal silicon material is used as a general term for a single crystal silicon block (for example, as-grown, cylindrical shape, prismatic shape, etc.), a single crystal silicon wafer, and the like.

  Furthermore, it is possible to provide an electronic device manufacturing method in which an electronic device such as a single crystal silicon solar cell is manufactured using the single crystal silicon material obtained by the above method for manufacturing a single crystal silicon material. Here, the single crystal silicon solar cell is used as a general term for a single crystal silicon solar cell and a single crystal silicon solar cell module.

  According to the present invention, after a device is manufactured, a single crystal silicon wafer having a crystal defect region in which defects that degrade the characteristics, manufacturing yield, etc. of the device are difficult to appear can be easily obtained in a single crystal silicon ingot state. Inspection can be performed, and the cost of a device using a single crystal silicon wafer can be reduced. In addition, by using a crystal defect region in which defects that degrade device characteristics are unlikely to appear, there is a possibility of improving the overall characteristics of the device and thus the product including the device.

  In addition, the single crystal silicon ingot inspection method is further effective when an eddy current detection method is used in the lifetime measurement process.

  In the method for inspecting a single crystal silicon ingot, in the step of determining the usable area, at least one of the obtained in-plane distribution shape of two or more lifetime values and the obtained two or more lifetime values The effect is further exhibited when the determination is made based on the parameter calculated from (for example, the ratio between the minimum value and the maximum value). However, since the characteristics of the single crystal silicon ingot are considered to be axial objects, it is preferable that the two points are not equivalent when the lifetime measurement is two points in the plane.

It is a perspective view which shows the external appearance of the single crystal silicon rod of embodiment. It is a perspective view which shows the external appearance of the single crystal silicon ingot of embodiment. It is a figure which shows the graph of an example of the lifetime data with respect to the position on the diameter measured with the test | inspection method of embodiment. It is a side view which shows the outline of distribution of the defect area | region known by the simulation and the past experience in a single crystal silicon rod. It is a figure which shows the graph of the lifetime data with respect to the position on the diameter in the XX 'cut surface of FIG. It is a figure which shows the graph of the lifetime data with respect to the position on the diameter in the YY 'cut surface of FIG. It is a figure which shows the graph of the lifetime data with respect to the position on the diameter in the ZZ 'cut surface of FIG.

  Hereinafter, a method for inspecting a single crystal silicon ingot and an electronic device according to an embodiment of the present invention will be described with reference to the drawings.

(First embodiment)
For example, the general appearance of a single crystal silicon rod pulled up by the CZ method that is currently widely used is as shown in FIG. 1, and the single crystal silicon rod 1 is cut off at the top and the bottom. It is divided into one or a plurality of single crystal silicon ingots 2 (FIG. 2) according to the length of the rod. The general appearance of the single crystal silicon ingot 2 is as shown in FIG. In addition, the single crystal silicon rod may be polished into a cylindrical shape in a long rod state before being divided and further divided according to the length.

  In the present specification, as shown in FIG. 1, single crystal silicon in a state immediately after the pulling is obtained as a single crystal silicon rod 1, a cylindrical one obtained by cutting off the uppermost and lowermost portions of the single crystal silicon rod 1, or A product obtained by dividing it into a plurality of cylindrical objects is called a single crystal silicon ingot 2 (FIG. 2). A single crystal silicon ingot is called a single crystal silicon ingot regardless of the state of the side surface such as a cylindrically polished side surface or an as-grown state.

  In the method for inspecting a single crystal silicon ingot according to the present embodiment, lifetime measurement is measured at two or more points that are not equivalent at the end surface of the single crystal silicon ingot as shown in FIG. 1 without cutting the test sample. . Here, as the measurement point, for example, the vicinity of the center and the vicinity of the periphery of the circular cross section are preferable. Using the lifetime value measured in this manner, it is possible to determine whether or not the single crystal silicon ingot near the end face where the lifetime is measured can be used. According to this inspection method, there is no process such as cutting out a sample for inspection, and it is very simple and can keep costs low.

  Since the properties of the single crystal silicon ingot are considered to be almost axial objects, it is appropriate to arrange the lifetime data obtained in this way according to the distance from the center of the end face. As an example, FIG. 3 shows an example of data obtained by measuring the end face of an 8-inch single crystal silicon ingot on the diameter every 20 mm. In FIG. 3, the horizontal axis is the position (mm) on the diameter when the center is 0, and the vertical axis is MCLT (Arb.unit) which is a lifetime value. At least one of the in-plane distribution shape of two or more lifetime data obtained in this way and a parameter (for example, the ratio between the minimum value and the maximum value) calculated from the obtained two or more lifetime data By using, it is possible to determine whether or not it is a usable area, which is effective.

  As described above, it is possible to determine whether or not the portion of the single crystal silicon ingot near the measured end surface can be used by measuring the lifetime of the end surface. In general, a region for measuring in lifetime measurement is about several tens of millimeters from the measurement surface, and in principle, whether or not it can be used can be determined. However, with regard to single crystal silicon ingots, there has been a great deal of research and experience accumulated so far, and it is possible to predict the distribution of defect regions almost by simulation. Therefore, even if the area that can be determined by lifetime measurement is about several tens of millimeters from both end faces where lifetime measurement is possible, the distribution of the defect area in the entire single crystal silicon ingot to be inspected is predicted. It can be determined whether it can be used in the entire region to be inspected.

  For the lifetime measurement, it is most effective to use an eddy current detection method. The reason is that the eddy current detection method is not easily affected by surface passivation, etc., so it is possible to collect data that reflects the values in the bulk without any special treatment even when the end surface of the single crystal silicon ingot is cut. Because there is.

  The (non-defective) single crystal silicon ingot determined as the usable region by the above determination can be sold as a non-defective ingot or can be flowed to a downstream process. By simplifying the inspection process according to the present invention, the cost of the silicon material can be reduced.

  Moreover, since the single crystal silicon wafer thus obtained is composed of a defect region suitable for the intended electronic device manufacturing, it is expected that the characteristics and yield of the electronic device are improved. The electronic device is not particularly limited as long as the characteristics and the relationship between the yield and the defect region are known. For example, the present invention functions effectively also in the production of a single crystal silicon solar cell.

(Single crystal silicon material)
In the present specification, the “single crystal silicon material” refers to a single crystal silicon block that is a non-defective single crystal silicon ingot that has been determined to be a usable region by the single crystal silicon ingot inspection method of the present invention, and a processed product thereof. And single crystal silicon wafer.
For example, when the object of the inspection method of the present invention is a single crystal silicon ingot in an as-grown state, the single crystal silicon ingot after cylindrical grinding, which is a processed product, is also included in the single crystal silicon block. In addition, a single crystal silicon block includes a prism processed, a surface appropriately polished, and the like.

(Second Embodiment)
As a second embodiment of the present invention, an example applied to a single crystal silicon solar cell will be described as an example of an electronic device.

(Single crystal silicon solar cell)
The single crystal silicon solar cell of the present embodiment is manufactured using the single crystal silicon wafer manufactured according to the first embodiment described above as a substrate, and there are various structures. Yes. Dye-sensitized solar cells are based on a special operating principle, but very common solar cells have a PN junction or a MIS type Schottky junction. Solar cells using a single crystal silicon wafer as a substrate also have ordinary homojunction PN junctions, heterojunction PN junctions with amorphous silicon and compounds (III-V, I-III-VI2, etc.) There are various types such as an MIS Schottky junction using amorphous silicon (I layer) and an MIS Schottky junction having a silicon oxide film as an I layer.

  In addition, there are those where the junction is on the light incident surface side, those on the back surface side of the light incident surface, those where the collector electrode is on the back side of the solar cell surface side, and those where the PN side electrode is only on the back surface side There are many types of combinations.

  Further, a plurality of them are electrically connected to obtain a polycrystalline silicon solar cell module.

  In this specification, the concept including “single crystal silicon solar battery cell” and “single crystal silicon solar battery module” is simply referred to as “single crystal silicon solar battery”. Therefore, for example, what is described as “single crystal silicon solar cell” is meant to include “single crystal silicon solar cell” and “single crystal silicon solar cell module”.

(Third embodiment)
As a third embodiment according to the present invention, a test example based on the present invention will be described. In addition, although this invention is demonstrated concretely by a test example below, this invention is not limited by this test example. In addition, the reference numerical value can be appropriately changed according to the situation.

(Test example)
Here, a test example relating to the method for manufacturing a single crystal silicon solar cell in the present embodiment will be described in detail below. However, in this test example, items such as oxygen concentration, carbon concentration, and specific resistance are omitted, and only the portion related to the defect region is focused. For example, it is possible to change the determination criterion regarding the lifetime in accordance with the oxygen concentration.

  An 8-inch single crystal silicon rod is grown by the CZ method, the upper seed crystal part, the shoulder part, and the tail part are cut, polished to a cylinder of 200 mmΦ, and then limited to a size of about 300 mm due to the size limitation of the slicing device used in the subsequent process. Divided into three crystalline silicon ingots. The single crystal silicon ingot thus obtained is called A, B, C sequentially from the side close to the seed crystal at the time of growth, and "-S" on the end surface close to the seed crystal of each of A, B, C, tail side "-T" is added to the name (see Fig. 2).

  Lifetime measurement was performed every 20 mm from the center along the diameter at each end face. The lifetime measurement was performed using a lifetime measuring apparatus BLS-I manufactured by Sinton Instruments, under the condition of irradiating a flash through a long pass filter of Special MCD = 5E14 cm−3, Transient mode, 800 nm. This apparatus employs an eddy current detection method, and employs a method of calculating a lifetime value at a specific minority carrier concentration (Specified MCD) from eddy current attenuation data after irradiation with a light pulse.

  In the state of the single crystal silicon rod 1, the distribution of approximate defect regions known from simulations and experiences so far is shown in FIG.

  As a result of diligent research, it was found that in the single crystal silicon solar cell manufacturing process, recombination centers are generated in the H-band and L-band regions shown in FIG. There is a possibility that H-band and L-band are generated on the single crystal silicon ingot AS plane side and the CT plane side. On the AT (B-S) side and BT (C-S) side, the possibility of H-band and L-band generation is low in the simulation, but it can be used after confirmation. I confirmed that there was.

  In another experiment, lifetime measurement data at the X-X ′, Y-Y ′, and Z-Z ′ cut planes of FIG. 4 were prepared. Each of the data had a shape as shown in FIGS. 5, 6, and 7, the horizontal axis is the position (mm) on the diameter when the center is 0, and the vertical axis is MCLT (Arb.unit) that is a lifetime value.

As shown in FIGS. 5 to 7, in the hole region (for example, ZZ ′), which is a region that does not cause deterioration of the cell characteristics of the single crystal silicon solar cell, it was monotonously decreased from the central portion toward the peripheral portion. (However, the shape differs depending on the shape of the solid-liquid interface, the oxygen concentration distribution, the thermal donor distribution, etc., and may increase gradually from the central portion toward the peripheral portion. Similarly, the cross-section XX ′, Since the lifetime shape at YY 'is also affected by the shape of the solid-liquid interface, oxygen concentration distribution, thermal donor distribution, etc., in such a case, from the lifetime data obtained by measurement, these This can be done by eliminating the influence of
From the above, in this test example, the defect area was determined as follows, using the lifetime value and the minimum value / maximum value of the lifetime data as an example of the parameter calculated from the lifetime data. That is, as the lifetime data goes from the center of the ingot toward the peripheral portion, the determination is made as in the following 1-3.
1. In the case of monotonous decrease, the measurement end face is a hole area and is determined as an usable area. In the case of monotonic increase, the measurement end face is an interstitial region, and it is determined that it cannot be used. May be determined as an available area)
3. When not monotonous, the measurement end face is a mixed region (for example, a surface including a plurality of defect regions in the surface as indicated by YY ′ in FIG. 2), but the minimum / maximum lifetime value is 0.7 or more. If the measurement end face is judged to be unusable, it is close to the hole area and the influence of the area other than the hole area is negligible. Measurements were made. This procedure was continued until it was determined from the lifetime data that the measurement end face was usable.

The same inspection method was performed for AT (BS), BT (CS), and CT.
In A-S, the lifetime shape was monotonically increasing from the center to the periphery, so it was determined that it could not be used, cut about 30 mm from the end face (hereinafter referred to as defective part 1), and again at end face AS ′. Lifetime measurement was performed.

  Since it was determined that the end surface A-S ′ could not be used again, the end surface was cut again by 30 mm (hereinafter referred to as a defective portion 2), and the same inspection was repeated. Assuming that the new end face is A-S ″, it is determined that A-S ″ is usable because the lifetime data decreases monotonously from the center of the ingot toward the periphery.

  Next, a single crystal silicon ingot that was determined to be usable in the above inspection (non-defective product) and a single crystal silicon ingot that was determined to be unusable (defective product) were processed into a 156 mm square prism using a multi-wire saw. A single crystal silicon wafer having a thickness of about 150 μm was formed, subjected to normal damage removal and texture etching, and then put into a single crystal silicon solar cell manufacturing process.

  Table 1 shows the short-circuit current (Isc), open-circuit voltage (Voc), fill factor (FF), maximum output (Pm), and characteristic yield of the single crystal silicon solar cell thus obtained.

  Further, 42 series modules were prepared from each lot using 42 single crystal silicon solar cells. Table 2 shows the results of measuring the characteristics of the fabricated module. In Tables 1 and 2, the value in the non-defective part is normalized as 100.

  As is clear from Tables 1 and 2, single crystal silicon solar cells and single crystal silicon solar cell modules manufactured from single crystal silicon ingots judged as non-defective products in this test example were determined to be defective in this test example. From parts 1 and 2, good results were obtained in all items, and results showing the effectiveness of this test example were obtained.

  In the above description, the threshold value of the minimum value / maximum value of the in-plane distribution of lifetime is set to 0.7, but may be appropriately changed according to the situation.

  Moreover, although 30 mm was employ | adopted in this test example as thickness in the case of cut | disconnecting an end surface, it can change suitably according to a condition.

  In this test example, an area determined to be usable after two end face cuttings appeared. However, if it is not determined that it can be used even twice, the above cycle should be repeated until it is determined to be an usable area. Good.

  In this test example, lifetime measurement was performed on the single crystal silicon ingot after cylindrical polishing, but it was performed with an ingot in an as-grown state, and after it was determined that it could be used, cylindrical polishing or prismatic processing, etc. Conversely, it is also possible to employ the inspection method of the present invention after a certain degree of processing such as prismatic processing.

  In this test example, the case where a single crystal silicon solar cell is manufactured as an electronic device has been described in detail. However, other electronic devices can be handled by applying the same concept.

  Moreover, although the example which performs a lifetime measurement at intervals of 20 mm along a diameter was shown above, the characteristic of a single crystal silicon ingot is basically an axis object, and is a plurality of two or more points with different distances from the center. If lifetime measurement is performed, the same inspection can be performed.

  Also, for example, in a pulling apparatus using the CZ method, if a carbon-based heat insulating material that has not been highly purified is used, impurities may adhere to and diffuse on the side surface of the single crystal silicon ingot, or in the periphery of the single crystal silicon ingot. In some cases, the lifetime tends to decrease. The change in the lifetime observed here is not due to a defect region in the crystal. Therefore, the decrease in the lifetime of the peripheral portion can be dealt with by not using it for the determination or not measuring it.

  According to the present invention, it becomes possible to easily manufacture a single crystal silicon wafer used as a substrate for various electronic devices with good yield, and contribute to the spread of the electronic devices. It is possible.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

1 Single crystal silicon rod 2 Single crystal silicon ingot

Claims (5)

  A method for inspecting a single crystal silicon ingot, wherein a lifetime measurement step for measuring a lifetime at two or more points on an end surface of a single crystal silicon ingot without cutting an inspection sample from the single crystal silicon ingot to be inspected And a determination step of determining whether or not the single crystal silicon ingot is in a usable region using two or more obtained lifetime values.   In the determination step, determination is made based on at least one of parameters calculated from the obtained in-plane distribution shape of two or more lifetime values and the obtained two or more lifetime values. The inspection method of the single crystal silicon ingot as described.   The manufacturing method of a single crystal silicon ingot including the test | inspection process using the test method of the single crystal silicon ingot of Claim 1 or 2.   A method for producing a single crystal silicon material, wherein a single crystal silicon material is obtained by processing a single crystal silicon ingot produced using the method for producing a single crystal silicon ingot according to claim 3.   The manufacturing method of an electronic device which manufactures an electronic device with the single-crystal silicon material manufactured using the silicon material manufacturing method manufactured by the manufacturing method of Claim 4.

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