[go: up one dir, main page]

JP2012182357A - Lead frame substrate for led light emitting element, led light emitting element device, and lead frame for the led light emitting element - Google Patents

Lead frame substrate for led light emitting element, led light emitting element device, and lead frame for the led light emitting element Download PDF

Info

Publication number
JP2012182357A
JP2012182357A JP2011045036A JP2011045036A JP2012182357A JP 2012182357 A JP2012182357 A JP 2012182357A JP 2011045036 A JP2011045036 A JP 2011045036A JP 2011045036 A JP2011045036 A JP 2011045036A JP 2012182357 A JP2012182357 A JP 2012182357A
Authority
JP
Japan
Prior art keywords
led light
emitting element
light emitting
lead frame
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011045036A
Other languages
Japanese (ja)
Inventor
Takayuki Fukada
隆之 深田
Susumu Maniwa
進 馬庭
Junko Toda
順子 戸田
Ryuji Ueda
龍二 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP2011045036A priority Critical patent/JP2012182357A/en
Publication of JP2012182357A publication Critical patent/JP2012182357A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Led Device Packages (AREA)

Abstract

【課題】リードフレームと樹脂成形体の密着性を高める。
【解決手段】リードフレーム基板10は、凹部12を有した樹脂成形体11と、凹部12の底部に露出したパッド部13およびリード部14とを有し、パッド部13およびリード部14は、プレート状の導電性金属材料を所定形状にエッチングすることにより形成したリードフレーム50に設けた。リードフレーム50は、凹部12の底部開口12bよりも大きな寸法を有し、凹部12の底部開口12bの外周側において樹脂成形体11と接する領域Sに、高さ20〜30μmの凹凸51を形成した。
【選択図】図2
To improve adhesion between a lead frame and a resin molded body.
A lead frame substrate (10) includes a resin molded body (11) having a concave portion (12), a pad portion (13) and a lead portion (14) exposed at the bottom of the concave portion (12). The lead frame 50 was formed by etching a conductive metal material into a predetermined shape. The lead frame 50 has a size larger than that of the bottom opening 12b of the recess 12, and an uneven portion 51 having a height of 20 to 30 μm is formed in a region S in contact with the resin molded body 11 on the outer peripheral side of the bottom opening 12b of the recess 12. .
[Selection] Figure 2

Description

本発明は、LED発光素子用リードフレーム基板、LED発光素子装置、およびLED発光素子用リードフレームに関する。   The present invention relates to an LED light-emitting element lead frame substrate, an LED light-emitting element device, and an LED light-emitting element lead frame.

LED発光素子装置として、LED発光素子用リードフレーム基板(以下、単に「リードフレーム基板」と称する。)にLED発光素子を搭載したものがある(例えば特許文献1参照)。このようなリードフレーム基板は、樹脂成形体に凹部が形成され、この凹部の底部に、LED発光素子を搭載するパッド部と、LED発光素子と電気的に接続するためのリード部とが設けられている。
パッド部に搭載されたLED発光素子は、ワイヤー等によりリード部に電気的に接続されている。そして、凹部内に、透過性を有するとともに蛍光体を含有した樹脂(以下、これを封止樹脂と称する)を充填し、LED発光素子を封止するとともに、LED発光素子から発せられる光を外部に透過させるようになっている。
As an LED light emitting device, there is one in which an LED light emitting device is mounted on a lead frame substrate for LED light emitting device (hereinafter simply referred to as “lead frame substrate”) (see, for example, Patent Document 1). In such a lead frame substrate, a concave portion is formed in the resin molded body, and a pad portion for mounting the LED light emitting element and a lead portion for electrically connecting the LED light emitting element are provided at the bottom of the concave portion. ing.
The LED light emitting element mounted on the pad portion is electrically connected to the lead portion by a wire or the like. The concave portion is filled with a resin having transparency and containing a phosphor (hereinafter referred to as a sealing resin) to seal the LED light emitting element and to transmit light emitted from the LED light emitting element to the outside. It is designed to be transparent.

特開2004−172160号公報JP 2004-172160 A

しかしながら、パッド部およびリード部は、銅等の導電性材料で形成されており、異材料からなる樹脂成形体との密着性が悪いという問題がある。
特に、パッド部およびリード部がプレート状をなした導電性材料から一体的に形成されたLED発光素子用リードフレーム(以下、単に「リードフレーム」と称する。)である場合、その一面側に樹脂成形体が形成されるため、その問題は顕著である。
However, the pad portion and the lead portion are formed of a conductive material such as copper, and there is a problem that the adhesion with a resin molded body made of a different material is poor.
In particular, in the case where the pad portion and the lead portion are LED light emitting element lead frames (hereinafter simply referred to as “lead frames”) integrally formed from a plate-like conductive material, a resin is provided on one side thereof. Since a molded body is formed, the problem is remarkable.

本発明は、上記事情に鑑みてなされたものであり、リードフレームと樹脂成形体の密着性を高めることのできるLED発光素子用リードフレーム基板、LED発光素子装置、およびLED発光素子用リードフレームを提供することを目的とする。   The present invention has been made in view of the above circumstances, and includes a lead frame substrate for an LED light emitting element, an LED light emitting element device, and a lead frame for an LED light emitting element capable of improving the adhesion between a lead frame and a resin molded body. The purpose is to provide.

本発明は、上記課題を解決するため、以下の手段を採用する。
本発明の第一の態様であるLED発光素子用リードフレーム基板は、第1の面に1以上の凹部を有した樹脂成形体と、凹部の底面に設けられ、少なくとも1つのLED発光素子を搭載するためのパッド部、およびLED発光素子と電気的に接続するためのリード部を有したリードフレームとを備え、リードフレームは、凹部の底部開口よりも大きく、かつ凹部の底部開口の外周側において樹脂成形体との界面に、凹凸が形成されていることを特徴とする。
リードフレームにおいて、凹部の底部開口の外周側において樹脂成形体との界面に、凹凸を形成することで、リードフレームと樹脂成形体との密着性を高めることができる。
このような凹凸は、ハーフエッチングにより形成するのが好ましい。これにより、凹凸を、20〜30μmの段差を有したものとすることができる。
The present invention employs the following means in order to solve the above problems.
A lead frame substrate for an LED light emitting element according to a first aspect of the present invention is provided with a resin molded body having one or more recesses on a first surface and at least one LED light emitting element provided on the bottom surface of the recesses. And a lead frame having a lead part for electrical connection with the LED light emitting element, the lead frame being larger than the bottom opening of the recess and on the outer peripheral side of the bottom opening of the recess Unevenness is formed at the interface with the resin molded body.
In the lead frame, by forming irregularities at the interface with the resin molded body on the outer peripheral side of the bottom opening of the recess, the adhesion between the lead frame and the resin molded body can be enhanced.
Such irregularities are preferably formed by half etching. Thereby, an unevenness | corrugation can have a level | step difference of 20-30 micrometers.

本発明の第二の態様であるLED発光素子装置は、本発明のリードフレーム基板と、凹部内に収容され、パッド部に搭載されたLED発光素子と、LED発光素子とリード部とを電気的に接続するワイヤーと、凹部内に充填され、透明性を有した封止樹脂とを備えることを特徴とする。   An LED light-emitting element device according to a second aspect of the present invention electrically connects a lead frame substrate of the present invention, an LED light-emitting element housed in a recess and mounted on a pad portion, and the LED light-emitting element and the lead portion. And a sealing resin filled in the recess and having transparency.

本発明の第三の態様であるLED発光素子用リードフレームは、少なくとも1つのLED発光素子を搭載するためのパッド部と、LED発光素子と電気的に接続するためのリード部と、平面視においてパッド部およびリード部を囲むように形成され、樹脂成形体と接合される接合領域部と、を有し、接合領域部に、ハーフエッチングにより形成され、樹脂成形体との接合強度を高めるための凹凸が形成されていることを特徴とする。   A lead frame for an LED light emitting element according to a third aspect of the present invention includes a pad portion for mounting at least one LED light emitting element, a lead portion for electrically connecting the LED light emitting element, and a plan view. A bonding region portion formed so as to surround the pad portion and the lead portion and bonded to the resin molded body, and formed in the bonding region portion by half etching to increase the bonding strength with the resin molded body. Unevenness is formed.

本発明によれば、リードフレームと樹脂成形体との密着性を高めることができる。   According to the present invention, the adhesion between the lead frame and the resin molded body can be enhanced.

本実施形態に係るリードフレーム基板の全体構成を示す図である。It is a figure which shows the whole structure of the lead frame board | substrate which concerns on this embodiment. 各凹部の断面図である。It is sectional drawing of each recessed part. 金属材料のエッチング工程を示す図である。It is a figure which shows the etching process of a metal material.

以下、添付図面を参照して、本発明によるLED発光素子用リードフレーム基板、LED発光素子装置、およびLED発光素子用リードフレームの一実施形態について説明する。
図1は、リードフレーム基板10の全体構成を示す図である。
図1に示すように、リードフレーム基板10は、後述するパッド部13およびリード部14が複数組形成されたリードフレーム50と、リードフレーム50に形成され、マトリックス状に配置された複数の凹部12を有する樹脂成形体11とを備えている。
リードフレーム基板10は、図2に示すように、各凹部12にLED発光素子20が実装されることで、複数のLED発光素子装置Aを製造することができる。
DESCRIPTION OF EMBODIMENTS Hereinafter, an embodiment of a lead frame substrate for an LED light emitting element, an LED light emitting element device, and a lead frame for an LED light emitting element according to the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a diagram showing an overall configuration of the lead frame substrate 10.
As shown in FIG. 1, a lead frame substrate 10 includes a lead frame 50 in which a plurality of pads 13 and lead portions 14 to be described later are formed, and a plurality of recesses 12 formed in the lead frame 50 and arranged in a matrix. And a resin molded body 11 having.
As shown in FIG. 2, the lead frame substrate 10 can manufacture a plurality of LED light emitting element devices A by mounting the LED light emitting elements 20 in the respective recesses 12.

樹脂成形体11は、白色等の顔料、1種以上の無機フィラー、バインダ等を含有した樹脂材料から形成されている。この樹脂材料は、例えば360nm近辺の波長における光透過率が90%以上とされている。   The resin molded body 11 is formed from a resin material containing a pigment such as white, one or more inorganic fillers, a binder, and the like. For example, the resin material has a light transmittance of 90% or more at a wavelength near 360 nm.

凹部12は、例えば平面視円形で、凹部12の側面12aは、リードフレーム基板10において凹部12が開口している側の第1の面10b側から、その反対側の第2の面10cに向けてその開口面積が漸次縮小するテーパ状をなしている。   The recess 12 is, for example, circular in plan view, and the side surface 12a of the recess 12 is directed from the first surface 10b side of the lead frame substrate 10 where the recess 12 is open to the second surface 10c on the opposite side. The opening area of the lever gradually decreases.

凹部12の底部には、LED発光素子20を搭載するパッド部13と、LED発光素子20とワイヤー21やハンダ等を介して電気的に接続されるリード部14とが露出されている。これらパッド部13、リード部14を有するリードフレーム50は、例えば銅等をはじめとする導電性金属材料からなるプレート状の金属材料を所定形状にエッチングすることにより形成されている。各組のパッド13とリード部14とは、間に間隙部15を有して形成されており、樹脂成形体11を形成する樹脂材料がその間に介在することで電気的絶縁が図られている。   A pad portion 13 on which the LED light emitting element 20 is mounted and a lead portion 14 that is electrically connected to the LED light emitting element 20 via a wire 21, solder, or the like are exposed at the bottom of the recess 12. The lead frame 50 having the pad portion 13 and the lead portion 14 is formed by etching a plate-like metal material made of a conductive metal material such as copper into a predetermined shape. The pads 13 and the lead portions 14 of each set are formed with a gap 15 therebetween, and electrical insulation is achieved by interposing a resin material forming the resin molded body 11 therebetween. .

リードフレーム50は、凹部12の底部開口12bよりも大きな寸法を有している。このリードフレーム50には、凹部12の底部開口12bの外周側において樹脂成形体11と接する領域(接合領域部)Sに、例えば段差20〜30μmの凹凸51が形成されている。   The lead frame 50 has a size larger than the bottom opening 12 b of the recess 12. In the lead frame 50, unevenness 51 having a step of 20 to 30 μm, for example, is formed in a region (joining region portion) S in contact with the resin molded body 11 on the outer peripheral side of the bottom opening 12 b of the recess 12.

そして、凹部12内には、パッド部13に搭載され、リード部14に電気的に接続されたLED発光素子20を封止する封止樹脂30が充填されている。この封止樹脂30は、LED発光素子20で発する光を透過するよう、蛍光体を含有し、透過性を有した樹脂材料で形成されている。   The recess 12 is filled with a sealing resin 30 that seals the LED light emitting element 20 mounted on the pad portion 13 and electrically connected to the lead portion 14. This sealing resin 30 contains a phosphor and is formed of a resin material having transparency so as to transmit light emitted from the LED light emitting element 20.

このようなリードフレーム基板10においては、各凹部12内のLED発光素子20にリード部14を介して通電すると、LED発光素子20が発光する。その光は、封止樹脂30を透過して外部に向けて照射される。また、LED発光素子20から発せられた光の一部は凹部12の側面12aで反射し、封止樹脂30を透過して外部に向けて照射される。   In such a lead frame substrate 10, when the LED light emitting element 20 in each recess 12 is energized through the lead portion 14, the LED light emitting element 20 emits light. The light is irradiated toward the outside through the sealing resin 30. Further, a part of the light emitted from the LED light emitting element 20 is reflected by the side surface 12a of the concave portion 12, passes through the sealing resin 30, and is irradiated outward.

上記したようなリードフレーム基板10は、例えば以下のようにして形成される。(図3参照。)
まず、レジスト41aを塗布した金属材料41の表面にフォトリソグラフィ法により紫外線露光を行い、所定領域にレジストパターン42を形成する。(図3(a)〜(b))
このとき、金属材料41の両面に形成されるレジストパターン42は次のようなものである。すなわち、樹脂成形体11と接する面の接合領域部Sに形成されるレジストパターン42を、微小な孔部を有するパターンとしておく。レジスト41aに形成される微小な孔のパターンとしては、多数の細線状の孔部が並行しているもの、多数の細線状の孔部を格子状に組み合わせたもの、多数のドット状の孔部を有するもの、その他の適宜のパターンを用いることができる。金属材料41のパッド部13とリード部14が形成される領域では、微小な孔部のないレジストパターン42が形成され、間隙部15の部分はレジストが全くない領域となる。
リードフレーム10の第2の面10cとなる側の面においては、間隙部15の部分にレジストが全くなく、それ以外の部分(パッド部13とリード部14が形成される領域も含む)には、微小な孔部のないレジストパターン42が形成されている。
The lead frame substrate 10 as described above is formed as follows, for example. (See Figure 3.)
First, the surface of the metal material 41 coated with the resist 41a is exposed to ultraviolet rays by a photolithography method to form a resist pattern 42 in a predetermined region. (FIGS. 3A to 3B)
At this time, the resist patterns 42 formed on both surfaces of the metal material 41 are as follows. That is, the resist pattern 42 formed in the bonding region portion S on the surface in contact with the resin molded body 11 is set as a pattern having minute holes. As the pattern of minute holes formed in the resist 41a, a pattern in which a large number of fine line-shaped hole parts are arranged in parallel, a pattern in which a large number of fine line-shaped hole parts are combined in a lattice pattern, a large number of dot-shaped hole parts Other suitable patterns can be used. In the region where the pad portion 13 and the lead portion 14 of the metal material 41 are formed, a resist pattern 42 without a minute hole is formed, and the portion of the gap portion 15 is a region where there is no resist.
On the surface of the lead frame 10 on the side that becomes the second surface 10c, there is no resist at the gap portion 15, and other portions (including the region where the pad portion 13 and the lead portion 14 are formed) are included. A resist pattern 42 without a minute hole is formed.

次いで、エッチング法により、金属材料41においてレジストパターン42で覆われた以外の部分を除去することで、パッド部13、リード部14を複数組有したリードフレーム50を形成する。
本実施形態では、エッチング法としてハーフエッチング法を用いることで、リードフレーム50において、平面視においてパッド部13およびリード部14を囲む接合領域部Sに、段差20〜30μmの凹凸51を形成する。すなわち、接合領域部Sに形成された微小な孔部を有するレジストパターン42により、微小な孔部の部分はエッチングが行われて凹部が形成され、レジストに覆われた部分はエッチングされないので凸部として残ることになり、これによって凹凸51が形成されるのである(図3(c))。
エッチング終了後、金属材料41両面のレジストパターン42を除去する。
Next, a portion of the metal material 41 other than that covered with the resist pattern 42 is removed by etching, thereby forming a lead frame 50 having a plurality of sets of pad portions 13 and lead portions 14.
In the present embodiment, by using the half etching method as the etching method, the unevenness 51 having a step of 20 to 30 μm is formed in the bonding region S surrounding the pad portion 13 and the lead portion 14 in a plan view in the lead frame 50. That is, the resist pattern 42 having minute holes formed in the bonding region portion S is used to etch the minute hole portions to form recesses, and the portions covered with the resist are not etched. As a result, the irregularities 51 are formed (FIG. 3C).
After the etching is completed, the resist pattern 42 on both surfaces of the metal material 41 is removed.

次に、凹凸51を形成した金属材料41を金型に収容し、この金型に成形機から樹脂を充填することでトランスファー成形を行い、樹脂成形体11を形成する。形成された樹脂成形体11の凹部12の底部開口12bには、リードフレーム50のパッド部13、リード部14が露出している。   Next, the metal material 41 on which the irregularities 51 are formed is accommodated in a mold, and transfer molding is performed by filling the mold with resin from a molding machine, thereby forming the resin molded body 11. The pad portion 13 and the lead portion 14 of the lead frame 50 are exposed at the bottom opening 12 b of the recess 12 of the formed resin molded body 11.

この後、樹脂成形体11を所定の温度条件でベーク処理して樹脂を硬化させた後、ウェットブラスト法等により、パッド部13およびリード部14上に残存する樹脂成形体11のバリ取りを行うとリードフレーム基板10が完成する。   Thereafter, the resin molded body 11 is baked under a predetermined temperature condition to cure the resin, and then the resin molded body 11 remaining on the pad portion 13 and the lead portion 14 is deburred by a wet blast method or the like. As a result, the lead frame substrate 10 is completed.

しかる後は、図2に示したように、パッド部13上にLED発光素子20を搭載し、さらにワイヤー21を用いてワイヤーボンディング法によりLED発光素子20とリード部14とを電気的に接続する。   After that, as shown in FIG. 2, the LED light emitting element 20 is mounted on the pad portion 13, and the LED light emitting element 20 and the lead portion 14 are electrically connected by the wire bonding method using the wire 21. .

この後、凹部12内に封止樹脂30を充填し、硬化させてから凹部12ごとに切り離すことにより、複数のLED発光素子装置Aが形成される。   Thereafter, the sealing resin 30 is filled in the recess 12 and cured, and then separated for each recess 12 to form a plurality of LED light emitting device A.

なお、上記においては、リードフレーム50のパッド部13およびリード部14に対し、樹脂成形体11を形成する前に銀等によるめっきを施しても良いし、樹脂成形体11の形成後にめっきを施しても良い。   In the above, the pad portion 13 and the lead portion 14 of the lead frame 50 may be plated with silver or the like before the resin molded body 11 is formed, or may be plated after the resin molded body 11 is formed. May be.

上述したような構成によれば、リードフレーム50において、樹脂成形体11と接する領域Sに凹凸51が形成されているので、リードフレーム基板10およびLED発光素子装置Aにおいてリードフレーム50と樹脂成形体11との密着性を高めることができる。これにより、樹脂成形体11とリードフレーム50との界面から、水分や不純物が進入するのを防止することができ、密着不良による不良品の発生を抑えることができる・。   According to the configuration described above, since the unevenness 51 is formed in the region S in contact with the resin molded body 11 in the lead frame 50, the lead frame 50 and the resin molded body in the lead frame substrate 10 and the LED light emitting device A. 11 can be improved. As a result, moisture and impurities can be prevented from entering from the interface between the resin molded body 11 and the lead frame 50, and the occurrence of defective products due to poor adhesion can be suppressed.

なお、本発明は、図面を参照して説明した上述の各実施形態に限定されるものではなく、その技術的範囲において様々な変形例が考えられる。
例えば、本発明のリードフレームに形成される凹凸は、平面視において少なくともパッド部13およびリード部14を概ね囲むように形成されればよく、必ずしも隙間なく完全に囲んでいなくてもよい。
また、凹部の形状や数、パッド部やリード部の配置、材料等、本発明の主旨を逸脱しない限り、上記実施の形態で挙げた構成を取捨選択したり、他の構成に適宜変更したりすることが可能である。
The present invention is not limited to the above-described embodiments described with reference to the drawings, and various modifications are conceivable within the technical scope thereof.
For example, the unevenness formed in the lead frame of the present invention may be formed so as to substantially surround at least the pad portion 13 and the lead portion 14 in a plan view, and does not necessarily have to be completely surrounded without a gap.
In addition, the configuration described in the above embodiment may be selected or changed to another configuration as long as it does not depart from the gist of the present invention, such as the shape and number of recesses, the arrangement of pads and leads, materials, etc. Is possible.

10 LED発光素子用リードフレーム基板
10b 第1の面
10c 第2の面
11 樹脂成形体
12 凹部
12a 側面
12b 底部開口
13 パッド部
14 リード部
15 間隙部
20 LED発光素子
21 ワイヤー
30 封止樹脂
41 金属材料
41a レジスト
42 レジストパターン
50 LED発光素子用リードフレーム
51 凹凸
A LED発光素子装置
S 領域(接合領域部)
DESCRIPTION OF SYMBOLS 10 LED light emitting element lead frame board | substrate 10b 1st surface 10c 2nd surface 11 Resin molding 12 Recessed part 12a Side surface 12b Bottom opening 13 Pad part 14 Lead part 15 Gap part 20 LED light emitting element 21 Wire 30 Sealing resin 41 Metal Material 41a Resist 42 Resist pattern 50 LED light emitting element lead frame 51 Concavity and convexity A LED light emitting element device S area (bonding area)

Claims (5)

第1の面に1以上の凹部を有した樹脂成形体と、
前記凹部の底面に設けられ、少なくとも1つのLED発光素子を搭載するためのパッド部、および前記LED発光素子と電気的に接続するためのリード部を有したリードフレームと、を備え、
前記リードフレームは、前記凹部の底部開口よりも大きく、かつ前記凹部の底部開口の外周側において前記樹脂成形体との界面に、凹凸が形成されていることを特徴とするLED発光素子用リードフレーム基板。
A resin molded body having one or more recesses on the first surface;
A pad frame provided on the bottom surface of the recess, for mounting at least one LED light emitting element, and a lead frame having a lead part for electrical connection with the LED light emitting element;
The lead frame for an LED light emitting element, wherein the lead frame is larger than a bottom opening of the concave portion, and has an unevenness at an interface with the resin molded body on an outer peripheral side of the bottom opening of the concave portion. substrate.
前記凹凸は、ハーフエッチングにより形成されていることを特徴とする請求項1に記載のLED発光素子用リードフレーム基板。   The lead frame substrate for an LED light-emitting element according to claim 1, wherein the unevenness is formed by half etching. 前記凹凸は、20〜30μmの段差を有していることを特徴とする請求項1に記載のLED発光素子用リードフレーム基板。   The lead frame substrate for an LED light-emitting element according to claim 1, wherein the unevenness has a step of 20 to 30 μm. 請求項1から3のいずれか一項に記載のLED発光素子用リードフレーム基板と、
前記凹部内に収容され、前記パッド部に搭載されたLED発光素子と、
前記LED発光素子と前記リード部とを電気的に接続するワイヤーと、
前記凹部内に充填され、透明性を有した封止樹脂と、
を備えることを特徴とするLED発光素子装置。
A lead frame substrate for an LED light-emitting element according to any one of claims 1 to 3,
An LED light emitting element housed in the recess and mounted on the pad portion;
A wire for electrically connecting the LED light emitting element and the lead portion;
A sealing resin filled in the recess and having transparency;
An LED light-emitting element device comprising:
少なくとも1つのLED発光素子を搭載するためのパッド部と、
前記LED発光素子と電気的に接続するためのリード部と、
平面視において前記パッド部および前記リード部を囲むように形成され、樹脂成形体と接合される接合領域部と、
を備え、
前記接合領域部に、ハーフエッチングにより形成され、前記樹脂成形体との接合強度を高めるための凹凸が形成されていることを特徴とするLED発光素子用リードフレーム。
A pad portion for mounting at least one LED light emitting element;
A lead portion for electrically connecting to the LED light emitting element;
A joining region part formed so as to surround the pad part and the lead part in plan view, and joined to the resin molded body;
With
A lead frame for an LED light emitting element, wherein the joining region portion is formed by half-etching, and irregularities are formed for increasing the joining strength with the resin molded body.
JP2011045036A 2011-03-02 2011-03-02 Lead frame substrate for led light emitting element, led light emitting element device, and lead frame for the led light emitting element Withdrawn JP2012182357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011045036A JP2012182357A (en) 2011-03-02 2011-03-02 Lead frame substrate for led light emitting element, led light emitting element device, and lead frame for the led light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011045036A JP2012182357A (en) 2011-03-02 2011-03-02 Lead frame substrate for led light emitting element, led light emitting element device, and lead frame for the led light emitting element

Publications (1)

Publication Number Publication Date
JP2012182357A true JP2012182357A (en) 2012-09-20

Family

ID=47013297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011045036A Withdrawn JP2012182357A (en) 2011-03-02 2011-03-02 Lead frame substrate for led light emitting element, led light emitting element device, and lead frame for the led light emitting element

Country Status (1)

Country Link
JP (1) JP2012182357A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140089896A (en) * 2013-01-08 2014-07-16 엘지이노텍 주식회사 A light emitting device package
JP2016143814A (en) * 2015-02-04 2016-08-08 Shマテリアル株式会社 Lead frame, lead frame with resin for optical semiconductor device, manufacturing method thereof, and optical semiconductor device
JP2016184656A (en) * 2015-03-26 2016-10-20 Shマテリアル株式会社 Lead frame, lead frame with resin, optical semiconductor device, and manufacturing method thereof
CN106058008A (en) * 2016-06-07 2016-10-26 共青城超群科技协同创新股份有限公司 Method for manufacturing LED metal substrate
KR101810494B1 (en) * 2017-06-07 2017-12-20 주식회사 정진넥스텍 Lead frame assembly for light emitting didoe, process of manufacturing thereof and light emitting diode package
KR20190005802A (en) * 2017-07-06 2019-01-16 니치아 카가쿠 고교 가부시키가이샤 Light-emitting device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140089896A (en) * 2013-01-08 2014-07-16 엘지이노텍 주식회사 A light emitting device package
KR101983779B1 (en) * 2013-01-08 2019-05-29 엘지이노텍 주식회사 A light emitting device package
JP2016143814A (en) * 2015-02-04 2016-08-08 Shマテリアル株式会社 Lead frame, lead frame with resin for optical semiconductor device, manufacturing method thereof, and optical semiconductor device
JP2016184656A (en) * 2015-03-26 2016-10-20 Shマテリアル株式会社 Lead frame, lead frame with resin, optical semiconductor device, and manufacturing method thereof
CN106058008A (en) * 2016-06-07 2016-10-26 共青城超群科技协同创新股份有限公司 Method for manufacturing LED metal substrate
KR101810494B1 (en) * 2017-06-07 2017-12-20 주식회사 정진넥스텍 Lead frame assembly for light emitting didoe, process of manufacturing thereof and light emitting diode package
KR20190005802A (en) * 2017-07-06 2019-01-16 니치아 카가쿠 고교 가부시키가이샤 Light-emitting device
KR102553755B1 (en) 2017-07-06 2023-07-07 니치아 카가쿠 고교 가부시키가이샤 Light-emitting device

Similar Documents

Publication Publication Date Title
TWI505519B (en) Light-emitting diode light bar and manufacturing method thereof
TWI466336B (en) Light-emitting diode manufacturing method
US8624280B2 (en) Light emitting device package and method for fabricating the same
JP2013501368A5 (en)
CN108269899B (en) Light emitting diode package structure and manufacturing method thereof
JP2016146480A (en) LED packaging structure and manufacturing method thereof
JP2012182357A (en) Lead frame substrate for led light emitting element, led light emitting element device, and lead frame for the led light emitting element
JP2012124249A (en) Led package and manufacturing method thereof
CN102693972A (en) Light-emitting diode package and manufacturing method thereof
TW201709569A (en) Lead frame, package and light emitting device, and manufacturing method thereof
JP5862572B2 (en) LIGHT EMITTING DEVICE AND CIRCUIT BOARD MANUFACTURING METHOD
JP2015102648A5 (en)
JP2015103618A (en) Lead frame, semiconductor mounting substrate, semiconductor device, and method of manufacturing semiconductor mounting substrate
JP2012182296A (en) Lead frame substrate for led light emitting element, led light emitting element device, and lead frame for the led light emitting element
CN105826447A (en) Package structure and method for fabricating the same
KR20160059450A (en) Molded substrate, package structure, and method of manufacture the same
JP2012182207A (en) Lead frame for led element and method for manufacturing the same
TW201513410A (en) Light-emitting diode manufacturing method
JP2014049642A5 (en)
JP2018133522A (en) Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
JP2017157644A (en) Lead frame for multi-row type LED
JP2012186282A (en) Lead frame substrate for led light emitting element, and led light emitting device
CN105890631A (en) Molded proximity sensor
JP2012234977A (en) Lead frame substrate for led light-emitting element, method of manufacturing the same, led light-emitting element device, and method of manufacturing the same
TWI521745B (en) Light-emitting diode package structure and manufacturing method thereof

Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20140513