JP2012169454A - Semiconductor module - Google Patents

Abstract

A semiconductor module with improved repairability is provided.
The semiconductor module includes a cooler, a heat sink on which a semiconductor element is mounted via an insulator, an internal connection terminal electrically connected to the semiconductor element, the heat sink and the internal connection terminal. A first structure including a holding member for holding the external connection terminal, and a second structure including a holding member for holding the external connection terminal, and the first structure and The second structure is mounted on the same side of the cooler, and the internal connection terminal and the external connection terminal are electrically connected by being detachably contacted, and the first structure is The second structure can be attached to and detached from the cooler with the second structure mounted on the cooler.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor module including a semiconductor element.

  Conventionally, a semiconductor module including a semiconductor element such as a switching element is known. For example, a power is formed on the heat sink at the bottom of the case by forming a recess in the inner wall of the case and providing a connection pattern having a plurality of exposed portions formed along the inner surface of the recess. A substrate (substrate on which a semiconductor element is mounted) and a terminal of a connection pattern are connected, and a plurality of terminal portions as terminal portions of the control element are formed on the protrusions on the control substrate so as to be in contact with corresponding exposed portions A semiconductor module or the like that connects a power board and a control board via a connection pattern by detachably attaching a protrusion to a recess (see, for example, Patent Document 1).

JP 2000-183276 A

  However, since the conventional semiconductor module is configured to directly connect the bonding material and the connection pattern formed on the inner wall of the case, it is difficult to improve the repairability of the structure around the semiconductor element. That is, the conventional semiconductor module has a problem that the workability of repair (repair) in the case where the semiconductor element is damaged is poor.

  This invention is made | formed in view of said point, and makes it a subject to provide the semiconductor module which improved repair property.

  The semiconductor module includes a cooler, a heat sink on which a semiconductor element is mounted via an insulator, an internal connection terminal electrically connected to the semiconductor element, and a holding for holding the heat sink and the internal connection terminal. A first structure including a member, an external connection terminal, and a second structure including a holding member that holds the external connection terminal. The first structure and the second structure The structure is mounted on the same side of the cooler, and the internal connection terminal and the external connection terminal are electrically connected by being detachably contacted, and the first structure is the second structure It is required that the body can be attached to and detached from the cooler with the body mounted on the cooler.

  ADVANTAGE OF THE INVENTION According to this invention, the semiconductor module which improved repair property can be provided.

It is sectional drawing which illustrates the semiconductor module which concerns on this Embodiment. It is a top view which illustrates the whole structure of the cooler of a semiconductor module concerning this embodiment. 1 is a circuit diagram illustrating a system including a semiconductor module according to an embodiment. It is a flowchart which illustrates the assembly method of the semiconductor module which concerns on this Embodiment. It is FIG. (The 1) which illustrates the assembly method of the semiconductor module which concerns on this Embodiment. It is FIG. (The 2) which illustrates the assembly method of the semiconductor module which concerns on this Embodiment. It is sectional drawing which illustrates the semiconductor module which concerns on a comparative example. It is a flowchart which illustrates the assembly method of the semiconductor module which concerns on a comparative example. It is FIG. (The 1) which illustrates the assembly method of the semiconductor module which concerns on a comparative example. It is FIG. (2) which illustrates the assembly method of the semiconductor module which concerns on a comparative example.

  Hereinafter, embodiments for carrying out the invention will be described with reference to the drawings. In addition, in each drawing, the same code | symbol is attached | subjected to the same component and the overlapping description may be abbreviate | omitted.

[Structure of Semiconductor Module According to this Embodiment]
First, the structure of the semiconductor module according to the present embodiment will be described. FIG. 1 is a cross-sectional view illustrating a semiconductor module according to this embodiment. FIG. 2 is a plan view illustrating the entire structure of the cooler of the semiconductor module according to this embodiment. Referring to FIGS. 1 and 2, the semiconductor module 10 includes a first structure 20, a second structure 30, and a cooler 40 as main components.

  The first structure 20 includes, as main components, a semiconductor element 21, a joint 22, a substrate 23, an insulator 24, a heat sink 25, an internal connection terminal 26, a housing 27, and a bonding material. 28. The semiconductor module 10 forms, for example, an inverter, and the semiconductor element 21 includes, for example, U-phase, V-phase, and W-phase upper arms and lower arms that are arranged in parallel with each other between a positive electrode line and a negative electrode line. These are insulated gate bipolar transistors (IGBTs) and diodes. The semiconductor element 21 may include a switching element such as a MOSFET, for example.

The semiconductor element 21 is mounted on the substrate 23 via a joint 22 such as solder or silver (Ag) paste. As the substrate 23, for example, a ceramic substrate such as aluminum oxide (Al ₂ O ₃ ) or aluminum nitride (AlN) can be used. However, the substrate 23 has a three-layer structure in which an aluminum layer is formed on a substrate other than a ceramic substrate or on both surfaces of the ceramic substrate as long as the required insulating properties, thermal conductivity, mechanical strength, and the like are satisfied. Such a substrate may be used.

  The substrate 23 is mounted on the heat sink 25 via the insulator 24. The insulator 24 is made of, for example, a resin sheet, and enables high heat conduction from the substrate 23 to the heat sink 25 while ensuring electrical insulation between the substrate 23 and the heat sink 25. The insulator 24 may have a larger outer shape than the substrate 23 and the heat sink 25.

  The heat radiating plate 25 has a heat sink function for absorbing and diffusing heat (transient heat or the like), and mainly absorbs heat from the semiconductor element 21 generated when the semiconductor element 21 is driven and diffuses it inside. The heat sink 25 is preferably formed from a metal having excellent heat diffusibility such as copper (Cu) or aluminum (Al), but may be made of a material other than metal as long as it has a heat sink function. .

  The internal connection terminal 26 is a terminal that electrically connects the first structure 20 and the second structure 30 and is made of a conductive material such as copper (Cu) or aluminum (Al). . The internal connection terminal 26 includes a first connection portion 26a and a second connection portion 26b. The first connection portion 26 a protrudes on the lower side of the housing 27.

  The substrate 23, the insulator 24, the heat radiating plate 25, and the internal connection terminal 26 are held by a housing 27. The housing 27 is a holding member made of an insulating material whose main component is, for example, an epoxy resin. The first connection portion 26 a of the internal connection terminal 26 is exposed on the lower side of the housing 27, and the second connection portion 26 b of the internal connection terminal 26 is exposed on the upper side of the housing 27. The bonding material 28 electrically connects an electrode (not shown) of the semiconductor element 21 and the second connection portion 26 b of the internal connection terminal 26. As the bonding material 28, for example, a gold (Au) wire, an aluminum (Al) wire, or the like can be used.

  The second structure 30 includes an external connection terminal 31 and a housing 32 that holds the external connection terminal 31 as main components. The external connection terminal 31 is made of a conductive material such as copper (Cu) or aluminum (Al), for example. The housing 32 is a holding member made of an insulating material whose main component is, for example, an epoxy resin. The external connection terminal 31 is formed by processing from a metal plate (lead frame base material), for example. The external connection terminal 31 is, for example, a power line wiring member (power line lead) or a signal transmission wiring member (signal line lead).

  The cooler 40 includes, as main components, a refrigerant circulation part 41 having corrugated fins through which a cooling medium such as cooling water flows, a top plate 42 joined to the upper surface of the refrigerant circulation part 41, A bottom plate 43 joined to the lower surface of the refrigerant circulation part 41, and a spacer 44 interposed between the top plate 42 and the bottom plate 43 outside the cooler body 41. The cooler 40 includes an introduction pipe 45 for introducing the refrigerant into the refrigerant circulation portion 41 and a lead-out pipe 46 for leading the refrigerant. The cooler 40 has, for example, a substantially rectangular shape in which the extending direction of the introduction pipe 45 and the outlet pipe 46 is the longitudinal direction. The cooler 40 can be formed of a metal having excellent thermal conductivity such as copper (Cu) or aluminum (Al).

  The lower surface of the heat radiating plate 25 of the first structure 20 is joined to the upper surface of the refrigerant circulation part 41 of the cooler 40 via the heat transfer material 50. As the heat transfer material 50, for example, a brazing material made of a low melting point aluminum alloy (such as an Al—Si alloy or an Al—Si—Mg alloy) can be used. The thickness of the heat transfer material 50 can be, for example, about 10 to 200 μm.

  The lower surface of the housing 32 of the second structure 30 is bonded to the upper surface of the top plate 42 of the cooler 40 via an adhesive 51. As the adhesive 51, for example, an epoxy adhesive or the like can be used. The thickness of the adhesive material 51 can be about 10-200 micrometers, for example. The first connection portion 26 a of the internal connection terminal 26 of the first structure 20 is electrically connected to the upper surface of the external connection terminal 31 of the second structure 30 in a detachable state.

  In this way, the heat from the semiconductor element 21 generated when the semiconductor element 21 is driven passes through the joint portion 22, the substrate 23, the insulator 24, the heat radiating plate 25, and the heat transfer material 50, and the refrigerant circulation portion of the cooler 40 The semiconductor element 21 is cooled by being transmitted to the cooling medium flowing through the inside 41.

  As shown in FIG. 2, a plurality of semiconductor modules 10 are mounted on the cooler 40. One or a plurality of semiconductor elements 21 can be mounted on the semiconductor module 10. For example, the semiconductor modules 10 are arranged in two rows along the longitudinal direction of the cooler 40.

  FIG. 3 is a circuit diagram illustrating a system including the semiconductor module according to this embodiment. The system including the semiconductor module 10 shown in FIG. 3 includes a storage battery 55, a capacitor 56, a buck-boost converter 60, a capacitor 66, an inverter 70, and a motor 90.

  The storage battery 55 is a power storage device such as a secondary battery such as nickel metal hydride or lithium ion or an electric double layer capacitor. The capacitor 56 is connected in parallel to the storage battery 55 and has a function of smoothing the DC voltage of the storage battery 55.

  The step-up / down converter 60 includes switching elements 61 and 62, diodes 63 and 64, and a reactor 65. In the example of FIG. 3, the switching elements 61 and 62 are insulated gate bipolar transistors (IGBTs). An insulated gate bipolar transistor (IGBT) is a bipolar transistor in which a MOSFET is incorporated in a gate, and has three terminals of an emitter, a collector, and a gate. The diodes 63 and 64 are flywheel diodes. The flywheel diode is a diode for circulating current.

  The switching element 61 and the switching element 62 are connected in series. The switching element 61 and the diode 63 are connected in parallel, and the switching element 62 and the diode 64 are connected in parallel. Each gate of the switching elements 61 and 62 is connected to an ECU (not shown) or the like, and performs a switching operation based on a drive signal from the ECU (not shown) or the like.

  The emitter of the switching element 61 and the anode of the diode 63, the collector of the switching element 62 and the cathode of the diode 64, and one end of the reactor 65 are connected to each other. The other end of the reactor 65 is connected to one end of the capacitor 56 and the positive electrode of the storage battery 55. The other end of the capacitor 56 is connected to the emitter of the switching element 62, the anode of the diode 64, and the negative electrode of the storage battery 55.

  The collector of the switching element 61 and the cathode of the diode 63 are connected to one end of the capacitor 66 and one end of the inverter 70. The emitter of the switching element 62 and the anode of the diode 64 are connected to the other end of the capacitor 66 and the other end of the inverter 70. That is, the capacitor 66 is connected in parallel to the buck-boost converter 60, smoothes the DC voltage of the buck-boost converter 60, and supplies the smoothed DC voltage to the inverter 70.

  Inverter 70 includes switching elements 71 to 76 and diodes 81 to 86. The switching elements 71 to 76 are insulated gate bipolar transistors (IGBT). The diodes 81 to 86 are flywheel diodes. The switching element 71 and switching element 72, the switching element 73 and switching element 74, and the switching element 75 and switching element 76 are connected in series. The switching elements 71 to 76 and the diodes 81 to 86 are connected in parallel, respectively. Each gate of the switching elements 71 to 76 is connected to an ECU (not shown) or the like, and performs a switching operation based on a drive signal from the ECU (not shown) or the like.

  The collector of the switching element 71, the cathode of the diode 81, the collector of the switching element 73, the cathode of the diode 83, the collector of the switching element 75, and the cathode of the diode 85 are connected to each other. The emitter of the switching element 72, the anode of the diode 82, the emitter of the switching element 74, the anode of the diode 84, the emitter of the switching element 76, and the anode of the diode 86 are connected to each other.

  The emitter of the switching element 71, the anode of the diode 81, the collector of the switching element 72, and the cathode of the diode 82 are connected to one end of the coil 91 of the motor 90. The emitter of the switching element 73, the anode of the diode 83, the collector of the switching element 74, and the cathode of the diode 84 are connected to one end of the coil 92 of the motor 90. The emitter of the switching element 75, the anode of the diode 85, the collector of the switching element 76, and the cathode of the diode 86 are connected to one end of the coil 93 of the motor 90. The other ends of the coils 91, 92, and 93 of the motor 90 are connected.

  The motor 90 is, for example, a drive motor for generating torque for driving drive wheels of a vehicle (a vehicle that generates vehicle driving force by electric energy such as a hybrid vehicle, an electric vehicle, and a fuel cell vehicle) One end of three coils 91, 92, 93 of U phase, V phase, and W phase are commonly connected to the neutral point. The motor 90 can be configured to have both the function of an electric motor and the function of a generator.

  The system shown in FIG. 3 operates as follows. That is, the buck-boost converter 60 performs a switching operation in response to a switching control signal from an ECU (not shown) or the like, boosts the voltage V1 across the storage battery 55 to the voltage V2, and outputs it to both ends of the capacitor 66. . Specifically, when the switching element 61 is turned off and the switching element 62 is turned on, a current flows from the storage battery 55 to the reactor 65, and the reactor 65 temporarily stores electric energy. Next, when the switching element 61 is turned on and the switching element 62 is turned off, the electrical energy temporarily stored in the reactor 65 is output via the diode 63. That is, the voltage V 1 across the storage battery 55 is boosted to the voltage V 2 and output across the capacitor 66.

  The step-up / step-down converter 60 performs a switching operation in response to a switching control signal from an ECU (not shown) or the like, steps down the voltage V2 across the capacitor 66 to a voltage V1, and outputs it to both ends of the storage battery 55. . Specifically, when the switching element 61 is turned on and the switching element 62 is turned off, a current flows from the capacitor 66 to the reactor 65, and the reactor 65 temporarily stores electric energy. Next, when the switching element 61 is turned off and the switching element 62 is turned on, the electrical energy temporarily stored in the reactor 65 is circulated through the diode 64. That is, the voltage V2 across the capacitor 66 is stepped down to the voltage V1, and the storage battery 55 is charged.

  Capacitor 66 smoothes the DC voltage from buck-boost converter 60 and supplies the smoothed DC voltage to inverter 70. The inverter 70 is a switching circuit that mutually converts an AC voltage and a DC voltage. When the DC voltage is supplied from the capacitor 66, the inverter 70 performs a switching operation in response to a switching control signal from an ECU (not shown) or the like. The motor 90 is driven by converting the DC voltage into the AC voltage.

  The inverter 70 performs a switching operation in response to a switching control signal from an ECU (not shown) or the like during regenerative braking of the vehicle, converts the AC voltage generated by the motor 90 into a DC voltage, and converts the converted DC voltage. A voltage is supplied to the buck-boost converter 60 via the capacitor 66. Regenerative braking means braking with regenerative power generation when the driver who drives the vehicle operates the foot brake, or while not operating the foot brake, while regenerating power by turning off the accelerator pedal while driving Including decelerating (or stopping acceleration) the vehicle.

  The semiconductor element 21 of the semiconductor module 10 according to the present embodiment can be configured to include one or both of the buck-boost converter 60 and the inverter 70. Further, the semiconductor element 21 of the semiconductor module 10 according to the present embodiment may be configured to include only a part of the circuits of the buck-boost converter 60 and the inverter 70.

[Assembly method of semiconductor module according to this embodiment]
Next, a method for assembling the semiconductor module according to the present embodiment will be described. FIG. 4 is a flowchart illustrating the method for assembling the semiconductor module according to this embodiment. 5 and 6 are diagrams illustrating a method for assembling a semiconductor module according to this embodiment.

  4 and 5, first, in step S100, the second structure 30 including the external connection terminal 31 and the housing 32 holding the external connection terminal 31 is manufactured by injection molding or the like. Next, in step S110, the adhesive 51 is applied to the lower surface of the second structure 30 (the lower surface of the housing 32). For example, the adhesive 51 can be applied annularly in the vicinity of the inner edge of the lower surface of the second structure 30 (the lower surface of the housing 32).

  Next, in step S <b> 120, the lower surface of the housing 32 of the second structure 30 is joined to the upper surface of the top plate 42 of the cooler 40 via the adhesive 51. At this time, for example, the second structural body 30 is pressed against the upper surface of the top plate 42 of the cooler 40 to crush the adhesive 51, and in this state, the adhesive 51 is cured by heating with a heating furnace or the like. .

  Next, referring to FIGS. 4 and 6, in step S130, the first structure 20 is produced. Specifically, a structure including a substrate 23, an insulator 24, a heat dissipation plate 25, an internal connection terminal 26, and a housing 27 (for convenience, the manufactured structure is referred to as a heat dissipation module) by injection molding or the like. Make it. Then, the semiconductor element 21 is mounted on the substrate 23 of the heat dissipation module via the joint portion 22. Further, the electrode (not shown) of the semiconductor element 21 and the second connection portion 26b of the internal connection terminal 26 are joined by a bonding material 28 such as a gold (Au) wire or an aluminum (Al) wire. Thus, the first structure 20 is completed.

  Next, in step S140, the heat transfer material 50 is applied to the lower surface of the first structure 20 (the lower surface of the heat dissipation plate 25). Next, in step S150, the lower surface of the heat radiating plate 25 of the first structure 20 is joined to the upper surface of the refrigerant circulation part 41 of the cooler 40 via the heat transfer material 50. At this time, for example, the heat transfer material 50 is crushed by pressing the first structure 20 against the upper surface of the refrigerant circulation portion 41 of the cooler 40, and heated in a heating furnace or the like in this state. Is cured.

  Note that either one of Steps S100 to S110 and Steps S130 to S140 may be executed first, or both may be executed in parallel, but Step S150 is performed after Step S120. Execute.

  That is, the first structure 20 is joined to the cooler 40 in a state where the second structure 30 is already joined to the cooler 40. At this time, the first structure 20 is cooled by the cooler so that the first connection portion 26 a of the internal connection terminal 26 of the first structure 20 is in contact with the upper surface of the external connection terminal 31 of the second structure 30. 40. As a result, the first structure 20 and the second structure 30 are electrically connected to complete the semiconductor module 10 (S160).

[Comparative example]
Next, a specific effect of the semiconductor module 10 according to the present embodiment will be described with reference to a comparative example.

[Structure of semiconductor module according to comparative example]
First, the structure of the semiconductor module according to the comparative example will be described. FIG. 7 is a cross-sectional view illustrating a semiconductor module according to a comparative example. Referring to FIG. 7, in the semiconductor module 10A, the first structure 20 of the semiconductor module 10 shown in FIG. 1 is replaced with the first structure 20A, and the second structure 30 is replaced with the second structure 30A. The structure is substituted.

  The first structure 20A includes a semiconductor element 21, a joint portion 22, a substrate 23, an insulator 24, a heat sink 25, and a bonding material 28 as main components. That is, the first structure 20A has a structure in which the internal connection terminal 26 and the housing 27 are removed from the first structure 20 shown in FIG. Since the function of the semiconductor module 10A is the same as that of the semiconductor module 10, the description thereof is omitted.

  The second structure 30A includes, as main components, an external connection terminal 31A and a housing 32A that holds the external connection terminal 31A. The external connection terminal 31A and the housing 32A are different in shape from the external connection terminal 31 and the housing 32 shown in FIG.

  The lower surface of the heat radiating plate 25 of the first structure 20 </ b> A is joined to the upper surface of the refrigerant circulation part 41 of the cooler 40 via the heat transfer material 50. The lower surface of the housing 32 </ b> A of the second structure 30 </ b> A is joined to the upper surface of the top plate 42 of the cooler 40 via an adhesive 51. Unlike the semiconductor module 10 shown in FIG. 1, the bonding material 28 electrically connects the electrode (not shown) of the semiconductor element 21 of the first structure 20A and the upper surface of the external connection terminal 31A of the second structure 30A. Connected.

  In this way, the heat from the semiconductor element 21 generated when the semiconductor element 21 is driven passes through the joint portion 22, the substrate 23, the insulator 24, the heat radiating plate 25, and the heat transfer material 50, and the refrigerant circulation portion of the cooler 40. The semiconductor element 21 is cooled by being transmitted to the cooling medium flowing through the inside 41.

  Although a plan view of the semiconductor module 10A is not shown, a plurality of semiconductor modules 10A are mounted on the cooler 40 as in FIG. One or a plurality of semiconductor elements 21 can be mounted on the semiconductor module 10A. Each semiconductor module 10 </ b> A is arranged in, for example, two rows along the longitudinal direction of the cooler 40.

[Assembly method of semiconductor module according to comparative example]
Next, a method for assembling the semiconductor module according to the comparative example will be described. FIG. 8 is a flowchart illustrating a method for assembling a semiconductor module according to the comparative example. 9 and 10 are diagrams illustrating a method for assembling a semiconductor module according to a comparative example.

  8 and 9, first, in step S200, a structure including a substrate 23, an insulator 24, and a heat dissipation plate 25 (for convenience, the manufactured structure is referred to as a heat dissipation module). Next, in step S210, the heat transfer material 50 is applied to the lower surface of the heat dissipation module (the lower surface of the heat dissipation plate 25). Next, in step S <b> 220, the lower surface of the heat dissipation plate 25 of the heat dissipation module is joined to the upper surface of the refrigerant circulation portion 41 of the cooler 40 via the heat transfer material 50. At this time, for example, the heat transfer material 50 is pressed against the upper surface of the refrigerant circulation portion 41 of the cooler 40 to crush the heat transfer material 50, and in this state, the heat transfer material 50 is cured by heating with a heating furnace or the like.

  Next, in step S <b> 230, the semiconductor element 21 is mounted on the substrate 23 of the heat dissipation module via the bonding portion 22. As a result, the portion of the first structure 20 </ b> A excluding the bonding material 28 is bonded onto the cooler 40.

  Next, referring to FIG. 8 and FIG. 10, in step S240, the second structure 30A including the external connection terminal 31A and the housing 32A that holds the external connection terminal 31A is manufactured by injection molding or the like. Next, in step S250, the adhesive 51 is applied to the lower surface of the second structure 30A (the lower surface of the housing 32A). For example, the adhesive 51 can be applied annularly in the vicinity of the inner edge of the lower surface of the second structure 30A (the lower surface of the housing 32A).

  Next, in step S260, the lower surface of the housing 32A of the second structure 30A is joined to the upper surface of the top plate 42 of the cooler 40 via the adhesive 51. At this time, for example, the second structural body 30A is pressed against the upper surface of the top plate 42 of the cooler 40 to crush the adhesive 51, and in this state, the adhesive 51 is cured by heating with a heating furnace or the like. . Thereby, on the cooler 40, the part of the first structure 20A excluding the bonding material 28 and the second structure 30A are joined.

  Next, in step S270, the electrode (not shown) of the semiconductor element 21 of the first structure 20A and the upper surface of the external connection terminal 31A of the second structure 30A are connected to a gold (Au) wire or aluminum (Al). Bonding is performed using a bonding material 28 such as a wire (not shown). As a result, the first structure 20A and the second structure 30A are electrically connected to complete the semiconductor module 10A shown in FIG. 7 (S280).

  Thus, in the semiconductor module 10A according to the comparative example, the first structure 20A and the second structure 30A are directly bonded by the bonding material 28. Therefore, for example, in order to repair (repair) when the semiconductor element 21 is damaged, it is necessary to remove the bonding material 28 and then replace the first structure 20A.

  On the other hand, in the semiconductor module 10 according to the present embodiment, the first structure 20 has a small module structure in which peripheral members of the semiconductor element 21 including the bonding material 28 are integrated, and the second structure 30 is cooled. It is configured to be detachable from the cooler 40 while being mounted on the cooler 40. As a result, for example, when the semiconductor element 21 is broken or the bonding material 28 is disconnected, in order to repair (repair) these components, only the first structure 20 needs to be replaced.

  Specifically, first, the heat transfer material 50 is softened to remove only the first structure 20 from the semiconductor module 10. And the other 1st structure 20 which operates normally is prepared, and it joins to the upper surface of the refrigerant | coolant distribution | circulation part 41 of the cooler 40 through the heat-transfer material 50. FIG. Thus, when repairing parts such as the semiconductor element 21 and the bonding material 28, the second structure 30 is not replaced (the second structure 30 is mounted on the cooler 40). As it is, only the first structure 20 can be exchanged, so that the repairability can be improved.

  In addition, since product evaluation during development including bonding evaluation of the bonding material 28 can be performed in units of modules (for each first structure 20), the development cost of the semiconductor module 10 can be reduced and the development period can be shortened. It becomes. Furthermore, the equipment used in the process of bonding the bonding material 28 can be reduced in size, and a reduction in loss due to defects in the process can be expected.

  The preferred embodiment of the present invention has been described in detail above. However, the present invention is not limited to the above-described embodiment, and various modifications can be made to the above-described embodiment without departing from the scope of the present invention. And substitutions can be added.

DESCRIPTION OF SYMBOLS 10 Semiconductor module 20 1st structure 21 Semiconductor element 22 Junction part 23 Board | substrate 24 Insulator 25 Heat sink 26 Internal connection terminal 26a 1st connection part 26b 2nd connection part 27 Housing 28 Bonding material 30 2nd structure 31 External Connection terminal 32 Housing 40 Cooler 41 Refrigerant flow part 42 Top plate 43 Bottom plate 44 Spacer 45 Introducing pipe 46 Outlet pipe 50 Heat transfer material 51 Adhesive material 55 Storage battery 56, 66 Capacitor 60 Buck-boost converter 61, 62, 71, 72, 73 , 74, 75, 76 Switching element 63, 64, 81, 82, 83, 84, 85, 86 Diode 65 Reactor 70 Inverter 90 Motor 90 Motor 91, 92, 93 Coil

Claims (1)

A cooler,
A first structure including a heat sink having a semiconductor element mounted thereon via an insulator, an internal connection terminal electrically connected to the semiconductor element, and a holding member for holding the heat sink and the internal connection terminal When,
A second structure including an external connection terminal and a holding member for holding the external connection terminal;
The first structure and the second structure are mounted on the same side of the cooler;
The internal connection terminal and the external connection terminal are electrically connected by detachable contact,
The first structure is a semiconductor module that can be attached to and detached from the cooler while the second structure is mounted on the cooler.

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