JP2013251430A - Method of manufacturing semiconductor wafer including silicon-based adhesive layer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer including a silicon-based adhesive layer with an even thickness on a surface, without including air bubbles between a semiconductor wafer and the silicon-based adhesive layer.SOLUTION: There is provided a method of manufacturing a semiconductor wafer including a silicon-based adhesive layer. The method comprises at least the following steps: (1) a step of applying a liquid silicon-based adhesive agent on one surface of a semiconductor wafer and (2) a step of coating the surface of the adhesive agent with a non-fluorine detachable film, or a step of simultaneously performing the step (1) and the step (2), and (3) a subsequent step of curing the adhesive agent in a certain thickness with the detachable film adhered.

Description

  The present invention relates to a method for manufacturing a semiconductor wafer having a silicone-based adhesive layer.

  A liquid die bonding agent is used when die-bonding a semiconductor chip to a support such as a substrate or a lead frame, or when laminating a semiconductor chip and another semiconductor chip. However, the liquid die bonding agent has problems that the liquid die bonding agent protrudes from the semiconductor chip during die bonding, and it is difficult to control the thickness of the liquid die bonding agent.

  On the other hand, when die-bonding a semiconductor chip to a support, a sheet-like die bonding material is also used (see Patent Documents 1 and 2). Since the sheet-like die bonding material is adjusted in advance to the size of the semiconductor chip, the die bonding material does not protrude from the semiconductor chip, and the thickness of the die bonding material can be easily controlled.

  Furthermore, a wafer laminating process for adhering a sheet-like die bonding material to a semiconductor wafer, a dicing process for adhering a semiconductor wafer to a dicing tape via a die bonding material, and cutting the wafer into semiconductor chips, a die bonding material There is also known a method of die bonding a semiconductor chip to a support through a pick-up step of picking up a semiconductor chip having a chip and mounting it on a substrate, and then a die bonding step of bonding the semiconductor chip and the substrate with a die bonding material ( (See Patent Document 3).

  However, when a sheet-shaped die bonding material is attached to a semiconductor chip or a semiconductor wafer, there is a problem that air bubbles are involved between the semiconductor chip or the semiconductor wafer and the sheet-shaped die bonding material.

Japanese Patent Laid-Open No. 11-12546 JP 2000-336271 A JP 2005-183855 A

  An object of this invention is to provide the manufacturing method of the semiconductor wafer which has a silicone type adhesive material layer of uniform thickness on the surface, without having a bubble between a semiconductor wafer and a silicone type adhesive material layer.

A method for manufacturing a semiconductor wafer having a silicone-based adhesive layer, comprising at least the following steps.
1) a step of applying a liquid silicone adhesive on one side of a semiconductor wafer, and 2) a step of coating a non-fluorine-based peelable film on the surface of the adhesive,
Or the process of performing said 1) and said 2) simultaneously,
Then
3) The process of hardening the said adhesive agent by fixed thickness in the state which stuck this peelable film.

  The production method of the present invention is characterized in that a semiconductor wafer having a silicone-based adhesive layer having a uniform thickness on its surface can be produced without having bubbles between the semiconductor wafer and the silicone-based adhesive layer. .

  In the first step of the manufacturing method of the present invention, a liquid silicone adhesive is applied to one side of a semiconductor wafer. Examples of the semiconductor wafer include a silicon wafer and a SiC semiconductor wafer.

In addition, as the liquid silicone adhesive, those composed of a hydrosilylation reaction-curable silicone composition are preferable,
(A) an organopolysiloxane having at least two silicon-bonded alkenyl groups in one molecule;
(B) an organopolysiloxane having at least two silicon atom hydrogen atoms in one molecule;
(C) an adhesion promoter, and
(D) What consists of a catalyst for hydrosilylation reaction at least is preferable.

  Component (A) is the main component of the above composition and is an organopolysiloxane having at least two silicon-bonded alkenyl groups in one molecule. Examples of the molecular structure of component (A) include a straight chain, a partially branched straight chain, a branched chain, and a network. Further, examples of the silicon-bonded alkenyl group in component (A) include a vinyl group, an allyl group, a butenyl group, a pentenyl group, and a hexenyl group, and a vinyl group is particularly preferable. In addition, examples of the group bonded to the silicon atom other than the alkenyl group in the component (A) include alkyl groups such as methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group; phenyl group, tolyl Groups, xylyl groups, aryl groups such as naphthyl groups; aralkyl groups such as benzyl groups and phenethyl groups; halogenated alkyl groups such as chloromethyl groups, 3-chloropropyl groups, 3,3,3-trifluoropropyl groups, etc. Examples include halogen-substituted or unsubstituted monovalent hydrocarbon groups, and methyl and phenyl groups are particularly preferred. Further, the viscosity of the component (A) is not limited, but the viscosity at 25 ° C. is preferably in the range of 100 to 1,000,000 mPa · s.

Examples of the organopolysiloxane of the component (A) include a trimethylsiloxy group-capped dimethylsiloxane / methylvinylsiloxane copolymer at both molecular chain ends, a trimethylsiloxy group-capped methylvinylpolysiloxane at both molecular chain ends, and a trimethylsiloxy group-capped methylvinylpolysiloxane. Siloxy group-blocked dimethylsiloxane / methylvinylsiloxane / methylphenylsiloxane copolymer, dimethylvinylsiloxy group-blocked dimethylpolysiloxane at both ends of the molecular chain, dimethylvinylsiloxy group-blocked methylvinylpolysiloxane at both ends of the molecular chain, dimethylvinyl at both ends of the molecular chain siloxy group-blocked dimethylsiloxane-methylvinylsiloxane copolymer, both molecular terminals with dimethylvinylsiloxy groups dimethylsiloxane-methylvinylsiloxane-methylphenylsiloxane copolymers, wherein: R Siloxane units of the formula ₃ SiO ^_1/2: siloxane units represented by the formula _R 1 ² _R ² SiO _1/2: organopolysiloxane copolymers composed of siloxane units represented by SiO _4/2, ^{R 1} _An organopolysiloxane copolymer comprising a siloxane unit represented by ₂ R ² SiO _1/2 and a formula: siloxane unit represented by SiO _4/2 , a siloxane unit represented by the formula: R ¹ R ² SiO _2/2 An siloxane unit represented by: R ¹ SiO _3/2 or an organopolysiloxane copolymer comprising a siloxane unit represented by the formula: R ² SiO _3/2 , and a mixture of two or more of these organopolysiloxanes are exemplified. The In the above formula, R ¹ is a halogen-substituted or unsubstituted monovalent hydrocarbon group other than an alkenyl group, and examples thereof include the same groups as described above. In the above formula, R ² is an alkenyl group, and examples thereof are the same groups as described above.

  Component (B) is a cross-linking agent for the above composition and is an organopolysiloxane having at least two silicon-bonded hydrogen atoms in one molecule. Examples of the molecular structure of the component (B) include a straight chain, a partially branched straight chain, a branched chain, a ring, and a network. In addition, as the group bonded to silicon atoms other than hydrogen atoms in the component (B), alkyl groups such as methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group; phenyl group, tolyl Groups, xylyl groups, aryl groups such as naphthyl groups; aralkyl groups such as benzyl groups and phenethyl groups; halogenated alkyl groups such as chloromethyl groups, 3-chloropropyl groups, 3,3,3-trifluoropropyl groups, etc. Examples include halogen-substituted or unsubstituted monovalent hydrocarbon groups, and methyl and phenyl groups are particularly preferred. Further, the viscosity of the component (B) is not limited, but the viscosity at 25 ° C. is preferably in the range of 1 to 100,000 mPa · s.

Examples of such an organopolysiloxane of component (B) include molecular chain both ends trimethylsiloxy group-capped methylhydrogen polysiloxane, molecular chain both ends trimethylsiloxy group-capped dimethylsiloxane / methylhydrogensiloxane copolymer, both molecular chains Terminal trimethylsiloxy group-blocked dimethylsiloxane / methylhydrogensiloxane / methylphenylsiloxane copolymer, molecular chain both ends dimethylhydrogensiloxy group-blocked dimethylpolysiloxane, molecular chain both ends dimethylhydrogensiloxy group-blocked dimethylsiloxane / methylphenylsiloxane copolymers, both molecular terminals with dimethylhydrogensiloxy groups at methylphenyl polysiloxane, ^formula siloxane units of the formula _{^{R 1 3 SiO 1/2: R 1}} 2 HSiO 1 / In the siloxane units represented by the formula: The organopolysiloxane copolymers composed of siloxane units represented by SiO _4/2, is represented by the ^formula: SiO _4/2: siloxane units represented by the formula _R 1 2 HSiO _1/2 Organopolysiloxane copolymer comprising a siloxane unit, a siloxane unit represented by the formula: R ¹ HSiO _2/2 and a siloxane unit represented by the formula: R ¹ SiO _3/2 or a siloxane unit represented by the formula: HSiO _3/2 And a mixture of two or more of these organopolysiloxanes. In the above formula, R ¹ is a halogen-substituted or unsubstituted monovalent hydrocarbon group other than an alkenyl group, and examples thereof include the same groups as described above.

  The content of the component (B) is an amount sufficient to crosslink the component (A). Specifically, the content of the component (A) is 1 mol of the silicon-bonded alkenyl group in the component (A). It is preferable that the amount of silicon atom-bonded hydrogen atoms be in the range of 0.5 to 10 mol, particularly in the range of 1 to 3 mol. This is because, in the above composition, if the content of the component (B) is not less than the lower limit of the above range, the resulting composition is sufficiently crosslinked, while if it is not more than the upper limit of the above range, it is obtained. This is because the heat resistance of the resulting crosslinked product is improved.

  Component (C) is an adhesion promoter for imparting good adhesion to the crosslinked product of the composition, and examples thereof include silane compounds and siloxane compounds having a silicon atom-bonded alkoxy group. Such component (C) includes: (i) epoxy group-containing alkoxysilane or partially hydrolyzed condensate thereof; (ii) silicon atom-bonded alkenyl group or silicon atom-bonded hydrogen atom and silicon atom-bonded alkoxy group in one molecule (Iii) organosiloxane having at least one silicon atom-bonded alkenyl group or silicon atom-bonded hydrogen atom, silicon atom-bonded alkoxy group and silicon atom-bonded epoxy-containing monovalent organic group in one molecule. (Iv) A mixture or reaction of a silane or siloxane having at least one silicon atom-bonded alkoxy group in one molecule and an organosiloxane having at least one silicon atom-bonded hydroxy group and at least one silicon atom-bonded alkenyl group in one molecule Mixture, and (v) silicon atom bond in one molecule An organosilane or organosiloxane having at least one monovalent organic group containing an alkoxy group and a silicon atom-bonded epoxy group, and an organosiloxane having at least one silicon atom-bonded hydroxy group and at least one silicon atom-bonded alkenyl group in one molecule. It is preferably at least one selected from the group consisting of a mixture or a reaction mixture.

  As the above component (i), 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltri Examples include methoxysilane and partial hydrolysis condensates thereof.

で表されるような、分子鎖片末端がトリメトキシシロキシ基で封鎖され、他の分子鎖片末端がビニル基で封鎖されたジメチルシロキサンオリゴマー、分子鎖片末端がトリメトキシシリルエチル基で封鎖され、他の分子鎖片末端がビニル基で封鎖されたジメチルシロキサンオリゴマー、式：

で表されるような分子鎖片末端がトリメトキシシロキシ基で封鎖され、他の分子鎖片末端がジメチルハイドロジェンシロキシ基で封鎖されたジメチルシロキサンオリゴマー、分子鎖片末端がトリメトキシシリルエチル基で封鎖され、他の分子鎖片末端がジメチルハイドロジェンシロキシ基で封鎖されたジメチルシロキサンオリゴマー、メチル(トリメトキシシリルエチル)シロキサン・メチルビニルシロキサン環状重合体、式：

で表されるようなメチル(トリメトキシシリルエチル)シロキサン・メチルハイドロジェンシロキサン環状重合体が例示される。 As the component (ii), the formula:

A dimethylsiloxane oligomer in which one end of a molecular chain is blocked with a trimethoxysiloxy group and the other molecular chain end is blocked with a vinyl group, and one end of a molecular chain is blocked with a trimethoxysilylethyl group. , Dimethylsiloxane oligomer with other molecular chain ends blocked with vinyl groups, formula:

A dimethylsiloxane oligomer in which one end of a molecular chain is blocked with a trimethoxysiloxy group and the other end of a molecular chain is blocked with a dimethylhydrogensiloxy group, and the end of a molecular chain is a trimethoxysilylethyl group. Dimethylsiloxane oligomer blocked with other molecular chain ends blocked with dimethylhydrogensiloxy group, methyl (trimethoxysilylethyl) siloxane / methylvinylsiloxane cyclic polymer, formula:

And a methyl (trimethoxysilylethyl) siloxane / methylhydrogensiloxane cyclic polymer represented by the formula:

（式中、ａは１以上の整数であり、ｂは１以上の整数である。）
で表されるオルガノシロキサン、式：

で表される環状シロキサン、一般式：

（式中、ａは１以上の整数であり、ｂは１以上の整数である。）
で表されるオルガノシロキサンが例示される。 As the component (iii), the general formula:

(In the formula, a is an integer of 1 or more, and b is an integer of 1 or more.)
An organosiloxane represented by the formula:

A cyclic siloxane represented by the general formula:

(In the formula, a is an integer of 1 or more, and b is an integer of 1 or more.)
The organosiloxane represented by these is illustrated.

  The content of the component (C) is an amount sufficient to give good adhesiveness to the crosslinked product of the above composition, and specifically, 0.01 to 20 mass with respect to 100 parts by mass of the component (A). The amount is preferably in the range of 0.1 part by mass, and particularly preferably in the range of 0.1 to 10 parts by mass. This is because the adhesiveness of the resulting crosslinked product is improved when the content of the component (C) is at least the lower limit of the above range, and on the other hand, when the content is not more than the upper limit of the above range, This is because stability is improved.

  Component (D) is a catalyst for accelerating the crosslinking of the composition by the hydrosilylation reaction, and examples thereof include well-known hydrosilylation catalysts such as platinum-based catalysts, rhodium-based catalysts, and palladium-based catalysts. Since the reaction rate is good, platinum fine powder, platinum black, platinum-supported silica fine powder, platinum-supported activated carbon, chloroplatinic acid, chloroplatinic acid alcohol solution, platinum olefin complex, platinum alkenylsiloxane complex, etc. A platinum-based catalyst is preferred.

  The content of the component (D) is sufficient to promote the hydrosilylation reaction of the composition. Specifically, when a platinum-based catalyst is used as the component (D), in the composition, The amount of platinum metal in the catalyst is preferably in an amount in the range of 0.01 to 1,000 ppm, particularly in an amount in the range of 0.1 to 500 ppm. This is because when the content of the component (D) is not less than the lower limit of the above range, the crosslinking rate of the resulting composition is improved. On the other hand, if the content is not more than the upper limit of the above range, the resulting crosslinked product is obtained. This is because it is difficult to cause problems such as coloring.

  In order to adjust the hydrosilylation reaction rate of the composition, the composition may contain a hydrosilylation reaction inhibitor. Examples of the reaction inhibitor include alkyne alcohols such as 2-methyl-3-butyn-2-ol, 3,5-dimethyl-1-hexyn-3-ol, and 2-phenyl-3-butyn-2-ol; -Ene-in compounds such as methyl-3-penten-1-yne and 3,5-dimethyl-3-hexen-1-yne; 1,3,5,7-tetramethyl-1,3,5,7-tetravinyl Examples include cyclotetrasiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetrahexenylcyclotetrasiloxane and benzotriazole. The content of the reaction inhibitor varies depending on the curing conditions of the composition, but is preferably 5 parts by mass or less, particularly 0.0001 to 5 parts by mass with respect to 100 parts by mass of the component (A). It is preferable to be within the range.

  Further, the above composition contains precipitated silica, wet silica, fumed silica, calcined silica, and a reinforcing filler obtained by treating these with an organosilicon compound such as organohalosilane, organoalkoxysilane, or organosilazane. Also good. The content of the reinforcing filler is preferably 20 parts by mass or less, particularly preferably in the range of 1 to 15 parts by mass with respect to 100 parts by mass of the component (A).

  In addition, the above composition may be filled with an inorganic material such as titanium oxide, alumina, glass, quartz, aluminosilicate, iron oxide, zinc oxide, calcium carbonate, carbon black, silicon carbide, silicon nitride, boron nitride, etc. as other optional components. Agents, inorganic fillers obtained by treating these fillers with organosilicon compounds such as organohalosilanes, organoalkoxysilanes, and organosilazanes; organic resin fine powders such as silicone resins, epoxy resins, and fluororesins; conductive materials such as silver and copper A filler such as a conductive metal powder, a dye, a pigment, a flame retardant, and a solvent may be contained. Furthermore, unless the purpose of the present invention is impaired, a curable epoxy resin, a curable epoxy-modified silicone resin, a curable silicone-modified epoxy resin, a curable polyimide resin, a curable polyimide-modified silicone resin, a curable silicone-modified polyimide resin, etc. You may contain.

  The viscosity of such a liquid silicone adhesive at 25 ° C. is not limited, but is preferably in the range of 1 to 200 Pa · s. This is because it is easy to apply the obtained adhesive to a semiconductor wafer when it is at least the lower limit of the above range, and on the other hand, when it is below the upper limit of the above range, the coating workability is improved.

  In the first step, examples of the method for applying the liquid silicone adhesive to a semiconductor wafer include a gravure coater, a Mayer bar coater, an air knife coater, and a roll coater.

  Next, in the second step in the production method of the present invention, the surface of the silicone-based adhesive is coated with a non-fluorine release film. This peelable film has appropriate peelability for the cured silicone adhesive, and since the cured silicone adhesive layer has good adhesiveness, it comes into contact with the silicone adhesive. A film having oxygen atoms and / or sulfur atoms on the surface is preferable. The oxygen atom is preferably an atom constituting a group selected from the group consisting of a carbonyl group, an alkoxy group, an ester group, and an ether group, and the sulfur atom is composed of a sulfone group and a thioether group. An atom constituting a group selected from the group is preferable. Such peelable films include polyester resin, polyether resin, polyether ether ketone resin, epoxy resin, phenol resin, polyoxymethylene resin, polyimide resin, polyamide resin, polyetherimide resin, cellulose acetate resin (diacetic acid Cellulose resin, cellulose triacetate resin, etc.), polysulfone resin, polyether sulfone resin, and polyphenylene sulfide resin are exemplified. The thickness of the peelable film is not particularly limited, but is usually about 1 to 100 μm, preferably about 5 to 100 μm.

  Moreover, in the manufacturing method of this invention, you may perform said 1st process and said 2nd process simultaneously. That is, it is also possible to apply the semiconductor wafer by placing a liquid silicone adhesive on one surface of the semiconductor wafer and spreading the adhesive while covering the non-fluorine-based peelable film. At this time, bubbles are not generated between the semiconductor wafer and the liquid silicone adhesive by spreading the silicone adhesive onto the semiconductor wafer while pushing the non-fluorine-based peelable film with a roller or the like.

  Next, in the third step in the production method of the present invention, the adhesive is cured with a certain thickness while the peelable film is adhered. The thickness of the liquid silicone adhesive layer is preferably in the range of 25 to 300 μm. This is because the silicone-based adhesive layer obtained by curing has sufficient stress relaxation properties after die bonding.

  Examples of the method of curing the liquid silicone adhesive with a constant thickness include press heating and heat roll heating. Moreover, although heating temperature is not limited, It is preferable to exist in the range of 50-200 degreeC.

  The semiconductor wafer thus obtained by the manufacturing method of the present invention will be described with reference to FIG. The semiconductor wafer 1 has a silicone-based adhesive layer 2 on one surface and a peelable film 3 on the surface of the adhesive layer 2. This semiconductor wafer is then cut into semiconductor chips by dicing. Since this semiconductor chip has a silicone-based adhesive layer, the peelable film on the surface is peeled off to support a substrate, a lead frame, or the like. It is possible to die-bond to this semiconductor chip.

  The method for producing a semiconductor wafer of the present invention will be described in detail with reference to examples. In the examples, the viscosity is a value at 25 ° C. Moreover, the following evaluation was performed about the semiconductor wafer which has a silicone type adhesive material layer.

[Peelability of peelable film]
After producing the semiconductor wafer which has a silicone type adhesive material layer, after leaving still at 25 degreeC for 1 hour, the peelability of the peelable film from a silicone type adhesive material layer was evaluated.

[Adhesiveness of silicone adhesive layer]
After producing the semiconductor wafer which has a silicone type adhesive material layer, after leaving still at 25 degreeC for 1 hour, the peelable film was removed from the silicone type adhesive material layer. Next, a 1 cm × 1 cm silicon chip was attached to the surface of the silicone-based adhesive layer and heated at 150 ° C. for 1 hour. Then, it cooled to room temperature and evaluated the adhesiveness to the silicon chip of a silicone type adhesive material layer.

[Adhesiveness of silicone adhesive layer after storage]
After producing the semiconductor wafer which has a silicone type adhesive material layer, after leaving still at 25 degreeC for 1 week, the peelable film was removed from the silicone type adhesive material layer. Next, a 1 cm × 1 cm silicon chip was attached to the surface of the silicone-based adhesive layer and heated at 150 ° C. for 1 hour. Then, it cooled to room temperature and evaluated the adhesiveness to the silicon chip of a silicone type adhesive material layer.

[Example 1]
Molecular chain both ends dimethylvinylsiloxy group-blocked dimethylpolysiloxane having a viscosity of 40,000 mPa · s (content of silicon atom-bonded vinyl group = 0.08 mass%) 68.5 parts by mass, formula: (CH ₃ ) ₃ SiO ₁ Organopolysiloxane resin (silicon) comprising a siloxane unit represented by _{/ 2} and a siloxane unit represented by the formula: (CH ₃ ) ₂ (CH ₂ = CH) SiO _1/2 and a siloxane unit represented by the formula: SiO _4/2 Atom-bonded vinyl group content = 2.01% by mass) and 2,000 mPa · s molecular chain terminal dimethylvinylsiloxy group-blocked dimethylpolysiloxane having a viscosity of 2,000 mPa · s (content of silicon atom-bonded vinyl group = 0.23) 19.2 parts by mass of an organopolysiloxane mixture having a viscosity of 6,000 mPa · s and a molecular chain at both ends having a viscosity of 5 mPa · s. Roxy group-blocked dimethylsiloxane / methylhydrogensiloxane copolymer (content of silicon-bonded hydrogen atoms = 0.75 mass%) 1.5 parts by mass (total silicon in the dimethylpolysiloxane and organopolysiloxane mixture) Amount in which the silicon atom-bonded hydrogen atom in this component with respect to the atom-bonded vinyl group is 1.26), 1.0 part by mass of 3-glycidoxypropyltrimethoxysilane, 1,3-divinyl-1,1,2, 3,3-tetramethyldisiloxane complex (amount in which platinum metal in the complex is 5 ppm by mass with respect to the total amount of the above dimethylpolysiloxane and dimethylsiloxane / methylvinylsiloxane copolymer), 2-phenyl 3-butyn-2-ol 0.005 parts by weight, and fumed silica (Japan BET specific surface area of 200 meters ² / g Aerosil Co., Ltd. Aerosil 200) were uniformly mixed with 10 parts by mass, to prepare a liquid silicone-based adhesive having a viscosity of 24 Pa · s.

  Next, the liquid silicone adhesive is sandwiched between a 4-inch silicon wafer and a polyethersulfone resin film film having a thickness of 50 μm (trade name: Sumilite FS1300, manufactured by Sumitomo Bakelite Co., Ltd.), and the film is covered with a rubber roller. The adhesive was stretched from above, and the thickness of the adhesive was adjusted to 100 μm. Next, this was heated at 100 ° C. for 3 minutes to produce a silicon wafer having a silicone-based adhesive layer. This silicon wafer was evaluated and the results are shown in Table 1.

[Example 2]
Molecular chain both ends dimethylvinylsiloxy group-blocked dimethylpolysiloxane having a viscosity of 40,000 mPa · s (content of silicon atom-bonded vinyl group = 0.08 mass%) 68.5 parts by mass, formula: (CH ₃ ) ₃ SiO ₁ Organopolysiloxane resin (silicon) comprising a siloxane unit represented by _{/ 2} and a siloxane unit represented by the formula: (CH ₃ ) ₂ (CH ₂ = CH) SiO _1/2 and a siloxane unit represented by the formula: SiO _4/2 Atom-bonded vinyl group content = 2.01% by mass) and 2,000 mPa · s molecular chain terminal dimethylvinylsiloxy group-blocked dimethylpolysiloxane having a viscosity of 2,000 mPa · s (content of silicon atom-bonded vinyl group = 0.23) 19.2 parts by weight of an organopolysiloxane mixture having a viscosity of 6,000 mPa · s and 60 ml% by weight of the molecular chain at both ends of the molecular chain having a viscosity of 5 mPa · s. 2.7 parts by mass of a roxy-group-blocked dimethylsiloxane / methylhydrogensiloxane copolymer (content of silicon atom-bonded hydrogen atoms = 0.75% by mass) (total silicon in the dimethylpolysiloxane and organopolysiloxane mixture) The amount of silicon atom-bonded hydrogen atoms in this component with respect to the atom-bonded vinyl group is 2.26), the viscosity is 20 mPa · s, the molecular chain both ends hydroxyl-blocked dimethylsiloxane / methylvinylsiloxane copolymer oligomer and 3-glycidoxypropyl 1.3 parts by weight of a condensation reaction product with a mass ratio of 1: 2 with trimethoxysilane (vinyl group content = 5.0% by mass), 1,3-divinyl-1,1,3,3-tetra of platinum Methyldisiloxane complex (the total amount of the above dimethylpolysiloxane and dimethylsiloxane / methylvinylsiloxane copolymer The amount of platinum metal in the body is 5ppm in mass units), 2-phenyl-3-butyn-2-ol 0.005 parts by weight, and fumed silica has a BET specific surface area of 200m ² / g (Nippon Aerosil Co. Aerosil 200 manufactured) 10 parts by mass was uniformly mixed to prepare a liquid silicone adhesive having a viscosity of 25 Pa · s.

  Next, the liquid silicone adhesive is sandwiched between a 4-inch silicon wafer and a polyethersulfone resin film film having a thickness of 50 μm (trade name: Sumilite FS1300, manufactured by Sumitomo Bakelite Co., Ltd.), and the film is covered with a rubber roller. The adhesive was stretched from above, and the thickness of the adhesive was adjusted to 100 μm. Next, this was heated at 100 ° C. for 3 minutes to produce a silicon wafer having a silicone-based adhesive layer. This silicon wafer was evaluated and the results are shown in Table 1.

で表される環状シロキサン１.０質量部、白金の１,３−ジビニル−１,１,３,３−テトラメチルジシロキサン錯体（上記ジメチルポリシロキサン、ジメチルシロキサン・メチルビニルシロキサン共重合体の合計量に対して、本錯体中の白金金属が質量単位で５ｐｐｍとなる量）、２−フェニル−３−ブチン−２−オール０.００５質量部、およびＢＥＴ比表面積が２００ｍ^２／ｇであるヒュームドシリカ（日本アエロジル社製のアエロジル２００）１０質量部を均一に混合して、粘度２３Ｐａ・ｓの液状シリコーン系接着剤を調製した。 [Example 3]
Molecular chain both ends dimethylvinylsiloxy group-blocked dimethylpolysiloxane having a viscosity of 40,000 mPa · s (content of silicon atom-bonded vinyl group = 0.08 mass%) 68.5 parts by mass, formula: (CH ₃ ) ₃ SiO ₁ Organopolysiloxane resin (silicon) comprising a siloxane unit represented by _{/ 2} and a siloxane unit represented by the formula: (CH ₃ ) ₂ (CH ₂ = CH) SiO _1/2 and a siloxane unit represented by the formula: SiO _4/2 Atom-bonded vinyl group content = 2.01% by mass) and 2,000 mPa · s molecular chain terminal dimethylvinylsiloxy group-blocked dimethylpolysiloxane having a viscosity of 2,000 mPa · s (content of silicon atom-bonded vinyl group = 0.23) 19.2 parts by weight of an organopolysiloxane mixture having a viscosity of 6,000 mPa · s and 60 ml% by weight of the molecular chain at both ends of the molecular chain having a viscosity of 5 mPa · s. Roxy group-blocked dimethylsiloxane / methylhydrogensiloxane copolymer (content of silicon atom-bonded hydrogen atom = 0.75% by mass) 2.0 parts by mass (total silicon in the dimethylpolysiloxane and organopolysiloxane mixture) The amount by which the silicon atom-bonded hydrogen atom in this component with respect to the atom-bonded vinyl group is 1.68), average formula:

1.0 parts by mass of a cyclic siloxane represented by the formula: 1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex of platinum (total of the above dimethylpolysiloxane and dimethylsiloxane / methylvinylsiloxane copolymer) Fume whose platinum metal in the complex is 5 ppm by mass), 0.005 parts by mass of 2-phenyl-3-butyn-2-ol, and a BET specific surface area of 200 m ² / g. 10 parts by mass of dosilica (Aerosil 200 manufactured by Nippon Aerosil Co., Ltd.) was uniformly mixed to prepare a liquid silicone adhesive having a viscosity of 23 Pa · s.

  Next, the liquid silicone adhesive is sandwiched between a 4-inch silicon wafer and a polyethersulfone resin film film having a thickness of 50 μm (trade name: Sumilite FS1300, manufactured by Sumitomo Bakelite Co., Ltd.), and the film is covered with a rubber roller. The adhesive was stretched from above, and the thickness of the adhesive was adjusted to 100 μm. Next, this was heated at 100 ° C. for 3 minutes to produce a silicon wafer having a silicone-based adhesive layer. This silicon wafer was evaluated and the results are shown in Table 1.

[Example 4]
In Example 1, instead of the polyether sulfone resin film, a silicone-based adhesive was used in the same manner as in Example 1 except that a cellulose acetate resin film having a thickness of 50 μm (trade name: Lonzatack, manufactured by Panac) was used. A silicon wafer having a layer was produced. This silicon wafer was evaluated and the results are shown in Table 1.

[Example 5]
In Example 1, instead of the polyethersulfone resin film, a silicone adhesive was used in the same manner as in Example 1 except that a polyethylene terephthalate film having a thickness of 50 μm (trade name: Melinex manufactured by Teijin DuPont Films) was used. A silicon wafer having a material layer was produced. This silicon wafer was evaluated and the results are shown in Table 1.

[Comparative Example 1]
In Example 1, a silicone adhesive was used in the same manner as in Example 1 except that a fluororesin film having a thickness of 50 μm (trade name: Aflex, manufactured by Asahi Glass Co., Ltd.) was used instead of the polyether sulfone resin film. A silicon wafer having a layer was produced. This silicon wafer was evaluated and the results are shown in Table 1.

[Comparative Example 2]
In Example 1, a silicon wafer having a silicone-based adhesive layer was produced in the same manner as in Example 1 except that the polyethersulfone resin film was not used. This silicon wafer was evaluated and the results are shown in Table 1.

  The semiconductor wafer obtained by the production method of the present invention has a silicone adhesive layer having a uniform thickness on the surface without bubbles between the semiconductor wafer and the silicone adhesive layer. Therefore, it is suitable as a semiconductor wafer for a semiconductor device requiring the above.

It is sectional drawing of the semiconductor wafer prepared with the manufacturing method of this invention.

1: Semiconductor wafer 2: Silicone adhesive layer 3: Non-fluorine release film

Claims (4)

A method for manufacturing a semiconductor wafer having a silicone-based adhesive layer, comprising at least the following steps.
1) a step of applying a liquid silicone adhesive on one side of a semiconductor wafer, and 2) a step of coating a non-fluorine-based peelable film on the surface of the adhesive,
Or the process of performing said 1) and said 2) simultaneously,
Then
3) The process of hardening the said adhesive agent by fixed thickness in the state which stuck this peelable film.   The manufacturing method of Claim 1 whose liquid silicone type adhesive agent is a hydrosilylation reaction curable silicone composition. The hydrosilylation reaction curable silicone composition is
(A) an organopolysiloxane having at least two silicon-bonded alkenyl groups in one molecule;
(B) an organopolysiloxane having at least two silicon atom hydrogen atoms in one molecule;
(C) an adhesion promoter, and
The production method according to claim 2, comprising at least (D) a catalyst for hydrosilylation reaction.   Non-fluorine release film is polyester resin, polyether resin, polyether ether ketone resin, epoxy resin, phenol resin, polyoxymethylene resin, polyimide resin, polyamide resin, polyetherimide resin, cellulose acetate resin, polysulfone resin, The manufacturing method of Claim 1 which is at least 1 sort (s) selected from the group which consists of polyethersulfone resin and polyphenylene sulfide resin.

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