JP2014232826A - Light emitting device - Google Patents
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- JP2014232826A JP2014232826A JP2013113613A JP2013113613A JP2014232826A JP 2014232826 A JP2014232826 A JP 2014232826A JP 2013113613 A JP2013113613 A JP 2013113613A JP 2013113613 A JP2013113613 A JP 2013113613A JP 2014232826 A JP2014232826 A JP 2014232826A
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- 239000000843 powder Substances 0.000 claims abstract description 76
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 8
- 229920005989 resin Polymers 0.000 claims abstract description 8
- 150000004767 nitrides Chemical group 0.000 claims description 19
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052693 Europium Inorganic materials 0.000 claims description 8
- 239000002223 garnet Substances 0.000 claims description 8
- -1 lutetium aluminum Chemical group 0.000 claims description 8
- 238000000695 excitation spectrum Methods 0.000 claims description 6
- 239000002096 quantum dot Substances 0.000 claims description 4
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 238000009877 rendering Methods 0.000 abstract description 16
- 230000003287 optical effect Effects 0.000 abstract 7
- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 230000016776 visual perception Effects 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48111—Disposition the wire connector extending above another semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
Description
本発明は発光デバイスに関し、特に白色光の光効率及び演色性を向上させられる発光デバイスに関する。 The present invention relates to a light emitting device, and more particularly to a light emitting device capable of improving the light efficiency and color rendering of white light.
グリーンエネルギーへの転換が提唱される今日、世界の先進各国では省エネと環境保護を意識し、白色発光ダイオードを従来の照明設備の代用とする動きが広がっている。
発光ダイオードは、体積が小さく(設備の小型化に応用可能)、消費電力量が低く(消費電力量は一般の電球の八分の一から十分の一で、蛍光灯の二分の一)、寿命が長く(10万時間以上に達する)、発熱量が低く(熱放射が低い)、反応速度が速い(高周波操作が可能)という長所を備える。
そのため、白熱電球がこれまで克服できなかった多くの問題を解決することができる。
そして、節電と環境に優しいため、白色発光ダイオードは二十一世紀の照明用光源といわれ、また「グリーン照明光源」と讃えられている。
Today, with the advocacy of conversion to green energy, advanced countries around the world are conscious of energy saving and environmental protection, and white light-emitting diodes are being used instead of conventional lighting equipment.
Light-emitting diodes have a small volume (applicable to downsizing equipment), low power consumption (power consumption is one-eighth to one-tenth that of ordinary light bulbs, and half that of fluorescent lamps) Has the advantages of being long (up to 100,000 hours or more), low calorific value (low thermal radiation), and fast reaction speed (high frequency operation is possible).
Therefore, many problems that the incandescent light bulb could not overcome can be solved.
And because it is energy-saving and environmentally friendly, white light-emitting diodes are said to be the light source for the 21st century, and are regarded as “green illumination light sources”.
中でも、青色発光ダイオード(light emitting-diodes;LEDs)に、黄色蛍光粉を組合せて白色光を発する技術は、比較的成熟した技術である。
1996年、日亜化学(Nichia Chemical)は、黄色光を発するイットリウムアルミニウムガーネット(Y3A15O12：Ce，YAG:Ce)蛍光粉に、窒化インジウムガリウム(InGaN)青色発光ダイオードを組合せ、高効率の白色光源とすることに成功した。
Among them, a technology that emits white light by combining yellow fluorescent powder with blue light emitting diodes (LEDs) is a relatively mature technology.
In 1996, Nichia Chemical combined yttrium aluminum garnet (Y 3 A1 5 O 12 : Ce, YAG: Ce) fluorescent powder emitting yellow light with indium gallium nitride (InGaN) blue light-emitting diodes. We succeeded in making it an efficient white light source
しかし、白色光生成の過程において、青色光の一部は混色しなければ白色光を得ることはできない。
そのため、色温度(Color temperature)が高くなるという問題があった。
特に、高電流操作時には、色温度が上がるという問題は、非常に深刻である。
However, in the process of generating white light, white light cannot be obtained unless a part of blue light is mixed.
Therefore, there has been a problem that the color temperature becomes high.
In particular, the problem that the color temperature rises during a high current operation is very serious.
また高温環境下では、YAG蛍光粉の発光効率は、温度上昇に従い低下する。
しかも、その白色光スペクトルはほとんど赤色成分を含まないため、その演色性(Color Rendering Index)は、50-60に過ぎない。
よって、一般の照明用光源とする時に、演色性不足の問題があった。
本発明は、従来の発光ダイオードの上記した欠点に鑑みてなされたものである。
In a high temperature environment, the luminous efficiency of the YAG fluorescent powder decreases as the temperature increases.
Moreover, since the white light spectrum contains almost no red component, its color rendering index (Color Rendering Index) is only 50-60.
Therefore, there is a problem of insufficient color rendering when a general illumination light source is used.
The present invention has been made in view of the above-described drawbacks of conventional light emitting diodes.
本発明が解決しようとする課題は、白色光の光効率及び演色性を向上させられる発光デバイスを提供することである。 The problem to be solved by the present invention is to provide a light emitting device capable of improving the light efficiency and color rendering of white light.
上記課題を解決するため、本発明は下記の発光デバイスを提供する。
発光デバイスは、少なくとも一個以上の青色光チップ、少なくとも一個以上の緑色光チップ、少なくとも一個以上の赤色光チップ、及び該青色光チップ、該緑色光チップ、該赤色光チップ上に接着して覆う蛍光層を備え、
該蛍光層は、少なくとも一種以上の黄色蛍光パウダー及び赤色蛍光パウダーに、透明樹脂材を加え、均一に混合して構成し、
これにより、光源の少なくとも一部分を吸収し、吸收光の波長と異なる、或いは相同の波長の光源を発し、
こうして、白色光の光効率と演色性の向上を達成することができる。
In order to solve the above problems, the present invention provides the following light emitting device.
The light emitting device includes at least one or more blue light chips, at least one or more green light chips, at least one or more red light chips, and the blue light chip, the green light chip, or the fluorescent light adhered and covered on the red light chip. With layers,
The fluorescent layer is formed by adding a transparent resin material to at least one kind of yellow fluorescent powder and red fluorescent powder, and mixing them uniformly.
This absorbs at least a portion of the light source and emits a light source with a wavelength different from or similar to the wavelength of the absorbed light,
Thus, it is possible to improve the light efficiency and color rendering of white light.
本発明の発光デバイスは、白色光の光効率及び演色性を向上させることができる。 The light emitting device of the present invention can improve the light efficiency and color rendering of white light.
以下に図面を参照しながら本発明を実施するための最良の形態について詳細に説明する。 The best mode for carrying out the present invention will be described in detail below with reference to the drawings.
本発明の発光デバイス10は、図１に示すように、少なくとも一個以上の青色光チップ11、少なくとも一個以上の緑色光チップ12、少なくとも一個以上の赤色光チップ13、蛍光層14を備える。 As shown in FIG. 1, the light emitting device 10 of the present invention includes at least one or more blue light chips 11, at least one or more green light chips 12, at least one or more red light chips 13, and a fluorescent layer 14.
青色光チップ11は、青色発光の光源で、その波長は、420nm〜480nmである。
緑色光チップ12は、緑色光発光の光源で、その波長は、490nm〜560nmである。
赤色光チップ13は、赤色光発光の光源で、その波長は、590nm〜700nmである。
蛍光層14は、青色光チップ11、緑色光チップ12、赤色光チップ13の上に接着して覆う。
蛍光層14は、少なくとも一種以上の黄色蛍光パウダー及び赤色蛍光パウダーに、透明樹脂材を加え、均一に混合して構成する。
The blue light chip 11 is a blue light source and has a wavelength of 420 nm to 480 nm.
The green light chip 12 is a light source that emits green light and has a wavelength of 490 nm to 560 nm.
The red light chip 13 is a light source that emits red light and has a wavelength of 590 nm to 700 nm.
The fluorescent layer 14 is adhered and covered on the blue light chip 11, the green light chip 12, and the red light chip 13.
The fluorescent layer 14 is configured by adding a transparent resin material to at least one kind of yellow fluorescent powder and red fluorescent powder and mixing them uniformly.
透明樹脂材は、100重量パーセントで、少なくとも一種以上の黄色蛍光パウダーは、0.1~60重量パーセントで、赤色蛍光パウダーは、0.1~20重量パーセントで、黄色蛍光パウダーは、波長が510nm〜590nmの励起スペクトルピーク値を備える。 The transparent resin material is 100 weight percent, at least one or more yellow fluorescent powder is 0.1 to 60 weight percent, the red fluorescent powder is 0.1 to 20 weight percent, and the yellow fluorescent powder is excited with a wavelength of 510 nm to 590 nm With spectral peak value.
黄色蛍光パウダーは、ルテチウムアルミニウムガーネット(lutetium aluminum garnet，LuAG)蛍光パウダーで、Lu3Al5O12：Ce3+、或いは異なる励起スペクトルピーク値のルテチウムアルミニウムガーネット蛍光パウダーなどを混合して構成する。 The yellow fluorescent powder is a lutetium aluminum garnet (LuAG) fluorescent powder, which is composed of Lu 3 Al 5 O 12 : Ce 3+ or lutetium aluminum garnet fluorescent powder having different excitation spectrum peak values.
黄色蛍光パウダーは、ケイ酸塩(Silicate)蛍光パウダーで、(Sr，Ca)2SiO4：Eu2+，Ba2SiO4：Eu2+，SrGa2S4，ZnS：Cu+，ZnS：Au+，ZnS：Al3+，(Zn，Cd)S：Ag+或いはCaS：Ce3+或いは量子ドット材料(セレン化カドミウム/硫化亜鉛(CdSe/ZnS)のナノレベル微粒子を含む)、或いは上記した異なる励起スペクトルピーク値のケイ酸塩蛍光パウダーの組合せなどから選択する。 Yellow fluorescent powder is a silicate (Silicate) fluorescent powder, (Sr, Ca) 2SiO 4 : Eu 2+, Ba 2 SiO 4: Eu 2+, SrGa 2 S 4, ZnS: Cu +, ZnS: Au + , ZnS: Al 3+ , (Zn, Cd) S: Ag + or CaS: Ce 3+ or quantum dot material (including nano-level fine particles of cadmium selenide / zinc sulfide (CdSe / ZnS)) or different as described above Select from a combination of excitation spectrum peak value and silicate fluorescent powder.
赤色蛍光パウダーは、波長が600nm〜660nmの励起スペクトルピーク値を備える。
赤色蛍光パウダーは、窒化物(Nitride)蛍光パウダーで、(Ba，Ca，Sr，Eu) 2Si5N8-2xOxCx或いはAE2Si5N8：REなどから選択する。
その内、AEは、アルカリ土類元素(alkaline earth element)で、REは、レアアース元素(rare earth element)で、Ba2Si5N8：Eu2+、Ca2Si5N8：Eu2+或いはSr2Si5N8：Eu2+、或いは量子ドット材料(セレン化カドミウム/硫化亜鉛(CdSe/ZnS)のナノレベル微粒子を含む)、或いは異なる励起スペクトルピーク値の窒化物蛍光パウダーなどを混合して構成する。
The red fluorescent powder has an excitation spectrum peak value with a wavelength of 600 nm to 660 nm.
The red fluorescent powder is a nitride fluorescent powder, and is selected from (Ba, Ca, Sr, Eu) 2 Si 5 N 8-2x O x C x or AE 2 Si 5 N 8 : RE.
Among them, AE is an alkaline earth element, RE is a rare earth element, Ba 2 Si 5 N 8 : Eu 2+ , Ca 2 Si 5 N 8 : Eu 2+ Or Sr 2 Si 5 N 8 : Eu 2+ , or quantum dot materials (including nano-level fine particles of cadmium selenide / zinc sulfide (CdSe / ZnS)), or nitride fluorescent powder with different excitation spectrum peak values And configure.
蛍光層14は、光源の少なくとも一部分を吸収し、吸收光の波長と異なる、或いは相同の波長の光源を発する。
これにより、白色光の光効率と演色性の向上を達成する。
The fluorescent layer 14 absorbs at least a part of the light source and emits a light source having a wavelength different from or similar to the wavelength of the absorbed light.
Thereby, the improvement of the light efficiency and color rendering of white light is achieved.
下表１は、一般の発光デバイスと本発明発光デバイスにおいて測定された光効率、色温度、演色性の比較表である。 Table 1 below is a comparison table of light efficiency, color temperature, and color rendering properties measured in a general light emitting device and the light emitting device of the present invention.
上記表により明らかなように、比較例1及び比較例3は、青色光チップを使用し、黄色蛍光粉(それぞれルテチウムアルミニウムガーネット蛍光パウダー或いはケイ酸塩蛍光パウダー)を組み合わせる。
それが励起する白色光源は、光効率が高く、色温度も高いが、演色性が低いため、照らされた物体が表現する色彩は不自然になってしまう。
これでは、人の眼の視覚感知に影響を及ぼし、照らされた物体が表現すべきリアルな色彩を適当に表現することはできない。
As is apparent from the above table, Comparative Example 1 and Comparative Example 3 use a blue light chip and combine yellow fluorescent powder (lutetium aluminum garnet fluorescent powder or silicate fluorescent powder, respectively).
The white light source excited by the light source has high light efficiency and high color temperature, but the color rendering property is low, so that the color expressed by the illuminated object becomes unnatural.
This affects the visual perception of the human eye and cannot properly represent the realistic colors that the illuminated object should represent.
赤色蛍光パウダーは、窒化物(Nitride)蛍光パウダーで、(Ba，Ca，Sr，Eu)などである。
比較例2及び比較例4は同様に、青色光チップを使用し、黄色蛍光粉(それぞれルテチウムアルミニウムガーネット蛍光パウダー或いはケイ酸塩蛍光パウダー)及び赤色蛍光粉(窒化物蛍光パウダー)を組み合わせる。
それが、励起する白色光源は、演色性を向上させることはできるが、光効率が大幅に低下し、色温度も依然として高い。
The red fluorescent powder is a nitride fluorescent powder such as (Ba, Ca, Sr, Eu).
Similarly, Comparative Example 2 and Comparative Example 4 use a blue light chip and combine yellow fluorescent powder (lutetium aluminum garnet fluorescent powder or silicate fluorescent powder, respectively) and red fluorescent powder (nitride fluorescent powder).
However, the exciting white light source can improve the color rendering, but the light efficiency is greatly reduced and the color temperature is still high.
赤色蛍光パウダーは、窒化物(Nitride)蛍光パウダーで、(Ba，Ca，Sr，Eu)などから選択する。
比較例5は、青色光チップ、緑色光チップ、赤色光チップを使用し、透明樹脂材だけを組み合わせるが、その光効率は低く、しかも色温度及び演色性は共に良くない。
The red fluorescent powder is a nitride fluorescent powder, and is selected from (Ba, Ca, Sr, Eu) and the like.
In Comparative Example 5, a blue light chip, a green light chip, and a red light chip are used and only a transparent resin material is combined. However, the light efficiency is low, and the color temperature and the color rendering property are not good.
赤色蛍光パウダーは、窒化物(Nitride)蛍光パウダーで、(Ba，Ca，Sr，Eu) などから選択する。
比較例6、7、8は、青色光チップ、緑色光チップ、赤色光チップを使用するが、透明樹脂材は、単一の蛍光粉のみを組み合わせる。
その光効率は低く、しかも演色性が良くない。
Red fluorescent powder is nitride fluorescent powder (Ba, Ca, Sr, Eu) Choose from.
Comparative Examples 6, 7, and 8 use a blue light chip, a green light chip, and a red light chip, but the transparent resin material combines only a single fluorescent powder.
Its light efficiency is low and color rendering is not good.
赤色蛍光パウダーは、窒化物(Nitride)蛍光パウダーで、(Ba，Ca，Sr，Eu)などから選択する。 The red fluorescent powder is a nitride fluorescent powder, and is selected from (Ba, Ca, Sr, Eu) and the like.
実施例1〜10は、本発明発光デバイスが使用する青色光チップ、緑色光チップ、赤色光チップは、黄色蛍光粉(それぞれルテチウムアルミニウムガーネット蛍光パウダー或いはケイ酸塩光パウダー)及び赤色蛍光粉(窒化物蛍光パウダー)を組み合わせる。
その光効率はすべて85 lm/W以上を維持し、最良のものは93lm/Wである。
色温度の平均は、3000K以下で、演色性も80以上を維持し、最良のものは96である。
中でも、実施例3及び実施例8が、最適実施例である。
In Examples 1 to 10, the blue light chip, the green light chip, and the red light chip used by the light-emitting device of the present invention are yellow fluorescent powder (lutetium aluminum garnet fluorescent powder or silicate light powder, respectively) and red fluorescent powder (nitriding nitride). Product fluorescent powder).
Their light efficiencies all remain above 85 lm / W, the best being 93 lm / W.
The average color temperature is 3000 K or less, the color rendering property is maintained at 80 or more, and the best is 96.
Among them, Example 3 and Example 8 are optimum examples.
赤色蛍光パウダーは、窒化物(Nitride)蛍光パウダーで、(Ba，Ca，Sr，Eu)などから選択する。 The red fluorescent powder is a nitride fluorescent powder, and is selected from (Ba, Ca, Sr, Eu) and the like.
実施例3のケイ酸塩蛍光パウダーの含有量は、8重量パーセントが好ましく、窒化物蛍光パウダーの含有量は、0.9重量パーセントが好ましい。
実施例8のルテチウムアルミニウムガーネット蛍光パウダーの含有量は、12重量パーセントが好ましく、窒化物蛍光パウダーの含有量は、0.3重量パーセントが好ましい。
The content of the silicate fluorescent powder of Example 3 is preferably 8 weight percent, and the content of the nitride fluorescent powder is preferably 0.9 weight percent.
The content of the lutetium aluminum garnet fluorescent powder of Example 8 is preferably 12 weight percent, and the content of the nitride fluorescent powder is preferably 0.3 weight percent.
赤色蛍光パウダーは、窒化物(Nitride)蛍光パウダーで、(Ba，Ca，Sr，Eu)などから選択することができる。 The red fluorescent powder is a nitride fluorescent powder, and can be selected from (Ba, Ca, Sr, Eu) and the like.
上記の本発明名称と内容は、本発明技術内容の説明に用いたのみで、本発明を限定するものではない。本発明の精神に基づく等価応用或いは部品（構造）の転換、置換、数量の増減はすべて、本発明の保護範囲に含むものとする。 The above-mentioned names and contents of the present invention are only used for explaining the technical contents of the present invention, and do not limit the present invention. All equivalent applications or parts (structures) conversion, replacement and increase / decrease in quantity based on the spirit of the present invention shall be included in the protection scope of the present invention.
本発明は特許の要件である新規性を備え、従来の同類製品に比べ十分な進歩を有し、実用性が高く、社会のニーズに合致しており、産業上の利用価値は非常に大きい。 The present invention has the novelty that is a requirement of patents, has sufficiently advanced as compared with conventional similar products, has high practicality, meets the needs of society, and has a great industrial utility value.
10 発光デバイス
11 青色光チップ
12 赤色光チップ
13 緑色光チップ
14 蛍光層
10 Light emitting devices
11 Blue light chip
12 Red light chip
13 Green light chip
14 Fluorescent layer
Claims (12)
前記少なくとも一個以上の青色光チップは、420nm〜480nm波長の青色光を発し、
前記少なくとも一個以上の緑色光チップは、490nm〜560nm波長の緑色光を発し、
前記少なくとも一個以上の赤色光チップは、590nm〜700nm波長の赤色光を発し、
前記蛍光層は、少なくとも一種の黄色蛍光パウダー及び赤色蛍光パウダーに、透明樹脂材を加え、均一に混合して構成し、前記蛍光層は、青色光チップ、緑色光チップ、赤色光チップ上に接着して覆い、
前記透明樹脂材は、100重量パーセントで、前記黄色蛍光パウダーは、0.1~60重量パーセントで、前記赤色蛍光パウダーは、0.1~20重量パーセントで、
前記黄色蛍光パウダーは、波長が510nm〜590nmの励起スペクトルピーク値を備え、
前記赤色蛍光パウダーは、波長が600nm〜660nmの励起スペクトルピーク値を備えることを特徴とする発光デバイス。 The light emitting device includes at least one blue light chip, at least one green light chip, at least one red light chip, and a fluorescent layer.
The at least one blue light chip emits blue light having a wavelength of 420 nm to 480 nm;
The at least one green light chip emits green light having a wavelength of 490 nm to 560 nm;
The at least one red light chip emits red light having a wavelength of 590 nm to 700 nm;
The fluorescent layer is formed by adding a transparent resin material to at least one kind of yellow fluorescent powder and red fluorescent powder and mixing them uniformly, and the fluorescent layer is bonded onto a blue light chip, a green light chip, and a red light chip. Cover
The transparent resin material is 100 weight percent, the yellow fluorescent powder is 0.1 to 60 weight percent, the red fluorescent powder is 0.1 to 20 weight percent,
The yellow fluorescent powder has an excitation spectrum peak value with a wavelength of 510 nm to 590 nm,
The red fluorescent powder has an excitation spectrum peak value having a wavelength of 600 nm to 660 nm.
AEは、アルカリ土類元素(alkaline
earth element)で、
REは、レアアース元素(rare earth element)或いは量子ドット材料或いは上記の組合せであることを特徴とする請求項６に記載の発光デバイス。 The nitride fluorescent powder is selected from (Ba, Ca, Sr, Eu) 2 Si 5 N 8-2x O x C x or AE 2 Si 5 N 8 : RE;
AE is an alkaline earth element (alkaline
earth element)
7. The light emitting device according to claim 6, wherein RE is a rare earth element, a quantum dot material, or a combination of the above.
前記窒化物蛍光パウダーの含有量は、0.3重量パーセントが好ましいことを特徴とする請求項１〜３の任意の一項に記載の発光デバイス。 The content of the lutetium aluminum garnet fluorescent powder is preferably 12 weight percent,
The light emitting device according to any one of claims 1 to 3, wherein the content of the nitride fluorescent powder is preferably 0.3 percent by weight.
前記窒化物蛍光パウダーの含有量は、0.9重量パーセントが好ましいことを特徴とする請求項１或いは４或いは５に記載の発光デバイス。 The content of the silicate fluorescent powder is preferably 8 weight percent,
The light emitting device according to claim 1, 4, or 5, wherein the content of the nitride fluorescent powder is preferably 0.9 weight percent.
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