JP2011219808A - Mask dry cleaning apparatus and mask dry cleaning method, and apparatus for manufacturing mask dry - Google Patents

Abstract

The present invention provides a mask dry cleaning apparatus or a cleaning method capable of improving throughput and increasing the number of processing sheets in a dry cleaning method, or providing the mask dry cleaning apparatus adjacent to a vapor deposition apparatus. It is to provide a manufacturing apparatus with a high operating rate that can be cleaned in a short time.
The present invention changes the laser light from a circular shape to an elliptical shape when the deposited vapor deposition material attached to the mask is irradiated with laser light emitted from a laser light source to clean the mask, and the elliptical shape is changed. The laser beam is irradiated to the deposited vapor deposition material of the mask and washed.
[Selection] Figure 4

Description

  The present invention relates generally to film formation using an evaporation mask, and more particularly to a mask dry cleaning apparatus, a cleaning method, and a manufacturing apparatus for cleaning an evaporation mask with a laser.

  An organic EL device has attracted attention as a display device, and a vacuum deposition method is available as a manufacturing method. The vacuum deposition method is a method for forming an element pattern using a mask. The element pattern is formed by heating and evaporating (sublimating) the vapor deposition material in a vacuum chamber, and depositing the vapor deposition material on the display substrate through an opening of a mask provided at a position where vapor deposition is desired as shown in FIG. Since a vapor deposition material is deposited in a place other than the opening of the mask, and the opening is eventually closed, the mask is cleaned after a certain number of films are formed.

Currently, the wet cleaning method is used as the mask cleaning method, but the environmental load increases due to the use of organic materials, the pattern made of a fine structure is damaged, and it is difficult to recover and reuse the deposited material. For this reason, a dry cleaning method using a laser light source (hereinafter simply referred to as a laser cleaning method) has been developed. In Patent Document 1, dry cleaning is performed in a film forming chamber (vacuum chamber) where vapor deposition is performed, an adhesive film through which laser light is transmitted is attached to a mask, a deposit of vapor deposition material is peeled off from the mask, and peeling is performed. It is disclosed that a deposit of the deposited material is collected into a film.
In the following, the deposit of the vapor deposition material that deposits on the mask or closes the opening is referred to as an adhesion vapor deposition material F.

Japanese Patent No. 4236632

  In an organic EL device manufacturing process, a mask is an important key point that constitutes a pixel. The quality of the organic EL device includes the deformation of the mask, the dimensional change of the mask opening due to the deposition material F, the patterning defect due to the foreign matter adhering to the mask, and the display defect due to the foreign matter existing on the mask reattaching to the substrate. Dimension maintenance and cleanliness are very important.

  On the other hand, there is a high demand for tact-up in the film formation process of the organic EL device manufacturing process. Therefore, in the laser cleaning method, there is no damage to the fine pattern, and how to improve the throughput and increase the number of processed sheets while maintaining the degree of cleaning is an important issue.

  Therefore, studies have been made to expand the laser beam diameter for the purpose of tact improvement. To widen the laser beam diameter, methods such as increasing the laser beam power and taking wide defocusing are conceivable. However, the laser power distribution is uneven, the energy power is concentrated in the center of the laser, and the mask There was a risk of damage. At the same time, even when wide defocusing was taken, the power distribution was uneven, and the peeled area could not be obtained, resulting in a final drop in the peel rate.

In addition, in order to clean the entire mask, it is necessary to scan the laser beam over the entire surface. For this purpose, a sequence of line scanning in one direction, stopping, moving for the next line scanning, stopping again, and performing the next line scanning is generally followed. Movement between line scans is accompanied by a sequence of stop, move and stop. For this reason, time is required compared to line scanning, which is a major factor of tact-down, and how to shorten the movement time between line scanning, such as reducing the number of scans between lines, is a problem.
Patent Document 1 discloses a laser cleaning method in which a fine pattern is cleaned without damage. However, there is no recognition of the above-mentioned problem and, of course, no disclosure thereof.

Accordingly, a first object of the present invention is to provide a mask dry cleaning apparatus or a cleaning method capable of improving the throughput and increasing the number of processed sheets in the dry cleaning method.
A second object of the present invention is to provide a manufacturing apparatus having a high operating rate by providing the mask dry cleaning apparatus adjacent to the vapor deposition apparatus and cleaning it in a short time.

  In order to achieve the first object, the present invention changes the laser light into an elliptical shape when the deposited vapor deposition material attached to the mask is irradiated with the laser light emitted from the laser light source and the mask is cleaned. The first feature is that the elliptical laser beam is irradiated onto the deposited vapor deposition material of the mask for cleaning.

In order to achieve the first object, the present invention provides the second feature that, in addition to the first feature, the laser beam irradiation cleaning is performed by line scanning the elliptical laser beam. And
Further, in order to achieve the first object, the present invention adds the first or second feature, and the ellipse modification is performed such that the major axis direction of the ellipse shape is the scanning direction between the lines. This is a third feature.

In addition to the second or third feature, the present invention has a fourth feature that, in addition to the second or third feature, the scanning is performed by a galvanometer mirror.
Furthermore, in order to achieve the first object, the present invention has a fifth feature that, in addition to the fourth feature, the ellipse change is performed on the output side of the galvanometer mirror.

In order to achieve the first object, the present invention is characterized in that, in addition to the fourth feature, the ellipse change is performed between the galvanometer mirror and the laser light source.
Further, according to the present invention, in order to achieve the first object, in addition to the first, second, or third feature, the ellipse modification includes a saddle-shaped planoconvex cylindrical lens and the laser of the planoconvex cylindrical lens. A seventh feature is that at least the plano-convex cylindrical lens is moved or rotated so that the optical axis coupling with the light source is decentered from the optical axis of the laser light source.

  In order to achieve the second object, the present invention has any one of the first to seventh features, and a vacuum deposition chamber for depositing a deposition material on an object to be processed through a mask and forming a film. A mask dry cleaning apparatus, a vacuum isolating means provided at a connection portion between the vacuum deposition chamber and the mask dry cleaning apparatus, and the mask between the vacuum deposition chamber and the mask dry cleaning apparatus via the vacuum isolating means. The ninth feature is that it has a conveying means for conveying.

According to the present invention, in the dry cleaning method, it is possible to provide a mask dry cleaning apparatus or a cleaning method capable of improving throughput and increasing the number of processed sheets.
Moreover, according to this invention, the said mask dry cleaning apparatus can be provided adjacent to a vapor deposition apparatus, and a manufacturing apparatus with a high operation rate can be provided by wash | cleaning in a short time.

It is a figure which shows the organic EL device manufacturing apparatus which is the 1st Embodiment of this invention. It is the schematic diagram and operation | movement explanatory drawing of a structure of the conveyance chamber and processing chamber which are embodiment of this invention. It is a figure which shows an example of a mask. It is a figure which shows typically the structure of the mask dry cleaning apparatus which is the 1st Embodiment of this invention. It is a figure which shows the Example of the ellipse conversion condensing means used for the mask dry cleaning apparatus which is the 1st Embodiment of this invention. It is a figure which shows a mode that the laser beam irradiated to the mask in 1st Embodiment is made into the ellipse shape which makes an ellipse into the Y direction (vertical direction shown in FIG. 4), and it scans in that state. FIG. 6A is a diagram mainly showing the laser beam scanning method for the entire mask, and FIG. 6B is a partially enlarged view of FIG. 6A. It is a figure which shows the washing | cleaning flow in this embodiment. It is the figure which showed typically the structure of the mask dry cleaning apparatus which is the 2nd Embodiment of this invention. It is a figure which shows the Example of the ellipse conversion means used for the mask dry cleaning apparatus which is the 2nd Embodiment of this invention.

  As an embodiment of the present invention, an organic EL device manufacturing apparatus using an organic material as an evaporation material will be described as an example with reference to the drawings. FIG. 1 shows an organic EL device manufacturing apparatus 100 according to an embodiment of the present invention. Organic EL device manufacturing equipment is not simply a structure in which a light emitting material layer (EL layer) is formed and sandwiched between electrodes, but a hole injection layer or transport layer on the anode, and an electron injection layer or transport layer on the cathode. A multilayer structure in which various materials are formed as a thin film is formed, and a substrate is cleaned. FIG. 1 shows an example of the manufacturing apparatus.

  The organic EL device manufacturing apparatus 100 according to the present embodiment is roughly divided into a load cluster 13 that carries a substrate 6 to be processed, four clusters (A to D) that process the substrate 6, between each cluster, or between the cluster and the load cluster 13, or It is comprised from the control apparatus 20 which monitors and controls the five delivery chambers 14 installed between the following processes (sealing process), and these whole movements. In this embodiment, the substrate is transported with the deposition surface of the substrate as the upper surface, and the substrate is erected and deposited when vapor deposition is performed.

  The load cluster 13 includes a load lock chamber 13R having a gate valve 10 and a substrate transfer robot 15R that receives the substrate from the load lock chamber 13R and rotates to carry the substrate 6 into the delivery chamber 14a. Each of the load lock chambers 13R and each of the delivery chambers 14 has a gate valve 10 in the front and rear, and delivers the substrate to the load cluster 13 or the next cluster or the like while controlling the opening and closing of the gate valve 10 and maintaining a vacuum.

  Each cluster (A to D) includes a transfer chamber 2 having a single transfer robot 15 and two processing chambers 1 (first) arranged on the top and bottom of the drawing for receiving a substrate from the transfer robot 15 and performing a predetermined process. 1 subscripts a to d indicate clusters, and second subscripts u and d indicate upper and lower sides). A gate valve 10 is provided between the transfer chamber 2 and the processing chamber 1.

  Although the configuration of the processing chamber 1 varies depending on the processing content, a vacuum deposition chamber 1bu in which a light emitting material as a deposition material is deposited in vacuum to form an EL layer will be described as an example. FIG. 2 is a schematic diagram and an operation explanatory diagram of the configuration of the transfer chamber 2b and the vacuum deposition chamber 1bu at that time. The transfer robot 15 in FIG. 2 has a link-structure arm 157 that can move up and down as a whole (see arrow 159) and can turn left and right, and has a comb-like hand 158 for substrate transfer at the tip. .

  In this embodiment, as shown in FIG. 2, two processing lines are provided in one vacuum deposition chamber, and while the deposition is performed on one line (for example, the R line), the substrate is unloaded on the other L line. Then, the substrate 6 and the mask 8 are aligned to complete the preparation for vapor deposition. By alternately performing this process, it is possible to reduce the time during which the vaporization (sublimation) is wasted without being deposited on the substrate.

  In order to realize the above, the vacuum deposition chamber 1bu includes a delivery unit 9 for delivering the transfer robot 15b and the substrate 6, and a substrate 6 upright by turning the comb-like hand 91 of the delivery unit by the hand turning drive means 93. It has the mask 8 to align, and the vapor deposition part 7 which vapor-deposits vapor deposition material on a board | substrate through a mask. The vapor deposition section 7 includes a vertical drive means 76 that moves the vapor deposition source 71 in the vertical direction along the rail 76 and a left and right drive base 74 that moves the evaporation source 71 along the rail 75 between the left and right masks. The evaporation source 71 has a light emitting material that is a vapor deposition material inside, and a stable evaporation rate can be obtained by heating control (not shown) of the vapor deposition material. As shown in the drawing of FIG. 71 has a structure of spraying from a plurality of holes 73 aligned with 71.

  As shown in the drawing of FIG. 1, the mask dry cleaning apparatus 60 is provided in a mask cleaning chamber 4 provided adjacent to the vacuum deposition chamber 1 such as the vacuum deposition chamber 1bu. The mask cleaning chamber 4 is divided into a mask cleaning chamber 5 which is a vacuum chamber and a laser chamber 3 in the atmosphere. The mask dry cleaning device 60 is basically installed in the laser chamber. The mask cleaning chamber 5 and the vacuum deposition chamber 1 are connected via a gate valve 10B which is a vacuum isolation means, and the mask 8 can be moved between them by a mask transfer means via the gate valve 10B.

  FIG. 3 shows an example of the mask 8 in the present embodiment. The mask 8 is roughly divided into a mask portion 8M and a frame 8F that supports the mask portion. The mask portion 8M used for vapor deposition is made of Invar material, and the thickness is generally about 50 μm. The mask portion is tensioned on a sturdy frame 8F and maintains a flat surface and an opening shape. As shown in the drawing, the mask portion 8M has an opening 8h at a location corresponding to a portion to be deposited on the substrate 6. In this example, an opening corresponding to red is shown in the mask part for depositing red (R), green (G), and blue (B) light emitting materials.

  The thin mask portion is deformed by an external force or temperature, and as a result, the pitch and clearance between the openings are distorted and cannot be reproduced (the current limit is more than ten times). In addition, the dimension of the mask becomes about 1800 mm × 1500 mm with the increase in size of the substrate, and its weight also exceeds 300 kg. In the following description, in order to avoid confusion, the mask portion 8M is represented as a mask 8 unless otherwise distinguished.

  As explained in the topic, even if the laser beam is simply powered up and the laser beam diameter is expanded, the laser beam power distribution may be uneven, the energy density at the center of the laser will increase, and the mask may be damaged. There is. In addition, since the energy density in the vicinity thereof does not become so high, it is not possible to earn a large peel area, and consequently the throughput cannot be increased.

  Therefore, as a result of various experiments, it was found that by concentrating the circular laser beam into an elliptical shape, the concentration of energy power is alleviated and the energy density tends to be uniform. As a result, it was possible to reduce the damage to the mask by making the laser beam elliptical, and to expand the cleaning range in which the deposited vapor deposition material can be peeled and cleaned.

  FIG. 4 is a diagram schematically showing the configuration of a mask dry cleaning apparatus 60 according to the first embodiment of the present invention for solving the above-described problems. FIG. 4 shows a state in which the gate valve 10B, which is a vacuum isolation means, is opened and closed from the vacuum deposition chamber 1 and the mask 8 is set on the mask cleaning stage 45 by a transport means (not shown).

The mask dry cleaning apparatus 60 includes a laser beam scanning unit 30 provided in the laser chamber 3 in the atmosphere and a control unit 50 that controls the laser beam scanning unit 30. The mask dry cleaning apparatus cleans the mask 8 provided in the mask cleaning chamber 5 in a vacuum through a transmission window 35 that separates both chambers.
The laser beam scanning means 30 emits a laser beam 33, and a galvanometer mirror 32 that scans the laser beam 33 toward the surface of the mask 8 in the horizontal (X) direction, the vertical (Y) direction, and the depth (Z) direction. A reflection mirror 36 for guiding the laser beam to the galvanometer mirror, an elliptical conversion condensing means 34 for converting the circular laser beam from the galvanometer mirror into an elliptical laser beam and condensing it on the mask, and a transmission window 35. As a light source of the laser light source 31, a YAG laser, an Ar laser, a CO ₂ laser, or the like is used.

  In the embodiment described above, the ellipse conversion condensing means 34 is installed between the mask 8 and the galvanometer mirror 32, and the ellipse shape is controlled so as to be the optimum peeling condition as much as possible.

  FIG. 5 is a diagram showing an embodiment of the ellipse conversion condensing means 34. The ellipse conversion condensing means 34 includes a bowl-shaped plano-convex cylindrical lens 34d and a lens rotating means 37 that rotates the plano-convex cylindrical lens about an axis in the Y direction. The lens rotating means has a connecting rod 37b connected to the plano-convex cylindrical lens 34d and a motor 37m for rotating the connecting rod. With this configuration, the conversion of the laser beam from the circular shape 33e to the elliptical shape 33d is performed by decentering the optical axis coupling of the planoconvex cylindrical lens 34d with the laser light source 31 from the optical axis of the laser light source 31 by the lens rotating means. . The amount of eccentricity is controlled by the rotation angle, and an ellipse ratio that is a ratio of the long side / short side of the desired ellipse can be set. In this embodiment, the plano-convex cylindrical lens 34d is rotated, but it may be moved left and right.

The planoconvex cylindrical lens 34d also serves to form a defocused image on the mask to be processed. The defocus amount is obtained by the movement of the galvanometer mirror 32 in the Z-axis direction.
Here, a circular shape and an elliptical shape in this embodiment are defined. In defining an elliptical shape, a circle whose shape has a difference in length of a side in a 90 degree direction with respect to one side of a perfect circle (circle) within 10% is a circular shape, and the length of a side in a 90 degree direction with respect to a certain side. Those having a difference of 10% or more are defined as elliptical shapes.

When calculating and comparing certain optimum peeling conditions (defocus, current, frequency) from the laser power per unit area, it is in the process of changing from a perfect circle (the length of the side of the perfect circle to a) to an ellipse. If the length of one side (referred to as “a”) remains the same and the length of the other side (the ellipse-shaped major axis) is changed to twice the length (referred to as “2a”), the laser power per unit area will decrease. As in the case of the circular shape, sufficient power can be obtained to cause the peeling phenomenon. On the other hand, if the elliptical shape is 2.5 times the same, the laser power per unit area is lower than the power that causes the peeling phenomenon. Therefore, the length of one side is 2 to 2.3 times the length of the laser diameter of a perfect circle (circle) is the peelable limit value that can be peeled off. It is done.
However, since the optimum laser shape and limit value change due to fluctuations in the laser output power, even larger elliptical shapes and elliptical ratio fluctuations are possible in some cases.

  According to the embodiment described above, by making the shape of the laser beam for cleaning the mask elliptical, it is possible to expand the range in which the separation cleaning can be performed while maintaining the cleaning degree without damaging the fine pattern. As a result, it is possible to provide a mask dry cleaning apparatus that can improve throughput and increase the number of processed sheets.

  In this embodiment, when the mask is carried in and out between the vacuum deposition chamber 1 and the mask cleaning chamber 5, the mask cleaning chamber is also a vacuum chamber in order to suppress a decrease in the vacuum degree of the vacuum deposition chamber. Accordingly, it is not necessary to clean the mask in a short time and to obtain a vacuum again, and the cleaned mask can be immediately carried into the vacuum deposition chamber, so that an organic EL device manufacturing apparatus with a high operating rate can be provided.

  FIG. 6 is a diagram illustrating a state in which the laser beam irradiated to the mask in the first embodiment is scanned with the elliptical laser beam 33d having the above-described peeling limit in the Y direction (the vertical direction illustrated in FIG. 4). . FIG. 6A is a diagram mainly showing a laser beam scanning method for the entire mask 8, and the irradiation position of the elliptical laser beam 33d is scanned from the origin position at the upper left end (or upper left end) of the mask portion 8M. This is an example. FIG. 6B is a partially enlarged view of FIG. As shown in FIG. 6B, when the diameter Dr of the circular laser beam 33e is a, the major axis of the elliptical laser beam 33d at the separation limit is 2a to 2.3a. The scanning is performed so as to overlap a part of the elliptical peeling region H in order to clean the entire surface of the mask.

  As described in the problem, the movement between the line scans in the Y direction requires a sequence of stop, movement, and stop. If irradiation is performed at a frequency of 40 KHz, time is required compared to line scanning in the X direction in which a pulse is irradiated every 1/40000 seconds, which is a major factor in tact down. In particular, if the movement in the Y direction is performed by the position feedback control in order to prevent the positional deviation in the Y direction, the movement time T between scans becomes long, and the influence of the tact down is large. Therefore, how to reduce the number of scans in the Y direction is a key point. Therefore, in this embodiment, the elliptical ellipse is set in the Y direction to reduce the number of movements in the Y direction, thereby reducing the overall scanning time and improving the throughput.

  A circular laser beam is obtained by performing peeling cleaning with a maximum peeling width Hc in which the major axis length Dc of the elliptical laser beam is 2 to 2.3 times the circular laser beam diameter Dr emitted from the laser light source. Compared to scanning with the diameter Dr, the number of scans in the Y direction can be reduced to 1 / 2.3-1 / 2.

  The embodiment described above provides a mask dry cleaning apparatus that can reduce the number of movements between line scans by lengthening the cleaning laser beam 33d in the direction between line scans, and as a result, can reduce the cleaning time of the entire mask. it can.

Next, the cleaning flow in this embodiment will be described with reference to FIG. Before performing the cleaning shown in FIG. 7, the decentering amount and defocus amount of the plano-convex cylindrical lens 34d are set based on the optimum peeling conditions built in the controller 5 in advance.
After that, first, the mask 8 to be cleaned passes through the gate valve 10B opened from the vacuum deposition chamber 1, is carried into the mask cleaning chamber 5 and set on the mask cleaning table 45 (Step (1)). Next, the galvanometer mirror 32 is driven in the horizontal (X) direction and the vertical (Y) direction shown in FIG. 4, and the irradiation position of the laser light 33e of the laser light source 31 is set to the right end upper end or the left end upper end (whichever is appropriate). ) To the origin position (Step (2)). After that, the laser light 33e is scanned once in the horizontal direction by the galvanometer mirror 32 shown in FIG. 4, and cleaning is started (Step (3)). Next, a predetermined amount is shifted downward in the Y direction of the laser beam by the galvanometer mirror (Step (4)). Steps (3) and (4) are repeatedly washed by the height of the mask 8 in the Y direction (Step (5)).

  According to the embodiment of the processing flow described above, the range that can be peeled and cleaned can be expanded by scanning the elliptical laser beam without damaging the fine pattern. As a result, it is possible to provide a mask dry cleaning method that can improve throughput and increase the number of processed sheets.

FIG. 8 is a diagram schematically showing the configuration of a mask dry cleaning apparatus 60 according to the second embodiment of the present invention. A first point different from the first embodiment shown in FIG. 4 is that the condenser lens 34d shown in FIG. 5A is separated from the elliptical conversion condensing means 34, and the elliptical conversion condensing means 34 is changed to an ellipse changing means 38. This is the point.
The second difference is that the ellipse changing means 38 is provided after the galvanometer mirror 32 in the first embodiment. However, in this embodiment, the ellipse changing means 38 is provided before the galvanometer mirror, that is, between the laser light source 31 and the galvanometer mirror 32. It is a point provided.

  Further, a third different point is that a load lock chamber 40 capable of realizing a vacuum / atmosphere atmosphere is provided in place of the gate valve 10B, and mask transfer between the vacuum deposition chamber 1 and the mask cleaning chamber 4 is performed via the load lock chamber. Do. As a result, as shown in FIG. 4, it is not necessary to divide the mask cleaning chamber chamber 5 in a vacuum atmosphere into a laser chamber in the atmospheric atmosphere, and the mask cleaning chamber 4 can be made into one atmospheric chamber.

FIG. 9 is a diagram showing two examples of the ellipse conversion means 38 used in the second embodiment. The elliptical conversion means 38A shown in FIG. 9A includes two saddle-shaped plano-convex cylindrical lenses 34a and 34b each having a confocal point 34c for circular laser light 33e emitted from the laser light source 31 only in one direction. It has an elliptical laser beam 33d that changes in diameter only in a certain direction. The ellipse ratio, which is the ratio of the long side / short side of the ellipse, can be changed by the focal length ratio of the two plano-convex cylindrical lenses.
The elliptical conversion means 38B of FIG. 9B has a prism 39 that obliquely enters circular laser light 33e emitted from the laser light source 31 and changes the elliptical shape according to the degree of refraction of the laser light.

  In the second embodiment, the condensing lens 34d is left on the output side of the galvanometer mirror. However, the condensing lens 34d may be moved together with the ellipse conversion units 38A and 38B to form ellipse conversion condensing units 34A and 34B. . Further, the elliptical conversion condensing means 34 used in the first embodiment can be used in the second embodiment. Further, the defocus position on the mask may be adjusted by a convex lens at the final stage of the laser light source without providing the condenser lens.

  Also in the second embodiment, as in the first embodiment, the shape of the laser beam for cleaning the mask is an ellipse, so that the degree of cleaning is maintained without damaging the fine pattern, and the peeling is performed. The range that can be cleaned can be expanded. As a result, it is possible to provide a mask dry cleaning apparatus that can improve throughput and increase the number of processed sheets.

  Also in the second embodiment, a manufacturing apparatus with a high operating rate can be provided by providing a mask cleaning chamber having a mask dry cleaning apparatus adjacent to the vacuum deposition chamber and cleaning the mask in a short time.

Moreover, the effect acquired by 1st Embodiment can be show | played by applying the various measures demonstrated by 1st Embodiment to 2nd Embodiment.
In the first and second embodiments, one laser light source is used. However, in order to improve throughput, a plurality of laser light sources may be provided to share a region to be cleaned.

1: Processing chamber 1bu: Vacuum deposition chamber 2: Transfer chamber 3: Laser chamber 4: Mask cleaning chamber 5: Mask cleaning chamber 6: Substrate 7: Deposition unit 8: Mask 8M: Mask unit 8F: Mask frame 8h: Mask opening 10, 10B: Gate valve 14: Delivery chamber 15: Transfer robot 20: Control device 30: Laser beam scanning means 31: Laser light source 32: Galvano mirror 33: Laser beam 33d: Ellipse-shaped laser beam
33e: Laser light emitted from the laser light source 34, 34A, 34B: Ellipse conversion condensing means 34a, 34b, 34d: Plano-convex cylindrical lens 35: Transmission window 36: Reflection mirror 37: Lens rotation means 38, 38A, 38B: Ellipse changing means 39: Prism 40: Load lock chamber 45: Mask cleaning table 50: Control unit 60: Mask dry cleaning apparatus 100: Organic EL device manufacturing apparatus A to D: Cluster Dc: Length of major axis of elliptical laser beam Dr: Circular laser beam diameter emitted from the laser light source H: Stripping region Hc maximum stripping width.

Claims (13)

In a mask dry cleaning apparatus for irradiating an attached vapor deposition material attached to a mask with laser light emitted from a laser light source and cleaning the mask,
A mask dry cleaning apparatus comprising: an ellipse changing unit that changes the laser beam into an elliptical shape, and laser beam scanning unit that irradiates and cleans the deposited evaporation material of the mask with the elliptical laser beam. .   The mask dry cleaning apparatus according to claim 1, wherein the laser beam scanning unit performs line scanning with the elliptical laser beam.   3. The mask dry cleaning apparatus according to claim 1, wherein the ellipse changing unit changes the major axis direction of the elliptical shape to be a scanning direction between the lines. 4.   The mask dry cleaning apparatus according to claim 2, wherein the scanning is performed by a galvanometer mirror.   5. The mask dry cleaning apparatus according to claim 4, wherein the ellipse changing means is provided on the output side of the galvanometer mirror.   5. The mask dry cleaning apparatus according to claim 4, wherein the ellipse changing means is provided between the galvanometer mirror and the laser light source.   The ellipse changing means is a lens that moves or rotates at least the plano-convex cylindrical lens so that the optical axis coupling between the bowl-shaped plano-convex cylindrical lens and the laser light source of the plano-convex cylindrical lens is decentered from the optical axis of the laser light source. 4. The mask dry cleaning apparatus according to claim 1, 2 or 3, further comprising a driving unit. In a mask dry cleaning method of cleaning the mask by irradiating the deposited vapor deposition material attached to the mask with laser light emitted from a laser light source,
A mask dry cleaning method, comprising: an ellipse changing step for changing the laser beam into an elliptical shape; and a laser beam scanning step for irradiating and cleaning the elliptical laser beam on the adhesion material of the mask.   The mask dry cleaning method according to claim 8, wherein the scanning is performed by a galvanometer mirror.   In the ellipse changing step, at least the plano-convex cylindrical lens is moved or rotated so that the optical axis coupling between the bowl-shaped plano-convex cylindrical lens and the laser light source of the plano-convex cylindrical lens is decentered from the optical axis of the laser light source. The mask dry cleaning method according to claim 8 or 9, wherein:   A vacuum deposition chamber for depositing a deposition material on an object to be processed through a mask to form a film, a mask dry cleaning apparatus according to any one of claims 1 to 7, and the vacuum deposition chamber and the mask dry cleaning apparatus. A manufacturing apparatus, comprising: a vacuum isolating means provided in a connecting portion; and a conveying means for conveying the mask between the vacuum vapor deposition chamber and the mask dry cleaning apparatus via the vacuum isolating means.   12. The manufacturing apparatus according to claim 11, wherein the vacuum isolation means is a gate valve, and cleaning of the mask in the mask dry cleaning apparatus is performed in a vacuum atmosphere.   12. The manufacturing apparatus according to claim 11, wherein the vacuum isolation means is a load lock chamber, and cleaning of the mask in the mask dry cleaning apparatus is performed in an atmospheric pressure atmosphere.

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