JP2015173078A - Organic EL display device and organic EL display device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic EL display device in which a sealing layer formed on a terminal area can be easily removed, and a method for manufacturing the organic EL display device.SOLUTION: An organic EL display device includes sealing layers (P1-P3) for protecting an organic EL element and a terminal area TE formed at an end part of a substrate SB. The sealing layers (P1-P3) are configured of a plurality of layers of insulation films including an inorganic insulation film and an organic insulation film. The terminal area TE includes: a plurality of terminal wirings WL; a plurality of insulation film laminates IB extending between the plurality of terminal wirings WL adjacent each other and formed of the plurality of layers of insulation films; and a recessed part CC formed between each of the plurality of terminal wirings WL and each of the plurality of insulation film laminates IB. Side walls of the recessed part CC are formed of a side face of the terminal wiring WL and a side face of the insulation film laminate IB. A resin layer PL is filled in contact with the side face of the terminal wiring WL and the side face of the insulation film laminate IB.

Description

  The present invention relates to an organic EL display device and a method for manufacturing the organic EL display device.

  In an organic electro-luminescence display device (Organic Electro-Luminescence display, hereinafter referred to as an organic EL display device), an organic EL element is formed in each of a plurality of pixels on a substrate on which a thin film transistor is formed. Protected by.

  A terminal region used for inputting a signal for displaying an image is formed at the end of the organic EL display device.

JP 2005-528250 A JP 2007-73353 A JP 2011-48027 A

  Here, FIG. 6A and FIG. 6B are diagrams for explaining a manufacturing process of the terminal region of the organic EL display device, and one of the terminal regions in a state where a flexible printed circuit (FPC) is not connected. A partial sectional view is shown. In the terminal region of the organic EL display device shown in FIG. 6, a plurality of terminal wirings WL are arranged in parallel, and an insulating film stack IB composed of a plurality of insulating films is arranged between the terminal wirings WL. ing.

  In the case of the organic EL display device shown in FIG. 6, the insulating film stack IB is constituted by an interlayer insulating film stacked when forming the thin film transistor, and the insulating layers IS1 and IS3 constituting the insulating film stack IB. Is silicon oxide (SiOx), and the insulating layer IS2 is silicon nitride (SiNx). And between each insulating film laminated body IB and each terminal wiring WL, the recessed part CC formed in a dimple on the lower side (board | substrate SB side) is formed.

  Here, in the manufacturing process of the organic EL display device, a sealing layer P2 for protecting the organic EL element from moisture or the like may be formed on the entire surface of the substrate SB. 6A is a diagram illustrating a state where a sealing layer is not formed in the terminal region, and FIG. 6B is a diagram illustrating a state where the sealing layer is stacked from the state of FIG. 6A. In the sealing layer in FIG. 6B, a second sealing layer P2 that is an organic insulating film is laminated between a first sealing layer P1 that is an inorganic insulating film and a third sealing layer P3. P2 is locally formed in the recess CC.

  When the organic insulating film is locally formed in the concave portion CC as shown in FIG. 6B, the manufacturing processing load for removing the sealing layer from the terminal region is increased. Specifically, when the inorganic insulating film and the organic insulating film are removed separately, it takes an excessive amount of time to etch the thick organic insulating film (second sealing layer P2). When an etching gas that removes both of the films at the same time is applied, the ratio, selection, and control of the components become difficult.

  The present invention has been made in view of the above problems, and an object thereof is to provide an organic EL display device capable of easily removing a sealing layer formed on a terminal region, and a method for manufacturing the organic EL display device. And

  In view of the above problems, an organic EL display device according to the present invention includes a plurality of organic EL elements including a thin film transistor formed on a substrate, an organic light emitting layer connected to the thin film transistor, and the plurality of organic EL elements. An organic EL display device comprising a sealing layer that protects the substrate and a terminal region that is formed at an end portion of the substrate, wherein the sealing layer includes an inorganic insulating film and an organic insulating film A plurality of insulating film laminates configured by a plurality of insulating films, wherein the terminal region extends between each of the plurality of terminal wirings and the plurality of terminal wirings. And a recess formed between each of the plurality of terminal wirings and the plurality of insulating film stacks, and a side wall of the recess is formed by a side surface of the terminal wiring and a side surface of the insulating film stack. Formed in the recess The contact with the side surface of the terminal wiring side surface of the insulating film laminate resin layer is filled, characterized in that.

  In view of the above problems, an organic EL display device according to the present invention includes a thin film transistor formed on a substrate, a plurality of organic EL elements including an organic light emitting layer connected to the thin film transistor, and the plurality of organic EL devices. An organic EL display device comprising: a sealing layer that protects an EL element; and a terminal region that is formed at a position that is an end of the substrate, wherein the sealing layer includes an inorganic insulating film and an organic insulating film And the terminal region extends between each of the plurality of terminal wires and the plurality of terminal wires, and is formed of a plurality of insulating films. And a recess formed between each of the plurality of terminal wirings and the plurality of insulating film laminates, and the recess is formed to extend from the side wall to the bottom of the recess. Also has a metal thin film layer The side wall of the recess is formed by the side surface of the terminal wiring and the side surface of the insulating film stack, and the metal thin film layer is formed in contact with the side surface of the terminal wiring and the side surface of the insulating film stack, The recess is filled with a resin layer in contact with the inside of the metal thin film layer.

  Further, in one aspect of the organic EL display device according to the present invention, the resin layer filled in the recess is made of the same material as the insulating film formed to separate the plurality of organic EL elements. This may be a feature.

  Moreover, in one aspect of the organic EL display device according to the present invention, the resin layer filled in the recess is made of the same material as the insulating film for flattening the undulations formed by the thin film transistor. This may be a feature.

  Moreover, in one aspect of the organic EL display device according to the present invention, the metal thin film layer may be made of the same material as the electrode layer constituting the anode in the organic EL element.

  Further, in one aspect of the organic EL display device according to the present invention, the plurality of layers of insulating films may be configured by interlayer insulating films stacked in a region where the plurality of thin film transistors are formed. Good.

  In one aspect of the organic EL display device according to the present invention, any one of the plurality of insulating films in the insulating film stack is formed of the same material as the inorganic insulating film in the sealing layer. It may be characterized by that.

  In addition, in view of the above problems, a method for manufacturing an organic EL display device according to the present invention includes a plurality of organic EL elements including an organic light emitting layer connected to a thin film transistor, a plurality of terminal electrodes, and the plurality of terminal wirings. And a plurality of insulating films formed to form the thin film transistor, comprising: a terminal region including a plurality of insulating film laminates interposed between the plurality of insulating film laminates; An insulating film laminate forming step of forming an insulating film laminate at a plurality of locations, a terminal electrode forming step of forming terminal electrodes at a plurality of locations together with a source electrode and a drain electrode in the thin film transistor, and the insulating film Resin layer filling step of filling the resin layer in contact with the side surface of the insulating film laminate and the side surface of the terminal electrode in the recess formed between the laminate and the terminal electrode A sealing layer laminating step of laminating a sealing layer for protecting the organic EL element so as to cover the terminal area filled with the resin layer in the recess and the plurality of organic EL elements, and the terminal area Etching the sealing layer covering the substrate to expose the terminal electrode.

  In addition, in view of the above problems, a method for manufacturing an organic EL display device according to the present invention includes a plurality of organic EL elements including an organic light emitting layer connected to a thin film transistor, a plurality of terminal electrodes, and the plurality of terminal wirings. And a plurality of insulating layers formed between the plurality of insulating layers formed to form the thin film transistor. An insulating film laminate forming step for forming an insulating film laminate at a plurality of locations, a terminal electrode forming step for forming terminal electrodes at a plurality of locations together with a source electrode and a drain electrode in the thin film transistor, and the organic EL An anode electrode in the device is formed, and a metal thin film layer extending from the side wall to the bottom of the recess formed between the insulating film laminate and the terminal electrode is formed. A metal thin film layer forming step to be formed; a resin layer filling step of filling the concave portion with a resin layer in contact with the inside of the metal thin film layer formed in the concave portion; and a sealing layer for protecting the organic EL element Sealing layer laminating step for covering the terminal region in which the concave portion is filled with the resin layer and the plurality of organic EL elements, and an etching step for etching the sealing layer covering the terminal region In the metal thin film forming step, the metal thin film layer is formed so as to be in contact with the upper surface and the side surface of the terminal electrode and the side surface of the insulating film laminate, and in the etching step, the terminal electrode The sealing layer is etched so that the metal thin film layer formed on the upper surface of the metal is exposed.

  ADVANTAGE OF THE INVENTION According to this invention, the organic EL display apparatus which can remove easily the sealing layer formed on the terminal area | region, and the manufacturing method of the organic EL display apparatus can be provided.

1 is an overall schematic diagram of an organic EL display device according to a first embodiment of the present invention. It is sectional drawing which shows typically the organic EL element in 1st Embodiment. It is sectional drawing which shows the mode of the manufacturing process of the terminal area | region of the organic electroluminescence display in 1st Embodiment. It is sectional drawing which shows the mode of the manufacturing process of the terminal area | region of the organic electroluminescence display in 1st Embodiment. It is sectional drawing which shows the mode of the manufacturing process of the terminal area | region of the organic electroluminescence display in 1st Embodiment. It is sectional drawing which shows the mode of the manufacturing process of the terminal area | region of the organic electroluminescence display in 1st Embodiment. It is sectional drawing which shows the mode of the terminal area | region of the organic electroluminescence display in 1st Embodiment. It is a flowchart which shows the manufacturing process of the terminal area | region of the organic electroluminescent display apparatus in 1st Embodiment. It is sectional drawing which shows the mode of the terminal area | region of the organic electroluminescence display in 2nd Embodiment. It is a figure for demonstrating the manufacturing process of the terminal area | region of an organic electroluminescence display. It is a figure for demonstrating the manufacturing process of the terminal area | region of an organic electroluminescence display.

  Hereinafter, organic EL display devices according to embodiments of the present invention will be described with reference to the drawings.

[First Embodiment]
FIG. 1 is a diagram schematically showing an entire organic EL display device 1 according to the first embodiment of the present invention. The organic EL display device 1 of the present embodiment includes a thin film transistor substrate SB configured by arranging a plurality of thin film transistors in a matrix, and a sealing substrate PU on which a color filter bonded to the thin film transistor substrate SB is formed. This is a top emission type that displays an image on the sealing substrate PU side.

  The display area DP of the organic EL display device 1 includes a plurality of pixels to be subjected to display control. The edge of the thin film transistor substrate SB is connected to a flexible printed circuit board and receives an external signal. A terminal area TE is arranged for the purpose. In the terminal region TE, a plurality of terminal wirings are arranged so as to be parallel to each other.

  On the thin film transistor substrate SB, a large number of scanning signal lines are laid out at regular intervals, and a large number of video signal lines are laid out at regular intervals in a direction perpendicular to the scanning signal lines. In each pixel region partitioned by these scanning signal lines and video signal lines, a thin film transistor used for switching of a MIS (Metal-Insulator-Semiconductor) structure, an anode electrode (anode), and an organic light emitting layer (organic EL layer) And a cathode electrode (cathode) is disposed. The anode electrode is formed separately for each pixel, and controls the light emission of the organic light emitting layer by generating a potential difference between the anode electrode and the cathode electrode by a signal from the video signal line supplied through the thin film transistor. .

  Next, FIG. 2 is a cross-sectional view schematically showing the state of each organic EL element in the organic EL display device 1. As shown in the figure, a thin film transistor T1 is formed on the substrate SB, and a plurality of insulating layers IS1 to IS3 are formed when the thin film transistor T1 is formed. Further, flattening layers PL1 and PL2 are formed above the thin film transistor T1 so as to be flat without a step, and the reflective electrode RF, the anode electrode An, the bank layer BNK, and the organic light emitting layer are formed on the flattening layer PL2. OL and cathode electrode Ca are formed. Further, the sealing substrate PU is disposed to face the thin film transistor substrate SB, and sealing layers P1 to P3 are stacked between the thin film transistor substrate SB and the sealing substrate PU.

  The anode electrode An and the cathode electrode Ca are formed of a transparent conductive film such as indium tin oxide (ITO) or indium zinc oxide (IZO (trademark): Indium Zinc Oxide). It is formed of a highly reflective metal such as silver or aluminum. The anode electrode An and the reflection electrode RF are formed for each pixel below the organic light emitting layer OL, and the cathode electrode Ca is a layer common to each organic EL element in the display region DP. It is formed on the upper side.

  The organic light emitting layer OL is configured by laminating a hole transport layer, a light emitting layer, and an electron transport layer from below. Further, as the organic light emitting layer OL, a plurality of these layers may be functionally combined to be laminated in two layers or a single layer, and further have other functions such as a hole injection layer and an electron injection layer. Layers may be stacked. In the organic light emitting layer OL, light is emitted by recombination of holes injected from the lower electrode An and electrons injected from the upper electrode Ca, and the potential difference between the two electrodes causes the light emitting layer to emit light. Light emission is controlled.

  The bank layer BNK is an insulating layer formed so as to separate each of the anode electrode An and the reflection electrode RF formed in the substrate SB shape, and corresponds to each pixel region and the organic EL element in the display region DP. Thus, the pixel separation film is formed in a frame shape. In the present embodiment, the bank layer BNK is composed of an organic insulating film, and each organic light emitting layer OL separated by the bank layer BNK is individually connected to the thin film transistor T1 and light emission is controlled independently.

  Next, the insulating layers IS1 to IS3 are interlayer insulating layers formed when the thin film transistor T1 is formed, and are insulating layers for forming a multilayer wiring corresponding to the source electrode and the drain electrode. As shown in FIG. 2, the insulating layers IS <b> 1 to IS <b> 2 of the present embodiment are insulating layers stacked between the gate electrode and the semiconductor layer, and the insulating layer IS <b> 3 includes the gate electrode and the gate electrode. In addition, it is an insulating layer for separating the source wiring and drain wiring drawn in the upper layer.

  Further, as will be described later, the insulating layers IS1 and IS3 of this embodiment are made of silicon oxide (SiOx), and the insulating layer IS2 is made of silicon nitride (SiNx). It may be made of other materials. In addition, as an interlayer insulating layer when forming the thin film transistor T1, for example, an insulating layer IS2 made of silicon nitride and an insulating layer IS3 made of silicon dioxide are formed, and an insulating film laminate IB described later is formed by only these two layers. May be.

  Next, the planarization layers PL1 and PL2 form a base for planarizing the level difference due to the thin film transistor T1 to form an organic EL element, and are composed of an organic insulating film such as acrylic or polyimide. Further, as shown in FIG. 2, contact holes for connecting the anode electrode An and the thin film transistor T1 are processed in these planarization layers. In the present embodiment, the planarization layer is two layers, but may be composed of one layer, or may be composed of three or more layers.

  The sealing layer is an insulating layer that covers the cathode electrode Ca from above and seals the organic EL element, and is composed of a plurality of insulating films including an organic insulating film and an inorganic insulating film. In the sealing layer in the present embodiment, the first sealing layer P1 and the third sealing layer P3 are inorganic insulating films, and the second sealing layer P2 is an organic insulating film. As long as it is composed of two or more insulating layers including an organic insulating film and an inorganic insulating film.

  Here, the state of the terminal region TE in the organic EL display device of the present embodiment will be particularly described.

  FIG. 3 is a diagram for explaining each stage in the process of forming the terminal region TE of the present embodiment. In the following, a diagram corresponding to the structure after the end of the process of forming the terminal region TE is shown. The configuration of the terminal region TE and the recess CC will be specifically described using 3E.

  As shown in FIG. 3E, in the terminal region TE of the present embodiment, the insulating film stack IB is disposed between each of the plurality of terminal electrodes WL, and the upper surface of the terminal electrode WL is exposed, while the insulating film The resin layer PL is filled with a recess CC formed between the stacked body IB and the terminal electrode WL. The side wall of the recess CC is constituted by the side surface of the insulating film stack IB and the side surface of the terminal electrode WL, and the side surface of the insulating film stack IB and the side surface of the terminal electrode WL are each tapered surfaces inclined at a predetermined angle. It has become. Further, the underlayer constituting the bottom of the recess CC may be constituted by extending the polysilicon layer PS constituting the underlayer of the terminal electrode WL as in the present embodiment, or insulated from the terminal electrode WL. The underlayer extending to the film stack IB may be configured, and the underlayer of the recess CC is not limited to the aspect of this embodiment.

  In this embodiment, the organic insulating film is filled with the resin layer PL in the recess CC in advance before the formation of the sealing layers P1 to P3, and the second sealing layer P2 is locally formed in the recess CC as shown in FIG. 6B. Thus, the manufacturing load is prevented from increasing. By reducing the step in the recess CC with the resin layer PL, the load of the etching process of the sealing layers P1 to P3 is reduced.

  Further, the resin layer PL will be described from another point of view. As shown in FIG. 3E, in the recess CC, the resin layer PL is in contact with the side surface of the insulating film laminate IB and the terminal electrode WL and the base layer. It is supposed to be covered. For this reason, the step due to the side wall of the recess CC is absorbed, and the adhesion of the inorganic insulating film such as the first sealing layer P1 that easily reflects the step due to the side wall of the recess CC is suppressed. .

  As shown in FIG. 6B, when the first sealing layer P1 adheres to the side wall or bottom of the recess CC, the step of the recess CC is maintained and the second sealing layer P2 (organic insulating film) is localized. In addition, when the material of the first sealing layer P1 and any insulating film in the insulating film stack IB are the same, the first sealing layer P1 There is a possibility that side etching is induced in the insulating film stack IB during etching. Such side etching may deteriorate the reliability of the terminal region TE and has been a problem in the manufacturing process in the terminal region TE. However, as in the present embodiment, before the sealing layer forming step. By maintaining the state in which the concave portion CC is filled with the resin layer PL, side etching of the insulating film IS2 and the polysilicon layer PS in the insulating film stacked body IB is prevented in advance.

  Next, the manufacturing process of the terminal region TE in the organic EL display device according to the present embodiment will be described with reference to FIGS. 3A to 3E and FIG. FIG. 4 shows a flowchart of the process for forming the terminal region TE.

  The manufacturing process of the terminal region TE described in FIGS. 3 and 4 proceeds simultaneously with the manufacturing process of the display region DP. Specifically, the step of forming the insulating film stack IB in S401 corresponds to the step of forming interlayer insulating layers (insulating layers IS1 to IS3) formed when the thin film transistor T1 is formed. The process of forming the terminal electrode WL corresponds to the process of forming the source / drain wiring. The filling process of the resin layer PL in S403 corresponds to the formation process of the planarization layer PL1 for reducing the level difference of the thin film transistor T1, and the formation of the first sealing layer P1 to the third sealing layer P3 in S404. The film process is a process common to the display region DP and the terminal region TE. The etching process of the first sealing layer P1 to the third sealing layer P3 in S405 is a process that does not exist in the manufacturing process of the display region DP.

  For this reason, in the present embodiment, the plurality of insulating films constituting the insulating film stacked body IB are formed of the same material and stacked structure as the interlayer insulating layer in the thin film transistor T1, and the terminal electrode WL is also connected to the thin film transistor T1. It is constituted by the same material and laminated structure as the source / drain wiring to be formed.

  Hereinafter, the manufacturing process of the terminal region TE will be described in order.

  First, as shown in FIG. 3A, insulating film laminates IB are formed at a plurality of locations in the terminal region TE to which the flexible printed board is connected (S401 in FIG. 4). This insulating film laminate IB is formed so as to be substantially parallel to the extending direction of the terminal wiring WL formed in S402. In the step of forming the insulating film stack IB in S401, first, a plurality of insulating layers IS1 to IS3 constituting the insulating film stack IB are sequentially stacked, and the processing of the thin film transistor T1 in the display region DP is performed together with the insulating film stacking. Etching is performed to secure a region for forming the terminal electrode WL between the bodies IB.

  Next, as shown in FIG. 3B, the terminal wiring WL is formed at a position that is a valley of each insulating film stack IB (S402 in FIG. 4). In the step of forming the terminal electrode WL in S402, first, the electrode layers W1 to W3 constituting the terminal electrode WL are sequentially formed, and then the shape of the terminal electrode WL is processed. The terminal electrode WL in the present embodiment is composed of three layers of electrode layers W1 to W3, and each material is titanium (Ti), aluminum (Al), and titanium, and the electrode layer W1 is arranged in order from the lower electrode layer W1. It shall be written as Ti / Al / Ti. In addition, since the terminal electrode WL is formed between the insulating film stack IB, a recess CC is formed between the insulating film stack IB and the terminal electrode WL.

  In particular, after the terminal electrode WL is formed, as shown in FIG. 3C, the resin layer PL made of a material such as acrylic is filled in each concave portion CC (S403 in FIG. 4). The resin layer PL in S403 is filled when the planarizing layer PL1 is formed, but is an organic insulating film that is filled when the planarizing layer PL2 and the bank layer BNK are deposited. There may be. In the step of S403 in this embodiment, the coating amount is controlled in consideration of a process such as annealing so that the resin layer PL is not filled in the concave portion CC and overflows the upper surface of the terminal electrode WL. .

  After the resin layer PL is filled in S403, as shown in FIGS. 3D and 3E, the first sealing layer P1 to the third sealing layer P3 are sequentially formed on the terminal region TE. The sealing layers P1 to P3 on the terminal region TE are removed by etching (S404 and S405 in FIG. 4). As can be seen by comparing FIG. 3D and FIG. 6B, the resin layer PL is pre-filled in the recess CC, so that the level difference due to the recess CC is reduced and the second sealing layer P <b> 2 formed of the organic insulating film is aggregated The formation is eliminated and the load of the step of etching the first sealing layer P1 to the third sealing layer P3 is alleviated.

  In the present embodiment, the first sealing layer P1 to the third sealing layer P3 shown in FIG. 3D have a thickness of 400 nm for the first sealing layer P1 made of silicon nitride, and are made of an organic insulating film. The second sealing layer P2 formed is 250 nm, and the third sealing layer P3 made of silicon nitride is 400 nm (in the case of FIG. 6B in which the resin layer PL is not filled in the concave portion CC, the concave portion CC is formed. The thickness of the aggregated second sealing layer P2 is about 800 nm). However, the first sealing layer P1 and the third sealing layer P3, which are inorganic insulating films containing silicon, may be 200 nm or more and 1000 nm or less, and as the second sealing layer P2 configured by the organic insulating film, It is good also as 100 nm or more and 500 nm or less. Moreover, 300 nm or more and 500 nm or less are suitable as the 1st sealing layer P1 and the 3rd sealing layer P3, and 100 nm or more and 250 nm or less are suitable as the 2nd sealing layer P2.

  In addition, as each insulating film constituting the insulating film stack IB in this embodiment, the insulating layer IS1 is 50 nm to 200 nm, the insulating layer IS2 is 300 nm to 400 nm, and the insulating layer IS3 is 300 nm to 400 nm. Is preferred. In addition, as the terminal electrode TE, the total thickness of the electrode layers W1 to W3 is preferably set to 600 nm or more and 800 nm or less, and the polysilicon layer PS may be set to about 50 nm. In the present embodiment, the upper surface of the insulating film stack IB is formed at a position higher than the upper surface of the terminal electrode WL. However, it is preferable that these upper surfaces are substantially flush with each other. .

  In the present embodiment, a process of forming the reflective electrode RF, the anode electrode An, the bank layer BNK, the organic light emitting layer OL, the cathode electrode Ca, and the like in the display region DP is performed between S403 and S404.

  In the present embodiment, the polysilicon layer PS is formed at a position that is a valley of the insulating film stacked body IB, and constitutes the bottom of the recess CC. The polysilicon layer PS is a layer formed at the same time as the channel layer in the thin film transistor T1, but may not necessarily be formed on the base of the terminal wiring WL or the bottom of the recess CC.

  In this embodiment, the top gate type organic EL display device is used. However, a bottom gate type organic EL display device may be used.

[Second Embodiment]
Next, the terminal area TE in the organic EL display device 1 according to the second embodiment of the present invention will be described.

  FIG. 5 is a diagram illustrating the structure of the terminal region TE in the second embodiment, and is a cross-sectional view corresponding to FIG. 3E in the first embodiment. As shown in the figure, in the terminal region TE in the second embodiment, the terminal electrode WL is covered with the metal thin film layer M1 made of the same material as the electrode layer constituting the organic EL element such as the anode electrode An. Thus, the metal thin film layer M1 is formed on the bottom surface from the side wall of the recess CC, and extends from the terminal electrode WL to the side surface and the top surface of the insulating film stacked body IB. Further, the resin layer PL in the second embodiment is made of the same material as that of the bank layer BNK.

  The organic EL display device 1 according to the second embodiment differs from the organic EL display device according to the first embodiment in this respect, but is substantially the same except for this point, and the configuration is almost the same. The description of is omitted as appropriate.

  The metal thin film layer M1 may be made of ITO, which is the same material as the anode electrode An, and may have a thickness of about 50 to 100 nm. Further, when the metal thin film layer M1 is made of ITO, the ITO is in contact with the resin layer PL, so that hydrogen diffuses from the resin layer PL due to the annealing of the resin layer PL and the conductivity of the metal thin film layer M1 is improved. It becomes.

  The metal thin film layer M1 formed on the side surface of the insulating film stack IB may be cut off. Therefore, as shown in FIG. 6B, when the first sealing layer P1 (inorganic insulating film) is formed in contact with the side surface of the insulating film stack IB in the recess CC, the etching of the first sealing layer P1 is performed. At this time, etching from the location where the film breakage proceeds may cause side etching in the insulating film stack IB.

  In addition, it cannot be overemphasized that this invention is not limited to said embodiment regarding material, thickness, and number of layers as insulating film laminated body IB (interlayer insulating layer), a terminal electrode WL, a sealing layer, etc.

  The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the configuration described in the embodiment can be replaced with a configuration that is substantially the same, a configuration that exhibits the same effects, or a configuration that can achieve the same purpose.

  1 organic EL display device, SB substrate, DP display region, PU sealing substrate, P1-P3 sealing layer, PL1-PL2 planarization layer, PL resin layer, IS1-IS3 insulating layer (interlayer insulating layer), T1 thin film transistor, OL organic light emitting layer, BNK bank layer, An anode electrode, Ca cathode electrode, RF reflection electrode, TE terminal region, WL terminal wiring, W1-W3 electrode layer, PS polysilicon layer, M1 metal thin film layer.

Claims (9)

A thin film transistor formed on a substrate;
A plurality of organic EL elements each having an organic light emitting layer connected to the thin film transistor;
A sealing layer for protecting the plurality of organic EL elements;
A terminal region formed at a position to be an end of the substrate, and an organic EL display device comprising:
The sealing layer is composed of a plurality of insulating films including an inorganic insulating film and an organic insulating film,
The terminal area is
Multiple terminal wires;
A plurality of insulating film laminates extending between each of the plurality of terminal wirings and formed by a plurality of insulating films;
A recess formed between each of the plurality of terminal wires and the plurality of insulating film stacks;
The side wall of the recess is formed by a side surface of the terminal wiring and a side surface of the insulating film laminate,
The recess is filled with a resin layer in contact with the side surface of the terminal wiring and the side surface of the insulating film laminate,
An organic EL display device characterized by that. A thin film transistor formed on a substrate;
A plurality of organic EL elements each having an organic light emitting layer connected to the thin film transistor;
A sealing layer for protecting the plurality of organic EL elements;
A terminal region formed at a position to be an end of the substrate, and an organic EL display device comprising:
The sealing layer is composed of a plurality of insulating films including an inorganic insulating film and an organic insulating film,
The terminal area is
Multiple terminal wires;
A plurality of insulating film stacks extending between each of the plurality of terminal wirings and formed by a plurality of insulating films;
A recess formed between each of the plurality of terminal wires and the plurality of insulating film stacks;
The recess further includes a metal thin film layer formed so as to extend from the side wall to the bottom of the recess,
The side wall of the recess is formed by the side surface of the terminal wiring and the side surface of the insulating film stack, and the metal thin film layer is formed in contact with the side surface of the terminal wiring and the side surface of the insulating film stack,
In the recess, the resin layer is filled in contact with the inside of the metal thin film layer.
An organic EL display device characterized by that. An organic EL display device according to claim 1 or 2,
The resin layer filled in the recess is made of the same material as the insulating film formed to separate the plurality of organic EL elements.
An organic EL display device characterized by that. An organic EL display device according to claim 1,
The resin layer filled in the recess is made of the same material as the insulating film for flattening the undulations formed by the thin film transistor.
An organic EL display device characterized by that. An organic EL display device according to claim 2,
The metal thin film layer is made of the same material as the electrode layer constituting the anode in the organic EL element.
An organic EL display device characterized by that. An organic EL display device according to claim 1 or 2,
The plurality of insulating films are constituted by interlayer insulating films stacked in a region where the thin film transistor is formed.
An organic EL display device characterized by that. An organic EL display device according to claim 1 or 2,
Any one of the plurality of insulating films in the insulating film stack is composed of the same material as the inorganic insulating film in the sealing layer.
An organic EL display device characterized by that. A plurality of organic EL elements each having an organic light emitting layer connected to the thin film transistor;
A method for manufacturing an organic EL display device, comprising: a plurality of terminal electrodes; and a terminal region including a plurality of insulating film laminates interposed between the plurality of terminal wirings,
Insulating film stack forming step of processing a plurality of insulating films formed to form the thin film transistor to form an insulating film stack at a plurality of locations;
Together with the source electrode and drain electrode in the thin film transistor, a terminal electrode forming step of forming terminal electrodes at a plurality of locations;
A resin layer filling step of filling a resin layer so as to be in contact with a side surface of the insulating film laminate and a side surface of the terminal electrode in a recess formed between the insulating film laminate and the terminal electrode;
A sealing layer laminating step for laminating a sealing layer for protecting the organic EL element so as to cover the terminal region filled with the resin layer in the recess and the plurality of organic EL elements;
Etching the sealing layer covering the terminal region to expose the terminal electrode;
A method for producing an organic EL display device, comprising: A plurality of organic EL elements each having an organic light emitting layer connected to the thin film transistor;
A method for manufacturing an organic EL display device, comprising: a plurality of terminal electrodes; and a terminal region including a plurality of insulating film laminates interposed between the plurality of terminal wirings,
Insulating film stack forming step of processing a plurality of insulating layers formed to form the thin film transistor to form an insulating film stack at a plurality of locations;
Together with the source electrode and drain electrode in the thin film transistor, a terminal electrode forming step of forming terminal electrodes at a plurality of locations;
A metal thin film layer forming step of forming an anode electrode in the organic EL element and forming a metal thin film layer extending from a sidewall to a bottom of a recess formed between the insulating film laminate and the terminal electrode;
A resin layer filling step of contacting the inside of the metal thin film layer formed in the recess and filling the recess with a resin layer;
A sealing layer laminating step for laminating a sealing layer for protecting the organic EL element so as to cover the terminal region in which the concave portion is filled with the resin layer and the plurality of organic EL elements;
Etching the sealing layer covering the terminal region, and
In the metal thin film forming step, the metal thin film layer is formed so as to be in contact with the upper surface and the side surface of the terminal electrode and the side surface of the insulating film laminate,
In the etching step, the sealing layer is etched so that the metal thin film layer formed on the upper surface of the terminal electrode is exposed.
An organic EL display device manufacturing method characterized by the above.

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