JP2015169680A - Liquid crystal display - Google Patents

Abstract

In a high-definition liquid crystal display device with a small pixel area, a wiring width is reduced and reflection from the wiring is reduced. Pixels are formed in a region surrounded by scanning lines extending in a first direction and arranged in a second direction and video signal lines extending in the second direction and arranged in the first direction. Is a liquid crystal display device in which liquid crystal is sandwiched between a TFT substrate formed in a matrix and a counter substrate on which a black matrix is formed, and the scanning line or the video signal line is on the counter substrate side of the surface of Mo. A liquid crystal display device having a structure in which MoN is formed, and the film thickness of MoN is 50 nm to 150 nm. [Selection] Figure 1

Description

  The present invention relates to a display device, and more particularly, to a liquid crystal display device with a small reduction in luminance and contrast even on a high-definition screen.

  A liquid crystal display panel used in a liquid crystal display device includes a TFT substrate in which pixels having a pixel electrode and a thin film transistor (TFT Thin Film Transistor) are formed in a matrix, a pixel electrode on the TFT substrate facing the TFT substrate, A counter substrate on which a black matrix, a color filter, and the like are formed is disposed at a corresponding location, and liquid crystal is sandwiched between the TFT substrate and the counter substrate. An image is formed by controlling the light transmittance of the liquid crystal molecules for each pixel.

  Since liquid crystal display devices are flat and lightweight, they are used in various fields. In a small-sized liquid crystal display device used for a mobile phone, a DSC (Digital Still Camera), and the like, a high-definition screen is required with a small pixel size. In the liquid crystal display device, for example, scanning lines extend in the horizontal direction of the screen and are arranged in the vertical direction of the screen. Further, the video signal lines extend in the vertical direction of the screen and are arranged in the horizontal direction of the screen.

  Conventionally, Cr has been used for such wiring. In order to prevent this reflection from Cr, Patent Document 1 describes a configuration that reduces reflection from the wiring by forming Cr oxide on the surface of the Cr wiring.

  In a liquid crystal display device using TFTs, conductive layers and insulating layers are formed in multiple layers. Therefore, the adhesion between these films becomes a problem. In addition, the adhesion between the wiring and the substrate becomes a problem. Patent Document 2 discloses a configuration in which MoN is formed in an upper layer and a lower layer of Mo in order to improve the adhesion between the wiring and the substrate or between the wiring and the insulating layer covering the wiring when Mo is used for the wiring. Have been described.

JP-A-9-61842 JP 2001-147424 A

  In the TFT substrate, for example, pixels are formed in a region surrounded by scanning lines extending in the horizontal direction and arranged in the vertical direction and video signal lines extending in the vertical direction and arranged in the horizontal direction. As the screen becomes higher in definition, the size of the pixel becomes smaller, and the proportion of wiring increases accordingly, and the transmittance of the liquid crystal display panel decreases. In order to prevent this, it is necessary to reduce the width of the wiring. Since metal is generally used for the wiring, the reflectance is large. Therefore, when the wiring is exposed, the contrast of the image is lowered.

  In order to prevent this, a black matrix is formed on the counter substrate corresponding to the wiring. The portion covered with the black matrix does not transmit light, and the opening of the black matrix contributes to the image. In the case of a high-definition screen, since the area of the black matrix opening is relatively small, the luminance is lowered.

  For this reason, the width of the black matrix cannot be made sufficiently large on a high-definition screen. In some cases, there is a case where a black matrix cannot be formed due to a request for screen luminance. In such a case, reflection from the wiring greatly affects the contrast of the image. Therefore, in a high-definition screen, it is necessary to reduce the wiring width and the reflection from the wiring as much as possible.

  As described in Patent Document 1, when Cr is used for the wiring, since Cr has a large resistance, it is difficult to sufficiently reduce the width of the wiring. Patent Document 1 describes forming Cr oxide on the surface of Cr in order to prevent reflection from Cr. However, Cr oxide is an insulator, for example, through a through hole. When connecting the lower layer wiring and the upper layer wiring, contact resistance becomes a problem.

  On the other hand, Patent Document 2 describes that Mo having a smaller resistance than Cr is used for wiring, and Mo—N is formed on the surface of Mo in order to improve the adhesive strength between Mo and the substrate or the insulating layer. Has been. However, since the configuration of Patent Document 2 is a configuration that increases the adhesive strength between the Mo wiring and the substrate or the insulating layer, the thickness of Mo—N is extremely small, for example, about 20 nm or less. If the Mo—N thickness is about this level, a sufficient antireflection effect cannot be obtained.

  The object of the present invention is to reduce the width of the wiring by forming the wiring with a low-resistance material, prevent reflection from the wiring, and suppress the decrease in screen brightness and contrast even when the screen becomes high definition. That is.

  The present invention overcomes the above problems, and specific means are as follows.

  (1) Pixels are located in a region surrounded by scanning lines extending in the first direction and arranged in the second direction and video signal lines extending in the second direction and arranged in the first direction. A liquid crystal display device in which liquid crystal is sandwiched between a TFT substrate formed in a matrix and a counter substrate on which a black matrix is formed, wherein the scanning line or the video signal line is the counter substrate on the surface of Mo A liquid crystal display device having a structure in which MoN is formed on the side, and the film thickness of the MoN is 50 nm to 150 nm.

  (2) Pixels are located in a region surrounded by the scanning lines extending in the first direction and arranged in the second direction and the video signal lines extending in the second direction and arranged in the first direction. A liquid crystal display device in which liquid crystal is sandwiched between a TFT substrate formed in a matrix and a counter substrate on which a black matrix is formed, wherein the scanning line or the video signal line is the counter substrate on the surface of Ti A liquid crystal display device having a structure in which TiN is formed on a side, and the thickness of the TiN is 50 nm to 150 nm.

  (3) Pixels are located in a region surrounded by the scanning lines extending in the first direction and arranged in the second direction and the video signal lines extending in the second direction and arranged in the first direction. A liquid crystal display device in which liquid crystal is sandwiched between a TFT substrate formed in a matrix and a counter substrate on which a black matrix is formed, wherein the scanning line or the video signal line is the counter substrate on the surface of Mo A liquid crystal display device having a structure in which ITO is formed on a side, and the film thickness of the ITO is 30 nm to 100 nm.

  (4) The liquid crystal display device according to (3), wherein the ITO film has a thickness of 40 to 90 nm.

  (5) Pixels are located in a region surrounded by the scanning lines extending in the first direction and arranged in the second direction and the video signal lines extending in the second direction and arranged in the first direction. A liquid crystal display device in which liquid crystal is sandwiched between a TFT substrate formed in a matrix and a counter substrate on which a black matrix is formed, wherein the scanning line or the video signal line is the counter substrate on the surface of Ti A liquid crystal display device having a structure in which ITO is formed on a side, and the film thickness of the ITO is 30 nm to 100 nm.

  (6) The liquid crystal display device according to (5), wherein the ITO film has a thickness of 40 to 90 nm.

  (7) Pixels are located in a region surrounded by scanning lines extending in the first direction and arranged in the second direction and video signal lines extending in the second direction and arranged in the first direction. A liquid crystal display device in which liquid crystal is sandwiched between a TFT substrate formed in a matrix and a counter substrate on which a black matrix is formed, wherein the scanning line or the video signal line is the counter substrate on the surface of Mo MoN is formed on the side, ITO is formed on the surface of the MoN, the film thickness of the MoN is 50 nm to 150 nm, and the film thickness of the ITO is 30 nm to 100 nm. A liquid crystal display device.

(8) Pixels are located in a region surrounded by the scanning lines extending in the first direction and arranged in the second direction and the video signal lines extending in the second direction and arranged in the first direction. A liquid crystal display device in which liquid crystal is sandwiched between a TFT substrate formed in a matrix and a counter substrate on which a black matrix is formed,
The scanning line or the video signal line has a configuration in which TiN is formed on the counter substrate side of the Ti surface and ITO is formed on the TiN surface, and the film thickness of the TiN is 50 nm to 150 nm. The ITO film thickness is 30 nm to 100 nm.

  According to the present invention, since the resistance of the wiring resistance can be reduced and the reflectance of the wiring surface can be reduced, the reduction in luminance is suppressed and the reduction in the contrast of the image is prevented even in a high-definition screen. I can do it.

It is a top view of the pixel part of a TFT substrate. It is sectional drawing of the pixel part of a TFT substrate. 1 is a wiring structure of Example 1. It is a graph which shows the relationship between the film thickness of MoN, and a reflectance. Example 1 Another wiring structure. Example 1 Still another wiring structure. 6 is a wiring structure of Example 2. It is a graph which shows the relationship between the film thickness of ITO, and a reflectance. 6 shows another wiring structure of the second embodiment. 6 shows still another wiring structure of the second embodiment. 6 shows another wiring structure of the third embodiment. It is sectional drawing of the pixel part of a TFT substrate. 6 is still another wiring structure of the third embodiment.

  Hereinafter, the contents of the present invention will be described in detail with reference to examples.

  FIG. 1 is a plan view of a pixel portion of an IPS liquid crystal display device. A viewing angle is a problem in the liquid crystal display device. The IPS liquid crystal display device controls the transmittance of a pixel by rotating liquid crystal molecules by an electric field in a direction parallel to the substrate, and has excellent viewing angle characteristics. Although an IPS liquid crystal display device will be described below as an example, the present invention is not limited to an IPS liquid crystal display device, but can be applied to other liquid crystal display devices.

  In FIG. 1, the scanning lines 10 extend in the horizontal direction and are arranged in the vertical direction at a first pitch. The video signal lines 20 extend in the vertical direction and are arranged in the horizontal direction at the second pitch. Pixels are formed in a region surrounded by the scanning lines 10 and the video signal lines 20.

  A TFT is formed below the pixel. The TFT in FIG. 1 is a so-called top gate type TFT in which the gate electrode 104 exists above the semiconductor layer 102. In addition, poly-Si is used for the semiconductor layer 102. However, the present invention can be applied to a case where the gate electrode 104 is a so-called bottom gate above the semiconductor layer 102, and can also be applied to a case where the semiconductor layer is a-Si.

  In FIG. 2, the drain 1021 of the TFT semiconductor layer 102 is connected to the video signal line through a through hole 150. The video signal line 20 also serves as the drain electrode in FIG. The source 1022 of the TFT is connected to the source electrode 106 through the through hole 140. A gate electrode 104 branched from the scanning line 10 exists on the semiconductor layer 102. In FIG. 1, the pixel electrode 112 is connected to the source electrode 106 through the through hole 130. The pixel electrode 112 has a comb shape.

  Under the pixel electrode 112, the common electrode 110 is formed in a planar shape via a second interlayer insulating film not shown in FIG. The common electrode 110 in FIG. 1 is wide in the extending direction of the scanning line 10 and extends in common to each pixel. When a video signal is supplied to the pixel electrode 112 through the TFT, as shown in FIG. 2, electric lines of force are formed from the pixel electrode 112 through the liquid crystal layer through the slit 1121 of the pixel electrode 112 and formed in the lower layer. The common electrode 110 extends. The liquid crystal molecules are rotated by the lateral component of the electric lines of force, and the light transmittance of the pixel is controlled.

FIG. 2 is a cross-sectional view of the pixel structure described in FIG. In FIG. 2, a base film 101 is formed of SiN or SiO ₂ on a TFT substrate 100 made of glass. The role of the base film 101 is to prevent glass impurities from entering the semiconductor layer 102. In FIG. 2, the base film 101 is one layer, but two layers may be formed. In this case, the lower layer is often an SiN film and the upper layer is an SiO ₂ film.

  In FIG. 2, the semiconductor layer 102 is formed on the base film 101. The semiconductor layer 102 is made of poly-Si. The poly-Si is formed by first forming a-Si by CVD and converting it to poly-Si by laser annealing. A gate electrode 104 is formed on the semiconductor layer 102 via a gate insulating film 103, and this portion of the semiconductor layer 102 forms a channel portion of the TFT. The semiconductor layer 102 other than the portion covered with the gate electrode 104 is doped with an impurity such as P or B. For example, the drain 1021 is formed on the left side of the semiconductor layer 102 and the source 1022 is formed on the right side.

  A first interlayer insulating film 107 is formed on the gate electrode 104 to insulate the gate electrode 104 or the scanning line from the source electrode 106 formed in the same layer as the video signal line 20 or the video signal line 20. In FIG. 2, the drain 1021 of the semiconductor layer 102 is connected to a drain electrode shared by the video signal line 20 through a through hole 150 formed in the first interlayer insulating film 107. Further, the source 1022 of the semiconductor layer 102 is connected to the source electrode 106 through the through hole 140 formed in the first interlayer insulating film 107.

  An inorganic passivation film 108 is formed on the first interlayer insulating film 107 to protect TFTs, video signal lines and the like. On the inorganic passivation film 108, an organic passivation film 109 serving also as a planarization film is formed. The organic passivation film 109 is formed as thick as 1 to 3 μm. On the organic passivation film 109, the common electrode 110 is formed in a planar shape as described with reference to FIG. A second interlayer insulating film 111 is formed on the common electrode 110, and a comb-like pixel electrode 112 having a slit 1121 is formed on the second interlayer insulating film 111.

  A video signal is supplied to the pixel electrode 112 from the source electrode 106 through a through hole 130 formed in the inorganic passivation film 108 and the organic passivation film 109. When a video signal is supplied to the pixel electrode 112, electric lines of force are formed on the lower common electrode 110 via the liquid crystal layer and the slit 1121, as shown in FIG. The liquid crystal molecules 301 are rotated by the horizontal component of the electric field, and the transmittance of the pixel is controlled.

  Although not shown in FIG. 2, a counter electrode is formed facing the TFT substrate 100, and a liquid crystal layer is sandwiched between the TFT substrate and the counter electrode. In the counter substrate, a color filter is formed in a portion corresponding to the pixel of the TFT substrate, and a black matrix is formed between the color filter and the color filter to prevent color mixture between pixels and unnecessary from the backlight. Therefore, the contrast of an image is improved by blocking extraneous light or preventing reflection of outside light.

  When the screen becomes high definition, the area of the pixel is reduced, and the relative area of the pixel electrode that contributes to image formation is reduced in the pixel. The peripheral portion of the pixel that does not form an image is shielded from light by the black matrix. However, if the width of the black matrix is increased in order to block light, the opening of the black matrix is reduced, the transmittance of the pixel is lowered, and the screen brightness is lowered.

  In order to prevent this, it is necessary to make the width of the black matrix as small as possible, or in some cases, to partially omit the black matrix. However, since the scanning lines and the video signal lines are made of metal, if they are not covered with the black matrix, the external light is reflected by the scanning lines and the video signal lines, and the contrast of the image is lowered.

For example, the scanning line is conventionally formed of Mo. The reflectance of Mo is about 60%. For example, conventionally, video signal lines are mainly made of Al, and Mo is used for an Al lower layer (barrier layer) and an upper layer (cap layer). The role of the barrier layer or cap layer is to prevent Al hillocks from growing and causing dielectric breakdown. The barrier layer also has a role to prevent Al from contaminating the semiconductor layer, and the cap layer prevents Al ₂ O _{3 from} being formed on the surface of Al, thereby increasing contact resistance in the through hole.

  Thus, when Mo is used, the reflectivity is large, and when the light cannot be shielded by the black matrix, reflection from the wiring becomes a problem. In addition, although the case where Cr is used for the wiring is described in Patent Document 1, the specific resistance of Cr is 12.7 μΩcm, which is larger than 5.07 μΩcm in the case of Mo. Therefore, when the wiring width is reduced, a problem of wiring resistance occurs.

  In the present invention, for example, when Mo is used for the scanning line, MoN having a reflectance lower than that of Mo is formed on the Mo surface to reduce reflection from the wiring. As a result, even when the wiring portion cannot be sufficiently shielded by the black matrix, reflection from the wiring can be prevented and a reduction in the contrast of the image can be prevented. In the following description, it is assumed that the contrast of the image is lowered by the metal wiring. This means that the metal wiring is not shielded by the black matrix or is not sufficiently shielded from light.

  FIG. 3 shows an example in which the scanning line is formed of MoN, for example. Mo is formed by sputtering. After forming Mo to a predetermined thickness, for example, 100 nm to 200 nm, nitrogen is introduced into the chamber and sputtering is performed to form MoN. In the specification, MoN nitride is represented by MoN. Depending on the formation conditions, MoNx may be formed, but in this specification, such Mo nitride is also included.

  The reflectance of such wiring depends on the thickness of MoN formed on the Mo surface. FIG. 4 is a graph showing the relationship between the thickness of MoN formed on the Mo surface and the reflectance. The horizontal axis is the thickness of MoN, and the vertical axis is the reflectance. When the surface is Mo, the reflectance is about 60%. When MoN is formed on the surface, the reflectance decreases as the film thickness increases. In FIG. 4, the reflectance decreases to about 40% at about 50 nm and decreases to 30% at 150 nm.

  On the other hand, since MoN has a higher resistivity than Mo, the contact resistance in the through hole increases as the thickness of MoN increases. Since the specific resistance of MoN is about 6000 μΩcm, there is almost no influence on the contact resistance if the thickness is 150 nm. Thus, in the present invention, MoN formed on the surface of Mo is 50 nm to 150 nm, thereby suppressing reflection from the wiring without increasing contact resistance. Moreover, since this invention suppresses reflection of the external light from wiring, MoN should just be formed in the opposing board | substrate side of Mo wiring.

  In Patent Document 2, it is described that MoN is formed on the surface of the Mo wiring. However, in Patent Document 2, the purpose of forming MoN is to provide an adhesive force with a film formed in an upper layer or a lower layer. Therefore, the film thickness to be formed is 20 nm or less, and there is almost no antireflection effect.

  Even in the case of a scanning line, Al may be formed in the lower layer of Mo in order to reduce the wiring resistance. In this case, MoN is formed on the Mo surface as described above. Similarly, reflection from the wiring can be prevented.

  Conventionally, the video signal line is mainly made of Al, and Mo is used for the lower layer (barrier layer) and the upper layer (cap layer) of Al. In this case, it is the same that the contrast of the image decreases due to the reflection of Mo on the cap layer. Therefore, as shown in FIG. 5, in this case as well, by forming MoN on the Mo surface, similarly to the scanning lines described above, reflection from the video signal line is suppressed, and a decrease in contrast of the image is suppressed. I can do it.

  In the video signal line, Al is mainly used, and Ti may be used for the lower layer (barrier layer) and the upper layer (cap layer) of Al. Also in this case, the reflectance from Ti can be prevented by forming TiN on the surface of Ti. The reflectance of Ti is the same as that of Mo. The film thickness dependence of the reflectance of TiN is the same as the film thickness dependence of the reflectance of MoN shown in FIG. Furthermore, the specific resistance of TiN is the same as that of MoN.

  Therefore, when Ti is mainly used and Ti is used for the lower layer (barrier layer) and upper layer (cap layer) of Al, as shown in FIG. 6, by forming TiN on the Ti surface of the cap layer, Light reflection can be prevented. As described above, the film thickness of TiN in this case is preferably 50 nm to 150 nm.

  In FIG. 7, when Mo wiring is used for the scanning line, ITO (Indium Tin Oxide) is formed on the Mo surface in order to prevent reflection from the wiring. Since ITO has a large refractive index, reflection can be suppressed by the interference effect when a certain range of film thickness is formed on the Mo surface.

  FIG. 8 is a graph showing the relationship between the ITO film thickness and the reflectance when ITO is formed on the Mo surface. In FIG. 8, the reflectance when the surface is Mo is 60%. As ITO is deposited on the Mo surface, the reflectance decreases. When the ITO film thickness is about 60 nm, the reflectance decreases to about 16%. When the ITO film thickness is further increased, the reflectivity increases and reaches about 40% at 100 nm.

  Thus, the reflectance can be lowered by forming a predetermined range of ITO on the Mo surface. As shown in FIG. 8, the preferred film thickness of ITO is 30 nm to 100 nm, and within this range, the reflectance can be 40% or less. A more preferable range of the film thickness is 40 nm to 90 nm. With this range, the reflectance can be suppressed to 30% or less. Since the specific resistance of ITO is about 130 μΩcm, if it is 50 nm to 100 nm, there is almost no influence on the contact resistance in the through hole.

  In this case, ITO can also be formed by sputtering. That is, after Mo is formed by sputtering, the sputtering target may be changed to ITO, and ITO may be sputtered to a predetermined thickness. Even in the case of scanning lines, Al may be formed in the lower layer of Mo in order to reduce the wiring resistance. In this case as well, as described above, ITO is formed on the Mo surface. Similarly, reflection from the wiring can be prevented.

  Conventionally, video signal lines are mainly made of Al, and Mo is used for the lower layer (barrier layer) and upper layer (cap layer) of Al. In this case, it is the same that the contrast of the image decreases due to the reflection of Mo on the cap layer. FIG. 9 shows a configuration of a video signal line according to the present invention, in which an ITO film is formed on a cap layer made of Mo. In the configuration of FIG. 9 as well, the reflection from Mo can be suppressed as described in FIG. In this case, a preferable range of the thickness of the ITO film is 30 nm to 100 nm, and a more preferable range is 40 nm to 90 nm.

  As another configuration of the video signal line, there is a case where Al is mainly used and Ti is used for a lower layer (barrier layer) and an upper layer (cap layer) of Al. Also in this case, the reflectance of Ti used as a cap layer becomes a problem, and the contrast of the image is lowered. In FIG. 10, the reflection from Ti can be reduced by forming ITO in the cap layer on the surface of the wiring having this configuration. In this case, the preferred thickness of ITO is also 30 nm to 100 nm, and a more preferable range is 40 nm to 90 nm.

  FIG. 11 shows a configuration for suppressing the reflectance of the Mo wiring according to the third embodiment. In FIG. 11, MoN is formed on Mo and ITO is further formed thereon. As shown in FIG. 8, the preferred film thickness of ITO is 30 nm to 100 nm, and the more preferable range is 40 nm to 90 nm. This range is not greatly affected by the underlying film. MoN is formed under the ITO. A suitable film thickness of MoN is 50 nm to 150 nm as described in the first embodiment.

  According to the present embodiment, since there is a synergistic effect of reducing the reflectance by ITO and the reflectance by MoN, the reflectance of the wiring can be greatly reduced. On the other hand, for the contact resistance in the through-hole portion, the specific resistance of MoN is 6000 μΩ and the specific resistance of ITO is 130 μΩcm, so even if ITO is present, the contact resistance is almost the same as in the case of MoN alone. . Accordingly, in this case, there is no problem with the contact resistance in the through hole.

  FIG. 12 is a cross-sectional view showing a configuration in which MoN and ITO are laminated in a video signal line or the like, which is mainly composed of Al and uses Mo for the lower layer (barrier layer) and upper layer (cap layer) of Al. is there. Similarly to the case of the Mo1 layer alone, the reflection by the wiring can be greatly reduced by forming MoN and ITO on the cap layer Mo. Suitable film thicknesses of MoN and ITO are the same as those described with reference to FIG.

  FIG. 13 is a cross-sectional view showing a configuration in which TiN and ITO are laminated in a video signal line or the like, which is mainly composed of Al and uses Ti in the lower layer (barrier layer) and upper layer (cap layer) of Al. is there. Similar to the case of FIG. 11 or FIG. 12, by forming TiN and ITO on the cap layer Ti, reflection by wiring can be greatly reduced.

  Suitable film thicknesses of ITO and TiN are the same as described in FIG. That is, the preferable film thickness of ITO is 30 nm to 100 nm, and the more preferable range is 40 nm to 90 nm. A suitable film thickness of TiN is 50 nm to 150 nm. In this case, the contact resistance in the through hole is about 6000 μΩ and the specific resistance of ITO is about 130 μΩcm. Therefore, even if ITO is present, the contact resistance is almost the same as that of TiN alone. Accordingly, in this case, there is no problem with the contact resistance in the through hole.

  In the above description, Mo is used for the scanning line, and Al is mainly used, and the lower layer (barrier layer) and upper layer (cap layer) of Mo are used. The structure using Ti for the barrier layer) and the upper layer (cap layer) has been described as being used for the video signal line. However, Mo is used for the video signal line, mainly Al, and the lower layer (barrier layer) of Al and A configuration using Mo for the upper layer (cap layer), or a configuration using mainly Al and using Ti for the lower layer (barrier layer) and the upper layer (cap layer) of Al may be used for the scanning lines. In this case, the present invention can be applied without any problem.

  In the above description, Mo is used for the wiring. However, the present invention can be similarly applied to an alloy such as MoW. In such a case, the antireflection film formed on the surface is MoWN. Further, in the above description, a configuration in which Al is mainly used and Mo is used for an Al lower layer (barrier layer) and an upper layer (cap layer), or an Al lower layer (barrier layer) and an upper layer (cap) are mainly made of Al. The structure using Ti for the layer) has been described, but in this case as well, an alloy such as AiSi is generally used for Al, but the present invention can be applied without any problem.

  In the above embodiment, in order to reduce the reflectance, an example in which ITO is formed on the outermost surface of the wiring has been shown. However, the present invention is not limited to ITO, but instead of ITO, IZO (Indium Zinc Oxide) or IGO ( Indium Garium Oxide) can also be used. An appropriate film thickness range in this case can be determined according to the case of ITO.

  DESCRIPTION OF SYMBOLS 10 ... Scanning line, 20 ... Video signal line, 100 ... TFT substrate, 101 ... Base film, 102 ... Semiconductor layer, 103 ... Gate insulating film, 104 ... Gate electrode, 105 ... Drain electrode, 106 ... Source electrode, 107th DESCRIPTION OF SYMBOLS 1 interlayer insulation film 108 ... inorganic passivation film 109 ... organic passivation film 110 ... common electrode 111 ... 2nd interlayer insulation film 112 ... pixel electrode 130 ... through hole 140 ... through hole 150 ... through hole, 301 ... Liquid crystal molecules, 1021 ... Drain, 1022 ... Source, 1121 ... Slit

Claims (14)

Pixels are arranged in a matrix in a region surrounded by scanning lines arranged in the first direction and arranged in the second direction and video signal lines arranged in the second direction and arranged in the first direction. A liquid crystal display device in which a liquid crystal is sandwiched between a formed TFT substrate and a counter substrate on which a black matrix is formed,
The scanning line or the video signal line has a configuration in which MoN is formed on the opposite substrate side of the surface of Mo, and the film thickness of the MoN is 50 nm to 150 nm. .   The video signal line is mainly composed of Al or Al alloy, a lower layer Mo is formed in a lower layer of Al or Al alloy, and an upper layer Mo is formed in an upper layer, and the MoN is formed on the upper layer Mo. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is a liquid crystal display device. Pixels are arranged in a matrix in a region surrounded by scanning lines arranged in the first direction and arranged in the second direction and video signal lines arranged in the second direction and arranged in the first direction. A liquid crystal display device in which a liquid crystal is sandwiched between a formed TFT substrate and a counter substrate on which a black matrix is formed,
The scanning line or the video signal line has a configuration in which TiN is formed on the counter substrate side of the Ti surface, and the thickness of the TiN is 50 nm to 150 nm. .   The video signal line is mainly composed of Al or an Al alloy, a lower layer Ti is formed in a lower layer of the Al or Al alloy, and an upper layer Ti is formed in an upper layer, and the TiN is formed on the upper layer Ti. The liquid crystal display device according to claim 3, wherein the liquid crystal display device is a liquid crystal display device. Pixels are arranged in a matrix in a region surrounded by scanning lines arranged in the first direction and arranged in the second direction and video signal lines arranged in the second direction and arranged in the first direction. A liquid crystal display device in which a liquid crystal is sandwiched between a formed TFT substrate and a counter substrate on which a black matrix is formed,
The scanning line or the video signal line has a configuration in which ITO is formed on the opposite substrate side of the surface of Mo, and the thickness of the ITO is 30 nm to 100 nm. .   6. The liquid crystal display device according to claim 5, wherein the thickness of the ITO is 40 to 90 nm.   The video signal line is mainly composed of Al or Al alloy, a lower layer Mo is formed in a lower layer of Al or Al alloy, and an upper layer Mo is formed in an upper layer, and the ITO is formed on the upper layer Mo. The liquid crystal display device according to claim 5, wherein the liquid crystal display device is a liquid crystal display device. Pixels are arranged in a matrix in a region surrounded by scanning lines arranged in the first direction and arranged in the second direction and video signal lines arranged in the second direction and arranged in the first direction. A liquid crystal display device in which a liquid crystal is sandwiched between a formed TFT substrate and a counter substrate on which a black matrix is formed,
The scanning line or the video signal line has a configuration in which ITO is formed on the counter substrate side of the surface of Ti, and the film thickness of the ITO is 30 nm to 100 nm. .   9. The liquid crystal display device according to claim 8, wherein the thickness of the ITO is 40 to 90 nm.   The video signal line is mainly composed of Al or Al alloy, a lower layer Ti is formed in a lower layer of Al or Al alloy, and an upper layer Ti is formed in an upper layer, and the ITO is formed on the upper layer Ti. The liquid crystal display device according to claim 8, wherein the liquid crystal display device is a liquid crystal display device. Pixels are arranged in a matrix in a region surrounded by scanning lines arranged in the first direction and arranged in the second direction and video signal lines arranged in the second direction and arranged in the first direction. A liquid crystal display device in which a liquid crystal is sandwiched between a formed TFT substrate and a counter substrate on which a black matrix is formed,
The scanning line or the video signal line has a configuration in which MoN is formed on the opposite substrate side of the surface of Mo and ITO is formed on the surface of the MoN, and the film thickness of the MoN is 50 nm to 150 nm. The ITO film thickness is 30 nm to 100 nm.   The video signal line is mainly composed of Al or Al alloy, a lower layer Mo is formed in a lower layer of Al or Al alloy, and an upper layer Mo is formed in an upper layer. The MoN and the ITO are formed of the upper layer Mo. The liquid crystal display device according to claim 11, wherein the liquid crystal display device is formed above. Pixels are arranged in a matrix in a region surrounded by scanning lines arranged in the first direction and arranged in the second direction and video signal lines arranged in the second direction and arranged in the first direction. A liquid crystal display device in which a liquid crystal is sandwiched between a formed TFT substrate and a counter substrate on which a black matrix is formed,
The scanning line or the video signal line has a configuration in which TiN is formed on the counter substrate side of the Ti surface and ITO is formed on the TiN surface, and the film thickness of the TiN is 50 nm to 150 nm. The ITO film thickness is 30 nm to 100 nm.   The video signal line is mainly composed of Al or Al alloy, a lower layer Ti is formed in a lower layer of Al or Al alloy, and an upper layer Ti is formed in an upper layer. The TiN and the ITO are formed of the upper layer Ti. The liquid crystal display device according to claim 13, wherein the liquid crystal display device is formed over the liquid crystal display device.

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