JP2013143518A - Placement structure of substrate and plasma processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a placement structure of a substrate and a plasma processing apparatus which control substrates to a desired temperature without complicating structures of electrodes for electrostatic attraction and wiring.SOLUTION: A placement structure of a substrate is composed of an electrostatic attraction plate 10 and a substrate tray 20. The substrate tray 20 has through holes 21 housing substrates W therein and protruding parts 22 which protrude from three positions on a lower surface of an edge part of each through hole 21 downward and toward the center side of the through hole 21 and support the substrate W on an upper surface. The electrostatic attraction plate 10 has: a flat surface; housing holes 11 which are formed so as to correspond to the protruding parts 22 and houses the protruding parts 22; pin holes 12 through which pins, moving up and down the substrate tray 20, respectively penetrate; and electrodes provided therein and electrostatically attracting the substrates W.

Description

  The present invention relates to a substrate mounting structure using a substrate tray and a plasma processing apparatus.

  When plasma processing is performed on the surface of a small-diameter substrate (for example, a substrate having a diameter of 50 mm) in a plasma processing apparatus capable of plasma processing a large area (for example, a substrate having a large diameter of 300 mm or the like), the substrate is used for transporting the substrate. The use of a tray is necessary. For example, in Patent Document 1, a small-diameter substrate is mounted in each of a plurality of through holes of a substrate tray, and the substrate tray is conveyed onto an electrostatic adsorption plate in a plasma processing apparatus in that state. In Patent Document 1, an island-shaped substrate mounting portion protruding from the surface of the electrostatic chucking plate is provided, and a desired process is performed by electrostatically attracting the substrate to the substrate mounting portion.

Japanese Patent No. 4781445

  Electrodes for electrostatic attraction include a monopolar type and a bipolar type. As in Patent Document 1, when a plurality of substrate placement portions for placing a substrate are formed in an island shape by projecting from the surface of the electrostatic adsorption plate, an electrostatic adsorption electrode is provided on each substrate placement portion. It is necessary to provide. Here, with reference to FIG. 8 and FIG. 9, problems of the conventional substrate mounting structure will be described. FIG. 8 is a schematic view showing the structure of an electrostatic attraction plate having a monopolar electrode for electrostatic attraction, and FIG. 9 shows the structure of an electrostatic attraction plate having a bipolar electrode for electrostatic attraction. FIG.

  For example, when the electrostatic chucking electrode is a single electrode, as shown in FIG. 8, each of the substrate mounting parts 51 in the columnar substrate mounting part 51 protruding from the surface of the electrostatic chucking plate 50. Are provided with circular electrodes 53, and each electrode 53 is connected to a power supply terminal 55 via a wiring 54. Reference numeral 52 denotes a pin hole through which the lift pin is inserted. In addition, when the electrostatic chucking electrode is bipolar, as shown in FIG. 9, the electrodes 56a and 56b are provided inside each substrate mounting portion 51, but the electrodes 56a and 56b are mutually connected. It is arrange | positioned so that it may become a comb-tooth shape. The electrode 56a and the electrode 56b are connected to the power supply terminal 58a and the power supply terminal 58b through the wiring 57a and the wiring 57b, respectively.

  As shown in FIGS. 8 and 9, when the substrate mounting portion is processed into an island shape or a groove is provided around the substrate mounting portion, even if it is a single electrode, a bipolar Even in this case, since the electrostatic chucking electrodes are provided independently inside each substrate mounting portion, the electrostatic chucking electrode is divided for each substrate mounting portion. For this connection, it was necessary to provide wiring below the electrostatic chucking electrode. For this reason, not only the electrostatic chucking electrode but also the wiring structure thereof is complicated, making its manufacture difficult and increasing the device cost.

  On the other hand, when the substrate mounting structure is not formed with an island-shaped substrate mounting portion and the entire surface is flat, it is difficult to control the substrate temperature. Here, with reference to FIG. 10, FIG. 11, the problem of this board | substrate mounting structure is demonstrated.

  As a substrate mounting structure, when the island-shaped substrate mounting portion is not formed and the entire surface is flat, that is, when the surface of the mounting plate 60 is flat, the substrate tray 65 mounted on the surface It is also necessary to make the lower surface of the plane flat. Unlike the substrate tray shown in Patent Document 1, the substrate tray 65 is provided with a counterbore 66 instead of a through hole. The substrate W is placed on the upper surface of the counterbore 66 so that the substrate W is displaced. I am trying not to. In addition, the code | symbol 61a has shown the contact position of the lift pin 61. FIG. Thus, since the countersink 66 of the substrate tray 65 exists between the substrate W and the mounting plate 60, the substrate W cannot be electrostatically adsorbed, and the electrostatic chucking electrode is placed on the mounting plate 60. There is no point in providing.

  When the substrate W and the substrate tray 65 are placed on the placement plate 60, the substrate tray 65 on which the plurality of substrates W are placed is placed on the placement plate using a robot arm (not shown) of the transfer robot. The mounting plate 60 is held by the plurality of lift pins 61 by raising the plurality of lift pins 61 that are transported above the robot 60 and operate in cooperation with the robot arm, and then the lift pins 61 are lowered to pin holes 62. When the lift pins 61 are accommodated inside the substrate tray 65, the substrate tray 65 and the substrate W are placed on the surface of the placement plate 60.

  In the case of such a substrate mounting structure, the temperature of the substrate W is determined by a balance between heat input from plasma generated by the plasma processing apparatus and heat transfer to the substrate tray 65. The temperature of the substrate tray 65 is also determined by the balance between heat input from the plasma and heat transfer to the mounting plate 60. Thus, two-stage heat transfer is required from the substrate W side to the placement plate 60 side, and since it is not electrostatically adsorbed, it is merely heat transfer by contact. As a result, there has been a problem that the temperature of the substrate W depends only on heat input from the plasma, and the substrate W cannot be controlled to a desired temperature.

  In the conventional substrate mounting structure, as shown in FIGS. 8 and 9, when an island-shaped substrate mounting portion or the like is formed on the electrostatic chucking plate, the structure of the electrostatic chucking electrode and wiring However, it is difficult to manufacture the device, which increases the cost of the apparatus. On the other hand, as shown in FIGS. 10 and 11, when the surface of the mounting plate is a flat surface, there is a problem that the substrate cannot be controlled to a desired temperature.

  The present invention has been made in view of the above problems, and provides a substrate mounting structure and a plasma processing apparatus that can control the substrate to a desired temperature without complicating the structure of the electrostatic chucking electrode and wiring. The purpose is to do.

The substrate mounting structure according to the first invention for solving the above-mentioned problems is
A substrate tray for placing and transporting a plurality of substrates, and an electrostatic chucking plate for placing the substrate trays together with the plurality of substrates,
The substrate tray protrudes downward from at least three locations of a plurality of through holes each containing the substrate inside and a lower surface of an edge portion of the through hole and on the center side of the through hole. And a protrusion to support the
The electrostatic attraction plate is formed on the surface corresponding to the protrusion, a plurality of receiving holes for receiving the protrusion, and at least three pins through which the pins for raising and lowering the substrate tray pass. A pin hole and an electrode for electrostatically adsorbing the substrate provided inside;
When the substrate tray is placed on the electrostatic attraction plate, the protrusion is accommodated in the accommodation hole, and the plurality of substrates and the substrate tray are placed directly on the surface of the electrostatic attraction plate. It is characterized by.

The substrate mounting structure according to the second invention for solving the above-mentioned problems is as follows.
In the substrate mounting structure according to the first invention,
The upper surface of the protruding portion is lower than the lower surface of the substrate tray.

A substrate mounting structure according to a third invention for solving the above-described problems is as follows.
In the substrate mounting structure according to the first or second invention,
The accommodation hole is a hole penetrating the electrostatic adsorption plate.

A substrate mounting structure according to a fourth invention for solving the above-described problems is as follows.
In the substrate mounting structure according to any one of the first to third inventions,
The pin hole is also used as a part of the accommodation hole.

A substrate mounting structure according to a fifth aspect of the present invention for solving the above problem is as follows.
In the substrate mounting structure according to the fourth invention,
A holding portion corresponding to the shape of the lower portion of the protruding portion is provided at the upper end of the pin.

A substrate mounting structure according to a sixth invention for solving the above-described problems is as follows.
In the substrate mounting structure according to any one of the first to fifth inventions,
The thickness of the substrate tray is made larger than the thickness of the substrate, and the thickness of the edge portion of the through hole is made equal to or less than the thickness of the substrate.

A substrate mounting structure according to a seventh invention for solving the above-described problem is
In the substrate mounting structure according to the sixth invention,
An inclined surface that is inclined toward the edge portion of the through hole is provided on the upper surface of the substrate tray around the through hole.

A plasma processing apparatus according to an eighth invention for solving the above-mentioned problems is as follows.
The substrate mounting structure according to any one of the first to seventh inventions,
The temperature of the plurality of substrates is controlled through the electrostatic chucking plate, and plasma processing is performed on the plurality of substrates.

  According to the present invention, a plurality of through holes are provided in the substrate tray, and a protrusion for supporting the substrate is provided on the lower surface of the edge portion of the through hole, while the surface of the electrostatic adsorption plate on which the substrate tray is placed is flattened. Since the accommodation hole is provided on the surface of the electrostatic adsorption plate corresponding to the protrusion, when the substrate tray is placed on the electrostatic adsorption plate, the protrusion is accommodated in the accommodation hole, and the substrate and the substrate tray Is directly placed on the surface of the electrostatic chucking plate, and the entire surface of the lower surface of the substrate can be brought into contact with the surface of the electrostatic chucking plate for electrostatic chucking. As a result, the temperature distribution in the surface of the substrate can be made uniform and controlled to a desired substrate temperature, the influence on the process caused by the substrate temperature can be reduced, and the performance of the plasma processing apparatus can be improved. For example, if the plasma processing apparatus is a plasma CVD apparatus, it is possible to improve film quality and productivity at the time of film formation.

  Also, since the tolerance of positioning accuracy when placing the substrate tray on the electrostatic chucking plate is large, the processing accuracy of the electrostatic chucking plate and the substrate tray can be relaxed, and the operation accuracy specifications of the transfer robot can be relaxed. Therefore, the cost of the plasma processing apparatus can be reduced.

  In addition, regardless of whether it is a single electrode or a bipolar electrode, the electrode for electrostatic attraction can be provided on the entire surface of the electrostatic attraction plate, so that the arrangement position is not affected by the substrate diameter or the substrate placement position. In addition, the connection position of the power supply terminal for power supply may be an arbitrary position, and the design and manufacture thereof can be facilitated, and the manufacturing cost can be reduced.

It is a figure which shows an example (Example 1) of embodiment of the mounting structure of the board | substrate which concerns on this invention, and is a top view which shows the electrostatic attraction board and a substrate tray. It is sectional drawing explaining the mounting structure of the board | substrate using the electrostatic attraction board and substrate tray shown in FIG. 1, (a) is sectional drawing just before mounting of a board | substrate and a substrate tray, (b) It is sectional drawing after mounting a board | substrate and a board | substrate tray. It is a figure which shows the electrode for unipolar electrostatic attraction provided in the electrostatic attraction board shown in FIG. 1, (a) is a perspective view from a side surface, (b) is a perspective view from an upper surface. It is a figure which shows the electrode for bipolar electrostatic attraction provided in the electrostatic attraction board shown in FIG. 1, (a) is a perspective view from a side surface, (b) is a perspective view from an upper surface. It is a figure which shows another example (Example 2) of embodiment of the mounting structure of the board | substrate which concerns on this invention, and is a top view which shows the electrostatic attraction board. FIG. 7 is a cross-sectional view for explaining a substrate mounting structure when the electrostatic attraction plate shown in FIG. 6 is used, (a) is a cross-sectional view immediately before mounting the substrate and the substrate tray, and (b) is a substrate. It is sectional drawing after mounting of a substrate tray. It is a figure which shows another example (Example 3) of embodiment of the board | substrate mounting structure which concerns on this invention, and is sectional drawing explaining the board | substrate mounting structure after mounting a board | substrate and a board | substrate tray. It is a figure which shows the electrode for a monopolar electrostatic attraction provided in the conventional electrostatic attraction board, (a) is a perspective view from a side surface, (b) is a perspective view from an upper surface. It is a figure which shows the electrode for bipolar electrostatic attraction provided in the conventional electrostatic attraction board, (a) is a perspective view from a side surface, (b) is a perspective view from an upper surface. It is a top view which shows the conventional board | substrate tray. It is sectional drawing explaining the mounting structure of the board | substrate at the time of using the conventional electrostatic attraction board shown in FIG. 10, (a) is sectional drawing just before mounting of a board | substrate and a board | substrate tray, (b) is. It is sectional drawing after mounting of a board | substrate and a board | substrate tray.

  Hereinafter, embodiments of a substrate mounting structure and a plasma processing apparatus according to the present invention will be described with reference to FIGS.

  In the following description, although illustration and detailed description are omitted, the substrate mounting structure according to the present invention has a plasma processing apparatus that requires temperature control of the substrate, such as a dry etching apparatus or plasma CVD (Chemical Vapor Deposition). The present invention can be applied to semiconductor manufacturing apparatuses including devices, LED (Light Emitting Diode) manufacturing apparatuses, MEMS (Micro Electro Mechanical Systems) manufacturing apparatuses, and the like. The substrate mounting structure according to the present invention includes an electrostatic chuck plate and a substrate tray. By replacing the electrostatic chuck plate and the substrate tray according to the size of the substrate to be used, the existing plasma processing is performed. It can also be attached to the device. Therefore, here, the substrate mounting structure according to the present invention will be described with reference to the electrostatic attraction plate and the substrate tray constituting the mounting structure.

Example 1
The board | substrate mounting structure of a present Example is demonstrated with reference to FIGS. Here, FIG. 1 is a top view showing an electrostatic attraction plate and a substrate tray constituting the substrate mounting structure of the present embodiment. FIG. 2 is a cross-sectional view illustrating a substrate mounting structure using the electrostatic attraction plate and the substrate tray shown in FIG. 1, and FIG. 2 (a) is a state immediately before the substrate and the substrate tray are mounted. Sectional drawing and FIG.2 (b) are sectional drawings after mounting a board | substrate and a board | substrate tray. FIGS. 3 and 4 are diagrams showing monopolar and bipolar electrostatic adsorption electrodes provided on the electrostatic adsorption plate shown in FIG. 1, respectively. FIGS. 3 (a) and 4 (a) are diagrams. FIG. 3B and FIG. 4B are perspective views from the top.

  The substrate mounting structure of this embodiment has a disk-shaped electrostatic chucking plate 10A and a substrate tray 20A. The electrostatic attraction plate 10A is formed of a dielectric made of ceramics (for example, aluminum nitride (AlN)) and the surface thereof is a flat surface. A plurality of receiving holes 11 are provided on this surface, which will be described later. The protrusion 22 of the substrate tray 20A is accommodated.

  The position, shape, size, depth, and the like of the accommodation hole 11 are formed corresponding to the number, position, shape, size, and the like of the protrusions 22 described later, and the protrusions 22 are placed on the substrate tray 20A. It is formed corresponding to the number, position, shape, size, etc. of the substrate W to be formed. Since the protrusions 22 are provided to support the outer peripheral portion of the substrate W, the corresponding accommodation holes 11 are also formed in the outer peripheral portion of the substrate W during placement, and the innermost position of the accommodation hole 11 is the placement position. It will be arranged inside the outer edge of the substrate W at the time. Further, since at least three protrusions 22 are required to support one substrate W, at least three corresponding receiving holes 11 may be formed for each substrate W. In the present embodiment, three accommodation holes 11 are formed for one substrate W corresponding to the protrusion 22.

  The accommodation hole 11 does not need to guide the protruding portion 22, and is therefore sized to accommodate the protruding portion 22 and not to contact the protruding portion 22. For example, in order to absorb the deviation due to the conveyance accuracy of the conveyance robot that conveys the substrate tray 20A, the deviation due to the thermal expansion of the substrate tray 20A, the deviation due to the processing accuracy, the size of the accommodation hole 11 is the size of the protrusion 22. It is sufficient that the size is the sum of these deviations or larger. However, since the temperature control of the substrate W is performed, it is desirable that the size of the accommodation hole 11 is a size that does not affect the temperature control of the substrate W.

  The housing hole 11 is a bottomed hole as shown in FIGS. 2 (a) and 2 (b). However, as shown in FIG. 2 (b), the depth of the bottom of the housing hole 11 is set to a protruding portion. It is deeper than the lower end of 22 so that the protruding portion 22 does not contact the accommodation hole 11. By adopting such a configuration, the substrate tray 20A does not float from the surface of the electrostatic attraction plate 10A, that is, the entire lower surface of the substrate tray 20A is in contact with the entire surface of the electrostatic attraction plate 10A. .

  When the substrate mounting structure of this embodiment is used in a plasma CVD apparatus, a film is also deposited on the surface (particularly the bottom portion) of the accommodation hole 11 during film formation on the substrate W. As described above, Since the accommodation hole 11 has such a size and depth that it does not come into contact with the protrusion 22, the film deposited on the surface of the accommodation hole 11 is not peeled off, and generation of particles and adhesion to the substrate W are prevented. be able to.

  Furthermore, the accommodation hole 11 may not be a bottomed hole but may be a hole penetrating the electrostatic attraction plate 10A. In this case, there is little deposition of the film on the surface (side wall surface) of the accommodation hole 11, and even if the deposit accumulates on the bottom portion, the bottom is deep and the deposit is difficult to scatter. Generation and adhesion to the substrate W can be further prevented. In addition, since the pin hole 12 to be described later is blocked by the substrate tray 20A, deposits do not accumulate therein.

  Further, a plurality of pin holes 12 (in this embodiment) penetrate the electrostatic attraction plate 10A in a portion close to the outer periphery of the electrostatic attraction plate 10A and avoid a region where the substrate W is placed. 3), and lift pins 13 for raising and lowering the substrate tray 20A are inserted into the pin holes 12. The pin holes 12 may be formed according to the number, position, shape, etc. of the lift pins 13, and since at least three lift pins 13 for raising and lowering the substrate tray 20A are necessary, at least three pin holes may be formed.

  In this way, since the necessary number of receiving holes 11 and pin holes 12 are provided on the surface of the flat electrostatic attraction plate 10A, it is necessary to scrape the island-shaped substrate mounting portion as in Patent Document 1. Therefore, flatness is easily obtained and processing is easy.

  Although details will be described later with reference to FIG. 3, the electrode 14 for unipolar electrostatic adsorption is embedded not only directly under the substrate W to be placed but also over the entire surface of the electrostatic adsorption plate 10A. Therefore, by applying a voltage to the electrostatic chucking electrode 14, all the substrates W are electrostatically chucked on the surface of the electrostatic chucking plate 10A. Then, the substrate W transported using the substrate tray 20A described later has a substantially entire lower surface (the entire lower surface excluding a portion corresponding to the accommodation hole 11) directly in contact with the surface of the electrostatic attraction plate 10A. The substantially entire lower surface is evenly electrostatically attracted.

  10 A of electrostatic attraction plates of the structure mentioned above are attached to the upper surface of the support stand 15 arrange | positioned inside processing containers, such as a plasma CVD apparatus. In order to control the temperature of the substrate W, a temperature control mechanism, for example, a heater or a flow path through which a refrigerant flows is provided inside the support base 15. Accordingly, the temperature of the temperature control mechanism inside the support base 15 is controlled, and the substrate W is brought to a desired temperature by bringing the substantially entire lower surface of the substrate W into close contact with the surface of the electrostatic chucking plate 10A by electrostatic chucking. While controlling, the temperature distribution in the surface of the substrate W can be made uniform.

  Since the electrostatic attraction plate 10 </ b> A having the above-described configuration has a structure that can be attached to the upper surface of the support base 15, it can also be applied to an existing plasma processing apparatus. For example, if the existing plasma processing apparatus is compatible with a large-diameter substrate, for example, a substrate having a diameter of 300 mm (12 inches), the electrostatic chucking plate is used as an electrostatic chuck corresponding to the small-diameter substrate W. If the plate 10A is replaced, it is possible to easily cope with substrates of different sizes. The small-diameter substrate W is not limited to silicon (Si), but includes compound semiconductors such as gallium arsenide (GaAs), silicon carbide (SiC), quartz, sapphire, and the like, for example, with a size of 50 mm (2 inches). Become.

  A plurality (six in this embodiment) of circular through holes 21 are formed in the substrate tray 20A so as to penetrate the substrate tray 20A. The through holes 21 are formed corresponding to the number, position, shape, size, and the like of the substrate W. Reference numeral 13a indicates a contact position of the lift pin 13 that moves up and down the substrate tray 20A.

  In addition, a plurality of projecting portions 22 projecting toward the center side of the through hole 21 and the lower side of the substrate tray 20A are provided at the edge portion of the through hole 21 and on the lower surface side of the substrate tray 20A. In the embodiment, three are formed per through hole 21). The projecting portion 22 supports the substrate W by placing the substrate W on the upper support surface 22a. The protruding portion 22 is also formed corresponding to the number, position, shape, size, and the like of the substrate W. In order to support the substrates W, at least three of the substrates W may be formed.

  Then, when the substrate W is disposed inside the through hole 21 of the substrate tray 20A, in this embodiment, the substrate W is placed on the support surfaces 22a of the three protrusions 22, but FIG. As shown in FIG. 3, the support surface 22a is positioned below the lower surface of the substrate tray 20A, and when the substrate W is placed on the protruding portion 22, the lower surface of the substrate W is lower than the lower surface of the substrate tray 20A. It is like that. This is to prevent the protruding portion 22 from contacting the lower surface of the substrate W when the protruding portion 22 is received in the receiving hole 11 as shown in FIG.

  Further, the length from the inner wall of the through hole 21 to the tip of the protrusion 22, that is, the length to the tip of the support surface 22 a is the outer edge of the substrate W and the through hole when the substrate W is arranged at the center of the through hole 21. When the distance between the gaps of the inner wall 21 is G, it is desirable that the length is 2 × G or more. The difference in height between the lower surface of the substrate tray 20A and the support surface 22a is preferably smaller than the thickness of the substrate W. Thereby, even if the substrate W is biased and placed inside the through hole 21, the substrate W does not fall from the support surface 22a. That is, as long as the substrate W can be placed inside the through hole 21, the placement accuracy may not be high. For example, the substrate W may be placed by a human hand.

  When the substrate tray 20A is placed on the surface of the electrostatic attraction plate 10A, the protrusion 22 of the substrate tray 20A is accommodated in the accommodation hole 11 of the electrostatic attraction plate 10A. The substrate W is directly placed on the surface and is brought into close contact by the electrostatic adsorption described above.

The substrate tray 20A having such a structure is formed of a ceramic material such as alumina (Al ₂ O ₃ ), SiC, or AlN, a metal such as anodized aluminum, or the like, and the protruding portion 22 is formed with the substrate tray 20A. Since it has a structure that is cut out integrally or is attached later with screws or the like, its production is not difficult. Further, the thickness of the substrate tray 20A is substantially the same as or thinner than the thickness of the substrate W. In this way, the gas used in the plasma processing flows smoothly around the substrate W.

  In this embodiment, as shown in FIG. 1, a circular substrate W is illustrated, and the diameter is smaller than the electrostatic chucking plate 10A and the substrate tray 20A (diameter less than the radius of the electrostatic chucking plate 10A and the substrate tray 20A). 6 can be placed on the electrostatic chuck 10A and the substrate tray 20A, but the shape of the substrate W may be other shapes, for example, a rectangular shape, and the number of substrates W to be placed is also the same. Depending on its shape and size, it may be appropriately changed.

  Next, the state before and after mounting the substrate W and the substrate tray 20A on the electrostatic attraction plate 10A will be described with reference to FIGS. Here, the description will be made assuming that the plasma processing apparatus is a plasma CVD apparatus.

  A substrate tray 20A on which a plurality of substrates W are placed is transported using a robot arm of a transport robot. During this transport, the substrate tray 20A itself is positioned (centering and direction determination) using an alignment mechanism provided in the plasma CVD apparatus. For example, a notch may be provided at one position on the outer periphery of the substrate tray 20A, and the outer periphery and the notch of the substrate tray 20A may be detected to center and determine the direction of the substrate tray 20A. Thereafter, the substrate tray 20A is transported above the electrostatic adsorption plate 10A attached to the support base 15 in the processing container of the plasma CVD apparatus.

  Thus, the substrate tray 20A is positioned using the alignment mechanism, and is placed on the electrostatic attraction plate 10A within a predetermined error range by the robot arm of the transfer robot. Therefore, each substrate W only needs to be placed inside the through hole 21 of the substrate tray 20A, and the substrate tray 20A only needs to perform at least the function of transporting the substrate W. That is, when the substrate tray 20A is placed on the electrostatic attraction plate 10A, high transport accuracy, high placement accuracy of the substrate W, high processing accuracy of the electrostatic attraction plate 10A and the substrate tray 20A, and the like are not required. Easy to set up and maintain.

  The substrate tray 20A conveyed above the electrostatic chucking plate 10A is lifted up by the lift pins 13 as shown in FIG. At this time, the positional relationship between the electrostatic attraction plate 10 </ b> A and the substrate tray 20 </ b> A is such that the protruding portion 22 is positioned above the accommodation hole 11.

  When the lift pins 13 are lowered, the substrate tray 20A together with the substrate W is placed on the surface of the electrostatic attraction plate 10A. Since the substrate tray 20A is placed within a predetermined error range by the alignment mechanism and the transfer robot, the protrusion 22 is accommodated in the accommodation hole 11 as shown in FIG. 20A is directly placed on the surface of the electrostatic attraction plate 10A. In this state, a voltage is applied to the electrostatic chucking electrode 14 and the substrate W is electrostatically attracted to the surface of the electrostatic chuck plate 10A. Therefore, substantially the entire lower surface of the substrate W (excluding the portion corresponding to the accommodation hole 11). The entire lower surface) is in direct contact with the surface of the electrostatic chuck plate 10A and is electrostatically adsorbed.

  Then, a film forming process using plasma is performed in a processing vessel of the plasma CVD apparatus, and a desired film is formed on the substrate surface. At this time, the substantially entire lower surface of the substrate W is electrostatically attracted to the surface of the electrostatic chuck plate 10A and is in direct contact therewith, so that the temperature distribution in the surface of the substrate W is made uniform and a desired temperature is obtained. Can be controlled.

  As described above, since the temperature distribution in the surface of the substrate W is made uniform and can be controlled to a desired temperature, adverse effects on the process can be reduced, and the performance of apparatuses such as a plasma CVD apparatus can be improved. Can be planned. During film formation, a film may be formed on the lower surface of the substrate W at the portion of the accommodation hole 11, but this is limited to the range of the lower surface of the substrate W corresponding to the accommodation hole 11, The influence can also be suppressed. In addition, since the tolerance of the positioning accuracy of the substrate tray 20A itself is large, the specification of the operation accuracy of the transfer robot can be relaxed, and the cost of the apparatus such as a plasma CVD apparatus can be reduced.

  After the film formation process by plasma, the voltage application to the electrostatic attraction electrode 14 is stopped, and then the lift pins 13 are raised. As the lift pins 13 are raised, the substrate tray 20A is raised, and the substrate W is lifted to the support surface 22a of the protrusion 22 so that the substrate W is detached from the electrostatic attraction plate 10A.

  Next, the structure of the electrostatic attraction electrode provided on the electrostatic attraction plate 10A will be described with reference to FIG. 3 for a single electrode and FIG. 4 for a bipolar electrode.

  In the case where a single electrode for electrostatic attraction is provided on the electrostatic attraction plate 10A, in this embodiment, one electrostatic attraction electrode 14 having a circular plane shape is provided over the entire inner surface of the electrostatic attraction plate 10A. The power feeding terminal 16 is connected to one place on the lower surface of the electrostatic attraction electrode 14. In order to form the accommodation hole 11 and the pin hole 12 in the electrostatic attraction plate 10A, holes corresponding to the accommodation hole 11 and the pin hole 12 are also formed in the electrostatic attraction electrode 14. Even if it is provided, a voltage can be applied to the entire electrostatic attraction electrode 14.

  In this way, one electrostatic flat electrode 14 for electrostatic attraction is provided on the entire inner surface of the electrostatic attraction plate 10A. That is, the electrostatic chucking electrode 14 is disposed not only in the region where the substrate W is placed but also in the region where the substrate tray 20A is placed. Therefore, unlike the configuration shown in FIG. 8, the arrangement position of the electrostatic attraction electrode 14 is not affected by the substrate diameter or the placement position of the substrate, and the connection position of the power supply terminal 16 is also arbitrary. The position may suffice, and the design and manufacture thereof can be facilitated, and the manufacturing cost can be reduced.

  Further, in the case where bipolar electrostatic chucking electrodes are provided on the electrostatic chucking plate 10A, in this embodiment, electrostatic chucking is arranged alternately in the form of comb teeth over the entire inner surface of the electrostatic chucking plate 10A. The electrodes 17a and 17b are embedded, and further, power supply plates 18a and 18b are embedded on the lower side thereof, and are connected to the power supply terminals 19a and 19b via the power supply plates 18a and 18b, respectively. That is, the electrostatic adsorption electrodes 17a and 17b and the power feeding plates 18a and 18b have a two-layer electrode structure.

  As an example, in FIG. 4, the electrostatic attraction electrode 17a serving as a positive electrode includes a cross-shaped electrode that traverses the circular electrostatic attraction plate 10A vertically and horizontally, and an outer periphery of the electrostatic attraction plate 10A from the cross-shaped electrode. It is composed of an electrode group extending in a cedar leaf shape (herringbone shape) toward the side, and the tip portion of this electrode group is connected to a plate ring-shaped power supply plate 18a provided on the outer peripheral side of the electrostatic attraction plate 10A. The power feeding terminal 19a is connected to one place on the lower surface of the power feeding plate 18a. Further, the electrostatic attraction electrode 17b serving as a negative electrode includes a circular electrode disposed on the outer peripheral side of the electrostatic attraction plate 10A and an electrode group extending from the circular electrode toward the inside of the electrostatic attraction plate 10A. The tip of this electrode group is connected to a circular power supply plate 18b provided on the center side of the electrostatic attraction plate 10A, and a power supply terminal 19b is connected to one place on the lower surface of the power supply plate 18b. doing.

  That is, the electrode group constituting the electrostatic attraction electrode 17a can be fed from both the cross-shaped electrode and the power supply plate 18a, and the electrode group constituting the electrostatic attraction electrode 17b is also a circular electrode. And a power supply plate 18b. The accommodation hole 11 and the pin hole 12 (not shown in FIG. 4) are preferably arranged between the electrostatic adsorption electrode 17a and the electrostatic adsorption electrode 17b, but correspond to the accommodation hole 11 and the pin hole 12. By forming a hole to be fed, even if a part of the electrode group constituting the electrode for electrostatic attraction 17a is cut, power can be supplied from either the cross-shaped electrode or the power feeding plate 18a. Even if a part of the electrode group constituting the electrode 17b is cut, all the electrodes and electrodes constituting the electrostatic chucking electrodes 17a and 17b can be fed from either the circular electrode or the power feeding plate 18b. A voltage can be applied to the group.

  In this way, the electrostatic chucking electrodes 17a and 17b are provided on the entire inner surface of the electrostatic chucking plate 10A. That is, the electrostatic chucking electrodes 17a and 17b are disposed not only in the region where the substrate W is placed but also in the region where the substrate tray 20A is placed. Therefore, unlike the configuration shown in FIG. 9, the placement positions of the electrostatic chucking electrodes 17a and 17b are not affected by the substrate diameter or the placement position of the substrate, and the connection of the power supply terminals 19a and 19b. The position may be an arbitrary position, and the design and manufacture thereof are facilitated, and the manufacturing cost can be reduced.

(Example 2)
The substrate mounting structure of this embodiment will be described with reference to FIGS. Here, FIG. 5 is a top view showing the electrostatic chucking plate constituting the substrate mounting structure of the present embodiment. FIG. 6 is a cross-sectional view illustrating a substrate mounting structure using the electrostatic attraction plate shown in FIG. 5, and FIG. 6A is a cross-sectional view immediately before mounting the substrate and the substrate tray. FIG. 6B is a cross-sectional view after placing the substrate and the substrate tray.

  In the substrate mounting structure of the present embodiment, the substrate tray 20A described in the first embodiment is used as the substrate tray, but the electrostatic chucking plate 10B constituting the substrate mounting structure of the present embodiment is an example. 1 is different from the electrostatic attraction plate 10 </ b> A described in 1. Here, the same components as those of the electrostatic attraction plate 10 </ b> A described in the first embodiment are denoted by the same reference numerals, and redundant description is omitted.

  Also in the present embodiment, the electrostatic attraction plate 10B has a disk shape and is formed of a dielectric material such as ceramics, and the surface thereof is a flat surface. A plurality of accommodation holes 11 for accommodating the protrusions 22 of the substrate tray 20A described above are provided on this surface, but some of the accommodation holes 11 are also used as pin holes 12 through which the lift pins 13 are inserted. That is, the total number of the accommodation holes 11 and the pin holes 12 is smaller than that of the electrostatic attraction plate 10 </ b> A shown in the first embodiment, and the man-hour for drilling can be reduced.

  Usually, since the pin hole 12 is disposed in a portion near the outer periphery of the electrostatic attraction plate 10B, the accommodation hole 11 near the outer periphery of the electrostatic attraction plate 10B may be used also as the pin hole 12, and the substrate tray 20A is Since at least three lift pins 13 to be moved up and down are required, at least three receiving holes 11 may be used also as the pin holes 12. In this embodiment, the three accommodation holes 11 close to the outer periphery of the electrostatic attraction plate 10B are also used as the pin holes 12.

  In this way, since some of the accommodation holes 11 are also used as the pin holes 12, the lift pins 13 hold the protruding portions 22 of the substrate tray 20A, and the substrate tray 20A is moved up and down. Therefore, a holding portion 13 b that holds the protruding portion 22 is provided at the upper end of the lift pin 13 corresponding to the shape of the protruding portion 22. For example, in the present embodiment, since the lower part of the protruding part 22 has a convex shape, the upper part of the holding part 13b has a concave shape, and has a male / female relationship, whereby the position of the protruding part 22 with respect to the pin hole 12 is determined. It becomes possible to correct. The male / female relationship may be reversed, and the lower portion of the protruding portion 22 may be concave and the upper portion of the holding portion 13b may be convex.

  When the substrate mounting structure of this embodiment is used in a plasma CVD apparatus, the accommodation hole 11 is the same as that of Embodiment 1, and generation of particles and adhesion to the substrate W can be prevented. In addition, the pin hole 12 also serving as the accommodation hole 11 has little film deposition on the surface (side wall surface), and even if the deposit accumulates on the bottom portion, the bottom is deep and the deposit is Since it is difficult to scatter, generation | occurrence | production of a particle and adhesion to the board | substrate W can further be prevented.

  Also in the present embodiment, the accommodation hole 11 may not be a bottomed hole but may be a hole penetrating the electrostatic attraction plate 10B. That is, only the pin hole 12 that is also used as the accommodation hole 11 may be a hole that penetrates the electrostatic adsorption plate 10B, or all the accommodation holes 11 and the pin holes 12 may be holes that penetrate the electrostatic adsorption plate 10B. .

  Also, in the electrostatic chucking plate 10B of the present embodiment, as in the first embodiment, a monopolar or bipolar electrostatic chucking electrode can be applied. For example, the configuration described with reference to FIGS. The electrode for electrostatic attraction can be applied. In the present embodiment, since the total number of the accommodation holes 11 and the pin holes 12 is reduced, the design and manufacture becomes easier especially when a bipolar electrode for electrostatic attraction is applied.

  Next, with reference to FIGS. 6A and 6B, the state before and after the substrate W and the substrate tray 20A are placed on the electrostatic attraction plate 10B will be described.

  When the substrate tray 20A on which a plurality of substrates W are placed is transported using the robot arm of the transport robot, the substrate tray 20A is positioned (centering and direction determination), and then placed on the support base 15 in the processing container of the plasma processing apparatus. The substrate tray 20A is transported above the attached electrostatic chucking plate 10B.

  The substrate tray 20A transported above the electrostatic attraction plate 10B raises the lift pin 13, so that the lower portion of the protrusion 22 is held by the holding portion 13b of the lift pin 13 as shown in FIG. The lift pins 13 are lifted up. At this time, since the lower portion of the protruding portion 22 is convex and the upper portion of the holding portion 13b is concave, the position of the protruding portion 22 with respect to the pin hole 12 can be corrected, and the electrostatic chucking plate 10B and the substrate tray As for the positional relationship of 20A, the protrusion 22 is positioned above the pin hole 12. And the other protrusion part 22 will be located above the accommodation hole 11, as shown to Fig.2 (a).

  When the lift pins 13 are lowered, the substrate tray 20A together with the substrate W is placed on the surface of the electrostatic attraction plate 10B. Since the substrate tray 20A is placed within a predetermined error range, as shown in FIG. 6B, the protrusion 22 is accommodated in the pin hole 12, and the other protrusion 22 is accommodated in the accommodation hole 11. Thus, the substrate tray 20A is placed directly on the surface of the electrostatic attraction plate 10B together with the substrate W. In this state, a voltage is applied to the electrostatic chucking electrode 14 and the substrate W is electrostatically attracted to the surface of the electrostatic chuck plate 10B, so that the entire bottom surface of the substrate W (corresponding to the accommodation hole 11 and the pin hole 12). The entire lower surface excluding the portion to be directly in contact with the surface of the electrostatic chuck plate 10B and electrostatically adsorb.

  Thereafter, in the plasma processing apparatus, for example, a film forming process is performed, and a desired film is formed on the substrate surface. At this time, substantially the entire lower surface of the substrate W is electrostatically attracted to the surface of the electrostatic chuck plate 10B and is in direct contact therewith, so that the temperature distribution in the surface of the substrate W is made uniform and a desired temperature is achieved. Can be controlled.

  As described above, since the temperature distribution in the surface of the substrate W can be made uniform and controlled to a desired temperature, adverse effects on the process can be reduced and the performance of the plasma processing apparatus can be improved. it can. In the case where the film forming process is performed, a film may be formed on the lower surface of the substrate W in the accommodation hole 11 and the pin hole 12, which corresponds to the accommodation hole 11 and the pin hole 12. The effect is limited to the range of the lower surface of the substrate W to be suppressed. In addition, since the tolerance of the positioning accuracy of the substrate tray 20A itself is large, the specification of the operation accuracy of the transfer robot can be relaxed, and the cost of the plasma processing apparatus can be reduced.

  After the plasma treatment, voltage application to the electrostatic chucking electrode 14 is stopped, and then the lift pins 13 are raised. As the lift pins 13 are raised, the lower portion of the protrusion 22 is held by the holding portion 13b, the substrate tray 20A is raised, and the substrate W is lifted to the support surface 22a of the protrusion 22 to electrostatically attract the substrate W. Desorption from the plate 10B is performed.

(Example 3)
The substrate mounting structure of this embodiment will be described with reference to FIG. Here, FIG. 7 is a cross-sectional view illustrating a substrate mounting structure using the substrate tray of the present embodiment, and is a cross-sectional view after the substrate and the substrate tray are mounted.

  In the substrate mounting structure of the present embodiment, the electrostatic chucking plate 10A described in the first embodiment or the electrostatic chucking plate 10B described in the second embodiment is used as the electrostatic chucking plate. A substrate tray 20B constituting an example substrate mounting structure is different from the substrate tray 20A described in the first embodiment. Here, the same components as those of the substrate tray 20 </ b> A described in the first embodiment are denoted by the same reference numerals, and redundant description is omitted.

  In the first embodiment, the thickness of the substrate tray 20A is substantially the same as or thinner than the thickness of the substrate W. By doing so, the gas used in the plasma processing is around the substrate W. It will flow smoothly. When the substrate W has a small diameter, the thickness thereof is also relatively thin (for example, 0.5 mm), and the thickness of the substrate tray 20A is similarly reduced. In this case, it is difficult to produce the substrate tray 20A with ceramics. Further, even if it can be made of a material such as a soft metal (for example, aluminum), the strength cannot be ensured and it bends, making it difficult to carry it.

  Therefore, in the substrate tray 20B of the present embodiment, the basic configuration, for example, the through hole 21 and the protruding portion 22 are the same as those of the substrate tray 20A of the first embodiment, but the thickness is the substrate tray of the first embodiment. It is different from 20A.

  Specifically, in the edge portion 23a of the through hole 21, the thickness of the substrate tray 20B is substantially the same as or thinner than the thickness of the substrate W, but the periphery of the edge portion 23a In most portions 23b of the tray 20B, the thickness of the substrate tray 20B is made larger than the thickness of the substrate W, thereby ensuring the strength of the substrate tray 20B and preventing it from bending. By adopting such a structure, the strength of the substrate tray 20B can be ensured even if the substrate tray 20B has a large diameter or the substrate W has a small diameter. In addition, the yield when manufacturing the substrate tray 20B can be improved.

  In the substrate tray 20B, for example, a step shape may be formed between the thin edge portion 23a and the thick portion 23b. However, as shown in FIG. Is provided, the gas flowing around the substrate W becomes smoother.

  The present invention is suitable for a plasma processing apparatus such as a dry etching apparatus and a plasma CVD apparatus that require temperature control of the substrate, and in particular, a plasma process for manufacturing a LED element, a MEMS element, or the like by plasma processing a small-diameter substrate. Suitable for the device.

10A, 10B Electrostatic chucking plate 11 Accommodating hole 12 Pin hole 14, 17a, 17b Electrostatic chucking electrode 20A, 20B Substrate tray 21 Through hole 22 Protruding part 24 Inclined surface

Claims (8)

A substrate tray for placing and transporting a plurality of substrates, and an electrostatic chucking plate for placing the substrate trays together with the plurality of substrates,
The substrate tray protrudes downward from at least three locations of a plurality of through holes each containing the substrate inside and a lower surface of an edge portion of the through hole and on the center side of the through hole. And a protrusion to support the
The electrostatic attraction plate is formed on the surface corresponding to the protrusion, a plurality of receiving holes for receiving the protrusion, and at least three pins through which the pins for raising and lowering the substrate tray pass. A pin hole and an electrode for electrostatically adsorbing the substrate provided inside;
When the substrate tray is placed on the electrostatic attraction plate, the protrusion is accommodated in the accommodation hole, and the plurality of substrates and the substrate tray are placed directly on the surface of the electrostatic attraction plate. A substrate mounting structure characterized by the above. In the board | substrate mounting structure of Claim 1,
The substrate mounting structure, wherein the upper surface of the protrusion is lower than the lower surface of the substrate tray. In the board | substrate mounting structure of Claim 1 or Claim 2,
The substrate mounting structure, wherein the accommodation hole is a hole penetrating the electrostatic chucking plate. In the mounting structure of the board | substrate as described in any one of Claims 1-3,
The substrate mounting structure, wherein the pin hole is also used as a part of the accommodation hole. In the board | substrate mounting structure of Claim 4,
A substrate mounting structure, wherein a holding portion corresponding to a shape of a lower portion of the protruding portion is provided at an upper end of the pin. In the board | substrate mounting structure as described in any one of Claims 1-5,
A substrate mounting structure characterized in that the thickness of the substrate tray is made larger than the thickness of the substrate, and the thickness of the edge portion of the through hole is made equal to or less than the thickness of the substrate. In the board | substrate mounting structure of Claim 6,
A substrate mounting structure, wherein an inclined surface that is inclined toward the edge portion of the through hole is provided on an upper surface of the substrate tray around the through hole. A substrate mounting structure according to any one of claims 1 to 7,
A plasma processing apparatus, wherein temperature control of the plurality of substrates is performed via the electrostatic adsorption plate, and plasma processing is performed on the plurality of substrates.