JP2011227814A - Semiconductor device, semiconductor device manufacturing apparatus, semiconductor device manufacturing method, and ic tag - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surface structure and an arrangement of a semiconductor mounting substrate, and a manufacturing technology using the structure and the arrangement which can alleviate a positioning accuracy in proportion to the size of a conveyance object, on the ground that the positioning accuracy needed for assembling an IC tag has been increasing in accordance with the downsizing of an IC chip.SOLUTION: A liquid droplet formed to have a larger size than a semiconductor substrate is attached on a semiconductor mounting substrate, and the semiconductor substrate is attached on the liquid droplet to manufacture a semiconductor device. The semiconductor substrate attached to the liquid droplet is directed to a hydrophilic region with the evaporation of the liquid droplet and is positioned in a self-aligned manner.

Description

  The present invention relates to an assembling technique for manufacturing an IC tag or a semiconductor device at a low cost. For example, the present invention relates to a manufacturing technology of an IC tag or a semiconductor device on which an extremely small and extremely thin IC chip is mounted.

  Recently, semiconductor devices (so-called IC tags) that can read and write data of IC chips in a non-contact manner have become widespread. Usually, for example, an induction electromagnetic field or a radio wave is used for communication with an IC chip. The IC tag is used while attached to an article. IC tags are expected to be used in various fields such as manufacturing / distribution management, various tickets, and hospital chart management. IC tags are expected to be superior to barcodes in terms of recognition performance during article movement, remote reading, multiple simultaneous readings, network links, and difficulty in copying.

  Currently, reuse of IC tags is mainly used. However, the development of IC tags for disposable applications is expected in the future. For example, it is expected that an inexpensive and extremely thin IC tag is embedded in paper and used for management of securities and other paper media and forgery prevention. In addition, it is said that development of further cost reduction technology is important for the spread of IC tags for disposable use.

  One of the cost reduction technologies is the miniaturization of the IC chip. When the IC chip is downsized, the number of IC chips that can be obtained from one semiconductor wafer increases. For this reason, it is effective for reduction of material cost. So far, ultra-small and ultra-thin IC chips of 50 μm square and 5 μm thickness have been developed (Non-Patent Document 1).

  However, with the miniaturization of the IC chip, the positioning accuracy required for the assembly process of the IC tag has become very high. For this reason, new technology development relating to IC chip handling technology has become necessary. Conventionally, a pick and place technique has been used for handling IC chips.

  This method consists of the following three steps. First, a wafer on a support sheet having tackiness is subjected to a dicing process. Next, the IC chips still arranged in the wafer shape before dicing are lifted one by one with the push-up pins. Finally, the IC chip is picked up and transported by vacuum tweezers whose position is controlled by the robot.

  However, various problems have arisen with the miniaturization of IC chips. For example, it has been pointed out that the IC chip may be damaged by the push-up pin. Further, it has been pointed out that the assembly cost increases due to the use of a robot with high positioning accuracy. Along with this, the development of a support sheet material having an expanding function that increases tackiness control and the interval between adjacent chips has also been developed (Non-Patent Document 2).

  However, when an extremely small semiconductor chip typified by the above-mentioned size of 50 μm square and thickness 5 μm is handled in a dry environment, the chips are scattered and adsorbed by electrostatic force or van der Waals force. These phenomena cause chip damage. For this reason, it is difficult to handle an object of 100 μm or less in which electrostatic force or van der Waals force is more dominant than gravity in a dry environment.

  As a method for solving the above problems, several methods have been devised for handling in a wet environment, that is, for handling an IC chip by fluid control using a solution (Non-patent Document 3, Patent Documents 1 and 2).

  Non-Patent Document 3 discloses a method of transporting an IC chip cut out in a trapezoidal shape into a recess on a substrate which is a storage area by using a flow of a solution. Note that the IC chip transported in the vicinity of the storage area is fitted into a recess on the substrate by gravity, van der Waals force, and surface interaction.

  Patent Document 1 discloses a method of adjusting the direction of a semiconductor chip using a hydrophilic force and a hydrophobic force when placing an IC chip using a self-organizing function.

  Patent Document 2 discloses a chip handling technique in which an IC chip is held in a special solution and handled like a reagent containing fine particles. This technique can be applied to an IC chip having a size of several tens of μm or more. In this technique, the IC chip dispersed in the solution is sucked together with the solution by the IC chip holding nozzle, and only one IC chip is captured at the tip of the IC chip holding nozzle. Thereafter, the captured IC chip is transported to the mounting area. In this state, pressure is applied to the tip of the IC chip holding nozzle to release the IC chip to the mounting area. Alternatively, the IC chip captured in the adhesive mounting area is transported and released using the adhesiveness of the mounting area.

JP 2008-258390 A International Publication No. 2006/077739

ISSCC Dig. Tech. Papers., 482-483 (2007). Proc. MANTECH Conference, Austin TX, 33-36 (2007). IEEE Photons. Technol. Lett., 6 706-708 (1994).

  However, in the IC tag manufacturing technology using the IC chip holding nozzle, it is necessary to accurately position the IC chip on the semiconductor mounting substrate. Therefore, in the case of the conventional method, an IC chip having a double-sided electrode structure is used to increase the tolerance for inversion and angular deviation of the IC chip. However, positioning accuracy is also required in the height direction with respect to the semiconductor mounting substrate. For example, if there is any deviation in the positioning of the IC chip holding nozzle in the height direction, the IC chip is pressed against the semiconductor mounting substrate. At this time, if the pressing force is excessive, mechanical damage may occur in the IC chip. Therefore, there is a case where a technique of blowing off the IC chip from a position away from the semiconductor mounting substrate in the height direction is sometimes employed. However, if the position to be blown off is too far from the semiconductor mounting substrate, there is a possibility that the IC chip cannot be mounted within the allowable range of the mounting position. Furthermore, when the IC chip is extremely thin, cracks and cracks may be generated in the IC chip when pressed against the surface of the semiconductor mounting substrate, thereby reducing the IC tag manufacturing yield.

  The present invention aims to provide means and methods for solving the above-mentioned problems. In particular, an object of the present invention is to provide a surface structure and arrangement of a semiconductor mounting substrate that can relax positioning accuracy as compared with the size of an object that is a transferred object, and a manufacturing technique that uses the structure and arrangement.

  In the present invention, on the semiconductor mounting substrate, the first surface area on which the semiconductor substrate is mounted, and the second surface which is disposed around the first surface area and has a critical surface tension smaller than that of the first surface area. Forming an area. For example, the first surface area is a hydrophilic surface and the second surface area is a hydrophobic surface. Note that the first surface area and the second surface area are not limited to the hydrophilic surface and the hydrophobic surface, as will be described later.

  Next, a method for mounting the semiconductor substrate on the semiconductor mounting substrate will be described. First, a relatively large droplet that spreads to a hydrophobic area formed around the mounting position of the semiconductor substrate is generated and attached to the mounting position of the semiconductor substrate. In this state, one semiconductor substrate is added to the droplet. After this, the droplets evaporate. In this evaporation process, the semiconductor substrate moves while adsorbed on the wall of the droplet, and is finally placed at the mounting position.

  Such mounting is possible for the following reasons. Once the semiconductor substrate is encapsulated on or in the droplet, it is held at the gas-liquid interface by the surface tension of the droplet. Therefore, the semiconductor substrate continues to exist on the outer periphery of the droplet in the process of changing the size of the droplet by evaporation of the droplet. For this reason, the semiconductor substrate also moves with the change in the size of the droplet and the movement of the droplet. In the evaporation process, flow occurs inside the droplet, and the semiconductor substrate is automatically transported to the hydrophilic area where evaporation occurs most slowly.

  Using this method, the semiconductor substrate can be transported to a predetermined mounting position even when the initial position when the semiconductor substrate is released into droplets is several to 100 times the positioning accuracy with respect to the predetermined mounting position. Can do. In other words, the separation of the semiconductor substrate in the process of mounting the semiconductor substrate on the semiconductor mounting substrate may be very rough as compared with the case where the semiconductor substrate is directly positioned at a predetermined mounting position. In addition, the semiconductor substrate is released by contact with the droplet. That is, the semiconductor substrate does not directly contact the solid semiconductor mounting substrate when released. For this reason, the semiconductor substrate can be disposed at a predetermined mounting position on the semiconductor mounting substrate without damaging the semiconductor substrate.

  Hereinafter, an IC tag which is an example of a semiconductor device including a semiconductor substrate and a semiconductor mounting substrate will be described. The semiconductor substrate used for the IC tag is, for example, an IC chip having an electrode only on one side (so-called single-sided electrode IC chip) or an IC chip having one electrode on both sides of the chip and allowing inversion (so-called double-sided electrode) IC chip) is used.

  On the other hand, it is desirable to prepare two external antennas as semiconductor mounting substrates in order to protect the IC chip and to support the double-sided electrode IC chip. In the case of an IC tag using two external antennas, the IC chip adopts a structure in which both surfaces are sandwiched between two external antennas. That is, the IC tag adopts a so-called sandwich structure. Of course, it is sufficient that only the periphery of the IC chip has a sandwich structure. Accordingly, the two external antennas do not have to be the same size, and one area may be smaller than the other area. Also, two external antennas are not necessarily required, and one of them may be a protection sheet for an IC chip.

  At least the external antenna on the side where the IC chip is mounted is desirably provided with a hydrophilic area where the IC chip is mounted and a hydrophobic area surrounding the hydrophilic area.

  The final configuration of the IC tag takes a sandwich form in which an IC chip is mounted in a hydrophilic area on one external antenna and another external antenna or protective sheet is disposed thereon. Of course, the electrode of the IC chip and the external antenna are electrically connected.

  Next, a case where an IC chip is mounted on an external antenna using the manufacturing method of the present invention will be described. First, droplet generation or supply means will be described. There are several possible methods for producing or supplying the droplets. For example, there is a method of adding a certain amount of liquid to a chip mounting position on an external antenna using a liquid dispenser.

  Next, IC chip capturing means will be described. The IC chip capturing means includes, for example, a storage container that stores a solution containing a plurality of IC chips, an elongate IC chip holding nozzle that captures the IC chip at the tip, and a pump (suction machine and processing unit) connected to the IC chip holding nozzle. And an actuator that inserts the tip of the IC chip holding nozzle into the solution in the container and lifts the IC chip attached to the tip. The hole opened at the tip of the IC chip holding nozzle is smaller than the diameter of the IC chip.

  First, an IC chip holding nozzle having a hole smaller than the diameter of the IC chip is inserted at the tip into a solution containing a plurality of IC chips, and a suction force is applied to the tip of the IC chip holding nozzle. When one IC chip is sucked and held at the tip, the IC chip holding nozzle is pulled out from the solution in that state. Next, the IC chip 5 sucked and held at the tip is applied with pressure and released into droplets attached on the external antenna. The release position does not need to be the center of the droplet, and may be any place where the IC chip can come into contact with the liquid.

  Next, the droplet evaporation means will be described. Evaporation is the simplest form of natural drying at room temperature. However, in order to speed up the time required for mounting the IC chip, it is desirable to install a lamp, a heater or other heaters.

  An IC tag manufacturing method to which the semiconductor device manufacturing method according to the present invention is applied includes an external antenna having a hydrophilic area and a hydrophobic area, a droplet generating / supplying unit, an IC chip capturing unit, and a droplet evaporation unit as required. It can be realized by using it. Specifically, a step of capturing only one IC chip, a step of supplying droplets to the IC chip mounting portion of the external antenna having a hydrophilic area and a hydrophobic area on the surface, and adding the captured IC chip And a step of releasing the droplet to the droplet side and a step of evaporating the released droplet of the IC chip. By applying this manufacturing method, the IC chip is disposed in a predetermined mounting position (hydrophilic area) formed on the external antenna.

  According to the present invention, a semiconductor substrate can be positioned at a predetermined position by using fluid control of a droplet using surfaces having different critical surface tensions (for example, a hydrophobic surface and a hydrophilic surface). For this reason, even when the semiconductor substrate is extremely thin, the semiconductor substrate itself does not need to be mechanically damaged. Moreover, since the manufacturing method according to the present invention is simple in process, it does not require complicated assembly equipment. Therefore, a high-quality semiconductor device can be manufactured with low manufacturing cost and high efficiency. In addition, the manufacturing method according to the present invention can be applied not only to the semiconductor substrate but also to the conveyance of sheet-like substrate material and fine particles. For this reason, this invention can be utilized not only for conveyance of a semiconductor substrate but for conveyance of various materials accompanying three-dimensional mounting.

The schematic diagram which shows the structural example of an IC tag. The schematic diagram which shows the structural example of an IC tag. The schematic diagram which shows the structural example of an IC tag. The schematic diagram which shows 1 process of the manufacturing process of an external antenna. The schematic diagram which shows 1 process of the manufacturing process of an external antenna. The schematic diagram which shows 1 process of the manufacturing process of an external antenna. The schematic diagram which shows 1 process of the manufacturing process of the external antenna with a resin film for chip | tip adhesion | attachment. The schematic diagram which shows 1 process of the manufacturing process of the external antenna with a resin film for chip | tip adhesion | attachment. The schematic diagram which shows 1 process of the manufacturing process of the external antenna with a resin film for chip | tip adhesion | attachment. The schematic diagram which shows 1 process of the manufacturing process of the external antenna with a resin film for chip | tip adhesion | attachment. The schematic diagram which shows the mounting positional relationship of IC chip and an external antenna. The schematic diagram which shows the mounting positional relationship of IC chip and an external antenna. The schematic diagram which shows the mounting positional relationship of IC chip and an external antenna. The schematic diagram which shows the mounting positional relationship of IC chip and an external antenna. The schematic diagram which shows the mounting positional relationship of IC chip and an external antenna. The schematic diagram which shows the mounting positional relationship of IC chip and an external antenna. The schematic diagram which shows the external antenna array which has arrange | positioned the some external antenna on the plane. The schematic diagram which shows the example of the double-sided electrode IC chip which has arrange | positioned the electrode one by one on both surfaces of a chip | tip. The schematic diagram which shows the cross-section of the principal part of IC chip and external antenna which mounted IC chip in the hydrophilic conductive film layer. The schematic diagram which shows the cross-section of the principal part of IC chip and external antenna which mounted IC chip in the hydrophilic conductive film layer. The schematic diagram which shows the cross-section of the principal part of IC chip and external antenna which mounted IC chip in the hydrophilic conductive film layer. The schematic diagram which shows the cross-section of the principal part of IC chip and external antenna which mounted IC chip in the hydrophilic resin film layer. The schematic diagram which shows the cross-section of the principal part of IC chip and external antenna which mounted IC chip in the hydrophilic resin film layer. The schematic diagram which shows the cross-section of the principal part of IC chip and external antenna which mounted IC chip in the hydrophilic resin film layer containing electroconductive particle. The schematic diagram which shows the cross-section of the principal part of IC chip and external antenna which mounted IC chip in the hydrophilic resin film layer containing electroconductive particle. The schematic diagram which shows the cross-section of the principal part of the IC tag which pinched | interposed the IC chip of the double-sided electrode structure with two external antennas. The schematic diagram which shows the cross-section of the principal part of the IC tag which pinched | interposed the IC chip of the double-sided electrode structure with two external antennas. The schematic diagram which shows the cross-section of the principal part of the IC tag which pinched | interposed the IC chip of the double-sided electrode structure with two external antennas. The schematic diagram which shows the cross-section of the principal part of the IC tag which pinched | interposed the IC chip of the double-sided electrode structure with two external antennas. The schematic diagram which shows the cross-section of the principal part of the IC tag which pinched | interposed the IC chip of the double-sided electrode structure with two external antennas. The schematic diagram which shows the example of the single-sided electrode IC chip which has arrange | positioned two electrodes on the single side | surface of a chip | tip. The schematic diagram which shows the example of the single-sided electrode IC chip which has arrange | positioned two electrodes on the single side | surface of a chip | tip. The schematic diagram which shows the example of the double-sided electrode IC chip which has arrange | positioned two electrodes on both surfaces of a chip | tip. The schematic diagram which shows the example of the double-sided electrode IC chip which has arrange | positioned two electrodes on both surfaces of a chip | tip. The schematic diagram which shows the structural example of the principal part of an external antenna. The schematic diagram which shows the structural example of the principal part of an external antenna. The schematic diagram which shows the structural example of the principal part of an external antenna. The schematic diagram which shows the structural example of the principal part of an external antenna. The schematic diagram which shows the cross-section of the principal part of IC chip which mounted the single-sided electrode IC chip in the hydrophilic conductive film layer, and an external antenna. The schematic diagram which shows the cross-section of the principal part of IC chip which mounted the double-sided electrode IC chip in the hydrophilic conductive film layer, and an external antenna. The schematic diagram which shows the cross-section of the principal part of the IC tag which pinched | interposed the single-sided electrode IC chip with the protection sheet. The schematic diagram which shows the cross-section of the principal part of the IC tag which sandwiched the double-sided electrode IC chip between the protective sheets. The block diagram which shows the preparation flow of IC tag. The schematic diagram explaining the apparatus structure and manufacturing process for mounting IC chip in the predetermined position of an external antenna using a droplet. The schematic diagram explaining the apparatus structure and manufacturing process for capturing a liquid using a liquid capture pin, and supplying or arrange | positioning the said droplet to the predetermined position of an external antenna. The schematic diagram explaining the apparatus structure and manufacturing process which produce | generate or arrange | position a droplet in the predetermined position of an external antenna by immersing an external antenna in the solution bath filled with the droplet solution. The schematic diagram which shows the state by which the droplet was arrange | positioned on the board | substrate of the external antenna. The schematic diagram which shows the state by which the droplet was arrange | positioned on the board | substrate of the external antenna. The schematic diagram which shows the state which added an IC chip to a droplet and an IC chip exists in the gas-liquid interface of a droplet. FIG. 3 is a schematic diagram showing a state where an IC chip is captured at a gas-liquid interface of a droplet and the IC chip is conveyed to a hydrophilic conductive film layer by drying the droplet. The schematic diagram which shows the state just before a droplet evaporates on a hydrophilic conductive film layer. The schematic diagram which shows the state by which the droplet was dried completely and the IC chip was mounted on the hydrophilic conductive film layer. Explanatory drawing which shows the principle by which an IC chip is capture | acquired by a gas-liquid interface. Explanatory drawing which shows the principle which an IC chip moves on the droplet surface. Explanatory drawing which shows the principle which an IC chip moves on the droplet surface. Explanatory drawing which shows the principle which an IC chip moves on the droplet surface. The schematic diagram which shows the state by which the IC chip was trapped in the gas-liquid interface of a droplet in the state which added the IC chip to the droplet, reversed the external antenna, and was against gravity. The schematic diagram which shows a mode that an IC chip approaches against a gravity to a hydrophilic conductive film layer by drying of a droplet. The schematic diagram which shows the state by which the droplet was dried completely and the IC chip was mounted on the hydrophilic conductive film layer. The schematic diagram which shows the state by which the droplet was arrange | positioned on the board | substrate of the external antenna. The schematic diagram explaining the structure which piled up the board | substrate three-dimensionally using the droplet conveyance method which concerns on a form example. The schematic diagram explaining the structure which piled up the board | substrate and the wiring layer three-dimensionally using the droplet conveyance method which concerns on an example. The schematic diagram explaining an IC tag production apparatus. The schematic diagram explaining an IC tag production apparatus. The schematic diagram explaining the crimping | compression-bonding method in an IC tag production apparatus. The schematic diagram explaining the apparatus and method for isolating the completed IC tag one by one.

  Embodiments of the present invention will be described below with reference to the drawings. In the following embodiments, the structure of the IC tag and the connection process between the IC chip and the antenna substrate will be mainly described. However, the application field of the present invention is not limited to this, and the contents of the embodiments to be described later can be utilized for the whole semiconductor mounting technology.

[Example 1]
In this embodiment, a structure of an external antenna constituting an IC tag and a method for manufacturing the IC tag will be described.

(Structure example of IC tag)
1A and 1B show a typical configuration example of the IC tag 54. FIG. 1A is a plan external view of the IC tag 54, and FIG. 1B is an exploded perspective view thereof. As shown in FIG. 1B, the IC tag 54 includes an IC chip 5 and two external antennas 52. The two external antennas 52 are arranged so as to sandwich the IC chip 5 from both sides. An antenna slit 53 is formed in the external antenna 52. The antenna slit 53 is a structure necessary for impedance matching between the IC chip 5 and the antenna, and functions to efficiently guide energy from the antenna. The two external antennas 52 do not necessarily have the same length. Moreover, it is not necessary for both the two external antennas 52 to have a slit structure. However, it is necessary that one of the two external antennas 52 does not interfere with the antenna slit 53 formed on the other side.

  In addition, as shown in FIG. 1C, an IC tag 54 having only one external antenna 52 in which an antenna slit 53 is formed is also possible. In the case of the IC tag of this form, the IC chip 5 mounted on the external antenna 52 may be protected by the protective sheet 55.

  The size of the IC tag 54 varies depending on the application. For example, in the case of the IC chip 5 used for special applications such as being embedded in paper or thread, the size is preferably in the range of 10 to 200 μm and the thickness is in the range of 0.2 to 200 μm. In order to embed the external antenna 52 in the paper, it is necessary to have an average thickness (approximately 100 μm) or less of the paper. Therefore, when used for this type of application, the thickness of the IC chip 5 is desirably 10 μm or less, and the total thickness of the IC tag 54 including the thickness of the external antenna 52 is desirably 100 μm or less. That is, the external antenna 52 handled for this type of application includes an extremely thin film form.

(Example of IC chip structure)
FIG. 6 shows a representative example of the first double-sided electrode IC chip 59. In this embodiment, the planar structure of the first double-sided electrode IC chip 59 is square (rectangular). The cross-sectional structure of the first double-sided electrode IC chip 59 includes a first electrode layer 7, an integrated circuit layer 6, and a second electrode layer 8 in order from one end side. By adopting the double-sided electrode structure, inversion and angular deviation of the electrode surface of the IC chip 5 with respect to the mounting area are allowed.

  12A and 12B are modified examples of the IC chip having a double-sided electrode structure. Hereinafter, the IC chip having this structure is referred to as a second double-sided electrode IC chip 42. In the case of the second double-sided electrode IC chip 42, the same electrode pattern is formed on both sides of the semiconductor integrated circuit layer 6. However, two patterns of the first single-sided electrode layer 56 and the second single-sided electrode layer 57 are formed on one side thereof. Among these, the first single-sided electrode layer 56 is formed at the center of the surface of the semiconductor integrated circuit layer 6. On the other hand, the second single-sided electrode layer 57 is formed with a predetermined gap between it and the first single-sided electrode layer 56. As shown in the figure, the second single-sided electrode layer 57 is annular and is formed so as to surround the first single-sided electrode layer 56. Inside the integrated circuit layer 6, a first electrode through path 35 and a second electrode tube path 36 are formed. The first electrode through path 35 electrically connects the first single-sided electrode layers 56 formed on both sides of the integrated circuit layer 6, and the second electrode tube path 36 is formed on both sides of the integrated circuit layer 6. The second single-sided electrode layers 57 are electrically connected to each other.

  FIG. 12A shows an example in which the first single-sided electrode layer 56 has a quadrangular shape and the second single-sided electrode layer 57 has a rectangular ring shape. FIG. 12B shows an example in which the first single-sided electrode layer 56 has a round shape and the second single-sided electrode layer 57 has a ring shape. However, the first single-sided electrode layer 56 may have any polygonal shape, and the second single-sided electrode layer 57 may have any polygonal ring shape.

  11A and 11B are examples of the single-sided electrode IC chip 41. FIG. In the case of the single-sided electrode IC chip 41, the first single-sided electrode layer 56 and the second single-sided electrode layer 57 similar to those shown in FIGS. 12A and 12B are formed only on one side of the integrated circuit layer 6. The difference from FIG. 12 is that both surfaces have a difference in critical surface tension. In the case of the single-sided electrode IC chip 41, it is necessary to make the surface of the integrated circuit layer 6 on the side where the electrode layer is formed hydrophilic, and make the surface of the integrated circuit layer 6 on the side where no electrode layer exists hydrophobic. There is.

  Considering various applications, it is preferable that the size of the IC chip shown in FIGS. 6, 11A and B, and FIGS. 12A and 12B is 10 to 200 μm and the thickness is 0.2 to 200 μm.

(Example 1 of manufacturing process)
FIGS. 2A to 2C show an example of a manufacturing process of the main part 58 of the external antenna. First, the hydrophilic conductive film layer 10 is patterned on the nonconductive substrate 1, and then the hydrophobic nonconductive film layer 9 is patterned. There are various methods for forming each layer. For example, sputter deposition by a semiconductor process using photolithography technology, plating method, application of printing technology, etc. can be considered.

  As the non-conductive substrate 1, for example, a polyethylene terephthalate (PET) film or a polyimide (PI) film is suitable.

  The hydrophilic conductive film layer 10 is generally made of a material such as Ti, Ni, Au, Cu, Sn, or Ag. The hydrophilic conductive film layer 10 includes a buffer layer (for example, Ti, Ni) for enhancing the adhesive force with the non-conductive substrate 1, and an upper surface layer (for example, Au, Cu, Sn, Ag). You may employ | adopt the laminated structure comprised by these.

  In the case of FIGS. 2A to 2C, the hydrophilic conductive film layer 10 is first patterned on the surface of the non-conductive substrate 1, but it is sufficient that the IC chip is finally mounted on the conductive film. . Therefore, it is sufficient that the surface of the region where the IC chip is mounted becomes hydrophilic at any time until the IC chip is mounted on the conductive film.

The hydrophobic non-conductive film layer 9 is preferably a fluorocarbon film, various amorphous fluorine films, a silicone film, a methane-based single crystal, an amorphous film, or the like. Here, the difference between hydrophilic and hydrophobic is defined by the difference in critical surface tension. When the critical surface tension of the hydrophilic conductive film layer 10 is γ _A , the critical surface tension of the hydrophobic non-conductive film layer 9 is γ _B, and the surface tension of the liquid in contact is γ _L , γ _B << γ _A and γ _B << γ _L.

(Example 2 of manufacturing process)
3A to 3D are views showing a method of forming the hydrophilic resin film layer 11 between the hydrophilic conductive film layer 10 and the hydrophobic nonconductive film layer 9 unlike the example of FIGS. 2A to 2C. In this case, after forming the hydrophilic conductive film layer 10 on the non-conductive substrate 1, the hydrophilic resin film layer 11 is formed, and further, the hydrophobic non-conductive film layer 9 is patterned.

  There are various methods for forming the hydrophilic resin film layer 11. In general, a coating technique using a dispenser, a coating technique using a spin coating or a dip coating method, and various printing techniques are applied. Here, the hydrophilic resin film layer 11 functions as an adhesive between the IC chip 5 and the external antenna main portion 58. As the hydrophilic resin film layer 11, for example, an epoxy-based thermosetting resin is suitable. When an external pressure is applied to the IC chip 5 positioned on the surface of the hydrophilic resin film 11, the IC chip 5 moves so as to push away the hydrophilic resin film layer 11 (thermosetting resin) and is hydrophilic at one end surface. The conductive film layer 10 is contacted. When the temperature is raised in this state, the hydrophilic resin film layer 11 (thermosetting resin) pushed away around the IC chip 5 is cured. Thereby, strong ohmic bonding is realized between the hydrophilic conductive film layer 10 and the electrode surface of the IC chip 5.

(Example 3 of manufacturing process)
Other manufacturing process examples are shown in FIGS. 13A and 13B, 14A and 14B. Each figure shows an example of the structure of the main part 58 of the external antenna required for mounting the second double-sided electrode chip 42 and the single-sided electrode chip 41 on the external antenna 52 by a transport method using droplets. .

  The arrangement of the hydrophilic conductive film layer 10 may be the arrangement shown in FIG. 13B or the arrangement shown in FIG. 14B depending on the shape of the electrode of the IC chip 5. The arrangement shown in FIGS. 13A and 14A is the arrangement in the previous step with respect to FIGS. 13B and 14B.

  As shown in FIGS. 13B and 14B, the hydrophobic non-conductive film layer 9 is disposed on the outermost surface. As shown in the cross-sectional configuration of each figure, the hydrophobic non-conductive film layer 9 is disposed so as to surround the outside of the hydrophilic pocket 61 in which the IC chip 5 is disposed. That is, the outer periphery of the hydrophilic area is surrounded by the hydrophobic area. With this pattern, the IC chip 5 can be positioned in a self-aligned manner by droplets. An embedded electrode path 60 for avoiding a short circuit on the IC chip is disposed inside the non-conductive substrate 1.

(External antenna structure example)
FIGS. 4A to 4F show the mounting position relationship between the IC chip 5 and the main part 58 of the external antenna. 4A to 4F show some examples of the outermost surface patterns of the hydrophilic conductive film layer 10 and the hydrophobic nonconductive film layer 9 shown in FIGS. 2C, 3D, 13B, and 14B. .

  FIG. 4A shows a structure in which a rectangular hydrophilic area 2 is formed on the external antenna main part 58 and a hydrophobic area 3 is formed so as to surround the outer periphery thereof. FIG. 4B shows an example in which the hydrophilic area 2 is circular. 4C-F are examples in which the flow path 4 is formed in the direction from the hydrophilic area 2 to the hydrophobic area 3 shown in FIGS. 4A and 4B. In each figure, one end of the flow path 4 is connected to the hydrophilic area, but a pattern separated from the hydrophilic area is also possible. The usage form of the flow path 4 shown in FIGS. 4C-F will be described later.

  As shown in each figure, the size of the hydrophilic area 2 is formed larger than the IC chip 5 to be mounted. The method of transporting the IC chip 5 by droplets cannot be controlled up to the direction of the IC chip 5 in the plane. For this reason, the shortest distance of the inner diameter of the hydrophilic area 2 needs to be longer than the longest distance of the outer diameter of the IC chip 5. By satisfying this condition, the IC chip 5 can be reliably stored in the hydrophilic area 2.

  4A corresponds to the pattern described in FIGS. 2C, 3D, 13B, and 14B. The IC chip 5 is arranged in the hydrophilic area 2, and the patterns shown in FIGS. 4B to 4F may be used as long as the area is larger than the area of the IC chip 5. When the second double-sided electrode IC chip 42 or the single-sided electrode IC chip 41 is used, the area of the hydrophilic area 2 is preferably 1.5 times or less the area of the IC chip 5 in terms of yield. On the other hand, in the case of the first double-sided electrode chip 59, if there is no short circuit between the external antennas 52, there is no particular upper limit. Actually, the area of the hydrophilic area 2 is preferably 5 times or less than the area of the IC chip 5. The reason is that if the electrode is wide, parasitic capacitance is generated, and communication performance may be lowered depending on how it is used.

[Example 2]
In this embodiment, a method and principle of mounting the IC chip 5 using the IC chip 5 and the external antenna 52 described in the first embodiment will be described.

(Addition to IC chip droplet)
First, as shown in FIG. 21A, the droplet 18 is added to the main part 58 of the external antenna. Of course, the external antenna main portion 58 is formed with a pattern in which the outer periphery of the hydrophilic area 2 is surrounded by the hydrophobic area 3 as shown in FIGS. When the droplet 18 is added, the droplet 18 is disposed so as to contact the surface of the hydrophilic area 2.

  Next, as shown in FIG. 21B, one IC chip 5 is added onto the droplet. The small and thin IC chip 5 is adsorbed and held at the gas-liquid interface of the droplet 18 as shown in FIG. 21B, and moves to a position in contact with the external antenna 52 by gravity. 23 and 24 show the principle of movement of the IC chip 5 on the droplet.

  As shown in FIG. 23, the condition for holding the IC chip 5 at the gas-liquid interface of the droplet 18 can be derived from the relational expression between isostasy and buoyancy and the relation between Laplace pressure and gravity. Moreover, the limit chip | tip thickness which can implement | achieve a holding | maintenance state is also deducible by the same relationship.

  If the density ρs of the chip material, the area S, the radius of the interface curved by the weight is r, and the water depth to the bottom of the chip is d, a balanced relationship is established as shown in Equation 1. Here, ρl and g are the density of liquid and gravity, respectively.

  Here, for convenience, when the structure of the chip and the gas-liquid interface is considered as a cylinder, Equation 2 is obtained.

  Here, when formula 2 is substituted into formula 1 and arranged, it is as follows.

  Further, considering the balance between the Laplace pressure (P = γ / r) and the average water pressure up to the depth r, Equation 4 is obtained.

  Here, γ is the surface tension of the liquid.

  When Formula 4 and Formula 3 are put together, Formula 5 is obtained, and a limit thickness at which the chip cannot sink into the droplet can be derived.

For example, when the IC chip 5 of the present invention has a dimension of 75 μm in size and 5 μm in thickness, the ultrathin IC chip 5 can be used even when Au (19.32 g / cm ³ ) having a high specific gravity is the main material. In the water droplet 18, a 210 μm, 100% methanol droplet is adsorbed and held at the gas-liquid interface as shown in FIG. 23 even if the IC chip 5 is released at a depth of 103 μm from the surface. Is obtained.

  FIG. 24A shows the principle that the IC chip held on the droplet moves in the direction of the substrate to which the droplet is added. A uniform Laplace pressure is generated on the inside of the droplet, and the IC chip cannot enter the droplet no matter where it moves. However, since gravity acts on the IC chip, it is difficult to continue to exist at the top of the droplet. When the IC chip deviates from the top of the droplet due to minute vibrations or the like, the IC chip moves along the gas-liquid interface of the droplet due to the influence of gravity and eventually slides down to the substrate to which the droplet is added (FIG. 24B). ). As a result, as shown in FIG. 24C, a stable state is obtained by coming into contact with the droplet and further contacting the substrate to which the droplet is added.

(Conveying IC chip)
Next, how the IC chip 5 is conveyed to the hydrophilic area 2 by the droplets 18 will be described.
22A to 22D are schematic views showing a state in which the IC chip 5 is arranged in the hydrophilic area 2. The IC chip 5 added to the droplet 18 is held at the gas-liquid interface of the droplet 18 as shown in FIG. Is arranged at the position of contact. Here, the hydrophobic area 3 is formed by coating an amorphous fluorine-based resin film with a thickness of submicron. In this case, the contact angle between the droplet 18 and the surface of the hydrophobic area 3 is 110 degrees. The hydrophilic area 2 is assumed to be Au. In this case, the contact angle between the droplet 18 and the surface of the hydrophilic area 2 is 30 degrees.

  When evaporation starts, the droplet 18 shrinks while the liquid in the droplet 18 flows into the hydrophilic area 2 in a state where the anchor is hit in the hydrophilic area 2. The hydrophobicity of the hydrophobic area 3 is constant. For this reason, the IC chip 5 is transported while being held at a constant contact angle on the gas-liquid interface of the droplet 18. When the diameter of the droplet 18 is reduced to the state shown in FIG. 22C, the droplet 18 and the IC chip 5 enter the hydrophilic area 2. Since the contact angle of the droplet 18 in the hydrophilic area 2 is 30 degrees, the IC chip 5 changes its posture so as to fall into the hydrophilic area 2 from the upright state thus far. FIG. 22D shows a state where the droplet 18 has completely evaporated. In this state, the IC chip 5 is mounted in the hydrophilic area 2.

  In FIGS. 22A to 22D, it is preferable that dust and protrusions are not formed on the hydrophobic area 3 as much as possible. This is because there is a possibility that the IC chip 5 gets caught in dust and protrusions and cannot move from there, and may be placed on the hydrophobic area 3.

  A modification of the method for avoiding this is simply shown in FIGS. 25A-C. FIG. 25A shows a state in which the surface on which the droplet 18 and the IC chip 5 are placed is turned upside down after the IC chip 5 is added to the droplet 18. In this case, the IC chip 5 is attracted and held at the apex of the droplet 18 by the influence of gravity. If the droplets 18 are dried in this state, the IC chip can be transported to the hydrophilic area 2 while not contacting the substrate. Therefore, even if there are structures such as dust and protrusions on the hydrophobic area 3, this can be avoided.

(Conditions required for droplets)
The liquid used for the droplet 18 may be water, but an alcohol aqueous solution or the like may be used in order to promote the evaporation of the droplet. However, due to surface tension, excessive addition of alcohol may reduce the contact angle of the hydrophobic area 3 and cause the IC chip 5 to fall sideways.

  The size of the droplet to be arranged is related to the specific gravity and area of the IC chip 5. For example, when the IC chip 5 is 50 μm square and 10 μm or less in thickness, and Au having a high specific gravity is used as a main material, there is no problem if the droplet 18 having a radius of water or an aqueous alcohol solution of 5 mm or less is disposed. In this case, it is safe to place a droplet 18 of about 400 μL on the first antenna substrate 1. Of course, in consideration of the drying time and the countermeasure against dust on the surface in consideration of the manufacturing process, the small droplet 18 is preferable. It is preferable to generate or supply the droplet 18 with a liquid amount of about 0.5 to several tens of μL.

In addition, it is calculated | required that the surface area of a droplet satisfy | fills two conditions shown below simultaneously.
(Condition 1) The surface area of the droplet is larger than the surface area of the IC chip on the side in contact with the droplet.
(Condition 2) When observed from the upper surface side of the substrate surface in a state where the IC chip surface is attached in parallel to the substrate, the outermost diameter of the droplet is outside the outer edge of the IC chip. To position.

  FIG. 26 is a diagram showing the positional relationship between the area where the droplet 18 is added and the IC chip 5. FIG. 26 shows a case where the center of the droplet 18 is out of the hydrophilic area 2 but the entire droplet 18 is within the hydrophobic area 3. In the case of FIG. 26, the IC chip 5 is in a position farthest from the hydrophilic area 2 in the initial position. However, as shown in the figure, if the entire droplet 18 is within the hydrophobic area 3 and a part of the droplet 18 is in contact with the hydrophilic area 2, the droplet 18 is in contact with the hydrophilic area 2 as described above. The IC chip 5 can be transported to the hydrophilic area 2 along with the evaporation.

[Example 3] (IC chip mounting structure)
FIGS. 7A to 7C, FIGS. 8A and B, and FIGS. 9A and B show some cross-sectional configuration examples of the external antenna main portion 58 on which the first double-sided electrode IC chip 59 is mounted. 7A to 7C show cross-sectional structure examples when the first double-sided electrode IC chip 59 is mounted on the hydrophilic conductive film layer 10. 8A and 8B show an example of a cross-sectional structure when the first double-sided electrode IC chip 59 is mounted on the hydrophilic resin film layer 11. 9A and 9B show cross-sectional structure examples in which the first double-sided electrode IC chip 59 is mounted on the hydrophilic resin film layer 12 containing conductive particles.

  As described in the first embodiment, the resin film layer acts to increase the adhesive force between the IC chip and the external antenna main portion 58. For example, when using a resin film layer, when external force is applied to the IC chip to push the thermosetting resin from the lower surface of the IC chip to the periphery, and then the temperature is raised with the lower surface of the IC chip in contact with the conductive film layer, The IC chip can be fixed to the conductive film layer. On the other hand, when the resin film layer (adhesive) is not used as shown in FIGS. 7A to 7C, it is necessary to perform ultrasonic bonding or the like from the outside after mounting the IC chip.

  FIG. 7A shows the simplest structure example. This is a structure that can be used when the non-conductive substrate 1 has sufficient hydrophobic force. This is applicable when the non-conductive substrate 1 is Teflon, PET, PI or the like. However, PET and PI have water absorption. For this reason, although it depends on the use conditions, there is a possibility that the liquid may permeate into the non-conductive substrate 1 earlier than the phenomenon of the droplet contraction due to the evaporation of the liquid in the droplet. In this case, it becomes difficult to transport the IC chip by the droplets described in the second embodiment. Therefore, when using a substrate having water absorption as the non-conductive substrate 1, it is necessary to heat the droplet to increase the evaporation rate of the liquid in the droplet.

  FIGS. 7B and 7C are cross-sectional structure examples when the hydrophobic non-conductive film layer 9 is disposed around the hydrophilic conductive film layer 10. For the hydrophobic non-conductive film layer 9, it is preferable to use a so-called fluorine-based or silicone-based water repellent that does not have water absorption. In this case, there is no change in the contact angle between the IC chip 5 and the hydrophobic conductive film layer 9 in the process of evaporating the droplet accompanying the conveyance of the IC chip. Therefore, the first double-sided electrode IC chip 59 can be stably transported to the position of the hydrophilic conductive film layer 10.

  The difference between FIG. 7B and FIG. 7C is the relationship of the area ratio of the hydrophilic conductive film layer 9, the hydrophobic nonconductive film layer 10, and the first double-sided electrode IC chip 59. In the configuration shown in FIG. 7C, the hydrophilic area has a considerable margin with respect to the first double-sided electrode IC chip 59. Therefore, the configuration shown in FIG. 7C can be applied only when the first double-sided electrode IC chip 59 that does not have the first electrode layer and the second electrode layer is used.

  8A and 8B are structural examples in the case where the outermost surface of the hydrophilic area 2 is covered with the hydrophilic resin film layer 11. 8A, the entire surface of the underlayer is the hydrophilic resin film layer 11, but as shown in FIG. 8B, the hydrophilic resin film layer 11 is disposed only in the hydrophilic pocket surrounded by the hydrophobic non-conductive film layer 9. You may do it. The structure of FIG. 8B is effective when the area of the hydrophilic conductive film layer 10 is small as shown in the figure. 8B, when pressure is applied to the first double-sided electrode IC chip 59 to adhere it to the hydrophilic conductive film layer 10, the first double-sided electrode IC chip 59 is flown by the flow of the hydrophilic resin film layer 11. It is easy to avoid positioning.

  9A and 9B are configuration examples when the outermost surface of the hydrophilic area 2 is covered with the hydrophilic resin film layer 12 containing conductive particles. Since the conductive particles enable point contact through the particles in bonding of the electrode of the chip and the conductive film layer, there is an advantage that reliable ohmic bonding can be easily obtained. Moreover, there exists an advantage that the pressure at the time of crimping | compression-bonding can be made low because electroconductive particle enters a resin film layer.

  On the other hand, in the case of an IC chip that uses the UHF band wirelessly, it can be driven also by capacitive coupling. That is, even if a thin insulating layer is interposed between the IC chip and the conductive film layer, it can operate without any problem. For this reason, the IC chip may be bonded to the conductive film layer with the hydrophilic resin film layer 11 not including conductive particles interposed therebetween. Therefore, when an IC chip in the UHF band is employed, the cross-sectional structure shown in FIGS. 8A and 8B and FIGS. 9A and 9B can be used (without pressure bonding).

  In the above description, a metal material, a resin material, etc. are taken up about the hydrophilic area 2 which is a mounting part of the IC chip 5. Here, the definition of hydrophilicity is that it is easy to become familiar with water or an aqueous alcohol solution when compared with the hydrophobic area 3 to the last. The conductive material layer 10 in the hydrophilic area 2 is preferably one in which Au, Cu, Al, Ti, Ni or the like is exposed to the air, and the resin film layer 11 is preferably a thermosetting resin containing an epoxy material. For the hydrophobic non-conductive film layer 9, clean Si, fluorine resin, Teflon resin, resist, WAX or the like is suitable.

  7A-C, FIGS. 8A and B, and FIGS. 9A and B, the thickness of the hydrophobic non-conductive film layer 9 is set to the same level as the thickness of the IC chip 5 for the sake of simplicity. It may be a layer or an atomic or molecular thickness. The hydrophobic non-conductive film layer 9 may be thicker than the IC chip. In this case, however, the upper surface of the IC chip is lower than the surrounding hydrophobic non-conductive film layer 9 and a gap is generated. In this case, it is desirable to fill the generated gap with the hydrophilic resin film layer 12 containing conductive particles.

(Cross-sectional structure of IC tag)
FIGS. 10A to 10E show cross-sectional structure examples in the vicinity of the main part of the external antenna at the time when two external antennas are joined in a stacked manner to produce an IC tag.

  FIG. 10A shows a hydrophilic conductive film layer 10 positioned on the outermost surface layer of the base material (nonconductive base material 1) of the first antenna substrate and the base material (nonconductive base material 1) of the second antenna substrate. ) Shows a structure example in which the hydrophilic conductive film layer 10 located in the outermost surface layer is in direct contact with each electrode surface of the first double-sided electrode IC chip 59. In FIG. 10A, the thickness of the hydrophobic non-conductive film layer 9 and the thickness of the first double-sided electrode IC chip 59 are substantially the same. The air layer 14 is disposed around the first double-sided electrode IC chip 59, and the outer periphery of the air layer 14 is covered with the hydrophobic non-conductive film layer 9.

  The cross-sectional structure of FIG. 10B is almost the same as FIG. 10A. However, in the structure shown in FIG. 10B, after mounting the first double-sided electrode IC chip 59 on the hydrophilic resin film layer 11 (FIG. 8B), the second antenna substrate is placed on the first double-sided electrode IC chip 59. It is obtained when it is covered and further crimped from both electrode sides. At the time of the pressure bonding, the hydrophilic resin film layer 11 positioned below the first double-sided electrode IC chip 59 is pushed out into the gap between the hydrophobic non-conductive film layer 9 and the first double-sided electrode IC chip 59. The extruded hydrophilic resin film layer 11 moves to a position surrounding the outer edge of the first double-sided electrode IC chip 59.

  Note that the hydrophilic conductive film layer 10 and the first double-sided electrode IC chip 59 located on the outermost surface of the first antenna substrate are brought into contact with the first electrode layer 7 by the extrusion of the hydrophilic resin film layer 11. It is electrically connected via. Further, the hydrophilic conductive film layer 11 which is the outermost surface of the second antenna substrate and the first double-sided electrode IC chip 59 are electrically connected via the second electrode layer 8. As described above, the resin of the hydrophilic resin film layer 11 is preferably a resin that dissolves or hardens due to a temperature change and serves as an adhesive. A material having a curing temperature higher than the melting temperature is preferable, and an irreversible reaction material is preferable.

  FIG. 10C is an example of a cross-sectional structure in the case where the thickness of the first double-sided electrode IC chip 59 is larger than the thickness of the hydrophobic nonconductive film layer 9 formed in the periphery thereof. In this cross-sectional structure, after mounting the first double-sided electrode IC chip 59 on the hydrophilic resin film layer 11 (FIG. 8B), the second antenna substrate is covered on the first double-sided electrode IC chip 59, and both electrodes It can be obtained by thermocompression bonding from the side.

  Also in this case, the hydrophilic resin film layer 11 is pushed out from the lower surface of the first double-sided electrode IC chip 59 by pressure bonding. As a result, the hydrophilic conductive film layer 10 located on the outermost surface of the first antenna substrate and the first double-sided electrode IC chip 59 are electrically connected via the first electrode layer 7. Further, the hydrophilic conductive film layer 11 which is the outermost surface of the second antenna substrate and the first double-sided electrode IC chip 59 are electrically connected via the second electrode layer 8.

  However, in the case of FIG. 10C, a cross-sectional structure in which the hydrophilic resin film layer 11 is sandwiched between the first antenna substrate and the second antenna substrate except for the region where the first double-sided electrode IC chip 59 is placed. It becomes. This is the difference from FIG. 10B.

  FIGS. 10D and 10E are cross-sectional structures after the second antenna substrate is placed on the first double-sided electrode IC chip 59 and crimped from both electrodes after the steps of FIGS. 9B and 9A. In the case of this example, the hydrophilic resin film layer 12 containing conductive particles is extruded by pressure bonding and covers both electrode surfaces of the first double-sided electrode IC chip 59. Therefore, the hydrophilic conductive film layer 10 located on the outermost surface of the first antenna substrate and the first double-sided electrode IC chip 59 are electrically connected to the first electrode layer 7 via conductive particles. Is done. Further, the hydrophilic conductive film layer 11 which is the outermost surface of the second antenna substrate and the first double-sided electrode IC chip 59 are electrically connected to the second electrode layer 8 via conductive particles. .

  In addition, it is preferable that the base material of the antenna substrate used as the lower layer of the hydrophilic conductive film layer 10 is an insulating material, and there is no restriction | limiting in the thickness. In the case of this embodiment, the antenna substrate can be used with a thickness of 1 micron or more, and even a flexible film substrate can be handled. The flow path 4 of the first antenna substrate 1 shown in FIGS. 4C-F can be used as a recovery path for recovering excess resin due to volume change or flow of the resin layer caused by pressure bonding.

FIG. 15A shows the result of arranging the single-sided electrode IC chip 41 (FIGS. 11A and 11B). In the case of FIG. 15A, the hydrophilic surface of the single-sided electrode IC chip (the surface on which the first single-sided electrode layer 56 and the second single-sided electrode layer 57 are formed) actively enters a hydrophilic pocket surrounded by a hydrophobic area. And the state joined with the hydrophilic conductive film layer 10 in a hydrophilic area is shown.
FIG. 15B shows the result of disposing the second double-sided electrode IC chip 42 (FIGS. 12A and 12B). The connection relationship of FIG. 15B is the same as that of the single-sided electrode IC chip 41. However, in the case of the second double-sided electrode IC chip 42, the joining surface may be reversed, so that the joining shown in the figure can be easily taken. be able to.

  16A and 16B show a cross-sectional configuration in the case where one surface is covered with a protective sheet 62 after the IC chip is attached to one antenna substrate. The white portion in the figure may be an air layer or an insulating layer may be formed.

  Through the above procedure, the IC chip 5 and the antenna substrate are connected to each other, and the assembly of the IC tag is completed. Note that the lower layer of the conductive material layer of the antenna substrate is preferably an insulating material, and the thickness is not limited. In this embodiment, the thickness of the antenna substrate can be used from 1 micron or more, and even a flexible film substrate can be handled. The hydrophilic path 4 of the first antenna substrate 1 shown in FIGS. 4C-F can be used as a recovery path for recovering excess resin due to a change in the volume of the resin layer caused by pressure bonding.

[Example 4]
In this embodiment, an IC tag creation method and apparatus in consideration of productivity will be described.
(External antenna array)
In consideration of the efficiency of manufacturing the IC tag and the reduction of the manufacturing cost of the external antenna 52, the external antennas 52 arranged in a single sheet in an array (hereinafter referred to as “external antenna array 51”). Is preferably prepared. In the case of the external antenna array 51 shown in FIG. 5, the external antennas 51 are continuously arranged in two rows on one sheet.

  Each of the external antennas 52 has a hydrophilic area 2 formed at the center thereof, and the periphery thereof is covered with the hydrophobic area 3. With this configuration, the IC chip can be transported to the hydrophilic area 2. FIG. 5 shows an example in which the entire sheet area other than the hydrophilic area 2 is covered with the hydrophobic area 3. Of course, if the periphery of the hydrophilic area 2 is surrounded by the hydrophobic area 3, it is not necessary to cover the entire area with the hydrophobic area. As the pattern of the hydrophilic area 2, all patterns shown in FIGS. 4A to 4F can be applied.

(Outline of manufacturing equipment)
By arraying, a plurality of external antennas 52 can be formed on a single substrate at a time. Therefore, there is an advantage that the process cost can be greatly reduced. Each time the IC chip 5 is mounted on each external antenna 52, each may be cut off from the array and used as a single substrate. However, only in the field of IC tags, even after a plurality of IC chips 5 are mounted on the array, a plurality of processes are executed as they are, and the final process in the IC tag manufacturing process is cut as shown in FIG. Is generally used. Further, as shown in the figure, when the external antenna array 51 is made into a roll shape using flexibility, it is easy to apply it to the automation of the production line, and the handling is convenient.

  In the case of FIG. 30, the IC tag array 71 is pulled out from the IC tag take-up reel 68 by the rotation of the transport roller 74 and transported to the downstream process. The conveyance roller 74 is disposed on the back side of the carrier sheet 79 of the IC tag array 71 (the side where the external antenna 52 is not formed). The IC tag array 71 is also transported by rotating the feed claws corresponding to the sprocket holes 78 formed on both sides of the carrier sheet 79. In the downstream process, a first cutting device 75 and a second cutting device 76 are arranged. A cutting support 77 is disposed at the lower surface position of the second cutting device 76.

  FIG. 17 is a flowchart showing a manufacturing process of the IC tag according to the embodiment. The manufacturing process consists of (1) capturing the IC chip, (2) supplying the droplet to the external antenna, (3) releasing the IC chip into the droplet, and (4) the hydrophilic area 2 of the IC chip by droplet evaporation. (5) Achieved by attaching external antennas.

  As described above, when the external antenna array 51 is used for manufacturing an IC tag, each IC tag is separated from the substrate after the manufacturing process shown in FIG. Further, quality check of each IC tag is performed before shipment, but this is omitted from this flowchart. FIGS. 29A and 29B schematically show the entire apparatus configuration for realizing the manufacturing flow shown in FIG.

  In the case of the apparatus shown in FIG. 29A, an external antenna array 51 is wound around the first external antenna reel 63 and the second external antenna reel 64. The other end side of the external antenna array 51 is wound around an IC tag take-up reel 68. When the IC tag take-up reel 68 rotates while maintaining tension, the two external antenna arrays 51 are joined by the pressing roller 69.

  On the upstream side of the pressing roller 69, a dispensing device 65, an IC chip operating device 66, and a heater 27 are arranged in the order of processes. First, the dispensing device 65 supplies the droplet 18 to a predetermined position of the first external antenna array 51 pulled out from the first external antenna reel 63. Next, the IC chip operating device 66 supplies the IC chip 5 to the surface of the droplet 18. Thereafter, the droplets 18 on the hydrophilic area are dried by heating the heater 27 disposed on the back side of the carrier sheet. By this drying, the IC chip 5 is mounted at a predetermined position in the hydrophilic area. Thereafter, the pressing roller 69 presses the first external antenna array 51 pulled out from the second external antenna reel 64 against the surface of the IC chip 5. As a result, the IC chip 5 is sandwiched between the two external antennas 51. Thereafter, the IC chip 5 is ohmic-bonded to the conductive film layer in the hydrophilic area by the crimping by the crimping device 67. The completed IC tag group is collected in a reel shape by the IC tag take-up reel 68.

  The basic process of the apparatus shown in FIG. 29B is the same as that in FIG. 29A. The difference is that a reversing roller 70 for reversing the top and bottom of the external antenna array 51 with the droplets 18 attached thereto is added. That is, FIG. 29B shows a system configuration corresponding to FIGS. 25A and 25B in which droplets are dried against gravity.

(Details of manufacturing equipment)
FIG. 18 shows a system configuration example of a part of the IC chip mounting apparatus according to the embodiment. The components shown in FIG. 18 include the hydrophilicity of the IC chip by capturing the IC chip, supplying the droplet to the external antenna, releasing the IC chip into the droplet, and evaporating the droplet in the steps shown in FIG. This shows a system configuration that automatically performs the process up to mounting in area 2.

  In the case of FIG. 18, the IC chip 5 is extremely small and extremely thin, has a size of 25 μm square or more and 150 μm square or less, and a thickness of 10 μm or less. When the size is as small as 150 μm square or less and the thickness is as thin as 10 μm or less, the influence of the adhesion force (Van der Waals force, electrostatic force) between the IC chips 5 becomes remarkable. For this reason, it is almost impossible to pick up the IC chips 5 one by one in a dry environment. In addition, a fatal situation such as electrostatic breakdown of a circuit may occur as a semiconductor device.

  Therefore, as shown in FIG. 18, an IC chip pick-up method that can disperse the IC chip 5 in a solution (IC chip storage solution 16) and reduce van der Waals force and electrostatic force between the IC chips 5. Is used. In the present embodiment, only one example shown below is taken up, but any method may be adopted as long as it is a system that can operate only one IC chip 5 and employs a technique using a fluid. .

  Here, it is preferable to add a surfactant or alcohol to the IC chip storage solution 16 in the IC chip storage bottle 15 in order to prevent adsorption between the IC chips. Further, in order to keep the IC chip 5 in a dispersed state, it is further preferable to continuously apply vibration and rotation to the IC chip storage solution 16 from the outside of the IC chip storage bottle 15 using a stirrer or the like.

  In a state where the IC chips 5 are dispersed one by one in the IC chip storage solution 16 and suspended, the IC chip capturing nozzle 17 is sucked and the IC chip 5 is picked up at the tip thereof. The IC chip capturing nozzle 17 is connected to a first pump 29 capable of negative pressure / positive pressure control via a first pipe 37. With this configuration, the IC chip capturing nozzle 17 can not only suck and hold the IC chip 5 at its tip, but also release the IC chip 5 held at the tip.

  Further, the IC chip capturing nozzle 17 can be positioned at an arbitrary xyz position by the first actuator 39. In this embodiment, the inner diameter of the tip of the IC chip capturing nozzle 17 is smaller than one side of the IC chip 5, and the material is glass, stainless steel or plastic.

  The external antenna array 51 is conveyed from the left to the right in the figure using an actuator, a sprocket mechanism, or the like while being mounted on a belt-like support base or the like. At that time, droplets 18 are sequentially dispensed by the dispensing nozzle 19 into each hydrophilic area 2 formed in the external antenna array 51. The tip position of the dispensing nozzle 19 is controlled by the second actuator 40. The other end (base side) of the dispensing nozzle 19 is connected to the second pump 30 through the second pipe 38. A solution is stocked in the second pump 30. Due to the pressure of the second pump 30, a certain amount of trace liquid is discharged from the tip of the dispensing nozzle 19. For generation of pressure, supply of compressed air, compression of air or liquid by a built-in syringe, deformation of a piezo element, or the like can be used. As a method of attaching the droplets 18 to the first external antenna array 51, either a method of flying the droplets 18 in the air or a method of stamping using the adhesiveness of the hydrophilic region may be employed.

  When the droplet 18 is attached to the first external antenna array 51, the IC chip capturing nozzle 17 is then conveyed onto the droplet 18 while holding the IC chip 5. Thereafter, when the first pump 29 is pressurized, the IC chip 5 is released into the droplet 18 from the tip.

  Thereafter, the droplet 18 is dried. The droplets 18 may be dried by natural drying at room temperature. In the case of FIG. 18, heating means such as a heater 27 and a lamp 28 are arranged in the transport path of the droplets 18 in order to improve the process speed.

(Other methods for attaching droplets)
19 and 20 show a modification of the method related to the supply and arrangement of the droplets. In FIG. 19, the tip 31 of the droplet catching pin 20 is immersed in the droplet solution 22 stored in the droplet solution storage bottle 21 to form a droplet 32 at the tip 31. For this reason, the tip 31 is processed into a conical shape that becomes thinner toward the tip. In the case of the apparatus configuration shown in FIG. 19, the droplet 32 formed on the tip 31 is brought into contact with the hydrophilic area 2 on the first external antenna array 51. Thereby, the droplet 18 which contacted the hydrophilic area 2 is produced | generated or arrange | positioned. In this case, it is necessary that the surface of the hydrophilic area 2 has a higher degree of hydrophilicity than the tip of the liquid capturing pin 20.

  FIG. 20 shows a method of forming droplets 18 in the hydrophilic area 2 of the external antenna array 51 by passing the external antenna array 51 while immersing it in the droplet solution 22 in the droplet solution bath 23. Yes. In the case of this method, a large number of droplets 18 can be generated or arranged at once, very easily around the hydrophilic area 2. However, it is important to increase the hydrophobicity of the hydrophobic area 3 formed around the hydrophilic area 2. Further, the hydrophobicity of the hydrophobic area 3 needs to be selected so that the contact angle becomes 100 degrees or more when a liquid is placed on the surface.

  In addition, when conveying the external antenna array 51 by the path | route shown in FIG. 20, it is desirable that the base material is a flexible sheet | seat. In this case, the external antenna array 51 is guided into the droplet solution bath 23 by the conveyance support roller 33 and then pulled up from the droplet solution 22.

(Crimping method)
FIG. 29C is a diagram showing a crimping process. The two external antenna arrays 51 are brought into close contact with the pressing roller 69, and then the bonding between the IC chip 5 and the external antenna 52 is completed by pressing with the pressure bonding head 73. By moving the crimping head 73 up and down by the pressing machine 72, the IC chip 5 can be pressed against the external antenna 52 as shown in FIG. Although the entire bottom surface of the pressure bonding head 73 may be flat, a pin may stand on the bottom surface so as to selectively press the mounting area of the IC chip 5. In the case of FIG. 29C, a heater is installed below the IC tag array 71 and thermocompression bonding is performed in combination with the heater 27. However, the thermocompression bonding may be realized by the thermocompression head 73 itself. In addition, when ultrasonic bonding is used without using a thermosetting resin for bonding the IC chip 5, an ultrasonic vibrator may be mounted at the tip of the pressure-bonding head 73.

(Cutting system)
FIG. 30 shows a process of installing the IC tag take-up reel 68 in the cutting system and separating the IC tag array 71 into a single IC tag 54 by the first cutting device 75 and the second cutting device 76. In the case of this example, the conveyance roller 74 conveys the IC tag array 71 to the installation location of the first cutting device 75 and the second cutting device 76. As shown in FIG. 30, if a thick plastic carrier sheet 79 in which sprocket holes 78 are processed at both ends of the carrier sheet 79 is lined on an extremely thin IC tag array 71, the IC tag array 71 is prevented from being twisted or torn. Can be carried easily.

[Example 5]
FIG. 27 shows an example of a cross-sectional structure when the substrate is three-dimensionally assembled using the method of transporting the IC chip 5 using droplets. In the case of FIG. 27, there are three laminated substrates 24, and each substrate is conveyed by droplets. FIG. 28 shows an example of a cross-sectional structure in the case where not only the IC chip 5 but also the metal plate 25 and further the metal wiring 26 are mounted thereon using the droplet transport method. Examples of the metal plate 25 include gold foil, Cu, Al, Sn, Ti, NICo, and Ag. In the case of FIG. 28, the metal plate 25 can be conveyed in a self-aligned manner by newly attaching a droplet 18 to the surface of the IC chip 5 after positioning and further attaching a metal plate 25 to the droplet 18. . Thereafter, the metal wiring 26 can also be transported by attaching a fine metal wiring to the droplet 18. In the case of this three-dimensional assembly method, it is necessary that the substrate to be newly laminated or the surface serving as the base of the metal plate 25 has hydrophilicity. If the material itself does not have hydrophilicity, hydrophilic processing may be performed before newly laminating a substrate or the like.

  As described above, the object to be transported can be freely arranged at a target position by the fluid control technique using the liquid droplet 18 using the hydrophilic area and the hydrophobic area other than the extremely small and extremely thin IC chip 5.

DESCRIPTION OF SYMBOLS 1 ... Nonelectroconductive base material, 2 ... Hydrophilic area, 3 ... Hydrophobic area, 4 ... Flow path, 5 ... IC chip, 6 ... Integrated circuit layer, 7 ... 1st electrode layer, 8 ... 2nd electrode Layer, 9 ... hydrophobic non-conductive film layer, 10 ... hydrophilic conductive film layer, 11 ... hydrophilic resin film layer, 12 ... hydrophilic resin film layer containing conductive particles, 14 ... air layer, 15 ... IC Chip storage bottle, 16 ... IC chip storage solution, 17 ... IC chip capture nozzle, 18 ... droplet, 19 ... dispensing nozzle, 20 ... liquid capture pin, 21 ... droplet solution storage bottle, 22 ... droplet solution, 23 ... Droplet solution bath, 24 ... Laminated substrate, 25 ... Metal plate, 26 ... Metal wiring, 27 ... Heater, 28 ... Lamp, 29 ... First pump, 30 ... Second pump, 31 ... Tip of liquid capture pin 32 ... Drops, 33 ... Conveyance support rollers, 35 ... First electrode through path, 36 ... Second electrode through path, 37 ... 1 piping, 38 ... 2nd piping, 39 ... 1st actuator, 40 ... 2nd actuator, 41 ... single-sided electrode IC chip, 42 ... 2nd double-sided electrode IC chip, 51 ... external antenna array, 52 ... external antenna, 53 ... antenna slit, 54 ... IC tag, 56 ... first single-sided electrode layer, 57 ... second single-sided electrode layer, 58 ... external antenna main part, 59 ... first double-sided electrode chip, 60 ... Embedded electrode path, 61 ... Hydrophilic pocket, 62 ... Protective sheet, 63 ... First external antenna reel, 64 ... Second external antenna reel, 65 ... Dispensing device, 66 ... IC chip operation device, 67 ... crimping device, 68 ... IC tag take-up reel, 69 ... pressing roller, 70 ... reversing roller, 71 ... IC tag array, 72 ... pressing machine, 73 ... crimping head, 74 ... conveying row , 75 ... first cutting device, 76 ... second cutting device, a support base for 77 ... cutting, 78 ... sprocket holes, 79 ... carrier sheet.

Claims (24)

A semiconductor substrate on which an integrated circuit element is formed;
A semiconductor mounting substrate in which a second surface area having a critical surface tension smaller than that of the first surface area is arranged around the first surface area on which the semiconductor substrate is mounted;
The area of the first surface area is larger than the area of the semiconductor substrate mounted in the area. The first surface area has one or more patterns, the critical surface tension of the pattern is smaller than the critical tension of the second surface area, and the pattern width is narrower than the thickness of the semiconductor substrate. The semiconductor device according to claim 1. The semiconductor device according to claim 1, wherein the first surface area is made of a conductive material and is electrically connected to the semiconductor substrate. The base material of said 1st surface area is comprised with an electroconductive material layer and the electroconductive thermosetting resin layer formed in the upper layer of the said electroconductive material layer. Semiconductor device. The base material of the first surface area is composed of a conductive material layer and a non-conductive thermosetting resin layer formed on an upper layer of the conductive material layer. Semiconductor device. The base material of the first surface area is composed of a conductive material layer and a non-conductive resin layer containing conductive particles formed in an upper layer of the conductive material layer. 2. The semiconductor device according to 1. A second semiconductor substrate mounting substrate disposed at a position facing the substrate surface of the semiconductor mounting substrate on which the first and second surface areas are formed and sandwiching the semiconductor substrate from both sides together with the semiconductor mounting substrate; The semiconductor device according to claim 1. The semiconductor device according to claim 1, wherein the semiconductor substrate has electrode pads on both sides. The semiconductor device according to claim 1, wherein the semiconductor substrate has electrode pads only on one side. Means for capturing a semiconductor substrate;
The first surface area is located at a predetermined position of the semiconductor mounting substrate in which the second surface area having a critical surface tension smaller than that of the first surface area is arranged around the first surface area on which the semiconductor substrate is mounted. Means for depositing droplets having a larger diameter;
Means for adhering the semiconductor substrate to droplets disposed on the semiconductor mounting substrate. The semiconductor device manufacturing apparatus according to claim 10, further comprising: means for evaporating the droplet adsorbed on the semiconductor substrate. The means for capturing the semiconductor substrate includes a nozzle having a smaller diameter than the semiconductor substrate, and suction means connected to the nozzle, and the tip of the nozzle injected into the solution containing the semiconductor substrate The semiconductor device manufacturing apparatus according to claim 10, wherein the semiconductor substrate is captured. The means for attaching droplets to the semiconductor mounting substrate includes a solution tank and a dispensing nozzle for discharging a liquid stored in the solution tank, and discharges a predetermined amount of liquid to a predetermined position on the semiconductor mounting substrate. The semiconductor device manufacturing apparatus according to claim 10. The means for attaching droplets to the semiconductor mounting substrate is composed of a solution tank and a dispensing pin that holds the liquid stored in the solution tank at a tapered tip, and is captured by the tip of the dispensing pin. The semiconductor device manufacturing apparatus according to claim 10, wherein a droplet is attached to a predetermined position on the semiconductor mounting substrate. The means for attaching droplets to the semiconductor mounting substrate includes a solution tank and a discharge nozzle for ejecting liquid droplets stored in the solution tank, and one or a plurality of droplets are placed on the semiconductor mounting substrate. The semiconductor device manufacturing apparatus according to claim 10, wherein the droplet is deposited at a predetermined position. The said means to make a droplet adhere to the said semiconductor mounting substrate is comprised with the mechanism which immerses at least one part of the said semiconductor mounting substrate in the said storage tank and the said storage tank. Semiconductor device manufacturing equipment. The semiconductor device manufacturing apparatus according to claim 10, further comprising means for transposing a substrate surface of the semiconductor mounting substrate after the semiconductor substrate is attached to the droplet. The means for adhering droplets to the semiconductor mounting substrate and the means for adhering the semiconductor substrate to droplets target a substrate having a plurality of regions to be the semiconductor mounting substrate after cutting. 11. The semiconductor device manufacturing apparatus according to claim 10, wherein: Capturing the semiconductor substrate;
The first surface area is located at a predetermined position of the semiconductor mounting substrate in which the second surface area having a critical surface tension smaller than that of the first surface area is arranged around the first surface area on which the semiconductor substrate is mounted. Depositing droplets having a larger diameter;
And a step of adhering the semiconductor substrate to droplets disposed on the semiconductor mounting substrate. Attaching a droplet generated in a size larger than the semiconductor substrate onto the semiconductor mounting substrate;
And a step of attaching the semiconductor substrate onto the droplet. The semiconductor device according to claim 20, wherein the step of drying the droplet to which the semiconductor substrate is attached. The semiconductor device according to claim 20, wherein the semiconductor mounting substrate has a minute hydrophilic area that becomes a mounting region of the semiconductor substrate, and a hydrophobic area that surrounds the periphery of the hydrophilic area. After the semiconductor substrate is mounted in a predetermined region, a step of attaching droplets generated in a size larger than a metal plate on the semiconductor mounting substrate including the semiconductor substrate;
The semiconductor device according to claim 20, wherein the metal plate is attached onto the droplet. A semiconductor substrate on which an integrated circuit element is formed;
An IC tag, comprising: a semiconductor mounting substrate in which the second surface area having a critical surface tension smaller than that of the first surface area is arranged around the first surface area on which the semiconductor substrate is mounted.

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