JP2013014643A - Epoxy resin composition for sealing semiconductor and semiconductor device - Google Patents

Abstract

【選択図】なしThe present invention provides an epoxy resin composition for semiconductor encapsulation and a semiconductor device using the same.
Of the four stereoisomers of the compound represented by the following general formula (I), the content of stereoisomers having an exo-exo configuration is 80% or more of the total amount of the isomers. An epoxy resin composition for semiconductor encapsulation comprising a certain alicyclic diepoxy compound, a curing agent, a curing accelerator, and an inorganic filler, and a semiconductor device using the same.

[Selection figure] None

Description

  The present invention relates to an epoxy resin composition for semiconductor encapsulation capable of obtaining a cured product having a low viscosity, a high glass transition temperature, and a low linear expansion coefficient even when the filler is highly filled, and the semiconductor encapsulation The present invention relates to a semiconductor device sealed with an epoxy resin composition for use.

With the rapid progress of the advanced information society in recent years and the development of information and communication networks, the connection between electronic components such as semiconductor chips and printed circuit boards in order to achieve higher information processing speed and higher communication wavelength range Developments have been made to shorten the wiring distance as much as possible to increase the transmission speed and reduce the transmission loss in the high frequency range.
As a method of connecting an electrode such as a semiconductor chip and an electrode of a printed circuit board, a method of directly connecting via a gold wire or solder (bare chip mounting method) is widely used.

  Further, the electrodes connected by this method and the wiring between the electrodes are sealed with a sealing material for the purpose of improving connection reliability. As the sealing material, a liquid sealing material or a film made of a conventionally known epoxy resin is widely used. For example, in a flip chip bonding technique that is one of bare chip mounting methods, a semiconductor chip and a printed circuit board are directly connected to electrodes formed on the printed circuit board by solder bumps or the like formed on a semiconductor chip electrode part.

In this case, if the obtained semiconductor circuit is subjected to a heat cycle test, excessive mechanical stress is applied to the solder bumps due to the difference in coefficient of linear expansion between the printed circuit board and the semiconductor chip, causing cracks in the solder bumps. May occur, and the connection reliability of the semiconductor circuit may be impaired.
In order to solve this problem, an underfill (sealing material) using an epoxy resin is sometimes filled in the gap between the printed circuit board and the semiconductor chip.

  Examples of the epoxy resin include general-purpose aromatic epoxy resins such as glycidyl ether type epoxy resins. These epoxy resin cured products are generally known to have excellent performance in terms of mechanical properties, water resistance, corrosion resistance, adhesion, chemical resistance, heat resistance, and electrical properties. .

However, since the glycidyl ether type epoxy resin generally has low fluidity, a sealing material using this resin has a problem that it is likely to be inferior in permeability to a fine gap in a circuit and application workability. In particular, in a sealing material containing a filler, since the viscosity further increases, it has been very important to solve this problem.
As a method for increasing the fluidity of the epoxy resin, a method of diluting with a solvent such as toluene, xylene, methyl ethyl ketone, ethyl acetate or the like can be considered. However, in this case, there are problems in workability, environmental safety, and the like.

  On the other hand, an alicyclic epoxy resin having an alicyclic skeleton in the molecule is known as an epoxy resin having a low viscosity. For example, alicyclic epoxy resins such as 3,4-epoxycyclohexylmethyl-3 ', 4'-epoxycyclohexanecarboxylate and 1,2,8,9-diepoxy limonene are commercially available. Patent Document 1 discloses bicyclohexyl-3,3'-diepoxide.

  However, when curing these alicyclic epoxy resins, if a non-cationic curing accelerator is used, the reactivity is poor compared to glycidyl ether type epoxy resins, so the glass transition temperature is high and the linear expansion coefficient is low. There was a problem that it was difficult to obtain a low cured product.

JP 2004-204228 A

  The present invention has been made in view of the prior art described above, and is a semiconductor encapsulant capable of obtaining a cured product having a low viscosity, a high glass transition temperature, and a low linear expansion coefficient even when the filler is filled in a high amount. An object of the present invention is to provide an epoxy resin composition for stopping and a semiconductor device sealed using the epoxy resin composition for semiconductor encapsulation.

  As a result of diligent research to solve the above-mentioned problems, the present inventors have determined the configuration of two epoxy rings of an alicyclic diepoxy compound represented by the following general formula (I), which is detected by gas chromatography. Among the four stereoisomers based on the above, the content of stereoisomers having an exo-exo configuration is 80% or more of the total amount of the four stereoisomers, as a proportion of the peak area by gas chromatography An epoxy resin composition for semiconductor encapsulation comprising a certain high-purity alicyclic diepoxy compound, a curing agent, a curing accelerator, and an inorganic filler can be obtained with a low viscosity even when highly filled with a filler. Since the cured product has a high glass transition temperature and a small linear expansion coefficient, it has been found that it can be suitably used as a semiconductor sealing material. This has led to the formation.

Thus, according to the first aspect of the present invention, the following epoxy resin compositions for semiconductor encapsulation (1) to (7) are provided.
(1) Of four stereoisomers based on the configuration of two epoxy rings of an alicyclic diepoxy compound represented by the following general formula (I), detected by gas chromatography, exo-exo stereo High-purity alicyclic diepoxy compound, curing agent, curing accelerator, wherein the content of stereoisomers having a configuration is 80% or more of the total amount of the four stereoisomers as a proportion of the peak area by gas chromatography And an epoxy resin composition for encapsulating a semiconductor comprising an inorganic filler.

^(Wherein, R 1 ^{to R 12} independently of one another, represent a hydrogen atom, a halogen atom, or a hydrocarbon group having 1 to 20 carbon atoms.)
(2) The high purity alicyclic diepoxy compound is an exo-exo among four stereoisomers based on the configuration of two epoxy rings of the alicyclic diepoxy compound represented by the general formula (I). A high-purity alicyclic diepoxy compound in which the content of stereoisomers having the following configuration is 95% or more of the total amount of the four stereoisomers as a proportion of the peak area by gas chromatography (1) The epoxy resin composition for semiconductor encapsulation as described in 2.
(3) The epoxy resin composition for semiconductor encapsulation according to (1) or (2), wherein the high-purity alicyclic diepoxy compound is tetrahydroindene diepoxide.
(4) The epoxy resin composition for semiconductor encapsulation according to any one of (1) to (3), wherein the curing agent is an acid anhydride curing agent.
(5) The epoxy resin composition for semiconductor encapsulation according to any one of (1) to (4), wherein the curing accelerator is an imidazole curing accelerator.
(6) Any of (1) to (5), wherein the inorganic filler is spherical silica having an average particle size of 5 μm or less, and the content thereof is 40% by weight or more in the epoxy resin composition for semiconductor encapsulation. An epoxy resin composition for semiconductor encapsulation according to claim 1.
(7) Any of (1) to (6), wherein the inorganic filler is spherical silica having an average particle size of 1 μm or less, and the content thereof is 50% by weight or more in the epoxy resin composition for semiconductor encapsulation. An epoxy resin composition for semiconductor encapsulation according to claim 1.

According to a second aspect of the present invention, the following semiconductor device (8) is provided.
(8) A semiconductor device that is sealed using the epoxy resin composition for sealing a semiconductor according to any one of (1) to (7).

The epoxy resin composition for semiconductor encapsulation of the present invention has a low viscosity even when highly filled with a filler, and the resulting cured product has a high glass transition temperature and a low linear expansion coefficient. Suitable as a material. Moreover, the obtained hardened | cured material has high insulation reliability. The epoxy resin composition for semiconductor encapsulation of the present invention can be sealed with a small amount of voids because the resin sufficiently penetrates between fine bumps.
Moreover, since the semiconductor device of the present invention is encapsulated with the epoxy resin composition for encapsulating a semiconductor of the present invention, the difference in linear expansion coefficient from the semiconductor chip is relatively small, and excellent connection reliability in a heat cycle test. Indicates.

It is sectional drawing of the semiconductor device of this invention. It is sectional drawing of the semiconductor device of this invention. It is a schematic diagram of the apparatus used for evaluation of capillary flow property in an Example and a comparative example. (A) is a perspective view of an apparatus, (B) is XY sectional drawing of an apparatus.

  Hereinafter, the present invention will be described in detail by dividing into 1) an epoxy resin composition for semiconductor encapsulation, and 2) a semiconductor device.

1) Epoxy resin composition for semiconductor encapsulation The epoxy resin composition for semiconductor encapsulation of the present invention is characterized by containing the following components (a) to (d).
(A) Of the four stereoisomers based on the configuration of two epoxy rings of the alicyclic diepoxy compound represented by the general formula (I), detected by gas chromatography, the exo-exo stereo A high-purity alicyclic diepoxy compound (hereinafter referred to as “high-purity fat”) in which the content of stereoisomers having a configuration is 80% or more of the total amount of the four stereoisomers as a ratio of the peak area by gas chromatography. Cyclic diepoxy compound (a) ")
(B) Curing agent (c) Curing accelerator (d) Inorganic filler

(A) High-purity alicyclic diepoxy compound The high-purity alicyclic diepoxy compound (a) used in the present invention is an alicyclic diepoxy compound represented by the general formula (I) (detected by gas chromatography) ( Hereinafter, four stereoisomers based on the configuration of two epoxy rings possessed by “diepoxy compound A”) (that is, a stereoisomer having an exo-exo configuration, an exo-endo configuration) Stereoisomers having an exo-exo configuration), stereoisomers having an endo-exo configuration, and stereoisomers having an end-end configuration, Content (hereinafter sometimes referred to as “exo-exo stereoisomer”) is the ratio of the peak area by gas chromatography, 80% or more of the total amount of the two stereoisomers.

  Contains a high purity alicyclic diepoxy compound in which the content of exo-exo stereoisomer is 80% or more, preferably 95% or more of the total amount of the four stereoisomers, as a proportion of the peak area by gas chromatography By using the epoxy resin composition, a cured product having a high glass transition temperature and a small linear expansion coefficient can be obtained efficiently. Moreover, the said hardened | cured material has the characteristic that it is excellent in light transmittance and yellowing resistance. The exo-exo stereoisomer is considered to have a higher reactivity of the epoxy group than the other three isomers due to its steric structure, but this property is presumed to contribute. In the high-purity alicyclic diepoxy compound of the present invention, the ratio of the three stereoisomers other than the exo-exo stereoisomer is not particularly limited.

In said formula (I), R < ¹ > -R < ¹² > represents a hydrogen atom, a halogen atom, or a C1-C20 hydrocarbon group mutually independently.
Examples of the halogen atom for R ^{1 to} R ¹² include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
Examples of the hydrocarbon group having 1 to 20 carbon atoms include an alkyl group having 1 to 20 carbon atoms such as a methyl group, an ethyl group, and a propyl group; an alkenyl group having 2 to 20 carbon atoms such as a vinyl group and an allyl group; And an alkylidene group having 2 to 20 carbon atoms such as a propylidene group.

Among these, as R < ¹ > -R < ¹² >, since it can obtain the hardened | cured material which is excellent in balance with light transmittance and yellowing resistance, it is a hydrogen atom or a C1-C20 alkyl group mutually independently. It is preferable that it is a hydrogen atom or a methyl group, and it is particularly preferable that all of R ^{1 to} R ¹² are hydrogen atoms. In the general formula (I), when all of R ^{1 to} R ¹² are hydrogen atoms, the alicyclic diepoxy compound represented by the general formula (I) is a tetrahydroindene diepoxide.

  The quantitative analysis by gas chromatography of the four stereoisomers of the diepoxy compound A can be performed, for example, under the following measurement conditions.

Measuring device: HP6890 (manufactured by Hewlett-Packard Company)
Column: HP-1 (manufactured by Hewlett-Packard Company), length 30 m, inner diameter 0.25 mm, film thickness 1.0 μm
Liquid phase 100% -dimethylpolysiloxane carrier gas: helium carrier gas flow rate: 1.0 mL / min detector: FID
Inlet temperature: 250 ° C
Detector temperature: 250 ° C
Temperature rise pattern (column): held at 40 ° C. for 3 minutes, temperature rise to 300 ° C. at 10 ° C./min Split ratio: 200
Sample: 0.4 μL

The structures of the four stereoisomers of diepoxy compound A detected by gas chromatography can be assigned by ¹ H-NMR or ¹³ C-NMR.

  The diepoxy compound A can be produced by a conventionally known method. For example, as shown below, a method of oxidizing (epoxidizing) a corresponding cyclic olefin compound (compound represented by the following formula (II)) with an oxidizing agent can be mentioned.

(Wherein R ^{1 to} R ¹² represent the same meaning as described above.)
Examples of the oxidizing agent include hydrogen peroxide, aliphatic percarboxylic acid, and organic peroxide.
The usage-amount of an oxidizing agent is equimolar or more with respect to a cyclic olefin compound, Preferably, it is 1-2 times mole.

  The epoxidation reaction is preferably performed in a solvent. Examples of the solvent to be used include aliphatic hydrocarbons such as hexane and cyclohexane; aromatic hydrocarbons such as toluene; esters such as ethyl acetate and methyl acetate;

The reaction temperature is 0 ° C. or higher and the boiling point of the solvent used, preferably 20 to 70 ° C.
The reaction time is usually 1 to 100 hours, preferably 2 to 50 hours, depending on the reaction scale and the like.
After completion of the reaction, for example, a method of precipitating with a poor solvent, a method of pouring the epoxidized product into hot water with stirring and distilling off the solvent, or a direct desolvation method etc. A resin can be obtained.

  The compound represented by the formula (I) obtained by the above reaction usually has four stereoisomers of endo-endo stereoisomer, endo-exo stereoisomer, exo-endo stereoisomer and exo-exo stereoisomer. It is a mixture of bodies.

  Among the four stereoisomers, the content of the exo-exo stereoisomer is 80% or more of the total amount of the four stereoisomers in terms of the ratio of the peak area by gas chromatography. The compound can be obtained by separating and purifying a mixture of four stereoisomers of the compound represented by the formula (I) by a known purification method such as distillation or column chromatography. Especially, it is preferable to isolate | separate and refine | purify the said mixture according to the method as described in the <purification example of diepoxy compound A> mentioned later.

(B) Curing Agent The epoxy resin composition for semiconductor encapsulation of the present invention contains a curing agent (b) in addition to the high-purity alicyclic diepoxy compound (a).
The curing agent (b) is not particularly limited as long as it is a curing agent for an epoxy resin that can cure the high-purity alicyclic diepoxy compound (a) by heat or light.
For example, an acid anhydride type curing agent, a phenol type curing agent, etc. are mentioned, and since a high purity alicyclic diepoxy compound (a) can be more suitably cured, an acid anhydride type curing agent is preferred.

  The acid anhydride-based curing agent has 1 or 2 aliphatic rings or aromatic rings and 1 or 2 acid anhydride groups in the molecule, preferably 4 to 25 carbon atoms, preferably About 8 to 20 acid anhydrides are preferred.

  The acid anhydride curing agent can be arbitrarily selected from those generally used as curing agents for epoxy resins, and is preferably liquid at room temperature. Specific examples include methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, dodecenyl succinic anhydride, methylendomethylenetetrahydrophthalic anhydride, and the like.

Further, in the range that does not adversely affect the impregnation property of the epoxy resin composition for semiconductor encapsulation of the present invention, an acid anhydride curing agent that is solid at room temperature, for example, phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride Methylcyclohexene dicarboxylic acid anhydride and the like can be used. When using an acid anhydride curing agent that is solid at room temperature, it is preferably dissolved in a liquid acid anhydride curing agent at room temperature and used as a liquid mixture at room temperature.
The above curing agents can be used alone or in combination of two or more.

  Of these, methylhexahydrophthalic anhydride and a mixture of methylhexahydrophthalic anhydride and hexahydrophthalic anhydride are preferred because the intended effect of the present invention is more easily obtained.

  Examples of commercially available acid anhydride curing agents include, for example, trade names “MH-700”, “HNA-100” [manufactured by Shin Nippon Rika Co., Ltd.], “HN-5500E”, “HN-7000” [ As mentioned above, Hitachi Chemical Co., Ltd.], glutaric anhydride (Japan Epoxy Resin Co., Ltd.) and the like can be mentioned.

  The use ratio of the curing agent is not particularly limited as long as it is an effective amount capable of exhibiting the effect as a curing agent, but is usually 0.5 to 1.5 equivalents as an acid anhydride equivalent with respect to 1 equivalent of epoxy equivalent. It is a range, More preferably, it is the range of 0.8-1.2 equivalent.

(C) Curing accelerator The epoxy resin composition for semiconductor encapsulation of the present invention further contains a curing accelerator (c) in addition to the high-purity alicyclic diepoxy compound (a) and the curing agent (b). . The curing accelerator (c) is a compound having a function of accelerating the curing reaction when the high-purity alicyclic diepoxy compound (a) is cured by the curing agent (b).

Specific examples of the curing accelerator (c) include tertiary amines such as benzyldimethylamine, tris (dimethylaminomethyl) phenol, dimethylcyclohexylamine; 1-cyanoethyl-2-ethyl-4-methylimidazole, 2-ethyl Imidazole curing accelerators such as -4-methylimidazole and 1-benzyl-2-methylimidazole; organophosphorus curing accelerators such as triphenylphosphine and triphenyl phosphite; tetrabutylphosphonium diethyl phosphorodithioate, tetra Quaternary phosphonium salts such as phenylphosphonium bromide, methyltributylphosphonium dimethyl phosphate, tetra-n-butylphosphonium bromide; diazabicycloa such as 1,8-diazabicyclo [5.4.0] undecene-7 and its organic acid salts Kens; organometallic compounds such as zinc octylate, tin octylate and aluminum acetylacetone complex; quaternary ammonium salts such as tetraethylammonium bromide and tetrabutylammonium bromide; boron compounds such as boron trifluoride and triphenylborate; And metal halides such as zinc and stannic chloride.
In addition, high melting point imidazole compounds, dicyandiamide, high melting point dispersion type latent accelerators such as amine addition type accelerators in which amine is added to epoxy resin, etc .; the surface of imidazole type, phosphorus type and phosphine type accelerators are coated with polymer Microcapsule type latent accelerator; amine salt type latent curing accelerator; high temperature dissociation type thermal cationic polymerization type latent curing accelerator such as Lewis acid salt and Bronsted acid salt; active energy such as ultraviolet rays and radiation A latent curing accelerator typified by a photodissociation type photocationic polymerization type latent curing accelerator or the like that generates protons by rays can also be used.

  Among these, an imidazole-based curing accelerator is preferable because the intended effect of the present invention is more easily obtained, and 2-ethyl-4-methylimidazole and 1-cyanoethyl-2-ethyl-4-methylimidazole are particularly preferable. .

  The above hardening accelerators (c) can be used alone or in combination of two or more. Although there is no restriction | limiting in particular if the usage-amount of a hardening accelerator (c) will be a quantity which can acquire a hardening acceleration effect, It is 0.1-10 weight part normally with respect to 100 weight part of high purity alicyclic diepoxy compounds, Preferably it is 0.5-5 weight part.

(D) Inorganic filler The epoxy resin composition for semiconductor encapsulation of the present invention further includes a filler in addition to the high-purity alicyclic diepoxy compound (a), the curing agent (b) and the curing accelerator (c). Contains inorganic filler (d).

  Examples of the inorganic filler (d) include fused spherical silica, fused crushed silica, crystalline silica, sol-gel silica, fumed silica and the like, silica balloon, alumina, iron oxide, zinc oxide, magnesium oxide, tin oxide, and beryllium oxide. Inorganic oxides such as calcium carbonate, magnesium carbonate and sodium bicarbonate; inorganic sulfates such as calcium sulfate; talc, clay, mica, kaolin, fly ash, montmorillonite, And inorganic silicates such as calcium silicate, glass, and glass balloon. Among them, spherical silica is preferable and fused spherical silica is particularly preferable because it is possible to design a particle size distribution suitable for close-packing.

The fused spherical silica is a spherical amorphous silica, and can be designed to have a particle size distribution suitable for close packing, and thus can be highly filled.
The fused spherical silica is roughly classified into natural fused spherical silica and synthetic fused spherical silica depending on the production method, and any of them can be used in the present invention.

  Natural fused silica is used as a raw material for natural fused spherical silica. Micron-sized quartzite washed and crushed is supplied into an LPG / oxygen flame, heated and softened to become spherical due to surface tension, and rapidly cooled to form amorphous spherical silica upon exiting the flame. Various average particle sizes are produced depending on the particle size and melting conditions of the raw crushed silica stone.

  Synthetic fused spherical silica uses high-purity silicon tetrachloride synthesized from metallic silicon and hydrogen chloride as a raw material. Silicon tetrachloride is fed into the hydrogen / oxygen flame, and silica is produced in the flame by high temperature hydrolysis of silicon tetrachloride. Next, the silica melts in the flame, becomes spherical due to surface tension, and is rapidly cooled when it exits the flame to become amorphous spherical silica. Various average particle diameters are produced depending on the melting conditions.

The average particle diameter of the spherical silica used is not particularly limited, but it is difficult to agglomerate and settle, so the average value of the length in the longitudinal direction and the short direction when the particles are viewed three-dimensionally, It is preferably 5 μm or less, and more preferably 1 μm or less. More specifically, the thickness is preferably 0.1 to 5 μm, and more preferably 0.5 to 1 μm.
The particle size (maximum particle size) of the coarse particles contained in the spherical silica to be used is usually 50 μm or less, preferably 25 μm or less, more preferably 10 μm or less. By using silica in this range, it is possible to efficiently provide a liquid sealing material that can easily penetrate between fine bumps.

  The use ratio of the inorganic filler is preferably 40% by weight or more, more preferably 50% by weight or more in the epoxy resin composition for semiconductor encapsulation. More specifically, the content is preferably 40 to 80% by weight, and more preferably 50 to 70% by weight.

  Among these, the inorganic filler is spherical silica having an average particle diameter of 5 μm or less from the viewpoint of sufficiently improving the connection reliability of the resulting semiconductor device while considering the permeability between the fine bumps and the workability. Is usually 0.1 μm), and the content thereof is preferably 40% by weight or more in the epoxy resin composition for semiconductor encapsulation (the upper limit is usually 80% by weight), and the spherical silica having an average particle size of 1 μm or less (The lower limit is usually 0.5 μm), and the content thereof is particularly preferably 50% by weight or more in the epoxy resin composition for semiconductor encapsulation (the upper limit is usually 70% by weight).

In the epoxy resin composition for semiconductor encapsulation of the present invention, an epoxy silane, a mercapto silane, an amino silane, an alkyl silane, an ureido silane, a vinyl silane is optionally added in order to enhance the adhesion between the resin component and the inorganic filler (d). A silane coupling agent (e) such as can be further added.
Specific examples of the silane coupling agent (e) include vinyltrichlorosilane, vinyltriethoxysilane, vinyltris (β-methoxyethoxy) silane, γ-methacryloxypropyltrimethoxysilane, β- (3,4-epoxycyclohexyl). Ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, vinyltriacetoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-anilino Propyltrimethoxysilane, γ-anilinopropylmethyldimethoxysilane, γ- [bis (β-hydroxyethyl)] aminopropyltriethoxysilane, N-β- (aminoethyl) -γ-aminopropyltrimethoxysilane, γ- (Β-A Noethyl) aminopropyldimethoxymethylsilane, N- (trimethoxysilylpropyl) ethylenediamine, N- (dimethoxymethylsilylisopropyl) ethylenediamine, methyltrimethoxysilane, dimethyldimethoxysilane, methyltriethoxysilane, N-β- (N-vinyl) And silane coupling agents such as (benzylaminoethyl) -γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, hexamethyldisilane, vinyltrimethoxysilane, and γ-mercaptopropylmethyldimethoxysilane. These may be used alone or in combination of two or more.
The amount of the silane coupling agent (e) is preferably 0.05 to 5 parts by weight and more preferably 0.1 to 2.5 parts by weight with respect to 100 parts by weight of the inorganic filler.

In the epoxy resin composition for semiconductor encapsulation of the present invention, a high-purity alicyclic diepoxy compound (a), a curing agent (b), a curing accelerator (c), an inorganic filler (d), and, if desired, In addition to the silane coupling agent (e), other components may be included as long as the object of the present invention is not impaired.
Examples of other components include reaction modifiers, other epoxy compounds, and other additives.

  Examples of the reaction modifier include a compound having a hydroxyl group. By adding a compound having a hydroxyl group, the curing reaction of the epoxy resin composition for semiconductor encapsulation can be gradually advanced. Specific examples of the compound having a hydroxyl group include ethylene glycol, diethylene glycol, glycerin and the like. The additive for the reaction modifier is usually 0.1 to 10 parts by weight, preferably 0.5 to 5 parts by weight, based on 100 parts by weight of the high purity alicyclic diepoxy compound.

Specific examples of other epoxy compounds include alicyclic epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, and bisphenol S type epoxy resins excluding the alicyclic diepoxy compounds represented by the general formula (1). Bifunctional epoxy resins such as bisphenol AD type epoxy resin, naphthalene type epoxy resin, and biphenyl type epoxy resin can be mentioned, and those having a low chlorine content are particularly preferable.
Specific examples of the alicyclic epoxy resin include 3,4-epoxycyclohexylmethyl (3,4-epoxy) cyclohexanecarboxylate, bis (3,4-epoxycyclohexyl) adipate, limonene diepoxide, and 1-epoxy-3. , 4-epoxycyclohexane, dicyclopentadiene diepoxide, epoxidized 3-cyclohexene-1,2-dicarboxylic acid bis-3-cyclohexenyl methyl ester and its ε-caprolactone adduct, and epoxidized butanetetracarboxylic acid tetrakis-3 -Cyclohexenyl methyl ester and its epsilon-caprolactone adduct etc. are mentioned.
In addition to the above, novolak type epoxy resins such as phenol novolak type epoxy resin, brominated phenol novolak type epoxy resin, orthocresol novolak type epoxy resin; bisphenol A novolak type epoxy resin, bisphenol AD novolak type epoxy resin, trisphenol methane type epoxy Resin, dicyclopentadiene type epoxy resin obtained by epoxidizing a polymer of dicyclopentadiene and phenol, phenol / biphenylene type epoxy resin obtained by epoxidizing a condensate of biphenol and phenol, and a condensate of naphthol and phenols. Modified novolak type epoxy resins such as naphthalene type epoxy resins; glycidyl ester type epoxy resins such as dimer acid glycidyl ester and triglycidyl ester; Glycidylamine-type epoxy resins such as traglycidylaminodiphenylmethane, triglycidyl p-aminophenol, triglycidyl-p-aminophenol, tetraglycidylmetaxylylenediamine, tetraglycidylbisaminomethylcyclohexane, and heterocyclic such as triglycidyl isocyanurate Epoxy resin; phloroglicinol triglycidyl ether, trihydroxybiphenyl triglycidyl ether, trihydroxyphenylmethane triglycidyl ether, glycerin triglycidyl ether, 2- [4- (2,3-epoxypropoxy) phenyl] -2- [4 -[1,1-bis [4- (2,3-epoxypropoxy) phenyl] ethyl] phenyl] propane, 1,3-bis [4- [1- [4- (2,3-epoxy] Trifunctional epoxy resins such as (ropoxy) phenyl] -1- [4- [1- [4- (2,3-epoxypropoxy) phenyl] -1-methylethyl] phenyl] ethyl] phenoxy] -2-propanol; And tetrafunctional phenyl epoxy resins such as tetrahydroxyphenyl ethane tetraglycidyl ether, tetraglycidyl benzophenone, bisresorcinol tetraglycidyl ether, and tetraglycidoxybiphenyl.

These other epoxy compounds can be used alone or in combination of two or more. Among these, it is preferable to use a bisphenol A-type epoxy resin, a bisphenol F-type epoxy resin, and an alicyclic epoxy resin that are liquid at 25 ° C., because the effects intended by the present invention are more easily obtained.
Moreover, the compounding quantity of the other epoxy compound in the epoxy resin composition for semiconductor sealing of this invention is 50 weight% or less normally in the whole quantity of the epoxy compound to be used. When the compounding amount of the other epoxy compound exceeds 50% by weight in the total amount of the epoxy compound to be used, it becomes difficult to obtain the intended effect of the present invention.

Examples of other additives include silicone-based and fluorine-based antifoaming agents, fillers other than the inorganic filler (d), flame retardants, colorants, antioxidants (phenolic, phosphorus-based, sulfur-based oxidation). Prevention agents, etc.), UV absorbers, phosphors, ion adsorbers, dyes, pigments, stress reducing agents, flexibility imparting agents, mold release agents, waxes, halogen trapping agents, leveling agents, wetting improvers, etc. Can be mentioned.
The compounding amounts of these other additives are usually 5% or less on a weight basis in the epoxy resin composition for semiconductor encapsulation, respectively.

The epoxy resin composition for semiconductor encapsulation of the present invention comprises a high-purity alicyclic diepoxy compound (a), a curing agent (b), a curing accelerator (c), an inorganic filler (d), and, optionally, a silane cup. The ring agent (e) and other components can be prepared by stirring and mixing according to a known method.
Although the temperature at the time of stirring and mixing changes also with the kind etc. of the hardening | curing agent and hardening accelerator to mix | blend, it is preferable to set normally to about 10-60 degreeC. If the set temperature at the time of preparation is less than 10 ° C., the viscosity may be too high and uniform stirring and mixing operations may be difficult. Conversely, if the temperature at the time of preparation is too high, a curing reaction occurs and the epoxy resin composition Since the viscosity of a thing may become high, it is not preferable.
In order to stir and mix, for example, a three-roll, kneader, universal stirrer, ball mill, planetary mixer, homogenizer, homodisperser, etc. may be used. Stirring and mixing are performed using the high purity alicyclic diepoxy compound and each of the above. This may be done until the components are uniform.

  The epoxy resin composition for semiconductor encapsulation of the present invention has a low viscosity even when highly filled with a filler, and has a glass transition temperature (Tg) even when cured at a lower temperature and in a shorter time than conventional products. Gives a cured product having a high linear expansion coefficient. Therefore, it is suitable as a semiconductor sealing material with good workability.

Since the epoxy resin composition for semiconductor encapsulation of the present invention has an appropriate viscosity and the cured product has a small linear expansion coefficient, it has good workability and is suitable for semiconductor encapsulation applications.
The moderate viscosity is usually 1 to 20 Pa · s, preferably 3 to 15 Pa · s at 25 ° C. A viscosity can be measured by the method as described in the below-mentioned Example.

The epoxy resin composition for semiconductor encapsulation of the present invention is easily cured and can efficiently seal the semiconductor.
Although it does not specifically limit as a hardening method, For example, the method of leaving still for about 0.5 to 4 hours in the heating furnace set to about 80-200 degreeC is mentioned.
The curing method can be a multi-step step cure. For example, when curing the epoxy resin composition for semiconductor encapsulation of the present invention, the primary curing is performed at 80 to 120 ° C. for about 0.5 to 2 hours. After performing, it is preferable to perform secondary curing at 120 to 200 ° C. for about 0.5 to 2 hours for curing.

  180 degreeC or more (for example, 180-250 degreeC) is preferable, and, as for the glass transition temperature (Tg) of the hardened | cured material of the epoxy resin composition of this invention, 190 degreeC or more (for example, 190-250 degreeC) is more preferable.

  As will be described later, the epoxy resin composition for semiconductor encapsulation of the present invention is particularly suitable for sealing a portion such as a solder bump connecting a chip electrode and a printed circuit board electrode in a flip chip mounting package or the like. Used for. When the epoxy resin composition for semiconductor encapsulation of the present invention is used as an underfill agent, it easily penetrates into gaps such as solder bumps, can be filled without voids remaining, and has a low linear expansion coefficient. Therefore, when the semiconductor device sealed with the epoxy resin composition for semiconductor encapsulation of the present invention is subjected to, for example, a heat cycle test, the device can exhibit excellent connection reliability.

2) Semiconductor device The semiconductor device of the present invention is characterized by being sealed using the epoxy resin composition for semiconductor encapsulation of the present invention.
The semiconductor device of the present invention is not particularly limited as long as the space between an electronic component such as a semiconductor chip and a printed circuit board (interposer) is sealed using the epoxy resin composition for semiconductor sealing of the present invention. There is no.

  The printed board is not particularly limited as long as it has at least an insulating layer, a conductor circuit, and an electrode, and can transmit an electric signal from the electrode of the electronic component to another electronic component. Examples of printed boards include conventional glass epoxy printed wiring boards, glass polyimide printed wiring boards, bismaleimide triazine resin printed boards, polyphenylene ether (polyphenylene oxide) printed wiring boards, fluororesin printed wiring boards, and other cyclic olefin resin printed boards. Printed circuit board such as printed circuit board with low dielectric constant such as printed circuit board; Flexible printed circuit board (FPC) such as polyethylene terephthalate flexible printed circuit board and polyimide flexible printed circuit board; Silicon wafer substrate; Ceramic substrate; High-density mounting substrate used; Film-laminated high-density mounting substrate such as resin-coated metal foil, dry film, and adhesive insulating film; polyphenylene sulfide and liquid crystal poly Film wiring board such as thermoplastic engineering plastic film, etc., carrier film (polyimide carrier film etc.) used for chip scale package (CSP) which is a recent package form, single layer board, etc. Examples thereof include a printed circuit board on which electronic components are mounted on a substrate.

  Examples of the electronic component include a semiconductor chip such as an IC chip and an LSI chip, and a semiconductor package such as a multi-chip module (MCM) formed by mounting a plurality of semiconductor components. The electronic component has connection wires or protruding electrodes (bumps) for directly connecting to the electrodes of the printed circuit board. Examples of protruding electrodes include solder bumps and gold bumps.

The method for mounting the electronic component on the printed circuit board is not particularly limited, but wire bonding mounting (refer to FIG. 1) for connecting the electrode on the substrate side and the electrode on the electronic component side with a wire, and the electrode of the electronic component on the substrate side Flip chip mounting (see FIG. 2) that directly connects to the electrode of FIG. 2 and TAB (Tape Automated Bonding) mounting that connects the electrode on the substrate side and the electrode on the electronic component side using a film provided with a lead wire.
Especially, it is preferable to mount by flip chip mounting. In flip chip mounting, the electronic component is mounted and directly connected on the electrode of the printed circuit board in a face-down state with the protruding electrode formation surface upside down.

In the semiconductor device of the present invention, the gap between the printed circuit board and the electronic component is filled with the epoxy resin composition for semiconductor encapsulation, and is heated and cured, whereby the interelectrode connecting portion is made of the material. Seal.
The method of sealing the semiconductor device is not particularly limited, but the capillary phenomenon is applied by applying the epoxy resin composition for semiconductor sealing of the present invention to the vicinity of the gap between the printed circuit board and the electronic component using a dispenser or the like. The epoxy resin composition for encapsulating a semiconductor of the present invention is applied to a printed circuit board, an electronic component, and the like by a method of filling the composition into a gap using a capillary (capillary flow underfill method) or a transfer molding machine. A method of filling the gaps and the electronic parts and sealing them together (mold underfill method) is preferable.

  When the wire bonding mounting is performed (see FIG. 1), the interelectrode connecting portion may be covered with the material by applying the semiconductor sealing epoxy resin composition so as to cover at least the wire connecting portion. it can. At that time, a frame (dam) may be installed around the electronic component so that the applied material does not flow, or only the mounting portion of the electronic component may be a concave portion.

The heating is performed, for example, by leaving the printed circuit board in a state where the interelectrode connecting portion with the electronic component is filled with the semiconductor sealing epoxy resin composition in a heating furnace.
The heating temperature for curing the epoxy resin composition for semiconductor encapsulation is about 80 to 200 ° C., and the heating time is usually about 0.5 to 4 hours. It is also possible to cure by multi-step step cure.

  Examples of the obtained semiconductor device are shown in FIGS. FIG. 1 is a diagram showing a semiconductor device in which a semiconductor chip is mounted by wire bonding, and FIG. 2 is a diagram showing a semiconductor device in which a semiconductor chip is flip-chip mounted. In the figure, 1 and 1 'are printed circuit boards, 2 is connection wires, 3 and 3' are semiconductor chips, 4 and 4 'are cured products of the epoxy resin composition for semiconductor encapsulation of the present invention, and 5 is Solder bumps (solder balls) are shown.

  When solder bumps are provided on the surface opposite to the side where the electronic component is attached to the printed circuit board, after sealing the interelectrode connection portion between the printed circuit board and the electronic component as described above (primary sealing) The obtained printed circuit board may be further mounted and connected on a mother board (ordinary printed wiring board). In this case, secondary sealing is performed by pouring the epoxy resin composition for semiconductor sealing of the present invention into the gap between the printed circuit board and the motherboard by using an underfill method using a dispenser or the like and curing. Can do.

The semiconductor device of the present invention may be a semiconductor bare chip mounting package. Examples of the electronic components used include large-scale integrated circuits (LSIs) in which fine wirings are highly integrated, such as those used in CPUs (central processing units) and memories (DRAMs) among semiconductor components. The semiconductor bare chip mounting package is obtained by sealing at least the connection portion between the electrode of the semiconductor chip and the electrode of the printed board using the epoxy resin composition for semiconductor sealing of the present invention.
A ball grid array (BGA) in which protruding electrodes such as solder balls are attached to the package for further connection to a printed circuit board of a motherboard, and a multichip package (multichip module) in which a plurality of semiconductor chips are mounted include a computer, It can be used for communication equipment.

  Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples. However, the present invention is not limited to the examples. Parts and% in each example are based on weight unless otherwise specified.

The measurement conditions for gas chromatography in the synthesis examples are as described below.
Measuring device: HP6890 (manufactured by Hewlett-Packard Company)
Column: HP-1 (manufactured by Hewlett-Packard Company), length 30 m, inner diameter 0.25 mm, film thickness 1.0 μm
Liquid phase 100% -dimethylpolysiloxane carrier gas: helium carrier gas flow rate: 1.0 mL / min detector: FID
Inlet temperature: 250 ° C
Detector temperature: 250 ° C
Temperature rise pattern (column): held at 40 ° C. for 3 minutes, temperature rise to 300 ° C. at 10 ° C./min Split ratio: 200
Sample: 0.4 μL

[Synthesis Example 1] Synthesis of diepoxy compound A (crude product) In a three-necked reactor equipped with a thermometer, 40.0 g (0.333 mol) of 3a, 4,7,7a-tetrahydroindene was added in a nitrogen stream. Dissolved in 400 mL of acetone, 201.3 g (2.396 mol) of sodium bicarbonate and 400 mL of distilled water were added. The mixture was cooled to 10 ° C. in a water bath, and 327.4 g (0.532 mol) of Oxone (registered trademark) -persulfate compound was added so that the internal temperature of the reaction solution was between 20 and 30 ° C. The mixture was stirred for 2 hours while adjusting the water bath temperature. Thereafter, the reaction solution was cooled to 0 ° C., 300 mL of a 10% aqueous sodium hydroxide solution, 300 mL of distilled water and 300 mL of saturated brine were added, and the mixture was extracted twice with 500 mL of hexane. The organic layer was dried over sodium sulfate, concentrated with a rotary evaporator, and then vacuum dried to obtain 41.5 g of diepoxy compound A (crude product) (yield 82%).

  The obtained diepoxy compound A (crude product) was analyzed by gas chromatography. As a result, it was found that the diepoxy compound A has four stereoisomers based on the configuration of the two epoxy rings (ie, exo-exo configuration). Ratio of stereoisomers, stereoisomers having an exo-endo configuration, stereoisomers having an endo-exo configuration, and stereoisomers having an endo-endo configuration) Was exo-exo isomer: exo-endo isomer: endo-exo isomer: endo-endo isomer = 53.5: 22.9: 21.6: 2.0 (content of exo-exo stereoisomer) : 53.5%).

[Synthesis Example 2] Purification of diepoxy compound A 41.5 g of diepoxy compound A (crude product) obtained by the above method was analyzed by thin layer chromatography (developing solvent; hexane: ethyl acetate = 2: 1). Two spots were confirmed at R _f value = 0.54 and R _f value = 0.44. Therefore, 41.5 g of the crude product was used with 1200 g of silica gel (spherical, neutral, particle size; 63-210 μm, manufactured by Kanto Chemical Co., Inc.) and an eluent (hexane: ethyl acetate = 1: 4 (volume ratio)). Purified by silica gel column chromatography. Then, 17.0 _{g of} diepoxy compound A (purified product) was obtained in a yield of 41% by isolating the compound having an R _f value = 0.44 in the analysis by thin layer chromatography.

As a result of analyzing the obtained diepoxy compound A (purified product) by gas chromatography, the content of stereoisomers having an exo-exo configuration was 99.2%.
From the above, a high-purity alicyclic diepoxy compound having an exo-exo stereoisomer content of 99.2% among the four stereoisomers of diepoxy compound A was obtained. The structure of the stereoisomer was identified by NMR (Table 1).

[Example 1]
A mixture of 100 parts of the high-purity alicyclic diepoxy compound obtained in Synthesis Example 2 and methylhexahydrophthalic anhydride and hexahydrophthalic anhydride as a curing agent [Rikacid (registered trademark) MH-700G manufactured by Shin Nippon Rika Co., Ltd.] 170 parts, 1 part of 2-ethyl-4-methylimidazole [Cureazole (registered trademark) 2E4MZ Shikoku Kasei Kogyo Co., Ltd.] as a curing accelerator, and fused spherical silica [trade name PLV-3 manufactured by Tatsumori Co., Ltd.] as an inorganic filler Average particle size 3.0 μm, maximum particle size 10 μm] 406.5 parts, and γ-glycidoxypropyltrimethoxysilane (trade name KBM-403, manufactured by Shin-Etsu Silicone) as a silane coupling agent, reaction adjustment Add 1 part of ethylene glycol as an agent and stir for 10 minutes with a planetary mixer to prepare an epoxy resin composition for semiconductor encapsulation. It was. The equivalent ratio of acid anhydride to epoxy resin in the curing agent was 0.9 as acid anhydride equivalent / epoxy equivalent, and the silica content was 60%.
The obtained epoxy resin composition for semiconductor encapsulation is injected between a pair of glass substrates previously coated with a release film (the interval is adjusted with a 3 mm spacer), and the primary curing is performed at 100 ° C. A cured product having a thickness of 3 mm was obtained by performing secondary curing in an oven at 150 ° C. for 2 hours in an oven for 1 hour.
About the epoxy resin composition for semiconductor encapsulation and the cured product obtained as described above, the properties required for the semiconductor encapsulant and the encapsulated product are in accordance with the following evaluation methods, and the former has viscosity and capillary flow. For the latter, the glass transition temperature (Tg) and the linear expansion coefficient were evaluated. The results are shown in Table 2.

The evaluation method in Example 1 is as described below.
<Viscosity>
The viscosity at 25 ° C. of the epoxy resin composition for semiconductor encapsulation obtained in Example 1 was measured using a CAP-03 cone spindle with a Brookfield High Shearite viscometer CAP2000 +.

<Capillary flow>
A photoresist having a thickness of 20 μm was laminated on the slide glass, and a groove having a width of 6 mm was formed horizontally in the long-side direction of the slide glass by a photolithography method. A 10 mm square cover glass was placed on the slide glass with a pattern thus produced so that the center of the groove and the center of the cover glass overlapped. An epoxy resin composition for semiconductor encapsulation is dropped manually into a gap (width 6 mm, height 20 μm) formed at the end of the groove and the cover glass using a syringe, and the epoxy resin for semiconductor encapsulation is formed by capillary action. The time until the composition exudes from the gap on the opposite side of the cover glass and the groove was measured. In this measurement, the slide glass was heated to 60 ° C. FIG. 3 shows a schematic diagram of an apparatus used for the evaluation of capillary flow properties. (A) is a perspective view of the apparatus, 10 is a cover glass, 11 is a resist, 12 is a slide glass, S is a dropping portion of an epoxy resin composition for semiconductor sealing, (B) is an XY cross section of (A). In the figure, a = 20 μm and b = 6 mm.

<Glass transition temperature (Tg) / linear expansion coefficient>
The cured product obtained in Example 1 was cut into 5 mm square with a laboratory cutter MC-120 manufactured by Marto, and TMA measurement was performed by an expansion / compression method using EXSTER TMA / SS7100 manufactured by SII Nano Technology. It was. From the obtained data, the glass transition temperature (Tg) and the average linear expansion coefficient (α1, α2) around Tg were calculated.

[Example 2]
50 parts of the high-purity alicyclic diepoxy compound obtained in Synthesis Example 2 and 3,4-epoxycyclohexylmethyl (3,4-epoxy) cyclohexanecarboxylate [Celoxide (registered trademark) 2021P Daicel Chemical Manufactured by Kogyo Co., Ltd.] The same as in Example 1 except that 50 parts were used, 141.7 parts MH-700G, 364 parts PLV-3, and 3.6 parts KBM-403. An epoxy resin composition was prepared and its cured product was obtained. Evaluation was performed by the method shown in Example 1. The results are shown in Table 2.

[Example 3]
MH-700G was obtained by using 50 parts of the high-purity alicyclic diepoxy compound obtained in Synthesis Example 2 and 50 parts of bisphenol F-type epoxy resin (trade name jER YL983U manufactured by Mitsubishi Chemical Corporation) as another epoxy resin. An epoxy resin composition for semiconductor encapsulation was prepared in the same manner as in Example 1 except that 121.4 parts, 339.6 parts of PLV-3, and 3.4 parts of KBM-403 were used. Obtained. Evaluation was performed by the method shown in Example 1. The results are shown in Table 2.

[Comparative Example 1]
Except having used 100 parts of diepoxy compound A (crude product) obtained by the synthesis example 1, the epoxy resin composition for semiconductor sealing was prepared like Example 1, and the hardened | cured material was obtained. Evaluation was performed by the method shown in Example 1. The results are shown in Table 2.

[Comparative Example 2]
3,100 parts of 3,4-epoxycyclohexylmethyl (3,4-epoxy) cyclohexanecarboxylate [Celoxide (registered trademark) 2021P manufactured by Daicel Chemical Industries, Ltd.], 112.8 parts of MH-700G and PLV-3 were used. Except having used 320.7 parts and 3.2 parts of KBM-403, it carried out similarly to Example 1, and prepared the epoxy resin composition for semiconductor sealing, and obtained the hardened | cured material. Evaluation was performed by the method shown in Example 1. The results are shown in Table 2.

[Comparative Example 3]
Using bisphenol F type epoxy resin (trade name jER YL983U manufactured by Mitsubishi Chemical) 100, using 6.8 parts of MH-700G, 281.7 parts of PLV-3, and 2.8 parts of KBM-403. Except that, an epoxy resin composition for semiconductor encapsulation was prepared in the same manner as in Example 1 to obtain a cured product. Evaluation was performed by the method shown in Example 1. The results are shown in Table 2.

  From Table 2, the epoxy resin composition for semiconductor encapsulation of the present invention has a low viscosity and excellent capillary flow property even if it contains an inorganic filler in a high proportion, and its cured product has a high Tg and a linear expansion. It can be seen that the rate is low. Therefore, the epoxy resin composition for semiconductor encapsulation of the present invention can penetrate into the gap between the bumps connecting the semiconductor chip and the printed circuit board without voids in a short time, and the composition is cured and sealed. For example, when the semiconductor device is subjected to a heat cycle test, it can exhibit excellent connection reliability.

  The epoxy resin composition for semiconductor sealing of the present invention can be suitably used for sealing a high-density mounting product in which the distance between bumps is short and the gap between the chip and the package substrate is small.

DESCRIPTION OF SYMBOLS 1,1 '... Printed circuit board, 2 ... Connection wire, 3, 3' ... Semiconductor chip, 4, 4 '... Hardened | cured material of the epoxy resin composition for semiconductor sealing of this invention, 5 ... Solder bumps

Claims (8)

Of the four stereoisomers based on the configuration of two epoxy rings of the alicyclic diepoxy compound represented by the following general formula (I), detected by gas chromatography, it has an exo-exo configuration. High-purity alicyclic diepoxy compound, curing agent, curing accelerator, and inorganic whose stereoisomer content is 80% or more of the total amount of the four stereoisomers as a proportion of the peak area by gas chromatography An epoxy resin composition for semiconductor encapsulation comprising a filler.

^(Wherein, R 1 ^{to R 12} independently of one another, represent a hydrogen atom, a halogen atom, or a hydrocarbon group having 1 to 20 carbon atoms.)   Of the four stereoisomers based on the configuration of two epoxy rings of the alicyclic diepoxy compound represented by the general formula (I), the high purity alicyclic diepoxy compound is an exo-exo configuration. 2. The high purity alicyclic diepoxy compound according to claim 1, wherein the content of a stereoisomer having a ratio of a peak area by gas chromatography is 95% or more in the total amount of the four stereoisomers. Epoxy resin composition for semiconductor encapsulation.   The epoxy resin composition for semiconductor encapsulation according to claim 1 or 2, wherein the high-purity alicyclic diepoxy compound is tetrahydroindene diepoxide.   The epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 3, wherein the curing agent is an acid anhydride curing agent.   The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the curing accelerator is an imidazole curing accelerator.   The semiconductor according to claim 1, wherein the inorganic filler is spherical silica having an average particle diameter of 5 μm or less, and the content thereof is 40% by weight or more in the epoxy resin composition for semiconductor encapsulation. An epoxy resin composition for sealing.   The semiconductor according to claim 1, wherein the inorganic filler is spherical silica having an average particle size of 1 μm or less, and the content thereof is 50% by weight or more in the epoxy resin composition for semiconductor encapsulation. An epoxy resin composition for sealing.   The semiconductor device formed by sealing using the epoxy resin composition for semiconductor sealing in any one of Claims 1-7.

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