JP2012204443A - Semiconductor device and manufacturing method of the same - Google Patents

Abstract

An object of the present invention is to provide a semiconductor device capable of preventing and protecting a device from damage and a manufacturing method thereof.
A first laminated body 10 in which a wiring layer 3 is formed on a substrate 1 is disposed on the principal surface of the first laminated body 10 so that the principal surface thereof is overlapped. With respect to the semiconductor device 100 configured by the second stacked body 20 in which 13 is formed and the functional element formed on at least one substrate of the first stacked body 10 or the second stacked body 20, The first laminated body 10 and the second laminated body 20 are disposed around the functional elements 2 and 12 when viewed from the direction perpendicular to the main surfaces of the first laminated body 10 and the second laminated body 20. A penetrating metal member 29 penetrating the interface is provided. Further, the through metal member 29 is provided with a through hole penetrating the first laminated body 10 and the second laminated body 20 after the first laminated body 10 and the second laminated body 20 are joined. It can be formed by embedding metal inside.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor device having a multilayer structure and a method for manufacturing the same.

In recent years, with the trend toward miniaturization of semiconductors, instead of more Moore aiming at high integration by further miniaturization of the mask process, beyond Moore has stacked elements in a direction perpendicular to the substrate and connected wires in three dimensions. Attention has been paid.
The RC between the elements can be reduced by stacking in the three-dimensional direction, and the cost can be reduced if the packaging technology development at the wafer level progresses.

  For example, Patent Document 1 below discloses that a buried wiring is first formed on a first layer wafer, and after the wafer process is finished, the Si substrate is ground to expose the buried wiring. Yes. Then, bumps are formed on the exposed wiring, and bonded to a second layer wafer produced in the same manner, and electrical conduction between the first layer and the second layer is established through the bumps.

  Further, in Non-Patent Document 1 below, after the circuits are bonded together, a hole is formed so as to contact or penetrate a conductive pad portion provided in advance in each wafer, and a conductive material is placed in the hole. A technique for establishing conduction between wafers by embedding is disclosed.

  On the other hand, in a semiconductor device, for example, a wiring in a multilayer wiring region configured by alternately providing insulating layers and wiring layers on a semiconductor element, or a connecting portion that connects these wirings through an interlayer insulating film A seal ring composed of

  For example, Patent Document 2 below discloses that a seal ring is disposed in a wiring layer, and a groove that penetrates the protective film and reaches between the low dielectric constant film and the protective film is formed outside the seal ring. Yes. This suppresses the progress of cracks generated when dicing a wafer having a structure including a low dielectric constant interlayer film by the groove and the seal ring. Thereby, it is supposed that peeling at the time of dicing can be prevented.

JP 11-261000 A JP 2006-140404 A

`` A 4-side tileable back illuminated 3D-integrated Mpixel CMOS image sensor '', Suntharalingam, V .; Berger, R .; Clark, S .; Knecht, J .; Messier, A .; Newcomb, K .; Rathman , D .; Slattery, R .; Soares, A .; Stevenson, C .; Warner, K .; Young, D .; Lin Ping Ang; Mansoorian, B .; Shaver, D .; ISSCC 2009,

At the time of manufacturing a semiconductor device, it is necessary to prevent the device from being damaged by a crack generated when the substrate is separated into pieces, and to prevent moisture or the like from entering the device.
For this reason, as described above, it is possible to prevent damage to the device by providing a structure such as a seal ring. Establishing a technology for protecting the device improves yield and has high reliability. It is a very important factor in providing high quality products.

  Therefore, an object of the present technology is to provide a semiconductor device capable of preventing and protecting a device from damage and a manufacturing method thereof.

In order to solve the above problems, a semiconductor device according to the present technology is provided with a first stacked body in which a wiring layer is formed on a substrate, and a main surface of the first stacked body overlaid on the main surface of the first stacked body. And a second stacked body in which a wiring layer is formed on the substrate.
Further, the functional element formed on at least one substrate of the first laminated body or the second laminated body, and the function as viewed from the direction perpendicular to the main surface of the first laminated body and the second laminated body. A penetrating metal member disposed around the element and penetrating the interface between the first laminate and the second laminate.

In the method for manufacturing a semiconductor device according to the present technology, first, a first stacked body in which a wiring layer is formed on a substrate, a second stacked body in which a wiring layer is formed on the substrate, and a first stacked body. Alternatively, a functional element disposed in at least one of the second stacked bodies is formed.
And the main surface of the formed 1st laminated body and the main surface of a 2nd laminated body are joined. Thereafter, as viewed from a direction perpendicular to the main surface of the first stacked body and the main surface of the second stacked body, the substrate of the first or second stacked body is penetrated around the functional element, and at least the first A through hole reaching the interface between the laminate and the second laminate is formed, and a metal is embedded in the through hole.

In another manufacturing method of a semiconductor device according to the present technology, first, a first stacked body in which a wiring layer and a seal ring are formed on a substrate, and a second stacked body in which the wiring layer and a seal ring are formed on the substrate. And at least one of the first laminated body and the second laminated body, and is provided inside the seal ring when viewed from a direction perpendicular to the main surface of the first laminated body and the second laminated body. And a functional element.
And the main surface of the 1st laminated body and the 2nd laminated body are piled up, and the seal ring arrange | positioned at the 1st laminated body and the seal | sticker arrange | positioned at the 2nd laminated body in the superimposed main surface A semiconductor device is manufactured by joining the ring.

  According to the semiconductor device and the manufacturing method thereof according to the present technology, the penetrating metal member penetrating the interface between the first stacked body and the second stacked body is disposed around the functional element. For this reason, moisture penetrating through the interface between the first laminated body and the second laminated body, surrounding atmospheric components, and the like can be blocked by the penetrating metal member.

  According to the semiconductor device and the manufacturing method thereof of the present disclosure, it is possible to prevent moisture and surrounding atmospheric components from entering the region where the functional element is formed. For this reason, a functional element can be protected and a high quality semiconductor device can be provided.

1 is a schematic cross-sectional view of a semiconductor device according to a first embodiment of the present technology. It is explanatory drawing which shows the state in which a water | moisture content and the surrounding atmosphere component permeate in the semiconductor device of a comparative example. In the semiconductor device according to the first embodiment, the intrusion of moisture and surrounding atmospheric components is prevented. It is explanatory drawing which shows the arrangement pattern of the penetration metal member in the semiconductor device by 1st Embodiment. FIG. 5A is an explanatory diagram illustrating a state before the first stacked body and the second stacked body are bonded, and FIG. 5B illustrates a state where the first stacked body and the second stacked body are bonded. It is explanatory drawing which shows. FIG. 6A is an explanatory diagram illustrating a state in which a metal penetrating member is formed, and FIG. 6B is an explanatory diagram illustrating a state in which an insulating film, a terminal, and a passivation film are formed on a substrate on the second stacked body side. It is a schematic sectional drawing showing the composition of the semiconductor device by the 1st modification of this art. It is a schematic sectional drawing which shows the structure of the semiconductor device by the 2nd modification of this technique. It is a schematic sectional drawing which shows the structure of the semiconductor device by 2nd Embodiment of this technique. FIG. 10A is an explanatory diagram illustrating a state before the first stacked body and the second stacked body are bonded, and FIG. 10B illustrates a state in which the first stacked body and the second stacked body are bonded. It is explanatory drawing which shows. FIG. 11A is an explanatory diagram illustrating a state in which a via is formed, and FIG. 11B is an explanatory diagram illustrating a state in which an insulating film, a terminal, and a passivation film are formed on a substrate on the second stacked body side. It is a schematic sectional drawing which shows the structure of the semiconductor device by 3rd Embodiment of this technique. It is a schematic sectional drawing which shows the structure of the semiconductor device by 4th Embodiment of this technique. FIG. 14A is an explanatory view showing a state in which a substrate is formed on the first stacked body, and FIG. 14B is an explanatory view showing a state in which a functional element and a planarizing film are formed on the substrate. FIG. 15A is an explanatory view showing a state in which a wiring layer is formed on the planarizing film, and FIG. 15B is an explanatory view showing a state in which an insulating film, a terminal, and a passivation film are formed on the wiring layer. It is a schematic sectional drawing showing the composition of the semiconductor device by a 5th embodiment of this art.

Examples of modes for carrying out the present technology will be described below, but the present technology is not limited to the following examples.
The description will be given in the following order.
1. First Embodiment (Example in which a penetrating metal member penetrating the interface between the first laminate and the second laminate is provided)
2. 1st modification (example in which joining surfaces differ)
3. Second modification (example in which three or more laminates are joined)
4). 2nd Embodiment (example which comprises a penetration metal member by directly joining seal rings in each layered product)
5. Third embodiment (example in which a penetrating metal member is provided separately from the seal ring)
6). Fourth Embodiment (Example in which a substrate is directly formed on the first laminate)
7). Fifth embodiment (example of providing a gap penetrating the interface)

1. 1st Embodiment (example which provides the penetration metal member which penetrates the interface of a 1st laminated body and a 2nd laminated body)
1-1. Configuration of Semiconductor Device FIG. 1 is a schematic cross-sectional view showing a semiconductor device 100 according to the first embodiment. The semiconductor device 100 according to the present embodiment includes a first stacked body 10 in which the functional element 2 and the wiring layer 3 are formed on the substrate 1, and a second stack in which the functional element 12 and the wiring layer 13 are formed on the substrate 11. A laminate 20 is provided.

The first stacked body 10 includes, for example, a substrate 1, a functional element 2 formed on the substrate 1, and a wiring layer.
As the substrate 1, for example, a Si substrate or a glass substrate can be used, and it may be made of other metals.
A functional element 2 is formed on the main surface of the substrate 1. The functional element 2 is not limited to a transistor, for example, and may be various elements such as a MEMS actuator and a sensor element, and is protected by a seal ring 8 described later.
Note that an insulating film 7 such as SiO ₂ , SiN, SiON, TEOS or the like is provided on the main surface of the substrate 1 opposite to the surface on which the functional elements 2 are arranged, and insulation of the substrate 1 is ensured. .

A wiring layer 3 is formed on the substrate 1 and the functional element 2 through a flattening film (insulating film) 6 made of, for example, SiO ₂ , NSG (Nondoped Silicate Glass), PSG (Phospho Silicate Glass), TEOS (Tetraethyl orthosilicate), or the like. Has been placed. Here, the wiring layer 3 has a multilayer wiring structure in which, for example, a first wiring layer 5a, a second wiring layer 5b, a third wiring layer 5c, and a fourth wiring layer 5d are sequentially stacked. Wiring is embedded in each. Examples of the wiring material include W, Al, and Cu.
For example, SiCN or SiN is used for the interlayer insulating films 4a, 4c, 4e, and 4g in each wiring layer, and a low dielectric constant material such as organic silica glass is used for the interlayer insulating films 4b, 4d, 4f, and 4h. , SiO ₂ or the like is used.

Further, the wirings in the first wiring layer 5 a to the fourth wiring layer 5 d are connected around the functional element 2 when viewed from the direction perpendicular to the main surface of the substrate 1, and sealed so as to surround the functional element 2. A ring 8 is formed.
By this seal ring 8, it is possible to prevent the crack from progressing to a region where the functional element 2 is formed and to protect the functional element 2. The material constituting the seal ring 8 is preferably a material with high water resistance in order to protect the functional element 2, and for example, W, Al, Cu, Ta, Ti, TiN, etc. mentioned as the above-mentioned wiring material are used. Can do.

On the other hand, the second stacked body 20 includes a substrate 11, a functional element 12 and a wiring layer 13 formed on the main surface of the substrate 11.
The board | substrate 11 is not specifically limited like the board | substrate 1, For example, you may use a Si substrate, a glass substrate, and another metal substrate.
Further, the functional element 12 is not limited to the same as the functional element 2, and various elements other than the transistor may be arranged.

A planarizing film (insulating film) 16 made of, for example, SiO ₂ , NSG, PSG, TEOS or the like is formed on the main surface of the substrate 11 on which the functional element 12 is formed and on the functional element 12, and wiring is formed on the planarizing film 16. Layer 13 is formed. The wiring layer 13 has, for example, a multilayer wiring structure including a first wiring layer 15a, a second wiring layer 15b, and a third wiring layer 15c, and wirings are arranged in the respective wiring layers.
The interlayer insulating films 14b, 14d, and 14f in each wiring layer are made of, for example, a low dielectric constant material such as organic silica glass, SiO ₂ or the like, and the interlayer insulating films 14a, 14c, and 14e are made of, for example, SiCN or SiN. Used.

A substrate penetrating member 26 that penetrates the substrate 11 and the wiring layer 13 is provided around the functional element 12 when viewed from a direction perpendicular to the main surface of the substrate 11. The substrate penetrating member 26 is formed in the same manner as so-called TSV (Through Silicon Via).
Therefore, for example, W, Poly-Si, Cu, Al, Au, Sn, or Ti, TiN, Ta, TaN or MCVD (Metal Chemical Vapor Deposition) technology has been established for the substrate penetrating member 26, or those thereof. A stack structure, an alloy, or the like can be used.
However, the substrate penetrating member 26 does not electrically connect the circuit in the first stacked body 10 and the circuit in the second stacked body 20. In the present embodiment, the substrate penetrating member is disposed as a seal ring that protects the functional element 12.

An insulating film 17 such as SiO ₂ , SiN, or TEOS is formed on the main surface of the substrate 11 opposite to the surface on which the functional element 12 is formed. On the insulating film 17, for example, a terminal 21 such as Al used for connection to the outside is arranged to be embedded. A passivation film 19 made of, for example, resin is formed on the insulating film 17.

The main surface on the wiring layer 3 side in the first stacked body 10 is superimposed on the main surface on the wiring layer 13 side in the second stacked body 20. And it joins in this overlapped interface.
This bonding may be performed by applying an adhesive such as a resin and using the adhesive layer 22, and various other methods such as plasma bonding, metal bonding, and glass anodic bonding may be used as appropriate. At the time of joining, the first stacked body 10 and the second stacked body 20 may be configured to be electrically connected, and the first stacked body 10 and the second stacked body 20 may be connected to each other. The structure which is not electrically connected may be sufficient.

Further, the seal ring 8 and the substrate penetrating member 26 are connected and integrated to form a penetrating metal member 29 penetrating the interface between the first laminate 10 and the second laminate 20.
Thus, by providing the penetrating metal member 29 so as to surround the functional elements 2 and 12 when viewed from the direction perpendicular to the main surfaces of the first stacked body 10 and the second stacked body 20, the functional elements 2 and 12 can be protected more reliably.

For example, FIG. 2 is a schematic cross-sectional view of the semiconductor device 110 in which a penetrating metal member penetrating the interface between the first stacked body 10a and the second stacked body 20a is not provided, and this will be described as a comparative example. .
The semiconductor device 110 is provided with a seal ring 8a of the first stacked body 10a and a seal ring 18a of the second stacked body 20a surrounding a predetermined circuit formation region.

For example, when dicing is performed at the position indicated by the arrow A1 and the semiconductor device 110 is separated into pieces, moisture, ambient atmospheric components, and the like are generated from the interface 23a between the first stacked body 10a and the second stacked body 20a on the cut surface. There is a risk of intrusion.
When the infiltrated moisture and surrounding atmospheric components pass through the interface 23a as shown by an arrow A2 and reach the area where the functional element is disposed over the seal rings 8a and 18a, the area and the functional element are oxidized and corroded. There is a risk of letting you.

In general, the seal ring is configured by wirings in a wiring layer and contact portions that connect the wirings in each wiring layer. Therefore, when the functional elements are arranged three-dimensionally, if there is a region where no wiring layer is formed in the stacking direction, a seal ring cannot be formed in that region.
For example, as illustrated in FIG. 2, when the first stacked body 10 and the second stacked body 20 are joined, the stack is formed in the vicinity of the interface between the first stacked body 10 and the second stacked body 20. There is a region where the seal rings 8a and 18a are not arranged in the direction. For this reason, it is difficult to protect the functional element.

In contrast, FIG. 3 is a schematic cross-sectional view of the semiconductor device 100 according to the present embodiment.
For example, it is assumed that dicing is performed at a position indicated by an arrow A3 to separate the semiconductor device 110 into pieces. Even if moisture, ambient atmosphere components, and the like travel along the interface 23 between the first laminate 10 and the second laminate 20 as indicated by an arrow A4, these moisture, ambient atmosphere components, and the like pass through the interface 23. It is possible to block by the penetrating metal member 29 that penetrates.
Therefore, by disposing the penetrating metal member 29 around the functional elements 2 and 12 when viewed from the direction perpendicular to the main surfaces of the first stacked body 10 and the second stacked body 20, the functional elements 2 and 12 can be protected.

FIG. 4 is a schematic explanatory view showing an example of the formation pattern of the through metal member 29. FIG. 4 shows a state viewed from a direction perpendicular to the main surface of the semiconductor device 100.
As shown in FIG. 4A, a gap is continuously provided in a closed shape surrounding the functional elements 2 and 12 of the semiconductor device 100 and a circuit formation region thereof around the functional elements 2 and 12 (not shown). Also good. As a result, it is possible to more reliably prevent moisture and surrounding atmospheric components from entering the region surrounded by the through metal member 29.

  On the other hand, as shown in FIG. 4B, the penetrating metal member 29 may be formed in a broken line shape in which a cut 24 is provided in a closed circuit surrounding the functional elements 2 and 12 and the circuit forming region thereof. In this case, it is possible to arrange the wiring at the position of the cut 24 of the penetrating metal member 29. For example, a lead-out wiring for connecting the semiconductor device 100 to an external device can be easily provided.

In FIG. 4C, the through metal member 29 is constituted by the first through metal member 29a and the second through metal member 29b. The first penetrating metal member 29a is formed in a broken line shape surrounding the functional elements 2 and 12 and the circuit forming region thereof. Moreover, the 2nd penetration metal member 29b is arrange | positioned in the cut | interruption position of the 1st penetration metal member 29a.
In this example, the circuit formation region in the through metal member 29 and the region outside the through metal member 29 are continuous via the cut 24a in the first through metal member 29a and the cut 24b in the second through metal member 29b. There is a part that is. However, since at least one of the first through metal member 29a and the second through metal member 29b is arranged in a radial direction from the circuit formation region in the through metal member 29, the through metal member 29 is continuous. The effect substantially equivalent to that of FIG.
In addition, the lead-out wiring and the like from the circuit forming region inside the through metal member 29 to the outside region of the through metal member 29 is made through the cut 24a of the first through metal member 29a and the cut 24b of the second through metal member 29b. It is possible to arrange.

  In addition, as shown in FIG. 4D, the penetrating metal member 29 may be formed in a shape with a reduced corner compared to FIG. 4A. Thus, chipping at the time of dicing can be suppressed by making the shape close to the curve by dropping the corner. The penetrating metal member 29 may be formed in a closed curve surrounding the functional elements 2 and 12 and the circuit forming region thereof.

By the way, when a semiconductor device is prototyped or tested, a TEG (test element group) may be formed on the same substrate as the semiconductor device. In such a case, the through metal member 29 can be arranged as shown in FIG. 4E.
In FIG. 4E, the TEG 25 is positioned outside the region surrounded by the penetrating metal member 29 by providing the penetrating metal member 29 along the outer periphery of the TEG 25 at the arrangement position of the TEG 25. When the penetrating metal member 29 is formed in this way, moisture and surrounding atmospheric components that have entered the interface between the first laminate 10 and the second laminate 20 reach the TEG 25 before the penetrating metal member 29. Moisture that reaches the TEG 25 and surrounding atmospheric components cannot be penetrated any further because the TEG 25 becomes an obstacle.
That is, the TEG 25 can be used as a barrier against moisture and surrounding atmospheric components.

1-2. Method for Manufacturing Semiconductor Device Next, a method for manufacturing the semiconductor device 100 according to the present embodiment will be described below with reference to FIGS.
First, as shown in FIG. 5A, a first laminated body 10 in which a functional element 2 is provided on the main surface of the substrate 1 and a second laminated body 20 in which the functional element 12 is provided on the main surface of the substrate 11 are prepared. To do. In the first laminate 10, a seal ring 8 is formed around the functional element 2 when viewed from a direction perpendicular to the main surface of the substrate 1. On the other hand, the substrate penetration member 26 is not formed in the second stacked body 20 at this stage.
The first laminated body 10 and the second laminated body 20 may be manufactured by various known methods, and the method is not particularly limited.

Next, the bonding surface of the first laminated body 10 or the second laminated body 20, here, adhesion of resin or the like to the main surface of the first laminated body 10 on the side where the functional element 2 is provided with respect to the substrate 1. An adhesive is applied to form the adhesive layer 22.
5B, the main surface of the first laminated body 10 on the side on which the adhesive layer 22 is formed and the second laminated body 20 on the side on which the functional element 12 is formed with respect to the substrate 11. The first stacked body 10 and the second stacked body 20 are joined by bonding the main surface.
As a joining method, other methods may be used regardless of the adhesive. For example, when the first laminated body 10 and the second laminated body 20 are brought into direct contact, metal bonding, plasma bonding, glass anodic bonding, or the like can be used.
Further, after bonding, the substrate 11 is ground to a predetermined thickness by a CMP (Chemical Mechanical Polishing) method, BGR (back grinding), or the like.

Next, as shown in FIG. 6A, the via hole 40 reaching the wiring in the first stacked body 10 and the through hole 41 reaching the seal ring 8 are formed by using, for example, dry etching or the like. Then, CVD, or the like, SIO ₂ and SiN, SiON, an insulating film formed by TEOS or the like is formed on the inner wall surface of the via hole 40 and the through-hole 41, to secure the insulating property.
The insulating material deposited on the bottom of the via hole 40 or the through hole 41 is removed by, for example, an electron beam, and then the inside of the via hole 40 and the through hole 41 is filled with a conductive material such as W, Al, or Cu.
Thereby, a via penetrating the substrate 11 and the substrate penetrating member 26 are formed. The substrate penetrating member 26 is integrally connected to the seal ring 8, and the penetrating metal member 29 is configured by the seal ring 8 and the substrate penetrating member 26.
The materials filling the via hole 40 and the through hole 41 may be different materials, but the via and the substrate penetrating member 26 can be formed simultaneously by using the same material.
Moreover, when providing the via which penetrates the interface of the 1st laminated body 10 and the 2nd laminated body 20, the edge part of the via | veer by the side of the 1st laminated body 10, and the board | substrate penetration member by the side of the 1st laminated body 10 If the ends of 26 are on the same wiring layer, the via and the substrate penetrating member 26 are easily formed at the same time.

Then, as shown in FIG. 6B, an insulating film 17 such as SiO ₂ , SiN, SiON, or TEOS is formed on the substrate 11 to ensure insulation of the substrate 11, and then a terminal 21 is formed using Al or the like, for example.
Further, a passivation film 19 made of resin or the like is formed on the insulating film 17 except for the place where the terminals 21 are arranged.
The insulating film 7 provided on the substrate 1 may be formed in advance before the first stacked body 10 is bonded, or may be formed after the bonding, and is not particularly limited.

  Note that functional elements do not need to be formed in both the first stacked body 10 and the second stacked body 20, and only one wiring may be formed in either stacked body.

2. 1st modification (example in which joining surfaces differ)
In the first embodiment, in the two stacked bodies, the main surfaces on the side where the functional elements are formed are bonded to the substrate, but the surfaces to be bonded are not limited thereto.
FIG. 7 is a cross-sectional view showing a schematic configuration of a semiconductor device 200 according to the first modification. Here, parts corresponding to those of the first embodiment (see FIG. 1) are denoted by the same reference numerals, and redundant description is avoided.

The semiconductor device 200 according to this modification includes a first stacked body 10 in which the functional element 2 is formed on the main surface of the substrate 1 and a second stacked body in which the functional element 12 is formed on the main surface of the substrate 11. 20.
In the first stacked body 10, the first wiring layer 5 a to the fourth wiring layer 5 d are formed on the functional element 2 via the planarizing film (insulating film) 6, and the functional element 2 is formed. An insulating film 7 is provided on the main surface of the substrate 1 opposite to the opposite side. A seal ring 8 is provided so as to surround the periphery of the functional element 2 when viewed from a direction perpendicular to the main surface of the substrate 1. The configuration of the first laminate 10 may be the same as that shown in the first embodiment (see FIG. 1).

In the second stacked body 20, wiring layers 15 a to 15 c are formed on the functional element 12 via a planarizing film (insulating film) 16. These configurations may be the same as the configurations shown in the first embodiment.
A seal ring 18 is disposed so as to surround the functional element 12 when viewed from a direction perpendicular to the main surface of the substrate 11. However, in this modification, the seal ring 18 is configured by a substrate penetrating member 26 that penetrates the substrate 11 and the planarization film 16 and wiring in the wiring layer 13. The substrate penetrating member 26 may be made of the same material as that shown in the first embodiment.

  In this modification, the insulating film 17 is formed on the wiring layer 13, and the terminal 21 is formed on the insulating film 17. A passivation film 19 is disposed on the insulating film 17 at a portion other than the portion where the terminal 21 is formed.

Further, in the first stacked body 10, the main surface on the wiring layer 3 side and the main surface on the substrate 11 side of the second stacked body 20 are overlapped and joined at this interface.
The first laminated body 10 and the second laminated body 20 may be joined by providing an adhesive layer 22 such as a resin, or by other methods such as plasma joining, metal joining, glass anodic joining, or the like. May be.

In this modification, the seal ring 8 and the seal ring 18 are connected and integrated, and the through metal member 29 is configured by the seal ring 8 and the seal ring 18. Accordingly, the through metal member 29 penetrates through the interface between the first stacked body 10 and the second stacked body 20 because it penetrates through the interface between the first stacked body 10 and the second stacked body 20. Moisture and surrounding atmospheric components can be blocked. Further, by providing the penetrating metal member 29 around the functional elements 2 and 12, the functional elements 2 and 12 can be protected.
Various patterns shown in the first embodiment (see FIG. 4) may be adopted as the pattern of the penetrating metal member 29.

Thus, in this modification, the joining surface which joins the 1st laminated body 10 and the 2nd laminated body 20 differs from 1st Embodiment. That is, the surface where the first stacked body 10 and the second stacked body 20 are joined can be selected as appropriate.
For example, when a MEMS actuator or the like is used as the functional element 12 arranged in the second stacked body 20, the movable part of the actuator needs to be exposed on the surface of the semiconductor device 200 in order to secure the drive space. Therefore, in such a case, the main surface of the first stacked body 10 on the side where the functional element 12 is not disposed with respect to the substrate 11 can be bonded to the second stacked body 20 as in this modification. preferable.
In that case, a wiring layer is not formed on the actuator, and is disposed, for example, on the first laminate 10 side. For example, a transistor or a diode for driving the actuator can be disposed as the functional element 2 of the first stacked body 10.

In the manufacturing method, for example, the first stacked body 10 is bonded to the second stacked body 20 on which only the substrate 11, the functional element 12, and the planarizing film 16 are formed. Then, a substrate penetrating member 26 that penetrates the planarizing film 16 and the substrate 11 and reaches the seal ring 8 is formed. As a method for forming the substrate penetrating member 26, a method similar to the method shown in the first embodiment can be used.
Thereafter, the semiconductor layer 200 can be manufactured by laminating the wiring layer 13 on the planarizing film 16. Other configurations may be manufactured in the same manner as the method shown in the first embodiment.

3. Second modification (example in which three or more laminates are joined)
Further, the number of laminated bodies to be joined is not limited to two, and a structure in which three or more laminated bodies are joined may be used.
FIG. 8 is a schematic cross-sectional view showing a semiconductor device 300 according to the second modification. Here, parts corresponding to those of the first embodiment (see FIG. 1) are denoted by the same reference numerals, and redundant description is avoided.
The semiconductor device 300 according to this modification includes a first stacked body 10 in which the functional element 2 is provided on the substrate 1, a second stacked body 20 in which the functional element 12 is provided on the substrate 11, and the substrate 31. And the third laminated body 30 provided with the functional elements 32.
These configurations of the first stacked body 10 and the second stacked body 20 may be the same as those shown in the first embodiment, and are not particularly limited.

In the third stacked body 30, the wiring layer 33 is formed on the functional element 32 provided on the substrate 31 through a planarizing film (insulating film) 36.
As the substrate 31, for example, a Si substrate, a glass substrate, or a metal substrate can be used. For the planarizing film 36, for example, SiO ₂ , NSG, PSG, TEOS or the like is used.
Each wiring layer of the first wiring layer 35a to the fourth wiring layer 35d is, for example, a low dielectric constant material such as organic silica glass, an interlayer made of SiO ₂ or the like, similarly to the wiring layer in the first embodiment. An insulating film and an interlayer insulating film made of SiCN or SiN are included.

  These configurations of the third stacked body 30 may be the same as the configurations of the first stacked body 10 and the second stacked body 20, and are not particularly limited. However, in this modification, the insulating film 17, the terminal 21, and the passivation film 19 are disposed on the wiring layer 33 of the third stacked body 30.

  Note that the functional elements need not be formed in all the stacked bodies from the first stacked body 10 to the third stacked body 30, and it is sufficient that the functional elements are formed in at least one stacked body.

  The main surface on the wiring layer 3 side in the first stacked body 10 is superimposed on the main surface on the wiring layer 13 side in the second stacked body 20. And it joins in this overlapped interface. This bonding may be performed through an adhesive layer 22 such as a resin, or may be performed by other methods such as plasma bonding, metal bonding, and glass anodic bonding.

The main surface on the substrate 11 side in the second stacked body 20 is overlapped with the main surface on the substrate 31 side in the third stacked body 30. And it joins in this overlapped interface.
Similarly, this bonding may be performed through an adhesive layer 42 made of resin or the like, or may be performed by other methods such as plasma bonding, metal bonding, and glass anodic bonding.

  In this modification, a substrate penetrating member 26 that penetrates the second stacked body 20, the substrate 31, and the planarization film 36 is provided around the functional element 12. The substrate penetrating member 26 is integrally connected to the seal ring 8 of the first laminate 10 and the seal ring 38 of the third laminate 30. That is, the penetrating metal member 29 is configured by the seal ring 8, the substrate penetrating member 26, and the seal ring 38.

The penetrating metal member 29 according to this modification is provided through the interface between the first laminate 10 and the second laminate 20 and the interface between the second laminate 20 and the third laminate 30. In addition, it is possible to block moisture, ambient atmosphere components, and the like that enter through each interface.
In addition, since the through metal member 29 is provided around the functional elements 2, 12, 32 as viewed from the direction perpendicular to the main surface of the first laminate 10, the functional elements 2, 12, 32 are hydrated. It is possible to protect it from ambient components.

Even when a semiconductor device is configured by joining four or more stacked bodies, moisture and ambient atmosphere components, etc. transmitted through the interfaces can be similarly provided by providing a penetrating metal member that penetrates the interfaces of each stacked body. Can be blocked. Further, in each laminated body, by providing the above-described through metal member around the area to be protected, it is possible to prevent moisture and surrounding atmospheric components from entering the area to be protected.
Further, as the pattern of the penetrating metal member 29 viewed from the direction perpendicular to the main surface of the substrate 1, various patterns shown in the first embodiment (see FIG. 4) may be adopted.

Moreover, in the manufacturing method, for example, the first stacked body 10 and the second stacked body 20 are first bonded. Then, on the second stacked body 20, the substrate 31, the functional element 32, and the planarizing film 36 are formed, and the third stacked body 30 at a stage where the wiring layer 33 is not formed is bonded.
Thereafter, the substrate penetrating member 26 that penetrates the planarizing film 36, the substrate 31, and the second stacked body 20 and reaches the seal ring 8 is formed. The substrate penetrating member 26 can be formed in the same manner as the method shown in the first embodiment.

Then, the semiconductor device 300 can be manufactured by stacking the wiring layer 33, the insulating film 17, and the passivation film 19 on the planarizing film 36 of the third stacked body 30. In the wiring layer 33, the seal ring 18 is formed immediately above the substrate penetrating member 26, and the substrate penetrating member 26 and the seal ring 18 are connected. About another structure, it can manufacture similarly to the method shown in 1st Embodiment (refer FIG.5, 6) and a 1st modification.
Further, it is not particularly limited whether or not the wirings in each stacked body are brought into electrical contact with each other, and a via or the like may be appropriately formed as necessary to have a conductive configuration.

4). 2nd Embodiment (example which comprises a penetration metal member by directly joining seal rings in each layered product)
4-1. Configuration of Semiconductor Device FIG. 9 is a schematic sectional view showing a semiconductor device 400 according to the second embodiment. Here, the example which comprises a penetration metal member by joining directly the wiring of the seal ring in each laminated body without using a substrate penetration member is given. In addition, the same code | symbol is attached | subjected to the location corresponding to 1st Embodiment (refer FIG. 1), and the duplicate description is avoided.

The semiconductor device 400 according to the present embodiment includes a first stacked body 10 in which the functional element 2 and the wiring layer 3 are formed on the substrate 1, and a first stacked body 10 in which the functional element 12 and the wiring layer 13 are formed on the substrate 11. 2 laminates 20.
The basic configuration of the first stacked body 10 and the second stacked body 20 may be the same as that shown in the first embodiment. However, in the present embodiment, the seal ring 18 of the second stacked body 20 is configured by the wiring in the wiring layer 13 and the contact portion that connects each wiring.

In addition, the main surface on the wiring layer 3 side of the first stacked body 10 and the main surface on the wiring layer 13 side of the second stacked body 20 are overlapped and joined. However, the wiring located on the surface of the first laminate 10 in the seal ring 8 and the wiring located on the surface of the second laminate 20 in the seal ring 18 are metal-bonded.
In the present embodiment, the through metal member 29 penetrating the interface between the first laminated body 10 and the second laminated body 20 is configured by metal joining and integrating the seal ring 8 and the seal ring 18. Yes. By providing the penetrating metal member 29, moisture transmitted through the interface between the first laminated body 10 and the second laminated body 20, ambient atmospheric components, and the like can be blocked.
Further, since the through metal member 29 is provided around the functional elements 2 and 12 when viewed from the direction perpendicular to the main surface of the first laminate 10, the functional elements 2 and 12 It can be protected from atmospheric components and the like.

Note that the various patterns shown in the first embodiment (see FIG. 4) may be adopted as the pattern of the through metal member 29 viewed from the direction perpendicular to the main surface of the substrate 1.
Further, the wirings other than the seal ring 8 and the wirings other than the seal ring 18 may be metal-bonded at the same time to connect the circuits disposed in the first stacked body 10 and the second stacked body 20 together. .
Further, an adhesive or the like may be applied in advance to a portion where metal bonding is not performed at the interface between the first stacked body 10 and the second stacked body 20 by, for example, screen printing. However, it is not necessary to apply an adhesive when sufficient bonding strength can be obtained by metal bonding in the seal rings 8 and 18 and other wirings.

4-2. Method for Manufacturing Semiconductor Device Next, a method for manufacturing the semiconductor device 400 of the present embodiment will be described below with reference to FIGS.
First, as shown in FIG. 10A, the first laminated body in which the functional element 2, the wiring layer 3, and the seal ring 8 are formed on the main surface of the substrate 1, and the functional element 12 and the wiring on the main surface of the substrate 11. A second laminate 20 in which the layer 13 and the seal ring 18 are formed is produced.
The manufacturing method of the first stacked body 10 and the second stacked body 20 is not particularly limited, and various known methods may be used.
The insulating film 7 provided on the substrate 1 may be provided in advance on the first stacked body 10 or may be provided after the first stacked body 10 and the second stacked body 20 are joined.

  However, the wiring located on the surfaces of the first stacked body 10 and the second stacked body 20 in the seal rings 8 and 18 such as the wiring 3A and 13A is used as a pad for bonding. Therefore, it is preferable that these wires have a larger outer diameter than the other wires constituting the seal rings 8 and 18. Thereby, joining strength can be raised and the positioning accuracy at the time of joining can also be eased.

Next, as shown in FIG. 10B, the main surface of the first stacked body 10 on the wiring layer 3 side and the main surface of the second stacked body 20 on the wiring layer 13 side are overlapped and joined.
At this time, the seal ring 8 and the seal ring 18 are joined by metal joining, and the seal ring 8 and the seal ring 18 are integrally connected. Thereby, a penetrating metal member penetrating the interface between the first stacked body 10 and the second stacked body 20 is formed.

Moreover, the part which does not perform metal joining is joined by adhesives, such as resin, and plasma joining, for example. In the case of applying an adhesive, for example, pad portions such as wirings 3A and 13A for performing metal bonding are connected to the surfaces of the first stacked body 10 and the second stacked body 20 (the surfaces of the interlayer insulating films 4h and 14f). It is preferable to form the protrusions.
Thereby, a space for applying the adhesive can be secured, and when the first laminated body 10 and the second laminated body 20 are overlapped, the adhesive can be prevented from protruding on the metal joint surface. . For example, screen printing or the like can be used for applying the adhesive.
Further, after bonding, the substrate 11 is ground to a predetermined thickness by a CMP (Chemical Mechanical Polishing) method, BGR (back grinding), or the like.

Next, as illustrated in FIG. 11A, vias 40 a and 40 b that penetrate the substrate 11 and reach the wiring and the like in the first stacked body 10 are formed. The vias 40a and 40b can be formed in the same manner as the method shown in the first embodiment (FIG. 6).
Thereafter, as shown in FIG. 11B, an insulating film 17 such as SiO ₂ , SiN, SiON, or TEOS is formed on the substrate 11 to ensure insulation of the substrate 11, and then a terminal 21 is formed using Al or the like, for example.
Further, a passivation film 19 made of resin or the like is formed on the insulating film 17 except for the place where the terminals 21 are arranged. Thereby, the semiconductor device 400 is completed.

Note that functional elements do not need to be formed in both the first stacked body 10 and the second stacked body 20, and only one wiring may be formed in either stacked body.
In this embodiment mode, a structure in which three or more stacked bodies are stacked may be employed. Further, as the pattern of the penetrating metal member 29 viewed from the direction perpendicular to the main surface of the substrate 1, various patterns shown in the first embodiment (see FIG. 4) may be adopted.

5. Third embodiment (example in which a penetrating metal member is provided separately from the seal ring)
As long as the penetrating metal member according to the present technology penetrates the interface between the first laminated body and the second laminated body, the effect of blocking moisture transmitted through the interface, ambient atmospheric components, and the like can be obtained. Therefore, it is not always necessary to configure the penetrating metal member integrally with the seal ring.

FIG. 12 is a schematic cross-sectional view showing a configuration of a semiconductor device 500 according to the third embodiment. The parts corresponding to those of the first embodiment (see FIG. 1) are denoted by the same reference numerals to avoid redundant explanation.
The semiconductor device 500 of the present embodiment includes a first stacked body 10 in which the functional element 2 and the wiring layer 3 are formed on the substrate 1, and a second stack in which the functional element 12 and the wiring layer 13 are formed on the substrate 11. The laminated body 20 is comprised.

The basic configurations of the first stacked body 10 and the second stacked body 20 may be the same as those shown in the first embodiment (see FIG. 1).
However, in the present embodiment, the interface between the first stacked body 10 and the second stacked body 20 is formed on the inner side of the seal rings 8 and 18 when viewed from the direction perpendicular to the main surface of the first stacked body 10. A penetrating metal member 29 is provided.

The through metal member 29 is formed on the wiring (pad) 3B formed on the wiring layer 5d located on the surface of the first laminated body 10 and on the wiring layer 15c located on the surface of the second laminated body 20. The wiring (pad) 13B is formed by bonding.
The wirings 3B and 13B may be made of the same material as the wirings of the seal rings 8 and 18. For example, W, Al, Cu, Ta, Ti, TiN or the like having high water resistance can be used.

Further, the penetrating metal member 29 is disposed around the functional elements 2 and 12 when viewed from a direction perpendicular to the main surface of the first stacked body 10. The arrangement pattern of the penetrating metal members 29 when viewed from the direction perpendicular to the main surface of the first laminate 10 may be the same as that shown in the first embodiment (see FIG. 4).
The first stacked body 10 and the second stacked body 20 are bonded by bonding the adhesive layer 22 and the wirings 3B and 13B, but plasma bonding or the like may be used instead of the adhesive layer 22.

  Thus, also in the present embodiment, the penetrating metal member 29 penetrating the interface between the first stacked body 10 and the second stacked body 20 is provided. Atmospheric components can be blocked. Further, since the penetrating metal member 29 is disposed around the functional elements 2 and 12 when viewed from the direction perpendicular to the main surface of the first laminate 10, the functional elements 2 and 12 are hydrated. It is possible to protect from ambient atmosphere components.

The first stacked body 10 and the second stacked body 20 are joined by an adhesive layer 22. Therefore, there is no member between the seal ring 8 and the seal ring 18 that prevents moisture and surrounding atmospheric components from entering due to the adhesive layer 22.
However, in the present embodiment, by disposing the penetrating metal member 29, the metal is disposed without a gap when viewed from the side surface of the semiconductor device 500. Therefore, substantially the same effect as that of the second embodiment (see FIG. 9) in which the seal rings 8 and 18 are integrated can be obtained.
In addition, it is possible to obtain a higher effect as the penetrating metal member 29 is arranged closer to the seal rings 8 and 18.

This semiconductor device 500 is different from the second embodiment (FIG. 10) except that the wirings 3B and 13B are formed in the first stacked body 10 and the second stacked body 20, respectively, and the wiring 3B and the wiring 13B are joined. To FIG. 11).
In the case where the adhesive layer 22 is provided, it is preferable that the wirings 3B and 13B are formed so as to protrude from the surfaces of the wiring layers 5d and 15c, respectively, and a space for arranging the adhesive layer 22 is secured.
In addition, as the constituent material of the wirings 3B and 13B, materials other than those described above may be used as long as they are highly resistant to moisture and surrounding atmospheric components. However, if the wiring layer 5d is made of the same material as the other wirings, the wirings 3B and 13B and the other wirings can be formed simultaneously.

Note that functional elements do not need to be formed in both the first stacked body 10 and the second stacked body 20, and only one wiring may be formed in either stacked body.
In this embodiment mode, a structure in which three or more stacked bodies are stacked may be employed.

6). Fourth Embodiment (Example in which a substrate is directly formed on the first laminate)
In the embodiments and modifications so far, the laminates are three-dimensionally arranged by bonding. In the present technology, it is preferable to provide a metal member penetrating the first stacked body and the second stacked body even when the second stacked body is directly stacked on the first stacked body.

FIG. 13 is a schematic cross-sectional view showing the configuration of the semiconductor device 600 according to the present embodiment. The parts corresponding to those of the first embodiment (see FIG. 1) are denoted by the same reference numerals to avoid redundant explanation.
The semiconductor device 600 according to the present embodiment includes a first stacked body 10 in which the functional element 2 and the wiring layer 3 are formed on the substrate 1, and a second stack in which the functional element 12 and the wiring layer 13 are formed on the substrate 11. And the laminate 20.

  The basic configuration of the semiconductor device 600 according to the present embodiment may be the same as that shown in the first modification (see FIG. 7). However, the semiconductor device 600 of this embodiment is formed by sequentially laminating the substrate 11, the functional element 12, the planarizing film 16, the wiring layer 13, and the like on the first stacked body 10. For example, the substrate 11 is directly formed on the first stacked body 10 by vapor deposition such as sputtering.

  Similarly to the first modified example, the penetrating metal member 29 includes a seal ring 18 constituted by the substrate penetrating member 26 penetrating the substrate 11 and the planarizing film 16 and the wiring in the wiring layer 13, the seal ring 8, and the like. It is constituted by.

Thus, in this Embodiment, joining with the 1st laminated body 10 and the 2nd laminated body 20 is not performed. For example, in a semiconductor substrate or the like, an oxide film may be formed on the substrate. Since the oxide film easily permeates moisture, if an oxide film is formed on the substrate 11, moisture may enter through the oxide film.
For this reason, even if bonding is not performed, it is preferable to provide the penetrating metal member 29 penetrating the interface between the first stacked body 10 and the second stacked body 20 and the substrate 11 as in the present embodiment.

A method for manufacturing the semiconductor device 600 according to the present embodiment will be described below.
First, as shown in FIG. 14A, the first stacked body 10 is produced, and the substrate 11 is formed on the wiring layer 3. In the case of forming a Si substrate, for example, sputtering may be used, and in the case of a glass substrate, for example, SOG (Spin On Glass) may be used.
Moreover, about the 1st laminated body 10, it does not specifically limit, You may manufacture by a known various method.
Next, as illustrated in FIG. 14B, the functional element 12 is formed on the substrate 11, and the planarization film 16 is formed on the substrate 11 and the functional element 12.

Thereafter, as shown in FIG. 15A, the substrate penetrating member 26 and the via 43 penetrating the substrate 11 and the planarizing film 16 are formed. These can be formed in the same manner as shown in the first modification (see FIG. 6A). The board penetrating member 26 is connected to the seal ring 8.
Further, a contact portion that connects the functional element 12 and the wiring in the wiring layer 13 is formed in the same manner.
The end portions of the via 43 and the substrate penetrating member 26 on the first stacked body 10 side are located in the same wiring layer in the first stacked body 10. For this reason, the via 43 and the substrate penetrating member 26 can be formed simultaneously.

  Then, the wiring layers 13 are formed by sequentially laminating the wiring layers on the planarizing film 16. The seal ring 18 in the second stacked body 20 includes a substrate penetrating member 26 and wiring of the wiring layer 13 connected to the substrate penetrating member 26. Further, the through metal member 29 is configured by the seal ring 18 and the seal ring 8 in the first laminate 10.

Thereafter, as shown in FIG. 15B, an insulating film 17, a passivation film 19, and a terminal 21 are provided on the wiring layer 13, whereby the semiconductor device 600 is completed.
Note that functional elements do not need to be formed in both the first stacked body 10 and the second stacked body 20, and only one wiring may be formed in either stacked body.
In this embodiment mode, a structure in which three or more stacked bodies are stacked may be employed.
Further, as the pattern of the penetrating metal member 29 viewed from the direction perpendicular to the main surface of the substrate 1, various patterns shown in the first embodiment (see FIG. 4) may be adopted.

7). Fifth embodiment (example of providing a gap penetrating the interface)
Moreover, it is possible to protect a functional element more reliably by providing the space | gap which penetrates the interface of the 1st laminated body 10 and the 2nd laminated body 20 further.
FIG. 16 is a schematic cross-sectional view showing the configuration of the semiconductor device 700 according to the present embodiment. The parts corresponding to those of the first embodiment (see FIG. 1) are denoted by the same reference numerals to avoid redundant explanation.
The basic configuration of the semiconductor device 700 according to the present embodiment is the same as that of the semiconductor device 100 shown in the first embodiment. However, the first embodiment is that a gap 44 is provided that penetrates the interface between the first laminate 10 and the second laminate 20, or one end of which coincides with the interface, and that the pad 5B is provided. The form is different.

The gap 44 is provided around the functional elements 2 and 12 when viewed from the direction perpendicular to the main surface of the first stacked body 10. Here, the gap 44 is formed in a groove shape opened on the surface of the second stacked body 20, and can be formed by, for example, dry etching or wet etching.
The arrangement pattern of the gaps 44 when viewed from the direction perpendicular to the main surface of the first laminate 10 is the same as the pattern of the through metal member shown in the first embodiment (see FIG. 4). It's okay.

  In the present embodiment, the gap 44 reaches the wiring 5A and the pad 5B provided in the wiring layer 5d, and the bottom surfaces of the grooves formed by the gap 44 coincide with the surfaces of the wiring 5A and the pad 5B. As described above, one end of the gap 44 may coincide with the interface between the first stacked body 10 and the second stacked body 20 or may penetrate through the interface.

  For example, when a crack occurs during dicing, the crack may propagate through the interface between the first stacked body 10 and the second stacked body 20. However, in this embodiment, when the crack propagated through the interface reaches the gap 44, the crack 44 releases the stress of the crack. Thereby, it is possible to prevent the crack from progressing to the region where the functional elements 2 and 12 are arranged.

Further, in the present embodiment, one end of the gap 44 and the surfaces of the wiring 5A and the pad 5B in the first stacked body 10 coincide with each other. With such a configuration, the wiring 5A and the pad 5B can be used as an etching stopper when the gap 44 is provided.
Further, the end of the substrate penetrating member 26 and one end of the gap 44 are located in the same wiring layer 5d. For this reason, the through-hole and the space | gap 44 for embedding the board | substrate penetration member 26 can be formed simultaneously.

  Incidentally, the pad 5B is formed by connecting the wirings in the wiring layer 5d among the wirings constituting the seal ring 8. Thereby, the pad 5B can ensure a large surface area. For this reason, the positioning accuracy required when forming the through-hole and the space | gap 44 for embedding the board | substrate penetration member 26 by an etching can be eased.

Note that functional elements do not need to be formed in both the first stacked body 10 and the second stacked body 20, and only one wiring may be formed in either stacked body.
In this embodiment mode, a structure in which three or more stacked bodies are stacked may be employed.
Further, in all of the above-described embodiments and modifications, as in this embodiment, the gap penetrates the interface between the first stacked body 10 and the second stacked body 20, or one end thereof coincides with the interface. It is also possible to provide.

  The embodiments of the semiconductor device and the manufacturing method thereof have been described above. The present technology is not limited to the above-described embodiments, and includes various conceivable forms without departing from the gist of the present technology described in the claims.

Moreover, this technique can also take the following structures.
(1)
A first laminate in which a wiring layer is formed on a substrate;
A second laminate in which the principal surface is disposed on the principal surface of the first laminate, and a wiring layer is formed on the substrate;
A functional element formed on at least one substrate of the first laminate or the second laminate;
The interface between the first laminate and the second laminate is disposed around the functional element when viewed from a direction perpendicular to the main surface of the first laminate and the second laminate. A penetrating metal member penetrating through,
Including a semiconductor device.
(2)
The semiconductor device according to (1), wherein the penetrating metal member includes a substrate penetrating member that penetrates the substrate of the second stacked body.
(3)
The semiconductor device according to (2), wherein the through metal member includes a seal ring provided in the first stacked body.
(4)
The second laminate is provided with a via that penetrates the substrate of the second laminate and the interface between the first laminate and the second laminate, and the end of the substrate penetrating member on the first laminate side is The semiconductor device according to (2) or (3), which is disposed in the same layer as the end portion on the first stacked body side.
(5)
The penetrating metal member comprises one or more laminates that are arranged with the principal surface overlaid on the principal surface of the first laminated body or the second laminated body, and in which a wiring layer is formed on a substrate. The semiconductor device according to any one of (1) to (4), which penetrates all interfaces between the stacked bodies.
(6)
The semiconductor device according to (1), wherein the through metal member is configured by a seal ring provided in the first stacked body and the second stacked body.
(7)
Arranged in at least one of the first stacked body in which the wiring layer is formed on the substrate, the second stacked body in which the wiring layer is formed on the substrate, and the first stacked body or the second stacked body. Forming a functional element,
Bonding the main surface of the first laminate and the main surface of the second laminate;
Seeing from the direction perpendicular to the main surface of the first laminate and the main surface of the second laminate, and penetrating the substrate of the first or second laminate around the functional element, at least Forming a through hole reaching the interface between the first stacked body and the second stacked body, and embedding a metal in the through hole;
A method for manufacturing a semiconductor device.
(8)
A first laminated body in which a wiring layer and a seal ring are formed on a substrate; a second laminated body in which a wiring layer and a seal ring are formed on the substrate; and the first laminated body or the second laminated body. A functional element that is disposed on at least one of the bodies and is provided inside the seal ring as viewed from a direction perpendicular to the main surface of the first stacked body and the second stacked body;
The main surfaces of the first stacked body and the second stacked body are overlapped, and in the stacked main surface, the seal ring disposed in the first stacked body and the second stacked body are disposed. Joining the sealed ring,
A method for manufacturing a semiconductor device.

1, 11, 31 ... substrate, 2, 12, 32 ... functional elements, 3, 3a, 3b, 3c, 5a, 5b, 5c, 5d, 13, 13a, 13b, 13c, 15a, 15b, 15c , 33, 35a, 35b, 35c, 35d ... wiring layer, 3A, 3B, 5A, 13B ... wiring, 4a, 4b, 14a, 14b ... interlayer insulating film, 5B ... pad, 6, 16, 36 ... planarization film, 7, 17 ... insulating film, 8, 8a, 18, 18a, 38 ... seal ring, 10, 10a, 20, 20a, 30 ... laminate, 19 ... Passivation film, 21 ... Terminal, 22, 42 ... Adhesive layer, 23, 23a ... Interface, 24, 24a, 24b ... Cut, 25 ... TEG, 26 ... Substrate Penetration member, 29, 29a, 29b ... Penetration metal member, 40 - a via hole, 40a, 43 ... via, 41 ... through hole, 44 ... gap, 100,110,200,300,400,500,600,700 ... semiconductor device

Claims (8)

A first laminate in which a wiring layer is formed on a substrate;
A second laminate in which the principal surface is disposed on the principal surface of the first laminate, and a wiring layer is formed on the substrate;
A functional element formed on at least one substrate of the first laminate or the second laminate;
The interface between the first laminate and the second laminate is disposed around the functional element when viewed from a direction perpendicular to the main surface of the first laminate and the second laminate. A penetrating metal member penetrating through,
Including a semiconductor device.   The semiconductor device according to claim 1, wherein the penetrating metal member includes a substrate penetrating member that penetrates the substrate of the second stacked body.   The semiconductor device according to claim 2, wherein the through metal member includes a seal ring provided in the first stacked body.   The second laminate is provided with a via that penetrates the substrate of the second laminate and the interface between the first laminate and the second laminate, and the end of the substrate penetrating member on the first laminate side is The semiconductor device according to claim 3, wherein the semiconductor device is disposed in the same layer as an end portion of the via on the first stacked body side.   The penetrating metal member comprises one or more laminates that are arranged with the principal surface overlaid on the principal surface of the first laminated body or the second laminated body, and in which a wiring layer is formed on a substrate. The semiconductor device according to claim 1, which penetrates all interfaces between the stacked bodies.   2. The semiconductor device according to claim 1, wherein the through metal member is configured by a seal ring provided in the first stacked body and the second stacked body. Arranged in at least one of the first stacked body in which the wiring layer is formed on the substrate, the second stacked body in which the wiring layer is formed on the substrate, and the first stacked body or the second stacked body. Forming a functional element,
Bonding the main surface of the first laminate and the main surface of the second laminate;
Seeing from the direction perpendicular to the main surface of the first laminate and the main surface of the second laminate, and penetrating the substrate of the first or second laminate around the functional element, at least Forming a through hole reaching the interface between the first stacked body and the second stacked body, and embedding a metal in the through hole;
A method for manufacturing a semiconductor device. A first laminated body in which a wiring layer and a seal ring are formed on a substrate; a second laminated body in which a wiring layer and a seal ring are formed on the substrate; and the first laminated body or the second laminated body. A functional element that is disposed on at least one of the bodies and is provided inside the seal ring as viewed from a direction perpendicular to the main surface of the first stacked body and the second stacked body;
The main surfaces of the first stacked body and the second stacked body are overlapped, and in the stacked main surface, the seal ring disposed in the first stacked body and the second stacked body are disposed. Joining the sealed ring,
A method for manufacturing a semiconductor device.

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