JP2012182682A - High frequency device and high frequency module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high frequency device and a high frequency module which have high reliability and less insertion loss of a high frequency signal.SOLUTION: A high frequency device 10 comprises: a high frequency module 30 including a module substrate 32 on which a semiconductor element 36 is mounted on a first surface and an antenna substrate 34 provided with an antenna element 38; and a power supply/control circuit board 20. The module substrate 32 has waveguides 321, 351 connected to the semiconductor element 36 near the first surface. The antenna substrate 34 is bonded to the first surface of the module substrate 32 and has waveguides 340, 370 connected to the waveguides 321, 351 and the antenna element 38. The power supply/control circuit board 20 is bonded to a second surface of the module substrate 32 on the opposite side to the first surface. This configuration inhibits noises occurring in one another by separating a part where a high frequency signal flows and a part where a power supply/control signal flows.

Description

  The present invention relates to a high-frequency device and a high-frequency module that transmit and receive a high-frequency signal.

  In recent years, with the development of wireless communication technology, an antenna-integrated high-frequency module including an antenna element on a circuit board has been used in various fields. As an antenna-integrated high-frequency module, an antenna substrate is provided with an antenna element provided on one surface or inside of the substrate and a semiconductor element connected to the antenna element is mounted on the other surface, and a conductor pattern is provided on the surface or inside. Patent Document 1 discloses an antenna module that includes a module substrate that is attached and has an antenna substrate mounted on the surface of the module substrate.

  In addition, from the viewpoint of shortening the process and cost reduction when assembling equipment by mounting the module on the motherboard (power supply / control circuit board), there is a technology to connect the leadless high frequency module to the motherboard with BGA (Ball Grid Array). It is disclosed in Patent Document 2.

  In the high frequency module disclosed in Patent Document 2, a high frequency signal of a high frequency package (or a high frequency module) is transmitted between a semiconductor element and an antenna via a space between BGA solders and a waveguide formed on a motherboard. Input and output. In addition, other signals, grounding, and power supply terminals are connected to the motherboard via the BGA. This structure increases the throughput of the connection process compared to lead connection. Furthermore, the self-alignment of the solder facilitates the alignment of the waveguide and reduces assembly costs.

JP 2006-42006 A JP 2008-252207 A

  However, the technique disclosed in Patent Document 1 has a problem that high-frequency signals and power / control signals are concentrated on the same surface side of the module substrate, so that the high-frequency signals are mixed into the power / control signals as noise. Functional reliability was not high.

  Further, the technique disclosed in Patent Document 2 has a problem that the insertion loss of the high-frequency signal increases because the high-frequency signal passes through the space between the solder balls, which is the connection portion between the high-frequency module and the motherboard. was there.

  Moreover, in order to suppress the loss of the high frequency signal which is converted to the waveguide mode and depends on the thickness of the module substrate, it is conceivable to reduce the thickness of the module substrate. However, when the thickness of the module substrate is reduced, the rigidity of the high-frequency module is lowered as a whole. For this reason, it becomes difficult to satisfy a predetermined rigidity standard for a certain level of quality, and the yield of the high-frequency module itself is lowered. Further, when the thickness of the module substrate is reduced, the warpage of the module substrate is increased, which causes a problem that the yield of mounting on the power supply / control circuit substrate is lowered.

  As described above, in the high-frequency module in which the antenna structure and the power supply / control circuit board input and output the high-frequency signal through the space between the BGA solder balls, the portion passing through the space between the BGA solder balls, There has been a problem that the insertion loss of high-frequency signals becomes large. In addition, there is a problem that the insertion loss of the high frequency signal increases in proportion to the substrate thickness.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a high-frequency device and a high-frequency module that have low insertion loss of high-frequency signals and high reliability.

A high-frequency device according to a first aspect of the present invention includes:
A module substrate on which a semiconductor element for transmitting and receiving a high-frequency signal is mounted on the first surface, and a waveguide connected to the semiconductor element is formed in the vicinity of the first surface;
An antenna that is bonded to the first surface of the module substrate, receives the high-frequency signal from the semiconductor element, and / or transmits the high-frequency signal to the semiconductor element, and is connected to the waveguide and the antenna. An antenna substrate on which a waveguide is formed;
A high-frequency module comprising:
A power supply / control circuit board that is bonded to a second surface opposite to the one surface of the module substrate and controls the high-frequency module;
It is characterized by providing.

The high-frequency module according to the second aspect of the present invention is
A semiconductor element for transmitting and receiving a high-frequency signal is mounted on the first surface, a waveguide connected to the semiconductor element is formed in the vicinity of the first surface, and a power supply / control circuit board is bonded to the second surface on the opposite side of the one surface. Module board
An antenna that is bonded to the first surface of the module substrate, receives the high-frequency signal from the semiconductor element, and / or transmits the high-frequency signal to the semiconductor element, and is connected to the waveguide and the antenna. An antenna substrate on which a waveguide is formed;
It is characterized by providing.

  ADVANTAGE OF THE INVENTION According to this invention, the insertion loss of a high frequency signal is small, and a reliable high frequency apparatus and high frequency module can be provided.

It is sectional drawing which shows the high frequency device which concerns on 1st Embodiment. It is an expanded sectional view which shows the high frequency module with which the antenna was integrated. It is an expanded sectional view which shows the waveguide in a module board | substrate. It is an expanded sectional view which shows the waveguide in a module board | substrate. It is a top view which shows the antenna board | substrate connection surface in a module board | substrate. It is sectional drawing which shows the cap structure part of an antenna board | substrate. It is a top view which shows the antenna board | substrate connection surface in the module board which concerns on a 1st modification. It is an expanded sectional view showing the high frequency module concerning the 2nd modification. It is an expanded sectional view showing the high frequency module concerning the 3rd modification. It is sectional drawing which shows the cap structure part of the antenna board which concerns on a 4th modification. It is sectional drawing which shows the high frequency module which concerns on 2nd Embodiment. It is sectional drawing which shows the cap structure part which consists of an antenna board | substrate and a module board | substrate. It is sectional drawing which shows the cap structure part which consists of an antenna board | substrate and module board concerning a 5th modification.

  Hereinafter, embodiments of a high-frequency device and a high-frequency module according to the present invention will be described in detail with reference to the accompanying drawings.

<First Embodiment>
FIG. 1 shows a cross-sectional view of a high-frequency device 10 according to an embodiment of the present invention. The high-frequency device 10 includes a power supply / control circuit board (motherboard) 20 having a power supply / control circuit, an electronic component 22 used in the power supply / control circuit, and a high-frequency module 30 that transmits and receives high-frequency signals.

  The power / control circuit board 20 stores electric power supplied from an external power supply circuit (not shown), and supplies this electric power to the electronic component 22 provided in the high-frequency device 10 as power supply power. The power supply / control circuit board 20 supplies a control signal such as a switching signal for transmitting and receiving a high-frequency signal to the high-frequency module 30.

A plurality of electronic components 22 are mounted on the lower surface of the power / control circuit board 20 by flip chip connection. The flip chip connection is suitable because the transmission loss of the connection portion can be reduced when the electronic component 22 transmits and receives a millimeter-wave band signal. The material of the bump when the electronic component 22 is flip-chip connected is not limited, but a gold (Au) stud bump or a solder bump is preferably used. Further, the high-frequency module 30 is BGA-connected to a part of the upper surface of the power / control circuit board 20 by a conductive bonding material 320. The electronic component 22 is, for example, a power circuit component, a signal processing IC, a passive element component, or the like, but is not limited thereto. Further, the electronic component 22 may be mounted on the upper surface (the connection surface with the high frequency module 30) of the power supply / control circuit board 20 as shown in FIG. The joining member / method is not limited, but it is preferable to use solder or the like.
Further, a plurality of fixing holes 24 penetrating in the thickness direction for fixing the high-frequency device 10 to other devices or the like with screws are formed on the periphery of the power / control circuit board 20. In addition, the fixing method of the high frequency apparatus 10 is not limited to this fixing method.

  The high-frequency module 30 mainly includes a module substrate 32, an antenna substrate 34, a semiconductor element 36, and an antenna element 38, as shown in an enlarged cross section in FIG. 2.

The module substrate 32 includes an oscillator (not shown) that oscillates a signal for frequency conversion.
A conductive bonding material 320 for bonding to the power / control circuit board 20 is formed on the lower surface (second surface) of the module substrate 32. A semiconductor element mounting portion 326 is formed on the upper surface (first surface) of the module substrate 32. The semiconductor element 36 is bonded and mounted on the semiconductor element mounting portion 326 by a conductive bonding material 360. Furthermore, an antenna substrate 34 made of a dielectric is integrally joined to the upper surface of the module substrate 32. Further, the module substrate 32 is made of conductor wiring (copper wire or the like) in the inner layer near the mounting surface of the semiconductor element 36, and includes one waveguide 321 through which a transmission high-frequency signal passes and five conductors through which a reception high-frequency signal passes. A waveguide 351 is provided. One end of the waveguide 321 faces a waveguide port 324 described later, and the other end is connected to the semiconductor element 36 via the via 325 and the semiconductor element mounting portion 326. One end of each of the five waveguides 351 faces each of five waveguide ports 354 described later, and the other end is connected to the semiconductor element 36 via the via 355 and the semiconductor element mounting portion 326. It has been.

  Further, as shown in an enlarged view in FIG. 3, each of the waveguides 321 and 351 is integrally connected to the semiconductor element mounting portion 326 in the vertical direction by each of the vias 325 and 355. Not limited to this, as shown in FIG. 4, a part of the surface of the module substrate 32 is exposed through the vias 325 and 355 and is integrally connected to the semiconductor element mounting portion 326a in the horizontal direction. The waveguides 321a and 351a may be used.

The waveguides 321 and 351 of the module substrate 32 are preferably coplanar lines from the viewpoint of high-frequency signal propagation and heat dissipation, but are not limited thereto.
Further, as will be described in detail later, a mode conversion unit 323 that converts a mode suitable for the waveguides 340 and 370 or a mode suitable for the waveguides 321 and 351 at one end of the waveguides 321 and 351, respectively. , 353 are provided.

  FIG. 5 shows an example of a pattern on the joint surface between the module substrate 32 and the antenna substrate 34. As shown in FIG. 5, the ground potential solid pattern 329 is provided with the extraction pattern of the waveguide ports 324 and 354, the extraction pattern of the semiconductor element mounting portion 326, and the connection pad 328 of the semiconductor element 36. .

  The semiconductor element 36 performs high-frequency signal amplification, modulation / demodulation, filtering, frequency conversion, and the like. Although the high-frequency module 30 according to the present embodiment is described as including only one semiconductor element 36, a plurality of high-frequency modules 30 may be provided.

On the lower surface of the antenna substrate 34, one transmission waveguide port 324 and five reception waveguide ports 354 are provided. A single waveguide 340 made of a hollow tube covered with a conductor is formed on the antenna substrate 34 with the transmission waveguide port 324 as an open end. In addition, five waveguides 370 made of hollow tubes covered with conductors are formed on the antenna substrate 34 with the reception waveguide port 354 as an open end. On the upper surface of the antenna substrate 34, six antenna elements 38 are integrally mounted so as to be connected to the other open ends of the waveguides 340 and 370, respectively. The antenna element 38 is a planar antenna composed of a waveguide and a slot array having a dielectric film as a base and a metal film formed in a hole provided in the dielectric film.
Further, a cap component (concave portion) 342 is formed in a portion of the antenna substrate 34 facing the semiconductor element 36. The cap component 342 of the antenna substrate 34 covers (accommodates) the semiconductor element 36 mounted on the module substrate 32 and functions as an electromagnetic shield.

  Next, a cross-sectional view of the cap component 342 of the antenna substrate 34 is shown in FIG. The cap constituent portion 342 is formed so as to be recessed upward from the lower surface of the antenna substrate 34 and cover the semiconductor element 36. The cap component 342 is characterized in that a conductor 344 is formed on the surface thereof. Thus, by forming the conductor 344 in the cap constituent portion 342, the effect of electromagnetic shielding between the semiconductor element 36 and the electronic component 22 outside thereof can be enhanced.

  Next, the operation of the high frequency module 30 configured as described above will be described. The high-frequency signal output from the semiconductor element 36 to the antenna element 38 propagates on the waveguide 321 on the inner layer near the mounting surface on the mounting surface of the semiconductor element 36 or via the via 325, and the mode is converted by the mode conversion unit 323. The The converted high-frequency signal is propagated to the antenna element 38 via the transmission waveguide port 324 and the waveguide 340 formed on the antenna substrate 34.

  Conversely, the high-frequency signal output from the antenna element 38 to the semiconductor element 36 propagates into the module substrate 32 via the waveguide 370 and the reception waveguide port 354 formed on the antenna substrate 34, and the mode The mode is converted by the conversion unit 353. The converted high-frequency signal is input to the semiconductor element 36 through the waveguide 351 and the via 355.

  The high-frequency signal input / output to / from the semiconductor element 36 is a mode adapted to the waveguides 340 and 370 or the waveguides 321 and 351 by the mode converters 323 and 353 in the waveguides 321 and 351 provided on the module substrate 32. Is converted to a mode suitable for. For this reason, the high-frequency signal of the high-frequency device 10 is different from the conventional one in that it is less dependent on the thickness of the power / control circuit board 20 and does not pass through the space between the BGAs (conductive bonding material 320). That is, the high-frequency signal is input / output between the antenna element 38 and the semiconductor element 36 through the waveguides 340 and 370 and the waveguides 321 and 351 at a short distance. For this reason, the insertion loss of a high frequency signal is suppressed.

  In this way, high-frequency signals are input / output only within the high-frequency module 30, and are not input / output to the power / control circuit board 20. Therefore, the high-frequency module 30 does not correlate the high-frequency signal with the power / control signal (no noise is generated), and has excellent EMI resistance.

Further, the module substrate 32 and the antenna substrate 34 are a printed circuit board, a liquid crystal polymer (LCP) circuit board, or a low-temperature co-fired ceramic (LTCC) mainly composed of polyphenylene ether (PPE) which is a material having a small dielectric loss in a high-frequency signal. What is formed with a board | substrate etc. is desirable. In particular, a printed circuit board mainly composed of PPE is suitable from the viewpoint of reliability of secondary mounting connection to a mother board made of the printed circuit board and cost. However, the module substrate 32 and the antenna substrate 34 may be formed of an organic substrate, a ceramic substrate, or the like. Thus, by using the module substrate 32 and the antenna substrate 34 formed of a low-loss dielectric such as an organic substrate or a ceramic substrate, the loss of high-frequency signals can be reduced. Therefore, an organic substrate or a ceramic substrate is preferable in consideration only of suppressing the loss of high-frequency signals. In consideration of the cost, the printed circuit board mainly composed of PPE is suitable.
Further, the connection method between the antenna substrate 34 and the module substrate 32 may be connected with a conductive adhesive, solder, or the like, and is not limited thereto.

  The high frequency module 30 configured as described above is BGA connected to the power supply / control circuit board 20, whereby the high frequency device 10 is manufactured at low cost.

  Further, the high frequency module 30 is integrally provided with an antenna element 38. For this reason, in the high-frequency device 10, as shown in FIG. 1, the electronic component 22 is placed on the surface opposite to the mounting surface of the high-frequency module 30 in the power / control circuit board 20, and the surface to which the antenna is conventionally joined. It can be mounted and the device can be downsized.

  Waveguides 340 and 370 are formed at the interface between the antenna element 38 and the module substrate 32. In this manner, in the manufacturing process of the high-frequency module 30, the operation can be easily confirmed by bringing the antenna element 38 into contact with the waveguides 340 and 370 before joining to the antenna substrate 34. . Therefore, by connecting an inspected antenna, the high-frequency module 30 in which the antenna element 38 is integrally formed can be manufactured with a high yield.

<First Modification>
As shown in FIG. 7, the pattern of the joint surface of the module substrate 33 according to the first modification with the antenna substrate 34 is such that a dot pattern 330 is formed instead of the solid pattern 329 shown in FIG. It is. It is sufficient that at least the waveguide ports 324 and 354 and the connection pads 328 are formed in the pattern, and the pattern is not limited to the example shown in FIG. 5 and the first modified example shown in FIG. As shown in FIGS. 5 and 7, it has been described that there is one transmission waveguide port 324 (transmission 1 channel) and five reception waveguide ports 354 (reception 5 channels). The configuration of the present invention does not limit the number of channels.

<Second Modification>
As shown in FIG. 8, the high-frequency module 40 according to the second modification includes a module substrate 400 made of a film substrate. The module substrate 400 can be a film substrate because the module substrate 400 is sufficiently bonded to the antenna substrate 34 to be sufficiently rigid. Since the high-frequency module 40 according to the second modification includes the module substrate 400 that is a film substrate, the high-frequency module 40 and the high-frequency device 10 including the same can be made compact.

  The material of the module substrate 400 may be the same as the material of the module substrate 32 and the antenna substrate 34, and is not limited thereto. For example, the material of the module substrate 400 is preferably polyimide.

<Third Modification>
Further, the antenna element 38 has been described as a planar antenna including a waveguide and a slot array, in which a dielectric is a base and a metal film is formed inside a hole provided in the dielectric. However, the present invention is not limited to this. Not. For example, the high frequency module according to the present invention may be a high frequency module 42 including a horn antenna 428 as shown in FIG. Further, a structure in which an antenna made of metal is connected to the waveguides 340 and 370 of the antenna substrate 34 may be used.

<Fourth Modification>
Moreover, although the cap structure part 342 demonstrated that the surface was covered with the conductor 344, it is not limited to this. For example, as shown in FIG. 10, the surface of the cap component 342 may be covered with a radio wave absorber 346. The radio wave absorber 346 is made of, for example, a sheet metal, a metal mesh, or synthetic rubber, but is not limited thereto as long as it has an electromagnetic shielding effect. By forming the radio wave absorber 346, the effect of electromagnetic shielding of the cap structure portion 342 is enhanced as in the example in which the conductor 344 is formed. In this way, by covering the surface of the cap component 342 with a desired material (the above-described conductor 344 or radio wave absorber 346 or the like), the electromagnetic peripheral environment of the semiconductor element 36 is not dependent on the material of the antenna substrate 34. Can be adjusted.

Second Embodiment
FIG. 11 is a cross-sectional view showing a high-frequency module 50 of the high-frequency device 10 according to another embodiment of the present invention. Unlike the high-frequency module 30 according to the first embodiment, the high-frequency module 50 according to the present embodiment includes a cavity (cap component) 522 formed on the upper surface side of the module substrate 52 (the surface side joined to the antenna substrate 54). The semiconductor element 36 is accommodated and mounted in the cavity 522. Further, the module substrate 52 includes waveguides 520 and 550 disposed substantially parallel to the mounting surface of the semiconductor device 36 below the semiconductor element mounting portion 326. One end portion of each of the waveguides 520 and 550 is opposed to each of the waveguide ports 324 and 354, and mode conversion portions 323 and 353 are provided in the vicinity thereof, and the other end portion is each of the vias 325 and 355. The semiconductor element 36 is connected to the semiconductor element 36 via the semiconductor element mounting portion 326.

Further, the module substrate 52 has six slots 525 between one end of the waveguides 520 and 550 and the waveguide ports 324 and 354, and limits the propagation of high-frequency signals other than the slots 525 ( A conductor plate (propagation limiting portion) 524 to be shielded is provided. The six slots 525 are formed in the conductor plate 524 by the number corresponding to the positions facing the one transmission waveguide port 324 and the five reception waveguide ports 354 (six in the present embodiment). ing. The slots 525 and the waveguide ports 324 and 354 need only be formed in a number corresponding to the corresponding position, and the number is arbitrary.
Further, the antenna substrate 54 made of a dielectric is not formed with the concave portion 342 for configuring the cap described with reference to FIGS. 6 and 10. The other main configuration of the high-frequency module 50 is the same as the configuration of the high-frequency module 30 according to the first embodiment.

  In the high-frequency module 50 according to the present embodiment, the semiconductor element 36 is accommodated and mounted on the module substrate 52 side, so that the waveguides 520 and 550 formed on the lower side of the semiconductor element 36 are provided on the antenna substrate 54. The formed waveguides 340 and 370 are separated from the waveguide ports 324 and 354. Even in such a case, the high-frequency signal propagates substantially linearly from the mode conversion unit 323 to the transmission waveguide port 324 via the slot 525. Similarly, the high-frequency signal propagates substantially linearly from the reception waveguide port 354 to the mode conversion unit 353 via the slot 525. Thus, by providing the conductor plate 524 having the slot 525, only high-frequency signals suitable for transmission and reception pass between the waveguides 340 and 370 and the waveguides 520 and 550, thereby suppressing the generation of noise. be able to.

  As shown in this embodiment, the conductor plate 524 is preferably provided in the high-frequency module 50 in which the cavity 522 for housing the semiconductor element 36 is formed in the module substrate 52. However, the present invention is not limited thereto, and the module substrate 52 as in Embodiment 1 may be provided with a cavity 522 that accommodates the semiconductor element 36. Even in such a case, if the waveguides 520 and 550 are separated from the waveguides 340 and 370, the conductor plate 524 functions particularly effectively for suppressing the generation of noise.

  In addition, the high-frequency module 50 according to the present embodiment can achieve the same effects as the high-frequency module 30 according to the first embodiment that it has low loss and can be manufactured at low cost. Furthermore, the high-frequency module 50 according to the present embodiment is manufactured at a low cost because the structure of the antenna substrate 54 becomes simple.

  Since the module substrate 32 requires the formation of the cavity 522, a ceramic substrate having a relatively small cost difference depending on the presence or absence of the cavity 522 is suitable, but the present invention is not limited to this. Further, since the semiconductor element 36 is capped on the lower surface of the antenna substrate 54 positioned above, the high-frequency module 50 has excellent EMI resistance like the high-frequency module 30 according to the first embodiment.

  Next, as shown in FIG. 12, the cap component of the high-frequency module 50 according to this embodiment includes a cavity 522 of the module substrate 52 and an antenna substrate 54. A conductor 544 is formed on the lower surface of the antenna substrate 54 facing the semiconductor element 36 so as to cover the open end of the cavity 522. As described above, since the conductor 544 is formed in the cap component, the effect of electromagnetic shielding on the semiconductor element 36 is enhanced.

<Fifth Modification>
Further, the lower surface of the antenna substrate 54 facing the semiconductor element 36 has been described as being covered with the conductor 544, but is not limited thereto. For example, as shown in FIG. 13, a radio wave absorber 546 may be formed on the lower surface of the antenna substrate 54 facing the semiconductor element 36 so as to cover the open end of the cavity 522. The radio wave absorber 546 is made of, for example, a sheet metal, a metal mesh, or synthetic rubber, but is not limited thereto as long as it has an electromagnetic shielding effect. By forming the radio wave absorber 546, the effect of electromagnetic shielding as a cap can be enhanced. In this way, by covering the lower surface of the antenna substrate 54 facing the semiconductor element 36 with a desired material (the above-mentioned conductor 544 or the radio wave absorber 546), the electromagnetic peripheral environment of the semiconductor element 36 is changed to the antenna substrate 54. It can be adjusted regardless of the material.

  In the above embodiment, various modifications may be made without departing from the scope and broad scope of the present invention. That is, the above embodiment is intended to explain the present invention, and does not limit the scope of the present invention.

  For example, FIG. 1, FIG. 2, FIG. 8, FIG. 9 and FIG. 11 show bumps for BGA connection made of the conductive bonding material 320, but the bumps may be omitted. , 52 may be supplied to the power / control circuit board 20 side. Further, the module substrates 32, 400, and 52 may have a configuration in which solder resists are stacked.

  In addition, the method for connecting the electronic component 22 and the semiconductor element 36 is not limited to flip-chip connection as in the above embodiment, and wire bonding connection or the like may be used. Further, the type, size and number of electronic components 22 and semiconductor elements 36, and the size and pitch of solder bumps are not limited.

  Further, an underfill resin of a desired material may be used for sealing the semiconductor element 36 and the electronic component 22. If an underfill resin is used, it is preferable to use a resin having a small difference in thermal expansion from the semiconductor element 36 and the electronic component 22. Further, even when the input / output terminal pitch of the semiconductor element 36 or the electronic component 22 is miniaturized to, for example, 150 μm or less and the space between the bumps is small, the underfill resin generates voids (pores). Need to be fully filled. Further, it is necessary that the inorganic filler constituting the underfill resin does not damage the semiconductor element 36 and the electronic component 22. From these viewpoints, a material composed of a composite of an inorganic filler and an organic resin is suitable for the underfill resin. In particular, the underfill resin is suitably a composite composed of 40-60 wt% inorganic filler having a maximum particle size of 5 μm or less and an organic resin.

  The electrode materials of the module substrates 32, 400, and 52 are not limited, but copper (Cu) is suitable for organic substrates, and silver-palladium (Ag-Pd) for low-temperature co-fired ceramic (LTCC) substrates. Alloys are preferred. Also, the surface treatment of the electrode is not limited, but gold (Au) plating treatment using a nickel (Ni) plating barrier as a base is suitable for connection of the electronic component 22.

  As described above, in the high-frequency module according to the present invention, the antenna substrate including the antenna and the module substrate including the semiconductor element are joined. For this reason, in the high frequency module according to the present invention, there is no extra substrate (for example, a power supply / control circuit substrate in the prior art) between the antenna and the semiconductor element as in the prior art, and the high frequency signal passes through the space between the BGAs. There is nothing. Therefore, it is possible to suppress insertion loss of a high-frequency signal transmitted and received between the antenna and the semiconductor element, and to improve the reliability of the high-frequency signal. Further, since there is no extra substrate between the antenna and the semiconductor element as in the prior art, it is not necessary to form a waveguide on this substrate, and the manufacturing cost can be reduced.

  In the high-frequency device according to the present invention, the semiconductor element is mounted on the first surface side of the module substrate, the antenna substrate is bonded, and the power / control circuit substrate is bonded on the second surface side. Therefore, it is possible to suppress interference between an electric signal transmitted / received between the power / control circuit board and the module board and a high-frequency signal transmitted / received between the antenna and the semiconductor element via the waveguide and the waveguide. . In addition, unlike the conventional high-frequency device according to the present invention, the antenna substrate is not bonded to the surface opposite to the module substrate mounting surface of the power / control circuit substrate, and is a configuration suitable for downsizing.

  Further, since the semiconductor element is surrounded by the antenna substrate and the module substrate, generation of mutual noise between the high-frequency signal and the electric signal flowing outside is suppressed.

  Further, since the recess for accommodating the semiconductor element is formed in the antenna substrate, it is not necessary to form a cavity in the module substrate. By doing in this way, the structure of a module board can be simplified and a high frequency module can be manufactured at low cost.

  Further, since the cavity for housing the semiconductor element is formed in the module substrate, it is not necessary to form a recess in the antenna substrate. By doing so, the structure of the antenna substrate can be simplified, and the high-frequency module can be manufactured at low cost.

  In addition, it is possible to enhance the electromagnetic shielding effect between the semiconductor element and the external electronic component by making at least a part of the part surrounding the semiconductor element in the antenna substrate and the module substrate covered with the conductor. it can.

  Further, at least a part of the portion surrounding the semiconductor element in the antenna substrate and the module substrate is covered with a radio wave absorber, thereby enhancing the electromagnetic shielding effect between the semiconductor element and the electronic component outside the semiconductor element. be able to.

  Since the module substrate and the antenna substrate are joined and have high rigidity as a whole, the module substrate can be a film substrate, and the high-frequency module and the high-frequency device including the same can be made compact.

  By forming the antenna substrate and / or the module substrate with an organic substrate, the high-frequency module substrate can be manufactured at a low cost.

  Moreover, although a part or all of said embodiment can be described also as the following additional remarks, it is not restricted to the following.

(Appendix 1)
A module substrate on which a semiconductor element for transmitting and receiving a high-frequency signal is mounted on the first surface, and a waveguide connected to the semiconductor element is formed in the vicinity of the first surface;
An antenna that is bonded to the first surface of the module substrate, receives the high-frequency signal from the semiconductor element, and / or transmits the high-frequency signal to the semiconductor element, and is connected to the waveguide and the antenna. An antenna substrate on which a waveguide is formed;
A high-frequency module comprising:
A power supply / control circuit board that is bonded to a second surface opposite to the one surface of the module substrate and controls the high-frequency module;
Comprising
A high-frequency device characterized by that.

(Appendix 2)
The high-frequency device according to appendix 1, wherein the semiconductor element is surrounded by the antenna substrate and the module substrate.

(Appendix 3)
The high frequency device according to appendix 2, wherein the antenna substrate is formed with a recess for accommodating the semiconductor element.

(Appendix 4)
The high frequency device according to appendix 2, wherein a cavity for housing the semiconductor element is formed in the module substrate.

(Appendix 5)
The module board has a slot for passing the high-frequency signal at a position facing the port of the waveguide, and includes a propagation restriction unit that restricts the propagation of the high-frequency signal except for the slot. 5. The high frequency device according to any one of 4 to 4.

(Appendix 6)
6. The high-frequency device according to any one of appendices 2 to 5, wherein at least a part of a portion surrounding the semiconductor element in the antenna substrate and the module substrate is covered with a conductor.

(Appendix 7)
6. The high frequency device according to any one of appendices 2 to 5, wherein at least a part of a portion surrounding the semiconductor element in the antenna substrate and the module substrate is covered with a radio wave absorber.

(Appendix 8)
The high-frequency device according to any one of appendices 1 to 7, wherein the module substrate is a film substrate.

(Appendix 9)
9. The high-frequency device according to any one of appendices 1 to 8, wherein the antenna substrate and / or the module substrate is formed of an organic substrate.

(Appendix 10)
A semiconductor element for transmitting and receiving a high-frequency signal is mounted on the first surface, a waveguide connected to the semiconductor element is formed in the vicinity of the first surface, and a power supply / control circuit board is bonded to the second surface on the opposite side of the one surface. Module board
An antenna that is bonded to the first surface of the module substrate, receives the high-frequency signal from the semiconductor element, and / or transmits the high-frequency signal to the semiconductor element, and is connected to the waveguide and the antenna. An antenna substrate on which a waveguide is formed;
Comprising
A high-frequency module characterized by that.

10 High-frequency equipment 20 Power supply / control circuit board (motherboard)
22 Electronic component 30, 40, 42, 50 High frequency module 32, 400, 52 Module substrate 321, 321a, 351, 351a, 520, 550 Waveguide 324 Transmission waveguide port 325, 355 Via 34, 54 Antenna substrate 340, 370 Waveguide 342 Cap component (concave)
344, 544 Conductor 346, 546 Electromagnetic absorber 354 Receiving waveguide port 36 Semiconductor element 38 Antenna element 428 Horn antenna 522 Cap component (cavity)
524 Conductor plate (Propagation limiting part)

Claims (10)

A module substrate on which a semiconductor element for transmitting and receiving a high-frequency signal is mounted on the first surface, and a waveguide connected to the semiconductor element is formed in the vicinity of the first surface;
An antenna that is bonded to the first surface of the module substrate, receives the high-frequency signal from the semiconductor element, and / or transmits the high-frequency signal to the semiconductor element, and is connected to the waveguide and the antenna. An antenna substrate on which a waveguide is formed;
A high-frequency module comprising:
A power supply / control circuit board that is bonded to a second surface opposite to the one surface of the module substrate and controls the high-frequency module;
Comprising
A high-frequency device characterized by that.   The high-frequency device according to claim 1, wherein the semiconductor element is surrounded by the antenna substrate and the module substrate.   The high-frequency device according to claim 2, wherein the antenna substrate is formed with a recess that accommodates the semiconductor element.   The high-frequency device according to claim 2, wherein a cavity for housing the semiconductor element is formed in the module substrate.   2. The module board according to claim 1, further comprising: a propagation restriction unit that has a slot through which the high-frequency signal is passed at a position facing the port of the waveguide and restricts the propagation of the high-frequency signal at a position other than the slot. The high frequency device according to any one of 1 to 4.   6. The high-frequency device according to claim 2, wherein at least a part of a portion surrounding the semiconductor element in the antenna substrate and the module substrate is covered with a conductor.   6. The high-frequency device according to claim 2, wherein at least a part of a portion surrounding the semiconductor element in the antenna substrate and the module substrate is covered with a radio wave absorber.   The high-frequency device according to claim 1, wherein the module substrate is a film substrate.   The high-frequency device according to claim 1, wherein the antenna substrate and / or the module substrate is formed of an organic substrate. A semiconductor element for transmitting and receiving a high-frequency signal is mounted on the first surface, a waveguide connected to the semiconductor element is formed in the vicinity of the first surface, and a power supply / control circuit board is bonded to the second surface on the opposite side of the one surface. Module board
An antenna that is bonded to the first surface of the module substrate, receives the high-frequency signal from the semiconductor element, and / or transmits the high-frequency signal to the semiconductor element, and is connected to the waveguide and the antenna. An antenna substrate on which a waveguide is formed;
Comprising
A high-frequency module characterized by that.

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