JP2014120515A - Substrate for optical semiconductor device and method of manufacturing the same, aggregate substrate, and optical semiconductor device and method of manufacturing the same - Google Patents

Abstract

To provide a high-strength substrate for an optical semiconductor device and a method for manufacturing the same, without the separation of a metal lead frame and resin, for realizing an optical semiconductor device with high heat dissipation and high durability at low cost. Objective.
An optical semiconductor device substrate having a first lead frame for mounting a light emitting element and a second lead frame electrically connected to the light emitting element, wherein the first lead is provided. Resin that covers a frame, the second lead frame, a base portion made of resin formed in a gap between the lead frames, and a region of the side surface and surface of the base portion on which the light emitting element is mounted The substrate for an optical semiconductor device, wherein the frame portion is integrally molded, and the height position of the upper end of the resin frame portion is lower than the upper end of the light emitting element to be mounted.
[Selection] Figure 1

Description

  The present invention relates to a substrate for an optical semiconductor device, a manufacturing method thereof, a collective substrate, an optical semiconductor device using the substrate, and a manufacturing method thereof.

Optical elements such as LEDs and photodiodes are widely used in the industry because of their high efficiency and high resistance to external stresses and environmental influences. Furthermore, in addition to high efficiency, optical elements have a long lifetime, are compact, can be constructed in many different structures, and can be manufactured at relatively low manufacturing costs.
In particular, in a high-power optical semiconductor device that generates a large amount of heat, it is important to have a structure that enhances heat dissipation as well as high heat resistance.

In general, a substrate used for an optical semiconductor device includes a resin substrate such as FR-4 and a ceramic substrate such as alumina and aluminum nitride. The resin substrate is a substrate with poor heat dissipation and high durability, and the heat dissipation and durability of the ceramic substrate is superior to the resin substrate, but is high in cost.
An example of a conventional optical semiconductor device using a resin substrate is shown in FIG. As shown in FIG. 5, the conventional optical semiconductor device 110 includes a first lead frame 102 for placing the light emitting element 107 and a second lead frame 103 electrically connected to the light emitting element 107. It has the 1st resin molding 101 formed by integral molding by transfer molding, and the 2nd resin molding 108 which coat | covers and seals the light emitting element 107. FIG. The first resin molded body 101 has a recess having a bottom surface and a side surface, and has a reflector structure (see, for example, Patent Document 1). In general, thermosetting resins such as PPA and silicone resin are used for these molded bodies.

Japanese Patent No. 4608294

However, the resin-based substrate in which the reflector structure and the metal lead frame are integrally molded is liable to cause peeling of the resin between the metal lead frame and particularly the reflector structure portion, which may cause a problem in quality.
In addition, it is necessary to ensure the strength of the substrate in order to suppress substrate cracks during degate.

  The present invention has been made in view of the above-described problems, and is a high-strength optical device that is free from peeling of a metal lead frame and a resin for realizing an optical semiconductor device having high heat dissipation and high durability at low cost. An object of the present invention is to provide a substrate for a semiconductor device, a manufacturing method thereof, and an aggregate substrate in which the substrates for an optical semiconductor device are aggregated.

  In order to achieve the above object, according to the present invention, an optical semiconductor device having a first lead frame for mounting a light emitting element and a second lead frame electrically connected to the light emitting element. A base portion made of a resin formed in the first lead frame, the second lead frame, and a gap between the lead frames, and the light emission of the side surface and the surface of the base portion. A resin frame portion that covers the periphery of the region where the element is mounted is integrally molded, and the height position of the upper end of the resin frame portion is lower than the upper end of the light emitting element to be mounted. An optical semiconductor device substrate is provided.

  If it is such, it can suppress significantly that a resin frame part and a lead frame peel, and it becomes a high intensity | strength board | substrate for optical semiconductor devices. Further, since it has a base portion in which a metal and a resin are combined, heat dissipation and strength are improved, and the cost is lower than that of a ceramic substrate. Furthermore, since the light emitting element is mounted on the metal frame, decomposition and discoloration of the resin portion due to heat generated from the light emitting element can be suppressed. Using this, an optical semiconductor device having high heat dissipation and high durability can be realized at low cost. In addition, since the height position of the upper end of the resin frame portion is lower than the upper end of the light emitting element, it is possible to efficiently extract light emitted from the lateral side of the light emitting element.

At this time, it is preferable that the base portion and the resin frame portion are integrally formed by transfer molding.
In such a case, warpage of the base portion and resin burrs are effectively reduced, and an optical semiconductor device integrally molded using the first and second lead frames having complicated shapes. A substrate can be configured.

Moreover, at this time, it is preferable that the resin of the said base part and / or the said resin frame part consist of thermosetting resins.
If it is such, it will become the thing excellent in heat resistance and intensity | strength, and can improve adhesiveness with a sealing material.

Moreover, it is preferable at this time that the resin of the said base part and / or the said resin frame part contain a titanium oxide or an aluminum oxide.
If it is such, it will be excellent in heat resistance and will have a high luminous flux.

Further, at this time, the base portion has a part made of resin in the thickness direction from the front surface to the back surface, a part made of resin partly made of metal, and a part made entirely of metal. Preferably there is.
If it is such, it will become more excellent in heat dissipation and intensity | strength.

Moreover, it is preferable at this time that the part which covers the said base part surface of the said resin frame part is extended to the inner side of the area | region which seals the said light emitting element to mount with a sealing material.
If it is such, while peeling of a resin frame part can be suppressed more reliably, the joint strength of the sealing material and resin frame part of the optical semiconductor device manufactured using this board | substrate for optical semiconductor devices is raised more. be able to.

  According to the present invention, there is provided a collective substrate in which the optical semiconductor device substrates of the present invention are assembled, and the outer periphery of the collective substrate has a guide frame portion surrounding the assembled optical semiconductor device substrate, In the guide frame portion, there is provided a collective substrate characterized by having a resin dam structure at a position adjacent to a gate portion or an air vent portion of a mold used for the integral molding.

Such a collective substrate not only improves the strength of the collective substrate, but also prevents the gate from remaining on the collective substrate at the time of degate, and collective sealing of light emitting elements to the aggregated optical semiconductor device substrate. It will be possible. Thereby, not only cost reduction and quality improvement of the collective substrate but also color variation of the light emitting elements can be reduced.

According to the present invention, there is provided an optical semiconductor device, wherein a light emitting element is mounted on the first lead frame of the optical semiconductor device substrate or the collective substrate of the present invention, and the mounted light emitting element is sealed. An optical semiconductor device is provided which is sealed with a material.
If it is such, it will become a low-cost optical semiconductor device with high heat dissipation and high durability.

  In addition, according to the present invention, there is provided a method for manufacturing a substrate for an optical semiconductor device, comprising: a first lead frame for mounting a light emitting element; and a second lead frame electrically connected to the light emitting element. The first lead frame, the second lead frame, a base portion made of resin formed in a gap between the lead frames, and the light emitting element to be mounted among the side surfaces and the surface of the base portion An optical semiconductor comprising a step of integrally molding a resin frame portion covering a periphery of a region where the optical frame is mounted so that a height position of an upper end of the resin frame portion is lower than an upper end of the light emitting element to be mounted A method of manufacturing a device substrate is provided.

  With such a manufacturing method, it is possible to manufacture a high-strength substrate for an optical semiconductor device in which peeling between the resin frame portion and the lead frame is significantly suppressed. Further, this optical semiconductor device substrate can efficiently extract light emitted from the lateral side of the light emitting element. Further, since the substrate is manufactured by combining the metal and the resin, the heat dissipation and strength can be improved, and the substrate can be manufactured at a lower cost than the method using the ceramic substrate. Furthermore, since the light emitting element is mounted on the metal frame, an optical semiconductor device substrate capable of suppressing decomposition and discoloration of the resin portion due to heat generated from the light emitting element can be manufactured. By using this, an optical semiconductor device with high heat dissipation and high durability can be manufactured at low cost.

At this time, it is preferable to perform integral molding of the base portion and the resin frame portion by transfer molding.
In this way, warpage of the substrate and resin burrs can be effectively reduced, and even if the first and second lead frames having complicated shapes are used, they can be easily integrally formed.

At this time, it is preferable that the resin of the base and / or the resin frame is a thermosetting resin.
In this way, it is possible to manufacture a substrate for an optical semiconductor device that is excellent in heat resistance and strength and has improved adhesion to a sealing material.

At this time, it is preferable that titanium oxide or aluminum oxide is included in the resin of the base portion and / or the resin frame portion.
In this way, an optical semiconductor device substrate having excellent heat resistance and high luminous flux can be manufactured.

Further, at this time, in the step of integrally molding the base part and the resin frame part, the base part is made of resin in the thickness direction from the front surface to the back surface, and part of the resin is part of the metal. It is preferable to mold a portion made of metal and a portion made entirely of metal.
In this way, it is possible to manufacture an optical semiconductor device substrate that is more excellent in heat dissipation and strength.

Further, at this time, in the step of integrally molding the base portion and the resin frame portion, the portion of the resin frame portion covering the surface of the base portion is inside the region where the light emitting element to be mounted is sealed with a sealing material. It is preferable to elongate.
If it does in this way, while peeling of a resin frame part can be suppressed more reliably, the board | substrate for optical semiconductor devices which can raise the joining strength of the sealing material and resin frame part of an optical semiconductor device more can be manufactured.

  According to the present invention, there is also provided a method for manufacturing an optical semiconductor device, wherein the optical semiconductor device substrate manufactured by the method for manufacturing an optical semiconductor device substrate of the present invention or the collective substrate of the present invention is used, and the optical semiconductor device is manufactured. There is provided a method for manufacturing an optical semiconductor device, wherein a light emitting element is mounted on the first lead frame of a substrate for a semiconductor device, and the mounted light emitting element is sealed with a sealing material.

  With such a manufacturing method, a low-cost optical semiconductor device with high heat dissipation and high durability can be manufactured.

  In the present invention, in the manufacture of a substrate for an optical semiconductor device, a first lead frame, a second lead frame, a base portion made of resin formed in a gap between the lead frames, and a side surface of the base portion In addition, the resin frame portion that covers the periphery of the region where the light emitting element to be mounted on the surface is mounted is integrally molded so that the height position of the upper end of the resin frame portion is lower than the upper end of the light emitting element to be mounted. A high-strength optical semiconductor device substrate that can significantly reduce the occurrence of peeling between the lead frame and the resin frame, and a collective substrate obtained by assembling the same Can be manufactured.

It is a figure which shows an example of the board | substrate for optical semiconductor devices of this invention. It is a figure which shows an example of the aggregate substrate of this invention. It is a figure which shows an example of the optical semiconductor device of this invention. It is a flowchart which shows an example of the manufacturing method of the optical semiconductor device of this invention. It is a figure which shows an example of the conventional optical semiconductor device.

Hereinafter, although an embodiment is described about the present invention, the present invention is not limited to this.
In the manufacture of the conventional optical semiconductor device, as described above, there is a problem that when the lead frame and the reflector structure are integrally molded with resin, the lead frame and the resin are peeled off or the substrate strength is insufficient. Therefore, the present inventor has intensively studied to solve this problem. As a result, the reflector structure is not integrally molded, and the first lead frame, the second lead frame, and the base portion made of resin formed in the gap between the lead frames, and the side surface and the surface of the base portion If the resin frame portion that covers the periphery of the region where the light emitting element is mounted is integrally molded so that the height position of the upper end of the resin frame portion is lower than the upper end of the light emitting element to be mounted, the lead frame and the resin frame It is possible to obtain a high-strength substrate for an optical semiconductor device in which peeling of the portion is greatly suppressed, and the aggregate substrate in which the optical semiconductor device substrate is connected by a resin frame portion has a significantly improved strength. In view of this, the present invention has been completed.

First, the substrate for an optical semiconductor device of the present invention will be described.
As shown in FIG. 1, an optical semiconductor device substrate 1 according to the present invention includes a first lead frame 2, a second lead frame 3, and a base portion made of a resin 6 formed in a gap between the lead frames. 4 and the resin frame part 5 are integrally molded.
The material of the first lead frame 2 and the second lead frame 3 is a metal, for example, a copper alloy, an aluminum alloy, an iron alloy, or the like. A light emitting element is mounted on the first lead frame 2 when an optical semiconductor device described later is manufactured. The light emitting element mounting region 12 is the first lead frame 2, that is, a portion where the metal is exposed. The second lead frame 3 is electrically connected to the light emitting element when the optical semiconductor device is manufactured.

The base part 4 is composed of a first lead frame 2, a second lead frame 3, and a resin 6 formed in a gap between the lead frames 2, 3 so that the light emitting element mounting region 12 becomes flat. It is a thing.
The resin frame portion 5 covers the periphery of the light emitting element mounting region 12 on the side surface of the base portion 4 and the surface of the base portion 4, and the height position of the upper end of the resin frame portion 5 is the upper end of the light emitting element to be mounted. Is lower. That is, the height position of the upper end of the resin frame part 5 can be located, for example, on the lead frame side of 5 to 150 μm from the upper surface of the light emitting element. Moreover, the height position of the upper end of the resin frame part 5 can be made into the position which protruded, for example by 30-200 micrometers from the upper surface of the 1st lead frame 2 which mounts a light emitting element. Moreover, the resin frame part 5 can also play a role of blocking the flow of the sealing material when sealing the light emitting element during the manufacture of the optical semiconductor device.

  As described above, the substrate 1 for an optical semiconductor device of the present invention has the base portion 4 in which a metal and a resin are combined, and has a light emitting element mounting region on the metal frame, so that it has high heat dissipation and high strength. It will be a thing. In addition, since a resin is used, the cost is lower than that of a ceramic substrate, and by adding a white pigment to the resin, absorption of light by the resin can be reduced and reflectance can be increased. The optical semiconductor device substrate 1 is a high-strength optical semiconductor device substrate in which occurrence of peeling between the lead frame of the base portion and the resin frame portion is greatly suppressed. Furthermore, by mounting the light emitting element on the metal frame, the resin portion can be prevented from being decomposed and discolored by heat generated from the light emitting element, and the durability is excellent.

Moreover, since the height position of the upper end of the resin frame portion is lower than the upper end of the light emitting element to be mounted, the light emitted from the light emitting element can be used with high efficiency.
As shown in FIG. 3, the resin frame portion 5 may be extended to the inside of the region where the light emitting element mounted on the portion covering the base portion surface is sealed with the sealing material 8. If it is such, while peeling of the resin frame part 5 can be suppressed more reliably, the joining strength of the sealing material 8 and the resin frame part 5 of the optical semiconductor device manufactured using this board | substrate for optical semiconductor devices is used. Can be further enhanced.

Using the optical semiconductor device substrate 1 of the present invention, an optical semiconductor device with high heat dissipation and high durability can be realized at low cost.
A thermosetting resin can be used as the resin 6 and / or the resin frame portion 5 of the base portion 4. Thereby, it becomes the thing excellent in heat resistance and intensity | strength. A thermosetting resin having no aromatic component in the molecule is desirable from the viewpoint of light resistance. Moreover, a fiber reinforcement can be included in the resin 6, and it becomes what was more excellent in heat resistance and intensity | strength by carrying out like this. Glass fiber can be used as the fiber reinforcement.

  Examples of the thermosetting resin preferably used here are 1) a thermosetting silicone resin composition, 2) a thermosetting epoxy resin composition comprising a triazine derivative epoxy resin, an acid anhydride, a curing accelerator, and an inorganic filler. 3) The hybrid resin (hybrid resin) composition etc. which consist of a thermosetting silicone resin and an epoxy resin are mentioned. However, the resin 6 and the resin frame portion 5 are not limited to these, and may be determined according to the final use application of the optical semiconductor device.

As the thermosetting silicone resin composition of 1), a condensation type thermosetting silicone resin composition represented by the following average composition formula (1) is representative.
R ¹ _a Si (OR ² ) _b (OH) _c O _{(4-abc) / 2} (1)
(Wherein R ¹ is the same or different organic group having 1 to 20 carbon atoms, R ² is the same or different organic group having 1 to 4 carbon atoms, 0.8 ≦ a ≦ 1.5, 0 ≦ (b ≦ 0.3, 0.001 ≦ c ≦ 0.5, 0.801 ≦ a + b + c <2)
In addition, an addition-curable silicone resin composition can also be used.

  As the triazine derivative epoxy resin of the thermosetting epoxy resin composition of the above 2), 1,3,5-triazine nucleus derivative epoxy resin is preferable from the viewpoint of heat resistance, light resistance and the like. The thermosetting epoxy resin composition is not limited to a triazine derivative and an acid anhydride as a curing agent, and conventionally known epoxy resins, amines, phenol curing agents, and the like may be used as appropriate.

  An inorganic filler can be blended in the composition of the silicone resin and the epoxy resin in the above 3). As the inorganic filler to be blended, those usually blended in an epoxy resin composition or the like can be used. Examples thereof include silicas such as fused silica and crystalline silica, alumina, silicon nitride, aluminum nitride, boron nitride, glass fibers, fibrous fillers such as wollastonite, antimony trioxide, and the like. The average particle diameter and shape of these inorganic fillers are not particularly limited.

  Moreover, in order to improve heat resistance and light flux property, the resin 6 and / or the resin frame 5 may contain titanium oxide or aluminum oxide. Titanium dioxide can be blended as the titanium oxide. Titanium dioxide is blended as a white colorant to increase whiteness and improve light reflection efficiency. The unit cell of titanium dioxide may be either a rutile type or an anatase type. Also, the average particle size and shape are not limited. Titanium dioxide can be surface-treated in advance with a hydrous oxide such as Al or Si in order to enhance compatibility and dispersibility with resins and inorganic fillers.

The filling amount of titanium dioxide is preferably 2 to 30% by mass, particularly 5 to 10% by mass based on the entire composition. When the content is 2% by mass or more, sufficient whiteness is obtained, and when the content is 30% by mass or less, moldability such as unfilling and voids is not deteriorated.
In order to have a predetermined function, at least one selected from the group consisting of a filler, a diffusing material, a pigment, a fluorescent material, a reflective material, and a light shielding material is mixed in the resin 6 and / or the resin frame 5 You can also If necessary, a part of white resist may be applied.

It is preferable that the base part 4 and the resin frame part 5 are integrally molded by transfer molding. If it is such, the curvature and resin burr | flash of the board | substrate 1 for optical semiconductor devices will be reduced more effectively. In addition, the optical semiconductor device substrate 1 integrally formed using the first and second lead frames having complicated shapes such as holes and grooves can be configured.
For example, as shown in FIG. 1, the base part 4 is a part (a) made entirely of resin in the thickness direction from the front surface to the back face, a part (b) partly made of resin and part of the other part made of metal, It can be integrally formed as having a part (c) made entirely of metal.

  If it is the base part 4 which has such a structure, intensity | strength will be improved more. In particular, the adhesiveness between the resin and the metal can be improved by the part in which (b) is part of the resin and the other part is made of metal. Further, the part made of resin in the thickness direction from the front surface to the back surface of (a) becomes an insulator between the first lead frame and the second lead frame. In addition, if the part made of all metal (c) in the first lead frame 2 is used as the light emitting element mounting area, the heat generated from the light emitting element is efficiently released from the exposed surface to the outside to improve the heat dissipation. In addition, if the portion (c) in the second lead frame 3 is a location where wire bonding is performed, the bonding strength of the wire bonding can be improved. Since the metal is exposed also on the back side of the substrate, the part (c) can be configured to be electrically connected from the back side.

  FIG. 2 shows the collective substrate of the present invention. FIG. 2B is an enlarged view of a portion surrounded by a circle in FIG. As shown in FIG. 2 (a), the collective substrate 20 of the present invention is an aggregate of substrates 1 for optical semiconductor devices, and is a collective substrate compatible with large-area printed circuit boards and MAP (matrix array package) production methods. It takes the form of That is, a plurality of light-emitting element mounting regions 12 are provided on the collective substrate 20, and a plurality of optical semiconductor devices can be manufactured by mounting the light-emitting elements and dicing after sealing. On the outer periphery of the collective substrate 20, there is a guide frame portion 13 surrounding the assembled optical semiconductor device substrate 1. Further, the guide frame portion 13 has a resin dam structure 11 at a position adjacent to a gate portion or an air vent portion of a mold used when integrally molding.

  The collective substrate 20 according to the present invention not only prevents the collective substrate from being bent or cracked during degate, but also prevents the remaining degate, and by using the resin dam structure 11, collective sealing of the light-emitting elements that are collectively mounted is possible. It becomes. Thereby, not only cost reduction and quality improvement of the collective substrate but also color variation of the light emitting elements can be reduced. In addition, since the collective substrate 20 of the present invention has the resin frame portion 5 at the connection portion between the substrates 1 for optical semiconductor devices, the strength of the collective substrate 20 is greatly improved.

Next, the manufacturing method of the substrate for an optical semiconductor device of the present invention will be described.
Here, the case where the above-described substrate 1 for an optical semiconductor device of the present invention as shown in FIG. 1 is manufactured will be described.
First, first and second lead frames and a resin for integrally molding them are prepared. The first and second lead frames are preferably subjected to plasma treatment or UV ozone treatment in order to increase the adhesive strength with the resin.

  The prepared first lead frame, the second lead frame, a base portion made of resin formed in a gap between the lead frames, and a light emitting element to be mounted among the side surfaces and the surface of the base portion are mounted. A resin frame that covers the periphery of the region is integrally formed. At this time, the height position of the upper end of the resin frame portion is set to be lower than the upper end of the light emitting element to be mounted. Here, the material of the lead frame, the resin, and the mixture can be the same as those described in the optical semiconductor device substrate 1 of the present invention described above.

  In this way, it is possible to manufacture a high-strength substrate for an optical semiconductor device in which peeling between the resin frame portion and the lead frame is significantly suppressed. Further, this optical semiconductor device substrate can efficiently extract light emitted from the lateral side of the light emitting element. In particular, this integral molding is preferably performed by transfer molding. If it does in this way, the curvature at the time of shaping | molding and a resin burr | flash can be reduced effectively. By reducing the warpage, the region where the light emitting elements of the first and second lead frames are mounted can be flattened with higher accuracy. Further, since the first lead frame and the second lead frame are substantially on the same plane, the stability at the time of mounting the light emitting element can be improved.

  If resin burrs are generated during molding, burring such as blasting or water jet is performed. However, if molding is performed by transfer molding as described above, the generation of resin burrs is greatly reduced. Therefore, the exposed metal surface can be kept in high quality.

The optical semiconductor device substrate manufactured by the method for manufacturing an optical semiconductor device substrate of the present invention further has the following advantages. Since the metal and the resin are combined and the mounting region for the light emitting element is provided on the metal frame, the heat dissipation and the strength are improved. In addition, since a resin is used, the cost is lower than a method using a ceramic substrate, and by adding a white pigment to the resin, light absorption by the resin can be reduced and the reflectance can be increased. The generation of warpage and resin burrs is greatly suppressed, and the substrate is of high quality. Furthermore, since the light emitting element mounting region is provided on the metal frame, decomposition and discoloration of the resin portion due to heat generated from the light emitting element can be suppressed.
Using this manufactured optical semiconductor device substrate, an optical semiconductor device with high heat dissipation and high durability can be realized at low cost.

When the base part and the resin frame part are integrally molded, as shown in FIG. 1, a part (a) made entirely of resin in the thickness direction from the front surface to the back surface, and part of the resin part is made of metal. It is preferable to mold the part (b) and the part (c) made entirely of metal.
If it does in this way, as demonstrated with the board | substrate 1 for optical semiconductor devices of this invention mentioned above, the board | substrate for optical semiconductor devices to manufacture can be made more excellent by heat dissipation and intensity | strength.

In this case, the part (a) can be molded by previously forming a through hole in the lead frame to be prepared and embedding a resin in the through hole. For the part (b), only the part of the lead frame corresponding to the part where the part is made of resin is removed in advance by, for example, an etching process to reduce the thickness, and the resin is embedded in the part. Can be molded. For the portion (c), a lead frame having the same thickness as the substrate to be manufactured may be prepared.
In addition, a part of the substrate can be coated with a white resist in order to improve luminous properties.

Next, the optical semiconductor device and the manufacturing method thereof according to the present invention will be described.
As shown in FIG. 3, in the optical semiconductor device 10 of the present invention, a light emitting element 7 is mounted on the first lead frame 2 of the optical semiconductor device substrate 1 of the present invention, and the mounted light emitting element 7 is sealed. It is sealed with the material 8. The light emitting element 7 is electrically connected to the second lead frame 3 through a wire 9. Alternatively, when the light emitting element 7 has electrodes on the upper surface and the lower surface, it may be electrically connected only by die bonding without using a wire.

An optical semiconductor device using such a substrate for an optical semiconductor device of the present invention has excellent heat dissipation and durability, and is low in cost.
The optical semiconductor device 10 may further include a Zener diode as a protective element. The Zener diode can be placed in parallel with the light emitting element apart from the light emitting element. The Zener diode can be arranged on either the inner side or the outer side of the encapsulant, and when arranged inside, it is necessary to consider the light distribution characteristics of the light emitting element.

  As shown in FIG. 4, the optical semiconductor device manufacturing method of the present invention uses the optical semiconductor device substrate manufactured by the above-described optical semiconductor device substrate manufacturing method of the present invention or the collective substrate of the present invention (FIG. 4). (A)), the light emitting element 7 is mounted on the first lead frame 2, and the light emitting element 7 and the second lead frame 3 are electrically connected through the wire 9 ((B) of FIG. 4). . However, when the light emitting element 7 has electrodes on the upper surface and the lower surface, it can be electrically connected only by die bonding without using a wire. FIG. 4 shows an example in which the collective substrate 20 of the present invention is used.

Next, the mounted light emitting element 7 is sealed with a sealing material 8 ((C) of FIG. 4). Although this sealing material 8 is not specifically limited, For example, it can be set as a thermosetting resin. Sealing with the sealing material 8 can be performed by dropping or compression molding.
The sealing material 8 is preferably mixed with a fluorescent material, so that the color of the optical semiconductor device can be easily adjusted.

When the aggregate substrate is used, it is divided into individual units by dicing ((D) in FIG. 4). In this case, it is preferable to heat the aggregate substrate together with the sheet at 70 ° C. to 90 ° C. for about 5 minutes immediately after the aggregate substrate is attached to the dicing sheet. Thereby, the adhesive agent of a collective substrate and a dicing sheet becomes familiar, and the chipping at the time of dicing can be prevented.
As described above, by using the optical semiconductor device substrate or the aggregate substrate of the present invention, an optical semiconductor device having excellent heat dissipation and durability and low cost can be manufactured.

  EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples of the present invention, but the present invention is not limited to these.

(Example)
The optical semiconductor device of the present invention as shown in FIG. 3 was manufactured according to the method for manufacturing an optical semiconductor device of the present invention.
First, a plurality of first and second lead frames are formed through an etching process using a 0.25 mm-thick Cu-based base material (Mitsubishi Shindoh Tamac 194), and Ni / Pd / Au plating is performed. A metal lead frame was prepared. Plasma treatment was performed on the surface of the metal lead frame at 50 W / 60 seconds. This metal lead frame was set in a transfer molding machine to produce an aggregate substrate in which substrates for an optical semiconductor device in which a base portion and a resin frame portion were integrally molded were assembled.

At this time, the height position of the upper end of the resin frame portion is set to be 120 μm from the surface of the metal lead frame in order to be lower than the upper end of the light emitting element to be mounted (TR350M series element height 150 μm manufactured by Cree). I did it.
In addition, a resin dam structure having a size of 50 mm × 2 mm × 0.9 mm was integrally formed on the collective substrate at the same time so as to be adjacent to the gate portion and the air vent portion in order to prevent residual resin at the time of degate.

After stamping the silicone die bond material (manufactured by Shin-Etsu Chemical Co., Ltd .: product name 632DA-1) on the area where the light emitting device of the assembled base is to be mounted, a blue LED chip (TR350M series made by Cree) is mounted and 150 ° C. 4 The die bond material was cured over time. Thereafter, wire bonding was performed using a 30 μm gold wire.
Thereafter, an inner material kneaded with a yellow phosphor and a silicone resin (trade name: KJR-9022) was applied with a dispenser made by Musashi Engineering, and then thermally cured at 150 ° C. for 4 hours to seal the light emitting element. Later, an optical semiconductor device assembly was obtained. The assembly was separated into pieces by a full dicing process with a dicing blade of 0.2 mm to obtain an optical semiconductor device.

(Comparative example)
An optical semiconductor device in which a light emitting element is mounted and sealed on a conventional substrate for an optical semiconductor device as shown in FIG. 5 in which a first lead frame and a second lead frame are integrally molded with resin so as to have a reflector structure. Manufactured.
First, an aggregate substrate in which the optical semiconductor device substrates having the reflector structure described above were assembled was manufactured. At this time, the integral molding was performed by transfer molding using an upper mold having a recess in a portion where the reflector was molded. The metal lead frame and the resin were the same as in the example. At this time, no resin dam structure was provided on the collective substrate.
An optical semiconductor device was manufactured in the same manner as in the example except that the aggregate substrate manufactured in this way was used.

<Evaluation of the remaining degate>
In the example and the comparative example, the remaining state of the degate and the occurrence of substrate cracks during the degate when the optical semiconductor device was manufactured were evaluated. The results are shown in Table 1. Table 1 shows the number of occurrences of delegation remaining with respect to the evaluation number. As shown in Table 1, in the examples, there is no degate residue and no substrate cracks, and the aggregate substrate and optical semiconductor device of the present invention maintain good strength and quality. On the other hand, in the comparative example, a degate residue and a substrate crack occurred at a considerable rate.

<Evaluation of peeling of resin frame>
The optical semiconductor devices manufactured in Examples and Comparative Examples were bonded to an external substrate, and a moisture absorption reflow test was performed. It was left in an environment of temperature 85 ° C. and humidity 60% for 168 hours, and then 260 ° C. reflow was performed three times in succession. Thereafter, red ink was dropped and left for 24 hours. And the peeling condition of a lead frame and a resin frame part was evaluated with the microscope. The results are shown in Table 2. Table 2 shows the number of occurrences of peeling with respect to the evaluation number. As shown in Table 2, no peeling occurred in the examples, and the collective substrate and the optical semiconductor device of the present invention maintained a good adhesion state with the external substrate. On the other hand, in the comparative example, peeling of the lead frame and the reflector occurred.

<Evaluation of crack>
The optical semiconductor devices manufactured in Examples and Comparative Examples were bonded to an external substrate, and a thermal shock test (ESPEC TSE-11-A) was performed under the conditions of -40 ° C to 150 ° C, 500 cycles, and 1,000 cycles. The crack generation situation was evaluated. The results are shown in Table 3. Table 3 shows the number of cracks generated with respect to the evaluation number. As shown in Table 3, no crack was generated in the examples, and the optical semiconductor device of the present invention maintained a good adhesion state with the external substrate. On the other hand, cracks occurred in the comparative example.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

DESCRIPTION OF SYMBOLS 1 ... Substrate for optical semiconductor devices, 2 ... 1st lead frame,
3 ... 2nd lead frame, 4 ... Base part, 5 ... Resin frame part,
6 ... Resin, 7 ... Light emitting element, 8 ... Sealing material, 9 ... Wire,
DESCRIPTION OF SYMBOLS 10 ... Optical semiconductor device, 11 ... Resin dam structure, 12 ... Mounting area of light emitting element,
13: guide frame portion, 20 ... collective substrate.

Claims (15)

An optical semiconductor device substrate comprising a first lead frame for mounting a light emitting element and a second lead frame electrically connected to the light emitting element,
The first lead frame, the second lead frame, a base portion made of resin formed in a gap between the lead frames, and a region where the light emitting element is mounted on the side surface and the surface of the base portion An optical semiconductor device substrate characterized in that a resin frame portion covering the periphery of the optical frame is integrally molded, and the height position of the upper end of the resin frame portion is lower than the upper end of the light emitting element to be mounted. .   The substrate for an optical semiconductor device according to claim 1, wherein the base portion and the resin frame portion are integrally formed by transfer molding.   3. The substrate for an optical semiconductor device according to claim 1, wherein the resin of the base portion and / or the resin frame portion is made of a thermosetting resin.   4. The substrate for an optical semiconductor device according to claim 1, wherein the resin of the base portion and / or the resin frame portion includes titanium oxide or aluminum oxide. 5.   The base portion has a part made of resin in the thickness direction from the front surface to the back surface, a part of the resin part of the other part made of metal, and a part made of metal. The substrate for an optical semiconductor device according to any one of claims 1 to 4.   The portion of the resin frame portion covering the surface of the base portion extends to the inside of a region where the light emitting element to be mounted is sealed with a sealing material. The substrate for an optical semiconductor device according to claim 1. An aggregate substrate in which the substrates for an optical semiconductor device according to any one of claims 1 to 6 are assembled,
A guide frame portion surrounding the assembled optical semiconductor device substrate is provided on an outer periphery of the collective substrate, and the guide frame portion is adjacent to a gate portion or an air vent portion of a mold used for the integral molding. A collective substrate having a resin dam structure at a position. An optical semiconductor device,
A light emitting element is mounted on the first lead frame of the optical semiconductor device substrate according to any one of claims 1 to 6 or the collective substrate according to claim 7, and the mounted light emitting element is mounted on the first lead frame. An optical semiconductor device which is sealed with a sealing material. A method for manufacturing a substrate for an optical semiconductor device, comprising: a first lead frame for mounting a light emitting element; and a second lead frame electrically connected to the light emitting element.
Mounting the first lead frame, the second lead frame, a base portion made of resin formed in a gap between the lead frames, and the light emitting element to be mounted among the side surfaces and the surface of the base portion A step of integrally molding a resin frame portion covering the periphery of the region to be mounted so that the height position of the upper end of the resin frame portion is lower than the upper end of the light emitting element to be mounted. A method for manufacturing a substrate.   10. The method for manufacturing a substrate for an optical semiconductor device according to claim 9, wherein the base part and the resin frame part are integrally molded by transfer molding.   The method for manufacturing a substrate for an optical semiconductor device according to claim 9 or 10, wherein the resin of the base portion and / or the resin frame portion is a thermosetting resin.   The method for manufacturing a substrate for an optical semiconductor device according to claim 9, wherein titanium oxide or aluminum oxide is included in the resin and / or the resin frame portion of the base portion. .   In the step of integrally molding the base part and the resin frame part, the base part includes a part made entirely of resin in the thickness direction from the front surface to the back surface, a part made of resin and a part made of metal. The method for manufacturing a substrate for an optical semiconductor device according to claim 9, wherein a portion made entirely of metal is molded.   In the step of integrally molding the base portion and the resin frame portion, extending the portion covering the surface of the base portion of the resin frame portion to the inside of the region where the light emitting element to be mounted is sealed with a sealing material The method for manufacturing a substrate for an optical semiconductor device according to any one of claims 9 to 13, characterized in that: A method for manufacturing an optical semiconductor device, comprising:
An optical semiconductor device substrate manufactured by the method for manufacturing an optical semiconductor device substrate according to any one of claims 9 to 14 or the aggregate substrate according to claim 7, wherein the optical semiconductor device substrate A method of manufacturing an optical semiconductor device, wherein a light emitting element is mounted on the first lead frame, and the mounted light emitting element is sealed with a sealing material.

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