JP2014070237A - Plasma cvd device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma CVD device capable of efficiently, economically and effectively laminating a plasma CVD layer on a substrate surface while restraining the plasma CVD layer from being adhered to a portion other than the substrate surface as much as possible.SOLUTION: Cover cylinder parts 60, 62, 64 are arranged in a reaction chamber 22 to surround a periphery of the blowing port 52 of a plasma generation part 24 and extend in a blowing direction of plasma from a blowing port 52. Also, gas introduction means 90, 92, 98, 100 having introduction ports 94, 96 for introducing a gas component contained in film depositing gas for forming a plasma CVD film to inside of the cover cylinder parts 62, 64 are provided in the reaction chamber 22. The gas component contained in the film depositing gas is brought into contact with plasma blown from the blowing port 52 inside the cover cylinder parts 62, 64.

Description

  The present invention relates to a plasma CVD apparatus, and more particularly to an improvement of a plasma CVD apparatus used for forming a plasma CVD layer on a surface of a substrate by plasma CVD.

  Conventionally, a plasma CVD method using plasma is known as one of methods for forming a thin film on the surface of a base material made of various materials. Various apparatuses are also available for forming a thin-film plasma CVD layer on the substrate surface by performing this plasma CVD method. For example, a parallel plate type plasma CVD apparatus disclosed in Japanese Patent Application Laid-Open No. 2009-120881 (Patent Document 1), an inductively coupled plasma CVD apparatus disclosed in Japanese Patent Application Laid-Open No. 2005-248327, etc. That's it.

  As is well known, a parallel plate type plasma CVD apparatus includes a reaction chamber in which a substrate is accommodated, and a pair of flat plate-like plasma generation electrodes arranged to face each other in the reaction chamber so as to extend in parallel to each other. And is configured. On the other hand, the inductively coupled plasma CVD apparatus includes a reaction chamber in which a substrate is accommodated and a high frequency induction antenna disposed outside the reaction chamber. The parallel plate type plasma CVD apparatus and the inductively coupled plasma CVD apparatus have a high frequency power supply between a pair of plasma generating electrodes and a high frequency induction antenna in a state where a film forming gas is supplied into the reaction chamber. By applying the power from, the plasma of the source gas contained in the film forming gas and the plasma of the reactive gas are generated in the reaction chamber, and the plasma is further reacted to generate a predetermined product. Then, by depositing it on the surface of the substrate, a plasma CVD layer made of such a product is laminated.

  In such a parallel plate type plasma CVD apparatus and an inductively coupled plasma CVD apparatus, since the film-forming gas (source gas and reaction gas) converted into plasma is dispersed throughout the reaction chamber, plasma is generated. There is an advantage that the CVD layer can be laminated and formed all at once on the entire surface of the substrate having a large area. However, on the other hand, the product generated by the reaction of the plasma of the film forming gas by the plasma CVD method adheres to the inner surface of the reaction chamber, the electrode disposed in the reaction chamber, the support member that supports the substrate, or the like. This was unavoidable and therefore it was necessary to perform extra work to remove them.

  Under such circumstances, for example, Japanese Patent Laid-Open No. 2001-220680 (Patent Document 3) discloses a plasma CVD apparatus capable of suppressing adhesion of a product (plasma CVD layer) other than the substrate surface.

  This plasma CVD apparatus includes a reaction chamber that accommodates a substrate, a plasma generation unit that generates plasma, and a blowout port that blows out plasma generated in the plasma generation unit into the reaction chamber. When a plasma CVD layer is formed on the surface of a substrate using such a plasma CVD apparatus, for example, first, the reaction chamber containing the substrate is evacuated while an inert gas such as argon gas is used. Is introduced into the plasma generator, and argon plasma is generated in the plasma generator. Then, the argon plasma is blown out from the plasma generation section through the blowout port into the vacuumed reaction chamber, while a film forming gas for forming a plasma CVD layer is supplied into the reaction chamber to form a film. The gas is contacted with an argon plasma. Thereby, the raw material gas and the reactive gas contained in the film forming gas are converted into plasma, and the plasma of the raw material gas and the reactive gas plasma are reacted by the plasma CVD method. Then, the product produced by such a reaction is deposited on the surface of the substrate, and a plasma CVD layer is laminated on the surface of the substrate.

  In addition, when forming a plasma CVD layer using such a plasma CVD apparatus, some gas components contained in the film forming gas may be introduced into the plasma generating portion instead of the inert gas. . In this case, a part of the gas component contained in the film forming gas is converted into plasma by the plasma generation unit, and the plasma is blown out from the plasma generation unit through the blowout port into the reaction chamber, while being supplied into the reaction chamber. Other gas components of the film forming gas to be supplied are supplied, and such other gas components are brought into plasma by bringing them into contact with plasma. Then, these plasma gas components are reacted with each other by the plasma CVD method to form a plasma CVD layer on the surface of the base material in the reaction chamber.

  As described above, the conventional plasma CVD apparatus disclosed in the above publication uses the plasma blown from the plasma generation unit to the reaction chamber through the blowout port, on the surface of the base material accommodated in the reaction chamber, A plasma CVD layer is formed. In such a plasma CVD apparatus, since the plasma is blown out from the blower outlet toward the substrate surface, the dispersion of the film forming gas plasma throughout the reaction chamber is advantageously suppressed, and the plasma CVD method is used. The product produced by the reaction is concentrated on the substrate surface. As a result, it is possible to prevent the product from adhering to the inner surface of the reaction chamber, the support member that supports the substrate, and the like as much as possible.

  However, regarding the so-called plasma blowing type plasma CVD apparatus having the structure as described above, in which plasma is blown out from the plasma generating unit, the present inventors have studied from various angles. Such problems were found to be inherent.

  That is, in a conventional plasma blowing type plasma CVD apparatus, a gas introduction pipe for introducing a film forming gas for forming a plasma CVD layer into the reaction chamber penetrates the side wall of the reaction chamber, and the tip of the gas introduction pipe enters the reaction chamber. It is installed to open. Then, the film forming gas for forming the plasma CVD layer is released from the side from the front end opening of the gas introduction pipe into the reaction chamber and toward the plasma blown into the reaction chamber through the outlet. It has become. Therefore, in such a conventional plasma blowing type plasma CVD apparatus, a part of the film forming gas for forming the plasma CVD layer is brought into the reaction chamber before coming into contact with the plasma blown from the blowout port. Diffusing was inevitable. The film forming gas diffused in the reaction chamber before contact with the plasma is not used for the reaction by the plasma CVD method, but is exhausted to the outside by a vacuum pump or the like and is wasted. This was revealed by the inventors' research.

JP 2009-120881 A JP 2005-248327 A JP 2001-220680 A

  Here, the present invention has been made in the background as described above, and the problem to be solved is to suppress the adhesion of the plasma CVD layer to other than the substrate surface as much as possible. A plasma CVD apparatus that can effectively use a film forming gas for forming a plasma CVD layer without waste, and can efficiently and economically and advantageously form a plasma CVD layer on a substrate surface. Is to provide.

  And in this invention, in order to solve this subject, the reaction chamber which accommodates a base material, the plasma generation part which generate | occur | produces a plasma, and the plasma generated in this plasma generation part are blown out in this reaction chamber A plasma CVD apparatus for forming a plasma CVD film on the surface of the substrate by using plasma blown from the plasma generation unit into the reaction chamber through the blow outlet, A cover cylinder portion disposed in the reaction chamber so as to surround the blow-out port and extend in the direction of blowing the plasma from the blow-out port into the reaction chamber; and (b) an inner side of the cover cylinder portion. And introducing a gas component contained in the film-forming gas for forming the plasma CVD film into the inside of the cover tube portion through the inlet, thereby blowing the gas from the outlet. To the plasma issued, the said gas component plasma CVD apparatus characterized by being configured to include a gas introducing means for contacting the inside of the cover cylinder portion is for its gist.

  In addition, according to one of the preferable aspects of the present invention, the plurality of cover tube portions are provided, and the plurality of cover tube portions are arranged apart from each other in the direction perpendicular to the axis and in the direction perpendicular to the axis. The cover cylinder part located outside of the two cover cylinder parts located adjacent to the inside and outside is disposed so as to surround at least the opening on the front end side in the extending direction of the cover cylinder part located on the inside. Further, the gas introduction means is configured to have a plurality of introduction ports positioned inside each of the plurality of cover tube portions.

  Further, according to one of the advantageous aspects of the present invention, different types of gas components contained in the film-forming gas pass through the plurality of inlets inside each of the plurality of cover tube portions. Each is configured to be introduced separately.

  Furthermore, according to one of the desirable aspects of the present invention, at least the innermost cover tube portion of the plurality of cover tube portions surrounds the blowout port, and the blowout port extends from the reaction chamber to the reaction chamber. An inlet for the gas introduction means is disposed inside the cover cylinder part excluding the innermost cover cylinder part among the plurality of cover cylinder parts. Each is arranged.

  Furthermore, according to one of the preferable aspects of the present invention, the changing means for changing the extension length of the cover cylinder part from the outlet by displacing the cover cylinder part in the axial direction is further provided. Provided.

  That is, in the plasma CVD apparatus according to the present invention, the gas component contained in the film-forming gas for forming the plasma CVD layer is formed on the inside of the cover cylinder portion that extends around the outlet from which the plasma is blown out. It is introduced by introduction means. For this reason, while preventing the gas component of the film forming gas from diffusing into the reaction chamber by the cover tube portion, all or most of the gas component is blown out from the outlet inside the cover tube portion. Can be contacted with.

  Therefore, in the plasma CVD apparatus according to the present invention, the gas component of the film forming gas introduced by the gas introducing means can be discharged to the outside as it is without being converted into plasma. It can be prevented as much as possible. Further, in such a plasma CVD apparatus, the plasma generated in the plasma generating part is blown out from the blower outlet toward the substrate surface in the reaction chamber, so that the product generated by the reaction by the plasma CVD method is not limited to the inner surface of the reaction chamber. It can be prevented as much as possible from adhering to a support member that supports the substrate.

  Therefore, if the plasma CVD apparatus according to the present invention as described above is used, the deposition gas for forming the plasma CVD layer is effectively used without waste while suppressing the adhesion of the plasma CVD layer to other than the substrate surface as much as possible. Therefore, the plasma CVD layer can be efficiently and economically laminated on the substrate surface.

It is a fragmentary longitudinal cross-section explanatory drawing which shows an example of the resin product obtained using the plasma CVD apparatus which has a structure according to this invention. It is longitudinal cross-sectional explanatory drawing which shows one Embodiment of the plasma CVD apparatus which has a structure according to this invention. It is a figure corresponding to FIG. 2 which shows another embodiment of the plasma CVD apparatus which has a structure according to this invention. It is a figure corresponding to FIG. 2 which shows another embodiment of the plasma CVD apparatus which has a structure according to this invention.

  Hereinafter, in order to clarify the present invention more specifically, embodiments of the present invention will be described in detail with reference to the drawings.

  First, FIG. 1 shows a resin glass 10 for a rear window of an automobile as a resin product obtained by using a plasma CVD apparatus having a structure according to the present invention in a partial vertical sectional form. As is clear from FIG. 1, the resin glass 10 has a substrate 12 as a base material, and an undercoat layer 14 is laminated on the surface of the substrate 12 (the upper surface in FIG. 1). Further, a top coat layer 16 is laminated on the surface of the undercoat layer 14 opposite to the substrate 12 side. In the following, for convenience, the upper surface in FIG. 1 is referred to as the front surface, and the lower surface in FIG. 1 is referred to as the back surface.

  The substrate 12 has a transparent flat plate shape and is formed of a resin molded product that is injection-molded using polycarbonate. The substrate 12 may be formed by a method other than injection molding.

  The undercoat layer 14 is directly laminated so as to cover the entire surface of the substrate 12 for the purpose of giving the resin glass 10 weather resistance based on ultraviolet resistance or the like. In a thin film form. In general, such an undercoat layer 14 is formed by coating a liquid acrylic resin or polyurethane resin on the surface of the substrate 12 to form a coating film, and then heating the coating film by applying a heating operation or ultraviolet irradiation. Is formed. The undercoat layer 14 is preferably composed of an ultraviolet curable film in order to simplify and speed up the forming process and reduce the equipment cost required for forming the undercoat layer 14. The undercoat layer 14 can also be formed by employing a resin material or a curing method other than the above examples as long as it has weather resistance. Further, the undercoat layer 14 may have a single layer structure or a multilayer structure in which a plurality of layers are laminated.

The top coat layer 16 has an entire surface on the surface opposite to the substrate 12 side of the undercoat layer 14 in order to impart abrasion resistance (abrasion resistance and scratch resistance) to the resin glass 10. It is laminated and formed so as to cover, and has a thin film form. Here, the top coat layer 16 is composed of a SiO ₂ plasma CVD layer that exhibits excellent abrasion resistance. The material for forming the top coat layer 16 is not particularly limited as long as it can provide sufficient abrasion resistance to the resin glass 10, but generally, in addition to SiO ₂ , SiON and Si A silicon compound such as ₃ N ₄ is used. The topcoat layer 16 may have a single layer structure or a multilayer structure in which a plurality of layers are laminated.

  The resin glass 10 having such excellent characteristics is formed, for example, by forming an undercoat layer 14 on a polycarbonate substrate 12 to produce an intermediate product 18, and thereafter, an undercoat layer of the intermediate product 18. The top coat layer 16 is formed on the surface 14, and when the top coat layer 16 is formed, a plasma CVD apparatus having a structure according to the present invention is advantageously used.

  FIG. 2 shows an embodiment of a plasma CVD apparatus having a structure according to the present invention in the form of a longitudinal section. As is clear from FIG. 2, the plasma CVD apparatus 20 of this embodiment includes a vacuum chamber 22 as a reaction chamber and a plasma generator 24 as a plasma generation unit fixed to the vacuum chamber 22. doing. In the plasma CVD apparatus 20, the undercoat of the intermediate product 18 accommodated in the vacuum chamber 22 is generated using the plasma generated in the plasma generator 24 and supplied into the vacuum chamber 22. A plasma CVD layer is laminated on the layer 14.

  More specifically, the vacuum chamber 22 further includes a chamber body 26 and a lid 28. The chamber body 26 has a bottomed cylindrical shape or a casing shape including a cylindrical side wall portion 30 and a lower bottom wall portion 32 that closes a lower opening of the side wall portion 30.

  A substrate holder 34 is disposed on the inner surface of the lower bottom wall portion 32 of the chamber body 26. The substrate holder 34 has a flat plate shape as a whole, and is fixed in a state in which one plate surface is overlapped with the inner surface of the lower bottom wall portion 32. Further, the upper surface formed of the other plate surface of the substrate holder 34 is a support surface 36.

  In this embodiment, the intermediate product 18 is supported on the support surface 36 of the substrate holder 34 in a state where the back surface of the substrate 12 opposite to the side on which the undercoat layer 14 is formed is overlapped. It has become. That is, the substrate 12 is held by the substrate holder 34 with the surface of the undercoat layer 14 opposite to the substrate 12 facing upward and exposed in the chamber body 26. It is.

  An exhaust pipe 38 is provided at one location on the circumference at the lower end of the side wall 30 of the chamber body 26 so as to penetrate the side wall 30 so as to communicate with the inside and outside of the chamber main body 26. A vacuum pump 40 is installed on the exhaust pipe 38.

  The lid body 28 is configured by a flat plate having a size capable of covering the entire upper opening 42 of the chamber body 26. A mounting cylinder portion 44 is fixed on the upper surface of the lid 28. The mounting cylinder portion 44 has an upper bottom wall portion 46 and opens downward, and has a cylindrical shape with a bottom on one side as a whole.

  In the chamber body 26, the upper opening 42 is covered with the lid 28 by overlapping the lid 28 with the upper end surface of the side wall 30 of the chamber body 26 at the outer peripheral portion of the lower surface thereof. It has become. In addition, under the cover, the lid 28 is locked to the side wall 30 by a lock mechanism (not shown), so that the chamber body 26 is hermetically sealed. Further, by the operation of the vacuum pump 40 in the sealed state of the chamber body 26, the gas in the chamber body 26 is discharged to the outside through the exhaust pipe 38, and the inside of the chamber body 26 is decompressed. Yes. ,

  A plasma generator 24 is fixed to the lid 28 of the vacuum chamber 22 having such a structure. The plasma generator 24 has a known structure similar to a plasma generation chamber provided in a plasma CVD apparatus disclosed in, for example, Japanese Patent Application Laid-Open No. 2001-220680.

  That is, although not clearly shown in FIG. 2, a pair of plasma generating electrodes having a flat plate shape are disposed in the plasma generator 24 so as to face each other with a predetermined distance therebetween. As shown in FIG. 2, a high frequency power supply 48 is connected to the plasma generator 24, and this high frequency power supply 48 is connected to a pair of plasma generating electrodes (not shown) built in the plasma generator. It is electrically connected to one of them. The plasma generator 24 is provided with an inert gas introduction pipe 50 for introducing an inert gas such as argon gas between the pair of plasma generation electrodes. Furthermore, the lower end part of the plasma generator 24 is provided with an outlet 52 for blowing out the plasma generated by the plasma generator 24 downward.

  Such a plasma generator 24 is disposed so as to extend vertically in the mounting cylinder portion 44 through the circular center hole 56 of the mounting cylinder portion 44 fixed to the upper surface of the lid 28. . Further, the lower end portion of the plasma generator 24 is inserted into the chamber body 26 through a large-diameter circular insertion hole 54 formed in the central portion of the lid 28 of the vacuum chamber 22. . Then, in such an arrangement state, it is attached to the attachment cylinder portion 44 by being screwed to a cylindrical boss portion 58 projecting around the central hole 56 on the upper surface of the attachment cylinder portion 44. ing. Further, in the plasma generator 24 attached to the attachment cylinder portion 44 as described above, the air outlet 52 is substantially at the center of the support surface 36 of the substrate holder 34 fixed to the lower bottom wall portion 32 of the chamber body 26. It is arranged above the part so as to open downward at a predetermined distance from the part.

  Thus, in the plasma generator 24, the argon gas is introduced between the pair of plasma generation electrodes through the inert gas introduction pipe 50, and the electric power from the high frequency power supply 48 is interposed between the pair of plasma generation electrodes. Is applied to generate an argon plasma gas. Further, the argon plasma gas thus generated is blown out from the blowout port 52 toward the substantially central portion of the support surface 36 of the substrate holder 34 in the chamber body 26.

  In the plasma CVD apparatus 20 of the present embodiment, in particular, the plasma generation in which the first, second, and third cover cylinder portions 60, 62, 64 are plunged into the chamber body 26 through the circular insertion holes 54. The device 24 is coaxially disposed in the chamber body 26 so as to surround the lower end portion of the device 24.

  More specifically, the first cover cylinder portion 60 has a cylindrical shape as a whole, and has an inner diameter larger than the outer diameter of the plasma generator 24 having a cylindrical outer peripheral surface, and a chamber main body of the plasma generator 24. 26 has a length in the axial direction that is longer than the length of the site of entry into 26. Further, in the first cover tube portion 60, the upper end side portion is a ring-shaped attachment portion 66 having a thicker thickness and a smaller inner diameter than other portions.

  Then, such a first cover cylinder portion 60 is arranged on the lower end portion of the plasma generator 24 that is plunged into the chamber body 26. Further, under such an arrangement state, the ring-shaped attachment portion 66 provided at the upper end portion of the first cover tube portion 60 is press-fitted to the plasma generator 24 and fixed, and the first The lower end portion of the cover tube portion 60 is positioned so as to extend downward from the lower end surface of the plasma generator 24.

  Thus, the first cover cylinder portion 60 is disposed in the chamber body 26 so as not to move on the same axis as the lower end portion of the plasma generator 24. And this 1st cover cylinder part 60 becomes the blowing direction of the plasma blown off from the blower outlet 52, covering the circumference | surroundings of the blower outlet 52 provided in the lower end surface of the plasma generator 24 from the outer side. It extends downward.

  Thereby, as shown by the arrow in FIG. 2, the plasma is blown out from the blowout port 52 to the inside of the first cover cylinder part 60. Of the plasma blown out from the blowout port 52, a part of the plasma blown out to the side collides with the inner peripheral surface of the first cover cylinder part 60, so that the plasma blown out from the blowout port 52. Is prevented from being diffused into the chamber body 26 as much as possible.

  On the other hand, the second cover tube portion 62 has substantially the same thickness as the thin portion of the first cover tube portion 60, an axial length longer than the entire length of the first cover tube portion 60, and the first cover tube portion The cylindrical shape which has an internal diameter larger than the outer diameter of the part 60 is exhibited. Then, such a second cover cylinder part 62 is disposed around the first cover cylinder part 60 in the chamber body 26, coaxially with it and spaced outward in the direction perpendicular to the axis, and the lower surface of the lid body 28. It is arranged so as to be movable in the vertical direction while extending downward from the top. Further, under such an arrangement state, the upper end side portion of the second cover cylinder portion 62 is inserted through the circular insertion hole 54 of the lid body 28 and protrudes upward from the lid body 28, thereby The upper end portion of the cover tube portion 62 is inserted into the mounting tube portion 44 fixed on the lid 28.

  The third cover cylinder part 64 has substantially the same thickness as the second cover cylinder part 62, an axial length longer than the entire length of the second cover cylinder part 62, and an outside of the second cover cylinder part 62. It has a cylindrical shape having an inner diameter larger than the diameter. Such a third cover cylinder portion 64 is disposed in the chamber body 26 around the second cover cylinder portion 62, coaxially therewith and outwardly in the direction perpendicular to the axis, and downward from the lower surface of the lid body 28. It is arranged so as to be movable in the vertical direction. Further, under such an arrangement state, the upper end side portion of the third cover cylinder portion 64 is inserted through the circular insertion hole 54 of the lid body 28 and protrudes upward from the lid body 28, thereby The upper end portion of the cover tube portion 64 is disposed so as to protrude into the mounting tube portion 44 fixed on the lid 28.

  And the 2nd cover cylinder part in which each upper end part inserted and arranged in the attachment cylinder part 44 of these 2nd cover cylinder parts 62 and the 3rd cover cylinder part 64 was provided in the attachment cylinder part 44 The first moving unit 68 for moving the 62 in the vertical direction and the second moving unit 70 for moving the third cover cylinder part 64 in the vertical direction are connected to each other.

  The first moving unit 68 and the second moving unit 70 are provided with a casing 72, a drive motor 74, a long screw shaft 76, and a female screw member 78, although the arrangement positions in the mounting cylinder portion 44 are different from each other. Have the same structure. Therefore, only the structure of the first moving unit 68 will be specifically described below, and a detailed description of the structure of the second moving unit 70 will be omitted.

  The casing 72 included in the first moving unit 68 is formed of a longitudinal rectangular housing. The casing 72 is erected on the upper surface of the lid body 28 so as to extend in the vertical direction outside the upper end portion of the third cover cylinder portion 64 that is inserted into the attachment cylinder portion 44. . Further, the casing 72 is formed with an opening 80 extending in the up-down direction and opening toward the plasma generator 24 side, which is disposed so as to extend in the up-down direction at the center in the mounting cylinder portion 44. . The drive motor 74 is composed of, for example, a servo motor that can rotate in a forward / reverse direction by a desired rotation angle, and is fixed to the upper end portion of the casing 72 with a drive shaft (not shown) protruding downward. . The screw shaft 76 is disposed in the casing 72 so as to extend in the vertical direction. The screw shaft 76 is fixed at its upper end to a drive shaft (not shown) of the drive motor 74, while the lower end can rotate around the central axis with respect to the lower end of the casing 72. Further, it is supported so as not to move in the central axis direction. The female screw member 78 is screwed onto the screw shaft 76 and arranged. Further, the female screw member 78 is slid onto two inner peripheral surface portions extending in the vertical direction opposite to the horizontal direction on the inner peripheral surface of the opening 80 of the casing 72 under the screwed state to the screw shaft 76. It is movably in contact and a part projects to the side of the casing 72 through the opening 80. Thereby, although the internal thread member 78 can move to the axial direction of the screw shaft 76, it cannot be rotated.

  In the first moving unit 68, the screw shaft 76 rotates in the forward / reverse direction as the drive motor 74 rotates in the forward / reverse direction. Further, the female screw member 78 moves toward both axial sides of the screw shaft 76 by such rotation of the screw shaft 76 in the forward and reverse directions. That is, the first moving unit 68 includes a screw feed mechanism including a drive motor 74, a screw shaft 76, and a female screw member 78. Then, the second cover cylinder part 62 that is disposed so as to protrude into the attachment cylinder part 44 with respect to the protruding part of the female screw member 78 of the first moving unit 68 having the above structure from the casing 72 to the side. The upper end is fixed and attached.

  Here, a longitudinal notch 82 that opens in the upper end surface and extends in the axial direction is provided at one location on the circumference of the third cover cylinder portion 64. A protruding portion of the female screw member 78 of the first moving unit 68 that extends laterally from the casing 72 reaches the upper end of the second cover cylinder portion 62 through the cutout portion 82. Further, the axial length of the notch 82 is made larger than the vertical movement stroke of the third cover cylinder 64 by the second moving unit 70.

  On the other hand, as described above, the second moving unit 70 has the same structure as that of the first moving unit 68, and within the mounting cylinder portion 44, the plasma generating device 24 and the outer side perpendicular to the axis thereof. The second cover cylinder 62 and the upper ends of the third cover cylinder 64, which are spaced apart from each other, are disposed on the opposite side of the first moving unit 68. And the upper end part of the 3rd cover cylinder part 64 protruded and arrange | positioned in the attachment cylinder part 44 with respect to the protrusion part to the side from the casing 72 of the internal thread member 78 of this 2nd moving unit 70 is fixed. ing.

  Here, a servo mechanism is configured by the drive motors 74 of the first and second moving units 68 and 70, the command unit 84 and the control unit 86 installed outside the vacuum chamber 22. The command unit 84 outputs an instruction signal that instructs the rotation direction and the rotation angle of each drive motor 74 to the control unit 86. The control unit 86 outputs a control signal for controlling the operation of each drive motor 74 to each drive motor 74 in accordance with an instruction signal from the command unit 84. Each drive motor 74 includes a known angle detection sensor (not shown) for detecting the rotation angle.

  Then, by such a servo mechanism constituted by the command unit 84, the control unit 86, and each drive motor 74, each drive motor 74 can be arbitrarily input in any direction input from the command unit 84 to the control unit 86. The internal thread members 78 of the first and second moving units 68 and 70 are rotated in any direction up and down in accordance with the rotational drive of each drive motor 74. It can be moved by a distance.

  Thus, in the plasma CVD apparatus 20 of the present embodiment, the internal screw members 78 are moved in the axial direction based on the rotational drive control of the drive motors 74 of the first moving unit 68 and the second moving unit 70 by the servo mechanism. Along with this, the second cover cylinder part 62 and the third cover cylinder part 64 move in the vertical direction, respectively. The first and second cover tube portions 62 and 64 are moved in the vertical direction so that the second and third cover tube portions 62 from the lower opening of the circular insertion hole 54 of the lid 28 are formed. , 64 and the extending lengths of the second and third cover tube portions 62, 64 from the air outlet 52 of the plasma generator 24 can be changed. As is clear from this, in the present embodiment, the first moving unit 68 and the second moving unit 70 constitute changing means. Here, the rotational driving of the drive motors 74 of the first moving unit 68 and the second moving unit 70 is separately controlled by a servo mechanism.

  Specifically, as shown by a solid line in FIG. 2, when each female screw member 78 of the first and second moving units 68 and 70 is moved to the lower end of each screw shaft 76, the second And the extension length from the blower outlet 52 of the 3rd cover cylinder parts 62 and 64 is made into the maximum, and the movement position in the up-down direction of the 2nd and 3rd cover cylinder parts 62 and 64 is a lower limit. It is supposed to be a position. On the other hand, when the female screw members 78 of the first and second moving units 68 and 70 are moved to the upper ends of the screw shafts 76, as shown by a two-dot chain line in FIG. The extension length of the third cover tube portions 62 and 64 from the outlet 52 is minimized, and the movement position in the vertical direction of the second and third cover tube portions 62 and 64 is the upper limit position. It has become so.

  When the movement position of the second cover cylinder part 62 is set to the lower limit position, the lower end part of the second cover cylinder part 62 is adjacent to the inside of the second cover cylinder part 62 in the direction perpendicular to the axis. The first cover cylinder 60 is positioned so as to extend downward from the lower end edge of the first cover cylinder 60 and surround the lower opening of the first cover cylinder 60. When the movement position of the third cover cylinder portion 64 is set to the lower limit position while the movement position of the second cover cylinder portion 62 is set to the lower limit position, the third cover cylinder The lower end portion of the portion 64 extends below the lower end edge of the second cover tube portion 62 that is positioned adjacent to the inside of the third cover tube portion 64 in the direction perpendicular to the axis, and the second cover tube portion 62 is arranged so as to surround the lower opening of 62.

  On the other hand, when the movement positions of the second cover cylinder part 62 and the third cover cylinder part 64 are the upper limit positions, respectively, the lower positions of the second cover cylinder part 62 and the third cover cylinder part 64 are respectively below. The side opening is at a height position substantially the same as the lower opening of the first cover cylinder 60. As a result, the lower opening of the first cover cylinder part 60 is surrounded by the lower end part of the second cover cylinder part 62, and the second cover cylinder part 62 is defined by the lower end part of the third cover cylinder part 64. Each side opening is eliminated.

  In the chamber body 26, two first gas introduction pipes 90, 90 and two second gas introduction pipes 92, 92 are arranged in a protruding manner at the respective one end portions. The opening of the end portion of each first gas introduction pipe 90 into the chamber main body 26 serves as a first introduction port 94, while each second gas introduction pipe 92 enters the chamber main body 26. The opening at the entry side end is a second introduction port 96.

In addition, the two first gas introduction pipes 90 and 90 and the two second gas introduction pipes 92 and 92 are both of the first gas cylinders 98 and 98 and the second gas cylinders 100 and 100 on the other end side. Are connected to each other via an on-off valve 102. Here, a plasma CVD layer of SiO ₂ constituting the top coat layer 16 to be formed on the undercoat layer 14 of the intermediate product 18 is provided in each first gas cylinder 98 connected to each first gas introduction pipe 90. A silicon compound gas contained as a source gas in a film forming gas for formation is accommodated at a pressure exceeding atmospheric pressure. Each second gas cylinder 100 connected to each second gas introduction pipe 92 contains oxygen gas contained as a reaction gas in the film forming gas at a pressure exceeding the atmospheric pressure. As a result, the film-forming gas containing the silicon compound gas and the oxygen gas is led to the two first gas introduction pipes 90 and 90 and the two second gas introduction pipes 92 and 92, respectively. It is introduced into the chamber body 26 through the port 94 and the respective second introduction ports 96.

In the present embodiment, monosilane (SiH ₄ ) gas is used as the silicon compound gas accommodated in the first gas cylinder 98. As this silicon compound gas, in addition to monosilane gas, for example, inorganic silicon compound gas such as disilane (Si ₂ H ₆ ) gas, siloxanes such as tetramethyldisiloxane, hexamethyldisiloxane, hexamethylcyclotrisiloxane, Methoxytrimethylsilane, ethoxytrimethylsilane, dimethoxydimethylsilane, dimethoxydiethylsilane, dimethoxydiphenylsilane, trimethoxysilane, trimethoxymethylsilane, trimethoxyethylsilane, trimethoxypropylsilane, triethoxymethylsilane, triethoxydimethylsilane, trimethoxysilane Silanes such as ethoxyethylsilane, triethoxyphenylsilane, tetramethylsilane, tetramethoxysilane, tetraethoxysilane, hexamethyldisilazane, tetramethyldi Gases of organosilicon compounds such as silazanes such as silazane are used alone or in combination as appropriate. When two or more types of silicon compound gases are used, the plurality of types of silicon compound gases may be mixed and contained in one first gas cylinder 98, or two or more types of silicon compound gases may be contained. A plurality of first gas cylinders 98 are separately accommodated, and the same number of first gas introduction pipes 90 as the first gas cylinders 98 are connected to each first gas cylinder 98 one by one. May be.

Further, the type of gas accommodated in the first and second gas cylinders 98 and 100 can be appropriately changed according to the compound constituting the top coat layer 16. Therefore, when the topcoat layer 16 is made of, for example, a silicon compound such as SiON or Si ₃ N ₄ , the second gas cylinder 100 is added with oxygen gas as a reactive gas for film formation. Alternatively, nitrogen gas, ammonia gas, or the like is accommodated. Further, when the top coat layer 16 is composed of a compound other than the silicon compound, the source gas of the film forming gas contained in the first gas cylinder 98 corresponds to the compound constituting the top coat layer 16. Gas is used instead of silicon compound gas.

  As shown in FIG. 2, the two first gas introduction pipes 90, 90 have end portions on the side opposite to the connection side with the respective first gas cylinders 98, and the lid body 28 of the chamber body 26. It penetrates the upper bottom wall portion 46 of the mounting cylinder portion 44 fixed on the top, and further passes through the circular insertion hole 54 of the lid body 28, so that the first cover cylinder portion 60 and the second cover cylinder portion 60 in the chamber body 26 are inserted. It is disposed so as to enter the space between the cover cylinder portion 62. Accordingly, the first introduction port 94 of each first gas introduction pipe 90 is disposed inside the second cover cylinder portion 62. Further, the first introduction port 94 is positioned at substantially the same height as the lower opening of the first cover cylinder part 60 inside the second cover cylinder part 62. Further, the two first gas introduction pipes 90 and 90 each having such a first introduction port 94 are arranged in the radial direction of the first cover cylinder part 60 with the first cover cylinder part 60 interposed therebetween. Located on both sides.

  On the other hand, the two second gas introduction pipes 92, 92 have attachment cylinders in which end portions opposite to the connection side to the respective second gas cylinders 100 are fixed on the lid body 28 of the chamber body 26. Through the upper bottom wall portion 46 of the portion 44 and further through the circular insertion hole 54 of the lid 28, between the second cover cylinder portion 62 and the third cover cylinder portion 64 in the chamber body 26. It is rushed into the space. Accordingly, the second introduction port 96 of each second gas introduction pipe 92 is disposed inside the third cover cylinder portion 64. Further, the second introduction port 96 is positioned at substantially the same height as the respective lower openings of the first cover cylinder part 60 and the second cover cylinder part 62 inside the third cover cylinder part 64. doing. Further, the two second gas introduction pipes 92 and 92 each having such a second introduction port 96 are arranged in the radial direction of the second cover cylinder part 62 with the second cover cylinder part 62 interposed therebetween. Located on both sides.

  Thus, here, when the second cover cylinder portion 62 and the third cover cylinder portion 64 are arranged at the lower limit positions of the two, the two first gas cylinders 98, 98 are connected to the two The monosilane gas guided by the first gas introduction pipes 90, 90 is introduced into the second cover cylinder portion 62 through the first introduction ports 94. In addition, oxygen gas introduced from the two second gas cylinders 100, 100 by the two second gas introduction pipes 92, 92 is introduced into the inside of the third cover cylinder portion 64. .

  And thereby, with respect to the argon plasma gas blown out from the air outlet 52 of the plasma generator 24 and guided to the inside of the second cover cylinder part 62 from the lower opening of the first cover cylinder part 60. The monosilane gas contacts the inside of the second cover tube portion 62 and the oxygen gas contacts the inside of the third cover tube portion 64 to be turned into plasma. As is clear from these, in the present embodiment, the first and second gas introduction pipes 90 and 92, the first and second introduction ports 94 and 96, and the first and second gas cylinders 98 and 100, A gas introduction means is configured.

  In the present embodiment, as shown by an arrow in FIG. 2, when monosilane gas is introduced from the first introduction port 94 of each first gas introduction pipe 90 to the inside of the second cover cylinder portion 62, A part of the monosilane gas blown out from the first inlet 94 toward the outer side in the radial direction of the second cover cylinder portion 62 or the monosilane plasma gas that is converted into plasma by contact with the argon plasma gas is used as the second cover cylinder. It collides with the inner peripheral surface of the part 62. This prevents the monosilane gas and the monosilane plasma gas from diffusing into the chamber body 26 as much as possible.

  Furthermore, when oxygen gas is introduced into the inside of the third cover cylinder part 64 from the second introduction port 96 of each second gas introduction pipe 92, the diameter of the third cover cylinder part 64 from the second introduction port 96. A part of oxygen gas blown outward in the direction and oxygen plasma gas that is converted into plasma by contact with the argon plasma gas collide with the inner peripheral surface of the third cover cylinder portion 64. This prevents the oxygen gas and oxygen plasma gas from diffusing into the chamber body 26 as much as possible.

  In this case, the second cover cylinder part 62 and the third cover cylinder part 64 are respectively raised upward from the lower limit position by a predetermined dimension, so that the lower opening of the first cover cylinder part 60 is opened. The distance from the lower opening of the second cover cylinder 62 to the lower opening of the second cover cylinder 62 and the distance from the lower opening of the second cover cylinder 62 to the lower opening of the third cover cylinder 64 are shortened. As a result, a part of the high-temperature monosilane plasma gas and a part of the high-temperature oxygen plasma gas that have been converted into plasma by contact with the argon plasma gas can be intentionally diffused into the chamber body 26. . Thereby, the temperature of the monosilane gas plasma and the oxygen gas plasma when reaching the undercoat layer 14 of the intermediate product 18 supported on the substrate holder 34 can be effectively reduced. .

  By the way, when the resin glass 10 having the structure shown in FIG. 1 is manufactured using the plasma CVD apparatus 20 having such a structure, the operation is advanced according to the following procedure.

  That is, first, a polycarbonate substrate 12 is prepared by injection molding or the like. The molding method of the substrate 12 is not limited to injection molding, and a known method can be appropriately employed.

  Then, after forming a coating layer such as acrylic resin or polyurethane resin on the surface of the prepared substrate 12 by known spray coating or dipping, the coating layer is heated or exposed to ultraviolet rays. To cure. As a result, the undercoat layer 14 is formed on the surface of the substrate 12 to obtain an intermediate product 18 (see FIG. 2).

  Next, the top coat layer 16 is laminated on the surface of the undercoat layer 14 in the intermediate product 18 using the plasma CVD apparatus 20 having the structure as shown in FIG.

  Specifically, first, as shown in FIG. 2, the intermediate product 18 is held by the substrate holder 34 while being supported on the support surface 36 of the substrate holder 34. At this time, the intermediate product 18 is disposed with the surface of the undercoat layer 14 facing upward.

Next, after the upper opening 42 is covered with the lid 28, the lid 28 is locked to the chamber body 26 by a lock mechanism (not shown). Thereby, the inside of the vacuum chamber 22 is hermetically sealed. Thereafter, the vacuum pump 40 is operated to reduce the pressure in the vacuum chamber 22. By this decompression operation, the pressure in the vacuum chamber 22 is set to about 10 ^{−5 to} 50 Pa, for example.

  In addition to the decompression operation in the vacuum chamber 22, the first and second moving units 68 and 70 are operated under the operation control by the servo mechanism described above, whereby the second and third covers. The moving positions in the vertical direction of the cylindrical portions 62 and 64 are set as preset positions, respectively. Here, the 2nd and 3rd cover cylinder parts 62 and 64 are located in the lower limit position, respectively.

  The positions of the second and third cover tube portions 62 and 64 are set such that the high-temperature monosilane plasma gas or the high-temperature oxygen gasified in the second and third cover tube portions 62 and 64 as described later. The temperature is determined appropriately in consideration of the temperature of each plasma gas when the plasma gas reaches the surface of the intermediate product 18. That is, for example, when the substrate 12 of the intermediate product 18 has low heat resistance, the temperature when the monosilane plasma gas or oxygen plasma gas reaches the surface of the intermediate product 18 is relatively low. The vertical movement positions of the second and third cover tube portions 62 and 64 are set higher than the lower limit position by a predetermined dimension.

  However, monosilane gas or oxygen gas introduced into the inside of the second and third cover cylinders 62, 64 as the vertical movement position of the second and third cover cylinders 62, 64 is closer to the upper limit position. The amount of diffusion into the vacuum chamber 22 increases. Therefore, in determining the vertical movement positions of the second and third cover cylinders 62 and 64, not only the temperature of the monosilane plasma gas or oxygen plasma gas reaching the surface of the intermediate product 18 but also the monosilane gas or oxygen It is also necessary to consider the amount of gas diffusion into the vacuum chamber 22.

  When the pressure in the vacuum chamber 22 reaches a predetermined value, an inert gas such as argon gas is introduced into the plasma generator 24 through the inert gas introduction pipe while the vacuum pump 40 is kept operating. The gas introduced into the plasma generator 24 is not limited to argon gas, and does not react with the plasma of the film forming gas for forming the topcoat layer 16 in the vacuum chamber 22. I just need it. Therefore, in addition to argon, for example, an inert gas such as helium, neon, xenon, or krypton, or a gas that does not react with the plasma of the film forming gas in a plasma state, even if it is other than the inert gas. Are used as appropriate. Moreover, it is also possible to use one of the gas components contained in the film forming gas constituting the top coat layer 16 made of the plasma CVD layer as a gas introduced into the plasma generator 24.

  Next, an inert gas is introduced into the plasma generator 24 while the high frequency power supply 48 connected to the plasma generator 24 is turned on. Thereby, the argon gas is turned into plasma in the plasma generator 24 to generate argon plasma gas. Then, as indicated by an arrow in FIG. 2, the argon plasma gas is blown out from the blowout port 52 of the plasma generator 24 to the inside of the first cover cylinder part 60 in the vacuum chamber 22. Further, such argon plasma gas is circulated inside each of the second cover cylinder part 62 and the third cover cylinder part 64, and from the lower opening of the third cover cylinder part 64, the substrate holder 34 is blown out onto the surface of the undercoat layer 14 of the intermediate product 18 supported by. At this time, diffusion of the argon plasma gas into the vacuum chamber 22 is prevented by the first, second, and third cover tube portions 60, 62, 64.

  Then, while the argon plasma gas blown out from the outlet 52 is circulated inside the first, second, and third cover cylinder portions 60, 62, 64, the first gas cylinder 98 and the second The open / close valves 102 and 102 of the gas cylinder 100 are opened. Thereby, the monosilane gas in the first gas cylinder 98 is introduced into the inner space of the second cover cylinder portion 62 in the vacuum chamber 22 from the first introduction port 94 of the first gas introduction pipe 90. At the same time, oxygen gas in the second gas cylinder 100 is introduced from the second introduction port 96 of the second gas introduction pipe 92 into the inner space of the third cover cylinder portion 64 in the vacuum chamber 22.

  At this time, the monosilane gas and the oxygen gas are diffused into the outer space of the second and third cylindrical portions 62 and 64 in the vacuum chamber 22 by the second cover cylindrical portion 62 and the third cover cylindrical portion 64. Is prevented as much as possible. Thereby, all or most of the monosilane gas and oxygen gas introduced into the inside of the second and third cylindrical portions 62 and 64 are disposed inside the second and third cylindrical portions 62 and 64 with the argon plasma gas. Contact with. Then, monosilane plasma gas and oxygen plasma gas are generated, and they are blown out from the lower opening of the third cover cylinder portion 62 toward the surface of the undercoat layer 14 of the intermediate product 18.

Then, a reaction of the monosilane plasma gas and the oxygen plasma gas is induced by the plasma CVD method to generate SiO ₂ , and the SiO ₂ is laminated on the undercoat layer 14 of the intermediate product 18.

Here, since the lower end portion of the third cover tube portion 64 is disposed so as to surround the lower opening of the second cover tube portion 62, it is introduced inside the third cover tube portion 64. The oxygen gas thus made comes into contact with the argon plasma gas at the lower side of the lower opening of the second cover cylinder portion 62 and is turned into plasma. Therefore, the monosilane plasma gas and the oxygen plasma gas are in the inner space of the third cover cylinder portion 64 closer to the surface of the undercoat layer 14 of the intermediate product 18, and under the intermediate product 18 in the vacuum chamber 22. In the space located on the surface of the coat layer 14, the reaction by plasma CVD of the plasma of monosilane gas and the plasma of oxygen gas proceeds locally. Thereby, the diffusion of the SiO ₂ produced by such a reaction into the vacuum chamber 22 is advantageously prevented, so that most of the produced SiO ₂ is deposited on the surface of the undercoat layer 14.

Thus, the top coat layer 16 composed of the SiO ₂ plasma CVD layer is laminated on the surface of the undercoat layer 14 of the intermediate product 18. Thus, the intended resin glass 10 having the structure as shown in FIG. 1 is obtained.

As is clear from the above description, when the plasma CVD apparatus 20 of the present embodiment is used, most of the SiO ₂ generated by the reaction between the monosilane plasma gas and the oxygen plasma gas in the vacuum chamber 22 is obtained as an intermediate product. It can be deposited on the surface of 18 undercoat layers 14. For this reason, it is possible to effectively suppress the attachment of SiO ₂ to the inner surface of the vacuum chamber 22 and the surface of the undercoat layer 14 such as the substrate holder 34. Therefore, it is advantageously freed from an extra work for removing SiO ₂ adhering to an unnecessary portion in the vacuum chamber 22, or the number of times of such work can be drastically reduced. As a result, it is possible to achieve the simplification and efficiency of the process of forming the topcoat layer 16 and, consequently, the manufacturing process of the resin glass 10 very effectively.

According to the plasma CVD apparatus 20 of the present embodiment, the monosilane gas and the oxygen gas contained in the film forming gas for forming the top coat layer 16 made of the SiO ₂ plasma CVD layer are particularly the second and second. By being introduced into the inside of the third cover tube portions 62 and 64, diffusion into the vacuum chamber 22 is prevented, and all or most of the monosilane gas and oxygen gas are turned into plasma. Therefore, the monosilane gas and the oxygen gas introduced into the vacuum chamber 22 are prevented as much as possible from being discharged out of the vacuum chamber 22 by the suction of the vacuum pump 40 before being converted into plasma. Therefore, the monosilane gas and the oxygen gas introduced into the vacuum chamber 22 can be effectively used without waste as the film forming gas for forming the topcoat layer 16.

Therefore, by using the plasma CVD apparatus 20 of the present embodiment as described above, the SiO ₂ constituting the top coat layer 16 is prevented from adhering to the substrate 12 other than the undercoat layer 14 as much as possible. The topcoat layer 16 composed of the SiO ₂ plasma CVD layer can be efficiently and economically laminated on the 12 undercoat layers 14.

Further, in the present embodiment, the first cover cylinder portion 60 is disposed so as to surround the air outlet 52, while the second and third cover cylinder portions 62 and 64 are the first cover cylinder. The first introduction port 94 and the second introduction port are disposed only around the inner side of the second cover cylinder part 62 and the inner side of the third cover cylinder part 64. The mouths 96 are respectively arranged. For this reason, compared with the case where the 1st cover cylinder part 60 is not provided, it introduce | transduces into the inside of the 2nd and 3rd cover cylinder parts 62 and 64 through the 1st and 2nd inlets 94 and 96. Monosilane gas or oxygen gas can be brought into contact with the argon plasma gas blown from the blowout port 52 at a position close to the surface of the undercoat layer 14 of the intermediate product 18 that is spaced downward from the blowout port 52. As a result, it is possible to advantageously prevent SiO ₂ generated by the reaction of the monosilane plasma gas and the oxygen plasma gas by the plasma CVD method from adhering to the periphery of the air outlet 52.

  Further, in the present embodiment, the monosilane gas and oxygen gas contained in the film forming gas for forming the topcoat layer 16 are passed through the first inlet 94 and the second inlet 96 to the second cover cylinder portion. 62 is introduced separately from the inside of the third cover cylinder 64. As a result, the monosilane gas and the oxygen gas come into contact with the argon plasma gas separately, so that the monosilane gas and the oxygen gas can be efficiently converted into plasma, respectively.

  The specific configuration of the present invention has been described in detail above. However, this is merely an example, and the present invention is not limited by the above description.

  For example, in the first gas introduction pipe 90 and the second gas introduction pipe 92, the first introduction port 94 and the second introduction port 96 are arranged inside the second cover cylinder portion 62 and inside the third cover cylinder portion 64. As long as they are respectively arranged, the number of them is not limited at all. That is, the number of the first gas introduction pipes 90 arranged inside the second cover cylinder part 62 and the number of the second gas introduction pipes 92 arranged inside the third cover cylinder part 64 are each one. Even if it is only 3 or more, there is no problem.

  The kind of gas introduced into the inside of the second and third cover cylinders 62 and 64 through the first and second introduction ports 94 and 96 of the first and second gas introduction pipes 90 and 92 is also appropriately determined. Can be changed. That is, at least one of the gas components contained in the film forming gas for forming the topcoat layer 16 made of the plasma CVD layer is formed inside the second cover cylinder portion 62 through the first introduction port 94. While introducing various types of gas components, through the second inlet 96, at least one of the gas components included in the film forming gas is introduced into the inside of the third cover cylinder portion 64. You just have to do it. The gas components introduced from the first introduction port 94 and the gas components introduced from the second introduction port 96 are all of the same type, some of the same type, or all of different types. Even so, there is no problem.

  Furthermore, in the said embodiment, it contains in the film-forming gas for forming the 1st cover cylinder part 60 for guiding the plasma gas blown from the blower outlet 52, and the topcoat layer 16 which consists of a plasma CVD layer. A second cover cylinder portion 62 into which one kind of gas component is introduced inside, and a third cover cylinder portion 64 into which another kind of gas component contained in the film forming gas is introduced inside, It was provided. However, if the cover tube portion is disposed in the vacuum chamber 22 as a reaction chamber so as to surround the blowout port 52 and extend in the blowing direction of the plasma blown out from the blowout port 52, The number of arrangement is not limited at all.

  For example, as shown in FIG. 3, the second and third cover tube portions 62 and 64 are omitted, and only one first cover tube portion 60 is surrounded by the air outlet 52, You may install so that it may extend in the blowing direction of the plasma from 52 in the vacuum chamber 22. FIG. In this case, the first introduction port 94 of the first gas introduction pipe 90 for introducing a kind of gas component contained in the film forming gas for forming the top coat layer 16 made of the plasma CVD layer, and film formation The second introduction port 96 of the second gas introduction pipe 92 that introduces another kind of gas component of the working gas is disposed inside the first cover cylinder portion 60. The number of introduction ports and gas introduction pipes to be arranged inside the first cover cylinder part 60 is appropriately determined according to the type of gas component to be introduced inside the first cover cylinder part 60. The

  Further, here, the first moving unit 68 as the changing means is omitted, and the first cover cylinder portion 60 is fixed so as not to move with respect to the lid 28. In addition, regarding the plasma CVD apparatus 20 shown in FIG. 3 and the plasma CVD apparatus 20 shown in FIG. 4 to be described later, members and parts having the same structure as the plasma CVD apparatus 20 according to the embodiment are shown in FIG. The same reference numerals as those in FIG.

  Even in the plasma CVD apparatus 20 of the present embodiment having such a structure, the argon gas is blown out from the outlet 52 by the first cover tube portion 60 and the inside of the first cover tube portion 60. Diffusion of the introduced film forming gas into the vacuum chamber 22 is advantageously prevented. Thereby, the same operation and effect as the operation and effect exhibited in the first embodiment can be enjoyed effectively.

  Further, as shown in FIG. 4, the first cover cylinder portion 60 is installed so as to surround the blowout port 52 and extend in the direction of blowing the plasma from the blowout port 52 into the vacuum chamber 22, The second cover cylinder part 62 may be installed so as to surround the lower opening of the first cover cylinder part 60 and extend downward. Here, the second cover cylinder portion 62 can be moved in the vertical direction by the first moving unit 68. Further, the first introduction port 94 of the first gas introduction pipe 90 and the second introduction port 96 of the second gas introduction pipe 92 are respectively arranged inside the second cover cylinder portion 62.

  Even in the plasma CVD apparatus 20 of the present embodiment having such a structure, the same functions and effects as those of the first embodiment can be enjoyed effectively.

  Further, although not shown in the drawing, the same number of cover cylinders as the number of types of film-forming gases for forming the topcoat layer made of the plasma CVD layer are separated from each other in the direction perpendicular to the axis, and placed in the vacuum chamber. While arrange | positioning, you may make it each provide the inlet which introduce | transduces a mutually different kind of gas component inside each of these cover cylinder parts. In that case, it is preferable that the cover tube portion located outside the two cover tube portions located adjacent to the inside and the outside in the direction perpendicular to the axis is at least a lower opening of the cover tube portion located on the inside. It arrange | positions so that it may surround and surround the part.

  Further, the gas introduction means for introducing the gas component contained in the film forming gas into the inside of the cover cylinder part has a specific structure, as long as it has an introduction port located inside the cover cylinder part. Is not to be done. Therefore, for example, the front end portion of the gas introduction pipe having the front end opening portion as the introduction port is inserted through the lower opening portion of the cover tube portion, or the cover tube portion is penetrated from the side to introduce the introduction port. It is also possible to arrange so as to be disposed inside the cover tube portion.

  Furthermore, when one cover cylinder part is arrange | positioned in the vacuum chamber 22 as a reaction chamber, as for this one cover cylinder part, the part surrounding the circumference | surroundings of the blower outlet 52 should just have a cylinder shape, The portion surrounding the plasma generator 24 does not necessarily have a cylindrical shape. Further, in the case where a plurality of cover tube portions are arranged in the vacuum chamber 22 as the reaction chamber, at least the portion surrounding the outlet 52 in the innermost cover tube portion is cylindrical. In the cover tube portion located outside the two cover tube portions adjacent to each other in the direction perpendicular to the axis, at least the lower opening portion of the cover tube portion located inside is surrounded. The part should just be comprised so that a cylindrical shape may be exhibited.

  Furthermore, various known structures can be adopted as the structure of the changing means for moving the cover tube portion in the axial direction to change the extension length of the cover tube portion from the outlet. For example, instead of the illustrated screw feed mechanism, the changing means can be configured by using a gear mechanism, a cylinder mechanism, or the like including a rack and a pinion.

  Further, for example, a film forming roller for winding a substrate portion unwound from a roll around which a long substrate is wound is provided in the vacuum chamber 22, and the substrate portion wound around the film forming roller is provided. It is also possible to construct a plasma CVD apparatus having a structure in which a plasma CVD layer is continuously formed on the surface of the substrate.

  In addition, in the said embodiment, although the specific example of what applied this invention to the plasma CVD apparatus used in order to form the topcoat layer which consists of a plasma CVD layer on the surface of resin glass, this invention was shown. Of course, the present invention can be advantageously applied to any plasma CVD apparatus used for forming a plasma CVD layer on the surface of a substrate.

  In addition, although not enumerated one by one, the present invention can be carried out in a mode to which various changes, modifications, improvements, etc. are added based on the knowledge of those skilled in the art. It goes without saying that all are included in the scope of the present invention without departing from the spirit of the present invention.

DESCRIPTION OF SYMBOLS 10 Resin glass 12 Board | substrate 14 Undercoat layer 16 Topcoat layer 18 Intermediate product 20 Plasma CVD apparatus 22 Vacuum chamber 24 Plasma generator 52 Outlet 60 First cover cylinder part 62 Second cover cylinder part 64 Third cover cylinder Part 68 First moving unit 70 Second moving unit 90 First gas introduction pipe 92 Second gas introduction pipe 94 First introduction port 96 Second introduction port 98 First gas cylinder 100 Second gas cylinder

Claims (5)

A reaction chamber containing the substrate; a plasma generating unit for generating plasma; and a blowout port for blowing out the plasma generated in the plasma generating unit into the reaction chamber. A plasma CVD apparatus for forming a plasma CVD film on the surface of the substrate using plasma blown into a reaction chamber,
A cover cylinder portion arranged in the reaction chamber so as to surround the blowout port and extend in the direction of blowing the plasma from the blowout port into the reaction chamber;
By introducing an inlet located inside the cover tube portion, and introducing a gas component contained in the film forming gas for forming the plasma CVD film into the cover tube portion through the inlet port, Gas introduction means for bringing the gas component into contact with the plasma blown out from the blow-out port inside the cover tube portion;
A plasma CVD apparatus comprising:   Two cover tube portions that have a plurality of the cover tube portions, the cover tube portions being arranged apart from each other in the direction perpendicular to the axis, and adjacent to the inside and the outside in the direction perpendicular to the axis A cover tube portion located outside is disposed so as to surround at least the opening on the front end side in the extending direction of the cover tube portion located inside, and the gas introduction means further includes the plurality of gas introduction means. The plasma CVD apparatus according to claim 1, wherein the plasma CVD apparatus has a plurality of introduction ports located inside each of the cover tube portions.   3. The gas components of different types contained in the film forming gas are individually introduced into the inside of each of the plurality of cover tube portions through the plurality of introduction ports. The plasma CVD apparatus as described.   Among the plurality of cover tube portions, at least the innermost cover tube portion is disposed so as to surround the blowout port and extend from the blowout port to the plasma blowing direction into the reaction chamber. And an introduction port of the gas introduction means is arranged inside the cover cylinder part excluding the innermost cover cylinder part among the plurality of cover cylinder parts. The plasma CVD apparatus as described. 5. The changing device according to claim 1, further comprising changing means for displacing the cover tube portion in the axial direction and changing an extension length of the cover tube portion from the air outlet. 2. The plasma CVD apparatus according to item 1.

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