JP2015082580A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

A method of manufacturing a semiconductor device and a semiconductor device manufactured thereby are provided that can improve the yield of a sealing layer and reduce the manufacturing cost of the semiconductor device.
A method of manufacturing an optical semiconductor device includes a preparation step of preparing a plurality of optical semiconductor elements mounted on a substrate and spaced apart from each other in the left-right direction, and a plurality of sealing layers containing particles 5 includes a sealing step of sealing the plurality of optical semiconductor elements 3 so as to correspond to each optical semiconductor element 3 on a one-to-one basis and are spaced apart in the left-right direction.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a method for manufacturing a semiconductor device and a semiconductor device manufactured thereby.

  Conventionally, a method for manufacturing a semiconductor device by sealing a semiconductor element such as a light emitting diode (LED) mounted on a substrate with a sealing sheet is known.

  For example, an encapsulating sheet in which a sealing resin layer containing particles such as phosphors and silica is laminated on a long release sheet so as to be continuous in the longitudinal direction is arranged at an interval in the longitudinal direction. There has been proposed a method for manufacturing an LED device in which a sealing resin layer is disposed opposite to a plurality of LEDs to seal the LEDs (see, for example, Patent Document 1 below).

JP 2012-142364 A

  However, in the LED device obtained by the method described in Patent Document 1, the sealing resin layer (that is, the sealing region) positioned relatively near each LED covers the upper surface and the side surface of the LED. Contributes to LED sealing. On the other hand, in the LED device, a sealing resin layer positioned relatively remotely with respect to each LED, specifically, a sealing resin layer positioned in the center (midway in the longitudinal direction) between adjacent LEDs (ie, non-blocking resin layer). The sealing region) does not substantially contribute to LED sealing. Therefore, in the LED device, the sealing resin layer in the non-sealing region becomes an unnecessary region in the LED sealing, and accordingly, the yield of the sealing resin layer containing the above-described particles is lowered. As a result, there is a problem that the manufacturing cost of the LED device increases.

  On the other hand, in the manufacturing method of the LED device, it is also tentative to remove the above-described non-sealing region after once forming the sealing resin layer. Since it contains an additive, it is difficult to recover and reuse only the particles from the removed non-sealed region. Therefore, there is still a problem that it is impossible to prevent a decrease in the yield of the sealing resin layer due to the formation of the non-sealing region and an increase in the manufacturing cost of the LED device due to it.

  An object of the present invention is to provide a method for manufacturing a semiconductor device and a semiconductor device manufactured thereby, which can improve the yield of a sealing layer and reduce the manufacturing cost of the semiconductor device.

  In order to achieve the above object, a method of manufacturing a semiconductor device of the present invention includes a preparation step of preparing a plurality of semiconductor elements mounted on a substrate and spaced apart from each other in a first direction, and a plurality of particles containing particles. The sealing layer includes a sealing step of sealing the plurality of semiconductor elements so that the semiconductor layers correspond to the semiconductor elements on a one-to-one basis and are spaced apart in the first direction.

  According to this method, in the sealing step, the plurality of semiconductor elements are sealed so that the plurality of sealing layers containing particles are spaced apart in the first direction in a one-to-one correspondence with each semiconductor element. Stop. That is, all of the plurality of sealing layers can contribute to the sealing of the plurality of semiconductor elements. Therefore, the sealing layer can be used effectively. As a result, the yield of the sealing layer can be improved and the manufacturing cost of the semiconductor device can be reduced.

  In the method for manufacturing a semiconductor device of the present invention, in the preparing step, the plurality of semiconductor elements are arranged at intervals in a second direction intersecting the first direction, and in the sealing step, The sealing layer is sealed by the sealing layer continuous in the second direction, and the sealing layer is divided into a plurality of parts in the second direction after the sealing step. And a cutting step of cutting the substrate. The semiconductor device further includes a plurality of the semiconductor elements adjacent to each other in the second direction. It is preferable to arrange the substrates so as to be smaller than the distance between the elements, and it is also preferable to prepare the substrate extending in the first direction in the preparation step.

  According to this method, in the preparation step, a plurality of semiconductor elements are arranged at intervals in both the first direction and the second direction, and then the semiconductor elements are sealed by the sealing layer in the sealing step. Therefore, the semiconductor device can be manufactured efficiently.

  Further, in the sealing step, the semiconductor elements arranged at intervals in the second direction are sealed by the sealing layer continuous in the second direction, so that the semiconductor elements can be sealed easily and efficiently. Can do.

  At the same time, since the sealing layer and the substrate are cut so that the sealing layer is divided into a plurality of parts in the second direction by the cutting step, the sealing layer continuous in the second direction can be used effectively. .

  In particular, in this method, the sealing layers are arranged so as to be spaced apart in the first direction, and even if the sealing layers are arranged so as to be continuous in the second direction, the plurality of semiconductor elements are arranged in the first direction. The semiconductor elements are arranged so that the distance between adjacent semiconductor elements in the two directions is smaller than the distance between adjacent semiconductor elements in the first direction. If it does so, the sealing layer cut | disconnected so that it may be divided | segmented into two or more by the cutting process can contribute to sealing of the semiconductor element adjacent to a 2nd direction efficiently. Therefore, the sealing layer can be used effectively.

  In particular, in the preparation step, since the substrate extending in the first direction is prepared, the substrate can be continuously supplied in the first direction. Therefore, the semiconductor device can be manufactured efficiently. Further, in the cutting step, the substrate extending in the first direction is cut so as to be divided into a plurality of parts in the second direction, so that the obtained semiconductor device is formed to extend in the first direction. Therefore, the length of the semiconductor device in the first direction can be adjusted to a desired dimension and used for various applications.

  As a result, it is possible to efficiently manufacture the semiconductor device while improving the yield of the sealing layer and reducing the manufacturing cost of the semiconductor device.

  In the method for manufacturing a semiconductor device of the present invention, it is preferable that in the sealing step, the semiconductor element is sealed with the sealing layer previously formed in a sheet shape.

  According to this method, since the semiconductor element is sealed by the sealing layer formed in advance in the form of a sheet, the thickness of the sealing layer can be accurately adjusted in advance, thereby improving the sealing accuracy. be able to. Therefore, a semiconductor device having excellent reliability can be manufactured.

  In the method for manufacturing a semiconductor device of the present invention, it is preferable that the particles contain a phosphor, the semiconductor element is an optical semiconductor element, and the method for manufacturing an optical semiconductor device.

  According to this method, the yield of the sealing layer can be improved and the manufacturing cost of the optical semiconductor device can be reduced.

  The semiconductor device of the present invention is obtained by the above-described method for manufacturing a semiconductor device.

  In this semiconductor device, the yield of the sealing layer is improved and the manufacturing cost is reduced.

  According to the method for manufacturing a semiconductor device of the present invention, the yield of the sealing layer can be improved and the manufacturing cost of the semiconductor device can be reduced.

  In the semiconductor device of the present invention, the yield of the sealing layer is improved, and the manufacturing cost is reduced.

FIG. 1 is a schematic plan view illustrating a method for manufacturing an optical semiconductor device according to the first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view along the left-right direction for explaining the method of manufacturing the optical semiconductor device shown in FIG. 3A and 3B are schematic cross-sectional process diagrams along the front-rear direction for explaining the method of manufacturing the optical semiconductor device shown in FIG. 1. FIGS. 3A and 3B are a preparation process, FIG. 3C is a sealing process, and FIG. Fig. 3E shows a cutting process, and Fig. 3E shows a peeling process. FIG. 4 is a schematic plan view illustrating a method for manufacturing an optical semiconductor device according to the second embodiment of the present invention. FIG. 5 is a schematic cross-sectional view along the left-right direction for explaining the method of manufacturing the optical semiconductor device shown in FIG. 6A and 6B are schematic cross-sectional process diagrams along the front-rear direction for explaining the method of manufacturing the optical semiconductor device shown in FIG. 4, FIGS. 6A and 6B are a preparation process, FIG. 6C is a sealing process, and FIG. Indicates a peeling step. FIG. 7 is a schematic plan view illustrating a method for manufacturing an optical semiconductor device according to the third embodiment of the present invention. FIG. 8 is a schematic plan view for explaining the method for manufacturing an optical semiconductor device according to the fourth embodiment of the present invention. FIG. 9 is a schematic plan view for explaining the method for manufacturing an optical semiconductor device according to the fifth embodiment of the present invention.

<First Embodiment>
In FIG. 1, the right side of the drawing is the front side (one side in the front-rear direction, which is an example of the first direction (downstream in the transport direction)), the left side of the page is the rear side (the other side in the front-rear direction (upstream in the transport direction)) Is the right side (one example of the second direction, one side in the left-right direction orthogonal to the front-rear direction), the lower side on the page is the left side (the other side in the left-right direction), and the front side is the upper side (the front-rear direction and the left-right direction) The thickness direction one side which is an example of the third direction orthogonal to the upper side, and the back side of the drawing indicates the lower side (the other side in the thickness direction). For drawings other than FIG. 1, the direction of FIG. 1 is used as a reference. In FIG. 1, the release sheet 6 is omitted in order to clearly show the relative arrangement of the optical semiconductor element 3 and the sealing layer 5.

  As shown in FIGS. 1-3, the manufacturing method of the optical semiconductor device 1 which is 1st Embodiment of this invention requires a preparation process (refer FIG. 3A and FIG. 3B) and a sealing process (refer FIG. 3C). Prepare as a process. Specifically, the manufacturing method of the optical semiconductor device 1 includes a preparation process (see FIGS. 3A and 3B), a sealing process (see FIG. 3C), a cutting process (see FIG. 3D), and a peeling process (see FIG. 3E). See). Hereinafter, each process is explained in full detail. In addition, each following process uses the optical semiconductor manufacturing apparatus described in Unexamined-Japanese-Patent No. 2013-51234, Unexamined-Japanese-Patent No. 2012-142364, etc., for example, the board | substrate 2 (after-mentioned) is made into the front side from the back side. That is, it is carried out while transporting from the upstream side toward the downstream side in the transport direction.

[Preparation process]
In the preparation step, first, as shown in FIGS. 1, 2 and 3A, a substrate 2 is prepared.

  The board | substrate 2 is formed in the substantially rectangular flat strip shape extended in the front-back direction. The substrate 2 is made of an insulating substrate such as a silicon substrate, a ceramic substrate, a polyimide resin substrate, or a laminated substrate in which an insulating layer is laminated on a metal substrate.

  On the upper surface of the substrate 2, a conductor pattern (including an electrode (not shown) for electrical connection with a terminal (not shown) of the optical semiconductor element 3 to be described below and a wiring continuous therewith is provided. (Not shown) is formed. The conductor pattern is formed from a conductor such as gold, copper, silver, or nickel.

  Moreover, as shown in FIG. 2, the board | substrate 2 is wound and prepared by roll shape, is drawn | fed out from a roll, and is continuously provided to an optical semiconductor manufacturing apparatus (not shown). Alternatively, instead of a roll, a long flat plate-like substrate 2 extending in the front-rear direction can be continuously provided to this optical semiconductor manufacturing apparatus (not shown).

  The dimension in plan view of the substrate 2 is appropriately selected. Specifically, the length (width) in the left-right direction is, for example, 5 mm or more, preferably 10 mm or more, and, for example, 250 mm or less, preferably 150 mm or less. The thickness of the board | substrate 2 is 25 micrometers or more, for example, Preferably, it is 500 micrometers or more, for example, is 5000 micrometers or less, Preferably, it is 3000 micrometers or less.

  Next, as shown in FIGS. 1, 2, and 3 </ b> B, a plurality of optical semiconductor elements 3 are mounted on the substrate 2.

  Specifically, a plurality of optical semiconductor elements 3 are arranged on the upper surface of the substrate 2 so as to be spaced apart from each other in the front-rear direction and the left-right direction. More specifically, a plurality of first element rows (left and right rows) 4A of the optical semiconductor elements 3 arranged in a row at intervals in the left-right direction are arranged at intervals in the front-rear direction. The Each first element row 4A is arranged in a straight line along the left-right direction so that the plurality of optical semiconductor elements 3 all overlap when projected in the left-right direction. Further, when the second element rows (front and rear rows) 4B of the plurality of optical semiconductor elements 3 adjacent to each other in the front-rear direction are projected in the front-rear direction, the plurality of optical semiconductor elements 3 are all overlapped in the front-rear direction. It is arranged in a straight line along.

  The optical semiconductor element 3 is a semiconductor element that converts electrical energy into optical energy, and is formed, for example, in a substantially rectangular shape in cross section.

  Examples of the optical semiconductor element 3 include an LED (light emitting diode element) such as a blue LED that emits blue light, and an LD (laser diode). The dimension of the optical semiconductor element 3 is appropriately set according to the application and purpose. Specifically, the thickness is, for example, 10 μm or more, and, for example, 1000 μm or less. The length of the optical semiconductor element 3 in the front-rear direction in plan view is, for example, 0.01 mm or more, preferably 0.1 mm or more, for example, 15 mm or less, preferably 20 mm or less, The left-right direction in plan view of the optical semiconductor element 3 is, for example, 0.01 mm or more, preferably 0.1 mm or more, and for example, 20 mm or less, preferably 15 mm or less.

  The distance between the optical semiconductor elements 3 in the front-rear direction (pitch in the front-rear direction), that is, the distance L2 between the optical semiconductor elements 3 in each second element row 4B is, for example, 3 mm or more, preferably 5 mm or more. For example, it is 150 mm or less, Preferably, it is 70 mm or less. On the other hand, the distance in the left-right direction between the optical semiconductor elements 3 (the pitch in the left-right direction), that is, the distance L1 between the optical semiconductor elements 3 in each first element row 4A is, for example, an optical semiconductor in each second element row 4B. It is smaller than the distance L2 between the elements 3 (that is, the relationship L1 <L2 is satisfied), and specifically, for example, less than 80%, preferably 50% or less with respect to the distance L2. Moreover, it is 15% or more. More specifically, the distance L1 is 0.45 mm or more, for example, 2.4 mm or less, and preferably 1.5 mm or less. If the distance L1 is greater than or equal to the distance L2, the yield of the sealing layer 5 after the cutting process described later may not be improved.

  Each optical semiconductor element 3 is mounted on the substrate 2 by, for example, flip chip. Alternatively, the optical semiconductor element 3 is connected to an electrode (not shown) of the substrate 2 by wire bonding.

  Thereby, the board | substrate 2 with which the optical semiconductor element 3 was mounted is prepared.

  In addition, the board | substrate 2 with which the optical semiconductor element 3 was mounted previously can also be prepared.

[Sealing process]
The sealing process is performed after the preparation process. As shown in FIGS. 2 and 3B, in the sealing step, first, a plurality of sealing layers 5 are prepared.

  Each sealing layer 5 is formed in advance in the form of a sheet. For example, as shown in FIG. 1, a substantially rectangular shape in plan view corresponding to each first element row 4 </ b> A that is long (continuous) in the left-right direction. Is formed.

  In order to prepare the sealing layer 5, first, a sealing composition is prepared.

  The sealing composition contains particles as essential components, and specifically contains particles and a resin.

  Examples of the particles include phosphors and fillers.

  The phosphor has a wavelength conversion function, and examples thereof include a yellow phosphor capable of converting blue light into yellow light, and a red phosphor capable of converting blue light into red light.

Examples of the yellow phosphor include silicate phosphors such as (Ba, Sr, Ca) ₂ SiO ₄ ; Eu, (Sr, Ba) ₂ SiO ₄ : Eu (barium orthosilicate (BOS)), for example, Y ₃ Al Garnet-type phosphors having a garnet-type crystal structure such as ₅ O ₁₂ : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb ₃ Al ₃ O ₁₂ : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca-α-SiAlON. Examples of the red phosphor include nitride phosphors such as CaAlSiN ₃ : Eu and CaSiN ₂ : Eu. Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape. Preferably, spherical shape is mentioned from a fluid viewpoint. The average value of the maximum length of the phosphor (in the case of a sphere, the average particle diameter) is, for example, 0.1 μm or more, preferably 1 μm or more, and for example, 200 μm or less, preferably 100 μm or less. It is. The phosphors can be used alone or in combination. The blending ratio of the phosphor is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example, 80 parts by mass or less, preferably 50 parts by mass or less with respect to 100 parts by mass of the resin. It is.

  Examples of the filler include organic fine particles such as silicone particles, and inorganic fine particles such as silica, talc, alumina, aluminum nitride, and silicon nitride. Further, the average value of the maximum length of the filler (in the case of a spherical shape, the average particle diameter) is, for example, 0.1 μm or more, preferably 1 μm or more, and, for example, 200 μm or less, preferably 100 μm or less. The filler can be used alone or in combination. The blending ratio of the filler is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, and, for example, 70 parts by mass or less, preferably 50 parts by mass with respect to 100 parts by mass of the resin. Or less.

  The mixing ratio of the particles is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, and, for example, 80 parts by mass or less, preferably 60 parts by mass with respect to 100 parts by mass of the resin. It is as follows.

  Examples of the resin include a thermoplastic resin that is plasticized by heating, for example, a thermosetting resin that is cured by heating, for example, an active energy ray curable that is cured by irradiation with active energy rays (for example, ultraviolet rays, electron beams, etc.). Resin etc. are mentioned. Examples of the thermoplastic resin include vinyl acetate resin, ethylene / vinyl acetate copolymer (EVA), vinyl chloride resin, EVA / vinyl chloride resin copolymer, and the like. Examples of the thermosetting resin include silicone resin, epoxy resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin. The resin preferably includes a curable resin such as a thermosetting resin and an active energy ray curable resin.

  Examples of the curable resin include silicone resin, epoxy resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin. Examples of the curable resin include a two-stage curable resin and a one-stage curable resin, and a two-stage curable resin is preferable.

  The two-stage curable resin has a two-stage reaction mechanism, and is B-staged (semi-cured) by the first-stage reaction and C-staged (final-cured) by the second-stage reaction. On the other hand, the one-step curable resin has a one-step reaction mechanism and is completely cured by the first-step reaction. The B stage is a state between the A stage in which the curable resin is in a liquid state and the fully cured C stage, and the curing and gelation are slightly advanced, and the compression elastic modulus is the elasticity of the C stage. It is a state smaller than the rate.

  To prepare the sealing composition, particles and a resin are blended. In addition, when resin is curable resin, the resin at the time of a mixing | blending is A stage.

  Subsequently, in this method, the prepared sealing composition is applied to the surface of the release sheet 6. Specifically, the sealing composition is applied to the surface of the release sheet 6 with an appropriate thickness by a method such as casting, spin coating, roll coating, or the like, to form a film. Specifically, as shown in FIG. 2, a film of the sealing composition is formed on the lower surface of the release sheet 6 with a pattern corresponding to the first element row 4A.

  Thereafter, if necessary, when the resin is a curable resin, the film is heated and / or irradiated with active energy rays. More specifically, when the resin contains a two-step curable resin, the sealing layer 5 is B-staged (semi-cured) by heating and / or active energy ray irradiation.

  Thereby, the sheet-like sealing layer 5 is formed so as to be supported by the release sheet 6.

  The plurality of sealing layers 5 extending in the left-right direction are disposed on the lower surface of the release sheet 6 at intervals in the front-rear direction. As shown in FIG. 1, each sealing layer 5 is provided on the board | substrate 2 so that each 1st element row | line | column 4A can be coat | covered collectively, ie, it continues in the left-right direction.

  The dimension of the sealing layer 5 is appropriately adjusted depending on the use and purpose. Specifically, the length (width) in the front-rear direction is longer than the length (width) in the front-rear direction of the optical semiconductor element 3, specifically, The width of the optical semiconductor element 3 is, for example, 1 mm or more, preferably 2 mm or more, more preferably 3 mm or more, and for example, 10 mm or less. Further, the length of the release sheet 6 in the left-right direction is the same as the length of the substrate 2 in the left-right direction. The width of the interval L3 between the sealing layers 5 adjacent in the front-rear direction is, for example, 0.5 mm or more, preferably 10 mm or more, and, for example, 100 mm or less, preferably 50 mm or less.

  Subsequently, the plurality of sealing layers 5 are arranged such that each sealing layer 5 faces the optical semiconductor element 3 of each first element row 4A in the thickness direction.

  Thereafter, as shown in FIGS. 1, 2, and 3 </ b> C, the plurality of optical semiconductor elements 3 are sealed by the plurality of sealing layers 5. Specifically, as shown by arrows in FIGS. 2 and 3B, the plurality of sealing layers 5 are pushed down relative to the substrate 2. Thus, each of the plurality of sealing layers 5 collectively covers (embeds) and seals the plurality of optical semiconductor elements 3 corresponding to each of the plurality of first element rows 4A.

  On the other hand, in each second element row 4B, each of the plurality of sealing layers 5 embeds each of the plurality of optical semiconductor elements 3. That is, in each second element row 4B, each sealing layer 5 embeds each optical semiconductor element 3 on a one-to-one basis. Further, in each second element row 4B, the plurality of sealing layers 5 embed the plurality of optical semiconductor elements 3 so as to be spaced apart in the left-right direction corresponding to the respective optical semiconductor elements 3.

  As a result, the upper surface and side surfaces (all side surfaces, specifically, the front side surface, the rear side surface, the right side surface, and the left side surface) of each optical semiconductor element 3 are covered with the sealing layer 5. Further, the upper surface of the substrate 2 corresponding to the first element row 4A (in the vicinity of each optical semiconductor element 3) is covered with the sealing layer 5, while not corresponding to the first element row 4A (in each optical semiconductor element 3). On the other hand, the upper surface of the substrate 2 located remotely, ie, located in the middle between the adjacent optical semiconductor elements 3, is exposed from the sealing layer 5. As a result, the substrate 2 has a sealing region 7 corresponding to the first element row 4A where the sealing layer 5 is formed, and an exposed region exposed from the sealing layer 5 that does not correspond to the first element row 4A. (Non-sealing region) 8 is formed.

  Thereafter, when the sealing layer 5 contains a curable resin, the sealing layer 5 is made to be C-staged (completely cured).

  As a result, an optical semiconductor device assembly 9 including a single substrate 2, a plurality of optical semiconductor elements 3, a plurality of sealing layers 5, and a single release sheet 6 is obtained.

[Cutting process]
The cutting process is performed after the sealing process. In the cutting step, the optical semiconductor device assembly 9 is cut so that the sealing layer 5 corresponding to each first element row 4A is divided into a plurality of parts in the left-right direction, as indicated by broken lines in FIGS. 1 and 3D. That is, in the cutting step, the sealing layer 5 and the substrate 2 are cut so that the sealing layers 5 corresponding to the plurality of optical semiconductor elements 3 are divided into a plurality of parts in the left-right direction. In the cutting of the optical semiconductor device assembly 9, the sealing layer 5 between the optical semiconductor elements 3 in the first element array 4A and the plurality of optical semiconductor elements 3 in each first element array 4A are separated. The substrate 2 is cut. The plurality of optical semiconductor elements 3 corresponding to the second element rows 4B are not separated into pieces, while the sealing layer 5 and the substrate 2 between the optical semiconductor elements 3 in the first element row 4A are cut and applied. The optical semiconductor element 3 is singulated. In order to cut the optical semiconductor device assembly 9, for example, a dicing device using a dicing blade, a cutting device using a cutter, a laser irradiation device, or the like is used.

  Accordingly, as shown in FIG. 9, the substrate 2, the plurality of optical semiconductor elements 3 arranged in a line in the front-rear direction, and the plurality of optical semiconductor elements 3 are sealed, and An optical semiconductor as an example of a semiconductor device including a sealing layer 5 provided so as to form a sealing region 7 and an exposed region 8 on the substrate 2 and a release sheet 6 (see FIG. 3D) that supports the sealing layer 5 Device 1 is obtained.

[Peeling process]
In the peeling step, the release sheet 6 is peeled from the sealing layer 5 as indicated by arrows in FIGS. 2 and 3E.

  Thus, the optical semiconductor device 1 including the substrate 2, the optical semiconductor element 3, and the sealing layer 5 is obtained.

  The obtained optical semiconductor device 1 is used in, for example, the optical field, specifically, a light emitting device (not shown).

<Operational effects of the first embodiment>
According to this method, in the sealing step, the plurality of sealing layers 5 containing particles are spaced apart in the front-rear direction in a one-to-one correspondence with the optical semiconductor elements 3 of each second element row 4B. In addition, a plurality of semiconductor elements 3 are sealed. That is, all of the plurality of sealing layers 5 corresponding to the sealing region 7 can contribute to the sealing of the plurality of semiconductor elements 3. Therefore, the sealing layer 5 can be used effectively. As a result, the yield of the sealing layer 5 can be improved and the manufacturing cost of the optical semiconductor device 1 can be reduced.

  Further, according to this method, in the preparation step, a plurality of optical semiconductor elements 3 are arranged on the substrate 2 with an interval in both the front-rear direction and the left-right direction. Is sealed by the sealing layer 5, so that the optical semiconductor device 1 can be efficiently manufactured.

  Further, in the sealing step, the optical semiconductor elements 3 arranged at intervals in the left-right direction are sealed by the sealing layer 5 continuous in the left-right direction, so that the optical semiconductor elements 3 can be sealed easily and efficiently. Can be stopped.

  At the same time, the sealing layer 5 and the substrate 2 are cut so that the sealing layer 5 is divided into a plurality of parts in the left-right direction by the cutting step, so that the sealing layer 5 continuous in the left-right direction is effectively used. Can do.

  In particular, in this method, the sealing layer 5 is disposed so as to be spaced apart in the front-rear direction, and even if the sealing layer 5 is disposed so as to be continuous in the left-right direction, a plurality of optical semiconductor elements 3 are formed. The space L1 between the adjacent optical semiconductor elements 3 in the left-right direction is set to be smaller than the distance L2 between the adjacent optical semiconductor elements 3 in the front-rear direction. If it does so, the sealing layer 5 cut | disconnected so that it may be divided | segmented into multiple pieces in the left-right direction by a cutting process can contribute effectively to sealing of the optical semiconductor element 3 adjacent to the left-right direction. Therefore, the sealing layer 5 can be used efficiently.

  In particular, since the substrate 2 extending in the front-rear direction is prepared in the preparation step, the substrate 2 can be continuously supplied in the front-rear direction. Therefore, the optical semiconductor device 1 can be manufactured efficiently. Further, in the cutting step, the substrate 2 extending in the front-rear direction is cut so as to be divided into a plurality of parts in the front-rear direction, so that the obtained optical semiconductor device 1 is formed to extend in the front-rear direction. Therefore, the length of the optical semiconductor device 1 in the left-right direction can be adjusted to a desired dimension, and can be suitably used for various applications, specifically, a light emitting device (not shown) that is long in the front-rear direction.

  As a result, the optical semiconductor device 1 can be efficiently manufactured while improving the yield of the sealing layer 5 and reducing the manufacturing cost of the optical semiconductor device 1.

  Further, according to this method, since the optical semiconductor element 3 is sealed by the sealing layer 5 previously formed in a sheet shape, the thickness of the sealing layer 5 can be accurately adjusted in advance. The accuracy of stopping can be improved. Therefore, the optical semiconductor device 1 having excellent reliability can be manufactured.

  Moreover, according to this method, the yield of the sealing layer 5 can be improved and the manufacturing cost of the optical semiconductor device 1 can be reduced.

  In this optical semiconductor device 1, the yield of the sealing layer 5 is improved, and the manufacturing cost is reduced.

<Modification of First Embodiment>
In the first embodiment, the optical semiconductor element 3 is embedded and sealed by the sealing layer 5 previously formed in a sheet shape. For example, the varnish made of the sealing composition is used as the substrate 2 and the optical semiconductor element. 3 may be applied directly so as to have the above-described pattern.

  According to this method, it is not necessary to prepare the release sheet 6. Therefore, the optical semiconductor device 1 can be obtained without performing the peeling process. As a result, man-hours can be reduced, and the optical semiconductor device 1 can be manufactured by a simple process and at a low cost.

  In the above description, the sealing layer 5 is formed from a single layer, but the sealing layer 5 can also be formed by laminating a plurality of different types of layers in the thickness direction. In that case, particles may be included as an essential component in any one of the plurality of layers constituting the sealing layer 5. In other words, the remaining layer of the plurality of layers constituting the sealing layer 5 can be configured as a layer not containing particles.

  Moreover, although the optical semiconductor element 3 has been described as an example of the semiconductor element in the present invention, for example, although not illustrated, they can be electronic elements.

  An electronic element is a semiconductor element that converts electrical energy into energy other than light, specifically signal energy, and specifically includes a transistor, a diode, and the like. The dimensions of the electronic element are appropriately selected depending on the application and purpose.

  In this case, examples of the filler contained in the sealing layer 5 include black pigments such as carbon black. The blending ratio of the filler is, for example, 5 parts by mass or more, preferably 10 parts by mass or more, and for example, 99 parts by mass or less, preferably 95 parts by mass or less with respect to 100 parts by mass of the resin. .

  Further, the physical properties (specifically, the compression elastic modulus, etc.) of the sealing layer 5 are the same as those of the first embodiment described above.

  In the above-described embodiment, as shown by the broken lines in FIGS. 1 and 3D, in the cutting process, a plurality (seven) of optical semiconductor elements 3 in each first element row 4A are singulated, that is, one. The optical semiconductor device assembly 9 is cut so that each optical semiconductor element 3 is obtained. However, for example, although not shown, the optical elements are configured so as to form an aggregate of optical semiconductor elements 3 that is smaller in number (specifically, 2 to 6) than the number of optical semiconductor elements 3 in each first element row 4A. The semiconductor device assembly 9 can also be cut. In that case, in the cut optical semiconductor device assembly 9, the spacing in the left-right direction between the plurality of optical semiconductor elements 3 in one assembly is, for example, 0.5 mm or more, for example, 3 mm or less.

Second Embodiment
The manufacturing method of the optical semiconductor device 1 which is 2nd Embodiment of this invention is demonstrated with reference to FIGS.

  4 to 6, the same members and steps as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the first embodiment, the plurality of sealing layers 5 extend in the left-right direction and are arranged on the substrate 2 at intervals in the front-rear direction. In the second embodiment, the plurality of sealing layers 5 are provided. It can also be arranged on the substrate 2 so as to extend in the front-rear direction and be spaced apart from each other in the left-right direction.

  The manufacturing method of the optical semiconductor device 1 includes a preparation process (see FIGS. 6A and 6B), a sealing process (see FIG. 6C), a cutting process (see FIGS. 4 and 5), and a peeling process (see FIG. 6D). Is provided.

[Sealing process]
The sealing process is performed after the preparation process. In the sealing step, first, as shown in FIGS. 5 and 6B, a plurality of sealing layers 5 are prepared.

  Each sealing layer 5 is formed in advance in the form of a sheet, and as shown in FIG. 4, for example, is formed in a substantially rectangular shape in plan view corresponding to each second element row 4 </ b> B and extending in the front-rear direction. The length in the left-right direction of each sealing layer 5 is the same as the length in the front-rear direction of each sealing layer 5 in the first embodiment, for example. Further, the interval between the sealing layers 5 adjacent in the left-right direction is the same as the interval L3 between the sealing layers 5 adjacent in the front-rear direction in the first embodiment.

[Cutting process]
In the cutting step, as shown in FIGS. 4 and 5, the optical semiconductor device assembly 9 is cut so that the sealing layer 5 corresponding to each second element row 4B is divided into a plurality of parts in the front-rear direction. That is, in the cutting step, the sealing layer 5 and the substrate 2 are cut so that the sealing layers 5 corresponding to the plurality of optical semiconductor elements 3 are divided into a plurality of parts in the front-rear direction. In the cutting of the optical semiconductor device assembly 9, the sealing layer 5 between the optical semiconductor elements 3 in the second element row 4B and the plurality of optical semiconductor elements 3 in each second element row 4B are separated. The substrate 2 is cut.

<Effects of Second Embodiment>
According to the second embodiment, unlike the first embodiment, in the sealing process, the optical semiconductor elements 3 arranged at intervals in the front-rear direction are sealed by the sealing layer 5 continuous in the front-rear direction. Therefore, the optical semiconductor element 3 adjacently disposed in the front-rear direction can be easily and efficiently sealed.

  At the same time, the sealing layer 5 and the substrate 2 are cut by the cutting step so that the sealing layer 5 is divided into a plurality of portions in the front-rear direction, so that the substrate 2 continuous in the front-rear direction can be used effectively.

  On the other hand, the several optical semiconductor device 1 provided with the sealing layer 5 and the board | substrate 2 with the same left-right direction length can be manufactured efficiently.

  On the other hand, when arranging a plurality of optical semiconductor elements 3 such that the distance L1 between the adjacent optical semiconductor elements 3 in the left-right direction is smaller than the distance L2 between the adjacent optical semiconductor elements 3 in the front-rear direction (that is, If the relationship of L1 <L2 is satisfied), if the sealing layer 5 that has been continuous in the front-rear direction is cut into a plurality of parts in the front-rear direction by the cutting process, Due to the spacing, the area of the margin of the sealing layer 5 with respect to the optical semiconductor element 3 in the left-right direction (that is, the outer side portions of the optical semiconductor element 3 in the left-right direction) It is larger than the area of the margin of the stop layer 5 (that is, both outer portions in the front-rear direction of the optical semiconductor element 3). Therefore, the yield of the sealing layer 5 is much better in the first embodiment than in the second embodiment.

<Third Embodiment>
A method for manufacturing the optical semiconductor device 1 according to the third embodiment of the present invention will be described with reference to FIG.

  In FIG. 7, members and processes similar to those of the second embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the first embodiment and the second embodiment, as shown in FIGS. 1 and 4, in the preparation step, the plurality of optical semiconductor elements 3 are separated by a distance L1 between the adjacent optical semiconductor elements 3 in the left-right direction. It arrange | positions so that it may become smaller than the space | interval L2 between the adjacent optical semiconductor elements 3 in a direction, ie, the relationship of L1 <L2 may be satisfied. However, in the third embodiment, as shown in FIG. 7, in the preparation step, the plurality of optical semiconductor elements 3 are separated from each other in the interval L1 between the optical semiconductor elements 3 adjacent in the left-right direction. It arrange | positions so that it may become larger than the space | interval L2 between, ie, the relationship of L1> L2 may be satisfied.

  That is, the left-right direction interval (left-right direction pitch) L1 between the respective optical semiconductor elements 3 is, for example, 3 mm or more, preferably 5 mm or more, and, for example, 150 mm or less, preferably 70 mm or less. On the other hand, the front-rear direction interval (pitch in the front-rear direction) L2 between the optical semiconductor elements 3 is smaller than the horizontal interval (pitch in the left-right direction) L1 between the optical semiconductor elements 3, for example (ie, the pitch in the left-right direction). Specifically, for example, the distance L1 is less than 80%, preferably 50% or less, and 15% or more with respect to the distance L1. More specifically, the distance L2 is 0.45 mm or more, for example, 2.4 mm or less, and preferably 1.5 mm or less. If the distance L2 is greater than or equal to the distance L1, the yield of the sealing layer 5 after the cutting process described later may not be improved.

<Operational effects of the third embodiment>
In the third embodiment, in the preparing step, the interval L1 between the optical semiconductor elements 3 adjacent in the left-right direction is larger than the interval L2 between the optical semiconductor elements 3 adjacent in the front-rear direction. Thus, in other words, since it is arranged so as to satisfy the relationship of L1> L2, in the subsequent cutting process, the sealing layer 5 that has been continuous in the front-rear direction is cut so as to be divided into a plurality of parts in the front-rear direction. For example, the area of the margin of the sealing layer 5 with respect to the optical semiconductor element 3 in the left-right direction (that is, the left and right outer portions of the optical semiconductor element 3) in the left-right direction depends on the above-described interval between the optical semiconductor elements 3. It is wider than the area of the margin of the sealing layer 5 with respect to the optical semiconductor element 3 in the left-right direction of the form (that is, both outer portions in the front-rear direction of the optical semiconductor element 3). Therefore, the yield of the sealing layer 5 is much better in the third embodiment than in the second embodiment.

<Fourth embodiment>
A method for manufacturing the optical semiconductor device 1 according to the fourth embodiment of the present invention will be described with reference to FIG.

  In FIG. 8, the same members and steps as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the first embodiment, the sealing layer 5 is formed in a pattern corresponding to the plurality of optical semiconductor elements 3 in each first element row 4A. In the second embodiment, the sealing layer 5 is formed in each second The pattern is formed in a pattern corresponding to the plurality of optical semiconductor elements 3 in the element row 4B. For example, as shown in FIG. 8, a plurality of patterns are arranged in a pattern corresponding to a single (one) optical semiconductor element 3. You can also.

[Sealing process]
Each sealing layer 5 corresponds to each optical semiconductor element 3, and specifically, is formed in a substantially rectangular shape in plan view including each optical semiconductor element 3 in plan view. In addition, the plurality of sealing layers 5 are aligned and spaced from each other in the front-rear direction and the left-right direction.

  On the other hand, the exposed region 8 is formed in a substantially grid pattern surrounding the sealing region 7 in plan view.

[Cutting process]
In the cutting step, for example, the substrate 2 is cut so that the optical semiconductor elements 3 are separated into pieces.

  Alternatively, the optical semiconductor device 1 having the plurality of optical semiconductor elements 3 can be obtained by cutting the substrate 2 so that the plurality of optical semiconductor elements 3 form a unit.

<Effects of Fourth Embodiment>
In this method, since only the substrate 2 is cut without cutting the sealing layer 5 in the cutting step, damage to the sealing layer 5 associated with the cutting of the sealing layer 5 can be prevented.

<Fifth Embodiment>
A method for manufacturing the optical semiconductor device 1 according to the fifth embodiment of the present invention will be described with reference to FIG.

  In FIG. 9, the same members and steps as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the first embodiment, a plurality of optical semiconductor elements 3 are arranged on the substrate 2 so that the first element row 4A and the second element row 4B are formed. For example, as shown in FIG. It can also be arranged on the substrate 2 so that only the second element row 4B is formed.

  In other words, the plurality of optical semiconductor elements 3 are arranged in one row (vertical column) in the left-right direction with an interval in the front-rear direction with respect to the substrate 2.

  The method according to the fifth embodiment does not include the cutting step described in the first embodiment. That is, the release sheet 6 after the sealing step is peeled from the sealing layer 5 in the peeling step to obtain the optical semiconductor device 1.

<Operational Effects of Fifth Embodiment>
Since this method does not include a cutting process, the number of steps can be reduced, and the optical semiconductor device 1 can be manufactured with a simple process and a reduced manufacturing cost.

DESCRIPTION OF SYMBOLS 1 Optical semiconductor device 2 Substrate 3 Optical semiconductor element 5 Sealing layer L1 The space | interval L2 between the optical semiconductor elements adjacent in the left-right direction The space | interval between the optical semiconductor elements adjacent in the front-back direction

Claims (7)

Preparing a plurality of semiconductor elements mounted on a substrate and spaced apart from each other in a first direction; and
A sealing step of sealing the plurality of semiconductor elements so that the plurality of sealing layers containing particles are spaced apart in the first direction in a one-to-one correspondence with the semiconductor elements; A method for manufacturing a semiconductor device. In the preparing step, the plurality of semiconductor elements are arranged at intervals in a second direction intersecting the first direction,
In the sealing step, the semiconductor element is sealed by the sealing layer continuous in the second direction,
The method further includes a cutting step of cutting the sealing layer and the substrate so that the sealing layer corresponding to the plurality of semiconductor elements is divided into a plurality of portions in the second direction after the sealing step. A method for manufacturing a semiconductor device according to claim 1. The plurality of semiconductor elements are arranged such that an interval between the semiconductor elements adjacent in the second direction is smaller than an interval between the semiconductor elements adjacent in the first direction. The manufacturing method of the semiconductor device as described in 2 .. The method for manufacturing a semiconductor device according to claim 2, wherein, in the preparing step, the substrate extending in the first direction is prepared. 5. The method of manufacturing a semiconductor device according to claim 1, wherein, in the sealing step, the semiconductor element is sealed with the sealing layer formed in a sheet shape in advance. . The particles contain a phosphor;
The semiconductor device manufacturing method according to claim 1, wherein the semiconductor element is an optical semiconductor device manufacturing method which is an optical semiconductor element. A semiconductor device obtained by the method for manufacturing a semiconductor device according to claim 1.

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