JP2015133838A - Apparatus direct connection terminal and assembly method for apparatus direct connection terminal - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus direct connection terminal capable of keeping insulation performance between an outer semiconductive layer and an electrical apparatus, and an assembly method for the apparatus direct connection terminal.SOLUTION: An apparatus direct connection terminal includes: an insulation layer into which a bushing of an electrical apparatus is fitted and a power cable is inserted, and inside which a conductor provided at the center of the bushing and a cable conductor provided at the center of a power cable are connected; an outer semiconductive layer which is connected with a conductive cable shield layer provided outside the cable conductor of the power cable, is provided so as to cover the insulation layer, and is provided apart from the insulation layer's tip on the electrical apparatus side; and an insulation part which covers the insulation layer's tip on the electrical apparatus side and the outer semiconductive layer's tip on the electrical apparatus side, and is provided separately from the insulation layer.

Description

  The present invention relates to a device direct connection terminal and an assembly method of the device direct connection terminal.

  In order to connect a power cable to an electric device, a device direct connection terminal is used. The device direct connection terminal has an insulating layer into which a bushing of an electric device is fitted and a power cable is inserted. Inside the insulating layer, the bushing conductor and the cable conductor of the power cable are connected. On the other hand, an external semiconductive layer is provided outside the insulating layer of the device direct connection terminal. The external semiconductive layer of the device direct connection terminal is provided so as to be electrically connected to the cable shielding layer of the power cable and cover the insulating layer of the device direct connection terminal. Thereby, the apparatus direct connection terminal is electrostatically shielded, and the leakage of the electric field applied to the insulating layer to the outside is suppressed.

  Here, normally, the external semiconductive layer of the device direct connection terminal and the grounding portion (side wall) of the electric device are electrically connected, but the external semiconductive layer of the device direct connection terminal and the grounding portion of the electric device are electrically connected. It may be necessary to insulate.

  Therefore, for example, it is disclosed that the external semiconductive layer of the device direct connection terminal is provided with a space from the tip of the insulating layer on the electric device side to insulate the external semiconductive layer from the electric device (for example, Patent Document 1).

JP 2011-15511 A

  However, in the configuration described in Patent Document 1, since the tip of the insulating layer of the device direct connection terminal on the electric device side is exposed from the external semiconductive layer, the surface of the insulating layer may be contaminated. For this reason, the dielectric strength between the external semiconductive layer of an apparatus direct connection terminal and an electric equipment may fall.

  The objective of this invention is providing the assembly method of the apparatus direct connection terminal which can maintain the insulation performance between an external semiconductive layer and an electric equipment, and an apparatus direct connection terminal.

According to a first aspect of the invention,
An insulating layer in which a bushing of an electric device is fitted and a power cable is inserted, and a cable conductor provided in the center of the bushing and a conductor provided in the center of the power cable are connected inside,
It is connected to a conductive cable shielding layer provided outside the cable conductor of the power cable, is provided so as to cover the insulating layer, and is provided at a distance from the tip of the insulating layer on the electric equipment side. An external semiconductive layer;
An insulating portion that covers a tip of the insulating layer on the electrical device side and a tip of the external semiconductive layer on the electrical device side;
Have
A device direct connection terminal provided as a separate body from the insulating layer is provided for the insulating portion.

According to a second aspect of the invention,
The apparatus direct connection terminal according to the first aspect, in which the insulating portion has a convex portion protruding in a direction perpendicular to a direction in which the bushing is fitted to the insulating layer.

According to a third aspect of the invention,
The apparatus direct connection terminal as described in the 2nd aspect with which the said convex part is provided so that the front end at the side of the said electric equipment of the said insulating layer may be enclosed is provided.

According to a fourth aspect of the invention,
As for the said insulation part, the apparatus direct connection terminal in any one of the 1st-3rd aspect comprised from insulating rubber is provided.

According to a fifth aspect of the present invention,
A bushing of an electric device is fitted into an insulating layer of a device direct connection terminal, a power cable is inserted, a conductor provided at the center of the bushing, and a cable conductor provided at the center of the power cable, the insulating layer A process of connecting inside,
An external semiconductive layer provided so as to cover the insulating layer of the device direct connection terminal and spaced from the tip of the insulating layer on the electric device side, and provided outside the cable conductor of the power cable. Connecting a conductive cable shielding layer;
A step of disposing an insulating portion provided separately from the insulating layer so as to cover a tip of the insulating layer on the electric device side and a tip of the external semiconductive layer on the electric device side;
A method of assembling a device direct connection terminal is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the assembly method of the apparatus direct connection terminal which can maintain the insulation performance between an external semiconductive layer and an electric equipment, and an apparatus direct connection terminal is provided.

(A) is sectional drawing which shows the apparatus direct connection terminal which concerns on 1st Embodiment of this invention, (b) is sectional drawing which expanded a part of (a). (A) is sectional drawing which shows the apparatus direct connection terminal which concerns on 2nd Embodiment of this invention, (b) is sectional drawing which expanded a part of (a). (A) is sectional drawing which shows the apparatus direct connection terminal which concerns on a comparative example, (b) is sectional drawing which expanded a part of (a).

<First Embodiment of the Present Invention>
(1) Structure of apparatus direct connection terminal The power cable which concerns on 1st Embodiment of this invention is demonstrated using FIG. Fig.1 (a) is sectional drawing which shows the apparatus direct connection terminal based on this embodiment, FIG.1 (b) is sectional drawing to which a part of (a) was expanded.

  The device direct connection terminal 10 of the present embodiment is configured to maintain the insulation performance between the external semiconductive layer 230 covering the outer periphery of the insulating layer 220 and the electric device 50 by the insulating portion 300 provided separately from the insulating layer 220. Is done. Details will be described below.

  As shown in FIG. 1A, the device direct connection terminal 10 is configured to connect the bushing 500 of the electric device 50 and the power cable 100. The apparatus direct connection terminal 10 is, for example, T-shaped. The bushing 500 of the electric device 50 and the power cable 100 are connected so as to be orthogonal to each other via the device direct connection terminal 10.

  The apparatus direct connection terminal 10 includes an inner semiconductive layer 210 provided at the center, an insulating layer 220 covering the outer periphery of the inner semiconductive layer 210, and an outer semiconductive layer 230 covering the outer periphery of the insulating layer 220. For example, the inner semiconductive layer 210 is made of EP rubber (ethylene / propylene rubber) and carbon black. The insulating layer 220 is made of an insulating rubber, specifically, for example, EP rubber (ethylene / propylene rubber) or silicon rubber. Thereby, the bushing 500 and the power cable 100 of the electric device 50 are firmly fixed. The outer semiconductive layer 230 is made of the same material as the inner semiconductive layer 210. For example, the inner semiconductive layer 210, the insulating layer 220, and the outer semiconductive layer 230 are integrally formed.

  A substantially T-shaped gap is provided inside the device direct connection terminal 10. The insulation layer 220 of the device direct connection terminal 10 is provided with a fitting portion 222 into which the bushing 500 of the electric device 50 is fitted, and an insertion in which the cable insulation layer 130 of the power cable 100 is inserted in a direction perpendicular to the fitting portion 222. Part 224. For example, the fitting portion 222 is provided along the T-shaped horizontal image portion, and the insertion portion 224 is provided along the T-shaped vertical image portion.

  The electric device 50 fitted into the fitting portion 222 is, for example, any one of a switch, a branch device, a transformer, and the like. Moreover, the shape of the bushing 500 of the electric equipment 50 is a truncated cone, for example. The bushing 500 of the electric device 50 includes a bushing conductor 520 provided at the center and made of a conductor, and a bushing insulating layer 540 made of an insulator that covers the outer periphery of the bushing conductor 520. A screw hole 522 into which a bolt 290 described later is screwed is provided at the tip of the bushing conductor 520.

  On the other hand, the power cable 100 inserted into the insertion portion 224 is configured as, for example, a cross-linked polyethylene insulated PVC sheathed cable (CV cable). Specifically, the cable conductor 110 extends from the center toward the outside. A cable inner semiconductive layer (not shown), a cable insulating layer 130, a cable outer semiconductive layer 140, a cable shielding layer 150, and a cable sheath (covering layer) 160.

  The cable conductor 110, the cable insulation layer 130, the cable outer semiconductive layer 140, the cable shielding layer 150, and the cable sheath 160 of the power cable 100 are peeled off step by step (stepped off). ) A compression terminal 280 is connected to the tip of the power cable 100 (cable conductor 110) by compression. On the opposite side of the compression terminal 280 to the side where the cable conductor 110 of the power cable 100 is connected, a through opening (not shown) for the purpose of inserting the bolt 290 into the bushing conductor 520 is provided. The bolt 290 is fixed to the screw hole 522 of the bushing conductor 520 through the through opening of the compression terminal 280. Thereby, the bushing conductor 520 and the cable conductor 110 of the power cable 100 are electrically connected inside the insulating layer 220.

  An insulating plug 260 is fitted and provided on the side opposite to the fitting portion 222 into which the bushing 500 of the device direct connection terminal 10 is fitted. The insulating plug 260 is provided so as to cover the head of the bolt 290 connecting the bushing 500 and the compression terminal 280. The insulating plug 260 is made of the same material as that of the insulating layer 220, for example. Further, the outer semiconductive layer 230 of the device direct connection terminal 10 is provided outside the insulating plug 260. Furthermore, an electrode for voltage detection may be provided outside the insulating plug 260.

  In addition, an inner semiconductive layer 210 of the device direct connection terminal 10 is provided from the outside of the cable conductor 110 of the power cable 100 to the outside of the compression terminal 280 in the central portion of the device direct connection terminal 10. Further, the insulating layer 220 of the device direct connection terminal 10 is provided so as to cover the cable insulation layer 130 of the power cable 100 and the internal semiconductive layer 210 of the device direct connection terminal 10.

  Of the power cable 100 peeled in stages, the cable outer semiconductive layer 140 and the cable shielding layer 150 are disposed outside the insulating layer 220 of the device direct connection terminal 10. A semiconductive tape 240 is wound around the outer side of the cable outer semiconductive layer 140 and the cable shielding layer 150 of the power cable 100 and the outer side of the outer semiconductive layer 230 of the device direct connection terminal 10. Further, an insulating tape 250 is wound around the outer side of the semiconductive tape 240.

  Here, the cable external semiconductive layer 140 and the cable shielding layer 150 of the power cable 100 and the external semiconductive layer 230 of the device direct connection terminal 10 are connected via the semiconductive tape 240, thereby the power cable 100. The cable outer semiconductive layer 140 and the cable shielding layer 150 are electrically connected to the outer semiconductive layer 230 of the device direct connection terminal 10. Since the cable external semiconductive layer 140 and the cable shielding layer 150 of the power cable 100 are grounded, the external semiconductive layer 230 covering the insulating layer 220 of the device direct connection terminal 10 is also grounded. Thereby, the apparatus direct connection terminal 10 is electrostatically shielded, and the leakage of the electric field applied to the insulating layer 220 to the outside is suppressed.

  Note that the side wall (560) of the electric device 50 is grounded. Hereinafter, the grounded side wall of the electric device 50 is referred to as a ground portion 560.

(Configuration near electrical equipment)
As shown in FIG. 1B, the external semiconductive layer 230 of the device direct connection terminal 10 is provided at a distance from the tip of the insulating layer 220 on the electric device 50 side. Further, the outer peripheral surface on the electric device 50 side of the external semiconductive layer 230 of the device direct connection terminal 10 forms the same surface as the outer peripheral surface at the tip of the insulating layer 220 on the electric device 50 side.

  Here, the insulating unit 300 is provided so as to cover the tip of the insulating layer 220 of the device direct connection terminal 10 on the electric device 50 side and the tip of the external semiconductive layer 230 of the device direct connection terminal 10 on the electric device 50 side. . For example, the axial length L of the bushing 500 of the insulating unit 300 is longer than the length d from the tip of the insulating layer 220 of the device direct connection terminal 10 to the tip of the external semiconductive layer 230.

  In FIG. 1B, an arrow represents an insulation distance (electrical distance) between the external semiconductive layer 230 connected to the cable shielding layer 150 of the power cable 100 and the ground portion (side wall) 560 of the electric device 50. ing. In the present embodiment, the distance from the tip of the external semiconductive layer 230 on the electric device 50 side to the grounding portion 560 of the electric device 50 via the opposite side of the electric device 50 of the insulating unit 300 is the insulating distance.

  As described above, the insulating portion 300 covers the tip of the insulating layer 220 on the electric device 50 side and the tip of the external semiconductive layer 230 of the device direct connection terminal 10 on the electric device 50 side. The insulation distance from the layer 230 to the grounding part 560 of the electric device 50 can be made longer (than the shortest distance between the external semiconductive layer 230 and the grounding part 560 of the electric device 50). Therefore, the dielectric strength between the external semiconductive layer 930 and the electric device 50 can be improved.

  The insulating unit 300 is provided separately from the insulating layer 220 of the device direct connection terminal 10 (provided separately from the insulating layer 220). Thereby, the insulation part 300 can be attached or detached from the apparatus direct connection terminal 10.

  The insulating unit 300 is made of, for example, the same insulating rubber as the insulating layer 220 of the device direct connection terminal 10, and is made of, for example, EP rubber or silicon rubber. Since the insulating portion 300 is made of elastic rubber, the tip of the insulating layer 220 of the device direct connection terminal 10 can be firmly tightened by the elastic force of the insulating portion 300, and the insulating portion 300 can be It can be easily detached from the direct connection terminal 10.

(Specific dimensions, etc.)
For example, the diameter of the power cable 100 is 10 mm or more and 100 mm or less, and the diameter of the cable conductor 110 is 3 mm or more and 60 mm or less. The nominal voltage of the power cable 100 is, for example, 3.3 kV or more and 77 kV or less. On the other hand, the diameter on the opening side of the fitting portion 222 of the bushing 500 of the electric device 50 is, for example, 10 mm or more and 150 mm or less.

  The inner diameter of the insulating unit 300 is, for example, 15 mm or more and 150 mm or less. The thickness of the insulating part 300 is, for example, 1 mm or more and 20 mm or less. The distance d from the tip of the insulating layer 220 on the electric device 50 side to the tip of the external semiconductive layer 230 is, for example, 1 mm or more and 30 mm or less, and the axial length L of the bushing 500 of the insulating unit 300 is, for example, It is 2 mm or more and 200 mm or less.

(2) Method for Connecting Device Directly Connected Terminal Next, a method for connecting the device directly connected terminal 10 according to the present embodiment will be described.

  The cable conductor 110, the cable insulation layer 130, the cable outer semiconductive layer 140, the cable shielding layer 150, and the cable sheath 160 of the power cable 100 are peeled off stepwise from the front end side of the power cable 100. Next, the compression terminal 280 is compressed and connected to the tip of the power cable 100.

  Next, the bushing 500 of the electric device 50 is fitted into the fitting portion 222 of the device direct connection terminal 10. At this time, the insulating part 300 provided separately from the insulating layer 220 is passed through the tip of the device direct connection terminal 10 on the electric device 50 side in advance, and the tip of the insulating layer 220 on the electric device 50 side and the external semiconductive layer 230. It arrange | positions so that the front-end | tip of the electric equipment side may be covered. Further, the cable insulation layer 130 of the power cable 100 is inserted into the insertion portion 224 of the device direct connection terminal 10.

  Next, in a state where the bushing 500 is fitted into the fitting portion 222 and the power cable 100 is inserted into the insertion portion 224, the bolt 290 is provided at the center of the bushing 500 through the through opening of the compression terminal 280. The bushing conductor 520 is fixed to the screw hole 522. Thereby, the bushing conductor 520 and the cable conductor 110 of the power cable 100 are connected inside the insulating layer 220. Next, the insulating plug 260 is fitted on the side opposite to the fitting portion 222 into which the bushing 500 of the device direct connection terminal 10 is fitted.

  Next, on the outside of the cable external semiconductive layer 140 and the cable shielding layer 150 of the power cable 100 exposed outside the insulating layer 220 of the device direct connection terminal 10 and on the outside of the external semiconductive layer 230 of the device direct connection terminal 10, A semiconductive tape 240 is wound. Thereby, the external semiconductive layer 230 of the apparatus direct connection terminal 10 and the cable shielding layer 150 of the power cable 100 are connected. Further, the insulating tape 250 is wound around the semiconductive tape 240.

  As described above, the bushing 500 of the electric device 50 and the power cable 100 are connected via the device direct connection terminal 10, and the device direct connection terminal 10 is assembled.

(3) Effects according to the present embodiment According to the present embodiment and its modifications, the following one or more effects are achieved.

(A) According to the present embodiment, the bushing 500 of the electric device 50 is fitted into the insulating layer 220 of the device direct connection terminal 10 and the power cable 100 is inserted. The outer semiconductive layer 230 is connected to the cable shielding layer 150 of the power cable 100 and is configured to cover the insulating layer 220. Further, the outer semiconductive layer 230 is provided at a distance from the tip of the insulating layer 220 on the electric device 50 side. The insulating unit 300 is configured to cover the tip of the insulating layer 220 on the electric device 50 side and the tip of the external semiconductive layer 230 on the electric device 50 side. Further, the insulating unit 300 is provided as a separate body from the insulating layer 220. Thereby, the withstand voltage between the external semiconductive layer 230 and the electric device 50 can be improved.

  Here, normally, the external semiconductive layer of the device direct connection terminal and the grounding portion (side wall) of the electric device are electrically connected. In the following cases, the external semiconductive layer of the device direct connection terminal and the electric semiconductive layer are electrically connected. It may be necessary to electrically insulate the equipment ground.

  For maintenance of the power cable 100, the external semiconductive layer of the device direct connection terminal and the grounding portion of the electric device may be electrically insulated. In order to confirm the soundness (insulation) of the sheath of the power cable, a test for measuring the insulation between the shielding layer of the power cable and the ground may be performed. At this time, a test voltage is applied between the external semiconductive layer of the device direct connection terminal and the grounding portion of the electric device. For this reason, it is necessary to electrically insulate the external semiconductive layer of the equipment direct connection terminal and the grounding portion of the electrical equipment.

  In addition, when both ends of the power cable are grounded, only the shielding layer at one end of the power cable may be installed in order to suppress the circulating current from flowing through the shielding layer of the power cable. At this time, when the shielding layer at the end of the power cable on the opposite side of the device direct connection terminal is grounded, a voltage of about 50 V or less is applied between the external semiconductive layer on the device direct connection terminal side that is not grounded and the grounding portion of the electric device. May occur. In addition, when a surge enters the power cable line, a surge voltage of several kV may be generated in the insulating portion. For this reason, it is necessary to electrically insulate the external semiconductive layer of the equipment direct connection terminal and the grounding portion of the electrical equipment.

  Therefore, in order to suppress dielectric breakdown between the external semiconductive layer of the device direct connection terminal and the grounding part of the electric device, for example, the external semiconductive layer of the device direct connection terminal is spaced from the tip of the insulating layer on the electric device side. It is conceivable to insulate the external semiconductive layer of the equipment direct connection terminal from the electrical equipment by providing a gap.

  Here, using FIG. 3, as a comparative example, the case where the external semiconductive layer of the device direct connection terminal is provided at a distance from the tip of the insulating layer on the electric device side, while there is no insulating portion 300 in the present embodiment will be described. To do. Fig.3 (a) is sectional drawing which shows the apparatus direct connection terminal which concerns on a comparative example, FIG.3 (b) is sectional drawing to which a part of (a) was expanded.

  As shown in FIG. 3A, the bushing conductor 520 of the bushing 500 and the cable conductor 110 of the power cable 100 are connected inside the insulating layer 920 in the device direct connection terminal 90 of the comparative example. On the other hand, an external semiconductive layer 930 is provided outside the insulating layer 920. The external semiconductive layer 930 is electrically connected to the cable shielding layer 150 of the power cable 100 and is provided so as to cover the insulating layer 920.

  As shown in FIG. 3B, the external semiconductive layer 930 is provided with a space from the tip of the insulating layer 920 on the electric device 50 side. Thereby, it can suppress that insulation breaks between the external semiconductive layer 930 and the electric equipment 50.

  However, in the configuration of the comparative example, since the tip of the insulating layer 920 on the electric device 50 side is exposed from the external semiconductive layer 930, the surface of the insulating layer 920 may be contaminated. For this reason, the dielectric strength between the external semiconductive layer 930 and the electric apparatus 50 may fall.

  On the other hand, according to the present embodiment, as shown in FIG. 1B, the insulating unit 300 includes the tip of the insulating layer 220 on the electric device 50 side and the electric device 50 of the external semiconductive layer 230. And a tip on the side. Thereby, it can suppress that the surface of the insulating layer 220 is contaminated.

  Further, as shown in FIG. 1B, the insulating part 300 covers the tip of the insulating layer 220 on the electric device 50 side and the tip of the external semiconductive layer 230 on the electric device 50 side, The insulation distance from the external semiconductive layer 230 to the electric device 50 can be increased. Therefore, even when the surface of the insulating part 300 is contaminated, the insulation performance between the external semiconductive layer 930 and the electric device 50 can be sufficiently maintained.

  The insulating unit 300 is provided separately from the insulating layer 220 of the device direct connection terminal 10. Thereby, the insulation part 300 can be attached or detached from the apparatus direct connection terminal 10. When the surface of the insulating unit 300 is contaminated, the insulating unit 300 can be removed and cleaned, or the contaminated insulating unit 300 can be replaced with a clean insulating unit 300.

  As described above, according to the present embodiment, it is possible to provide the device direct connection terminal 10 that can maintain the insulation performance between the external semiconductive layer 230 and the electric device 50.

(B) According to the present embodiment, the insulating unit 300 can be detached from the device direct connection terminal 10. For example, depending on the configuration of the electric device, it may be desirable that the outer side of the electric device is grounded, and the outer side of the electric device and the external semiconductive layer of the device direct connection terminal are electrically connected. In such a case, by replacing the insulating portion 300 of the device direct connection terminal 10 with a semiconductive portion made of conductive rubber, the outside of the electric device 50, the external semiconductive layer 230 of the device direct connection terminal 10, and the semiconductive It can be electrically connected through the section.

(C) According to this embodiment, the insulating part 300 is comprised from the insulating rubber | gum which has a stretching property. Thereby, the front-end | tip of the insulating layer 220 of the apparatus direct connection terminal 10 can be firmly clamped with the elastic force of the insulation part 300, and the insulation part 300 can be easily attached or detached from the apparatus direct connection terminal 10.

<Second Embodiment of the Present Invention>
A second embodiment of the present invention will be described with reference to FIG. Fig.2 (a) is sectional drawing which shows the apparatus direct connection terminal based on 2nd Embodiment of this invention, FIG.2 (b) is sectional drawing to which a part of (a) was expanded.

  This embodiment is different from the first embodiment in the shape of the insulating portion. Hereinafter, only elements different from those of the first embodiment will be described, and elements substantially the same as those described in the first embodiment are denoted by the same reference numerals and description thereof will be omitted.

(1) Structure of Device Directly Connected Terminal As shown in FIG. 2B, the tip of the insulating layer 220 of the device directly connected terminal 10 on the electric device 50 side and the electricity of the external semiconductive layer 230 of the device directly connected terminal 10 An insulating portion 302 is provided so as to cover the tip on the device 50 side. The insulating portion 302 has a convex portion 320 that protrudes in a direction perpendicular to the direction in which the bushing 500 is fitted to the insulating layer 220.

  The convex portion 320 is provided so as to surround the tip of the insulating layer 220 on the electric device 50 side in the circumferential direction. For example, two protrusions 320 are provided in a direction in which the bushing 500 is fitted into the insulating layer 220.

  The height h of the convex part 320 is, for example, not less than 1 mm and not more than 50 mm. Further, the width W of the protrusion 320 in the direction of fitting into the insulating layer 220 of the bushing 500 is, for example, 1 mm or more and 20 mm or less.

(2) Effects according to the present embodiment According to the present embodiment and its modifications, the following one or more effects are achieved.

(A) According to this embodiment, the insulating part 302 has the convex part 320 that protrudes in a direction perpendicular to the direction in which the bushing 500 fits into the insulating layer 220.

  Here, in FIG. 2B, an arrow represents an insulation distance between the external semiconductive layer 230 connected to the cable shielding layer 150 of the power cable 100 and the grounding portion (side wall) 560 of the electric device 50. . In the present embodiment, from the tip of the external semiconductive layer 230 on the electric device 50 side, via the opposite side of the insulating portion 302 from the electric device 50 and the surface of the convex portion 320 of the insulating portion 302, The distance to the grounding part 560 is the insulation distance.

  As described above, since the insulating portion 302 includes the convex portion 320, the electrical distance (insulating distance) from the external semiconductive layer 230 to the electric device 50 can be further increased. Therefore, the insulation performance between the external semiconductive layer 230 and the electric device 50 can be further improved.

(B) According to this embodiment, since the insulating part 302 is provided separately from the insulating layer 220 of the device direct connection terminal 10, the insulating part 302 is manufactured even if the insulating part 302 has the convex part 320. Is easy.

  Here, as a comparative example, consider a case where an insulating portion that covers the electrical device side tip of the insulating layer and the electrical device side tip of the external semiconductive layer is provided integrally with the insulating layer. In the comparative example, there is a possibility that the mold must be finely divided in order to form a portion corresponding to the convex portion of the insulating portion. Therefore, in the configuration according to the comparative example, it may be difficult to manufacture a device direct connection terminal having a convex portion.

  On the other hand, according to this embodiment, the insulating part 302 having the convex part 320 is manufactured separately from the insulating layer 220. Therefore, even if the insulating part 302 has the convex part 320, the insulating part 302 can be molded with a mold having a simple structure, and the insulating part 302 can be easily manufactured.

<Other Embodiments of the Present Invention>
As mentioned above, although embodiment and modification of this invention were described concretely, this invention is not limited to the above-mentioned embodiment and modification, and can be variously changed in the range which does not deviate from the summary.

  In the above-described embodiment, the case where the device direct connection terminal 10 is T-shaped has been described, but the device direct connection terminal may be I-shaped or L-shaped.

  In the above-described embodiment, the case where the tip of the insulating unit 300 forms the same surface as the tip of the insulating layer 220 has been described. However, the tip of the insulating unit and the tip of the insulating layer are shifted from each other. May be.

  In the second embodiment described above, the case where the insulating portion 302 has the convex portion 320 has been described. However, the insulating portion may have a concave portion. In this case, you may think that a recessed part is formed in an insulating part by providing two convex parts in an insulating part.

  Moreover, in the above-mentioned embodiment, before the process of connecting the external semiconductive layer 230 of the apparatus direct connection terminal 10 and the cable shielding layer 150 of the power cable 100 by the semiconductive tape 240, the insulating unit 300 is The case where the step of arranging the insulating layer 220 so as to cover the tip on the electric device 50 side of the insulating layer 220 and the tip of the external semiconductive layer 230 on the electric device 50 side has been described. It may be done at the timing. For example, after passing an insulating part in the vicinity of the base of the bushing in advance and fitting the bushing to the fitting part, the insulating part is connected to the tip of the insulating layer on the electric device 50 side and the tip of the external semiconductive layer on the electric device side. And may be arranged so as to cover.

10 device direct connection terminal 100 power cable 110 cable conductor 130 cable insulating layer 140 cable outer semiconductive layer 150 cable shielding layer 160 cable sheath 210 inner semiconductive layer 220 insulating layer 222 fitting portion 224 insertion portion 230 outer semiconductive layer 240 semiconductive Insulating tape 260 insulating tape 260 insulating plug 280 compression terminal 290 bolt 300, 302 insulating portion 320 convex portion 500 bushing 520 bushing conductor 522 screw hole 540 bushing insulating layer

Claims (5)

An insulating layer in which a bushing of an electrical device is fitted and a power cable is inserted, and a conductor provided in the center of the bushing and a cable conductor provided in the center of the power cable are connected inside,
It is connected to a conductive cable shielding layer provided outside the cable conductor of the power cable, is provided so as to cover the insulating layer, and is provided at a distance from the tip of the insulating layer on the electric equipment side. An external semiconductive layer;
An insulating portion that covers a tip of the insulating layer on the electrical device side and a tip of the external semiconductive layer on the electrical device side;
Have
The apparatus direct connection terminal, wherein the insulating part is provided separately from the insulating layer. 2. The device direct connection terminal according to claim 1, wherein the insulating portion has a convex portion that protrudes in a direction perpendicular to a direction in which the bushing is fitted to the insulating layer. The device direct connection terminal according to claim 2, wherein the convex portion is provided so as to surround a tip of the insulating layer on the electric device side in a circumferential direction. The device direct connection terminal according to any one of claims 1 to 3, wherein the insulating portion is made of insulating rubber. A bushing of an electric device is fitted into an insulating layer of a device direct connection terminal, a power cable is inserted, a conductor provided at the center of the bushing, and a cable conductor provided at the center of the power cable, the insulating layer A process of connecting inside,
An external semiconductive layer provided so as to cover the insulating layer of the device direct connection terminal and spaced from the tip of the insulating layer on the electric device side, and provided outside the cable conductor of the power cable. Connecting a conductive cable shielding layer;
A step of disposing an insulating portion provided separately from the insulating layer so as to cover a tip of the insulating layer on the electric device side and a tip of the external semiconductive layer on the electric device side;
A method of assembling a device direct connection terminal characterized by comprising:

Images