JP2012175072A - Substrate processing apparatus - Google Patents

Abstract

There is provided a substrate processing apparatus capable of uniformly forming a plurality of substrates in SiC epitaxial film growth performed under high temperature conditions.
A substrate holder for stacking and holding a plurality of substrates in the vertical direction so as to be spaced apart from each other, a plurality of substrates held in the substrate holder, In the substrate processing apparatus provided with a processing chamber to be processed and a plurality of gas supply holes for supplying a processing gas into the processing chamber and extending in the vertical direction, the gas supply nozzle includes a plurality of gas supply nozzles. The nozzle unit is configured such that each of the plurality of nozzle units is coated with a protective film on the surface thereof.
[Selection] Figure 7

Description

  The present invention relates to a substrate processing technology having a step of processing a substrate such as a wafer and a manufacturing technology of a semiconductor device, and in particular, a vertical batch type having a step of forming a silicon carbide (SiC) epitaxial film on a substrate. The present invention relates to a substrate processing apparatus and a method for manufacturing a semiconductor device.

Silicon carbide (SiC, silicon carbide) has attracted attention as a power device element material because it has a larger energy band gap and higher withstand voltage than silicon (Si, silicon). On the other hand, SiC has a higher melting point than Si, does not have a liquid phase under normal pressure, and has a low impurity diffusion coefficient, which makes it difficult to produce substrates and devices compared to Si. Yes.
For example, the SiC epitaxial film forming apparatus has a higher SiC epitaxial film forming temperature of about 1500 ° C. to 1800 ° C. than the Si epitaxial film forming temperature of 900 ° C. to 1200 ° C. In addition, technical measures are necessary to suppress decomposition. Further, since the film formation proceeds by the reaction of the two elements of Si and C, it is necessary to devise a technique that is not available in a silicon-based film formation apparatus for ensuring the film thickness and film formation composition uniformity and for controlling the doping level.

  As a mass-produced SiC epitaxial growth apparatus, apparatuses of a form called “pancake type” or “planetary type” are mainly used. 9 and 10 show a “planetary” SiC epitaxial growth apparatus. FIG. 9 is a vertical sectional view of a conventional SiC epitaxial film forming apparatus as seen from the side. 10 is a cross-sectional view taken along line AA in FIG. As shown in FIG. 9, a SiC wafer 903 is held by a wafer holder 902 and supported by a susceptor 901 so as to be suspended. The material gas rises from below through the supply gas path 905, passes through the lower surface of the SiC wafer 903, and is exhausted from the side surface of the reaction vessel wall 910 as indicated by an arrow 906. The SiC wafer 902 is heated by the induction coil 907 while rotating around the rotation shaft 904a and revolving around the rotation shaft 904b.

As described above, in the conventional apparatus, several to dozen or more SiC substrates are arranged in a plane on a susceptor heated to a film formation temperature by high frequency or the like, and a film is formed by supplying a source gas or a carrier gas. Yes. In Patent Document 1 below, a susceptor substrate is provided in order to suppress the deposition of deposits caused by the source gas on the surface facing the susceptor and the destabilization of SiC epitaxial growth due to the generation of source gas convection. There is disclosed a vacuum film forming apparatus in which a holding surface is arranged to face downward.
In these conventional apparatuses, C ₃ H ₈ (propane) and C ₂ H ₄ (ethylene) are often used as the carbon (C) raw material, SiH ₄ (monosilane) is used as the Si raw material, and H ₂ (hydrogen) is used as the carrier. ) Is used. When hydrogen chloride (HCl) is added for the purpose of suppressing silicon nucleation in the gas phase and improving the quality of crystals, or trichlorosilane (SiHCl ₃ ) or tetrachlorosilane (SiCl) containing chlorine (Cl) in the structure. ₍₄ , silicon tetrachloride) may be used.

These conventional SiC epitaxial film forming apparatuses have the following problems. In the reaction chamber structure as shown in FIG. 9, the silicon film forming material gas and the carbon film forming material are supplied from the gas supply unit installed in the center to the planarly arranged wafer, and the exhaust gas is supplied to the peripheral part. The gas concentration distribution varies greatly from the gas supply port to the exhaust port. In general, it is also possible to avoid the film thickness non-uniformity caused by this by rotating the wafer and the susceptor at the time of film formation. However, two or more sheets from the gas supply direction to the gas exhaust port direction (radial direction). If they are arranged, a difference in film thickness occurs between the processed wafers due to the above-mentioned gas concentration difference problem, so that there is a problem that the number of practical wafers that can be processed at one time is limited.
In order to increase the number of substrates that can be processed at a time, the diameter of the susceptor may be increased. However, if the diameter of the susceptor is increased, there is a problem that the size of the apparatus increases and the cost increases. This problem becomes more serious as the wafer diameter increases.

JP 2006-196807 A

On the other hand, a vertical film forming apparatus used in a silicon film forming apparatus stacks a plurality of (for example, 25 to 100) wafers at a time in a vertical direction with a footprint equivalent to one wafer. Having a structure that can be processed is very advantageous for mass production. Therefore, the inventors of the present application examined applying a vertical film forming apparatus to SiC film formation.
As a problem when this vertical film forming apparatus is applied to SiC film formation, there is a material of a reaction chamber constituent member. Since the Si film forming apparatus is mainly processed at 1200 ° C. or lower, high purity and stable quartz glass or the like is mainly used as a reaction chamber material. However, since SiC epitaxial growth is processed at a high temperature of 1500 ° C. or higher, conventional quartz glass has a problem in heat resistance and cannot be used. Therefore, it is necessary to consider a heat-resistant material that can replace quartz glass.

  An object of the present invention is to provide a substrate processing apparatus such as a vertical batch SiC epitaxial manufacturing apparatus that is heated to 1500 ° C. or more, for example, a substrate processing apparatus having a gas supply nozzle that can stably supply a source gas, An object of the present invention is to provide a semiconductor device manufacturing method and a substrate manufacturing method using a substrate processing apparatus.

A typical configuration of a substrate processing apparatus according to the present invention for solving the above-described problems is as follows.
A substrate holder for stacking and holding a plurality of substrates in the vertical direction so that each is spaced apart;
A processing chamber for accommodating the substrate holder and processing a plurality of substrates held by the substrate holder;
A plurality of gas supply holes for supplying a processing gas into the processing chamber, and a gas supply nozzle extending in the vertical direction;
The gas supply nozzle includes a plurality of nozzle units, and each of the plurality of nozzle units is a substrate processing apparatus whose surface is coated with a protective film.

  If comprised in this way, the elongate nozzle used for the vertical apparatus heated to an ultra high temperature is realizable.

The perspective view of the semiconductor manufacturing apparatus in the embodiment of the present invention is shown. The vertical sectional view which looked at the processing furnace in the embodiment of the present invention from the side is shown. The horizontal sectional view which looked at the processing furnace in the embodiment of the present invention from the upper surface is shown. The structure of the control part of the semiconductor manufacturing apparatus in embodiment of this invention is shown. 1 shows a schematic diagram of a processing furnace and its peripheral structure in an embodiment of the present invention. The horizontal sectional view which looked at the processing furnace in the embodiment of the present invention from the upper surface is shown. The gas supply nozzle in embodiment of this invention is shown. The horizontal sectional view which looked at the processing furnace in the modification of FIG. 6 from the upper surface is shown. The vertical sectional view which looked at the conventional SiC epitaxial film-forming apparatus from the side is shown. AA sectional drawing in FIG. 9 is shown.

  Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is an example of a semiconductor manufacturing apparatus 10 as a substrate processing apparatus for forming a SiC epitaxial film in an embodiment of the present invention, and is shown in a perspective view. This semiconductor manufacturing apparatus 10 is a batch type vertical heat treatment apparatus, and has a casing 12 in which a main part is arranged. In the semiconductor manufacturing apparatus 10, for example, a hoop (hereinafter referred to as a pod) 16 is used as a wafer carrier as a substrate container for storing a wafer 14 as a substrate made of Si or SiC. A pod stage 18 is disposed on the front side of the housing 12, and the pod 16 is transported to the pod stage 18 from the outside of the apparatus 10. For example, 25 wafers 14 are stored in the pod 16 and set on the pod stage 18 with the lid closed.

  A pod transfer device 20 is arranged on the front side in the housing 12 and at a position facing the pod stage 18. A pod storage shelf 22, a pod opener 24, and a substrate number detector 26 are disposed in the vicinity of the pod transfer device 20. The pod storage shelf 22 is arranged above the pod opener 24 and is configured to hold a plurality of pods 16 mounted thereon. The substrate number detector 26 is disposed adjacent to the pod opener 24. The pod transfer device 20 transfers the pod 16 among the pod stage 18, the pod storage shelf 22, and the pod opener 24. The pod opener 24 opens the lid of the pod 16, and the substrate number detector 26 detects the number of wafers 14 in the pod 16 with the lid opened.

  A substrate transfer device 28 and a boat 30 as a substrate holder are disposed in the housing 12. The substrate transfer machine 28 has an arm (tweezer) 32 and has a structure that can be rotated up and down by a driving means (not shown). The arm 32 can take out, for example, five wafers. By moving the arm 32, the wafer 14 is transferred between the pod 16 and the boat 30 placed at the position of the pod opener 24.

The boat 30 is made of a heat-resistant material such as carbon graphite or SiC, and is configured so that a plurality of wafers 14 are aligned in a horizontal posture and aligned with each other and stacked and held vertically. Has been. In addition, a boat heat insulating portion 34 as a cylindrical heat insulating member made of a heat resistant material such as SiC is disposed in the lower portion of the boat 30, and heat from the heated body 48 to be described later is applied to the processing furnace 40. It is comprised so that it may become difficult to be transmitted to the downward side of (refer FIG. 2).
A processing furnace 40 is disposed in the upper part on the back side in the housing 12. The boat 30 loaded with a plurality of wafers 14 is loaded into the processing furnace 40 and subjected to heat treatment.

  FIG. 2 is a side cross-sectional view of the processing furnace 40 of the semiconductor manufacturing apparatus 10 for forming a SiC epitaxial film in the embodiment of the present invention. FIG. 3 is a horizontal sectional view of the processing furnace 40 in the embodiment of the present invention as viewed from above. 2 and 3, a first gas supply nozzle 60 having a first gas supply port 68, a second gas supply nozzle 70 having a second gas supply port 72, and a first gas exhaust port 90 are provided. It is shown in the figure. The first gas supply port 68 supplies at least a silicon-containing gas and a chlorine-containing gas. The second gas supply port 72 supplies at least a carbon-containing gas and a reducing gas. Further, a third gas supply port 360 and a second gas exhaust port 390 for supplying an inert gas are illustrated between the reaction tube 42 and the heat insulating material 54 forming the reaction chamber.

  The processing furnace 40 includes a reaction tube 42 that forms a cylindrical reaction chamber 44. The reaction tube 42 is made of a heat-resistant material such as quartz or SiC, and is formed in a cylindrical shape with the upper end closed and the lower end opened. A reaction chamber 44 is formed in a hollow cylindrical portion inside the reaction tube 42. The reaction chamber 44 is configured to be capable of storing wafers 14 made of Si, SiC, or the like in a state where the boats 30 are aligned in a horizontal posture and aligned with each other in the center and stacked and held in the vertical direction. Yes.

  Below the reaction tube 42, a manifold 91 is disposed concentrically with the reaction tube 42. The manifold 91 is made of, for example, stainless steel and is formed in a cylindrical shape with an upper end and a lower end opened. The manifold 91 is provided so as to support the reaction tube 42. An O-ring (not shown) is provided between the manifold 91 and the reaction tube 42 as a seal member. The manifold 91 is supported by a holding body (not shown), so that the reaction tube 42 is installed vertically. A reaction vessel is formed by the reaction tube 42 and the manifold 91.

The processing furnace 40 includes a heated body 48 to be heated and an induction coil 50 as a magnetic field generation unit. The heated body 48 is disposed in the reaction chamber 44. The heated body 48 is heated by a magnetic field generated by an induction coil 50 provided outside the reaction tube 42. The induction coil 50 is provided so as to wind around the reaction tube 42. As the heated body 48 generates heat, the reaction chamber 44 is heated. The heated object 48 is easily cylindrically heated by an induction current generated by the induction coil 50 and is made of a material having excellent heat resistance, such as carbon graphite, with a closed upper end and an open lower end. Is formed.
In the vicinity of the object to be heated 48, a temperature sensor (not shown) is provided as a temperature detector for detecting the temperature in the reaction chamber 44. A temperature control unit 52 is electrically connected to the induction coil 50 and the temperature sensor, and the amount of current supplied to the induction coil 50 is adjusted based on the temperature information detected by the temperature sensor. The temperature is controlled to have a predetermined temperature distribution at a predetermined timing (see FIG. 4).
Inside the heated body 48, a first gas supply nozzle 60, a second gas supply nozzle 70, and a first gas exhaust port 90 are provided to form a reaction space 45 (processing chamber) to which a reaction gas is supplied. To do.

  Preferably, in the reaction chamber 44, between the first gas supply nozzle 60 and the second gas supply nozzle 70 and the first gas exhaust port 90, and between the heated object 48 and the wafer 14. The structure 400 is preferably provided. By providing the structure 400, the flow velocity and flow rate of the reaction gas flowing in the region (substrate array region) in which the wafers 14 serving as substrates are stacked in the vertical direction are made uniform. For example, as shown in FIG. 3, the structures 400 are provided at the opposing positions. As shown in FIG. 3, the structure 400 is a pillar having a horizontal cross section that has an arcuate shape, that is, an inner circumference and an outer circumference that form a circular arc, and at least the wafers 14 that are stacked in the vertical direction are present. It is provided so as to correspond to the region (substrate array region). The structure 400 is preferably made of a heat insulating material, carbon felt, or the like, has heat resistance and can suppress generation of particles.

A heat insulating material 54 is provided between the heated object 48 and the reaction tube 42, and by providing this heat insulating material 54, the heat of the heated object 48 is transmitted to the reaction tube 42 or the outside of the reaction tube 42. Can be suppressed. The heat insulating material 54 is made of, for example, a carbon felt that is not easily induced, and is formed in a cylindrical shape with the upper end closed and the lower end opened.
In addition, an outer heat insulating wall 92 having, for example, a water cooling structure is provided outside the induction coil 50 so as to prevent the heat in the reaction chamber 44 from being transmitted to the outside so as to surround the reaction chamber 44. . The outer heat insulating wall 92 is made of a material that is difficult to be induction-heated by the induction current generated from the induction coil 50, for example, a material such as copper (Cu), and is formed in a cylindrical shape having an open upper end and a lower end. Further, a magnetic shield 58 for preventing the magnetic field generated by the induction coil 50 from leaking outside is provided outside the outer heat insulating wall 92. Preferably, the magnetic shield 58 is made of a material that is difficult to be induction-heated by an induction current generated from the induction coil, for example, a material such as copper (Cu) or aluminum (Al), and has a closed upper end and an open lower end. It is formed into a shape.

  As shown in FIG. 2, at least one first gas supply port 68 provided in the first gas supply nozzle 60 and the second gas supply nozzle 70 are provided between the object to be heated 48 and the wafer 14. At least one second gas supply port 72 and first gas exhaust port 90 are provided. The first gas supply port 68 supplies at least a silicon-containing gas and a chlorine-containing gas. The second gas supply port 72 supplies at least a carbon-containing gas and a reducing gas. Further, a third gas supply port 360 and a second gas exhaust port 390 are disposed between the reaction tube 42 and the heat insulating material 54. Each will be described in detail.

The first gas supply nozzle 60 is provided in the reaction space 45. The first gas supply nozzle 60 is made of carbon graphite so as to withstand a high temperature of 1500 ° C. or higher, and is attached to the manifold 91 so as to penetrate the manifold 91. A plurality of first gas supply nozzles 60 may be provided. At least one first gas supply port 68 provided in the first gas supply nozzle 60 has, for example, a silane (SiH ₄ ) gas as a silicon-containing gas, a hydrogen chloride (HCl) gas as a chlorine-containing gas, and a reaction space 45. Supply in.
The structure of the first gas supply nozzle 60 will be described later in detail.

The first gas supply nozzle 60 is connected to a first gas line (gas supply pipe) 222. In this example, the first gas line 222 is connected to a silane (SiH ₄ ) gas source 210a via a mass flow controller (hereinafter referred to as MFC) 211a as a flow rate controller (flow rate control means) and a valve 212a. It is connected. The first gas line 222 is connected to a hydrogen chloride (HCl) gas source 210b via an MFC 211b and a valve 212b.
With this configuration, the supply flow rate, concentration, and partial pressure of the silane (SiH ₄ ) gas and hydrogen chloride (HCl) gas supplied into the reaction space 45 can be controlled. The valves 212a and 212b and the MFCs 211a and 211b are electrically connected to the gas flow rate control unit 78, and are controlled so that the flow rate of the supplied gas becomes a predetermined flow rate at a predetermined timing (see FIG. 4). . In this example, a silane (SiH ₄ ) gas source 210a, a hydrogen chloride (HCl) gas source 210b, valves 212a and 212b, MFCs 211a and 211b, a first gas line 222, a first gas supply nozzle 60, and a first gas. The supply port 68 constitutes a first gas supply system.

In the above example, silane (SiH ₄ ) gas is exemplified as the silicon-containing gas. However, the present invention is not limited to this, and disilane (Si ₂ H ₆ ) gas, trisilane (Si ₃ H ₈ ) gas, or the like may be used. These gases may be used in combination.
In the above example, hydrogen chloride (HCl) gas is exemplified as the chlorine-containing gas. However, the present invention is not limited to this, and chlorine gas may be used, or these gases may be used in combination. Yes.
In the above-described example, the silicon-containing gas and the chlorine-containing gas are supplied to the first gas supply nozzle 60, but a gas containing silicon and chlorine, for example, tetrachlorosilane (SiCl ₄ ) gas, trichlorosilane (SiHCl) ₃ ) Gas or dichlorosilane (SiH ₂ Cl ₂ ) gas may be supplied.

A second gas supply nozzle 70 that supplies at least a carbon-containing gas and a reducing gas is provided in the reaction space 45. The second gas supply nozzle 70 is made of carbon graphite so as to withstand a high temperature of 1500 ° C. or higher, and is attached to the manifold 91 so as to penetrate the manifold 91. A plurality of second gas supply nozzles 70 may be provided. The second gas supply port 72 provided in the second gas supply nozzle 70 has, for example, propane (C ₃ H ₈ ) gas as the carbon-containing gas and hydrogen (H ₂ ) gas as the reducing gas in the reaction space 45. Supply.

The second gas supply nozzle 70 is connected to a second gas line (gas supply pipe) 260. In this example, the second gas line 260 is connected to the propane (C ₃ H ₈ ) gas source 210c via the MFC 211c and the valve 212c, and is also connected to the hydrogen (H ₂ ) gas source via the MFC 211d and the valve 212d. 210d.
With this configuration, the supply flow rate, concentration, and partial pressure of propane (C ₃ H ₈ ) gas and hydrogen (H ₂ ) gas supplied into the reaction space 45 can be controlled. The valves 212c and 212d and the MFCs 211c and 211d are electrically connected to the gas flow rate control unit 78, and are controlled so that the flow rate of the supplied gas becomes a predetermined flow rate at a predetermined timing (see FIG. 4). In this example, a propane (C ₃ H ₈ ) gas source 210c, a hydrogen (H ₂ ) gas source 210d, valves 212c and 212d, MFCs 211c and 211d, a second gas line 260, a second gas supply nozzle 70, a second The gas supply port 72 constitutes a second gas supply system.

Although exemplified propane _(C 3 _{H 8)} gas as a carbon-containing gas is not limited thereto, ethylene _(C 2 _{H 4)} gas, acetylene _(C 2 _{H 2)} may be used gas or the like, and, These gases may be used in combination.
The first gas supply port 68 and the second gas supply port 72 are each a plurality of wafers that are stacked and held in the vertical direction while being aligned with the boat 30 in a horizontal posture and aligned with each other. 14 is preferably provided so as to supply gas for each wafer 14. Thereby, it becomes easy to control the in-plane uniformity of the film thickness of each wafer 14.
However, the present invention is not limited to this, and at least one of the first gas supply port 68 and the second gas supply port 72 is provided in the arrangement region (substrate arrangement region) of the wafers 14 stacked in the vertical direction. May be.
In the above-described embodiment, the silicon-containing gas, the chlorine-containing gas, and the carbon-containing gas and the reducing gas are supplied from the first gas supply nozzle 60, and the second gas supply nozzle 70 is not limited thereto. A gas supply nozzle may be provided for each species.

Here, the reason for constituting the first gas supply system and the second gas supply system described above will be described.
A plurality of wafers 14 composed of SiC or the like are arranged in a horizontal posture and aligned in the center and stacked and held in a vertical direction, and are composed of a silicon-containing gas, a carbon-containing gas, a reducing gas, and the like. When the raw material gas is supplied from one long gas supply nozzle extending in the longitudinal direction, the raw material gas is consumed in the gas supply nozzle, and the raw material gas shortage occurs on the downstream side of the gas supply nozzle, Also, deposits such as SiC films deposited by reaction in the gas supply nozzle block the gas supply nozzle, or problems such as unstable material gas supply and generation of particles are likely to occur. .

  Therefore, at least a silicon-containing gas and a chlorine-containing gas are supplied from the first gas supply nozzle 60, and at least a carbon-containing gas and a reducing gas are supplied from the second gas supply nozzle 70. It is possible to suppress the consumption of the supply gas in the interior, suppress the blockage in the gas supply nozzle, and prevent the generation of particles.

Preferably, silicon-containing gas, chlorine-containing gas, and rare gas such as argon (Ar) gas is supplied as carrier gas from the first gas supply nozzle 60, and carbon-containing gas is supplied from the second gas supply nozzle 70. For example, hydrogen (H ₂ ) gas as a reducing gas may be supplied.

More preferably, for example, tetrachlorosilane (SiCl ₄ ) gas as a gas containing silicon and chlorine and a rare gas such as argon (Ar) gas as a carrier gas are supplied from the first gas supply nozzle 60. A carbon-containing gas and, for example, hydrogen (H ₂ ) gas as a reducing gas may be supplied from the second gas supply nozzle 70.
A dopant gas further containing impurities may be supplied into the reaction space 45 from the first supply port 68 or the second gas supply port 72. However, the present invention is not limited to this, and a gas supply nozzle may be further provided to supply the dopant gas to supply the dopant gas into the reaction space 45.

Although exemplified hydrogen (H ₂₎ gas as a reducing gas is not limited thereto, a gas containing hydrogen, then one of the rare gas exhibiting be supplied to at least one of a rare gas and combined gas good. Here, as the rare gas, a rare gas such as argon (Ar) gas, helium (He) gas, neon (Ne) gas, krypton (Kr) gas, or xenon (Xe) gas can be used.

  In addition, as shown in FIG. 3, the first gas exhaust port 90 has a gas supply nozzle 60 connected to the first gas supply port 68 and a gas supply nozzle 70 connected to the second gas supply port 72. A gas exhaust pipe 230 connected to the first gas exhaust port 90 is provided in the manifold 91 so as to pass through the manifold 91. A vacuum exhaust device 220 such as a vacuum pump is connected to the downstream side of the gas exhaust pipe 230 through a pressure sensor 93 as a pressure detector and an APC (Auto Pressure Controller, hereinafter referred to as APC) valve 214 as a pressure regulator. Yes. A pressure control unit 98 is electrically connected to the pressure sensor 93 and the APC valve 214, and the pressure control unit 98 adjusts the opening degree of the APC valve 214 based on the pressure detected by the pressure sensor 93. Thus, the pressure in the reaction space 45 is controlled to become a predetermined pressure at a predetermined timing (see FIG. 4).

  As described above, at least the silicon-containing gas and the chlorine-containing gas are supplied from the first gas supply port 68, and at least the carbon-containing gas and the reducing gas are supplied from the second gas supply port 72. Since it flows parallel to the surface of the wafer 14 made of silicon or silicon carbide and flows toward the first exhaust port 90, the entire wafer 14 is exposed to the gas efficiently and uniformly.

  As shown in FIG. 3, the third gas supply port 360 is disposed between the reaction tube 42 and the heat insulating material 54 and is attached so as to penetrate the manifold 91. Further, the second gas exhaust port 390 is disposed between the reaction tube 42 and the heat insulating material 54 and is disposed so as to be opposed to the third gas supply port 360. A gas exhaust pipe 230 connected to the second gas exhaust port 390 is provided so as to penetrate therethrough. For example, a rare gas argon (hereinafter referred to as Ar) gas is supplied to the third gas supply port 360 as an inert gas. This prevents, for example, a silicon-containing gas, a carbon-containing gas, a chlorine-containing gas, or a mixed gas thereof from entering the gap between the reaction tube 42 and the heat insulating material 54 as a gas contributing to the growth of the SiC epitaxial film. It is possible to prevent the inner wall of 42 or the outer wall of the heat insulating material 54 from being deteriorated and unnecessary products from adhering.

  The inert gas supplied between the reaction tube 42 and the heat insulating material 54 is exhausted from the vacuum pump 220 via the gas exhaust tube 230 from the second gas exhaust port 390.

Next, the configuration around the processing furnace 40 will be described.
FIG. 5 shows a schematic view of the processing furnace 40 and its peripheral structure. Below the processing furnace 40, a seal cap 102 is provided as a furnace port lid for secretly closing the lower end opening of the processing furnace 40. The seal cap 102 is made of, for example, a metal such as stainless steel and has a disk shape. On the upper surface of the seal cap 102, an O-ring is provided as a seal material that comes into contact with the lower end of the processing furnace 40. A rotation mechanism 218 is provided on the seal cap 102. The rotating shaft 106 of the rotating mechanism 218 is connected to the boat 30 through the seal cap 102, and is configured to rotate the wafer 14 by rotating the boat 30. The seal cap 102 is configured to be moved up and down in the vertical direction by an elevating motor 122, which will be described later, as an elevating mechanism directed to the outside of the processing furnace 40, whereby the boat 30 is carried into and out of the processing furnace 40. It is possible to do. A drive control unit 108 is electrically connected to the rotation mechanism 218 and the lifting motor 122, and is configured to control to perform a predetermined operation at a predetermined timing (see FIG. 4).

  A lower substrate 112 is provided on the outer surface of the load lock chamber 110 as a spare chamber. The lower substrate 112 is provided with a guide shaft 116 that is fitted to the lifting platform 114 and a ball screw 118 that is screwed to the lifting platform 114. The upper substrate 120 is provided on the upper ends of the guide shaft 116 and the ball screw 118 erected on the lower substrate 112. The ball screw 118 is rotated by an elevating motor 122 provided on the upper substrate 120. When the ball screw 118 rotates, the lifting platform 114 is configured to move up and down.

  A hollow elevating shaft 124 is suspended from the elevating table 114, and the connection between the elevating table 114 and the elevating shaft 124 is airtight. The elevating shaft 124 moves up and down together with the elevating table 114. The lifting shaft 124 passes through the top plate 126 of the load lock chamber 110. The through hole of the top plate 126 through which the elevating shaft 124 passes has a sufficient margin so as not to contact the elevating shaft 124. Between the load lock chamber 110 and the lifting platform 114, a bellows 128 is provided as a hollow elastic body having elasticity so as to cover the periphery of the lifting shaft 124 in order to keep the load lock chamber 110 airtight. The bellows 128 has a sufficient expansion / contraction amount that can correspond to the amount of elevation of the lifting platform 114, and the inner diameter of the bellows 128 is sufficiently larger than the outer shape of the lifting shaft 124 so that it does not come into contact with the expansion / contraction of the bellows 128. It is configured.

  An elevating board 130 is fixed horizontally to the lower end of the elevating shaft 124. A drive unit cover 132 is airtightly attached to the lower surface of the elevating substrate 130 via a seal member such as an O-ring. The elevating board 130 and the drive unit cover 132 constitute a drive unit storage case 134. With this configuration, the inside of the drive unit storage case 134 is isolated from the atmosphere in the load lock chamber 110.

  Further, a rotation mechanism 218 of the boat 30 is provided inside the drive unit storage case 134, and the periphery of the rotation mechanism 218 is cooled by the cooling mechanism 136.

  The power cable 138 passes from the upper end of the elevating shaft 124 through the hollow portion of the elevating shaft 124 and is guided and connected to the rotating mechanism 218. A cooling water flow path 140 is formed in the cooling mechanism 136 and the seal cap 102. The cooling water pipe 142 passes from the upper end of the elevating shaft 124 through the hollow portion of the elevating shaft 124 and is guided and connected to the cooling flow path 140.

When the elevating motor 122 is driven and the ball screw 118 rotates, the drive unit storage case 134 is raised and lowered via the elevating table 114 and the elevating shaft 124.
As the drive unit storage case 134 is raised, the seal cap 102 provided in an airtight manner on the elevating substrate 130 closes the furnace port 144 that is an opening of the processing furnace 40, so that wafer processing is possible. When the drive unit storage case 134 is lowered, the boat 30 is lowered together with the seal cap 102, and the wafer 14 can be carried out to the outside.

  FIG. 4 shows a control configuration of each part constituting the semiconductor manufacturing apparatus 10 for forming a SiC epitaxial film. The temperature control unit 52, the gas flow rate control unit 78, the pressure control unit 98, and the drive control unit 108 are electrically connected to a main control unit 150 that controls the entire semiconductor manufacturing apparatus 10. The main control unit 150 includes an operation unit and an input / output unit (not shown). These temperature control unit 52, gas flow rate control unit 78, pressure control unit 98, and drive control unit 108 are configured as a controller 152.

  Next, a method for forming, for example, a SiC film on a substrate such as a wafer 14 made of SiC or the like as one step of a semiconductor device manufacturing process using the heat treatment apparatus 10 configured as described above will be described. . In the following description, the operation of each part constituting the heat treatment apparatus 10 is controlled by the controller 152.

  First, when a pod 16 containing a plurality of wafers 14 is set on the pod stage 18, the pod 16 is transferred from the pod stage 18 to the pod storage shelf 22 by the pod transfer device 20, and the stock is stored in the pod storage shelf 22. To do. Next, the pod 16 stocked on the pod storage shelf 22 is transported and set to the pod opener 24 by the pod transport device 20, the lid of the pod 16 is opened by the pod opener 24, and the pod 16 is detected by the substrate number detector 26. The number of wafers 14 accommodated in is detected.

Next, the wafer 14 is taken out from the pod 16 at the position of the pod opener 24 by the substrate transfer device 28 and transferred to the boat 30.
When a plurality of wafers 14 are loaded into the boat 30, the boat 30 holding the plurality of wafers 14 is loaded into the reaction chamber 44 by the lifting / lowering operation of the lifting platform 114 and the lifting shaft 124 by the lifting motor 122 (boat loading). ) In this state, the seal cap 102 seals the lower end of the manifold 91 via the O-ring.

  The reaction space 45 is evacuated by the evacuation device 220 so that the pressure in the reaction space 45 becomes a predetermined pressure (degree of vacuum). At this time, the pressure in the reaction chamber 44 is measured by the pressure sensor 93, and the APC valve 214 communicating with the first gas exhaust port 90 and the second gas exhaust port 390 is feedback-controlled based on the measured pressure. The Further, the object to be heated 48 is heated so that the wafer 14 and the reaction space 45 have a predetermined temperature. At this time, the energization amount to the induction coil 50 is feedback-controlled based on the temperature information detected by the temperature sensor so that the reaction space 45 has a predetermined temperature distribution. Subsequently, the wafer 14 is rotated in the circumferential direction by rotating the boat 30 by the rotation mechanism 218.

Subsequently, the silicon-containing gas and the chlorine-containing gas that contribute to the SiC epitaxial growth reaction are respectively supplied from the gas sources 210a and 210b, and are ejected into the reaction space 45 from the gas supply port 68, and the carbon-containing gas and the reducing gas are used. A certain hydrogen (H ₂ ) gas is supplied from the gas sources 210c and 210d, and is ejected from the gas supply port 72 into the reaction chamber 44 to cause a SiC epitaxial growth reaction.

At this time, the openings of the corresponding MFCs 211a and 211b are adjusted so that the silicon-containing gas and the chlorine-containing gas have predetermined flow rates, and then the valves 212a and 212b are opened, and the respective gases are the first gas. After flowing through the supply pipe 222, it flows through the first gas supply nozzle 60 and is supplied from the first gas supply port 68 into the reaction chamber 44. In addition, the opening of the corresponding MFCs 211c and 211d is adjusted so that the carbon-containing gas and the hydrogen (H ₂ ) gas as the reducing gas have predetermined flow rates, and then the valves 212c and 212d are opened. After the gas flows through the second gas supply pipe 260, the gas flows through the second gas supply nozzle 70 and is introduced into the reaction space 45 from the second gas supply port 72.

  The gas supplied from the first gas supply port 68 and the second gas supply port 72 passes through the reaction space 45 inside the heated body 48 in the reaction chamber 44 and passes through the reaction gas 45 from the first gas exhaust port 90. The gas is exhausted through the exhaust pipe 230. When the gas supplied from the first gas supply port 68 and the second gas supply port 72 passes through the reaction space 45, it comes into contact with the wafer 14 made of SiC or the like, and on the surface of the wafer 14. SiC epitaxial film growth is performed.

  Further, after the opening degree of the corresponding MFC 211e is adjusted by the gas supply source 210e so that argon (Ar) gas, which is a rare gas as an inert gas, has a predetermined flow rate, the valve 212e is opened, Then, the gas is supplied through the third gas supply port 360 into the reaction chamber 44. The argon (Ar) gas supplied from the third gas supply port 360 passes between the heat insulating material 54 in the reaction chamber 44 and the reaction tube 42 and is exhausted from the second gas exhaust port 390.

  When a preset time elapses, the above gas supply is stopped, and the SiC epitaxial film growth is stopped. In addition, an inert gas is supplied into the reaction chamber 44 from an inert gas supply source (not shown), the inside of the reaction chamber 44 is replaced with the inert gas, and the pressure in the reaction chamber 44 is returned to normal pressure.

  Thereafter, the seal cap 102 is lowered by the elevating motor 122 so that the lower end of the manifold 91 is opened, and the processed wafer 14 is carried out from the lower end of the manifold 91 to the outside of the reaction tube 42 while being held in the boat 30 ( The boat 30 waits at a predetermined position until all wafers 14 supported by the boat 30 are cooled. Next, when the wafer 14 of the boat 30 that has been waiting is cooled to a predetermined temperature, the substrate transfer device 28 takes out the wafer 14 from the boat 30 and transfers it to the empty pod 16 set in the pod opener 24. And accommodate. Thereafter, the pod 16 containing the wafer 14 is transferred to the pod storage shelf 22 or the pod stage 18 by the pod transfer device 20. In this way, a series of operations of the semiconductor manufacturing apparatus 10 is completed.

As described above, the growth of the deposited film in the gas supply nozzle is suppressed, and in the reaction space 45, the silicon-containing gas, the carbon-containing gas, the chlorine-containing gas, and hydrogen (H ₂ ) that is the reducing gas supplied from the gas supply nozzle. By reacting the gas, a plurality of wafers 14 composed of SiC or the like are uniformly grown in a horizontal posture and aligned in the center and are stacked and held in the vertical direction, and silicon carbide epitaxial growth is performed uniformly. It can be performed.

  Next, the gas supply nozzle in this embodiment is demonstrated using FIG. 6 and FIG. FIG. 6 is a schematic diagram of a horizontal section when the processing furnace 40 in the embodiment of the present invention is viewed from above. As shown in FIG. 6, the first gas supply nozzle 60 and the second gas supply nozzle 70 are installed such that the gas supply ports 68 and 72 face each other. In this way, the reaction gas is mixed in a space closer to the wafer 14 and can be supplied to the entire wafer 14, whereby a SiC film can be uniformly formed on the wafer 14.

As shown in the modification of FIG. 8, a plurality of first gas supply nozzles 60 and second gas supply nozzles 70 are provided along the inner periphery of the heated body 48 in the reaction chamber 44. The gas supply port 68 and the second gas supply port 72 may be directed toward the center of the wafer 14, respectively, and the second gas supply nozzles 70 may be disposed at both ends. FIG. 8 is a schematic diagram of a horizontal cross section when the processing furnace in the modification of the present embodiment is viewed from above. In the modification of FIG. 8, the reducing gas supplied from the second gas supply port 72 facilitates the supply of the film forming gas supplied from the first gas supply port 68 to the wafer 14, and other than the wafer 14. It is possible to suppress the deposition of the Si film or the SiC film at the location.
Furthermore, in addition to the above configuration, as shown in FIG. 8, the first gas supply nozzle 60 and the second gas supply nozzle 70 may be provided alternately. As a result, the number of locations where the film forming gas supplied from the first gas supply port 68 and the reducing gas supplied from the second gas supply port 72 are mixed increases, and the film forming gas before reaching the wafer 14 is increased. And the reducing gas can be efficiently mixed, so that the bias of the supply gas is suppressed and the in-plane uniformity of the film thickness is further improved.

FIG. 7 shows the first gas supply nozzle 60 in the embodiment of the present invention. The second gas supply nozzle 70 has a similar structure.
First, in the gas supply nozzle shown in FIG. 7, a carbon-based graphite material is used as a heat-resistant material for a base material instead of quartz. However, if the surface is in the state of carbon as it is, it may react with H ₂ (hydrogen) used as a carrier gas for the raw material gas for epitaxial growth to form CH ₄ (methane gas), and the carbon surface may be etched. In addition, the carbon-based graphite material has a high heat-resistant temperature but a low density, and its surface is porous (porous). Therefore, if the carbon-based graphite material is used as it is, the source gas may enter the porous carbon base material.

Therefore, in this embodiment, coating is performed with a film having a higher density than carbon graphite, which is a base material of the gas supply nozzle. Examples of such a protective film include coating with SiC (silicon carbide) and TaC (tantalum carbide).
By coating the inner surface of the gas supply nozzle using carbon graphite as a base material with such a protective film, etching by hydrogen gas can be suppressed and the life of the gas supply nozzle can be extended. In addition, coating the inner surface with a protective film having a density higher than that of the base material of the gas supply nozzle can suppress the intrusion of the film forming gas into the base material, thereby reducing the amount of degassing during evacuation. .
Moreover, although these coatings are produced | generated by a CVD apparatus etc., since the gas supply nozzle of this embodiment is arrange | positioned along the board | substrate arranged in the height direction, it is very long. Such coating on a long member causes an increase in running cost due to an increase in the size of the apparatus, and also has a high technical difficulty such as film thickness uniformity.

Therefore, in FIG. 7, the cylindrical graphite nozzle 60 is divided into a plurality of nozzle units. By dividing the nozzle unit in this way, the material to be coated is shortened, so it is possible to avoid an increase in the size of the CVD apparatus for coating, and technically, the protective film can be uniformly applied to the inner surface of the cylinder. Coating is possible, and the portion where carbon is exposed without being coated can be eliminated.
Each of the divided nozzle units 60a to 60g is coupled by screwing and has a structure that can be integrated. The uppermost part of the most downstream (uppermost) nozzle unit 60g has a bag shape, and the nozzle units 60f to 60b have a cylindrical shape. Since graphite cannot be welded like quartz glass, each nozzle unit cuts a graphite ingot by cutting.

  Here, the reason why screwing is used instead of simply inserting is as follows. That is, when a long gas nozzle is divided into a plurality of gas units for coating, the weight of one gas unit is reduced. On the other hand, when a thick film is formed on the substrate as in silicon carbide epitaxial growth, a large amount of gas needs to be supplied from the gas nozzle, so the pressure in the gas nozzle increases. Therefore, it is possible to prevent the nozzle units having their own weights lightened from coming out due to a pressure increase in the gas nozzle by connecting them with a means for preventing them from coming off such as screwing. Note that it is not necessary to provide a means for preventing the nozzle unit from slipping out. For example, the nozzle units 60g, 60f, and 60e on the upper side (downstream side) are simply coupled together by the escape prevention means, and the nozzle units 60g, 60f, and 60e are prevented from coming out by their own weight against the pressure in the gas nozzle. If possible, the lower (upstream) nozzle units 60d, 60c, 60b, 60a may be plug-in types.

  In the example of FIG. 7, a female screw is processed at the connection portion at the lower end of the nozzle unit 60g connected to the nozzle unit 60f, and a male screw is processed at the connection portion at the upper end of the nozzle unit 60f to which the nozzle unit 60g is coupled. ing. The female screw at the lower end of the nozzle unit 60g and the male screw at the upper end of the nozzle unit 60f are connected by screw tightening, and the nozzle unit 60g and the nozzle unit 60f are coupled. Similarly, the nozzle unit 60f and the nozzle unit 60e, the nozzle unit 60e and the nozzle unit 60d, the nozzle unit 60d and the nozzle unit 60c, and the nozzle unit 60c and the nozzle unit 60b are coupled by screwing.

The most upstream (bottommost) proximal end nozzle unit 60a connected to the manifold 91 needs to penetrate the side surface of the manifold 91 and connect to the gas supply pipe. Therefore, the location where the base end nozzle unit 60a is arranged is low in the lower part of the furnace, and unlike the graphite nozzle unit, it is easy to process and is made of quartz glass. can do. The nozzle unit 60a is provided with a seal portion in a direction intersecting with a direction in which a plurality of nozzle units are stacked, in the horizontal direction in the example of FIG. A male thread is machined in the connection portion at the upper end of the nozzle unit 60a, and is coupled to the female thread at the lower end of the nozzle unit 60b by screwing.
The nozzle unit 60a is sealed to the manifold 91 by a known O-ring seal joint provided on the manifold 91, as in the conventional vertical device for Si devices.

  The gas supply holes 68 for supplying the source gas are arranged in a line in the vertical direction at equal intervals. The gas supply holes 68 at each stage need to face the same direction. When the gas supply holes 68 of the divided nozzle units 60c to 60g are processed before assembly, the gas supply holes 68 of the divided nozzle units may be displaced in the rotation direction. In order to prevent this, in the present embodiment, before the gas supply hole 68 is processed, assembly is performed including the supply unit nozzle unit 60a made of quartz glass, and the position of the gas supply hole 68 is determined in the assembled state. Drill holes. After drilling, the protective film is coated in the state of each disassembled short nozzle unit. After coating, reassembly is performed to obtain an integrally coated nozzle.

In this way, even a long nozzle is divided into short nozzle units and coated, so that the uniformity of the coating thickness is improved, and in particular, the formation of an uncoated place is suppressed. In addition, since the gas supply hole 68 is drilled in a state where the nozzle is assembled, it is possible to suppress the gas supply hole 68 from shifting in the rotation direction.
The gas supply hole 68 may be positioned in the assembled state of the nozzle 60, and then disassembled, and then drilled in the state of each short nozzle unit, and the protective film may be coated after the drilling process. .

As a coating material, SiC (silicon carbide) coating, TaC (tantalum carbide) coating, or the like is used. As the coating method, a CVD method or the like is used. In particular, TaC has corrosion resistance against ClF ₃ or the like generally used as a cleaning gas. Therefore, dry cleaning using ClF ₃ or the like is possible, and the maintenance cycle can be lengthened.
In addition, when the graphite gas unit is coated, the insertion portion such as the male screw portion and the female screw portion is also coated. As a result, friction is generated at the time of insertion (or at the time of screwing), but generation of dust can be prevented because the hard coating is applied from the insertion portion.
Furthermore, it is preferable that a processing gas for coating flow inside the nozzle unit after assembly. Thereby, a junction part is coated and the gas leakage from a junction part can also be decreased.

According to the nozzle structure of the present embodiment, at least one of the following excellent effects can be exhibited.
(1) Since the base material of the gas supply nozzle is made of graphite, it can be used at a high temperature exceeding 1500 ° C.
(2) Since the surface of graphite, which is a base material, is coated with a protective film having a higher density than the base material, it is possible to prevent the deposition gas from entering the base material.
(3) By dividing the nozzle, the coating thickness on the inner surface of the nozzle can be made uniform.
(4) Therefore, it is possible to uniformly coat the entire surface of the graphite nozzle, and a long nozzle for a vertical apparatus can be realized with the coated graphite.
(5) According to the above (2), the generation of particles from the graphite base material of the nozzle can be suppressed during the process gas supply.
(6) According to (2) above, etching of the graphite base material of the nozzle by H ₂ gas can be suppressed.
(7) Due to the effects (1) to (6) described above, the initial nozzle shape can be maintained for a long time, and the nozzle replacement cycle due to deterioration can be extended. As a result, downtime due to apparatus maintenance can be shortened, and productivity can be improved.
(8) Since the graphite nozzle can be suppressed from reacting with H ₂ to form CH ₄ (methane) in a high temperature environment, the influence on the process can be suppressed.
(9) When TaC coating is applied, dry cleaning with a cleaning gas such as ClF ₃ becomes possible, and the maintenance cycle can be further extended.
(10) Since each of the divided nozzles is coupled by means of prevention of slipping out such as screwing, even if the pressure inside the nozzle rises during gas supply, it does not come off and come off.

In addition, this invention is not limited to the said embodiment, It cannot be overemphasized that it can change variously in the range which does not deviate from the summary.
For example, in the above embodiment, the description has been given using the batch type vertical apparatus, but the present invention is not limited to this, and the present invention can also be applied to a horizontal apparatus or the like.
In the above-described embodiment, the case where the wafer is processed has been described. However, the processing target may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.
Moreover, in the said embodiment, although SiC epitaxial growth was demonstrated, it is not restricted to this, It cannot be overemphasized that it is applicable when the long nozzle which needs a coating is required also except high temperature processing. .

The description of this specification includes the following inventions.
That is, the first invention is
A gas supply nozzle provided with a plurality of gas supply holes for supplying a processing gas into a processing chamber in which a plurality of substrates to be processed are arranged;
The base of the gas supply nozzle is formed of carbon graphite,
The inner surface of the gas supply nozzle is a gas supply nozzle coated with a material whose density is higher than that of the base material.
Thus, the carbon surface can be prevented from being etched by hydrogen gas, and the film formation gas can be prevented from entering the substrate.

The second invention is
A gas supply nozzle provided with a plurality of gas supply holes for supplying a processing gas into a processing chamber in which a plurality of substrates to be processed are arranged;
The gas supply nozzle is composed of a plurality of nozzle units, and each of the plurality of nozzle units is a gas supply nozzle whose surface is coated with a protective film.
If comprised in this way, even if it is a elongate nozzle used for a vertical apparatus, the uniformity of the coating thickness of the protective film to the cylinder inner surface etc. will improve, and it will be suppressed that especially the place which is not coated is made. .

According to a third invention, in the second invention,
Each of the plurality of nozzle units is a gas supply nozzle having an escape prevention means.
Dividing the nozzles reduces the weight of each nozzle unit and increases the possibility of escape due to the gas pressure in the nozzle. However, when configured as in the second aspect, it prevents the nozzle unit from coming out due to the gas pressure in the nozzle. it can. In particular, when forming an SiC epitaxial film, it is necessary to increase the film thickness to be formed. Therefore, it is necessary to increase the gas flow rate. However, since the pressure in the nozzle can be increased by the escape prevention means, the gas flow rate is reduced. A lot can be done.

According to a fourth invention, in the third invention,
The escape prevention means is a gas supply nozzle composed of a male screw or a female screw.
If comprised in this way, a drop-out prevention means can be comprised by cutting, and manufacture is easy.

A fifth invention is the fourth invention,
The escape prevention means is a gas supply nozzle in which a hard coating is applied to the male screw and the female screw.
With this configuration, the hard screw part and the female screw part that generate friction during screwing are coated with a hard coating that is harder than the constituent materials of the male screw part and the female screw part, so that generation of dust during screwing can be suppressed. it can.

A sixth invention is the second invention, wherein:
The most upstream nozzle unit of the gas supply nozzle is made of quartz, and the nozzle unit provided with the plurality of gas supply holes is a gas supply nozzle made of graphite.
With this configuration, the nozzle unit in the high temperature region in the processing chamber is made of graphite that can withstand high temperatures, and the nozzle unit in the most upstream area in the relatively low temperature region is made of quartz that can be welded, so that The upstream nozzle unit can be formed in a complicated structure.

In a seventh invention according to the first or second invention,
The material of the coating is a gas supply nozzle which is TaC.
With this configuration, dry cleaning with a cleaning gas such as ClF ₃ becomes possible due to the corrosion resistance of TaC.

The eighth invention
A substrate holder for stacking and holding a plurality of substrates in the vertical direction so that each is spaced apart;
A substrate processing apparatus comprising: a processing chamber that accommodates the substrate holder and processes a plurality of substrates held by the substrate holder; and the gas supply nozzle according to any one of the first to seventh inventions. It is.

The ninth invention
Forming a male screw or a female screw at a connection part connecting nozzle units;
A step of connecting a plurality of nozzle units by screwing together the connecting portions of the nozzle units;
A step of positioning a plurality of gas supply holes in each of a plurality of nozzle units in a state where the connection parts are screwed together and connected,
After the positioning step of the gas supply hole, releasing the screwing between the connecting portions, and releasing the connection of the plurality of nozzle units;
Forming a gas supply hole in the nozzle unit that has positioned the gas supply hole;
Coating the surface of the disconnected nozzle unit with a protective film.

  DESCRIPTION OF SYMBOLS 10 ... Substrate processing apparatus, 14 ... Wafer, 12 ... Housing, 16 ... Pod, 18 ... Pod stage, 22 ... Pod storage shelf, 28 ... Substrate transfer machine, 30 ... Boat, 40 ... Processing furnace, 42 ... Reaction tube 44 ... reaction chamber, 45 ... reaction space, 48 ... heated body, 50 ... induction coil, 54 ... heat insulating material, 60 ... first gas supply nozzle, 60a-60g ... nozzle unit, 68 ... first gas supply 70, second gas supply nozzle, 72, second gas supply port, 90, first gas exhaust port, 91, manifold, 93, pressure sensor, 102, seal cap, 152, controller, 210a, silicon Containing gas supply source, 210b ... Chlorine-containing gas supply source, 210c ... Carbon-containing gas supply source, 210d ... Reducing gas supply source, 210e ... Inert gas supply source, 211a to 211e ... MFC, 212 -212e ... Open / close valve, 214 ... APC valve, 218 ... Boat rotation mechanism, 220 ... Vacuum pump, 222 ... First gas supply pipe, 260 ... Second gas supply pipe, 240 ... Third gas supply pipe, 230 ... gas exhaust pipe, 360 ... third gas supply port, 390 ... second gas exhaust port.

Claims (4)

A substrate holder for stacking and holding a plurality of substrates in the vertical direction so that each is spaced apart;
A processing chamber for accommodating the substrate holder and processing a plurality of substrates held by the substrate holder;
A plurality of gas supply holes for supplying a processing gas into the processing chamber, and a gas supply nozzle extending in the vertical direction;
The gas supply nozzle includes a plurality of nozzle units, and each of the plurality of nozzle units is a substrate processing apparatus whose surface is coated with a protective film. The substrate processing apparatus according to claim 1,
Each of the plurality of nozzle units is a substrate processing apparatus having an escape prevention means. The substrate processing apparatus according to claim 2,
The escape prevention means is a substrate processing apparatus constituted by a male screw or a female screw. A substrate holder for stacking and holding a plurality of substrates in the vertical direction so that each is spaced apart;
A processing chamber for accommodating the substrate holder and processing a plurality of substrates held by the substrate holder;
A plurality of gas supply holes for supplying a processing gas into the processing chamber, and a gas supply nozzle extending in the vertical direction;
The base of the gas supply nozzle is formed of carbon graphite,
A substrate processing apparatus in which an inner surface of the gas supply nozzle is coated with a material whose density is higher than that of the base material.

Images