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JP2011171345A - Light emitting device and method of manufacturing the same - Google Patents

Light emitting device and method of manufacturing the same Download PDF

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JP2011171345A
JP2011171345A JP2010031093A JP2010031093A JP2011171345A JP 2011171345 A JP2011171345 A JP 2011171345A JP 2010031093 A JP2010031093 A JP 2010031093A JP 2010031093 A JP2010031093 A JP 2010031093A JP 2011171345 A JP2011171345 A JP 2011171345A
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emitting device
light emitting
substrate
light
peripheral wall
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Tsutomu Okubo
努 大久保
Masaki Odawara
正樹 小田原
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

【課題】発光装置の周壁体による光の反射量を向上させることで、発光装置のLED搭載表面に対向する方向の発光量を増加させることができるとともに色温度特性を向上でき、小型化及び加工が容易な発光装置及びその製造方法を提供する。
【解決手段】電極12を有する基板11と、前記基板上に搭載された発光素子13と、基板の発光素子搭載面上に設けられ、発光素子を収容するキャビティを基板とともに画定する周壁体14Aと、を有し、前記周壁体は、光反射性を有する粒子を内部に分散させた樹脂で形成されている。
【選択図】図1
By improving the amount of light reflected by the peripheral wall of the light emitting device, the amount of light emitted in the direction facing the LED mounting surface of the light emitting device can be increased and the color temperature characteristics can be improved, and the size and processing can be reduced. Provided are a light emitting device and a method for manufacturing the same.
A substrate having an electrode, a light emitting element mounted on the substrate, a peripheral wall body provided on a light emitting element mounting surface of the substrate, and defining a cavity for housing the light emitting element together with the substrate. The peripheral wall body is formed of a resin in which particles having light reflectivity are dispersed.
[Selection] Figure 1

Description

本発明は、発光装置及びその製造方法に関し、特に発光ダイオード(Light Emitting Diode:LED)を有する発光装置及びその製造方法に関する。   The present invention relates to a light emitting device and a manufacturing method thereof, and more particularly to a light emitting device having a light emitting diode (LED) and a manufacturing method thereof.

従来、良好な加工性及びコスト面の観点から、プリント基板を加工した発光装置が製造されている。このような発光装置では、はんだ実装において瞬間的にではあるが例えば、260℃程度の温度に晒されることから、耐熱性が良好で熱膨張の小さいガラスエポキシ基板が使用されている。従来の発光装置においては、スルーホール等を利用して基板表裏面に回路(電極パターン層)を形成した基板に、LED素子が搭載されている基板面と対向する方向に放射される光(放射光)の取り出し効率を向上させるために、円形や四角形にくり抜かれた開口部を有する基板を貼り合わせ、これをマトリクス状に切断することによって周壁体を有する発光装置が製造されていた。   Conventionally, a light emitting device obtained by processing a printed circuit board has been manufactured from the viewpoint of good processability and cost. In such a light emitting device, a glass epoxy substrate having good heat resistance and low thermal expansion is used because it is exposed to a temperature of about 260 ° C. instantaneously in solder mounting. In a conventional light emitting device, light (radiation) radiated in a direction opposite to the substrate surface on which the LED element is mounted on a substrate on which a circuit (electrode pattern layer) is formed on the front and back surfaces of the substrate using through holes or the like. In order to improve the light extraction efficiency, a light emitting device having a peripheral wall has been manufactured by bonding a substrate having an opening cut into a circle or a rectangle and cutting the substrate into a matrix.

このような周壁体を有する従来の発光装置としては、発光体としてLED素子を使用し、樹脂と、樹脂表面に形成された金属反射層とからなっている周壁体を有する発光装置が知られている(特許文献1)。   As a conventional light-emitting device having such a peripheral wall body, a light-emitting device using a LED element as a light-emitting body and having a peripheral wall body made of a resin and a metal reflective layer formed on the resin surface is known. (Patent Document 1).

また、発光体にLED素子を使用し、周壁体にガラス織布に反射性粒子を含有している樹脂を含浸させて形成したガラスエポキシ基板を使用している発光装置も知られている。   There is also known a light emitting device using a glass epoxy substrate formed by impregnating a peripheral wall with a resin containing reflective particles in a glass woven fabric using an LED element.

特開2001−144333号公報JP 2001-144333 A

しかし、金属反射層を備えた周壁体を有している発光装置においては、発光装置を小型化した際に、金属反射膜とLED素子が搭載されている基板表面の配線との間の絶縁確保が困難となり、発光装置の小型化の障害となっていた。また、金属反射膜と周壁体によって囲まれたキャビティ内に注入される封止樹脂との界面で剥離が生じたり、温度変化によって封止樹脂にクラックが入り、ボンディングワイヤが切断される等の問題が生じたりして製造時の歩留まりが悪化していた。   However, in a light emitting device having a peripheral wall with a metal reflective layer, when the light emitting device is downsized, insulation between the metal reflective film and the wiring on the substrate surface on which the LED element is mounted is ensured. This makes it difficult to reduce the size of the light emitting device. In addition, there are problems such as peeling at the interface between the metal reflective film and the sealing resin injected into the cavity surrounded by the peripheral wall, or cracks in the sealing resin due to temperature changes, and the bonding wire is cut. Or the production yield deteriorated.

また、ガラスエポキシ基板からなる周壁体を有している発光装置においては、周壁体の側部に露出したガラス繊維を通じて光が基板と平行方向に導かれることで光が外部に漏出してしまい、発光装置のLED素子が搭載されている面に対向する方向に放射される光の取り出し効率が低下してしまうという問題がある。この光漏れは、発光装置を小型化するためにキャビティ構造体の周辺壁部の厚さを薄くするほど顕著となり、発光装置の小型化の障害となっていた。また、このような周壁体を有する発光装置の製造においては、ダイシングの際に強固なガラス繊維を切断する必要が有り、当該ガラス繊維の切断が製造時の加工性を低下させる要因となっていた。   Further, in the light emitting device having a peripheral wall made of a glass epoxy substrate, light is leaked to the outside by being guided in a direction parallel to the substrate through the glass fiber exposed to the side of the peripheral wall, There exists a problem that the extraction efficiency of the light radiated | emitted in the direction facing the surface where the LED element of the light-emitting device is mounted will fall. This light leakage becomes more prominent as the thickness of the peripheral wall portion of the cavity structure is reduced in order to reduce the size of the light emitting device, which has been an obstacle to downsizing of the light emitting device. Further, in the manufacture of a light emitting device having such a peripheral wall body, it is necessary to cut strong glass fibers at the time of dicing, and the cutting of the glass fibers has been a factor of reducing workability at the time of manufacture. .

本発明は、上記した点に鑑みてなされたものであり、光取り出し効率の高い発光装置を提供することを目的とする。また、小型化が容易であり、製造時の加工容易性及び歩留まりを向上させることが可能な発光装置、及びその製造方法を提供することを目的とする。   The present invention has been made in view of the above-described points, and an object thereof is to provide a light-emitting device with high light extraction efficiency. It is another object of the present invention to provide a light-emitting device that can be easily downsized and can improve processability and yield during manufacturing, and a method for manufacturing the light-emitting device.

本発明の発光装置は、電極を有する基板と、基板上に搭載された発光素子と、基板の発光素子搭載面上に設けられ、発光素子を収容するキャビティを基板とともに画定する周壁体と、を有し、上記周壁体は、光反射性を有する粒子を内部に分散させた樹脂で形成されていることを特徴とする。   A light-emitting device of the present invention includes a substrate having an electrode, a light-emitting element mounted on the substrate, and a peripheral wall body that is provided on the light-emitting element mounting surface of the substrate and defines a cavity that accommodates the light-emitting element together with the substrate. And the peripheral wall body is formed of a resin in which particles having light reflectivity are dispersed.

また、本発明の発光装置を製造する方法は、電極が形成された基板に、基板のLED素子搭載面とともにキャビティを形成するキャビティ構造体を設けるステップと、キャビティ内で露出している基板表面に発光素子を搭載するステップと、を含み、上記キャビティ構造体は、光反射性を有する粒子を内部に分散させた樹脂で形成されていることを特徴とする。   The method of manufacturing the light emitting device of the present invention includes a step of providing a cavity structure that forms a cavity together with an LED element mounting surface of a substrate on a substrate on which an electrode is formed, and a substrate surface exposed in the cavity. Mounting the light emitting element, wherein the cavity structure is formed of a resin in which particles having light reflectivity are dispersed.

本発明の発光装置及び発光装置の製造方法によれば、発光装置の周壁体による光の反射量を向上させることで、発光装置のLED搭載表面に対向する方向の発光量を増加させることができる。また、小型化及び加工が容易な発光装置を実現可能である。   According to the light emitting device and the method for manufacturing the light emitting device of the present invention, it is possible to increase the amount of light emitted in the direction facing the LED mounting surface of the light emitting device by improving the amount of light reflected by the peripheral wall of the light emitting device. . In addition, a light emitting device that can be easily downsized and processed can be realized.

本発明の実施例1の発光装置の断面図である。It is sectional drawing of the light-emitting device of Example 1 of this invention. 本発明の実施例1の発光装置の平面図である。It is a top view of the light-emitting device of Example 1 of this invention. 本発明の実施例1の発光装置の製造過程の断面図である。It is sectional drawing of the manufacture process of the light-emitting device of Example 1 of this invention. 本発明の実施例1の発光装置の製造過程の一工程の平面図である。It is a top view of 1 process of the manufacturing process of the light-emitting device of Example 1 of this invention. 比較例の発光装置の断面図である。It is sectional drawing of the light-emitting device of a comparative example.

図1は、本発明の実施例1のLED素子を発光素子として用いた発光装置の断面図であり、図2は、本発明の実施例1の発光装置の光放射面から見た平面図である。なお、図1は、図2のA−A線に沿った断面図である。   FIG. 1 is a cross-sectional view of a light emitting device using the LED element of Example 1 of the present invention as a light emitting element, and FIG. 2 is a plan view seen from the light emitting surface of the light emitting device of Example 1 of the present invention. is there. 1 is a cross-sectional view taken along line AA in FIG.

図1及び図2に示すように、発光装置10は、基板11と、電極12と、LED素子13と、周壁体14Aと、封止樹脂15と、を備えている。基板11上には電極12が形成され、LED素子13は基板11上にダイボンディングにより搭載され、電極12とボンディングワイヤ16によって電気的に接続されている。周壁体14Aは、基板11上に設けられ、周壁体14Aと基板11とによってLED素子13を露出させるキャビティ(凹部)17が画定され(図3)、キャビティ17には封止樹脂15が充填されている。   As shown in FIGS. 1 and 2, the light emitting device 10 includes a substrate 11, an electrode 12, an LED element 13, a peripheral wall body 14 </ b> A, and a sealing resin 15. An electrode 12 is formed on the substrate 11, and the LED element 13 is mounted on the substrate 11 by die bonding, and is electrically connected to the electrode 12 by a bonding wire 16. 14 A of surrounding wall bodies are provided on the board | substrate 11, and the cavity (recessed part) 17 which exposes the LED element 13 by the surrounding wall body 14A and the board | substrate 11 is demarcated (FIG. 3), and the sealing resin 15 is filled into the cavity 17 ing.

基板11は、厚さ0.1mmのガラスエポキシ基板であり、複数のスルーホールを有する。ガラスエポキシ基板は、ガラス繊維を布状に編んだガラス織布に、エポキシ樹脂を含浸させて構成される。電極12は、基板11に形成されており、LED素子13の搭載面は、Cu箔/Cuメッキ/Niメッキ/Agメッキが形成されている。また、LED素子13の搭載面と反対側の面には、Cu箔/Cuメッキ/Niメッキ/Agメッキ/Auメッキが形成されており、スルーホール内にはCuメッキが形成されている。   The substrate 11 is a glass epoxy substrate having a thickness of 0.1 mm, and has a plurality of through holes. The glass epoxy substrate is configured by impregnating an epoxy resin into a glass woven fabric in which glass fibers are knitted into a cloth shape. The electrode 12 is formed on the substrate 11, and the mounting surface of the LED element 13 is formed of Cu foil / Cu plating / Ni plating / Ag plating. Also, Cu foil / Cu plating / Ni plating / Ag plating / Au plating is formed on the surface opposite to the mounting surface of the LED element 13, and Cu plating is formed in the through hole.

LED素子13は、基板11上の所定位置に樹脂系接着剤やはんだ等によって固定載置されている。LED素子13は、例えば、青色LED素子である。また、LED素子13は、ボンディングワイヤ16によって基板11上の電極12に接続されている。   The LED element 13 is fixedly placed at a predetermined position on the substrate 11 with a resin adhesive, solder, or the like. The LED element 13 is, for example, a blue LED element. The LED element 13 is connected to the electrode 12 on the substrate 11 by a bonding wire 16.

周壁体14Aは、キャビティ17がLED素子13を露出させるように、エポキシ接着剤によって基板11上に固定されている。後述するように、周壁体14Aは、光反射性粒子が分散されたエポキシ樹脂により形成されている。   The peripheral wall body 14A is fixed on the substrate 11 with an epoxy adhesive such that the cavity 17 exposes the LED element 13. As will be described later, the peripheral wall body 14A is formed of an epoxy resin in which light-reflective particles are dispersed.

封止樹脂15は、周壁体14A及び基板11によって画定されたキャビティ17内にLED素子13を埋設するように設けられている。封止樹脂15は、YAG(イットリウム・アルミニウム・ガーネット)蛍光体を分散させた有機変性シリコーン硬化樹脂からなっている。なお、封止樹脂15は、エポキシ樹脂またはウレタン樹脂等の他の光透過性樹脂でもよく、YAG蛍光体以外の他の蛍光体や散乱材を含有してもよい。   The sealing resin 15 is provided so as to embed the LED element 13 in the cavity 17 defined by the peripheral wall body 14 </ b> A and the substrate 11. The sealing resin 15 is made of an organically modified silicone cured resin in which a YAG (yttrium, aluminum, garnet) phosphor is dispersed. The sealing resin 15 may be another light-transmitting resin such as an epoxy resin or a urethane resin, and may contain a phosphor other than the YAG phosphor or a scattering material.

次に、図3及び図4を参照して、図1及び図2に示す発光装置10の製造方法について詳細に説明する。図3(a)−(d)は、発光装置10の製造方法の各工程を示す断面図である。図4は、当該製造方法の1工程(図3(b))を示す平面図である。すなわち、図4のB−B線に沿った断面図が図3(b)である。   Next, with reference to FIG. 3 and FIG. 4, the manufacturing method of the light-emitting device 10 shown in FIG.1 and FIG.2 is demonstrated in detail. FIGS. 3A to 3D are cross-sectional views illustrating steps of the method for manufacturing the light emitting device 10. FIG. 4 is a plan view showing one step (FIG. 3B) of the manufacturing method. That is, FIG. 3B is a cross-sectional view taken along line BB in FIG.

発光装置10の製造においては、まず図3(a)に示すように、表面に電極12が形成された平板状のガラスエポキシ基板11を用意して、開口部を有する平板状のキャビティ構造体14を接着剤(図示せず)により基板11上に貼り合わせた。キャビティ構造体14は、酸化チタンや硫酸バリウム粒子等からなる光反射性粒子を分散させたエポキシ樹脂により形成された枠体である。また、エポキシ樹脂には、熱膨張を抑制するためのガラス粒子も分散されている。尚、周壁体14Aには、ガラス繊維(繊維状のガラス)は混合されていない。また、接着剤には、エポキシ樹脂に酸化チタン等を混合したものを使用した。なお、光反射性粒子は、一様に分散されているのが反射性の観点から好ましい。より詳細には、キャビティ構造体14は、長辺の長さL1が1.8mm、短辺の長さL2が1.4mmの長方形であるキャビティ17を、基板11とともに形成する周壁体14Aからなる枠体である。また、キャビティ構造体14のLED素子13が搭載される表面に対して垂直な方向の厚さH1は0.4mmである。本実施例では、キャビティ17は、マトリクス状(図では3行3列)に配列されている。図4に示すように、また、キャビティ周囲を囲む周壁体14Aを形成する壁部は、キャビティ構造体14の最外部における厚さW1が0.1mmであり、キャビティ17の各々の間の厚さW2が0.3mmである。   In the manufacture of the light emitting device 10, first, as shown in FIG. 3A, a flat glass epoxy substrate 11 having an electrode 12 formed on the surface is prepared, and a flat cavity structure 14 having an opening. Was bonded onto the substrate 11 with an adhesive (not shown). The cavity structure 14 is a frame formed of an epoxy resin in which light reflective particles made of titanium oxide, barium sulfate particles, or the like are dispersed. In addition, glass particles for suppressing thermal expansion are also dispersed in the epoxy resin. Note that glass fiber (fibrous glass) is not mixed in the peripheral wall body 14A. Moreover, what mixed the titanium oxide etc. in the epoxy resin was used for the adhesive agent. In addition, it is preferable from a reflective viewpoint that the light-reflective particles are uniformly dispersed. More specifically, the cavity structure 14 includes a peripheral wall body 14A that forms, together with the substrate 11, a cavity 17 having a rectangular shape with a long side length L1 of 1.8 mm and a short side length L2 of 1.4 mm. It is a frame. The thickness H1 in the direction perpendicular to the surface on which the LED element 13 of the cavity structure 14 is mounted is 0.4 mm. In this embodiment, the cavities 17 are arranged in a matrix (3 rows and 3 columns in the figure). As shown in FIG. 4, the wall portion forming the peripheral wall body 14 </ b> A surrounding the cavity has a thickness W <b> 1 at the outermost part of the cavity structure 14 of 0.1 mm, and the thickness between the cavities 17. W2 is 0.3 mm.

次に、図3(b)に示すように、キャビティ17内の露出した基板11上に、一辺の長さが0.9mm、厚さ170μmの青色LED素子13を、1つのキャビティ17に対して1個、コレットを用いて載置してダイボンディングし、LED素子13と電極12とボンディングワイヤ16によるワイヤボンディングによって電気的に接続した。なお、キャビティ17内には、2つ以上のLED素子を配しても良い。   Next, as shown in FIG. 3 (b), a blue LED element 13 having a side length of 0.9 mm and a thickness of 170 μm is formed on the exposed substrate 11 in the cavity 17 with respect to one cavity 17. One was placed using a collet and die bonded, and was electrically connected by wire bonding using the LED element 13, the electrode 12 and the bonding wire 16. In the cavity 17, two or more LED elements may be arranged.

次に、図3(c)に示すように、蛍光体を含む封止樹脂15を、ディスペンス法等により、LED素子13が埋設されるようにキャビティ17に充填した。次に、基板全体を150℃の炉内に投入し、5時間加熱して封止樹脂15を硬化させた。封止樹脂15は、YAG蛍光体を含む有機変性シリコーン樹脂であり、有機変性シリコーンに対するYAG蛍光体の割合は、22wt%とした。なお、封止樹脂15は、エポキシ樹脂またはウレタン樹脂等の他の光透過性樹脂からなっていても良く、光透過性樹脂が、YAG蛍光体以外の他の蛍光体や散乱材を含有していてもよい。また、封止樹脂15は、硬化後のショアA硬さが70以上または硬化後のショアD硬さが50以上であるのが好ましい。
最後に、図3(d)に示すようにLED素子13が搭載された基板を所定の大きさに切断した。切断方法は、通常のダイシング手法を使用した。完成した発光装置10を発光面から見た上面図が図2である。完成した発光装置10の寸法は、長辺L3が2.0mm、短辺L4が1.6mm、電極及び接着剤の厚さを含めた厚さH2は0.7mmであった。
Next, as shown in FIG. 3C, a sealing resin 15 containing a phosphor was filled in the cavity 17 by a dispensing method or the like so that the LED element 13 was embedded. Next, the entire substrate was put into a furnace at 150 ° C. and heated for 5 hours to cure the sealing resin 15. The sealing resin 15 is an organically modified silicone resin containing a YAG phosphor, and the ratio of the YAG phosphor to the organically modified silicone was 22 wt%. The sealing resin 15 may be made of another light transmissive resin such as an epoxy resin or a urethane resin, and the light transmissive resin contains a phosphor other than the YAG phosphor or a scattering material. May be. Moreover, it is preferable that the sealing resin 15 has a Shore A hardness of 70 or more after curing or a Shore D hardness of 50 or more after curing.
Finally, as shown in FIG. 3D, the substrate on which the LED elements 13 were mounted was cut into a predetermined size. As a cutting method, a normal dicing method was used. FIG. 2 is a top view of the completed light emitting device 10 as viewed from the light emitting surface. As for the dimensions of the completed light emitting device 10, the long side L3 was 2.0 mm, the short side L4 was 1.6 mm, and the thickness H2 including the thicknesses of the electrodes and the adhesive was 0.7 mm.

本発明の発光装置10の効果を確認するために形成した比較例の発光装置20について以下に説明する。比較例の発光装置20は、本発明の実施例1のキャビティ構造体を使用せずに、図5に示すようにガラス織布に反射性粒子を含有している樹脂を含浸させて形成した周壁体21を用いた点を除いては、上記実施例と同様とした。周壁体21は、ガラス織布層21A及び反射性粒子含有樹脂層21Bを有する。   A comparative light-emitting device 20 formed to confirm the effect of the light-emitting device 10 of the present invention will be described below. The light emitting device 20 of the comparative example is a peripheral wall formed by impregnating a glass woven fabric with a resin containing reflective particles as shown in FIG. 5 without using the cavity structure of Example 1 of the present invention. Except for the point of using the body 21, it was the same as the above-described example. The peripheral wall 21 has a glass woven fabric layer 21A and a reflective particle-containing resin layer 21B.

すなわち、比較例の発光装置20は、LED素子への給電のための電極を有するガラスエポキシ基板上に、ガラス織布に酸化チタン粒子や硫酸バリウム粒子等を含有する樹脂を含浸させた周壁体21を有し、周壁体21がガラス織布層21A及び反射性粒子含有樹脂層21Bを有している。なお、周壁体の形状や大きさ等、その他の点は実施例1と同じである。また、実施例1に使用されたのと同一の構造及び特性を有するLED素子が、実施例1と同じ位置にダイボンディングされており、キャビティ内が実施例1と同一の材料からなる封止樹脂によってLED素子を埋設せしめるように充填されている。また、実施例1及び比較例の発光装置の封止樹脂内の蛍光体量はいずれも22wt%とした。   That is, in the light emitting device 20 of the comparative example, a peripheral wall body 21 in which a glass woven fabric is impregnated with a resin containing titanium oxide particles, barium sulfate particles, and the like on a glass epoxy substrate having an electrode for supplying power to the LED elements. The peripheral wall body 21 has a glass woven fabric layer 21A and a reflective particle-containing resin layer 21B. The other points such as the shape and size of the peripheral wall body are the same as those in the first embodiment. In addition, the LED element having the same structure and characteristics as used in Example 1 is die-bonded at the same position as in Example 1, and the inside of the cavity is made of the same material as in Example 1 The LED element is filled so as to be embedded. In addition, the phosphor amount in the sealing resin of the light emitting devices of Example 1 and Comparative Example was 22 wt%.

なお、実施例1の発光装置10の周壁体及び比較例の発光装置20の周壁体22の反射性粒子含有樹脂層の反射率に有意な差が無いことも確認した。すなわち、基板のLED素子搭載面に平行な周壁体14A及び周壁体21の主面(反射性粒子含有樹脂層21B)の反射率には、400nmから700nmの間の波長範囲において有意な差が無いことを測定により確認した。   In addition, it confirmed that there was no significant difference in the reflectance of the reflective particle containing resin layer of the surrounding wall body of the light-emitting device 10 of Example 1, and the surrounding wall body 22 of the light-emitting device 20 of a comparative example. That is, the reflectance of the peripheral wall body 14A parallel to the LED element mounting surface of the substrate and the main surface of the peripheral wall body 21 (the reflective particle-containing resin layer 21B) has no significant difference in the wavelength range between 400 nm and 700 nm. This was confirmed by measurement.

実施例1及び比較例の発光装置を発光させた際の比較結果を表1に示す。なお、LED素子の発光輝度が同一となる駆動電流によって実施例1及び比較例のそれぞれのLED素子を駆動した。なお、20個のサンプルについて測定し、その平均値で示している。   Table 1 shows a comparison result when the light emitting devices of Example 1 and the comparative example were caused to emit light. In addition, each LED element of Example 1 and a comparative example was driven with the drive current from which the light emission luminance of an LED element becomes the same. In addition, it measured about 20 samples and has shown by the average value.

Figure 2011171345
Figure 2011171345

表1は、実施例1及び比較例の発光装置の放射面(素子搭載面)からの放射光の光度(カンデラ、cd)、相関色温度(ケルビン、K)及び全光束(ルーメン、lm)を比較して示している。   Table 1 shows the luminous intensity (candela, cd), correlated color temperature (Kelvin, K), and total luminous flux (lumen, lm) from the radiation surface (element mounting surface) of the light emitting devices of Example 1 and Comparative Example. Shown in comparison.

表1に示すように、実施例1の発光装置の光度(IE)及び全光束(LE)は、比較例の光度(IC)及び全光束(TC)に比べて1.07倍(すなわち7%の増加)であった。比較例の発光装置においては、LED素子からの放射光がガラス織布層21Aによって横方向(放射面に水平な方向)に導波されて失われるため光度及び全光束が小さい。さらに、比較例の発光装置より実施例1の発光装置の方が黄色みの強い発光が得られた。これは、実施例1においては、周壁体によって反射されるLED放射光成分が増加していることを意味している。すなわち、周壁体による反射成分がさらに封止樹脂内を通過して、放射面から放射されるため、封止樹脂内における光路長が長く黄色みの強い光の成分が増加していることを意味している。   As shown in Table 1, the luminous intensity (IE) and the total luminous flux (LE) of the light emitting device of Example 1 are 1.07 times (that is, 7%) compared with the luminous intensity (IC) and the total luminous flux (TC) of the comparative example. Increase). In the light emitting device of the comparative example, since the emitted light from the LED element is lost by being guided in the lateral direction (direction parallel to the radiation surface) by the glass woven fabric layer 21A, the luminous intensity and the total luminous flux are small. Further, the light emitting device of Example 1 emitted light with a stronger yellow color than the light emitting device of the comparative example. This means that in Example 1, the LED radiation component reflected by the peripheral wall is increasing. In other words, since the reflection component by the peripheral wall further passes through the sealing resin and is emitted from the radiation surface, it means that the light path length in the sealing resin is long and the yellowish light component is increasing. is doing.

そこで、比較例の発光装置の色温度を、比較例の封止樹脂に含まれるYAG蛍光体の量を増加させることにより、実施例1と同様の色温度になるように調整して再度比較実験を行った。その実験結果を表2に示す。   Therefore, the color temperature of the light emitting device of the comparative example was adjusted to the same color temperature as in Example 1 by increasing the amount of the YAG phosphor contained in the sealing resin of the comparative example, and again the comparative experiment. Went. The experimental results are shown in Table 2.

Figure 2011171345
Figure 2011171345

表2は、実施例1及び比較例の発光装置の封止樹脂内の蛍光体濃度(重量%、wt%)放射面(素子搭載面)からの放射光の光度(cd)を比較して示している。相関色温度(K)も参考として示している。   Table 2 compares the phosphor concentration (wt%, wt%) in the sealing resin of the light emitting device of Example 1 and the comparative example, and the luminous intensity (cd) of the emitted light from the emitting surface (element mounting surface). ing. Correlated color temperature (K) is also shown for reference.

表2に示すように、実施例1の発光装置は、比較例に発光装置に比べて、同様の色温度を得るための蛍光体の量を約8%減らすことができ、かつ約5%の光度増加を達成することができた。   As shown in Table 2, the light emitting device of Example 1 can reduce the amount of phosphor for obtaining the same color temperature by about 8% and about 5% compared to the light emitting device of the comparative example. An increase in luminous intensity could be achieved.

本発明の発光装置においては、LED素子から放射される光を反射させるための周壁体を、光反射性粒子を分散させた樹脂によって形成している。これにより、従来の発光装置よりも、小型化時の絶縁性が高くかつ歩留まりの高い発光装置を実現することができる。また、周壁体を貫通して失われる光を減少させることができるので、従来の発光装置よりも発光装置の発光効率を増加させることができる。また、周壁体に反射されて蛍光体を含有した封止樹脂内における光路長が長い光の量の割合が増加するため、従来の発光装置よりも少ない蛍光体で発光色(色温度)の調整が可能である。さらに、本発明の発光装置の製造においては、光反射性粒子を分散させた樹脂からなるキャビティ構造体を用いているため、加工が高精度にでき、かつ容易である。例えば、従来のガラス織布を用いた発光装置の場合のように、キャビティ形成やダイシングの際に強固なガラス繊維を切断する必要がない。   In the light emitting device of the present invention, the peripheral wall body for reflecting the light emitted from the LED element is formed of a resin in which light reflecting particles are dispersed. Accordingly, it is possible to realize a light-emitting device with higher insulation and higher yield than conventional light-emitting devices. In addition, since light lost through the peripheral wall body can be reduced, the light emission efficiency of the light emitting device can be increased as compared with the conventional light emitting device. Moreover, since the ratio of the amount of light having a long optical path length in the sealing resin containing the phosphor reflected by the peripheral wall body increases, the emission color (color temperature) can be adjusted with less phosphor than the conventional light emitting device. Is possible. Furthermore, in the manufacture of the light emitting device of the present invention, since a cavity structure made of a resin in which light reflecting particles are dispersed is used, processing can be performed with high precision and is easy. For example, unlike a conventional light emitting device using a glass woven fabric, it is not necessary to cut a strong glass fiber during cavity formation or dicing.

なお、実施例1においては、基板11にガラスエポキシ基板を用いたが、他の樹脂基板またはセラミック基板等を用いてもよい。また、実施例1においては、LED素子13と電極12との電気的接続はワイヤボンディング接続を用いたが、LED素子13の裏面にバンプを設け、フリップチップ接続を行ってもよい。また、LED素子13の発光波長は、上記実施例に記載の波長に限らない。この場合、発光素子の発光波長に応じて、好適な光反射率が得られるように適宜光反射性粒子の材料等を選択すればよい。また、キャビティの形状は、長方形としたが、円形等任意の形状とすることが可能である。また、上記実施例においては、3行3列の9個の発光装置を1枚の基板から製造する場合を例に示したが、これに限らない。さらに、上述した実施例における種々の数値、寸法、材料等は、例示に過ぎず、使用される発光素子等に応じて、適宜選択することができる。   In the first embodiment, a glass epoxy substrate is used as the substrate 11, but another resin substrate, a ceramic substrate, or the like may be used. Further, in the first embodiment, the wire connection is used for the electrical connection between the LED element 13 and the electrode 12, but a bump may be provided on the back surface of the LED element 13 to perform the flip chip connection. Further, the emission wavelength of the LED element 13 is not limited to the wavelength described in the above embodiment. In this case, a material or the like of the light reflecting particles may be appropriately selected so that a suitable light reflectance can be obtained according to the emission wavelength of the light emitting element. Moreover, although the shape of the cavity is a rectangle, it can be an arbitrary shape such as a circle. Moreover, in the said Example, although the case where nine light-emitting devices of 3 rows and 3 columns were manufactured from one board | substrate was shown as an example, it is not restricted to this. Furthermore, various numerical values, dimensions, materials, and the like in the above-described embodiments are merely examples, and can be appropriately selected according to the light-emitting element used.

10 発光装置
11 基板
12 電極
13 LED素子
14 キャビティ構造体
14A 周壁体
15 封止樹脂
16 ボンディングワイヤ
17 キャビティ
20 比較例の発光装置
21 比較例の周壁体
21A ガラス織布層
21B 反射性粒子含有樹脂層
DESCRIPTION OF SYMBOLS 10 Light-emitting device 11 Substrate 12 Electrode 13 LED element 14 Cavity structure 14A Perimeter wall 15 Sealing resin 16 Bonding wire 17 Cavity 20 Light-emitting device 21 of comparative example Peripheral wall 21A of comparative example Glass woven fabric layer 21B Reflective particle-containing resin layer

Claims (6)

電極を有する基板と、
前記基板上に搭載された発光素子と、
前記基板の発光素子搭載面上に設けられ、前記発光素子を収容するキャビティを前記基板とともに画定する周壁体と、を有し、
前記周壁体は、光反射性を有する粒子を内部に分散させた樹脂で形成されていることを特徴とする発光装置。
A substrate having electrodes;
A light emitting device mounted on the substrate;
A peripheral wall provided on a light emitting element mounting surface of the substrate, and defining a cavity for housing the light emitting element together with the substrate;
The light emitting device, wherein the peripheral wall body is formed of a resin in which particles having light reflectivity are dispersed.
前記基板は、ガラス織布にエポキシ樹脂を含浸させたガラスエポキシ基板から構成され、前記周壁体は、ガラス粒子を分散したエポキシ樹脂で構成されることを特徴とする請求項1に記載の発光装置。   The light emitting device according to claim 1, wherein the substrate is made of a glass epoxy substrate obtained by impregnating a glass woven fabric with an epoxy resin, and the peripheral wall is made of an epoxy resin in which glass particles are dispersed. . 前記透光性樹脂は蛍光体粒子を含有することを特徴とする請求項1または2に記載の発光装置。   The light-emitting device according to claim 1, wherein the translucent resin contains phosphor particles. 前記周壁体を形成する樹脂は、ガラス粒子をさらに含有することを特徴とする請求項1乃至3に記載の発光装置。   The light-emitting device according to claim 1, wherein the resin forming the peripheral wall further contains glass particles. 発光装置を製造する方法であって、
電極が形成された基板に、前記基板のLED素子搭載面とともにキャビティを形成するキャビティ構造体を設けるステップと、
前記キャビティ内で露出している基板表面に発光素子を搭載するステップと、を含み、
前記キャビティ構造体は、光反射性を有する粒子を内部に分散させた樹脂で形成されていることを特徴とする方法。
A method for manufacturing a light emitting device, comprising:
Providing a substrate on which an electrode is formed with a cavity structure that forms a cavity together with an LED element mounting surface of the substrate;
Mounting a light emitting element on a substrate surface exposed in the cavity, and
The method is characterized in that the cavity structure is formed of a resin in which particles having light reflectivity are dispersed.
前記基板は、ガラス織布にエポキシ樹脂を含浸させたガラスエポキシ基板から構成され、前記キャビティ構造体は、ガラス粒子を分散したエポキシ樹脂で構成され、前記キャビティ構造体を設けるステップにおいて、前記基板と前記キャビティ構造体は、接着剤を介して貼り合わされることを特徴とする請求項5に記載の方法。   The substrate is composed of a glass epoxy substrate obtained by impregnating a glass woven fabric with an epoxy resin, the cavity structure is composed of an epoxy resin in which glass particles are dispersed, and in the step of providing the cavity structure, The method of claim 5, wherein the cavity structure is bonded through an adhesive.
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