JP2014175487A5 - - Google Patents
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- JP2014175487A5 JP2014175487A5 JP2013047105A JP2013047105A JP2014175487A5 JP 2014175487 A5 JP2014175487 A5 JP 2014175487A5 JP 2013047105 A JP2013047105 A JP 2013047105A JP 2013047105 A JP2013047105 A JP 2013047105A JP 2014175487 A5 JP2014175487 A5 JP 2014175487A5
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- metal element
- nitride film
- material containing
- metal nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002184 metal Substances 0.000 claims 36
- 229910052751 metal Inorganic materials 0.000 claims 36
- 239000002994 raw material Substances 0.000 claims 21
- 150000004767 nitrides Chemical class 0.000 claims 14
- 239000002131 composite material Substances 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 239000000463 material Substances 0.000 claims 6
- 150000001412 amines Chemical class 0.000 claims 4
- 229910052736 halogen Inorganic materials 0.000 claims 3
- 150000002367 halogens Chemical class 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- -1 ethylmethyl Chemical group 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 239000003446 ligand Substances 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Claims (9)
前記基板に対して、第３金属元素を含む第３原料と、窒素を含む第４原料とを交互に供給して前記複合金属窒化膜の上に金属窒化膜を形成する工程と、
を有する半導体装置の製造方法。 A first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element different from the first metal element and an amine with respect to the substrate on which the high dielectric constant film is formed. Alternately supplying and forming a composite metal nitride film on the high dielectric constant film ;
Forming a metal nitride film on the composite metal nitride film by alternately supplying a third material containing a third metal element and a fourth material containing nitrogen to the substrate; and
A method for manufacturing a semiconductor device comprising:
前記基板に対して、第３金属元素を含む第３原料と、窒素を含む第４原料とを交互に供給して前記複合金属窒化膜の上に金属窒化膜を形成する手順と、
をコンピュータに実行させるプログラム。 A first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element different from the first metal element and an amine with respect to the substrate on which the high dielectric constant film is formed. A procedure for alternately supplying and forming a composite metal nitride film on the high dielectric constant film ,
A step of alternately supplying a third raw material containing a third metal element and a fourth raw material containing nitrogen to the substrate to form a metal nitride film on the composite metal nitride film;
A program that causes a computer to execute.
前記処理室に第１金属元素とハロゲン元素とを含む第１原料を供給する第１原料供給系と、
前記処理室に前記第１金属元素とは異なる第２金属元素とアミンとを含む第２原料を供給する第２原料供給系と、
前記処理室に第３金属元素を含む第３原料を供給する第３原料供給系と、
前記処理室に窒素を含む第４原料を供給する第４原料供給系と、
前記第１原料供給系、前記第２原料供給系、前記第３原料供給系、前記第４原料供給系を制御して、前記処理室に収容された高誘電率膜が形成された基板に対して、前記第１原料と前記第２原料とを交互に供給して前記高誘電率膜の上に複合金属窒化膜を形成する処理と、前記基板に対して、前記第３原料と前記第４原料とを交互に供給して前記複合金属窒化膜の上に金属窒化膜を形成する処理と、行うように構成された制御部と、
を有する基板処理装置。 A processing chamber for accommodating the board,
A first raw material supply system for supplying a first raw material containing a first metal element and a halogen element to the processing chamber;
A second raw material supply system for supplying a second raw material containing a second metal element different from the first metal element and an amine to the processing chamber;
A third raw material supply system for supplying a third raw material containing a third metal element to the processing chamber;
A fourth raw material supply system for supplying a fourth raw material containing nitrogen to the processing chamber;
Controlling the first raw material supply system, the second raw material supply system, the third raw material supply system, and the fourth raw material supply system to a substrate on which a high dielectric constant film accommodated in the processing chamber is formed Te, a process of forming a composite metal nitride film on the high dielectric constant film and said second material and said first material is supplied alternately to the substrate, the said third raw material 4 Processing for alternately supplying raw materials to form a metal nitride film on the composite metal nitride film, and a control unit configured to perform ,
A substrate processing apparatus.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013047105A JP6108530B2 (en) | 2013-03-08 | 2013-03-08 | Semiconductor device manufacturing method, program, and substrate processing apparatus |
| US14/187,799 US9059089B2 (en) | 2013-02-28 | 2014-02-24 | Method of manufacturing semiconductor device |
| KR1020140023242A KR101537946B1 (en) | 2013-02-28 | 2014-02-27 | Method of manufacturing a semiconductor device, method of processing a substrate, non-transitory computer-readable recording medium and substrate processing apparatus |
| US14/708,004 US9190281B2 (en) | 2013-02-28 | 2015-05-08 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013047105A JP6108530B2 (en) | 2013-03-08 | 2013-03-08 | Semiconductor device manufacturing method, program, and substrate processing apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014175487A JP2014175487A (en) | 2014-09-22 |
| JP2014175487A5 true JP2014175487A5 (en) | 2016-04-21 |
| JP6108530B2 JP6108530B2 (en) | 2017-04-05 |
Family
ID=51696426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013047105A Active JP6108530B2 (en) | 2013-02-28 | 2013-03-08 | Semiconductor device manufacturing method, program, and substrate processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6108530B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100368311B1 (en) * | 2000-06-27 | 2003-01-24 | 주식회사 하이닉스반도체 | Method of forming a gate in a semiconductor device |
| JP5702584B2 (en) * | 2010-11-30 | 2015-04-15 | 株式会社日立国際電気 | Semiconductor device manufacturing method and substrate processing apparatus |
-
2013
- 2013-03-08 JP JP2013047105A patent/JP6108530B2/en active Active
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