JP2012220896A - Periphery exposure method and periphery exposure device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a periphery exposure device and a periphery exposure method capable of easily recognizing ununiformity of periphery exposure width.SOLUTION: To solve the problem above, a periphery exposure method comprises steps of: holding, on a substrate holding rotation part, a substrate on which a photoresist film is formed; radiating exposure light toward the substrate with the substrate rotated on the substrate holding rotation part so that the peripheral part of the substrate is exposed to the exposure light capable of illuminating the photoresist film while the exposure light is allowed to pass outside the circumference of the substrate; and detecting, based on the exposure light passing outside the circumference of the substrate, the width of the exposure light with which the peripheral part is illuminated.

Description

  The present invention relates to a peripheral exposure method and a peripheral exposure apparatus for a photoresist film formed on a substrate such as a semiconductor wafer.

  In a semiconductor device manufacturing process, a photolithography technique is used to form a circuit pattern on the surface of a substrate such as a semiconductor wafer or a glass substrate for FPD. In photolithography technology, a photoresist film is formed on the surface of a substrate, a latent image of a circuit pattern is formed by exposing the photoresist film using a predetermined photomask, and the exposed photoresist film is developed with a developer. A circuit pattern is formed by development. The formation of the photoresist film on the surface of the substrate is performed by supplying a photoresist solution to the surface of the substrate and rotating the substrate to spread the photoresist solution on the surface of the substrate.

  Since the photoresist film formed in this way tends to be thick at the peripheral portion of the substrate, the uniformity of the exposure process may be deteriorated. Moreover, since the photoresist film in the peripheral portion is easily peeled off during the transfer or processing of the substrate, particles may be generated. Therefore, in order to remove the photoresist film at the peripheral portion of the substrate, peripheral exposure is performed by irradiating the peripheral portion with ultraviolet light after the formation of the photoresist film. Specifically, the substrate on which the photoresist film is formed is rotated by holding a spin chuck at the center of the back surface, for example, and irradiating a region of a predetermined width around the substrate with ultraviolet light. The peripheral portion of the resist film is exposed (see, for example, Patent Documents 1 and 2).

JP 2001-110712 A JP 2007-149903 A

  However, in the peripheral exposure as described above, when the center of the substrate and the rotation center axis of the spin chuck do not coincide with each other, the peripheral exposure width along the outer periphery of the substrate becomes non-uniform. If the peripheral exposure width becomes unreasonably wide, the die (chip) region on the substrate is exposed and even a defective chip may be generated. Conversely, if the peripheral exposure width is unduly narrowed, the generation of particles cannot be suppressed.

  In order to solve such a problem, for example, after the substrate is held by the spin chuck and before the peripheral exposure is started, the deviation of the center of the substrate from the rotation center of the spin chuck is detected, and based on the detection result, The peripheral exposure width is adjusted.

  However, even if the center deviation of the substrate is detected, the center deviation may occur during the period from the detection to the peripheral exposure or during the peripheral exposure. It is desirable to be able to grasp the unevenness of the peripheral exposure width when such a deviation occurs.

  The present invention has been made in view of the above circumstances, and provides a peripheral exposure apparatus and a peripheral exposure method capable of easily grasping unevenness of the peripheral exposure width.

  According to a first aspect of the present invention, a substrate on which a photoresist film is formed is held by a substrate holding rotating unit, and exposure light capable of exposing the photoresist film is irradiated to a peripheral portion of the substrate. Radiating the exposure light toward the substrate while rotating the substrate by the substrate holding and rotating unit so as to pass outside the periphery of the substrate; and the exposure light passing outside the periphery of the substrate And a step of detecting a width of the exposure light applied to the peripheral portion based on the above.

  According to a second aspect of the present invention, there is provided a substrate holding rotating unit for holding a substrate on which a photoresist film is formed; a light emitting unit for emitting exposure light capable of exposing the photoresist film; and a light receiving unit capable of detecting the exposure light; The exposure unit includes a peripheral portion of the substrate held by the substrate holding rotation unit so that a part of an optical path of the exposure light from the light emitting unit to the light receiving unit is blocked. An exposure unit; and a width of the exposure light applied to the peripheral part based on a signal output from the light receiving unit in response to the exposure light reaching the light receiving unit without being blocked by the peripheral part of the substrate There is provided a peripheral exposure apparatus including a control unit that determines whether or not the allowable range is satisfied.

  According to the embodiment of the present invention, there are provided a peripheral exposure apparatus and a peripheral exposure method that can easily grasp the unevenness of the peripheral exposure width.

It is a top view which shows the coating and developing apparatus with which the periphery exposure apparatus by embodiment of this invention is integrated. FIG. 2 is a side view of the coating and developing apparatus of FIG. 1. 1 is a schematic top view showing a peripheral exposure apparatus according to an embodiment of the present invention. It is a schematic side view which shows the periphery exposure apparatus by embodiment of this invention. It is a perspective view which shows the position with respect to the board | substrate of the position detector and peripheral exposure part in the peripheral exposure apparatus by embodiment of this invention. 5 is a flowchart illustrating a peripheral exposure method according to an embodiment of the present invention. It is the schematic which shows the positional relationship of the ultraviolet light of the periphery exposure part in the periphery exposure apparatus by embodiment of this invention, and the ultraviolet light for periphery exposure irradiated to this. It is the schematic which shows the modification of the periphery exposure part in the periphery exposure apparatus by embodiment of this invention.

  Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In all the attached drawings, the same or corresponding members or parts are denoted by the same or corresponding reference numerals, and redundant description is omitted.

A coating and developing apparatus according to an embodiment of the present invention that includes a peripheral exposure apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view of the coating and developing apparatus, and FIG. 2 is a side view of the coating and developing apparatus of FIG.
As shown in FIG. 1, the coating and developing apparatus 30 of this embodiment includes a carrier block B1, a processing block B2, and an interface block B3. The interface block B3 is coupled to the exposure apparatus B4.

  The carrier block B1 takes a wafer 60 from the carrier 60 placed on the carrier 60 and a processing block B2 on which the sealed carrier C that accommodates a plurality of wafers is placed, and transfers the wafer to the processing block B2. And a transfer arm 62 for storing the wafer processed in the processing block B2 in the carrier C.

  As shown in FIG. 2, a DEV layer L1 for performing development processing, a BCT layer L2 for forming an antireflection film as an underlayer of the photoresist film, and a photoresist solution are applied to the processing block B2. A COT layer L3 for forming an antireflection film formed on the photoresist film and a TCT layer L4 for forming an antireflection film are sequentially provided from the bottom.

In the DEV layer L1, the developing units 68 shown in FIG. 1 are stacked in, for example, two stages, and a transfer arm 69a (FIG. 2) for transferring the wafer W to the two-stage developing unit 68 is provided. ing. Although not shown, the BCT layer L2 and the TCT layer L4 are each coated with a coating unit that forms an antireflection film by spin-coating a chemical solution for the antireflection film, and a pre-process of processing performed in the coating unit. A heating unit and a cooling unit for performing post-processing are provided. Further, in order to transfer the wafer W between the units, a transfer arm 69b is arranged in the BCT layer L2, and a transfer arm 69d is arranged in the TCT layer L4.
The various units described above are provided by being stacked in a processing unit group 63 (FIG. 1) provided corresponding to each of the layers L1 to L4.

Furthermore, in the processing block B2, a first shelf unit U1 is provided on the carrier block B1 side, and a second shelf unit U2 is provided on the interface block B3 side. The first shelf unit U1 and the second shelf unit U2 are provided with a plurality of delivery units. Among these transfer units, the transfer unit indicated by reference numeral CPL + number in FIG. 2 is provided with a cooling unit for temperature adjustment, and the transfer unit indicated by reference numeral BF + number includes a plurality of wafers W. Is provided.
Further, adjacent to the first shelf unit U1 in the X direction (see FIG. 1), there is provided a transfer arm 16 that can be moved up and down to transfer the wafer W between each part of the first shelf unit U1.

  The interface block B3 includes an interface arm F, and the interface arm F transfers the wafer W between the second shelf unit U2 and the exposure apparatus B4. In the exposure apparatus B4, a predetermined exposure process is performed on the wafer W transferred from the interface arm F. In addition, a peripheral exposure apparatus 10 (described later) according to an embodiment of the present invention is disposed in the interface block B3, and the wafer W is carried into and out of the peripheral exposure apparatus 10 by the interface arm F.

  In the coating and developing apparatus 30, when a photoresist pattern is formed on the wafer W, first, the wafer W is transferred from the carrier block B1 to the transfer unit of the first shelf unit U1, for example, the transfer unit CPL2 corresponding to the BCT layer L2 by the transfer arm 62. Transport. Next, the wafer W is transferred to the transfer unit CPL3 by the transfer arm 16, and is transferred to the COT layer L3 by the transfer arm 69c. In the COT layer L3, the surface (or uppermost layer) of the wafer W is hydrophobized. Next, the film is transferred to the coating unit by the transfer arm 69c, where a photoresist film is formed. Since the surface of the wafer W is hydrophobized, the photoresist film is formed with high adhesion to the surface of the wafer W (or the underlying layer).

  Thereafter, the wafer W is transferred to the delivery unit BF3 of the first shelf unit U1 by the transfer arm 69c. The wafer W transferred to the transfer unit BF3 is transferred to the transfer unit CPL4 by the transfer arm 16, and transferred to the TCT layer L4 by the transfer arm 69d. Then, an antireflection film is formed on the photoresist film of the wafer W in the TCT layer L4, and is transported to the delivery unit TRS4. In the case where the antireflection film is not formed on the photoresist film according to the required specifications or the like, or instead of performing the hydrophobizing process on the wafer W, the antireflection film is directly applied to the wafer W by the BCT layer L2. Sometimes formed.

  A shuttle arm 700 is provided in the upper part of the DEV layer L1 (see FIG. 2). The shuttle arm 700 directly transfers the wafer W from the delivery unit CPL11 of the first shelf unit U1 to the delivery unit CPL12 of the second shelf unit U2. The wafer W on which the photoresist film and the antireflection film are formed is transferred from the transfer unit BF3 or TRS4 to the transfer unit CPL11 by the transfer arm 16 (FIG. 1), and is transferred to the transfer unit CPL12 by the shuttle arm 700.

  The wafer W transferred to the transfer unit CPL12 by the shuttle arm 700 is transferred to the peripheral exposure apparatus 10 by the interface arm F (FIG. 1) of the interface block B3. In the peripheral exposure apparatus 10, the photoresist film formed on the periphery of the surface of the wafer W is exposed. The wafer W on which the peripheral exposure has been performed is taken out from the peripheral exposure apparatus 10 by the interface arm F and transferred to the exposure apparatus B4. Then, after the photoresist film formed on the wafer W is exposed in the exposure apparatus B4, the wafer W is transferred to the delivery unit TRS6 of the second shelf unit U2 by the interface arm F. Subsequently, the wafer W is transferred to the DEV layer L1 by the transfer arm 69a. Here, after the exposed photoresist film is developed, the wafer W is transferred to the transfer unit TRS1 of the first shelf unit U1 by the transfer arm 69a. The carrier arm 62 accommodates the carrier C. In this way, a photoresist pattern is formed on the wafer W by the coating and developing apparatus 30 of the present embodiment.

Next, the peripheral exposure apparatus 10 according to the embodiment of the present invention will be described with reference to FIGS. 3 to 5 and FIG.
Referring to FIGS. 3 and 4, the peripheral exposure apparatus 10 has a housing 50 in which a loading / unloading port 51 for the wafer W is formed at one end. The wafer W is loaded into the housing 50 through the loading / unloading port 51 by the interface arm F and unloaded from the housing 50. Further, in the housing 50, a chuck 80 that holds the wafer W by sucking the center of the back surface of the wafer W, a motor 81 (FIG. 4) that rotates the chuck 80, and the chuck 80 and the motor 81 are connected to the loading / unloading port 51 side. Alternatively, a moving mechanism 90 (FIG. 4) that moves toward the exposure unit 60, a position detector 100 that detects the amount of eccentricity from the center of the wafer W held by the chuck 80, and an upper part opposite to the loading / unloading port 51. A transfer unit provided between the exposure unit 60 that irradiates the peripheral portion of the wafer W with ultraviolet light and the interface arm F inserted into the housing 50 from the loading / unloading port 51 and the chuck 80; A buffer 85 is provided.

In the example shown in FIG. 5, the position detector 100 is arranged at a position shifted from the exposure unit 60 by 180 ° with respect to the center of the chuck 80, and includes the light emitting unit 9 and the light receiving unit 11 that sandwich the peripheral part of the wafer W from above and below. Have. As shown in FIG. 3, the position detector 100 may be disposed at a position shifted by 90 ° from the exposure unit 60 with respect to the center of the chuck 80.
In the present embodiment, the light emitting unit 9 emits light having a wavelength that does not expose the photoresist film formed on the wafer W. For example, an LED lamp that emits yellow light or red light can be used as the light emitting unit 9. The light receiving unit 11 is constituted by, for example, a charge coupled device (CCD) line sensor. The CCD line sensor as the light receiving unit 11 is arranged so that the longitudinal direction thereof intersects the edge of the wafer W held on the chuck 80. Further, the LED lamp as the light emitting unit 9 is arranged so that the entire light receiving surface of the CCD line sensor 11 can be irradiated when the wafer W is not held by the chuck 80. Thereby, when the chuck 80 holds the wafer W, an area that is shielded by the wafer W in the CCD line sensor 11 and an area that is irradiated with light without being shielded are generated. The edge of the wafer W can be detected based on the position of the boundary between these regions.

  As shown in FIGS. 4 and 5, the exposure unit 60 includes a light source 61, a condensing mirror 62 that condenses light from the light source 61, a light source box 63 that houses the light source 61 and the condensing mirror 62, and a light source A rod 65 provided under the box 63 and guiding ultraviolet light from the light source 61 to the optical system 64; a mask 67 having a rectangular opening 66 disposed near the lower end opening of the rod 65 and adjusting the exposure area; And an ultraviolet light sensor 70 that detects ultraviolet light transmitted through the rectangular opening 66 of the mask 67. In the light source box 63, a shutter 61S is provided between the light source 61 and the rod 65.

  The light source 61 emits, for example, ultraviolet light (UV light) including a wavelength component capable of exposing the photoresist film formed on the wafer W. Specifically, an ultrahigh pressure UV lamp, a high pressure UV lamp, a low pressure UV lamp, an excimer lamp, or the like can be used as the light source 61 according to the photoresist film to be used. Further, as the ultraviolet light sensor 70, a light receiving element (for example, a semiconductor ultraviolet light element) having sensitivity to the ultraviolet light from the light source 61 can be used.

  The optical system 64 includes, for example, a plurality of lenses, converts the ultraviolet light guided by the rod 65 into substantially parallel light, and irradiates the mask 67. The rectangular opening 66 of the mask 67 can have, for example, a width w of 4 mm and a length t (see FIG. 5) of 5 mm. As a result, ultraviolet light having a cross section having a width of 4 mm and a length of 5 mm is emitted toward the ultraviolet light sensor 70. The ultraviolet light sensor 70 (light receiving surface thereof) preferably has a width larger than the width w of the rectangular opening 66 of the mask 67. Accordingly, as shown in FIG. 7A1, when the ultraviolet light L that has passed through the mask 67 is directly irradiated to the UV light sensor 70 without being blocked by the wafer W, as shown in FIG. In the width direction, the ultraviolet light L can be accommodated inside the ultraviolet light sensor 70.

  Note that the exposure unit 60 has a certain width (for example, 0.1 mm to 4.0 mm) from the edge of the wafer W with respect to the peripheral portion of the wafer W held eccentrically by the chuck 80 (located on the exposure unit 60 side). ) Is positioned so as to be irradiated with ultraviolet light.

  3 and 4 again, the moving mechanism 90 includes a chuck support 91 that supports the chuck 80 and the motor 81, and a ball screw mechanism 92 that moves the chuck support 91 to the loading / unloading port 51 side or the exposure unit 60 side. And have. The ball screw mechanism 92 includes a screw shaft 93 that engages (screws) the chuck support base 91 so as to be movable in the axial direction, and a moving motor 94 that rotates the screw shaft 93 forward and backward. A pair of guide shafts 95 that slidably support the chuck support base 91 are provided in parallel with the screw shaft 93. In the moving mechanism 90 configured as described above, the moving motor 94 rotates the screw shaft 93 in the forward and reverse directions, so that the chuck support 91 and the chuck 80 and the motor 81 are moved to the loading / unloading port 51 side or the exposure unit 60 side. Moved to.

  As shown in FIG. 3, the buffer 85 includes a support plate 86 having an arc-shaped notch 86 a surrounding the outside of the chuck 80 when viewed from above, three support pins 87 standing on the support plate 86, and An elevating mechanism (for example, an elevating air cylinder) 88 that elevates and lowers the support plate 86 in the vertical direction of the chuck 80 is provided. The buffer 85 configured as described above moves upward from the chuck 80 by driving the air cylinder 88 as shown by a two-dot chain line in FIG. 4, thereby supporting the wafer W held by the interface arm F with the support pins 87. Then, the wafer W can be delivered to the chuck 80 by descending below the chuck 80. Conversely, the wafer W held by the chuck 80 is received by the support pins 87 from the lower position of the chuck 80, and then enters the housing 50 of the peripheral exposure apparatus 10 to enter the wafer W. The wafer W can be delivered to the interface arm F located below the head.

  The chuck 81 driving motor 81, the moving motor 94, the lifting air cylinder 88, and the position detector 100 are electrically connected to a control unit 200 including, for example, a central processing unit (CPU). . The control unit 200 has a storage unit (not shown). For example, information such as the distance from the edge of the wafer W to a chip (element) in the wafer W, the alignment position and dimensions, and detection information from the position detector 100. Can be stored. Based on these pieces of information, the control unit 200 can operate the motor 81, the moving motor 94, the lifting air cylinder 88, and the like.

Hereinafter, the case where the peripheral exposure method according to the embodiment of the present invention is performed using the above-described coating and developing apparatus 30 and the peripheral exposure apparatus 10 will be described as an example with reference to FIGS. For this reason, in the following description, FIGS. 3 to 5 are also referred to as appropriate.
(Wafer loading)
First, the chuck support 91 is moved to the loading / unloading port 51 side by the moving mechanism 90 (see the chuck support 91 shown by the solid line in FIG. 4). As a result, the motor 81 and the chuck 80 supported by the chuck support 91 are positioned on the loading / unloading port 51 side (a position desired for the loading / unloading port 51). Next, a photoresist film is formed in the coating and developing apparatus 30, and the pre-baked wafer W is loaded into the housing 50 through the loading / unloading port 51 by the interface arm F. The wafer W held by the interface arm F is transferred to the chuck 80 by the support plate 86 and the support pins 87, and is held by the chuck 80 by suction (step S61).

(Adjusting the intensity of UV light for exposure)
While the wafer W is being loaded (or while it is on the loading / unloading port 51 side after loading), the light source 61 of the exposure unit 60 is turned on and the shutter 61S is opened, so that the ultraviolet light from the light source 61 is converted into the rod 65, optical The ultraviolet light sensor 70 is irradiated through the system 64 and the mask 67. The intensity of the irradiated ultraviolet light is measured, and the power supplied to the light source 61 is adjusted based on the measured value. Thereby, the intensity of the ultraviolet light from the light source 61 is adjusted to, for example, the exposure intensity determined by the specifications of the photoresist to be used (step S62). The intensity of the ultraviolet light sensor 70 that receives the adjusted intensity of ultraviolet light is stored in a storage unit (not shown) of the control unit 200. The intensity adjustment is thus completed, the shutter 61S is closed, and ultraviolet light irradiation to the ultraviolet light sensor 70 is prevented.

(Eccentricity detection of wafer W)
Next, the chuck support 91 is moved to the exposure unit 60 side by the moving mechanism 90, and the motor 81, the chuck 80, and the wafer W held by the chuck 80 are positioned on the exposure unit 60 side. At this time, the peripheral portion of the wafer W is located between the mask 67 of the exposure unit 60 and the ultraviolet light sensor 70 as shown by a one-dot chain line in FIG. 4, and the position detector 100 is shown in FIG. It is located between the light emitting unit 9 and the light receiving unit 11.

  Next, in step S63, under the control of the control unit 200, the light emitting unit 9 of the position detector 100 is turned on, and the motor 81 is activated to rotate the chuck 80 and the wafer W once at a predetermined speed. At this time, a part of the light from the light emitting unit 9 is blocked by the wafer W and irradiated to the light receiving unit 11. Thereby, the light receiving unit 11 outputs a signal including information on the boundary between the irradiated region and the non-irradiated region (hereinafter referred to as a position signal for convenience) to the control unit 200. The control unit 200 that has received the position signal can grasp the position of the boundary from the position signal. Further, the grasped boundary position and the rotation angle (0 to 360 °) of the wafer W are associated with each other and stored in a storage unit (not shown) of the control unit 200.

(Peripheral exposure)
Subsequently, in step S64, the shutter 61S of the exposure unit 60 is opened, and ultraviolet light having a predetermined intensity adjusted in advance is emitted toward the peripheral portion of the wafer W, and the motor 81 is started to start the chuck 80. The wafer W rotates once at a predetermined speed. At this time, the control unit 200 controls the moving mechanism 90 based on the relationship between the rotation angle of the wafer W previously grasped and stored and the position of the above-mentioned boundary, and the eccentricity of the wafer W (the rotation center of the chuck 80 and the wafer 80). The deviation of the irradiation width of the ultraviolet light caused by the deviation of the center of W) is offset. For example, as a result of detection using the position detector 100, it is known that the edge of the wafer W is shifted by α μm in the center direction of the wafer W at a certain rotation angle θ1. In this case, the chuck 80 is moved by the moving mechanism 90 so that the edge of the wafer W is shifted outward by α μm at the rotation angle θ1 + (difference in angle between the exposure unit 60 and the position detector 100). By continuously moving the chuck 80 as the wafer W rotates, the peripheral portion of the wafer W can be irradiated with ultraviolet light with a certain width.

On the other hand, while the ultraviolet light from the light source 61 of the exposure unit 60 is irradiated on the peripheral portion of the wafer W (while the wafer W rotates once), the ultraviolet light sensor 70 of the exposure unit 60 is also changed to the ultraviolet light sensor 70. A signal reflecting the intensity of the irradiated ultraviolet light (hereinafter referred to as an exposure width signal for convenience) is output to the control unit 200.
That is, as shown in FIG. 7B 1, part of the ultraviolet light L from the light source 61 is blocked by the wafer W, and the ultraviolet light L that has passed outside the edge of the wafer W reaches the ultraviolet light sensor 70. For this reason, as shown in FIG. 7 (b2), a shadow (a portion indicated by a right-upward oblique line) is generated by the wafer W, and the ultraviolet light sensor 70 has a region S (hereinafter referred to as an irradiation area S) indicated by a right-downward oblique line. Only UV light is irradiated. Then, an exposure width signal having an intensity corresponding to the irradiation area S is output from the ultraviolet light sensor 70. Here, as shown in FIGS. 7B1 and 7C1, the irradiation area S corresponds to the deviation (eccentricity) between the center Cw of the wafer W and the rotation center Cc of the chuck 80, as shown in FIG. ) And FIG. 7 (c2). Accordingly, an exposure width signal having an intensity corresponding to the deviation is output from the ultraviolet light sensor 70. The control unit 200 that has input the exposure width signal normalizes the exposure width signal based on the ultraviolet light intensity obtained when the ultraviolet light intensity is previously adjusted, and the intensity of the standardized exposure width signal becomes an exposure width determined by the specification. It is determined whether it is within a predetermined range corresponding to the allowable range (step S65). If it is determined that the predetermined range is exceeded (step S65: NO), the wafer W is unloaded from the peripheral exposure apparatus 10, returned to the original carrier C, and soft-marked. Further, an alarm signal may be output, and the wafer number of the wafer W may be displayed on the operation panel of the coating and developing apparatus 30, for example.

(Exposure and development processing of wafer W)
On the other hand, when it is determined that the exposure width signal is within the predetermined range (step S65: NO), the wafer W is unloaded from the peripheral exposure apparatus 10, and thereafter, the wafer W is exposed by the interface arm F to the exposure apparatus. Transferred to B4, the photoresist film inside the peripheral portion of the wafer W is exposed and developed, and a photoresist mask having a circuit pattern is formed. Thereafter, the wafer W is returned to the original carrier C. The soft-marked wafer W is taken out of the carrier C and reworked.

As described above, according to the peripheral exposure method according to the embodiment of the present invention performed using the peripheral exposure apparatus 10 according to the embodiment of the present invention, the peripheral exposure is performed by irradiating the periphery of the wafer W with the exposure light. During exposure, the exposure width is monitored by using exposure light for peripheral exposure. That is, it can be determined whether or not the exposure width falls within the allowable range based on the exposure width signal corresponding to the exposure light reaching the ultraviolet light sensor 70 without being blocked by the peripheral portion of the wafer W.
As described above, even if the eccentricity of the wafer W is detected by the position detector 100 prior to the peripheral exposure and the exposure width is made constant based on this, the wafer is detected for the peripheral exposure, for example, after the eccentricity is detected. When the wafer W is displaced with respect to the chuck 80 when starting to rotate W, the control based on the result of the eccentricity detection is meaningless, and a defective exposure width cannot be found. However, according to the peripheral exposure method according to the embodiment of the present invention, since the exposure width is monitored during the peripheral exposure, a defect in the exposure width can be found.

  Moreover, since the peripheral exposure light source 61 and the ultraviolet light sensor 70 provided for adjusting the intensity of the peripheral exposure ultraviolet light emitted by the peripheral exposure light source 61 are used, additional equipment and components are added to the peripheral exposure apparatus 10. There is no need to add. That is, the cost of the peripheral exposure apparatus 10 is not increased.

  The present invention has been described above with reference to some embodiments. However, the present invention is not limited to the above-described embodiments, and various modifications and changes can be made in light of the appended claims. .

  For example, the ultraviolet light sensor 70 of the exposure unit 60 is disposed below the wafer W held by the chuck 80 so that the light receiving surface faces in the lateral direction as shown in FIG. Alternatively, the ultraviolet light L that passes outside may be guided to the ultraviolet light sensor 70 by being reflected by the plane mirror M1. If the space below the wafer W held by the chuck 80 is used, the peripheral exposure apparatus 10 can be downsized. Even in this case, an exposure width signal corresponding to the ultraviolet light reaching the ultraviolet light sensor 70 is output without being blocked by the peripheral portion of the wafer W, and the same effect as in the above-described embodiment is achieved. . Further, instead of the flat mirror M1, a concave mirror M2 may be used as shown in FIG.

  In the above-described embodiment, the optical system 64 that converts the ultraviolet light from the rod 65 into substantially parallel light is used, but this is not always necessary. Further, a condensing lens may be used instead of the optical system 64.

  In the above embodiment, the peripheral exposure apparatus 10 is disposed in the interface block B3 of the coating and developing apparatus 30, but may be disposed in the processing unit group 63 or the second shelf unit U2 of the processing block B2.

  The peripheral exposure method and peripheral exposure apparatus according to the embodiment of the present invention can be applied not only to a semiconductor wafer but also to peripheral exposure for a photoresist film formed on a glass substrate for FPD or a resin substrate.

  30 ... Coating / developing device, B1 ... carrier block, B2 ... processing block, B3 ... interface block, B4 ... exposure device, C ... carrier, 63 ... processing unit group, U1 ... 1st shelf unit, U2 ... 2nd shelf unit, F ... Interface arm, 10 ... Peripheral exposure device, 50 ... Housing, 51 ... Loading / unloading port, 60 ...・ Exposure unit, 61 ... light source, 70 ... ultraviolet light sensor, 80 ... chuck, 81 ... motor, 85 ... buffer, 100 ... position detector, 9 ... light emitting unit , 11... Light receiving unit, 64... Optical system, 65... Rod, 66... Rectangular opening, 67. ... Ball screw mechanism, 93 ... Screw shaft, 94 Moving motor, W ··· wafer.

Claims (8)

Holding the substrate on which the photoresist film is formed by the substrate holding rotating unit;
Exposure light capable of exposing the photoresist film is directed to the substrate while rotating the substrate by the substrate holding rotation unit so that the peripheral portion of the substrate is irradiated and passes outside the periphery of the substrate. Emitting the exposure light;
Detecting a width of the exposure light applied to the peripheral portion based on the exposure light that has passed outside the periphery of the substrate.   In the detecting step, the exposure light passing through the outer periphery of the substrate is received by a light receiving unit having sensitivity to the exposure light, and the exposure light irradiation area irradiated on the light receiving surface of the light receiving unit The peripheral exposure method according to claim 1, wherein a signal based on the output is output. Prior to the radiating step, a displacement detection step for detecting displacement between a rotation center axis of the substrate holding rotation unit and a center of the substrate held by the substrate holding rotation unit;
The peripheral exposure according to claim 1, further comprising: correcting the positional deviation detected in the positional deviation detection step while rotating the substrate by the substrate holding rotation unit in the radiating step. Method. In the misregistration detection step, the substrate holding and rotating unit causes the substrate to rotate so that the detection light that does not expose the photoresist film is irradiated to the periphery of the substrate and passes outside the periphery of the substrate. Emitting the light for detection toward the substrate while rotating, and
The peripheral exposure method according to claim 3, wherein the positional deviation is detected based on the detection light that has passed outside the periphery of the substrate.   5. The peripheral exposure method according to claim 3, wherein in the step of correcting the positional deviation, a position of the substrate holding rotation unit is adjusted so as to correct the positional deviation. A substrate holding rotating unit for holding a substrate on which a photoresist film is formed;
An exposure unit including a light emitting unit that emits exposure light capable of exposing the photoresist film and a light receiving unit capable of detecting the exposure light, the peripheral portion of the substrate held by the substrate holding rotating unit, The exposure unit arranged so as to block a part of the optical path of the exposure light from the light emitting unit to the light receiving unit; and according to the exposure light reaching the light receiving unit without being blocked by the peripheral part of the substrate And a control unit that determines whether or not the width of the exposure light applied to the peripheral portion falls within an allowable range based on a signal output from the light receiving unit;
A peripheral exposure apparatus including: A substrate position detection unit including a second light emitting unit that emits detection light that does not expose the photoresist film, and a second light receiving unit that can detect the detection light, the substrate holding rotation unit A position detection unit arranged so that a part of the optical path of the detection light from the second light emitting unit to the second light receiving unit is blocked by a peripheral portion of the substrate held by Prepared,
Based on a signal output from the second light receiving unit in response to the detection light reaching the second light receiving unit without being blocked by a peripheral part of the substrate, the control unit and the substrate The peripheral exposure apparatus according to claim 6, wherein a positional deviation with respect to the substrate holding rotation unit is obtained.   The peripheral exposure apparatus according to claim 6, wherein the control unit adjusts a position of the substrate holding rotation unit so as to correct the obtained positional deviation.

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