JP2015076328A - Plasma processor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing apparatus having an electrode structure for forming a large electrode used for atmospheric pressure plasma processing or low pressure plasma processing and forming a uniform film. The present invention relates to a plasma processing apparatus 1 comprising an electrode portion 2 provided opposite to the substrate 4 in order to apply a voltage to the substrate 4 to be processed. A plurality of parallelogrammic electrodes 30 having a pair of parallel sides 30a, 30b positioned perpendicular to the traveling direction of the substrate 4 and a pair of inclined sides 30c, 30d inclined with respect to the traveling direction of the substrate 4; The gas inlet 5 formed parallel to the parallel sides 30a and 30b of the parallelogram electrode 30 on both sides of the substrate 4 in the direction of travel of the substrate 4 It is provided with flanges 7 and 8 for holding the gas discharged toward the substrate 4 and discharged from the gas inlet 5 on the substrate. [Selection] Figure 1

Description

  The present invention relates to a plasma processing apparatus for performing atmospheric pressure plasma processing or reduced pressure plasma processing.

  A plasma processing apparatus disclosed in Patent Document 1 (Japanese Patent Application Laid-Open No. 2006-32795) includes a transmitter that transmits high-frequency power and a power electrode that is supplied with the high-frequency power from the transmitter. In a power supply apparatus used in a plasma processing apparatus that forms plasma with a substrate that is opposed to and relatively moves, and performs plasma processing on the substrate, the power electrode is a small electrode divided into a plurality of parts The power supply apparatus is characterized in that a gap is formed between the small electrodes, and the gap is arranged to be inclined with respect to the transport direction of the substrate, and the internal pressure can be adjusted. A chamber, a processing gas supply means for supplying a gas to be processed in the chamber, a ground electrode provided to hold a substrate in the chamber and grounded, And a substrate transfer means for moving the substrate in a direction substantially perpendicular to the power supply device, whereby uniform and high-density plasma is formed on the substrate surface, so that the processing speed for a large-area substrate is increased. Improvement, reduction of production cost, and improvement of processing quality can be achieved.

  Patent Document 2 (Japanese Patent Laid-Open No. 2002-25993) discloses an ashing chamber in which an object outlet, an ashing gas exhaust port, and a gas supply unit are formed on one side, and a photoresist is applied in the ashing chamber. From a lower electrode on which an object is seated, an RF power source that applies power to the lower electrode, and a microwave generator, a waveguide, a plasma protective chamber, and a magnetic coil that form plasma in the ashing chamber An ashing device comprising an ECR source, a power supply device that applies power to the ECR source, and a scanning device that drives the ECR back and forth or left and right, wherein the waveguide shape of the ECR source is rectangular, parallelogram, It is disclosed that it is one of a circular or elliptical shape.

JP 2006-32795 A JP 2002-25993 A

  As described in the background art section of Patent Document 1, at present, in order to improve the productivity of the substrate on which the film is formed and realize a significant reduction in production cost, a plasma processing apparatus accompanying an increase in area There is a demand for larger electrodes. For this reason, it has been considered to form a large electrode by arranging a plurality of small electrodes, but there is a problem that streaky unevenness occurs in the moving direction of the substrate and the film pressure of the substrate is not uniformly formed. Occurred. For this reason, as shown in the above-mentioned patent document, by arranging the small electrodes in a state inclined with respect to the transport direction of the substrate, the substrate always moves not only in the gap but also in the tolerance of the small electrode. Uniform processing (for example, film formation) is possible without causing streak-like unevenness due to gaps between the small electrodes in the transport direction.

  However, in the conventional apparatus, since a gap is formed between the small electrodes arranged to be inclined in the advancing direction of the substrate, a slight interference occurs in the electric field between the electrodes, which is delicate in the film formation of the substrate. There was a problem of giving change.

  For this reason, the present invention provides a plasma processing apparatus having an electrode structure for forming a large electrode used for atmospheric pressure plasma processing or reduced pressure plasma processing and forming a uniform film.

  Therefore, the present invention is processed in a plasma processing apparatus that constitutes one of the electrodes provided to generate plasma on the substrate to be processed and includes an electrode portion disposed to face the substrate. In the plasma processing apparatus including an electrode portion provided to face the substrate in order to generate plasma with respect to the substrate, the electrode portion is a pair of parallel sides positioned perpendicular to the traveling direction of the substrate And a plurality of parallelogram electrodes having a pair of inclined sides inclined with respect to the traveling direction of the substrate, and formed upstream of the substrate in the traveling direction and parallel to the parallel sides of the parallelogram electrode. A gas introduction port, and a flange that is located on both the front and rear sides of the electrode portion in the substrate traveling direction and holds the gas discharged from the gas introduction port on the substrate.

  Therefore, according to the present invention, the plurality of parallelogram electrodes arranged perpendicular to the traveling direction of the substrate to be processed, the gas inlets formed in parallel to the plurality of parallelogram electrodes, and the substrate traveling direction Since the gas is held on the substrate that moves opposite to the electrode portion by the electrode portion having the flange portions provided on both sides, the generated plasma can be maintained, so that the processing by the plasma is efficiently performed. It is something that can be done.

  In addition, it is preferable that a plurality of the parallelogram electrodes constitute an electrode group arranged perpendicular to the traveling direction of the substrate. In this case, the parallelogram electrodes constituting the electrode group arranged in the vertical direction may be arranged with a predetermined gap, or may be arranged so as to be in contact with each other. By increasing the number of electrodes in accordance with the width of the substrate to be processed, it is possible to lengthen the electrodes themselves. Furthermore, by adopting parallelogram electrodes, the plasma distribution between the electrodes in the direction of travel of the substrate is uniform. It can be made.

  Furthermore, it is desirable that a plurality of the electrode groups are arranged along the traveling direction of the substrate.

  Thus, the plasma processing time can be extended by increasing the number of electrode groups.

  Furthermore, it is desirable that the gas introduction port is disposed at a predetermined interval from the parallelogram electrode, and the gas introduction port is disposed in contact with the parallelogram electrode. Also good. Furthermore, it is preferable that the gas inlet is formed upstream of the parallelogram electrode in the substrate traveling direction.

  The parallelogram electrodes are preferably composed of an electrode plate made of a conductive material and an insulating material made of an inorganic insulator or an organic insulator surrounded by the electrode plate. Furthermore, the thickness of the electrode plate is preferably in the range of 10 to 100 μm, and the thickness of the insulator on the electrode plate is preferably in the range of 10 μm to 10 mm.

  Furthermore, it is preferable that the flange extends from both ends of the electrode portion in the substrate traveling direction toward the substrate, and extends along the substrate from both ends of the electrode portion in the substrate traveling direction. It may be a thing.

  Furthermore, it is preferable that the substrate is formed in a cylindrical shape whose side faces oppose the electrode portion, and the flange portion extends from the electrode portion along a peripheral surface of the cylindrical substrate.

  In addition, it is preferable that a metal mesh is disposed at the front ends of the flange portions on both sides, and the metal mesh is grounded and applied to the opposite polarity of the electrode portion.

  According to the plasma processing apparatus of the present invention, since the gas can be efficiently confined on the moving substrate, the plasma can be effectively held on the substrate, so that the plasma processing effect can be increased. Is.

It is a schematic block diagram of the plasma processing apparatus which concerns on this invention. It is explanatory drawing which showed the electrode part which concerns on Example 1 of this invention. It is explanatory drawing which showed the electrode part which concerns on Example 2 of this invention. It is explanatory drawing which showed the electrode part which concerns on Example 3 of this invention. It is explanatory drawing which showed the electrode part which concerns on Example 4 of this invention. It is explanatory drawing which showed the parallelogram electrode of this invention, (a) is a top view, (b) is sectional drawing. It is a schematic block diagram of the plasma processing apparatus which concerns on Example 5 of this invention. It is a schematic block diagram of the plasma processing apparatus which concerns on Example 6 of this invention. It is a schematic block diagram of the plasma processing apparatus which concerns on Example 7 of this invention.

  Embodiments of the present invention will be described below with reference to the drawings.

  For example, as shown in FIG. 1, the plasma processing apparatus 1 according to the present invention has a frequency of about 1 MHz to 500 MHz (1000 MHz) generated by the high frequency generator 6 and several W to several hundreds with respect to the substrate 4 to be processed. An electrode group 3 composed of a plurality of parallelogram electrodes 30 to which high-frequency power having W power is applied; a gas inlet 5 for supplying a processing gas to the upper portion of the substrate 4; The electrode part 2 which has at least the collar parts 7 and 8 formed in this is comprised. Further, in this embodiment, the above-described high-frequency power is used. However, a DC pulse voltage having a frequency of 1 Hz to 100 Hz and a voltage (peak value) of 1 kV to 50 kV, and AC power obtained by boosting commercial AC power to 1 kV to 50 kV. May be used, and in these cases, the same effect can be obtained. In the first embodiment, the substrate 4 to be processed is provided with a potential having a polarity opposite to that of the electrode group 3 by the counter electrode portion 40 through the insulating layer 41 formed of an insulator.

  With the above configuration, high-frequency power is supplied between the electrode group 3 and the substrate 4, and at the same time, a processing gas is introduced from the gas inlet 5 to form plasma on the substrate 4, and the surface of the substrate 4 is processed. Is done. At this time, since the flanges 7 and 8 are formed before and after the traveling direction of the substrate 4, the plasma is sufficiently held on the surface of the substrate 4, so that the surface treatment of the substrate 4 can be sufficiently performed. Is.

  In the first embodiment of the present invention, the electrode group 3 includes a plurality of parallelogram electrodes 30 as shown in FIGS. 6A and 6B arranged perpendicular to the traveling direction of the substrate 4. It is what is done. The parallelogram electrode 30 has a pair of parallel sides 30 a and 30 b extending perpendicular to the traveling direction of the substrate 4, and inclined sides 30 c and 30 d inclined with respect to the traveling direction of the substrate 4. . The parallelogram electrode 30 includes an electrode plate 31 made of a conductive material and an insulating portion 32 made of an insulating material surrounded by the electrode plate 31. In this embodiment, the thickness dp of the electrode plate 31 is in the range of 10 to 100 μm, and the thickness di of the insulating part 32 on the electrode plate 31 is in the range of 10 μm to 10 mm. is there. The acute angle θ formed by the parallel sides 30a, 30b and the inclined sides 30c, 30d is preferably 45 ° or more and less than 90 °.

  The electrode unit 2 according to the first embodiment of the present invention is as shown in FIG. 2, and a plurality of parallelogram electrodes 30 (three in this embodiment) are arranged perpendicular to the traveling direction of the substrate 4 (vertical direction). The gas inlet 5 is formed at a position away from the electrode group 3 by a predetermined distance (particularly on the upstream side in the traveling direction of the substrate 4). As described above, in the first embodiment, the parallelogram electrode 30 is disposed in contact with the inclined side in the vertical direction, and the gas introduction port 5 has a predetermined distance from the electrode group 3. 3 is formed on the upstream side.

  An electrode portion 2A according to Embodiment 2 of the present invention is, for example, as shown in FIG. 3, and is characterized in that the parallelogram electrodes 30 arranged in the vertical direction are arranged at a predetermined interval. Is. In the second embodiment, an example in which the gas introduction port 5 is formed so as to be in contact with the parallelogram electrode 30 is disclosed. The predetermined interval is preferably smaller than the length of the inclined sides 30c, 30d of the parallelogram electrode 30 in the vertical direction.

  The electrode portion 2B according to the third embodiment of the present invention is, for example, as shown in FIG. 4, and the parallelogram electrodes 30 are arranged in the vertical direction to form the first group 30A, and further in the traveling direction of the substrate 4. The electrode group 3B is formed by connecting the second group 30B in which the parallelogram electrodes 30 are arranged in the vertical direction. In the third embodiment, the second group 30B is arranged such that the joint portion of the parallelogram electrodes 30 of the first group 30A is the central portion of the parallelogram electrodes 30 of the second group 30B. It is what.

  An electrode portion 2C according to the fourth embodiment of the present invention is, for example, as shown in FIG. 5 and, like the third embodiment described above, the parallelogram electrodes 30 are arranged in the vertical direction to form the first group 30A. Further, the electrode group 3C is formed by connecting the second group 30B in which the parallelogram electrodes 30 are vertically arranged in the traveling direction of the substrate 4. The fourth embodiment is different from the third embodiment in that the first group 30A and the second group 30B are connected in the same manner in the traveling direction of the substrate 4.

  As described above, according to the electrode unit according to the embodiment of the present invention, an optimum electrode group is selected and used based on the size, thickness, and property of the substrate 4 and the property of the processing gas. It is something that can be done.

  The plasma processing apparatus 1A according to the fifth embodiment of the present invention shown in FIG. 7 is different from the plasma processing apparatus 1 according to the first embodiment shown in FIG. It extends along the said board | substrate 4 before and behind the advancing direction of the board | substrate 4 from the direction both sides.

  Furthermore, the flange portion 7A located on the upstream side in the traveling direction of the substrate 4 has an effect of preventing air from being caught on the substrate 4, and the flange portion 8A located further on the downstream side stabilizes the reaction atmosphere after the treatment. Thus, the effect of improving the process gas confinement effect is achieved.

  In the fifth embodiment, since the flange portions 7A and 8A extend along the moving direction of the substrate 4, the substrate 4 can be moved back and forth with respect to the electrode portion 2 for processing. is there.

  In the plasma processing apparatus 1B according to the sixth embodiment of the present invention shown in FIG. 8, the substrate 4A has a cylindrical shape whose side peripheral surface faces the electrode portion 2, and the plasma processing apparatus 1B has the cylindrical substrate 4A. The side peripheral surface is processed, or the surface of the tape-like object to be processed moving on the side peripheral surface of the cylindrical roller 4A is continuously subjected to plasma processing. As described above, the plasma processing apparatus 1B according to the fifth embodiment is used to perform plasma processing on the surface of the electrode group 3 of the electrode unit 2 that moves in a circular arc shape on the front surface. For this reason, the flange portions 7B and 8B according to the fifth embodiment of the present invention extend from both ends of the electrode portion 2 in the front-rear direction of the substrate 4A along the arc shape of the substrate 4A. . Accordingly, it is possible to prevent entrainment of air at the flange portion 7B on the front side in the rotation direction of the substrate 4A, and to achieve stabilization of the reaction atmosphere after the treatment at the flange portion 8B on the downstream side in the rotation direction. .

    The plasma processing apparatus 1C according to the seventh embodiment of the present invention shown in FIG. 9 is characterized in that a counter electrode portion 9 formed of a metal mesh is provided so as to bridge the flange portions 7 and 8. The counter electrode portion 9 is grounded, has a polarity opposite to that of the electrode group 3, and generates plasma between the electrode group 3 and the counter electrode portion 9. Since radicals generated by this plasma can reach the surface of the substrate 4, surface treatment of the substrate 4 can be performed. This is because the substrate 4 is made of a conductive material and cannot be applied to the polarity opposite to the polarity of the electrode group 3, and there is a means for applying the opposite polarity to the substrate 4 below the substrate. This is effective when the substrate 4 is thick and the substrate surface potential is not sufficient.

DESCRIPTION OF SYMBOLS 1,1B, 1C Plasma processing apparatus 2,2a, 2B, 2C Electrode part 3,3A, 3B, 3C Electrode group 4 Substrate 5 Gas inlet 6 Power supply 7,8 Gutter part 9 Opposite electrode part 30 Parallelogram electrode 30a, 30b Parallel side 30c, 30d Inclined side

Claims (11)

In the plasma processing apparatus comprising one of the electrodes provided to generate plasma on the substrate to be processed and including an electrode portion disposed to face the substrate,
The electrode part is
A plurality of parallelogrammic electrodes having a pair of parallel sides positioned perpendicular to the traveling direction of the substrate and a pair of inclined sides inclined with respect to the traveling direction of the substrate;
A gas inlet formed upstream of the substrate in the traveling direction and parallel to the parallel sides of the parallelogram electrodes;
A plasma processing apparatus, comprising: a collar portion positioned on both sides of the electrode portion in the front and rear direction of the substrate, and holding a gas discharged from the gas inlet on the substrate.   The plasma processing apparatus according to claim 1, wherein the parallelogram electrodes constitute a plurality of electrode groups arranged perpendicular to the traveling direction of the substrate.   The plasma processing apparatus according to claim 2, wherein a plurality of the electrode groups are arranged along a traveling direction of the substrate.   The plasma processing apparatus according to claim 1, wherein the gas introduction port is disposed at a predetermined interval from the parallelogram electrode.   The plasma processing apparatus according to claim 1, wherein the gas inlet is disposed in contact with the parallelogram electrode.   2. The parallelogram electrode is configured by an electrode plate made of a conductive material and an insulating material made of an inorganic insulator or an organic insulator surrounded by the electrode plate. The plasma processing apparatus as described in any one of -6.   7. The plasma processing apparatus according to claim 6, wherein the thickness of the electrode plate is in a range of 10 to 100 [mu] m, and the thickness of the insulator on the electrode plate is in a range of 10 [mu] m to 10 mm.   The plasma processing apparatus according to claim 1, wherein the flange extends from both ends of the electrode portion in the front and rear directions of the substrate toward the substrate.   The plasma processing apparatus according to claim 1, wherein the flange portion extends along the substrate from both front and rear ends of the electrode portion in the substrate traveling direction.   The said board | substrate is formed in the cylindrical shape which a side surface opposes with respect to the said electrode part, The said collar part is extended from the said electrode part along the surrounding surface of a cylindrical board | substrate. 8. The plasma processing apparatus according to any one of 7.   9. The plasma processing apparatus according to claim 8, wherein a metal mesh is disposed at the front ends of the flanges on both sides, and the metal mesh is grounded and applied with a polarity opposite to that of the electrode unit.

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