JP2011166013A - Optical detection device, optical characteristic measurement device, optical characteristic measurement method, exposure apparatus, exposure method, and method of manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical detection device usable for optical characteristics measurement of an inspection object optical system having a large numerical aperture, to provide an optical characteristics measurement device using the same, to provide an optical characteristics measurement method, to provide an exposure apparatus, to provide an exposure method, and to provide a method of manufacturing a device. <P>SOLUTION: The optical detection device includes an imaging unit including: a substrate; an aperture pattern arranged on one surface of the substrate; a fluorescent unit having a fluorescent film formed on a surface of the substrate facing the one surface; a light guide member composed by bundling a plurality of optical fibers; and an imaging element arranged in contact with one surface of the light guide member. Here, a surface of the fluorescent unit on the fluorescent film side is arranged oppositely to a surface of the imaging unit on the light guide member side. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an imaging unit, an optical characteristic measuring apparatus, an optical characteristic measuring method, an exposure apparatus, and an exposure method that use a fluorescent film that emits fluorescence by ultraviolet rays.

  An exposure apparatus such as a stepper has been conventionally used as a manufacturing apparatus for micro devices such as semiconductor elements and liquid crystal display elements. In such an exposure apparatus, a high resolution is required for the projection optical system. In order to ensure a high resolution of the projection optical system, the optical characteristics of the projection optical system (for example, imaging characteristics such as distortion, curvature of field, wavefront aberration, etc.) are measured with high accuracy, and designed optical characteristics. It is necessary to compensate for an error between the actual optical characteristics.

  As an example of an optical characteristic measuring apparatus, a shearing interferometer has been conventionally known. In a shearing interferometer, light transmitted through an optical system is diffracted by a diffraction grating, and interference fringes of diffracted light are measured to measure the wavefront aberration of the optical system. In this case, in order to accurately measure the optical characteristics, it is desirable to use ultraviolet rays having a wavelength shorter than that of visible light. However, in order to measure interference fringes, it is necessary to visualize the diffracted light of ultraviolet rays.

  Patent Document 1 proposes various optical characteristic measuring devices having a fluorescent thin film that visualizes ultraviolet rays. As an example, Patent Document 1 converts ultraviolet light transmitted through a diffraction grating disposed on the image plane of the optical system to be tested or in the vicinity thereof into visible light by a fluorescent film formed on the surface of the imaging unit, A shearing interferometer is described in which interference fringes due to diffracted light are visualized by guiding light to an image pickup device via a fiber optic plate, and optical characteristics of a test optical system are measured. In Patent Document 1, it is proposed that, for example, the wavefront aberration of a projection optical system projected onto an exposure apparatus can be measured by using such an optical characteristic measurement apparatus. In the shearing interferometer described in Patent Document 1, in order to form interference fringes, the imaging units on which the diffraction grating and the fluorescent film are formed are arranged apart from each other.

PCT International Application Publication WO2009 / 113544

  On the other hand, in recent years, as the mounting density of semiconductor integrated circuits has been increased, a projection lens of an exposure apparatus has been used with a large numerical aperture (NA). It has been realized.

  An object of the present invention is to provide a photodetector that can be used for measuring optical characteristics of a test optical system having a large numerical aperture. Another object of the present invention is to provide an optical property measuring apparatus, an exposure apparatus, an exposure method, and a device manufacturing method using the above-described photodetection apparatus.

A photodetecting device according to an aspect of the present invention includes a substrate, a predetermined opening pattern formed on one surface of the substrate, and a fluorescent film formed on a surface facing the one surface of the substrate. A photodetecting device comprising an imaging unit having a fluorescence unit, a light guide member configured by bundling a plurality of optical fibers, and an image sensor disposed in contact with one surface of the light guide member, wherein the fluorescence unit The surface of the unit on the fluorescent film side is disposed so as to face the surface of the imaging unit on the light guide member side.
Preferably, the substrate transmits ultraviolet light, the fluorescent film emits visible light when excited by the ultraviolet light, and the light guide member guides the visible light.

The photodetection device may further include a protective film formed on an outer surface side of the opening pattern of the fluorescent unit or between the opening pattern and the substrate.
The photodetector may further include a reflective wavelength selection film that is formed on the outer surface side of the fluorescent film of the fluorescent unit, reflects ultraviolet light, and transmits fluorescence.
The photodetection device may further include an absorption wavelength selection film that is formed on the outer surface side of the fluorescent film of the fluorescent unit and absorbs ultraviolet rays and transmits fluorescence.

In the light detection device, the fluorescence unit and the imaging unit can be arranged via an intermediate layer having a thickness of 5 μm or less.
The intermediate layer can be formed of a silicon dioxide film.
In the photodetector, the fluorescent film includes a base material made of a fluoride capable of transmitting ultraviolet rays, and an activator doped in the base material, and the activator includes a transition element or a rare earth element. It can be a membrane.

The fluorescent film may be a fluorescent film that emits fluorescence by ultraviolet rays including vacuum ultraviolet rays.
The photodetector may be a photodetector that functions with respect to ultraviolet light with a wavelength of 193 nm oscillated from an ArF excimer laser or ultraviolet light with a wavelength of 248 nm oscillated from a KrF excimer laser.
The fluorescent unit may be a diffraction unit whose opening pattern is a diffraction grating.

An optical characteristic measuring apparatus according to an aspect of the present invention is an optical characteristic measuring apparatus that measures an optical characteristic of a test optical system, and includes an optical detection apparatus according to an aspect of the present invention.
The optical characteristic measuring apparatus according to the above aspect includes a member in which a pinhole is formed and a light detection device, the pinhole is disposed on an object plane of the test optical system, and the diffraction grating is a test optical. An optical characteristic measuring apparatus, wherein the imaging unit is arranged on an image plane of a system, and the imaging unit detects an interference fringe formed by diffracting measurement light that has passed through the optical system to be detected by the diffraction grating; can do.

An exposure apparatus according to an aspect of the present invention is an exposure apparatus that forms a pattern disposed on a first surface on a photosensitive substrate disposed on a second surface, the photodetecting device according to an aspect of the present invention. An exposure apparatus is provided. As one aspect of this exposure apparatus, the optical characteristic measuring apparatus according to the above aspect may be provided.
An exposure method according to an aspect of the present invention is an exposure method for forming a pattern disposed on a first surface on a photosensitive substrate disposed on a second surface, and an illumination step of illuminating the pattern;
Forming an image of the pattern illuminated by the illumination step on the photosensitive substrate using an optical system measured by the optical characteristic measuring device. .

  A device manufacturing method according to an aspect of the present invention includes an exposure step of exposing a pattern image onto a photosensitive substrate using the exposure method of the above aspect, and development for developing the photosensitive substrate exposed in the exposure step. A device manufacturing method comprising the steps of:

According to the photodetector according to the aspect of the present invention, the light that has passed through the opening pattern such as a diffraction grating is transmitted through the substrate and is incident on the fluorescent film formed on the surface facing the opening pattern. Therefore, even with light having a large incident angle such as light emitted from an optical system having a large numerical aperture, the fluorescent film can be excited and detected by the image sensor.
In the above photodetector, if the substrate is a substrate that can transmit ultraviolet light and the fluorescent film is excited by ultraviolet light to emit visible light, the ultraviolet light transmitted through the substrate is converted into visible light by the fluorescent film and guided. Light can be reliably detected by guiding light to the image sensor with the optical member.

In the above-mentioned photodetection device, by providing a protective film on the opening pattern, the photodetection device can be protected from damage even when used for inspection of an optical system such as an immersion lens.
In the light detection device, by providing a reflective or absorptive wavelength selection film, the light guide member can be protected from ultraviolet damage, and fluorescence can be detected.

  In the optical property measuring apparatus provided with the light detection device, it is possible to measure the optical property of the test optical system even when the incident angle of light from the test optical system is large. Therefore, by providing the exposure apparatus with this optical characteristic measuring apparatus, it is possible to perform precise exposure and to refine device design.

FIG. 1 is a cross-sectional view showing a schematic configuration of a light detection device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a schematic configuration of a photodetection device according to another embodiment of the present invention. FIG. 3 is a cross-sectional view showing a schematic configuration of a photodetection device according to another embodiment of the present invention. FIG. 4 is a cross-sectional view showing a schematic configuration of a photodetection device according to another embodiment of the present invention. FIG. 5 is a cross-sectional view showing a schematic configuration of a photodetection device according to another embodiment of the present invention. FIG. 6 is a cross-sectional view showing a schematic configuration of a photodetection device according to another embodiment of the present invention. FIG. 7 is a diagram showing a configuration of an example (shearing interferometer) of the optical property measuring apparatus according to the embodiment of the present invention. FIG. 8 is a schematic diagram showing a configuration example of an exposure apparatus in one embodiment of the present invention. FIG. 9 is a flowchart showing an example of a method for manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 10 is a flowchart showing an example of a method for manufacturing a liquid crystal display device according to an embodiment of the present invention.

<Photodetection device>
Embodiments of the present invention will be described below with reference to the drawings. In the present embodiment, the light used is preferably ultraviolet light having a wavelength of 300 nm or less. For example, an ultraviolet laser beam of an ArF excimer laser (wavelength: about 193 nm) or a KrF excimer laser (wavelength: about 248 nm) can be detected.

(Embodiment 1)
FIG. 1 is a cross-sectional view schematically illustrating one embodiment of a light detection device 100 according to an aspect of the present invention.
A diffraction unit 10 which is a fluorescent unit in the present embodiment includes a substrate 1, a diffraction grating 6 formed on the upper surface (light incident surface) of the substrate 1, and a fluorescent film 4 formed on the lower surface (light emitting surface) of the substrate. Have. The substrate 1 is formed of a member that transmits ultraviolet rays, and can be formed of, for example, silica glass. The diffraction grating 6 can be formed on the substrate as a metal film having a diffraction pattern or a metal oxide film. The fluorescent film 4 absorbs part of the ultraviolet rays and emits visible light fluorescence from the activated ions.

  In the present embodiment, a protective film 7 having water resistance or water repellency is further formed on the upper surface of the diffraction grating 6, and the outer surface of the fluorescent film (the surface opposite to the contact surface with the substrate 1, the lower surface in the figure) On top of this, a dielectric multilayer film 5 that reflects ultraviolet rays and transmits fluorescence is formed. The protective film 7 may be formed between the diffraction grating 6 and the substrate 1.

  The imaging unit 20 is composed of the FOP 2 and the imaging element 3, and the exit surface of the light guide member is in contact with the incident surface of the imaging element 3. The FOP (fiber optic plate) 2 is a light guide member configured by bundling and fusing a plurality of optical fibers. For example, a CCD can be used for the image sensor 3. The image sensor 3 can be connected to an image analysis device (not shown) using a conducting wire (not shown).

Ultraviolet rays enter the light detection device 100 from the protective film 7 side. The incident ultraviolet light passes through the protective film 7 and is diffracted by the diffraction grating 6. When the diffracted ultraviolet light passes through the substrate 1, interference between wavefronts having different diffraction orders occurs, and interference fringes are formed. Subsequently, the interference fringes between the diffracted lights are converted into a visible light image by the fluorescent film 4.
Subsequently, the dielectric multilayer film 5 reflects the ultraviolet rays (approximately 95% or more), and the fluorescence emitted from the fluorescent film 4 is transmitted (approximately 95% or more) and enters the FOP2. That is, the dielectric multilayer film 5 functions as a reflective wavelength selection film.
The light guide member 2 guides the visually converted image (interference fringes) to the emission end face. This visible image is received by the image sensor 3 and imaged.

  Additionally and / or alternatively, the light detection device can also detect ultraviolet light with a large incident angle. The numerical aperture (NA) of a semiconductor exposure apparatus has been increasing due to the demand for higher mounting density of semiconductor integrated circuits. Recently, NA ≧ 1 has been achieved using an immersion projection lens. Yes. In the photodetector of this embodiment, for example, the fluorescent film 4 is directly formed on the substrate 1 even when the ray angle of the diffracted light in the substrate 1 is about 70 ° at the maximum with respect to the normal to the substrate surface. It is possible to change the diffracted light to visible light. The reason is as follows.

In the photodetection device in which the fluorescent film is formed on the FOP side, the substrate and the fluorescent film are connected by mechanical contact. However, since there are minute irregularities on the surface of the fluorescent film, the concave portion of the fluorescent film and the substrate It is inevitable that an air layer remains between the surfaces. In such a light detection device, ultraviolet rays incident at a large angle from the inside of the substrate toward the back surface of the substrate are totally reflected on the back surface of the substrate in the region where the air layer exists, and cannot reach the fluorescent film, and are visible. Not converted to light.
On the other hand, in the photodetecting device of this embodiment, since the fluorescent film is formed directly on the substrate, there is no air layer at the interface, and all the ultraviolet rays incident on the back surface of the substrate are not totally reflected. And is converted to visible light. Since fluorescence emission is emitted toward all solid angles, it can reach the FOP even if there is an air layer after that. Therefore, a visible image of shearing interference fringes can be obtained even for an optical system that exceeds NA ≧ 1.
Such an effect is explained by an increase in the total reflection critical angle due to the fact that the refractive index of the fluorescent film is larger than the refractive index of the air layer. In the light detection device of this embodiment, since the fluorescent film is directly formed on the substrate, the fluorescent film can be excited by evanescent light even when ultraviolet rays are incident at a very large angle, and the visible light is converted into visible light. It is possible to convert.

  In the above-described embodiment, the diffraction unit 10 and the imaging element 20 do not need to be bonded, and the optical contact may be mechanically held. A gap (for example, an air layer, not shown) between the light exit surface of the diffraction unit (in this embodiment, the surface of the dielectric multilayer film 5) and the light incident surface of the image pickup unit (the surface of the light guide member 2). ) May be present. In that case, the thickness of the gap is preferably 5 μm or less.

  The total thickness of the fluorescent film 4 and the reflective film 5 combined with the gap is preferably equal to or less than the diameter of the optical fiber constituting the FOP of the light guide member 2. For example, if the diameter of the optical fiber constituting the FOP is 3 μm, the total thickness of the fluorescent film 4, the dielectric multilayer film (reflection film) 5 and the gap is preferably 3 μm or less.

(Embodiment 2)
FIG. 2 is a schematic view showing another embodiment of the photodetecting device according to the present invention. About the same structure as Embodiment 1, the same code | symbol is attached | subjected and the description is abbreviate | omitted.

In the present embodiment, the diffraction unit 10 and the imaging unit 20 are bonded via the bonding layer 8. The bonding layer 8 has a role of maintaining optical contact between the diffraction unit 10 and the imaging unit 20 and is made of a material that is transparent to fluorescence. For example, the bonding layer 8 can be formed using amorphous silicon dioxide (SiO ₂ ), low melting point glass, or the like. The thickness of the bonding layer 8 is desirably 5 μm or less. An optical contact between the light emitting surface of the diffraction unit 10 (the surface of the dielectric multilayer film 5 in the present embodiment) and the light incident surface of the imaging unit (the surface of the light guide member 2 in the present embodiment) is made through the junction 8. Retained.
The total thickness of the fluorescent film 4, the reflective film 5 and the bonding layer 8 is preferably less than or equal to the diameter of the optical fiber constituting the FOP2.

(Embodiment 3)
FIG. 3 is a schematic view showing another embodiment of the photodetecting device according to the present invention. About the same structure as Embodiment 1, the same code | symbol is attached | subjected and the description is abbreviate | omitted.
In this embodiment, in the diffraction unit, a dielectric film (absorbing film) 9 that absorbs ultraviolet rays and transmits fluorescence is formed on the outer surface (light emitting surface) of the fluorescent film formed on the (lower) surface of the substrate. It is filmed. In order to maintain the optical contact between the light emitting surface of the diffraction unit (the surface of the absorption film 9) and the light incident surface of the imaging unit (the surface of the light guide member 2), a gap (not shown) between the two is It is kept below a predetermined thickness. The thickness of the gap (air layer) is preferably 5 μm or less. The total thickness of the fluorescent film 4 and the absorption film 9 combined with the gap is preferably equal to or smaller than the diameter of the optical fiber constituting the FOP of the light guide member 2.

Ultraviolet rays enter the light detection device 100 from the protective film 7 side. The incident ultraviolet light passes through the protective film 7 and is diffracted by the diffraction grating 6. When the diffracted ultraviolet light passes through the substrate 1, interference between wavefronts having different diffraction orders occurs. Subsequently, the interference fringes between the diffracted lights are converted into a visible light image by the fluorescent film 4.
Subsequently, a part of the ultraviolet light is reflected by the interface between the absorption film 9 and the fluorescent film 4, but the part that has entered the film is almost absorbed. That is, the absorption film 9 functions as an absorptive wavelength selection film. On the other hand, the fluorescence emitted from the fluorescent film 4 passes through the absorption film 9 and enters the FOP2. FOP2 guides the visually converted image to the exit end face. This visible image is received by the image sensor 3 and imaged.

(Embodiment 4)
FIG. 4 is a schematic view showing another embodiment of the photodetecting device according to the present invention. About the same structure as Embodiment 3, the same code | symbol is attached | subjected and the description is abbreviate | omitted.
In the present embodiment, as in the third embodiment, the diffraction unit 10 and the imaging unit 20 are bonded via the bonding layer 8. The role and configuration of the bonding layer 8 are the same as those described in the third embodiment. The total thickness of the fluorescent film 4, the absorption film 9, and the bonding layer 8 is preferably less than or equal to the diameter of the optical fiber constituting the FOP2.

(Embodiment 5)
FIG. 5 is a schematic view showing another embodiment of the photodetecting device according to the present invention. About the same structure as Embodiment 1, the same code | symbol is attached | subjected and the description is abbreviate | omitted.
In this embodiment, a dielectric multilayer film 5 that reflects ultraviolet rays and transmits fluorescence is formed on the outer surface (light emitting surface) of the fluorescent film formed on one surface of the substrate 1 of the diffraction unit, and further, the outer surface thereof. A dielectric film (absorption film) 9 that absorbs ultraviolet rays and transmits fluorescence is formed on the lower surface (in the drawing).

  The dielectric multilayer film 5 reflects 95% or more of ultraviolet rays incident perpendicularly to the film surface, but the reflectance may be insufficient for obliquely incident ultraviolet rays. In that case, the optical performance of the fiber optic plate used for the light guide member 2 may be deteriorated by long-term ultraviolet irradiation. Therefore, in the present embodiment, an absorption film 9 is further formed on the reflective film 5.

  In order to maintain the optical contact between the light emitting surface of the diffraction unit (the surface of the absorption film 9) and the light incident surface of the imaging unit (the surface of the light guide member 2), a gap (not shown) between the two is It is kept below a predetermined thickness. The thickness of the gap (air layer) is preferably 5 μm or less. The total thickness of the fluorescent film 4, the reflective film 5, the absorbing film 9 and the gap is preferably less than or equal to the diameter of the optical fiber constituting the FOP2.

(Embodiment 6)
FIG. 6 is a schematic view showing another embodiment of the photodetecting device according to the present invention. About the same structure as Embodiment 5, the same code | symbol is attached | subjected and the description is abbreviate | omitted.
In the present embodiment, as in the second and fourth embodiments, the diffraction unit 10 and the imaging unit 20 are bonded via the bonding layer 8. The role and configuration of the bonding layer 8 are the same as those described in the second and fourth embodiments. The total thickness of the fluorescent film 4, the reflective film 5, the absorbing film 9, and the bonding layer 8 is preferably set to be equal to or smaller than the diameter of the optical fiber constituting the FOP2.

(Phosphor film)
Next, the configuration of the fluorescent film 4 formed on the substrate in the above-described photodetector will be described. Note that the light detection device 100 on which the fluorescent film 4 is formed is not limited to the above-described four embodiments.
The fluorescent film 4 is a film that emits fluorescence when irradiated with light, and is formed of a material including a base material and an activation material doped in the base material. The irradiated light may be light in which ultraviolet rays are included in visible light or the like. Moreover, the light which consists only of an ultraviolet-ray may be sufficient, and the light of the wavelength of a deep ultraviolet region or a vacuum ultraviolet region may be sufficient. For example, an ultraviolet laser beam such as a KrF excimer laser (wavelength 248 nm) or an ArF excimer laser (wavelength 193 nm) may be used.

  The base material of the fluorescent film 4 is made of a material that can transmit ultraviolet rays. This material can be appropriately selected depending on the ultraviolet rays to be irradiated. As this material, fluoride can be preferably used. Fluoride can transmit light in the visible range, and many fluoride materials are transparent even for light in the wavelength range where the oxide material becomes opaque. Is possible. In addition, fluoride has a low phonon energy and a low probability of non-radiative transition, so that the light energy absorbed by the phosphor can be prevented from being lost as heat, and the light resistance of the fluorescent thin film can be improved. it can.

Examples of such fluorides include neodymium fluoride (NdF ₃ ), lanthanum fluoride (LaF ₃ ), gadolinium fluoride (GdF ₃ ), dysprosium fluoride (DyF ₃ ), and lead fluoride (PbF ₂ ). ), Hafnium fluoride (HfF ₂ ), magnesium fluoride (MgF ₂ ), yttrium fluoride (YF ₃ ), aluminum fluoride (AlF ₃ ), sodium fluoride (NaF), lithium fluoride (LiF), fluoride One selected from the group consisting of calcium (CaF ₂ ), barium fluoride (BaF ₂ ), strontium fluoride (SrF ₂ ), cryolite (Na ₃ AlF ₆ ), and thiolite (Na ₅ Al ₃ F ₁₄ ); Or the mixture or compound of 2 or more types chosen from the group which consists of these is mentioned.

The mixture or compound of a fluoride, a solid solution mixed crystals of lanthanum fluoride and calcium fluoride _{(referred Ca x La 1-x F 3} -x, where 0 is a <x <1. Less CLF.), Hydrofluoric Examples thereof include a solid solution mixed crystal (Ca _x Y _1-x F _3-x ) of calcium fluoride and yttrium fluoride.

In particular, the fluoride is preferably one selected from the group consisting of lanthanum fluoride (LaF ₃ ), yttrium fluoride (YF ₃ ), CLF, and gadolinium fluoride (GdF ₃ ). If these fluorides are used, as will be apparent from Examples described later, it is easy to increase the fluorescence when irradiated with ultraviolet rays having a short wavelength.

  The activator of the fluorescent film 4 is a material that emits fluorescence when irradiated with light in a doped state in the base material. As this activation material, it can select suitably according to the ultraviolet-ray irradiated. Examples of the activator include transition elements and rare earth elements.

  Transition elements or rare earth elements include europium (Eu), terbium (Tb), praseodymium (Pr), samarium (Sm), dysprosium (Dy), cerium (Ce), holmium (Ho), erbium (Er), or ytterbium. (Yb). It is particularly preferred that the activator comprises one or more selected from the group consisting of europium (Eu), terbium (Tb), and praseodymium (Pr). In this case, it is easy to increase fluorescence when irradiated with ultraviolet rays having a short wavelength.

The concentration of the activation material in the base material is preferably 1% or more and 10% or less in terms of atomic% concentration with respect to the cation component of the base material. When the base material is made of lanthanum fluoride (LaF ₃ ) and the activator is made of terbium (Tb), the concentration of terbium (Tb) with respect to lanthanum (La) is 1% to 8% in terms of atomic% concentration. It is particularly preferred.

    The film thickness of the fluorescent film can be set according to the wavelength of the irradiated ultraviolet light, the use of the light detection device, and the like. The thicker the film, the more ultraviolet light can be made visible and the fluorescence becomes stronger. However, in order not to change the optical path, it is preferable to make it thinner. When it is difficult to obtain sufficient fluorescence due to being excessively thin, it is possible to increase fluorescence by selecting a material with strong fluorescence or laminating a plurality of fluorescent films. It is particularly preferable that the thickness of each layer is set to be equal to or shorter than the wavelength of ultraviolet rays to be irradiated or the design center wavelength. For example, in an optical system using short wavelength ultraviolet rays, the thickness of the fluorescent film may be 180 nm or less, or 125 nm or less. In particular, in an optical system using vacuum ultraviolet rays, the thickness of the fluorescent film may be 100 nm or less, or 80 nm or less. For example, a laser optical system using an ArF excimer laser (wavelength 193 nm) may be 100 nm or less. When sufficient fluorescence intensity can be obtained, the fluorescent film having the above thickness may be used as a single layer. Or it is good also as a fluorescent film which laminates | stacks the fluorescent film of the said layer thickness, for example, is 3 micrometers or less in total film thickness, or 1 micrometer or less.

  The material of the fluorescent film may be composed of the above-described base material and activation material. For example, you may be comprised only from said fluoride and an activation material. Furthermore, the fluoride constituting the base material may contain inevitable impurities. In addition to these base material and activator, the fluorescent film material may contain other components as long as fluorescence can be emitted by incident ultraviolet rays.

The phosphor film 4 can be manufactured using the method described in Patent Document 1.
For example, by preparing a target in which a base material is doped with an activator in advance, and forming a deposited film on the substrate using a vapor deposition method, preferably a vacuum deposition method using resistance heating, the activator is used as the base material. A doped fluorescent film can be formed. Alternatively, the phosphor film may be formed by separately preparing a base material and an activation material, and simultaneously vapor-depositing the base material and the activation material by a vapor deposition method, preferably a vacuum deposition method.

  The target can be produced as a fluoride ceramic using, for example, a hydrothermal synthesis method. In the hydrothermal synthesis method, fluoride fine particles are prepared by reacting a compound such as acetate as a cation component of fluoride with a fluorine compound such as hydrofluoric acid in an aqueous solution. After making this fluoride fine particle into a dry body or a press-molded body, it can be sintered at 800 to 1000 ° C. to obtain a fluoride ceramic.

  When preparing a fluoride consisting of a solid solution mixed crystal, the fine fluoride particles are synthesized separately for each cation component, a suspension of each fine fluoride particle is prepared, and both are wet mixed to form a fine particle mixture. The fine particle mixture is used to form a dry body or a press-molded body, and then sintered at 800 to 1000 ° C. to obtain fluoride ceramics.

  When preparing a target material in which an activator is previously doped into a base material, for example, a raw material powder is prepared by mixing an aqueous acetate solution of an activator with a suspension of fluoride fine particles or fluoride fine particle mixture. By sintering a dry powder body or a press-molded body into a fluoride ceramic, a material in which an activator is doped into a base material can be produced. In the hydrothermal synthesis process, the activator may be added in a form other than the acetate aqueous solution. Salts other than acetate include lactate, oxalate, ascorbate, alginate, benzoate, carbonate, citrate, gluconate, pantothenate, salicylate, stearate , Organic acid salts such as tartrate, glycerate and trifluoroacetate, and inorganic salts such as chloride, hydroxide, nitrate and sulfate.

  In the light detecting device 100, since the phosphor is formed on the substrate with the same thickness as the optical thin film as described above, unlike the conventional phosphor layer made of sintered powder, ultraviolet rays and fluorescence are fluorescent films. Therefore, it is possible to prevent blurring due to scattering or the like during transmission, and to accurately observe and measure ultraviolet rays. For example, the interference fringes of the ultraviolet diffracted light formed in the substrate can be visualized without changing the form and imaged by the imaging unit. In addition, unlike conventional fluorescent powders and fluorescent glasses, they are highly resistant to deterioration with time against light in the vacuum ultraviolet region, so that observation and measurement of light ultraviolet rays in the vacuum ultraviolet region can be performed.

<Optical characteristic measuring device>
In the embodiment of the present invention, the optical characteristic measurement device can include the photodetection device 100 described above.

Hereinafter, a shearing interferometer provided with a photodetecting device will be described as an example of an optical characteristic measuring device.
FIG. 7 is a schematic configuration diagram of a shearing interferometer provided with a photodetection device. The shearing interferometer shown in FIG. 7 is an apparatus for measuring the wavefront aberration (optical characteristics) of the optical system 25 to be measured such as a projection optical system mounted on an exposure apparatus, for example. Note that the optical characteristic measuring apparatus shown in FIG. 7 incorporates, for example, a photodetection apparatus 100 having the configuration illustrated in FIG. Therefore, in the description of the apparatus configuration in FIG. 7, the same reference numerals are given to the same configurations as those in the above-described embodiment, and a duplicate description is omitted.

  The shearing interferometer shown in FIG. 7 includes a member (substrate) 11 on which a pinhole pattern 11a composed of a plurality of pinholes is formed, and a light detection device 100. The member 11 is arranged so that the pinhole pattern 11a is placed on the object plane of the optical system 25 to be tested. The light detection device is arranged so that the diffraction grating 6 is placed on the image plane of the optical system 25 to be tested or in the vicinity thereof. The ultraviolet measurement light from the illumination optical system 21 is diffracted by passing through the pinhole pattern 11 a and enters the diffraction grating 6 of the light detection device 100 via the optical system 25 to be measured. The ultraviolet measurement light transmitted through the diffraction grating 6 forms interference fringes in the substrate, and the interference fringes are converted into measurement light in the visible region by the fluorescent film 4. Visible range measurement light (fluorescence) converted by the fluorescent film 4 passes through the wavelength selection film 5 and is guided to the imaging device 3 through the light guide member (FOP) 2. The imaging device 3 detects interference fringes generated by interference between diffracted lights generated by passing through the diffraction grating 6. Then, the wavefront aberration of the test optical system 25 is measured from the detected interference fringes.

  According to the shearing interferometer shown in FIG. 7, since the FOP is provided as the light guide member 2, it is not necessary to provide a huge relay optical system or the like, and the apparatus itself can be downsized. Therefore, even a small apparatus can measure interference fringes in a wide region in the image plane of the optical system 25 to be measured at a time with high accuracy. In addition, since the fluorescent film 4 having a thickness equal to or smaller than the diameter of the individual optical fibers constituting the FOP2 is formed on the incident surface of the FOP2, the measurement light in the ultraviolet region can be transmitted in the visible region while suppressing a decrease in the lateral resolution of the FOP2. The measurement light in the visible range can be reliably guided to the image sensor 3. Furthermore, since the measurement light in the ultraviolet region is converted into the measurement light in the visible region by the fluorescent film 4, the generation of coherent noise can be reduced. Therefore, there is no need to provide a rotating diffusion plate or the like for preventing the occurrence of coherent noise, and the device can be further downsized.

<Description of exposure apparatus configuration>
FIG. 8 is a schematic diagram showing an example of the configuration of an exposure apparatus incorporating an optical characteristic measurement device. In FIG. 8, an example of an exposure apparatus that performs exposure on the wafer W (photosensitive substrate) will be described.

  In the following description, the XYZ orthogonal coordinate system shown in FIG. 8 is set, and the positional relationship of each member is described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system is set such that the X axis and the Y axis are parallel to the wafer W and the Z axis is orthogonal to the wafer W. The X axis is a direction parallel to the paper surface of FIG. 8, and the Y axis is a direction perpendicular to the paper surface of FIG.

The exposure apparatus shown in FIG. 8 includes an illumination optical system 41, a mask stage 42, a projection optical system PL, and a wafer stage 43.
The illumination optical system 41 includes a light source for supplying exposure light, and the light emitted from the illumination optical system 41 illuminates the mask M with uniform illuminance. In the example of FIG. 8, an i-line lamp, a KrF excimer laser, an ArF excimer laser, an F ₂ laser, or the like is used as the light source. As the light source, a light source that generates DUV (deep ultraviolet) or VUV (vacuum ultraviolet) light can be used.

  The mask stage 42 is disposed on the object plane (or the vicinity thereof) of the projection optical system PL. On the mask stage 42, the mask M (or the substrate 11 for measuring optical characteristics on which the pinhole 11a is formed) is placed.

  The projection optical system PL projects the pattern formed on the mask M onto the wafer W. The projection optical system PL is composed of a plurality of optical members, and projects the pattern formed on the mask M onto the wafer W at a predetermined magnification (reduction magnification, equal magnification or enlargement magnification).

  The wafer stage 43 includes an XY stage that can move in the X axis and the Y axis, and a Z stage that can move in the Z axis direction and can be tilted with respect to the Z axis. The wafer stage 43 is provided with a wafer holder 45 that holds the wafer W by suction. Then, the wafer W is placed on the wafer stage 43 in the image plane of the projection optical system PL. Accordingly, the transfer pattern of the mask M can be sequentially exposed to each exposure region of the wafer W by driving the wafer stage 43 two-dimensionally in the XY plane.

  Further, the exposure apparatus shown in FIG. 8 includes a photodetection device having the same configuration as that of FIG. 1 on the wafer stage in order to measure the wavefront aberration of the projection optical system PL. When measuring the wavefront aberration of the projection optical system PL, first, the substrate 11 on which the pinhole pattern 11a is formed is placed on the mask stage. Further, the wafer stage 43 is moved in the X direction so that light through the projection optical system PL can irradiate the diffraction grating 6 formed on the incident surface of the photodetector 100.

  Then, the light from the illumination optical system 41 passes through the pinhole pattern 11a and enters the light detection device 100 through the test optical system (PL). In the light detection device 100, the ultraviolet light that has passed through the diffraction grating 6 is converted into fluorescence by the fluorescent film 4, and the above-described fluorescence passes through the wavelength selection film 5 and is guided to the image sensor 3 by the FOP 2. The image sensor 3 detects interference fringes formed by the measurement light passing through the pinhole pattern 11a and the diffraction grating 6. Then, the wavefront aberration of the projection optical system PL is measured from the detected interference fringes.

    The exposure apparatus shown in FIG. 8 is equipped with an optical characteristic measuring device (shearing interferometer) for measuring the wavefront aberration of the projection optical system PL, so that the wavefront aberration of the projection optical system PL can be measured with high accuracy. it can. Therefore, the pattern formed on the mask M can be exposed on the wafer W with high accuracy by the projection optical system PL in which the wavefront aberration is corrected based on the measurement result. The exposure apparatus shown in FIG. 8 may be an immersion type exposure apparatus in which a liquid having a refractive index of 1 or more is interposed between the projection optical system PL and the wafer W.

  In the case of the immersion exposure apparatus, when measuring the wavefront aberration of the projection optical system PL, the measurement may be performed with a liquid interposed between the projection optical system PL and the light detection apparatus 100. It is preferable to use pure water as the liquid used in the immersion exposure apparatus. Pure water has an advantage that it can be easily obtained in large quantities at a semiconductor manufacturing factory or the like, and has no adverse effect on the photoresist, optical element (lens), etc. on the substrate (wafer). In addition, pure water has no adverse effects on the environment, and since the impurity content is extremely low, it can be expected to clean the surface of the substrate and the surface of the optical element provided on the front end surface of the projection optical system. In addition to pure water, it is possible to use a liquid that is transparent to exposure light, has a refractive index as high as possible, and is stable with respect to the projection optical system and the photoresist applied to the substrate surface.

As an immersion type exposure apparatus, in addition to an exposure apparatus that locally fills a liquid between the projection optical system and the substrate (wafer), an immersion apparatus that moves a stage holding a substrate to be exposed in a liquid tank. The present invention can also be applied to an exposure apparatus or an immersion exposure apparatus in which a liquid tank having a predetermined depth is formed on a stage and a substrate is held therein. Regarding the structure and exposure operation of the immersion exposure apparatus that locally fills the liquid between the projection optical system and the substrate, for example, in WO 99/49504, the stage holding the substrate is moved in the liquid tank. For example, Japanese Patent Laid-Open No. 6-124873 discloses an immersion exposure apparatus to be formed. For an immersion exposure apparatus for forming a liquid tank having a predetermined depth on a stage and holding a substrate therein, for example, No. 303114 and US Pat. No. 5,825,043, respectively.
In the above-described embodiment, the case where the light detection device is applied to a wavefront aberration measuring device (shearing interferometer) has been described. For example, a pupil luminance distribution measuring device, an aerial image measurement sensor, a dose sensor, an illuminance unevenness sensor, and the like You may apply to.
The pupil luminance distribution measuring instrument is disclosed in, for example, US Pat. No. 5,925,887 and US Pat. No. 6,333,777. When applied to a pupil luminance distribution measuring instrument, the aperture pattern is a pinhole, and the optical path length from the aperture pattern to the fluorescent layer, that is, the thickness of the substrate is conjugated with the aperture stop in the optical system 25 to be tested. What is necessary is just to set so that it may become a position. In addition, when the photodetection device is applied to the aerial image measurement sensor, the aperture pattern may be a slit-shaped aperture. When the photodetection device is applied to the dose sensor, the aperture pattern is used as the exposure light irradiation region. A rectangular opening having almost the same size and shape may be used. Regarding the aerial image measurement sensor and the irradiation amount sensor, for example, WO 2005/010611 pamphlet, and for the aerial image measurement sensor and the illuminance unevenness sensor, for example, WO 2005/055296 pamphlet and US Patent Application Publication No. 2007/0242224. It is described in the specification.
These photodetectors may be mounted on the wafer table of an immersion type exposure apparatus, in which case, for example, as described in FIGS. 6a to 6c of the above-mentioned WO 2005/010611 pamphlet. It is preferable that the surface of the photodetecting device is arranged so as to be positioned on the same plane as the upper surface of the wafer table and the upper surface of the wafer. In this case, it is preferable that the photodetector is fixed to the wafer table via a heat insulating member so that the temperature of the wafer table and the wafer does not change due to heat generated by the photodetector.

<Explanation of exposure method and device manufacturing method>
In the exposure apparatus shown in FIG. 8, a micro pattern (semiconductor element, imaging element, liquid crystal display element) is formed by exposing a transfer pattern formed by a mask M using a projection optical system PL onto a photosensitive substrate (wafer). , Thin film magnetic heads, etc.). The photosensitive substrate may be a substrate coated with a photosensitive composition (photoresist) (for example, a semiconductor substrate, a glass substrate, a ceramic substrate, or a metal substrate).

  Hereinafter, an example of a technique for obtaining a semiconductor device as a micro device by forming a circuit pattern on a wafer or the like as a photosensitive substrate using the scanning exposure apparatus according to the above embodiment will be described with reference to FIG. This will be described with reference to a flowchart.

Step S201: A metal film is deposited on one lot of wafers.
Step S202: A photoresist is applied on the metal film of the one lot of plates (on the metal film on the wafer).

  Step S203: Using the exposure apparatus according to the above-described embodiment, the pattern formed on the mask is illuminated by the illumination optical system (illumination process), and an image of the illuminated pattern is formed on the wafer by the projection optical system ( Forming step), the pattern is sequentially exposed and transferred to each shot area on one lot of wafers. Note that the optical characteristics of the projection optical system are measured by the optical characteristic measuring apparatus in the above-described embodiment, and are corrected based on the measurement results.

Step S204: Development of the photoresist on the wafer in one lot is performed.
Step S205: Etching is performed on the wafer of one lot using the resist pattern as a mask, so that a circuit pattern corresponding to the pattern formed by the mask is formed in each shot area on each wafer.

  Thereafter, by forming a circuit pattern for the upper layer, a device such as a semiconductor element is manufactured. According to the semiconductor device manufacturing method described above, the optical characteristic measurement apparatus according to the above-described embodiment measures the optical characteristics of the projection optical system with high accuracy, and performs high-precision exposure with correction based on the measurement results. . Therefore, a good semiconductor device can be obtained.

  In S201 to S205 in FIG. 9, a metal is vapor-deposited on the wafer, a resist is applied on the metal film, and exposure, development, and etching processes are performed. Prior to these steps, a silicon oxide film may be formed on the wafer, a resist may be applied to the silicon oxide film, and the steps of exposure, development, and etching may be performed.

  Furthermore, in the exposure apparatus according to the above-described embodiment, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG.

  In FIG. 10, in the pattern formation process in step S <b> 301, a so-called photolithography process is performed in which a mask pattern is exposed and transferred to a plate using the exposure apparatus according to the above-described embodiment. As in the case of FIG. 9, the optical characteristics of the projection optical system are measured by the optical characteristic measuring apparatus in the above-described embodiment, and are corrected based on the measurement results.

  By this photolithography process, a pattern including a large number of electrodes and the like is formed on the plate. Thereafter, the exposed plate is subjected to steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the plate, and the process proceeds to the next color filter forming step (S302).

  In the color filter forming step in step S302, a color filter in which a large number of three dot groups corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or 3 corresponding to R, G, and B is used. A color filter is formed by arranging a plurality of striped filter sets in the direction of the horizontal scanning line. Then, after the color filter forming step, a cell assembly step (S303) is performed.

  In the cell assembly process in step S303, for example, liquid crystal is injected between the plate having the pattern obtained in the pattern formation process (S301) and the color filter obtained in the color filter formation process (S302). (Liquid crystal cell) is manufactured.

  Thereafter, in the module assembling process of step S304, each component such as an electronic circuit and a backlight for performing a display operation of the liquid crystal panel is attached to the liquid crystal panel (liquid crystal cell) assembled in S303. Thereby, a liquid crystal display element is completed.

  According to the above-described method for manufacturing a liquid crystal display element, the optical characteristic measurement apparatus according to the above-described embodiment measures the optical characteristics of the projection optical system with high accuracy, and performs high-precision exposure by correction based on this measurement result. Is called. Therefore, a good liquid crystal display element can be obtained.

  Hereinafter, a photodetection device manufactured as an embodiment of the present invention will be described. In the following examples, the ultraviolet rays to be used are ultraviolet rays having a wavelength of 300 nm or less, and are typically an ArF excimer laser (wavelength of about 193 nanometers) and a KrF excimer laser (wavelength of about 248 nanometers).

Example 1
A photodetection device having the configuration shown in FIG. 1 (Embodiment 1) was produced.
As the substrate 1, a synthetic quartz glass having a diameter of 30 mm and a thickness of 1 mm and optically polished at both end faces was used. As the light guide member 2, a fiber optic plate was used, in which optical fibers having a diameter of 6 micrometers manufactured by Schott were bundled, processed to a diameter of 30 mm and a thickness of 3 mm, and both end faces were optically polished. The phosphor film 4 was formed by phosphor heating by resistance heating vacuum deposition. The phosphor used as the deposition material was a sintered body synthesized with lanthanum fluoride (LaF ₃ ) as a base material and terbium (Tb) as an activator. For the synthesis of this phosphor, a raw material powder in which terbium ions were mixed with microcrystalline particles of lanthanum fluoride produced by a hydrothermal synthesis method was used. This raw material powder was press-molded into pellets and sintered at a high temperature at 800 ° C. in an electric furnace. In this sintering process, terbium ions are considered to diffuse into the lanthanum fluoride microcrystals and be activated uniformly. The concentration of the activator is 1 to 8%, and the concentration having the strongest fluorescence intensity is about 8%. The thickness of the fluorescent film 4 was 100 nm. When the fluorescent film 4 is irradiated with ultraviolet rays having a wavelength of 193 nm, the fluorescent film 4 emits green light having the strongest emission peak in the vicinity of 543 nm.

The dielectric multilayer film 5 is a reflection film for 193 nm light formed by alternately depositing LaF ₃ and MgF ₂ in multiple layers. This multilayer reflective film 5 has a high reflectivity of 99% or more in the wavelength region of 193 nm, and almost totally reflects ultraviolet rays. On the other hand, visible light having a wavelength of 543 nm emitted from the fluorescent film 4 is transmitted by 95% or more.
The bonding layer 8 was not particularly provided, and the diffraction unit 10 and the imaging unit 20 were mechanically contacted.

Example 2
A photodetection device having the configuration shown in FIG. 3 (Embodiment 1) was produced.
As the substrate 1, a synthetic quartz glass having a diameter of 30 mm and a thickness of 1 mm and optically polished at both end faces was used. As the light guide member 2, a fiber optic plate was used, in which optical fibers having a diameter of 6 micrometers manufactured by Schott were bundled, processed to a diameter of 30 mm and a thickness of 3 mm, and both end faces were optically polished.

The phosphor film 4 was formed by phosphor heating by resistance heating vacuum deposition. The phosphor used as the deposition material was a sintered body synthesized with lanthanum fluoride (LaF ₃ ) as a base material and terbium (Tb) as an activator. For the synthesis of this phosphor, a raw material powder in which terbium ions were mixed with microcrystalline particles of lanthanum fluoride produced by a hydrothermal synthesis method was used. This raw material powder was press-molded into pellets and sintered at a high temperature at 800 ° C. in an electric furnace. In this sintering process, terbium ions are considered to diffuse into the lanthanum fluoride microcrystals and be activated uniformly. The concentration of the activator is 1 to 8%, and the concentration having the strongest fluorescence intensity is about 8%. The thickness of the fluorescent film 4 was 100 nm. When the fluorescent film 4 is irradiated with ultraviolet rays having a wavelength of 193 nm, the fluorescent film 4 emits green light having the strongest emission peak in the vicinity of 543 nm.

The absorption film 9 was a vacuum-deposited titanium dioxide (TiO ₂ ). The film thickness was 150 nm or more. TiO ₂ transmits 90% or more of visible light of 543 nm and hardly transmits ultraviolet light of 300 nm or less over all incident angles (transmittance of 1% or less). Further, the TiO ₂ film hardly emitted fluorescence with respect to ultraviolet rays having a wavelength of 193 nm, and had a peak intensity of 1 / 10,000 or less in comparison with the fluorescence emission of the fluorescent film LaF ₃ : Tb8%. Further, it has been found that the ultraviolet resistance of the absorption film is good, and the deterioration assumed when used in the inspection of the projection lens system can sufficiently withstand the practical use.
The bonding layer 8 was not particularly provided, and the diffraction unit 10 and the imaging unit 20 were mechanically contacted.

Example 3
A photodetection device having the configuration shown in FIG. 5 (Embodiment 1) was produced.
As the substrate 1, a synthetic quartz glass having a diameter of 30 mm and a thickness of 1 mm and optically polished at both end faces was used. As the light guide member 2, a fiber optic plate was used, in which optical fibers having a diameter of 6 micrometers manufactured by Schott were bundled, processed to a diameter of 30 mm and a thickness of 3 mm, and both end faces were optically polished. The phosphor film 4 was formed by phosphor heating by resistance heating vacuum deposition. The phosphor used as the deposition material was a sintered body synthesized with lanthanum fluoride (LaF ₃ ) as a base material and terbium (Tb) as an activator. For the synthesis of this phosphor, a raw material powder in which terbium ions were mixed with microcrystalline particles of lanthanum fluoride produced by a hydrothermal synthesis method was used. This raw material powder was press-molded into pellets and sintered at a high temperature at 800 ° C. in an electric furnace. In this sintering process, terbium ions are considered to diffuse into the lanthanum fluoride microcrystals and be activated uniformly. The concentration of the activator is 1 to 8%, and the concentration having the strongest fluorescence intensity is about 8%. The thickness of the fluorescent film 4 was 100 nm. When the fluorescent film 4 is irradiated with ultraviolet rays having a wavelength of 193 nm, the fluorescent film 4 emits green light having the strongest emission peak in the vicinity of 543 nm.

The dielectric multilayer film 5 is a reflection mirror for 193 nm light formed by alternately depositing LaF ₃ and MgF ₂ in multiple layers. This multilayer film reflection mirror 5 has a high reflectance of 99% or more in the wavelength region of 193 nm, and substantially reflects ultraviolet rays. On the other hand, visible light having a wavelength of 543 nm emitted from the fluorescent film 4 is transmitted by 95% or more.

The absorption film 9 was a vacuum-deposited titanium dioxide (TiO ₂ ). The film thickness was 150 nm or more. TiO ₂ transmits 90% or more of visible light of 543 nm and hardly transmits ultraviolet light of 300 nm or less over all incident angles (transmittance of 1% or less). Further, the TiO ₂ film hardly emitted fluorescence with respect to ultraviolet rays having a wavelength of 193 nm, and had a peak intensity of 1 / 10,000 or less in comparison with the fluorescence emission of the fluorescent film LaF ₃ : Tb8%. Further, it has been found that the ultraviolet resistance of the absorption film is good, and the deterioration assumed when used in the inspection of the projection lens system can sufficiently withstand the practical use.

In addition, this invention is not limited to the said structure, A various change can be added. For example, the shearing interferometer has been described as an example of the optical characteristic measuring device, but the use of the light detection device according to the present invention is not limited to this. For example, the thickness of the substrate may be set to a predetermined value or less and used for collective measurement of distortion of the test optical system.
Moreover, although demonstrated using what was described in Embodiment 1 as a photon detection apparatus with which an optical characteristic measuring apparatus is provided, you may use what was described in Embodiment 2-4. Moreover, although what provided the protective film 7 was described as embodiment of the photon detection apparatus 100, it is good also as a thing which is not provided with the protective film 7. FIG.

In addition, the light detection device and the optical property measurement device of the present invention can also be applied to a twin stage type exposure apparatus. The structure and exposure operation of a twin stage type exposure apparatus are disclosed in, for example, Japanese Patent Laid-Open Nos. 10-163099 and 10-214783 (corresponding US Pat. Nos. 6,341,007, 6,400,441, 6,549,269). No. 6,590,634), JP 2000-505958 (corresponding US Pat. No. 5,969,441) or US Pat. No. 6,208,407.
In addition, as disclosed in JP-A-11-135400, the present invention includes an exposure stage that can move while holding a substrate to be processed such as a wafer, and a measurement stage that includes various measurement members and sensors. The present invention can also be applied to a provided exposure apparatus.

DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 2 ... FOP, 3 ... Image pick-up element, 4 ... Fluorescent film, 5 ... Dielectric multilayer film (reflection film), 6 ... Diffraction grating, 7 ... Protective film, 8 ... Joining layer, 9 ... Dielectric film ( Absorbing film), 10 ... Diffraction unit, 11 ... Member (pinhole substrate), 11a ... Pinhole, 20 ... Imaging unit, 21 ... Inspection light source, 25 ... Optical optical system, 41 ... Illumination optical system, 42 ... Mask stage , 43 ... Wafer stage, 45 ... Wafer holder, 100 ... Photodetector, M ... Mask, PL ... Projection optical system, W ... Wafer

Claims (16)

A fluorescent unit having a substrate, a predetermined opening pattern formed on one surface of the substrate, and a fluorescent film formed on a surface of the substrate facing the one surface;
A light detection device including an imaging unit having a light guide member configured by bundling a plurality of optical fibers and an image sensor arranged in contact with one surface of the light guide member,
The surface of the fluorescent unit on the fluorescent film side of the fluorescent unit is disposed so as to face the surface of the imaging unit on the light guide member side.     The light detection device according to claim 1, wherein the substrate transmits ultraviolet light, the phosphor film emits visible light when excited by the ultraviolet light, and the light guide member guides the visible light.   The photodetection device according to claim 1, further comprising a protective film formed on an outer surface side of the opening pattern of the fluorescent unit or between the opening pattern and the substrate.   4. The light detection according to claim 1, further comprising an absorption-type wavelength selection film that is formed on an outer surface side of the fluorescent film of the fluorescent unit and reflects ultraviolet light and transmits fluorescence. apparatus.   5. The light detection according to claim 1, further comprising a reflective wavelength selection film that is formed on an outer surface side of the fluorescent film of the fluorescent unit and absorbs ultraviolet rays and transmits fluorescence. apparatus.   The photodetecting device according to claim 1, wherein the fluorescent unit and the imaging unit are arranged via an intermediate layer having a thickness of 5 μm or less.   The photodetection device according to claim 6, wherein the intermediate layer is formed of a silicon dioxide film.   The phosphor film includes a base material made of a fluoride capable of transmitting ultraviolet light, and an activator doped in the base material, and the activator includes a transition element or a rare earth element. The photodetection device according to any one of 1 to 7.   9. The photodetecting device according to claim 1, wherein the fluorescent film emits fluorescence by ultraviolet rays including vacuum ultraviolet rays.   10. The light detection device according to claim 2, wherein the ultraviolet light is light having a wavelength of 193 nm oscillated from an ArF excimer laser or light having a wavelength of 248 nm oscillated from a KrF excimer laser.   The photodetection device according to claim 1, wherein the fluorescent unit is a diffraction unit in which the opening pattern is a diffraction grating. An optical property measuring device for measuring optical properties of a test optical system,
A member in which a pinhole is formed, and the light detection device according to claim 11,
The pinhole is disposed on the object plane of the optical system to be tested,
The diffraction grating is disposed on the image plane of the test optical system,
The image pickup unit detects an interference fringe formed by diffracting measurement light that has passed through the optical system to be detected by the diffraction grating. An exposure apparatus for forming a pattern disposed on a first surface on a photosensitive substrate disposed on a second surface,
An exposure apparatus comprising the light detection device according to claim 1. An exposure method for forming a pattern disposed on a first surface on a photosensitive substrate disposed on a second surface,
An illumination process for illuminating the pattern;
Forming an image of the pattern illuminated by the illumination step on the photosensitive substrate using an optical system measured by the optical property measuring apparatus according to claim 12;
An exposure method comprising: An exposure step of exposing an image of a pattern on a photosensitive substrate using the exposure method according to claim 14;
A developing step of developing the photosensitive substrate exposed by the exposing step;
A device manufacturing method comprising: An exposure step of exposing a pattern image on a photosensitive substrate using the exposure apparatus according to claim 13;
A developing step of developing the photosensitive substrate exposed by the exposing step;
A device manufacturing method comprising:

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