JP2011253939A - Wafer dicing method, connecting method, connecting structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wafer dicing method making the peeling property of a protection film after machining a wafer good.SOLUTION: The wafer dicing method comprises a pasting step S1 of pasting a surface of the protection film 24 of a wafer 39 with an adhesive film, made by successively laminating adhesive layers 22 and the protection films 24 on one surface 10a of a wafer 10, to a dicing tape 18; an image pick-up step S2 of picking up an image of the one surface 10a of the wafer in the wafer with the adhesive film from the other surface 39b side of the wafer 39 with the adhesive film; a dividing position deciding step S3 of deciding a position dividing the wafer 39 with the adhesive film on the basis of the image picked up in the image pick-up step S2; a cutting groove forming step S4 of forming a plurality of chips 60 with the adhesive films equipped with chips 64 with adhesive layers and the protection films 24 on the basis of the position decided by the diving position deciding step S3; and a pick-up step S5 of picking up the chips 64 with the adhesive layers from the chips 60 with the adhesive films.

Description

  The present invention relates to a wafer dicing method, a connection method, and a connection structure for dicing a wafer with an adhesive film in which an adhesive layer and a protective film are sequentially laminated on the surface of a wafer having a circuit pattern.

  In the semiconductor field, when an IC (Integrated Circuit) is mounted on a substrate, a material for fixing the IC is required. This material is generally a film-like or paste-like resin agent (for example, an adhesive, a sealant, etc.), and is finally filled between the IC and the substrate and solidified. Fix it.

  A film-like material, for example, a die attach film, an ACF (Anisotropic Conductive Film), an NCF (Non Particle Conductive Film), or the like needs to be cut according to the size of the IC.

  Also, since there are many advantages in production compared with a method in which an adhesive layer (for example, NCF) is applied on an electrode of a substrate and an IC is flip-chip bonded, a wafer dicing method has been promoted.

  As a normal wafer dicing method, an adhesive layer is pasted on the wafer surface (functional surface on which the circuit is drawn), a die attach film is installed on the back surface side of the wafer, and a cutting blade is inserted from the adhesive layer side. There is known a method of dividing a wafer into ICs (see, for example, Patent Document 1 and Patent Document 2). By using this method, an IC in which an adhesive layer is disposed on the functional surface side (bump side) of the IC can be obtained.

  Conventionally, dicing is performed by placing a wafer with an adhesive layer on a dicing tape with the wafer surface facing upward, and inserting a cutting blade from the wafer surface. This is because the circuit pattern on the wafer surface is read by a camera to perform alignment during dicing.

  Wafer dicing methods include “laser (Dry)”, “plasma (Dry)”, and “blade (Wet)”. Of these methods, the laser and plasma methods performed in a dry environment (dry environment) are advantageous in terms of contamination during processing. However, the apparatus used for these laser and plasma methods is not common and the apparatus cost is three times or more that of the blade. For this reason, the “blade” is the most common construction method.

  When dicing a wafer to which ACF or NCF is attached by normal blade dicing, a matter of concern is contamination. This is because the ACF and NCF are on the functional surface side of the wafer, and if there is contamination of foreign matter, there is a possibility that problems such as breakage of the functional surface of the IC and occurrence of short circuit may occur during crimping. In order to avoid this possibility, when a protective film is used on the surface of ACF or NCF, there is a problem of workability that the film is peeled off during dicing. In addition, since the protective film is also divided (separated into pieces) together with the IC, there is a problem of releasability that it is difficult to remove the protective film in the process of removing the protective film, and the protective film is not peeled off. .

JP 2009-135348 A JP 2008-141135 A

  The present invention has been proposed in view of such a conventional situation, and a wafer dicing method, a connection method, and a connection structure that can improve the peelability of a protective film after processing a wafer. The purpose is to provide.

  In the wafer dicing method according to the present invention, the surface of the protective film of the wafer with the adhesive film in which the adhesive layer and the protective film are sequentially laminated on the one surface of the wafer having the circuit pattern on one surface is diced. A sticking step for sticking to a tape, an imaging step for picking up an image of one surface of the wafer in the wafer with an adhesive film from the other surface side of the wafer with an adhesive film, and an image picked up in the imaging step A split position determining step for determining a position for splitting the wafer with an adhesive film, and a position determined in the split position determining step on the wafer with the adhesive film on the other side of the wafer with the adhesive film. From the surface side to between the surface where the adhesive layer and the protective film are in contact and the surface where the protective film and the dicing tape are in contact A plurality of chips with an adhesive film comprising a chip with an adhesive layer in which the adhesive layer is laminated on the one surface of the chip having the circuit pattern on one surface and a protective film by forming a cutting groove. A cutting groove forming step to be formed; and a pickup step of picking up the chip with the adhesive layer from the chip with the adhesive film.

  In the connection method according to the present invention, the chip with the adhesive layer picked up by the wafer dicing method is pressure-bonded to a circuit board having an electrode through the adhesive layer, and the electrode and the circuit pattern of the chip with the adhesive layer are connected. A crimping step to perform.

  The connection structure according to the present invention is obtained by the above connection method.

  According to the present invention, since the wafer and the adhesive layer are cut and the protective film remains in an undivided state, the peelability of the protective film after processing the wafer can be improved.

It is a flowchart for demonstrating an example of the dicing method of the wafer which concerns on this Embodiment. It is the schematic which shows an example of the step which adhere | attaches a wafer on a jig | tool. It is the schematic which shows an example of the step which affixes an adhesive film on a wafer. It is the schematic which shows an example of the step which sticks the surface of the protective film of the wafer with an adhesive film on a dicing tape. It is a schematic diagram showing an example of a dicing machine on which a wafer with an adhesive film is placed. It is the schematic which shows an example of an imaging process and a division | segmentation position determination process. It is the schematic which shows an example of a cutting groove formation process. It is the schematic which shows an example of a pick-up process. It is a flowchart for demonstrating an example of the connection method which concerns on this Embodiment. It is the schematic which shows an example of a crimping | compression-bonding process. It is the schematic which shows an example of the connection structure crimped | bonded by the crimping | compression-bonding process. It is a flowchart for demonstrating an example of the dicing method of the wafer which concerns on other embodiment. It is the schematic which shows the other example of a crimping | compression-bonding process.

Hereinafter, an example of specific embodiments of a wafer dicing method, a connection method, and a connection structure to which the present invention is applied will be described in the following order with reference to the drawings.
1. 1. Wafer dicing method 1-1. Adhesion process 1-2. Imaging process 1-2-1. Dicing device 1-2-2. Imaging method 1-3. Division position determination step 1-4. Cutting groove forming step 1-5. 1. Pickup process Connection method and connection structure 2-1. Crimping process 3. Other Embodiment 4 Example

<1. Wafer dicing method>
As shown in FIG. 1, the wafer dicing method according to the present embodiment includes a sticking step S1, an imaging step S2, a division position determining step S3, a cutting groove forming step S4, and a pickup step S5. .

<1-1. Adhesion process>
As shown in FIGS. 2 and 3, in the bonding step S <b> 1, one surface (surface) 10 a (hereinafter, also referred to as “functional surface 10 a”) of the wafer 10 having the bumps 16 that are circuit patterns on one surface. In addition, the other surface 39b of the wafer 39 with the adhesive film in which the adhesive layer 22 and the protective film 24 having transparency are sequentially laminated is attached to the dicing tape 18. For example, the following process is performed in the sticking step S1.

  First, as shown in FIG. 2, the prepared wafer 10 is fixed to a jig 12.

  An example of the wafer 10 is a semiconductor wafer such as a silicon wafer. On one surface 10 a of the wafer 10, lattice-like scribe lines 14 are formed. Bumps 16 that are circuit patterns are formed on the functional surface 10 a of the wafer 10.

  The jig 12 includes, for example, a ring-shaped or frame-shaped frame 20 having a diameter larger than the diameter of the wafer 10 and a dicing tape 18 having one surface having adhesiveness.

  For example, the dicing tape 18 is affixed to one side of the frame 20 and is spread on the inside of the frame 20. For example, the wafer 10 is attached to the center of the jig 12. Further, the other surface 10 b of the functional surface 10 a of the wafer 10 is attached to the dicing tape 18. As the dicing tape 18, for example, an adhesive film whose peeling force is reduced by irradiating ultraviolet rays is used. Thereby, after dividing the wafer 10 into a plurality of chips 21, the chips 21 can be easily separated from the dicing tape 18 when the individual chips 21 are picked up by irradiating the dicing tape 18 with ultraviolet rays.

  Subsequently, as shown in FIG. 3, an adhesive film 26 in which a protective film 24 and an adhesive layer 22 are laminated is disposed on the functional surface 10 a of the wafer 10.

  The adhesive layer 22 includes, for example, a film forming resin, a liquid curable component, and a curing agent. The adhesive layer 22 may contain additives such as various rubber components, softeners, various fillers, and conductive particles, for example. The adhesive layer 22 may be NCF (Non Particle Conductive Film), ACF (Anisotropic Conductive Film), or a laminate thereof.

  Examples of the film forming resin include phenoxy resin, polyester resin, polyamide resin, and polyimide resin. The film-forming resin preferably contains a phenoxy resin from the viewpoint of easy availability of materials and connection reliability. Examples of the liquid curing component include liquid epoxy resins and acrylates. The liquid curing component preferably has two or more functional groups from the viewpoint of connection reliability and stability of the cured product. Examples of the curing agent include imidazole, amines, sulfonium salts, onium salts, and phenols when the liquid curing component is a liquid epoxy resin. When the liquid curing component is an acrylate, an organic peroxide can be exemplified as the curing agent.

  It is preferable that the thickness of the adhesive layer 22 be equal to or greater than the height of the bump 16. That is, the thickness of the adhesive layer 22 is preferably set to a thickness that can cover the bumps 16.

  The protective film 24 prevents cutting chips and the like from adhering to the adhesive layer 22 when the wafer 10 is divided using a dicing apparatus or the like. Examples of the protective film 24 include plastic materials such as polyester film and polyethylene terephthalate film, paper such as high-quality paper and glassine paper, and the like.

  The thickness of the protective film 24 is preferably in the range of 25 to 100 μm. When the thickness of the protective film 24 is less than 25 μm, the protective film 24 may be peeled off from the adhesive layer 22 during the process of dividing the wafer 10 using a dicing apparatus or the like. Compared with the case of 25 μm or more, the processability is inferior. When the thickness of the protective film 24 exceeds 100 μm, it is difficult to apply the adhesive layer 22 on the protective film 24 when the adhesive layer 22 is applied on the protective film 24 to produce the adhesive film 26.

  The peel force between the protective film 24 and the adhesive layer 22 is preferably 0.1 to 3.0 N / cm. Here, the peeling force between the protective film 24 and the adhesive layer 22 indicates, for example, the peeling force when T-type peeling is performed in the 180 degree direction based on JIS Z0237. When the peeling force between the protective film 24 and the adhesive layer 22 is less than 0.1 N / cm, for example, in the process of dividing the wafer using a dicing apparatus or the like, that is, in the middle of the cutting groove forming process S4, for example, protection A chip 64 with an adhesive film, which will be described later, may be peeled off from the film 24, and the workability is inferior compared with the case where the peeling force between the protective film 24 and the adhesive layer 22 is 0.1 N / cm or more. Moreover, when the peeling force between the protective film 24 and the contact bonding layer 22 exceeds 3.0 N / cm, the protective film 24 will remain partially peeled off by pick-up process S5, and peelability is not favorable. Furthermore, the peeling force between the protective film 24 and the adhesive layer 22 is more preferably 0.3 to 0.6 N / cm. Thereby, the workability in cutting groove formation process S4 and the peelability in pick-up process S5 can be made more favorable.

  The peeling force between the protective film 24 and the adhesive layer 22 can be adjusted by performing a release treatment on the surface of the protective film 24. The mold release treatment can be performed, for example, by applying a silicone release agent to the surface of the protective film 24 and then heating the protective film 24 to dry the protective film 24.

  The peeling force between the protective film 24 and the adhesive layer 22 may be smaller than the peeling force between the wafer 10 and the dicing tape 18 at the stage of bonding the wafer 10 to the jig 12 described with reference to FIG. Thereby, as will be described in detail later, it is possible to improve the peelability of the protective film 24 after processing the wafer 10 in the pickup step S5.

  Subsequently, for example, as illustrated in FIG. 3, the adhesive film 26 is attached to the wafer 10 using the pressing device 28.

  For example, the pressing device 28 includes a stage 30 and a head 32. For example, the wafer 30 is placed on the stage 30. Further, the wafer 10 is placed on the stage 30 while being held by the jig 12. Moreover, the stage 30 has the heating apparatus 34, for example. It should be noted that the heating device 34 need not be used at the stage of attaching the adhesive film 26 to the wafer 10.

  For example, as shown in FIG. 3, the head 32 includes a pressing member 36 and a holding portion 38 that holds the pressing member 36. The head 32 presses the pressing member 36 toward the stage 30 side. The pressing member 36 is made of an elastic body, for example. An elastomer such as silicone rubber can be used as the elastic body. Thereby, compared with a metal pressing member, the adhesive film 26 can be uniformly attached to the wafer 10.

  Subsequently, the pressing device 28 presses the wafer 10 having the adhesive film 26 disposed on the surface thereof between the stage 30 and the head 32. That is, the adhesive film 26 is pressed against the functional surface of the wafer 10 by the pressing member 36 held by the head 32. Thereby, the adhesive film 26 can be stuck on the wafer 10.

  Then, as shown in FIG. 4, the surface of the protective film of the wafer 39 with an adhesive film mentioned above is stuck on a dicing tape.

<1-2. Imaging process>
In the imaging step S2, an image of one surface of the wafer 10 in the wafer 39 with an adhesive film, that is, the functional surface 10a of the wafer 10 is captured from the other surface 39b side of the wafer 39 with an adhesive film shown in FIG.

<1-2-1. Dicing machine>
In the imaging step S2, for example, a dicing apparatus 40 shown in FIG. 5 is used. The dicing apparatus 40 includes a chuck table 42, an alignment stage 44, an imaging unit 46, a cutting unit 48, and a control unit 52.

  For example, the chuck table 42 sucks the jig 12 by a decompression device (not shown) and fixes the jig 12 on the chuck table 42.

  For example, the alignment stage 44 moves the chuck table 42 in the x direction and the y direction based on an instruction from the control unit 52.

  The imaging unit 46 includes, for example, an infrared camera, and includes an optical system that receives light reflected by the surface of the wafer 10, that is, the functional surface 10 a of the wafer 10, and an imaging device that captures an image captured by the optical system. Have. For example, the imaging unit 46 irradiates light that passes from the other surface 39b side of the wafer 39 with an adhesive film to the inside of the wafer 39 with an adhesive film, and receives reflected light from the functional surface 10a of the wafer 10. An image of the functional surface 10a of the wafer 10 is taken. The imaging unit 46 transmits information on the captured image to the control unit 52.

  The cutting unit 48 cuts the wafer 10 based on an instruction from the control unit 52. The cutting unit 48 includes, for example, a blade 50 that cuts the wafer 10. The cutting unit 48 presses the rotating blade 50 against the wafer 10 to cut the wafer 10.

  The drive unit 56 receives information regarding the position where the wafer 10 is divided from the image processing unit 54 of the control unit 52. The drive unit 56 drives the alignment stage 44 and the cutting unit 48 based on information regarding the position where the wafer 10 is divided. Thereby, the dicing apparatus 40 can divide (divide into pieces) the wafer 10.

<1-2-2. Imaging method>
In the imaging step S2, in order to recognize the position of the scribe line 14 from the functional surface image of the wafer 10, an image of the functional surface 10a of the wafer 10 in the wafer 39 with the adhesive film is captured. As a specific method, for example, the following process is performed using the dicing apparatus 40 described above.

  First, the imaging unit 46 irradiates light transmitted from the other surface 39b side of the wafer with an adhesive film to the inside of the wafer 39 with the adhesive film, and receives reflected light from the functional surface 10a of the wafer 10 to thereby receive the wafer. An image of ten functional surfaces 10a is taken. Subsequently, the imaging unit 46 transmits information on the captured image to the control unit 52. Subsequently, the image processing unit 54 of the dicing apparatus 40 receives information on the image captured by the imaging unit 46.

<1-3. Division position determination process>
In the division position determination step S3, the position at which the wafer 39 with an adhesive film is divided is determined based on the image captured in the imaging step S2. For example, in the division position determination step S3, as shown in FIG. 6, the image processing unit 54 of the dicing apparatus 40 described above recognizes the position of the scribe line 14 from the image of the functional surface 10a of the wafer 10, and A position at which the wafer 10 is divided is determined.

<1-4. Cutting groove forming process>
In the cutting groove forming step S4, for example, as shown in FIG. 7, the adhesive layer 22 is formed on the wafer 39 with the adhesive film from the other surface 39b side of the wafer 39 with the adhesive film based on the position determined in the division position determining step S3. A cutting groove 62 is formed between the surface where the protective film 24 contacts and the surface where the protective film 24 contacts the dicing tape 18. Thereby, in cutting groove formation process S4, the chip | tip 60 with an adhesive film provided with the chip | tip 64 with an adhesive layer and the protective film 24 is formed. In such a cutting groove forming step S <b> 4, it is possible to prevent the chip 21 from being displaced or dropped from the adhesive layer 22 when the plurality of chips 60 with the adhesive film are formed by the dicing device 40.

  For example, in the cutting groove forming step S4, the following processing is performed using the dicing apparatus 40 shown in FIG.

  First, when the image processing unit 54 determines to divide the wafer 10 in the x direction along the scribe line 14, the drive unit 56 drives the alignment stage 44 so that one end of the scribe line 14 is connected to the blade 50. The chuck table 42 is moved so as to be positioned below.

  Subsequently, the driving unit 56 drives the cutting unit 48 to move the cutting unit 48 downward in a state where the blade 50 is rotated, and press the blade 50 against the wafer 10.

  Subsequently, the drive unit 56 drives the alignment stage 44 to move the wafer 10 in the x direction.

  Thus, in the cutting groove forming step S4, the wafer 10 is divided in the x direction along the scribe line 14 to form a plurality of chips 60 with an adhesive film including the chip 64 with an adhesive layer and the protective film 24. Can do. Further, in the cutting groove forming step S4, the cutting waste adheres to the surface of the adhesive layer 22 by dividing the wafer 10 while the protective film 24 and the adhesive layer 22 are attached to the surface of the wafer 10. Can be prevented.

<1-5. Pickup process>
In the pickup step S5, the chip 64 with the adhesive layer is picked up (peeled) from the chip 60 with the adhesive film.

  For example, in the pick-up step S5, by pulling the chip 60 with the adhesive film in the state shown in FIG. 7 in the direction of the arrow in FIG. 8, the adhesive layer 22 of the chip 60 with the adhesive film and the protective film 24 are bonded to each other. The chip 64 with a layer is peeled off. Thereby, the chip | tip 64 with an adhesive layer can be picked up from each of the some chip | tip 60 with an adhesive film.

  As described above, in the wafer dicing method according to the present embodiment, the adhesive layer 22 and the protective film 24 are in contact with the wafer 39 with the adhesive film from the other surface 39b side of the wafer 39 with the adhesive film. A cutting groove 62 is formed between the protective film 24 and the surface where the dicing tape 18 contacts. Thereby, in the wafer dicing method according to the present embodiment, the chip 60 with the adhesive film can be manufactured in a state where the surface of the adhesive layer 22 is covered with the protective film 24. It can prevent that cutting waste adheres. Therefore, in the wafer dicing method according to the present embodiment, contamination of foreign matters when the wafer 10 is divided can be prevented.

  In the wafer dicing method according to the present embodiment, the wafer 10 and the adhesive layer 22 are cut, the protective film 24 remains in a state where it is not completely divided, and the protective film 24 and the adhesive layer 22 are left. Is smaller than the peeling force between the wafer 10 and the dicing tape 18, the peelability of the protective film 24 after processing the wafer 10 can be improved.

  Furthermore, in the wafer manufacturing method according to the present embodiment, the protective film 24 is not separated when the chip 64 with the adhesive layer is picked up, and the separation between the protective film 24 and the adhesive layer 22 is performed. Since the force is smaller than the peeling force between the wafer 10 and the dicing tape 18, it is possible to prevent the protective film 24 from being partially peeled off.

  That is, in the method for manufacturing a wafer according to the present embodiment, the protective film 24 is processed after the wafer 10 is processed by cutting the wafer 10 and the adhesive layer 22 and leaving the protective film 24 in an undivided state. The peelability can be improved.

<2. Connection method and connection structure>
As shown in FIG. 9, the connection method according to the present embodiment includes an attaching step S1, an imaging step S2, a division position determining step S3, a cutting groove forming step S4, a pickup step S5, and a crimping step S6. And have. The sticking step S1 to the pick-up step S5 are the same as the process shown in FIG.

<2-1. Crimping process>
In the crimping step S6, the chip 64 with the adhesive layer picked up in the pickup step S5 is crimped to the circuit board 70 having the electrode 72 via the adhesive layer 22, and the electrode 72 and the bump 16 of the chip 64 with the adhesive layer are connected. .

  For example, in the crimping step S6, the following processing is performed using a pressing device 28 as shown in FIG.

  First, a plurality of chips 64 with an adhesive layer are temporarily mounted on the circuit board 70. That is, the chip 64 with the adhesive layer in which it is confirmed that the protective film 24 is peeled is disposed at a predetermined position on the surface of the circuit board 70. The chip 64 with the adhesive layer and the circuit board 70 are aligned so that the bump 16 of the chip 64 with the adhesive layer and the electrode 72 of the circuit board 70 are electrically connected when both are pressed.

  Subsequently, the circuit board 70 on which the chip 64 with the adhesive layer is disposed is placed on the stage 30 of the pressing device 28.

  Subsequently, the chip 64 with an adhesive layer is pressed against the surface of the circuit board 70 by the pressing member 36 held by the head 32. For example, a method called EBS (Elasticity Bonding System) method in which a whole circuit board is pressed in a state of being covered with an elastic body and a plurality of chips temporarily arranged on the same board are collectively pressure-bonded. In the EBS method, a pressure-bonding member made of an elastomer having a concave portion provided in a portion facing the circuit board of the head main body is used. That is, in the EBS method, the plurality of chips 64 with an adhesive layer are pressed together by a thermocompression bonding head having a pressing surface made of an elastic elastomer that covers the entire printed circuit board, and the plurality of chips with an adhesive layer are collectively bonded together. Thereby, the chip | tip 64 with an adhesive layer can be collectively mounted in the surface of the circuit board 70 through the adhesive layer 22. FIG.

  As described above, in the connection method according to the present embodiment, as shown in FIG. 11, the bump 16 of the chip 64 with the adhesive layer and the electrode 72 of the circuit board 70 are connected via the adhesive layer 22. The structure 80 can be manufactured.

<3. Other embodiments>
In the wafer dicing method described above, in order to reduce the thickness of the wafer 10, as shown in FIG. 12, the other surface 39b of the wafer 39 with an adhesive film is ground to a predetermined thickness before the attaching step S1. You may further have grinding process S0 to perform. Such grinding can be performed by, for example, a back grinding apparatus.

  In the division position determination step S3 described above, the image processing unit 54 may recognize the position of the scribe line 14 by recognizing the position of the bump 16 or the alignment mark from the functional image of the wafer 10.

  In the above-described embodiment, the case where a plurality of chips 64 with an adhesive layer are collectively mounted on the circuit board 70 using an elastic body such as an elastomer for the pressing member 36 has been described. However, the method of mounting the chip 64 with the adhesive layer on the circuit board 70 is not limited to this. For example, the chip 64 with the adhesive layer may be mounted on the circuit board 70 without using an elastic body such as an elastomer. A plurality of chips 64 with an adhesive layer may be mounted on the circuit board 70 one by one.

  In the above embodiment, the case where the adhesive film 26 is attached to the wafer 10 using the pressing device 28 has been described. However, the method of sticking to the adhesive film 26 wafer 10 is not limited to this. For example, the adhesive film 26 may be attached to the wafer 10 using a roll laminator.

  Further, the pressing member 36 is not limited to the above-described EBS, and does not hinder the use of a normal thermocompression bonding head (hard head such as ceramic or metal) or an ultrasonic head.

  For example, as shown in FIG. 13, the chip 64 with the adhesive layer may be bonded to the circuit board 70. In FIG. 13, parts that are the same as or similar to those in FIGS. 1 to 12 are given the same reference numerals as in FIGS. 1 to 12, and redundant descriptions may be omitted.

  The pressing device 82 electrically connects the circuit board 70 and the chip 21 by flip chip bonding. The pressing device 82 includes a stage 84 and a ceramic tool 86. The pressing device 82 and the stage 84 may have the same configuration as the pressing device 28 and the stage 30, respectively.

  The ceramic tool 86 presses the chip 64 with the adhesive layer against the circuit board 70. The ceramic tool 86 may press the plurality of chips 64 with adhesive layers against the circuit board 70 one by one. The ceramic tool 86 may include a ceramic such as silicon carbide, silicon nitride, aluminum nitride. The ceramic tool 86 may be an example of a head. The ceramic tool 86 may include a heating device 88 that heats the ceramic tool 86. The heating device 88 may be a ceramic heater.

  Further, after the chip 64 with the adhesive layer is peeled off from the chip 60 with the adhesive film, the imaging unit 46 of the dicing apparatus 40 may capture an image of the surface of the wafer 10. Thereby, the image processing unit 54 can process the image of the surface of the wafer 10 and confirm whether or not the chip 64 with the adhesive layer is peeled from the chip 60 with the adhesive film.

  Further, for example, a pickup device that separates each chip 64 with an adhesive layer from the chip 60 with an adhesive film may check whether or not the chip 64 with an adhesive layer is peeled from the chip 60 with an adhesive film.

For example, when the pickup device that separates the individual chips 64 with the adhesive layer from the chips 60 with the adhesive film picks up the chips 64 with the adhesive layer, the chips 64 with the adhesive layer are removed from the protective film 24 of the chip 60 with the adhesive film. When not peeled off, the tip of the pickup device and the dicing tape 18 are farther away from the tip of the pickup device and the chip with the adhesive layer 18 than when the chip 64 with the adhesive layer is peeled from the protective film 24. 64 comes into contact. Then, based on the pressure change which a pickup apparatus detects, you may confirm whether the chip | tip 64 with an adhesive layer has peeled from the protective film 24 of the chip | tip 60 with an adhesive film.
<4. Example>

  Hereinafter, specific examples of the present invention will be described. Note that the scope of the present invention is not limited to any of the following examples.

<Preparation of adhesive film>
NCF was used as an example of the adhesive layer. For the protective film of each adhesive film, a polyethylene terephthalate film (hereinafter referred to as “PET film”) having a thickness different from that of the mold release treatment method was used.

  The adhesive layer was apply | coated on each protective film using the bar coater. The protective film coated with the adhesive layer was placed in an oven at 80 ° C., the solvent was evaporated, and the adhesive layer was dried. This produced the adhesive film by which NCF which is an adhesive layer, and PET film which is a protective film were laminated | stacked one by one.

  In the adhesive film, the peeling force between the adhesive layer and the protective film was adjusted by applying a release treatment to the surface of the protective film before applying the adhesive layer on the protective film. The mold release treatment was performed by applying a silicone release agent to the surface of the protective film, and then heating the protective film to dry the protective film. The adhesive films of Examples 1 to 11 shown in Table 1 and Comparative Examples 1 to 5 shown in Table 2 differing in the peeling force between the adhesive layer and the protective film by adjusting the formulation of the silicone release agent Was made.

<About the thickness of the protective film>
The thickness of the protective film shown in Table 1 and Table 2 was measured using a micrometer (manufactured by Mitutoyo Corporation).

<Peeling force of protective film against adhesive film>
The peeling force of the protective film with respect to the adhesive film shown in Table 1 and Table 2 was measured using Tensilon (made by Orientec Co., Ltd.). The tensile direction was 180 ° and the tensile method was T-type peeling. The tensile speed was set to 300 mm / min. The measurement was performed under conditions of a temperature of 23 ± 2 ° C. and a humidity of 55 ± 10% RH.

  Next, each of the adhesive films was attached to the entire surface of one side of the silicon wafer to prepare a sample used for the dicing test. A silicon wafer having a diameter of 6 inches and a thickness of 400 μm was used. In the dicing test, each process shown in FIG. 9 was performed.

  In addition, "the half cut of a protective film" shown in Table 1 and Table 2 represents the presence or absence of the cutting groove formed in cutting groove formation process S4. When the half cut of this protective film is “present”, a cutting groove having a cutting depth of 20 μm was formed in the cutting groove forming step S4.

<About workability>
The workability was evaluated by measuring the number of chips displaced or dropped from the adhesive layer when forming a plurality of chips with an adhesive film by the dicing device in the cutting groove forming step S4.

  In Tables 1 and 2, workability of “◯” indicates that there is no chip displacement or dropout in 10-point average evaluation. A workability of “Δ” indicates that less than 50% of the chips were displaced or dropped out by 10-point average evaluation. A workability of “x” indicates that 50% or more of the chips were displaced or dropped out by 10-point average evaluation.

<About peelability>
The peelability was evaluated by observing the peelability of the protective film when picking up the chip with the adhesive layer from the chip with the adhesive film in the pickup step S5.

  In Tables 1 and 2, the peelability “◎” indicates that the peelability is very good. A peelability of “◯” indicates that the peelability is good. The peelability “Δ” indicates that there is a portion where it is difficult to desorb. The peelability “x” indicates that there is a portion that is very difficult to desorb or cannot be desorbed.

<About connection reliability>
For connection reliability, the connection structure (IC) obtained in the crimping step S6 shown in FIG. 9 is measured by a four-terminal method using a distortion meter (manufactured by 4333A HEWLETTPACKARD). It was evaluated by measuring the number of normally connected channels (ch) in 400 ch.

  As an evaluation base material for evaluating connection reliability, an IC of 6.3 × 6.3 mm was used. Regarding the pressure bonding conditions in the pressure bonding step S6, the following temporary mounting step and main pressure bonding step were performed. That is, in the temporary mounting step of temporarily mounting the chip with the adhesive layer on the insulating substrate, the conditions were 0.2 MPa and 80 ° C. for 2 seconds. Further, in the final press-bonding step in which the chip with the adhesive layer is pressed by the thermocompression bonding head and the chip with the adhesive layer is finally press-bonded, the conditions are 125 N per chip and 180 ° C. for 20 seconds.

  In Tables 1 and 2, the connection reliability of “◯” indicates that 97% or more of the channels (388 channels or more) are well connected. The connection reliability “Δ” indicates that a channel (360 ch or more and 387 ch or less) of 90% or more and less than 97% is well connected. The connection reliability of “x” means that less than 90% of the channels (less than 360 ch) are well connected or that all channels cannot be crimped.

<About the evaluation result of an Example and a comparative example>
As shown in Table 1, in Examples 1 to 11, workability, protective film peelability, and connection reliability were good. Among these, in Example 2, Example 3, Example 9 and Example 10, the thickness of the protective film is in the range of 30 to 75 μm, and the peel force is 0.3 to 0.6 N / Since it was in the range of cm, the protective film peelability was particularly good.

  On the other hand, as shown in Table 2, in Comparative Example 1 and Comparative Example 2, half-cutting of the protective film is performed, but dicing is started from the surface of the wafer. It was painful and had no peeling off. Further, in Comparative Examples 1 and 2, since the dicing was started from the surface of the wafer, the connection reliability was not good.

  Moreover, as shown in Table 2, in Comparative Example 3, dicing was performed from the back surface of the wafer. However, since there was no half cut of the protective film, the protective film peelability and connection reliability were not good.

  Further, as shown in Table 2, in Comparative Example 4, dicing is performed from the back side of the wafer, but since there is no protective film, the protective film is very difficult to remove and the chip with the adhesive layer is transferred to the dicing tape. The protective film peelability was not good. In Comparative Example 4, since there was no protective film, the connection reliability was not good.

  Further, as shown in Table 2, in Comparative Example 5, dicing was performed from the surface of the wafer, and since there was no protective film, the protective film peelability was not good and the connection reliability was not very good.

  10 wafers, 12 jigs, 14 scribe lines, 16 bumps, 18 dicing tape, 20 frames, 21 chips, 22 adhesive layers, 24 protective films, 26 adhesive films, 28 pressing devices, 30 stages, 32 heads, 34 heating devices, 36 pressing member, 38 holding unit, 40 dicing apparatus, 42 chuck table, 44 alignment stage, 46 imaging unit, 48 cutting unit, 50 blade, 52 control unit, 54 image processing unit, 56 driving unit, 60 chip with adhesive film, 62 cutting groove, 64 chip with adhesive layer, 70 circuit board, 72 electrodes, 80 connection structure, 82 pressing device, 84 stage, 86 ceramic tool, 88 heating device

Claims (10)

An adhesion step of adhering the surface of the protective film of the wafer with an adhesive film formed by sequentially laminating an adhesive layer and a protective film on the one surface of the wafer having a circuit pattern on one surface;
An imaging step of capturing an image of one surface of the wafer in the wafer with the adhesive film from the other surface side of the wafer with the adhesive film;
A division position determination step for determining a position to divide the wafer with an adhesive film based on the image captured in the imaging step;
Based on the position determined in the division position determining step, the surface where the adhesive layer and the protective film are in contact with the wafer with the adhesive film from the other surface side of the wafer with the adhesive film, the protective film and the dicing A chip with an adhesive layer in which the adhesive layer is laminated on the one surface of the chip having the circuit pattern on one surface by forming a cutting groove between the surface contacting the tape and the protective film, A cutting groove forming step of forming a plurality of chips with adhesive film comprising:
A pick-up process for picking up the chip with the adhesive layer from the chip with the adhesive film.   The wafer dicing method according to claim 1, wherein a peeling force between the protective film and the adhesive layer is 0.1 to 3.0 N / cm.   The wafer dicing method according to claim 1, wherein a thickness of the protective film is 25 to 100 μm.   In the imaging step, by irradiating light transmitted from the other surface side of the wafer with an adhesive film to the inside of the wafer with adhesive film, and receiving reflected light on the one surface, The wafer dicing method according to claim 1, wherein an image is picked up.   The wafer dicing method according to claim 1, further comprising a grinding step of grinding the other surface of the wafer with an adhesive film to a predetermined thickness before the attaching step.   A chip with an adhesive layer picked up by the wafer dicing method according to any one of claims 1 to 5 is pressure-bonded to a circuit board having an electrode through the adhesive layer, and the electrode and the chip with the adhesive layer are bonded. A connection method including a crimping step of connecting the circuit pattern.   The connection method according to claim 6, wherein the adhesive layer is NCF or ACF.   The connection method according to claim 6 or 7, wherein the crimping step includes a pressing step of pressing the chip with the adhesive layer against the surface of the circuit board with an elastic body held by a head.   The connection method according to claim 8, wherein the pressing step includes a step of simultaneously pressing the plurality of chips with the adhesive layer against the surface of the circuit board with the elastic body.   A connection structure obtained by the connection method according to claim 6.

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