JP2013171853A - Optical semiconductor device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical semiconductor device that is good in production efficiency, and that can reduce cost.SOLUTION: A method of manufacturing an optical semiconductor device 3 includes: a mounting step of mounting a plurality of optical semiconductor elements 6 on a substrate 4 having an energization part to obtain an element aggregate substrate; a half-dicing step of half-dicing the element aggregate substrate to cut a part of the energization part and to produce an electronic circuit for energization inspection in the element aggregate substrate; an energization inspection step of performing energization inspection to the electronic circuit for energization inspection to obtain optical characteristic information for each element; a selection step of selecting the element by using the optical characteristic information; and a full-dicing step of full-dicing on a cutting line by the half-dicing step to divide the element aggregate substrate into individual optical semiconductor devices and to obtain a plurality of the optical semiconductor devices selected by the optical characteristic information.

Description

  The present invention relates to an optical semiconductor device and a method for manufacturing the same.

  Optical semiconductor devices such as LEDs and photodiodes are widely used in the industry because of their high efficiency and high resistance to external stresses and environmental influences. Furthermore, in addition to high efficiency, optical semiconductor devices have a long lifetime, are compact, can be configured in many different structures, and can be manufactured at relatively low manufacturing costs.

Japanese Patent No. 4789350

  However, an optical semiconductor device manufactured with a collective substrate called MAP (Matrix array package) is difficult to carry out an electrical current inspection at the manufacturing stage, and the final product shape (individually divided optical semiconductor device) is used. Conducted electric inspection after becoming. For this reason, quality defects at the manufacturing stage could not be confirmed, leading to a decrease in production efficiency.

  Further, the optical semiconductor device needs to be selected depending on the output of the optical semiconductor element and the concentration variation of the phosphor to be sealed. Normally, the optical semiconductor device sorting process is performed in a state where the optical semiconductor device is completely separated. However, sorting in the state where the optical semiconductor device is completely separated requires additional steps such as arrangement of the optical semiconductor device. As a result, the cost was increased.

  The present invention has been made to solve the above problems, and provides an optical semiconductor device manufacturing method capable of reducing the cost with high production efficiency, and an optical semiconductor device manufactured by the manufacturing method. The purpose is to do.

In order to solve the above problems, the present invention provides a method of manufacturing an optical semiconductor device,
A mounting process for mounting an optical semiconductor element assembly substrate by mounting a plurality of optical semiconductor elements on a substrate having an energization part;
A half dicing step of cutting a part of the energization part and half-dicing the optical semiconductor element assembly substrate to produce an electronic circuit for energization inspection in the optical semiconductor element assembly substrate;
An energization inspection step for obtaining an optical characteristic information for each optical semiconductor element by conducting an energization inspection for the electronic circuit for the energization inspection,
A sorting step of sorting the optical semiconductor element using the optical characteristic information;
Full dicing step of dividing the optical semiconductor element assembly substrate into individual optical semiconductor devices by full dicing on the cutting line in the half dicing step, and obtaining a plurality of the optical semiconductor devices sorted by the optical characteristic information An optical semiconductor device manufacturing method is provided.

  With such an optical semiconductor device manufacturing method, the production efficiency is good and the cost can be reduced.

  Further, in the energization inspection step, it is preferable to perform an energization inspection using an optical characteristic detection device.

  Thereby, for example, the presence or absence of lighting for each optical semiconductor element, the luminous flux value, the chromaticity, the color temperature, the wavelength spectrum, the color rendering property, and the like can be confirmed and selected.

  Furthermore, in the energization inspection process, it is preferable that an optical lens for detecting optical characteristics is arranged so as to correspond to each optical semiconductor element to obtain optical characteristic information.

  Thereby, a large amount of optical characteristic information of the optical semiconductor element can be obtained by one measurement, and the man-hour for selecting the optical semiconductor device is greatly reduced.

  Further, as the substrate having the energization portion, a substrate obtained by transfer molding a resin on a metal frame or a substrate obtained by transfer molding a resin on a printed board can be used.

  If such a substrate is used, it becomes a manufacturing method of an optical semiconductor device that is more productive and can further reduce the cost.

  Furthermore, it is preferable to use a substrate having a resin formed on the metal frame by transfer molding, wherein the metal frame has a groove in a portion cut by the half dicing process.

  Thereby, chipping of the molding resin due to dicing burr or chipping can be prevented.

  Moreover, it is preferable to use the board | substrate which impregnated resin to the fiber reinforcement laminated | stacked on three or more layers as said printed circuit board.

  If it is such a printed circuit board, an optical semiconductor device strong in heat resistance and UV resistance can be manufactured.

  Further, in the full dicing step, it is preferable to use a dicing blade having a width different from that of the dicing blade used in the half dicing step.

  This makes it possible to completely separate the optical semiconductor device even when a positional deviation occurs in the half dicing process or the full dicing process.

  In the half dicing step, it is preferable that an electronic circuit for energization inspection is produced so as to have a connection surface for connecting a power probe used in the energization inspection step.

  Thus, workability is further improved by designing the connection surface of the power supply probe in the electronic circuit of the optical semiconductor element assembly substrate.

  Furthermore, the present invention provides an optical semiconductor device manufactured by the method for manufacturing an optical semiconductor device.

  Since such an optical semiconductor device has a groove formed by half dicing, when mounting on an external substrate, a good adhesive strength can be obtained by arranging an adhesive with the external substrate in the groove. It becomes possible.

  As described above, according to the method of manufacturing an optical semiconductor device of the present invention, it is possible to carry out an energization inspection at the manufacturing stage, and the selection at the manufacturing stage using the optical characteristic information obtained at the time of the energization inspection. Quality can be built in. For this reason, production efficiency can be improved. In addition, since the energization inspection is performed on the optical semiconductor element assembly substrate, steps such as the arrangement of individual optical semiconductor devices can be eliminated, and cost reduction can be achieved by simplifying the manufacturing method.

  Moreover, the groove part by half dicing is formed in the optical semiconductor device manufactured by the said manufacturing method. Therefore, when the semiconductor device of the present invention is mounted on the external substrate, it is possible to obtain a good adhesive strength by disposing an adhesive with the external substrate in the groove.

  Furthermore, by arranging a plurality of optical lenses for measurement of the optical characteristic detection device in accordance with the arrangement pitch of the optical semiconductor device of the optical semiconductor element assembly substrate half-diced by the above-described energization inspection, a large amount can be obtained in one measurement. The optical characteristic information can be obtained, and the man-hour required for selecting the optical semiconductor device can be greatly reduced.

It is a schematic sectional drawing of the optical semiconductor device of this invention. It is a schematic plan view of an optical semiconductor element assembly substrate. It is a schematic perspective view of the half dicing process of an optical semiconductor element assembly substrate. FIG. 5 is a schematic plan view of an optical semiconductor element assembly substrate, and a schematic plan view showing an example of a half dicing position and an electronic circuit manufacturing method in the optical semiconductor element assembly substrate. It is a schematic sectional drawing of the connection method of the optical semiconductor device of this invention, and an external substrate. It is a schematic plan view about the electricity supply inspection method of an optical semiconductor element assembly substrate. It is a flowchart of the manufacturing method of the optical semiconductor device of this invention. It is a flowchart of the manufacturing method of another optical semiconductor device of this invention. It is a schematic sectional drawing of the optical characteristic information detection method of the optical semiconductor element assembly board | substrate by an optical lens group.

  Hereinafter, although the manufacturing method of the optical semiconductor device of this invention and the optical semiconductor device manufactured by it are demonstrated in detail, this invention is not limited to these.

That is, the method for manufacturing an optical semiconductor device of the present invention includes a mounting step of mounting an optical semiconductor element aggregate substrate by mounting a plurality of optical semiconductor elements on a substrate having a current-carrying portion;
A half dicing step of cutting a part of the energization part and half-dicing the optical semiconductor element assembly substrate to produce an electronic circuit for energization inspection in the optical semiconductor element assembly substrate;
An energization inspection step for obtaining an optical characteristic information for each optical semiconductor element by conducting an energization inspection for the electronic circuit for the energization inspection,
A sorting step of sorting the optical semiconductor element using the optical characteristic information;
Full dicing step of dividing the optical semiconductor element assembly substrate into individual optical semiconductor devices by full dicing on the cutting line in the half dicing step, and obtaining a plurality of the optical semiconductor devices sorted by the optical characteristic information And have.

  At this time, a substrate obtained by transfer molding a resin on a metal frame or a substrate obtained by transfer molding a resin on a printed board can be used as the substrate having the energization portion. It is desirable to use a silicone resin composition or an epoxy resin composition as the resin for transfer molding in consideration of the heat resistance and durability of the optical semiconductor device.

  Further, in the energization inspection step, it is preferable to conduct an energization inspection using an optical property detection device. Since the optical semiconductor elements are arranged on the collective substrate in the energization inspection process, it is possible to omit the process of arranging the optical semiconductor device for the next sorting process. In the half dicing process, it is preferable to produce an electronic circuit for energization inspection so as to have a connection surface for connecting a power probe used in the energization inspection process. In this way, the workability is further improved by designing the contact point of the power supply probe for the power supply inspection on the outer peripheral portion of the collective substrate.

  In addition, it is preferable to use what has a groove | channel in the part cut | disconnected by a half dicing process as a board | substrate which resin-molded resin to the metal frame. Thereby, chipping of the molding resin due to dicing burr or chipping can be prevented.

  Moreover, it is preferable to use the board | substrate which impregnated resin to the fiber reinforcement laminated | stacked on three or more layers as a printed circuit board. This fiber reinforcement may be laminated with the layers rotating 90 degrees. Examples of the resin impregnated in the fiber reinforcing material include a silicone resin and an epoxy resin. Preferably, a printed circuit board having high heat resistance and UV resistance is obtained by using a silicone resin. An optical semiconductor device manufactured using this printed circuit board also has excellent heat resistance and UV resistance.

  In the full dicing process, it is preferable to use a dicing blade having a width different from the width of the dicing blade used in the half dicing process. This makes it possible to completely separate the optical semiconductor device even when a positional deviation occurs in the half dicing process or the full dicing process. At this time, it is desirable to use a dicing blade that is narrower than the dicing blade used in the half dicing process in the full dicing process in order to reduce the size of the collective substrate and to ensure insulation between the PNs.

  The optical semiconductor device manufactured by the above-described manufacturing method has a dicing groove by half dicing. Adhesive material (solder) with the external substrate enters the groove, so that the adhesion between the optical semiconductor device and the external substrate can be dramatically improved.

  Furthermore, in the energization inspection process, it is preferable to arrange an optical lens for optical characteristic detection so as to correspond to each optical semiconductor element to obtain optical characteristic information. For example, it is possible to prepare a plurality of optical lenses for detecting optical characteristics and use an optical lens group that matches the arrangement pitch and shape of the optical semiconductor element assembly substrate. By using this optical lens group, it becomes possible to detect optical characteristic information generated from a plurality of optical semiconductor elements at a time. Further, it is desirable that the tip of the optical lens has a cavity shape that encloses the optical semiconductor element. This is because by disposing individual optical semiconductor elements in the cavity shape, it is possible to block and measure the influence of light generated from other optical semiconductor elements.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1A is a cross-sectional view of an optical semiconductor device using a metal frame 1 (also referred to as a metal lead frame), and FIG. 1B is a cross-sectional view of an optical semiconductor device using a printed circuit board 2. Although FIG. 1 shows an example using a face-up type optical semiconductor element, the manufacturing method of the optical semiconductor device of the present invention is a flip chip type by changing the arrangement method of the pad of the substrate and the pad bonding portion. And vertical optical semiconductor elements. Further, even when the number of pads is two or three, the optical semiconductor device can cope with the problem by adjusting the arrangement of the pad joints.

  FIG. 1A shows an example of a chip-type optical semiconductor device 3. The substrate 4 having the current-carrying parts 5, 5 ′ (electrodes, external terminals) can be manufactured by molding a molded product 8 by transfer molding a composition mainly composed of silicone resin on the metal frame 1. The electrodes 5 are a pair of electrodes formed over both surfaces of the substrate 4, and the electrodes 5 on the lower surface side of the substrate 4 serve as external connection terminals 5 ′. The optical semiconductor element 6 can be a blue or UV optical semiconductor element, and is mounted on the substrate 4 and wired between the electrodes 5 by a bonding wire 7 such as Au—Al. In the case where the optical semiconductor element is a flip chip type, wiring by gold bumps can be used. The molded product (reflector) 8 is molded by transfer molding and surrounds the optical semiconductor element 6. The sealing resin (silicone resin) 9 seals the inside of the cavity portion by the molded product (reflector) 8 of the optical semiconductor device 3. The sealing resin 9 can contain a phosphor. The groove portion 10 is a groove formed by half dicing. The optical semiconductor device using the printed circuit board 2 of FIG. 1B has the same configuration, and the upper surface and the lower surface of the printed circuit board 2 can be electrically connected by the vias 11. In addition, when using the board | substrate which carried out resin transfer molding to the metal frame 1 as the board | substrate 4 which has an electricity supply part, the metal frame 1 becomes an electricity supply part, and when using the board | substrate which carried out resin transfer molding to the printed circuit board 2, it is a printed circuit board. A metal coating layer or the like formed on 2 by printing or the like serves as an energization portion.

  FIG. 2 is a schematic front view showing an example of the optical semiconductor element assembly substrate 12. The optical semiconductor device 3 is manufactured by full dicing the optical semiconductor element assembly substrate 12 called MAP (Matrix array package) shown in FIG. The optical semiconductor element assembly substrate 12 can be obtained by mounting a plurality of optical semiconductor elements on a substrate having a current-carrying portion. The board | substrate 4 which has an electricity supply part is obtained by resin-molding the molding 8 by transfer molding with respect to the metal frame 1 in which the some optical semiconductor element 6 can be mounted. The molded article 8 is made of a silicone resin composition and desirably contains a metal oxide for the purpose of improving reflectivity.

  As shown in FIG. 3, in the optical semiconductor element assembly substrate 12, a part of the energization portion of the substrate 4 is cut by half dicing, whereby an electronic circuit for energization inspection is produced in the optical semiconductor element assembly substrate 12. The current is applied to the electronic circuit for current inspection by connecting to the power source through the connection surface 15 for connecting the power probe for current inspection prepared in advance on the optical semiconductor element assembly substrate 12. The optical characteristics can be inspected while mounted on the optical semiconductor element assembly substrate 12. At the time of this energization inspection, the presence / absence of lighting, the luminous flux value, the chromaticity, the color temperature, the wavelength spectrum, the color rendering property, etc. are confirmed as optical characteristics, and then the selection process is performed.

  Here, a method for producing an electronic circuit 13 ′ for energization inspection in the optical semiconductor element assembly substrate 12 will be described with reference to FIG. 4. FIG. 4 is a diagram exemplarily showing the energization portion 13 and the optical semiconductor element 6 of the optical semiconductor element assembly substrate 12 in which the optical semiconductor elements 6 are arranged in 3 × 3. FIG. 4A shows the optical semiconductor element assembly substrate 12 before half dicing. 4B to 4D, three series electronic circuits 13 ′ with three optical semiconductor elements (B) and three parallel electronic circuits 13 ′ with three optical semiconductor elements are arranged in three rows depending on the position and length of the half dicing line 14. C) shows an example in which one (D) of an electronic circuit 13 ′ in which three series electronic circuits of three optical semiconductor elements are arranged in parallel can be fabricated on the optical semiconductor element assembly substrate 12. Optical characteristic information for each optical semiconductor element 6 can be obtained by applying a current from the connection surface 15 to which the power supply probe is connected to the electronic circuit 13 ′ for inspecting the electrical current using a DC power source.

  In the half-diced state, the optical semiconductor device 3 is connected at the resin molding portion of the substrate and remains the optical semiconductor element assembly substrate 12. Thereafter, the optical semiconductor device 3 is completely singulated in a full dicing process. At this time, by using a dicing blade having a width different from the width of the dicing blade used in the half dicing process in the full dicing process, even if misalignment occurs in the full dicing process or the half dicing process, the individual pieces are completely separated. Can be

  FIG. 5 shows a bonding state between the optical semiconductor device 3 manufactured according to the present invention and the external substrate 19. The optical semiconductor device 3 has a groove 10 formed by half dicing, and a conductive adhesive 17 typified by solder is disposed in the groove. By arranging the adhesive 17 in the groove 10, the adhesive strength between the optical semiconductor device 3 and the external substrate 19 can be improved.

  FIG. 6 shows an energization inspection method and its optical property detection device 20 used in the present invention. In FIG. 6, an optical lens group 18 for detecting optical characteristics that matches the arrangement pitch of the optical semiconductor elements 6 on the half-diced optical semiconductor element assembly substrate 12 is used. By using this optical lens group 18, it becomes possible to sort out a plurality of optical semiconductor elements at a time, leading to a reduction in sorting man-hours.

  FIG. 7 shows a flow of manufacturing the optical semiconductor device 3 using the substrate 4 in which the resin is formed on the metal frame 1. FIG. 8 shows the optical semiconductor device 3 using the substrate 4 in which the resin is transfer-molded on the printed board 2. The manufacturing flow is shown.

  First, the optical semiconductor element assembly substrate 12 shown in FIG. 2 is manufactured. The optical semiconductor element assembly substrate 12 is obtained by mounting an optical semiconductor element on the substrate 4 having a current-carrying portion and sealing it with, for example, a silicone resin containing a phosphor. As shown in FIGS. 7A and 8A, in order to produce the substrate 4 having the current-carrying portion, the metal frame 1 and the printed board 2 that are subjected to electrolytic plating such as Ag, Au, Pd, and Ni are prepared. Next, as shown in FIGS. 7B and 8B, a resin 4 is transfer-molded on the metal frame 1 or a resin is transfer-molded on the printed board 2 to produce a substrate 4 having a current-carrying portion. At this time, it is preferable to transfer-mold a molding resin containing a metal oxide on the metal frame 1 or the printed board 2. In addition, when the metal frame 1 is used, a groove is formed in a part of the metal frame 1, in order to prevent resin chipping due to dicing burrs or chipping, particularly on a dicing line where a full dicing process or half dicing is performed. It is desirable to form a groove on the surface. In addition, it is desirable to use a printed board 2 in which a glass fiber material 16 is impregnated with a silicone resin or an epoxy resin in consideration of heat resistance and durability (see FIG. 1B).

  Moreover, it is preferable to arrange a pad joint suitable for the purpose in order to produce an electronic circuit by a half dicing process described later. Moreover, the heat resistance and UV resistance of an optical semiconductor device can be improved by using a silicone resin composition for molding resin. Furthermore, when an epoxy resin composition is used as the molding resin, the strength of the optical semiconductor device can be improved. The metal oxide is added as a reflective material, a reinforcing material, and a heat dissipation material.

  7C and 8C show a mounting process for obtaining the optical semiconductor element assembly substrate 12 by mounting a plurality of optical semiconductor elements 6 on the substrate 4 having the energization portion. For mounting, Au-Sn, solder, conductive paste, resin adhesive, and gold bumps can be used. Before mounting, plasma processing or UV treatment is applied to the substrate for improving the adhesive strength between the substrate and the optical semiconductor. It is desirable to perform ozone treatment. After mounting the optical semiconductor element on the substrate, wire bonding with Au wire is performed as necessary.

  Thereafter, as shown in FIGS. 7D and 8D, the optical semiconductor element 6 is resin-sealed using a resin containing a phosphor or the like. At this time, it is desirable to use a silicone resin for the sealing resin 9 for the purpose of improving heat resistance and durability, and it is preferable that the silicone resin contains a phosphor and an additive. In this case, the additive is not particularly limited, but is a material for adjusting viscosity and light scattering such as silica. Moreover, in order to improve the adhesive strength between the sealing resin 9 and the molded body 8 before resin sealing, it is desirable that the substrate 4 be subjected to plasma processing or UV ozone processing. After the resin sealing, the optical semiconductor element assembly substrate 12 is completed.

  The optical semiconductor element assembly substrate 12 has a surface on the side where the optical semiconductor element 6 and the molded product 8 are present, and a back surface on the external connection terminal 5 ′ side that connects the optical semiconductor device to an external substrate (not shown here). (See FIG. 1). First, as shown in FIGS. 7E and 8E, in the half dicing process, the back surface of the optical semiconductor element assembly substrate 12 is half-diced to cut off a part of the energization portion (half dicing portion 21), thereby forming the optical semiconductor element assembly. An electronic circuit for energization inspection is produced in the substrate. At this time, the width of the half dicing blade is preferably 0.4 to 0.5 mm. By carrying out the half dicing, the optical semiconductor element assembly substrate 12 can constitute an electronic circuit for energization inspection while maintaining its shape. In order to manufacture the target electronic circuit, it is preferable to confirm in advance the arrangement of the pad joints in the substrate. In this embodiment, the pad junction is arranged so that the optical semiconductor devices 3 are arranged in series.

  Thereafter, as shown in FIGS. 7F and 8F, in the energization inspection process, the electrical circuit is subjected to an energization inspection to obtain optical characteristic information for each optical semiconductor element, and then in the selection process, the optical characteristic information. Is used to select optical semiconductor elements. For example, an electric current is applied to the electronic circuit produced by the half dicing process using the connection surface 15 for connecting the power probe for energization inspection provided on the optical semiconductor element assembly substrate 12, and optical characteristic information is obtained by the energization inspection. Can do. In the energization inspection, not only the presence or absence of lighting, but also the light flux value, chromaticity, color temperature, wavelength spectrum, color rendering properties, etc. using an integrating sphere or luminance measuring device were confirmed and mounted on the optical semiconductor element assembly substrate 12 The optical semiconductor device is selected as it is. The optical characteristic information can be used not only for product selection but also for checking manufacturing defects and phosphor concentration variations, leading to quality improvement through in-process checks.

  After the current inspection, as shown in FIGS. 7G and 8G, in the full dicing process, the optical semiconductor element assembly substrate is divided into individual optical semiconductor devices by full dicing on the cutting line in the half dicing process, and sorted by optical characteristic information. A plurality of optical semiconductor devices can be obtained. For example, the optical semiconductor device 3 is completed by performing full dicing from the surface of the optical semiconductor element assembly substrate 12 and completely separating it. In this full dicing process, it is preferable to match the dicing line produced in the half dicing process with the dicing line by full dicing for individualization, and the dicing blade width used in the full dicing process is the dicing of the half dicing process. It is desirable to be different from the blade width. In particular, the width of the full dicing blade is preferably narrower than the width of the half dicing blade for the purpose of reducing the size of the collective substrate and ensuring the insulation between the PNs.

  For example, if it is recorded what optical characteristic information each optical semiconductor element has in the energization inspection process and the selection process, the semiconductor device can be classified immediately after the full dicing process.

  In the energization inspection, the optical characteristic detection optical lens group 18 matched to the arrangement pitch of the optical semiconductor elements arranged on the half-diced optical semiconductor element assembly substrate can be used. As this optical lens group, it is desirable to use an optical probe for luminance measurement represented by a CCD camera. As shown in FIG. 9, this optical probe is connected to a spectroscope (optical characteristic detection device 20) via an optical fiber 24 and the like, and processes optical characteristic information from an optical lens corresponding to each semiconductor device. It becomes possible. The tip of the optical lens has a cavity structure 23 surrounding the optical lens 22. By covering the optical semiconductor element with the cavity 23, it becomes possible to measure optical characteristic information without leaking light emitted from each optical semiconductor element. Thereby, it becomes possible to perform selection without interfering with other optical semiconductor element groups.

  EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated in detail, this invention is not limited to these.

[Example 1]
Using a 0.25 mm-thick Cu-based base material (Tamatsu 194 manufactured by Mitsubishi Shindoh), a connecting portion that connects the pads to each other is formed through an etching process, and a Ni / Pd / Au plated metal lead frame is manufactured. Using this substrate, the surface of the base is surface-treated with a plasma treatment of 50 W / 60 seconds, and the treated surface is resin-molded with a transfer molding machine to produce a substrate having a current-carrying portion. did.

  A silicone-based die bond material (manufactured by Shin-Etsu Chemical Co., Ltd .: trade name 632DA-1) is stamped and applied to the recess (reflector) formed by the molding, and a blue LED chip (TR350M series made by Cree) is mounted at 150 ° C. for 4 hours. And cured. Thereafter, wire bonding was performed with a 30 μm gold wire.

  Thereafter, an inner material obtained by kneading a yellow phosphor and a silicone resin (trade name: KJR-9022 manufactured by Shin-Etsu Chemical Co., Ltd.) is applied with a dispenser made by Musashi Engineering, and then thermally cured at 150 ° C. for 4 hours to obtain an optical semiconductor element assembly substrate. Was made. Thereafter, a half dicing process with a dicing blade thickness of 0.4 mm is performed on the back surface of the assembled substrate, the current-carrying portion is cut, and an electronic circuit in which 10 series of electronic semiconductor elements of 20 optical semiconductor elements are arranged in parallel on the assembled substrate. Was made. 50 mA was applied using a connection surface for connecting a current-carrying probe provided on the outer periphery of the collective substrate, and a current-carrying test using an integrating sphere was performed to obtain optical characteristic information. Thereafter, the collective substrate was separated into pieces by a full dicing process with a dicing blade of 0.2 mm, and 200 optical semiconductor devices selected based on the optical characteristic information could be obtained. Since it is not necessary to sort the optical semiconductor device after separation into pieces, a plurality of pieces of optical characteristic information can be obtained at one time, so that the process is simplified and the production efficiency is improved. It also led to a reduction in production costs.

[Example 2]
Three layers of 70 μm sheets are laminated per glass fiber impregnated with addition-curable phenyl group-modified silicone composition (made by Shin-Etsu Chemical Co., Ltd.) containing alumina (manufactured by ADMATEX: trade name AO-502) as a metal oxide. Then, using this as a base, a 75 μm copper layer was formed on the upper and lower surfaces, and a metal coating layer plated with Ni / Pd / Au was formed on the surface. Then, the connection area | region was formed in the etching process and the printed circuit board which has an electricity supply part was produced. Thereafter, an optical semiconductor device was obtained through the same transfer molding process, half dicing process, energization inspection process, sorting process, and full dicing process as in Example 1. There is no optical semiconductor device sorting step after separation, and a plurality of pieces of optical characteristic information can be obtained at a time, thereby simplifying the process and improving production efficiency. It also led to a reduction in production costs.

Example 3
In the same manner as the manufacturing method shown in Example 1, an optical semiconductor device using a vertical optical semiconductor (vertical type) and a flip-chip optical semiconductor element was manufactured. As a result, the process was simplified as in Example 1, and the production efficiency was improved.

Example 4
The optical semiconductor device manufactured in Example 1 and FR-4 (external substrate) were bonded using solder. After that, a thermal shock test (TSE-11-A made by ESPEC) was performed on the bonding state between the optical semiconductor device and FR-4 (external substrate), and 500 cycles and 1,000 cycles were performed at −40 ° C. to 150 ° C. The energization situation was investigated. The results are shown in Table 1. As shown in Table 1, it was found that the optical semiconductor device maintained a good adhesion state with the external substrate without the occurrence of non-lighting.

[Comparative Example 1]
Next, an optical semiconductor element assembly substrate was manufactured in the same manner as in Example 1, and an optical semiconductor device was manufactured by performing only the full dicing process without performing the half dicing process, the current-inspecting process, and the selection process. Thereafter, the separated optical semiconductor devices were arranged on a substrate through an adhesive, subjected to a current inspection, and selected based on the optical characteristic information. In such a method of manufacturing an optical semiconductor device, the process is complicated, and the production efficiency is reduced by about 20% compared to the first embodiment. Production costs also increased.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

  DESCRIPTION OF SYMBOLS 1 ... Metal frame, 2 ... Printed circuit board, 3 ... Optical semiconductor device, 4 ... Board | substrate, 5 ... Electrode, 5 '... External connection terminal, 6 ... Optical semiconductor element, 7 ... Bonding wire, 8 ... Molded article, 9 ... Sealing Stop resin, 10 ... groove by half dicing, 11 ... via, 12 ... optical semiconductor element assembly substrate, 13 ... energizing part, 13 '... electronic circuit, 14 ... half dicing line, 15 ... connection surface, 16 ... glass fiber material, DESCRIPTION OF SYMBOLS 17 ... Adhesive, 18 ... Optical lens group, 19 ... External board | substrate, 20 ... Optical characteristic detection apparatus, 21 ... Half dicing location, 22 ... Optical lens, 23 ... Cavity structure, 24 ... Optical fiber.

Claims (9)

A method for manufacturing an optical semiconductor device, comprising:
A mounting process for mounting an optical semiconductor element assembly substrate by mounting a plurality of optical semiconductor elements on a substrate having an energization part;
A half dicing step of cutting a part of the energization part and half-dicing the optical semiconductor element assembly substrate to produce an electronic circuit for energization inspection in the optical semiconductor element assembly substrate;
An energization inspection step for obtaining an optical characteristic information for each optical semiconductor element by conducting an energization inspection for the electronic circuit for the energization inspection,
A sorting step of sorting the optical semiconductor element using the optical characteristic information;
Full dicing step of dividing the optical semiconductor element assembly substrate into individual optical semiconductor devices by full dicing on the cutting line in the half dicing step, and obtaining a plurality of the optical semiconductor devices sorted by the optical characteristic information An optical semiconductor device manufacturing method comprising:   The method for manufacturing an optical semiconductor device according to claim 1, wherein in the energization inspection step, an energization inspection is performed using an optical characteristic detection device.   3. The optical semiconductor according to claim 1, wherein in the energization inspection step, an optical lens for detecting an optical characteristic is arranged so as to correspond to each optical semiconductor element, and the optical characteristic information is obtained. Device manufacturing method.   4. The substrate according to claim 1, wherein a substrate obtained by transfer molding a resin on a metal frame or a substrate obtained by transfer molding a resin on a printed board is used as the substrate having the current-carrying portion. Manufacturing method of optical semiconductor device.   5. The method of manufacturing an optical semiconductor device according to claim 4, wherein a substrate obtained by transfer molding a resin on the metal frame is a substrate having a groove in a portion where the metal frame is cut in the half dicing process.   5. The method of manufacturing an optical semiconductor device according to claim 4, wherein a substrate obtained by impregnating a resin into a fiber reinforcement laminated in three or more layers is used as the printed substrate.   7. The method of manufacturing an optical semiconductor device according to claim 1, wherein a dicing blade having a width different from a dicing blade width used in the half dicing step is used in the full dicing step. .   The electronic circuit for the energization inspection is manufactured so as to have a connection surface for connecting a power source probe used in the energization inspection process in the half dicing step. A manufacturing method of the optical semiconductor device according to the above.   An optical semiconductor device manufactured by the method for manufacturing an optical semiconductor device according to any one of claims 1 to 8.

Images