JP2015088675A - Method for controlling wavelength variable laser - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for controlling a wavelength variable laser, by which power consumption can be suppressed.SOLUTION: The method for controlling a wavelength variable laser includes a temperature of an optical waveguide as a driving condition, and the method includes: a first step of acquiring, from a memory, a first driving condition of the wavelength variable laser for laser oscillation at a first wavelength; a second step of calculating a second driving condition for driving the wavelength variable laser at a second wavelength different from the first wavelength, by referring the wavelength difference between the first wavelength and the second wavelength; and a third step of driving the wavelength variable laser based on the second driving condition obtained in the second step. In the second step, the second driving condition is calculated under such a condition that the temperature of the optical waveguide is always higher than the temperature of the optical waveguide presented under the first driving condition.

Description

  The present invention relates to a method for controlling a wavelength tunable laser.

  A tunable laser capable of selecting an output wavelength is disclosed (for example, see Patent Document 1).

JP 2009-026996 A

  In the technique of Patent Document 1, driving conditions for obtaining a preset grid wavelength are stored in a memory, and control is performed to oscillate at any of the grid wavelengths based on the stored driving conditions. In a wavelength tunable laser in which the oscillation wavelength periodically changes in a certain temperature range, if the oscillation wavelength is controlled outside the temperature range, power consumption required for temperature control may increase.

  Accordingly, it is an object to provide a method for controlling a wavelength tunable laser capable of suppressing power consumption.

The invention of this application 1
(1) A method of controlling a wavelength tunable laser including the temperature of an optical waveguide as a driving condition, wherein a first step of acquiring a first driving condition of the wavelength tunable laser for laser oscillation at a first wavelength from a memory; Referring to the first driving condition and a wavelength difference between the first wavelength and a second wavelength different from the first wavelength, a second driving for driving the wavelength tunable laser at the second wavelength A second step of calculating a condition; and a third step of driving the wavelength tunable laser based on the second driving condition obtained by the second step. In the second step, the optical waveguide This is a tunable laser control method in which the second drive condition is calculated under the condition that the temperature is always higher than the temperature of the optical waveguide indicated by the first drive condition.

  According to the said invention, power consumption can be suppressed.

1 is a block diagram illustrating an overall configuration of a wavelength tunable laser according to Example 1. FIG. It is typical sectional drawing which shows the whole structure of the semiconductor laser in a present Example. It is a figure which shows an initial setting value and a feedback control target value. It is a figure showing the relationship between the temperature of a heater, and the oscillation wavelength of a semiconductor laser. It is a figure showing the relationship between the temperature of a heater, and the oscillation wavelength of a semiconductor laser. It is a figure showing the relationship between the request | required wavelength and fundamental wavelength in gridless control. It is a figure which shows the principle of gridless control. It is a figure explaining the effect of an Example. It is a flowchart for demonstrating the starting procedure of a wavelength variable laser. Another example of a laser device is disclosed.

[Description of Embodiment of Present Invention]
First, the contents of the embodiments of the present invention will be listed and described.

The present invention is (1) a method of controlling a wavelength tunable laser including the temperature of an optical waveguide as a driving condition, and obtains a first driving condition of the tunable laser for causing laser oscillation at a first wavelength from a memory. To drive the wavelength tunable laser at the second wavelength with reference to the first step, the first driving condition, and the wavelength difference between the first wavelength and a second wavelength different from the first wavelength. A second step of calculating the second drive condition, and a third step of driving the wavelength tunable laser based on the second drive condition obtained by the second step. In the second step, The wavelength tunable laser control method calculates the second driving condition under a condition that the temperature of the optical waveguide is always higher than the temperature of the optical waveguide indicated in the first driving condition. According to this configuration, power consumption can be suppressed.
(2) The temperature of the wavelength tunable laser may be controlled by a temperature control device including a Peltier element. According to this configuration, power consumption of the Peltier element can be suppressed.
(3) The wavelength tunable laser may be an array type laser including a plurality of DFB lasers.
(4) The wavelength tunable laser may include an SG-DFB.

[Details of the embodiment of the present invention]
A specific example of a wavelength tunable laser according to an embodiment of the present invention will be described below with reference to the drawings. In addition, this invention is not limited to these illustrations, is shown by the claim, and intends that all the changes within the meaning and range equivalent to a claim are included.

  FIG. 1 is a block diagram illustrating an overall configuration of a wavelength tunable laser 100 according to the first embodiment. As shown in FIG. 1, the wavelength tunable laser 100 includes a semiconductor laser 30 (tunable semiconductor laser) capable of controlling the wavelength as a laser device. The semiconductor laser 30 of the present embodiment is provided with a region that is connected to the laser region and becomes an SOA (Semiconductor Optical Amplifier). This SOA functions as a light output control unit. The SOA can arbitrarily increase or decrease the intensity of light output. It is also possible to control the light output intensity to be substantially zero. Further, the wavelength tunable laser 100 includes a detection unit 50, a memory 60, a controller 70, and the like. The detection unit 50 functions as an output detection unit and a wavelength locker unit. The controller 70 controls the wavelength tunable laser 100, and includes a RAM (Random Access Memory).

  FIG. 2 is a schematic cross-sectional view showing the overall configuration of the semiconductor laser 30 in the present embodiment. As shown in FIG. 2, the semiconductor laser 30 includes an SG-DFB (Sampled Grafted Distributed Feedback) region A, a CSG-DBR (Chipped Sampled Distilled Reflector) region, an Critical Braided Reflector (SOC) region, an Oc, and an Sr region. Prepare. That is, the semiconductor laser 30 is a laser having a wavelength selection mirror in the semiconductor structure.

  As an example, in the semiconductor laser 30, the SOA region C, the SG-DFB region A, and the CSG-DBR region B are arranged in this order from the front side to the rear side. The SG-DFB region A has a gain and includes a sampled grating. The CSG-DBR region B has a sampled grating without gain. SG-DFB region A and CSG-DBR region B correspond to the laser region in FIG. 1, and SOA region C corresponds to the SOA region in FIG.

  The SG-DFB region A has a structure in which a lower cladding layer 2, an active layer 3, an upper cladding layer 6, a contact layer 7, and an electrode 8 are stacked on a substrate 1. The CSG-DBR region B has a structure in which a lower cladding layer 2, an optical waveguide layer 4, an upper cladding layer 6, an insulating film 9, and a plurality of heaters 10 are stacked on a substrate 1. Each heater 10 is provided with a power supply electrode 11 and a ground electrode 12. The SOA region C has a structure in which a lower cladding layer 2, an optical amplification layer 19, an upper cladding layer 6, a contact layer 20, and an electrode 21 are stacked on a substrate 1.

  In the SG-DFB region A, CSG-DBR region B, and SOA region C, the substrate 1, the lower cladding layer 2, and the upper cladding layer 6 are integrally formed. The active layer 3, the optical waveguide layer 4, and the optical amplification layer 19 are formed on the same surface. The boundary between the SG-DFB region A and the CSG-DBR region B corresponds to the boundary between the active layer 3 and the optical waveguide layer 4.

  An end face film 16 is formed on end faces of the substrate 1, the lower clad layer 2, the optical amplifying layer 19, and the upper clad layer 6 on the SOA region C side. In this embodiment, the end face film 16 is an AR (Anti Reflection) film. The end face film 16 functions as a front side end face of the semiconductor laser 30. An end face film 17 is formed on end faces of the substrate 1, the lower clad layer 2, the optical waveguide layer 4, and the upper clad layer 6 on the CSG-DBR region B side. In this embodiment, the end face film 17 is an AR film. The end face film 17 functions as a rear side end face of the semiconductor laser 30.

  The substrate 1 is a crystal substrate made of n-type InP, for example. The lower cladding layer 2 is n-type, and the upper cladding layer 6 is p-type, and each is made of, for example, InP. The lower cladding layer 2 and the upper cladding layer 6 confine the active layer 3, the optical waveguide layer 4, and the optical amplification layer 19 in the upper and lower directions.

The active layer 3 is composed of a semiconductor having a gain. The active layer 3 has, for example, a quantum well structure, for example, a well layer made of Ga _0.32 In _0.68 As _0.92 P _0.08 (thickness 5 nm), Ga _0.22 In _0. It has a structure in which barrier layers made of ₇₈ As _0.47 P _0.53 (thickness 10 nm) are alternately stacked. The optical waveguide layer 4 can be composed of, for example, a bulk semiconductor layer, and can be composed of, for example, Ga _0.22 In _0.78 As _0.47 P _0.53 . In this embodiment, the optical waveguide layer 4 has a larger energy gap than the active layer 3.

The optical amplification layer 19 is a region to which gain is given by current injection from the electrode 21, thereby performing optical amplification. The optical amplifying layer 19 can be configured by, for example, a quantum well structure. For example, a well layer of Ga _0.35 In _0.65 As _0.99 P _0.01 (thickness 5 nm) and a Ga _0.15 In _0. A structure in which barrier layers of ₈₅ As _0.32 P _0.68 (thickness 10 nm) are alternately stacked can be employed. Further, as another structure, for example, a bulk semiconductor made of Ga _0.44 In _0.56 As _0.95 P _0.05 can be adopted. Note that the optical amplification layer 19 and the active layer 3 can be made of the same material.

The contact layers 7 and 20 can be composed of, for example, p-type Ga _0.47 In _0.53 As crystal. The insulating film 9 is a protective film made of a silicon nitride film (SiN) or a silicon oxide film (SiO). The heater 10 is a thin film resistor made of titanium tungsten (TiW). Each of the heaters 10 may be formed across a plurality of segments of the CSG-DBR region B.

  The electrodes 8, 21, the power supply electrode 11, and the ground electrode 12 are made of a conductive material such as gold (Au). A back electrode 15 is formed at the bottom of the substrate 1. The back electrode 15 is formed across the SG-DFB region A, the CSG-DBR region B, and the SOA region C.

The end face film 16 and the end face film 17 are AR films having a reflectance of 1.0% or less, and have characteristics that their end faces are substantially non-reflective. The AR film can be composed of a dielectric film made of, for example, MgF ₂ and TiON. In this embodiment, both ends of the laser are AR films, but the end face film 17 may be formed of a reflective film having a significant reflectance. In the case where a structure having a light absorption layer is provided in the semiconductor in contact with the end face film 17 in FIG. 2, the light output leaking to the outside from the end face film 17 is suppressed by giving the end face film 17 a significant reflectance. Can do. A significant reflectance is, for example, a reflectance of 10% or more. Here, the reflectance refers to the reflectance with respect to the inside of the semiconductor laser.

The diffraction grating (corrugation) 18 is formed at a plurality of positions with a predetermined interval in the lower cladding layer 2 of the SG-DFB region A and the CSG-DBR region B. Thereby, sampled gratings are formed in the SG-DFB region A and the CSG-DBR region B. In the SG-DFB region A and the CSG-DBR region B, the lower cladding layer 2 is provided with a plurality of segments. Here, the segment refers to a region in which a diffraction grating portion where the diffraction grating 18 is provided and a space portion where the diffraction grating 18 is not provided are continuous one by one. That is, a segment refers to a region where a space part sandwiched between both ends by a diffraction grating part and the diffraction grating part are connected. The diffraction grating 18 is made of a material having a refractive index different from that of the lower cladding layer 2. When the lower cladding layer 2 is InP, for example, Ga _0.22 In _0.78 As _0.47 P _0.53 can be used as a material constituting the diffraction grating.

  The diffraction grating 18 can be formed by patterning using a two-beam interference exposure method. The space portion located between the diffraction gratings 18 can be realized by exposing the pattern of the diffraction grating 18 to the resist and then exposing the position corresponding to the space portion again. The pitch of the diffraction grating 18 in the SG-DFB region A and the pitch of the diffraction grating 18 in the CSG-DBR region B may be the same or different. In this embodiment, as an example, both pitches are set to be the same. Moreover, in each segment, the diffraction grating 18 may have the same length or may have a different length. Further, each diffraction grating 18 in the SG-DFB region A has the same length, each diffraction grating 18 in the CSG-DBR region B has the same length, and the SG-DFB region A and the CSG-DBR region B The length of the diffraction grating 18 may be different.

  In the SG-DFB region A, the optical length of each segment is substantially the same. In the CSG-DBR region B, the optical lengths of at least two segments are different from each other. Thereby, the intensity | strength of the peak of the wavelength characteristic of CSG-DBR area | region B comes to have wavelength dependence. The average optical length of the segment in the SG-DFB region A and the average optical length of the segment in the CSG-DBR region B are different. Thus, the segment in the SG-DFB region A and the segment in the CSG-DBR region B constitute a resonator in the semiconductor laser 30.

  In each of the SG-DFB region A and the CSG-DBR region B, the reflected lights interfere with each other. The active layer 3 is provided in the SG-DFB region A. When carriers are injected, a discrete gain spectrum having a predetermined wavelength interval with substantially uniform peak intensity is generated. In the CSG-DBR region B, a discrete reflection spectrum having a predetermined wavelength interval with a different peak intensity is generated. The intervals between the peak wavelengths of the wavelength characteristics in the SG-DFB region A and the CSG-DBR region B are different. A wavelength satisfying the oscillation condition can be selected using the vernier effect generated by the combination of these wavelength characteristics.

  As shown in FIG. 1, the semiconductor laser 30 is disposed on the first temperature control device 31. The first temperature control device 31 includes a Peltier element and functions as a TEC (Thermoelectric cooler). The first thermistor 32 is disposed on the first temperature control device 31. The first thermistor 32 detects the temperature of the first temperature control device 31. Based on the detected temperature of the first thermistor 32, the temperature of the semiconductor laser 30 can be specified.

  In the wavelength tunable laser 100, the detection unit 50 is disposed on the front side of the semiconductor laser 30. Since the detection unit 50 functions as a wavelength locker unit, the wavelength tunable laser 100 can be called a front rocker type. The detection unit 50 includes a first light receiving element 42, a beam splitter 51, an etalon 52, a second temperature control device 53, a second light receiving element 54, and a second thermistor 55.

  The beam splitter 41 is disposed at a position where output light from the front side of the semiconductor laser 30 is branched. The beam splitter 51 is disposed at a position where the light from the beam splitter 41 is branched. The first light receiving element 42 is disposed at a position for receiving one of the two lights branched by the beam splitter 51. The etalon 52 is disposed at a position where the other of the two lights branched by the beam splitter 51 is transmitted. The second light receiving element 54 is disposed at a position for receiving the transmitted light that has passed through the etalon 52.

  The etalon 52 has a characteristic that transmittance changes periodically according to the wavelength of incident light. In this embodiment, a solid etalon is used as the etalon 52. Note that the periodic wavelength characteristics of the solid etalon change as the temperature changes. The etalon 52 is disposed at a position that transmits the other of the two lights branched by the beam splitter 51. The etalon 52 is disposed on the second temperature control device 53. The second temperature control device 53 includes a Peltier element and functions as a TEC (Thermoelectric cooler).

  The second light receiving element 54 is disposed at a position for receiving the transmitted light that has passed through the etalon 52. The second thermistor 55 is provided to specify the temperature of the etalon 52. The second thermistor 55 is disposed on the second temperature control device 53, for example. In this embodiment, the temperature of the etalon 52 is specified by detecting the temperature of the second temperature control device 53 with the second thermistor 55.

  The memory 60 is a rewritable storage device. A typical rewritable storage device is a flash memory. The controller 70 includes a central processing unit (CPU), a RAM (Random Access Memory), a power source, and the like. The RAM is a memory that temporarily stores programs executed by the central processing unit, data processed by the central processing unit, and the like.

  The memory 60 stores initial setting values and feedback control target values for each part of the wavelength tunable laser 100 in association with the channels. The channel is a number corresponding to the oscillation wavelength of the semiconductor laser 30. For example, each channel corresponds to the grid wavelength of ITU-T (International Telecommunication Union Telecommunication Standardization Sector). In this embodiment, the wavelength of each channel is defined as the fundamental wavelength.

FIG. 3 is a diagram showing the initial set value and the feedback control target value. In the following description, the initial set value and the feedback control target value are also referred to as drive conditions. As shown in FIG. 3, the initial set values are the initial current value I _LD supplied to the electrode 8 in the SG-DFB region A, the initial current value I _SOA supplied to the electrode 21 in the SOA region C, and the semiconductor laser 30. Initial temperature value T _LD , etalon 52 initial temperature value T _Etalon , and initial power values P _{Heater 1 to} P _{Heater 3} supplied to each heater 10. These initial setting values are determined for each channel. The feedback control target value is a target value when the controller 70 performs feedback control. The feedback control target value is the ratio of the target value I _{m1 of} the photocurrent output from the first light receiving element 42 and the photocurrent I _m2 output from the second light receiving element 54 to the photocurrent I _m1 output from the first light receiving element 42. Target value I _m2 / I _m1 . The control target value is also determined for each channel. The memory 60 stores a temperature correction coefficient C1. Details of the temperature correction coefficient C1 will be described later. In the present embodiment, the temperature correction coefficient C1 is a value common to each channel. Each of these values is acquired for each individual by tuning using a wavelength meter before the wavelength tunable laser 100 is shipped.

  FIG. 4A is a diagram showing the relationship between the temperature of the heater 10 and the oscillation wavelength λ of the semiconductor laser 30. In FIG. 4A, it is assumed that the temperature of the semiconductor laser 30 is maintained constant by the first temperature control device 31. The horizontal axis indicates the average temperature of the heater 10, and the vertical axis indicates the oscillation wavelength of the semiconductor laser 30. The semiconductor laser 30 oscillates laser light at a wavelength at which two reflection peaks of the gain spectrum of the SG-DFB region A and the reflection spectrum of the CSG-DBR region B overlap. Therefore, the oscillation wavelength of the semiconductor laser 30 is distributed at a predetermined wavelength interval. That is, the semiconductor laser 30 has a jumping wavelength characteristic.

  In order to select the fundamental wavelength λ2, which is one of the fundamental wavelengths, the average temperature of the heater 10 is set to a range R, and the temperature of the first temperature control device 31 is set to a predetermined temperature, thereby changing the wavelength. A small, substantially flat portion (hereinafter referred to as a terrace portion) is selected. By controlling the temperature of the first temperature control device 31 on this terrace, the fundamental wavelength λ2 can be selected at the center T of the terrace.

  As shown in FIG. 4B, in this state, the oscillation wavelength is changed by changing the temperature of the first temperature control device 31 in the range from T (Low) to T (High) (> T (Low)). It can be selected from fundamental wavelengths λ0 to λ4. When a wavelength other than the fundamental wavelengths λ0 to λ4 is selected, the temperature of the heater 10 can be raised or lowered, and the temperature of the first temperature control device 31 can be changed in the range from T (Low) to T (High). That's fine. In the example of FIG. 4B, the temperature of the heater 10 is raised, and the temperature of the first temperature control device 31 is changed in the range from T (Low) to T (High), thereby oscillating from the fundamental wavelengths λ5 to λ9. The wavelength can be selected.

  As described above, in the wavelength tunable laser 100, a plurality of drive conditions corresponding to the fundamental wavelength of the semiconductor laser 30 are set so that the fundamental wavelength has a predetermined wavelength interval, and the fundamental wavelength is the first temperature control device. It is periodically arranged in a predetermined temperature range of 31. By controlling the temperature of the heater 10 and the temperature of the first temperature control device 31 in combination, oscillation at each fundamental wavelength can be realized. In this embodiment, five fundamental wavelengths are set in the range from T (Low) to T (High), but this number is not particularly limited.

  By the way, the wavelength tunable laser 100 according to the present embodiment can output the required wavelength even if the required wavelength does not match the fundamental wavelength. The control that enables output at a wavelength different from the fundamental wavelength is hereinafter referred to as gridless control. FIG. 5 is a diagram illustrating the relationship between the required wavelength and the fundamental wavelength in gridless control. As shown in FIG. 5, in gridless control, the required wavelength is a wavelength between the fundamental wavelength and another adjacent fundamental wavelength. Note that the required wavelength may coincide with the fundamental wavelength.

FIG. 6 is a diagram illustrating the principle of gridless control. In FIG. 6, the horizontal axis indicates the wavelength, and the vertical axis indicates the normalized value of the ratio I _m2 / I _m1 (transmittance of the etalon 52). 6, the solid line is a wavelength characteristic corresponding to the initial temperature value _{T Etalon} of the etalon 52. A dotted line is a wavelength characteristic when the temperature of the etalon 52 is raised by the second temperature control device 53. Here, when the ratio I _m2 / I _m1 in the black circle on the solid line is adopted as the feedback target value, if the etalon 52 has the initial temperature value T _Etalon , oscillation will _occur at the fundamental wavelength. On the other hand, if the etalon 52 has a temperature corresponding to the wavelength characteristic indicated by the dotted line, even if the ratio I _m2 / I _m1 is a value for obtaining the fundamental wavelength (black circle on the dotted line), the actual oscillation wavelength is etalon. It shifts from its fundamental wavelength by the change in characteristics. That is, by shifting the etalon characteristic by the wavelength difference between the required wavelength and the fundamental wavelength, the required wavelength can be realized without _{changing the} feedback target value ratio I _m2 / I _m1 . That is, the required wavelength can be realized by performing an operation for changing the etalon temperature based on the wavelength difference ΔF between the required wavelength and the fundamental wavelength and applying this as the etalon temperature. Note that the FSR (free spectrum region) of the etalon 52 of the present embodiment is configured, for example, at intervals of 50 GHz.

  As described above, the wavelength characteristics of the etalon 52 shift according to the temperature. The frequency variation / temperature variation [GHz / ° C.] in the etalon 52 is referred to as a temperature correction coefficient C1 of the etalon 52. Here, the wavelength is expressed by frequency. The temperature correction coefficient C1 corresponds to the rate of change with respect to the wavelength change of the driving condition of the wavelength tunable laser.

The set temperature of the etalon 52 for realizing control of the required wavelength is Tetln_A [° C.]. The initial temperature of the etalon 52, that is, the temperature of the etalon 52 corresponding to the selected fundamental wavelength is defined as Tetln_B [° C.]. Tetln_B corresponds to T _Etalon and is acquired from the memory 60. Further, the wavelength difference (absolute value) between the fundamental wavelength and the required wavelength is ΔF [GHz]. In this case, the relationship between the parameters can be expressed as the following formula (1). The set temperature Tetln_A necessary for obtaining the required wavelength can be obtained based on the equation (1).
Tetln_A = Tetln_B + ΔF / C1 (1)
By controlling the temperature of the second temperature control device 53 to the set temperature Tetln_A, the required wavelength can be obtained using the ratio I _m2 / I _m1 as it is.

By performing the above operation, as shown in FIG. 6, the semiconductor laser 30 can be made to oscillate at a wavelength (required wavelength) shifted from the fundamental wavelength by the amount that the characteristics of the etalon 52 are shifted. As described above, the ratio I _m2 / I _m1 can be used as it is, but the oscillation wavelength of the semiconductor laser 30 is continuously changed by the temperature control of the first temperature controller 31 and each heater 10. become.

  In order to perform the gridless control, the temperature of the heater 10 and the temperature of the first temperature control device 31 may be controlled in combination as described with reference to FIG. For example, by setting the average temperature of the heater 10 to a predetermined temperature and controlling the temperature of the first temperature control device 31 in a range from T (Low) to T (High), in the range from the fundamental wavelength λ0 to the fundamental wavelength λ4, Any wavelength can be selected without being limited to the fundamental wavelength. Further, by raising the average temperature of the heater 10 as compared with the case where the fundamental wavelengths λ0 to λ4 are realized, an arbitrary wavelength can be selected in the range of the fundamental wavelengths λ5 to λ9.

  Here, a case where the oscillation wavelength is changed to a wavelength between the fundamental wavelength λ4 and the fundamental wavelength λ5 will be considered. That is, the case where the wavelength is controlled outside the temperature range of the first temperature control device 31 for realizing the periodicity of the fundamental wavelength will be considered. In this case, the control for increasing the temperature of the first temperature control device 31 further than T (High) from the driving condition of the fundamental wavelength λ4 and the temperature of the first temperature control device 31 from the driving condition of the fundamental wavelength λ5 are T (Low) It is conceivable that the control is further reduced. Since the first temperature control device 31 performs temperature control using a Peltier element, power consumption increases when the temperature is lowered.

  Therefore, in this embodiment, when the wavelength is controlled outside the temperature range of the first temperature control device 31 for realizing the periodicity of the fundamental wavelength, the oscillation wavelength is set from the fundamental wavelength to an arbitrary wavelength. The temperature of the first temperature control device 31 is controlled in one direction from a low temperature to a high temperature. Specifically, when the oscillation wavelength is changed to a wavelength between the fundamental wavelength λ4 and the fundamental wavelength λ5, the fundamental wavelength λ4 (first fundamental wavelength) and the adjacent fundamental wavelength λ5 (second fundamental wavelength) When setting the oscillation wavelength to an arbitrary wavelength between, the oscillation wavelength is continuously changed from the fundamental wavelength with the lower temperature of the first temperature control device 31.

  The effect in this case will be described. As shown in FIG. 7, when the oscillation wavelength is controlled to a wavelength between the fundamental wavelength λ3 and the fundamental wavelength λ4, the temperature of the first temperature control device 31 is changed from the temperature at which the first temperature control device 31 realizes the fundamental wavelength λ3. Increase temperature. Further, when the oscillation wavelength is controlled to a wavelength between the fundamental wavelength λ4 and the fundamental wavelength λ5, the first temperature control device starts from the temperature (T (High)) at which the first temperature control device 31 realizes the fundamental wavelength λ4. Increase the temperature of 31. In this case, when the temperature of the first temperature control device 31 is controlled outside the range of T (Low) and T (High), the first temperature control device 31 is controlled to a temperature higher than the range. Thereby, the power consumption at the time of controlling the temperature of the 1st temperature control apparatus 31 out of the range of T (Low)-T (High) can be suppressed.

  In the present embodiment, the case where the temperature of the first temperature control device 31 is outside the range of T (Low) to T (High) is described, but the temperature of the first temperature control device 31 is set to T (Low). The power consumption can be suppressed even when the control is performed within the range of ~ T (High). However, the effect of suppressing power consumption is greater when the temperature of the first temperature control device 31 is outside the range of T (Low) to T (High).

  FIG. 8 is a flowchart for explaining the startup procedure of the wavelength tunable laser 100. As shown in FIG. 8, the controller 70 receives a wavelength request (step S1). This required wavelength is due to an input from an external input / output device (not shown). Typically, an input / output device corresponding to the RS232C standard is employed. Next, as an example, the controller 70 selects a fundamental wavelength having a low temperature of the first temperature control device 31 from the fundamental wavelengths sandwiching the required wavelength (step S2).

  Next, the controller 70 calculates a wavelength difference ΔF between the fundamental wavelength and the required wavelength (step S3). Next, the controller 70 calculates the updated set temperature of the etalon 52 (step S4). Next, the controller 70 calculates the update setting value of the semiconductor laser 30 (step S5). In this case, the update setting value is calculated so as to increase the temperature of the first temperature control device 31 from the fundamental wavelength at which the temperature of the first temperature control device 31 is low.

  Next, the controller 70 writes the updated set temperature and the updated set value calculated in steps S4 and S5 in its own RAM (step S6). Next, the controller 70 drives the semiconductor laser 30 using the updated set temperature and the updated set value written in the RAM (step S7). Note that the SOA region C is controlled so that light is not output from the semiconductor laser 30 at this time.

Next, the controller 70, so that the detection temperature TH1 of the first thermistor 32 is within the range of _{T LD,} performs ATC (Automatic Temperature Control) control. Further, it is determined whether the detected temperature TH1 of the first thermistor 32 is within the range of _{T LD} (Step S8). Here, the range of T _LD is a predetermined range centered on the temperature value T _LD of the update set value. If it is determined as "No" in step S8, the controller 70 changes the current value detected temperature TH1 of the first thermistor 32 is supplied to the first temperature control device 31 so as to approach the temperature value T _LD.

  In parallel with step S8, the controller 70 performs ATC (Automatic Temperature Control) control so that the detected temperature TH2 of the second thermistor 55 is within the set range. Further, it is determined whether or not the detected temperature TH2 of the second thermistor 55 is within the set range (step S9). The setting range in this case is determined based on the setting temperature Tetln_A included in the update setting value. For example, the set range can be a predetermined range centered on the set temperature Tetln_A. If it is determined “No” in step S9, the controller 70 changes the current value supplied to the second temperature control device 53 so that the detected temperature TH2 of the second thermistor 55 approaches the set temperature Tetln_A. Even when it is determined as “Yes” in step S9, the operation of the ATC control by the second temperature control device 53 is continued.

The controller 70 waits until “Yes” is determined in both step S8 and step S9. When it is determined as “Yes” in both step S8 and step S9, the controller 70 performs an operation of opening the shutter (step S10). Specifically, operating the APC (Automatic Power Cotrol) control for controlling the current supplied to the electrode 21 of the SOA region C to the initial current value _{I SOA.} As a result, laser light having an updated wavelength is output from the semiconductor laser 30. In step S10, the APC (Automatic Power Control) control operation continues.

Next, the controller 70 ends the temperature control with the temperature value T _LD as a control target by the first temperature control device 31 (step S11). Next, the controller 70 starts AFC control by the first temperature control device 31 (step S12). That is, feedback control is performed so that the temperature of the first temperature control device 31 satisfies the feedback control target value ratio I _m2 / I _m1 . The ratio of the input light to the output light (front / rear ratio) of the etalon 52 indicates the oscillation wavelength of the semiconductor laser 30. The first temperature control device 31 is a parameter that controls the wavelength of the semiconductor laser 30. That is, in step S21, the AFC control for controlling the wavelength of the semiconductor laser 30 is operated by feedback controlling the temperature of the first temperature control device 31 so that the front-to-back ratio becomes I _m2 / I _m1 . Thereby, the required wavelength is realized. When the controller 70 confirms that the ratio I _m2 / I _m1 is within a predetermined range centered on the target value I _m2 / I _m1 at the fundamental wavelength selected in step S2, the controller 70 outputs a lock flag (step S13). . Thereafter, the execution of the flowchart ends.

  According to the present embodiment, when the oscillation wavelength is controlled, the temperature of the first temperature control device 31 is controlled in one direction from the low temperature to the high temperature. Thereby, the temperature of the first temperature control device 31 does not become lower than the range from T (Low) to T (High). Thereby, the power consumption of the 1st temperature control apparatus 31 can be suppressed.

  The light source to which this embodiment can be applied is not limited to the semiconductor laser 30 in FIG. Any semiconductor laser that can select the output wavelength by controlling the temperature of the wavelength selector may be used. For example, a DFB laser, a SG-DFB laser, a DFB array laser, and the like can be given.

  FIG. 9 discloses another example of a laser device that can be used in place of the semiconductor laser 30. As shown in FIG. 9, the laser module 30 a includes a plurality of DFB lasers 71, an optical coupler 72, and an optical amplifier 73. The plurality of DFB lasers 71 have different corrugation pitches. Or the semiconductor material which comprises an active layer may be varied. With such a configuration, each DFB laser 71 realizes different oscillation wavelengths at the same temperature and drive current. The output of each DFB laser 71 is coupled to an optical coupler 72. The optical coupler 72 connects the incident light to the optical amplifier 73. The optical amplifier 73 amplifies the incident light and outputs it to the outside. In selecting an output wavelength, first, one DFB laser 71 that covers a target wavelength band is selected. A desired oscillation wavelength is realized by controlling the temperature of the selected DFB laser 71 by the first temperature control device 31. Therefore, the number of DFB lasers 71 is prepared to cover the entire wavelength band required for the laser module 30a. The DFB laser 71 that was not selected is not supplied with driving power and is turned off.

DESCRIPTION OF SYMBOLS 1 Substrate 2 Lower clad layer 3 Active layer 4 Optical waveguide layer 6 Upper clad layer 7 Contact layer 8 Electrode 9 Insulating film 10 Heater 11 Power supply electrode 12 Ground electrode 15 Back electrode 16 End face film 17 End face film 18 Diffraction grating 19 Optical amplification layer 20 Contact layer 21 Electrode 30 Semiconductor laser 30a Laser module 31 First temperature control device 32 First thermistor 41 Beam splitter 42 First light receiving element 50 Detector 51 Beam splitter 52 Etalon 53 Second temperature control device 54 Second light receiving element 55 Second Thermistor 60 memory 70 controller 71 DFB laser 72 optical coupler 73 optical amplifier 100 tunable laser

Claims (4)

A method for controlling a wavelength tunable laser including the temperature of an optical waveguide as a driving condition,
Obtaining a first drive condition of the wavelength tunable laser for lasing at a first wavelength from a memory;
A second drive condition for driving the wavelength tunable laser at the second wavelength with reference to the first drive condition and a wavelength difference between the first wavelength and a second wavelength different from the first wavelength. A second step of calculating
A third step of driving the tunable laser based on the second driving condition obtained by the second step,
The wavelength tunable laser control method, wherein, in the second step, the second drive condition is calculated under a condition in which the temperature of the optical waveguide is always higher than the temperature of the optical waveguide indicated in the first drive condition.   The method of controlling a wavelength tunable laser according to claim 1, wherein the temperature of the wavelength tunable laser is controlled by a temperature control device including a Peltier element.   The method of controlling a wavelength tunable laser according to claim 1 or 2, wherein the wavelength tunable laser is an array type laser including a plurality of DFB lasers.   The tunable laser control method according to claim 1, wherein the tunable laser includes an SG-DFB.

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