JP2014036211A - Die bonder and semiconductor module manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture a semiconductor module with high accuracy by a simple and low cost composition.SOLUTION: A semiconductor module manufacturing method uses a heating device 111. The heating device 111 has a loop-shaped salient 122 on a top face and a region surrounded by the loop-shaped salient 122 is a first heating surface where a first bonding process is performed and a top face of the loop-shaped salient 122 is a second heating surface where a second bonding process is performed.

Description

  The present invention relates to a die bonder used for manufacturing a semiconductor module and a method for manufacturing the semiconductor module.

  Conventionally, various semiconductor modules are frequently used. For example, in a laser module which is one of semiconductor modules, a laser light source as a semiconductor element is provided in a housing. In this case, in order to ensure the reliability of the module, the laser light source is not directly bonded to the substrate serving as the heat dissipation substrate, but is bonded to the substrate via the intermediate member. For example, a member having a thermal expansion coefficient close to that of the semiconductor element is used as the intermediate member.

  As shown in Patent Documents 1 to 5, a die bonder is used for manufacturing this type of semiconductor module. The die bonder includes a heater, and the solder is melted by the heater in a joining process in which the semiconductor element is joined to the intermediate member by solder. Further, in this bonding step, for example, Patent Documents 4 to 5 describe a light emitting element in order to remove voids generated on a bonding surface of the semiconductor element with the intermediate member and improve heat dissipation from the semiconductor element. A scrubbing action is performed.

  For example, the semiconductor module disclosed in Patent Document 4 is formed by applying solder on a heat sink and bonding the semiconductor element onto the heat sink with this solder.

  In addition, the structure corresponding to the die bonder includes a conveyance chute with a flat upper surface, in which a heater is embedded, and a square-shaped conveyance frame is provided on the conveyance chute, and the inside of the conveyance frame on the conveyance chute is a heat sink. It becomes the storage part which arranges. The storage portion is formed so that the gap with the heat sink becomes as small as possible when the heat sink is arranged.

  When manufacturing a semiconductor module using the above die bonder, a heat sink is disposed in the housing, solder is applied on the heat sink, a semiconductor element is disposed on the solder, and the solder is disposed on the heat sink. Semiconductor elements are joined. At the time of this bonding, a scrub operation is performed on the semiconductor element.

  Further, the die bonder disclosed in Patent Document 5 includes a heater rail that constitutes a heating means and a conveying means for the substrate of the semiconductor module, and the heater rail has guide walls formed on both sides, and between these guide walls, A flat placement surface on which the substrate is placed is formed. The placement surface is partitioned by a partition wall having a height lower than that of the guide wall and one guide wall, and in a region opposite to the placement surface with respect to the partition wall, impurities are placed between the partition wall and the other guide wall. A removal unit is provided.

  When manufacturing a semiconductor module using the above die bonder, the substrate is mounted on the mounting surface of the heater rail, solder is applied to the substrate, and the semiconductor chip is adsorbed by the collet and transported to the impurity removal unit. Then, the high temperature gas is ejected in the impurity removal portion, and the impurities are removed from the semiconductor chip. Thereafter, the semiconductor chip is placed on the solder of the substrate, and the semiconductor chip is bonded to the substrate by the solder. At the time of this bonding, a scrub operation is performed on the semiconductor chip.

JP 62-159438 (released July 15, 1987) Japanese Patent Laid-Open No. 7-283265 (released on October 27, 1995) Japanese Patent Laid-Open No. 9-213722 (released on August 15, 1997) JP 2008-153316 A (published July 3, 2008) JP 2010-45160 A (published February 25, 2010)

  In the manufacture of a semiconductor module in which a semiconductor element is provided on a substrate via an intermediate member, generally, a first bonding step using solder between the semiconductor element and the intermediate member, and a second step using solder between the intermediate member and the substrate. A die bonder that performs the joining process is used. When using such a die bonder capable of a two-step bonding process, it is not necessary to prepare a die bonder for each bonding process, so the space for arranging the die bonder can be reduced and the manufacturing cost of the semiconductor module can be reduced. There is an advantage that it can be reduced.

  On the other hand, when manufacturing a semiconductor module that requires a two-step bonding process using a conventional die bonder, the following problems exist.

  FIG. 8A is an explanatory view showing a first joining process using solder between a semiconductor element and an intermediate member using a conventional die bonder. FIG. 8B is an explanatory view showing a second joining step using solder between the intermediate member and the substrate using a conventional die bonder.

  As shown in FIG. 8A, the conventional die bonder 201 includes a heating device 202. The heating device 202 includes a heater inside, and is a member mounting surface 202a having a flat upper surface. Furthermore, it has a suction hole 202b for sucking and fixing the member placed on the member placement surface 202a onto the member placement surface 202a.

  In the first joining step when manufacturing the semiconductor module, as shown in FIG. 8A, an intermediate member 211 is disposed on the member mounting surface 202a of the heating device 202, and on the intermediate member 211, The semiconductor element 213 is disposed via the solder layer 212.

  In this state, when heating by the heating device 202 is started, the heat generated by the heating device 202 is transmitted to the solder layer 212 through the intermediate member 211, and the solder layer 212 is melted to scrub the semiconductor element 213. Operation is performed. When this scrubbing operation is performed, excess solder is spilled from the solder layer 212 and falls into the spilled solder 221 and falls onto the member placement surface 202 a of the heating device 202.

  Thereafter, when heating by the heating device 202 is stopped, a laminated body of the intermediate member 211, the solder layer 212, and the semiconductor element 213 is formed.

  Next, in the second bonding step, as shown in FIG. 8B, a substrate 214 having a size larger than that of the intermediate member 211 is disposed on the member mounting surface 202a of the heating device 202. A laminated body of the intermediate member 211, the solder layer 212, and the semiconductor element 213 is disposed via the solder layer 215.

  In this state, after heating by the heating device 202 is started to melt the solder layer 212 and the scrubbing operation is performed on the laminated body, when heating by the heating device 202 is stopped, the substrate 214, the solder layer 215, and the intermediate member 211 are stopped. A laminated body of the solder layer 212 and the semiconductor element 213, that is, a semiconductor module is manufactured.

  By the way, in the first joining step, spilled solder 221 is generated on the member placement surface 202a of the heating device 202, and in the second joining step, the substrate 214 larger in size than the intermediate member 211 is placed on the member as it is. When placed on the surface 202 a, spilled solder 221 exists between the member placement surface 202 a and the substrate 214. For this reason, the board | substrate 214 cannot be correctly fixed on the member mounting surface 202a by the suction from the suction hole 202b.

  In addition, since the substrate 214 is disposed in an inclined state on the heating device 202, a stacked body of the intermediate member 211, the solder layer 212, and the semiconductor element 213 bonded to the substrate 214 via the solder layer 215 is formed on the substrate 214. There is a risk of misalignment with respect to 214.

  Further, since spilled solder 221 exists between the member mounting surface 202a of the heating device 202 and the substrate 214, the way in which heat is transmitted from the heating device 202 to the substrate 214 is not constant, and the temperature distribution of the substrate 214 is Not stable.

  Therefore, the conventional configuration has a problem that the semiconductor module cannot be manufactured with high accuracy.

  With respect to such problems, the die bonders of Patent Documents 1 to 5 do not have a configuration corresponding to the above-described two-stage joining process, and cannot solve the above problems.

  In addition, for example, in the configuration described in Patent Document 4, the storage portion surrounded by the conveyance frame on the conveyance chute is formed so that the gap between the heat sink and the heat sink becomes as small as possible when the heat sink is arranged. The spilled solder 221 generated by the scrubbing operation falls on the heat sink or the conveyance frame. For this reason, the problem that the upper surface of a heat sink and a conveyance frame spills and becomes dirty with the solder 221 occurs.

  Further, in the configuration described in Patent Document 5, the structure is complicated because the high temperature gas is ejected to remove impurities from the semiconductor chip, and the structure is complicated, and the heater rail is located between the guide walls on both sides. In addition, since the mounting surface, the partition walls, and the impurity removing portion are provided, there are further problems such as the arrangement position of the substrate 214 being unable to be set appropriately.

  Accordingly, the present invention provides a semiconductor module having a simple and low-cost configuration in which the first joining step using solder between the semiconductor element and the intermediate member and the second joining step using solder between the intermediate member and the substrate are performed. It is an object of the present invention to provide a die bonder and a method for manufacturing a semiconductor module that can be manufactured with high precision.

  The manufacturing method of the semiconductor module of the present invention performs a first joining step and a second joining step using a heating device having an annular convex portion on the upper surface, and in the first joining step, A first member is placed on and fixed to a first heating surface, which is a region surrounded by the annular convex portion, on the upper surface of the heating device, and a semiconductor element is disposed thereon via a first solder layer. Then, the heating device is operated to melt the first solder layer, and after the scrubbing operation is performed on the semiconductor element, the operation of the heating device is stopped, and the first member is moved to the first member. The semiconductor element is joined by a first solder layer to form a stacked body, and in the second joining step, the second heating surface, which is the upper surface of the annular convex portion, is surrounded by the annular convex portion. The second member is placed and fixed so as to close the space, and the second half is placed on the second member. The stacked body is disposed through a layer, the heating device is operated to melt the second solder layer, the heating device is stopped, and the second member is attached to the second member by the second solder layer. The laminated body is bonded.

  According to said structure, in manufacture of the semiconductor module by a die bonder, a 1st joining process and a 2nd joining process are performed. In the first joining step, the first member and the semiconductor element thereon are joined by melting the first solder layer between them to form a laminate. This first bonding step is performed on the first heating surface on the upper surface of the heating device. The first heating surface exists in a region surrounded by an annular convex portion on the upper surface of the heating device. Accordingly, when a scrubbing operation is performed on the semiconductor element in the first bonding step and spilled solder is generated thereby, the spilled solder falls into a region surrounded by the annular convex portion and is held in this region. .

  On the other hand, in the second joining step, the second member is placed on the second heating surface so as to close the space surrounded by the annular convex portion, and is formed in the first joining step with the second member. The laminated body is joined by melting the second solder layer between them. This second joining step is performed on the second heating surface which is the upper surface of the annular convex portion.

  Therefore, the second bonding step is not affected by spilled solder generated by the scrubbing operation on the semiconductor element in the first bonding step. That is, in the second joining step, there is no spilled solder between the second member and the second heating surface, and the second member can be securely fixed on the second heating surface. it can.

  In addition, since the second member is supported by the second heating surface on the upper surface of the annular convex portion having an annular shape, even if the second member is warped, the warpage is the second heating. It is difficult to influence the fixed state of the second member on the surface.

  Thereby, the heating with respect to the 2nd member by a heating apparatus can be performed stably, and a 2nd joining process can be performed favorably. The heating device has a simple and low-cost configuration. Therefore, the semiconductor module can be manufactured with high accuracy by a simple and low-cost configuration.

  In the semiconductor module manufacturing method, an inner convex portion having a height lower than the annular convex portion is formed in a region surrounded by the annular convex portion on the upper surface of the heating device, and the upper surface of the inner convex portion. Is the first heating surface, and the first heating surface may be located away from the inner wall surface of the annular convex portion.

  According to the above configuration, the spilled solder generated by the scrubbing operation on the semiconductor element in the first bonding step is accommodated in the region between the annular convex portion and the inner convex portion. Therefore, the spilled solder can be reliably moved away from the first member and the second member, and the influence of the spilled solder on the first and second joining steps can be further reduced.

  Further, since the spilled solder is accommodated in the region between the annular convex portion and the inner convex portion, the first joining step can be continuously performed. In addition, the removal of spilled solder from the heating device is further facilitated.

  In the method for manufacturing a semiconductor module, the side surface of the inner convex portion of the heating device may be inclined downward from the upper surface of the inner convex portion.

  According to the above configuration, since the side surface of the inner convex portion of the heating device is inclined downward from the upper surface of the inner convex portion, the spilled solder generated by the scrubbing operation on the semiconductor element in the first bonding step. Is accommodated in a more limited region between the annular convex portion and the inner convex portion. Therefore, the spilled solder can be more reliably moved away from the first member and the second member, and the influence of the spilled solder on the first and second joining steps can be further reduced.

  Moreover, since the area | region where a spilled solder is accommodated becomes a further limited area | region, the removal of the spilled solder from a heating apparatus becomes still easier.

  In the manufacturing method of the semiconductor module, the inner convex portion of the heating device may have a ring shape.

  According to said structure, since the inner side convex part of the heating apparatus has comprised the cyclic | annular form, when the 1st member is arrange | positioned on the 1st heating surface, the peripheral part of the 1st member is an inner side convex part. It supports in the state which contacts the 1st heating surface.

  Thereby, even if it is a case where curvature has arisen in the 1st member, compared with the case where curvature has not arisen in the 1st member, the difference in the area where the 1st heating surface and the 1st member contact is Since it is small, the warpage hardly affects the fixed state of the first member on the first heating surface. Therefore, the heating with respect to the 1st member by a heating apparatus can be performed stably, and a 1st joining process can be performed favorably.

  In the semiconductor module manufacturing method, a suction hole having one end opened in the first heating surface is formed in the heating device, and suction is performed by connecting a suction device to the suction hole. In the first joining step, the first member placed on the first heating surface is placed on the first heating surface, and in the second joining step, the first member is placed on the second heating surface. The second member may be fixed to the second heating surface.

  According to the above configuration, by the suction operation of the suction device through the suction hole, the first member placed on the first heating surface is placed on the first heating surface in the first joining step. In the second joining step, the second member placed on the second heating surface can be appropriately fixed to the second heating surface.

  The die bonder of the present invention includes a heating device for melting the solder layer, and the heating device has an annular convex portion on the upper surface, and a region surrounded by the annular convex portion on the upper surface is placed. The upper surface of the annular convex portion is a second heating surface for heating the placed member, and further, the first heating surface is heated to the first heating surface. It is characterized by comprising a fixing means for fixing the mounted member and the respective members mounted on the second heating surface on the respective heating surfaces.

  According to said structure, a semiconductor module can be manufactured, for example by a 1st joining process and a 2nd joining process by a die bonder.

  In this case, in the first joining step, the first member and the semiconductor element thereon are joined by melting the first solder layer between them to form a laminated body. This first bonding step is performed on the first heating surface on the upper surface of the heating device. The first heating surface exists in a region surrounded by an annular convex portion on the upper surface of the heating device. The first member placed on the first heating surface is fixed on the first heating surface by a fixing means.

  Accordingly, when a scrubbing operation is performed on the semiconductor element in the first bonding step and spilled solder is generated thereby, the spilled solder falls into a region surrounded by the annular convex portion and is held in this region. .

  On the other hand, in the second joining step, the second member is placed on the second heating surface so as to close the space surrounded by the annular convex portion, and is formed in the first joining step with the second member. The laminated body is joined by melting the second solder layer between them. This second joining step is performed on the second heating surface which is the upper surface of the annular convex portion. The second member placed on the second heating surface is fixed on the second heating surface by a fixing means.

  Therefore, the second bonding step is not affected by spilled solder generated by the scrubbing operation on the semiconductor element in the first bonding step. That is, in the second joining step, there is no spilled solder between the second member and the second heating surface, and the second member can be securely fixed on the second heating surface. it can.

  In addition, since the second member is supported by the second heating surface on the upper surface of the annular convex portion having an annular shape, even if the second member is warped, the warpage is the second heating. It is difficult to influence the fixed state of the second member on the surface.

  Thereby, the heating with respect to the 2nd member by a heating apparatus can be performed stably, and a 2nd joining process can be performed favorably. The heating device has a simple and low-cost configuration. Therefore, the semiconductor module can be manufactured with high accuracy by a simple and low-cost configuration.

  According to the configuration of the present invention, a semiconductor module can be manufactured with high accuracy by a simple and low-cost configuration.

It is a perspective view which shows the structure of the semiconductor laser module as a semiconductor module in embodiment of this invention. It is a perspective view which shows the structure of the heating apparatus with which the die bonder in embodiment of this invention is provided. FIG. 3A is a front view showing a first joining step by the die bonder shown in FIG. 2, and FIG. 3B is a front view showing a second joining step by the die bonder shown in FIG. It is a longitudinal cross-sectional view which shows the structure of the heating apparatus with which the die bonder in other embodiment of this invention is provided. It is a longitudinal cross-sectional view which shows the other structural example of the heating apparatus shown in FIG. It is a longitudinal cross-sectional view which shows the structure of the heating apparatus with which the die bonder in other embodiment of this invention is provided. It is a longitudinal cross-sectional view which shows the other structural example of the heating apparatus shown in FIG. FIG. 8A is an explanatory view showing a first joining process of a semiconductor element and an intermediate member by soldering using a conventional die bonder, and FIG. 8B is a diagram showing a first soldering process between the intermediate member and the substrate using a conventional die bonder. It is explanatory drawing which shows 2 joining processes.

[Embodiment 1]
Embodiments of the present invention will be described below with reference to the drawings. In the present embodiment, a case where the semiconductor module is a semiconductor laser module will be described.

(Configuration of semiconductor laser module)
FIG. 1 is a perspective view showing the configuration of the semiconductor laser module 1. In FIG. 1, in order to clarify the internal structure of the semiconductor laser module 1, the top plate and a part of the side plate of the case 50 are omitted.

  The semiconductor laser module 1 is attached to the end of an optical fiber 2, and as shown in FIG. 1, a substrate (second member) 10, a submount (first member) 20, a CoS (Chip on Submount). , Semiconductor element) 30, fiber mount 40, two leads (electrode bars) 41, and case 50. The lead penetrates the case 50 and is drawn from the case 50 in the direction opposite to the optical fiber 2.

  The substrate 10 is a bottom plate of the semiconductor laser module 1. The substrate 10 functions as a heat sink for dissipating heat generated inside the semiconductor laser module 1 (particularly CoS 30) to the outside of the semiconductor laser module 1. For this reason, the board | substrate 10 is formed with a material with high heat conductivity, for example, Cu (copper). As an example of the dimensions of the substrate 10, the long side is 16.5 mm, the short side is 10.0 mm, and the thickness is 1.0 mm.

  A submount 20 is provided on the upper surface of the substrate 10. The submount 20 is a support that supports the CoS 30 and the fiber mount 40, and is formed in a rectangular plate shape, for example, with AlN (aluminum nitride). An example of the dimensions of the submount 20 is that the long side is 9.5 mm, the short side is 5.0 mm, and the thickness is 1.0 mm.

  A CoS 30 and a fiber mount 40 are disposed on the upper surface of the submount 20. The CoS 30 and the fiber mount 40 are aligned in the direction in which the optical fiber 2 is drawn from the semiconductor laser module 1, and the fiber mount 40 supports the optical fiber 2 drawn from the CoS 30.

  The CoS 30 is obtained by integrating a laser mount 31 and a semiconductor laser chip 32. The laser mount 31 is a support that supports the semiconductor laser chip 32, and a solder layer (hard solder, first solder layer) 62 spread between the lower surface of the laser mount 31 and the upper surface of the submount 20. Bonded to the top surface.

  A semiconductor laser chip 32 is disposed on the upper surface of the laser mount 31. The semiconductor laser chip 32 emits laser light from its end face 32a, and is a laser light source mainly made of, for example, GaAs (gallium arsenide).

  The fiber mount 40 is joined to the upper surface of the submount 20 by a solder layer (hard solder) 63 spreading between the lower surface of the fiber mount 40 and the upper surface of the submount 20.

  In the semiconductor laser module 1, heat is generated from the semiconductor laser chip 32 while the semiconductor laser chip 32 is being driven. This heat is conducted to the substrate 10 through the laser mount 31, the solder layer 62, the submount 20 and the solder layer 61, and is radiated to the outside from the lower surface of the substrate 10.

  For this reason, while the semiconductor laser chip 32 is being driven, the temperature of the laser mount 31, the submount 20, and the substrate 10 rises. Therefore, the stress generated between the laser mount 31 and the submount 20 is suppressed by forming the laser mount 31 and the submount 20 with materials having the same or substantially the same thermal expansion coefficient. Further, by forming the laser mount 31 with a material whose thermal expansion coefficient is substantially the same as that of the semiconductor laser chip 32, the stress generated between the semiconductor laser chip 32 and the laser mount 31 is also suppressed. .

(Structure of die bonder)
FIG. 2 is a perspective view showing a configuration of a heating device provided in the die bonder in the embodiment of the present invention.

  As shown in FIG. 2, the die bonder 101 according to the present embodiment includes a heating device 111. The heating device 111 includes, for example, a flat plate-shaped device base 121 having a flat upper surface and an annular convex portion 122 protruding from the upper surface of the device base 121.

  The device base 121 includes a heater (not shown), and a region surrounded by the annular convex portion 122 on the upper surface is an intermediate member placement surface 121a. The submount (intermediate member) 20 of the semiconductor laser module 1 is placed on the intermediate member placement surface 121a when the semiconductor laser module 1 is manufactured. Therefore, the intermediate member mounting surface 121a is a first heating surface on which the first bonding step is performed in the manufacture of the semiconductor laser module 1.

  Further, a suction hole 121b penetrating the device base 121 is opened in the intermediate member placement surface 121a. A suction device 151 is connected to the suction hole 121b.

  The annular convex portion 122 has a rectangular frame shape and is a substrate mounting surface 122a having a flat upper surface. That is, the annular convex portion 122 has an annular shape and is closed in the circumferential direction. The substrate 10 of the semiconductor laser module 1 is placed on the substrate placement surface 122a when the semiconductor laser module 1 is manufactured. Therefore, the substrate mounting surface 122a is a second heating surface on which the second bonding step is performed.

  The size of the annular protrusion 122 is such that the substrate 10 of the semiconductor laser module 1 can be placed on the substrate placement surface 122a, and the substrate 10 is fixed on the substrate placement surface 122a by the suction operation of the suction device 151 from the suction hole 121b. It is set to be possible. Specifically, the vertical and horizontal inner dimensions of the annular protrusions 122 are smaller than the vertical and horizontal dimensions of the substrate 10. When the substrate 10 is placed on the substrate placement surface 122 a, The region in the convex portion 122 can be sealed.

  Furthermore, the dimension of the annular convex portion 122 is determined by the scrub operation with respect to the CoS 30 between the submount 20 and the annular convex portion 122 when the submount 20 of the semiconductor laser module 1 is placed on the intermediate member placement surface 121a. It is set so that a spilled solder accommodating region is formed to accommodate the generated spilled solder 123.

(Manufacturing method of semiconductor laser module)
A method for manufacturing the semiconductor laser module 1 using the die bonder 101 in the above configuration will be described.

  In manufacturing the semiconductor laser module 1 using the die bonder 101, first, the CoS (semiconductor element) 30 is bonded to the submount (intermediate member) 20 by the solder layer 62 by the first heating surface (intermediate member mounting surface 121a). A first joining step is performed. Thereafter, a second bonding step is performed in which the stacked body of the submount 20, the solder layer 62, and the CoS 30 is bonded to the substrate 10 by the solder layer 61 on the second heating surface (substrate mounting surface 122a).

  FIG. 3A is a front view showing a first joining step by the die bonder 101, and FIG. 3B is a front view showing a second joining step by the die bonder 101. FIG. 3 (a) and 3 (b), only the annular convex portion 122 of the heating device 111 is shown in the longitudinal section taken along the line AA in FIG.

  In the first joining step, first, the submount 20 is placed on the intermediate member placement surface 121a (first heating surface) in the annular convex portion 122 of the heating device 111. The submount 20 mounted on the intermediate member mounting surface 121a is fixed on the intermediate member mounting surface 121a by suction from the suction hole 121b by a suction device (not shown).

  Next, as shown in FIG. 3A, for example, a hard solder that is formed in a plate shape to be the solder layer 62 is placed on the submount 20, and the CoS 30 is placed on the solder layer 62. .

  Next, when heating by the heating device 111 is started, the temperature of the submount 20 rises, and accordingly, the temperature of the solder layer 62 rises and the solder layer 62 melts.

  In this state, a scrub operation is performed on the CoS 30. By this scrubbing operation, solder spills from the solder layer 62, and spilled solder 123 is generated in the region between the annular convex portion 122 and the submount 20 on the surface of the intermediate member mounting surface 121a.

  Thereafter, when heating by the heating device 111 is stopped, the submount 20, the solder layer 62, and the CoS 30 are naturally cooled, and the submount 20 and the CoS 30 are joined by the solder layer 62. Thereby, a stacked body of the submount 20, the solder layer 62, and the CoS 30 is formed.

  Although detailed description is omitted, the fiber mount 40 is also bonded to the submount 20 in the same manner.

  In the second bonding step, first, the substrate 10 is placed on the substrate placement surface (second heating surface) 122a of the annular convex portion 122 of the heating device 111. The substrate 10 placed on the substrate placement surface 122a is fixed on the substrate placement surface 122a by a suction operation from the suction hole 121b by a suction device (not shown).

  Next, as shown in FIG. 3B, for example, a soft solder that is formed in a plate shape to be the solder layer 61 is placed on the substrate 10, and the first bonding step is further performed on the solder layer 61. The stacked body of the submount 20, the solder layer 62, and the CoS 30 formed in (1) is placed.

  Next, when heating by the heating device 111 is started, the temperature of the substrate 10 rises, and accordingly, the temperature of the solder layer 61 rises and the solder layer 61 melts.

  In this state, a scrub operation is performed on the laminated body of the submount 20, the solder layer 62, and the CoS30. By this scrubbing operation, the solder spills from the solder layer 61 and becomes spilled solder 123. The spilled solder 123 falls on the end of the heating device 111 or outside the heating device 111.

  Note that if the heating device 111 is formed of a material to which solder does not adhere (for example, ceramic), the spilled solder 123 can be easily removed from the heating device 111 after the second bonding step.

  The laminated body formed through the second bonding step is housed in the case 50, and after processing such as connecting the optical fiber 2, the semiconductor laser module 1 shown in FIG. 1 is obtained.

  As described above, the spilled solder 123 generated in the first joining step falls into the first spilled solder accommodating region between the annular convex portion 122 and the submount 20 on the intermediate member mounting surface 121a. On the other hand, the second first bonding step is performed in a state where the substrate 10 is mounted on the substrate mounting surface (second heating surface) 122a of the annular convex portion 122. Therefore, the second bonding step can be performed without being disturbed by the spilled solder 123.

  That is, in the second bonding step, the spilled solder 123 does not exist under the substrate 10, and the substrate 10 can be reliably fixed on the substrate mounting surface 122a by suction from the suction hole 202b.

  In addition, since the substrate 10 can be fixed horizontally on the substrate mounting surface 122a, there is no possibility of causing a positional shift of the stacked body of the submount 20, the solder layer 62, and the CoS 30 with respect to the substrate 10.

  Further, since the substrate 10 can be reliably fixed on the substrate placement surface 122a, heat can be stably transmitted from the heating device 111 to the substrate 10, and the temperature distribution of the substrate 10 is stabilized.

  Further, since the substrate 10 is supported in a state in which the peripheral edge thereof is in contact with the substrate mounting surface 122a of the frame-shaped annular convex portion 122, even when the substrate 10 is warped (each substrate 10). Even if the flatness of the substrate 10 varies, warpage of the substrate 10 (variation of the flatness of each substrate 10) hardly affects the fixed state of the substrate 10. Therefore, the substrate 10 can be stably heated, and the second bonding step can be performed satisfactorily.

  Moreover, the heating device 111 uses the intermediate member placement surface 121a inside the annular projection 122 as the first heating surface on which the first joining process is performed, and the substrate placement surface 122a on the upper surface of the annular projection 122 as the first heating surface. Since it is the structure used as the 2nd heating surface where 2 joining processes are performed, it is a simple and low-cost structure.

  In addition, if the part which contact | abuts the board | substrate 10 to the board | substrate mounting surface 122a of the cyclic | annular convex part 122 is made flat by the press work, for example, the board | substrate 10 can perform a 2nd joining process still more favorably.

  By having the advantages as described above, the die bonder 101 can manufacture a semiconductor module with high accuracy with a simple and low-cost configuration.

In the present embodiment, the suction hole 121b and the suction device 151
The submount (intermediate member, first member) 20 is fixed on the intermediate member mounting surface (first heating surface) 121a, and the substrate (second heating surface) 122a is fixed on the substrate mounting surface (second heating surface) 122a. The fixing means for fixing the member 10) is configured. However, the fixing means is not limited to the suction hole 121b and the suction device 151, and other depressions and protrusions formed on the intermediate member mounting surface 121a and the substrate mounting surface 122a for fixing the submount 20 and the substrate 10, respectively. It may be.

  Further, when the fixing means includes the suction hole 121b and the suction device 151, it is preferable that the annular convex portion 122 has an annular shape and is closed in the circumferential direction as described above. However, even if the annular convex portion 122 has a shape that is not completely closed in the circumferential direction, if the suction device 151 has sufficient suction force to fix the submount 20 and the substrate 10, the annular convex portion 122 is completely closed. The shape is not limited.

[Embodiment 2]
Another embodiment of the present invention will be described below with reference to the drawings.
FIG. 4 is a longitudinal section showing a configuration of a heating device provided in a die bonder according to another embodiment of the present invention. In FIG. 4 and FIG. 5 described later, only the annular convex portion 122 and the inner convex portion 132 are shown in a longitudinal section.

  As shown in FIG. 4, the die bonder 101 of the present embodiment includes a heating device 131 instead of the heating device 111.

  In the heating device 131, an inner convex portion 132 is formed in a region surrounded by the annular convex portion 122 on the upper surface of the device base 121. The inner convex portion 132 has a quadrangular prism shape whose height is lower than that of the annular convex portion 122, and has a flat intermediate member mounting surface (first heating surface) 132a on the upper surface. Therefore, the intermediate member placement surface (first heating surface) 132 a exists at a position away from the inner wall surface of the annular convex portion 122. The shape of the intermediate member mounting surface 132a is substantially congruent with the lower surface of the submount 20 mounted thereon.

  A submount (first member) 20 as an intermediate member of the semiconductor laser module 1 is placed on the intermediate member placement surface 132a when the semiconductor laser module 1 is manufactured. Therefore, the intermediate member mounting surface 132a is a first heating surface on which the first bonding step is performed.

  Further, in order to fix the submount 20 disposed on the intermediate member mounting surface 132a on the intermediate member mounting surface 132a by suction, the suction hole 121b extends to the surface of the intermediate member mounting surface 132a. Further, a region between the annular convex portion 122 and the inner convex portion 132 on the upper surface of the device base 121 is a spilled solder accommodating region that accommodates the spilled solder 123. Other configurations of the heating device 131 are the same as those of the heating device 111.

  According to said structure, the heating apparatus 131 is provided with the inner side convex part 132, and the upper surface of the inner side convex part 132 becomes the intermediate member mounting surface (1st heating surface) 132a, and arises in a 1st joining process. The spilled solder 123 is accommodated in a spilled solder accommodating region between the annular convex part 122 and the inner convex part 132 on the upper surface of the apparatus base 121. Therefore, the spilled solder 123 can be reliably moved away from the substrate 10 and the submount 20, and the influence of the spilled solder 123 on the first and second joining steps can be further reduced.

  Further, since the spilled solder 123 is accommodated in the solder accommodating area, the first joining step can be performed continuously. Further, the removal of the spilled solder 123 from the heating device 131 is further facilitated.

  Further, the intermediate member placement surface 132a can be set to an area corresponding to the lower surface of the submount 20 as compared with the intermediate member placement surface 121a in the heating device 111 described above. This facilitates flattening of the intermediate member placement surface 132a, and improves the adhesion between the intermediate member placement surface 132a and the submount 20 when the submount 20 is placed on the intermediate member placement surface 132a. The first bonding step can be performed more satisfactorily. About another function, it is the same as that of the heating apparatus 111 mentioned above.

  As shown in FIG. 5, the heating device 131 may have a configuration in which the inner convex portion 132 is formed in a rectangular frame shape like the annular convex portion 122. That is, the inner convex portion 132 may be formed in an annular shape that is closed in the circumferential direction. FIG. 5 is a front view showing another configuration example of the heating device 131 shown in FIG. 4.

  According to the configuration of the heating device 131 shown in FIG. 5, the submount 20 is supported in a state where the peripheral edge thereof is in contact with the intermediate member mounting surface 132 a of the frame-shaped inner convex portion 132. Even if the warpage of the submount 20 occurs (even if the flatness of each substrate submount 20 varies), the warpage of the submount 20 (the variation of the flatness of each substrate 10) may occur. It is difficult to affect the fixed state of 20. Therefore, the submount 20 can be stably heated and the first bonding step can be performed satisfactorily.

  When the fixing means includes the suction hole 121b and the suction device 151, it is preferable that the inner convex portion 132 has an annular shape and is closed in the circumferential direction as described above. However, the inner convex portion 132 may not have a completely closed shape for the same reason as in the case of the annular convex portion 122. This also applies to the following embodiments.

[Embodiment 3]
Still another embodiment of the present invention will be described below with reference to the drawings.
FIG. 6 is a longitudinal sectional view showing a configuration of a heating device provided in a die bonder according to still another embodiment of the present invention. In FIG. 6 and FIG. 7 described later, only the annular convex portion 122 and the inner convex portion 142 are shown in a vertical section.

  As shown in FIG. 6, the die bonder 101 of the present embodiment includes a heating device 141 instead of the heating device 111.

  In the heating device 141, an inner convex portion 142 is formed in a region surrounded by the annular convex portion 122 on the upper surface of the device base 121. The inner convex portion 142 has a quadrangular pyramid shape that is lower than the annular convex portion 122, and has a flat intermediate member mounting surface (first heating surface) 142a on the upper surface. Therefore, the side surface of the inner convex portion 142 is an inclined surface that is inclined so as to spread downward from the upper surface of the inner convex portion 142. Further, the intermediate member placement surface (first heating surface) 142 a exists at a position away from the inner wall surface of the annular convex portion 122. The shape of the intermediate member mounting surface 142a is substantially congruent with the lower surface of the submount 20 mounted thereon.

  The submount (intermediate member) 20 of the semiconductor laser module 1 is placed on the intermediate member placement surface 142a when the semiconductor laser module 1 is manufactured. Therefore, the intermediate member mounting surface 142a is a first heating surface on which the first joining step is performed.

  Further, in order to fix the submount 20 disposed on the intermediate member placement surface 142a on the intermediate member placement surface 142a by suction, the suction hole 121b extends to the surface of the intermediate member placement surface 142a. In addition, a region between the annular convex portion 122 and the inner convex portion 142 on the upper surface of the device base 121 is a spilled solder accommodating region that accommodates the spilled solder 123. Other configurations of the heating device 141 are the same as those of the heating device 111.

  According to the above configuration, the spilled solder 123 generated in the first joining step is between the annular convex portion 122 and the inner convex portion 142 on the upper surface of the device base 121 as in the case of the configuration including the heating device 131. It is accommodated in the spilled solder accommodating area. In this case, since the inner convex part 142 has a quadrangular frustum shape, the spilled solder accommodating area is a more limited area than the case of the heating device 131 shown in FIG. Therefore, the spilled solder 123 can be further reliably moved away from the substrate 10 and the submount 20, and the influence of the spilled solder 123 on the first and second joining steps can be further reduced.

  Moreover, it is possible to perform a 1st joining process continuously. In addition, since the spilled solder accommodating area is a more limited area, it is easier to remove the spilled solder 123 from the heating device 141.

  Further, the adhesion between the intermediate member placement surface 142a and the submount 20 when the submount 20 is placed on the intermediate member placement surface 142a is improved, and the first joining step can be performed more satisfactorily. This is the same as the case of the configuration including the heating device 131. About another function, it is the same as that of the heating apparatus 111 mentioned above.

  As shown in FIG. 7, the heating device 141 may have a configuration in which the inside of the inner convex portion 142 is hollow and the intermediate member mounting surface 142 a has a rectangular frame shape. That is, the inner convex portion 142 may be formed in an annular shape that is closed in the circumferential direction. FIG. 7 is a front view illustrating another configuration example of the heating device 141 illustrated in FIG. 6.

  According to the configuration of the heating device 141 shown in FIG. 7, the submount 20 is supported in a state in which the peripheral edge thereof is in contact with the frame-shaped intermediate member mounting surface 142 a, so that the submount 20 is warped. Even if the flatness of each substrate submount 20 varies (even if the flatness of each substrate submount 20 varies), the warpage of the submount 20 (variation of the flatness of each substrate 10) is in the fixed state of the submount 20. It is hard to influence. Therefore, as in the case of the configuration shown in FIG. 5, the submount 20 can be stably heated, and the first bonding step can be performed satisfactorily.

  The present invention can be used for a laser module connected to an optical fiber. In particular, it can be suitably used for a laser module (semiconductor laser module) on which a semiconductor laser is mounted.

1 Semiconductor laser module 10 Substrate (second member)
20 Submount (first member)
30 CoS (semiconductor element)
31 Laser mount 32 Semiconductor laser chip 61 Solder layer (second solder layer)
62 Solder layer (first solder layer)
101 Die Bonder 111 Heating Device 121 Stage Base 121a Intermediate Member Placement Surface (First Heating Surface)
121b Suction hole (fixing means)
122 Annular convex part 122a Substrate mounting surface (second heating surface)
123 Spilled solder 131 Heating device 132 Inner convex part 132a Intermediate member mounting surface (first heating surface)
141 Heating device 142 Inner convex part 142a Intermediate member mounting surface (first heating surface)
151 Suction device

Claims (6)

Using a heating device having an annular convex portion on the top surface, the first joining step and the second joining step are performed,
In the first joining step,
A first member is placed on and fixed to a first heating surface, which is a region surrounded by the annular convex portion, on the upper surface of the heating device, and a semiconductor element is placed thereon via a first solder layer. Place and
After operating the heating device to melt the first solder layer and scrubbing the semiconductor element, the operation of the heating device is stopped and the first member is moved to the first member. The semiconductor element is bonded by a solder layer to form a laminate,
In the second joining step,
A second member is placed and fixed on the second heating surface, which is the upper surface of the annular protrusion, so as to close the space surrounded by the annular protrusion, and a second solder layer is interposed therebetween. To arrange the laminate,
The heating device is operated to melt the second solder layer, the operation of the heating device is stopped, and the stacked body is joined to the second member by the second solder layer. Manufacturing method of semiconductor module.   An inner convex portion having a lower height than the annular convex portion is formed in a region surrounded by the annular convex portion on the upper surface of the heating device, and the upper surface of the inner convex portion serves as the first heating surface. 2. The method of manufacturing a semiconductor module according to claim 1, wherein the first heating surface is present at a position away from an inner wall surface of the annular convex portion.   The method of manufacturing a semiconductor module according to claim 2, wherein a side surface of the inner convex portion of the heating device is inclined downward from an upper surface of the inner convex portion.   The method for manufacturing a semiconductor module according to claim 2, wherein the inner convex portion of the heating device has an annular shape.   The heating device is formed with a suction hole whose one end is open to the first heating surface, and a suction device is connected to the suction hole to perform suction. The first member placed on one heating surface is placed on the first heating surface, and the second member placed on the second heating surface is placed on the first heating surface in the second joining step. 5. The method of manufacturing a semiconductor module according to claim 1, wherein the semiconductor module is fixed to each of the two heating surfaces. A heating device for melting the solder layer;
The heating device has an annular convex portion on the upper surface,
The region surrounded by the annular convex portion on the upper surface is a first heating surface that heats the placed member,
The upper surface of the annular convex portion is a second heating surface for heating the placed member,
And a fixing means for fixing the member placed on the first heating surface and the members placed on the second heating surface on the heating surfaces. Characteristic die bonder.

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