JP2012138432A - Ceramic wiring board for probe card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a ceramic wiring board for a probe card capable of preventing separation between an insulating substrate and an internal wiring layer.
A mullite sintered body has a first region present in at least a part of the periphery of the internal wiring layer and a second region other than the first region, and is measured by X-ray diffraction. The ratio of the main peak intensity of alumina to the main peak intensity of mullite in the first region is 0.4 or more, and the ratio of the main peak intensity of alumina to the main peak intensity of mullite in the second region is 0. .3 or less.
[Selection] Figure 1

Description

  The present invention relates to a ceramic wiring substrate for a probe card provided with fine wiring for measuring electrical characteristics of a semiconductor wafer.

  For semiconductor elements with large-scale integrated circuits that are simultaneously formed on a semiconductor wafer such as a Si wafer, a product with poor electrical connection and electrical characteristics at a substantially constant rate due to electrical failure due to adhesion of foreign matter, etc. It is included.

  As a device for detecting a defective product of the semiconductor element, there is known a probe card capable of collectively inspecting electrical characteristics of a large number of semiconductor elements at the same time in a semiconductor wafer state.

  This probe card has a wiring board in which fine wirings made of tungsten, molybdenum, or alloys thereof are formed on the main surface and inside of an insulating base made of mullite sintered body, and is placed on the surface of the wiring board with high precision. A plurality of probe pins (measurement terminals) called probe pins, which are applied to the terminals of a number of semiconductor elements, and the output when voltage is applied is measured and compared with an expected value. Thus, the quality of a large number of semiconductor elements is collectively determined (for example, see Patent Document 1).

JP 2010-98049 A

  However, if a mullite sintered body is used for the insulating substrate constituting the probe card wiring board and tungsten or molybdenum or an alloy thereof is used for the wiring, the thermal expansion coefficient (3-4 ppm / ° C.) of the mullite sintered body is Because of the large difference in thermal expansion coefficient (10 ppm / ° C. or more) with tungsten or molybdenum, separation occurs between the insulating base and the internal wiring layer in the probe card wiring board after firing. There was a problem.

  Accordingly, the present invention has been made in view of such circumstances, and an object thereof is to provide a probe card ceramic wiring board capable of preventing separation between an insulating substrate and an internal wiring layer after firing. To do.

  The ceramic wiring board for a probe card according to the present invention contains 40-60% by volume of copper and 40-60% by volume of at least one of tungsten or molybdenum in an insulating base made of a mullite sintered body. A ceramic wiring board for a probe card provided with a wiring layer, wherein the mullite sintered body includes a first region present in at least a part of the periphery of the internal wiring layer and a second region other than the first region. And the ratio of the main peak intensity of alumina to the main peak intensity of mullite in the first region is 0.4 or more and measured in X-ray diffraction, and in the second region The ratio of the main peak intensity of alumina to the main peak intensity of mullite is 0.3 or less.

  In the ceramic wiring board for a probe card of the present invention, it is desirable that mullite particles containing a large amount of alumina exist so as to surround the inner wiring layer.

  In the ceramic wiring board for a probe card of the present invention, it is preferable that the first region exists so as to surround the entire periphery of the internal wiring layer.

  In the ceramic wiring board for a probe card according to the present invention, the insulating base is formed by laminating a plurality of ceramic insulating layers made of the mullite sintered body, and includes the first region. Contains more alumina than the other ceramic insulating layers, and the ratio of the main peak intensity of alumina to the main peak intensity of mullite when measured by X-ray diffraction of the ceramic insulating layer including the first region is It is desirable that it is 0.4 or more.

  In the ceramic wiring board for a probe card of the present invention, it is desirable that an average thickness of the ceramic insulating layer including the first region is 10 to 30% of an average thickness of the other ceramic insulating layers. .

  According to the present invention, separation between the insulating base and the internal wiring layer can be prevented.

It is a schematic sectional drawing which shows 1st Embodiment of the ceramic wiring board for probe cards of this invention. It is a schematic sectional drawing of 2nd Embodiment of the ceramic wiring board for probe cards of this invention.

(First embodiment)
A first embodiment of a ceramic wiring board for probe cards according to the present invention will be described with reference to FIG. FIG. 1 is a schematic cross-sectional view showing a first embodiment of a ceramic wiring board for a probe card according to the present invention. The ceramic circuit board for a probe card shown in FIG. 1 includes an insulating base 11 made of a sintered body having mullite particles as main crystal particles, and a low resistance metal and a high melting point metal formed inside the insulating base 11 as main components. And an internal wiring layer 12 formed of a composite conductor and a surface wiring layer 13 formed on the surface of the insulating base 11, and the internal wiring layers 12 in the insulating base 11 or between the internal wiring layers 12 and the surface wiring. A via-hole conductor 14 that electrically connects the layer 13 is provided.

  The insulating base 11 is composed of a plurality of ceramic insulating layers 11a, 11b, 11c, and 11d (hereinafter referred to as 11a to d), and each ceramic insulating layer 11a to 11d is a sintered body containing mullite as a main component ( Mullite sintered body).

When the ceramic sintered body which is the ceramic insulating layers 11a to 11d is a mullite sintered body, the thermal expansion coefficient (room temperature to 300 ° C.) of the ceramic insulating layers 11a to 11d is 3.3 to 4.3 × 10 ^−6. / ° C range. As a result, the probe card ceramic wiring board 1 of the present embodiment is misaligned between the measurement terminals provided on the probe card ceramic wiring board 1 and the measurement pads formed on the surface of the Si wafer during a thermal load test. Therefore, it can be suitably used for inspection of electrical characteristics.

The mullite constituting the mullite sintered body which is the ceramic insulating layers 11a to 11d is present as a particulate or columnar crystal. In the present invention, the average particle size of mullite is not particularly limited, but the thermal conductivity improves as the crystal grain size increases, and the strength improves as the crystal grain size decreases. A suitable range of the average particle size of mullite is selected from the viewpoint of achieving both high strength. In this case, the average particle size of mullite is preferably 1.0 to 5.0 μm, particularly 1.7 to 2.5 μm.

  Here, in the ceramic wiring board for probe card of the present embodiment, the mullite sintered body is present in at least a part of the periphery of the internal wiring layer 12 and the second region other than the first region 11A. Area 11B.

  The mullite sintered body had a ratio of the main peak intensity of alumina to the main peak intensity of mullite in the first region 11A of 0.4 or more when measured by X-ray diffraction, and the second The ratio of the main peak intensity of alumina to the main peak intensity of mullite in the region 11B is 0.3 or less. As a result, a sintered body having a thermal expansion coefficient between the insulating base 11 and the internal wiring layer 12 is formed as the first region 11A between the insulating base 11 and the internal wiring layer 12 after firing. In addition, the difference in thermal expansion coefficient between the insulating substrate 11 and the internal wiring layer 12 can be reduced. As a result, separation between the insulating substrate 11 and the internal wiring layer 12 can be prevented.

  Further, in the probe card ceramic wiring board of the present embodiment, it is desirable that the first region 11 </ b> A exists so as to surround the entire periphery of the internal wiring layer 12. In this case, the occurrence of separation between the insulating base 11 and the internal wiring layer 12 can be suppressed even after the heat resistance test.

  On the other hand, when the mullite sintered body is measured by X-ray diffraction, the ratio of the main peak intensity of alumina to the main peak intensity of mullite in the first region 11A is lower than 0.4. When the ratio is the same as the ratio of the main peak intensity of alumina to the main peak intensity of mullite in the region 11B, separation between the insulating substrate 11 and the internal wiring layer 12 is likely to occur after firing.

It should be noted that the ratio of the main peak intensity of alumina to the main peak intensity of mullite in the first region 11A and the second region 11B is high. The thermal expansion coefficient becomes larger than 5 × 10 ⁻⁶ / ° C., and the insulating base 11 having low thermal expansion cannot be obtained.

  In this case, confirmation of the first region 11A containing a large amount of alumina present in a part of the periphery of the internal wiring layer 12 is performed by applying an X-ray to the first region 11A and identifying the crystal phase. .

The mullite sintered body as the ceramic insulating layers 11a to 11d includes a mullite main crystal phase and a grain boundary phase formed between the main crystal phases, and contains Mn as a sintering aid. It is desirable from the viewpoint of sintering mullite at a low temperature of 1380 ° C. to 1420 ° C. At this time, Mn may exist in the residual glass phase present in the grain boundary phase after sintering, but Mn ₃ Al ₂ Si from the viewpoint of improving chemical resistance and substrate strength of the probe card ceramic wiring board. It is preferably present as ₃ O ₁₂ . Furthermore, as a component other than Mn, at least one selected from Ti and Mg may be contained to such an extent that characteristics such as chemical resistance, substrate strength, and density are not impaired. At this time, when the X-ray diffraction intensity of the (210) plane of mullite is 100%, the X-ray diffraction intensity of the (222) plane of Mg ₂ Al ₄ Si ₅ O ₁₈ is 0.
2 to 0.7%, and the (420) plane X-ray diffraction intensity of Mn ₃ Al ₂ Si ₃ O ₁₂ is 0.2 to 0.7%, and MnAl ₂ O ₄ and MgAl ₂ O ₄ are substantially It is desirable that the ceramic sintered body is not contained. Thereby, the chemical resistance test can be improved. Here, the fact that the ceramic sintered body does not contain MnAl ₂ O ₄ and MgAl ₂ O ₄ means that when X-ray diffraction is performed, MnAl ₂ O ₄ and MgAl ₂ O on the X-ray diffraction diagram. ₄ has a diffraction intensity of each main peak equal to or lower than the noise level of the X-ray diffraction pattern.

  On the other hand, a mullite sintered body is formed using glass containing Si as a main component as a sintering aid, and there are many glasses (amorphous parts) containing Si as a main component at the grain boundaries of the ceramic sintered body. If present, the chemical resistance is greatly reduced. For this reason, in this invention, in order to improve the chemical resistance of a mullite sintered body, many crystal phases excellent in chemical resistance are precipitated in the grain boundary.

For example, when a mullite sintered body in which glass containing Si as a main component exists at the grain boundary is immersed in a 40 mass% potassium hydroxide aqueous solution for 5 hours, elution of the glass component occurs. In the mullite sintered body in which Mn ₃ Al ₂ Si ₃ O ₁₂ is precipitated, elution is greatly suppressed with respect to the aqueous potassium hydroxide solution.

  The internal wiring layer 12 constituting the probe card ceramic wiring board of the present embodiment is a composite conductor having a composition in which copper is 40 to 60% by volume and at least one of Mo and W is 40 to 60% by volume. It is configured.

  Tungsten (W), which is a refractory metal, can be used as a material for forming the internal wiring layer 12 that can be fired simultaneously with the mullite sintered body. The internal wiring layer 12 made of tungsten (W) has a high electric resistance value. On the other hand, low resistance metals such as copper (Cu) have a melting point that is considerably lower than the firing temperature of ceramic sintered bodies containing mullite as a main component. It cannot be fired simultaneously with the body. Thus, by using the composite conductor of copper and tungsten for the internal wiring layer 12, the electrical resistance value is slightly higher than that of copper alone, but mullite is the main component at a firing temperature of 1380 ° C. to 1420 ° C. described later. Simultaneous firing with the ceramic sintered body is possible.

  However, even if simultaneous firing is possible, since firing is performed at a temperature exceeding the melting point of copper, it is necessary to suppress the melting of copper and maintain the shape of the internal wiring layer 12. Therefore, in order to achieve both low resistance and shape retention of the internal wiring layer 12, the ratio of the low melting point metal is 40-60% by volume and the high melting point metal is 40-60% by volume.

  The surface wiring layer 13 may have the same composition as the internal wiring layer 13 or may be different, and may be formed only of Mo or W which is a refractory metal.

  Further, it is desirable that the via-hole conductor 14 has the same composition as that of the surface wiring layer 13 in order to prevent the conductor component from dropping off from the via-hole conductor 14 during firing.

  The above-described ceramic wiring board for probe card 1 of the present embodiment includes a measurement terminal (probe pin) provided on the ceramic wiring board for probe card 1 and a measurement pad formed on the surface of the Si wafer during a thermal load test. Can be suitably used for inspection of electrical characteristics. Further, when the mullite sintered body has a specific composition, it has excellent chemical resistance and substrate strength.

  Next, a method for manufacturing the above-described probe card ceramic wiring board will be described.

First, in order to form the insulating substrate 11, a mullite (3Al ₂ O ₃ · 2SiO ₂ ) powder having a purity of 99% or more and an average particle size of 0.5 to 2.5 μm is used. By making the average particle size of mullite powder 0.5 μm or more, sheet formability is improved, and by making it 2.5 μm or less, it is possible to promote densification by firing at a temperature of 1420 ° C. or less. It becomes.

Next, the mullite powder 100 wt%, _Al 2 _{O 3} powder 0-50 mass%, _Mn 2 _{O 3} powder from 1 to 10 wt%, 1-5 wt% of MgO powder, a TiO ₂ powder 1 -10 mass% is added, and mixed powder is prepared. In this case, the Al ₂ O ₃ powder used as an additive has an average particle size of 0.5 to 1.5 μm, the Mn ₂ O ₃ powder has an average particle size of 0.5 to 3 μm, and the MgO powder has an average particle size of 0.1. It is preferable to use a TiO ₂ powder having an average particle size of 0.5 to 3 μm. The purity of the Al ₂ O ₃ powder, Mn ₂ O ₃ powder, MgO powder, and TiO ₂ powder is preferably 99% by mass or more. Thereby, the sheet formability is improved, the diffusion of Mn, Mg and Ti can be improved, the sinterability at a temperature of 1380 ° C. to 1420 ° C. can be enhanced, and Al ₂ released from mullite. Mn ₃ Al ₂ Si ₃ O ₁₂ and Mg ₂ formed from O ₃ and SiO ₂ and additives Mn ₂ O ₃ and MgO
The crystallization of Al ₄ Si ₅ O ₁₈ can be enhanced. In addition to the above oxide powder, Mg element may be added as carbonate, nitrate, acetate, etc. that can form an oxide by firing. Also in this case, it is preferable to mix so that Mg may be 1 to 10% by mass in terms of MgO with respect to 100% by mass of mullite powder.

Furthermore, the group of Ca, Sr, B, and Cr with respect to 100% by mass of mullite powder because the densification of the mullite sintered body and the simultaneous sinterability with the composite metal forming the internal wiring layer 12 are enhanced. One or more oxide powders selected from (CaO powder, SrO powder, B ₂ O ₃ powder, Cr ₂ O ₃ powder) or a powder composed of carbonate, nitrate, acetate capable of forming an oxide by firing, You may add in the ratio which does not change the thermal expansion coefficient of the ceramic wiring board for probe cards of this embodiment, and does not degrade chemical resistance.

  Next, an organic binder and a solvent are added to the mixed powder to prepare a slurry, and then a green sheet is produced by a molding method such as a press method, a doctor blade method, a rolling method, and an injection method. Alternatively, an organic binder is added to the mixed powder, and a green sheet having a predetermined thickness is produced by a method such as press molding or rolling. In addition, although the thickness of a green sheet can be 50-300 micrometers, for example, it is not specifically limited.

  Then, a through hole having a diameter of 50 to 250 μm is appropriately formed on the green sheet by a micro drill, a laser, or the like.

  Next, the conductor paste is filled into the through holes of the green sheet by screen printing. The conductor paste filled in the through-hole may be either one having a composition similar to the composition of the metal component of the conductor paste for the internal wiring layer to be described later or one containing W or Mo as 100% by volume and not containing Cu.

Next, the main component is a composite conductor powder obtained by mixing copper (Cu) powder and tungsten (W) powder or molybdenum (Mo) powder so that Cu is 40 to 60% by volume and W is 40 to 60% by volume. Add Al ₂ O ₃ powder.

By adding the Al ₂ O ₃ component, the alumina in the conductor paste diffuses into the insulating substrate 11 in contact with the conductor pattern during the firing process, and the mullite sintered body in which the alumina has diffused contains a large amount of alumina. Thus, the coefficient of thermal expansion of the mullite sintered body in the portion in contact with the internal wiring layer 12 can be increased. This phenomenon is melted when copper contained in a composite conductor having a melting point lower than that of Al ₂ O ₃ is 40% by volume or more is fired at a temperature equal to or higher than the melting point, and the molten copper turns the Al ₂ O ₃ powder into the internal wiring layer. This is because the material is extruded from 12 to the ceramic insulating layers 11a to 11d in contact therewith. This occurs when the composite conductor contains 40% by volume or more of copper. The Al ₂ O ₃ powder is extruded to the ceramic insulating layers 11a to 11d and then sintered with the sintering aid component for forming the mullite sintered body described above. By including the sintering aid component together with the Al ₂ O ₃ powder, the sinterability immediately adjacent to the conductor pattern can be further improved. As a sintering aid component, it is used from Mn, Ti, Mg, Si, etc., but from the viewpoint of improving the sinterability more effectively and suppressing the deterioration of the substrate strength and the deterioration of the chemical resistance. Particularly preferably used. At this time, it is preferable to add the components of Mn, Ti, Mg, and Si as oxides of Mn ₂ O ₃ , MgO, TiO ₂ , and SiO ₂ , and the optimum addition range of each is Al ₂ O ₃ 100 mass. It is 1-5 mass% with respect to%. These powders are mixed with a composite conductor powder to prepare a conductor paste for internal wiring, and printed and applied by a method such as screen printing or gravure printing to form a wiring pattern.

  Next, after stacking a plurality of green sheets on which a coating film is formed to form a laminate, the laminate is fired in a non-oxidizing atmosphere (nitrogen atmosphere or a mixed atmosphere of nitrogen and hydrogen).

  Here, the maximum temperature during firing is preferably set to 1380 ° C. to 1420 ° C. By setting the maximum temperature during firing to 1380 ° C. to 1420 ° C., most of the alumina diffusing from the internal wiring layer 12 to the insulating base 11 side is stopped by the ceramic insulating layers 11a to 11d in contact with the internal wiring layer 12. As a result, the first region 11B can be formed around the internal wiring layer 12 with more alumina than the second region 11B which is the main layer of the ceramic insulating layers 11a to 11d.

When the maximum temperature during firing is 1380 ° C. to 1420 ° C., nucleation of crystals of Mn ₃ Al ₂ Si ₃ O ₁₂ and Mg ₂ Al ₄ Si ₅ O ₁₈ occurs in the grain boundary phase of the mullite sintered body. The mullite sintered body can be densified while being promoted.

In the case of manufacturing a ceramic circuit board for probe card of the present embodiment, the grain boundary phase of mullite sintered body, to precipitate Mg ₂ Al ₄ Si ₅ O ₁₈ and _Mn 3 _Al 2 _Si 3 _{O 12} insulation For increasing the chemical resistance of the substrate 11, the rate of temperature increase from 1000 ° C. to the highest firing temperature is preferably 50 ° C./hr to 150 ° C./hr, and particularly preferably 75 ° C./hr to 100 ° C./hr. The rate of temperature decrease from the highest firing temperature to 1000 ° C. is preferably 50 ° C./hr to 300 ° C./hr, particularly 50 ° C./hr to 100 ° C./hr.

  Furthermore, the firing atmosphere is a non-oxidizing atmosphere containing hydrogen and nitrogen and having a dew point of not higher than + 30 ° C., particularly not higher than + 25 ° C., for the purpose of suppressing diffusion of Cu in the internal wiring layer 12. Is desirable. If the dew point during firing is higher than + 30 ° C., oxide ceramics react with moisture in the atmosphere during firing to form an oxide film, and this oxide film and copper react to reduce the resistance of the conductor. This is not only a hindrance, but also promotes the diffusion of Cu. Note that an inert gas such as argon gas may be mixed in this atmosphere as desired.

  The probe card ceramic wiring board manufactured by the method described above has an internal wiring layer 12 containing copper and tungsten or molybdenum as main components, and there is no separation between the insulating substrate 11 and the internal wiring layer 12, and thermal expansion is achieved. The coefficient is close to the thermal expansion coefficient of the Si wafer to be inspected and the chemical resistance is excellent.

(Second Embodiment)
Next, a second embodiment of the ceramic wiring board for probe card according to the present invention will be described with reference to FIG. A ceramic wiring board for a probe card shown in FIG. 2 includes an insulating base 11 made of a sintered body (mullite sintered body) having mullite particles as main crystal particles, a low resistance metal formed inside the insulating base 11, and It has an internal wiring layer 12 made of a composite conductor containing a refractory metal as a main component and a surface wiring layer 13 formed on the surface of the insulating base 11, and the internal wiring layers 12 in the insulating base 11 or A via-hole conductor 14 that electrically connects the internal wiring layer 12 and the surface wiring layer 13 is provided.

  The insulating base 11 is formed by laminating a plurality of ceramic insulating layers 11a, 11b, 11c, and 11d (hereinafter referred to as 11a to d) made of a mullite sintered body.

When the ceramic insulating layers 11a to 11d are mullite sintered bodies, the thermal expansion coefficient (room temperature to 300 ° C.) of the ceramic insulating layers 11a to 11d can be 4.5 × 10 ⁻⁶ / ° C. or less. As a result, the probe card ceramic wiring board of the present embodiment has no misalignment between the measurement terminals provided on the probe card ceramic wiring board and the measurement pads formed on the surface of the Si wafer during the thermal load test. Therefore, it can be suitably used for inspection of electrical characteristics.

  Here, in the ceramic wiring board for probe card of this embodiment, when some ceramic insulating layers 11a to 11d of the ceramic insulating layers 11a to 11d are measured by using X-ray diffraction, the main peak intensity of mullite. A first region 11A in which the main peak intensity ratio of alumina is 0.4 or more and a second region 11B in which the main peak intensity ratio of alumina to the main peak intensity of mullite is 0.3 or less; It has become.

  When the ceramic insulating layers 11a to 11d having a region containing a large amount of alumina are disposed in the insulating base 11, the insulating base 11 constituting the probe card ceramic wiring board can be reduced in thermal expansion and strength. In this embodiment, the insulating substrate 11 is composed of ceramic insulating layers 11a to 11d having mullite particles having a small thermal expansion coefficient as main crystal particles, and contains a large amount of alumina components having high mechanical strength. This is because the ceramic insulating layers 11a to 11d including the sintered body (first region 11A) are composited.

  In particular, the ceramic wiring board for probe card of the present embodiment contains a large amount of alumina in that the mechanical strength of the ceramic wiring board for probe card can be increased and the separation from the internal wiring layer 12 can be prevented. It is desirable that the ceramic insulating layers 11 a to 11 d including one region 11 </ b> A are adjacent to each other so as to cover the internal wiring layer 12.

  In the insulating substrate 11 according to the present embodiment, the first region 11A containing a large amount of alumina includes a crystal phase of alumina together with main crystal particles mainly composed of mullite. In this case, the first region 11A contains more alumina crystal phase than the second region 11B. Further, the mullite particles as the main crystal particles means that, in the crystal phase constituting the sintered body, the area ratio of the mullite particles in the cross section after etching the glass component is 80% or more. Say a case.

In the present embodiment, the ceramic insulating layers 11a to 11d are formed on the surface of the ceramic insulating layer having mullite particles as the main crystal particles, on the surface of the ceramic insulating layer made of alumina particles (coefficient of thermal expansion is about 7 × 10 ⁻⁶ / (° C.) is not bonded, and layers having greatly different coefficients of thermal expansion are not bonded adjacent to the ceramic insulating layers 11a to 11d having mullite particles as main crystal particles. Therefore, between the ceramic insulating layers 11a to 11d including the first region 11A containing a large amount of alumina and the ceramic insulating layers 11a to 11d including the second region 11B having a smaller amount of alumina than the first region 11A. Since a rapid difference in thermal expansion coefficient does not easily occur, separation (peeling) between the ceramic insulating layers 11a to 11d including the first region 11A and the ceramic insulating layers 11a to 11d including the second region 11B can be prevented. .

In this case, the thermal expansion coefficient of the insulating substrate 11 is 3.4 × 10 ^{−6 to} 4.5 × 10 ⁻⁶ / ° C. because the deviation from the position of the measurement pad formed on the surface of the Si wafer can be reduced. It is desirable that

  In addition, the mullite particles constituting the ceramic insulating layers 11a to 11d in the present embodiment are present as particulate or columnar crystals, and the average particle size of the mullite particles is 1.0 to 5.0 μm, particularly 1. It is desirable that the thickness is 7 to 2.5 μm. Thereby, the thermal conductivity of the insulating substrate 11 can be increased, and the mechanical strength can be increased.

  Here, the mechanical strength is obtained by processing the insulating substrate 11 cut out from the ceramic wiring board into a size of 40 mm in length, 4 mm in width, and 2.5 mm in thickness, and performing a three-point bending test using an autograph.

  In addition, the average particle diameter of any mullite particles is such that a part of the insulating substrate 11 is polished, a photograph of the internal structure is taken using a scanning electron microscope for the etched sample, and about 50 circles are placed on the photograph. Draw and select the crystal particles that fall within and around the circle, then image-process the outline of each crystal particle to determine the area of each crystal particle, and calculate the diameter when replaced with a circle with the same area And the average value is obtained. In addition, the molar ratio of alumina and silica of each particle of the mullite particles is obtained by a transmission electron microscope or a scanning electron microscope equipped with elemental analysis using a sample for obtaining an average particle diameter.

  In the probe card wiring board of the present embodiment, the average thickness of the ceramic insulating layers 11a to 11d including the first region 11A containing a large amount of alumina is other ceramic insulating layers not including the first region 11A. The thickness is preferably 10 to 30% of the average thickness of 11a to d.

In the probe card wiring board of the present embodiment, when the average thickness of the ceramic insulating layers 11a to 11d constituting the insulating base 11 is within the above range, the thermal expansion coefficient of the insulating base 11 is 3.4 × 10 ⁻⁶ to 4. 2 × 10 ⁻⁶ / ° C. can be achieved, and the mechanical strength can be 250 MPa or more.

  The average thickness of the ceramic insulating layers 11a to 11d is obtained from an average value obtained by measuring the thickness of the ceramic insulating layers between the internal wiring layers in the central portion of the main surface of the probe card ceramic wiring board. Specifically, the distribution of alumina is measured for the cross section of the insulating substrate 11 using a scanning electron microscope equipped with elemental analysis, and 10 locations are measured for each of the ceramic insulating layers 11a to 11d in regions having different alumina distributions. Find the average value.

  The confirmation of the first region 11A containing a large amount of alumina between the ceramic insulating layers 11a to 11d can also be obtained by applying an X-ray to this region to identify the crystal phase and calculating the lattice constant.

In addition, the mullite sintered body constituting the ceramic insulating layers 11a to 11d in the second embodiment also has a main crystal phase of mullite and the same as in the case of the ceramic wiring board of the first embodiment. It is desirable that all of the mullite particles constituting the ceramic insulating layers 11a to 11d contain Mn as a sintering aid. It becomes possible to sinter mullite at a low temperature of 1380 ° C. to 1420 ° C. At this time, Mn may be present in the residual glass phase present in the grain boundary phase after sintering, but Mn ₃ Al ₂ from the viewpoint of improving chemical resistance and substrate strength of the probe card ceramic wiring board. It is preferably present as Si ₃ O ₁₂ . Furthermore, as a component other than Mn, at least one selected from Ti and Mg may be contained to such an extent that characteristics such as chemical resistance, substrate strength, and density are not impaired. At this time, when the X-ray diffraction intensity of the (210) plane of mullite is 100%, the X-ray diffraction intensity of the (222) plane of Mg ₂ Al ₄ Si ₅ O ₁₈ is 0.2 to 0.7%. Yes, the (420) plane X-ray diffraction intensity of Mn ₃ Al ₂ Si ₃ O ₁₂ is 0.2 to 0.7%, and substantially does not contain MnAl ₂ O ₄ and MgAl ₂ O ₄ Is desirable. Thereby, chemical resistance can be improved. Here, the fact that the mullite sintered body does not contain MnAl ₂ O ₄ and MgAl ₂ O ₄ means that when X-ray diffraction is performed, MnAl ₂ O ₄ and MgAl ₂ on the X-ray diffraction diagram. The diffraction intensity of each main peak of O ₄ is less than the noise level of the X-ray diffraction pattern.

  The internal wiring layer 12 that constitutes the probe card ceramic wiring board of the present embodiment also has a composition in which copper is 40 to 60% by volume and at least one of Mo and W is 40 to 60% by volume. It consists of

  Examples of the material for forming the internal wiring layer 12 that can be fired simultaneously with the mullite sintered body include tungsten (W) or molybdenum (Mo), which is a refractory metal, but the inside made of tungsten (W) or molybdenum (Mo). The wiring layer 12 has a high electric resistance value. On the other hand, low resistance metals such as copper (Cu) have a melting point that is considerably lower than the firing temperature of ceramic sintered bodies containing mullite as a main component. It cannot be fired simultaneously with the body. Therefore, by making the internal wiring layer 12 a composite conductor of copper and tungsten (or molybdenum), although the electrical resistance value is somewhat higher than that of copper alone, mullite is formed at a firing temperature of 1380 ° C. to 1420 ° C. described later. Simultaneous firing with a ceramic sintered body as a main component becomes possible.

  However, even if simultaneous firing is possible, since firing is performed at a temperature exceeding the melting point of copper, it is necessary to suppress the melting of copper and maintain the shape of the internal wiring layer 12. Therefore, in order to achieve both low resistance and shape retention of the internal wiring layer 12, the ratio of the low melting point metal is 40-60% by volume and the high melting point metal is 40-60% by volume.

  The surface wiring layer 13 may have the same composition as the internal wiring layer 13 or may be different, and may be formed only of Mo or W which is a refractory metal.

  Further, it is desirable that the via-hole conductor 14 has the same composition as that of the surface wiring layer 13 in order to prevent the conductor component from dropping off from the via-hole conductor 14 during firing.

  The above-described ceramic wiring board for probe card according to the present embodiment has the positions of the measurement terminals (probe pins) provided on the ceramic wiring board for probe card and the measurement pads formed on the surface of the Si wafer during the thermal load test. Deviation can be suppressed and it can be suitably used for inspection of electrical characteristics. Further, when at least one of the ceramic insulating layers 11a to 11d constituting the insulating base is composed of the ceramic insulating layers 11a to 11d including the first region 11A containing a large amount of alumina, the substrate strength is excellent. .

  Next, a method for manufacturing the above-described probe card ceramic wiring board will be described.

  The ceramic wiring board for a probe card of the second embodiment can use the same process as that of the first embodiment described above except that a coating film containing a large amount of alumina is formed on the surface of the green sheet.

That is, in the second embodiment, a coating film containing a large amount of alumina is formed on the surface of the green sheet on which the internal wiring pattern and the via-hole conductor are formed, using a coating paste containing the following ceramic component. This coating paste comprises 5 to 100% by mass of Al ₂ O ₃ powder, 0 to 90% by mass of mullite powder, 0 to 10% by mass of Mn ₂ O ₃ powder, M
It is prepared by adding 0 to 5% by mass of gO powder and mixing an organic binder and a solvent.

The coating paste for forming this coating film is obtained by adding Al ₂ O ₃ powder, so that the mullite sintered body contains a large amount of alumina, so that the mullite in the portion in contact with the internal wiring layer 12 is obtained. The thermal expansion coefficient of the sintered body can be increased.

  The thermal expansion coefficient of the insulating substrate 11 is affected by changing the thickness of the coating film by a predetermined amount with respect to the thickness of the ceramic insulating layers 11a to 11d having mullite particles forming the insulating substrate 11 as main crystal particles. The mechanical strength of the insulating substrate 11 can be improved without any problems. Moreover, you may add Mn, Ti, Mg, Si, etc. which are contained in a green sheet as a sintering aid to the coating paste for coating films.

  Next, after stacking a plurality of green sheets on which a coating film has been formed to form a laminate, the laminate is fired under the same firing conditions as in the first embodiment. Thereby, the ceramic insulating layers 11a to 11d including the first region 11A containing a large amount of alumina can be formed.

  The probe card ceramic wiring board manufactured by the method described above has an internal wiring layer 12 containing copper and tungsten or molybdenum as main components, and there is no separation between the insulating substrate 11 and the internal wiring layer 12, and thermal expansion is achieved. The coefficient is close to the thermal expansion coefficient of the Si wafer to be inspected and has high mechanical strength.

With respect to 100% by mass of mullite powder having a purity of 99% and an average particle size of 2.0 μm, Mn ₂ O ₃ powder having a purity of 99% and an average particle size of 1.5 μm is 4% by mass, and the purity is 99%. After mixing TiO ₂ powder with an average particle diameter of 2.0 μm at a ratio of 2% by mass, an acrylic binder as an organic resin for molding (organic binder) and toluene as an organic solvent are mixed to prepare a ceramic slurry. After that, it was molded into a sheet shape having a thickness of 200 μm by a doctor blade method to produce a green sheet.

  The obtained green sheet was punched to form a through hole having a diameter of 200 μm. An acrylic binder is used for a powder obtained by mixing 95% by mass of Mo powder having a purity of 99.9% and an average particle size of 1.2 μm and 5% by mass of alumina powder having a purity of 99.9% and an average particle size of 1.8 μm. And acetone as a solvent were mixed to prepare a conductor paste mainly composed of Mo, and this conductor paste was filled into the through holes of the green sheet by a screen printing method.

  Further, a surface wiring layer was formed on the front surface of the green sheet as the uppermost layer and the back surface of the green sheet as the lowermost layer by the screen printing method using the above-described conductor paste containing Mo as a main component.

Also, Cu powder with an average particle diameter of 2 μm, W powder with an average particle diameter of 2 μm, purity of 99% or more, Al ₂ O ₃ powder with an average particle diameter of 1.0 μm, purity of 99% or more, Mn _{2 with} an average particle diameter of 1.5 μm According to the composition ratio shown in Table 1 using O ₃ powder, an acrylic binder and acetone were mixed as a solvent to prepare a conductor paste for an internal wiring layer.

  And the internal wiring pattern used as an internal wiring layer after baking was formed by the screen printing method so that the green sheet which forms an internal wiring layer might cover the substantially whole surface of one main surface. Here, the almost entire surface means 95% of the area of one main surface of the green sheet.

  Next, 15 layers of green sheets each having a through hole filled with a conductive paste mainly composed of Mo and having an internal wiring pattern and a coating film formed on the main surface were pressure-bonded to form a laminate.

  At this time, 12 evaluation patterns having a line width of 100 μm and a length of 20 mm are formed in a part of the internal wiring pattern for wiring width measurement, and the internal wiring pattern is connected to the via-hole conductor, A land pattern was formed at the end of the internal wiring pattern for connection to the via-hole conductor. The green sheets thus produced were aligned and laminated and pressed to produce a laminate. In the laminate produced here, a green sheet provided with pads for contacting measurement terminals for resistance measurement is arranged on the uppermost layer, and an internal wiring pattern and land pattern for resistance measurement are arranged on the second layer. Is arranged so that the green sheet coated with printing is placed and the through hole (filled with Mo conductor paste) provided in the uppermost layer is electrically connected to the land coated with printing on the second layer. , Aligned.

  Next, the manufactured laminate was degreased in a nitrogen-hydrogen mixed atmosphere with a dew point of + 25 ° C. at a temperature from room temperature to 600 ° C., and then fired. Firing is performed at a heating rate of 40 ° C./hour from 1000 ° C. to the maximum temperature, held in a nitrogen-hydrogen mixed atmosphere with a dew point of + 25 ° C. at a maximum temperature of 1400 ° C., and then from the maximum temperature. A ceramic wiring substrate was obtained by cooling to 1000 ° C. at a rate of temperature decrease of 60 ° C./hour. The structure of the ceramic wiring board having such an internal wiring layer was designated as structure 1.

  In addition, all the structures 1 except that the internal wiring layer was printed on the green sheet forming the internal wiring layer using a screen plate having a predetermined pattern so as to occupy an area of 70% of one main surface. A laminate having the same structure was prepared. This laminated body was also fired under the same conditions as those of the ceramic wiring board of structure 1 to produce a ceramic wiring board. The structure of the substrate having such an internal wiring layer was designated as structure 2. The substrate of structure 2 is a substrate in which a first region having a high alumina content exists so as to surround the periphery of the internal wiring layer after firing.

  Next, the following evaluation was performed about the obtained ceramic wiring board for probe cards.

  The cross section of the ceramic wiring board having structure 1 and structure 2, which is a ceramic wiring board having an internal wiring layer, cut perpendicularly to the main surface is polished, and the internal wiring layer 12 is exposed to the insulating layer. The peak ratio of alumina to mullite was determined by applying X-rays to the vicinity of the interface with the internal wiring layer (interface part) and the central part (porcelain part) in the thickness direction of the insulating layer between the internal wiring layers adjacent to each other in the stacking direction. .

  Further, the separation of the internal wiring layer in the insulating substrate was evaluated by observing the side surfaces of the substrates of Structure 1 and Structure 2 after firing and after a heat resistance test (held at 350 ° C. for 10 minutes).

  Further, as an indicator of chemical resistance, the initial mass of the mullite sintered body and the mass of the mullite sintered body after being immersed in a 40% by weight aqueous solution of potassium hydroxide at 100 ° C. for 5 hours were measured, and the weight decreased. Ratio (“initial mass of mullite sintered body” − “mass of mullite sintered body after being immersed in 40% by weight aqueous solution of potassium hydroxide at 100 ° C. for 5 hours”) / “initial stage of mullite sintered body” The “mass” × 100 [%] was calculated. Here, the chemical resistance was judged good when the weight change rate was 0.12% by mass or less. The prepared samples had good chemical resistance.

The wiring resistance is a resistance represented by the relational expression: R × W / L, where R is the resistance of the conductor obtained by measurement, L is the total length of the internal wiring layer to be measured, and W is the width of the internal wiring layer. It calculated | required as a value (it is called sheet resistance. A unit is mohm / square). The electrical resistance was measured by a four-terminal method using a digital multimeter. At this time, the wiring resistance was determined to be 4.0 mΩ / □ or less in terms of sheet resistance.

  The thermal expansion coefficients of the porcelain part and interface part constituting the insulating substrate and the internal wiring layer were measured. For the porcelain portion and the interface portion constituting the insulating base, a sample obtained by separately producing a mullite sintered body based on the composition obtained by X-ray diffraction was used as a sample. Also for the internal wiring layer, an ingot prepared separately under the same firing conditions based on the composition obtained by ICP analysis was used.

  Next, the probe pin that is the measurement terminal of the probe card is brought into contact with the upper surface of the Si wafer placed on the stage and held at a temperature of 90 ° C., using a stereomicroscope from the side of the probe card, The positional deviation between the probe pin and the measurement pad formed on the surface of the Si wafer was observed. In this case, when the measurement terminal (probe pin) and the measurement pad formed on the outermost periphery of the probe card and the Si wafer are observed, the tip of the measurement terminal (probe pin) is displaced laterally from the measurement pad. Was assumed to be misaligned. There was no misalignment in the fabricated probe card.

The content of copper and tungsten in the internal wiring layer constituting the obtained wiring board was determined by performing ICP analysis to determine the amount of each metal by mass ratio, and then the density of each metal (copper: 8.9 g / cm ^2). And tungsten: 19.1 g / cm ² ). These results are shown in Table 1.

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As is clear from the results in Table 1, the samples of the present invention (Nos. 1-2 to 1-13 and 1-1)
In 5), there was no sample in which separation with the internal wiring layer occurred in the fired insulating substrate.

  In particular, the substrate sample (No. 1-15) in which mullite particles having a high alumina content exist so as to surround the inner wiring layer after firing had no separation even after the heat resistance test.

  On the other hand, Sample No. which is outside the scope of the present invention. As for 1-1, 1-14, and 1-16, peeling occurred at the interface between the insulating base and the composite conductor after firing.

With respect to 100% by mass of mullite powder having a purity of 99% and an average particle size of 2.0 μm, Mn ₂ O ₃ powder having a purity of 99% and an average particle size of 1.5 μm is 4% by mass, and the purity is 99%. After mixing TiO ₂ powder with an average particle diameter of 2.0 μm at a ratio of 2% by mass, an acrylic binder as an organic resin for molding (organic binder) and toluene as an organic solvent are mixed to prepare a ceramic slurry. After that, it was molded into a sheet shape having a thickness of 200 μm by a doctor blade method to produce a green sheet.

  The obtained green sheet was punched to form a through hole having a diameter of 200 μm. An acrylic binder is used for a powder obtained by mixing 95% by mass of Mo powder having a purity of 99.9% and an average particle size of 1.2 μm and 5% by mass of alumina powder having a purity of 99.9% and an average particle size of 1.8 μm. And acetone as a solvent were mixed to prepare a conductor paste mainly composed of Mo, and this conductor paste was filled into the through holes of the green sheet by a screen printing method.

  Further, a surface wiring layer was formed on the front surface of the green sheet as the uppermost layer and the back surface of the green sheet as the lowermost layer by the screen printing method using the above-described conductor paste containing Mo as a main component.

Also, Cu powder with an average particle diameter of 2 μm, W powder with an average particle diameter of 2 μm, purity of 99% or more, Al ₂ O ₃ powder with an average particle diameter of 1.0 μm, purity of 99% or more, Mn _{2 with} an average particle diameter of 1.5 μm Using O ₃ powder, Cu and W were each 50% by volume, and an acrylic binder and acetone were mixed as a solvent to prepare a conductor paste for an internal wiring layer.

  Then, the internal wiring layer is formed after firing by screen printing so as to cover almost the entire main surface of one of the green sheets filled with a conductive paste mainly composed of Mo in the through holes (via hole conductors are formed). An internal wiring pattern was formed. Here, the almost entire surface means 95% of the area of one main surface of the green sheet.

Next, the following coating paste is printed on the surface of the green sheet on which the via-hole conductor is formed and the internal wiring pattern is formed on the main surface, and after firing, at least one of the ceramic insulating layers is rich in alumina. A coating film to be a ceramic insulating layer including the first region was formed. The coating paste used was an Al ₂ O ₃ powder with an average particle size of 1.0 μm, a purity of 99% or more, an Mn ₂ O ₃ powder with an average particle size of 1.5 μm, an Si ₂ O powder with an average particle size of 1.5 μm, an average A mullite powder having a particle size of 2.0 μm was blended so as to have a composition ratio shown in Table 2, and an acrylic binder and acetone were mixed as a solvent to prepare this.

Next, for the green sheet on which the internal wiring pattern and the via-hole conductor are formed, a screen pattern is used so as to cover the internal wiring pattern by using a printing pattern with a screen not to print only the via-hole conductor portion. A coating film was formed.

  In addition, 12 evaluation patterns having a line width of 100 μm and a length of 20 mm are formed in a part of the internal wiring pattern to measure the wiring width, and the internal wiring pattern is connected to the via-hole conductor. A land pattern was formed at the end of the wiring pattern for connection to the via-hole conductor. The green sheets thus produced were aligned and laminated and pressed to produce a laminate. In the laminate produced here, a green sheet provided with pads for contacting measurement terminals for resistance measurement is arranged on the uppermost layer, and an internal wiring pattern and land pattern for resistance measurement are arranged on the second layer. Is arranged so that the green sheet coated with printing is placed and the through hole (filled with Mo conductor paste) provided in the uppermost layer is electrically connected to the land coated with printing on the second layer. , Aligned, and 30 sheets of green sheets are laminated.

  Next, the manufactured laminate was degreased in a nitrogen-hydrogen mixed atmosphere with a dew point of + 25 ° C. at a temperature from room temperature to 600 ° C., and then fired. Firing is performed at a heating rate of 40 ° C./hour from 1000 ° C. to the maximum temperature, held in a nitrogen-hydrogen mixed atmosphere with a dew point of + 25 ° C. at a maximum temperature of 1400 ° C., and then from the maximum temperature. A ceramic wiring substrate was obtained by cooling to 1000 ° C. at a rate of temperature decrease of 60 ° C./hour. The structure of the probe card ceramic wiring board having such an internal wiring layer was designated as structure 1.

  In addition, all the structures 1 except that the internal wiring layer was printed on the green sheet forming the internal wiring layer using a screen plate having a predetermined pattern so as to occupy an area of 70% of one main surface. A laminate having the same structure was prepared. This laminate was also fired under the same conditions as the probe card ceramic wiring board of Structure 1 to produce a probe card ceramic wiring board. The structure of the substrate having such an internal wiring layer was designated as structure 2.

  Next, the following evaluation was performed on the obtained ceramic wiring board.

  The identification of the ceramic insulating layer including the first region or the second region having different contents of alumina is performed on the main surface of the ceramic wiring substrate for the probe card of the structure 1 and the structure 2 which are ceramic wiring substrates having an internal wiring layer. On the other hand, the cross section cut perpendicularly was polished, and the internal wiring layer was exposed. X-rays were applied to the internal wiring layer and the ceramic insulating layer to determine the peak ratio of alumina to mullite. In Table 2, ceramic insulating layers having different alumina contents are shown as a first region and a second region.

  The separation (peeling) of the internal wiring layer in the insulating substrate was evaluated by observing the cross sections of the substrates of Structure 1 and Structure 2 after firing and after a heat resistance test (350 ° C., 10 minutes hold).

  The average thickness of the ceramic insulating layer including the first region or the second region was obtained from an average value obtained by measuring the thickness of the ceramic insulating layer between the internal wiring layers at the center of the main surface of the probe card ceramic wiring board. Specifically, the distribution of alumina is measured for the cross section of the insulating substrate using a scanning electron microscope equipped with elemental analysis, and three ceramic insulating layers in different areas of the alumina distribution are selected, and 10 portions are selected. The thickness was measured and the average value was obtained.

  The mechanical strength was determined by processing a three-point bending test using an autograph after processing the insulating base cut out from the produced probe card ceramic wiring board into a size of 40 mm in length, 4 mm in width, and 2.5 mm in thickness. . The number of samples was 10 and the average value was obtained.

The chemical resistance is measured by measuring the initial mass of the mullite sintered body and the mass of the mullite sintered body after being immersed in a 40% by weight aqueous solution of potassium hydroxide at 100 ° C. for 5 hours. Ratio (“initial mass of mullite sintered body” − “mass of mullite sintered body after being immersed in 40% by weight aqueous solution of potassium hydroxide at 100 ° C. for 5 hours”) / “initial stage of mullite sintered body” The “mass” × 100 [%] was calculated. Here, the chemical resistance was judged good when the weight change rate was 0.12% by mass or less, but all the samples were good.

  The wiring resistance is a resistance represented by the relational expression: R × W / L, where R is the resistance of the conductor obtained by measurement, L is the total length of the internal wiring layer to be measured, and W is the width of the internal wiring layer. It calculated | required as a value (it is called sheet resistance. A unit is mohm / square). The electrical resistance was measured by a four-terminal method using a digital multimeter. At this time, the wiring resistance was determined to be 4.0 mΩ / □ or less in terms of sheet resistance.

  The thermal expansion coefficients of the insulating base, the ceramic insulating layer including the first region constituting the insulating base, the ceramic insulating layer including the second region, and the internal wiring layer are X-ray diffraction or scanning electron. A sample prepared separately from a mullite sintered body based on the composition obtained by an element analyzer attached to the microscope was used as a sample. Also for the internal wiring layer, an ingot prepared separately under the same firing conditions based on the composition obtained by ICP analysis was used.

  Next, the probe pin that is the measurement terminal of the probe card is brought into contact with the upper surface of the Si wafer placed on the stage and held at a temperature of 90 ° C., using a stereomicroscope from the side of the probe card, The positional deviation between the probe pin and the measurement pad formed on the surface of the Si wafer was observed. In this case, when the measurement terminal (probe pin) and the measurement pad formed on the outermost periphery of the probe card and the Si wafer are observed, the tip of the measurement terminal (probe pin) is displaced laterally from the measurement pad. Was assumed to be misaligned. There was no misalignment in the fabricated probe card.

The content of copper and tungsten in the internal wiring layer constituting the obtained wiring board was determined by performing ICP analysis to determine the amount of each metal by mass ratio, and then the density of each metal (copper: 8.9 g / cm ^2). , Tungsten: 19.1 g / cm ² ), which was found to match the blending ratio shown in Table 2. Table 2 shows the case where the volume ratio of copper and tungsten is the same, but copper is 40% by volume and tungsten is 60% by volume, or copper is 60% by volume and tungsten is 40% by volume. As for sample No. in Table 2. Results similar to those of 2-1 to 20 were obtained.

  As is clear from the results in Table 2, in the samples of the present invention (Nos. 2-1 to 2-6 and 2-8 to 2-19), the separation with the internal wiring layer was observed in the fired insulating substrate. None, the thermal expansion coefficient of the insulating substrate was 3.4 to 4.5, and the strength of the substrate was 240 MPa or more.

  In particular, a sample (sample No. No. 2-) in which the average thickness of the ceramic insulating layer including the first region containing a large amount of alumina is 10 to 30% of the average thickness of the ceramic insulating layer including the second region. 1-2-6, 2-8-2-16 and 2-18), there is no separation from the internal wiring layer in the fired insulating substrate, and the thermal expansion coefficient of the insulating substrate is 3.4-4. 2 and the strength of the substrate was 250 MPa or more.

1: Ceramic wiring board for probe card 11: Insulating substrate 11A: Mullite particles 11B: Mullite particles containing a lot of alumina 12: Internal wiring layer 13: Surface wiring layer 14: Via hole conductor 2: Probe card 21: Measurement terminal

Claims (4)

A ceramic wiring for a probe card comprising an internal wiring layer containing 40 to 60% by volume of copper and 40 to 60% by volume of at least one of tungsten or molybdenum inside an insulating base made of a mullite sintered body. A substrate,
The mullite sintered body has a first region present in at least part of the periphery of the internal wiring layer and a second region other than the first region,
When measured by X-ray diffraction, the ratio of the main peak intensity of alumina to the main peak intensity of mullite in the first region is 0.4 or more, and the alumina relative to the main peak intensity of mullite in the second region The ratio of the main peak intensities is 0.3 or less.   2. The probe card ceramic wiring board according to claim 1, wherein the first region exists so as to surround the entire periphery of the internal wiring layer.   The insulating base is configured by laminating a plurality of ceramic insulating layers made of the mullite sintered body, and the ceramic insulating layer including the first region contains more alumina than the other ceramic insulating layers. The ratio of the main peak intensity of alumina to the main peak intensity of mullite when the ceramic insulating layer including the first region is measured by X-ray diffraction is 0.4 or more. The ceramic wiring board for probe cards according to 1 or 2.   4. The probe card ceramic wiring according to claim 3, wherein an average thickness of the ceramic insulating layer including the first region is 10 to 30% of an average thickness of the other ceramic insulating layers. 5. substrate.

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