JP2014216590A - Vapor-phase growth apparatus - Google Patents

Abstract

A group III nitride semiconductor gas comprising a light-transmitting ceramic plate between a substrate mounting position and a heater and configured to supply an inert gas to a gap between the heater and the light-transmitting ceramic plate. In the phase growth apparatus, a vapor phase growth apparatus capable of recovering ammonia contained in the exhaust gas discharged from the vapor phase growth apparatus in a high yield is provided. In the above-described vapor phase growth apparatus, an inert gas discharge portion discharged from a gap between a heater and a light-transmitting ceramic plate is provided separately from a reaction gas discharge portion. Preferably, an inert gas supply unit is provided at the center, and an inert gas discharge unit is provided at the periphery. [Selection] Figure 2

Description

  The present invention relates to a group III nitride semiconductor vapor phase growth apparatus, and more specifically, includes a light-transmitting ceramic plate between a substrate mounting position and a heater, and a gap between the heater and the light-transmitting ceramic plate. The present invention relates to a group III nitride semiconductor vapor phase growth apparatus having a configuration for supplying an inert gas.

Group III nitride semiconductors are widely used as materials for blue or ultraviolet LEDs or blue or ultraviolet laser diodes. A method for growing a crystal film of a group III nitride semiconductor on a substrate such as silicon (Si), sapphire (Al ₂ O ₃ ), or gallium nitride (GaN) includes chemical vapor deposition (CVD). There is a method, and a CVD method involving substrate heating is known as a thermal CVD method or the like. In recent years, vapor phase growth performed by heating a substrate under high temperature conditions (for example, 1000 ° C. or higher) is increasing, and vapor phase growth of a group III nitride semiconductor is one of them. The formation of the group III nitride semiconductor film is, for example, a substrate heated to a high temperature of about 1000 ° C. using an organometallic gas such as trimethylgallium, trimethylindium, or trimethylaluminum as a group III metal source and ammonia as a nitrogen source. This is performed by a thermal CVD method in which a crystal film is vapor-grown.

  The structure of the group III nitride semiconductor vapor phase growth apparatus includes a susceptor for placing a substrate, a heater for heating the substrate, and a light-transmitting ceramic plate between the heater and the placement position of the substrate. Is provided (see Patent Document 1). By using such a light-transmitting ceramic plate, it is possible not only to protect the heater from high temperature corrosive gas (such as ammonia), but also to protect the heater, and the light-transmitting ceramic plate is protected from the heater. Since the emitted heat rays are transmitted, the substrate can be efficiently heated. In particular, like the vapor phase growth apparatus described in Patent Document 1, by providing means for supplying an inert gas to the heater side with a light-transmitting ceramic plate interposed therebetween, the periphery of the heater is filled with the inert gas. Therefore, deterioration of the heater can be prevented.

On the other hand, ammonia, which is widely used as a nitrogen source for group III nitride semiconductors, has a low decomposition efficiency, and therefore is required in an extremely large amount compared to a gas such as group III trimethylgallium. The ammonia used in the semiconductor manufacturing process is high-purity ammonia obtained by distilling or rectifying industrial ammonia, or expensive ammonia obtained by further purifying it. Moreover, most of them are not used in the vapor phase growth reaction, and are discarded in large quantities without being reacted. Therefore, it is desirable that the exhaust gas containing ammonia discharged from the manufacturing process of the group III nitride semiconductor recovers the ammonia contained in the exhaust gas and is reused.
JP 2007-96280 A JP 2008-7378 A JP 2000-317246 A

  In the vapor phase growth apparatus as described above, the raw material gas used for the vapor phase growth is discharged from the reaction gas discharge portion as an exhaust gas in a state in which most of the ammonia is unreacted. The inert gas supplied from the means for supplying the inert gas to the heater side is also discharged from the reaction gas discharge unit together with the reaction gas. Such a vapor phase growth apparatus (a vapor phase growth apparatus having a configuration in which a reaction gas after being used for a vapor phase growth reaction and an inert gas after being used for protecting a heater are mixed and discharged) However, in order to recover ammonia contained in the exhaust gas, there has been a problem that the inert gas or the like contained in a large amount in the exhaust gas has to be removed, resulting in a reduction in efficiency or yield during ammonia recovery.

  The inventors of the present invention have intensively studied to solve such problems. As a result, a light-transmitting ceramic plate is provided between the substrate mounting position and the heater, and a gap between the heater and the light-transmitting ceramic plate is provided. In the group III nitride semiconductor vapor phase growth apparatus having a configuration for supplying an inert gas to the substrate, the above-described problem can be solved by providing the inert gas discharge portion separately from the reaction gas discharge portion. And reached the vapor phase growth apparatus of the present invention.

  That is, the present invention provides a group III nitride semiconductor comprising a light-transmitting ceramic plate between a substrate mounting position and a heater, and a structure for supplying an inert gas to a gap between the heater and the light-transmitting ceramic plate. In this vapor phase growth apparatus, the inert gas discharge section is provided separately from the reaction gas discharge section.

  In the vapor phase growth apparatus of the present invention, the inert gas discharge portion supplied to the gap between the heater and the light-transmitting ceramic plate is provided separately from the reaction gas discharge portion. The ammonia concentration in the exhaust gas can be prevented from decreasing due to the supply of ammonia, and ammonia can be recovered efficiently and with high yield.

  The present invention relates to a group III nitride semiconductor comprising a light-transmitting ceramic plate between a substrate mounting position and a heater and configured to supply an inert gas to a gap between the heater and the light-transmitting ceramic plate. Applied to vapor phase growth equipment. Hereinafter, although this invention is demonstrated in detail based on FIGS. 1-8, this invention is not limited by these.

  FIG. 1 is a configuration diagram showing an example of a vapor phase growth system (including a gas phase growth apparatus, a source gas supply device and an ammonia recovery device) in the present invention, and FIG. FIG. 3 is a vertical cross-sectional configuration diagram showing an example of a growth apparatus, FIG. 3 is a vertical cross-sectional configuration diagram showing an example of a vapor phase growth apparatus other than FIG. 2 of the present invention, and FIG. FIG. 5 is a vertical cross-sectional configuration diagram illustrating an example of a vapor phase growth apparatus other than 3, and FIG. 5 is a vertical cross-sectional configuration diagram illustrating an example of a vapor phase growth apparatus other than FIGS. 6 is a cross-sectional view taken along the line AA in FIG. 2, and FIG. 7 is a cross-sectional view taken along the line A'-A 'in FIG. FIG. 8 is a configuration diagram showing an example of an ammonia recovery device used in the vapor phase growth system according to the present invention.

  The vapor phase growth apparatus of the present invention is a group III nitride semiconductor vapor phase growth apparatus, and is particularly suitable as a gallium nitride semiconductor vapor phase growth apparatus. The vapor phase growth system according to the present invention comprises, as shown in FIG. 1, for example, a source of each raw material, a purification device for each raw material gas, a vapor phase growth device, and the like. A physical semiconductor is vapor-phase grown. In the vapor phase growth apparatus of the present invention, it is preferable to use ammonia as a nitrogen source. In the vapor phase growth apparatus of the present invention, an organometallic compound (an organometallic compound selected from trimethylgallium, triethylgallium, trimethylindium, triethylindium, trimethylaluminum, or triethylaluminum) is vaporized as a group III metal source. Can be used.

The vapor phase growth apparatus of the present invention includes, for example, a light transmissive ceramic plate 36 between the substrate mounting position and the heater 28 as shown in FIGS. 2 to 5, and the heater 28 and the light transmissive ceramic plate 36. An inert gas supply part 33 for supplying an inert gas is provided in the gap, and the inert gas discharge part 34 is provided separately from the reaction gas discharge part 32.
The vapor phase growth apparatus of the present invention can be configured to hold a plurality of substrates for the purpose of improving productivity. Each substrate may be held by a substrate holder having a ring shape or a cylindrical shape so that the crystal growth surface of the substrate faces downward, as in the vapor phase growth apparatus shown in FIGS. However, it is not limited to being held downward, and may be held upward or sideways, for example. The present invention is not limited to the vapor phase growth apparatus that supplies the source gas from the central part of the reactor and discharges it from the peripheral part to the outside. For example, the source gas is supplied from one end of the reactor and the reaction is performed. It can also be applied to a vapor phase growth apparatus that discharges the later gas to the outside from the other end.

  The light-transmitting ceramic plate used in the vapor phase growth apparatus of the present invention is provided so as to separate the mounting position of the substrate from the heater that heats the substrate. In addition to the light-transmitting ceramic plate, for example, as shown in FIGS. 2 to 5, the vapor phase growth apparatus of the present invention includes a substrate holder 24 that holds the substrate 41, a heater 28 that heats the substrate 41, and a substrate holder 24. The soaking plate 25 for transferring the heat from the heater 28 to the substrate 41, the susceptor 26 for placing the substrate holder 24, the reaction furnace 30 comprising the susceptor 26 and the susceptor 27 facing each other, and the source gas in the substrate 41 A source gas supply unit 31 for supplying gas, a reaction gas discharge unit 32 for discharging the source gas used for vapor phase growth as a reaction gas, and an inert gas for supplying an inert gas to the gap between the heater 28 and the light-transmitting ceramic plate 36 A gas supply unit 33, an inert gas discharge unit 34 for discharging the inert gas, and the like can be provided.

  In the vapor phase growth apparatus of the present invention, the material, shape, size, and the like of the heater and the light-transmitting ceramic plate are preferably materials, shapes, sizes, etc. as described in Patent Document 1, It is not limited to such material, shape, size, and the like. In addition, it is preferable that the light-transmitting ceramic plate is divided and installed. In the vapor phase growth apparatus of the present invention, the light-transmitting ceramic plate is preferably held or reinforced by a support member, but may not be held or reinforced by the support member. The light-transmitting ceramic plate used in the vapor phase growth apparatus of the present invention is particularly preferably held or reinforced by a support member as described in Patent Document 1, but is preferably held or reinforced by such a support member. It is not limited to reinforcement.

  In the vapor phase growth apparatus of the present invention, for example, in order to prevent the corrosive gas as described above from flowing into the periphery of the heater through a gap between the light transmissive ceramic plates installed separately, the heater and the light transmissive ceramic are provided. An inert gas supply unit that supplies an inert gas to the gap between the plates is provided. In the example of the vapor phase growth apparatus shown in FIGS. 2 to 5, the source gas supply unit 31 and the reaction gas discharge unit 32 are provided on the mounting position side of the substrate 41 with the light-transmitting ceramic plate 36 therebetween, and are inactive. A gas supply unit 33 and an inert gas discharge unit 34 are provided on the heater 28 side with the light-transmitting ceramic plate 36 therebetween, and the heat-insulating plate 29, the light-transmitting ceramic plate 36, and the support members 35A and 35B. A structure surrounding the heater 28 is provided. By providing an inert gas supply section for supplying an inert gas and an inert gas discharge section in the structure surrounding the heater, the structure can be filled with the inert gas.

  Examples of the inert gas include nitrogen gas, helium gas, neon gas, argon gas, krypton gas, xenon gas, and radon gas, and nitrogen gas is usually used frequently. The flow rate of the inert gas is preferably 50 L / min to 300 L / min, but is not limited to such a flow rate. Further, it is desirable that the structure has a highly sealed structure so that a highly corrosive gas used for film formation does not easily enter. The gap between the heater 28 and the light transmissive ceramic plate 36 and the gap between the light transmissive ceramic plate 36 and the susceptor 26 are usually 1 to 20 mm, preferably 3 to 15 mm, and more preferably 5 to 10 mm. If the thickness is 1 to 20 mm, the heater can be protected. When the gap exceeds 20 mm, the effect of the heater is reduced.

In the vapor phase growth apparatus of the present invention, an inert gas supply unit is provided at the center and an inert gas discharge unit is provided at the periphery so that the inert gas can be uniformly distributed inside the structure. However, it is not limited to such a configuration.
In the vapor phase growth apparatus of the present invention, when the inert gas supply unit is provided at the center, for example, as shown in FIGS. 2 and 3, the inert gas supply unit provided around the center support member 35B. For example, as shown in FIGS. 4 and 5, the inert gas supplied from the inert gas supply unit 33 is supplied to the cylindrical center support member 35B. It can also be set as the structure supplied through the provided vent hole 35C toward the outer peripheral side from the cylindrical inner peripheral side. The inert gas supply unit used in the vapor phase growth apparatus of the present invention is preferably a material having excellent heat resistance because it is often provided in the vicinity of the heater, such as carbon, pyrolytic graphite (PG), It is particularly preferable to be composed of a carbon-based material such as glassy carbon (GC), or a ceramic-based material such as boron nitride, silicon carbide, or silicon nitride, but is not limited to such a material.

  In the vapor phase growth apparatus of the present invention, it is preferable that a plurality of inert gas discharge units are provided. When a plurality of inert gas discharge units are provided, for example, as in the vapor phase growth apparatus of FIGS. The inert gas discharge units are preferably provided at regular intervals and equidistant from the inert gas supply unit, but are not limited to being equidistant and equidistant. In addition, when the inert gas supply unit is provided at the center in the vapor phase growth apparatus of the present invention, the inert gas discharge unit is provided around the heater so that the entire heater is protected by the inert gas. However, it is not limited to be provided around the heater.

The reaction gas discharge part of the vapor phase growth apparatus of the present invention is preferably connected to the ammonia recovery apparatus, but may not be connected to the ammonia recovery apparatus. For example, the ammonia recovery device used in the present invention removes the solid compound contained in the exhaust gas by filtering the exhaust gas containing ammonia, hydrogen, nitrogen and a solid compound as in the ammonia recovery device of FIG. After that, it is preferable that the ammonia recovery device recovers ammonia by liquefying ammonia contained in the exhaust gas and separating it from hydrogen and nitrogen by performing a pressure treatment and a cooling process by a heat pump. It is not limited to an apparatus, An ammonia collection | recovery apparatus as described in patent document 2 and patent document 3 may be sufficient.
In the vapor phase growth system of FIG. 1, the exhaust gas containing ammonia, hydrogen, nitrogen, and a solid compound discharged from the group III nitride semiconductor vapor phase growth apparatus 9 is filtered by the filter 10 and included in the exhaust gas. After removing the solid compound, the gas compressor 11 is pressurized, and the heat pump type cooler 12 liquefies ammonia contained in the exhaust gas to separate it from hydrogen and nitrogen, and the ammonia is recovered as a liquid.

  In the ammonia recovery apparatus used in the present invention, the heat pump preferably uses the principle of depriving the exhaust gas of heat of vaporization and cooling the exhaust gas when the refrigerant is evaporated under reduced pressure. For example, in the ammonia recovery apparatus shown in FIG. 8, a heat pump type cooler 12 including a refrigerant liquid feeder 17, an expansion valve 18, a condensing valve 19, a heat exchanger 20, and a liquid ammonia tank 21 is used. In this cooler, the liquid refrigerant sent to the expansion valve 18 by the refrigerant liquid feeder 17 evaporates in the expansion valve 18 and takes heat from the exhaust gas containing ammonia in the heat exchanger 20, and the exhaust gas is cooled. Ammonia liquefies. Thereafter, the gaseous refrigerant is pressurized by the condensing valve 19 to become a liquid and is sent to the refrigerant feeder 17 for circulation.

  Since the ammonia recovery device shown in FIG. 8 cools the exhaust gas by using such a principle, the effect of cooling ammonia is superior to the method of simply exchanging heat between the exhaust gas and the refrigerant. Therefore, even if the ammonia content is about 10 to 40 vol%, such as the exhaust gas discharged from the vapor phase growth apparatus of the present invention, the ammonia is dissolved in water by bubbling the exhaust gas into water in advance. Therefore, it is not necessary to perform an operation for removing hydrogen and nitrogen, or an operation for greatly reducing the content of hydrogen and nitrogen, and ammonia in exhaust gas can be efficiently liquefied. However, if the inert gas discharge part is not provided separately from the reaction gas discharge part, the ammonia content in the exhaust gas is often about 50 to 75%, as described above. Even with an ammonia recovery device, ammonia may not be recovered in a high yield.

  In the ammonia recovery apparatus shown in FIG. 8, after exhaust gas discharged from the vapor phase growth apparatus 9 passes through the filter 10 and is filtered of a metal compound such as gallium nitride that has not been deposited on the substrate, the ammonia is liquefied. In order to make it easy, it is pressurized to 0.5 to 2 MPaG by the gas compressor 11 and cooled to −30 to −60 ° C. in the heat pump cooler 12 described above. In addition, when it pressurizes with the gas compressor 11, some ammonia in waste gas may be liquefied. The liquid ammonia is transferred to the liquid ammonia storage tank 14, and the ammonia remaining as a gas and the hydrogen and nitrogen that are not liquefied pass through the pressure regulator 13 and are sent to the exhaust gas purifier for processing.

  In the vapor phase growth apparatus of the present invention, the ammonia recovered in the ammonia recovery apparatus can be vaporized and mixed with ammonia other than the ammonia, and then the mixed gas can be purified and supplied to the vapor phase growth apparatus. . Specifically, in the vapor phase growth system of FIG. 1, the liquid ammonia in the liquid ammonia storage tank 14 is vaporized by the vaporizer 5, mixed with the ammonia supplied from the ammonia supply source by the gas mixer 15, and purified. And supplied to the vapor phase growth apparatus 9. In the vapor phase growth apparatus of the present invention, the ammonia recovered in the ammonia recovery device can be reused only for the recovered ammonia. Another ammonia) can be added and continuously fed to the vapor phase growth apparatus.

  EXAMPLES Next, although an Example demonstrates this invention concretely, this invention is not limited by this.

[Example]
(Production of vapor phase growth equipment)
A vapor phase growth apparatus as shown in FIG. 2 was manufactured as follows. First, five substrate holders 24 (made of SiC-coated carbon) capable of holding one 3-inch substrate inside a stainless steel reaction vessel, and a disk-shaped susceptor 26 (made of SiC-coated carbon, diameter 600 mm, thickness) 20 mm, capable of holding five substrate holders 24), susceptor facing surface 27 (made of carbon) provided with a flow path 38 through which refrigerant flows, heater 28 (carbon heater), source gas supply unit 31 (made of carbon), reaction gas A discharge unit 32, an inert gas supply unit 33 (made of boron nitride), an inert gas discharge unit 34, and the like are provided. Eight inert gas discharge portions 34 are provided around the heater 28, and each inert gas discharge portion 34 is provided at equal intervals and at an equal distance from the inert gas supply portion 33.
Further, a light-transmitting ceramic plate 36 (quartz plate) similar to that described in Example 1 of Patent Document 1 was provided by being held and reinforced as described in Example 1 of Patent Document 1. The gap between the light transmissive ceramic plate and the heater was 7 mm, and the gap between the light transmissive ceramic plate and the susceptor was also 7 mm.

  And as the flow path 38 which distribute | circulates a refrigerant | coolant, one piping was arrange | positioned spirally toward the peripheral part from the center part. The source gas supply unit 31 forms three gas jets that are vertically partitioned by two disk-shaped partitions (made of carbon) having a diameter of 200 mm and a thickness of 2 mm. From the upper jets, ammonia and middle layers are formed. The gas containing TMG can be supplied from the nozzle and the nitrogen can be supplied from the lower nozzle. Piping was connected to each gas flow path of the source gas supply unit so that each gas having a desired flow rate and concentration could be supplied via a mass flow controller or the like.

Next, a total of five substrates made of 3 inch size sapphire were set in each substrate holder 24. The distance between the front end of the gas ejection port and the substrate was 32.4 mm.
Further, a filter 10 and a gas compressor 11 are installed, and a heat pump type cooler 12 including a refrigerant (ammonia) feeder 17, an expansion valve 18, a condensation valve 19, a heat exchanger 20, and a liquid ammonia tank 21 is installed. Connected by piping or the like, and further, the pressure adjusting device 13 and the liquid ammonia storage tank 14 were connected to the heat pump type cooler 12 to produce an ammonia recovery device as shown in FIG. The ammonia recovery device 23 thus manufactured was connected to the reaction gas discharge unit 32 of the vapor phase growth apparatus 9. Further, an ammonia vaporizer 5 and the like were provided and connected by piping or the like, and a vapor phase growth system as shown in FIG. 1 was manufactured.

(Vapor phase growth experiment)
A vapor phase growth experiment in which gallium nitride (GaN) is grown on the surface of the substrate was performed using the vapor phase growth system of FIG. 1 equipped with the vapor phase growth apparatus of FIG. First, nitrogen (flow rate: 80 L / min) is circulated from the inert gas supply unit 33 and discharged to the outside from the inert gas discharge unit 34, and such circulation of the inert gas is continued until the end of vapor phase growth. did.
The substrate 41 was annealed by raising the temperature of the substrate 41 to 1050 ° C. while flowing hydrogen from the source gas supply unit 31. Subsequently, the temperature of the substrate 41 is lowered to 510 ° C., and a buffer layer having a thickness of 20 nm made of GaN is grown on the sapphire substrate 41 using trimethylgallium (TMG) and ammonia as source gases and hydrogen as a carrier gas. After the buffer layer growth, the supply of only TMG was stopped, and the temperature of the substrate 41 was raised to 1050 ° C. Thereafter, ammonia (flow rate: 30 L / min) from the upper jet of the raw material gas supply unit 31, TMG (flow rate: 60 cc / min) and hydrogen (flow: 30 L / min) from the middle jet, and from the lower jet Nitrogen (flow rate: 40 L / min) was supplied to grow a gallium nitride film for 2 hours.

During this time, a part of the exhaust gas discharged from the reaction gas discharge unit 32 is sampled, and the gas compressor 11 and the heat pump type cooler 12 are operated to liquefy the ammonia in the exhaust gas and collect it in the liquid ammonia storage tank 14. did. The exhaust gas was pressurized from normal pressure to 1 MPaG by the gas compressor, and cooled to -40 to -45 ° C by a heat pump type cooler.
As a result of the measurement, the components of the exhaust gas discharged from the reaction gas discharge unit 32 were 30% ammonia, 30% hydrogen, and 40% nitrogen. Further, the recovery rate of ammonia in the liquid ammonia tank 21 was 79%.

[Comparative example]
Similar to the vapor phase growth apparatus used in the examples except that the inert gas discharge unit is not provided and the inert gas supplied from the inert gas supply unit is also discharged from the reaction gas discharge unit together with the reaction gas. A vapor phase growth apparatus was manufactured. Using such a vapor phase growth apparatus, a vapor phase growth experiment similar to the example was performed. During this time, ammonia was recovered by an ammonia recovery device in the same manner as in the example.
As a result of the measurement, the components of the exhaust gas discharged from the reaction gas discharge unit 32 were ammonia 17%, hydrogen 17%, and nitrogen 66%. Further, the recovery rate of ammonia in the liquid ammonia tank 21 was 73%.

  The vapor phase growth apparatus of the present invention is a group III nitride semiconductor vapor phase growth apparatus, and is particularly suitable as a gallium nitride semiconductor vapor phase growth apparatus.

The block diagram which shows an example of the vapor phase growth system in this invention Vertical sectional configuration diagram showing an example of a vapor phase growth apparatus of the present invention Vertical sectional configuration diagram showing an example of a vapor phase growth apparatus other than FIG. 2 of the present invention FIG. 2 is a vertical sectional view showing an example of a vapor phase growth apparatus other than FIGS. Vertical cross-sectional block diagram which shows an example of vapor phase growth apparatuses other than FIGS. 2-4 of this invention AA sectional view of FIG. A'-A 'sectional view of FIG. The block diagram which shows an example of the ammonia collection | recovery apparatus used for the vapor phase growth system in this invention

DESCRIPTION OF SYMBOLS 1 Supply source of organometallic compound 2 Supply source of nitrogen 3 Supply source of hydrogen 4 Supply source of ammonia 5 Vaporizer 6 Nitrogen purification device 7 Hydrogen purification device 8 Ammonia purification device 9 Vapor phase growth device 10 Filter 11 Gas compressor 12 Heat pump Refrigerator 13 Pressure regulator 14 Liquid ammonia storage tank 15 Gas mixer 16 Gas discharge line 17 Refrigerant liquid feeder 18 Expansion valve 19 Condensation valve 20 Heat exchanger 21 Liquid ammonia tank 22 Liquid ammonia 23 Ammonia recovery device 24 Substrate holder 25 Heat equalizing plate 26 Susceptor 27 Face of susceptor 28 Heater 29 Heat insulation plate 30 Reactor 31 Raw material gas supply unit 32 Reaction gas discharge unit 33 Inert gas supply unit 34 Inert gas discharge unit 35A Outer end support member 35B Center portion Support member 35C Vent 36 Light transmissive ceramic Passage 39 susceptor rotation shaft 40 susceptor rotating plate 41 substrate flowing through the plate 37 the gear unit 38 refrigerant

Claims (5)

  A Group III nitride semiconductor vapor phase growth apparatus comprising a light-transmitting ceramic plate between a substrate mounting position and a heater, and having a configuration for supplying an inert gas to a gap between the heater and the light-transmitting ceramic plate The vapor phase growth apparatus is characterized in that the inert gas discharge section is provided separately from the reaction gas discharge section.   Around the heater, there is a structure that surrounds the heater composed of a light-transmitting ceramic plate, a heat insulating plate of the heater, and a support member arranged outside the heater, and has a configuration in which an inert gas is circulated in the structure. The vapor phase growth apparatus according to claim 1.   The vapor phase growth apparatus according to claim 1, wherein the reaction gas discharge section is connected to an ammonia recovery apparatus.   The vapor phase growth apparatus according to claim 1, wherein an inert gas supply unit is provided at a central part, and an inert gas discharge part is provided at a peripheral part.   The vapor phase growth apparatus according to claim 1, wherein the light transmissive ceramic plate is held or reinforced by a support member.

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