JP2014109044A - Conductive punch for high temperature and method of producing the same - Google Patents
Conductive punch for high temperature and method of producing the same Download PDFInfo
- Publication number
- JP2014109044A JP2014109044A JP2012263019A JP2012263019A JP2014109044A JP 2014109044 A JP2014109044 A JP 2014109044A JP 2012263019 A JP2012263019 A JP 2012263019A JP 2012263019 A JP2012263019 A JP 2012263019A JP 2014109044 A JP2014109044 A JP 2014109044A
- Authority
- JP
- Japan
- Prior art keywords
- punch
- fine pattern
- manufacturing
- temperature conductive
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 claims abstract description 60
- 238000005245 sintering Methods 0.000 claims abstract description 23
- 238000005498 polishing Methods 0.000 claims abstract description 20
- 239000000843 powder Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000000919 ceramic Substances 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 238000000609 electron-beam lithography Methods 0.000 claims description 8
- 238000000206 photolithography Methods 0.000 claims description 8
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 3
- 239000011195 cermet Substances 0.000 claims description 3
- 229910000765 intermetallic Inorganic materials 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000013590 bulk material Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- -1 argon ions Chemical class 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000002490 spark plasma sintering Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910000943 NiAl Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Powder Metallurgy (AREA)
Abstract
【課題】 例えば放電プラズマ焼結法に用いて好適な、導電性があって、例えば１５００℃から２２００℃程度の高温にも耐えられる高温用導電性パンチ及びその製造方法を提供すること。
【解決手段】 １μｍから１００μｍの範囲の微細パターンを有する成形品を成形するための高温用導電性パンチの製造方法において、金型２０の微細パターン形成面を鏡面状に研磨する工程と、金型２０の研磨面２２に対して、微細パターン形成用の開口覆面部２４を装着する工程と、開口覆面部２４の装着された研磨面２２に対して、エネルギー性彫刻線を照射して、研磨面２２に微細パターンを形成する工程を含むことを特徴とする。
【選択図】図２PROBLEM TO BE SOLVED: To provide a high-temperature conductive punch suitable for use in, for example, a discharge plasma sintering method and capable of withstanding a high temperature of, for example, about 1500 ° C. to 2200 ° C. and a method for manufacturing the same.
In a method for manufacturing a high-temperature conductive punch for forming a molded product having a fine pattern in the range of 1 μm to 100 μm, a step of polishing a fine pattern forming surface of a mold 20 in a mirror shape, and a mold The step of attaching the opening covering surface portion 24 for forming a fine pattern to the polishing surface 22 of 20 and the polishing surface 22 to which the opening covering surface portion 24 is attached are irradiated with energetic engraving lines to thereby polish the polishing surface. 22 includes a step of forming a fine pattern.
[Selection] Figure 2
Description
本発明は、例えば放電プラズマ焼結法に用いて好適な、導電性があって、例えば１５００℃から２２００℃程度の高温にも耐えられる高温用導電性パンチ及びその製造方法に関する。本発明の高温用導電性パンチは、例えば放電プラズマ焼結法において材料粉末から表面にパターンを有するバルク材を製作する際に用いられるもので、荷重と電流を負荷する部品に関する。 The present invention relates to a high-temperature conductive punch suitable for use in, for example, a discharge plasma sintering method and capable of withstanding high temperatures of, for example, about 1500 ° C. to 2200 ° C. and a method for manufacturing the same. The high-temperature conductive punch of the present invention is used, for example, when a bulk material having a pattern on its surface from a material powder in a spark plasma sintering method, and relates to a component that loads a load and a current.
放電プラズマ焼結法は、パルス通電場プロセンシングの一つとして、パルス状に高電流を試料粉末に印加して、プラズマを発生させて粉末表面の原子を溶発・蒸着させて焼結する製造方法であり、パルス通電法、パルス通電加圧焼結法、プラズマ活性化焼結法とも呼ばれる。
放電プラズマ焼結法は、例えば特許文献３で開示されているように、材料粉末よりレンズのような光学素子を大まかな形状に作製するために用いる（本文献では光学表面に微細パターンを形成するための層を表面に有する。）。
The spark plasma sintering method is one of the pulsed electric field field sensing processes, in which a pulsed high current is applied to the sample powder to generate plasma and ablate and deposit the atoms on the powder surface to sinter. This method is also called a pulse current method, a pulse current pressure sintering method, or a plasma activated sintering method.
The spark plasma sintering method is used to produce an optical element such as a lens from a material powder in a rough shape as disclosed in Patent Document 3, for example (in this document, a fine pattern is formed on the optical surface). Have a layer for the surface.).
このような金型の表面に微細パターンを形成する技術として、例えば特許文献１、２で開示されている、ホットプレス用のスタンパー作製技術がある。ホットプレス法は、電気を流さないで、試料をヒーターで温めるものである。しかし、これらのホットプレス用のスタンパーでは、導電性がないため、放電プラズマ焼結法で使用できないという課題がある。すなわち、当該ホットプレス用のスタンパーでは、耐摩耗性のためダイヤモンドを用いているが、ダイヤモンドには導電性がないのである。 As a technique for forming a fine pattern on the surface of such a mold, there is a hot press stamper manufacturing technique disclosed in Patent Documents 1 and 2, for example. In the hot press method, a sample is heated with a heater without flowing electricity. However, these hot press stampers have a problem that they cannot be used in the spark plasma sintering method because they are not conductive. That is, in the stamper for hot pressing, diamond is used for wear resistance, but diamond has no conductivity.
また、特許文献３の技術は、放電プラズマ焼結法にてスタンパーを大まかな形状で製作した後、エッチングにより微細パターンを製作し、プレス用の金型を製造している。しかし、微細パターンには数百ｎｍ程度のものと、数十μｍ程度の２類型があり、数百ｎｍ程度の微細パターンは反応性イオンエッチング等のエッチング手法で製造できるものの、数十μｍの微細パターンに関して、特に深さ方向の加工に関しては上述のエッチング手法では製造効率が著しく低下するという課題がある。 In the technique of Patent Document 3, a stamper is manufactured in a rough shape by a discharge plasma sintering method, a fine pattern is manufactured by etching, and a press mold is manufactured. However, there are two types of fine patterns of about several hundreds of nanometers and several types of about several tens of micrometers. Fine patterns of several hundreds of nanometers can be manufactured by an etching technique such as reactive ion etching, but they are fine of several tens of micrometers. Regarding the pattern, particularly with respect to processing in the depth direction, the above-described etching method has a problem that the manufacturing efficiency is remarkably lowered.
これら特許文献１〜３に開示された技術の他に、金型に微細なパターンを描きこれを用いて粉末を押し固めた後、高温にて焼結する手法もある。しかし、これでは微細パターンを製作する工程と焼結する工程が別々になり、製造効率が低下するという課題がある。
さらに、微細なパターンを有する鋳型に溶けた金属（溶湯）を流し込む手法も存在する。しかし、この製造方法では、パンチをバルク材と異なる物質でパターンを作ることはできず、またパンチの材料は金属やプラスチックに限られるため、グラファイトや窒化ケイ素のように例えば１５００℃から２２００℃程度の高温にも耐えられる材料を使用できないという課題がある。
In addition to the techniques disclosed in these Patent Documents 1 to 3, there is also a technique in which a fine pattern is drawn on a mold and the powder is pressed and solidified, followed by sintering at a high temperature. However, in this case, there is a problem that the process of manufacturing the fine pattern and the process of sintering are separated and the manufacturing efficiency is lowered.
Furthermore, there is a method of pouring molten metal (molten metal) into a mold having a fine pattern. However, in this manufacturing method, the punch cannot be patterned with a material different from the bulk material, and since the material of the punch is limited to metal or plastic, for example, about 1500 ° C. to 2200 ° C. like graphite and silicon nitride. There is a problem that a material that can withstand the high temperature cannot be used.
本発明は上記課題を解決するもので、例えば放電プラズマ焼結法に用いて好適な、導電性があって、例えば１５００℃から２２００℃程度の高温にも耐えられる微細なパターンを有する高温用導電性パンチ及びその製造方法を提供することを目的とする。 The present invention solves the above-mentioned problems, and is suitable for use in, for example, a discharge plasma sintering method, and has high conductivity and has a fine pattern that can withstand high temperatures of, for example, about 1500 ° C. to 2200 ° C. It is an object to provide a sex punch and a method for manufacturing the same.
本発明の高温用導電性パンチの金型部の製造方法は、例えば図１、図２に示すように、線の幅が１μｍから１００μｍの範囲の微細パターンを有する成形品を成形するための高温用導電性パンチの金型部の製造方法において、高温用導電性パンチ２０の微細パターン２６形成面を鏡面状に研磨する工程と、高温用導電性パンチ２０の研磨面２２に対して、微細パターン２６形成用の開口覆面部２４を装着する工程と、開口覆面部２４の装着された研磨面２２に対して、エネルギー性彫刻線を照射して、研磨面２２に微細パターン２６を形成する工程を含むことを特徴とする。
また、微細パターン２６形成用の開口覆面部２４装着には電子線リソグラフィー、フォトリソグラフィー、ナノインプリント法を用いても良い。
The manufacturing method of the mold part of the conductive punch for high temperature according to the present invention is, for example, as shown in FIGS. 1 and 2, a high temperature for forming a molded product having a fine pattern with a line width ranging from 1 μm to 100 μm. In the manufacturing method of the die portion of the conductive punch for high temperature, a step of polishing the surface on which the fine pattern 26 of the high temperature conductive punch 20 is formed into a mirror surface, and a fine pattern with respect to the polishing surface 22 of the high temperature conductive punch 20 A step of attaching the opening covering surface portion 24 for forming 26, and a step of irradiating the engraved energetic line on the polishing surface 22 to which the opening covering surface portion 24 is attached to form a fine pattern 26 on the polishing surface 22. It is characterized by including.
In addition, for mounting the opening covering portion 24 for forming the fine pattern 26, electron beam lithography, photolithography, or nanoimprinting may be used.
本発明の高温用導電性パンチの製造方法において、好ましくは、グラファイト、炭化タングステン（ＷＣ）と結合剤（Ｃｏ）とを混合して焼結した超硬合金、導電性セラミックス、耐熱合金のいずれかを高温用導電性パンチの母材として、高温用導電性パンチの成形転写面を形成するとよい。金型高温用導電性パンチの成形転写面は、微細パターン２６形成済みの研磨面２２をいう。
本発明の高温用導電性パンチの製造方法において、好ましくは、研磨面２２に微細パターン２６を形成した後、電子線リソグラフィー、フォトリソグラフィー、ＦＩＢ加工さらには微小な工具で加工荷重が一定の切削加工を行うことで１０ｎｍから１０００ｎｍの範囲の極微細パターンを形成するとよい。
本発明の金型の製造方法において、好ましくは、エネルギー性彫刻線４６は、アルゴンイオンビーム、金属イオンビーム、電子線、光、反応性イオンスパッタビームの何れかであるとよい。
本発明の高温用導電性パンチは、上記の高温用導電性パンチの製造方法によって製作されたものであることを特徴とする。
In the method for producing a conductive punch for high temperature of the present invention, preferably, any one of cemented carbide, conductive ceramics, and heat-resistant alloy obtained by mixing graphite, tungsten carbide (WC) and binder (Co) and sintering. As a base material for the high-temperature conductive punch, the molding transfer surface of the high-temperature conductive punch may be formed. The mold transfer surface of the high temperature conductive punch is the polished surface 22 on which the fine pattern 26 has been formed.
In the method for manufacturing a high-temperature conductive punch according to the present invention, preferably, after a fine pattern 26 is formed on the polishing surface 22, cutting with electron beam lithography, photolithography, FIB processing, or a constant tool with a small tool is performed. It is preferable to form a very fine pattern in the range of 10 nm to 1000 nm by performing the above.
In the mold manufacturing method of the present invention, the energetic engraving line 46 is preferably any one of an argon ion beam, a metal ion beam, an electron beam, light, and a reactive ion sputtering beam.
The high-temperature conductive punch of the present invention is manufactured by the above-described method for manufacturing a high-temperature conductive punch.
本発明の成形品の製造方法は、例えば図３に示すように、成形品３０は上記の製造方法で製造された金型２０を用いて製造されるものであって、成形品３０の周面を形成するためのダイ１０と、このダイ１０の一方の端面に微細パターンを有する高温用導電性パンチ２０を装着し、他方の端面には平面状に研磨された導電性のあるパンチ２９を装着する工程と、微細パターンの寸法と大略同じ程度又は小さな粒径を有する粉末材料４０を、ダイ１０、高温用導電性パンチ２０及びパンチ２９で形成される空間に入れる工程と、ダイ１０、高温用導電性パンチ２０及びパンチ２９で形成される空間に所定荷重の押圧力を加えて、パルス状の高電流を粉末材料４０に印加して、粉末材料４０を焼結する工程と、焼結した粉末材料４０を冷却する工程とで製造されることを特徴とする。 For example, as shown in FIG. 3, the molded product 30 of the present invention is manufactured using the mold 20 manufactured by the above-described manufacturing method, and the peripheral surface of the molded product 30. A die 10 for forming a die and a high-temperature conductive punch 20 having a fine pattern are mounted on one end face of the die 10, and a conductive punch 29 polished in a planar shape is mounted on the other end face. A step of putting a powder material 40 having a particle size approximately equal to or smaller than the size of the fine pattern into a space formed by the die 10, the high-temperature conductive punch 20 and the punch 29, and the die 10, high-temperature A step of applying a pressing force of a predetermined load to the space formed by the conductive punch 20 and the punch 29 and applying a pulsed high current to the powder material 40 to sinter the powder material 40; and the sintered powder Work to cool material 40 Characterized in that it is produced by the.
本発明の成形品の製造方法は、例えば図９に示すように、成形品３０は上記の製造方法で製造された高温用導電性パンチ２０を用いて製造されるものであって、成形品３０の周面を形成するためのダイ１０と、このダイ１０の一方の端面に高温用導電性パンチ２０の微細パターンとは異なる微細パターンを有する高温用導電性パンチ２０ａを装着し、他方の端面には高温用導電性パンチ２０の微細パターンとは異なる微細パターンを有するパンチ２９ｃを装着する工程と、微細パターンの寸法と大略同じ程度又は小さな粒径を有する粉末材料４０を、ダイ１０、高温用導電性パンチ２０ａ及びパンチ２９ｃで形成される空間に入れる工程と、ダイ１０、高温用導電性パンチ２０ａ及びパンチ２９ｃで形成される空間に所定荷重の押圧力を加えて、パルス状の高電流を粉末材料４０に印加して、粉末材料４０を焼結する工程と、焼結した粉末材料４０を冷却する工程とで製造されることを特徴とする。 For example, as shown in FIG. 9, the molded product 30 is manufactured using the high-temperature conductive punch 20 manufactured by the above-described manufacturing method. A die 10 for forming a peripheral surface of the die 10 and a high-temperature conductive punch 20a having a fine pattern different from the fine pattern of the high-temperature conductive punch 20 on one end surface of the die 10 are mounted on the other end surface. Is a step of mounting a punch 29c having a fine pattern different from the fine pattern of the conductive punch 20 for high temperature, and a powder material 40 having a particle size approximately equal to or smaller than the size of the fine pattern, the die 10, high-temperature conductive And applying a predetermined load to the space formed by the die 10, the high temperature conductive punch 20a and the punch 29c. , And a pulsed high current is applied to the powder material 40, the powder material 40 and a step of sintering, characterized in that it is made in the step of cooling the sintered powder material 40.
本発明の成形品の製造方法において、好ましくは、粉末材料４０が金属、金属間化合物、セラミックス、酸化物、炭化物、窒化物、硼化物、フッ化物、サーメット系のいずれか１種類であるとよい。
本発明の成形品は、上記の成形品の製造方法によって製作されたものであることを特徴とする。
In the method for producing a molded article of the present invention, the powder material 40 is preferably any one of a metal, an intermetallic compound, a ceramic, an oxide, a carbide, a nitride, a boride, a fluoride, and a cermet. .
The molded product of the present invention is manufactured by the above-described method for manufacturing a molded product.
本発明の高温用導電性パンチの製造方法では、高温用導電性パンチ金型の研磨面に対して、微細パターン形成用の開口覆面部を装着して、エネルギー性彫刻線を照射して、研磨面に微細パターンを形成するため、導電性があって、例えば１５００℃から２２００℃程度の高温にも耐えられる高温用導電性パンチを製作することができる。
本発明の成形品の製造方法では、成形品（バルク材）に煩雑な工程を行うことなく微細パターンを製作するため、パルス通電加熱により一回の工程で製作することができる。
In the method for producing a high temperature conductive punch according to the present invention, a polishing surface of a high temperature conductive punch mold is attached with an opening covering surface portion for forming a fine pattern, and irradiated with energetic engraving lines for polishing. Since a fine pattern is formed on the surface, it is possible to manufacture a high-temperature conductive punch that is conductive and can withstand high temperatures of, for example, about 1500 ° C. to 2200 ° C.
In the method for producing a molded article of the present invention, a fine pattern can be produced without performing a complicated process on the molded article (bulk material), and therefore, it can be produced in a single process by pulse current heating.
以下、図面を用いて本発明を説明する。
図１は本発明の一実施例を示す高温用導電性パンチの構成斜視図である。
パンチ２０は、大略円筒形や多角柱形を有するもので、グラファイト、ＷＣ（炭化タングステン）、金属、導電性セラミックスを材料としている。パンチの材質としては、高密度のグラファイト、超硬合金、導電性セラミックスのジルコニア(ＺｒＯ2）や絶縁性のセラミックスに導電性粒子を添加し導電性があるセラミックスがあげられる。高密度のグラファイトとしては、例えば密度２．１ｇ／ｃｍ３以上に押し固めたものがある。超硬合金としては、例えば炭化タングステン（ＷＣ）と結合剤（Ｃｏ）とを混合して焼結したものがある。
パンチ２０の端面に設けられる微細パターン形成面２２は、端面の凹凸を1μｍ以下に研磨し、この表面に微細パターン２６を描くのが望ましい。なお、パンチ２０についてセラミックス並みの耐高温性が不要な場合は、水銀、半田、ガリウム等の常温で液体あるいは低融点の金属以外、全ての金属も使用可能である。
Hereinafter, the present invention will be described with reference to the drawings.
FIG. 1 is a structural perspective view of a high-temperature conductive punch showing an embodiment of the present invention.
The punch 20 has a substantially cylindrical shape or a polygonal column shape, and is made of graphite, WC (tungsten carbide), metal, or conductive ceramics. Examples of the material of the punch include high-density graphite, cemented carbide, conductive zirconia (ZrO 2 ), and conductive ceramics by adding conductive particles to insulating ceramics. As high-density graphite, for example, there is one that is pressed to a density of 2.1 g / cm 3 or more. As the cemented carbide, for example, there is one obtained by mixing and sintering tungsten carbide (WC) and a binder (Co).
It is desirable that the fine pattern forming surface 22 provided on the end face of the punch 20 is polished to have an unevenness of 1 μm or less on the end face, and the fine pattern 26 is drawn on this surface. If the punch 20 does not require high-temperature resistance similar to ceramics, all metals other than metals that are liquid or low melting point such as mercury, solder, gallium, etc. can be used.
図２は微細パターン２６を有するパンチの製造過程を示す構成斜視図で、（Ａ）はイオン研磨状態、（Ｂ）は完成品を示してある。
まず、パンチ２０について、焼結時に粉末材料と接する面を鏡面状態まで研磨する。そして、鏡面状態研磨面２２に目的とする微細パターン２６を製作するために、微細パターン２６形成用の開口覆面部２４を装着する。微細パターン２６は、例えば１μｍから１００μｍの範囲のμｍオーダ幅のパターンである。微細パターン２６の幅には、例えば２μｍ、５μｍ、１０μｍ、２０μｍ、５０μｍがある。微細パターン２６の深さは、エネルギー性彫刻線の照射量に依存して定まるもので、例えば０．１μｍから１０μｍの範囲のμｍオーダ深さとする。
FIG. 2 is a structural perspective view showing a manufacturing process of a punch having a fine pattern 26, where (A) shows an ion-polished state and (B) shows a finished product.
First, about the punch 20, the surface which contacts a powder material at the time of sintering is grind | polished to a mirror surface state. Then, in order to manufacture the target fine pattern 26 on the mirror-polished polishing surface 22, an opening covering surface portion 24 for forming the fine pattern 26 is mounted. The fine pattern 26 is a pattern having a width on the order of μm, for example, in the range of 1 μm to 100 μm. The width of the fine pattern 26 includes, for example, 2 μm, 5 μm, 10 μm, 20 μm, and 50 μm. The depth of the fine pattern 26 is determined depending on the irradiation amount of the energetic engraving line and is, for example, a μm order depth in the range of 0.1 μm to 10 μm.
［実施例］
パンチ２０は、直径１０ｍｍのグラファイト製パンチである。金属メッシュ２４は、開口覆面部であり、ここでは直径２５μｍのステンレス鋼線を用いており、網目が５０μｍ間隔のメッシュとなっている。パンチ２０の鏡面状態研磨面２２に金属メッシュ２４を貼り付けてある。
この状態で，イオン研磨装置によりアルゴンイオンを２０ｍＰａ（１．５×１０−４Ｔｏｒｒ）の真空中で２ｋＶの加速電圧で４８時間照射した（図２（Ａ）参照）。パンチ表面２２に５０μｍ間隔で約２５μｍ四方，深さ１０〜１５μｍの正方形の穴（ｈｏｌｅ）を製作した（図２（Ｂ）、図４参照）。
[Example]
The punch 20 is a graphite punch having a diameter of 10 mm. The metal mesh 24 is an opening covering surface portion, and here, a stainless steel wire having a diameter of 25 μm is used, and the mesh is a mesh having an interval of 50 μm. A metal mesh 24 is affixed to the mirror surface polished surface 22 of the punch 20.
In this state, argon ions were irradiated for 48 hours at an acceleration voltage of 2 kV in a vacuum of 20 mPa (1.5 × 10 −4 Torr) by an ion polishing apparatus (see FIG. 2A). Square holes of about 25 μm square and 10 to 15 μm deep were formed on the punch surface 22 at intervals of 50 μm (see FIG. 2B and FIG. 4).
図３は放電プラズマ焼結法による微細パターンの製作過程を説明する概略全体図で、（Ａ）は全体構成図、（Ｂ）は完成した成形品（バルク材）を示している。
ここでは、放電プラズマ焼結法で成形品を製作するために、成形品３０の周面を形成するためのダイ１０と、このダイ１０の一方の端面に微細パターンを有する高温用導電性パンチ２０を装着し、他方の端面には鏡面状に研磨されたパンチ２９を装着する。なお、パンチ２９は、高温用導電性パンチ２０と同じ微細パターンを有するパンチでもよく、又微細パターンと異なる微細パターンを有するパンチでもよい。
3A and 3B are schematic overall views for explaining a process for producing a fine pattern by a discharge plasma sintering method. FIG. 3A is an overall configuration diagram, and FIG. 3B is a completed molded product (bulk material).
Here, in order to manufacture a molded article by the discharge plasma sintering method, a die 10 for forming the peripheral surface of the molded article 30 and a high-temperature conductive punch 20 having a fine pattern on one end face of the die 10 are used. And a punch 29 polished in a mirror shape is attached to the other end face. The punch 29 may be a punch having the same fine pattern as the high-temperature conductive punch 20 or a punch having a fine pattern different from the fine pattern.
この実施例では、パンチ２０を用い、グラファイト製の直径１０ｍｍのダイ１０の中に粉末材料としてのアルミニウム粉末１ｇを入れ、ダイ１０の内周面下部を端面が平坦な通常のパンチ２９と、ダイ１０の内周面上部を上記微細パターンを有するパンチ２０で囲った。次に、荷重４ｋＮでパンチ２０、２９を上下より押さえ、プラズマ放電焼結法によりアルミニウム粉末４０を焼結した。昇温過程はダイ中央部の温度で５００℃まで３分で昇温し、５００℃で１０分間保持し、その後炉冷した。成形品（バルク材）３０には、凸状の微細パターン３２が形成されている。(図３(Ｂ))
図４に製作した微細パターン有するパンチ、図５に製作した微細パターン有するバルク材の走査型電子顕微鏡写真を示してある。図４と図５の走査型電子顕微鏡写真を比較すると、両者が大略同じ模様で、かつ凹凸逆の微細パターンが製作できたことが分かる。
In this embodiment, a punch 20 is used, 1 g of aluminum powder as a powder material is placed in a graphite die 10 having a diameter of 10 mm, and a lower end of the inner peripheral surface of the die 10 is a normal punch 29 having a flat end face, and a die The upper part of the inner peripheral surface of 10 was surrounded by the punch 20 having the fine pattern. Next, the punches 20 and 29 were pressed from above and below with a load of 4 kN, and the aluminum powder 40 was sintered by a plasma discharge sintering method. In the temperature raising process, the temperature in the center of the die was raised to 500 ° C. in 3 minutes, held at 500 ° C. for 10 minutes, and then cooled in the furnace. A convex fine pattern 32 is formed on the molded product (bulk material) 30. (Fig. 3 (B))
FIG. 4 shows a scanning electron micrograph of a punch having a fine pattern manufactured in FIG. 4 and a bulk material having a fine pattern manufactured in FIG. Comparing the scanning electron micrographs of FIG. 4 and FIG. 5, it can be seen that both have substantially the same pattern and a fine pattern with concavity and convexity being reversed.
次に、本発明の放電プラズマ焼結法を用いた成形品（バルク材）の製作にあたり、微細パターンの形状と、粉末材料の形状との関係を説明する。
図６Ａ〜図６Ｃは粉末材料の形状が微細パターンでの溝の幅よりも大きい場合の模式図で、図６Ａは焼結前、図６Ｂは焼結中、図６Ｃはパンチ２０とバルク材３０を剥離した状態である。
粉末材料４０が金属、多孔質のセラミックス、ポリマーである場合には、その粒子直径が微細パターンの溝よりも大きくても、加熱中に変形してパターンを製作することができる。即ち、平坦面では粉末材料４０が、単純に圧縮されて、円盤型の圧縮型異形粉末４２となる。他方、微細パターンの溝では、粉末材料４０が陥入型異形粉末４４となって、溝を埋める形状となる。
Next, in manufacturing a molded article (bulk material) using the discharge plasma sintering method of the present invention, the relationship between the shape of the fine pattern and the shape of the powder material will be described.
6A to 6C are schematic views when the shape of the powder material is larger than the width of the groove in the fine pattern, FIG. 6A is before sintering, FIG. 6B is during sintering, and FIG. 6C is the punch 20 and the bulk material 30. Is in a peeled state.
When the powder material 40 is a metal, a porous ceramic, or a polymer, even if the particle diameter is larger than the groove of the fine pattern, it can be deformed during heating to produce a pattern. That is, on the flat surface, the powder material 40 is simply compressed into a disc-shaped compressed deformed powder 42. On the other hand, in the groove of the fine pattern, the powder material 40 becomes the indented irregularly shaped powder 44 to fill the groove.
図７は異なる物質の粉末で微細パターンを製作する場合の模式図である。予めパンチ２０の微細パターンの溝にバルク材とは異なる物質４１を詰めておき，焼結してバルク材とは異なる物質でパターンを作ることもできる。このように構成すると、バルク材３０の粉末材料４０と比較して、微細パターンの溝形状を正確に転写した凸状の微細パターン３６が得られる。 FIG. 7 is a schematic view when a fine pattern is manufactured with powders of different substances. It is also possible to preliminarily fill the fine pattern grooves of the punch 20 with a material 41 different from the bulk material and sinter it to make a pattern with a material different from the bulk material. If comprised in this way, compared with the powder material 40 of the bulk material 30, the convex fine pattern 36 which correctly transferred the groove shape of the fine pattern is obtained.
図８は本発明の他の実施例を示す微細パターンの製作過程を説明する概略全体図である。この実施形態では、微細パターンのあるパンチ２０に代えて、微細パターンの無いパンチ２７ａと微細パターンを製作してある薄型微細パターン形成部２７ｂで代替してある。薄型微細パターン形成部２７ｂは、導電性のある耐熱材料で製作してある。
この実施形態では、微細パターンの無いパンチ２７ａと粉末材料４０との間に，バルク材よりも融点の高い材料に微細パターンを製作してある薄型微細パターン形成部２７ｂを置き，放電プラズマ焼結することにより、この薄型微細パターン形成部２７ｂの微細パターンをバルク材に転写できる。
FIG. 8 is a schematic overall view for explaining a fine pattern manufacturing process according to another embodiment of the present invention. In this embodiment, instead of the punch 20 having a fine pattern, a punch 27a having no fine pattern and a thin fine pattern forming portion 27b in which a fine pattern is manufactured are substituted. The thin fine pattern forming portion 27b is made of a heat resistant material having conductivity.
In this embodiment, between the punch 27a without a fine pattern and the powder material 40, a thin fine pattern forming portion 27b in which a fine pattern is made of a material having a melting point higher than that of the bulk material is placed, and discharge plasma sintering is performed. Thereby, the fine pattern of the thin fine pattern forming portion 27b can be transferred to the bulk material.
図９は本発明の他の実施例を示す微細パターンの製作過程を説明する概略全体図である。上下のパンチ２０ａ、２９ｃに大略同じ模様の、又は異なった微細パターン２６ａ、２６ｂを製作しておくと，バルク材の両面に大略同じ模様の、又は異なった微細パターン３２ａ、３２ｂを製作することができる。 FIG. 9 is a schematic overall view for explaining a fine pattern manufacturing process according to another embodiment of the present invention. If the upper and lower punches 20a and 29c have substantially the same pattern or different fine patterns 26a and 26b, the substantially same pattern or different fine patterns 32a and 32b can be manufactured on both surfaces of the bulk material. it can.
なお、上記の実施形態においては、パンチ表面への微細パターンの製作方法は、パンチ２０がグラファイトの場合に適するように、開口覆面部（マスク）を置いてイオン研磨する集束イオンビームで直接微細パターンを描く（彫る）場合を示しているが、本発明はこれに限定されるものではなく、要は１μｍから１００μｍの範囲のμｍオーダ幅の微細パターンが描画できればよい。
例えば１０ｎｍから１０００ｎｍの範囲の極微細マスクパターンを描く場合には、ＳＰＭ等を用いて引っかいて製作したり、微細な針などで引っかいて製作するとよい。また、微細パターン形成用の開口覆面部２４装着には電子線リソグラフィー、フォトリソグラフィー、ナノインプリント法を用いてレジストでできた開口覆面部２４を装着しても良い。
In the above embodiment, the method for producing a fine pattern on the punch surface is such that the fine pattern is directly formed by a focused ion beam that is ion-polished by placing an opening covering surface portion (mask) so that the punch 20 is made of graphite. However, the present invention is not limited to this, and it suffices if a fine pattern with a width on the order of 1 μm to 100 μm can be drawn.
For example, when drawing a very fine mask pattern in the range of 10 nm to 1000 nm, it may be manufactured by scratching with an SPM or the like, or by scratching with a fine needle or the like. In addition, the opening covering surface portion 24 for forming a fine pattern may be mounted with an opening covering surface portion 24 made of a resist using electron beam lithography, photolithography, or nanoimprinting.
［比較例］
次に本発明についての比較例を説明する。
図１０は電子線リソグラフィーを用いた微細パターン製作法の説明図で、（Ａ）は試料５０単体、（Ｂ）はレジスト塗布、（Ｃ）は電子線照射、（Ｄ）は現像、（Ｅ）は蒸着、（Ｆ）はレジスト剥離を示している。図１０の電子線リソグラフィーでは、電子線４６ａが照射された部分のレジスト５２が現像によりなくなって、現像残存層５４が残る。現像残存層５４の上に金属層５６が蒸着され、レジスト剥離によって試料５０表面に蒸着された金属層５６がパターン５８として残る。
[Comparative example]
Next, a comparative example regarding the present invention will be described.
FIG. 10 is an explanatory view of a fine pattern manufacturing method using electron beam lithography. (A) is a sample 50 alone, (B) is resist coating, (C) is electron beam irradiation, (D) is development, (E) Indicates vapor deposition, and (F) indicates resist peeling. In the electron beam lithography of FIG. 10, the resist 52 in the portion irradiated with the electron beam 46 a disappears due to development, and the development residual layer 54 remains. A metal layer 56 is vapor-deposited on the development residual layer 54, and the metal layer 56 vapor-deposited on the surface of the sample 50 by resist peeling remains as a pattern 58.
図１１はフォトリソグラフィーを用いた微細パターン製作法の説明図で、（Ａ）は試料６０単体、（Ｂ）はフォトレジスト塗布、（Ｃ）は露光、（Ｄ）は現像、（Ｅ）は蒸着、（Ｆ）はフォトレジスト剥離を示している。図１１のフォトリソグラフィーでは、光（紫外線）４６ｂが照射された部分のうちフォトマスク６４で覆われなかったフォトレジスト６２が現像でなくなる。そこで、フォトマスク６４の定める微細パターンに準拠して、塗布されたフォトレジスト６２が残存パターン６６として試料６０表面に残る。そこで、金属６８を蒸着して、フォトレジスト剥離で残存した金属物質がパターン６８として残る。 FIG. 11 is an explanatory view of a fine pattern manufacturing method using photolithography. (A) is a sample 60 alone, (B) is photoresist coating, (C) is exposure, (D) is development, and (E) is evaporation. , (F) shows the photoresist peeling. In the photolithography of FIG. 11, the photoresist 62 that is not covered with the photomask 64 in the portion irradiated with the light (ultraviolet rays) 46b is not developed. Therefore, the applied photoresist 62 remains on the surface of the sample 60 as a remaining pattern 66 in accordance with the fine pattern defined by the photomask 64. Therefore, the metal 68 is vapor-deposited, and the metal material left by the photoresist removal remains as the pattern 68.
図１２はナノインプリント法を用いた微細パターン製作法の説明図で、（Ａ）は試料片７０単体、（Ｂ）はレジスト塗布、（Ｃ）はスタンピング、（Ｄ）は光（紫外線）照射又は熱印加、（Ｅ）はモールド剥離を示している。図１２のナノインプリント法では、レジスト７２が柔らかいうちにモールド７４と呼ばれる微細パターンの型をレジスト７２に押し当て、紫外線４６ｂ照射あるいは加熱によりレジストを固めて微細パターン７６を製作する方法である。 FIG. 12 is an explanatory view of a fine pattern manufacturing method using the nanoimprint method. (A) is a sample piece 70 alone, (B) is a resist coating, (C) is stamping, (D) is light (ultraviolet) irradiation or heat. Application, (E) shows mold peeling. The nanoimprint method of FIG. 12 is a method in which a fine pattern called a mold 74 is pressed against the resist 72 while the resist 72 is soft, and the resist is solidified by irradiation with ultraviolet rays 46b or heating to produce the fine pattern 76.
上記図１０〜図１２で説明した製法はすべてレジストというポリマーを使うため、バルク材をいったん作成した後で、バルク材上に微細パターンを描画するという二段階の製造工程となる。そこで、本発明の実施例と比較して、比較例の製造工程が複雑になる。例えば１μｍから１００μｍの範囲のμｍオーダ幅の微細パターンを描く場合、例えば、電子線リソグラフィー、フォトリソグラフィー等を用いて製作する。 Since all the manufacturing methods described in FIGS. 10 to 12 use a polymer called a resist, this is a two-stage manufacturing process in which a bulk material is once created and then a fine pattern is drawn on the bulk material. Therefore, the manufacturing process of the comparative example is complicated as compared with the embodiment of the present invention. For example, when a fine pattern having a width of the order of μm in the range of 1 μm to 100 μm is drawn, for example, it is manufactured using electron beam lithography, photolithography, or the like.
［実施例］
また、本発明において、バルク材としては粉末より焼結できるすべての材料の粉末が対象となる。
（ｉ）金属：Ａｌ, Ｔｉ, Ｖ, Ｃｒ, Ｍｎ, Ｆｅ, Ｃｐ, Ｎｉ, Ｃｕ, Ｚｎ, Ｎｂ, Ｍｏ, Ｒｕ, Ｒｈ, Ｐｄ, Ａｇ, Ｃｄ, Ｓｎ, Ｗ, Ｉｒ, Ｐｔ, Ａｕ, Ｐｂ, Ｂｅ など
（ｉｉ）金属間化合物：ＴｉＡｌ, ＭｏＳｉ２, ＳｉＺｒ, ＮｉＡｌ, ＮｂＣｏ, ＮｂＡｌ, ＬａＢａＣｕＯ４, Ｓｍ２Ｃｏ１７
（ｉｉｉ）セラミックス：
（ｉｖ）酸化物：Ａｌ２Ｏ３, ムライト，ＺｎＯ２, ＳｉＯ２, ＨｆＯ２, ＴｉＯ２, ＢａＴＯ３, ＭｇＯ+ＴｉＯ２, ＭｇＯ+ＳＯ２, ２ＭｇＯ+Ａｌ２Ｏ３+５ＳｉＯ２, ３Ａｌ２Ｏ３+２ＳｉＯ２など
（ｖ）炭化物：ＳｉＣ, Ｂ４Ｃ, ＴａＣ, ＴｉＣ, ＷＣ, ＺｒＣ, ＶＣ
（ｖｉ）窒化物：Ｓｉ３Ｎ４, ＴａＮ, ＴｉＮ, ＡｌＮ, ＺｒＮ, ＶＮ
（ｖｉｉ）硼化物：ＴｉＢ２, ＨｆＢ２, ＬａＢ４, ＺｒＢ２, ＶＢ２
（ｖｉｉｉ）フッ化物：ＬｉＦ, ＣaＦ２, ＭｇＦ２
（ｉｘ）サーメット系：Ｓｉ３Ｎ４+Ｎｉ, Ａｌ２Ｏ３+Ｎｉ, ＺｎＯ２+Ｎｉ， Ａｌ２Ｏ３+Ｎｉ, Ａｌ２Ｏ３+ステンレス鋼， ＷＣ/Ｃｏ+ステンレス鋼， ＢＮ+Ｆｅ, ＷＣ+Ｃｏ+Ｆｅなど
（ｘ）ポリマー：ポリエチレン、ポリスチレン、ポリエステル、塩化ビニル、アクリル、エポキシ、ポリイミド
その他、グラファイトの他にパンチの材料となるものは、ＷＣ（炭化タングステン），導電性セラミックス（サイアロン、炭化ケイ素、ホウ化チタン、ジルコニア）および金属とセラミックスの複合材料で導電性を有するものがあげられる。
[Example]
In the present invention, the bulk material includes powders of all materials that can be sintered from the powder.
(I) Metal: Al, Ti, V, Cr, Mn, Fe, Cp, Ni, Cu, Zn, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Sn, W, Ir, Pt, Au, Pb (Ii) Intermetallic compounds: TiAl, MoSi 2 , SiZr, NiAl, NbCo, NbAl, LaBaCuO 4 , Sm 2 Co 17
(Iii) Ceramics:
(Iv) Oxides: Al 2 O 3 , mullite, ZnO 2 , SiO 2 , HfO 2 , TiO 2 , BaTO 3 , MgO + TiO 2 , MgO + SO 2 , 2MgO + Al 2 O 3 + 5SiO 2 , 3Al 2 O 3 + 2SiO 2 etc. (v) Carbides: SiC, B 4 C, TaC, TiC, WC, ZrC, VC
(Vi) Nitride: Si 3 N 4 , TaN, TiN, AlN, ZrN, VN
(Vii) Boride: TiB 2 , HfB 2 , LaB 4 , ZrB 2 , VB 2
(Viii) Fluoride: LiF, CaF 2 , MgF 2
(Ix) Cermet system: Si 3 N 4 + Ni, Al 2 O 3 + Ni, ZnO 2 + Ni, Al 2 O 3 + Ni, Al 2 O 3 + stainless steel, WC / Co + stainless steel, BN + Fe , WC + Co + Fe, etc. (x) Polymer: polyethylene, polystyrene, polyester, vinyl chloride, acrylic, epoxy, polyimide Other than graphite, punch materials include WC (tungsten carbide), conductive ceramics ( Sialon, silicon carbide, titanium boride, zirconia) and metal / ceramic composite materials having conductivity.
本願発明の高温用導電性パンチの製造方法を使用することにより、高温でしか焼結することのできない物質のバルク材でも１回の工程でパターンを形成することができる。また、金型に濡れ性の制御や摩擦の制御のための微細パターンを形成することが容易にでき、当該金型を用いて、金属、セラミックス、樹脂、ガラスに転写して、完成品を大量生産するのに好適である。 By using the method for manufacturing a conductive punch for high temperature according to the present invention, a pattern can be formed in a single process even for a bulk material made of a material that can only be sintered at high temperatures. In addition, it is easy to form fine patterns for wettability control and friction control on the mold, and the mold can be used to transfer to metal, ceramics, resin, and glass for large quantities of finished products. Suitable for production.
１０ ダイ
２０ 高温用導電性パンチ
２２ 鏡面状態研磨面
２４ 金属メッシュ（開口覆面部）
２６、２６ａ、２６ｂ 転写パターン（微細パターン）
２７ａ 微細パターンのないパンチ
２７ｂ 薄型微細パターン形成部
２８ 極微細パターン
２９ パンチ
３０ バルク材（成形品）
３２ 微細パターン転写面
４０ 粉末粒子
４１ バルク材と異なる材料の粉末粒子
４２ 圧縮型異形粉末
４４ 陥入型異形粉末
４６ エネルギー性彫刻線
４６ａ エネルギー性彫刻線（電子線）
４６ｂ エネルギー性彫刻線（光（紫外線））
５０、６０、７０ 試料
５２ レジスト
５４ レジスト（現像残存層）
５６ 蒸着層
５８、６８、７６ パターン
６２ レジスト
６４ レジスト（フォトマスク）
６６ レジスト（残存パターン）
７２ レジスト
７４ モールド
10 Die 20 High-Temperature Conductive Punch 22 Mirror Surface Polishing Surface 24 Metal Mesh (Opening Covering Surface)
26, 26a, 26b Transfer pattern (fine pattern)
27a Punch without fine pattern 27b Thin fine pattern forming part 28 Ultra fine pattern 29 Punch 30 Bulk material (molded product)
32 Fine pattern transfer surface 40 Powder particles 41 Powder particles of a material different from the bulk material 42 Compressed deformed powder 44 Indented deformed powder 46 Energetic engraving line 46a Energetic engraving line (electron beam)
46b Energetic engraving line (light (ultraviolet))
50, 60, 70 Sample 52 Resist 54 Resist (Remaining development layer)
56 Deposition layer 58, 68, 76 Pattern 62 Resist 64 Resist (Photomask)
66 resist (residual pattern)
72 resist 74 mold
Claims (9)
前記高温用導電性パンチの微細パターン形成面を鏡面状に研磨する工程と、
前記高温用導電性パンチの研磨面に対して、前記微細パターン形成用の開口覆面部を装着する工程と、
前記開口覆面部の装着された前記研磨面に対して、エネルギー性彫刻線を照射して、前記研磨面に前記微細パターンを形成する工程を含むことを特徴とする高温用導電性パンチの製造方法。 In the method for producing a conductive punch for high temperature for forming a molded product having a fine pattern in the range of 1 μm to 100 μm,
Polishing the fine pattern forming surface of the high-temperature conductive punch into a mirror shape;
Attaching the opening covering surface portion for forming the fine pattern to the polishing surface of the high-temperature conductive punch;
A method for producing a conductive punch for high temperature, comprising the step of irradiating an energetic engraving line on the polishing surface on which the opening covering portion is mounted to form the fine pattern on the polishing surface .
前記成形品の周面を形成するためのダイと、このダイの一方の端面に前記微細パターンを有する高温用導電性パンチを装着し、他方の端面には平面状に研磨されたパンチ、前記微細パターンを有するパンチ、又は前記微細パターンと異なる微細パターンを有するパンチの何れか一つを装着する工程と、
前記微細パターンの寸法と大略同じ程度又は小さな粒径を有する粉末材料を、前記ダイ、高温用導電性パンチ及びパンチで形成される空間に入れる工程と、 前記ダイ、高温用導電性パンチ及びパンチで形成される空間に所定荷重の押圧力を加えて、パルス状の高電流を前記粉末材料に印加して、前記粉末材料を焼結する工程と、
前記焼結した粉末材料を冷却する工程と、
で製造されることを特徴とする成形品の製造方法。 The molded product is manufactured using the high temperature conductive punch manufactured by the method for manufacturing a high temperature conductive punch according to claims 1 to 5,
A die for forming the peripheral surface of the molded product, a high-temperature conductive punch having the fine pattern on one end face of the die, and a finely polished punch on the other end face, the fine Mounting any one of a punch having a pattern or a punch having a fine pattern different from the fine pattern;
A step of putting a powder material having a particle size substantially equal to or smaller than the size of the fine pattern into a space formed by the die, the high-temperature conductive punch and the punch, and the die, the high-temperature conductive punch and the punch, Applying a pressing force of a predetermined load to the space to be formed, applying a pulsed high current to the powder material, and sintering the powder material; and
Cooling the sintered powder material;
The manufacturing method of the molded article characterized by being manufactured by.
A molded article produced by the method for producing a molded article according to claim 7 or 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012263019A JP2014109044A (en) | 2012-11-30 | 2012-11-30 | Conductive punch for high temperature and method of producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012263019A JP2014109044A (en) | 2012-11-30 | 2012-11-30 | Conductive punch for high temperature and method of producing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2014109044A true JP2014109044A (en) | 2014-06-12 |
Family
ID=51029859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012263019A Pending JP2014109044A (en) | 2012-11-30 | 2012-11-30 | Conductive punch for high temperature and method of producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2014109044A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019059981A (en) * | 2017-09-26 | 2019-04-18 | 国立大学法人東京工業大学 | Method of manufacturing precision micro-molded article of super hard material |
| CN114274249A (en) * | 2021-12-24 | 2022-04-05 | 厦门华天华电子有限公司 | Processing method of FPC die punch |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001277252A (en) * | 2000-03-30 | 2001-10-09 | Suwa Netsukogyo Kk | Method for producing cavity forming mold, cavity forming mold, and resin molding |
| JP2004017477A (en) * | 2002-06-17 | 2004-01-22 | Sony Corp | Method for manufacturing optical parts and method for manufacturing mold for optical parts |
| JP2005309441A (en) * | 2004-04-23 | 2005-11-04 | Schott Ag | Method for producing master, master, method for producing optical element, and optical element |
-
2012
- 2012-11-30 JP JP2012263019A patent/JP2014109044A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001277252A (en) * | 2000-03-30 | 2001-10-09 | Suwa Netsukogyo Kk | Method for producing cavity forming mold, cavity forming mold, and resin molding |
| JP2004017477A (en) * | 2002-06-17 | 2004-01-22 | Sony Corp | Method for manufacturing optical parts and method for manufacturing mold for optical parts |
| JP2005309441A (en) * | 2004-04-23 | 2005-11-04 | Schott Ag | Method for producing master, master, method for producing optical element, and optical element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019059981A (en) * | 2017-09-26 | 2019-04-18 | 国立大学法人東京工業大学 | Method of manufacturing precision micro-molded article of super hard material |
| CN114274249A (en) * | 2021-12-24 | 2022-04-05 | 厦门华天华电子有限公司 | Processing method of FPC die punch |
| CN114274249B (en) * | 2021-12-24 | 2024-02-02 | 厦门华天华电子有限公司 | Processing method of FPC die punch |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zauner | Micro powder injection moulding | |
| KR20200101984A (en) | Fabrication of bulk metallic glass composites using powder-based additive manufacturing | |
| CN103502490A (en) | Method for manufacturing a part having a complex shape by flash sintering, and device for implementing such a method | |
| WO2004011696A1 (en) | Electrode for electric discharge surface treatment, electric discharge surface treatment method and electric discharge surface treatment apparatus | |
| JP6933206B2 (en) | Manufacturing method of composite member and composite member | |
| KR20240063946A (en) | Titanium porous body and method for producing the titanium porous body | |
| JP2014109044A (en) | Conductive punch for high temperature and method of producing the same | |
| JP7092960B1 (en) | Manufacturing method of porous metal body and porous metal body | |
| Mekaru | Formation of metal nanostructures by high-temperature imprinting | |
| JP4354264B2 (en) | FORMING MEMBER HAVING HEAT-RESISTANT CARBON FILM AND ITS MANUFACTURING METHOD | |
| JP5799393B2 (en) | Ni-W electroforming liquid for molding dies, method for producing molding dies, method for producing molding dies and molded products | |
| CN106663605A (en) | Encapsulated composite backing plate | |
| CN100450703C (en) | molding method | |
| JP2001295035A5 (en) | ||
| JP2003221244A5 (en) | ||
| JP2007217723A (en) | Method for manufacturing pressure-sintered target material | |
| KR100947331B1 (en) | Thin film structure of lens mold core having reinforcement layer with improved service life and forming method thereof | |
| KR101782860B1 (en) | NANOSTRUCTURED WC-Al HARD MATERIALS AND FABRICATING METHOD FOR THE SAME | |
| JP4942131B2 (en) | Stamper and nanostructure transfer method using the same | |
| JP2002348129A (en) | Method for manufacturing molding die for optical glass element and method for molding optical glass element | |
| JP6423056B1 (en) | Imprint mold and method for producing imprint mold | |
| JP2006147727A (en) | Zr-Cu metal glass alloy mold for ultra fine pattern transfer | |
| Martinez-Duarte et al. | A novel method for amorphous metal micromolding using carbon MEMS | |
| JP7078969B2 (en) | How to manufacture precision micromolded products of ultra-hard materials | |
| JP2007111824A (en) | Method and device for machining workpiece |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151014 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160629 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160705 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160831 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20161129 |